FQA28N15 150V N-Channel MOSFET

April 2011

QFET TM

FQA28N15
150V N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect • 33A, 150V, RDS(on) = 0.09Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC)
planar stripe, DMOS technology. • Low Crss ( typical 50 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating
suited for low voltage applications such as audio amplifire,
high efficiency switching for DC/DC converters, and DC
motor control, uninterrupted power supply.

D
{

 
G{ z
z

TO-3PN {
G DS S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQA28N15 Units

VDSS Drain-Source Voltage 150 V
ID Drain Current - Continuous (TC = 25°C) 33 A
- Continuous (TC = 100°C) 23.3 A
IDM Drain Current - Pulsed (Note 1) 132 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ
IAR Avalanche Current (Note 1) 33 A
EAR Repetitive Avalanche Energy (Note 1) 22.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C) 227 W
- Derate above 25°C 1.52 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 0.66 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA28N15 Rev. A1
 FQA28N15 150V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQA28N15 FQA28N15 TO-3PN - - 30

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 150 -- -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25°C -- 0.17 -- V/°C
/ ΔTJ Coefficient
IDSS VDS = 150 V, VGS = 0 V -- -- 1 μA
Zero Gate Voltage Drain Current
VDS = 120 V, TC = 150°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 16.5 A -- 0.067 0.09 Ω
gFS Forward Transconductance VDS = 40 V, ID = 16.5 A -- 20 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1250 1600 pF
Coss Output Capacitance f = 1.0 MHz -- 260 340 pF
Crss Reverse Transfer Capacitance (Note 4) -- 50 65 pF

Switching Characteristics
td(on) Turn-On Delay Time VDD = 75 V, ID = 28 A, -- 17 45 ns
tr Turn-On Rise Time RG = 25 Ω -- 180 370 ns
td(off) Turn-Off Delay Time -- 100 210 ns
tf Turn-Off Fall Time (Note 4,5) -- 115 240 ns
Qg Total Gate Charge VDS = 120 V, ID = 28 A, -- 40 52 nC
Qgs Gate-Source Charge VGS = 10 V -- 7.9 -- nC
Qgd Gate-Drain Charge (Note 4,5) -- 20 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 33 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 28 A, -- 100 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/μs (Note 4) -- 0.4 -- μC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.46mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 28A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

FQA28N15 Rev. A1 2 www.fairchildsemi.com

 FQA28N15 150V N-Channel MOSFET
Typical Characteristics

2
2 VGS 10
10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
ID, Drain Current [A]

ID, Drain Current [A]

5.5 V 1
5.0 V 10
1
Bottom : 4.5 V 175∩
10

0
25∩
10

∝ Notes : -55∩ ∝ Notes :

0 1. 250レs Pulse Test 1. VDS = 40V
10 2. TC = 25∩ 2. 250レs Pulse Test

-1
10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

300
2
10
Drain-Source On-Resistance

VGS = 10V
240
IDR, Reverse Drain Current [A]
RDS(ON) [mヘ ],

VGS = 20V 1
10
180

120
0
10

60 ∝ Notes :
175∩ 25∩ 1. VGS = 0V
∝ Note : TJ = 25∩
2. 250レs Pulse Test

0 -1
10
0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID , Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

3000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500 10 VDS = 30V
VGS, Gate-Source Voltage [V]

VDS = 75V
Ciss
2000 8 VDS = 120V
Capacitance [pF]

Coss
1500 6

1000 4
Crss ∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
500 2

∝ Note : ID = 28 A

0 0
10
-1
10
0
10
1 0 9 18 27 36 45

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FQA28N15 Rev. A1 3 www.fairchildsemi.com

 FQA28N15 150V N-Channel MOSFET
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ∝ Notes :
1. VGS = 0 V ∝ Notes :
2. ID = 250 レA 0.5
1. VGS = 10 V
2. ID = 14 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

35
Operation in This Area
is Limited by R DS(on)
30
2
10
100 μs 25
ID, Drain Current [A]

ID, Drain Current [A]

1 ms
10 ms 20
1 DC
10

15

0 10
10 ∝ Notes :
o
1. TC = 25 C
o 5
2. TJ = 175 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 25 50 75 100 125 150 175

VDS, Drain-Source Voltage [V] TC, Case Temperature [∩ ]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

0
10
Zヨ JC(t), Thermal Response

D = 0 .5

∝ N o te s :
0 .2
1 . Z ヨ J C ( t) = 0 .6 6 ∩ /W M a x .
-1
10 2 . D u ty F a c t o r , D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z ヨ J C ( t)

0 .0 5
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

FQA28N15 Rev. A1 4 www.fairchildsemi.com

 FQA28N15 150V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

FQA28N15 Rev. A1 5 www.fairchildsemi.com

 FQA28N15 150V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FQA28N15 Rev. A1 6 www.fairchildsemi.com

 FQA28N15 150V N-Channel MOSFET
Package Dimensions

TO-3PN

Dimensions in Millimeters

FQA28N15 Rev. A1 7 www.fairchildsemi.com

 FQA28N15 150V N-Channel MOSFET
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Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

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make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I53

8 www.fairchildsemi.com
FQA28N15 Rev. A1