Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 403 views

    TIP2955 TIP3055: Complementary Silicon Power Transistors

    Uploaded by

    I am number 4
    The TIP3055 and complementary TIP2955 are silicon epitaxial-base planar NPN and PNP transistors intended for power switching circuits. They are mounted in a TO-218 plastic package. The document provides maximum ratings, thermal data, and electrical characteristics for the transistors such as collector cut-off current, collector-emitter sustaining voltage, and transition frequency. Mechanical dimensions for the TO-218 package are also specified.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    TIP2955 TIP3055: Complementary Silicon Power Transistors

    Uploaded by

    I am number 4
    403 views4 pages
    The TIP3055 and complementary TIP2955 are silicon epitaxial-base planar NPN and PNP transistors intended for power switching circuits. They are mounted in a TO-218 plastic package. The document provides maximum ratings, thermal data, and electrical characteristics for the transistors such as collector cut-off current, collector-emitter sustaining voltage, and transition frequency. Mechanical dimensions for the TO-218 package are also specified.

    Original Description:

    data

    Original Title

    Tip 2955

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The TIP3055 and complementary TIP2955 are silicon epitaxial-base planar NPN and PNP transistors intended for power switching circuits. They are mounted in a TO-218 plastic package. The document provides maximum ratings, thermal data, and electrical characteristics for the transistors such as collector cut-off current, collector-emitter sustaining voltage, and transition frequency. Mechanical dimensions for the TO-218 package are also specified.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    403 views4 pages

    TIP2955 TIP3055: Complementary Silicon Power Transistors

    Uploaded by

    I am number 4
    The TIP3055 and complementary TIP2955 are silicon epitaxial-base planar NPN and PNP transistors intended for power switching circuits. They are mounted in a TO-218 plastic package. The document provides maximum ratings, thermal data, and electrical characteristics for the transistors such as collector cut-off current, collector-emitter sustaining voltage, and transition frequency. Mechanical dimensions for the TO-218 package are also specified.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    TIP2955

    TIP3055
    COMPLEMENTARY SILICON POWER
    TRANSISTORS

     SGS-THOMSON PREFERRED SALESTYPES

    DESCRIPTION
    The TIP3055 is a silicon epitaxial-base planar
    NPN transistor mountend in TO-218 plastic
    package and intented for power switching
    circuits, series and shunt regulators, output
    stages and hi-fi amplifiers.
    The complementary PNP type is the TIP2955. 3
    2
    1

    TO-218

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symb ol Parameter Valu e Unit
    V CBO Collector-Base Voltage (IE = 0) 100 V
    V CEO Collector-emitter Voltage (I B = 0) 60 V
    IC Collector Current 15 A
    IB Base Current 7 A
    P tot T otal Dissipation at T c ≤ 25 C
    o
    90 W
    o
    T s tg Storage Temperature -65 to 150 C
    o
    Tj Max. O perating Junction Temperature 150 C

    October 1995 1/4


    TIP2955/TIP3055

    THERMAL DATA
    o
    R thj -ca se Thermal Resistance Junction-case Max 1.4 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

    Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit


    I CEX Collector Cut-off V CE = 100 V V BE = -1.5 V 5 mA
    Current (V BE = 1.5V)
    I CEO Collector Cut-off V CE = 30 V 0.7 mA
    Current (I B = 0)
    I EBO Emitter Cut- off Current V EB = 7 V 5 mA
    (I C = 0)
    V CEO(sus) ∗ Collector-Emitter I C = 30 mA 60 V
    Sustaining Voltage
    (I B = 0)
    V CE(sat) ∗ Collector-emitter IC = 4 A I B = 0.4 A 1 V
    Saturation Voltage I C = 10 A IB = 3.3 A 3 V
    V BE ∗ Base-emitter Voltage IC = 4 A V CE = 4 V 1.8 V
    h FE∗ DC Current Gain IC = 4 A V CE = 4 V 20
    I C = 10 A VCE = 4 V 5
    h fe Small Signal Current IC = 1 A V CE = 10 V f = 1 KHz 15
    Gain
    fT Transition-Frequency I C = 0.5 A V CE = 10 V f = 1 MHz 3 MHz
    RESISTIVE LOAD
    t on Turn-on Time IC = 6 A IB1 = 0.6 A 0.5 µs
    to ff Turn-of T ime I B2 = - 0.6 A V BEof f = - 4 V 0.9 µs
    RL = 5 Ω
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

    2/4
    TIP2955/TIP3055

    TO-218 (SOT-93) MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.

    A 4.7 4.9 0.185 0.193

    C 1.17 1.37 0.046 0.054

    D 2.5 0.098

    E 0.5 0.78 0.019 0.030

    F 1.1 1.3 0.043 0.051

    G 10.8 11.1 0.425 0.437

    H 14.7 15.2 0.578 0.598

    L2 – 16.2 – 0.637

    L3 18 0.708

    L5 3.95 4.15 0.155 0.163

    L6 31 1.220

    R – 12.2 – 0.480

    Ø 4 4.1 0.157 0.161

    E
    A
    C

    L5 L6

    L3
    L2
    G
    H

    ¯
    F

    R 1 2 3 P025A

    3/4
    TIP2955/TIP3055

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
    license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
    in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
    SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
    written approval of SGS-THOMSON Microelectonics.

     1995 SGS-THOMSON Microelectronics - All Rights Reserved

    SGS-THOMSON Microelectronics GROUP OF COMPANIES


    Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
    Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
    .

    4/4

    You might also like