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    P-Channel Enhancement Mode MOSFET: Features Pin Description

    Uploaded by

    Tatag Lindu Bhakti
    This document summarizes the specifications and characteristics of the AM2301 P-Channel MOSFET. Key details include: 1) It has a typical RDS(ON) of 85mΩ at -4.5V gate voltage and 110mΩ at -2.5V gate voltage. 2) Absolute maximum ratings include a drain-source voltage of -20V, continuous drain current of -2.5A, and junction temperature of 150°C. 3) Electrical characteristics include a gate threshold voltage between -0.45V to -1V and total gate charge between 5-7nC. 4) The device comes in a SOT-23 package and is available

    Copyright:

    © All Rights Reserved
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    P-Channel Enhancement Mode MOSFET: Features Pin Description

    Uploaded by

    Tatag Lindu Bhakti
    47 views10 pages
    This document summarizes the specifications and characteristics of the AM2301 P-Channel MOSFET. Key details include: 1) It has a typical RDS(ON) of 85mΩ at -4.5V gate voltage and 110mΩ at -2.5V gate voltage. 2) Absolute maximum ratings include a drain-source voltage of -20V, continuous drain current of -2.5A, and junction temperature of 150°C. 3) Electrical characteristics include a gate threshold voltage between -0.45V to -1V and total gate charge between 5-7nC. 4) The device comes in a SOT-23 package and is available

    Original Description:

    data sensor, data AM,

    Original Title

    AM2301-V1.0

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    © © All Rights Reserved

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    This document summarizes the specifications and characteristics of the AM2301 P-Channel MOSFET. Key details include: 1) It has a typical RDS(ON) of 85mΩ at -4.5V gate voltage and 110mΩ at -2.5V gate voltage. 2) Absolute maximum ratings include a drain-source voltage of -20V, continuous drain current of -2.5A, and junction temperature of 150°C. 3) Electrical characteristics include a gate threshold voltage between -0.45V to -1V and total gate charge between 5-7nC. 4) The device comes in a SOT-23 package and is available

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    47 views10 pages

    P-Channel Enhancement Mode MOSFET: Features Pin Description

    Uploaded by

    Tatag Lindu Bhakti
    This document summarizes the specifications and characteristics of the AM2301 P-Channel MOSFET. Key details include: 1) It has a typical RDS(ON) of 85mΩ at -4.5V gate voltage and 110mΩ at -2.5V gate voltage. 2) Absolute maximum ratings include a drain-source voltage of -20V, continuous drain current of -2.5A, and junction temperature of 150°C. 3) Electrical characteristics include a gate threshold voltage between -0.45V to -1V and total gate charge between 5-7nC. 4) The device comes in a SOT-23 package and is available

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 10

    Axelite Confidential Materials, do not copy or distribute without written consent

    Features Pin Description


    -20V/-2.5A,
    R
    DS(ON)
    =85m (typ.) @ V
    GS
    =-4.5V
    R
    DS(ON)
    =110m (typ.) @ V
    GS
    =-2.5V
    Super High Dense Cell Design
    Reliable and Rugged

    G
    D
    S
    Top View
    SOT-23

    D
    G
    S

    P Channel MOSFET
    Applications
    Power Management in Notebook Computer,
    Portable Equipment and Battery Powered
    Systems.
    Ordering and Marking Information


    Package
    R : SOT23-3L
    Packing
    Blank : Tube
    A M2301
    A1XXX AM2301 :
    XXX
    Date Code
    Packing
    Package

    AM2301
    A : Taping
    1
    P-Channel Enhancement Mode MOSFET
    Rev. 1.0 Sep.06, 2010

    2

    Absolute Maximum Ratings (T
    A
    =25C Unless Otherwise Noted)

    Symbol Parameter Rating Unit
    V
    DSS
    Drain-Source Voltage
    -20
    V
    V
    GSS
    Gate-Source Voltage
    12
    I
    D
    * Continue Drain Current -2.5
    A
    I
    DM
    * Pulsed Drain Current -10
    I
    S
    * Diode continuous forward current -1.5 A
    T
    J
    Maximum J unction Temperature 150
    C
    T
    STG
    Storage Temperature Range -55 to 150
    P
    D
    * Maximum Power Dissipation
    T
    A
    =25C 0.83
    W
    T
    A
    =100C 0.3
    R
    J A
    * Thermal Resistance-J unction to Ambient
    150 C/W
    Notes
    *Surface Mounted on 1in
    2
    pad area, t 10sec.

    Electrical Characteristics (T
    A
    =25C Unless Otherwise Noted)

    Symbol Parameter Test Condition
    AM2301
    Unit
    Min. Typ. Max.
    Static Characteristics
    BV
    DSS
    Drain-Source Breakdown Voltage V
    GS
    =0V, I
    DS
    =-250A -20 V
    I
    DSS
    Zero Gate Voltage Drain Current
    V
    DS
    =-16V, V
    GS
    =0V -1
    A
    T
    J
    =85C -30
    V
    GS(th)
    Gate Threshold Voltage V
    DS
    =V
    GS
    , I
    DS
    =-250A -0.45 -0.7 -1 V
    I
    GSS
    Gate Leakage Current V
    GS
    =12V, V
    DS
    =0V 100 nA
    R
    DS(ON)

    Drain-Source On-state Resistance
    V
    GS
    =-4.5V, I
    DS
    =-2.5A 85 130
    m
    V
    GS
    =-2.5V, I
    DS
    =-2A 110 190
    V
    SD
    Diode Forward Voltage I
    SD
    =-0.5A , V
    GS
    =0V -0.8 -1.3 V
    Gate Charge Characteristics
    b

    Q
    g
    Total Gate Charge
    V
    DS
    =-10V, V
    GS
    =-4.5V,
    I
    DS
    =-2.5A
    5 7
    nC Q
    gs
    Gate-Source Charge 0.7
    Q
    gd
    Gate-Drain Charge 0.6


    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010


    3

    Electrical Characteristics (Cont.) (T
    A
    =25C Unless Otherwise Noted)

    Symbol Parameter Test Condition
    AM2301
    Unit
    Min. Typ. Max.
    Dynamic Characteristics
    b

    R
    G
    Gate Resistance V
    GS
    =0V,V
    DS
    =0V,F=1MHz 9.2
    C
    iss
    Input Capacitance
    V
    GS
    =0V,
    V
    DS
    =-15V,
    Frequency=1.0MHz
    360
    pF C
    oss
    Output Capacitance 80
    C
    rss
    Reverse Transfer Capacitance 50
    t
    d(ON)
    Turn-on Delay Time
    V
    DD
    =-10V, R
    L
    =10
    I
    DS
    =-1A, V
    GEN
    =-4.5V,
    R
    G
    =6
    8 16
    ns
    T
    r
    Turn-on Rise Time 7 15
    t
    d(OFF)
    Turn-off Delay Time 18 35
    T
    f
    Turn-off Fall Time 8 15
    Notes
    a : Pulse test ; pulse width300s, duty cycle2%.
    b : Guaranteed by design, not subject to production testing.


    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010


    4

    Typical Characteristics



    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010


    5

    Typical Characteristics



    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010


    6

    Typical Characteristics



    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010


    7

    Package Information

    SOT-23


    Dim
    Millimeters Inches
    Min. Max. Min. Max.
    A 1.00 1.30 0.039 0.051
    A1 0.00 0.10 0.000 0.004
    B 0.35 0.51 0.014 0.020
    C 0.10 0.25 0.004 0.010
    D 2.70 3.10 0.106 0.122
    E 1.40 1.80 0.055 0.071
    e1 1.90 TYP 0.075 TYP.
    H 2.40 3.00 0.094 0.118
    L 0.37 0.015

    Physical Specifications

    Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn).
    Lead Solderability Meets EIA Specification RSI86-91, ANSI/J -STD-002 Category 3.
    D
    E H
    e S
    e1
    A
    A1
    L
    C
    B
    3
    2
    1


    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010

    8

    Reflow Condition
    (IR/Convection or VPR Reflow)

    t 25 C to Peak
    tp
    Ramp-up
    t
    L
    Ramp-down
    ts
    Preheat
    Tsmax
    Tsmin
    T
    L
    T
    P
    25
    T
    e
    m
    p
    e
    r
    a
    t
    u
    r
    e
    Time
    Critical Zone
    T
    L
    to T
    P




    Classification Reflow Profiles

    Profile Feature
    Sn-Pb Eutectic Assembly Pb-Free Assembly
    Large Body Small Body Large Body Small Body
    Average ramp-up rate
    (T
    L
    to T
    P
    )
    3C/second max. 3C/second max.
    Preheat
    - Temperature Min (Tsmin)
    - Temperature Max (Tsmax)
    - Time (min to max) (ts)
    100C
    150C
    60-120 seconds
    150C
    200C
    60-180 seconds
    Tsmax to T
    L

    - Ramp-up Rate
    3C/second max
    Time maintained above:
    - Temperature (TL)
    - Time (t
    L
    )
    183C
    60-150 seconds
    217C
    60-150 seconds
    Peak Temperature (Tp) 225 +0/-5C 240 +0/-5C 245 +0/-5C 250 +0/-5C
    Time within 5C of actual
    Peak Temperature (tp)
    10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds
    Ramp-down Rate 6C/second max. 6C/second max.
    Time 25C to Peak Temperature 6 minutes max. 8 minutes max.
    Notes: All temperatures refer to topside of the package .Measured on the body surface.



    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010

    9

    Package Reflow Conditions

    pkg. thickness 2.5mm
    and all bags
    pkg. thickness < 2.5mm and
    pkg. volume 350mm
    3

    pkg. thickness < 2.5mm and pkg. volume
    < 350mm
    3

    Convection 220 +5/-0C Convection 235 +5/-0C
    VPR 215-219C VPR 235 +5/-0C
    IR/Convection 220 +5/-0C IR/Convection 220 +5/-0C

    Reliability test program

    Test Item Method Description
    SOLDERABILITY MIL-STD-883D-2003 245C,5 SEC
    HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125C
    PCT J ESD-22-B, A102 168 Hrs, 100% RH, 121C
    TST MIL-STD 883D-1011.9 -65C ~150C, 200 Cycles

    Carrier Tape & Reel Dimensions
    t
    Ao
    E
    W
    Po
    P
    Ko
    Bo
    D1
    D
    F
    P1

    A
    J
    B
    T2
    T1
    C







    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010


    10

    Application A B C J T1 T2 W P E
    SOT- 23
    1781 60 1.0 12.0 2.5 0.15 9.0 0.5 1.4
    8.0+0.3
    - 0.3
    4.0 1.75
    F D D1 Po P1 Ao Bo Ko t
    3.5 0.05 1.5 +0.1 0.1MIN 4.0 2.0 0.05 3.1 3.0 1.3 0.20.03
    (mm)

    Cover Tape Dimensions

    Application Carrier Width Cover Tape Width Devices Per Reel
    SOT-23 8 5.3 3000



    AM2301
    Axelite Confidential Materials, do not copy or distribute without written consent



    Rev. 1.0 Sep.06, 2010

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