Hall Effect

Prateek Chauhan
M.Sc Physics
Roll No-16510054
prateek.chauhan@iitgn.ac.in

Jan 31,2017

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Physics Lab Report IIT GANDHINAGAR

Contents
1 Objective 3

2 Introduction 3

3 Apparatus 3

4 Theory 3

5 Observations 4
5.1 Calibration of magnetic field through coil . . . . . . . . . . . . . . . . . . . . . . . . 4
5.2 Variation of Hall voltage with Hall current at constant magnetic field for P-type
semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5.2.1 For magnetic field in +Z direction . . . . . . . . . . . . . . . . . . . . . . . . 5
5.2.2 For magnetic field in -Z direction . . . . . . . . . . . . . . . . . . . . . . . . . 5
5.2.3 Plot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5.3 Variation of Hall voltage with solenoid current (Magnetic field) at constant Hall
current for P-type semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.3.1 For magnetic field in +Z direction . . . . . . . . . . . . . . . . . . . . . . . . 6
5.3.2 For magnetic field in -Z direction . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.3.3 Plot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.4 Variation of Hall voltage with Hall current at constant magnetic field for N -type
semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5.4.1 For magnetic field in +Z direction . . . . . . . . . . . . . . . . . . . . . . . . 7
5.4.2 For magnetic field in -Z direction . . . . . . . . . . . . . . . . . . . . . . . . . 7
5.4.3 Plot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5.5 Variation of Hall voltage with solenoid current (Magnetic field) at constant Hall
current for N-type semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.5.1 For magnetic field in +Z direction . . . . . . . . . . . . . . . . . . . . . . . . 8
5.5.2 For magnetic field in -Z direction . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.5.3 Plot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

6 Calculation 9

7 Results 9

8 References 9

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Physics Lab Report IIT GANDHINAGAR

1 Objective
• To measure Hall coefficient in P and N type semiconductors.

2 Introduction
Hall Effect is a phenomenon that occurs in a conductor carrying a current when it is placed in a
magnetic field perpendicular to the current. The charge carriers in the conductor become deflected
by the magnetic fieldd and give rise to an electric field (Hall Field) that is perpendicular to both
the current and magnetic field. If the current density, Jx is along x and magnetic field, B is along
z, then Hall field, Ey , is either along +y or −y depending on the polarity of the charge carriers in
the material. It was E. H. Hall who first observed the above mentioned event in 1879.
Hall Effect is the basis of many practical applications and devices such as magnetic field mea-
surements, and position and motion detectors. Also, Hall Effect measurement is a useful technique
for characterizing the electric transport properties of metals and semiconductors. Hall Effect sen-
sors are readily used in various sensors such as rotating speed sensors, fluid flow sensors, current
sensors and pressure sensors.

3 Apparatus
Two solenoids, Constant current supply, Four probe, Digital gauss meter, Hall effect apparatus
(which consist of Constant Current Generator (CCG), digital milli voltmeter and Hall probe).

Figure 1: Experimental setup for Hall Effect

4 Theory
As mentioned earlier, the reason for existence of Hall Field in y
direction is because of charge accumulation caused by Lorentz forces
on movementsof charge carriers. In equilibrium this transverse Hall
Field, Ey , will balance the Lorentz forces and current will flow
only in the x-direction. From the Drude theory of conduction it is
obvious that applied electric field, Ex , and the current density, Jx ,
should be related as,
Ex = ρ(Hz ).Jx
where ρ(Hz ) is the magneto-resistance which is field indepen-
dent. And also, for the transverse field, Ey , which balances the
Figure 2: Fields acting on a
Lorentz force, one might expect it to be proportional to both the
p-type semiconductor crystal
applied magnetic field, Hz , and current density, Jx , as,
attached to the probe
Ey = RH .Hz .Jx

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Physics Lab Report IIT GANDHINAGAR

here, RH is called as Hall coefficient which is negative charge carriers and vice versa. In the
presence of electric field, Ex and Ey and magnetic field, Hz , the equation of motion of a negative
charge carrier can be written as,

d~
p 
~ + p~ .H
~ − p~

= −e E
dt mc τ
In steady state the current is independent of time, and therefore px and py will satisfy,
px
−eEx − ωc .py − =0
τ
py
−eEy − ωc .px − =0
τ
where,
eH
ωc =
mc
Now applying py = 0 and J = −(ne/m).p we get,

Ey 1
RH = =−
Jx .Bz nec
It asserts that Hall coefficient depends on no parameters of the metal except the density of charge
carriers.

5 Observations
• For n-type and p-type Germanium (Ge) crystal

– Thickness (z)=5 ∗ 10−2 cm

– Resistivity (ρ)=10Ωcm
– Conductivity (σ)=0.1Ω−1 cm−1

5.1 Calibration of magnetic field through coil

Sr. No. Current I(Amp) Magnetic Field H(Gauss)
1 0.51 160
2 1.00 390
3 1.51 630
4 2.00 870
5 2.50 1120
6 3.01 1350
7 3.50 1580
8 4.00 1810

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Physics Lab Report IIT GANDHINAGAR

5.2 Variation of Hall voltage with Hall current at constant magnetic field for
P-type semiconductor
5.2.1 For magnetic field in +Z direction
Sr.No. Hall current (in mA) Hall voltage (in mV )
1 1.98 9.1
2 3.98 18.2
3 5.98 27.4
4 8.00 36.9
5 10.02 46.0
6 11.98 54.6
7 14.02 63.5
8 16.01 71.5
9 17.99 78.2
10 19.98 84.6

5.2.2 For magnetic field in -Z direction

Sr.No. Hall current (in mA) Hall voltage (in mV )
1 1.99 -3.8
2 3.99 -7.6
3 6.00 -11.4
4 8.00 -15.2
5 10.00 -18.8
6 12.000 -22.8
7 14.00 -25.7
8 16.00 -26.6
9 18.01 -29.2
10 19.99 -28.4

5.2.3 Plot

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5.3 Variation of Hall voltage with solenoid current (Magnetic field) at constant
Hall current for P-type semiconductor
5.3.1 For magnetic field in +Z direction
Sr. No. Solenoid current (in A) Hall voltage (in mV )
1 0.50 19.1
2 1.00 27.1
3 1.49 35.1
4 1.99 43.0
5 2.50 50.9
6 3.00 58.8
7 3.51 66.1
8 4.00 73.0

5.3.2 For magnetic field in -Z direction

Sr. No. Solenoid current (in A) Hall voltage (in mV )
1 0.50 3.2
2 1.01 -4.9
3 1.50 -12.3
4 1.99 -20.1
5 2.50 -27.7
6 2.99 -35.1
7 3.50 -42.5
8 4.00 -49.3

5.3.3 Plot

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5.4 Variation of Hall voltage with Hall current at constant magnetic field for
N -type semiconductor
5.4.1 For magnetic field in +Z direction
Sr.No. Hall current (in mA) Hall voltage (in mV )
1 1.99 -21.7
2 3.99 -42.5
3 5.98 -61.5
4 8.01 -78.7
5 9.99 -92.8
6 11.98 -96.9
7 14.00 -106.3
8 16.03 -113.0

5.4.2 For magnetic field in -Z direction

Sr.No. Hall current (in mA) Hall voltage (in mV )
1 2.00 9.0
2 3.98 10.1
3 5.99 14.5
4 8.01 16.5
5 9.98 17.3
6 11.98 17.7
7 14.03 16.5
8 16.04 15.4

5.4.3 Plot

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Physics Lab Report IIT GANDHINAGAR

5.5 Variation of Hall voltage with solenoid current (Magnetic field) at constant
Hall current for N-type semiconductor
5.5.1 For magnetic field in +Z direction
Sr. No. Solenoid current (in A) Hall voltage (in mV )
1 0.50 -50.8
2 1.00 -62.2
3 1.50 -74.5
4 1.99 -86.6
5 2.51 -99.6
6 3.00 -111.7
7 3.50 -124.0
8 4.00 -136.4

5.5.2 For magnetic field in -Z direction

Sr. No. Solenoid current (in A) Hall voltage (in mV )
1 0.50 -21.3
2 1.00 -9.5
3 1.50 2.3
4 2.00 14.7
5 2.50 27.5
6 3.00 40.1
7 3.50 52.9
8 3.99 65.2

5.5.3 Plot

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Physics Lab Report IIT GANDHINAGAR

6 Calculation
• For P-type probe
z
RH = |(slope)|
H
Slope f rom plot = 4.5 mV /mA
4.5 ∗ 5 ∗ 10−4
RH =
0.086
RH = 0.0261m3 /C

• For N-type probe

z
RH = |(slope)|
H
Slope f rom plot = 7.12 mV /mA
7.12 ∗ 5 ∗ 10−4
RH =
0.086
RH = 0.041m3 /C

7 Results
From plotted graphs Hall coefficient of P-type and N-type probe are determined as RH = 0.0261m3 /C
and RH = 0.041m3 /C respectively.

8 References
• IITGN Physics Laboratory (https : //sites.google.com/a/iitgn.ac.in/ph102/)

• Digital Fundamentals by T.L.Floyd

• https : //www.scribd.com

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