FDP80N06 N-Channel MOSFET

September 2007

UniFETTM
FDP80N06 tm
N-Channel MOSFET
60V, 80A, 10mΩ
Features Description
• RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge(Typ. 57nC) stripe, DMOS technology.
• Low Crss(Typ. 145pF) This advanced technology has been especially tailored to
• Fast switching minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
• Improved dv/dt capability and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
• RoHS compliant
correction, electronic lamp ballast based on half bridge topology.

TO-220
G D S
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 60 V
VGSS Gate to Source Voltage ±20 V
-Continuous (TC = 25oC) 80
ID Drain Current A
-Continuous (TC = 100oC) 65
IDM Drain Current - Pulsed (Note 1) 320 A
EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ
IAR Avalanche Current (Note 1) 80 A
EAR Repetitive Avalanche Energy (Note 1) 17.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
(TC = 25oC) 176 W
PD Power Dissipation
- Derate above 25oC 1.17 W/oC
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose, oC
TL 300
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 0.85 o
C/W
RθJA Thermal Resistance, Junction to Ambient 62.5

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP80N06 Rev. A
 FDP80N06 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FDP80N06 FDP80N06 TO-220 - - 50

Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 60 - - V
∆BVDSS Breakdown Voltage Temperature o
ID = 250µA, Referenced to 25 C - 0.075 - V/oC
/ ∆TJ Coefficient
VDS = 60V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS = 48V, TC = 150oC - - 10
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 -- 4.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 40A - 8.5 10 mΩ
gFS Forward Transconductance VDS = 25V, ID = 40A (Note 4) - 67 - S

Dynamic Characteristics
Ciss Input Capacitance - 2450 3190 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 910 1190 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 145 190 pF

Switching Characteristics
td(on) Turn-On Delay Time - 32 75 ns
tr Turn-On Rise Time VDD = 30V, ID = 80A - 259 528 ns
td(off) Turn-Off Delay Time RG = 25Ω - 136 282 ns
tf Turn-Off Fall Time (Note 4, 5) - 113 236 ns
Qg(tot) Total Gate Charge at 10V VDS = 48V, ID = 80A - 57 74 nC
Qgs Gate to Source Gate Charge VGS = 10V - 15 - nC
Qgd Gate to Drain “Miller” Charge (Note 4, 5) - 24 - nC

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 80 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 320 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 80A - - 1.4 V
trr Reverse Recovery Time VGS = 0V, ISD = 80A - 64 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/µs (Note 4) - 127 - nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.15mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

2 www.fairchildsemi.com
FDP80N06 Rev. A
 FDP80N06 N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

400
VGS = 10.0 V 500 *Notes:
8.0 V 1. VDS = 20V
7.0 V 2. 250µs Pulse Test
100 6.5 V
6.0 V 100
ID,Drain Current[A]

ID,Drain Current[A]
5.5 V
5.0 V
o
o -55 C
10 175 C
o
10 25 C

*Notes:
1 1. 250µs Pulse Test
o
2. TC = 25 C
0.4 1
0.02 0.1 1 10 0 2 4 6 8 10
VDS,Drain-Source Voltage[V] VGS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.03 500
IS, Reverse Drain Current [A]
Drain-Source On-Resistance

100
o
175 C
0.02
RDS(ON) [Ω],

o
25 C

VGS = 10V
10
0.01
VGS = 20V
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C 2. 250µs Pulse Test
0.00 1
0 80 160 240 320 0.0 0.5 1.0 1.5 2.0
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000 10
Ciss Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 15V
VGS, Gate-Source Voltage [V]

Crss = Cgd VDS = 30V

8
4500 Coss
VDS = 48V
*Note:
Capacitances [pF]

1. VGS = 0V 6
2. f = 1MHz
3000
4
Crss

1500
2

*Note: ID = 80A
0 0
0.1 1 10 30 0 15 30 45 60
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

3 www.fairchildsemi.com
FDP80N06 Rev. A
 FDP80N06 N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
1.1 2.0
BVDSS, [Normalized]

RDS(on), [Normalized]
1.0 1.5

0.9 1.0
*Notes: *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 1mA 2. ID = 40A
0.8 0.5
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
1000 90
30µs

100µs 75
100
ID, Drain Current [A]

ID, Drain Current [A]

1ms
60
10 10ms

DC
Operation in This Area 45
is Limited by R DS(on)
1
30
*Notes:
0.1 o
1. TC = 25 C
o
15
2. TJ = 175 C
3. Single Pulse
0.01 0
1 10 80 25 50 75 100 125 150 175
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

2
1
Thermal Response [ZθJC]

0.5

0.2
0.1 0.1
PDM
0.05

0.02
t1
t2
0.01
0.01 *Notes:
Single pulse o
1. ZθJC(t) = 0.85 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Rectangular Pulse Duration [sec]

4 www.fairchildsemi.com
FDP80N06 Rev. A
 FDP80N06 N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com
FDP80N06 Rev. A
 FDP80N06 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

6 www.fairchildsemi.com
FDP80N06 Rev. A
 FDP80N06 N-Channel MOSFET
Mechanical Dimensions

TO-220

Dimensions in Millimeters

7 www.fairchildsemi.com
FDP80N06 Rev. A
 FDP80N06 N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx® Green FPS™ Power247® SuperSOT™-8
Build it Now™ Green FPS™ e-Series™ POWEREDGE® SyncFET™
CorePLUS™ GTO™ Power-SPM™ The Power Franchise®
CROSSVOLT™ i-Lo™ PowerTrench®
CTL™ IntelliMAX™ Programmable Active Droop™
Current Transfer Logic™ ISOPLANAR™ QFET® TinyBoost™
EcoSPARK® MegaBuck™ QS™ TinyBuck™
®
MICROCOUPLER™ QT Optoelectronics™ TinyLogic®
Fairchild® MicroFET™ Quiet Series™ TINYOPTO™
Fairchild Semiconductor® MicroPak™ RapidConfigure™ TinyPower™
FACT Quiet Series™ MillerDrive™ SMART START™ TinyPWM™
FACT® Motion-SPM™ SPM® TinyWire™
FAST® OPTOLOGIC® STEALTH™ µSerDes™
FastvCore™ OPTOPLANAR® SuperFET™ UHC®
FPS™ ® SuperSOT™-3 UniFET™
FRFET® PDP-SPM™ SuperSOT™-6 VCX™
Global Power ResourceSM Power220®

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably
support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or
properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product
Advance Information Formative or In Design
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.

Rev. I31

8 www.fairchildsemi.com
FDP80N06 Rev. A