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    C3358

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    ofank
    This document provides specifications for the UTC 2SC3358 NPN silicon epitaxial transistor. It lists maximum ratings, electrical characteristics, and other details about the transistor. The document also contains notes about UTC assuming no responsibility for failures exceeding ratings and that the transistor is not intended for use in life support systems.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    C3358

    Uploaded by

    ofank
    200 views2 pages
    This document provides specifications for the UTC 2SC3358 NPN silicon epitaxial transistor. It lists maximum ratings, electrical characteristics, and other details about the transistor. The document also contains notes about UTC assuming no responsibility for failures exceeding ratings and that the transistor is not intended for use in life support systems.

    Original Description:

    Data sheet C3358

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    This document provides specifications for the UTC 2SC3358 NPN silicon epitaxial transistor. It lists maximum ratings, electrical characteristics, and other details about the transistor. The document also contains notes about UTC assuming no responsibility for failures exceeding ratings and that the transistor is not intended for use in life support systems.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    200 views2 pages

    C3358

    Uploaded by

    ofank
    This document provides specifications for the UTC 2SC3358 NPN silicon epitaxial transistor. It lists maximum ratings, electrical characteristics, and other details about the transistor. The document also contains notes about UTC assuming no responsibility for failures exceeding ratings and that the transistor is not intended for use in life support systems.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    www.DataSheet4U.

    com

    UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR

    HIGH FREQUENCY LOW NOISE


    3
    AMPLIFIER

    2 4
    FEATURES
    *Low Noise and High Gain
    *High Power Gain

    TO-50

    1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER

    ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)


    PARAMETER SYMBOL RATING UNIT
    Collector-base voltage VCBO 20 V
    Collector-emitter voltage VCEO 12 V
    Emitter-base voltage VEBO 3 V
    Collector current Ic 100 mA
    Total power dissipation PT 250 mW
    Junction Temperature Tj 150 °C
    Storage Temperature Tstg -65 ~ +150 °C

    ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 µA
    Emitter Cutoff Current IEBO VEB=1V, IC=0 1.0 µA
    DC Current Gain hFE VCE=10V, IC=20mA 50 300
    Gain bandwidth Product fT VCE=10V, IC=20mA 7 GHz
    Feed-Back Capacitance Cre VCB=10V, IE=0, f=1.0MHz 1.0 pF
    Noise figure NF VCE=10V, IC=7mA, f=1.0GHz 2.0 dB

    UTC UNISONIC TECHNOLOGIES CO., LTD. 1

    QW-R212-001,A
    www.DataSheet4U.com

    UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UTC UNISONIC TECHNOLOGIES CO., LTD. 2

    QW-R212-001,A

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