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1.MOSFET Introduction 2.physical Operation 3.layout Introduction

The document summarizes key aspects of MOSFETs. It introduces the four terminals of MOSFETs and describes the two types, NMOS and PMOS. It then explains the physical operation of an NMOS transistor, describing how it is turned on and off by the gate-source voltage and goes from weak inversion to strong inversion. Finally, it provides an overview of MOSFET layout, showing examples of an inverter and NAND gate layout as well as principles of floorplanning.

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Nguyen Hung
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Download as PPTX, PDF, TXT or read online on Scribd
158 views

1.MOSFET Introduction 2.physical Operation 3.layout Introduction

The document summarizes key aspects of MOSFETs. It introduces the four terminals of MOSFETs and describes the two types, NMOS and PMOS. It then explains the physical operation of an NMOS transistor, describing how it is turned on and off by the gate-source voltage and goes from weak inversion to strong inversion. Finally, it provides an overview of MOSFET layout, showing examples of an inverter and NAND gate layout as well as principles of floorplanning.

Uploaded by

Nguyen Hung
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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1.

MOSFET introduction
2.Physical operation
3.Layout introduction
1.MOSFET introduction
The metal-oxide-semiconductor field- effect transistor (MOSFET) is a type of transistor used for
amplifying or switching electronic signals. And it has four terminals as follow :

S : source
G :gate
D :drain
B : body (well or substrate) or bulk
 There are two kind of MOSFET : NMOS and PMOS.

 The gate is separated from the n channel by a layer of insulating silicon dioxide (the O
in MOSFET, for oxide). Therefore, it does not make electrical contact with the rest of
the semiconducting material.
 The source is so named because it is the source of the charge carriers (electrons for nchannel,
holes for p-channel) that flow through the channel. Similarly, the drain is
where the charge carriers leave the channel
2. Physical operation ( for NMOS)

 when 𝑉𝐺𝑆 < 0 mobile holes from the substrate are attracted (or accumulated) under the
gate oxide. Therefore, there is no current. The transistor is OFF.
 When 𝑉𝑡ℎ > 𝑉𝐺𝑆 , it is not positive enough to
attract a large number of electrons, the
surface under the gate is said to be nearly
depleted (depleted of free electrons and
holes).

 In reality, there is still a current with very small


value and it is called subthreshold current.
The NMOS operated in this region is said to be
in weak inversion or the subthreshold region.
 When 𝑉𝐺𝑆 is sufficiently large (>> 𝑉𝑡ℎ ) so that a large number of electrons are attracted
under the gate. And a small positive voltage is applied to the Drain, there will be a
current 𝐼𝐷 passing from Drain to Source. The transistor is ON.

• Moreover, under the 𝑉𝐷𝑆 < 𝑉𝐺𝑆 − 𝑉𝑡ℎ condition the greater the 𝑉𝐷𝑆 is, the higher the 𝐼𝐷
is. This region is called triode region

 If 𝑉𝐷𝑆 ≥ 𝑉𝐺𝑆 − 𝑉𝑡ℎ = VDS.sat,


NMOS is in the saturation region

Saturation point.
More information in
• (29 -9 to 29 -10 ) physics for scientists & engineers
• (5.3 ) CMOS_Circuit_Design_Layout_and_Simulation
3. Layout introduction
Layout of inv
A
GND VDD
Y

p+ n+ n+ p+ p+ n+
n well
p substrate

substrate tap well tap

Layer pp cover
diffusion of p+ VDD
P substrate

Well
I OUT
N

Layer np cover VSS


diffusion of n+
Layout of NAND

NAND 1 finger NAND 2 finger


Pratice: sketch schematic from layout

A2
OUT

A1
Floor -plan

 Try to share diffusion as much as possible to save area. ( hahahaha :v )


Pratice : sketch 3 different stick diagram form schematic

SE

IN

SEX OUT

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