EC8252 Electronic Devices
EC8252 Electronic Devices
EC8252 Electronic Devices
com
DEPARTMENT OF
ELECTRONICS AND COMMUNICATION ENGINEERING
QUESTION BANK
II SEMESTER
EC8252 – Electronic Devices
Regulation – 2017
Academic Year 2017 – 18
Prepared by
Mr. M. Selvaraj, Assistant Professor/ECE
Ms. S. Surabhi, Assistant Professor/ECE
Ms. R. Birundha, Assistant Professor/ECE
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QUESTION BANK
SUBJECT : EC8252 – Electronic Devices
YEAR / SEM : I /II
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current
densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances,
Switching Characteristics, Breakdown in PN Junction Diodes.
PART – A
Q. No. Questions BT Level Competence
1. State mass action law. BTL 1 Remembering
5. Point out why silicon is always preferred than germanium? BTL 4 Analyzing
15. List the types of recovery time and define it. BTL 1 Remembering
19. Examine the energy band structure of PN junction diode. BTL 3 Applying
PART – B
Q. No. Questions BT Level Competence
Recall the quantitative theory of PN diode currents and BTL 1 Remembering
1.
obtain the diode current equation. (16)
Find the expression for PN junction diode forward and BTL 1 Remembering
2. reverse currents with suitable diagram and necessary
explanation.(16)
i) Show the position of Fermi level in N type and P type BTL 1 Remembering
3. semiconductors. (6)
ii)Write notes on classification of semiconductors.(10)
Examine the operation of open circuited PN Junction and BTL 4 Analyzing
4. derive the expression for built in potential barrier with the
help of energy band structure. (16)
Develop the built in barrier potential in a PN junction. BTL 3 Applying
Using the obtained expression calculate the Vo of silicon
5. 18
PN junction at 300k with doping densities Na=1*10 cm-3
15 10
and Nd=1*10 cm-3. Assume ni=1.5*10 cm-3. (16)
i)Explain in detail about how temperature affects the VI BTL 2 Understanding
characteristics of diode.(8)
6.
ii)Describe the deviation of VI characteristics of PN
junction diode from its ideal.(8)
Conclude the theory of PN junction diode and obtain BTL 5 Evaluating
7.
depletion width. (16)
Discuss about the switching characteristics of PN junction diode BTL 1 Remembering
8. with suitable diagrams. (16)
i) Illustrate the break down in PN junction diode. (10) BTL 2 Understanding
9.
ii)Explain the limiting values of PN junction diodes.(6)
Show the expression for transition capacitance and BTL 2 Understanding
10.
diffusion capacitance of a PN diode. (16)
Describe the construction of PN junction diode and BTL 3 Applying
11. explain the forward and reverse characteristics of PN
junction diode and obtain its VI characteristic curve. (16)
Examine the drift and diffusion current densities and BTL 4 Analyzing
12.
obtain the current density for P type and N type.(16)
The diode current is 0.6mA when the applied voltage is BTL 4 Analyzing
13. 400mV and 20mA when the applied voltage is 500mV.
Determine ƞ. Assume kT/q = 25mV. (16)
i)Estimate the voltage when the reverse current in a PN BTL 6 Creating
junction diode reach 90% of its saturation value at room
temperature.(8)
14.
ii)Formulate the dynamic forward and reverse resistance
of a PN junction diode when the applied voltage is 0.25
volt at T=300K given Io=2µA. (8)
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UNIT II BIPOLAR JUNCTION TRANSISTORS
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its
significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation,
D-MOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.
PART A
PART A
PART A
Q. No Questions BT Domain
Level
1. What is SCR? Mention its applications. BTL 1 Remembering
2. Why SCR cannot be used as a bidirectional switch? BTL 1 Remembering
3. Compare BJT and UJT. BTL 4 Analyzing
4. What is Diac? List out its applications. BTL 1 Remembering
5. Write note about Triac and mention its applications. BTL 1 Remembering
6. Draw the two transistor equivalent circuit of SCR. BTL 3 Applying
7. Identify a Diac or Triac by the schematic symbol. BTL 2 Understanding
8. List the applications of UJT. BTL 1 Remembering
9. Describe the working principle of an LED and its
BTL 2 Understanding
applications
10. Sketch the V-I characteristics of UJT. BTL 3 Applying
11. How does Triac differ from Diac? BTL 4 Analyzing
12. Show the V-I characteristics for Triac. BTL 3 Applying
13. “A solar cell is a PN junction device with no voltage
directly applied across the junction”. If it is so, how does a BTL 6 Creating
solar cell deliver power to load?
14. Compare Triac with SCR. BTL 4 Analyzing
15. Express the equation for standoff ratio. BTL 2 Understanding
16. Determine the characteristics of photo transistor. BTL 5 Evaluating
17. If positive voltage is applied to gate, plan what happens in
BTL 6 Creating
DMOS?
18. Discuss the types of opto couplers. BTL 2 Understanding
19. Assess the characteristics of the material used in LED. BTL 5 Evaluating
20. Define CCD and Solar cell. BTL 1 Remembering
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PART B
1. Draw the basic structure of UJT and explain V-I
characteristics of UJT with the help of equivalent circuit. BTL 1 Remembering
(16)
2. i) Discuss the characteristics and working principle of
BTL 2 Understanding
SCR and list out its applications. (8)
ii) Explain the significance of opt couplers. (8)
3. Analyze the spectral output curves and radiation pattern of
BTL 4 Analyzing
LED. (16)
4. i) Outline the structure of Phototransistor and explain its
operation. (8) BTL 4 Analyzing
ii) Explain Power MOSFET & Power BJT in detail. (8)
5. Demonstrate the construction, working principle and BTL 3 Applying
characteristics of Diac and Triac. (16)
6. i) Design a two transistor model of SCR. (8)
ii) Format three phase CCD operation. (8) BTL 6 Creating