SUP85N10-10P

Vishay Siliconix

N-Channel 100 V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) Definition
100 0.010 at VGS = 10 V 85d 77 • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC

TO-220AB APPLICATIONS
• Industrial

G D S

Top View
S
Ordering Information:
SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 85d
Continuous Drain Current (TJ = 175 °C) ID
TC = 70 °C 83
A
Pulsed Drain Current IDM 240
Avalanche Current IAS 60
Single Avalanche Energya L = 0.1 mH EAS 180 mJ
TC = 25 °C b
227
Maximum Power Dissipationa PD W
TA = 25 °Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
c RthJA 40
Junction-to-Ambient (PCB Mount)
°C/W
Junction-to-Case (Drain) RthJC 0.55
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.

Document Number: 64833 www.vishay.com

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SUP85N10-10P
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 100
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 4.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA
VDS = 100 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 µA
VDS = 100 V, VGS = 0 V, TJ = 150 °C 250
On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 120 A
VGS = 10 V, ID = 20 A 0.0080 0.0100
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0146 0.0185
Forward Transconductancea gfs VDS = 15 V, ID = 20 A 70 S
Dynamicb
Input Capacitance Ciss 4660
Output Capacitance Coss VGS = 0 V, VDS = 50 V, f = 1 MHz 315 pF
Reverse Transfer Capacitance Crss 150
Total Gate Chargec Qg 77 120
Gate-Source Chargec Qgs VDS = 50 V, VGS = 10 V, ID = 75 A 25 nC
c Qgd 20
Gate-Drain Charge
Gate Resistance Rg f = 1 MHz 0.25 1.2 2.4 Ω
Turn-On Delay Timec td(on) 15 25
Rise Timec tr VDD = 50 V, RL = 0.67 Ω 12 20
ns
Turn-Off Delay Time c td(off) ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω 25 40
Fall Timec tf 8 15
b
Drain-Source Body Diode Characteristics TC = 25 °C
Continuous Current IS 85
A
Pulsed Current ISM 240
Forward Voltagea VSD IF = 5 A, VGS = 0 V 0.8 1.5 V
Reverse Recovery Time trr 74 115 ns
Peak Reverse Recovery Current IRM(REC) IF = 5 A, dI/dt = 100 A/µs 6.7 10 A
Reverse Recovery Charge Qrr 250 400 nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 64833

2 S11-2239-Rev. B, 14-Nov-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

120 10

VGS = 10 V thru 7 V
100
8
I D - Drain Current (A)

I D - Drain Current (A)

80
6

60

VGS = 6 V 4
40
TC = 25 °C
2
20
TC = 125 °C
TC = - 55 °C
0 0
0 1 2 3 4 5 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

150 0.020

120
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)

TC = - 55 °C 0.015

90
TC = 25 °C
0.010
TC = 125 °C VGS = 10 V
60

0.005
30

0 0.000
0 10 20 30 40 50 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

6000 10

ID = 16 A
5000 Ciss
VGS - Gate-to-Source Voltage (V)

VDS = 50 V
C - Capacitance (pF)

4000
6 VDS = 25 V

3000 VDS = 75 V

4
2000

2
1000 Coss

Crss
0 0
0 20 40 60 80 100 0 20 40 60 80
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

Document Number: 64833 www.vishay.com

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.1 100

ID = 20 A
TJ = 150 °C
R DS(on) - On-Resistance (Normalized)

10

R DS(on) - On-Resistance (Ω)

1.7 TJ = 25 °C
VGS = 10 V
1

1.3
TJ = - 50 °C
0.1

0.9
0.01

0.5 0.001
- 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

0.05 0.8

0.04 0.3
R DS(on) - On-Resistance (Ω)

VGS(th) Variance (V)

0.03 - 0.2

ID = 1 mA
0.02 - 0.7
TJ = 125 °C

ID = 250 µA
0.01 - 1.2

TJ = 25 °C
0.00 - 1.7
3 4 5 6 7 8 9 10 - 50 - 25 0 25 50 75 100 125 150
VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage Threshold Voltage

130 100

ID = 1 mA

124
BVDSS (V)

118 TJ = 25 °C
I DAV (A)

TJ = 150 °C
10
112

106

100 1
- 50 - 25 0 25 50 75 100 125 150 10-5 10-4 10-3 10-2 10-1 1
TJ - Junction Temperature (°C) t AV (s)
Drain Source Breakdown Voltage vs. Junction Temperature Single Pulse Avalanche Current Capability vs. Time

www.vishay.com Document Number: 64833

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1000
Limited by RDS(on)*

100 100 µs

I D - Drain Current (A)

1 ms
10
10 ms
100 ms, DC
1

0.1

TC = 25 °C
Single Pulse
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area

300 120

100
240
I D - Drain Current (A)

80 Package Limited
180
Power (W)

60

120
40

60
20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TC - Case Temperature (°C)

Power Derating, Junction-to-Case Current Derating*

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 64833 www.vishay.com

S11-2239-Rev. B, 14-Nov-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1 0.05
0.02
Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64833.

www.vishay.com Document Number: 64833

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Revision: 01-Jan-2019 1 Document Number: 91000