FDL100N50F N-Channel MOSFET

May 2009
UniFETTM
FDL100N50F
N-Channel MOSFET,FRFET
500V, 100A, 0.055
Features Description
RDS(on) = 0.043 ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect
transistors are produced using Fairchilds proprietary, planar
Low gate charge ( Typ. 238nC) stripe, DMOS technology.
Low Crss ( Typ. 64pF) This advanced technology has been especially tailored to
Fast switching minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
100% avalanche tested and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
Improved dv/dt capability
correction.
RoHS Compliant

TO-264
G D S FDL Series
S

MOSFET Maximum Ratings TC = 25 C unless otherwise noted o

Symbol Parameter FDL100N50F Units

VDSS Drain to Source Voltage 500 V
VGSS Gate to Source Voltage 30 V
-Continuous (TC = 25oC) 100
ID Drain Current A
-Continuous (TC = 100oC) 60
IDM Drain Current - Pulsed (Note 1) 400 A
EAS Single Pulsed Avalanche Energy (Note 2) 5000 mJ
IAR Avalanche Current (Note 1) 100 A
EAR Repetitive Avalanche Energy (Note 1) 73.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
(TC = 25oC) 2500 W
PD Power Dissipation
- Derate above 25oC 20 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8 from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter Min. Max. Units
RJC Thermal Resistance, Junction to Case - 0.05
o
RCS Thermal Resistance, Case to Sink Typ. 0.1 - C/W
RJA Thermal Resistance, Junction to Ambient - 30

2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDL100N50F Rev. A
 FDL100N50F N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDL100N50F FDL100N50F TO-264 - - 30

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25oC 500 - - V
BVDSS Breakdown Voltage Temperature
ID = 250A, Referenced to 25oC - 0.5 - V/oC
TJ Coefficient
VDS = 500V, VGS = 0V - - 10
IDSS Zero Gate Voltage Drain Current A
VDS = 400V, TC = 125oC - - 100
IGSS Gate to Body Leakage Current VGS = 30V, VDS = 0V - - 100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 50A - 0.043 0.055
gFS Forward Transconductance VDS = 20V, ID = 50A (Note 4) - 95 - S

Dynamic Characteristics
Ciss Input Capacitance - 12000 - pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 1700 - pF
f = 1MHz
Crss Reverse Transfer Capacitance - 64 - pF
Qg(tot) Total Gate Charge at 10V - 238 - nC
VDD = 400V, ID = 50A
Qgs Gate to Source Gate Charge - 74 - nC
VGS = 10V
Qgd Gate to Drain Miller Charge - 95 - nC

Switching Characteristics
td(on) Turn-On Delay Time - 63 - ns
tr Turn-On Rise Time VDD = 250V, ID = 50A - 186 - ns
RG = 4.7
td(off) Turn-Off Delay Time - 202 - ns
tf Turn-Off Fall Time - 105 - ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 100 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 400 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.5 V
trr Reverse Recovery Time VGS = 0V, ISD = 100A - 250 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/s - 1.5 - nC

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 100A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 100A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

FDL100N50F Rev. A 2 www.fairchildsemi.com

 FDL100N50F N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

300 400
VGS = 15.0 V
10.0 V
100 8.0 V
7.0 V 100
6.5 V
ID, Drain Current[A]

ID, Drain Current[A]

6.0 V
o
150 C
o
25 C
10
10
o
-55 C

*Notes: *Notes:
1. 250s Pulse Test 1. VDS = 20V
1 o
2. TC = 25 C 2. 250s Pulse Test
0.5 1
0.1 1 10 4 6 8 10
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.07 300

100
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

0.06 o
150 C
RDS(ON) [],

VGS = 10V
0.05
o
25 C
VGS = 20V 10

0.04
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C 2. 250s Pulse Test
0.03 1
0 50 100 150 200 250 0.0 0.5 1.0 1.5
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

30000 10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 100V
VGS, Gate-Source Voltage [V]

25000 Crss = Cgd VDS = 250V

Coss 8 VDS = 400V

20000 *Note:
Capacitances [pF]

1. VGS = 0V 6
2. f = 1MHz
15000 Ciss
4
10000
Crss
2
5000

*Note: ID = 50A
0 0
10
-1
1 10 30 0 50 100 150 200 250
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FDL100N50F Rev. A 3 www.fairchildsemi.com

 FDL100N50F N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, [Normalized]

RDS(on), [Normalized]
2.0

1.0 1.5

1.0
0.9
*Notes: *Notes:
0.5
1. VGS = 0V 1. VGS = 10V
2. ID = 1mA 2. ID = 50A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
1000 120
30s
100s
100
100 1ms
ID, Drain Current [A]

10ms
DC
ID, Drain Current [A]

80
10
60
Operation in This Area
1 is Limited by R DS(on)
40
*Notes:
o
0.1 1. TC = 25 C
20
o
2. TJ = 150 C
3. Single Pulse
0.01 0
1 10 100 1000 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

0.1
Thermal Response [ZJC]

0.5

0.01 0.2

0.1
PDM
0.05
t1
0.02 t2
0.001 0.01 *Notes:
Single pulse o
1. ZJC(t) = 0.05 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.0001
-5 -4 -3 -2 -1
10 10 10 10 10 1
Rectangular Pulse Duration [sec]

FDL100N50F Rev. A 4 www.fairchildsemi.com

 FDL100N50F N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDL100N50F Rev. A 5 www.fairchildsemi.com

 FDL100N50F N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

V DS

I SD
L

D r iv e r
R G
S am e T ype
as DUT V DD

V GS d v / d t c o n t r o lle d b y R G
I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id t h
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )

I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t

V SD V DD

B o d y D io d e
F o r w a r d V o lta g e D r o p

FDL100N50F Rev. A 6 www.fairchildsemi.com

 FDL100N50F N-Channel MOSFET
Mechanical Dimensions

Dimensions in Millimeters

FDL100N50F Rev. A 7 www.fairchildsemi.com

 FDL100N50F MOSFET
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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I40

FDL100N50F Rev. A 8 www.fairchildsemi.com