MDF7N60B
MDF7N60B
MDF7N60B
MDP7N60B / MDF7N60B
N-Channel MOSFET 600V, 7.0A, 1.15
These devices are suitable device for SMPS, high Speed Applications
switching and general purpose applications.
Power Supply
PFC
High Current, High Speed Switching
G
TO-220 TO-220F
MDP Series MDF Series
S
Thermal Characteristics
Characteristics Symbol MDP7N60B MDF7N60B Unit
(1)
Thermal Resistance, Junction-to-Ambient RJA 62.5 62.5 o
C/W
Thermal Resistance, Junction-to-Case(1) RJC 0.95 3.01
Note :
1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C.
3. ISD 7.0A, di/dt200A/us, VDD=50V, Rg =25, Starting TJ=25C
4. L=8.2mH, IAS=7.0A, VDD=50V, Rg =25, Starting TJ=25C,
=8.0V 1.8
=10.0V VGS=10.0V
RDS(ON) [ ]
8 =15.0V
1.6 VGS=20V
6
1.4
4
Notes 1.2
2 1. 250 Pulse Test
2. TC=25
0 1.0
0 5 10 15 20 25 0 3 6 9 12 15
3.0 1.2
Notes : Notes :
Drain-Source Breakdown Voltage
1. VGS = 10 V 1. VGS = 0 V
2.5 2. ID = 250
2. ID = 3.5A
Drain-Source On-Resistance
1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)
2.0
1.5 1.0
1.0
0.9
0.5
0.0 0.8
-50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
* Notes ; Notes :
1. VGS = 0 V
1. Vds=30V 10 2.250s Pulse test
10
Reverse Drain Current [A]
-55
IDR
ID(A)
150 150 25
1 1
25
0.1 0.1
2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
8 300V
1100
480V C iss
1000
Capacitance [pF]
6 900
800
700
4
600
Notes ;
500
C rss 1. VGS = 0 V
2 400 2. f = 1 MHz
300
200
0 100
0
0 2 4 6 8 10 12 14 16 18 20 22 1 10
2 2
10 10
Operation in This Area Operation in This Area
is Limited by R DS(on) 10 s is Limited by R DS(on) 10 s
100 s
1
10
1 100 s
10
1 ms 1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10 ms
10 ms
100 ms 1s 100 ms
DC
0 0
10 10 DC
-1 -1
10 10
0
10
D=0.5
D=0.5
0
10
0.2
Thermal Response
0.2
Thermal Response
0.1 0.1
Z JC(t),
Z JC(t),
-1
10
0.05
0.05
-1
10 0.02
0.02 0.01
Notes : Notes :
0.01 Duty Factor, D=t1/t2 Duty Factor, D=t1/t2
PEAK TJ = PDM * Z JC* R JC(t) + TC PEAK TJ = PDM * Z JC* R JC(t) + TC
R JC=0.95/W R JC=3.01/W
single pulse single pulse
-2 -2
10 10
-5 -4 -3 -2 -1 0 1 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec] t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve Fig.12 Transient Thermal Response Curve
MDP7N60B(TO-220) MDF7N60B(TO-220F)
9000
Power (W)
Power (W)
8000
6000
6000
4000
3000
2000
0 0
1E-5 1E-4 1E-3 0.01 0.1 1 10 1E-5 1E-4 1E-3 0.01 0.1 1 10
Fig.13 Single Pulse Maximum Power Fig.14 Single Pulse Maximum Power
Dissipation MDP7N60B(TO-220) Dissipation MDF7N60B(TO-220F)
6
ID, Drain Current [A]
0
25 50 75 100 125 150
3 Leads, TO-220
3 Leads, TO-220F
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.