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    HW 3

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    Nandan Shah
    This document contains an electrical engineering homework assignment with 4 problems: 1) Analyzing a non-uniformly doped semiconductor sample by sketching band diagrams, electric fields, and carrier distributions. 2) Deriving relationships for generation and recombination of carriers under low-level injection conditions. 3) Solving the continuity equation to determine excess carrier distribution in an illuminated semiconductor bar. 4) Calculating carrier concentrations and quasi-Fermi levels for a doped silicon wafer under different light irradiation conditions.

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    HW 3

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    This document contains an electrical engineering homework assignment with 4 problems: 1) Analyzing a non-uniformly doped semiconductor sample by sketching band diagrams, electric fields, and carrier distributions. 2) Deriving relationships for generation and recombination of carriers under low-level injection conditions. 3) Solving the continuity equation to determine excess carrier distribution in an illuminated semiconductor bar. 4) Calculating carrier concentrations and quasi-Fermi levels for a doped silicon wafer under different light irradiation conditions.

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    This document contains an electrical engineering homework assignment with 4 problems: 1) Analyzing a non-uniformly doped semiconductor sample by sketching band diagrams, electric fields, and carrier distributions. 2) Deriving relationships for generation and recombination of carriers under low-level injection conditions. 3) Solving the continuity equation to determine excess carrier distribution in an illuminated semiconductor bar. 4) Calculating carrier concentrations and quasi-Fermi levels for a doped silicon wafer under different light irradiation conditions.

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    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
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    200 views2 pages

    HW 3

    Uploaded by

    Nandan Shah
    This document contains an electrical engineering homework assignment with 4 problems: 1) Analyzing a non-uniformly doped semiconductor sample by sketching band diagrams, electric fields, and carrier distributions. 2) Deriving relationships for generation and recombination of carriers under low-level injection conditions. 3) Solving the continuity equation to determine excess carrier distribution in an illuminated semiconductor bar. 4) Calculating carrier concentrations and quasi-Fermi levels for a doped silicon wafer under different light irradiation conditions.

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    © All Rights Reserved
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    of 2

    UNIVERSITY OF CALIFORNIA

    College of Engineering
    Department of Electrical Engineering and Computer Sciences

    EE 130 / EE 230M Prof. Liu and Dr. Xu


    Spring 2013
    Homework Assignment #3
    Due at the beginning of class on Thursday, 2/14/13

    Problem 1: Non-Uniformly Doped Semiconductor


    A silicon sample maintained at 300K is characterized by the energy band-diagram below:

    a) Do equilibrium conditions prevail? How do you know?


    b) Sketch the electrostatic potential V(x) inside the semiconductor as a function of x.
    c) Sketch the electric field E(x) inside the semiconductor as a function of x.
    d) Suppose the carrier pictured in the diagram moves between x = 0 and x = L without changing its total
    energy. Sketch the kinetic energy and potential energy of the carrier as a function of x.
    e) Roughly sketch n and p versus x
    f) On the same set of coordinates, make a rough sketch of the electron drift-current density and the
    electron diffusion current density as a function of position. For each drawing, briefly explain how you
    arrived at your sketch.

    Problem 2: Generation and Recombination of Carriers


    Assume that the energy level associated with defects within a Si sample is near midgap (i.e. ET  Ei) so
    that n1 p1 ni (ref. Lecture 5 Slide 24) and that n is comparable to p. Setting n = p, show that the
    general-case R-G relationship

    reduces to the special-case relationships

    when low-level injection conditions prevail.


    Problem 3: Continuity Equation
    The two ends of a uniformly doped n-type Si bar of length L are simultaneously illuminated so as to
    create ND excess holes at both x=0 and x=L. The wavelength and intensity of illumination are such that
    no light penetrates into the interior (0<x<L) of the bar and =10-3. Also, steady state conditions prevail,
    T=300 K and ND >> ni.
    a) Based on qualitative reasoning, sketch the expected general form of the pn(x) solution.
    b) Do low-level injection conditions prevail inside the illuminated bar? Explain.
    c) Write down the differential equation (simplest form possible) you must solve to determine pn(x)
    inside the bar.
    d) Write down the general form of the pn(x) solution and the boundary condition(s) appropriate for this
    particular problem.
    e) Establish an expression for the hole current density (Jp) flowing in the illuminated bar at x=0. [Your
    answer may be left in terms of the arbitrary constant(s) appearing in the general form of the pn(x)
    solution].

    Problem 4: Quasi-Fermi Levels


    A silicon wafer maintained at T = 300K is doped with 1015 cm-3 donor atoms.
    a) Find the electron and hole concentrations and the location of the Fermi level with respect to the
    intrinsic Fermi level.
    b) Light irradiating the wafer leads to a steady-state photogenerated density of electrons and holes equal
    to 1012 cm-3. Assume that the wafer is thin when compared to the absorption depth for the light so that
    the free carriers are uniformly distributed throughout its volume. Find the overall electron and hole
    concentrations in the wafer and calculate the positions of the quasi-Fermi levels for the two carrier
    types in an energy band diagram.
    c) Repeat the calculations of (b) under the condition that the light intensity is increased so that the
    photogeneration produces 1018 cm-3 electron-hole pairs.

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