DATA SHEET

SILICON TRANSISTOR

2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD

DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for PACKAGE DIMENSIONS
(Unit: mm)
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
4.5±0.1
1.6±0.2 1.5±0.1
FEATURES
• Low Noise and High Gain

4.0±0.25
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,

2.5±0.1
IC = 7 mA, f = 1.0 GHz C
E B

0.8 MIN.
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, 0.42 0.42±0.06
±0.06
IC = 40 mA, f = 1.0 GHz 1.5 0.47
±0.06 −0.03
• Large PT in Small Package 3.0 0.41 +0.05
PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.
Term, Connection
E : Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) C : Collector (Fin)
B : Base
Collector to Base Voltage VCBO 20 V
(SOT-89)
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT * 1.2 W
Thermal Resistance Rth(j-a)* 62.5 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
* mounted on 16 cm2 × 0.7 mm Ceramic Substrate

Document No. P10357EJ4V1DS00 (4th edition)

Date Published March 1997 N
Printed in Japan © 1985
 2SC3357

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Collector Cutoff Current ICBO 1.0 µA VCB = 10 V, IE = 0

Emitter Cutoff Current IEBO 1.0 µA VEB = 1.0 V, IC = 0

DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA

Gain Bandwidth Product fT 6.5 GHz VCE = 10 V, IC = 20 mA

Feed-Back Capacitance Cre** 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain S21e 2

9 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz

Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz

* Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
hFE Classification
Class RH RF RE

Marking RH RF RE

hFE 50 to 100 80 to 160 125 to 250

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs. FEED-BACK CAPACITANCE vs.

AMBIENT TEMPERATURE COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
PT-Total Power Dissipation-W

Cre-Feed-back Capacitance-pF

2.0

Ceramic Substrate 1
16 cm2 × 0.7 mm

1.0

0.5
Free Air
Rth(j-a) 312.5 ˚C/W

0 50 100 150 0.3

0 0.5 1 2 5 10 20 30
TA-Ambient Temperature-°C
VCB-Collector to Base Voltage-V

2
 2SC3357

DC CURRENT GAIN vs. INSERTION GAIN vs.

COLLECTOR CURRENT COLLECTOR CURRENT
200 15
VCE = 10 V VCE = 10 V
f = 1.0 GHz

100

|S21e|2-Insertion Gain-dB
hFE-DC Current Gain

10

50

20

10 0
0.5 1 5 10 50 0.5 1 5 10 50 70
IC-Collector Current-mA IC-Collector Current-mA

GAIN BANDWIDTH PROUDCT vs. INSERTION GAIN, MAXIMUM GAIN

COLLECTOR CURRENT vs. FREQUENCY
10
Gmax
fT-Gain Bandwidth Product-MHz

5.0
20

|S21e|2-Insertion Gain-dB
Gmax-Maximum Gain-dB
3.0
2.0 |S21e|2

1.0
10
0.5
0.3
0.2 VCE = 10 V
VCE = 10 V IC = 20 mA
0.1 0
0 0.5 10 5.0 10 30 0.1 0.2 0.4 0.6 0.8 1.0
IC-Collector Current-mA f-Frequency-GHz

NOISE FIGURE vs. INTERMODULATION DISTORTION vs.

COLLECTOR CURRENT COLLECTOR CURRENT
7
VCE = 10 V
f = 1.0 GHz
6
−80
NF-Noise Figure-dB

5
IM3
4 −70
IM2, IM3 (dB)

3
−60
2 IM2

−50

0 VCE = 10 V
0.5 1 5 10 50 70 at V0 = 100 dB µ V/50 Ω
−40 Rg = Re = 50 Ω
IC-Collector Current-mA
IM2 f = 90 + 100 MHz
IM3 f = 2 × 200 − 190 MHz
−30
20 30 40 50 60 70
IC-Collector Current-mA

3
 2SC3357

S-PARAMETER
VCE = 10 V, IC = 40 mA, ZO = 50 Ω

f (MHz) S11 ∠ S11 S21 ∠ S21 S12 ∠ S12 S22 ∠ S22

200 0.196 −94.4 13.023 102.4 0.043 74.5 0.444 −21.1
400 0.103 −118.3 6.852 89.2 0.081 77.4 0.398 −25.3
600 0.056 −131.1 4.632 78.3 0.118 77.5 0.399 −26.9
800 0.024 −43.7 3.527 75.9 0.152 78.0 0.414 −28.9
1000 0.008 −2.0 2.854 68.7 0.188 78.4 0.440 −33.5
1200 0.039 13.1 2.421 65.7 0.218 75.7 0.461 −33.3
1400 0.072 11.8 2.118 59.0 0.255 71.7 0.479 −36.3
1600 0.102 9.6 1.887 57.1 0.278 73.1 0.499 −35.5
1800 0.129 8.6 1.681 52.5 0.308 71.3 0.515 −38.8
2000 0.151 9.8 1.579 51.4 0.339 71.8 0.537 −35.9

VCE = 10 V, IC = 20 mA, ZO = 50 Ω

f (MHz) S11 ∠ S11 S21 ∠ S21 S12 ∠ S12 S22 ∠ S22

200 0.130 −109.2 13.430 98.1 0.042 79.0 0.403 −22.1
400 0.073 −134.1 6.930 87.2 0.081 80.6 0.382 −24.7
600 0.037 −146.6 4.690 79.4 0.119 79.4 0.392 −25.6
800 0.010 177.1 3.560 75.2 0.154 79.7 0.412 −27.1
1000 0.024 23.7 2.878 68.2 0.191 76.5 0.440 −31.9
1200 0.056 17.2 2.439 65.4 0.220 76.8 0.463 −32.3
1400 0.093 13.8 2.133 59.0 0.257 72.9 0.483 −35.7
1600 0.124 12.0 1.898 57.3 0.280 74.0 0.504 −35.3
1800 0.151 11.0 1.693 52.9 0.311 72.4 0.519 −38.4
2000 0.174 13.4 1.591 52.0 0.341 72.8 0.542 −36.3

4
 2SC3357

S11e, S22e-FREQUENCY 0.11

0.12 0.13 0.14
0.15
0.10 0.39
0.38 0.37 0.36
9 0.35 0.1
CONDITION VCE = 10 V 0.0 0.40 100
90 80 6
1 0.3 0.1
8 0.4 110 70 4

1.0
0.0 2 0.3 7

0.9

1.2
0.8
0.4 20 600 3 0.

1.4
07

0.7
1 18
0. 3

1.6
0.
4 32

0.6
0. 0 0.2

1.8
50
13

0. 31
14 0.4 6

2.0
0

19
0.

0.
4

5
0.
T
EN 0.4

0.2 0
0.4 5

0
0 .0

40
N

0.3
5

) MPO

0
4
0.

( –Z–+–J–XTANCE CO
0.0TOR
0
0.6 3.

0.2
4
RA

0.2
6
0
0.4

1
30
0.0 GENE

15

AC
0.8

9
0.3

O
RE
4.0

0.2
3

IVE
0.02 TOWARD

0.2
1.0

7
0.4

SIT

2
S

8
6.0

0
REE

1.

20
P
0.2

DEG

0.23
THS
0.8

0.48

0.27
NG

3 HS TOWLAE OF REFLECTION COEFFCIENT IN

0.6

WAVELE
10

10
0.01

0.24
0.49

0.26
0.1 0.4
S11 f = 20 GHz 20
0.2
50

0.1

0.2

0.3

0.4

0.5

0.6
0.7
0.8
0.9
1.0

1.2

1.4
1.6
1.8
2.0

3.0

4.0

5.0

10

20

0.25
0.25
0
0
0

0
REACTANCE COMPONENT
R
––––
ZO ( 0.2 ) f = 0.2 GHz
50
20

0.02 RD LOAD
0.01

0.24
0.49

0.26
0.4

−10
0.1
f = 0.2 GHz 10

IC =0.620 mA IC = 20 mA

0.23
0NGT ANG
0.48

0.27
8
0.
0

−20
0.2

T
6

0
EN
.0W4AVE −1

0.2
5.0

1.
7
.0

0.2
ON f = 2.0 GHz
0.4

1.0

2
MP
L

8
4.0

)
CO
50

AC −J––O–
0.8

−3
0.2
–Z
0.3 TA X
E
NC
−1
6

0.
(

0
0.4
0

1
2 9
0.6 0
3.
RE

0.2 0
0.4 5

E
.0

4
0 06 40

0.
IV

−4 0.1 1
5

0.3
0
0

AT
0. −1

0
G 0.4
NE
5
44

0.
9
0.

−5

2.0
30

3
.

0
−1 0.

1.8
07
0.6

0.2 18
0. 3 0.

1.6
4 20 8
0.7 −6 32
0. −1 0 0.1

1.4
0.0 2
0.8
0.3 7

1.2
0.9
−70

1.0
0
0.0
9 0.4 −11 0.1
6 3
1 −100 −80 0.15 0.3
0.4 0.10 −90 4
0.11 0.14 0.35
0.40 0.12 0.13
0.36
0.39 0.38 0.37
S21e-FREQUENCY S12e-FREQUENCY
CONDITION VCE = 10 V CONDITION VCE = 10 V
IC = 20 mA IC = 20 mA

90° 90°

120° f = 0.2 GHz 60° 120° 60°

f = 2.0 GHz

S21e
150° 30° 150° 30°
S12e

f = 2.0 GHz f = 0.2 GHz

180° 0° 180° 0°
3 6 9 12 15 0.1 0.2 0.3 0.4 0.5

−150° −30° −150° −30°

−120° −60° −120° −60°

−90° −90°