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Electrical (EE2121)
Lecture on
Semiconductor: p-n junction
Khadijatul Kubra Assistant Professor,

EEE, KUET
Band Diagram:
Intrinsic semiconductor
Ec
Ef
Eg
Ev
Uniformly doped pn junction, in which one region of the semiconductor is
uniformly doped with acceptor atoms and the adjacent region is uniformly doped
with donor atoms.
The space charge region, the electric field,

Doping profile of an ideal uniformly doped pn junction. and the forces acting on the charged carriers.
Barrier potential
For Si Vbi=0.7 eV
For Ge Vbi=0.3ev
p n
anode cathode
Forward Bias: anode> + (higher potential)

cathode> - (lower potential)
Reverse Bias: anode> - (lower potential)

cathode> + (higher potential)
When the forward voltage exceeds the diodes
P-N junctions internal barrier voltage, which
for silicon is about 0.7 volts, avalanche occurs
and the forward current increases rapidly for
a very small increase in voltage producing a
non-linear curve. The “knee” point on the
forward curve.
When the diode is reversed biased the diode
blocks current except for an extremely small
leakage current, and operates in the lower left
quadrant of its I-V characteristic curves. The
diode continues to block current flow through
it until the reverse voltage across the diode
becomes greater than its breakdown voltage
point resulting in a sudden increase in reverse
current producing a fairly straight line
downward curve as the voltage losses control.
Avalanche Breakdown
The Avalanche Breakdown is a mechanism by which a PN junction breaks. The Avalanche breakdown
occurs in diode under reverse bias. The avalanche breakdown occurs because of the ionisation of electrons
and hole pairs.
The mechanism of avalanche breakdown occurs because of the reverse saturation current. The reverse bias
increases the electrical field across the depletion region. When the high electric field exists across the
depletion, the velocity of minority charge carrier crossing the depletion region increases. These carriers
collide with the atoms of the crystal. Because of the violent collision, the charge carrier takes out the
electrons from the atom.
The collision increases the electron-hole pair. As

the electron-hole induces in the high electric field, Free electron hits the
they are quickly separated and collide with the atom at high speed
other atoms of the crystals. The process is
continuous, and the electric field becomes so much
higher then the reverse current starts flowing in the
PN junction. The process is known as the
Avalanche breakdown. After the breakdown, the
junction cannot regain its original position because
the diode is completely burnt off.
New Electron hole

pair Generated
Diode Simplified Equivalent Circuit:
Diode Ideal Equivalent Circuit:

Load-Line Analysis:
Applying Kirchhoff’s voltage law

We now have a load line defined by the network and the characteristics defined by the
device. The point of interaction between the two is the point of operation (quiescent point)
for this circuit.
Summary:
•Semiconductors contain the properties in middle of conductors and insulators.
•Commonly used material for semiconductor is silicon.
•Semiconductors contain electrons and holes as charge carriers.
•The charge carriers in semiconductors are free to move throughout the device, so
they are called as mobile charge carriers.
•Holes are positively charged particles and electrons are negatively charged particles.
•Charge carriers are responsible for conducting electric current.

•Semiconductors are of two types namely intrinsic and extrinsic semiconductors.
•Intrinsic semiconductors are purest semiconductors as they don’t have any

impurities in it.
•Extrinsic semiconductors contain impurities called as dopants that change the

electrical properties of semiconductors.
•Extrinsic semiconductors are classified into two types. They are N-type and P-type.
•N-type impurities are called as donors because they contain electrons as majority
chare carriers.
•P-type impurities are called as acceptors because they contain holes as majority
charge carriers.
•PN junction is formed in a single crystal by joining two N-type and P-type semiconductors.
•PN junction diode is a two terminal device, the characteristics of diode depends on
the polarity of the external potential applied to the PN junction diode.
•The junction of N and P semiconductors is free of charge carriers; hence the region
is called as depletion region.
•The width of depletion region alters with the external applied potential.
•When no external potential is applied to PN junction, the condition is called as zero

bias. The junction potential for silicon diodes is 0.6V – 0.7V and for germanium
diodes is 0.3V.
•When the junction is biased in the forward direction, the majority carriers are attracted
towards the junction and get replenished at the junction. In this condition, width of the
depletion region decreases and with the increase in external potential diode acts as short
circuit that allows the maximum amount of current to flow through it.
•When the junction diode is biased in the reverse direction, the majority charge carriers are
attracted by the respective terminals away from the PN junction, thus avoiding the diffusion
of electrons and holes at the junction. There will be a small amount of current called as
leakage current due to minority charge carriers at the junction. This small current is called
as drift current. When the reverse bias potential is increased further the diode acts as open
circuit, thereby blocking the current to flow through it.
Sinusoidal Inputs: Half-Wave Rectification
Full-Wave Rectification:
Transistor:
Transistor Circuit as an Amplifier:

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Electrical (EE2121)

Semiconductor: p-n junction

Khadijatul Kubra Assistant Professor,

The space charge region, the electric field,

Forward Bias: anode> + (higher potential)

Reverse Bias: anode> - (lower potential)

The collision increases the electron-hole pair. As

New Electron hole

Diode Ideal Equivalent Circuit:

Applying Kirchhoff’s voltage law

•Commonly used material for semiconductor is silicon.

•Semiconductors contain electrons and holes as charge carriers.

•Charge carriers are responsible for conducting electric current.

•Intrinsic semiconductors are purest semiconductors as they don’t have any

•Extrinsic semiconductors contain impurities called as dopants that change the

•When no external potential is applied to PN junction, the condition is called as zero

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