FQD7P06 P-Channel QFET® MOSFET

April 2013

FQD7P06
P-Channel QFET® MOSFET
- 60 V, - 5.4 A, 450 m

Description Features
This P-Channel enhancement mode power MOSFET is • - 5.4 A, - 60 V, RDS(on) = 450 m (Max.) @ VGS = - 10 V,
produced using Fairchild Semiconductor®’s proprietary ID = - 2.7 A
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce • Low Gate Charge (Typ. 6.3 nC)
on-state resistance, and to provide superior switching • Low Crss (Typ. 25 pF)
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, • 100% Avalanche Tested
audio amplifier, DC motor control, and variable switching
power applications.
S

D

G
●
●

▶ ▲
G ●

S D-PAK

D

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQD7P06 Unit

VDSS Drain-Source Voltage -60 V
ID Drain Current - Continuous (TC = 25°C) -5.4 A
- Continuous (TC = 100°C) -3.42 A
IDM Drain Current - Pulsed (Note 1) -21.6 A
VGSS Gate-Source Voltage  25 V
EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ
IAR Avalanche Current (Note 1) -5.4 A
EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 28 W
- Derate above 25°C 0.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter FQD7P06 Unit
RJC Thermal Resistance, Junction-to-Case, Max. 4.5 °C/W
RJA Thermal Resistance, Junction-to-Ambient * 50 °C/W
RJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)

©2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQD7P06 Rev. C0
 FQD7P06 P-Channel QFET® MOSFET
Elerical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit


Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -60 -- -- V
BVDSS Breakdown Voltage Temperature
ID = -250 A, Referenced to 25°C -- -0.07 -- V/°C
/ TJ Coefficient
IDSS VDS = -60 V, VGS = 0 V -- -- -1 A
Zero Gate Voltage Drain Current
VDS = -48 V, TC = 125°C -- -- -10 A
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V
RDS(on) Static Drain-Source
VGS = -10 V, ID = -2.7 A -- 0.36 0.451 
On-Resistance
gFS Forward Transconductance VDS = -30 V, ID = -2.7 A -- 3.8 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V, -- 225 295 pF
Coss Output Capacitance f = 1.0 MHz -- 110 145 pF
Crss Reverse Transfer Capacitance -- 25 32 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 7 25 ns
VDD = -30 V, ID = -3.5 A,
tr Turn-On Rise Time -- 50 110 ns
RG = 25 
td(off) Turn-Off Delay Time -- 7.5 25 ns
tf Turn-Off Fall Time (Note 4) -- 25 60 ns
Qg Total Gate Charge VDS = -48 V, ID = -7.0 A, -- 6.3 8.2 nC
Qgs Gate-Source Charge VGS = -10 V -- 1.6 -- nC
Qgd Gate-Drain Charge (Note 4) -- 3.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- -5.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -21.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -5.4 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -7.0 A, -- 77 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s -- 0.23 -- C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.6mH, IAS = -5.4A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD ≤ -7.0A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQD7P06 Rev. C0
 FQD7P06 P-Channel QFET® MOSFET
Typical Characteristics
VGS
Top : - 15.0 V
1
10 - 10.0 V 1
10
- 8.0 V
- 7.0 V
- 6.0 V

-ID , Drain Current [A]

-ID, Drain Current [A]

- 5.5 V
- 5.0 V
Bottom : - 4.5 V
0
150℃
10
0
10

25℃

※ Notes : -55℃ ※ Notes :

-1
1. 250μ s Pulse Test 1. VDS = -30V
10 2. TC = 25℃ 2. 250μ s Pulse Test

-1
10
10
-1
10
0
10
1 2 4 6 8 10

-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.4

1.2
Drain-Source On-Resistance

1
10
-IDR , Reverse Drain Current [A]

1.0
VGS = - 10V
RDS(on) [],

0.8
VGS = - 20V
0.6 10
0

0.4
150℃ 25℃
※ Notes :
0.2 1. VGS = 0V
※ Note : TJ = 25℃
2. 250μ s Pulse Test

0.0 -1
10
0 4 8 12 16 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

600 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
500 10
-VGS, Gate-Source Voltage [V]

VDS = -30V
Coss
400 8 VDS = -48V
Capacitance [pF]

Ciss ※ Notes :
1. VGS = 0 V
300 2. f = 1 MHz 6

200 4
Crss

100 2
※ Note : ID = -7.0 A

0 0
10
-1
10
0
10
1 0 1 2 3 4 5 6 7

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2001 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQD7P06 Rev. C0
 FQD7P06 P-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
-BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
1.5

1.0

1.0

0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = -250 μA 1. VGS = -10 V
2. ID = -2.7 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

6
Operation in This Area
is Limited by R DS(on)
5
100 s
-ID, Drain Current [A]

-ID, Drain Current [A]

1
10 4
1 ms

10 ms
3
DC

0
10 2

※ Notes :
o
1. TC = 25 C 1
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1 2
10 25 50 75 100 125 150

-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

D = 0 .5
Zθ JC(t), Thermal Response

0
10 0 .2 ※ N o te s :
1 . Z θ J C ( t) = 4 .5 ℃ /W M a x .
0 .1 2 . D u ty F a c t o r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 5

0 .0 2
PDM
10
-1 0 .0 1
t1
s in g le p u ls e
t2

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

©2001 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQD7P06 Rev. C0
 FQD7P06 P-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF -10V
VDS
VGS Qgs Qgd

DUT
-3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL
VDS t on t off
td(on) tr td(off)
VGS VDD tf

RG VGS
10%

-10V DUT

90%
VDS

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
tp Time
ID

RG VDD VDS (t)

VDD
ID (t)
-10V DUT
IAS
tp BVDSS

©2001 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQD7P06 Rev. C0
 FQD7P06 P-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

VDS

DUT _

I SD
L

Driver
RG
Compliment of DUT
(N-Channel) VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

Body Diode Reverse Current

I SD
( DUT ) IRM

di/dt

IFM , Body Diode Forward Current

VDS VSD
( DUT )

Body Diode VDD

Forward Voltage Drop

Body Diode Recovery dv/dt

©2001 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQD7P06 Rev. C0
 FQD7P06 P-Channel QFET® MOSFET
Package Dimensions

DPAK

©2001 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQD7P06 Rev. C0
 FQD7P06 P-Channel QFET® MOSFET
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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

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Semiconductor. The datasheet is for reference information only.
Rev. I64
©2001 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FQD7P06 Rev. C0
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