Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 94 views

    Lec17 MOSFET IV

    Uploaded by

    Blanca MeLendez
    This document provides an overview of MOSFET operation and modeling. It discusses key equations used to model MOSFET behavior in different regimes, including: - The square law model for saturation current as a function of gate voltage and other device parameters. - Models incorporating mobility dependence on gate voltage and gradual channel approximations. - The importance of threshold voltage and its dependence on factors like substrate bias. - Equivalent circuits for low-frequency and higher-frequency AC analysis of MOSFETs. It also compares BJT and MOSFET properties, and discusses topics like subthreshold behavior, mobility, and more complete models spanning subthreshold to saturation.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd

    Lec17 MOSFET IV

    Uploaded by

    Blanca MeLendez
    94 views49 pages
    This document provides an overview of MOSFET operation and modeling. It discusses key equations used to model MOSFET behavior in different regimes, including: - The square law model for saturation current as a function of gate voltage and other device parameters. - Models incorporating mobility dependence on gate voltage and gradual channel approximations. - The importance of threshold voltage and its dependence on factors like substrate bias. - Equivalent circuits for low-frequency and higher-frequency AC analysis of MOSFETs. It also compares BJT and MOSFET properties, and discusses topics like subthreshold behavior, mobility, and more complete models spanning subthreshold to saturation.

    Original Title

    lec17_MOSFET_IV.ppt

    Copyright

    © © All Rights Reserved

    Available Formats

    PPT, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides an overview of MOSFET operation and modeling. It discusses key equations used to model MOSFET behavior in different regimes, including: - The square law model for saturation current as a function of gate voltage and other device parameters. - Models incorporating mobility dependence on gate voltage and gradual channel approximations. - The importance of threshold voltage and its dependence on factors like substrate bias. - Equivalent circuits for low-frequency and higher-frequency AC analysis of MOSFETs. It also compares BJT and MOSFET properties, and discusses topics like subthreshold behavior, mobility, and more complete models spanning subthreshold to saturation.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    94 views49 pages

    Lec17 MOSFET IV

    Uploaded by

    Blanca MeLendez
    This document provides an overview of MOSFET operation and modeling. It discusses key equations used to model MOSFET behavior in different regimes, including: - The square law model for saturation current as a function of gate voltage and other device parameters. - Models incorporating mobility dependence on gate voltage and gradual channel approximations. - The importance of threshold voltage and its dependence on factors like substrate bias. - Equivalent circuits for low-frequency and higher-frequency AC analysis of MOSFETs. It also compares BJT and MOSFET properties, and discusses topics like subthreshold behavior, mobility, and more complete models spanning subthreshold to saturation.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    You are on page 1of 49

    MOSFET I-Vs

    ECE 663

    Operation of a transistor
    VSG > 0
    n type operation
    VSG
    Gate
    Insulator
    More
    electrons

    Source Channel
    Substrate

    Positive gate bias attracts electrons into channel


    Channel now becomes more conductive

    VSD
    Drain

    Some important equations in the


    inversion regime (Depth direction)
    Gate
    Insulator

    VT = ms + 2B + ox
    ox = Qs/Cox

    Source Channel

    Qs = qNAWdm
    Wdm = [2S(2B)/qNA]
    VT = ms + 2B + [4SBqNA]/Cox

    Qinv = -Cox(VG - VT)

    Substrate

    Drain

    MOSFET Geometry
    VG
    Z
    VD

    D
    z
    y

    x
    ECE 663

    How to include y-dependent potential


    without doing the whole problem over?

    ECE 663

    Assume potential V(y) varies slowly along


    channel, so the x-dependent and y-dependent
    electrostats are independent
    (GRADUAL CHANNEL APPROXIMATION)

    i.e.,
    Ignore Ex/y
    Potential is separable in
    x and y
    ECE 663

    How to include y-dependent potentials?


    VG = S + [2SSqNA]/Cox
    S = 2B + V(y)
    Need VG V(y) > VT to invert
    channel at y (V increases
    threshold)
    Since V(y) largest at drain end, that
    end reverts from inversion to
    depletion first (Pinch off)
    SATURATION [VDSAT = VG VT]

    ECE 663

    So current:
    j = qninvv = (Qinv/tinv)v
    I = jA = jZtinv = ZQinvv
    Qinv = -Cox[VG VT - V(y)]

    v = -effdV(y)/dy

    ECE 663

    So current:
    I = eff ZCox[VG VT - V(y)]dV(y)/dy

    Continuity implies Idy = IL

    I = eff ZCox[(VG VT )VD- VD2/2]/L

    ECE 663

    But this current behaves like a parabola !!


    I = eff ZCox[(VG VT )VD- VD2/2]/L

    ID

    IDsat

    VDsat

    VD

    We have assumed inversion in our model (ie, always above pinch-off)


    So we just extend the maximum current into saturation
    Easy to check that above current is maximum for V Dsat = VG - VT
    Substituting, IDsat = (CoxeffZ/2L)(VG-VT)2

    ECE 663

    Whats Pinch off?

    V0G

    V0G

    VG

    VG

    VD

    Now add in the drain voltage to drive a current. Initially you get
    an increasing current with increasing drain bias
    When you reach VDsat = VG VT, inversion is disabled at the drain
    end (pinch-off), but the source end is still inverted
    The charges still flow, just that you cant draw more current

    W
    NE

    Square law theory of MOSFETs

    I = eff ZCox[(VG VT )VD- VD2/2]/L,


    I = eff ZCox(VG VT )2/2L,

    V D > VG - V T

    J = qnv
    n ~ Cox(VG VT )
    v ~ effVD /L

    V D < VG - V T

    Ideal Characteristics of n-channel


    enhancement mode MOSFET

    ECE 663

    Drain current for REALLY small VD


    Z
    1 2

    I D nCi VG VT VD VD
    L
    2

    Z
    I D nCi VG VT VD
    L
    VD VG VT

    Linear operation

    Channel Conductance:

    I D
    Z
    gD
    nCi (VG VT )
    VD V
    L
    G

    Transconductance:

    I D
    Z
    gm
    nCiVD
    VG V
    L
    D

    ECE 663

    In Saturation
    Channel Conductance:

    I D
    gD
    0
    VD V
    G

    Transconductance:

    I D sat

    Z
    2
    nCi VG VT
    2L

    I D
    Z
    gm
    nCi VG VT
    VG V
    L
    D

    ECE 663

    Equivalent Circuit Low Frequency AC

    Gate looks like open circuit


    S-D output stage looks like current source with channel
    conductance
    I D
    I D

    I D

    VD V

    VD

    VG V

    VG

    i g D v d g mv g
    ECE 663

    Equivalent Circuit Higher Frequency AC

    Input stage looks like capacitances gate-to-source(gate) and


    gate-to-drain(overlap)
    Output capacitances ignored -drain-to-source capacitance
    small

    ECE 663

    Equivalent Circuit Higher Frequency AC


    Input circuit:

    i in jCgs Cgd v g j 2fCgatev g


    Input capacitance is mainly gate capacitance

    i out g mv g

    Output circuit:

    i out
    gm

    i in
    2fCgate
    gm

    I D
    Z
    nCiVD
    VG V
    L
    D

    ECE 663

    Maximum Frequency (not in saturation)


    Ci is capacitance per unit area and Cgate is total capacitance
    of the gate

    C gate Ci ZL

    F=fmax when gain=1 (iout/iin=1)

    fmax

    gm

    2Cgate

    fmax

    Z
    nVDCi
    nVD
    L

    2Ci ZL 2L2
    ECE 663

    NE

    Maximum Frequency (not in saturation)

    f max

    max

    nVD
    2L2

    L/v

    v VD / L

    (Inverse transit time)


    ECE 663

    Switching Speed, Power Dissipation


    ton = CoxZLVD/ION
    Trade-off: If Cox too small, Cs and Cd take over and you lose
    control of the channel potential (e.g. saturation)
    (DRAIN-INDUCED BARRIER LOWERING/DIBL)
    If Cox increases, you want to make sure you dont control
    immobile charges (parasitics) which do not contribute to
    current.
    ECE 663

    Switching Speed, Power Dissipation

    Pdyn = CoxZLVD2f
    Pst = IoffVD

    ECE 663

    CMOS
    NOT gate
    (inverter)

    ECE 663

    CMOS

    Vin = 1

    Vout = 0

    NOT gate
    (inverter)

    Positive gate turns nMOS on

    ECE 663

    CMOS

    Vin = 0

    Vout = 1

    NOT gate
    (inverter)

    Negative gate turns pMOS on

    ECE 663

    So what?

    If we can create a NOT gate


    we can create other gates
    (e.g. NAND, EXOR)

    ECE 663

    So what?

    Ring Oscillator

    ECE 663

    So what?

    More importantly, since one is open and one is shut at steady


    state, no current except during turn-on/turn-off
    Low power dissipation

    ECE 663

    Getting the inverter output

    ON

    Gain

    OFF
    ECE 663

    I D
    gD
    0
    VD V
    G

    gm

    I D
    Z
    nCi VG VT
    VG V
    L
    D

    Whats the gain here?

    ECE 663

    Signal Restoration

    ECE 663

    NEW

    BJT vs MOSFET
    RTL logic vs CMOS logic
    DC Input impedance of MOSFET (at gate end) is infinite
    Thus, current output can drive many inputs FANOUT
    CMOS static dissipation is low!!

    ~ IOFFVDD

    Normally BJTs have higher transconductance/current (faster!)

    IC = (qni2Dn/WBND)exp(qVBE/kT)
    gm = IC/VBE = IC/(kT/q)

    ID = CoxW(VG-VT) 2/L
    gm = ID/VG = ID/[(VG-VT)/2]

    Todays MOSFET ID >> IC due to near ballistic operation


    ECE 663

    What if it isnt ideal?


    If work function differences and oxide charges are present,
    threshold voltage is shifted just like for MOS capacitor:

    VT VFB

    ms

    2 s qN A (2 B )
    2 B
    Ci

    Q
    f
    Ci

    2 s qN A (2 B )
    2 B
    Ci

    If the substrate is biased wrt the Source (VBS) the


    threshold voltage is also shifted

    VT VFB

    2 s qN A (2 B VBS )
    2 B
    Ci

    ECE 663

    Threshold Voltage Control


    Substrate Bias:

    VT VFB

    2 s qN A (2 B VBS )
    2 B
    Ci

    VT VT (VBS ) VT (VBS 0)
    2 s qN A
    VT
    Ci

    2 B VBS 2 B

    ECE 663

    Threshold Voltage Control-substrate bias

    ECE 663

    It also affects the I-V


    VG

    The threshold voltage is increased due to the depletion region


    that grows at the drain end because the inversion layer shrinks
    there and cant screen it any more. (Wd > Wdm)
    Qinv = -Cox[VG-VT(y)], I = - effZQinvdV(y)/dy
    VT(y) = + 2 sqNA /Cox
    = 2 B + V(y)

    ECE 663

    It also affects the I-V


    IL = effZCox[VG (2 B+V) - 2 sqNA(2 B+V)/Cox]dV

    I = (Z effCox/L)[(VG2 B)VD VD2/2


    -22 sqNA{(2 B+VD)3/2-(2 B)3/2}/3Cox]

    ECE 663

    We can approximately include this


    Include an additional charge term from the
    depletion layer capacitance controlling V(y)
    Q = -Cox[VG-VT]+(Cox + Cd)V(y)
    where Cd = s/Wdm
    Q = -Cox[VG VT - MV(y)], M = 1 + Cd/Cox

    ID = (ZeffCox/L)[(VG-VT - MVD/2)VD]

    ECE 663

    Comparison between different models


    Square Law Theory
    Bulk Charge Theory

    Body Coefficient

    Still not good below threshold or above saturation

    ECE 663

    Mobility
    Drain current model assumed constant mobility in channel
    Mobility of channel less than bulk surface scattering
    Mobility depends on gate voltage carriers in inversion
    channel are attracted to gate increased surface scattering
    reduced mobility

    ECE 663

    Mobility dependence on gate voltage

    1 (VG VT )

    ECE 663

    Sub-Threshold Behavior
    For gate voltage less than the threshold weak inversion
    Diffusion is dominant current mechanism (not drift)

    n
    n(o ) n(L)
    I D J D A qADn
    qADn
    y
    L

    n(0) ni e

    q ( s B ) / kT

    n(L) ni e

    q ( s B VD ) / kT
    ECE 663

    Sub-threshold

    qADn ni e
    ID
    L

    B / kT

    1 e

    qVD / kT

    q s / kT

    We can approximate s with VG-VT below threshold since all


    voltage drops across depletion region

    qADn ni e
    ID
    L

    / kT

    1 e

    qVD / kT

    q VG VT / kT

    Sub-threshold current is exponential function of applied gate voltage


    Sub-threshold current gets larger for smaller gates (L)
    ECE 663

    Subthreshold Characteristic

    Subthreshold Swing

    log ID

    VG

    ECE 663

    Much of new research depends on reducing S !

    Tunneling transistor

    Band filter like operation

    Ghosh, Rakshit, Datta


    (Nanoletters, 2004)
    (Sconf)min=2.3(kBT/e).(etox/m)

    Hodgkin and Huxley, J. Physiol. 116, 449 (1952a)


    J Appenzeller et al, PRL 04

    Subthreshold slope = (60/Z) mV/decade

    Much of new research depends on reducing S !


    Increase q by collective motion (e.g. relay)
    Ghosh, Rakshit, Datta, NL 03
    Effectively reduce N through interactions
    Salahuddin, Datta
    Negative capacitance
    Salahuddin, Datta
    Non-thermionic switching (T-independent)
    Appenzeller et al, PRL
    Nonequilibrium switching
    Li, Ghosh, Stan
    Impact Ionization
    Plummer

    More complete model sub-threshold to


    saturation
    Must include diffusion and drift currents
    Still use gradual channel approximation
    Yields sub-threshold and saturation behavior for long
    channel MOSFETS
    Exact Charge Model numerical integration

    Z s n
    ID

    L LD 0

    VD s
    B

    e
    F

    np0

    ,V ,
    p p 0
    ECE 663

    Exact Charge Model (Pao-Sah)


    Long Channel MOSFET

    http://www.nsti.org/Nanotech2006/WCM2006/WCM2006-BJie.pdf
    ECE 663

    ECE 663

    You might also like