For Muting and Switching Applications: Absolute Maximum Ratings

2SC2878
TOSHIBA Transistor Silicon NPN Epitaxial Type
www.DataSheet4U.com
2SC2878
For Muting and Switching Applications
Unit: mm
• High emitter-base voltage: VEBO = 25 V (min)
• High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)
• Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V

Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 25 V
Collector current IC 300 mA
Base current IB 60 mA
Collector power dissipation PC 400 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC TO-92
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. JEITA SC-43
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. TOSHIBA 2-5F1B
Please design the appropriate reliability upon reviewing the Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 0.1 μA

Emitter cut-off current IEBO VEB = 25 V, IC = 0 ⎯ ⎯ 0.1 μA
hFE
DC current gain VCE = 2 V, IC = 4 mA 200 ⎯ 1200
(Note)
Collector-emitter saturation voltage VCE (sat) IC = 30 mA, IB = 3 mA ⎯ 0.042 0.1 V
Base-emitter voltage VBE VCE = 2 V, IC = 4 mA ⎯ 0.61 ⎯ V
Transition frequency fT VCE = 6 V, IC = 4 mA ⎯ 30 ⎯ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 4.8 7 pF
Turn-on time ton ⎯ 160 ⎯
Switching time Storage time tstg ⎯ 500 ⎯ ns
Fall time tf ⎯ 130 ⎯

Duty cycle <
= 2%
Note: hFE classification A: 200~700, B: 350~1200
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2SC2878
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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
4 2007-11-01

For Muting and Switching Applications: Absolute Maximum Ratings

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2SC2878

TOSHIBA Transistor Silicon NPN Epitaxial Type

Absolute Maximum Ratings (Ta = 25°C)

Collector-base voltage VCBO 50 V

Electrical Characteristics (Ta = 25°C)

Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 0.1 μA

Turn-on time ton ⎯ 160 ⎯

Switching time Storage time tstg ⎯ 500 ⎯ ns

Fall time tf ⎯ 130 ⎯

Note: hFE classification A: 200~700, B: 350~1200

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

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