Integrated Electronics

Lecture
MOSFET

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 Contents
• FET Transistor
• MOSFET Construction
• Switch Model of NMOS and PMOS Transistor
• MOS Capacitor
• Working of MOSFET
• Qualitative i -v Behavior of the NMOS
Transistor
• Saturation of the i -v Characteristics
• Difference between MOSFET and BJT
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FET Transistor

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 The MOS Transistor

JFET – Junction Field Effect Transistor

MOSFET - Metal Oxide Semiconductor Field Effect Transistor
n-channel MOSFET (nMOS) & p-channel MOSFET (pMOS)
Switch Model of NMOS Transistor

| VGS | Gate

Source Drain
(of carriers) (of
carriers)

Open (off) (Gate = ‘0’) Closed (on) (Gate = ‘1’)

Ron

| VGS | < | VT | | VGS | > | VT |

Switch Model of PMOS Transistor

| VGS | Gate

Source Drain
(of carriers) (of carriers)

Open (off) (Gate = ‘1’) Closed (on) (Gate = ‘0’)

Ron

| VGS | > | VDD – | VT | | | VGS | < | VDD – |VT| |

MOS transistors Symbols
D D

G G

S S Channel
NMOS Enhancement NMOS Depletion
D

PMOS Enhancement
 JFET and MOSFET Transistorsor

Symbol

L = 0.5-10 mm
W = 0.5-500 mm

SiO2 Thickness = 0.02-0.1 mm

Device characteristics depend on L,W, Thickness, doping levels

 MOS Capacitor
 Provides basis for understanding
the operation of MOSFET.
 Generally, a capacitor consists
of two electrodes and a
dielectric material.
 In a MOS Capacitor
• Low resistivity material,
either aluminum or
polysilicon, referred to as
gate acts as one electrode.
• A thin insulating layer
normally, silicon dioxide ,
isolates gate from
substrate body. It acts as
dielectric
• Substrate body acts as
second electrode of MOS
capacitor.

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 MOS Capacitor Operation

• MOS capacitor works in three regions.

1. ACCUMLATION REGION.
when Vgs is negative, a negative charge sheet is stored on gate, while
there will be positive charge sheet on substrate.
Substrate is of p-type semiconductor.
2. DEPLETION REGION
On applying +ve Vgs, it will create a depletion layer just below the
insulating layer b/c of repulsion of +ve voltage to p-type material.

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MOS Capacitor Operation
3. INVERSION LAYER
• On applying more +ve Vgs, a channel just below the gate
is formed
• This channel contains –ve charges
• Initially, layer below gate was of +ve charges, now it is of
–ve charges.
• Layer has been inverted.

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 Working of MOSFET
• The source and drain provide a
supply of carriers so that the
inversion layer can rapidly form in
response to the gate voltage.
• The substrate of the NMOS
transistor represents a fourth Schotkk\
device terminal and is referred to
synonymously as the substrate
terminal, or the body terminal
(B).

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 Qualitative i -v Behavior of the NMOS
Transistor
• For a dc gate-source
voltage, VGS = VGS, well
below threshold voltage
VT N.
• pn junctions exist
between the source and
drain, and only a small
leakage current can
flow between these two
terminals.
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 Qualitative i -v Behavior of the NMOS
Transistor
• For VGS near but still
below threshold, a
depletion region forms at
the gate and merges with
the depletion regions of
the source and drain.
• The depletion region is
devoid of free carriers, so
a current still does not
appear between the
source and drain.

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 Qualitative i -v Behavior of the NMOS
Transistor
• Finally, when the gate-
channel voltage exceeds
the threshold voltage VTN,
electrons flow in from the
source and drain to form
an inversion layer that
connects the n+ source
region to the n+ drain.
• A resistive connection,
the channel, exists
between the source and
drain terminals.

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Saturation of the i -v Characteristics

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Saturation of the i -v Characteristics

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Saturation of the i -v Characteristics

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Saturation of the i -v Characteristics

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 Saturation of the i -v Characteristics
• The formula for the linear/triode/active region
𝜇𝑛 𝐶𝑜𝑥𝑊 1
• 𝑖𝐷 = (𝑉𝐺𝑆 −𝑉𝑡 𝑉𝐷𝑆 − 𝑉𝐷𝑆 2 ]
𝐿 2
• 𝜇𝑛 = electron mobility
• For Saturation
1 ′𝑊
• 𝑖𝐷 = 𝐾 (𝑉𝐺𝑆 − 𝑉𝑡 )2
2 𝐿
• 𝐾 ′ 𝑛 = 𝜇𝑛 𝐶𝑜𝑥
• Process tranconductance parameter

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 Example
• Detrmine the value of drain current for an NMOS
transistor having (i) VGS = 0.7V (ii) VGS = 0.5V, VDS = 0.1V,
W = 10µm, L = 1µm, Threshold voltage is 0.1V value of
transconductance parameter is 30µA/V2.
𝜇𝑛 𝑊𝐶𝑜𝑥 1
• 𝑖𝐷 = (𝑉𝐺𝑆 −𝑉𝑡 𝑉𝐷𝑆 − 𝑉𝐷𝑆 2]
𝐿 2
−6 10 x 10−6 1 2
• 𝑖𝐷 = 30 x 10 1 x 10 −6 (0.7-0.1)x0.1- 2
(0.1 )
• 𝑖𝐷 = -5mA
• If VGS = 0.7V
• Than
• 𝑖𝐷 = -4.988mA

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 Difference between MOSFET and BJT
BJT MOSFET

BJT is current control device MOSFET is voltage control device

It is bipolar It is unipolar

It is bigger as compare to FET

Input impedance MOSFET is greater than BJT

BJT has less thermal stability then MOSFET

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Why SiO2 layer is used in MOSFET?
• SiO2 is used for isolation and it can be grown
easily when compared to other materials.
• This process is also simple as it require only
oxidation which is already existing in Si layer.
• It controls a large current flows with an
applied voltage.
• Very high switching rates are possible.

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END OF LECTURE

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