Analog Electronics
Analog Electronics
Analog Electronics
SCIENCES
(Approved by the AICTE, New Delhi and affiliated to JNTU, Hyderabad)
Kistapur Hamlet of Medchal, Hyderabad, Medchal Dist. - 501 401
ASSIGNMENT-I
BRANCH : EEE
YEAR & SEM :II- I Sem TIME:
SUB : ANALOG ELECTRONICS MAX. MARKS :75 Marks
PART-A 25 marks
Answer all the questions
1.
a. Define drift current? [2]
b. Explain about forward bias of diode? [3]
c. Define Transistor? [2]
d. What are the merits of full wave rectifier? [3]
e. Define early effect or base width modulation? [3]
f. Why biasing is necessary in BJT amplifiers? [2]
g. Define benefits of H-Parameter.[Nov-Dec 2017] [3]
h. What do you mean by clipper? [2]
i. What is the bypass capacitor & why it is connected in CE Amplifier? [3]
[May 2016]
j. How many types of clampers are there? [2]
PART-B 50 marks
2. a) Explain the concept of dc load line with the help of neat diagram? [5+5]
b) With neat circuit diagram explain the input and output characteristics of BJT
in CC configuration.
OR
3. Draw the circuit of an emitter follower, and derive the expressions for AI, AV, [10]
RI, RO in terms of CE parameters. [May-2017]
b) Draw the circuit of a half-wave-rectifier and find out the ripple factor, % [5+5]
regulation? Efficiency and PIV?
OR
5. Explain the operation of p-n junction diode under forward and Reverse bias
conditions and Sketch the V-I characteristics.
[10]
OR
b) Describe the significance of the terms, ‘α’ and ‘β’. Establish a relation
between them? [5+5]
8. Draw the self-bias circuit and obtain the expression for the stability [10]
OR
10. a) Draw the circuit diagram & small signal equivalent of CB amplifier using [5+5]
accurate h-parameter model. Derive expressions for AV, AI, Ri and R0?
b) Determine the values of IC and IE for a transistor with αdc = 0.99 and
OR
11. a) Design an Emitter bias circuit using silicon transistor to achieve a stability
factor of 20, with the following specifications: VCC = 16V, VBE = 0.7V, VCEQ
= 8V, ICQ = 4 mA & β= 50. [5+5]