RIZAL TECHNOLOGICAL UNIVERSITY

COLLEGE OF ENGINEERING AND INDUSTRIAL TECHNOLOGY

E C E - 31
R E S E A R C H E S W O R K NO:

3
BIPOLAR

JUNCTION

TRANSISTOR
Name : Tevarms t, Armodia Course : BS ece Time& day : 9:00am 10:00am / TF ITC- 307 Engnr: Rick Nasuli

BIBLIOGRAPHY :
Robert l. boylestad and Louis nashelsky, ELECTRONIC DEVICES AND CIRCUIT THEORY 10TH EDITION , published by Pearson Education,inc pp 65 100.

Dale Patrick, Stephen Fardo, and Vigyan chandra Electronic Digital system fundamentals, 2008 ,published by The Fairmont Press, pp 31 46.

N.P Deshpande, Electronic devices and circuits Principles and Application, 2007 ,published by TaTa Mcgraw-hill Publishing Company Limites, pp 141 148. B. P. Singh Rekha Singh, Electronics devices and integrated circuits, first impression,2006, published by Dorling Kindersley ( India) pvt. Ltd, licenses of pearson in sounth Asia. pp 1 50. S. salivahanan, N.suresh kumar, A vallavaraj, Electronic devices and circuits, 1998, Tata McgrawHill Publishing Company Limited, This edition can be exported from india only by the publishers.

BIPOLAR JUNCTION TRANSISTOR

Introduction : Walter Brattain, John Bardeen, and William Shockley invented the bipolar junction transistor (BJT) in 1949, This revolutionary invention changed the world. The invention of the BJT followed the invention of the point contact transistor. The point contact transistor has several problems that prevented it from becoming a viable device. BJT is a three terminal device. BJT is used as amplifier and switch.

BIPOLAR JUNCTION TRANSISTOR :

Is a device constructed of doped semiconductor material and may be used in amplifying or switching applications. There are two basic types of transistor: Unipolar transistor and bipolar junction transistor. In unipolar transistor the current conduction is only due to one type of carriers, majority carriers. The current conduction is only due to one because of both the types of charges carriers, holes and electrons. Hence this is called Bipolar junction transistor, hereafter referred to as BJT.

TWO BASIC TYPES OF BJT :

N-P-N transistor : NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor (the "base") between two N-doped layers. A small current entering the base is amplified to produce a large collector and emitter current. That is, when there is a positive

potential difference measured from the emitter of an NPN transistor to its base as well as positive potential difference measured from the base to the collector, the transistor becomes active. In this "on" state, current flows between the collector and emitter of the transistor. Most of the current is carried by electrons moving from emitter to collector as minority carriers in the P-type base region. To allow for greater current and faster operation, most bipolar transistors used today are NPN because electron mobility is higher than hole mobility. the NPN transistor is the BJT transistor that is "not pointing in". P-N-P transistor : The other type of BJT is the PNP, consisting of a layer of Ndoped semiconductor between two layers of P-doped material. A small current leaving the base is amplified in the collector output. That is, a PNP transistor is "on" when its base is pulled low relative to the emitter. the PNP transistor is the BJT transistor that is "pointing in".

TYPES OF BJT :
Point-contact transistor first transistor ever constructed (December 1947), a bipolar transistor, limited commercial use due to high cost and noise. Tetrode point-contact transistor Point-contact transistor having two emitters. It became obsolete in the middle 1950s.

Junction transistors Grown-junction transistor first bipolar junction transistor made. Invented by William Shockley at Bell Labs. Invented on June 23, 1948. Patent filed on June 26, 1948. Alloy-junction transistor emitter and collector alloy beads fused to base. Developed at General Electric. Micro-alloy transistor (MAT) high speed type of alloy junction transistor. Micro-alloy diffused transistor (MADT) high speed type of alloy junction transistor, speedier than MAT, a diffused-base transistor. Post-alloy diffused transistor (PADT) high speed type of alloy junction transistor, speedier than MAT, a diffused-base transistor. Tetrode transistor high speed variant of grown-junction transistor or alloy junction transistor with two connections to base. Surface-barrier transistor high speed metal barrier junction transistor. Drift-field transistor high speed bipolar junction transistor. Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953.

Spacistor circa 1957. Diffusion transistor modern type bipolar junction transistor. Prototypes developed at Bell Labs in 1954. Diffused-base transistor first implementation of diffusion transistor. Mesa transistor Developed at Texas Instruments in 1957. Planar transistor the bipolar junction transistor that made mass produced monolithic integrated circuits possible. Developed by Dr. Jean Hoerni at Fairchild in 1959.

 Epitaxial transistor a bipolar junction transistor made using vapor phase deposition. See epitaxy. Allows very precise control of doping levels and gradients.

APPLICATION OF BIPOLAR JUNCTION TRANSISTOR

REGIONS OF OPERATION TO BJT
Bipolar transistors have five distinct regions of operation, defined by BJT junction biases. The modes of operation can be described in terms of the applied voltages (this description applies to NPN transistors; polarities are reversed for PNP transistors):

Forward active: base higher than emitter, collector higher than base (in this mode the collector current is proportional to base current by ). Saturation: base higher than emitter, but collector is not higher than base. Cut-Off: base lower than emitter, but collector is higher than base. It means the transistor is not letting conventional current to go through collector to emitter. Reverse-active: base lower than emitter, collector lower than base: reverse conventional current goes through transistor.

In terms of junction biasing: ('reverse biased basecollector junction' means Vbc < 0 for NPN, opposite for PNP)

Forward-active (or simply, active): The baseemitter junction is forward biased and the basecollector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, F, in forward-active mode. If this is the case, the collectoremitter current is approximately proportional to the base current, but many times larger, for small base current variations. Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Because most BJTs are designed to maximize current gain in forwardactive mode, the Fin inverted mode is several (23 for the ordinary germanium transistor) times smaller. This transistor mode is seldom used, usually being considered only for failsafe conditions and some types of bipolar logic. The reverse bias breakdown voltage to the base may be an order of magnitude lower in this region. Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates high current conduction from the emitter to the collector (or the other direction in the case of NPN, with negatively charged carriers flowing from emitter to collector). This mode corresponds to a logical "on", or a closed switch. Cutoff: In cutoff, biasing conditions opposite of saturation (both junctions reverse biased) are present. There is very little current, which corresponds to a logical "off", or an open switch.

Bipolar Junction Transistor Model A bipolar junction transistor (BJT) can be in three modes:
cutoff mode: Transistor acts like an open switch between collector and emitter. active mode: Transistor acts like a dynamic resistor between collector and emitter that adjusts its resistance in order to keep collector current at a set level. saturation mode: Transistor acts like a closed switch between collector and emitter.

COMMON-BASE CONFIGURATION :

The notation and symbols used in conjunction with the transistor in the majority of texts and manuals published today are indicated in the common base configuration with pnp and

npn transistor. The common base terminology is derived from the fact that the base is common to both the input and output sides of the configuration. In addition, the base is usually the terminal closest to the ground potential. The common base configuration is a conventional current flow from the direction of emitter current.

COMMON-EMITTER CONFIGURATION :

The most frequently encountered transistor configuration appears for the pnp and npn transistors. It is called the common emitter configuration because the emitter is common or reference to both the input and output terminals. Two sets of characteristics are again necessary to describe fully the behavior of the common-emitter configuration: one for the input or base-emitter circuit and one for the output or collector-emitter circuit.

COMMON-COLLECTOR CONFIGURATION :

The third and final transistor configuration is the common-collector configuration, it is used primarily for impedance-matching purposes since it has a high input impedance and low output impedance, opposite to that of the common-base and common emitter configurations.

TRANSISTOR 'ALPHA' AND 'BETA'

The proportion of electrons able to cross the base and reach the collector is a measure of the BJT efficiency. The heavy doping of the emitter region and light doping of the base region causes many more electrons to be injected from the emitter into the base than holes to be injected from the base into the emitter. The common-emitter current gain is represented by F or hFE; it is approximately the ratio of the DC collector current to the DC base current in forward-active region. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. Another important parameter is the common-base current gain, F. The common-base current gain is approximately the gain of current from emitter to collector in the forward-active region. This ratio usually has a value close to unity; between

0.98 and 0.998. Alpha and beta are more precisely related by the following identities (NPN transistor).

CURRENT VOLTAGE CHARACTERISTICS

The following assumptions are involved when deriving ideal current-voltage characteristics of the BJT

Low level injection Uniform doping in each region with abrupt junctions One-dimensional current Negligible recombination-generation in space charge regions Negligible electric fields outside of space charge regions.

TABLE OF CONTENTS :

Introduction Bipolar junction transistor Types of bipolar junction transistor Application of BJT
o Regions of operation to BJT o 3 types of configuration o Transistor alpha & beta

Two basic types of BJT

o NPN transistor o PNP transistor

Characteristic of BJT voltage & current