SUP/SUB75N06-08

Vishay Siliconix

N-Channel 60-V (D-S), 175_C MOSFET

PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (W) ID (A)
60 0.008 75a

D
TO-220AB

TO-263

DRAIN connected to TAB

G D S
Top View
G D S S
SUB75N06-08
Top View
N-Channel MOSFET
SUP75N06-08

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Gate-Source Voltage VGS "20 V
TC = 25_C 75a
Continuous Drain Current
ID
(TJ = 175_C) TC = 125_C 55
A
Pulsed Drain Current IDM 240

Avalanche Current IAR 60

Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ

TC = 25_C (TO-220AB and TO-263) 250c

Power Dissipation PD W
TA = 25_C (TO-263)d 3.7

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 _C/W
C/W
Junction-to-Case RthJC 0.6

Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70283 www.vishay.com

S-05111—Rev. F, 10-Dec-01 2-1
SUP/SUB75N06-08
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 3.0 4.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 60 V, VGS = 0 V 1

Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 mA

m
VDS = 60 V, VGS = 0 V, TJ = 175_C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.007 0.008

Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.012 W

VGS = 10 V, ID = 30 A, TJ = 175_C 0.016
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S

Dynamicb
Input Capacitance Ciss 4800
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 910 pF
Reverse Transfer Capacitance Crss 270
Total Gate Chargec Qg 85 120
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 75 A 28 nC
Gate-Drain Chargec Qgd 26
Turn-On Delay Timec td(on) 20 40
Rise Timec tr 95 200
VDD = 30 V, RL = 0.47 W
ns
Turn-Off Delay Timec td(off) ID ^ 75 A, VGEN = 10 V, RG = 2.5 W 65 120
Fall Timec tf 20 60

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current IS 75
A
Pulsed Current ISM 240
Forward Voltagea VSD IF = 75 A , VGS = 0 V 1.0 1.3 V
Reverse Recovery Time trr 67 120 ns
Peak Reverse Recovery Current IRM(REC) m
IF = 75 A, di/dt = 100 A/ms 6 8 A
Reverse Recovery Charge Qrr 0.2 0.48 mC

Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

www.vishay.com S FaxBack 408-970-5600 Document Number: 70283

2-2 S-05111—Rev. F, 10-Dec-01
 SUP/SUB75N06-08
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

250 200
VGS = 10, 9, 8 V
7V
200
6V 150
I D – Drain Current (A)

I D – Drain Current (A)

150

100

100

5V
50 TC = 125_C
50
25_C
4V
–55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6 7

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

120 0.010

TC = –55_C
100 25_C 0.008 VGS = 10 V
r DS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)

80
125_C
0.006
VGS = 20 V
60

0.004
40

0.002
20

0 0.000
0 20 40 60 80 100 0 20 40 60 80 100 120

VGS – Gate-to-Source Voltage (V)

ID – Drain Current (A)

Capacitance Gate Charge

7000 20

6000 VDS = 30 V
V GS – Gate-to-Source Voltage (V)

16 ID = 75 A
Ciss
5000
C – Capacitance (pF)

12
4000

3000
8

2000

Coss 4
1000 Crss

0 0
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 70283 www.vishay.com

S-05111—Rev. F, 10-Dec-01 2-3
 SUP/SUB75N06-08
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
2.0
r DS(on) – On-Resistance ( Ω )

TJ = 150_C

I S – Source Current (A)

(Normalized)

1.5 TJ = 25_C
10
1.0

0.5

0.0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 500

80 Limited 10 ms
by rDS(on)
100
I D – Drain Current (A)

I D – Drain Current (A)

60 100 as

1 ms
40
10

20 TC = 25_C
Single Pulse 10 ms

100 ms
0 1 dc
0 25 50 75 100 125 150 175 0.1 1 10 100
TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1
0.1 0.05

0.02

Single Pulse

0.01
10–5 10–4 10–3 10–2 10–1 1 3
Square Wave Pulse Duration (sec)

www.vishay.com S FaxBack 408-970-5600 Document Number: 70283

2-4 S-05111—Rev. F, 10-Dec-01