BLF861A

UHF power LDMOS transistor

Rev. 3 1 September 2015 Product data sheet

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Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

FEATURES PINNING - SOT540A

High power gain PIN DESCRIPTION
Easy power control 1 drain 1
Excellent ruggedness 2 drain 2
Designed to withstand abrupt load mismatch errors 3 gate 1
Source on underside eliminates DC isolators; reducing 4 gate 2
common mode inductance 5 source connected to flange
Designed for broadband operation (UHF band)
Internal input and output matching for high gain and
optimum broadband operation.
1 2
APPLICATIONS
Communication transmitter applications in the UHF
frequency range. 5

3 4

DESCRIPTION Top view MBK777

Silicon N-channel enhancement mode lateral D-MOS

push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting Fig.1 Simplified outline.
flange.

QUICK REFERENCE DATA

RF performance at Th = 25 C in a common source 860 MHz test circuit.

f VDS PL Gp D Gp
MODE OF OPERATION
(MHz) (V) (W) (dB) (%) (dB)
CW, class-AB 860 32 150 >13.5 >50 1
typ. 14.5
PAL BG (TV); class-AB 860 (ch 69) 32 >150 >14 >40 note 1
typ. 170
(peak sync)

Note
1. Sync compression: input sync 33%; output sync 27%.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage 15 V
ID drain current (DC) 18 A
Ptot total power dissipation Tmb 25 C 318 W
Tstg storage temperature 65 +150 C
Tj junction temperature 200 C

2001 Feb 09 2
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction to mounting base Tmb = 25 C; Ptot = 318 W 0.55 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W

CHARACTERISTICS
Tj = 25 C; per section; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.5 mA 65 V
VGSth gate-source threshold voltage VDS = 10 V; ID = 150 mA 4 5.5 V
IDSS drain-source leakage current VGS = 0; VDS = 32 V 2.2 A
IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 18 A
IGSS gate leakage current VGS = 15 V; VDS = 0 25 nA
gfs forward transconductance VDS = 10 V; ID = 4 A 4 S
RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 4 A 160 m
Ciss input capacitance VGS = 0; VDS = 32 V; f = 1 MHz (1) 82 pF
Coss output capacitance VGS = 0; VDS = 32 V; f = 1 MHz (1) 40 pF
Crss feedback capacitance VGS = 0; VDS = 32 V; f = 1 MHz (1) 6 pF

Note
1. Capacitance values without internal matching.

MLD510
100
handbook, halfpage
Coss
(pF)
80

60

40

20

0
0 10 20 30 40 50
VDS (V)

VGS = 0; f = 1 MHz; Tj = 25 C.

Fig.2 Output capacitance as a function of

drain-source voltage; typical values per
section.

2001 Feb 09 3
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. Th = 25 C; Rth mb-h = 0.15 K/W; unless otherwise specified.

MODE OF f VDS IDQ PL Gp D dIm Gp

OPERATION (MHz) (V) (A) (W) (dB) (%) (dBc) (dB)
CW; class-AB 860 32 1 150 >13.5 >50 1
typ. 14.5
2-tone; class-AB f1 = 860 32 1 150 (PEP) >14 >40 25
f1 = 860.1
PAL BG (TV); class-AB 860 32 1 > 150 >14 >40 note 1
(ch 69) typ. 170
(peak sync)

Note
1. Sync compression: input sync 33%; output sync 27% measured in an 860 MHz test circuit.

Ruggedness in class-AB operation

The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 32 V; f = 860 MHz at rated load power.
The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load
mismatch errors under the nominal power condition.

MCD871 MCD872
12 10
handbook, halfpage handbook, halfpage

zi ZL
() () RL
xi

8 5

4 0
ri
XL

0 5
400 500 600 700 800 900 400 500 600 700 800 900
f (MHz) f (MHz)

CW, class-AB operation; VDS = 32 V; IDQ = 1 A; CW, class-AB operation; VDS = 32 V; IDQ = 1 A;
PL = 170 W (total device); Th = 25 C. PL = 170 W (total device); Th = 25 C.

Fig.3 Input impedance as a function of frequency Fig.4 Load impedance as a function of frequency
(series components); typical push-pull (series components); typical push-pull
values. values.

2001 Feb 09 4
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

MLD514 MLD515
20 80 0
handbook, halfpage handbook, halfpage
Gp D dim
(dB) (%) (dBc)
Gp d3
15 60 20

D d5
10 40 40

5 20 60

0 0 80
0 100 200 300 0 100 200 300
PL (PEP) (W) PL (PEP) (W)

Th = 25 C; VDS = 32 V; IDQ = 1 A.
2-tone: f1 = 860 MHz (6 dB); f2 = 860.1 MHz (6 dB)
Th = 25 C; VDS = 32 V; IDQ = 1 A.
measured in an 860 MHz test circuit.
2-tone: f1 = 860 MHz (6 dB); f2 = 860.1 MHz (6 dB)
measured in an 860 MHz test circuit.
Fig.5 Power gain and drain efficiency as functions
of peak envelope load power; typical Fig.6 Intermodulation distortion as a function of
values. peak envelope output power; typical values.

MLD516
20 80
handbook, halfpage
Gp D
(dB) Gp (%)

15 60

D
10 40

5 20

0 0
0 50 100 150 200 250
PL (W)

Th = 25 C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 860 MHz;

measured in an 860 MHz test circuit.

Fig.7 Power gain and drain efficiency as functions

of load power; typical values.

2001 Feb 09 5
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2001 Feb 09

Philips Semiconductors
handbook, full pagewidth

UHF power LDMOS transistor

R2
+Vbias
+VS

C19
C26
C18
L18
R3 L9
R4 L7 L11 C24
L1
L5 L13 C20 C21
L3 L15
6

C16 R5
C9 C25
C10 C14 L17 C15
C1 B1 C2 C4 C5
R1 L B2 50
50 C3 C6 C7 19 C11 C12 C13 output
C8
input
L4 L16
L6 L14 C22 C23
R6 L2
C17 MCD876
L8 L12
L10

Product specification
BLF861A
Fig.8 Class-AB common source broadband test circuit.
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

List of components class-AB broadband test circuit (see Figs 8 and 9)

CATALOGUE
COMPONENT DESCRIPTION VALUE DIMENSIONS
No.
C1 multilayer ceramic chip capacitor; note 1 20 pF
C2 multilayer ceramic chip capacitor; note 1 4.3 pF
C3, C6, C9 tekelec trimmer 0.6 to 4.5 pF
C4 multilayer ceramic chip capacitor; note 1 9.1 pF
C5 multilayer ceramic chip capacitor; note 1 10 pF
C7 multilayer ceramic chip capacitor; note 1 5.1 pF
C8 multilayer ceramic chip capacitor; note 1 13 pF
C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF
C12, C13 multilayer ceramic chip capacitor; note 2 6.8 pF
C14 multilayer ceramic chip capacitor; note 3 1 pF
C15 multilayer ceramic chip capacitor; note 3 20 pF
C16, C17 multilayer ceramic chip capacitor 1 nF
C18 multilayer ceramic chip capacitor 100 nF
C19, C26 multilayer ceramic chip capacitor 100 F
C20, C21, multilayer ceramic chip capacitor; note 2 100 pF
C22, C23
C24 electrolytic capacitor 1000 F
C25 multilayer ceramic chip capacitor 1 F 2222 595 16754
L1, L2 stripline; note 4 30.6 2.4 mm
L3, L4 stripline; note 4 28 2.4 mm
L5, L6 stripline; note 4 10 5 mm
L7, L8 stripline; note 4 20 10 mm
L9, L10 stripline; note 4 5.5 15 mm
L11, L12 stripline; note 4 10 10 mm
L13, L14 stripline; note 4 15 5 mm
L15, L16 stripline; note 4 48.5 2.4 mm
L17 stripline; note 4 10 2.4 mm
L18 ferrite
L19 wire inductor (hairpin) length = 17 mm
B1 semi rigid coax balun UT70-25 Z = 25 1.5 70 mm
B2 semi rigid coax balun UT70-25 Z = 25 1.5 48.5 mm

2001 Feb 09 7
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

CATALOGUE
COMPONENT DESCRIPTION VALUE DIMENSIONS
No.
R1 resistor 33
R2 resistor 1 k
R3 resistor 100 k
R4 resistor 100
R5, R6 SMD resistor 3.9
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. American Technical Ceramics type 100B or capacitor of same quality.
4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (r = 2.2); thickness 0.79 mm.

2001 Feb 09 8
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

handbook, full pagewidth 95 95

80

+Vbias +VS

C26

C18 C19 R3
R2
2.5 L18
R4 8
10 15 B2
B1
R5 C20
C8 C10
BLF861

C16 C2 C5 C11 C14

C1 C4 C21
R1 C22
C17 C3 C6 C7 C12 C13 C15
C9 L19 C25 C23
R6

C24
2.5

MCD877

Dimensions in mm.
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through-metallization.

Fig.9 Printed-circuit board and component layout for class-AB broadband test circuit.

2001 Feb 09 9
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

MLD511 MLD512
16 80 250
handbook, halfpage handbook, halfpage
Po sync
Gp Gp D (W)
(dB) (%) 200

12 60
150

D
100
8 40

50

4 20 0
400 500 600 700 800 900 400 500 600 700 800 900
f (MHz)
f (MHz)

Th = 25 C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV); Th = 25 C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV);
sync compression: input 33%, output 27%; sync compression: input 33%, output 27%;
measured in broadband test circuit. measured in broadband test circuit.

Fig.10 Power gain and drain efficiency as functions Fig.11 Peak envelope sync power as a function of
of frequency; typical values. frequency; typical values.

MLD513
16 80
handbook, halfpage

Gp Gp D
(dB) (%)

12 60

8 40

4 20
400 500 600 700 800 900
f (MHz)

Th = 25 C; VDS = 32 V; IDQ = 1 A; CW, class-AB operation;

PL = 150 W; measured in broadband test circuit.

Fig.12 Power gain and drain efficiency as functions

of frequency; typical values.

2001 Feb 09 10
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

PACKAGE OUTLINE
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A

A
F

D1

U1 B

q C

H1 w2 M C M c

1 2

H U2 p E1 E

5 w1 M A M B M

3 4
A

b w3 M Q
e

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 e E E1 F H H1 p Q q U1 U2 w1 w2 w3

5.77 8.51 0.15 22.05 22.05 10.26 10.31 1.78 15.75 18.72 3.38 2.72 34.16 9.91
mm 10.21 27.94 0.25 0.51 0.25
5.00 8.26 0.10 21.64 21.64 10.06 10.01 1.52 14.73 18.47 3.12 2.46 33.91 9.65
0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390
inches 0.402 1.100 0.010 0.020 0.010
0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

99-08-27
SOT540A
99-12-28

2001 Feb 09 11
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

DATA SHEET STATUS

PRODUCT
DATA SHEET STATUS DEFINITIONS (1)
STATUS
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

Note
1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS DISCLAIMERS
Short-form specification The data in a short-form Life support applications These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes, without notice, in the
Characteristics sections of the specification is not implied. products, including circuits, standard cells, and/or
Exposure to limiting values for extended periods may software, described or contained herein in order to
affect device reliability. improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
Application information Applications that are
the use of any of these products, conveys no licence or title
described herein for any of these products are for
under any patent, copyright, or mask work right to these
illustrative purposes only. Philips Semiconductors make
products, and makes no representations or warranties that
no representation or warranty that such applications will be
these products are free from patent, copyright, or mask
suitable for the specified use without further testing or
work right infringement, unless otherwise specified.
modification.

CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2001 Feb 09 12
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

NOTES

2001 Feb 09 13
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

NOTES

2001 Feb 09 14
Philips Semiconductors Product specification

UHF power LDMOS transistor BLF861A

NOTES

2001 Feb 09 15
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Philips Electronics N.V. 2001 SCA 71

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Printed in The Netherlands 613524/02/pp16 Date of release: 2001 Feb 09 Document order number: 9397 750 07753