FCP260N60E / FCPF260N60E N-Channel MOSFET

August 2012

SuperFET II
FCP260N60E / FCPF260N60E
600V N-Channel MOSFET
Features Description

650V @TJ = 150C SuperFET II is, Fairchilds proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
Max. RDS(on) = 260m
balance mechanism for outstanding low on-resistance and lower
Ultra Low Gate Charge (Typ. Qg = 48nC) gate charge performance.
Low Effective Output Capacitance (Typ. Coss.eff = 129pF) This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
100% Avalanche Tested
withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET II is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.

G
TO-220 GD S
TO-220F
G D S

S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol Parameter FCP260N60E FCPF260N60E Units
VDSS Drain to Source Voltage 600 V
- DC 20 V
VGSS Gate to Source Voltage
- AC (f > 1Hz) 30 V
-Continuous (TC = 25oC) 15 15*
ID Drain Current A
-Continuous (TC = 100oC) 9.5 9.5*
IDM Drain Current - Pulsed (Note 1) 45 45* A
EAS Single Pulsed Avalanche Energy (Note 2) 292.5 mJ
IAR Avalanche Current (Note 1) 3.0 A
EAR Repetitive Avalanche Energy (Note 1) 1.56 mJ
Peak Diode Recovery dv/dt (Note 3) 20
dv/dt V/ns
MOSFET dv/dt 100
(TC = 25oC) 156 36 W
PD Power Dissipation
- Derate above 25oC 1.25 0.29 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8 from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter FCP260N60E FCPF260N60E Units
RJC Thermal Resistance, Junction to Case 0.8 3.5
RCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 oC/W

RJA Thermal Resistance, Junction to Ambient 62.5 62.5

2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCP260N60E / FCPF260N60E Rev. C0
 FCP260N60E / FCPF260N60E N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP260N60E FCP260N60E TO-220 - - 50
FCPF260N60E FCPF260N60E TO-220F - - 50

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
VGS = 0V, ID = 10mA, TJ = 25C 600 - - V
BVDSS Drain to Source Breakdown Voltage
VGS = 0V, ID = 10mA, TJ = 150C 650 - - V
BVDSS Breakdown Voltage Temperature
ID = 10mA, Referenced to 25oC - 0.67 - V/oC
TJ Coefficient
BVDS Drain-Source Avalanche Breakdown
VGS = 0V, ID = 15A - 700 - V
Voltage
VDS = 480V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current A
VDS = 480V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = 20V, VDS = 0V - - 100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A 2.5 - 3.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 7.5A - 0.22 0.26
gFS Forward Transconductance VDS = 20V, ID = 7.5A - 15.5 - S

Dynamic Characteristics
Ciss Input Capacitance - 1880 2500 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 1330 1770 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 85 130 pF
Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz - 32 - pF
Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 129 - pF
Qg(tot) Total Gate Charge at 10V - 48 62 nC
Qgs Gate to Source Gate Charge VDS = 380V, ID = 7.5A - 7.4 - nC
VGS = 10V
Qgd Gate to Drain Miller Charge (Note 4) - 17 - nC
ESR Equivalent Series Resistance Drain open - 5.8 -

Switching Characteristics
td(on) Turn-On Delay Time - 20 50 ns
tr Turn-On Rise Time VDD = 380V, ID = 7.5A - 11 32 ns
td(off) Turn-Off Delay Time VGS = 10V, RG = 4.7 - 89 188 ns
tf Turn-Off Fall Time (Note 4) - 13 36 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 45 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 7.5A - - 1.2 V
trr Reverse Recovery Time VGS = 0V, ISD = 7.5A - 270 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/s - 3.6 - C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 7.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

FCP260N60E / FCPF260N60E Rev. C0 2 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 100
VGS = 20.0V
10.0V
8.0V
7.0V

ID, Drain Current[A]

6.0V
ID, Drain Current[A]

10 5.0V 10
o
4.5V 150 C

o
25 C

1 1
o
-55 C
*Notes: *Notes:
1. 250s Pulse Test 1. VDS = 20V
o
2. TC = 25 C 2. 250s Pulse Test
0.1 0.1
0.1 1 10 20 2 4 6 8 10
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.6 100
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

0.5
RDS(ON) [],

o
150 C
0.4 10 o
25 C
VGS = 10V

0.3
VGS = 20V *Notes:
1. VGS = 0V

*Note: TC = 25 C
o 2. 250s Pulse Test
0.2 1
0 10 20 30 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000 10

VDS = 120V
VGS, Gate-Source Voltage [V]

Ciss
8 VDS = 300V
1000 VDS = 480V
Capacitances [pF]

6
100
Coss

*Note:
4
1. VGS = 0V
10
2. f = 1MHz
2
Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
1 Crss = Cgd *Note: ID = 7.5A
0.5 0
0.1 1 10 100 600 0 10 20 30 40 50
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FCP260N60E / FCPF260N60E Rev. C0 3 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.12 2.8
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
1.08 2.4

RDS(on), [Normalized]
BVDSS, [Normalized]

1.04 2.0

1.00 1.6

0.96 1.2

*Notes: *Notes:
0.92 0.8
1. VGS = 0V 1. VGS = 10V
2. ID = 10mA 2. ID = 7.5A
0.88 0.4
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
vs. Case Temperature - FCP260N60E vs. Case Temperature - FCPF260N60E
100 100

10s
ID, Drain Current [A]

ID, Drain Current [A]

100s 10 10s
10 100s
1ms
1ms
10ms 10ms
DC
1
Operation in This Area
Operation in This Area is Limited by R DS(on)
1 is Limited by R DS(on) DC
*Notes:
*Notes: o
0.1 1. TC = 25 C
o
1. TC = 25 C o
2. TJ = 150 C
o
2. TJ = 150 C 3. Single Pulse
3. Single Pulse
0.1 0.01
0.1 1 10 100 1000 0.1 1 10 100 1000
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 11. Maximum Drain Current Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
16 8

12 6
ID, Drain Current [A]

EOSS, [J]

8 4

4 2

0 0
25 50 75 100 125 150 0 100 200 300 400 500 600
o VDS, Drain to Source Voltage [V]
TC, Case Temperature [ C]

FCP260N60E / FCPF260N60E Rev. C0 4 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 13. Transient Thermal Response Curve - FCP260N60E

1
Thermal Response [ZJC]
0.5

0.2 PDM
0.1 0.1 t1
0.05 t2
*Notes:
0.02
o
0.01 1. ZJC(t) = 0.8 C/W Max.
Single pulse 2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1
Rectangular Pulse Duration [sec]

Figure 14. Transient Thermal Response Curve - FCPF260N60E

5
Thermal Response [ZJC]

0.5

1 0.2

0.1 PDM
0.05
t1
0.02 t2
0.01 *Notes:
Single pulse o
1. ZJC(t) = 3.5 C/W Max.
0.1 2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.05
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 100
Rectangular Pulse Duration [sec]

FCP260N60E / FCPF260N60E Rev. C0 5 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FCP260N60E / FCPF260N60E Rev. C0 6 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG

ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FCP260N60E / FCPF260N60E Rev. C0 7 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
Mechanical Dimensions

TO-220AB

FCP260N60E / FCPF260N60E Rev. C0 8 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
Package Dimensions

TO-220F (Retractable)

* Front/Back Side Isolation Voltage : AC 2500V

Dimensions in Millimeters

FCP260N60E / FCPF260N60E Rev. C0 9 www.fairchildsemi.com

 FCP260N60E / FCPF260N60E N-Channel MOSFET
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Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

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Semiconductor. The datasheet is for reference information only.
Rev. I61

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FCP260N60E / FCPF260N60E Rev. C0 10