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Solution Assignments 3

1. The intrinsic carrier concentration in silicon at 300K is approximately 1010 cm-3. 2. The intrinsic Fermi level will be at the midgap energy only when the electron and hole effective masses are equal. If the hole effective mass is greater than the electron effective mass, the Fermi level will be slightly above midgap. 3. A donor impurity adds an electron to the conduction band, making the material n-type. An acceptor impurity accepts an electron from the valence band, making the material p-type.

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309 views

Solution Assignments 3

1. The intrinsic carrier concentration in silicon at 300K is approximately 1010 cm-3. 2. The intrinsic Fermi level will be at the midgap energy only when the electron and hole effective masses are equal. If the hole effective mass is greater than the electron effective mass, the Fermi level will be slightly above midgap. 3. A donor impurity adds an electron to the conduction band, making the material n-type. An acceptor impurity accepts an electron from the valence band, making the material p-type.

Uploaded by

Ahmed Jamal
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Solution Assignments 3

1. What is the value of the intrinsic carrier concentration in silicon at T = 300 K?


ni,Si(T=300K) ≈ 1010 cm-3

2. Under what condition would the intrinsic Fermi level be at the midgap energy?
If the electron and hole effective masses are equal so that mp*=mn*, then the intrinsic
Fermi level is exactly in the center of the bandgap (midgap energy).
If mp*>mn*, the intrinsic Fermi level is slightly above the center.
If mp*<mn*, it is slightly below the center of the bandgap.

The density of states function is directly related to the carrier effective mass; thus, a
larger effective mass means a larger density of states function. The intrinsic Fermi level
must shift away from the band with the larger density of states in order to maintain
equal numbers of electrons and holes.

3. What is a donor impurity? What is an acceptor impurity?


By consider adding a group V element, such as phosphorus, as a substitution
impurity to silicon atoms semiconductor. The group V element has five valence
electrons. Four of these will contribute to the covalent bonding with the silicon atoms,
leaving the fifth more loosely bound to the phosphorus atom. If a small amount of
energy, such as thermal energy, is added to the donor electron, it can be elevated into
the conduction band, leaving behind a positively charged phosphorus ion. The
electron in the conduction band can now move through the crystal generating a
current, while the positively charged ion is fixed in the crystal. This type of impurity
atom donates an electron to the conduction band and so is called a donor impurity
atom. The donor impurity atoms add electrons to the conduction band without
creating holes in the valence band. The resulting material is referred to as an n-type
semiconductor.

By consider adding a group III element, such as boron, as a substitution impurity to


silicon. The group III element has three valence electrons, which are all taken up in the
covalent bonding. The group III atom accepts an electron from the valence band and so
is referred to as an acceptor impurity atom. The acceptor atom can generate holes in
the valence band without generating electrons in the conduction band. This type of
semiconductor material is referred to as a p type material. The pure single-crystal

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semiconductor material is called an intrinsic material. Adding controlled amounts of
dopant atoms, either donors or acceptors, creates a material called an extrinsic
semiconductor.

4. What is meant by complete ionization?


Complete ionization means, that in case of a doping with donor atoms, all donor atoms
have given their fifth valence electron to the conduction band, i.e. all donor atoms are
ionized. In case of a doping with acceptor atoms, all acceptor atoms have accepted a
fourth valence electron from the valence band and are thus ionized.

5. What is the product of no and po equal to?


The general equations for no and po in terms of the Fermi energy are:

or

6. At what temperature does the energy bandgap of silicon equal exactly 1 eV?

7. Calculate the Fermi function at 6.5 eV if EF = 6.25 eV and T = 300 K. Repeat at T = 950 K
assuming that the Fermi energy does not change. At what temperature does the
probability that an energy level at E = 5.95 eV is empty equal 1 %.

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8. Calculate the effective density of states for electrons and holes in germanium, silicon
and gallium arsenide at room temperature and at 100 °C. Use the effective masses for
density of states calculations.

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9. Calculate the intrinsic carrier density in germanium, silicon and gallium arsenide at
room temperature (300 K). Repeat at 100 °C. Assume that the energy bandgap is
independent of temperature and use the room temperature values.

10. Calculate the electron and hole density in germanium, silicon and gallium arsenide if
the Fermi energy is 0.3 eV above the intrinsic energy level. Repeat if the Fermi energy
is 0.3 eV below the conduction band edge. Assume that T = 300K.

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11. A silicon wafer is doped with 1013 cm-3 shallow donors and 9 x 1012 cm-3 shallow
acceptors. Calculate the electron and hole density at 300 K. Use ni = 1010 cm-3.

12. The intrinsic carrier concentration in silicon is to be no greater than n o = 1x1012 cm-3.
Assume Eg = 1.12 eV. Determine the maximum temperature allowed for the silicon.

  Eg 
ni2  N c N  exp 

 kT 
3
 T 
110 
12 2
  2.8 10 1.04 10  
19

 300 
19   1.12 
  exp  0.0259T 300
 

By trial and error, T  381 K

13. Determine the values of no and po for silicon at T = 300 K if the Fermi energy is 0.22 eV
above the valence band energy.
  E F  E  
p o  N  exp  
 kT 

 0.22 
 1.04 1019  exp 
 0.0259 

 2.13 1015 cm 3

Assuming Ec  E F  E g  E F  E 

 1.12  0.22  0.90 eV

  E c  E F  
n o  N c exp  
 kT 

 0.90 
  2.8 1019  exp 
 0.0259 

 2.27 104 cm 3

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14. The thermal equilibrium hole concentration in silicon at T = 300 K is p o = 2×10-15 cm-3.
Determine the thermal equilibrium electron concentration. Is the material n type or p
type?

15. Consider germanium at T = 300 K with donor concentrations of Nd = 1014, 1016, and
1018 cm-3. Let Na = 0. Calculate the position of the Fermi energy level with respect to
the intrinsic Fermi level for these doping concentrations.

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