HT24LC02: CMOS 2K 2-Wire Serial EEPROM
HT24LC02: CMOS 2K 2-Wire Serial EEPROM
HT24LC02: CMOS 2K 2-Wire Serial EEPROM
Features
· Operating voltage: 2.2V~5.5V · Partial page write allowed
· Low power consumption · 8-byte Page write modes
- Operation: 5mA max. · Write operation with built-in timer
- Standby: 5mA max. · Hardware controlled write protection
· Internal organization: 256´8 · 40-year data retention
· 2-wire serial interface · 106 erase/write cycles per word
· Write cycle time: 5ms max. · Commerical temperature range (0°C to +70°C)
· Automatic erase-before-write operation · 8-pin DIP/SOP/TSSOP package
General Description
The HT24LC02 is a 2K-bit serial read/write non-volatile low power and low voltage operation are essential. Up
memory device using the CMOS floating gate process. to eight HT24LC02 devices may be connected to the
Its 2048 bits of memory are organized into 256 words same 2-wire bus. The HT24LC02 is guaranteed for 1M
and each word is 8 bits. The device is optimized for use erase/write cycles and 40-year data retention.
in many industrial and commercial applications where
A 0 1 8 V C C
S C L I/O H V P u m p A 1 2 7 W P
C o n tro l
S D A A 2 3 6 S C L
L o g ic
V S S 4 5 S D A
X
D E E P R O M H T 2 4 L C 0 2
M e m o ry E A rra y 8 D IP -A /S O P -A /T S S O P -A
W P C o n tro l C
L o g ic
P a g e B u f
Y D E C
A d d re s s
A 0 ~ A 2 S e n s e A M P
C o u n te r
R /W C o n tro l
V C C
V S S
Pin Description
Pin Name I/O Description
A0~A2 I Address inputs
SDA I/O Serial data inputs/output
SCL I Serial clock data input
WP I Write protect
VSS ¾ Negative power supply, ground
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VCC Conditions
VCC Operating Voltage ¾ ¾ 2.2 ¾ 5.5 V
ICC1 Operating Current 5V Read at 100kHz ¾ ¾ 2 mA
ICC2 Operating Current 5V Write at 100kHz ¾ ¾ 5 mA
VIL Input Low Voltage ¾ ¾ -1 ¾ 0.3VCC V
VIH Input High Voltage ¾ ¾ 0.7VCC ¾ VCC+0.5 V
VOL Output Low Voltage 2.4V IOL=2.1mA ¾ ¾ 0.4 V
ILI Input Leakage Current 5V VIN=0 or VCC ¾ ¾ 1 mA
ILO Output Leakage Current 5V VOUT=0 or VCC ¾ ¾ 1 mA
ISTB1 Standby Current 5V VIN=0 or VCC ¾ ¾ 5 mA
ISTB2 Standby Current 2.4V VIN=0 or VCC ¾ ¾ 4 mA
CIN Input Capacitance (See Note) ¾ f=1MHz 25°C ¾ ¾ 6 pF
COUT Output Capacitance (See Note) ¾ f=1MHz 25°C ¾ ¾ 8 pF
Note: These parameters are periodically sampled but not 100% tested
Note: These parameters are periodically sampled but not 100% tested
* The standard mode means VCC=2.2V to 5.5V
For relative timing, refer to timing diagrams
Functional Description
· Page write
S e n d W r ite C o m m a n d
The 2K EEPROM is capable of an 8-byte page write.
A page write is initiated the same as byte write, but the
S e n d S to p C o n d itio n
microcontroller does not send a stop condition after to In itia te W r ite C y c le
the first data word is clocked in. Instead, after the
EEPROM acknowledges the receipt of the first data
S e n d S ta rt
word, the microcontroller can transmit up to seven
more data words. The EEPROM will respond with a
z e ro a f t e r e a c h d a t a w or d r e c ei ve d . T h e S e n d C o tr o ll B y te
w ith R /W = 0
microcontroller must terminate the page write se-
quence with a stop condition.
The data word address lower three (2K) bits are inter-
(A C K = 0 )? N o
nally incremented following the receipt of each data
word. The higher data word address bits are not incre-
mented, retaining the memory page row location (re- Y e s
fer to Page write timing). N e x t O p e r a tio n
· Acknowledge polling
Acknowledge polling flow
Since the device will not acknowledge during a write
· Read operations
cycle, this can be used to determine when the cycle is
complete (this feature can be used to maximize bus Read operations are initiated the same way as write
throughput). Once the stop condition for a write com- operations with the exception that the read/write se-
mand has been issued from the master, the device ini- lect bit in the device address word is set to one. There
tiates the internally timed write cycle. ACK polling can are three read operations: current address read, ran-
be initiated immediately. This involves the master dom address read and sequential read.
sending a start condition followed by the control byte · Current address read
for a write command (R/W=0). If the device is still busy The internal data word address counter maintains the
with the write cycle, then no ACK will be returned. If last address accessed during the last read or write op-
the cycle is completed, then the device will return the eration, incremented by one. This address stays valid
ACK and the master can then proceed with the next between operations as long as the chip power is main-
read or write command. tained. The address roll over during read from the last
byte of the last memory page to the first byte of the first
· Write protect
page. The address roll over during write from the last
The HT24LC02 can be used as a serial ROM when byte of the current page to the first byte of the same
the WP pin is connected to VCC. Programming will be page. Once the device address with the read/write se-
in h ib i t ed and t he ent i r e m em or y w i l l b e lect bit set to one is clocked in and acknowledged by
write-protected. the EEPROM, the current address data word is seri-
B y te w r ite tim in g
D e v ic e a d d r e s s W o rd a d d re s s D A T A
S D A S A 2 A 1 A 0 P
S ta rt R /W A C K A C K
A C K
S to p
P a g e w r ite tim in g
D e v ic e a d d r e s s W o rd a d d re s s D A T A n D A T A n + 1 D A T A n + x
S D A S P
S ta rt A C K A C K A C K A C K
S to p
C u r r e n t r e a d tim in g
D e v ic e a d d r e s s D A T A
S to p
S D A S A 2 A 1 A 0 P
S ta rt A C K N o A C K
ally clocked out. The microcontroller does not respond · Sequential read
with an input zero but generates a following stop con- Sequential reads are initiated by either a current ad-
dition (refer to Current read timing). dress read or a random address read. After the
· Random read microcontroller receives a data word, it responds with an
A random read requires a dummy byte write sequence acknowledgment. As long as the EEPROM receives an
to load in the data word address which is then clocked acknowledgment, it will continue to increment the data
in and acknowledged by the EEPROM. The word address and serially clock out sequential data
microcontroller must then generate another start con- words. When the memory address limit is reached, the
dition. The microcontroller now initiates a current ad- data word address will roll over and the sequential read
dress read by sending a device address with the continues. The sequential read operation is terminated
read/write select bit high. The EEPROM acknowl- when the microcontroller does not respond with a zero
edges the device address and serially clocks out the but generates a following stop condition.
data word. The microcontroller does not respond with
a zero but does generates a following stop condition
(refer to Random read timing).
R a n d o m r e a d tim in g
D e v ic e a d d r e s s W o rd a d d re s s D e v ic e a d d r e s s D A T A
S to p
S D A S A 2 A 1 A 0 S P
A C K A C K A C K N o A C K
S ta rt S ta rt
S e q u e n tia l r e a d tim in g
D e v ic e a d d r e s s D A T A n D A T A n + 1 D A T A n + x
S D A S P
S ta rt A C K A C K A C K
S to p
Timing Diagrams
tf tr tH IG H
tL O W
S C L
tS U :S T A tH D :S T A tS U :D A T tS U :S T O
tH D :D A T
S D A tS P
tB U F
tA A
S D A
V a lid V a lid
O U T
S C L
S D A 8 th b it A C K
W o rd n tW R
S to p S ta rt
C o n d itio n C o n d itio n
Note: The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the valid start
condition of sequential command.
Package Information
8-pin DIP (300mil) outline dimensions
8 5
B
1 4
D
= I
E G
Dimensions in mil
Symbol
Min. Nom. Max.
A 355 ¾ 375
B 240 ¾ 260
C 125 ¾ 135
D 125 ¾ 145
E 16 ¾ 20
F 50 ¾ 70
G ¾ 100 ¾
H 295 ¾ 315
I 335 ¾ 375
a 0° ¾ 15°
8 5
A B
1 4
C '
G
D H
E F =
Dimensions in mil
Symbol
Min. Nom. Max.
A 228 ¾ 244
B 149 ¾ 157
C 14 ¾ 20
C¢ 189 ¾ 197
D 53 ¾ 69
E ¾ 50 ¾
F 4 ¾ 10
G 22 ¾ 28
H 4 ¾ 12
a 0° ¾ 10°
8 5
E 1
1 4
E
D
L
A A 2
C G
e B A 1 L 1
R 0 .1 0 y
(4 C O R N E R S )
Dimensions in mm
Symbol
Min. Nom. Max.
A 1.05 ¾ 1.20
A1 0.05 ¾ 0.15
A2 0.95 ¾ 1.05
B ¾ 0.25 ¾
C 0.11 ¾ 0.15
D 2.90 ¾ 3.10
E 6.20 ¾ 6.60
E1 4.30 ¾ 4.50
e ¾ 0.65 ¾
L 0.50 ¾ 0.70
L1 0.90 ¾ 1.10
y ¾ ¾ 0.10
q 0° ¾ 8°
D
T 2
A B C
T 1
SOP 8N
Symbol Description Dimensions in mm
A Reel Outer Diameter 330±1.0
B Reel Inner Diameter 62±1.5
13.0+0.5
C Spindle Hole Diameter
-0.2
D Key Slit Width 2.0±0.15
12.8+0.3
T1 Space Between Flange
-0.2
T2 Reel Thickness 18.2±0.2
TSSOP 8L
Symbol Description Dimensions in mm
A Reel Outer Diameter 330±1.0
B Reel Inner Diameter 62±1.5
13.0+0.5
C Spindle Hole Diameter
-0.2
D Key Slit Width 2.0±0.5
12.8+0.3
T1 Space Between Flange
-0.2
T2 Reel Thickness 18.2±0.2
P 0 P 1
D t
F
W
B 0
C
D 1 P
K 0
A 0
SOP 8N
Symbol Description Dimensions in mm
12.0+0.3
W Carrier Tape Width
-0.1
P Cavity Pitch 8.0±0.1
E Perforation Position 1.75±0.1
F Cavity to Perforation (Width Direction) 5.5±0.1
D Perforation Diameter 1.55±0.1
D1 Cavity Hole Diameter 1.5+0.25
P0 Perforation Pitch 4.0±0.1
P1 Cavity to Perforation (Length Direction) 2.0±0.1
A0 Cavity Length 6.4±0.1
B0 Cavity Width 5.20±0.1
K0 Cavity Depth 2.1±0.1
t Carrier Tape Thickness 0.3±0.05
C Cover Tape Width 9.3
TSSOP 8L
Symbol Description Dimensions in mm
12.0+0.3
W Carrier Tape Width
-0.1
P Cavity Pitch 8.0±0.1
E Perforation Position 1.75±0.1
F Cavity to Perforation (Width Direction) 5.5±0.5
D Perforation Diameter 1.5+0.1
D1 Cavity Hole Diameter 1.5+0.1
P0 Perforation Pitch 4.0±0.1
P1 Cavity to Perforation (Length Direction) 2.0±0.1
A0 Cavity Length 7.0±0.1
B0 Cavity Width 3.6±0.1
K0 Cavity Depth 1.6±0.1
t Carrier Tape Thickness 0.3±0.013
C Cover Tape Width 9.3