21422D
21422D
DS21422D-page 1
TC4426/TC4427/TC4428
Features:
High Peak Output Current 1.5A
Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
High Capacitive Load Drive Capability 1000 pF
in 25 ns (typ.)
Short Delay Times 40 ns (typ.)
Matched Rise and Fall Times
Low Supply Current:
- With Logic 1 Input 4 mA
- With Logic 0 Input 400 A
Low Output Impedance 7
Latch-Up Protected: Will Withstand 0.5A Reverse
Current
Input Will Withstand Negative Inputs Up to 5V
ESD Protected 4 kV
Pin-compatible with the TC426/TC427/TC428
Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN
Packages
Applications:
Switch Mode Power Supplies
Line Drivers
Pulse Transformer Drive
General Description:
The TC4426/TC4427/TC4428 are improved versions
of the earlier TC426/TC427/TC428 family of MOSFET
drivers. The TC4426/TC4427/TC4428 devices have
matched rise and fall times when charging and
discharging the gate of a MOSFET.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise spik-
ing (of either polarity) occurs on the ground pin. They
can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
4 kV.
The TC4426/TC4427/TC4428 MOSFET drivers can
easily charge/discharge 1000 pF gate capacitances in
under 30 ns. These devices provide low enough
impedances in both the on and off states to ensure the
MOSFETs intended state will not be affected, even by
large transients.
Other compatible drivers are the TC4426A/TC4427A/
TC4428A family of devices. The TC4426A/TC4427A/
TC4428A devices have matched leading and falling
edge input-to-output delay times, in addition to the
matched rise and fall times of the TC4426/TC4427/
TC4428 devices.
Package Types
Note 1: Exposed pad of the DFN package is electrically isolated.
8-Pin DFN
(1)
NC
IN A
GND
IN B
2
3
4 5
6
7
8 1
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
TC4426
TC4427
TC4426 TC4427
NC
OUT A
OUT B
V
DD
TC4426
TC4427
TC4428
NC
OUT A
OUT B
V
DD
TC4428
TC4428
NC
OUT A
OUT B
V
DD
TC4426 TC4427
NC
OUT A
OUT B
V
DD
TC4428
NC
OUT A
OUT B
V
DD
8-Pin MSOP/
PDIP/SOIC
1.5A Dual High-Speed Power MOSFET Drivers
TC4426/TC4427/TC4428
DS21422D-page 2 2006 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 12 pF
(Each Input)
TC4426/TC4427/TC4428
Output
Input
GND
V
DD
300 mV
4.7V
Inverting
Non-Inverting
Note 1: TC4426 has two inverting drivers, while the TC4427 has two non-inverting
drivers. The TC4428 has one inverting and one non-inverting driver.
2: Ground any unused driver input.
1.5 mA
2006 Microchip Technology Inc. DS21422D-page 3
TC4426/TC4427/TC4428
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Supply Voltage ..................................................... +22V
Input Voltage, IN A or IN B
..................................... (V
DD
+ 0.3V) to (GND 5V)
Package Power Dissipation (T
A
70C)
DFN.............................................................. Note 3
MSOP.......................................................... 340 mW
PDIP............................................................ 730 mW
SOIC............................................................ 470 mW
Storage Temperature Range.............. -65C to +150C
Maximum Junction Temperature...................... +150C
Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
PIN FUNCTION TABLE
DC CHARACTERISTICS
Name Function
NC No Connection
IN A Input A
GND Ground
IN B Input B
OUT B Output B
V
DD
Supply Input
OUT A Output A
NC No Connection
Electrical Specifications: Unless otherwise noted, T
A
= +25C with 4.5V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic 1, High Input Voltage V
IH
2.4 V Note 2
Logic 0, Low Input Voltage V
IL
0.8 V
Input Current I
IN
-1.0 +1.0 A 0V V
IN
V
DD
Output
High Output Voltage V
OH
V
DD
0.025 V DC Test
Low Output Voltage V
OL
0.025 V DC Test
Output Resistance R
O
7 10 I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current I
PK
1.5 A V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
> 0.5 A Duty cycle 2%, t 300 s
V
DD
= 18V
Switching Time (Note 1)
Rise Time t
R
19 30 ns Figure 4-1
Fall Time t
F
19 30 ns Figure 4-1
Delay Time t
D1
20 30 ns Figure 4-1
Delay Time t
D2
40 50 ns Figure 4-1
Power Supply
Power Supply Current I
S
4.5
0.4
mA V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1: Switching times ensured by design.
2: For V temperature range devices, the V
IH
(Min) limit is 2.0V.
3: Package power dissipation is dependent on the copper pad area on the PCB.
TC4426/TC4427/TC4428
DS21422D-page 4 2006 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic 1, High Input Voltage V
IH
2.4 V Note 2
Logic 0, Low Input Voltage V
IL
0.8 V
Input Current I
IN
-10 +10 A 0V V
IN
V
DD
Output
High Output Voltage V
OH
V
DD
0.025 V DC Test
Low Output Voltage V
OL
0.025 V DC Test
Output Resistance R
O
9 12 I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current I
PK
1.5 A V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
>0.5 A Duty cycle 2%, t 300 s
V
DD
= 18V
Switching Time (Note 1)
Rise Time t
R
40 ns Figure 4-1
Fall Time t
F
40 ns Figure 4-1
Delay Time t
D1
40 ns Figure 4-1
Delay Time t
D2
60 ns Figure 4-1
Power Supply
Power Supply Current I
S
8.0
0.6
mA V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1: Switching times ensured by design.
2: For V temperature range devices, the V
IH
(Min) limit is 2.0V.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) T
A
0 +70 C
Specified Temperature Range (E) T
A
-40 +85 C
Specified Temperature Range (V) T
A
-40 +125 C
Maximum Junction Temperature T
J
+150 C
Storage Temperature Range T
A
-65 +150 C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
JA
33.2 C/W
Thermal Resistance, 8L-MSOP
JA
206 C/W
Thermal Resistance, 8L-PDIP
JA
125 C/W
Thermal Resistance, 8L-SOIC
JA
155 C/W
2006 Microchip Technology Inc. DS21422D-page 5
TC4426/TC4427/TC4428
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25C with 4.5V V
DD
18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise and Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay Time vs.
Supply Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
t
R
I
S
E
(
n
s
e
c
)
4 6 8 10 12 14 16 18
100 pF
470 pF
2200 pF
1500 pF
100
1000 pF
80
60
40
20
0
V
DD
(V)
100 1000 10,000
C (pF)
LOAD
5V
10V
15V
100
80
60
40
20
0
t
R
I
S
E
(
n
s
e
c
)
T
i
m
e
(
n
s
e
c
)
t
RISE
Temperature (C)
C = 1000 pF
LOAD
V = 17.5V
DD
60
55 35 5 25 45 65 85 105 125 15
t
FALL
50
40
30
20
10
t
F
A
L
L
(
n
s
e
c
)
4 6 8 10 12 14 16 18
100 pF
470 pF
1000 pF
2200 pF
1500 pF
100
80
60
40
20
0
V
DD
(V)
100 1000 10,000
5V
10V
C (pF)
LOAD
100
80
60
40
20
0
t
F
A
L
L
(
n
s
e
c
)
15V
20
25
30
35
40
45
50
55
60
65
70
75
80
4 6 8 10 12 14 16 18
V
DD
(V)
P
r
o
p
a
g
a
t
i
o
n
D
e
l
a
y
(
n
s
e
c
)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
TC4426/TC4427/TC4428
DS21422D-page 6 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25C with 4.5V V
DD
18V.
FIGURE 2-7: Propagation Delay Time vs.
Input Amplitude.
FIGURE 2-8: Supply Current vs. Supply
Voltage.
FIGURE 2-9: Output Resistance (R
OH
) vs.
Supply Voltage.
FIGURE 2-10: Propagation Delay Time vs.
Temperature.
FIGURE 2-11: Supply Current vs.
Temperature.
FIGURE 2-12: Output Resistance (R
OL
) vs.
Supply Voltage.
10
15
20
25
30
35
40
45
50
55
60
0 1 2 3 4 5 6 7 8 9 10 11 12
Input Amplitude (V)
P
r
o
p
a
g
a
t
i
o
n
D
e
l
a
y
(
n
s
e
c
)
t
D1
t
D2
C
LOAD
= 1000 pF
V
DD
= 12V
4
I
(
m
A
)
Q
U
I
E
S
C
E
N
T
18 6 8 10 12 14 16
0.1
Both Inputs = 1
Both Inputs = 0
V
DD
1
4 6 8 10 12 14 16 18
V
DD
R
D
S
(
O
N
)
(
)
20
25
15
10
5
Worst Case @ T
J
= +150C
Typical @ T
A
= +25C
10
15
20
25
30
35
40
45
-55 -35 -15 5 25 45 65 85 105 125
Temperature (C)
D
e
l
a
y
T
i
m
e
(
n
s
e
c
)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
V
DD
= 18V
T
A
(C)
I
Q
U
I
E
S
C
E
N
T
(
m
A
)
4.0
3.5
3.0
2.5
2.0
55 35 15 5 25 45 65 85 105 125
V = 18V
DD
Both Inputs = 1
4 6 8 10 12 14 16 18
20
V
DD
25
15
10
5
Worst Case @ T
J
= +150C
Typical @ T
A
= +25C
R
D
S
(
O
N
)
(
)
2006 Microchip Technology Inc. DS21422D-page 7
TC4426/TC4427/TC4428
Note: Unless otherwise indicated, T
A
= +25C with 4.5V V
DD
18V.
FIGURE 2-13: Supply Current vs.
Capacitive Load.
FIGURE 2-14: Supply Current vs.
Capacitive Load.
FIGURE 2-15: Supply Current vs.
Capacitive Load.
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-18: Supply Current vs.
Frequency.
60
100 1000 10,000
I
S
U
P
P
L
Y
(
m
A
)
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
C (pF)
LOAD
V = 18V
DD
50
40
30
20
10
0
100 1000 10,000
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
V = 12V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
I
S
U
P
P
L
Y
(
m
A
)
100 1000 10,000
2 MHz
200 kHz
20 kHz
600 kHz
900 kHz
V = 6V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
I
S
U
P
P
L
Y
(
m
A
)
10 100 1000
FREQUENCY (kHz)
1000 pF
2200 pF
V = 18V
DD
100 pF
60
50
40
30
20
10
0
I
S
U
P
P
L
Y
(
m
A
)
10 100 1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 12V
DD
60
50
40
30
20
10
0
I
S
U
P
P
L
Y
(
m
A
)
10 100 1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 6V
DD
60
50
40
30
20
10
0
I
S
U
P
P
L
Y
(
m
A
)
TC4426/TC4427/TC4428
DS21422D-page 8 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25C with 4.5V V
DD
18V.
FIGURE 2-19: Crossover Energy vs.
Supply Voltage.
4
A
s
e
c
18 6 8 10 12 14 16
8
7
6
5
4
3
2
10
9
10
8
9
V
DD
Note: The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single driver, divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
2006 Microchip Technology Inc. DS21422D-page 9
TC4426/TC4427/TC4428
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
(1)
3.1 Inputs A and B
MOSFET driver inputs A and B are high-impedance,
TTL/CMOS compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2 Ground (GND)
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
3.3 Output A and B
MOSFET driver outputs A and B are low-impedance,
CMOS push-pull style outputs. The pull-down and pull-
up devices are of equal strength, making the rise and
fall times equivalent.
3.4 Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The V
DD
input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 F is suggested.
3.5 Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board, to aid in heat
removal from the package.
8-Pin PDIP/
MSOP/SOIC
8-Pin
DFN
Symbol Description
1 1 NC No connection
2 2 IN A Input A
3 3 GND Ground
4 4 IN B Input B
5 5 OUT B Output B
6 6 V
DD
Supply input
7 7 OUT A Output A
8 8 NC No connection
PAD NC Exposed Metal Pad
Note 1: Duplicate pins must be connected for proper operation.
TC4426/TC4427/TC4428
DS21422D-page 10 2006 Microchip Technology Inc.
4.0 APPLICATIONS INFORMATION
FIGURE 4-1: Switching Time Test Circuit.
C
L
= 1000 pF
0.1 F 4.7 F
Inverting Driver
Non-Inverting Driver
Input
V
DD
= 18V
Input
Output
t
D1
t
F
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 ns
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
V
DD
0V
90%
10%
10%
10%
90%
+5V
V
DD
0V
0V
0V
90%
3
2 7
6
4
5
2006 Microchip Technology Inc. DS21422D-page 11
TC4426/TC4427/TC4428
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
TC4427
CPA256
0420
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
TC4428
COA0420
256
8-Lead MSOP Example:
XXXXX
YWWNNN
4426C
420256
Legend: XX...X Customer specific information*
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week 01)
NNN Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
* Standard device marking consists of Microchip part number, year code, week code, and traceability
code.
8-Lead DFN Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4426
EMF
0420
256
TC4426/TC4427/TC4428
DS21422D-page 12 2006 Microchip Technology Inc.
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) Saw Singulated
2006 Microchip Technology Inc. DS21422D-page 13
TC4426/TC4427/TC4428
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
D
A
A1
L
c
A2
E1
E
p
B
n 1
2
F
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side.
.037 REF F Footprint (Reference)
Notes:
Revised 07-21-05
* Controlling Parameter
Mold Draft Angle Top
Mold Draft Angle Bottom
Foot Angle
Lead Width
Lead Thickness
c
B
.003
.009
.006
.012
Dimension Limits
Overall Height
Molded Package Thickness
Molded Package Width
Overall Length
Foot Length
Standoff
Overall Width
Number of Pins
Pitch
A
L
E1
D
A1
E
A2
.016 .024
.118 BSC
.118 BSC
.000
.030
.193 BSC
.033
MIN
p
n
Units
.026 BSC
NOM
8
INCHES
0.95 REF
-
-
.009
.016
0.08
0.22
0
0.23
0.40
8
MILLIMETERS*
0.65 BSC
0.85
3.00 BSC
3.00 BSC
0.60
4.90 BSC
.043
.031
.037
.006
0.40
0.00
0.75
MIN MAX NOM
1.10
0.80
0.15
0.95
MAX
8
- -
-
15 5 -
15 5 -
JEDEC Equivalent: MO-187
0 - 8
5
5 -
-
15
15
- -
- -
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
See ASME Y14.5M
See ASME Y14.5M
Drawing No. C04-111
TC4426/TC4427/TC4428
DS21422D-page 14 2006 Microchip Technology Inc.
8-Lead Plastic Dual In-line (P) 300 mil (PDIP)
B1
B
A1
A
L
A2
p
E
eB
c
E1
n
D
1
2
Units INCHES* MILLIMETERS
Dimension Limits MIN NOM MAX MIN NOM MAX
Number of Pins n 8 8
Pitch
p
.100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Length D .360 .373 .385 9.14 9.46 9.78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thickness c .008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing eB .310 .370 .430 7.87 9.40 10.92
Mold Draft Angle Top 5 10 15 5 10 15
Mold Draft Angle Bottom 5 10 15 5 10 15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010 (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
Significant Characteristic
2006 Microchip Technology Inc. DS21422D-page 15
TC4426/TC4427/TC4428
8-Lead Plastic Small Outline (SN) Narrow, 150 mil (SOIC)
Foot Angle 0 4 8 0 4 8
15 12 0 15 12 0 Mold Draft Angle Bottom
15 12 0 15 12 0 Mold Draft Angle Top
0.51 0.42 0.33 .020 .017 .013 B Lead Width
0.25 0.23 0.20 .010 .009 .008 c Lead Thickness
0.76 0.62 0.48 .030 .025 .019 L Foot Length
0.51 0.38 0.25 .020 .015 .010 h Chamfer Distance
5.00 4.90 4.80 .197 .193 .189 D Overall Length
3.99 3.91 3.71 .157 .154 .146 E1 Molded Package Width
6.20 6.02 5.79 .244 .237 .228 E Overall Width
0.25 0.18 0.10 .010 .007 .004 A1 Standoff
1.55 1.42 1.32 .061 .056 .052 A2 Molded Package Thickness
1.75 1.55 1.35 .069 .061 .053 A Overall Height
1.27 .050
p
Pitch
8 8 n Number of Pins
MAX NOM MIN MAX NOM MIN Dimension Limits
MILLIMETERS INCHES* Units
2
1
D
n
p
B
E
E1
h
L
c
45
A2
A
A1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010 (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
Significant Characteristic
TC4426/TC4427/TC4428
DS21422D-page 16 2006 Microchip Technology Inc.
NOTES:
2006 Microchip Technology Inc. DS21422D-page 17
TC4426/TC4427/TC4428
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Device: TC4426: 1.5A Dual MOSFET Driver, Inverting
TC4427: 1.5A Dual MOSFET Driver, Non-Inverting
TC4428: 1.5A Dual MOSFET Driver, Complementary
Temperature Range: C = 0C to +70C (PDIP and SOIC only)
E = -40C to +85C
V = -40C to +125C
Package: MF = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
(Tape and Reel)
OA = Plastic SOIC, (150 mil Body), 8-lead
OA713 = Plastic SOIC, (150 mil Body), 8-lead
(Tape and Reel)
PA = Plastic DIP (300 mil Body), 8-lead
UA = Plastic Micro Small Outline (MSOP), 8-lead
UA713 = Plastic Micro Small Outline (MSOP), 8-lead
(Tape and Reel)
Examples:
a) TC4426COA: 1.5A Dual Inverting
MOSFET driver,
0C to +70C
SOIC package.
b) TC4426EUA: 1.5A Dual Inverting
MOSFET driver,
-40C to +85C.
MSOP package.
c) TC4426EMF: 1.5A Dual Inverting
MOSFET driver,
-40C to +85C,
DFN package.
a) TC4427CPA: 1.5A Dual Non-Inverting
MOSFET driver,
0C to +70C
PDIP package.
b) TC4427EPA: 1.5A Dual Non-Inverting
MOSFET driver,
-40C to +85C
PDIP package.
a) TC4428COA713:1.5A Dual Complementary
MOSFET driver,
0C to +70C,
SOIC package,
Tape and Reel.
b) TC4428EMF: 1.5A Dual Complementary,
MOSFET driver,
-40C to +85C
DFN package.
PART NO. X XX
Package Temperature
Range
Device
XXX
Tape & Reel
X
PB Free
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC4426/TC4427/TC4428
DS21422D-page 18 2006 Microchip Technology Inc.
NOTES:
2006 Microchip Technology Inc. DS21422D-page 19
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-
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RELATED TO THE INFORMATION, INCLUDING BUT NOT
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Trademarks
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PRO MATE, PowerSmart, rfPIC, and SmartShunt are
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2006, Microchip Technology Incorporated, Printed in the
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Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchips Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchips code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
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Microchip received ISO/TS-16949:2002 quality system certification for
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Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Companys quality system processes and
procedures are for its PICmicro
8-bit MCUs, KEELOQ
code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
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and manufacture of development systems is ISO 9001:2000 certified.
DS21422D-page 20 2006 Microchip Technology Inc.
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10/31/05