Formula Sheet - Final Exam
Formula Sheet - Final Exam
Formula Sheet - Final Exam
NMOSET transistor
1 W v 1 W v
iD n C ox ( v GS V t ) 2 (1 DS ) k n ( v GS V t ) 2 (1 DS )
2 L VA 2 L VA
W W
g m ( n C ox ) V OV 2 ( n C ox ) ID
L L
V
ro A
ID
1 I
VA gm
V OV / 2
|VA|=|V΄A|.L
PMOSFET transistor
1 W v 1 W v
iD p C ox ( v S G Vt ) 2 (1 SD ) k p ( v SG Vt ) 2 (1 SD )
2 L VA 2 L VA
W W
g m ( p C ox ) VOV 2( p C ox ) I D
L L
VA
ro
ID
1
VA
|VA|=|V΄A|.L
BJT transistors
v CE
iC ISe v BE / V T
(1 )
V A
iC IC
iB IB
IC
g m
VT
g m re
1
r
gm
VA
ro
IC
VT=25 mV VBE=0.7 V.
Output resistances: (If applicable, it is assumed that transistors used in each circuit of the below
cases are identical.)
Current Mirror: ro
Common-Emitter (with the emitter resistance of Re and Early effect): (β+1)re+ (β+1) Rero/(ro+RL)
CMRRs
Common-mode gains
Non active-load differential amplifiers (MOSFET): RD/(2RSS) (RD: resistance at the drain)
Non active-load differential amplifiers (BJT): RC/(2REE) (RC: resistance at the collector)
Note:
REE: output resistance of the current source used for the biasing of BJTs.
RSS: output resistance of the current source used for the biasing of MOSFETs.