STGW20NC60VD

30 A, 600 V, very fast IGBT

Features
■ High current capability
■ High frequency operation up to 50 KHz
■ Very soft ultra fast recovery antiparallel diode

Description
3
This IGBT utilizes the advanced Power MESH™ 2
1
process resulting in an excellent trade-off
between switching performance and low on-state TO-247
behavior.

Applications
■ High frequency inverters, UPS
■ Motor drive Figure 1. Internal schematic diagram
■ SMPS and PFC in both hard switch and
resonant topologies

Table 1. Device summary

Order code Marking Package Packaging

STGW20NC60VD GW20NC60VD TO-247 Tube

March 2010 Doc ID 9983 Rev 5 1/14

www.st.com 14
Contents STGW20NC60VD

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 7

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 Doc ID 9983 Rev 5

STGW20NC60VD Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

IC(1) Continuous collector current at Tc= 25°C 60 A

IC (1) Continuous collector current at Tc= 100°C 30 A

ICP (2) Pulsed collector current 150 A

ICL(3) Turn-off latching current 100 A

VGE Gate-emitter voltage ± 20 V

IF Diode RMS forward current at Tc=25°C 30 A
Surge not repetitive forward current
IFSM 120 A
tp = 10 ms sinusoidal
PTOT Total dissipation at TC = 25°C 200 W
Tj Operating junction temperature
– 55 to 150 °C
Tstg Storage temperature
1. Calculated according to the iterative formula:

T j ( max ) – T C
I C ( T C ) = ---------------------------------------------------------------------------------------------------------
-
R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )

2. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
3. Vclamp = 80 % VCES, TJ = 150 °C, RG = 10 Ω, VGE = 15 V.

Table 3. Thermal data

Symbol Parameter Value Unit

Thermal resistance junction-case IGBT 0.63 °C/W

Rthj-case
Thermal resistance junction-case diode 1.5 °C/W
Rthj-amb Thermal resistance junction-ambient 50 °C/W

Doc ID 9983 Rev 5 3/14

Electrical characteristics STGW20NC60VD

2 Electrical characteristics

(Tj =25°C unless otherwise specified)

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES IC = 1 mA 600 V
voltage (VGE = 0)

Collector-emitter saturation VGE=15 V, IC=20 A 1.8 2.5 V

VCE(sat)
voltage VGE=15 V, IC=20 A,Tj=125 °C 1.7 V
VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V

Collector-cut-off current VCE = 600 V 250 µA

ICES
(VGE = 0) VCE=600 V, Tj= 125 °C 1 mA
Gate-emitter leakage
IGES VGE = ± 20V ±100 nA
current (VCE = 0)

gfs Forward transconductance VCE = 15 V, IC= 20 A 15 S

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max Unit

Cies Input capacitance

2200 pF
Output capacitance
Coes VCE = 25V, f = 1 MHz, VGE= 0 - 225 pF
Reverse transfer
Cres 50 pF
capacitance
Qg Total gate charge VCE = 390V, IC = 20A, 100 140 nC
Qge Gate-emitter charge VGE = 15V, - 16 nC
Qgc Gate-collector charge (see Figure 18) 45 nC

4/14 Doc ID 9983 Rev 5

STGW20NC60VD Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC=390 V, IC= 20 A, 31 ns

tr Current rise time RG=3.3 Ω, VGE=15V - 11 - ns
(di/dt)onf Turn-on current slope (see Figure 17) 1600 A/µs

td(on) Turn-on delay time VCC=390 V, IC= 20 A, 31 ns

tr Current rise time RG=3.3 Ω, VGE=15 V - 11.5 - ns
(di/dt)on Turn-on current slope Tj=125°C (see Figure 17) 1500 A/µs

tr(Voff) Off voltage rise time VCC=390 V, IC= 20 A, 28 ns

td(off) Turn-off delay time RG=3.3 Ω, VGE=15 V - 100 - ns
tf Current fall time (see Figure 17) 75 ns

tr(Voff) Off voltage rise time VCC=390 V, IC= 20 A, 66 ns

td(off) Turn-off delay time RG=3.3 Ω, VGE=15 V - 150 - ns
tf Current fall time Tj=125°C (see Figure 17) 130 ns

Table 7. Switching energy (inductive load)

Symbol Parameter Test conditions Min Typ. Max Unit

Eon (1) Turn-on switching losses VCC=390 V, IC= 20 A, 220 300 µJ

Eoff Turn-off switching losses RG=3.3 Ω, VGE=15 V, - 330 450 µJ
Ets Total switching losses (see Figure 19) 550 750 µJ
VCC=390 V, IC= 20 A,
Eon (1) Turn-on switching losses 450 µJ
RG=3.3 Ω, VGE=15 V,
Eoff Turn-off switching losses - 770 µJ
Tj= 125°C
Ets Total switching losses 1220 µJ
(see Figure 19)
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19. Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C).

Doc ID 9983 Rev 5 5/14

Electrical characteristics STGW20NC60VD

Table 8. Collector-emitter diode

Symbol Parameter Test conditions Min Typ. Max Unit

IF = 20 A 2 V
VF Forward on-voltage - -
IF = 20 A, Tj = 125°C 1.6 V

trr Reverse recovery time IF = 20 A, VR = 40 V, 44 ns

Qrr Reverse recovery charge Tj = 25°C, di/dt =100 A/µs - 66 - nC
Irrm Reverse recovery current (see Figure 20) 3 A

IF = 2 0A, VR = 40 V,
trr Reverse recovery time 88 ns
Tj = 125°C,
Qrr Reverse recovery charge - 237 - nC
di/dt =100 A/µs
Irrm Reverse recovery current 5.4 A
(see Figure 20)

6/14 Doc ID 9983 Rev 5

STGW20NC60VD Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Output characteristics Figure 3. Transfer characteristics

Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs

temperature

Figure 6. Collector-emitter on voltage vs Figure 7. Normalized gate threshold vs

collector current temperature

Doc ID 9983 Rev 5 7/14

Electrical characteristics STGW20NC60VD

Figure 8. Normalized breakdown voltage vs Figure 9. Gate charge vs gate-emitter voltage

temperature

Figure 10. Capacitance variations Figure 11. Switching losses vs temperature

Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current

8/14 Doc ID 9983 Rev 5

STGW20NC60VD Electrical characteristics

Figure 14. Thermal impedance Figure 15. Turn-off SOA

Figure 16. Emitter-collector diode

characteristics
!-V
) &!



4*  #
MAXIMUMVALUES



 4* # 4* #
TYPICALVALUES MAXIMUMVALUES




        
6&6

Doc ID 9983 Rev 5 9/14

Test circuits STGW20NC60VD

3 Test circuits

Figure 17. Test circuit for inductive load Figure 18. Gate charge test circuit
switching

Figure 19. Switching waveforms Figure 20. Diode recovery times waveform

10/14 Doc ID 9983 Rev 5

STGW20NC60VD Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

Doc ID 9983 Rev 5 11/14

Package mechanical data STGW20NC60VD

TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50

12/14 Doc ID 9983 Rev 5

STGW20NC60VD Revision history

5 Revision history

Table 9. Revision history

Date Revision Changes

Stylesheet updated.
Added switching losses maximum values inTable 7: Switching
12-Jul-2004 4
energy (inductive load).
Inserted Figure 20: Diode recovery times waveform.
Inserted IFSM parameter on Table 2: Absolute maximum
ratings.
09-Mar-2010 5 Updated Figure 16: Emitter-collector diode characteristics and
package mechanical data.
Minor text changes to improve readability.

Doc ID 9983 Rev 5 13/14

 STGW20NC60VD

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2010 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com

14/14 Doc ID 9983 Rev 5