Icrosystems Ngineering: Dr.-Ing. Ronny Gerbach
Icrosystems Ngineering: Dr.-Ing. Ronny Gerbach
Icrosystems Ngineering: Dr.-Ing. Ronny Gerbach
MICROSYSTEMS ENGINEERING
-1-
Contents of Last Lecture
1) Introduction
2) Clean Rooms and Yield
3) Materials for Microsystem Engineering
4) Thin Film Technology
5) Lithography
6) MEMS Technologies
7) Introduction into Packaging Technologies
8) Alternative Approaches for Microsystem Engineering
Locally melted
Vapor material
un-melted
material
Water cooling
Deflection magnet
Electron beam
Anode
Hot cathode
transition to
evaporation
material
For high melting points of the evaporation material zones 2 and 3 can‘t
be reached anymore
Rotatable
shutter
Vacuum
pump Vaporization
source
Cathode
Target
(cooled)
Ar-Plasma
Process gases
(Argon, Target
reactive gases) material
Wafer
substrate
Anode
■ RF-Sputtering:
■ Use of high AC voltage (frequency: 13.56 MHz or multiple)
■ Electrons can’t follow RF-signal but Ar+ ions not increase of plasma rate
resulting in the possibility to reduce the process pressure for the same sputter
rate which enables different grain structure of deposited film
■ Increased sputter rate (approx. 10x higher than for DC sputtering at same
pressure)
Gas flow
Precursor 1 Precursor 2
Gaseous Reacting
gases
Gaseous
Deposition
Solid layer
Wafer substrate
■ Si3N4:
Reaction Vacuum
Process
products pump
gas
Heating
Media supply
-+
■ Electroplating (ECD):
■ Deposition of metals in aqueous Cathode Anode
■ Electroless plating:
■ Deposition of metals in aqueous
environment by reduction of metal
ions without external currents
■ Realization of conform films, mask
less process
■ Materials: Ni, NiAu, NiPdAu
■ Application: UBM metallization