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    WWW - Manaresults.Co - In: (Common To Eee, Ece, Cse, Eie, It, MCT)

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    pramod
    This document contains exam questions for a course on electronic devices and circuits. It is divided into two parts: Part A contains 10 short answer questions covering topics like the space charge region of a p-n junction, reverse bias of a p-n junction, peak inverse voltage, rectifier harmonics, transistor characteristics, capacitive coupling in amplifiers, thermal instability, pinchoff voltage, and transconductance. Part B contains 5 sections with two alternative questions in each section, worth 10 marks each. The questions cover topics like diode characteristics, filter circuits, rectifier circuits, transistor configurations, biasing circuits, FET models and configurations. Students must answer one question from each section.

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    WWW - Manaresults.Co - In: (Common To Eee, Ece, Cse, Eie, It, MCT)

    Uploaded by

    pramod
    47 views2 pages
    This document contains exam questions for a course on electronic devices and circuits. It is divided into two parts: Part A contains 10 short answer questions covering topics like the space charge region of a p-n junction, reverse bias of a p-n junction, peak inverse voltage, rectifier harmonics, transistor characteristics, capacitive coupling in amplifiers, thermal instability, pinchoff voltage, and transconductance. Part B contains 5 sections with two alternative questions in each section, worth 10 marks each. The questions cover topics like diode characteristics, filter circuits, rectifier circuits, transistor configurations, biasing circuits, FET models and configurations. Students must answer one question from each section.

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    final exam question

    Original Title

    113AU032017

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    This document contains exam questions for a course on electronic devices and circuits. It is divided into two parts: Part A contains 10 short answer questions covering topics like the space charge region of a p-n junction, reverse bias of a p-n junction, peak inverse voltage, rectifier harmonics, transistor characteristics, capacitive coupling in amplifiers, thermal instability, pinchoff voltage, and transconductance. Part B contains 5 sections with two alternative questions in each section, worth 10 marks each. The questions cover topics like diode characteristics, filter circuits, rectifier circuits, transistor configurations, biasing circuits, FET models and configurations. Students must answer one question from each section.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    47 views2 pages

    WWW - Manaresults.Co - In: (Common To Eee, Ece, Cse, Eie, It, MCT)

    Uploaded by

    pramod
    This document contains exam questions for a course on electronic devices and circuits. It is divided into two parts: Part A contains 10 short answer questions covering topics like the space charge region of a p-n junction, reverse bias of a p-n junction, peak inverse voltage, rectifier harmonics, transistor characteristics, capacitive coupling in amplifiers, thermal instability, pinchoff voltage, and transconductance. Part B contains 5 sections with two alternative questions in each section, worth 10 marks each. The questions cover topics like diode characteristics, filter circuits, rectifier circuits, transistor configurations, biasing circuits, FET models and configurations. Students must answer one question from each section.

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    of 2

    Code No: 113AU R13

    JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD


    B.Tech II Year I Semester Examinations, March - 2017
    ELECTRONIC DEVICES AND CIRCUITS
    (Common to EEE, ECE, CSE, EIE, IT, MCT)
    Time: 3 Hours Max. Marks: 75

    Note: This question paper contains two parts A and B.


    Part A is compulsory which carries 25 marks. Answer all questions in Part A.
    Part B consists of 5 Units. Answer any one full question from each unit.
    Each question carries 10 marks and may have a, b, c as sub questions.

    PART- A
    (25 Marks)
    1.a) Explain the Space charge region. [2]
    b) Explain the operation of p-n junction biased in the reverse direction. [3]
    c) Define Peak Inverse Voltage. [2]
    d) Explain the harmonic components in rectifier. [3]
    e) Write the complete expression for IC for any VC and IE. [2]
    f) Explain the basewidth modulation. [3]
    g) Why a capacitive coupling used to connect signal source to an amplifier. [2]
    h) Explain the thermal instability. [3]
    i) What is Pinchoff Voltage? [2]
    j) Define transconductance gm and drain resistance of a FET. [3]

    PART-B
    (50 Marks)
    2.a) Explain about the Current components in a p-n diode.
    b) Sketch the piecewise linear characteristics of a diode. What are the approximate cutin
    voltages for silicon and germanium? [5+5]
    OR
    3.a) Obtain the static and dynamic resistances of the p-n junction germanium diode, if the
    temperature is 270 C and Io=1μA for an applied forward bias of 0.2 V.
    Assume =1.38×10-23 J/ok.
    b) Define diffusion and transition capacitance of p-n junction diode. Prove that diffusion
    capacitance is proportional to current I. [5+5]

    4.a) Explain about L section Filters.


    b) A full-wave single phase rectifier employs a pi- section filter consisting of two 4 μF
    capacitances and a 20 H choke. The transformer voltage to the center tap is 300 V rms.
    The load current is 500 mA. Calculate the dc output voltage and the ripple voltage.
    The resistance of the choke is 200Ω. [5+5]
    OR
    5.a) Draw and explain the Thevenin’s model for Full-wave rectifier.
    b) Explain the Voltage regulation using Zener Diode. [5+5]

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    6.a) Differentiate between NPN and PNP transistors.
    b) Explain the input and output characteristics of the transistor in CC configuration with
    diagrams. How do you obtain from these? [3+7]
    OR
    7.a) Draw the circuit diagram of a pnp junction transistor in CE configuration and describe
    its characteristics.
    b) Compare CB and CC configurations. [5+5]

    8.a) Explain the DC and AC load Line analysis.


    b) Draw and explain the Fixed Bias Circuit. Explain why the circuit is unsatisfactory if
    the transistor is replaced by another of same type. [5+5]
    OR
    9.a) Draw and explain the Voltage Divider Biasing.
    b) Explain the Thermal runaway. [5+5]

    10.a) Explain the JFET Small signal Model.


    b) Explain the MOSFET characteristics in enhancement mode. [5+5]
    OR
    11.a) Explain the FET Common Drain Amplifier.
    b) A P-channel FET has VP = 4V and IDSS = 12mA. For the figure, determine RD and RS
    so that ID=4 mA and VDS=6V. VDD is 12 V. [5+5]

    ---ooOoo---

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