FDP33N25 / FDPF33N25T 250V N-Channel MOSFET

October
TM
UniFET
FDP33N25 / FDPF33N25T
250V N-Channel MOSFET
Features Description
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect
• Low gate charge ( typical 36.8 nC) transistors are produced using Fairchild’s proprietary, planar
• Low Crss ( typical 39 pF) stripe, DMOS technology.
• Fast switching
This advanced technology has been especially tailored to
• Improved dv/dt capability
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

G
TO-220 GD S
TO-220F
G DS
FDP Series FDPF Series
S

Absolute Maximum Ratings

Symbol Parameter FDP33N25 FDPF33N25T Unit
VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25°C) 33 33* A
- Continuous (TC = 100°C) 20.4 20.4* A
IDM Drain Current - Pulsed (Note 1)
132 132* A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 918 mJ
IAR Avalanche Current (Note 1) 33 A
EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 235 37 W
- Derate above 25°C 1.89 0.29 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FDP33N25 FDPF33N25T Unit
RθJC Thermal Resistance, Junction-to-Case 0.53 3.4 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP33N25 FDP33N25 TO-220 - - 50
FDPF33N25T FDPF33N25T TO-220F - - 50

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C
/ ∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V -- -- 1 µA
VDS = 200V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 16.5A -- 0.077 0.094 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 16.5A (Note 4) -- 26.6 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 1640 2135 pF
Coss Output Capacitance f = 1.0MHz -- 330 430 pF
Crss Reverse Transfer Capacitance -- 39 59 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125V, ID = 33A -- 35 80 ns
RG = 25Ω
tr Turn-On Rise Time -- 230 470 ns
td(off) Turn-Off Delay Time -- 75 160 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 120 250 ns
Qg Total Gate Charge VDS = 200V, ID = 33A -- 36.8 48 nC
VGS = 10V
Qgs Gate-Source Charge -- 10 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 17 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 33A -- 220 -- ns
Qrr Reverse Recovery Charge dIF/dt =100A/µs (Note 4)
-- 1.71 -- µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 33A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

2 www.fairchildsemi.com
FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10
2 VGS 2
10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
ID, Drain Current [A]

6.0 V

ID, Drain Current [A]

Bottom : 5.5 V

1
10
1
10 o
150 C

o
25 C
o
-55 C
* Notes : * Notes :
0
10 1. 250µs Pulse Test 1. VDS = 40V
2. TC = 25 C
o 2. 250µs Pulse Test
0
-1 0 1
10
10 10 10 2 4 6 8 10 12

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

0.25
2
10
Drain-Source On-Resistance

0.20
IDR, Reverse Drain Current [A]

VGS = 10V
RDS(ON) [Ω],

0.15

1
10
o
0.10 150 C
o
25 C
VGS = 20V

0.05
* Notes :
1. VGS = 0V
o
* Note : TJ = 25 C 2. 250µs Pulse Test
0
0.00 10
0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

12
4000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 50V
Coss = Cds + Cgd 10
VDS = 125V
VGS, Gate-Source Voltage [V]

Crss = Cgd

3000 VDS = 200V

Coss 8
Capacitances [pF]

Ciss
6
2000

4
* Note :
1000 1. VGS = 0 V
Crss 2. f = 1 MHz 2

* Note : ID = 33A

0 0
10
-1
10
0
10
1
0 10 20 30 40

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0
* Notes :
0.9
1. VGS = 0 V
* Notes :
2. ID = 250 µA 0.5 1. VGS = 10 V
2. ID = 16.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FDP33N25 for FDPF33N25T

10
2 10 µs 10
2

10 µs
100 µs
1 ms 100 µs
ID, Drain Current [A]

ID, Drain Current [A]

10 ms 1 ms
1 1
10 100 ms 10
Operation in This Area DC 10 ms
is Limited by R DS(on)
100 ms
Operation in This Area DC
is Limited by R DS(on)
0 0
10 10
* Notes : * Notes :
o
1. TC = 25 C o
1. TC = 25 C
o
2. TJ = 150 C o
2. TJ = 150 C
3. Single Pulse 3. Single Pulse
-1 -1
10 10
0 1 2 0 1 2
10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current

vs. Case Temperature

40

30
ID, Drain Current [A]

20

10

0
25 50 75 100 125 150
o
TC, Case Temperature [ C]

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FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FDP33N25

0
10

D=0.5

ZθJC(t), Thermal Response 0.2

-1
10
0.1
PDM
0.05
t1
t2
0.02
0.01 * Notes :
-2 o
10 1. Z θJC(t) = 0.53 C/W Max.
single pulse 2. Duty Factor, D=t1/t2
3. T JM - T C = PDM * Z θJC(t)

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1, Square Wave Pulse Duration [sec]

Figure 11-2. Transient Thermal Response Curve for FDPF33N25T

D=0.5
0
10
ZθJC(t), Thermal Response

0.2

0.1
0.05 PDM
-1
10 0.02 t1
t2
0.01
* Notes :
o
1. Z θ JC (t) = 3.4 C/W Max.
2. Duty Factor, D=t1/t 2

single pulse 3. T JM - T C = P DM * Z θ JC (t)

-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1, Square W ave Pulse Duration [sec]

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FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

6 www.fairchildsemi.com
FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

7 www.fairchildsemi.com
FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Mechanical Dimensions

TO-220

Dimensions in Millimeters

8 www.fairchildsemi.com
FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
Package Dimensions

TO-220F Potted

* Front/Back Side Isolation Voltage : AC 2500V

Dimensions in Millimeters
Dimensions in Millimeters

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FDP33N25 / FDPF33N25T Rev. B
 FDP33N25 / FDPF33N25T 250V N-Channel MOSFET
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Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Rev. I41

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FDP33N25 / FDPF33N25T Rev. B