AP9990GH-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 60V

▼ Lower On-resistance RDS(ON) 6mΩ
▼ Fast Switching Characteristic ID 100A
G
▼ RoHS Compliant & Halogen-Free
S

Description
Advanced Power
The Advanced MOSFETs
Power fromfrom
MOSFETs APEC provide
APEC the the
provide
designer with the best combination of fast switching,
designer with the best combination of fast switching,
G
D
ruggedized S
ruggedized device
device design,
design, low
low on-resistance
on-resistance and
and cost-effectiveness.
cost-effectiveness. TO-252(H)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current (Chip) 100 A
3
ID@Tc=25℃ Continuous Drain Current, V GS @ 10V 75 A
ID@Tc=100℃ Continuous Drain Current, V GS @ 10V 70 A
1
IDM Pulsed Drain Current 300 A
PD@Tc=25℃ Total Power Dissipation 125 W
PD@TA=25℃ Total Power Dissipation 2.4 W
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 62.5 ℃/W

Data and specifications subject to change without notice 1

201102101
AP9990GH-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=40A - - 6 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V
gfs Forward Transconductance VDS=10V, ID=40A - 55 - S
IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=40A - 59 94 nC
Qgs Gate-Source Charge VDS=48V - 14 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 30 - nC
2
td(on) Turn-on Delay Time VDS=30V - 14 - ns
tr Rise Time ID=40A - 76 - ns
td(off) Turn-off Delay Time RG=1Ω - 25 - ns
tf Fall Time VGS=10V - 12 - ns
Ciss Input Capacitance VGS=0V - 2320 3700 pF
Coss Output Capacitance VDS=25V - 450 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF
Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=40A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 45 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 70 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A.
2
4.Surface mounted on 1 in copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9990GH-HF

300 160

T C =25 C
o 10V T C =175 o C 10V
9.0V 9.0V
250
8.0V 8.0V

ID , Drain Current (A)

ID , Drain Current (A)

120
7.0V
200
7.0V
V G =6.0V
150 80

V G = 6.0V
100

40

50

0 0
0.0 4.0 8.0 12.0 16.0 20.0 24.0 0.0 4.0 8.0 12.0 16.0

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.2 2.4

I D =40A
V G =10V
2.0
Normalized RDS(ON)
Normalized BVDSS (V)

1.1

1.6

1.2

0.9
0.8

0.8 0.4
-50 0 50 100 150 200 -50 0 50 100 150 200

T j , Junction Temperature ( o C) T j , Junction Temperature ( o C)

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature
40 1.6

30 1.2
Normalized VGS(th) (V)

T j =175 o C T j =25 o C
IS(A)

20 0.8

10 0.4

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 200

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9990GH-HF
f=1.0MHz
12 4000

I D =40A
10
VGS , Gate to Source Voltage (V)

3000
V DS =30V
8 V DS =36V
V DS =48V C iss

C (pF)
6 2000

1000

2
C oss
C rss
0 0
0 20 40 60 80 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

Operation in this area

limited by RDS(ON)
100 0.2
ID (A)

100us
0.1
0.1

0.05

1ms PDM
10 t
0.02
T
10ms
0.01
100ms
T C =25 o C
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
DC
Single Pulse Single Pulse

1 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform