FDA70N20 200V N-Channel MOSFET

UniFET TM

FDA70N20
200V N-Channel MOSFET

Features Description
• 70A, 200V, RDS(on) = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
• Low gate charge ( typical 66 nC) tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low Crss ( typical 89 pF)
• Fast switching This advanced technology has been especially tailored to mini-
• 100% avalanche tested mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
• Improved dv/dt capability
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.

D
{

 
G{ z
z

{
TO-3P S
G DS FDA Series

Absolute Maximum Ratings

Symbol Parameter FDA70N20 Unit
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C) 70 A
- Continuous (TC = 100°C) 45 A
IDM Drain Current - Pulsed (Note 1) 280 A
VGSS Gate-Source voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1742 mJ
IAR Avalanche Current (Note 1) 70 A
EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 417 W
- Derate above 25°C 3.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Min. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.3 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA70N20 Rev. A
 FDA70N20 200V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDA70N20 FDA70N20 TO-3P - - 30

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 200 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25°C -- 0.2 -- V/°C
/ ∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V -- -- 1 µA
VDS = 160V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 35A -- 0.029 0.035 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 35A (Note 4) -- 47 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 3050 3970 pF
Coss Output Capacitance f = 1.0MHz -- 750 980 pF
Crss Reverse Transfer Capacitance -- 89 130 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 100V, ID = 70A -- 71 150 ns
RG = 25Ω
tr Turn-On Rise Time -- 235 480 ns
td(off) Turn-Off Delay Time -- 65 140 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 39 88 ns
Qg Total Gate Charge VDS = 160V, ID = 70A -- 66 86 nC
VGS = 10V
Qgs Gate-Source Charge -- 19 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 26 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 70 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 280 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 70A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 70A -- 175 -- ns
dIF/dt =100A/µs (Note 4)
Qrr Reverse Recovery Charge -- 4.1 -- µC

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.533mH, IAS = 70A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 70A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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FDA70N20 Rev. A
 FDA70N20 200V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
2 10.0 V
10 2
8.0 V 10
7.0 V
6.5 V
ID, Drain Current [A]

ID, Drain Current [A]

Bottom : 6.0 V

o
150 C
1
10
1 o
10 25 C
o
-55 C

※ Notes : ※ Notes :
0 1. 250µ s Pulse Test 1. VDS = 40V
10
2. TC = 25℃ 2. 250µ s Pulse Test
0
-1 0 1
10
10 10 10 2 4 6 8 10 12

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.06
RDS(ON) [Ω ],Drain-Source On-Resistance

2
10
IDR, Reverse Drain Current [A]

0.05

VGS = 10V

0.04 1
10 150℃
25℃
VGS = 20V

※ Notes :
0.03 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µ s Pulse Test
0
10
0 25 50 75 100 125 150 175 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
VDS = 40V
VGS, Gate-Source Voltage [V]

6000 Coss VDS = 100V

Capacitances [pF]

8 VDS = 160V
Ciss
4000 6

4
※ Note ;
2000 1. VGS = 0 V
Crss 2. f = 1 MHz
2

※ Note : ID = 70A

0 0
10
-1
10
0
10
1
0 10 20 30 40 50 60 70

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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FDA70N20 Rev. A
 FDA70N20 200V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ? Notes :
2. ID = 250 µ A 0.5 1. VGS = 10 V
2. ID = 35 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature
3
10 80

10 µs 70
10
2
100 µs
1 ms 60
ID, Drain Current [A]
ID, Drain Current [A]

10 ms
100 ms 50
10
1
DC

Operation in This Area 40

is Limited by R DS(on)
0
10
30

? Notes :
o
1. TC = 25 C 20
-1
10 o
2. TJ = 150 C
3. Single Pulse 10

-2
10 0
0 1 2
10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 11. Transient Thermal Response Curve

D = 0 .5
Zθ JC(t), Thermal Response

-1
10
0 .2
PDM
0 .1 t1
t2
0 .0 5
※ N o te s :
1 . Z θ J C( t) = 0 .3 ℃ /W M a x .
0 .0 2
2 . D u ty F a c to r , D = t 1 /t 2
-2
10 0 .0 1 3 . T J M - T C = P D M * Z θ J C( t)
s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]

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FDA70N20 Rev. A
 FDA70N20 200V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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FDA70N20 Rev. A
 FDA70N20 200V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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FDA70N20 Rev. A
 FDA70N20 200V N-Channel MOSFET
Mechanical Dimensions (Continued)

TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

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FDA70N20 Rev. A
 FDA70N20 200V N-Channel MOSFET
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can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I14

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FDA70N20 Rev. A