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    2SC732TM: Low Noise Audio Amplifier Applications

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    Rodrigo Negrelli
    This document provides specifications for the Toshiba 2SC732TM transistor, an NPN epitaxial transistor intended for low noise audio amplifier applications. Key specifications include a maximum collector-emitter voltage of 50V, excellent hFE linearity, and low noise figures of 0.5dB at 100Hz and 0.2dB at 1kHz. The document also lists maximum ratings, electrical characteristics, packaging and handling information for the transistor.

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    2SC732TM: Low Noise Audio Amplifier Applications

    Uploaded by

    Rodrigo Negrelli
    91 views4 pages
    This document provides specifications for the Toshiba 2SC732TM transistor, an NPN epitaxial transistor intended for low noise audio amplifier applications. Key specifications include a maximum collector-emitter voltage of 50V, excellent hFE linearity, and low noise figures of 0.5dB at 100Hz and 0.2dB at 1kHz. The document also lists maximum ratings, electrical characteristics, packaging and handling information for the transistor.

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    2sc732tm

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    This document provides specifications for the Toshiba 2SC732TM transistor, an NPN epitaxial transistor intended for low noise audio amplifier applications. Key specifications include a maximum collector-emitter voltage of 50V, excellent hFE linearity, and low noise figures of 0.5dB at 100Hz and 0.2dB at 1kHz. The document also lists maximum ratings, electrical characteristics, packaging and handling information for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    91 views4 pages

    2SC732TM: Low Noise Audio Amplifier Applications

    Uploaded by

    Rodrigo Negrelli
    This document provides specifications for the Toshiba 2SC732TM transistor, an NPN epitaxial transistor intended for low noise audio amplifier applications. Key specifications include a maximum collector-emitter voltage of 50V, excellent hFE linearity, and low noise figures of 0.5dB at 100Hz and 0.2dB at 1kHz. The document also lists maximum ratings, electrical characteristics, packaging and handling information for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2SC732TM

    TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS)

    2SC732TM
    LOW NOISE AUDIO AMPLIFIER APPLICATIONS

    Unit in mm
    High Breakdomn Voltage : VCEO = 50V
    Excellent hFE Linearity
    : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.)
    Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)
    : NF (2) = 0.2dB (Typ.) (f = 1kHz)

    MAXIMUM RATINGS (Ta = 25°C)

    CHARACTERISTIC SYMBOL RATING UNIT

    Collector-Base Voltage VCBO 60 V


    Collector-Emitter Voltage VCEO 50 V
    Emitter-Base Voltage VEBO 5 V
    Collector Current IC 150 mA
    Base Current IB 30 mA
    Collector Power Dissipation PC 400 mW
    Junction Temperature Tj 125 °C JEDEC TO−92
    EIAJ SC−43
    Storage Temperature Range Tstg −55~125 °C
    TOSHIBA 2–5F1B
    Weight: 0.21g

    000707EAA1

    • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
    can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
    buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
    to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
    damage to property.
    In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
    most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
    Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
    • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
    equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
    neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
    failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
    control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
    instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
    shall be made at the customer’s own risk.
    • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
    TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
    use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
    others.
    • The information contained herein is subject to change without notice.

    2001-01-11 1/4
    2SC732TM
    ELECTRICAL CHARACTERISTICS (Ta = 25°C)

    CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

    Collector Cut-off Current ICBO VCB = 60V, IE = 0 — — 0.1 µA


    Emitter Cut-off Current IEBO VEB = 5V, IC = 0 — — 0.1 µA
    DC Current Gain hFE (Note) VCE = 6V, IC = 2mA 200 — 700
    Collector-Emitter Saturation Voltage VCE (sat) IC = 10mA, IB = 1mA — — 0.3 V
    Base-Emitter Voltage VBE VCE = 6V, IC = 2mA — 0.65 — V
    Transition Frequency fT VCE = 6V, IC = 1mA — 150 — MHz
    Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz — 2.0 — pF
    VCE = 6V, IC = 0.1mA, f = 100Hz,
    Noise Figure NF (1) — 0.5 6 V
    RG = 10kΩ
    VCE = 6V, IC = 0.1mA, f = 1kHz,
    Noise Figure NF (2) — 0.2 3 V
    RG = 10kΩ

    Note: hFE Classification GR: 200~400, BL: 350~600

    2001-01-11 2/4
    2SC732TM

    2001-01-11 3/4
    2SC732TM

    2001-01-11 4/4

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