MDP2N60/MDF2N60 N-channel MOSFET 600V

MDP2N60/MDF2N60
N-Channel MOSFET 600V, 2.0A, 4.5Ω

General Description Features

These N-channel MOSFET are produced using advanced
VDS = 600V
MagnaChip’s MOSFET Technology, which provides low on-
ID = 2.0A @ VGS = 10V
state resistance, high switching performance and excellent
RDS(ON) ≤ 4.5Ω @ VGS = 10V
quality.

These devices are suitable device for SMPS, high Speed Applications
switching and general purpose applications.

Power Supply

PFC

High Current, High Speed Switching

G
TO-220 TO-220F
MDP Series MDF Series
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol MDP2N60 MDF2N60 Unit
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 2.0 2.0* A
Continuous Drain Current o
ID
TC=100 C 1.2 1.2* A
(1)
Pulsed Drain Current IDM 8.0 8.0* A
TC=25oC 53.9 22.7 W
Power Dissipation PD
Derate above 25 oC 0.43 0.18 W/ oC

Repetitive Avalanche Energy(1) EAR 5.39 mJ

(3)
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns
Single Pulse Avalanche Energy(4) EAS 115 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
* Id limited by maximum junction temperature

Thermal Characteristics

Characteristics Symbol MDP2N60 MDF2N60 Unit

(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 2.32 5.5

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 MDP2N60/MDF2N60 N-channel MOSFET 600V
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDP2N60TH -55~150oC TO-220 Tube Halogen Free
o
MDF2N60TH -55~150 C TO-220F Tube Halogen Free
o
MDP2N60TP -55~150 C TO-220 Tube Pb free
o
MDF2N60TP -55~150 C TO-220F Tube Pb free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 600 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 1.0A 3.6 4.5 Ω
Forward Transconductance gfs VDS = 30V, ID = 1.0A - 0.5 - S
Dynamic Characteristics
Total Gate Charge Qg - 6.7
(3)
Gate-Source Charge Qgs VDS = 480V, ID = 2.0A, VGS = 10V - 2.2 nC
Gate-Drain Charge Qgd - 2.5
Input Capacitance Ciss - 275 360
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 1.4 2 pF
Output Capacitance Coss - 32 40
Turn-On Delay Time td(on) - 10.6
Rise Time tr VGS = 10V, VDS = 300V, ID = 2.0A, - 29.6
ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 40.4
Fall Time tf - 38.4
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 4.6 - A
Source Diode Forward Current
Source-Drain Diode Forward
VSD IS = 2.0A, VGS = 0V - 1.4 V
Voltage
Body Diode Reverse Recovery
trr - 206 ns
Time
IF = 2.0A, dl/dt = 100A/µs(3)
Body Diode Reverse Recovery
Qrr - 0.76 µC
Charge

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤2.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=53mH, IAS=2.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,

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 MDP2N60/MDF2N60 N-channel MOSFET 600V
4 8
Vgs=5.5V
=6.0V
=6.5V 7
=7.0V
3 =8.0V
ID,Drain Current [A]

=10.0V 6 VGS=10.0V
=15.0V

RDS(ON) [Ω ]
2 Notes 5
1. 250㎲ Pulse Test
2. TC=25℃ VGS=20V

1
3

2
5 10 15 20 0 2 4 6

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : ※ Notes :
Drain-Source Breakdown Voltage

1. VGS = 10 V 1. VGS = 0 V
2.5 2. ID = 1.0A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

10

※ Notes :
10 1. VGS = 0 V
* Notes ; 2.250µs Pulse test
1. Vds=30V
Reverse Drain Current [A]
IDR
ID(A)

1 150℃ 25℃
150℃ 1

-55℃
25℃

0.1 0.1
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

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 MDP2N60/MDF2N60 N-channel MOSFET 600V
500
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 2.0A Coss = Cds + Cgd
120V
Crss = Cgd
300V
C oss
400
VGS, Gate-Source Voltage [V]

8
480V

C iss

Capacitance [pF]
6 300

4
200
※ Notes ;
1. VGS = 0 V
C rss 2. f = 1 MHz
2
100

0
0 2 4 6 8 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2 2
10 10
Operation in This Area
Operation in This Area
is Limited by R DS(on)
is Limited by R DS(on)

1 1
10 10
100 µs
ID, Drain Current [A]
ID, Drain Current [A]

100 µs
1 ms
10 ms 1 ms
10 ms
100 ms 0
100 ms
0
10 DC 10
DC

-1 -1
10 10

Single Pulse Single Pulse

TJ=Max rated TJ=Max rated
TC=25℃ TC=25℃
-2 -2
10 10
-1 0 1 2 -1 0 1 2
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Fig.10 Maximum Safe Operating Area

Fig.9 Maximum Safe Operating Area
MDF2N60 (TO-220F)
MDP2N60 (TO-220)

D=0.5
D=0.5
0
10
0
10 0.2
Thermal Response
Thermal Response

0.2
0.1
Zθ JC(t),
Zθ JC(t),

0.1 0.05
-1
10 -1
0.05 10 0.02

0.02 ※ Notes :
※ Notes :
0.01 Duty Factor, D=t1/t2
0.01 Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.32℃/W RΘ JC=5.5℃/W
single pulse single pulse
-2 -2
10 10
-5 -4 -3 -2 -1 0 1 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec] t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve Fig.12 Transient Thermal Response Curve
MDP2N60 (TO-220) MDF2N60 (TO-220F)

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 MDP2N60/MDF2N60 N-channel MOSFET 600V
7000 8000

single Pulse single Pulse

6000 RthJC = 2.32℃/W RthJC = 5.5℃/W
TC = 25℃ TC = 25℃
6000
5000
Power (W)

Power (W)
4000
4000
3000

2000
2000

1000

0 0
1E-5 1E-4 1E-3 0.01 0.1 1 10 1E-5 1E-4 1E-3 0.01 0.1 1 10

Pulse Width (s) Pulse Width (s)

Fig.13 Single Pulse Maximum Power Fig.14 Single Pulse Maximum Power
Dissipation MDP2N60 (TO-220) Dissipation MDF2N60 (TO-220F)

3
ID, Drain Current [A]

0
25 50 75 100 125 150

TC, Case Temperature [℃]

Fig.15 Maximum Drain Current vs. Case

Temperature

Mar. 2011 Version 1.4 5 MagnaChip Semiconductor Ltd.

 MDP2N60/MDF2N60 N-channel MOSFET 600V
Physical Dimensions

3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified

Mar. 2011 Version 1.4 6 MagnaChip Semiconductor Ltd.

 MDP2N60/MDF2N60 N-channel MOSFET 600V
Physical Dimensions

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

S y mbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55

Mar. 2011 Version 1.4 7 MagnaChip Semiconductor Ltd.

 MDP2N60/MDF2N60 N-channel MOSFET 600V
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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Mar. 2011 Version 1.4 8 MagnaChip Semiconductor Ltd.