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    AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor

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    javierrincon800
    The document describes the AO4800B/L dual N-channel enhancement mode field effect transistor. It is designed for use as an efficient switch and synchronous rectifier in buck converters. Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and on-resistance as low as 27mΩ. Thermal characteristics include a maximum junction to ambient thermal resistance of 62.5°C/W. The device uses advanced trench technology to achieve good performance for switching applications.

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    AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor

    Uploaded by

    javierrincon800
    55 views4 pages
    The document describes the AO4800B/L dual N-channel enhancement mode field effect transistor. It is designed for use as an efficient switch and synchronous rectifier in buck converters. Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and on-resistance as low as 27mΩ. Thermal characteristics include a maximum junction to ambient thermal resistance of 62.5°C/W. The device uses advanced trench technology to achieve good performance for switching applications.

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    AO4800B

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    The document describes the AO4800B/L dual N-channel enhancement mode field effect transistor. It is designed for use as an efficient switch and synchronous rectifier in buck converters. Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and on-resistance as low as 27mΩ. Thermal characteristics include a maximum junction to ambient thermal resistance of 62.5°C/W. The device uses advanced trench technology to achieve good performance for switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    55 views4 pages

    AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor

    Uploaded by

    javierrincon800
    The document describes the AO4800B/L dual N-channel enhancement mode field effect transistor. It is designed for use as an efficient switch and synchronous rectifier in buck converters. Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and on-resistance as low as 27mΩ. Thermal characteristics include a maximum junction to ambient thermal resistance of 62.5°C/W. The device uses advanced trench technology to achieve good performance for switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor

    General Description
    The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications).

    Features
    VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27m (VGS = 10V) RDS(ON) < 32m (VGS = 4.5V) RDS(ON) < 50m (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested!

    S2 G2 S1 G1

    1 2 3 4

    8 7 6 5

    D2 D2 D1 D1 G1

    D1

    D2

    SOIC-8

    G2 S1 S2

    Absolute Maximum Ratings T A=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation B Avalanche Current
    B

    Maximum 30 12 6.9 5.8 40 1.9 1.2 12 22 -55 to 150

    Units V V A

    TA=25C TA=70C TA=25C TA=70C


    B

    ID IDM PD IAR EAR TJ, TSTG

    W A mJ C

    Repetitive avalanche energy 0.3mH

    Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientAF Maximum Junction-to-AmbientA Maximum Junction-to-LeadC

    Symbol t 10s Steady-State Steady-State RJA RJL

    Typ 55 90 40

    Max 62.5 110 48

    Units C/W C/W C/W

    Alpha & Omega Semiconductor, Ltd.

    www.aosmd.com

    AO4800B/L

    Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250 A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250 A VGS=4.5V, V DS=5V VGS=10V, I D=6.9A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, I D=6A VGS=2.5V, I D=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 10 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 40 20 25 23 34 26 0.71 1 4.5 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, V DS=15V, I D=8.5A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=1.8, RGEN=6 IF=5A, dI/dt=100A/ s IF=5A, dI/dt=100A/ s 3.5 21.5 2.7 16.8 8 20 12 1.5 12 1100 27 40 32 50 1 Min 30 0.002 1 5 100 1.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC

    STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

    DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

    SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

    A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1 : Dec 2007

    THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

    Alpha & Omega Semiconductor, Ltd.

    www.aosmd.com

    AO4800B/L

    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


    60 50 40 ID (A) 30 2.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 60 1.7 50 RDS(ON) (m ) 40 30 20 VGS=10V 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance VGS=2.5V 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5 VGS=10V VGS=2.5V VGS=2.5V VGS=10V VGS=4.5V VGS=2V 10V 4.5V 3V ID(A) 16 12 125C 8 25C 4 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V 20

    VGS=4.5V

    100 90 80 RDS(ON) (m ) 70 60 50 125C IS (A) ID=6.9A

    1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125C

    40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25C 1.0E-04 COMPONENTS IN25C LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 30 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics

    Alpha & Omega Semiconductor, Ltd.

    www.aosmd.com

    AO4800B/L

    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


    5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=15V ID=6.9A Capacitance (pF) 1200 1000 800 600 400 Crss Coss Ciss

    100.0 RDS(ON) limited ID (Amps) 10.0 10s 1.0 DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150C TA=25C

    50 40 Power (W) 30 20 10 0 100


    0.0001 0.001 0.01 0.1 1 10 100 1000

    TJ(Max)=150C TA=25C

    1ms 10ms 10s 1s

    Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

    10 Z JA Normalized Transient Thermal Resistance

    D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W

    In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

    PAPPLICATIONS THIS PRODUCT OR USES AS CRITICAL D 0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING TonIMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

    Alpha & Omega Semiconductor, Ltd.

    www.aosmd.com

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