MOS Capacitor

Advantages and Applications of
MOSFET
Advantages
• It can be made very small
• Occupy less space in VLSI Circuits
• No resistors, capacitors and diodes are required in VLSI
Circuits
• High input impedance compared to BJT
• Current Controlled device
Applications
• Amplifying and switching devices
• Microprocessors
• laptops
Types of MOSFET Devices
The MOSFET is classified into two types such as;

• Depletion mode MOSFET
• Enhancement mode MOSFET
Basic Structure of MOS Capacitor
MOS Capacitor Under Bias:
Electric Field and Charge
Parallel plate capacitor
Negative gate bias:

Holes attracted to gate
Positive gate bias:

Electrons attracted to gate
MOS Capacitor Under Bias:
Electric Field and Charge
Positive gate bias:

Electrons attracted to gate
MOSFET capacitor with n type
Substrate
Schematic of n-Channel Enhancement
Mode MOSFET
Basic Transistor Operation
Before electron inversion After electron inversion layer

layer is formed is formed
Basic Transistor Operation
Current Versus Voltage Characteristics:
Enhancement-Mode nMOSFET
Family of iD Versus vDS Curves:
Enhancement-Mode nMOSFET
N Channel-Current voltage
Characteristics equation
• Non Saturation region
• Saturation region
• Conduction Parameter
p-Channel Enhancement-Mode
MOSFET
P Channel-Current voltage
Characteristics equation
• Non saturation
• Saturation Region
• Conduction Parameter
Symbols for n-Channel
Enhancement-Mode MOSFET
Symbols for p-Channel
Enhancement-Mode MOSFET
n-Channel Depletion-Mode MOSFET
Family of iD Versus vDS Curves:
Depletion-Mode nMOSFET
Symbols
p-Channel Depletion-
Mode MOSFET
Symbols
Cross-Section of nMOSFET and
pMOSFET
Both transistors are used in the fabrication of CMOS circuitry.

Summary of I-V Relationships
Region NMOS PMOS
Nonsaturation vDS<vDS(sat) vSD<vSD(sat)

2
DS
i  K [ 2( v 
iD  K n [2(vGS  VTN )vDS  v ] D p SG TP SD SD ]
V ) v  v 2
Saturation vDS>vDS(sat) vSD>vSD(sat)

iD  K n [vGS  VTN ]2 iD  K p [vSG  VTP ]2
Transition Pt. vDS(sat) = vGS - VTN vSD(sat) = vSG + VTN
Enhancement VTN > 0V VTP < 0V

Mode
Depletion VTN < 0V VTP > 0V
Mode
Conduction Parameters
W nCox ' W
Kn   kn
• NMOSFET L L
W p Cox W
Kp  k
'
p
L L
• PMOSFET
Cox   o tox
where:
Channel Length Modulation:
Early Voltage
MOS Capacitor
In Bulk semi conductor
Semi conductor work function
Operation of Ideal MOS Capacitor
• Assumption
• Metal Work function equal to semiconductor
work function
• No charges in the Oxide Device is neutral
• Oxide resistivity is infinitely large

MOS capacitor at zero Bias VGB= 0
MOS capacitor at Bias VGB> 0
• The applied VGB is sum of drop in the oxide layer Ψox and
semiconductor Ψs
• Metal fermi level is lower compared to semiconductor fermi
level by qVGB The vertical distance between the Fermi level in
the metal, EFM , and the Fermi level in the Si, EFSis equal to the
applied gate voltage
•
• VGB =Ψox + Ψs
Band diagram of MOS capacitor at
VGB> 0
MOS capacitor at VGB> 0
• Fermi level EF is flat (constant with distance x) in the Si – Since no current
flows in the x direction, we can assume that equilibrium conditions prevail
• Vacuum level is continuous
• Ψox is the voltage dropped across the oxide (Ψox = total amount of band
bending in the oxide) ψs is the voltage dropped in the silicon (total
amount of band bending in the silicon)
• From the band diagram EF –Ei
• The hole concentration in semiconductor surface is therefore
• Electron concentration
• Application of positive gate voltage majority

carrier concentration reduced and minority
carrier concentration increased in
semiconductor surface
• Depletion Approximation: The surface of the Si is depleted of
mobile carriers to a depth Wd. •
• The charge density within the depletion region is
• Width of the depletion layer
• The total charge QS per unit area in semi conductor surface

density is equal to Bulk charge density QB
• To evaluate Ψox
Band Diagram on the onset of strong
inversion
• ψs increases when VGB increases. Conversly
When VGB increases both ψs and Ψox increases
• ψs =φB then t semiconductor surface is
like intrinsic semiconductor. When the electron
increases above ni the semi conductor is said to
be inverted
• Electron concentration equal to hole

concentration this point is referred as strong
inversion
Band Diagram on the onset of strong
inversion
MOS capacitor at VGB< 0
• Accumulation
MOS capacitor
MOS capacitor
Real Si-SiO2MOS Capacitor
• The work function difference between the metal and the semiconductor is
generally not zero as in our idealized case, and certainly isn’t for the most
commonly used metals in the metal-Si-SiO2 system. and
• How will this affect our band diagram?

• At thermal equilibrium, the bands are bent downwards so the semiconductor
surface is negatively charged, and the metal positively charged.(inverted)
• In order to get back to the flat-band condition discussed for our ideal MOS diode
we need to apply a negative bias to the metal (the flat-band voltage),
• If behaves like accumulation

Real Si-SiO2MOS Capacitor
• In modern technologies poly silicon is used as
gate
• The new threshold voltage for flat band

condition
Energy band diagram for MOS
Capacitor with
Traps & charges
• Real MOS diodes are also affected by charges
trapped within the oxide and the interface...
Traps & charges
• Interface trapped charges- due to discontinuity in clean
silicon reduction density of states and play a major role in the
performance , depend on oxidation and orientation of the
crystal these states can be acceptor like or donor like
behavior. Qit
• Fixed Oxide charges : When silicon layer is converted into
SiO2 by oxidation process. The excess silicon ion in this layer
generate net immobile positive charge Qf
• Mobile ionic charges: due to contamination in alkali metal.
Move back and forth in the oxide when bias is changed . Qm
• Oxide Trapped Charges : when the device is subjected to high
ionization bombardment charges may be trapped in the oxide.
Qox
Energy band
Oxide charges & the flat-band voltage
• Consider a positive charge sheet per unit area, Qo within the
oxide, inducing negative charges on both the metal and the
semiconductor. The flat-band condition is reached by
increasing the charges on the metal (by applying a negative
voltage, VFB ) to reduce the electric field distribution at the
semiconductor surface to zero.
• VFB depend s on the location of these charges. when located

at metal oxide interface xo=0 and VFB is zero and maximum at
metal semiconductor interface . There fore for fixed charges
Oxide charges & the flat-band voltage
• The mobile and ionic charges distributed through out the oxide. For an arbitrary
space charge distribution within the oxide we can integrate the volume charge
density,
For a real diode in which the work function difference is nonzero and the interface-
trapped charge is negligible, the flat-band voltage is given by
CV characteristics of MOSCAP
• Small signal capacitance by applying a dc potential and
change potential ΔV on the op of it
• In Accumulation mode:
• C=Cox
• In depletion mode :
• C= Cox + C s
CV characteristics for Non ideal MOS
diode
CV characteristics of MOSCAP for
surface States

MOS Capacitor

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Advantages and Applications of

The MOSFET is classified into two types such as;

Parallel plate capacitor

Negative gate bias:

Positive gate bias:

Positive gate bias:

Before electron inversion After electron inversion layer

Both transistors are used in the fabrication of CMOS circuitry.

Nonsaturation vDS<vDS(sat) vSD<vSD(sat)

Saturation vDS>vDS(sat) vSD>vSD(sat)

Enhancement VTN > 0V VTP < 0V

• No charges in the Oxide Device is neutral

• Oxide resistivity is infinitely large

• Application of positive gate voltage majority

• The total charge QS per unit area in semi conductor surface

• Electron concentration equal to hole

• How will this affect our band diagram?

• If behaves like accumulation

• The new threshold voltage for flat band

• VFB depend s on the location of these charges. when located

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