2SA1300

2SA1300
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications
Unit: mm
Medium Power Amplifier Applications
· High DC current gain and excellent hFE linearity

: hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
· Low saturation voltage: VCE (sat) = −0.5 V (max)
(IC = −2 A, IB = −50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO -20 V

VCES -20
Collector-emitter voltage V
VCEO -10
Emitter-base voltage VEBO -6 V
DC IC -2
JEDEC TO-92
Collector current Pulsed A
ICP -5 JEITA SC-43
(Note 1)
Base current IB -0.2 A TOSHIBA 2-5F1B
Collector power dissipation PC 750 mW Weight: 0.21 g (typ.)

Junction temperature Tj 150 °C
Storage temperature range Tstg -55~150 °C
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = -20 V, IE = 0 ¾ ¾ -0.1 mA

Emitter cut-off current IEBO VEB = -6 V, IC = 0 ¾ ¾ -0.1 mA
Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -10 ¾ ¾ V
Emitter-base breakdown voltage V (BR) EBO IE = -1 mA, IC = 0 -6 ¾ ¾ V
hFE (1)
VCE = -1 V, IC = -0.5 A 140 ¾ 600
DC current gain (Note 2)
hFE (2) VCE = -1 V, IC = -4 A 60 120 ¾
Collector-emitter saturation voltage VCE (sat) IC = -2 A, IB = -50 mA ¾ -0.2 -0.5 V
Base-emitter voltage VBE VCE = -1 V, IC = -2 A ¾ -0.83 -1.5 V
Transition frequency fT VCE = -1 V, IC = -0.5 A ¾ 140 ¾ MHz
Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz ¾ 50 ¾ pF
Note 2: hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600
1 2003-03-24
2SA1300
2 2003-03-24
2SA1300
RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3 2003-03-24

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2SA1300

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

· High DC current gain and excellent hFE linearity

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO -20 V

Collector power dissipation PC 750 mW Weight: 0.21 g (typ.)

Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = -20 V, IE = 0 ¾ ¾ -0.1 mA

Note 2: hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600

RESTRICTIONS ON PRODUCT USE 000707EAA

· The information contained herein is subject to change without notice.

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