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com

  Small Signal MOSFET Bare Die ‐ 2N7000
 
Rev 1.0
N-Channel
  Enhancement Mode Field Effect Transistor in bare die form 02/26/18
 
Features:
 
Die Dimensions in µm (mils)

ƒ  
High Density Cell Design for Low RDS(ON) 550 (21.65)
ƒ Voltage
  Controlled Small Signal Switch
120 155
ƒ Rugged
  and Reliable with Gold Back Metal (4.72 (6.10)
)
ƒ High Reliability tested grades for Military + Space
 

Ordering
  Information:

450 (17.72)
(7.87)
200
  (4.72)
The following part suffixes apply:
120

 
ƒ No suffix - MIL-STD-750 /2072 Visual Inspection

ƒ  
“H” - MIL-STD-750 /2072 Visual Inspection
+ MIL-PRF-38534 Class H LAT
 
ƒ “K” - MIL-STD-750 /2072 Visual Inspection G = GATE S = SOURCE
  + MIL-PRF-38534 Class K LAT
DIE BACK = DRAIN
LAT = Lot  Acceptance Test.

For further  information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification
 

 
Supply Formats: Mechanical Specification
 
ƒ Default – Die in Waffle Pack (400 per tray capacity) Die Size 550 x 450 µm
  (Excluding Saw Street) 22 x 18 mils
ƒ Sawn Wafer on Tape – On request
120 x 120 µm
  Gate Pad Size
ƒ Unsawn Wafer – On request 4.72 x 4.72 mils
155 x 200 µm
  Source Pad Size
ƒ With additional electrical selection – On request 6.10 x 7.87 mils
  140 (±20) µm
ƒ Sawn as pairs or adjacent pair pick – On request Die Thickness
5.51 (±0.79) mils
  Top Metal Composition Al-Si 4.6µm
ƒ Assembled in metal or ceramic package – On request
Back Metal Composition Au 0.9µm
 
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  Small Signal MOSFET Bare Die ‐ 2N7000
 
Rev 1.0
 
Absolute Maximum Ratings1 TJ = 25°C unless otherwise stated 02/26/18
  PARAMETER SYMBOL VALUE UNIT
Drain-to-Source Voltage VDSS 60 V
  Voltage (RGS ≤ 1MΩ)
Drain-Gate VDGR 60 V
Gate-Source Voltage - Continuous ±20
 
Gate-Source Voltage – Non VGSS V
±40
Repetitive (tp < 50µs)
 
Maximum Drain Current - Continuous 200
ID mA
Maximum Drain Current - Pulsed 500
 
Maximum Power Dissipation 400 mW
PD
Derated above 25°C2 3.2 mW/°C
 
Junction & Storage Temperature TJ, Tstg -55 to 150 °C
THERMAL
  CHARACTERISTICS
Thermal Resistance,
2 RθJA 312.5 °C/W
Junction
  to Ambient
1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may
reduce device reliability.
 
2. Power dissipation & thermal characterisation in TO-92 package. Performance at die level dependent on assembly method and substrate choice.

Electrical
  Characteristics TJ = 25°C unless otherwise stated
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
 
OFF CHARACTERISTICS3
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 10µA 60 - - V
 
VDS = 48V, VGS = 0 - - 1 µA
Zero Gate Voltage Drain Current IDSS
  VDS = 48V, VGS = 0, TJ = 125°C - - 1 mA
Gate-Body Leakage, Forward IGSSF VGS = 15V, VDS = 0V - - 10 nA
Gate-Body
  Leakage, Reverse IGSSR VGS = -15V, VDS = 0V - - -10 nA
ON CHARACTERISTICS3
Gate  Threshold Voltage VGS(th) VDS = VGS, ID = 1mA 0.8 2.1 3 V
VGS = 10V, ID = 500mA - 1.2 5
 
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 500mA, TJ = 125°C - 1.9 9 Ω
VGS = 4.5V, ID = 75mA - 1.8 5.3
 
VGS = 10V, ID = 500mA - 0.6 2.5 V
Drain-Source On-Voltage VDS(ON)
VGS = 4.5V, ID = 75mA - 0.14 0.4 V
 
On-State Drain Current ID(ON) VGS = 4.5V, VDS = 10V 75 600 - mA
Forward
  Transconductance gFS VDS = 10V, ID = 200mA 100 320 - mS
DYNAMIC CHARACTERISTICS4
Input
  Capacitance Ciss - 20 50
Output Capacitance Coss VDS = 25V, VGS = 0V, f = 1MHz - 11 25 pF
Reverse  Transfer Capacitance Crss - 4 5
Turn-On Time ton VDD = 15V, RL = 25Ω, ID = 500mA, - - 10
  Turn-Off Time ns
toff VGS= 10V, RGEN = 25Ω - - 10

3.  Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%. 4. Not production testing in die form, characterized by chip design & tested in package LAT.

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Small Signal MOSFET Bare Die ‐ 2N7000
 
Rev 1.0
Typical  Electrical Characteristics 02/26/18

 
Fig 1 – On‐Region Characteristics Fig 2 – On‐Resistance Variation with Gate 
  Voltage and Drain Current 

  Fig 3 – On‐Resistance Variation with  Fig 4 – On‐Resistance Variation with Drain 
Temperature  Current and Temperature 
 

 
Fig 5 – Transfer Characteristics  Fig 6 – Gate Threshold variation with Temperature

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Small Signal MOSFET Bare Die ‐ 2N7000
 
Rev 1.0
Typical  Electrical Characteristics continued 02/26/18

 
Fig 7 – Gate Threshold variation with  Fig 8 – Body Diode Forward Voltage 
  Temperature  variation with Temperature 

Fig 9 – Capacitance Characteristics Fig 10 – Gate Charge Characteristics

DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon
Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind.

LIFE SUPPORT POLICY: Silicon Supplies Ltd components may be used in life support devices or systems only with the express written
approval of Silicon Supplies Ltd, if a failure of such components can reasonably be expected to cause the failure of that life support device or
system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.

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