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r05320403 Microwave Engineering
r05320403 Microwave Engineering
1
III B.Tech II Semester Regular Examinations, Apr/May 2008
MICROWAVE ENGINEERING
( Common to Electronics & Communication Engineering and Electronics &
Telematics)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
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1. (a) Derive the expression for guide wave length of TEmn mode in rectangular
wave guide.
(b) What are the advantages of dominant mode propagation? [8+8]
2. (a) What are TEnm and TMnm modes w.r.t a circular wave guide. Sketch the
dominant modes.
(b) A cylindrical wave guide has a inner radius of 2 cm. Find the cut off frequency
for the guide operating in TE11 mode. Calculate λ g and ZT E at 10 GHz (λ0
= 3 cm). [8+8]
3. Write short notes on:
(a) Wave guide Irises
(b) Rat ? Race hybrid
(c) Dielectric phase shifters. [16]
4. (a) Explain the characteristics of ferrite materials.
(b) Derive the S - matrix for 4 port directional coupler when the coupling factor
is 3dB. [8+8]
5. (a) A reflex klystron operates under the following conditions:
V0 = 600v, I0 = 11.45mA, L = 1mm.
Rsh = 15k − 2, fr = 9GHZ.
The tube is oscillating at fr at the peak of n = 1 43 mode.
Assume β1
i. The microwave gap voltage.
ii. Repeller Voltage for the mode 1 34 .
(b) Draw the equivalent circuit of reflex klystron & explain about the electronic
admittance of it. [8+8]
6. (a) A helix travelling wave tube is operated with a Beam current of 300mA, beam
Votage of 5KV, characteristic Impedance of 20Ω. What length of helix will be
Selected to give an output power gain of 500db at 10GHz.
(b) Explain the construction & working of TWT. [8+8]
7. (a) Derive the criterion for classifying the modes of operation for Gunn effect
diodes
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Code No: R05320403 Set No. 1
(b) An n-type GaAs Gunn diode has following parameters
Electron drift velocity Vd = 2.5 × 105 m/s
Negative Electron mobility |µn | = 0.015 m2 / v s
Relative dielectric constant εr = 13.1
8. (a) How are microwave measurements different from low frequency measurements.
(b) What is the average power of a periodicwave if the peak power is 1300 W and
the pulse width is .56 and periodic frequency of the wave is 1500 Hz. [8+8]
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Code No: R05320403 Set No. 2
III B.Tech II Semester Regular Examinations, Apr/May 2008
MICROWAVE ENGINEERING
( Common to Electronics & Communication Engineering and Electronics &
Telematics)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆
1. (a) What are TEM, TE, TM and HE modes. Sketch the field patterns for domi-
nant modes in a rectangular wave guides.
(b) A rectangular wave guide has a = 4 cm, b = 3 cm as its sectional dimensions.
Find all the modes which will propagate at 500 MHz. [8+8]
2. (a) Derive the Q for TM111 mode of rectangular cavity assuming lossy conducting
walls and lossless dielectric.
(b) The quality factor of micro strip line is reciprocal of the dielectric loss tangent
θ and is relatively constant with frequency. Prove this statement. [8+8]
3. (a) Show the attenuation produced by rotary vane attenuator is given by - 40 log
(sinθ).
(b) Describe in detail about linear phase changer. [8+8]
4. (a) Describe microwave component which makes use of Faraday rotation principle.
(b) What are the advantages of scattering matrix representation over impedance
or admittance matrix representation? [8+8]
5. (a) Explain the gain Bandwidth product limitation & Transit angle effects in
conventional tubes at microwave frequencies.
(b) A reflex klystron operates under the following conditions
V0 = 900v, L = 1mm
Rsh = 25k − 2, me = 1.759 × 1011 , fr = 9GHZ
The tube is oscillating at fr at the peak of n =2 mode or 1 34 mode.
Assume that the transit time through the gap & beam loading can be ne-
glected.
i. Find the value of repeller voltage Vr .
ii. Find the D.C. current necessary to give a microwave gap voltage of 100v.
iii. What is the electronic efficiency under this condition. [8+8]
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Code No: R05320403 Set No. 2
iii. Hartree anode voltage.
(b) Describe the effect of DC axial field on the electrons traveling from cathode
to anode of a magnetron &describe the combined effect of the axial magnetic
field & radial DC field .define the cutoff field. [8+8]
7. (a) A Ku-band IMPATT diode has a pulse operating voltage of 100v and a pulse
operating current of 0.9 A. The efficiency is about 10%. Calculate
i. The output power
ii. The duty cycle if the pulse width is 0.01ns and frequency is 16 GHz.
(b) Describe the principle of operation of IMPATT diode. [8+8]
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Code No: R05320403 Set No. 3
III B.Tech II Semester Regular Examinations, Apr/May 2008
MICROWAVE ENGINEERING
( Common to Electronics & Communication Engineering and Electronics &
Telematics)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆
1. (a) Derive the wave equation for a TM wave and obtain all the field components
in a rectangular wave guide.
(b) A rectangular wave guide with dimension of 3 × 2 cm operates in the TM11
mode at 10 GHz. Determine the characteristic wave impedance. [8+8]
3. (a) Show the attenuation produced by rotary vane attenuator is given by - 40 log
(sinθ).
(b) Describe in detail about linear phase changer. [8+8]
5. (a) What are the limitations of conventional tubes at microwave frequencies. De-
scribe the construction & working of two cavity klystron amplifier.
(b) A reflex klystron having an accelerated field of 300v oscillates at a frequency of
10GHZ with a retarding field of 500v. If its cavity is retured to 9GHZ. What
must be the new value of retarding field fro oscillations in the same mode to
take place? [8+8]
6. (a) In a circular Klystron , a=0.10m, b=0.40m, β= 1.0 mT, Vb=5KV. Find the
Hulls Cut-off VOltage & cut-off magnetic flux density.
(b) Compare & contrast TWT & Klystron amplifier. [8+8]
7. (a) Derive the criterion for classifying the modes of operation for Gunn effect
diodes
(b) An n-type GaAs Gunn diode has following parameters
Electron drift velocity Vd = 2.5 × 105 m/s
Negative Electron mobility |µn | = 0.015 m2 / v s
Relative dielectric constant εr = 13.1
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Code No: R05320403 Set No. 3
8. (a) The cablibrated power from a generator as read at the power meter is 25mw.
When a 3dB attenuator with a VSWR of 1.3/1 is inserted between the gener-
ator and detector what value should the power meter read.
(b) Compare the power ratio and RF substitution methods of measuring attenu-
ation provided by the microwave component. [8+8]
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Code No: R05320403 Set No. 4
III B.Tech II Semester Regular Examinations, Apr/May 2008
MICROWAVE ENGINEERING
( Common to Electronics & Communication Engineering and Electronics &
Telematics)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆
2. (a) Explain the concepts of propagation delay time for a strip line.
(b) Is the effective dielectric constant of a micro strip line a function of relative
dielectric constant justify. [8+8]
3. (a) Sketch a 4 port hybrid junction and justify that it is a basically a 3 dB direc-
tional coupler.
(b) A matched generator with a power of one watt is connected to the H ? arm
of magic tee C (port 4). The E arm (port 3) is match terminated and the
length of the coplanar arms is the same. Compute the power delivered to the
termination at port 1, 2 and 3 and the power reflected at port 4 when ports 1
and 2 are match terminated. [8+8]
4. What is Faraday rotation? Explain the working of a ferrite circulator with neat
sketches. How can it be used as an isolator? [16]
5. (a) Explain in detail bunching process & obtain expression for bunching parameter
in a two cavity klystron amplifier.
(b) A reflex klystron is to be operated at a frequency of 10GHZ. With dc beam
voltage 400v. Repeller spacing 0.1cm for 1 43 mode. Determine the maximum
value of power & corresponding repeller voltage for beam current of 30mA.
[8+8]
6. (a) Give the different types & explain the characteristics of slow wave structure.
(b) A TWT operates with following parameters:
Vb=2.5KV, Ib=25mA, Zo =10 Ω, circuit length,L=50,f=9GHz
Find the gain parameter & power gain. [8+8]
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Code No: R05320403 Set No. 4
(b) Draw the graph between negative resistance versus transit angle and explain
its Shape. [8+8]
8. (a) The signal power at the input of a device is 10 mw. The signal power at the
output of same device is 0.2mw. Calculate the insertion loss in db of this
component.
(b) Explain the bolometric method of measuring microwave power. [8+8]
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