HT24LC02

2K 2-Wire CMOS Serial EEPROM

Features
· Operating voltage: 2.4V~5.5V · 8-byte Page write modes
· Low power consumption · Write operation with built-in timer
- Operation: 5mA max. · Hardware controlled write protection
- Standby: 5mA max. · 40-year data retention
6
· Internal organization · 10 erase/write cycles per word
- 2K (HT24LC02): 256´8 · 8-pin DIP/SOP package
· 2-wire serial interface · 8-pin TSSOP (HT24LC02 only)
· Write cycle time: 5ms max. · Commerical temperature range
· Automatic erase-before-write operation (0°C to +70°C)
· Partial page write allowed

General Description
The HT24LC02 is a 2K-bit serial read/write low power and low voltage operation are essen-
non-volatile memory device using the CMOS tial. Up to eight HT24LC02 devices may be con-
floating gate process. Its 2048 bits of memory nected to the same two-wire bus. The
are organized into 256 words and each word is 8 HT24LC02 is guaranteed for 1M erase/write cy-
bits. The device is optimized for use in many in- cles and 40-year data retention.
dustrial and commercial applications where

Block Diagram Pin Assignment

A 0 1 8 V C C
S C L I/O H V P u m p A 1 2 7 W P
C o n tro l
S D A A 2 3 6 S C L
L o g ic
V S S 4 5 S D A
X
D E E P R O M H T 2 4 L C 0 2
M e m o ry E A rra y 8 D IP /S O P /T S S O P
W P C o n tro l C
L o g ic
P a g e B u f
Y D E C

A d d re s s
A 0 ~ A 2 S e n s e A M P
C o u n te r
R /W C o n tro l
V C C
V S S

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 HT24LC02

Pin Description
Pin Name I/O Description
A0~A2 I Address inputs
SDA I/O Serial data inputs/output
SCL I Serial clock data input
WP I Write protect
VSS ¾ Negative power supply
VCC I Positive power supply

Absolute Maximum Ratings

Operating Temperature (Commercial) .................................................................................0°C to 70°C
Storage Temperature .......................................................................................................-50°C to 125°C
Applied VCC Voltage with Respect to VSS ......................................................................-0.3V to 6.0V
Applied Voltage on any Pin with Respect to VSS ....................................................-0.3V to VCC+0.3V

Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maxi-
mum Ratings² may cause substantial damage to the device. Functional operation of this device
at other conditions beyond those listed in the specification is not implied and prolonged expo-
sure to extreme conditions may affect device reliability.

D.C. Characteristics Ta=0°C to 70°C

Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VCC Conditions
VCC Operating Voltage ¾ ¾ 2.4 ¾ 5.5 V
ICC1 Operating Current 5V Read at 100kHz ¾ ¾ 2 mA
ICC2 Operating Current 5V Write at 100kHz ¾ ¾ 5 mA
VIL Input Low Voltage ¾ ¾ -1 ¾ 0.3VCC V
VIH Input High Voltage ¾ ¾ 0.7VCC ¾ VCC+0.5 V
VOL Output Low Voltage 2.4V IOL=2.1mA ¾ ¾ 0.4 V
ILI Input Leakage Current 5V VIN=0 or VCC ¾ ¾ 1 mA
ILO Output Leakage Current 5V VOUT=0 or VCC ¾ ¾ 1 mA
ISTB1 Standby Current 5V VIN=0 or VCC ¾ ¾ 5 mA
ISTB2 Standby Current 2.4V VIN=0 or VCC ¾ ¾ 4 mA
CIN Input Capacitance (See Note) ¾ f=1MHz 25°C ¾ ¾ 6 pF
COUT Output Capacitance (See Note) ¾ f=1MHz 25°C ¾ ¾ 8 pF

Note: These parameters are periodically sampled but not 100% tested

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 HT24LC02

A.C. Characteristics Ta=0°C to 70°C

Standard Mode* VCC=5V±10%

Symbol Parameter Remark Unit
Min. Max. Min. Max.
fSK Clock Frequency ¾ ¾ 100 ¾ 400 kHz
tHIGH Clock High Time ¾ 4000 ¾ 600 ¾ ns
tLOW Clock Low Time ¾ 4700 ¾ 1200 ¾ ns
tr SDA and SCL Rise Time Note ¾ 1000 ¾ 300 ns
tf SDA and SCL Fall Time Note ¾ 300 ¾ 300 ns
After this period
tHD:STA START Condition Hold
the first clock 4000 ¾ 600 ¾ ns
Time
pulse is generated
Only relevant for
tSU:STA START Condition
repeated START 4000 ¾ 600 ¾ ns
Setup Time
condition
tHD:DAT Data Input Hold Time ¾ 0 ¾ 0 ¾ ns
tSU:DAT Data Input Setup Time ¾ 200 ¾ 100 ¾ ns

tSU:STO STOP Condition Setup

¾ 4000 ¾ 600 ¾ ns
Time

tAA Output Valid from

¾ ¾ 3500 ¾ 900 ns
Clock
Time in which the
bus must be free
tBUF Bus Free Time before a new 4700 ¾ 1200 ¾ ns
transmission can
start
Input Filter Time
tSP Noise suppression
Constant (SDA and SCL ¾ 100 ¾ 50 ns
time
Pins)
tWR Write Cycle Time ¾ ¾ 5 ¾ 5 ms

Note: These parameters are periodically sampled but not 100% tested
* The standard mode means VCC=2.4V to 5.5V
For relative timing, refer to timing diagrams

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 HT24LC02

Functional Description
· Serial clock (SCL) line is high. Changes in data line while the
The SCL input is used for positive edge clock clock line is high will be interpreted as a
data into each EEPROM device and negative START or STOP condition.
edge clock data out of each device. · Start condition
· Serial data (SDA) A high-to-low transition of SDA with SCL
The SDA pin is bidirectional for serial data high is a start condition which must precede
transfer. The pin is open-drain driven and any other command (refer to Start and Stop
may be wired-OR with any number of other Definition Timing diagram).
open-drain or open collector devices. · Stop condition
· A0, A1, A2 A low-to-high transition of SDA with SCL
The A2, A1 and A0 pins are device address in- high is a stop condition. After a read se-
puts that are hard wired for the HT24LC02. quence, the stop command will place the
As many as eight 2K devices may be ad- EEPROM in a standby power mode (refer to
dressed on a single bus system (the device ad- Start and Stop Definition Timing Diagram).
dressing is discussed in detail under the · Acknowledge
Device Addressing section).
All addresses and data words are serially
· Write protect (WP) transmitted to and from the EEPROM in
The HT24LC02 has a write protect pin that 8-bit words. The EEPROM sends a zero to ac-
provides hardware data protection. The write knowledge that it has received each word.
protect pin allows normal read/write opera- This happens during the ninth clock cycle.
tions when connected to the VSS. When the
D a ta a llo w e d
write protect pin is connected to Vcc, the write to c h a n g e
protection feature is enabled and operates as S D A
shown in the following table.
WP Pin
Protect Array S C L
Status S ta rt A d d re s s o r S to p
c o n d itio n a c k n o w le d g e c o n d itio n
At VCC Full Array (2K) v a lid

At VSS Normal Read/Write Operations

Device addressing
Memory organization The 2K EEPROM devices all require an 8-bit
device address word following a start condition
· HT24LC02, 2K Serial EEPROM to enable the chip for a read or write operation.
Internally organized with 256 8-bit words, The device address word consist of a mandatory
the 2K requires an 8-bit data word address for one, zero sequence for the first four most signif-
random word addressing. icant bits (refer to the diagram showing the De-
vice Address). This is common to all the
Device operations EEPROM device.
· Clock and data transition The next three bits are the A2, A1 and A0 de-
Data transfer may be initiated only when the vice address bits for the 2K EEPROM. These
bus is not busy. During data transfer, the data three bits must compare to their corresponding
line must remain stable whenever the clock hard-wired input pins.

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 HT24LC02

The 8th bit of device address is the read/write A page write is initiated the same as byte
operation select bit. A read operation is initi- write, but the microcontroller does not send a
ated if this bit is high and a write operation is stop condition after the first data word is
initiated if this bit is low. clocked in. Instead, after the EEPROM ac-
If the comparison of the device address succeed knowledges the receipt of the first data word,
the EEPROM will output a zero at ACK bit. If not, the microcontroller can transmit up to seven
the chip will return to a standby state. more data words. The EEPROM will respond
with a zero after each data word received. The
1 0 1 0 A 2 A 1 A 0 R /W microcontroller must terminate the page
write sequence with a stop condition.
D e v ic e A d d r e s s
The data word address lower three (2K) bits
are internally incremented following the re-
Write operations ceipt of each data word. The higher data word
· Byte write address bits are not incremented, retaining
the memory page row location (refer to Page
A write operation requires an 8-bit data word
write timing).
address following the device address word
and acknowledgment. Upon receipt of this ad- · Acknowledge polling
dress, the EEPROM will again respond with a Since the device will not acknowledge during
zero and then clock in the first 8-bit data a write cycle, this can be used to determine
word. After receiving the 8-bit data word, the when the cycle is complete (this feature can be
EEPROM will output a zero and the address- used to maximize bus throughput). Once the
ing device, such as a microcontroller, must stop condition for a write command has been
terminate the write sequence with a stop con- issued from the master, the device initiates
dition. At this time the EEPROM enters an the internally timed write cycle. ACK polling
i n t e r na l l y - ti m ed w r i te c y c l e t o t h e can be initiated immediately. This involves
non-volatile memory. All inputs are disabled the master sending a start condition followed
during this write cycle and EEPROM will not by the control byte for a write command
respond until the write is completed (refer to (R/W=0). If the device is still busy with the
Byte write timing). write cycle, then no ACK will be returned. If
· Page write the cycle is completed, then the device will re-
turn the ACK and the master can then pro-
The 2K EEPROM is capable of an 8-byte page
ceed with the next read or write command.
write.

B y te w r ite tim in g

D e v ic e a d d r e s s W o rd a d d re s s D A T A

S D A S A 2 A 1 A 0 P
S ta rt R /W A C K A C K
A C K
S to p

P a g e w r ite tim in g

D e v ic e a d d r e s s W o rd a d d re s s D A T A n D A T A n + 1 D A T A n + x

S D A S P

S ta rt A C K A C K A C K A C K
S to p

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 HT24LC02

· Write protect
S e n d W r ite C o m m a n d
The HT24LC02 can be used as a serial ROM
when the WP pin is connected to VCC. Pro-
gramming will be inhibited and the entire S e n d S to p C o n d itio n
to In itia te W r ite C y c le
memory will be write-protected.
· Read operations
S e n d S ta rt
Read operations are initiated the same way
as write operations with the exception that
S e n d C o tr o ll B y te
the read/write select bit in the device address w ith R /W = 0
word is set to one. There are three read opera-
tions: current address read, random address
read and sequential read. N o
(A C K = 0 )?
· Current address read
The internal data word address counter Y e s
maintains the last address accessed during N e x t O p e r a tio n
the last read or write operation, incremented
by one. This address stays valid between op- Acknowledge polling flow
erations as long as the chip power is main-
tained. The address roll over during read
from the last byte of the last memory page to · Random read
the first byte of the first page. The address A random read requires a dummy byte write
roll over during write from the last byte of the sequence to load in the data word address
current page to the first byte of the same which is then clocked in and acknowledged by
page. Once the device address with the the EEPROM. The microcontroller must then
read/write select bit set to one is clocked in generate another start condition. The
and acknowledged by the EEPROM, the cur- microcontroller now initiates a current ad-
rent address data word is serially clocked out. dress read by sending a device address with
The microcontroller does not respond with an the read/write select bit high. The EEPROM
input zero but generates a following stop con- acknowledges the device address and serially
dition (refer to Current read timing). clocks out the data word. The microcontroller
does not respond with a zero but does gener-
ates a following stop condition (refer to Ran-
dom read timing).

C u r r e n t r e a d tim in g

D e v ic e a d d r e s s D A T A
S to p
S D A S A 2 A 1 A 0 P

S ta rt A C K N o A C K

R a n d o m r e a d tim in g

D e v ic e a d d r e s s W o rd a d d re s s D e v ic e a d d r e s s D A T A
S to p
S D A S A 2 A 1 A 0 S P
A C K A C K A C K N o A C K
S ta rt S ta rt

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 HT24LC02

· Sequential read
Sequential reads are initiated by either a cur- words. When the memory address limit is
rent address read or a random address read. Af- reached, the data word address will roll over
ter the microcontroller receives a data word, it and the sequential read continues. The sequen-
responds with an acknowledgment. As long as tial read operation is terminated when the
the EEPROM receives an acknowledgment, it microcontroller does not respond with a zero
will continue to increment the data word ad- but generates a following stop condition.
dress and serially clock out sequential data

S e q u e n tia l r e a d tim in g

D e v ic e a d d r e s s D A T A n D A T A n + 1 D A T A n + x

S D A S P
S ta rt A C K A C K A C K
S to p

Timing Diagrams
tf tr tH IG H

tL O W
S C L
tS U :S T A tH D :S T A tS U :D A T tS U :S T O
tH D :D A T

S D A tS P
tB U F
tA A
S D A
V a lid V a lid
O U T

S C L

S D A 8 th b it A C K
W o rd n tW R

S to p S ta rt
C o n d itio n C o n d itio n

Note: The write cycle time tWR is the time from a valid stop condition of a write sequence to the end
of the valid start condition of sequential command.

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 HT24LC02

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Copyright Ó 2000 by HOLTEK SEMICONDUCTOR INC.

The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek
assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are
used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications
will be suitable without further modification, nor recommends the use of its products for application that may pres-
ent a risk to human life due to malfunction or otherwise. Holtek reserves the right to alter its products without prior
notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw.

8 November 16, 2000