STGW30NC120HD

N-channel 1200V - 30A - TO-247

very fast PowerMESH™ IGBT

Features
VCE(sat) IC
Type VCES
@25°C @100°C
STGW30NC120HD 1200V < 2.75V 30A

■ Low on-losses
3
■ Low on-voltage drop (Vcesat) 2
1
■ High current capability
TO-247
■ High input impedance (voltage driven)
■ Low gate charge
■ Ideal for soft switching application

Application
Figure 1. Internal schematic diagram
■ Induction heating

Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix “H”
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) maintaining a low
voltage drop.

Table 1. Device summary

Order code Marking Package Packaging

STGW30NC120HD GW30NC120HD TO-247 Tube

October 2007 Rev 9 1/13

www.st.com 13
Contents STGW30NC120HD

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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STGW30NC120HD Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGS = 0) 1200 V

IC (1) Collector current (continuous) at 25°C 60 A

IC (1) Collector current (continuous) at 100°C 30 A

ICL (2) Collector current (pulsed) 135 A

VGE Gate-emitter voltage ±25 V

PTOT Total dissipation at TC = 25°C 220 W
If Diode RMS forward current at TC = 25°C 30 A
Tj Operating junction temperature –55 to 150 °C
1. Calculated according to the iterative formula:

T –T
JMAX C
I ( T ) = -----------------------------------------------------------------------------------------------------
-
C C R × V (T , I )
THJ – C CESAT ( MAX ) C C

2. Vclamp=80% of BVces, Tj=150°C, RG=10Ω, VGE=15V

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.57 °C/W

Rthj-amb Thermal resistance junction-ambient (diode) 1.6 °C/W
Rthj-amb Thermal resistance junction-ambient (IGBT) 30 °C/W

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Electrical characteristics STGW30NC120HD

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter
VBR(CES) IC = 1mA, VGE = 0 1200 V
breakdown voltage

Collector-emitter saturation VGE= 15V, IC= 20A, Tj= 25°C 2.2 2.75 V
VCE(SAT)
voltage VGE= 15V, IC= 20A, Tj=125°C 2.0 V

VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA 3.75 5.75 V

Collector-emitter leakage VCE =Max rating,Tc=25°C 500 µA

ICES
current (VGE = 0) VCE =Max rating, Tc=125°C 10 mA

Gate-emitter leakage
IGES VGE =± 20V, VCE = 0 ± 100 nA
current (VCE = 0)

gfs Forward transconductance VCE = 25V, IC= 20A 14 S

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance

2510 pF
Output capacitance
Coes VCE = 25V, f = 1 MHz, VGE=0 175 pF
Reverse transfer
Cres 30 pF
capacitance
Qg Total gate charge 110 nC
VCE = 960V,
Qge Gate-emitter charge 16 nC
IC= 20A,VGE=15V
Qgc Gate-collector charge 49 nC

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STGW30NC120HD Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 960V, IC = 20A 29 ns

tr Current rise time RG= 10Ω, VGE= 15V, 11 ns
(di/dt)on Turn-on current slope Tj=25°C (see Figure 17) 1820 A/µs

td(on) Turn-on delay time VCC = 960V, IC = 20A 27 ns

tr Current rise time RG= 10Ω, VGE= 15V, 14 ns
(di/dt)on Turn-on current slope Tj= 125°C (see Figure 17) 1580 A/µs

tr(Voff) Off voltage rise time VCC = 960V, IC = 20A 90 ns

td(off) Turn-off delay time RG= 10Ω, VGE= 15V, 275 ns
tf Current fall time Tj= 25°C (see Figure 17) 312 ns

tr(Voff) Off voltage rise time VCC = 960V, IC = 20A 150 ns

td(off) Turn-off delay time RG= 10Ω, VGE= 15V, 336 ns
tf Current fall time Tj= 125°C (see Figure 17) 592 ns

Table 7. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon (1) Turn-on switching losses VCC = 960V, IC = 20A 1660 µJ

(2) Turn-off switching losses RG= 10Ω, VGE= 15V, 4438 µJ
Eoff
Ets Total switching losses Tj= 25°C (see Figure 17) 6098 µJ

Eon (1) Turn-on switching losses VCC = 960V, IC = 20A 3015 µJ

Eoff (2) Turn-off switching losses RG= 10Ω, VGE= 15V, 6900 µJ
Ets Total switching losses Tj= 125°C (see Figure 17) 9915 µJ

1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current

Table 8. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

If = 20A, Tj = 25°C 1.9 2.5 V

Vf Forward on-voltage
If = 20A, Tj = 125°C 1.7 V
trr Reverse recovery time If = 20A, VR = 27V, 152 ns
Qrr Reverse recovery charge Tj = 125°C, di/dt = 100A/µs 722 nC
Irrm Reverse recovery current (see Figure 20) 9 A

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Electrical characteristics STGW30NC120HD

2.1 Electrical characteristics (curves)

Figure 2. Output characteristics Figure 3. Transfer characteristics

Figure 4. Transconductance Figure 5. Collector-emitter on voltage

vs. temperature

Figure 6. Gate charge vs. gate-source Figure 7. Capacitance variations

voltage

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STGW30NC120HD Electrical characteristics

Figure 8. Normalized gate threshold Figure 9. Collector-emitter on voltage

voltage vs. temperature vs. collector current

Figure 10. Normalized breakdown Figure 11. Switching losses vs.

voltage vs. temperature temperature

Figure 12. Switching losses vs. gate Figure 13. Switching losses vs. collector
resistance current

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Electrical characteristics STGW30NC120HD

Figure 14. Thermal Impedance Figure 15. Turn-off SOA

Figure 16. Emitter-collector diode

characteristics

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STGW30NC120HD Test circuit

3 Test circuit

Figure 17. Test circuit for inductive load Figure 18. Gate charge test circuit
switching

Figure 19. Switching waveform Figure 20. Diode recovery time waveform

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Package mechanical data STGW30NC120HD

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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STGW30NC120HD Package mechanical data

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216

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Revision history STGW30NC120HD

5 Revision history

Table 9. Document revision history

Date Revision Changes

23-Nov-2005 1 First issue.

17-Mar-2006 2 Complete version
05-May-2006 3 Modified value on Table 2.: Absolute maximum ratings
30-May-2006 4 New values onTable 3: Thermal resistance
23-Jun-2006 5 Modified value on Table 4.: Static
Modified TJ temperature range to 150°C in
07-Sep-2006 6
Table 2.: Absolute maximum ratings
14-Nov-2006 7 Modified Figure 5. and Figure 9.
26-Jan-2007 8 Typing error on first page.
04-Oct-2007 9 Modified test conditions in Table 4.: Static

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STGW30NC120HD

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