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Interview Questions: Cut-Off Region Linear/ Non - Saturation Region Saturation Region

The document contains interview questions about MOSFET and CMOS inverter operations. It asks about the basic structure of NMOS, the different regions of operation for MOSFETs including cut-off, linear, and saturation. It also asks about enhancement vs depletion mode MOSFETs, their I-V characteristics, and why the size of PMOS is larger than NMOS in CMOS design. Further questions cover the different regions of operation for a CMOS inverter and when crowbar current occurs.

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Rohit Somkuwar
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100 views

Interview Questions: Cut-Off Region Linear/ Non - Saturation Region Saturation Region

The document contains interview questions about MOSFET and CMOS inverter operations. It asks about the basic structure of NMOS, the different regions of operation for MOSFETs including cut-off, linear, and saturation. It also asks about enhancement vs depletion mode MOSFETs, their I-V characteristics, and why the size of PMOS is larger than NMOS in CMOS design. Further questions cover the different regions of operation for a CMOS inverter and when crowbar current occurs.

Uploaded by

Rohit Somkuwar
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Interview questions

Mosfet Operations

1. Explain the basic structure of enhancement mode Nmos

2. Explain the region of operation of Mosfet?


 Cut-off region
 Linear/ Non_saturation region
 Saturation region
3. Give the condition for linear region of operation of Mosfet?
VGS > Vth
Vds < VGS -Vth
4. Give the condition for saturation region of operation of Mosfet?
VGS > Vth
Vds > VGS -Vth
5. Give pinch of condition in Mosfet?
Vds = VGS -Vth
6. Can MOSFET conduct in both directions?
Yes
7. List the basic difference between enhancement and depletion mode Mosfets?
 In depletion mode there is an n-channel (Implant) exists between source and
drain.
 Depletion mode MOSFET is turned on at zero gate voltage.
8. Explain I-V characteristic of n-channel enhancement type Mosfet
9. Write Ids v/s Vgs curve for n-channel enhancement type Mosfet

10. Write Ids v/s Vgs curve for P-channel enhancement type Mosfet

11. Explain I-V characteristic of P-channel enhancement type Mosfet

12. In cmos technology why do we design the size of pmos to be higher than the nmos?
 In PMOS the carrier mobility is less than the carriers in NMOS. That means
PMOS is slower than an NMOS. If the sizes of PMOS and NMOS are the same,
then PMOS takes long time to charge up the output node.

13. How many regions of operation in CMOS inverter.


Five (A= NMOS- OFF, PMOS -LINEAR
B= NMOS -LINEAR, PMOS-SATURATION
C= PMOS=NMOS- SATURATION,
D= PMOS -LINEAR, NMOS-SATURATION
E= PMOS- OFF, NMOS -LINEAR)
14. In cmos inverter If both the transistors are in saturation, then they act as
 Current source
15. In cmos inverter If both the transistors are in linear, then they act as
 Resistors
16. In cmos inverter when we will get crow bar current
 When both pmos and nmos are in saturation
17. If βn = βp, then Vin is equal to
 Vdd/2
18. Explain drain punch through effects
 Drain Punch through when the drain is at a high enough voltage w.r.t. source, the
depletion region around the drain may extend to source, thus causing a current to
flow irrespective of the gate voltage.

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