TUNNEL DIODE

1. Tunnel diode definition

A tunnel diode is a heavily doped p-n junction diode in which the electric current
decreases as the voltage increase.

In tunnel diode, electric current is caused by “tunneling” the tunnel diode is us as a

very fast switching device in computers. It is also used in high frequency
oscillators and amplifier.

Symbol of tunnel diode

The circuit symbol of tunnel diode is shown in the below figure. In tunnel diode,
the p-type semiconductor act as anode and the n-type semiconductor act as a
cathode.

We know that an anode is a positively charged electrode which attracts electrons

whereas cathode is a negatively charged electrode which emits electrons. In tunnel
diode, n-type semiconductor emits or produces electrons so it is referred to as the
cathode. On the other hand, p-type semiconductor attracts electrons emitted from
the n-type semiconductor so p-type semiconductor is referred as the anode.

Tunnel diode is one of the most significant solid-state electronic devices which
have made their appearance in the last decade. Tunnel diode was invented in 1958
by Leo Esaki.

Leo Esaki that if a semiconductor diode is heavily doped with impurities, it will
exhibit negative resistance means the current across the tunnel diode decrease
when the voltage increases. In 1973 Leo Esaki received the noble prize in physics
for discovering electron tunneling effect used in this diode.

Tunnel diode is also known as Esaki diode which is named after Leo Esaki for his
work on the tunneling effect. The operation of tunnel diode depends on the
quantum mechanics principle known as “tunneling”. In electronics, tunneling
means a direct flow of electrons across the small depletion region from n-side
conduction band into the p-side valence band.

The germanium material is commonly used to make the tunnel diodes. They are
also made from other types of materials such as gallium arsenide, gallium
antimonite, and silicon.

2. Width of the depletion region tunnel diode

The depletion region is a region in a p-n junction diode where mobile charge
carriers (free electrons and holes) are absent. Depletion region acts like a barrier
that opposes the flow of electrons from the n-type semiconductor and holes from
the p-type semiconductor.

The width of a depletion region depends on the number of impurities added.

Impurities are the atoms introduces are the atoms introduced into the p-type and n-
type semiconductor to increase electrical conductivity.

If a small number of impurities are added to the p-n junction diode (p-type and n-
type semiconductor), a wide depletion impurities are added to the p-n junction
diode, a narrow depletion region is formed.
In tunnel diode, the p-type semiconductor is heavily doped which means a large
number of impurities are introduced into the p-type and n-type semiconductor. The
concentration of impurities in tunnel diode is 1000 times greater than the normal p-
n junction diode.

In normal p-n junction diode, the depletion width is large as compared to the tunnel
diode. This wide depletion layer or hence, depletion layer acts as a barrier. To
overcome this barrier, we need to apply sufficient voltage. When sufficient voltage
applied electric current starts flowing through the normal p-n junction diode.

Unlike the normal p-n junction diode, the width of a depletion layer in tunnel diode
is extremely narrow. So applying a small voltage is enough to produce electric
current in tunnel diode.

Tunnel diodes are capable of remaining stable for a long duration of time than the
ordinary p-n junction diode. They are also capable of high speed operations.

3. Concept of tunneling effect

Depletion region or depletion layer in a p-n junction diode is made up of positive

ions and negative ions. Because of these positive and negative ions, there exists a
built in potential or electric field in the depletion region. This electric field in the
depletion region exerts electric force in a direction opposite to that of the external
electric field (voltage).

Another thing we need to remember is that the valence band and conduction band
energy levels in the n-type semiconductor are slightly lower than the valence band
and conduction band energy levels in the p-type semiconductor. the difference in
the energy levels of the dopant atoms (donor and or acceptor atoms) used to form
the n-type and p-type semiconductor.

Electric current in ordinary p-n junction diode

When a forward bias voltage is applied to the ordinary p-n junction diode, the
width of depletion region decreases and at the same time the barrier height also
decreases. However, the electrons in the n-type semiconductor cannot penetrate
through the depletion layer because the built in voltage of depletion layer opposes
the flow of electrons.

If the applied voltage is greater than the built in voltage of depletion layer, the
electrons from n-side overcomes the opposing force from depletion layer and then
enters into p-side. In simple words, the electrons can pass over the barrier
(depletion layer) if the energy of the electrons is greater than the barrier height or
barrier potential.
Therefore, an ordinary
p-n junction
diode produces
electric current only
if the applied
voltage is greater than
the built in voltage of
the depletion
region.

Electric current in
tunnel diode

In tunnel diode, the valence band and conduction band energy levels in the
semiconductor are lower than the valence band and conduction band energy levels
in the p-type semiconductor. Unlike the ordinary p-n junction diode, the difference
in energy levels is very high in tunnel diode. Because of this high difference in
energy levels, the conduction band of the n-type material overlaps with the valence
band of the p-type material.

Quantum mechanics says that the electrons will directly penetrate through the
depletion layer or barrier if the depletion width is very small.
The depletion layer of tunnel diode is very small. It is in nanometers. So the
electrons can directly tunnel across the small depletion region from n-side
conduction band into the p-side valence band.

In ordinary diodes, current is produced when the applied voltage is greater than the
built-in voltage of the depletion region. But in tunnel diodes, a small voltage which
is less than the built in voltage of depletion region is enough to produce electric
current.

In tunnel diodes, the electrons need not overcome the opposing force from the
depletion layer to produce electric current. The electrons can directly tunnel from
the conduction band of n-region into the valence band of p-region. Thus, electric

Current is produced in tunnel diode.

4. Tunneling diode working phenomenon

4.1: unbiased tunnel diode

When no voltage is applied to the tunnel diode, it is said to be an unbiased tunnel

diode. In tunnel diode, the conduction band of the n-type material overlaps with the
valence band of the p-type material because of the heavy doping.
Because of this overlapping, the conduction band electrons at n-side and valence
band holes at p-side are nearly at the same energy level. So when the temperature
increases, some electrons tunnel from the conduction band of n-region to the
valence band of p-region. In a similar way, holes tunnel from the valence band of
p-region to the conduction band of n-region.

However, the net current flow will be zero because an equal number of charge
carrier (free electrons and holes) flow in opposite direction.

4.2: small voltage applied to the tunnel diode

When a small voltage is applied to the tunnel diode which is less than the built
voltage of the depletion layer, no forward current flows through the junction.

However, a small number of electrons in the conduction band of the n-region will
tunnel to the empty states of the valence band in p-region. This will create a small
forward bias tunnel current .thus, tunnel current starts flowing with a small
application of voltage.
4.3: applied voltage is slightly increased

When the voltage applied to the tunnel diode is slightly increased, a large number
of free electrons at n-side and holes at p-side are generated. Because of the increase
in voltage, the overlapping of the conduction band and valence band is increased.
In simple words, the energy level of an n-side conduction band becomes exactly
equal to the energy level of a p-side valence band.as a result, maximum tunnel
current flows.

4.4: applied voltage is further increased

If the applied voltage is further increased, a slight misalign of the conduction band
and valence band takes place

Since the conduction band of the n-type material and the valence band of the p-
type material sill overlap. The electrons tunnel from the conduction band of n-
region to the valence band of p-region and cause a small current flow. Thus, the
tunneling current starts decreasing.

4.5: applied voltage is largely increased

If the applied voltage is largely increased, the tunneling current drops to zero. At
this point, the conduction band and valence band no longer overlap and the tunnel
diode operates in the same manner as a normal p-n junction diode.
If this applied voltage is greater than built-in potential of the depletion layer, the
regular forward current starts flowing through the tunnel diode.

The portion of the curve in which current decreases as the voltage increases is the
negative resistance region of the tunnel diode. The negative resistance region is the
most important and most widely used characteristic of the tunnel diode.

A tunnel diode operating in the negative resistance region can be used as an

amplifier or an oscillator.

5. V-I Characteristics of Tunnel Diode

Due to forward biasing, because of heavy doping conduction happen in the diode.
The maximum current that a diode reaches is Ip and voltage applied is Vp. The
current Value decreases, when more amount of voltage is applied. Current keeps
decreasing until reaches a minimum value.
 V-I characteristics of a tunnel diode

The small minimum value of current is Iv. From above graph, it is seen that from
point A to B current reduces when voltage increases. That is negative resistance
region of diode. In this region tunnel diode produce power instead of absorbing it.

6. Advantages of tunnel diodes

●Long life

●High-speed operation

●Low noise

●Low power consumption

Disadvantages of tunnel diode

●Tunnel diode cannot be fabricate in large number

●Being a two terminal device the input and output are not isolated from one
another

7. Application of tunnel diode

●Due to the tunneling mechanism, it is used as an ultra-high speed switch.

●Due to the triple valued feature of its curve from current, it is used as a logic
memory storage device.

●Due to extremely small capacitance, inductance and negative resistance, it is used

as a microwave oscillator at a frequency about 10 GHz.

●Due to its negative resistance, it is used as a relaxation oscillator circuit.