DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION ORDERING INFORMATION

The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE
designed for high current switching applications.
2SK3377 TO-251

FEATURES 2SK3377-Z TO-252

• Low On-state Resistance
★ RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)
★ RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
★ • Low Ciss : Ciss = 760 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±20 A
Note1
★ Drain Current (Pulse) ID(pulse) ±50 A
(TO-252)
Total Power Dissipation (TC = 25°C) PT 30 W
Total Power Dissipation (TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note2
★ Single Avalanche Current IAS 15 A
Note2
★ Single Avalanche Energy EAS 23 mJ

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V

THERMAL RESISTANCE
Channel to Case Rth(ch-C) 4.17 °C/W
Channel to Ambient Rth(ch-A) 125 °C/W

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D14328EJ1V0DS00 (1st edition) The mark ★ shows major revised points. © 1999,2000
Date Published January 2000 NS CP(K)
Printed in Japan

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 2SK3377

★ ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 10 A 35 44 mΩ

RDS(on)2 VGS = 4.0 V, ID = 10 A 54 78 mΩ

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 10 A 5 10 S

Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA

Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Input Capacitance Ciss VDS = 10 V 760 pF

Output Capacitance Coss VGS = 0 V 150 pF

Reverse Transfer Capacitance Crss f = 1 MHz 71 pF

Turn-on Delay Time td(on) ID = 10 A 13 ns

Rise Time tr VGS(on) = 10 V 170 ns

Turn-off Delay Time td(off) VDD = 30 V 43 ns

Fall Time tf RG = 10 Ω 34 ns

Total Gate Charge QG ID = 20 A 17 nC

Gate to Source Charge QGS VDD = 48 V 3.0 nC

Gate to Drain Charge QGD VGS(on) = 10 V 4.7 nC

Body Diode Forward Voltage VF(S-D) IF = 20 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 20 A, VGS = 0 V 39 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 62 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T.
D.U.T.
RG = 25 Ω L
RL VGS
PG. VGS 90 %
50 Ω VDD 10 % VGS(on)
Wave Form 0
RG
VGS = 20 → 0 V PG. VDD
ID 90 %
90 %
IAS BVDSS ID
VGS 10 %
VDS ID 0 10 %
ID 0 Wave Form

VDD τ td(on) tr td(off) tf

τ = 1 µs ton toff
Starting Tch Duty Cycle ≤ 1 %

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

2 Data Sheet D14328EJ1V0DS00

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 2SK3377

PACKAGE DRAWINGS (Unit : mm)

1) TO-251 (MP-3) 2) TO-252 (MP-3Z)

6.5±0.2 2.3±0.2

+0.2
1.5-0.1

+0.2
1.5-0.1
5.0±0.2 0.5±0.1 6.5±0.2 2.3±0.2
4 5.0±0.2
0.5±0.1
1.6±0.2

5.5±0.2

0.8 4.3 MAX.

1.8 TYP.
4

1.0 MIN.
10.0 MAX.
5.5±0.2
13.7 MIN.

1 2 3

1 2 3
7.0 MAX.

MIN.
1.1±0.2

2.0

0.7
0.9 0.8
1.1±0.2
2.3 2.3 MAX. MAX.
0.5-0.1
+0.2 +0.2
0.5-0.1 0.8
1. Gate
2.3 2.3
2. Drain
1.Gate
0.75

3. Source
2.Drain 4. Fin (Drain)
3.Source
4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Body
Gate Diode

Gate
Protection Source
Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Data Sheet D14328EJ1V0DS00 3

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 2SK3377

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confirm that this is the latest version.
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M7 98. 8

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