TC4426/TC4427/TC4428: 1.5A Dual High-Speed Power MOSFET Drivers

TC4426/TC4427/TC4428
1.5A Dual High-Speed Power MOSFET Drivers

Features:
General Description:
High Peak Output Current: 1.5A

Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
High Capacitive Load Drive Capability: 1000 pF in
25 ns (typical)
Short Delay Times: 40 ns (typical)
Matched Rise and Fall Times
Low Supply Current:
- With Logic 1 Input 4 mA
- With Logic 0 Input 400 A
Low Output Impedance: 7
Latch-Up Protected: Withstands 0.5A Reverse
Current
Input Withstands Negative Inputs Up to 5V
Electrostatic Discharge (ESD) Protected: 2.0 kV
Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN-S
Packages
The TC4426/TC4427/TC4428 are improved versions

of the earlier TC426/TC427/TC428 family of MOSFET
drivers. The TC4426/TC4427/TC4428 devices have
matched rise and fall times when charging and
discharging the gate of a MOSFET.
Applications:
These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
2.0 kV.
The TC4426/TC4427/TC4428 MOSFET drivers can
easily charge/discharge 1000 pF gate capacitances in
under 30 ns. These devices provide low enough
impedances in both the On and Off states to ensure the
MOSFETs intended state is not affected, even by large
transients.
Other compatible drivers are the TC4426A/TC4427A/
TC4428A family of devices. The TC4426A/TC4427A/
TC4428A devices have matched leading and falling
edge input-to-output delay times, in addition to the
matched rise and fall times of the TC4426/TC4427/
TC4428 devices.
Switch Mode Power Supplies

Line Drivers
Pulse Transformer Drive
Package Types
8-Pin MSOP/
PDIP/SOIC TC4426 TC4427 TC4428
NC
IN A
GND
IN B
8 NC
2 TC4426 7 OUT A
3 TC4427 6 VDD
4 TC4428 5 OUT B
NC
OUT A
VDD
OUT B
NC
OUT A
VDD
OUT B
8-Pin DFN-S* TC4426 TC4427 TC4428

NC 1
IN A 2
GND 3
IN B 4
EP
9
NC
NC
NC
OUT A
OUT A
OUT A
6
5
VDD
VDD
VDD
OUT B
OUT B
OUT B
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2006-2014 Microchip Technology Inc.
DS20001422G-page 1
TC4426/TC4427/TC4428
Functional Block Diagram
Inverting
VDD
1.5 mA
300 mV
Output
Non-Inverting
Input
Effective
Input C = 12 pF
(Each Input)
4.7V
TC4426/TC4427/TC4428
GND
Note 1: TC4426 has two inverting drivers, while the TC4427 has two non-inverting
drivers. The TC4428 has one inverting and one non-inverting driver.
2: Ground any unused driver input.
DS20001422G-page 2
TC4426/TC4427/TC4428
1.0
ELECTRICAL
CHARACTERISTICS
Stresses above those listed under Absolute Maximum

Ratings may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings

Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND 5V)
Package Power Dissipation (TA +70C)
DFN-S ..................................................................... Note 3
MSOP .....................................................................340 mW
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
Storage Temperature Range .........................-65C to +150C
Maximum Junction Temperature ................................. +150C
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25C with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Logic 1, High Input Voltage
VIH
2.4
Logic 0, Low Input Voltage
VIL
0.8
Input Current
IIN
-1.0
+1.0
Conditions
Input
Note 2
0VVINVDD
Output
High Output Voltage
VOH
VDD 0.025
DC Test
Low Output Voltage
VOL
0.025
DC Test
Output Resistance
RO
10
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
1.5
VDD = 18V
Latch-Up Protection
Withstand Reverse Current
IREV
> 0.5
Duty cycle2%, t 300 s

VDD = 18V
tR
19
30
ns
Figure 4-1
Fall Time
tF
19
30
ns
Figure 4-1
Delay Time
tD1
20
30
ns
Figure 4-1
Delay Time
tD2
40
50
ns
Figure 4-1
IS
4.5
0.4
mA
VIN = 3V (Both inputs)

Switching Time (Note 1)

Rise Time
Power Supply
Power Supply Current
Note 1:
2:
3:
Switching times ensured by design.

For V temperature range devices, the VIH (Min) limit is 2.0V.
Package power dissipation is dependent on the copper pad area on the PCB.
DS20001422G-page 3
TC4426/TC4427/TC4428
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic 1, High Input Voltage
VIH
2.4
Logic 0, Low Input Voltage
VIL
0.8
Input Current
IIN
-10
+10
High Output Voltage
VOH
VDD 0.025
DC Test
Low Output Voltage
VOL
0.025
DC Test
Note 2
0VVINVDD
Output
Output Resistance
RO
12
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
1.5
VDD = 18V
Latch-Up Protection
Withstand Reverse Current
IREV
>0.5
Duty cycle2%, t 300 s

VDD = 18V
Rise Time
tR
40
ns
Figure 4-1
Fall Time
tF
40
ns
Figure 4-1
Delay Time
tD1
40
ns
Figure 4-1
Delay Time
tD2
60
ns
Figure 4-1
IS
8.0
0.6
mA

Switching Time (Note 1)
Power Supply
Power Supply Current
Note 1:
2:
Switching times ensured by design.

For V temperature range devices, the VIH (Min) limit is 2.0V.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Specified Temperature Range (C)
TA
+70
Specified Temperature Range (E)
TA
-40
+85
Specified Temperature Range (V)
TA
-40
+125
Conditions
Temperature Ranges
Maximum Junction Temperature
TJ
+150
Storage Temperature Range
TA
-65
+150
Thermal Resistance, 8L-6x5 DFN-S
JA
33.2
C/W
Thermal Resistance, 8L-MSOP
JA
206
C/W
Thermal Resistance, 8L-PDIP
JA
125
C/W
Thermal Resistance, 8L-SOIC
JA
155
C/W
Package Thermal Resistances
DS20001422G-page 4
TC4426/TC4427/TC4428
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25C with 4.5V VDD 18V.

100
100
2200 pF
2200 pF
80
1500 pF
1500 pF
tFALL (nsec)
tRISE (nsec)
80
60
1000 pF
40
60
1000 pF
40
470 pF
470 pF
20
20
100 pF
100 pF
0
FIGURE 2-1:
Voltage.
10
14
12
VDD (V)
16
Rise Time vs. Supply
100
18
FIGURE 2-4:
Voltage.
tFALL (nsec)
10V
40
20
16
18
Fall Time vs. Supply
60
10V
15V
40
20
0
100
1000
0
100
10,000
1000
CLOAD (pF)
CLOAD (pF)
FIGURE 2-2:
Load.
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
60
Propagation Delay (nsec)
C LOAD = 1000 pF
Time (nsec)
14
5V
15V
VDD = 17.5V
40
30
tFALL
20
10
55 35 15
FIGURE 2-3:
Temperature.
12
VDD (V)
80
60
50
10
100
5V
80
tRISE (nsec)
tRISE
85
CLOAD = 1000 pF
VIN = 5V
tD2
tD1
105 125
Rise and Fall Times vs.
Fall Time vs. Capacitive
80
75
70
65
60
55
50
45
40
35
30
25
20
4
5
25 45 65
Temperature (C)
10,000
10
12
14
16
18
VDD (V)
FIGURE 2-6:
Supply Voltage.
Propagation Delay Time vs.
DS20001422G-page 5
TC4426/TC4427/TC4428
45
CLOAD = 1000 pF
55
VDD = 12V
50
45
tD2
40
35
30
tD1
25
CLOAD = 1000 pF
VIN = 5V
VDD = 18V
tD2
40
Delay Time (nsec)
Propagation Delay (nsec)
60
20
35
30
25
20
tD1
15
15
10
10
0
10
11
12
-55
-35
-15
Input Amplitude (V)
FIGURE 2-7:
Input Amplitude.
25
45
65
85
105 125
Temperature (C)
FIGURE 2-10:
Temperature.
4.0
3.5
Both Inputs = 1
IQUIESCENT (mA)
IQUIESCENT (mA)
V DD = 18V
3.0
Both Inputs = 1
2.5
Both Inputs = 0
0.1
4
FIGURE 2-8:
Voltage.
10
12
VDD
14
16
2.0
55 35 15
18
Supply Current vs. Supply
FIGURE 2-11:
Temperature.
65
85
105 125
Supply Current vs.
25
25
20
20
Worst Case @ TJ = +150C
RDS(ON) ()
Worst Case @ TJ = +150C
RDS(ON) ()
25 45
TA (C)
15
Typical @ TA = +25C
10
15
Typical @ TA = +25C
10
10
12
14
16
18
VDD
FIGURE 2-9:
Supply Voltage.
DS20001422G-page 6
Output Resistance (ROH) vs.
10
12
14
16
18
VDD
FIGURE 2-12:
Supply Voltage.
Output Resistance (ROL) vs.
TC4426/TC4427/TC4428
60
60
VDD = 18V
2 MHz
VDD = 18V
50
1000 pF
2200 pF
50
ISUPPLY (mA)
ISUPPLY (mA)
900 kHz
40
600 kHz
30
20
200 kHz
10
40
100 pF
30
20
10
20 kHz
0
100
1000
CLOAD (pF)
FIGURE 2-13:
Capacitive Load.
10,000
Supply Current vs.
10
FIGURE 2-16:
Frequency.
60
VDD = 12V
50
50
40
40
ISUPPLY (mA)
ISUPPLY (mA)
Supply Current vs.
60
2 MHz
VDD = 12V
30
900 kHz
20
600 kHz
10
1000
CLOAD (pF)
FIGURE 2-14:
Capacitive Load.
2200 pF
1000 pF
30
20
100 pF
10
200 kHz
20 kHz
0
100
0
10
10,000
Supply Current vs.
100
1000
FREQUENCY (kHz)
FIGURE 2-17:
Frequency.
60
Supply Current vs.
60
VDD = 6V
VDD = 6V
50
50
40
30
ISUPPLY (mA)
ISUPPLY (mA)
100
1000
FREQUENCY (kHz)
2 MHz
20
900 kHz
600 kHz
200 kHz
20 kHz
10
0
100
FIGURE 2-15:
Capacitive Load.
1000
CLOAD (pF)
2200 pF
30
1000 pF
20
10
10,000
Supply Current vs.
40
100 pF
0
10
FIGURE 2-18:
Frequency.
100
1000
FREQUENCY (kHz)
Supply Current vs.
DS20001422G-page 7
TC4426/TC4427/TC4428
8
10
9
8
7
6
A sec
5
4
3
10
Note:
10
12
VDD
14
16
18
The values on this graph represent the loss

seen by both drivers in a package during one
complete cycle. For a single driver, divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
FIGURE 2-19:
Supply Voltage.
DS20001422G-page 8
Crossover Energy vs.
TC4426/TC4427/TC4428
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE ( 1)
8-Pin PDIP/
MSOP/SOIC
8-Pin
DFN-S
NC
No connection
IN A
Input A
GND
Ground
IN B
Input B
OUT B
VDD
OUT A
NC
No connection
PAD
NC
Exposed Metal Pad
Note 1:
3.1
Symbol
Description
Output B
Supply input
Output A
Duplicate pins must be connected for proper operation.
Inputs A and B
MOSFET driver inputs A and B are high-impedance,

TTL/CMOS compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2
Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the Ground
pin. The VDD input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 F is suggested.
Ground (GND)
Ground is the device return pin. The Ground pin(s)

should have a low-impedance connection to the bias
supply source return. High peak current flows out the
Ground pin(s) when the capacitive load is being
discharged.
3.3
3.4
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN-S package is

not internally connected to any potential. Therefore,
this pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB), to aid
in heat removal from the package.
Output A and B
MOSFET driver outputs A and B are low-impedance,

CMOS push-pull style outputs. The pull-down and pullup devices are of equal strength, making the rise and
fall times equivalent.
DS20001422G-page 9
TC4426/TC4427/TC4428
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
VDD = 18V
0V
4.7 F
0.1 F
Input
tD1
VDD
tR
90%
90%
Output
10%
10%
0V
Inverting Driver
CL = 1000 pF
4
tD2
tF
Output
6
2
10%
+5V
90%
Input
3
Input: 100 kHz,
square wave,
tRISE = tFALL 10 ns
0V
VDD
10%
tD1 90%
tR
Output
0V
10%
90%
tD2
tF
10%
Non-Inverting Driver
FIGURE 4-1:
DS20001422G-page 10
Switching Time Test Circuit.
TC4426/TC4427/TC4428
5.0
PACKAGING INFORMATION
5.1
Package Marking Information

8-Lead DFN-S (6x5x0.9 mm)
Example
TC4426
EMF^^
1315
256
NNN
PIN 1
PIN 1
8-Lead MSOP (3x3 mm)
Example
4426C
315256
Example
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
TC4427
CPA^^NNN
YYWW
8-Lead SOIC (150 mil)
1315
Example
TC4428C
OA^^YYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
Note:
256
Customer specific information*

Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week 01)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard device marking consists of Microchip part number, year code, week code and traceability code.
DS20001422G-page 11
TC4426/TC4427/TC4428

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DS20001422G-page 12
TC4426/TC4427/TC4428
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DS20001422G-page 13
TC4426/TC4427/TC4428
8$
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For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001422G-page 14
TC4426/TC4427/TC4428
UA
Note:
DS20001422G-page 15
TC4426/TC4427/TC4428
8-Lead Plastic Micro Small Outline Package (UA) [MSOP]
Note:
DS20001422G-page 16
TC4426/TC4427/TC4428
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E1
NOTE 1
1
TOP VIEW
A2
3/$1(
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A1
e
eB
8X b1
8X b
.010
SIDE VIEW
END VIEW
Microchip Technology Drawing No. C04-018D Sheet 1 of 2
DS20001422G-page 17
TC4426/TC4427/TC4428
/HDG3ODVWLF'XDO,Q/LQH3$PLO%RG\>3',3@
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ALTERNATE LEAD DESIGN

(VENDOR DEPENDENT)
DATUM A
DATUM A
e
2
e
2
Units
Dimension Limits
Number of Pins
N
e
Pitch
Top to Seating Plane
A
Molded Package Thickness
A2
Base to Seating Plane
A1
Shoulder to Shoulder Width
E
Molded Package Width
E1
Overall Length
D
Tip to Seating Plane
L
c
Lead Thickness
Upper Lead Width
b1
b
Lower Lead Width
Overall Row Spacing
eB
MIN
.115
.015
.290
.240
.348
.115
.008
.040
.014
-
INCHES
NOM
8
.100 BSC
.130
.310
.250
.365
.130
.010
.060
.018
-
MAX
.210
.195
.325
.280
.400
.150
.015
.070
.022
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-018D Sheet 2 of 2
DS20001422G-page 18
TC4426/TC4427/TC4428
Note:
DS20001422G-page 19
TC4426/TC4427/TC4428
Note:
DS20001422G-page 20
TC4426/TC4427/TC4428

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DS20001422G-page 21
TC4426/TC4427/TC4428
NOTES:
DS20001422G-page 22
TC4426/TC4427/TC4428
APPENDIX A:
REVISION HISTORY
Revision G (July 2014)

The following is the list of modifications:
1.
Updated the Functional Block Diagram.
Revision F (September 2013)

The following is the list of modifications:
2.
3.
4.
Updated the Electrostatic Discharge (ESD)

rating to 2kV in the Features section.
Updated the package drawings in Section 5.0
Packaging Information.
Minor typographical and editorial corrections.
Revisions E (December 2012)

Added a note to each package outline drawing.
DS20001422G-page 23
TC4426/TC4427/TC4428
NOTES:
DS20001422G-page 24
TC4426/TC4427/TC4428
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
Temperature
Range
XX
XXX
Package
Tape & Reel
PB Free
Examples:
a)
TC4426COA:
1.5A Dual Inverting

MOSFET driver,
0C to +70C
SOIC package.
Device:
TC4426:
TC4427:
TC4428:
1.5A Dual MOSFET Driver, Inverting

1.5A Dual MOSFET Driver, Non-Inverting
1.5A Dual MOSFET Driver, Complementary
b)
TC4426EUA:
1.5A Dual Inverting

MOSFET driver,
-40C to +85C.
MSOP package.
Temperature Range:
C
E
V
0C to +70C (PDIP and SOIC only)

-40C to +85C
-40C to +125C
c)
TC4426EMF:
1.5A Dual Inverting

MOSFET driver,
-40C to +85C,
DFN-S package.
Package:
MF
= Dual, Flat, No-Lead (6X5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
(Tape and Reel)
OA
= Plastic SOIC, (150 mil Body), 8-lead
OA713 = Plastic SOIC, (150 mil Body), 8-lead
(Tape and Reel)
PA
= Plastic DIP (300 mil Body), 8-lead
UA
= Plastic Micro Small Outline (MSOP), 8-lead
UA713 = Plastic Micro Small Outline (MSOP), 8-lead
(Tape and Reel)
a)
TC4427CPA:
1.5A Dual Non-Inverting

MOSFET driver,
0C to +70C
PDIP package.
b)
TC4427EPA:
1.5A Dual Non-Inverting

MOSFET driver,
-40C to +85C
PDIP package.
a)
TC4428COA713:1.5A Dual Complementary
=
=
=
MOSFET driver,
0C to +70C,
SOIC package,
Tape and Reel.
b)
TC4428EMF:
1.5A Dual Complementary,

MOSFET driver,
-40C to +85C
DFN-S package.
DS20001422G-page 25
TC4426/TC4427/TC4428
NOTES:
DS20001422G-page 26
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchips Data
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03/25/14

TC4426/TC4427/TC4428: 1.5A Dual High-Speed Power MOSFET Drivers

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TC4426/TC4427/TC4428

1.5A Dual High-Speed Power MOSFET Drivers

High Peak Output Current: 1.5A

The TC4426/TC4427/TC4428 are improved versions

These devices are highly latch-up resistant under any

Switch Mode Power Supplies

8-Pin DFN-S* TC4426 TC4427 TC4428

* Includes Exposed Thermal Pad (EP); see Table 3-1.

2006-2014 Microchip Technology Inc.

2006-2014 Microchip Technology Inc.

Stresses above those listed under Absolute Maximum

Absolute Maximum Ratings

Logic 1, High Input Voltage

Logic 0, Low Input Voltage

Low Output Voltage

IOUT = 10 mA, VDD = 18V

Peak Output Current

Duty cycle2%, t 300 s

VIN = 3V (Both inputs)

Switching Time (Note 1)

Switching times ensured by design.

2006-2014 Microchip Technology Inc.

Logic 0, Low Input Voltage

High Output Voltage

Low Output Voltage

IOUT = 10 mA, VDD = 18V

Peak Output Current

Duty cycle2%, t 300 s

VIN = 3V (Both inputs)

Switching Time (Note 1)

Switching times ensured by design.

Specified Temperature Range (C)

Specified Temperature Range (E)

Specified Temperature Range (V)

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance, 8L-6x5 DFN-S

Thermal Resistance, 8L-MSOP

Thermal Resistance, 8L-PDIP

Thermal Resistance, 8L-SOIC

Package Thermal Resistances

2006-2014 Microchip Technology Inc.

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25C with 4.5V VDD 18V.

Rise Time vs. Supply

Fall Time vs. Supply

Rise Time vs. Capacitive

Propagation Delay (nsec)

2006-2014 Microchip Technology Inc.

Rise and Fall Times vs.

Fall Time vs. Capacitive

Propagation Delay Time vs.

Propagation Delay (nsec)

Input Amplitude (V)

Propagation Delay Time vs.

Propagation Delay Time vs.

Supply Current vs. Supply

Supply Current vs.

Worst Case @ TJ = +150C

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