Sheet 1

Alexandria University
Faculty of Engineering
Electrical Engineering Department
EE431: Digital Integrated Circuits

Sheet 1: MOS Inverter Static Characteristics
1) Design a resistive-load inverter with R = 1 k, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following
parameters:
VDD=5V, VT0 = 1V, = 0.2V1/2 , = 0 , nCox = 22A/V2
a. Determine the required aspect ratio
b. Determine VIL and VIH
c. Determine noise margins NML and NMH.
2) Draw the layout of the resistive-load inverter designed in Problem 1
using a polysilicon resistor with sheet resistivity of 25 /square and the
minimum feature size of 2 m. It should be noted that L stands for the
effective channel length which is related to the mask channel length as L
= LM + - 2 LD. where we assume 8 (process error) = 0 and LD = 0.25
m. To save chip area, use minimum sizes for Wand L. Also, the circuit
area can be reduced by using the folded layout (snake pattern) of the
resistor.
3) Draw cross-sections of the following device along the lines A - A and B
B.
4) Consider the following nMOS inverter circuit which consists of two

enhancement-type nMOS transistors, with the parameters:
a. Calculate VOH and VOL values. Note that the substrate-bias effect of
the load device must be taken into consideration.
b. Interpret the results in terms of noise margins and static (DC) power
dissipation.
c. Calculate the steady-state current which is drawn from the DC power
supply when the input is a logic "1", i.e., when Vin = VOH
5) Design of a depletion-load nMOS inverter:
VDD=5V, VT0 = 0.8V (E-type), VT0 = -2.8V (D-type)
= 0.38V1/2 , nCox = 30A/V2, |2F| = 0.6V
a. Determine the (WIL) ratios of both transistors such that:
i. the static (DC) power dissipation for Vin = VOH is 250 W, and
ii. VOL = 0.3V
b. Calculate VIL and VIH values, and determine the noise margins.
c. Plot the VTC of the inverter circuit.
6) Consider CMOS inverter with the following parameters:
NMOS
VT0,n = 0.6 V
n Cox= 60 A/V2
(W/L)n = 8
2
PMOS
VT0,p = 0.7 V
p Cox= 25 A/V
(W/L)p = 12
Calculate the noise margins and the switching threshold (Vth) of this
circuit. The power supply is VDD = 3.3 V.
7) Design of a CMOS inverter circuit:
Use the same device parameters as in problem 6.
The power supply VDD = 3.3 V. The channel length of both transistors is
Ln = Lp = 0.8 m.
a) Determine the (Wn /Wp) ratio so that the switching (inversion)
threshold voltage of the circuit is Vth = 1.4 V.
b) The CMOS fabrication process used to manufacture this inverter
allows a variation of the VT0,n value by 15% around its normal value,
and a variation of the VT0,p value by 20% around its normal value.
Assuming that all other parameters (such as n, p, Cox, Wn ,Wp)
always retain their nominal values, find the upper and lower limits of
the switching threshold voltage (Vth) of this circuit.
8) Consider the CMOS inverter designed in problem 7, with the following
circuit configuration
a) Calculate the output voltage level Vout.

b) Determine if the process-related variation of VT0,n of M3 has any
influence upon the voltage Vout.
c) Calculate the total current being drawn from the power supply source,
and determine its variation due to process-related threshold voltage
variations.
9) Consider a CMOS inverter, with the following device parameters:
NMOS
VT0,n = 0.6 V
n Cox = 60 A/V2
PMOS
VT0,p = - 0.8 V
p Cox = 20 A/V2
Also consider:
VDD = 3
=0
a) Determine the (W/L) ratios of the NMOS and the PMOS transistor
such that the switching threshold is Vth = 1.5 V.
b) Plot the VTC of the CMOS inverter using SPICE.
c) Determine the VTC of the inverter for = 0.05 and = 0.1 V-1.
d) Discuss how the noise margins are influenced by non-zero value.

Note that transistors with very short channel lengths tend to have
larger values than long-channel transistors.
10) Consider the CMOS inverter designed in problem 9 above, with =
0.1 V-1. Now consider a cascade connection of four identical inverters, as
shown.
a) If the input voltage is Vin = 1.55 V, find Vout1, Vout2, Vout3 and Vout4.
(note that this requires solving KCL equations for each subsequent
stage, using the non-zero value).
b) How many stages are necessary to restore a true logic output level?
c) Verify your result with SPICE simulation.

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Alexandria University

EE431: Digital Integrated Circuits

4) Consider the following nMOS inverter circuit which consists of two

a) Calculate the output voltage level Vout.

d) Discuss how the noise margins are influenced by non-zero value.

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