1978 RCA Power Devices

RCA
Power Devices
This DAT ABOOK contains com- Table of Contents Page
plete technical information on the
full line of RCA solid-state power Index to Devices . 3
devices: power transistors, rf power Power-Transistor Selection Charts 8
transistors, power hybrid circuits,
triacs, SCR's, diacs, silicon rectifiers, Audio Transistors . . . . . . 17
and rectifier assemblies. A complete Power Hybrid Comparison Chart. 18
index of these types is included on RF Power Transistors Selection Charts i9
the following pages. Triac Product Matrix 20
The index to devices is followed SCR Product Matrix 23
by a series of product selection
ITR Product Matrix. 24
charts that provide a quick re-
ference to key parameters and de- GTO Product Matrix 25
vice packages to facilitate type se- Diac Product Matrix 25
lection. A cross-reference guide then Rectifier Product Matrix 25
indicates recommended RCA re- Power-Devices Cross-Reference Guide. 26
placements for more than 2000 Operating Considerations. . . . . 46
popular industry types. Next, gener-
al operating considerations for solid- Terms and Symbols. . . . . . . . 50
state power devices are discussed, Power Transistors - Technical Data 53
and symbols and special terms used RF Power Transistors - Technical Data 417
to characterize these devices are Power Hybrid Circuits - Technical Data. 451
listed. Triacs - Technical Data . . . . . . . 457
The DA T ABOOK also contains
eight data sections that provide de- Silicon Controlled Rectifiers - Technical Data 513
tailed ratings and characteristics for Gate-Tum-off SCR's (GTO's) - Technical Data 569
each of the various types of devices. Diacs - Technical Data . . . . . . . . . 572
Data pages for individual devices are Rectifiers - Technical Data. . . . . . . . 575
given as nearly as possible in alpha- RCA High-Reliability Solid-State Power Devices. 579
numerical sequence of the basic Appendix:
family type numbers. Because many
devices may be included in the same General Characteristics, Test Circuits, and Waveforms. 586
basic family, individual type nurn- Dimensional Outlines . . . . . . . . . . . 595
bers are not necessarily in sequence. Suggested Hardware and Mounting Arrangements 603
If you don't find a type number Lead Forms for RCA Plastic Power Packages . 606
where you expect it to be, check Handling and Mounting of RCA Molded-Plastic
the Index to Devices.
General information such as test
Transistors and Thyristors . . . . . . . 609
circuits and waveforms, dimensional Application-Note Abstracts. . . . . . . . 613
outlines, suggested mounting ar- RCA Sales Offices, Manufacturers' Representatives, and
rangements, and lead forms for Authorized Distributors . . . . . . . . . . . . 617
plastic packages are included in an
Appendix at the back of the book.
The Appendix also includes ab-
stracts of relevant RCA application
notes. The final pages contain listings
of RCA sales offices, manufacturers'
representatives, and authorized dis-
tributors. nell ~g:~1 Brussels' Buenos Aires' Hamburg' Madrid' Mexico City' Milan
Montreal' Paris' Sao Paulo' Somerville NJ • Stockholm
Sunbury·on·Thames • Taipei' Tehran' Tokyo
Information furnished by. RCA is believed to be accurate and reliable.
However, no responsibility is .assumed by RCA for its use; nor for 'any
infringements of patents or other rights of third parties which may result
from its uSe. No license is granted by implication or otherwise under any
patent or patent rights of RCA. .
Copyright 1978 by RCA Corporation

(All rights reserVed under Pan·AmerlcllIl
Copyright Convention)
Trade~ark(s) ® Registered
Marca(s) Registrada(s)
Printed In USA!7·78
2 ____________________________~----------------__------------__--------
Index to Devices
Type of Bulletin Type of Bulletin Type of Bulletin
Type No. Page Device File No. Type No. Page Device File No. Type No. Page Device File No.
lN248C 576 R 6 2N1479* 60 PT 135 2N3651 564 SCR 408
lN249C 576 R 6 2N1480* 60 PT 135 2N3652 564 SCR 408
lN250C 576 R 6 2N1481 * 60 PT 135 2N3653 564 SCR 408
lN1183A 576 R 38 2N1482* 60 PT 135 2N3654 564 SCR 724
1Nl184A 576 R 38 2N1483* 65 PT 137 2N3655 564 SCR 724
lNl186A 576 R 38 2N1484 * 65 PT 137 2N3656 564 SCR 724
lN1187A 576 R 38 2N1485* 65 PT 137 2N3657 564 SCR 724
lNl188A 576 R 38 2N1486* 65 PT 137 2N3658 564 SCR 724
1Nl189A 576 R 38 2N1487* 67 PT 139 2N3668 541 SCR 116
lNl190A 576 R 38 2N1488* 67 PT 139 2N3669 541 SCR 116
1N1195A 576 R 6 2N1489* 67 PT 139 2N3670 541 SCR 116
1Nl196A 576 R 6 2N1490* 67 PT 139 2N3715 99 PT 1058
lN1197A 576 R 6 2N1613 54 PT 106 2N3716 99 PT 1058
1Nl198A 576 R 6 2N1700 60 PT 141 2N3733 425 RF 72
1Nl199A 576 R 20 2N1701 65 PT 141 2N3771* 101 PT 974
1N1200A 576 R 20 2N1702 67 PT 141 2N3772* 101 PT 974
lN1202A 576 R 20 2N1711 54 PT 26 2N3773 105 PT 526
lN1203A 576 R 20 2N1842A 556 SCR 28 2N3791 109 PT 1059
1N1204A 576 R 20 2N1843A 556 SCR 28 2N3792 109 PT 1059
lN1205A 576 R 20 2N1844A 556 SCR 28 2N3839 426 RF 229
1N1206A 576 R 20 2N1845A 556 SCR 28 2N3866* 427 RF 80
lN1341B 576 R 58 2N1846A 556 SCR 28 2N3870 553 SCR 578
lN1342B 576 R 58 2N1847A 556 SCR 28 2N3871 553 SCR 578
1N1344B 576 R 58' 2N1848A 556 SCR 28 2N3872 553 SCR 578
1N1345B 576 R 58 2N1849A 556 SCR 28 2N3873 553 SCR 578
lN1346B 576 R 58 2N1850A 556 SCR 28 2N3878 111 PT 766
1N1347B 576 R 58 2N1893 54 PT 34 2N3879 111 PT 766
1N1348B 576 R 58 2N2102 54 PT 106 2N3896 553 SCR 578
lN3879 577 R 726 2N2270 54 PT 24 2N3897 553 SCR 578
1N3880 577 R 726 2N2405 54 PT 34 2N3898 553 SCR 578
lN3881 577 R 726 2N2857* 418 RF 61 2N3899 553 SCR 578
1N3882 577 R 726 2N2876 419 RF 32 2N4012 428 RF 90
lN3883 577 R 726 2N3053 54 PT 960 2N4036 115 PT 216
lN3889 577 R 727 2N2053A 54 PT 960 2N4037 115 PT 216
lN3890 577 R 727 2N3054 69 PT 527 2N4063 84 PT 64
1N3891 577 R 727 2N3055 73 PT 994 2N4064 84 PT 64
1N3892 577 R 727 2N3055 77 PT 1077 2N4101 523 SCR 114
lN3893 577 R 727 (Hometaxial) 2N4102 523 SCR 114
1N3899 578 R 728 2N3228 523 SCR 114 2N4103 541 SeR 116
1N3900 578 R 728 2N3229* 420 RF 50 2N4231A 118 PT 1102
lN3901 578 R 728 2N3263 82 PT 54 2N4232A 118 PT 1102
lN3902 578 R 728 2N3264 82 PT 54 2N4233A 118 PT 1102
1N3903 578 R 728 2N3265 82 PT 54 2N4240 96 PT 138
1N3909 578 R 729 2N3266 82 PT 54 2N4314 115 PT 216
lN3910 578 R 729 2N3375* 421 RF 386 2N4347 91 PT 528
1N3911 578 R 729 2N3439* 84 PT 64 2N4348 105 PT 526
1N3912 578 R 729 2N3440* 84 PT 64 2N4427 429 RF 228
lN3913 578 R 729 2N3441* 87 PT 529 2N4440* 430 RF 217
2N681 556 SCR 96 2N3442* 91 PT 528 2N4904 121 PT 1068
2N682* 556 SCR 96 2N3478 423 RF 77 2N4905 121 PT 1068
2N683* 556 SCR 96 2N3525 523 SCR 114 2N4906 121 PT 1068
2N684* 556 SCR 96 2N3528 523 SCR 114 2N4913 123 PT 1067
2N685* 556 SCR 96 2N3529 523 SCR 114 2N4914 123 PT 1067
2N686 556 SCR 96 2N3553* 421 RF 386 2N4915 123 PT 1067
2N687* 556 SCR 96 2N3583 96 PT 138 2N4932 431 RF 249
2N688* 556 SCR 96 2N3584* 96 PT 138 2N4933 431 RF 249
2N689* 556 SCR 96 2N3585* 96 PT 138 2N5038* 125 PT 698
2N690* 556 SCR 96 2N3600 424 RF 83 2N5039* 125 PT 698
2N697 54 PT 16 2N3632 421 RF 386 2N5050 130 PT 1098
2N699 54 PT 22 2N3650 564 SCR 408 2N5051 130 PT 1098
___________________________________________________________________ 3
Index to Devices
2N5052 130 PT 1098 2N5782 158 PT 413 2N6251 204 PT 523
2N5070 432 RF 268 2N5783 158 PT 413 2N6253 77 PT 1077
2N5071* 433 RF 269 2N5784 158 PT 413 2N6254 77 PT 1077
2N5090 434 RF 270 2N5785 158 PT 413 2N6257 101 PT 974
2N5102 435 RF 279 2N5786 158 PT 413 2N6259 105 PT .526
2N5109* 436 RF 281 2N5806 503 TRI 913 2N6260 69 PT 527
2N5179 437 RF 288 2N5807 503 TRI 913 2N6261 69 PT 527
2N5180 439 RF 289 2N5808 503 TRI 913 2N6262 91 PT 528
2N5202 111 PT 766 2N5809 503 TRI 913 2N6263 87 PT 529
2N5239 132 PT 321 2N5838* 162 PT 410 2N6264 87. PT 529
2N5240 132 PT 321 2N5839* 162 PT 410 2N6282 207 PT 1001
2N5293 135 PT 322 2N5840* 162 PT 410 2N6283 207 PT 1001
2N5294 135 PT 322 2N5869 165 PT 1070 2N6284 207 PT 1001
2N5295 135 PT 322 2N5870 165 PT 1070 2N6285 207 PT 1001
2N5296 135 PT 322 2N5871 167 PT 1066 2N6286 207 PT 1001
2N5297 135 PT 322 2N5872 167 PT 1066 2N6287 207 PT iOOl
2N5298 135 PT 322 2N5873 167 PT 1066 2N6288 190 PT 676
2N5301 139 PT 1029 2N5874 167 PT 1066 2N6289 190 PT 676
2N5302 139 PT 1029 2N5875 169 PT 1065 2N6290 190 PT 676
2N5303 139 PT 1029 2N5876 169 PT 1065 2N6291 190 PT 676
2N5320 142 PT 325 2N5877 169 PT 1065 2N6292 190 PT 676
2N5321 142 PT 325 2N5878 169 PT 1065 2N6293 190 PT 676
2N5322 142 PT 325 2N5879 171 PT 1064 2N6300 2.10 PT 1095
2N5323 142 PT 325 2N5880 171 PT 1065 2N6301 210 PT 1095
2N5415* 145 PT 336 2N5881 171 PT 1065 2N6306 212 PT 885
2N5416* 145 PT 336 2N5882 171 PT 1065 2N6307 212 PT 885
2N5441 503 TRI 593 2N5885 173 PT 1041 2N6308 212 PT 885
2N5442 503 TRI 593 2N5886 173 PT 1041 2N6312 118 PT 1102
2N5443 503 TRI 593 2N5913 440 RF 423 2N6313 118 PT 1102
2N5444 503 TRI 593 2N5954 175 PT 675 2N6314 118 PT 1102
2N5445 503 TRI 593 2N5955 175 PT 675 2N6326 215 PT 1040
2N5446 503 TRI 593 2N5956 175 PT 675 2N6327 215 PT 1040
2N5490 148 PT 353 2N6032 180 PT 462 2N6342A 493 TRI 1084
2N5491 148 PT 353 2N6033 180 PT 462 2N6343A 493 TRI 1084
2N5492 148 PT 353 2N6055 217 PT 563 2N6344A 493 TRI 1084
2N5493 148 PT 353 2N6056 217 PT 563 2N6345A 493 TRI 1084
2N5494 148 PT 353 2N6077 183 PT 492 2N6346A 493 TRI 1084
2N5495 148 PT 353 2N6078 183 PT 492 2N6347A 493 TRI 1084
2N5496 148 PT 353 2N6079 183 PT 492 2N6348A 493 TRI 1084
2N5497 148 PT 353 2N6098 187 PT 485 2N6349A 493 TRI 1084
2N5567 480 TRI 457 2N6099 187 PT 485 2N6354 125 PT 582
2N5568 480 TRI 457 2N6100 187 PT 485 2N6371 77 PT 1077
2N5569 480 TRI 457 2N6101 187 PT 485 2N6372 175 PT 675
2N5570 480 TRI 457 2N6102 187 PT 485 2N6373 175 PT 675
2N5571 480 TRI 458 2N6103 187 PT 485 2N6374 175 PT 675
2N5572 480 TRI 458 2N6106 190 PT 676 2N6383 217 PT 609
2N5573 480 TRI 458 2N6107 190 PT 676 2N6384 217 PT 609
2N5574 480 TRI 458 2N6108 190 PT 676 2N6385 217 PT 609
2N5575 151 PT 359 2N6109 190 PT 676 2N6386 221 PT 610
2N5578 151 PT 359 2N6110 190 PT 676 2N6387 221 PT 610
2N5632 154 PT 1094 2N6111 190 PT 676 2N6388 221 PT 610
2N5633 154 PT 1094 2N6211 * 197 PT 507 2N6394 546 SCR 891
2N5634 154 PT 1094 2N6212* 197 PT 507 2N6395 546 SCR 891
2N5671* 156 PT 383 2N6213* 197 PT 507 2N6396 546 SCR 89J
2N5672* 156 PT 383 2N6214 197 PT 507 2N6397 546 SCR 891
2N5754 461 TRI 414 2N6246 200 PT 677 2N6398 546 SCR 891
2N5755 461 TRI 414 2N6247 200 PT 677 2N6400 546 SCR 892
2N5756 461 TRI 414 2N6248 200 PT 677 2N6401 546 SCR 892
2N5757 461 TRI 414 2N6249 204 PT 523 2N6402 546 seR 89.2
2N5781 158 PT 413 2N6250 204 PT 523 2N6403 546 SCR 892
4 ___________________________________________________________________
Index to Devices
2N6404 546 SCR 892 2N6676 267 PT 1087 40631 276 PT 965
2N6420 224 PT 1100 2N6677 267 PT 1087 40634 Same as RCA 1A05
2N6421 224 PT 1100 2N6678 267 PT 1087 40635 Same as RCA 1A06
2N6422 224 PT 1100 40250,Vl 69 PT 112 40636 Same as RCA 1BOl
2N6465 175 PT 888 40251 77 PT 112 40814 Same as RCA 1A07
2N6466 175 PT 888 40280 443 RF 68 40815 Same as RCA 1A08
2N6467 175 PT 888 40290 444 RF 70 40829 175 PT 675
2N6468 175 PT 888 40291 444 RF 70 40830 175 PT 675
2N6469 200 PT 677 40292 444 RF 70 40831 175 PT 675
2N6470 200 PT 677 40310 270 PT 962 40850 278 PT 964
2N6471 200 PT 677 40311 270 PT 962 40851 278 PT 964
2N6472 200 PT 677 40312 270 PT 962 40852 278 PT 964
2N6473 190 PT 676 40313 270 PT 962 40854 278 PT 964
2N6474 190 PT 676 40314 270 PT 962 40871 281 PT 699
2N6475 190 PT 676 40316 270 PT 962 40872 281 PT 699
2N6476 190 PT 676 40317 270 PT 962 40894 447 RF 548
2N6477 227 PT 680 40318 270 PT 962 40895 447 RF 548
2N6478 227 PT 680 40319 270 PT 962 40896 447 RF 548
2N6479 230 PT 702 40321 270 PT 962 40897 447 RF 548
2N6480 230 PT 702 40322 270 PT 962 40910 69 PT 527
2N6486 233 PT 678 40323 270 PT 962 40911 69 PT 527
2N6487 233 PT 678 40324 270 PT 962 40912 87 PT 529
2N6488 233 PT 678 40325 270 PT 962 40913 87 PT 529
2N6489 233 PT 678 40327 270 PT 962 40936 448 RF 551
2N6490 233 PT 678 40340 445 RF 74 40964 449 RF 581
2N6491 233 PT 678 40341 445 RF 74 40965 449 RF 581
2N6496 125 PT 698 40346,Vl,V2 84 PT 211 40979 Same as RCA1Cl0
2N6500 111 PT 766 40347,Vl,V2 60 PT 88 40980 Same as RCA 1Cll
2N6510 235 PT 848 40348,Vl,V2 60 PT 88 41024 450 RF 658
2N6511 235 PT 848 40349,Vl,V2 60 PT 88 41500 190 PT 772
2N6512 235 PT 848 40360 Same as RCA1AOl 41501 190 PT 770
2N6513 235 PT 848 40362 270 PT 962 41502 54 PT 773
2N6514 235 PT 848 40363 270 PT 962 41503 115 PT 774
2N6530 238 PT 873 40366 54 PT 215 41504 276 PT 965
2N6531 238 PT 873 40367 60 PT 215 BD142 283 PT 701
2N6532 238 PT 873 40368 65 PT 215 BD181 285 PT 700
2N6533 238 PT 873 40369 67 PT 215 BD182 285 PT 700
2N6534 242 PT 874 40372 69 PT 527 BD183 285 PT 700
2N6535 242 PT 874 40373 87 PT 529 BD239,A,B,C 288 PT 669
2N6536 242 PT 874 40374 96 PT 138 BD240,A,B,C 288 PT 670
2N6537 242 PT 874 40375 111 PT 766 BD241,A,B,C 290 PT 671
2N6542 246 PT 1096 40385 84 PT 215 BD242,A,B,C 290 PT 672
2N6544 246 PT 1096 40389 54 PT 960 BD243,A,B,C 292 PT 673
2N6546 246 PT 1096 40390 84 PT 64 BD244,A,B,C 292 PT 674
2N6569 73 PT 994 40391 115 PT 216 BD277 294 PT 667
2N6594 73 PT 994 40392 54 PT 960 BD278,A 295 PT 969
2N6609 250 PT 1061 40394 115 PT 216 BD450 297 PT 1107
2N6648 253 PT 1013 40406 274 PT 219 BD451 297 PT 1107
2N6649 253 PT 1013 40407 274 PT 219 BD500,A,B 299 PT 1108
2N6650 253 PT 1013 40408 274 PT 219 BD501,A,B 299 PT 1108
2N6666 255 PT 1069 40409 274 PT 219 BD550,A,B 301 PT 1109
2N6667 255 PT 1069 40410 274 PT 219 BDX18 73 PT 994
2N6668 255 PT 1069 40411 274 PT 219 BDX33,A,B,C 307 PT 693
2N6669 258 PT 1071 40412, Vl, V2 84 PT 211 BDX34,A,B,C 307 PT 694
2N6670 441 PT 1091 40537 270 PT 320 BDX83,A,B,C 310 PT 955
2N6671 260 PT 1090 40538 270 PT 320 BDY29 313 PT 819
2N6672 260 PT 1090 40539 270 PT 303 BDY37 315 PT 863
2N6673 260 PT 1090 40594 Same as RCA1A03 BDY71 317 PT 859
2N6674 264 PT 1085 40595 Same as RCA 1A04 BFT19,A,B 319 PT 683
2N6675 264 PT 1085 40608 446 RF 356 BFT28,A,B 321 PT 815
___________________________________________________________________ 5
Index to Devices
BU106 323 PT 716 RCA1Al0 346 PT 651 RCPl17,B 383 PT 822
BU126 325 PT 968 RCA1All 346 PT 651 RCP131 A,B,C,D 386 PT 904
BU133 325 PT 968 RCA1A15 346 PT 651 RCP133A,B,C,D 386 PT 904
BU207 326 PT 1088 RCA1A16 346 PT 651 RCP135,B 386 PT 904
BU208,A 326 PT 1088 RCA1A17 346 PT 651 RCP137,B 386 PT 904
BUX16,A,B,C 329 PT 800 RCA1A18 346 PT 651 RCP700A,B,C,D 388 PT 821
BUX17,A,B,C 332 PT 818 RCA1A19 346 PT 651 RCP701 A,B,C,D 388 PT 820
BUX 18,A,B,C 335 PT 862 RCA1BOl 350 PT 647 RCP702A,B,C,D 388 PT 821
BUX66,A,B,C 337 PT 870 RCA1B04 351 PT 908 RCP703A,B,C,D 388 PT 820
BUX67,A,B,C 337 PT 871 RCA1B05 351 PT 908 RCP704,B 388 PT 821
Cl 06A,B,C,D ,E, 514 SCR 1005 RCA1B06 357 PT 648 RCP705,B 388 PT 820
F,M,O,Y RCA1B09 351 PT 908 RCP706,B 388 PT 821
Cl 07 A,B,C,D,E, 514 SCR 1005 RCA1C03 358 PT 652 RCP707,B 388 PT 820
F,M,O,Y RCA1C04 358 PT 652 RCS29,A,B,C 394 PT 880
Cl08A,B,C,D,E, 514 SCR 1005 RCA1C05 359 PT 644 RCS30,A,B,C 396 PT 881
F,M,O,Y RCA1C06 359 PT 644 RCS31,A,B,C 398 PT 882
CH2102 413 PT 632 RCA1C07 361 PT 646 RCS32,A,B,C 400 PT 883
CH2270 413 PT 632 RCA1C08 361 PT 646 RCS258 101 PT 974
CH3053 413 PT 632 RCA1Cl0 364 PT 642 RCS617 73 PT 994
CH3439 413 PT 632 RCA1Cll 364 PT 642 RCS618 73 PT 994
CH3440 413 PT 632 RCA1C12 358 PT 652 RCS683,A,B 392 PT 974
CH5320 413 PT 632 RCA1C15 367 PT 10lD RCS882 145 PT 781
CH5321 413 PT 632 RCA1C16 367 PT 1010 S106A,B,C,D,E, 517 SCR 966
CH5322 413 PT 632 RCAl E02 369 PT 653 F,M,O,Y
CH5323 413 PT 632 RCAl E03 369 PT 653 S107A,B,C,D,E, 517 SCR 966
CH6479 413 PT 632 RCA29,A,B,C 394 PT 583 F,M,O,Y
D2101S 535 R 522 RCA30,A,B,C 396 PT 584 S122A,B,C,D,E, 529 SCR 889
D2103SF 535 R 522 RCA31,A,B,C 398 PT 585 F,M,S
D2406A,B,C,D, 577 R 663 RCA32,A,B,C 400 PT 586 S2060A,B,C,D 520 SCR 654
F,M RCA41,A,B,C 402 PT 587 E,F,M,O,Y
D2412A,B,C,D, 577 R 664 RCA42,A,B,C 404 PT 588 S2061 A,B,C,D 520 SCR 654
F,M RCA120 408 PT 840 E,F,M,O,Y
D2520A,B,C,D, 578 R 665 RCA 121 408 PT 840 S2062A,B,C,D, 520 SCR 654
F,M RCA122 408 PT 840 E,F,M,O,Y
D2540A,B,D,F,M 578 R 580 RCA125 411 PT 841 S2600B,D,M 526 SCR 496
D2600M 535 R 839 RCA126 411 PT 841 S2610B,D,M 526 SCR 496
D2601 E,M 535 R 723 RCA410 370 PT 509 S2620B,D,M 526 SCR 496
D3202U,Y 574 D 577 RCA411 372 PT 510 S2710B,D,M 523 SCR 266
G4000A,B,D 570 SCR 1052 RCA413 374 PT 511 S2800A,B,C,D, 529 SCR 890
G4001A,B,D 570 SCR 1052 RCA423 376 PT 512 E,F,M,S
HC2000H 452 PH 566 RCA431 378 PT 513 S3700B,D,M 532 SCR 306
HC2500 452 PH 681 RCA1000 217 PT 594 S3701M 533 SCR 476
MAC15,A 496 TRI 1086 RCA100l 217 PT 594 S3702S 535 SCR 522
MJ2955 73 PT 994 RCA3054 135 PT 618 S3703SF 535 SCR 522
MJ15001 341 PT 1093 RCA3055 187 PT 618 S3704A,B,D,M,S 532 SCR 690
MJ15002 341 PT 1093 RCA3441 227 PT 666 S3705M 535 SCR 839
MJ15003 343 PT 1060 RCA3733 743 PT 1060 S3706E 535 SCR 839
MJ15004 250 PT 1060 RCA6263 227 PT 666 S3714A,B,D,M,S 532 SCR 690
RCA1AOl 346 PT 651 RCA8203A,B 255 PT 835 S3900M F,S,SF 538 ITR 938
RCA1A02 346 PT 651 RCA8350A,B 253 PT 861 S3901M,MF, S 538 ITR 938
RCA1A03 346 PT 651 RCA8638C,D,E 343 PT 1060 S3902DF 538 ITR 938
RCA1A04 346 PT 651 RCA8766A,B,C, 380 PT 973 S3903MF 538 ITR 938
RCA1A05 346 PT 651 D S5800B,C,D,E,M 544 SCR 1051
RCA1A06 346 PT 651 RCA9116C,D,E 250 PT 1061 S5801B,C,D,E,M 544 SCR 1051
RCA1A07 346 PT 651 RCP111A,B,C,D 383 PT 822 S5802B,C,D,E,M 544 SCR 1051
RCA1A08 346 PT 651 RCP113A,B,C,D 383 PT 822 S6000C,E,S 546 SCR 891
RCA1A09 346 PT 651 RCPl15,B 383 PT 822 S61 OOC, E,S 546 SCR 892
6 ___________________________________________________________________
Index to Devices
S6200A,B,D,M 549 SCR 418 T2327A,B,C,D, 466 TRI 1042 T6001 B,C,D, E, 490 TRI 1004
S6210A,B,D,M 549 SCR 418 E,F F,M
S6220A,B,D,M 549 SCR 418 T2500B,D 469 TRI 615 T6006B,C,D,E, 490 TRI 1004
S6230A,B,D,M 552 SCR 877 T2506B,D 512 TRI 406 M
S6240A,B,D,M 552 SCR 877 T2700B,D 471 TRI 351 T6401B,D,E,F,M 503 TRI 459
S6250A,B,D,M 552 SCR 877 T2706B,D 512 TRI 406 T6404B,D,E 507 TRI 487
S6400N 553 SCR 578 T2710B,D 471 TRI 351 T6405B,D,E 507 TRI 487
S6410N 553 SCR 578 T2716B,D 512 TRI 406 T6406B,D,E,M 512 TRI 406
S6420A,B,D,M,N 553 SCR 578 T2800A,B,C,D, 473 TRI 838 T6407B,D,E,M 512 TRI 406
S6430A,B,D,M,N 552 SCR 877 E,F,M T6411B,D,E,F,M 503 TRI 459
S6440A,B,D ,M,N 552 SCR 877 T2801 A,B,C,D, 473 TRI 837 T6414B,D 507 TRI 487
S6450A,B,D,M,N 552 SCR 877 E,F,M T6415B,D 507 TRI 487
S6493M 559 SCR 247 T2802B,C,D,E,M 473 TRI 838 T6416B,D,M 512 TRI 406
S7310B,C,D,E,M 561 SCR 975 T2806B,D 512 TRI 406 T6417B,D,M 512 TRI 406
S7410M 564 SCR 408 T2850A,B,D,E,F 473 TRI 540 T6420B,D,E,F,M 503 TRI 593
S7412M 564 SCR 724 T2851B,C,D,E 477 TRI 1083 T6421 B,D,E,F,M 503 TRI 459
S8610A,B,D,M 566 SCR 1020 T2856B,D 512 TRI 406 T6426B,D,M 512 TRI 406
S8611 A,B,D,M 566 SCR 1.020 T4100E,F,M 480 TRI 458 T6427B,D,M 512 TRI 406
SB612A,B,D,M 566 SCR 1020 T4101E,F,M 480 TRI 457 T6430B,D,E,F,M 486 TRI 878
S8613A,B,D,M 566 SCR 1020 T4103B,D,E,M 484 TRI 443 T6431 B,D,E,F,M 486 TRI 878
S8620A,B,D,M 566 SCR 1020 T4104B,D,E,M 484 TRI 443 T6440B,D,E,F,M 486 TRI 878
58621 A,B,D,M 566 SCR 1020 T4105B,D,M 484 TRI 443 T6441 B,D,E, F,M 486 TRI 878
S8622A,B,D,M 566 SCR 1020 T4106B,D,M 512 TRI 406 T6450B,D,E,F,M 486 TRI 878
S8623A,B,D,M 566 SCR 1020 T4107B,D,M 512 TRI 406 T6451B,D,E,F,M 486 TRI 878
SC149B,D,E,M 498 TRI 1082 T4110E,F,M 480 TRI 458 T8411B,D,E,F,M 509 TRI 725
SC151 B,D,E,M 498 TRI 1082 T4111E,F,M 480 TRI 457 T8421B,D,E,F,M 509 TRI 725
T2300A,B,D,F 458 TRI 911 T4113B,D,E,M 484 TRI 443 TIC236B,D 501 TRI 1078
T2301A,B,D,F 458 TRI 911 T4114B,D,E,M 484 TRI 443 TIC246B,D 501 TRI 1078
T2302A,B,D,F 458 TRI 911 T4115B,D,E,M 4B4 TRI 443 TIP29,A,B,C 394 PT 990
T2303F 461 TRI 912 T4116B,D,M 512 TRI 406 TIP30,A,B,C 396 PT 988
T2304B,D 464 TRI 441 T4117B,D,M 512 TRI 406 TIP31,A,B,C 398 PT 991
T2305B,D 464 TRI 441 T4120B,D,E,F,M 480 TRI 458 TIP32,A,B,C 400 PT 987
T2306A,B,D 512 TRI 406 T4121B,D,E,F,M 480 TRI 457 TIP41,A,B,C 402 PT 992
T2310A,B,D,F 458 TRI 911 T4126B,D,M 512 TRI 406 TIP42,A,B,C 404 PT 996
T2311A,B,D,F 458 TRI 911 T4127B,D,M 512 TRI 406 TIP47 406 PT 978
T2312A,B,D,F 458 TRI 911 T4130B,D,E,F,M 486 TRI 878 TIP48 406 PT 978
T2313A,B,D,F,M 461 TRI 912 T4131B,D,E,F,M 486 TRI 878 TIP49 406 PT 978
T2316A,B,D 512 TRI 406 T4140B,D,E,F,M 486 TRI 878 TIP50 406 PT 978
T2320A,B,C,D, 466 TRI 1042 T4141B,D,E,F,M 486 TRI 878 TIP120 408 PT 998
E,F T4150B,D,E,F,M 486 TRI 878 TIP121 408 PT \ 998
T2322A,B,C,D, 466 TRI 1042 T4151 B,D,E,F,M 486 TRI 878 TIP122 408 PT 998
E,F T4700B,D,E,F 488 TRI 300 TIP125 411 PT 997
T2323A,B,C,D 466 TRI 1042 T6DOOB,C,D,E, 490 TRI 1004 TIP126 411 PT 997
E,F F,M TIP127 411 PT 997
BR ; Bridge rectifier PH =Power hybrid circuit RF ; R F power transistor

D ; Diac PT =Power transistor SCR ; Silicon controlled rectifier
GTO ; Gate·tum-off SCR R = Rectifier TRI ; Triac
ITR ; I ntegrated thyristor Irectifier RA ; Rectifier assembly * JAN-type versions also available,
___________________________________________________________________ 7
Power Transistor Selection Charts
N·P·N SILICON POWER TRANSISTORS
Current Gain Sw. Times"
Type No. VCEO(SUS) hFE IC VCE PT
(Max.)
IC
(Max.)
fT tON tfI Package p·n·p
Complement
V A V W A MHz Ils
IC(Max.) = 0.15 to 1 A, fT = 3 to 25 MHz
40346 175 25 min. 0.010 10 10 1 15 - - TO·39 -
41505· 200 20 min. 0.050 10 20 1 21 - - Plastic TO·5 -
2N3440 250 4()'160 0.020 10 10 1 15 - - TO·39 2N5415
40412
TIP47
250'
250
40 min.
10min.
0.030
1
20
10
10
40
1
1
15
5
-
0.2
-
0.5
TO·39
TO·220AB
-
-
40321
TlP46
300'
300
25·200
10min.
0.020
1
10
10
5
40
1
1
15
5
-
0.2
-
0.5
TO·39
TO·220AB
-
-
2N3439
TlP49
350
350
4()'160
10min.
0.020
1
10
10
10
40
1
1
15
5
-
0.2
-
0.5
TO·39
TO·220AB
2N5416
-
TlP50 400 10min. 1 10 40 1 5 0.2 0.5 TO·220AB -
IC (Max.! = 0.15 to 1 A, fT = 50 to 100 MHz
41502 30 20 min. 0.150 10 3 1 60 TO·39·· 41503
2N3053 40 50·250 0.150 10 5 1 60 - - TO·39 2N4037
2N3053A 60 50·250 0.150 10 5 0.7 60 - - TO·39 -
2N2102 65 25 min. 0.500 10 5 1 60 30 nsal - TO·39 2N4036
-
--
RCP115 100 50 min. 0.025 10 6.25 0.150 BO TO·202AB -
RCPl17 100 20 min. 0.025 10 6.25 0.150 80 - TO·202AB -
--- - -
RCP111A 200 5()'3oo 0.025 10 6.25 0.150 80 TO·202AB
RCP113A
RCP111B
200
250
3()'150
5()'300
0.025
0.025
10
10
6.25
6.25
0.150
0.150
BO
BO
-- TO·202AB
TO·202AB
-
-
RCP113B 250 3()'150 0.025 10 6.25 0.150 BO - - TO·202AB ~
RCP115B 250 50 m.in. 0.025 10 6.25 0.150 BO - - TO·202AB -

RCPl17B 250 20 min. 0.025 10 6.25 0.150 BO - - TO·202AB -
RCPlllC 300 5()'3oo 0.025 10 6.25 0.150 BO - - TO·202AB -
RCP113C 300 3()'150 0.025 10 6.25 0.150 80 - - TO·202AB -
RCPll1D 350 5()'300 0.025 10 6.25 0.150 BO - - TO·202AB -
RCP113D 350 3()'150 0.025 10 6.25 0.150 BO - - TO·202AB -
IC (Max.) = 1.5 to 2 A, fT = 0.2 to 1.5 MHz
2N1479 40 2().60 0.200 4 5 1.5 1.4 1.2 1 TO·39
2N14Bl 40 35·100 0.200 4 5 1.5 1.4 1.2 1 TO·39 -
40347
2NI460
40
55
2()'150
2()'60
0.450
0.200
4
4
B.75
5
1.5
1.5
1.5
1.4
-
1.2
-
1
TO·39
TO·39
-
-
2Nl462 55 35·100 0.200 4 5 1.5 1.4 1.2 1 TO·39 -
4034B 65 10min. 1 4 B.75 1.5 1.5 - - TO·39 -
40349 140 10 min. 0.450 4 B.75 1.5 0.9 - - TO·39 -
IC (Max.) = 1.5 to 2 A, fT = 3 to 25 MHz
2N5050 125 5 2 5 40 2 25 0.3@ 1.2 TO·213MA
BUX67 150 10·150 1 5 35 2 10 3 3 TO·66 BUX66
2N5051 150 5 2 5 40 2 10 0.3@ 1.2 TO·213MA -
2N5052 200 5 2 5 40 2 10 0.3@ 1.2 TO·213MA -
2N35B4 250 B·BO 1 2 35 2 10 3 3 TO·66 2N6211
BUX67A 250 1()'150 1 5 35 2 10 3 3 TO·66 BUX66A
2N35B5 300 B·BO 1 2 35 2 10 3 3 TO·66 2N6212
2N4240 300 l()'loo 0.750 2 35 2 15 0.5 3 TO·66 -
BUX67B 300 1()'150 1 5 35 2 10 3 3 TO·66 BUX66B
BUX67C 350 1()'150 ·1 5 35 2 10 3 3 TO·66 BUX66C
IC (Max.) = 1.5 to 2A, fT = 50 to 100 MHz
RCP705 30 50min. 0.500 4 10 ;1 SO BQ ns BOO ns· TO·202AB RCP704
RCP707 30 20min. 0.500 4 10 2 50 80 ns BOO os· TO·202AB RCP706
RCP701A 40 50·250 0.500 4 10 2 50 80 ns BOO ns· TO·202AB RCP700A
RCP703A 40 3()'150 0.500 4 10 2 50 80 ns BOO ns· TO·202AB RCP702A
2N5321 50 40·250 0.500 4 10 2 50 80 ns BOO ns· TO·39 2N5323
2N6179 50 4()'250 0.500 4 25 2 50 BO ns BOO ns· Plastic TO·5 2N61Bl
2N6670
RCP701B
50
60
30
50-250
0.4
0.500
2
4
10
10
1.5
2
50
50
-
BO ns
-
BOO ns·
TO·202AB
TO·202AB
-
RCP700B
RCP703B 60 3()'150 0.500 4 10 2 50 BO os BOO ns· TO·202AB RCP702B
RCP705B 60 50min. 0.500 4 10 2 50 BO ns BOO ns· TO·202AB RCP704B
RCP707B 60 20 min. 0.500 4 10 2 50 BO ns BOO ns· TO·202AB RCP706B
2N55320 .75 3()'130 0.500 4 10 2 50 BO ns 800 ns· TO·39 2N5322
2N617B 75 3()'130 0.500 4 25 2 50 80 ns 800 ns· Plastic TO·5 2N6180
RCP701C BO 5()'250 0.500· 4 10 2 50 80 ns BOO ns· TO·202AB RCP700C
RCP703C BO 3()'150 0.500 4 10 2 50 80 ns BOO ns· TO·202AB RCP702C
RCA1A03
RCP701D
95"
100
70·300
5()'250
0.300
0.500
4
4
10
10
2
2
50
50
-
80 ns
-
800 ns·
TO·39
TO·202AB
RCA1A04
RCP700D
RCP703D 100 3()'150 0.500 4 10 2 50 BO ns 800 ns· TO·202AB RCP702D
"Measured at same current level as hFE unless otherwise indicated 'VCER(SUS)
·Check availability in Europe, the·Middle East, and Africa. Ii td + tr + tf
8 ______________________________________________ ~ ________________ ~ ______
N-P-N SILICON POWER TRANSISTORS (cont'd)
Current Gain Sw_ Times"
Type No_ VCEO(sUS)
V
hFE IC
A
VCE
V
PT
(Max.)
W
IC
(Max_)
A
fT
MHz
tON
I
JJ.S
tf Package p-n-p
Complement
IC (Max.) = 2_5 to 5A, fT = 0_2 to 2 MHz

2N1483 40 20-60 0.750 4 25 3 0.8 1.2 1.1 TO-8 -
2N1485 40 35-100 0.750 4 25 3 0.8 1.2 1.1 TO-8 -
2N5786 40 20-100 1.6 2 10 3.5 1 5° 15*0 TO-39 2N5783
2N5295 40 30-120 1 4 36 4 0.8 5 15* TO-220AB 2N6108
2N5296 40 30-120 1 4 36 4 0.8 5 15* TO-220AB 2N6109
2N6260 40 3min 4 2 29 3 0.8 - - TO-66 -
40250 40 25 min. 1.5 4 29 4 1 - - TO-66 2N5956
2N5785 50 20-100 1.2 2 10 3.5 1 5° 15*0 TO-39 2N5782
2N14B4 55 20-80 0.750 4 25 3 0.8 1.2 1.1 TO-8 -
2N1486 55 35-100 0.750 4 25 3 0.8 1.2 1.1 TO-8 -
2N3054 55 5 min. 3 4 25 4 0.8 - - TO-66 2N5955
RCA3054 55 5 min. 3 4 36 4 0.8 .- - TO-220AB -
BDY71 55 5 min. 3 4 29 4 0.8 - - TO-66 -
2N5297 60 20-80 1.5 4 36 4 0.8 5 15* TO-220AA 2N6106
2N529B 60 20-80 1.5 4 36 4 0.8 5 15* TO-220AB 2N6107
2N5784 65 20·100 1 2 10 3.5 1 5 15* TO·39 2N5781
2N5293 70 30-120 0.5 4 36 4 0.8 5 15* TO·220AA 2N6106
2N5294 70 30-120 0.5 4 36 4 0.8 5 15* TO-220AB 2N6107
2N6261 80 5 min. 4 2 50
200
4
20
0.8
2
-- -
-
TO·66
TO-204M A
-
RCA9116E
RCA8638E 100 10 7.5 2
RCAB638D 120 10 10 2 200 20 2 - - TO-204MA RCA9116D
2N6477 120 5 min. 2.5 4 50 2.5 0.2 - - TO·220AB -
2N6263 120 3 min. 3 2 20 3 0.2 - - TO·66 2N6468
RCA6263 120 20-150 0.5 4 36 3 0.2 - - TO·220AB -
2N4347 120 10min. 5 4 100 5 0.2 - - TD·3 2N6248
2N6478 140 5 min. 2.5 4 50
25
2.5
3
0.2
0.2
-- -
-
TO·220AB
TO·66
-
2N6468
2N3441 140 5 min. 2.7 4
RCA3441 140 20·150 0.5 4 36 3 0.2 - - TO·220AB -
RCA3773 140 5 16 4 150 20 2 - - TO·204MA 2N6609
RCA8638C 140 10 10 2 200 20 2 - - TO·204MA RCA9116C
MJ15OO3 140 10 10 2 250 20 2 - - TO·204MA MJ15004
2N6264 150 5 min. 3 2 50 3 0.2 - - TO·66 -
BU207 600 2.25 4.5 5 12.5
12.5
5
5
1
1
-- 0.6
0.6
TO·204MA
TO·204MA
-
-
BU208 700 2.25 4.5 5
BU208A 700 2.5 4.5 5 12.5 5 1 - 0.6 TO·204MA -
IC = 2.5 to 5 A, fT = 3 to 25 MHz
RCA29· 40 15·150 1 4 30 3 3 0.4 1.2" TO·220AB RCA30
RCA31· 40 25 min. 1 4 40 5 3 0.4 1.2* TO·220AB RCA32
RCS29· 40 15·150 1 4 30 3 3 0.4 1.2* TO·6!; RCS30
RCS31· 40 25 min. 1 4 40 5 3 0.4 1.2* TO·66 RCS32
TIP29 40 15·150 1 4 30 3 3 0.4 1.2* TO·220AB TIP30
TIP31 40 25 min. 1 4 40 5 3 0.4 1.2* TO·220AB TIP32
BD239 45 15 min. 1 4 30 4 3 - - TO-220AB BD240
BD241 45 25 min. 1 4 40 5 3 - - TO-220AB BD242
BD239A 60 15 min. 1 4 30 4 3 - - TO·220AB BD240A
BD241A 60 25 min. 1 4 40 5 3 - - TO-220AB BD242A
RCA29A· 60 15·150 1 4 30 3 3 0.4 1.2* TO-220AB RCA30A
RCA31A· 60 25 min. 1 4 40 5 3 0.4 1.2* TO-220AB RCA32A
TlP29A 60 15·150 1 4 30 3 3 0.4 1.2* TO·220AB TIP30A
TIP31A 60 25 min. 1 4 40 5 3 0.4 1.2* TO-220AB TIP32A
BD239B 80 15 min. 1 4 30 4 3 - - TO·220AB BD240B
BD241B BO 25 min. 1 4 40 5 3 - - TO·220AB BD242B
RCA29B· 80 15-150 1 4 30 3 3 0.4 1.2* TO·220AB RCA30B
RCA31B· 80 25 min. 1 4 40 5 3 0.4 1.2* TO·220AB RCA32B
TIP29B 80 15·150 1 4 30 3 3 0.4 1.2* TO·220AB TIP30B
TIP31B 80 25 min. 1 4 40 5 3 0.4 1.2* TO·220AB TIP32B
2N6465
2N6473
100
100
5 min.
2 min.
4
4
4
2.5
40
40
4
4
5
4
-
-
-
-
TO·66
TO·220AB
2N6467
2N6475
2N5869 60 4 5 4 87.5 5 4 0.7@ 0.8 TO-204MA -
2N5870 BO 4 5 4 87.5 5 4 0.7@ 0.8 TO-204MA -
BD239C 100 15 min. 1 4 30 4 3 - - TO-220AB BD240C
BD241C 100 25 min. 1 4 40 5 3 - - TO-220AB BD242C
RCA29C· 100 15-150 1 4 30 3 3 0.4 1.2* TO-220AB RCA30C
RCA31C· 100 25 min, 1 4 40 5 3 0.4 1.2* TO-220AB RCA32C
TIP29C 100 15·150 1 4 30 3 3 0.4 1.2* TO-220AB TlP30C
TIP31C 100 25 min. 1 4 40 5 3 0.4 1.2* TO-220AB TlP32C
"Measured at same current level as hFE unless otherwise indicated *tOFF
.Check availability in Europe, the Middle East, and Africa. OAt IC= lA
_______________________________________________________________________ 9
N·P·N SI LICON POWER TRANSISTORS (cont'd)
Current Gail'! Sw. Times·
Type No. VCEO(susl hFE: IC VCE PT Ie fT tON tf Package p·n-p
(Max.) (Max.) I. Complement
V A V W A MHz IAI
IC =2.5 to 5 A, fT" 3 to 25 MHz (cont'd)
-- ---
2N6466 120 5 min. 4 4 40 4 5 TO·66 2N6468
2N6474 120 2 min. 4 2.5 40 4 4 TO·220AB 2N6476
BUX16
2N5239
200
225
5 min.
5 min.
4.5
4.5
10
10
100
100
5
5
5
5
-
- -
TO·3
TO·3 ---
2N583B 250 8-40 3 2 100 3 5 0.86 0.4 to·3
8U133
BUX16A
250
250
1E1-B0
5 min.
1
4.5
5
10
80
100
3
5
3.5
5
-- 0.5
.,.
TO·3
TO·3
--
---
2N5839 275 10-60 2 3 100 3 5 0.67 0.35 TO·3
2N524O
2N6542
300
300
6 min.
7
4.5
3
10.
2
100
100
5
5
5
6
-
0.75
-
0.8
1'0·3
TO·204MA
BU126
BUX168
300
300
15·60
5min.
1
4.5
5
10
80
100
3
5
3.5
6
.,.
-
0.5
.,.
TO·3
TO·3
--
2N584O
BUXI6C
350
350
10-50
5 min.
2
4.5
3
10
100
100
3
5
Ii
5
0.67
-
0.36
.,.
TO·3
TO·3
--
IC" 2.5 to 5A, fT= 50 to 100 MHz
2N3878 50 20 min. 4 5 35 4 40 .,. .,. TO-66 .,.
2N5202 50 10-100 4 1.2 35 4 60 0.44 0.4 TO-66 .,.
2N65oo 90 2 35 4 60 0.44 0.5 TO·66 .,.
15·60 3
IC" 6to 10A, fT= 0.2 to 1 MHz
--
2NI487 40 16·46 1.5 4 75 6 0.8 .,. .,. TO·3
2N1489
2N6490
40
40
26·76
20-100
1.5
2
4
4
76
50
6
7
0.8
0.8
-
6 15*
TO·3
TO·220AB 2N6109
2N5491 40 20-100 2 4 60 7 0.8 6 16* TO·220AA 2N61 08
2N5494 40 20-100 3 4 50 7 0.8 5 16* TO·220AB 2N6109
2N5495 40 20-100 3 4 50 7 0.8 5 16* TO·220AA 2N61 08
B0278 45 15·75 4 4 76 10 0.8 .,. .,. TO·220AB -
2NI488 55 15·45 1.5 4 75 6 0.8 .,. .,. TO·3 -
2N1490
2N5492
55
56
26·15
20-100
1.5
2.5
4
4
76
50
6
7
0.8
O.B
-5 .,.
15*
TO·3
TO·220AB
-
2N6107
2N6493 55 20-100 2.5 4 50 7 0.8 6 15* TO·220AA 2N6106
2N3715
2N3716
60
80
5
5
10
10
4
4
150
150
10
10
25
26
.,.
.,.
.,.
.,.
TO·204MA
TO·204MA
--
2N609B
2N6099
60
60
5 min.
5min.
10
10
4
4
75
76
10
10
0.8
0.8
.,.
-
.,.
.,.
TO·220AA
TO·220AB
--
B0278A
2N6496
60
70
15·76
20-100
4
3.6
4
4
75
60
10
7
0.8
0.8
.,.
6
.,.
16*
TO·220AB
TO·220AB
-
2N61 07
2N6497 70 20-100 3.5 4 60 7 0.8 5 16* TO·220AA 2N6106
2N6100 70 20-80 6 4 76 10 0.8 .,. .,. TO·220AA .,.
2N6101 70 20-80 5 4 76 10 0.8 .,. .,. TO·220AB -
2N6632
2N4348
100
120
6
10 min.
10
10
2
4
160
120
10
10
1
0.2
-
.,.
.,.
.,.
TO·204MA -
TO·3 2N6248
2N6633 120 5 10 2 160 10 1 .,. .,.
TO·204MA -
2N5634 140 6 10 2 160 10 1 .,. .,. .TO·204MA -
2N3442 140 7.6 min. 10 4 117 10 0.8 .,. .,.
TO·3 -
2N6262
2N6078
160
250
6 min.
12·70
10
1.2
2
1
160
46
10 0.8 - .,. TO·3 .,.
.,.
7 1 0.32 0.3 TO·66
2N6077 276 12.70 1.2 1 45 7 1 0.32 0.3 TO·66 .,.
2N6079 350 12·60 1.2 1 46 7 1 0.32 0.3 TO·66 -
IC- 6 to 10 A, fT- 2.5 to 25 MHz
41600 25 25 min. 1 4 40 7 4 .,. .,. TO·220AB 41501
2N6288 30 2.3 min. 7 4 40 7 4 .,. .,. TO·220AB 2N8111
2N6289 30 2.3 min. 7 4 40 7 4 .,. .,. TO·220AA 2N6110
2N6374
RCA41·
40
40
5min.
15-160
6
3
4
4
.40
65
6
7
4
3
-
0.6-
.,.
1.4*-
TO·66
TO·220AB
2N6966
RCA42
TIP41 40 15-150 3 4 66 7 3 0.6- 1.4*- TO·220AB TIP42
B0243 46 16 min. 3 4 65 7 2 .,. .,. TO·220AB B0244
2N6290 60 2.3 min. 7 4 40 7 4 .,. .,. TO·220AB 2N61 09
2N6871
2N5878
60
80
4
4
10
10
4
4
160
150
10 .
10
20
20
.,.
.,.
.,.
.,.
T0204MA
TO·204MA
-
.,.
2N6671 300 10 6 3 160 8 15 0.8 TO·204MA .,.

0.8:
2N6672 350 10 6 3 160 8 16 0;8 TO·204MA .,.
0.8.
2N6673 400 10 6 3 160 8 16 0.8 0.8 TO·204MA .,.
2N6669
80243
30
45
20
16 min.
5
3
2
4
40
65
10
7
10
2
0.35
.,.
0.5
.,.
TO·220AB -
80244
TO·220AB
2N6290 60 2.3 min. 7 4 40 7 4 .,. .,. TO·220AB 2N6109
2N6291 60 2.3 min. 7 4 40 7 4 .:.. .,. TO·222AA 2N61 08
~heck availability In Europe, the Middle East, and Africa. .t

•Measured at seme current level al hFE unlees otherwise Indicated *tOFF
10 ____________________________________________________________
r
_
N-P-N SILICON POWER TRANSISTORS (cont'd)
Current Gain Sw. Times'"
Type No. VCEO(SUS)
V
hFE
A
IC
V
VCE PT
(Max.)
W
IC
(Max.)
A
fT
MHz
tON J
IlS
tf Package p-n-p
Complement
IC = 6 to 10 A, fT = 2.5 to 25 MHz (cont'd)

2N6373 60 5 min. 6 4 40 6 4 - - TO·66 2N5955
B0243A 60 15min. 3 4 65 7 3 - - TO-220AB B0244A
RCA41A'" 60 15-150 3 4 65 7 3 0.6- 1.4*- TO-220AB RCA42A
TlP41A 60 15-150 3 4 65 7 3 0.6- 1.4*- TO-220AB -
2N6292 70 2.3 min. 7 4 40 7 4 - - TO-220AB 2N6107
2N6293 70 2.3 min. 7 4 40 7 4 - - TO-220AA 2N6106
2N6372 80 5 min. 6 4 40' 6 4 - - TO-66 2N5954
B0243B 80 15min. 3 4 65 7 3 - - TO-220AB B0244B
RCA41B 80 15-150 3 4 65 7 3 0.6- 1.4*- TO-nOAB RCA42B
TIP41B 80 15-150 3 4 65 7 3 0.6- 1.4*- TO·220AB -
B0243C 100 15min. 3 4 65 7 3 - - TO-220AB B0244C
RCA41C 100 15-150 3 4 65 7 3 0.6- 1.4*- TO-220AB RCA42C
TIP41C 100 15-150 3 4 65 7 3 0.6- 1.4*- TO-220AB -
BU106 140 B min. 4 5 75 7 3 - 1.5 TO-3 -
BUX17 150 7 min. 10 3 150 10 2.5 2 1 TO-3 -
2N6249 200 10-50 10 3 175 10 8 0.8@ 0.5 TO-3 -
2N6510 200 10·50 3 3 120 7 3 0.8 0.5 TO-3 -
BUX18 200 7 min. 6 3 120 8 3 - 0.6' TO-3 -
RCA410 200 30 min. 1 5 125 7 4 0.35@ 0.15 TO-3 -
2N6306 250 15-75 3 5 125 8 5 0.6@ 0.4 TO-3 -
2N6511 250 10·50 4 3 120 7 3 0.8 0.5 TO-3 -
BUX17A 250 7 min. 10 3 150 10 2.5 2 1 TO-3 -
RCS579· 250 12min. 3 5 125 8 5 0.6@ 0.4 TO-3 -
2N6250 275 8-50 10 3 175 10 8 0.8@ 0.5 TO-3 -
BUX18A 275 7 min. 5 3 120 8 3 0.6' TO-3 -
2N6307 300 15-75 3 5 125 8 5 0.6@ 0.4 TO-3 -
2N6512 300 10-50 4 3 120 7 3 1.7 1.5 TO-3 -
2N6514 300 10-50 5 3 120 7 3 0.8 0.5 TO-3 -
2N6544 300 7. 5 2 125 8 6 1.05 1 TO-2D4MA -
BUX17B 300 7 min. 8 3 150 10 2.5 2 1 TO-3 -
RCA411 300 30-90 1 5 125 7 2.5 0.35@ 0.15 TO-3 -
RCAB767 300 8min. 6 3 175 10 20 0.4@ 0.3 TO-3 -
BUX18B 325 10min. 4 3 120 8 3 - 0.6' TO-3 -
RCA413 325 15min. 1 5 125 7 4 0.35@ 0.15 TO-3 -
RCA423 325 30-90 1 5 125 7 4 0.35@ 0.15 TO-3 -
RCA431 325 15-35 2.5 5 125 7 4 0.35@ 0.15 TO-3 -
2N6251 350 8-50 10 3 175 10 8 0.8@ 0.5 TO-3 -
2N6308 350 12-60 3 5 125 8 5 0.6@ 0.4 TO-3 -
2N6513 350 10-50 4 3 120 7 3 0.8 0.5 TO-3 -
BUX17C 350 7 min. 8 3 150 10 2.5 2 1 TO-3 -
BUX18C 375 10min. 4 3 120 8 3 - 0.6' TO-3 -
RCA8766 350 100 min. 6 3 150 10 10 - - TO-3 -
RCA8766A 350 100 min. 4 3 150 10 10 - - TO-3 -
RCA8767A 350 8 min. 6 3 175 10 20 0.4@ 0.3 TO-3 -
BUX18C 375 10min. 4 3 120 8 3 - 0.6' TO-3 -
RCA8766B 400 100 min. 6 3 150 10 10 - - TO-3 -
RCA8766C 400 100 min. 4 3 150 10 10 - - TO-3 -
RCA8767B 400 8 min. 6 3 175 10 20 0.4@ 0.3 TO-3 -
RCA87660 450 100 min. 6 3 150 10 10 - - TO-3 -
RCA8766E 450 100 min. 4 3 150 10 10 - - TO-3 -
IC= 6 to 10 A, fT = 50 to 100 MHz
2N3879 75 12-100 4 2 35 7 60 0.44 0.4 TO-66 -
2N6354 120 2 min. 10 2 140 10 80 1@ 0.2 TO-3 -
IC= 12 to 20 A, fT= 0.2 to 2 MHz
2N6102 40 5 min. 16 4 75 16 0.8 - - TO-nOAA -
2N6103 40 5 min. 16 4 75 16 0.8 - - TO-220AB -
2N6257 40 5min. 20 4 150 20 0.2 - - TO-3 -
2N6371 40 4min. 16 4 117 16 0.8 - - TO-3 2N6469
2N6569 40 5-100 12 4 100 12 1.5 1.9- 1.5- TO-3 2N6594
RCA41/SDH· 40 15min. 3 4 75 16 0.8 3.23@ 3.7*- TO-220AB -
2N6253 45 3min. 15 4 115 15 0.8 - - TO-3 -
B0142
B0181
45
45
12.5-160
20-70
4
3
4
4
117
117
15
15
0.8
0.8
-
-
-- TO-3
TO-3
-
-
2N3055(Hom.) 60 5 min. 10 4 115 15 0.8 - TO-3 - 2N6246
2N3772 60 5 min. 20 4 150 - 20 0.2 - TO-3 2N6246
B0182 60 20-70 4 4 117 - 15 0.8 - TO-3 -
-
. RCA3055 60 5 min. 10 4 75 15 0.8 - TO-220AB -
Measured at same current level
-
as hFE unless otherWIse ind,cated
______·~C~he~c~k~a~v~ai~la~b~iI~i~~in~E~u~r~o~pe_.~t_he__
M_id_d_le_E_a,~~~.~a~nd~A~fr~ic~a~._______
At IC = 6A 'At IC - 4A <!!It *tOFF
-_A_t_lc~=~2~A~_____________________________________ 11
N·P·N SILICON POWER TRANSISTORS (cont'd)
Current Gain Sw. Times"
Type No. VCEO(SUS) hFE Ie VCE PT
(Max.)
IC
(Max.)
fT tON I tf Package p-n·p
Complement
V A V W A MHz fJ.S
IC = 12 to 20 A. fT = 0.2 to 2 MHz (cont'd)
~g
2N5B81 4 15 4 160 15 4 TO·204MA 2N51:179
RCS25S· 5 min. 20 4 250 20 0.2 - - TO·3 -
40363 70· 20·70 4 4 115 15 0.7 - - TO·3 -
2N6254 80 5 min. 15 4 150 15 0.8 - - TO·3 -
RCS617 80 20 5 4 115 15 2.5 - - TO·204MA RCS618
2N5882 80 4 15 4 160 15 4 -- -- TO·204MA 2N58S0
80183 80 20-70 3 4 117 15 0.8 TO·3 -
RCA1801· 95· 20·70 4 4 115 15 0.8 - - TO·3 -
2N3773 120 5 min. 16 4 150 16 0.2 - - TO·3 -
BOY37
MJ15OO1
140
140
15·60
25
8
4
4
2
150
200
16
15
0.2
2
-- -- TO·3
TO·204MA
-
MJ15002
2N6259 150 10 min. 16 4 250 16 0.2 - - TO·3 -
IC = 12 to 20 A, fT = 2.5 to 25 MHz
2N6470 40 5 min. 15 4 125 15 5 - - TO·3 2N6469
2N6486
2N3055
40
60
5 min.
20·70
15
4
4
4
75
115
15
15
5
2.5
-
1.9-
-
1.5-
TO·220AB
TO·3
2N6489
MJ2955
2N6471
2N6487
60
60
5 min.
5 min.
15
15
4
4
125
75
15
15
5
5
-- -
-
TO·3
TO·220AB
2N6246
2N6490
2N6472 80 5 min. 15 4 125 15 5 - - TO·3 2N6247
2N6488 80 5 min. 15 4 75 15 5 - - TO·220AB 2N6491
RCS617 80 20-70 5 4 115 15 2.5 1.9- 1.5- TO·3 RCS618
2N6674 300 B 10 2 175 15 15 0.7 0.5 TO·204MA -
2N6676 300 8 15 3 175 15 15 - - TO·204MA -
RCA9113 300 15 min. 5 3 175 15 20 1.03" 0.75" TO·3/ -
TO·204MA
RCA9113A 350 ' 15min. 5 3 175 15 20 1.03* 0.76x TO·3/ -
TO·204MA
2N6677 350 S 15 3 175 15 15 - - TO·204MA -
2N6675 400 8 10 2 175 15 15 0.7 0.5 TO·204MA -
2N6678 400 8 15 3 175 15 15 - - TO·204MA -
RCA9113B 400 15 min. 3 3 175 15 20 1.03* 0.75" TO·3/ -
TO·204MA
IC= 12to 20 A, fT = 50 to 100 MHz
2N6479%- 60 20-300 12 2 87 12 100 -- - Radial- -
2N6481% 60 20-300 12 2 117 12 100 - Radial -
2N5039 75 20-100 10 5 140 20 60 0.5@ 0.5 TO·3 -
2N6480%- 80 20-300 12 2 87 12 100 - - Radial- -
2N6482% 80 20-300 12 2 117 12 100 - - Radial -
2N5038 90 20-100 12 5 140 20 60 0.5@ 0.5 TO·3 -
2N6496 110 12·100 8 2 140 15 60 0.5@ 0.5 TO·3 -
IC = 25 to 50 A, fT = 0.2 to 1 MHz
2N3771 40 5 min. 30 4 150 30 0.2 - TO·3 -
2N5301 40 5 30 3 200 30 2 2@
2@
1 TO·204MA -
2N5302 60 5 30 3 200 30 2 1 TO·204MA -
BOY29 75 15·60 15 2 220, 30 0.2 -
2@
- TO·3 -
2N5303 80 5 20 3 200 30 2 1 TO·204MA -
IC= 25 to 50 A, fT= 2.5 to 25 MHz
2N3264 60 20-80 15 3 125 25 20 0.5 0.5 Radial -
2N3266
2N5885
60
60
20-80
4
15
25
3
4
125
200
25
25
20
4
0.5
0.7@
0.5
0.8
TO·63
TO·204MA
--
2N6326 60 6 30 4 200 30 3 0.4~ 0.9* TO·204MA -
2N5886 80 4 25 4 200 25 4 0.7 0.8 TO·204MA -
2N6327 80 6 30 4 200 30 3 0.45 0.9* TO·204MA -
2N3263 90 25·75 15 3 125 25 20 0.5 0.5 Radial -
2N3265
2N6546
90
300
25·75
6
15
10
3
2
125
175
25
15
20
6
0.5
1.05
0.5
0.7
TO·63
TO·204MA
--
IC = 25 to 50 A, fT = 50 to 100 MHz
2N6032 90 10-50 50 2.6 140 50 50 1@ 0.5 Mod. TO·3 -
2N5671 90 20-100 15 2 140 30 50
~~
0.5 TO·3 -
2N6033 120 10-50 40 2 140 40 50 0.5 Mod. TO·3 -
2N5672 120 20-100 15 2 140 30 50 0.5 0.5 TO·3 -
IC;;;' 60 A, fT = 0.4 MHz
2N5575
2N5578
50
70
10-40
10-40
60
40
4
3
300
300
80
60
0.4
0.4
15
15
15
15
Mod. TO·3
Mod. TO·3
--
"Measured at same current level as hFE unless otherwise indicated eAt IC = 6A ,'At IC = 4A *tOFF @tr
.Check availability in Europe, the Middle East, and Africa. -At IC = 2A 'VCER(sus) x A tiC = lOA %Rad iation hardened
12
P-N-P SILICON POWER TRANSISTORS
Cu rrent Gain Sw_ Times'"
Type No_ VCEoIsusl
V
hFE IC
A
VCE
V
PT
IMax_1
W
IC
IMax-l
A
fT
MHz
tON
I
fJS
tf Package n-p-n
Complement
IC= -0_15 to -1 A, fT= 0.2 to 1 MHz

BFT28 -100 20 min. -0.010 -10 5 -1 25 - - TO-39 -
BFT19 -150 20 min. -0.050 -10 5 -1 25 - - TO-39 -
BFT28A -150 20 min. -0.010 -10 5 -1 25 - - TO-39 -
RCS880· -150 20-150 -0.050 -10 7.5 -1 15 - - TO-39 -
2N5415 -200 30-150 -0.050 -10 10 -1 15 - - TO-39 2N3440
BFT28B -200 20 min. -0.010 -10 5 -1 25 - - TO-39 -
BFT19A -250 20 min. -0.050 -10 5 -1 25 - - TO-39 -
BFT28C -250 20 min. -0.010 -10 5 -1 25 - - TO-39 -
RC881· -250 20min. -0.035 -10 7.5 -1 15 - - TO-39 -
2N5416 -300 30-120 -0.050 -10 10 -1 15 - - TO-39 2N3439
RCS882· -300 20 min. -0.035 -10 7.5 -1 15 - - TO-39 -
BFT19B -350 20 min. -0.050 -10 5 -1 25 - - TO-39 -
IC = -0.15 to -1 A, fT = 50 to 100 MHz
41503 -30 20 min. -0.150 -10 7 -1 60 - - TO-39 41502
2N4037 -40 50-250 -0.150 -10 7 -1 60 - - TO-39 2N3053
2N4036 -65 40-140 -0.150 -10 7 -1 60 0.11 0.1 TO-39 2N2102
2N4314 -65 50-250 -0.150 -10 7 -1 60 - - TO-39 -
IC = -1_5 to -2 A, fT = 2.5 to 25 MHz
BUX66 -150 10-150 -1 -5 35 -2 20 0.6~ 0.6 TO-66 BUX67
2N6211 -225 10-100 -1 -2.8 20 -2 20 0.6@ 0.6 TO-66 2N3584
BUX66A -250 10-150 -1 -5 35 -2 20 0.6@ 0.6 TO-66 BUX67A
2N6212 -300 10-100 -1 -3.2 20 -2 20 0.6@ 0.6 TO-66 2N3585
BUX66B -300 10-150 -1 -5 35 -2 20 0.6@ 0.6 TO-66 BUX67B
2N6213 -350 10-100 -1 -4 20 -2 20 0.6@ 0.6 TO-66 2N3585
BUX66C -350 10-150 -1 -5 35 -2 20 0.6@ 0.6 TO-66 BUX67C
2N6214 -400 10-100 -1 -5 20 -2 20 0.6@ 0.6 TO-66 -
IC = -1.5 to -2 A, fT = 50 to 100 MHz
RCP704 -30 50 min. -0.5 -4 10 -2 50 0.1 I" TO-202AB RCP705
RCP706 -30 20 min. -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP707
RCP700A -40 50-250 -0_5 -4 10 -2 50 0.1 1* TO-202AB RCP70lA
RCP702A -40 30-150 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP703A
2N5323 -50 40-250 -0.5 -4 10 -2 50 0.1 1* TO-39 2N5321
2N6181 -50 40-250 -0.5 -4 25 -2 50 0.1 1* Plastic TO-5 2N6179
RCP700B -60 50-250 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP701B
RCP702B -60 30-150 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP703B
RCP704B -60 50 min. -0_5 -4 10 -2 50 0.1 1* TO-202AB RCP705B
RCP706B -60 20 min. -0.5 -4 10 -2 50 0_1 1* TO-202AB RCP707B
2N5322 -75 30-130 -0_5 -4 10 -2 50 0.1 1* TO-39 2N5320
2N6180 -75 30-150 -0_5 -4 25 -2 50 0.1 1* Plastic TO-5 2N6178
RCP700C -80 50-250 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP701C
RCP702C -80 30-150 -0_5 -4 10 -2 50 0.1 1* TO-202AB RCP703C
RCA1A04· -95' 50min. -0.1 -4 10 -2 50 - - TO-39 RCAIA03
RCP700D -100 50-250 -0.5 -4 10 -2 50 0.1 1* TO-202AB RCP7010
RCP702D -100 30-150 -0_5 -4 10 -2 50 0.1 1* TO-202AB RCP7030
IC = -2..5 to -5 A, fT = 2.5 to 25 MHz
2N4915 80 7 5 2 87.5 5 4 - - TO-204MA 2N4906
2N4914 60 7 5 2 87.5 5 4 - - TO-204MA 2N4905
2N4913 40 7 5 2 87.5 5 4 - - TO-204MA 2N4904
2N4904 -40 25 -2.5 -2 87.5 -5 4 - - TO-204MA 2N4913
2N5783 -40 4min. -3.2 -2 10 -3.5 8 0.50 2.5*0 TO-39 2N5786
RCA30· -40 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB RCA29
RCA32· -40 25 min. -1 -4 40 -5 3 0.2 1* TO-22DAB RCA31
RCS30· -40 15-150 -1 -4 30 -3 3 0_2 1* TO-66 RCS29
RCS32· -40 25 min. -1 -4 40 -5 3 0.2 1* TO-66 RCS31
TIP30 -40 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB TIP29
TIP32 -40 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB TIP31
B0240 -45 15 min. -1 -4 30 -4 3 - - TO-220AB B0239
B0242 -45 25 min. -1 -4 40 -5 3 - - TO-220AB B0241
2N5782 -50 4min. -3.2 -4 10 -3.5 8 0.50 2.5*0 TO-39 2N5785
2N4905 -60 25 -2.5 -2 87.5 -5 4 - - TO-204MA 2N4914
B0240A -60 15min. 3 -1 -4 30 -4 - - TO-220AB B0239A
BD242A -60 10min. 3 -3 -4 40 -5 - - TO-220AB B0241A
RCA30A· -60 15-150 3 -1 0.2 -41* 30 -5 TO-220AB RCA29A
RCA32A· -60 25 min. 3 -1 0.2 -41* 40 -5 TO-220AB RCA31A
RCS30A· -60 15-150 3 -1 0.2 -41* 30 -3 TO-66 RCS29A
'"Measured at same current level as h FE unless otherWIse indicated
'VCER(SUS) @t r *tOFF
·Check availability in Europe. the Middle East. and Africa.
OAt IC= lA
_______________________________________________________________________ 13
P-N-P SILICON POWER TRANSISTORS (Cont'd)
Current Gain Sw_ Times"
Type No_ VCEO(SUS)
V
hFE IC
A
VCE
V
PT
(Max.)
W
IC
(Max.)
A
fT
MHz
tON
I
Jls
tf Package n-p-n
Complement
IC = -2_5 to -5 A, fT = 2_5 to 25 MHz (cont'd)

RCS32A+ -60 25 min_ -1 -4 40 -5 3 0_2 1* TO-66 RCS31A
TIP30A -60 15-150 -1 -4 30 -3 3 0_2 1* TO-220AB TIP29A
TIP32A -60 25 min_ -1 -4 40 -5 3 0_2 1* TO-220AB TIP31A
2N5781 -65 20-100 -1 -2 10 -3_5 8 0_5 2_5* TO-39 2N5784
2N4906 -80 25 -2.5 -2 87.5 -5 4 - - TO-204MA 2N4915
B0240B -80 15 min. -1 -4 30 -4 3 - - TO-220AB B0239B
R0242B -80 25 min. -1 -4 40 -5 3 - TO-220AB B0241B
RCA30B+ -80 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB RCA29B
RCA32B+ -80 25 min. -1 -4 40 -5 3 0_2 1* TO-220AB RCA31B
RCS30B+ -80 15-150 -1 -4 30 -3 3 0_2 1* TO-220AB RCS29B
RCS32B+ -80 25 min. -1 -4 40 -5 3 0.2 1* TO-66 RCS31B
TIP30B -80 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB TIP29B
TIP32B -80 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB TIP31B
2N6467 -100 5 min. -4 -4 40 -4 -5 - - TO-66 2N6465
2N6475 -100 2 min. -2.5 -4 40 -4 10 - - TO-220AB 2N6473
B0240C -100 15 min. -1 -4 30 -4 3 - - TO-nOAB B0239C
B0242C -100 10min. -3 -4 40 -5 -3 - - TO-220AB B0241C
RCA30C+ -100 15-150 -1 -4 30 -3 3 0.2 1* TO-220AB RCA29C
RCA32C+ -100 25 min. -1 -4 40 -5 3 0.2 1* TO-220AB RCA31C
RCS30C+ --100 15-150 -1 -4 30 -3 3 0.2 1* TO-66 RCS29C
RCS32C -100 25 min. -1 -4 40 -5 3 0.2 1* TO-66 RCS31C
TIP30C -100 15-150 -1 -4 30 -3 3 0.2 1* TO-nOAB TIP29C
TIP32C -100 25 min, -1 -4 40 -5 3 0.2 1* TO-220AB TIP32C
2N6468 -120 5 min. -4 -4 40 -4 5 - - TO-66 2N6466
2N6476 -120 2 min. -4 -2.5 40 -4 10 - - TO-220AB 2N6474
IC = -6 to -10 A, fT = 2.5 to 25 MHz
41501 25 25 min. 1 4 40 7 10 TO-220AB 41500
2N6110 -30 2.3 min. -7 -4 40 -7 10 - - TO-nOAA 2N6289
2N6111 -30 2.3 min. -7 -4 40 -7 10 - - TO-220AB 2N6288
2N5956 -40 5min. -6 -4 40 -6 5 - - TO-66 2N6374
RCA42+ -40 15-150 -3 -4 65 -7 3 0.3- 0.7*- TO-220AB RCA41
B0244 -45 15min. -3 -4 65 -7 3 - - TO-220AB B0243
B0277 -45 30-150 -1.75 -2 70 -7 10 - - TO-220AB -
2N6108 -50 2.3 min. -7 -4 40 -7 10 - - TO-220AA 2N6291
2N6109 -50 2.3 min. -7 -4 40 -7 10 - - TO-220AB 2N6290
2N5955 -60 5min. -6 -4 40 -6 5 - - TO-66 2N6373
2N5875 -60 4 10 4 150 10 20 - TO-204MA -
B0244A -60 15min. -3 -4 65 -7 3 - - TO-220AB B0243A
RCA42A+ -60 15-150 -3 -4 65 -7 3 0.3- 0.7*- TO-220AB RCA41A
2N6106 -70 2.3 min. -7 -4 40 -7 10 - - TO-220AA 2N6293
2N6107 -70 2.3 min. -7 -4 40 -7 10 - - TO-220AB 2N6292
2N5954 -80 5 min. -6 -4 40 -6 5 - - TO-66 2N6372
2N5876 -80 4 10 4 150 10 20 - - TO-204MA -
B0244B -80 15min. -3 -4 65 -7 3 - - TO-220AB B0243B
HCA42B+ -80 15-150 -3 -4 65 -7 3 0.3- 0.7*- TO-nOAB RCA41B
2N6248 -100 5 min. -10 -4 125 -10 10 - - TO-3 -
B0244C -100 15min. -3 -4 65 -7 3 - - TO-220AB B0243C
RCA42C+ -100 15-150 -3 -4 65 -7 3 0.3- 0.7*- TO-220AB RCA41C
I C = -12 to -20 A, fT = 2 to 25 MHz
2N6469 -40 5 min. -15 -4 125 -15 5 - - TO-3 2N6470
2N6489 -40 5 min. -15 -4 75 -15 5 - - TO-nOAB 2N6486
2N6594 -40 5-100 -5 -4 100 -12 2.5 1.9- 1.5- TO-3 2N6594
2N5879 -60 4 15 4 160 15 4 - - TO-204MA 2N5881
2N6246 -60 5 min. -15 -4 125 -15 5 - - TO-3 2N6471
2N6490 -60 5 min. -15 -4 75 -15 5 - - TO-220AB 2N6487
BOX18 -60 20 -4 -4 115 -15 4 - - TO-204MA 2N3055
MJ2955 -60 20-70 -4 -4 115 -15 2_5 1.9- 1.5- TO-3 2N3055
2N6247 -80 5 min. -15 -4 125 -15 5 - - TO-3 2N6472
2N6491 -80 5 min. -15 -4 75 -15 5 - - TO-220AB 2N6488
RCS618 -80 20-70 -5 -4 115 -15 25 1.9- 1.5- TO-3 RCS617
2N5880 -80 4 15 4 160 15 4 - - TO-204MA 2N5882
RCA9116E -100 10 -7.5 -2 200 -20 2 - - TO-204MA RCA8638E
RCA91160 -120 10 -10 -2 200 -20 2 - - TO-204MA RCA86380
2N6609 -140 15 -8 -4 150 -16 2 - - TO-204MA RCA3773
MJ15004 -140 10 -10 -2 250 -20 2 - - TO-204MA MJ15003
MJ15002 -140 25 4 2 200 -15 2 - - TO-204MA MJ15001
RCA9116C -140 10 -10 -2 200 -20 2 - - TO-204MA RCA8638C
RCS618 -80 20 ·-5 -4 115 -15 2.5 - - TO-204MA RCS617
"Measured at same current level as hFE unless otherwise indicated eAt IC ~ 6A @t r *tOFF -At IC;= 2A
14 +Check availability in Europe, the Middle East, and Africa.
____________________________________________________________________ __
N·P·N MONOLITHIC DARLINGTON 'TRANSISTORS
Current Gain
VCEO(SUS) hFE IC VCE PT IC
Type No. (Male.) (M•• ) Package p·n·p
V A V W A Complement
IC (Male.) =4 A, fUNITY GAIN = 20 MHz for all types
RCS683 40 1000 min. 2 3 10 4 TO·39
--
RCS683A 60 1000 min. 2 3 10 4 TO·39
RCS683B 80 1000 min. 2 3 10 4 TO·39
IC (Max.) • 8 A, fUNITY GAIN" 20 MHz for all types
2N6055
2N6300
60
60
750-18,000
100
4
8
3
3 17~ 8
8
TO·3
TO·213MA -
RCAI20· 60 1000 min. 3 3 65 8 TO·220AB RCA125
TIP120 60 1000 min. 3 3 65 8 TO·220AB TIP126
RCA1000 60 1000 min. 3 3 90 8 TO·J -
2N6066 80 760-18,000 4 3 100 8 TO·J -
2N6301 80 100 8 3 75 8 TO·21JMA -
2N6630 80 1000-10,000 5 3 65 8 TO·220AB -
2N6634
RCAI21·
80
80
1000-10,000
1000 min.
6
3
J
3
36
65
8
8
TO·66
TO·220AB
-
RCA126
RCA1001
TIPI21·
80
80
1000 min,
1000 min.
3
3
3
3
90
66
8
8
TO·J
TO·220AB
-
TIP126
2N6631 100 500-10,000 3 3 65 8 TO·220A6 -
--
2N6532 100 1000-10,000 5 3 66 8 TO·220AB
2N6636 100 600-10,000 3 3 36 8 TO·66
2N6636
RCAI22·
100
100
1000·10,000
1000 min.
6
3
3
J
36
66
8
8
TO·66
TO·220AB
--
TIP122 100 1000 min. 3 3 66 8 TO·220AB TIP127
2N6633 120 1000-10,000 J J 65 8 TO·220AB -
2N6637 120 1000·10,000 3 3 36 8 TO·66 -
IC (Max.) =10 A, fUNITY GAIN =20 MHz for all types
2N6;j83 40 1000·20,000 5 3 100 10 TO·3 RCA8360
2N6386 40 1000-10,000 3 3 65 10 T0-220AB RCA8203
BDX33 46 750 min. 4 3 70 10 TO·220AB BDX34
BDX83 46 1000 min. 5 3 126 10 TO·J -
2N6384 60 1000-20,000 6 3 100 10 TO·3 RCA8360A
2N6387 60 1000-20,000 5 3 66 10 TO·220AB RCA8203A
BDX33A 60 750 min. 4 J 70 10 TO·220A8 BDX34A
BDXB3A
2N6385
60
80
1000 min.
1000·20,000
5
5
3
3
125
100
10
10
TO·J
TO·J
-
RCA8350B
2N6388 80 1000-20,000 5 3 65 10 TO·220AB RCA8203B
BDX33B 80 750 min. 3 3 70 10 TO·220AB RDX34B
BDX83B
BDX33C
80
100
1000 min.
750 min.
6
3
3
3
125
70
10
10
TO·J
TO·220AB
-
BDX34C
BDX8JC 100 1000 min. 5 3 125 10 TO·J -
BDX33D 120 750 min. 3 3 70 10 TO·220AB -
P..
N P MONOLITHIC DARLINGTON TRANSISTORS
Cur... nt Glin
VeEO(SU.' hFE Ie VeE Pr Ie
TYPI No. (Mlle.) (MIX.) Packagl n-pon
V A V W A Compllmlnt
Ie· -8 A, fUNITV GAIN • 20 MHz for III type.
~C~~~03
TIP126 .
RCAI26·
-~~
-60
-60
'=~:.o
1000 min.
-~
-3
-3
-~
-3
-3
:
66
-!!
-8
-8
~g:~~g~:
TO·220A8
2N_II_~.6
TIP120
RCA120
TIP126 -80 1000 min. -3 -3 66 -8 TO·220A8 TIP121
RCAI26· -80 1000 min. -3 -3 65 -8 TO·220A8 RCA121
TIP127 -100 1000 min, -3 -J 65 -8 TO·220A8 TIP122
tcheck availability In Europe, the Middle East, and Africa •
________________________ ~ ____________ ~ ___________________ 15

P·N·P MONOLITHIC DARLINGTON TRANSISTORS (cont'dl
Current Gain
VCEO(SUs) hFE Ie VeE Py Ie
Type No. (Max.) (Max.) Package n·p·n
V A V W A Complement
IC (Max.) =10 A. fUNITY GAIN =20 MHz for all types
2N6648 -40 1000,20,000 -3 -3 70 -10 TO·204MA 2N6383
2N6666 -40 1000 -3 -3 65 -I TO-220A6 2N6386
RCA8360 -40 1000-20,000 -5 -5 70 -10 TO·3 2N6383
BDX34 -45 750 min. -4 -3 70 -10 TO·22OAB BDX33
2N6649 -60 1000-20,000 -3 -3 70 -10 TO·204MA 2N6384
2N6667 -60 1000 -5 -3 65 -10 TO·220AB 2N6387
BDX34A -60 750 min. -4 -3 70 -10 . TO·220AB BDX33A
RCA8203A -60 1000-20,000 -5 -3 65 -10 TO·220A8 2N6387
RCA8350A -60 1000-20,000 -5 -3 70 -10 1'0·3 2N6384
2N6650 -80 1000-20,000 -3 -3 70 -10 TO·204MA 2N6385
2N6668 -80 1000 -5 -3 65 -10 TO·220AB 2N6388
BDX34B -80 750 min. -3 -3 70 -10 TO·220AB BDX33B
RCA8203B -80 1000-10,000 -5 -3 65 -10 TO·220AB 2N6388
RCA8350B -80 1000-20,000 -5 -3 70 -10 TO·3 2N6385
BDX34C -100 750 min. -3 -3 70 -10 TO·220AB BDX33C
16 ______________________________________________________________________
Transistors for Audio-Amplifier Applications
RCA or or PT
Types PNP PNP
Full Complementary Output Darlington Pairs Quasi Complementary Output Transistors (Cont'd)
-RCAl A03 NPN TO-39 70 0.3A/4V 95V lOW
2N6385 NPN TO-3 1000 5A/3V 80V 100W
RCA1A04 PNP TO-39 70 -0.3A/-4V -95V lOW
2N6650 PNP TO-3 1000 -5A/3V BOV 70W
RCA1A05 PNP TO-39 50 -·0.15A/-4V -75V 7W
BOX33 NPN To-no 750 4A/3V 100V 70W
RCA1A06 NPN TO-39 50 0.15A/4V 75V 5W
BOX34 PNP TO-220 750 --4A/-3V -100V 70W
RCAl BOl NPN TO-3 20 4A/4V 95V 115W
RCAl C15 PNP TO-220 1000 5A/3V 80V 65W
RCAl B04 NPN TO-3 15 2A/5V 200V 150W
RCA1C16 NPN To-no 1000 -5A/-3V -BOV 65W
RCAl B05 NPN TO-3 15 2A/5V 250V 150W
RCA900 PNP TO-3 1000 -5A/-3V -60V 90W
RCAl B06 NPN TO-3 10 4A/4V 100V 150W
RCA1000 NPN TO-3 1000 5A/3V 60V 90W
RCAl B09 NPN TO-3 40 2A/5V 250V 150W
TA9117 PNP TO-3 750 -10A/--3V -100V 160W
RCA1C03 NPN TO-220 50 lA/4V 100V 40W
TA9118 NPN TO-3 750 10A/3V 100V 160W
RCA1C04 PNP TO-220 50 --lA/-4V -100V 40W
Full Complementary Output Transistor Pairs RCA1C09 NPN TO-220 20 4A/4V 65V 75W
115W RCA1C12 NPN TO-220 40 lA/2V 120V 40W
2N3055 NPN TO-3 20 4A/4V 70V
--70V 115W RCA1C13 PNP TO-220 40 -lA/2V -120V 40W
BOX18 PNP TO-3 20 -4A/-4V
RCA1C14 NPN TO-220 20 3A/4V 40V 50W
2N62D2 NPN TO-220 30 3A/4V 80V 40W ------
2N6107 PNP TO-220 30 -3A/-4V -80V 40W Complementary Driver Pairs/Predrivers
2N6488 NPN TO-220 20 5A/4V 85 75W
2N6491 PNP TO-220 20 -5A/-4V -B5V 75W 2N2102 NPN TO-39 25 0.1 A/5V 100V 5W
B0239-243 NPN TO-220 15 3A/4V 100V 70W 2N3440 NPN TO-39 40 20 mA/l0V 400V lOW
B024O-244 PNP TO-220 15 -3A/-4V -100V 70W 2N4036 PNP TO-39 50 0.15A/l0V 65V 7W
RCA1A05 PNP TO-39 50 -O.15A/-4V -75V 7W 2N5320 NPN TO-39 40 0.5A/4V 90V lOW
RCA1A06 NPN TO-39 50 0.15A/4V 75V 5W 2N5322 PNP TO-39 40 -0.5A/-4V -90V lOW
RCA1C05 NPN TO-220AB 20 3A/4V 50V 40W 2N5415 PNP TO-39 20 -50mA/-l0V -300V lOW
RCA1C06 PNP TO-220AB 20 --3A/-4V -50V 40W 80239-243 NPN TO-220 15 3A/4V 100V 70W
RCA1C07 NPN TO-220 20 4A/4V 65 75W 80240-244 PNP TO-220 15 -3A/-4V -100V 70W
RCA1C08 PNP TO-220 20 -4A/4V -65 75W RCA1AOl NPN TO-39 40 0.01 A/4V 70V 5W
RCA1Cl0 NPN TO-220 50 1.5A/4V 40 40W RCA1AOB PNP TO-39 30 -O.lA/-l0V -50V 7W
RCA1Cll PNP TO-220 50 -1.5A/-4V --40 40W RCA1A09 NPN TO-39 20 0.01 A/l0V 175V lOW
RCP700 NPN TO-202 50 0.5A/4V 100V lOW RCA1Al0 PNP TO-39 40 -0.01 A/-l0V -175V lOW
RCP701 PNP TO-202 50 -O.5A/4V -100V lOW RCA1A15 NPN TO-39 20 0.01A/l0V 100V lOW
RCS617 NPN TO-3 20 115W RCA1A16 PNP TO-39 40 -0.01 A/-l0V -100V lOW
5A/4V 85V
RCS618 PNP TO-3 RCAl E02 NPN TO-66 30 0.3A/2V 175V 35W
20 -5A/4V -85V 115W
TA8638 NPN TO-3 RCAl E03 PNP TO-66 30 -0.3A/-2V -175V 35W
15 8A/4V 140V 200W
RCP131 NPN TO-202 50 50mA/l0V 350V lOW
TA9116 PNP TO-3 15 -8A/4V -140V 200W
RCP700 NPN TO-202 50 0.5A/4V 100V lOW
Quasi Complementary Output Transistors RCP701 PNP TO-202 50 -O.5A/4V -100V lOW
2N3055 NPN TO-3 20 4A/4V 70V 115W
2N3055 NPN TO-3 20 5A/4V 80V 150W
Protection Circuit Types
IHometaxial) RCA1A1B NPN TO-39 4CJ 0.01 A/4V 10V 5W
2N3442 NPN TO-3 20 3A/2V 150V 150W RCA1A19 PNP TO-39 40 -0.01 A/-4V -10V 7W
2N3772 NPN TO-3 15 10A/4V 70V 250W
2N3773 NPN TO-3 15 8A/4V 160V 250W
2N5298 NPN TO-220 20 5A/4V 75V 75W
2N5496 NPN TO-220 20 3,5A/4V 70V 36W
Input Device Types
2N6103 NPN TO-3 20 5A/4V 75V 75W RCA1A02 PNP TO-39 30 -0.lA/-l0V -50 V 7W
2N6292 NPN TO-220 30 2.5A/4V BOV 40W RCAl A07 NPN TO-39 50 0.01A/l0V 40V 5W
2N6488 NPN TO-220 20 5A/4V 90V 75W RCA1Al1 NPN TO-39 40 0.01A/l0V 175V lOW
2N6510 NPN TO-3 10 4A/3V 300V 120W RCA1A17 NPN TO-39 40 0.01A/4V 90V 5W
BUX18 NPN TO-3 10 4A/3V 375V 120W
________________________________________________________________ 17
Power Hybrid Comparison Chart
Multi-Purpose High-PowerOperational Amp!ifiers
HC2000H* HC2500
+Vs
AI A2
820 C 8200
INVERTING
INPUT
®
*BASE
PLATE
02
A3 A6
210.n 56 n
*ELECTRICALLY ISOLATED FROM INTERNAL CIRCUITRY,

92CS-:?I077RI
Schematic diagram of type HC2000H operational amplifier. Schematic diagram of type HC2500 operational amplifier.
HC2000H* - Applications HC2500 - Applieations
Motor control, magnetic-deflection amplifiers, solenoid Low-diS!:ortion, high-power amplifiers for audio and other
driver, low-freq!lency oscillator amplifier, voltage regu- end uses where internal overload protection is not required.
lators, constantcurtent SQurce, inverting and non-inverting
unity-gain amplifier.
Ratings and Features for HC2000H* and HC250Q
Ratings: Features:
SUPPLY VOLTAGE: Bandwidth: 30 kHz at 60 W

Between leads 1 and 10 ••..••.•••..••.•••..• 75 V High power output: up to 100 W (rms)
OUTPUT CURRENT (peak) ................... 7A Single or split power supply:
OPERATING TEMPERATURE RANGE .•• -1$5 to +150oC 30 to 75 V single, ±15 to ±37.5 V split
COMPARISON CHART
OUTPUT
IMOIST. PROTECTION OPERATING FREQUENCY COMMUTATING
TYPE 200 mW
@
NETWORK MODE COMPENSATION DIODeS
LC FILTER
HCZQOOH* 0.6% YES CLASS B YES
ON OUTPUT
HC2500 0.06% NO CLASS AB CAPACITOR ON NO

SIGNAl. TERMINALs
Socket for both types: RCA part DG-293A, or

Electronic Essential$, 210 Elizabeth St., New York, N.Y.10Q12, Part No. MS5·1000
* HC2000H also available to MIL-spec as HC2000H/1, 2,3,4.

(see data bulletin file no. 789, or pg. 404 in the "High-Reliability Devices" DATABOOK SSD-230.)
18 ________________________________________________________------
RF Power Transistor Selection Charts
Collector- Min_ Outpu Data Min. Collector- Min.
Operating Supply
Package Supply Frequency Power (W) Sheat Output Power
Type Type Frequency
Type Voltage (V) (MHz) or Noise File Power Voltage Gain
(MHz) (W) (V)
Figure (dB) No_
2N2857 TO-72 6-15(V CE ) 450 NF = 4.5 61 For VHF and UHF Mobile·Radio Applications
2N2876 TO-60 28 50 10 32
2N3229 TO-60 50 50 15 50
2N3375 TO-SO 28 2N4427 175 1 12 10
400 3 386
2N3478 TO-72 6-15(V CE ) 200 NF = 4.5 2N5913 175 1.75 12.5 12.4
77
40280 175 1 13.5 9
2N3553 TO-39 28 175 2.5 386 40964 470 0.4 12 6
2N3600 TO-72 6-15(VCE) 200 NF = 4.5 83 40965 470 0.5 12 7
2N3632 TO-SO 28 175 13.5 386
2N3733 TO-SO 28 400 10 72 For Aircraft-Radio Applications
2N3839 TO-72 6-15(VCE) 450 NF = 3.9 229
2N3866 TO-39 28 400 1 80 40290 118·136 2 12.5 6
2N3866~ TO-39 28 800 1 - 40291 118·136 2 12.5 6
2N4012 TO-SO 28 1000 2.5 90 40292 118·136 6 12.5 4.8
(tripler)
2N4427 2N5102 118-136 15 24 4
TO-39 12 175 1 228
2N4440 TO-60 28 400 5 217 For Single-Sideband Applications
and For Military Communications
2N4932 TO-SO 13.5 88 12 249
2N4933 TO-60 24 88 20 249 40936 30 20 (PEP) 28 13
2N5070 TO·60 28 30 25 (PEP) 268 2N5070 30 25(PEP) 28 13
2N5071 TO·60 24 76 24 269 2N5071 76 24 24 9
2N5090 TO·60 28 400 1.2 270 2N3866 400 1 28 10
2N5102 TO·60 24 136 15 279
2N5109 TO·39 15 200 NF =3 281 For CB-Radio Applications
2N5179 TO·72 6(VCE) 200 NF = 4.5 288
2N5180 TO·72 10(VCE) 200 NF = 4.5 289
2N5913 TO-39 2N6670 27 4 12.5 10
12 470 2 423
2N6670 T()'202AB 12.5 27 4 1091 For CATV/MATV and Small-Signal
40280 TO-39 13.5 175 1 68 Low-Noise Applications
40290 TO-39 12.5 135 2 70
40291 TO-60 12.5 135 2 70 2N3478 200 4.5 6.15 11.5
40292 TO·SO 12.5 135 6 70 2N5179 200 4.5 6 15
40340 TO-60 13.5 50 25 74 2N5109 200 3 15 11
40608 200 3 15 11
40341 TO-60 24 50 30 74 40894 200 3 12 15
40606 Premium high·reliability version of 2N3632 600 40895 200 - 12 15
40608 TO-39 15 200 NF = 3 356 40896 200 - 12 15
40894 TO-72 12 200 rf amp. 548 2N3600 200 4.5 15 17
40895 TO·72 12 200 mixer 548 40897 200 - 12 18
40896 TO-72 12 200 Osc. 548 2N2857 450 4.5 6 12.5
40897 TO-72 12 10.7 if amp. 548 2N3839 450 3.9 6 12.5
40936 ITO-60 28 30 20 (PEP) 551
40964 ITO-39 12 470 0.4 581 For Microwave Applications
40965 ITO-39 12 470 0.5 581
41024 trO-39 28 1000 1 658 41024 1000 I 5
Minimum Output Power = 1 W
I28 I 5
Collector Efficiency = 35%
__________________________________________________________________ 19
Triac Product Matrix
RCA TO-205MA/TO-5 Mod. TO-205MA/TO-5 With TO-202AB

Triacs Modified Heat Radiator VERSATAB
IT(RMS) 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A
ITSM(60 Hz) 25A 25A 25A 25A 25A 25A 25A 25A 25A 25A
VOROM(V) 50 T2300F T2301F T2302F T2303F T2310F T2311F T2312F T2313F T2320F T2327F
100 T2300A T2301A T2302A 2N5754 T2310A T2311A T2312A T2313A T2320A T2327A
200 T2300B T2301B T2302B 2N5755 T231()B T,2311B T2312B T2313B T2320B T2327B
..
"E 300 T2320C T2327C
c
..
~
Ii)
400
500
T23000 T23100 T23020 2N5756 T23100 T2311D T23120 T23130 T23200 T23270
T2320E T2327E
600 2N5757 T2313M
IGT(mA) 1+, III' 3 4 10 25 3 4 10 25 3 5
1-,111+ 3 4 10 40 3 4 10 40 3 5
..'" VGT(V)
VOROM(V)
All Modes
100
2.2 2.2 2.2 2.2
T2306A
2.2 2.2 2.2 2.2
T2316A
2.2 2.2
~"5 200 T2306B T2316B

>o0 .-..i: 400 T23060 T23160
N
..
.. CIl IGT(mA)
VGT(V)
1+,111+
1+,111+
45
1.5
45
1.5
IT(RMS) 0.5A 0.5A
c VOROM(V) 200 T2304B T2305B
N 0
%.;::; 400 T23040 T23050
o~
C .. IGT(mA) 1+, III' 10 25
.... co
0 1-,111+ 10 40
VGT(V) All Modes 2.2 2.2
~()'213MAl
TO-66
RCA TO-202AB TO-213MA/ With Heat TO-220AB
Triacs VERSATAB TO-66 Radiator VERSAWATT
ISOWATT*
IT(RMS) 2.5A 2.5A 6A 15A 6A 6A 6A 8A 8A '8A
ITSM(60 Hz) 25A 25A 100A 100A l00A 60A 80A 100A 100A 100A
VOROM(V) 50 T2322F T2323F T2801F T2800F T2802F T2850F
100 T2322A T2323A T2801A T2800A T2802A T2850A
.
"E
~
c
200
300
T2322B
T2322C
T23238 T2700B T4700B
T2323C
T2710B T2500B T2801B
T2801C
T2800B
T2800C
T2802B
T2802C
T2850B
a 400
500
T23220
T2322E
T23230 T27000 T47000
T2323E
T27100 T25000 T28010
T2801E
T28000
T2800E
1'28020
T2802E
T28500
T2850E
600 T2800M T2802M
IGT(mA) 1+, III' 10 25 25 30 25 25 80 25 50 25
1',111+ 10 40 40 80 40 60 - 60 - 60
..'"
.I9.c
VGT(V)
VOROM(V)
All Modes
100
200
2.2 2.2 2.2 2.5 2.2 2.5 4.0" 2.5 2.5" 2.5
T2706B T4706B T2716B T2506B T2806B T2856B

o~
>.- 400 T27060 T47060 T27160 T25060 T2806D T28560
e~
.. IGT(mA) 1+,111+ 45 45 45 45 45 45
N VGT(V) 1+,111+ 1.5 1.5 1.5 1.5 1.5 1.5
*ISOWATT - Mounting tab electrically isolated from electrodes "1+, III" only
20 ______ ________________ __________________________________________

~
~
RCA TO-220AB Press-Fit

Stud
Triaes VERSAWATT (TO-203AA)
IT(RMS) 8A 12A 12A 12A 12A lOA 15A 10 15
ITSM(60Hz) l00A 120A 120A 120A l00A 100A 100A 100A 100A
VDROM(V) 50 T4101F T4100F T4111F T4110F
100
200 T2851B 2N6342A 2N6346A SC1498 TlC236B 2N5567 2N5571 2N5569 2N5573
"E
<II 300 T2851C
0
..
-g
c 400
500
T2851D 2N6343A 2N6347A SC149D TIC236D
T2851E SC149E
2N5568
T4101E
2N5572
T4100E
2N5570
T4111E
2N5574
T4110E
600 2N6344A 2N6348A SC149M T4101M T4100M T4111M T4110M
IGT(mA) 1+,111- 80 50 50 50 50 25 50 25 50
1-,111+ - - 75 50· 50· 40 80 40 80
VGT(V) All Modes 3 2 2.5 2,5 2.5 2.5 2.5 2.5 2.5
VDROM(V) 200 T4107B T4106B T4117B T4116B
:!L
.I9.c
-
400 T4107D T4106D T4117D T4116D
0u ..
>.- 600 T4107M T4106M
N
..
o 0==
... IGT(mA)
VGT(V)
1+,111+
All Modes
45
1.5
45
1.5
45
1.5
45
1.5
IT(RMS) 6A lOA 15A 6A lOA 15A
c VDROM(V) 200 T4105B T4104B T4103B T4115B T4114B T4113B
NO
:1:';::: 400 T4105D T4104D T4103D T4115D T4114D T4113D
Q~
0" IGT(mA) 1+,111- 50 50 50 50 50 50
""a.
0 1-,111+ 80 80 80 80 80 80
VGT(V) All Modes 2,5 2.5 2.5 2.5 2.5 2.5
.1- only
Press-Fit
With flex_ leads, With flex. leads,
RCA Isolated eneap. on iso- Isolated on eneap., isolated TO-220AB
Triaes Stud lated-stud TO-3 flange on TO-3 flange VERSAWATT
IT(RMS) lOA 15A lOA 15A lOA 15A lOA 15A 15A 15A
ITSM(60 Hz) 100A 100A 100A 100A 100A 100A 100A 100A 150A 150A
VDROM(V) 50 T4121F T4120F T4131F T4130F T4141F T4140F T4151F T4150F
100
..
"E 200 T4121B T4120B T4131B T4130B T4141B T4140B T4151B T4150B MAC15-4 MACI5A-4
......
-g
c 400 T4121D T4120D T4131D T4130D T4141D T4140D T4151D T4150D MACI5-6 MAC15A-6
0 500 T4121E T4120E T4131E T4130E T4141E T4140E T4151E T4150E
600 T4121M T4120M T4131M T413'oM T4141M T4140M T4151M T4150M MACI5-8 MACI5A-8
IGT(mA) 1+,111- 25 50 25 50 25 50 25 50 50 50
1-,111+ 40 80 40 80 40 80 40 80 - 75
VGT(V) All Modes 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2 2.5
:!L VDROM(V) 200 T4127B T4126B
.I9.c 400 T4127D T4126D
o,f:!
>.- 600 T4127M T4126M
E!~
.. IGT(mA) 1+,111+ 45 45
N VGT(V) All Modes 1.5 1.5
____________________________________________________________________ 21
RCA TO-220AB
Triacs VERSAWATT Press-Fit Stud Isolated Stud
ITIRMS) 15A 16A 16A 16A 30A 40A 30A 40A 30A 40A
ITSMI60Hz) 150A l00A 150A 150A 300A 300A 300A 300A 300A 300A
VOROMIV) 50 T6000F T6001F T6401F T6402F T6411F T6412F T6421F T6420F
100
..
1!
'tl
c:
200
300
SC151B TlC246B T6000B
T6000C
T6001B
T6001C
T6401B 2N5441 T6411B 2N5444 T6421B T6420B
400 SC1510 TIC2460 T60000 T60010 T64010 2N5442 T64110 2N5445 T6421 0 T64200
£i 500 SC151E T6000E T6001E T6401E T6402E T6411E T6412E T6421E T6420E
600 SC151M T6000M T6001M T6401M 2N5443 T6411M 2N5446 T6421.M T6420M
IGTlmAI 1+, III" 50 50 50 80 50 50 50 50 50 50
1-,111 50· 50· 80 - 80 80 80 80 80 80
VGTIV) All Modes 2.5 2.5 2.5 3 2.5 2.5 2.5 2.5 2.5 2.5
VOROMIV) 200 T6006B T6407B T6406B T6417B T6416B T6427B T6426B
300 T6006C
'"
'"
:I.e: 400 T60060 T64070 T64060 T64170 T64160 T64270 T64260
- u
>0 .-... 500 T6006E
o~U)3: 600 T6006M T6407M T6406M T6417M T6416M T6426M
'"
N IGTlmA) 1+,111+ 45 45 45 45 45 45 45
VGTIV) All Modes 1.5 1.5 1.5 1.5 1.5 1.5 1.5
IT(RMS) 25A 40A 25A 25A 40A
VOROMIV) 200 T6405B T6404B T6415B 2N5806 T64148
c: 400 T64050 T64040 T64150 2N5807 T64140
N 0
J:';::; '500 2N5808
of! 600 2N5809
cva.
'"
0 IGTlmA) 1+, III" 80 80 80 80 80
1-,111+ 120 120 120 150· 120
VGTIV) All Modes 3 3 3 2.5" 3
. , - mode only "4 V for 111+ mode -so mA for 1- mode
Press-Fit
With flex, leads, With flex, leads,
RCA encap, on iso- Isolated on encap_, isolated Overmold
Triacs lated-stud TO-3 flange on TO-3 flange Stud
IT(RMS) 30A 40A 30A 40A 30A 40A 60A 80A
ITSMI60Hz) 300A 300A 300A 300A 300A 300A 600A 850A
VOROMIV) 50 T6431 F T6441F T6440F T6451F T6450F T8411F T8410F
100
'tl 200 T6431B T6430B T6441B T6440B T6451B T6450B T8411B T8410B
:;; 300
'tl
0
.
c:
400 T64310 T6430D T64410 T64400 T64510 T64500 T84110 T84100
500 T6431E T6441E T6440E T6451E T6450E T8411E T8410E
600 T6431M T6430M T6441M T6440M T6451M T6450M T8411M T8410M
IGTlmA) 1+,111- 50 50 50 50 50 50 75 75
1-,111+ 80 80 80 80 80 80 150 150
VGTIV) All Modes 2,5 2.5 2.5 2.5 2,5 2.5 2,8 2,5
22 ________________________--__-------------------------------------------
SCR Product Matrix
RCA TO-202AB TO-220AB TO-213MA/
SCR's TO-S VERSATAB VERSAWATT TO-66
IT(RMS) 2A 4A 4A 4A 4A 4A 4A 4A 4A 4A 5A
ITSM (60 Hz) 60A 20A 15A 30A 20A 20A 20A 35A 35A 35A 60A
VOROM 15 Cl06Q Cl07Q Cl0BQ S106Q S107Q S10BQ S2060Q S2061Q S2062Q
VRROM(V) 25
30 Cl06Y Cl07Y Cl0BY S106Y S107Y S10BY S2060Y 52061Y 52062Y
50 Cl06F Cl07F Cl0BF 5106F 5107F 510BF 52060F 52061F 52062F
100 Cl06A Cl07A Cl0BA 5106A 5107A 510BA 52060A 52061A 52062A
150
200 2N352B Cl06B Cl07B Cl0BB 5106B 5107B 5108B 52060B 52061B 52062B 2N322B
250
300 52060C 52061C 52062C
400 2N3529 Cl060 Cl070 Cl0BO 51060 51070 510BO 520600 520610 520620 2N3525
500 Cl06E Cl07E Cl0BE 5106E 5107E 510BE 52060E 52061E 52062E
600 2N4102 Cl06M Cl07M Cl0BM 5106M 5107M 510BM 52060M 52061M 52062M 2N4101
IGT(mA) 15 0.2 0.5 0.2 0.2 0.5 2 0.2 0.5 2 15
VGT(V) 2 O.B O.B O.B O.B O.B O.B O.B O.B O.B 2
TO-213MA/
RCA TO-66 With TO-220AB
SCR's TO-213MA/TO-66 Heat Rad_ VERSAWATT
FTO' FTO' FTO' FTO' FTO' FTO' FTO' FTO' FTO' FTO'
IT(RM5) 5A 5A 5A 5A 5A 5A 5A 5A 5A 5A 5A
ITSM(60 Hz) BOA BOA BOA 75A(lPM) BOA BOA BOA BOA BOA BOA BOA
VrlROM 100 53704A 53714A
VRROM(V) 200 53700B 53704B 52710B 53714B 55BOOB 55BOIB 55B02B
250
300 55800C S5BOIC S5B02C
400 S37000 S37040 S27100 S37140
S5BOOO S5BOID S5B020
500 53706E S5BOOE S5BOIE S5B02E
600 S3705M S3700M S3704M S3701M S2710M S3714M S5BOOM 55BOIM 55B02M
700 537045 537025 537145
750 53703SF
IGT(mA) 30 40 40 35 45 40 15 40 50 50 50
VGT(V) 4 3.5 3.5 4 4 4 2 3.5 2.5 2.5 2.5
Low-Pro- TO-205MA/
file Mod. TO-205MA/ TO-6 with
RCA TO-205MA/ TO-5with Heat TO-220AB TO-204MA/ Press-Fit
SCR's TO-5 Heat Rad. Spreader VERSAWATT TO-3 TO-203AA
IR(RM5) 7A 3.3A 7A BA lOA 12 16 12.5 20A 35A

IT5M(60 Hz) 100A 100A l00A 100A 100A 125 160 200A 200A 350A
VOROM 50 5122F 52BOOF 2N6394 2N6400
VRROM(V) 100 5122A 52BOOA 2N6395 2N6401 2N366B 56200A 2N3B70
150
200 S2600B 52610B 526208 5122B S2BOOB 2N6396 2N6402 2N3669 56200B 2N3B71
250
300 S122C 52800C 56000C 56100C
400 526000 526100 526200 51220 52BOOO 2N6397 2N6403 2N3670 562000 2N3872
500 5122E 52800E 56000E 56100E
600 52600M 5261 OM 52620M S122M 52800M 2N6398 2N6406 2N4103 56200M 2N3873
700 51225 528005 560005 561005
IGT(mA) 15 15 15 25 15 30 30 40 15 40
VGT(V) 1.5 1.5 1.5 1.5 1.5 1.5 1.5 2 2 2
• FTO - Fast Turn-Off. .Check availability in Europe, the Middla East, and Africa•
______________________________________________________ ~ __________ 23
seR Product Matrix
Pr.... Fit
With flex. lead., With fIex.lead.,
RCA Isolated eneap. on ilG- Isolated on encap., isolated
SCR', Stud Stud lated stud TO·3flange on T0-3 flange
IT(RM5) 20A 35A 20A 35A 20A 35A 20A .35A 20A 35A
ITSM(60Hz) 200A 350A 200A 350A 200A 350A 200A 350A 200A 350A
VOROM 100 56210A 2N3896 56220A 56420A 56230A 56430A 56240A 56440A 56250A 56450A
VRROM(V) 200 562108 2N3B97 562208 564208 562308 564308 562408 564408 562508 564508
400 562100 2N389B 562200 564200 562300 564300 562400 564400 562500 564500
600 5621 OM 2N3B99 56220M 56420M 56230M 56430M 56240M 56440M 56250M 56450M
IGT(mA) 15 40 15 40 15 40 15 40 15 40
VC.\T(V) 2 2 2 2 2 2 2 2 2 2
Overmold
RCA Overmold Isolated
SCR's TO·208MA/TO-48 Stud Stud
Pulse
Modulator FTO· FTO· FTO·
IT(RM5) 16A 25A 35A 35A 35A 40A- 75A 75A
IT5M(60 Hz) 125A 150A 150A 180A 180A 400A 750A 750A
VOROM 15
VRROM(V) 25 2N1842A 2N681
30
50 2N1843A 2N682 2N3654
100 2N1844A 2N683 2N3650 2N3655 58612A 58613A 58622A 58623A
.·150 2N1845A 2N684
200 2N1846A 2N685 2N3651 2N3656 573108 S86128 586138 586228 586238
250 2N1847A 2N686
300 2N1848A 2N687 2N3652 2N3657 57310C
400 2N1849A 2N688 2N3653 2N3658 573100 586120 586130 586220 586230
500 2!II 1850A 2N689 57310E
600 2N690 56493M 5741 OM 57412M 5731 OM 58612M S8613M 58622M S8623M
IGT(mA) 45 25 80 180 180 80 200 200 200 200
VGT(V) 3.5 3 2 3 2 3 3 3 3 3
·FTO - Fast Turn·Off -A5CR (Asymmetrical 5i1icon Controlled Rectifiers)
ITR Product Matrix

Overmold For Horizontal·Deflection Circuits
RCA Overmold Isolated
SCR's Stud Stud RCA T0-220AB
IT(RM5) 100A 100A ITR'.- VERSAWATT
IT5M(60Hz) 1000A 1000A Commuteting Commuteting
VOROM 15 Trece (Retrace) Trace (Retrace)
VRROM(V) 25 IT(RM51 8A 8A 8A 8A
30 ITSM(60 Hz) 90A 90A 90A 90A
50 VOROM(VI 300
100 58610A 58611A 58620A 58621A 400
150 450 539020F
200 586108 586118 586208 586218 500
250 550
300 600 53901M
400. 586100 586110 586200 586210 650 53900MF 53901MF 53903MF
500 700 53900s 539015
600 S8610M 58611M 58620M S8621M 750 53900sF
IGT(mAI 200 200 200 200 IGT(mAI 30 45
VGT(V) 3 3 3 3 VGT(VI 4 4
"Integrated Thyristor/Rectifiers
24 ________________----------------------------------__________________
GTO, Diac, and Rectifier Product Matrices
GTO Product Matrix Diac Product Matrix
For Triggering Devices
RCA TO-220AB
GTO's* VERSAWATT
RCA
IT(OCI 15A 15A Diacs DO-204AC/DO-15
ITSM(60Hzl 85A 85A 03202Y 03202U
VORXM(VI 100 G4000A G4001A Ipk 2A 2A
200 G4000B G4001B 29 min. 35 max. V 25 min. 40 max. V
±V(BOI
400 G40000 G4001D I+V(BOII-I- V(BOII ±3 max. V ±3max. V
tgq 251's 251's I<l.V±1 9 min. V 9 min. V
GTO - Gate-Turn-Off SCR
Rectifier Product Matrix

Standard Types
RCA DO-203AA! DO-203AB/

Rectifiers 00-4 00-5
10 6A 12A 20A 40A
IFSM 160A 240A 350A 800A
VRRM(VI 50 lN1341B lN1199A lN248C lN1183A
100 lN1342B lN1200A lN249C lN1184A
200 lN1344B lN1202A lN250C lN1186A
300 lN1345B lN1203A lNl195A lNl1B7A
400 lN1346B lN1204A lN1196A lNllBBA
500 lN1347B lN1205A lNl197A lN1189A
600 lN134BB lN1206A lN1198A lNl190A
Fast-Recovery Types
RCA DO-203AA! DO-203AB!

Rectifier 00-4 00-5
10 6A 6A· 12A 12A· 20A 20A· 30A 40A
IFSM 75A 125A 150A 250A 225A 300A 300A 700A
VRRM(VI 50 lNJB79 02406F lN3BB9 02412F lNJB99 02520F lN3909 02540F
100 lN3880 02406A lNJB90 02412A lNJ900 02520A lN3910 02540A
200 lNJBBl 02406B lN3B91 02412B lN3901 02520B lN3911 02540B
300 lN3BB2 02406C lN3B92 02412C lN3902 02520C lN3912
400 lN3BB3 024060 lNJB93 024120 lN3903 025200 lN3913 025400
500
600 02406M 02412M 02520M 02540M
Reverse
Recovery
Time trr Typ. - 200 ns - 200 ns - 200 ns - 200 ns
Max. 200 ns 350 ns 200 ns 350 ns 200 ns 350 ns 200ns 350 ns
.Check availability in Europe, the Middle East, and Africa.
__________________________________________________________________ 25
Power Devices Cross-Reference Guide
(Industry Type to Equivalent RCA Type)
This guide provides a quick reference to more than 2300 industry power devices (power transistors,
silicon controlled rectifiers, and triaes) and their nearest RCA replacements. The nearest RCA device is
determined on the basis of electrical similarity as well as package similarity.
POWER TRANSISTORS
Industry RCA Industry RCA Industry RCA
Type Package Type Package Type Package Type Package Type Package Type Package
2N656 TO·5 2N2102 TO·39 2N3022 TO·3 2N4902 TO·3 2N3464 TO·39 2N3053 TO·39
2N1132A TO·5 2N4037 TO·39 2N3024 TO·3 2N4904 TO·3
2N1507 TO·5 2N1711 TO·39 2N3026 TO·3 2N4905 2N3599 TO·63 2N3265 TO·63
TO·3
:2N3036 TO·5 2N5320 TO·39 2N3665 TO·39 2N1893 TO·39
2N1565 TO·5 40360 TO·39
2N3076 TO·36 2N6249 TO·3 2N3672 TO·5 2N699 TO·39
2N1565A TO·5 40360 TO·39
2N3079 TO·36 2N6511 TO·3 2N3712 TO·39 2N3440 TO·39
2N1573 TO·5 40409 TO·39HR
2N1574 40409 2N3080 TO·36 2N6670 TO·3 8F257 TO·39
TO·5 TO·39HR
2N1613S TO·5 2N1613 TO·39 2N3108 TO·39 2N2102 TO·39 2N3713 TO·3 2N3715 TO·3
2N1711S TO·5 2N1711 TO·39 2N3109 TO·39 2N1711 TO·39 2N3715 TO·3
2N3110 TO·39 2N3053 TO·39 2N3714 TO·3 2N3716 TO·3
2N1714 TO·5 2N1480 TO·39
2N3114 2N3716 TO·3
2N1889 TO·5 2N699 TO·39 TO·39 BF257 TO·39
2N1893S TO·5 2N1893 TO·39 2N3122 TO·5 2N5321 TO·39 2N3719 TO·39 2N5323 TO·39
2N1974 TO·5 40360 TO·39 2N3133 TO·39 40634 TO·39 2N3720 TO·39 2N5322 TO·39
2N1975 TO·5 40360 TO·39 2N3134 TO·39 2N4037 TO·39 2N3738 TO·66 2N3584 TO·66
2N1990 TO·5 BF257 TO·39 2N3183 TO·3 2N6246 TO·3 BF259 TO·39
2N1990S TO·5 BF257 TO·39 2N3184 TO·3 2N6246 TO·3 2N3743 TO·39 2N5416 TO·39
2N2034 TO·5 2N5784 TO·39 2N3185 TO·3 2N6247 TO·3 BFT19B TO·39
2N2195 TO·39 2N697 TO·39 2N3202 TO-5 2N5783 TO·39 2N3778 TO·5 2N5783 TO·39
2N2195A TO·39 2N697 TO·39 2N3203 TO·5 2N5781 TO·39 2N3779 TO·5 2N5781 TO·39
2N3208 TO·5 2N5783 TO·39 2N3782 TO·5 2N5783 TO·39
2N2217 TO·39 2N697 TO·39.
2N2243A TO·39 2N1893 TO·39 2N3226 TO·3 2N6253 TO·3 2N3790 TO·3 2N3792 TO·3
2N2270S TO·39 2N2270 TO·39 2N3233 TO·3 2N3442 TO·3
2N3795 TO·5 2N5415 TO·39
2N2297 TO·39 2N1613 TO·39 2N3234 TO·3 2N3055 TO·3 2N3863 . TO·3 2N3055 TO·3
2N2410 TO·39 2N3053 TO·39 2N3237 TO·3 2N5302 TO·3 BUX18C TO·3
2N2538 TO·39 2N1711 TO·39 2N3239 TO·3 2N5882 TO·3 2N2270 TO·39
2N2846 TO·39 2N697 TO·39 2N3245 TO·39 2N5323 TO·39 2N4004 Radial 2N3263 Radial
2N2848 TO·39 2N697 TO·39 2N3292 TO·S 2N697 TO·39 2N4030 TO·39 2N4036 TO·39
2N2863 TO·39 2N5321 TO·39 2N3300 TO·5 2N1711 TO·39 2N4054 TO·202 RCP113C TO·202
2N2864 TO·39 2N3053 TO·39 2N3418 TO·39 2N5320 TO·39 2N4055 TO·202 RCP113B TO·202
2N2868 TO·39 2N3053 TO·39 2N3444 TO·39 2N5321 TO·39 2N4056 TO·202 RCP113B TO·202
2N2951 TO·39 41502 TO·39 2N3445 TO·3 2N6471 TO·3 2N4057 TO·202 RCP113B TO·202
2N3020 TO·39 2N1893 TO·39 2N3448 Tq·3 2N6472 TO·3
26
POWER TRANSISTORS (CONT'D)
2N4111 TO-3 2N4914 TO-3 2N5192 Case 77B0241B TO-220 2N5687 TO-39 40412 TO-39
2N4113 TO-3 2N4915 TO-3 2N5193 Case 77B0242 TO-220 2N&732 TO-3 2N5671 TO-3
2N4130 TO-3 2N3055 TO-3 2N5194 Case 77B0242A TO-220 2N5733 TO-63 2N3265 TO-63
2N4210 TO-63 2N3266 TO-63 2N5195 Case 77B0242B TO-220 2N5734 TO-3 2N5671 TO-3
2N4211 TO-63 2N3265 TO-63 2N5241 TO-3 2N6513 TO-3 2N5737 TO-3 2N6246 TO-3
2N4231 TO-66 2N6374 TO-66 BUX18C TO-3 2N5738 TO-3 2N6248 TO-3
2N4234 TO-39 2N5783 TO-39 2N5280 Flange 2N4036 TO-39FL 2N6262 TO-3
2N4236 TO-39 2N5781 TO-39 2N5282 TO-5 2N5416 TO-39 2N6262 TO-3
2N4238 TO-39 2N5785 TO-39 2N5296 TO-220 2N5298 TO-220 2N6262 TO-3
2N4387 TO-66 2N5956 TO-66 2N5305 TO-3 BOY29 TO-3 2N5864 TO-39 40634 TO-39
2N4388 TO-66 2N5955 2N5331 TO-63 2N3265 TO-63 2N5865 TO-39 40634 TO-39
TO-66
2N5466 TO-3 2N6671 TO-3 2N5932 TO-3 2N5671 TO-3
2N4898 TO-66 2N5956 TO-66
2N5467 TO-3 2N6671 TO-3 2N5933 TO-3 2N5672 TO-3
2N4899 TO-66 2N5955 TO-66
2N5539 TO-63 2N3265 TO-63 TO-3 Mod.
2N4900 TO-66 2N5954 TO-66 2N5935 2N6032
2N5560 TO-63 2N3265 TO-63 TO-3
2N4907 TO-3 2N6246 TO-3
2N4908 TO-3 2N6246 TO-3 TO-66 2N5936 TO-3 2N6033 Mod.
2N5598 TO-66 2N5202
2N4909 TO-3 2N6247 TO-3 TO-66 TO-3
2N5600 TO-66 2N6500
2N4910 TO-66 2N6260 TO-66 TO-66 2N5966 TO-63 2N3265 TO-63
2N5602 TO-66 2N3879
2N6374 TO-66 2N5968 TO-63 2N3265 TO-63
2N5604 TO-66 2N6500 TO-66
2N4911 TO-66 2N3054 TO-66 2N5970 TO-3 2N6472 TO-3
2N5606 TO-66 2N3879 TO-66
2N6373 TO-66 2N5971 TO-3 2N6472 TO-3
2N5608 TO-66 2N3879 TO-66
2N4912 TO-66 2N6261 TO-66 2N5972 TO-3 2N6472 TO-3
2N5610 TO-66 2N6500 TO-66
2N6372 TO-66 2N5974 Case 90 2N6489 TO-220
2N5612 TO-66 2N6500 TO-66
2N5975 Case 90 2N6490 TO-220
2N4918 Case 77 B0240 TO-220 2N5614 TO-3 2N5039 TO-3
2N5976 Case 90 2N6491 TO-220
2N4919 Case 77 B0240A TO-220 2N5616 TO-3 2N5038 TO-3
2N5977 Case 90 2N6486 TO-220
2N4920 Case 77 B0240B TO-220 2N5618 TO-3 2N5038 TO-3
2N5978 Case 90 2N6487 TO-220
2N5620 TO-3 2N6496 TO-3
2N4921 Case 77 B0239 TO-220 2N5979 Case 90 2N6488 TO-220
2N5622 TO-3 2N5039 TO-3
2N4922 Case 77 80239A TO-220 2N5980 Case 90 2N6489 TO-220
2N5624 TO-3 2N5038 TO-3
2N4923 Case 77 B0239B TO-220 2N5981 Case 90 2N6490 TO-220
2N4926 TO-39 2N3440 TO-39 2N5626 TO-3 2N5038 TO-3 2N5982 Case 90 2N6491 TO-220
BF258 TO-39 2N5628 TO-3 2N6496 TO-3 2N5983 Case 90 2N6486 TO-220
2N4927 TO-39 2N3440 TO-39 2N5629 TO-3 2N4348 TO-3 2N5984 Case 90 2N6487 TO-220
BF258 TO-39 RCA8638E TO-3 2N5985 Case 90 2N6488 TO-220
2N4928 TO-39 BFT28 TO-39 2N5630 TO-3 2N4348 TO-3 2N5986 Case 90 2N6489 TO-220
2N4929 TO-39 BFT28A TO-39 RCA86380 TO-3 2N5987 Case 90 2N6490 TO-220
2N4930 TO-39 2N5415 TO-39 2N5631 TO-3 RCA3773 TO-3 2N5988 Case 90 2N6491 TO-220
BFT28B TO-39 2N5632 TO-3 RCA8638E TO-3 2N5989 Case 90 2N6486 TO-220
2N4931 TO-39 2N5416 TO-39 2N5633 TO-3 RCA86380 TO-3 2N5990 Case 90 2N6487 TO-220
BFT28C TO-39 2N5634 TO-3 MJ15003 TO-3 2N5991 Case 90 2N6488 TO-220
2N5050 TO-66 2N3584 TO-66 BOY37 TO-3 2N6029 TO-3 RCA9116E TO-3
2N5051 TO-66 2N3584 TO-66 2N5655 Case 77 2N6175 TO-5P 2N6030 TO-3 RCA91160 TO-3
2N5052 TO-66 2N3584 TO-66 2N5656 Case 77 2N6176 TO-5P 2N6031 TO-3 2N6609 TO-3
2N5058 TO-39 2N3439 TO-39 2N5657 Case 77 2N6177 TO-5P 2N6034 Case 77 2N6666 TO-220
BF259 TO-39 2N5660 TO-66 2N6077 TO-66 2N6034 Case 77 2N6666 TO-220
2N5059 TO-39 2N3440 TO-39 2N5661 TO-66 2N6079 TO-66 BOX34 TO-220
BF258 TO-39 2N5664 TO-66 2N6077 TO-66 2N6035 Case 77 RCA125 TO-220
2N5091 TO-5 2N5416 TO-39 2N5665 TO-66 2N6079 TO-66 BOX34A TO-220
2N5092 TO-5 2N5672 TO-63 2N3265 TO-63 2N6036 Case 77 RCA126 TO-220
2N3439 TO-39
2N5678 TO-63 2N3265 TO-63 BOX34B TO-220
2N5110 TO-5 2N5783 TO-39
2N5157 TO-3 2N5840 TO-3 2N5685 TO-3 2N5578 Mod. 2N6037 Case 77 2N6386 TO-220
2N5190 Case 77 B0241 TO-220 TO-3 BOX33 TO-220
2N5191 Case 77 B0241A TO-220 2N5686 TO-3 2N5578 Mod. 2N6038 Case 77 RCA120 TO-220
TO-3 BOX33A TO-220
27
Type Package Type Package Type Package TYPe Package Type Package Type Package
2N6039 Case 77 RCA121 TO-220 2N6300 TO-66 2N6534 TO-66 2SB531 TO-3 2N6247 TO-3
BOX33B to-220 2N6301 TO-66 2N6534 TO-66 2SB558 TO-3 2N6248 TO-3
2N6040 Case RCA125 TO-220 2N6302 TO-3 RCA3773 TO-3 2SB595 TO-220 2N6475 TO-220
199 BOX34A TO-220 2N6312 TO-66 2N6308 TO-3 2SB596 TO-220 2N6107 TO-220
2N6041 Case RCA126 TO-220 2N5956 TO-66 2SC481 TO-39 2N699 TO-39
199 BOX34B TO-220 2N6313 TO-66 2N5955 TO-66 2SC482 TO-39 2N1613 TO-39
2N6042 Case RCA126 TO-220 2N6314 TO-66 2N5954 TO-66 2SC485 TO-39 2N1893 TO-39
199 BOX34C TO-220 2N6338 TO-3 2N5672 TO-3 2SC504 TO-39 2N1711 TO-39
2N6043 Case RCA120 TO-220 2N6339 TO-3 2N!l672 TO-3 2SC512 TO-39 2N699 TO-39
199 BOX33A TO-220 2N6359 TO-3 2N4348 TO-3 2SC558 TO-3 BUX17A TO-3
2N6044 Case RCA121 TO-220 2N6360 TO-3 2N4348 TO-3 2SC560 TO-39 2N2405 TO-39
199 BOX33B TO-220 2N6406 Case 77 RCP700B TO-202 2SC779 TO-66 2N3584 TO-66
2N6045 Case 2N6531 TO-220 2N6407 Case 77 RCP700C TO-202 2SC782 TO-66 2N3585 TO-66
199 BOX33C TO-220 2N6408 Case 77 RCP701 B TO-202 2SC782A TO-66 2N3585 TO-66
2N6046 TO-63 2N3266 TO-63 2N6409 Case 77 RCP701 C TO-202 2SC783 TO;66 2N3583 TO-66
2N6047 TO-63 2N3265 TO-63 2N6412 Case 77RCP701 A TO-202 2SC789 TO-220 2N6292 TO-220
2N6248 TO-63 2N3265 TO-63 2N6413 Case 77RCP701 B TO-202 2SC790 TO-220 2N6290 TO-220
2N6049 TO-66 2N5955 TO-66 2N6414 Case 77RCP700A TO-202 2SC792 TO-3 BUX16B TO-3
2N6050 TO-3 2N6649 TO-3 2N6415 Case 77RCP700B TO-202 2SC1173 TO-220 2N6288 TO-220
2N6051 TO-3 2N6650 TO-3 2N6415 Case 77RCP701C TO-202 2SC1195 TO-3 BUX16 TO-3
2N6053 TO-3 2N6649 TO-3 2N6417 Case 77RCP7010 TO-202 2SC1448A TO-220 TA8863 TO-220
2N6054 TO-3 2N6650 TO-3 2N6418 Case 77RCP700C TO-202 2SC1576 TO-3 BUX16 TO-3
2N6057 TO-3 2N6384 TO-3 2N6419 Case 77RCP7000 TO-202 2S0102 TO-66 2N6261 TO-66
2N6058 TO-3 2N6385 TO-3 2N6420 TO-66 2N6211 TO-66 2S0129 TO-66 2N6372 TO-66
2N6063 TO-63 2N3265 TO-63 2N6422 TO-66 2N6212 TO-66 2S0234 TO-220 RCA3054 TO-220
2N6121 TO-220 2N6290 TO-220 2N6423 TO-66 2N6212 TO-66 2S0235 TO-220 RCA3054 TO-220
2N6123 TO-220 RCA31 B TO-220 2N6425 TO-66 2N6212 TO-66 2S0371 TO-3 2N6254 TO-3
B0241B TO-220 2N6436 TO-3 2N5671 TO-3 2S0404C TO-220 2N6288 TO-220
2N6126 TO-220 RCA32B TO-220 2N6461 TO-39 2N3439 TO-39 2S0427 TO-3 2N4347 TO-3
B0242B TO-220 2N6542 TO-3 2N6670 TO-3 2S0428 TO-3 2N4348 TO-3
2N6132 TO-220 2N6109 TO-220 2N6551 T0-202 RCP701 B TO-202 2S0552 TO-3 BUX17A TO-3
2N6133 TO-220 2N6107 TO-220 2N6552 TO-202 RCP701 C TO-202 73T2 TO-39F L 40392 TO-39FL
2N6134 TO-220 RCA32B TO-220 2N6553 TO-202 RCP7010 TO-202 74T2 TO-39FL40628 TO-39FL
B0242B TO-220 2N6554 TO-202 RCP700B TO-202 100T2 TO-3 2N4347 TO-3
TO-3 2N6248 TO-3 2N6555 TO-202 RCP700C TO-202 104T2 TO-3 2N6253 TO-3
2N6226
TO-3 2N6248 TO-3 2N6556 TO-202 RCP7000 TO-202 108T2 TO-3 2N5039 TO-3
2N6229
2N6230 TO-3 RCA91160 TO-3 2N6557 TO-202 RCPll1B TO-202 109T2 TO-3 2N6354 TO-3
2N6231 TO-3 MJ15004 TO-3 RCPl13B TO-202 182T2A TO-3 BUX16 TO-3
2N6233 TO-66 2N3583 TO-66 2N6558 TO-202 RCP111C TO-202 182T2B TO-3 BUX16 TO-3
2N6077 TO-66 RCP113C TO-202 182T2C TO-3 BUX16 TO-3
2N6234 TO-66 2N3584 TO-66 2N6559 TO-202 RCPlll0 TO-202 184T2A TO-3 BUX16 TO-3
2N6077 TO-66 RCPl130 TO-202 183T2B TO-3 BUX16 TO-3
2N6235 TO-66 2N3585 TO-66 2N6569 TO-3 2N3055 TO-3 183T2C TO-3 BUX16 TO-3
2N6079 TO-66 2SA489 TO-220 2N6107 TO-220 183T2A TO-3 BUX16 TO-3
2N6248 TO-63 2N3265 TO-63 2SA490 TO-220 2N6109 TO-220 184T2B TO-3 BUX16 TO-3
2N6270 TO-3 2N5671 TO-3 2SA503 TO-39 2N4314 TO-39 184T2C TO-3 BUX16 TO-3
2N6271 TO-3 2N5672 TO-3 2SA504 TO-39 2N4037 TO-39 185T2A TO-3 BUX16A TO-3
2N6272 TO-63 2N3265 TO-63 2SA512 TO-39 2N4314 TO-39 185T2B TO-3 BUX16A TO-3
2N6273 TO-63 2N3265 TO-63 2SA560 TO-39 2N4314 TO'39 185T2C TO-3 BUX16A TO-3
2N6294 TO-66 2N6534 TO-66 2SA597 TO-39 2N4037 TO-39 40250 TO-66 2N3054 TO-66
2N6295 TO-66 2N6534 TO-66 2SA814 TO-220 2N6476 TO-220 40251 TO-3 2N3055 TO-3
2N6296 TO-66 RCA8350A TO-3 2SA815 TO-220 2N6475 TO-220 40636 TO-3 2N3055 TO-3
2N6297 TO-66 RCA8350B TO-3 2SB502A TO-66 2N5954 TO-66 BCl19 TO-39 2N697 TO-39
2N6298 TO-66 RCA8350A TO-3 2SB503A TO-66 2N5955 TO-66 BC120 TO-39 2N697 TO-39 '
2N6299 TO-66 RCA8350B TO-3 2SB53O TO-3 2N6248 TO-3 BC139 TO-39 40406 TO-39
28
BC140 TO-39 2N5321 TO-39 B0205 Case 90 2N6486 TO-220 B0316 TO-3 2N6247 TO-3
BC141 TO-39 2N5320 TO-39 B0206 Case 90 2N6489 TO-220 B0317 TO-3 2N6472 TO-3
BC142 TO-39 40360 TO-39 B0207 Case 90 2N6487 TO-220 B0318 TO-3 2N6248 TO-3
BC143 TO-39 40595 TO-39 B0208 Case 90 2N6490 TO-220 B0375 TO-126 B0239 TO-220
BC144 TO-39 40594 TO-39 B0213-45 TO-3P 2N64B6 TO-220 B0376 TO-126 B0240 TO-220
BC160 TO-39 2N5323 TO-39 80213-60 TO-3P 2N6487 TO-220 B0377 TO-126 B0239A TO-220
BC161 TO-39 2N5322 TO-39 80213-80 TO-3P 2N6489 TO-220 B0378 . TO-126 B0240A TO-220
BC300 TO-39 2N1893 TO-39 B0214-45 TO-3P 2N6489 TO-220 B0379 TO-126 B0239B TO-220
BC301 TO-39 2N699 TO-39 B0214-60 TO-3P 2N6490 TO-220 B0380 TO-126 B0240B TO-220
BC302 TO-39 2N2270 TO-39 B0214-80 TO-3P 2N6491 TO-220 B0410 TO-126 RCPlll0 TO-202
BC303 TO-39 2N4314 TO-39 B0215 TO-66 2N3584 TO-66 B0515 TO-202 RCP701A TO-202
BC304 TO-39 2N4037 TO-39 B0216 TO-66 2N3585 TO-66 B0516 TO-202 RCP700A TO-202
BC310 TO-39 2N1893 TO-39 B0244A TO-220 B0244A TO-220 B0517 TO-202 RCP701 B TO-202
BC311 TO-39 2N4314 TO-39 B0244B TO-220 B0244B TO-220 B0518 TO-202 RCP701C TO-202
BC323 TO-39 2N5320 TO-39 B0244C TO-220 B0244C TO-220
B0245 TO-3P 2N6486 TO-220 B0519 TO-202 RCP701C TO-202
BC324 TO-39 2N5320 TO-39 B0245A TO-3P 2N6487 TO-220 B0520 TO-202 RCP700C TO-202
BC429 TO-39 2N2270 TO-39 B0245B TO-3P 2N6488 TO-220 B0525 TO-202 RCP701B TO-202
BC430 TO-39 2N2270 TO-39 B0246 TO-3P 2N6489 TO-220 B0526 TO-202 RCP700B TO-202
BC440 TO-39 2N5321 TO-39 B0246A TO-3P 2N6490 TO-220 B0527 TO-202 RCP701C TO-202
BC441 TO-39 2N5320 TO-39
B0246B TO-3P 2N6491 TO-220 B0528 TO-202 RCP700C TO-202
BC460 TO-39 2N5323 TO-39
B0253 TO-3 BUX18B TO-3 B0529 TO-202 RCP7010 TO-202
BC461 TO-39 2N5322 TO-39 TO-202
B0253A TO-3 BUX18C TO-3 B0530 RCP7000 TO-202
BCW44 TO-39 40360 TO-39 B0575 B0241
B0253B TO-3 BU126 TO-3 Case TO-220
BCW45 TO-39 40362 TO-39 199
BCW77-16 TO-39 2N1711 TO-39 B0253C TO-3 TA8764 TO-3
B0260 TO-66 2N3584 TO-66 B0576 Case B0242 TO-220
BCW78-16 TO-39 2N1711 TO-39 B0261 TO-66 2N3584 TO-66 199
BCW79-16 TO-39 2N4037 TO-39 B0264 TO-220 RCA8203A TO-220 B0577 Case B0241A TO-220
BCW80-16 TO-39 2N4037 TO-39 B0264A TO-220 RCA8203B TO-220 199
BCY40 TO-39 2N4037 TO-39 B0264B TO-220 BOX34C TO-220 B0578 Case B0242A TO-220
BCY54 TO-39 2N4036 TO-39 199
B0265 TO-220 2N6387 TO-220
BOl15 TO-39 BF258 TO-39 B0265A TO-220 2N6388 TO-220 B0579 Case B0241 B TO-220
BOl16 TO-3 2N3055 TO-3 B0265B TO-220 BOX33C TO-220 199
B0141 TO-3 2N4347 TO-3 B0266 TO-220 BOX34A TO-220 B0580 Case B0242B TO-220
B0266A TO-220 BOX34B TO-220 199
B0144 TO-3 BUX18C TO-3 B0581 Case B0242C TO-220
B0148 TO-66 BOY71 TO-66 B0266B TO-220 BOX34C TO-220
B0267 TO-220 BOX33A TO-220 199
B0149 TO-66 BOY71 TO-66 B0582 Case B0242C TO-220
B0267A TO-220 BOX33B TO-220
B0160 TO-3 2N6510 TO-3 199
B0267B TO-220 BOX33C TO-220
B0162 TO-66 40250 TO-66 B0585 Case B0241
B0268 TO-220 BOX34A TO-220 TO-220
B0163 TO-66 2N6260 TO-66 199
B0185 TO-126 B0239 TO-220 80268A TO-220 BOX34B TO-220
B0269 TO-220 BOX33A TO-220 B0586 Case B0242 TO-220
B0186 TO-126 B0240 TO-220 199
B0269A TO-220 BOX33B TO-220
B0187 TO-126 B0239 TO-220
B0271 TO-220 B0241 TO-220 B0587 Case B0241A TO-220
B0188 TO-126 B0240 TO-220 199
80272 TO-220 B0242 TO-220
80189 TO-126 B0239A TO-220
B0273 TO-220 B0241A TO-220 B0588 Case B0242A TO-220
80190 TO-126 B0240A TO-220
B0274 TO-220 B0242A TO-220 199
30191 TO-66 2N3054 TO-66 B0589 Case B0241 B TO-220
B0275 TO-220 80241B TO-220
30192 TO-66 2N6260 TO-66 199
B0276 TO-220 B0242B TO-220
30195 Case 90 80243 TO-220 B0590
B0291 SOT-82 B0243 TO-220 Case B0242B TO-220
30196 Case 90 B0244 TO-220 199
30197 Case 90 B0243A TO-220 80292 SOT-82 B0244 TO-220 B0591 Case B0241C TO-220
30198 Case 90 B0244A TO-220 B0293 SOT-82 B0243A TO-220 199
30199 Case 90 C0243B TO-220 B0294 SOT-82 B0244A TO-220 B0592 Case B0242C TO-220
30200 Case 90 B0244B TO-220 B0301 TO-220 B0243 TO-220 199
30201 Case B0243 TO-220 B0302 TO-220 B0244 TO-220
B0595 Case B0243 TO-220
199 B0303 TO-220 B0243A TO-220 199
10202 Case B0244 TO-220 B0304 TO-220 B0244A TO-220 B0596 Case 80244 TO-220
199 B0311 TO-3 2N6471 TO-3 199
10203 Case B0243A TO-220 B0312 TO-3 2N6246 TO-3 B0597 Case B0243A TO-220
199 B0313 TO-3 2N6472 TO-3 199
10204 Case B0244A TO-220 B0314 TO-3 2N6247 TO-3 B0598 Case B0244A TO-220
199 B0315 TO-3 2N6472 TO-3 199
29
B0599 Case B0243B TO-220 B0701 Case BOX33C TO-220 BOY73 TO-3 2N3055 TO-3
199 199 BOY74 TO-3 2N4347 TO-3
B0600 Case B0244B TO-220 B0702 Case BOX34C TO-220 BOY76 TO-3 2N3772 TO-3
199 199 BOY77 TO-3 2N3773 TO-3
B0601 Case B0243C TO-220 BOY78 TO-66 2N6373 TO-66
199 B0705 TO-220 2N6486 TO-220 BOY79 TO-66 2N3583 TO-66
B0602 Case B0244C B0706 TO-220 2N6489 TO-220 BOY80A TO-220 2N5296 TO-220
TO-220
199 B0707 TO-220 2N6487 TO-220 BOY81A TO-220 2N5298 TO-220
B0605 Case 2N6486 B0708 TO-220 2N6490 TO-220
TO-220 BOY82A TO-220 2N6111 TO-220
199 B0709 TO-220 2N6488 TO-220 BOY83A TO-220 2N6109 TO-220
B0606 Case 2N6489 B0710 TO-220 2N6491 TO-220 BOY91 TO-3 2N5038 TO-3
TO-220
199 BOX14 TO-66 2N3054 TO-66 BOY92 TO-3 2N5039 TO-3
B0607 Case BOX16 TO-66 BUX66 TO-66 BOY93 TO-3 BU126 TO-3
2N6487 TO-220
199 BOX27 TO-66 2N3879 TO-66 BOY94 TO-3 BU126 TO-3
BOX28 TO-66 2N3879 TO-66 BOY95 TO-3
B0608 Case 2N6490 TO-220 BU126 TO-3
199 BOX30 TO-66 2N6500 TO-66 BOY96 TO-3 2N6513 TO-3
B0609 Case 2N6488 TO-220 BOX53 TO-220 BOX33 TO-220 BOY97 TO-3 2N6512 TO-3
199 BOX53A TO-220 BOX33A TO-220 BOY98 TO-3 2N6511 TO-3
B0610 Case 2N6491 TO-220 BOX53B TO-220 BOX33B TO-220 BOY99 TO-3 2N6511 TO-3
199 BOX53C TO-220 BOX33C TO-220 BF111 TO-39 2N3440 TO-39
B0633 TO-220 40979 TO-220 BOX54 TO-220 BOX34 TO-220 NF137 TO-5 BF257 TO-39
B0634 TO-220 40980 TO-220 BOX54A TO-220 BOX34A TO-220 BF157 TO-39 BF257 TO-39
B0635 TO-220 40871 TO-220 BOX54B TO-220 BOX34B TO-220 BF174 TO-39 BF257 TO-39
B0636 TO-220 40872 TO-220 BOX54C TO-220 BOX34C TO-220 BFl77 TO-39 40360 TO-39
B0637 TO-220 40871 TO-220 BOX60 TO-3 2N6254 TO-3 BF178 TO-39 40412 TO-39
B0638 TO-220 40872 TO-220 BOX61 TO-3 2N3055 TO-3 BF179 TO-39 BF257 TO-39
B0643 TO-220 BOX33 TO-220 BOX62 TO-3 RCA8350A TO-3 BF179A TO-39 BF257 TO-39
B0644 TO-220 BOX34 TO-220 BOX62A TO-3 RCA8350B TO-3 BF179B TO-39 BF258 TO-39
B0645 TO-220 BOX33A TO-220 BOX63 TO-3 2N6384 TO-3 BF179C TO-39 BF258 TO-39
B0646 TO-220 BOX34A TO-220 BOX63A TO-3 2N6385 TO-3 BF305 TO-39 BF257 TO-39
B0647 TO-220 BOX33B TO-220 BOX64 TO-3 BOX84A TO-3 BF322 TO-39 40317 TO-39
B0648 TO-220 BOX34B TO-220 BOX64A TO-3 BOX84B TO-3 BF323 TO-39 40319 TO-39
B0661 TO-220 2N6486 TO-220 BOX64B TO-3 BOX84C TO-3 BF336 TO-39 BF258 TO-39
B0662 TO-220 2N6489 TO-220 BOX65 TO-3 BOX83A TO-3 BF337 TO-39 BF258 TO-39
B0663 TO-220 2N6486 TO-220 BOX65A TO-3 BOX83B TO-3 BF338 TO-39 BF258 TO-39
B0663B TO-220 2N6486 TO-220 BOX65B TO-3 BOX83C TO-3 BF355 TO-39 2N3440 TO-39
B0664 TO-220 2N6489 TO-220 BOX77 TO-220 B0243B TO-220 BF380 TO-202 RCPl13A TO-202
B0695 Case BOX33 TO-220 BOX78 TO-220 B0244B TO-220 BF381 TO-202 RCPl13B TO-202
199 BOY10 TO-3 2N6253 TO-3 BF382 TO-202 RCP113C TO-202
BOY12 TO-3 BUX16 TO-3 BF390 TO-39 BF259 TO-39
B0695A Case BOX33 TO-220
BOY13 TO-3 BUX16 TO-3 BFR19 TO-39 2N1613 TO-39
199
BOY15 TO-3 BUX16 TO-3 BFR20 TO-39 2N 1711 TO-39
B0696 Case BOX34 TO-220 BOY17 TO-3 BUX16 TO-3 BFR21 TO-39 2N1893 TO-39
199 BOY20 TO-3 BUX16 TO-3
B0696A Case BOX34 TO-220 BOY25A TO-3 BUX16 TO-3 BFR22 TO-39 2N2102 TO-39
199 BFR23 TO-39 2N4036 TO-39
BOY25B TO-3 BUX16 TO-3
B0697 Case BOX33A TO-220 BFR24 TO-39 2N4037 TO-39
BOY25C TO-3 BUX16 TO-3
199 BFR56 TO-39 2N5321 TO-39
BOY26A TO-3 BUX16 TO-3
B0697A Case BOX33A TO-220 BFR57 TO-39 BF257 TO-39
199 BOY26C TO-3 BUX16 TO-3 BFR58 TO-39 BF258 TO-39
B0698 Case BOX34A TO-220 BFR59 TO-39 BF259 TO-39
BOY27A TO-3 BUX16 TO-3
199 BFR77 TO-39 2N1893 TO-39
B0698A Case BOX34A TO-220 BFR78 TO-39 2N2405 TO-39
BOY27C TO-3 BUX16 TO-3
199 BFS90 TO-39 40987 TO-39
BOY28A TO-3 BUX16A TO-3
B0699 Case BOX33B TO-220 BOY28B TO-3 BUX16A TO-3 BFS90A TO-39 40987 TO-39
199 BFS91 TO-39 40999 TO-39
B0699A Case BOX33B TO-220 BOY28C TO-3 BUX1.6A TO-3
BFS91A TO-39 40999 TO-39
199 BOY38 TO-3 2N6253 TO-3 BFS92 TO-39 2N4036 TO-39
B0700 Case BOX34B TO-220 BOY39 TO-3 2N3055 TO-3 BFS93 TO-39 2N4314 TO-39
199 BOY55 TO-3 2N5039 TO-3
BOY56 TO-3 2N5038 TO-3 BFS94 TO-39 2N4037 TO-39
B0700A Case BOX34B TO-220 BFS95 TO-39 2N4037 TO-39
199 BOY57 TO-3 41012 TO-3
BOY58 TO-3 41013 TO-3 BFT32 TO-39 40635 TO-39
30
BFT33 TO-39 40409 TO-39HR BSS45 TO-39 2N5320 TO-39 BUX39 TO-3 2N5038 TO-3
BFT34 TO-39 2N2405 TO-39 BSS46 TO-39 2N5322 TO-39 BUX40 TO-3 2N6354 TO-3
BFT35 TO-39 2N4314 TO-39 BSS48 TO-39 2N3440 TO-39 BUX41 TO-3 BUX17A TO-3
BFT36 TO-39 40410 TO-39HR BSS49 TO-39 2N3439 TO-39 BUX42 TO-3 BUX17B TO-3
BFT39 TO-39 40409 TO-39HR BSV15 TO-39 2N4037 TO-39 BUX43 TO-3 BUX17C TO-3
BFT40 TO-39 40628 TO-39HR BSV15-6 TO-39 2N4037 TO-39 BUX44 TO-3 BUX18C TO-3
BFT41 TO-39 40628 TO-39HR BSV15-10 TO-39 2N4037 TO-39 BUX84 TO-220 TA8863A TO-220
BFT44 TO-39 BF259 TO-39 BSV16 TO-39 2N4314 TO-39 BUY35 TO-3 2N6511 TO-3
BFT45 TO-39 BF258 TO-39 BSV16-6 TO-39 2N4314 TO-39 BUY43 TO-66 BOY71 TO-66
BFT60 TO-39 2N4037 TO-39 BSV16-10 TO-39 2N4314 TO-39 BUY46 TO-66 2N3054 TO-66
BFT61 TO-39 2N4037 TO-39 BSV17 TO-39 2N5322 TO-39 BUY55 TO-3 2N5239 TO-3
BFT62 TO-39 40815 TO-39 BSV69 TO-39 2N5321 TO-39 BUY56 TO-3 2N5239 TO-3
BFT80 TO-39 40815 TO-39 BSV77 TO-39 2N5321 TO-39 BUY66 TO-3 BU126 TO-3
BFW24 TO-39 2N2102 TO-39 BSV84 TO-39 2N1893 TO-39 BUY67 TO-3 BU126 TO-3
BFW25 TO-39 2N1711 TO-39 BSW23 TO-39 2N4037 TO-39 BUY69B TO-3 BU126 TO-3
BFW26 TO-39 2N697 TO-39 BSW39 TO-39 2N1893 TO-39 BUY69C TO-3 BU126 TO-3
BFW33 TO-39 2N1893 TO-39 BSX22 TO-39 2N5321 TO-39 BUY70B TO-3 BU126 TO-3
BFW44 TO-39 BFT19 TO-39 BSX23 TO-39 2N5320 TO-39 BUY70C TO-3 BU126 TO-3
BFW45 TO-39 BF257 TO-39 BSX40 TO-39 2N4037 TO-39
BSX45 TO-39 2N3053 TO-39 BUY72 TO-3 2N5239 TO-3
BFX17 TO-39 2N3053 TO-39 BUY74 TO-3 BUX18A TO-3
BFX29 TO-39 2N4036 TO-39 BSX46 TO-39 2N2102 TO-39 BUY75 TO-3 BUX18C TO-3
BFX30 TO-39 2N4036 TO-39 BSX47 TO-39 2N1893 TO-39 BUY76 TO-3 BU126 TO-3
BFX39 TO-39 2N4036 TO-39 BSX59 TO-39 2N5321 TO-39 BUY77 TO-3 BUX18A TO-3
BFX68 TO-39 2N1711 TO-39 BSX60 TO-39 2N5321 TO-39
BFX68A TO-39 2N1711 TO-39 BSX61 TO-39 2N5321 TO-39 BUY78 TO-3 BUX18C TO-3
BFX69 TO-39 2N697 TO-39 BSX72 TO-39 2N3053 TO-39 BUY79 TO-3 BUX126 TO-3
BFX69A TO-39 2N1613 TO-39 BSX95 TO-39 2N1613 TO-39 04001 TO-202 RCP707 TO-202
BSX96 TO-39 2N1711 TO-39 04002 TO-202 RCP707 TO-202
BFX74 TO-39 2N4037 TO-39
BSY25 TO-39 2N697 TO-39 04003 TO-202 RCP707 TO-202
BFX74A TO-39 2N4314 TO-39
BFX85 TO-39 2N2405 TO-39 BSY44 TO-39 2N699 TO-39 04004 TO-202 RCP707 TO-202
BFX86 TO-39 2N1711 TO-39 BSY45 TO-39 2N1893 TO-39 04005 TO-202 RCP707 TO-202
BFX87 TO-39 2N4036 TO-39 BSY46 TO-39 2N699 TO-39 04006 TO-202 RCP701 B TO-202
BSY51 TO-39 2N697 TO-39 04007 TO-202 RCP701 B TO;202
BFX88 TO-39 2N4037 TO-39
04008 TO-202 RCP701 B TO·202
BFX91 TO-39 BFT28B TO-39
BFX98 TO-39 BF257 TO-39 BSY52 TO-39 2N1711 TO-39 040010 TO-202 RCP701 C TO-202
BFY10 TO-39 40814 TO-39 BSY53 TO-39 2N697 TO-39 040011 TO-202 RCP701 C TO-202
BFY11 TO-39 40814 TO-39 BSY54 TO-39 2N1711 TO-39 040013 TO-202 RCP701 C TO-202
BFY17 TO-39 40317 TO-39 BSY55 TO-39 2N1893 TO-39 040E1 TO-202 RCP705 TO-202
BFY33 TO-39 2N697 TO-39 BSY68 TO-39 2N2405 TO-39 040E5 TO-202 RCP701 B TO-202
BFY34 TO-39 2N697 TO-39 BSY71 TO-39 2N1711 TO-39
BFY40 040E7 TO-202 RCP701C TO-202
TO-39 40320 TO-39 BSY81 TO-39 2N697 TO-39
-BSY82 040N1 TO-202 RCP113B TO-202
BFY43 TO-39 BF257 TO-39 TO-39 2N1711 TO-39
040N2 TO-202 RCPlll B TO-202
040N3 TO-202 RCPl13C TO-202
BFY45 TO-39 40408 TO-39 BSY84 TO-39 2N1711 TO-39
040N4 TO-202 RCPlllC TO-202
040N5 TO-202 RCPlll C TO-202
040Pl TO-202 2N6175 TO-5P
BSY92 TO-39 2N1711 TO-39 040P3 TO-202 2N6175 TO-5P
BFY52 TO-39 2N3053 TO-39
BFY55 TO-39 2N697 TO-39 BU102 TO-3 BUX18B TO-3 040P5 TO-202 2N6175 TO-5P
BFY56 TO-39 2N699 TO-39 BUlll TO-3 2N6512 TO-3
04101 TO-202 RCP706 TO-202
BFY57 TO-39 BF257 TO-39 BUl14 TO-3 2N6510 TO-3 04102 TO-202 RCP706B TO-202
BFY67 TO-39 2N3053 TO-39 BU121 TO-3 BUX18 TO-3 04104 TO-202 RCP706B TO-202
BFY67A TO-39 2N1613 TO-39 BU129 TO-3 BUX18C TO-3
BFY68 TO-39 2N1711 TO-39 BU134 TO-3 BU126 TO-3 04105 TO-202 RCP700B TO-202
BFY70 TO-39 2N3053 TO-39 BU135 TO-3 2N6510 TO-3 04106 TO-202 RCP700B TO-202
BFY94 TO-39 40594 TO-39 BU136 TO-3 2N6510 TO-3 04107 TO-202 RCP700B TO-202
BSS15 TO-39 2N5320 TO-39 BU310 TO-3 BUX17 TO-3 04108 TO-202 RCP700B TO-202
BSS16 TO-39 2N5321 TO-39 BU311 TO-3 BUX17 TO-3 041010 TO-202 RCP700C TO-202
3SS17 TO-39 2N5322 TO-39 BU312 TO-3 BUX17 TO-3 041011 TO-202 RCP700C TO-202
3SS18 TO-39 2N5323 TO-39 BU409 TO-220 T A8863J TO-220 041013 TO-202 RCP700C TO-202
3SS30 TO-39 2N2102 TO-39 BUX26 TO-3 2N6510 TO-3 041El TO-202 RCP704 TO-202
3SS32 TO-39 2N2405 TO,33 BUX27 TO-3 BUX18C TO-3 041E5 TO-202 RCP700B TO-202
31
Type Package Type Package I Type Package Type Package Type Package Type Package
D41E7 TO-202 RCP700C TO-202 D44C9 TO-220 2N6292 TO-220 DTS423 TO-3 RCA423 TO-3
D42C1 TO-202 2N6288 TO-220 BD239A TO-220 DTS431 TO-3 RCA431 TO-3
RCP707 TO-202 D44C10 TO-220 2N6292 TO-220 ESM113 TO-3 2N6384 TO-3
D42C2 TO-202 2N6288 TO-220 BD239B TO-220 ESM114 TO-3 2N6385 TO-3
RCP705 TO-202 D44C11 TO-220 2N6292 TO-220 ESM159 TO-3 RCA8350A TO-3
D42C3 TO-202 2N6288 TO-220 BD239B TO-220 ESM160 TO-3 RCA8350B TO-3
RCP705 TO-202 D44C12 TO-220 BD239B TO-220 ESM213 TO-220 2N6387 TO-220
D42C4 TO-202 2N6290 TO-220 D44E1 TO-220 2N6386 TO-220 ESM214 TO-220 2N6388 TO-220
RCP703A TO-202 D44E2 TO-220 2N6387 TO-220 ESM217 TO-220 2N6387 TO-220
D42C5 TO-202 2N6290 TO-220 D44E3 TO-220 2N6388 TO-220 ESM218 TO-220 2N6388· TO-220
RCP701A TO-202 D44Hl TO-220 2N6288 TO-220 ESM259 TO-220 RCA8203A TO-220
D42C6 TO-202 2N6290 TO-220 D44H2 TO-220 2N6288 TO-220 ESM260 TO-220 RCA8203B TO-220
RCP701A TO-202 D44H4 TO-220 2N6290 TO-220 ESM261 TO-220 RCA8203A TO-220
D42C7 TO-202 2N6292 TO-220 D44H5 TO-220 2N6290 TO-220 ESM262 TO-220 RCA8203B TO-220
RCP703B TO-202 FT410 TO-3 RCA410 TO-3
D44H7 TO-220 2N6292 TO-220
D42C8 TO-202 2N6292 TO-220 D44H8 TO-220 2N6292 TO-220 FT411 TO-3 RCA411 TO-3
RCP701 B TO-202 D44H10 TO-220 2N6292 TO-220 FT413 TO-3 RCA413 TO-3
D42C9 TO-202 2N6292 TO-220 FT42.3 TO-3 RCA423 TO-3
RCP701 B TO-202 D44H11 TO-220 2N6292 TO-220 FT431 TO-3 RCA431 TO-3
D44Rl TO-220 TA8863B TO-220
D42C10 TO-202 2N6292 TO-220 MJ400 TO-66 2N3585 TO-66
D44R2 TO-220 TA8863B TO-220
RCP703C TO-202 D44R3 TO-220 TA8863B TO,220 MJ410 TO-3 RCA410 TO-3
D42Cl1 TO-202 2N6292 TO-220 D44R4 TO-220 TA8863B TO-220 MJ411 TO-3 RCA411 TO-3
RCP701 C TO-202 MJ413 TO-3 RCA413 TO-3
D42C12 TO-202 RCP701 C TO-202 D44R5 TO-220 TA8863F TO-220
MJ420 TO-39 BF258 TO-39
D44R6 TO-220 TA8863F TO-220
D43Cl TO-202 2N6111 TO-220 D45C1 TO-220 2N6111 TO-220 MJ423 TO-3 RCA423 TO-3
RCP706 TO-202 BD240 TO-220 MJ424 TO-3 BUX16C TO-3
D43C2 TO-202 2N6111 TO-220 D45C2 TO-220 2N6111 TO-220 MJ425 TO-3 BUX18C TO-3
RCP704 TO-202 BD240 TO-220 MJ431 TO-3 RCA431 TO-3
D43C3 TO-202 2N6111 TO-220 MJ450 TO-3 2N6246 TO-3
RCP704 TO-202 D45C3 TO-220 2N6111 TO-220
BD240 TO-220 2N6469 TO-3
D43C4 TO-202 2N6109 TO-220 D45C4 TO-220 2N6109 TO-220 MJ480 TO-3 2N6470 TO-3
RCP702A TO-202 BD240 TO-220 MJ481 'TO-3 2N6471 TO-3
D43C5 TO-202 2N6109 TO-220 D45C5 TO-220 2N6109 TO-220 MJ490 TO-3 2N6246 TO-3
RCP700A TO-202 BD240 TO-220 2N6469 TO-3
D43C6 TO-202 2N6109 TO-220 MJ491 TO-3 2N6246 TO-3
RCP700A TO-202 D45C6 TO-220 2N6109 TO-220
BD240 TO-220 MJ802 TO-3 RCS258 TO-3
D43C7 TO-202 2N6107 TO-220 D45C7 TO-220 2N6107 TO-220 MJ900 TO-3 RCA8350A TO-3
RCP702B TO-202 BD240A TO-220 MJ901 TO-3 RCA8350B TO-3
D43C8 TO-202 2N6107 TO-220 D45C8 TO-220 2N6107 TO-220 MJ920 Tb-3 RCA8350A TO-3
RCP700B TO-202 BD240A TO-220 MJ921 TO-3 RCA8350B TO-3
D43C9 TO-202 2N6107 TO-220 MJ1000 Tb-3 RCA1000 TO-3
D45C9 TO-220 2N6107 TO-220
RCP700B TO-202 MJ1001 TO-3 RCA1001 TO-3
BD240A TO-220
D43Cl0 TO-202 2N6107 TO-220 D45C10 TO-220 2N6107 TO-220 MJ1200 TO-3 2N6384 TO-3
RCP700B TO-202 BD240B TO-220 MJ1201 TO-3 2N6385 TO-3
D43Cl1 TO-202 2N6107 TO-220 D45C11 TO-220 2N6107 TO 220 MJ1800 TO-3 2N5838 TO-3
RCP700C TO-202 BD240B TO-220 BUX16C TO-3
D43C12 TO-202 RCP700C TO-202 MJ2249 TO-66 2N3879 TO-66
D45C12 TO-220 BD240B TO-220
D44Cl TO-220 2N6288 TO-220 D45El TO-220 2N6666 TO-220 MJ2250 TO-66 2N3879 TO-66
BD239 TO-220 D45E2 TO-220 2N6667 TO-220 MJ2251 TO-66 2N3584 TO-66
D44C2 TO-220 2N6288 TO-220 D45E3 TO-220 2N6668 TO-220 BUX67B
BD239 TO-220 D45H1 TO-220 2N6111 TO-220 MJ2252 TO-66 2N3585 TO-66
D44C3 TO-220 2N6288 TO-220 BUX67C TO-66!
TO-220 D45H2 TO-220 2N6111 TO-220
BD239 MJ2253 TO-66 2N5955 TO-66
D45H4
1
D44C4 TO-220 2N6290 TO-220 TO-220 2N6109 TO-220

MJ2254 TO-66 2N5954 TO-66
BD239 TO-220 D45H5 TO-220 2N6109 TO-220
MJ2267 TO-3 2N6246 TO-3 I
044C5 TO-220 2N6290 TO-220 D45H7 TO-220 2N6107 TO-220
2N6469 TO-3 I
BD239 TO-220 045H8 TO-220 2N6107 TO-220 MJ2268 TO-3 2N6246 TO-3
D44C6 TO-220 2N6290 TO-220 D45H10 TO-220 2N6107 TO-220 MJ2500 TO-3 2N6649 TO-204M~
BD239 TO-220 D45H11 TO-220 2N6107 TO-220
RCA8350A TO-3 !
D44C7 TO-220 2N6292 TO-220 DTS410 TO-3 RCA410 TO-3 MJ2501 TO-3 2N6650 TO-204M,
BD239A TO-220 DT5411 TO-3 ReA411 TO-3
RCA8350B TO-3
044C8 TO-220 2N6292 TO-220 OT5413 TO-3 RCA413 TO-3 MJ2801 TO-3 2N6371 TO-3
B0239A TO-220
32
• JEDEC TO-204MA was formerly designated JEDEC TO-3.
MJ2840 TO·3 2N3055 TO·3 MJE29B Case B0239B TO·220 MJE105 Case 90 B0278A TO·220
2N6471 TO·3 199 MJE105K Case B0278A TO·220
MJ2841 TO·3 2N6254 TO·3 MJE29C Case B0239C TO·220 199
2N6472 TO·3 199 MJE205 Case 90 2N6290 TO·220
MJ2901 TO·3 2N6246 TO·3 MJE30 Case B0240 TO·220 B0277 TO·220
2N6249 TO·3 199 MJE205K Case B0277 TO·220
MJ2940 TO·3 2N6246 TO·3 MJE30A Case B0240A TO·220 199
BOX18N TO·3 199 MJE340K Case TA8863B TO·220
MJ2941 TO·3 2N6247 TO·3 MJE30B Case B0240B TO·220 199
MJ3000 TO·3 2N6384 TO·3 199 MJE341K Case TA8863J TO·220
MJ3001 TO·3 2N6385 TO·3 MJE30C Case B0240C 199
TO·220
MJ3010 TO·3 BUX16B TO·3 199 'MJE344K Case TA8865J TO·220
MJ3011 TO·3 BUX16B TO·3 MJE31 Case B0241 TO·220 199
MJ3026 TO·3 2N5839 TO·3 199 MJE370 Case 77 RCA30 TO·220
MJ3027 TO·3 2N5840 TO·3 MJE31A Case BD241A MJE370K Case B0242 TO·220
TO·220
BUX126 TO·3 199 199
MJ3028 TO·3 2N5840 TO·3
MJE31B Case B0241 B TO·220 MJE371 Case 77 RCA30 TO·220
BUX126 TO·3 MJE520
199 Case 77 RCA29 TO·220
MJ3029 TO·3 BUX16A TO·3
MJE31C Case B0241C TO·220 MJE520K Case B0241 TO·220
MJ3030 TO·3 BUX16C TO·3
199 199
MJ3101 TO·66 2N3878 TO·66
MJE521
TO·220 Case 77 RCA29 TO·220
MJ3201 TO·66 BUX67A TO·66 MJE32 Case B0242
199 MJE700 TO·126 RCA125 TO·220
MJ3202 TO·66 2N3585 TO·3
MJE32A Case B0242A TO·220 2N6667 TO·220
BUX67B TO·66
199 MJE701 TO·126 RCA125 TO·220
MJ3430 TO·3 2N5840 TO·3
MJE32B Case B0242B TO·220 2N6667 TO·220
BUX18B TO·3
199 MJE702 TO·126 RCA126 TO·220
MJ3583 TO·66 2N6211 TO·3 2N6668 TO·220
MJ3584 TO·66 2N6212 TO·66 MJE32C Case B0242C TO·220
199 MJE703 TO·126 RCA126 TO·220
MJ3585 TO·66 2N6212 TO·66
2N6668
MJE33 Case 2N6486 TO·220 TO·220
MJ3701 TO·66 2N5956 TO·66
199 MJE800 TO· 126 2N6387 TO·220
MJ3760 TO·3 BU126 TO·3
MJE33A Case 2N6487 TO·220 RCA120 TO·220
MJ3761 TO·3 BU126 TO·3 MJE801 TO· 126 2N6387 TO·220
199
MJ3771 TO·3 2N3771 TO·3 RCA120 TO·220
MJ3772 TO·3 2N3772 TO·3 MJE33B Case 2N6488 TO·220
199 MJE802 TO·126 2N6388 TO·220
MJ3773 TO·3 2N3773 TO·3
MJE34 Case 2N6489 TO·220 RCA121 TO·220
MJ4000 TO·3 2N6384 TO·3
199 MJE803 TO·126 2N6388 TO·220
RCA1000 TO·3
MJE34A Case 2N6490 TO·220 RCA121 TO·220
MJ4001 TO·3 2N6385 TO·3 199 MJE1090 Case 90 2N6667 TO·220
RCA100l TO·3 2N6491 TO·220 BOX34A TO·220
MJE34B Case
MJ4010 TO·3 2N6649 TO·204MA· 199 MJE1091 Case 90 2N6667 TO·220
2N6667 TO·3 MJE41 Case B0243 TO·220 BOX34A TO·220
MJ4011 TO·3 2N6650 TO·204MA· 199 MJE1092 Case 90 2N6667 TO·220
2N6668 TO·3 MJE41A Case B0243A TO·220 BOX34B TO·220
MJ4502 TO·3 2N6248 TO·3 TO·220 BOX34B TO·220
MJE41B Case B0243B
MJ5415 TO·39 2N5415 TO·39 199 MJEll00 Case 90 2N6387 TO·220
MJ5416 TO·39 2N5416 TO·39 Case B0243C TO·220 BOX33A TO·220
MJE41C
MJ5600 TO·3 2N3772 TO·3 MJEll01 Case 90 2N6387 TO·220
199
MJ5601 TO·3 2N6258 TO·3 MJE42 Case B0244 TO·220 BOX33A TO·220
MJ5603 TO·3 2N3773 TO·3 TO·220 BOX33B TO·220
MJE42A Case B0244A
MJ6001 TO·3 2N6258 TO·3 MJE42B Case B0244C TO·220 BOX33B TO·220
MJ6003 TO·3 2N6258 TO·3 MJE42C Case B0244C TO·220 MJE1291 Case 90 2N6490 TO·220
MJ6302 TO·3 2N3773 TO·3 MJE47 Case TA8863C TO·220 MJE1661 Case 90 2N6487 TO·220
MJ7000 TO·63 2N3265 TO·63 199 MJE2010 Case B0244 TO·220
MJE29 Case B0239 TO·220 MJE48 Case TA8863B TO·220 199
199 199 MJE2011 Case B0244A TO·220
MJE29A Case B0239A TO·220 MJE49 Case TA8863A TO·220 199
199 199 MJE2020 Case B0243 TO·220
199
33
MJE2021 Case BD243A TO-220 MJE3055 Case 90 RCA3055 TO-220 MJE6044 Case 90 2N6530 TO-220
199 MJE3055K Case RCA3055 TO-220 BDX33B TO'220
MJE2050 Case 40979 TO-220 199 MJE6045 Case 90 RCA 122 TO-220
199 RCA1Cl0 TO-220 MJE3370 Case B0242 TO-220 BDX33C TO-220
MJE2090 Case RCA8203A TO-220 199 MM3005 TO-39 40635 TO-39
199 BDX34A TO-220 MJE3371 Case 90 40980 TO-220 RCA1A06 TO-39
MJE2091 Case RCA8203A TO-220 RCAl Cll TO-220 MM4000 TO-39 BFT28 TO-39
199 BDX34A TO-220 MJE3439 TO-126 RCPll10 TO-220 MM4001 TO-39 BFT28A TO-39
MJE2092 Case RCA8203B TO-220 MJE3740 Case 2N6107 TO-220 MM4002 TO-39 BFT28B TO-39
199 BDX34B TO-220 199 MM4003 TO-39 BFT28C TO-39
MJE2093 Case RCA8203B TO-220 MJE3741 Case 2N6107 TO-220 MM5005 TO-39 40634 TO-39
199 BDX34B TO-220 199 RCA1A05 TO-39
MJE2100 Case 2N6387 TO-220 MJE4918 Case B0240 TO-220 MPSU01 Case RCP705 TO-202
199 BDX33A TO-220 199 152
MJE2101 Case 2N6387 TO-220 MPSU02 Case RCP701B TO-202
MJE4919 Case BD240A TO-220
199 BDX33A TO-220 152
199
MJE2102 Case 2N6388 TO-220 MJE4920 Case BD240B TO-220 MPSU05 Case RCP701 B TO-202
199 BDX33B TO-220 199 152
MJE2103 Case 2N6388 TO-220 MJE4921 Case BD239 TO-220 MPSU06 Case RCP701C TO-202
199 BDX33B TO-220 199 152
MJE2160 Case 90 TA8863B TO-220 MJE4922 Case BD239A TO-220 MPSU07 Case RCP701 D TO-202
MJE2360 Case TA8863E TO-220 199 152
199 MJE4923 Case BD239B TO-220 MPSU10 Case RCP111 D TO-202
MJE2361 Case TA8863A TO-220 199 152
199 MJE5655 Case TA8863J TO-220 MPSU51 Case RCP704 TO-202
MJE2370 Case 2N6109 TO-220 199 152
199 BD240 TO-220 MJE5656 Case TA8863F TO-220 MPSU52 Case RCP700A TO-202
MJE2371 Case 2N6107 TO-220 199 152
199 BD240A TO-220 MJE5657 Case TA8863E TO-220 MPSU55 Case RCP700B TO-202
MJE2480 Case 2N6290 TO-220 199 152
199 BD243 TO-220 MJE5974 Case 2N6489 TO-220 MPSU56 Case RCP700C TO-202
MJE2481 Case 2N6292 TO-220 199 152
199 BD243A TO-220 MJE5975 Case 2N6490 TO-220 MPSU57 Case RCP700D TO-202
MJE2482 Case 2N6290 TO-220 199 152
199 B0243 TO-220 MJE5976 Case 2N6491 TO-220 NS0102 TO-202 RCP701 B TO-202
MJE2483 Case 2N6292 TO-220 199 NS0103 TO-202 RCP701 B TO-202
199 BD243A TO-220 MJE5977 Case 2N6486 TO·nO NS0104 TO-202 RCP701C TO·202
MJE2490 Case 2N6109 TO-220 199 NS0105 TO-202 RCP701 C TO-202
199 BD244 TO·220 MJE5978 Case 2N6487 TO-220 NS0106 TO-202 RCP701 D TO-202
MJE2491 Case 2N6107 TO-220 199 NS0131 TO-202 RCPl13B TO-202
199 BD244A TO-220 MJE5979 Case 2N6488 TO-220 NS0132 TO-202 RCP111 B TO-202
MJE2520 Case 2N6290 TO-220 199 NSD133 TO-202 RCP113C TO-202
199 B0239 TO-220 MJE5980 Case 2N6489 TO·nO NSD134 TO-202 RCP111 C TO-202
MJE2521 Case 2N6292 TO-220 199 NS0135 TO-202 RCP1110 TO-202
199 BD239A TO-220 MJE5981 Case 2N6490 TO-220 NS0202 TO-202 RCP700B TO-202
MJE2522 Case 2N6290 TO-220 199 NS0203 TO-202 RCP700B TO-202
199 B0241 TO-220 MJE5982. Case 2N6491 TO-220 NS0204 TO-202 RCP700C TO·202
MJE2523 Case 2N6292 TO-220 199 NS0205 TO-202 RCP700C TO-202
199 BD241A TO-220 MJE5983 Case 2N6486 TO-220 NS0206 TO-202 RCP7000 TO-202
MJE2801 Case 90 2N6290 TO-220 199 SOT410 TO-3 RCA410 TO-3
2N6487 TO·220 MJE5984 Case 2N6487 TO-220 SOT411 TO-3 RCA411 TO-3
MJE2801 K Case 2N6487 TO-220 199 SDT413 TO-3 RCA413 TO-3
199 MJE5985 Case 2N6488 TO·220 SDT423 TO·3 RCA423 TO-3
MJE2901 Case 90 2N6107 TO-220 199 SOT431 TO-3 RCA431 TO-3
2N6490 TO·220 MJE6040 Case 90 RCA125 TO-220 SOT6901 TO·66 2N6078 TO-66
MJE2901 K Case 2N6490 TO·220 BOX34A TO-220 SDT6902 TO-66 2N6078 TO-66
199 MJE6041 Case 90 RCA125 TO-220 SDT6903 TO-66 2N6078 TO-66
MJE2955 Case 90 2N6490 TO·220 BOX34B TO·220 SOT6904 TO-66 2N6078 TO-66
40878 TO-220 MJE6042 Case 90 RCA126 TO·220 SOT6905 TO-66 2N6078 TO-66
MJE2955K Case 2N6490 TO·220 BDX34C TO-220 SDT6906 TO-66 2N6078 TO-66
199 40878 TO-220 MJE6043 Case 90 2N6387 TO-220
MJE3054 Case RCA3054 SDT6907 TO-66 2N6078 TO-66
TO·220 BDX33A TO·220 SOT6908 TO·66 2N6078 TO-66
199
34
SOT7601 TO-3 2N5039 TO-3 T1484 TO-39 2N697 TO-39 TIP41 B TO-220 B0243B TO-220
SOT7602 TO-3 2N5039 TO-3 T1492 TO-39 40407 TO-39 RCA41B TO-220
SOT7603 TO-3 2N5038 TO-3 T1493 TO-39 2N1613 TO-39 TIP41 B TO-220
SOT7604 TO-3 2N6496 TO-3 TIP29 TO-220 B0239 TO-220 TIP41 C TO-220 B0243C TO-220
SOT7605 TO-3 2N6249 TO-3 RCA29 TO-220 RCA41C TO-220
SOT7607 TO-3 2N5039 TO-3 TIP29 TO-220 TIP41C TO 220
SOT7608 TO-3 2N5039 TO-3 TIP42 TO-220 B0244 TO-220
TIP29A TO-220 B0239A TO-220
SOT7609 TO-3 2N5038 TO-3 RCA42 TO-220
RCA29A TO-220
SOT7610 TO-3 2N6354 TO-3 TIP29A TO-220 TIP42 TO-220
SOT7731 TO-3 2N6470 TO-3 TIP29B TO-220 B0239B TO-220 TIP42A TO-220 B0244A TO-220
SOT7732 TO-3 2N6471 TO-3 RCA29B TO-220 RCA42A TO-220
SOT7733 TO-3 2N6472 TO-3 TIP29B TO-220 TIP42A TO-220
SOT8002 TO-63 2N3266 TO-63 TO-220 B0239C TO-220 TIP42B TO-220 B0244B TO-220
TIP29C
SOT8003 TO-63 2N3265 TO-63 RCA29C TO-220 RCA42B TO-220
SOT8012 TO-63 2N3266 TO-63 TIP29C TO-220 TIP42B TO-220
SOT8013 TO-63 2N3265 TO-63 TIP30 TO-220 B0240 TO-220 TIP42C TO-220 B0244C TO-220
SOT8015 TO-63 2N3266 TO-63 RCA30 TO-220 RCA42C TO-220
SOT8016 TO-63 2N3265 TO-63 TIP30 TO-220 TIP42C TO-220
SOT8105 Radial 2N3264 Radial TIP30A TO-220 B0240A TO-220 TIP110 TO-220 BOX33A TO-220
SOT8106 Radial 2N3263 Radial RCA30A TO-220 TIP111 TO 220 BOX33B TO-220
SOT8112 Radial 2N3264 Radial TIP30A TO-220 TIP112 TO-220 BOX33C TO-220
SOT8113 Radial 2N3263 Radial TIP308 TO-220 B02408 TO-220 TIPl15 TO-220 BOX34A TO-220
SOT8301 TO-63 2N3266 TO-63 RCA308 TO-220 TIPl16 TO-220 BOX348 TO-220
SOT8302 TO-63 2N3265 TO-63 TIP308 TO-220 TIPl17 TO-220 80X34C TO-220
SOT8303 TO-63 2N3266 TO-63 TIP30C TO-220 80240C TO-220 TIP120 TO-220 BOX33A TO-220
SOT8304 TO-63 2N3265 TO-63 RCA30C TO-220 RCA120 TO-220
SOT9201 TO-3 2N3055 TO-3 TIP30C TO-220 TIP120 TO-220
SOT9202 TO-3 2N6254 TO-3 TIP31 TO-220 80241 TO-220 TIP121 TO-220 BOX33B TO-220
SOT9203 TO-3 2N4348 TO-3 RCA31 TO-220 RCA121 TO-220
SOT9204 TO-3 2N4348 TO-3 TIP31 TO-220 TIP121 TO-220
SOT9205 TO-3 2N3055 TO-3 TIP31A TO-220 80241A TO-220 TIP122 TO-220 BOX33C TO-nO
SOT9206 TO-3 2N3055 TO-3 RCA31 A TO-220 RCA122 TO-220
SOT9207 TO-3 2N6254 TO-3 TIP31A TIP122 TO-220
TO-220
SOT9208 TO-3 2N4348 TO-3 TIP318 TO-220 80241 B TO-220 TIP125 TO-220 80X34A TO-220
SOT9209 TO-3 2N4348 TO-3 RCA31 B TO-220 RCA125 TO-220
SOT9210 TO-3 2N6253 TO-3 TIP31 B TO-220 TIP125 TO-220
SOT9701 TO-3 2N6258 TO-3 TIP31C TO-220 80241C TO-220 TIP126 TO-220 BOX34B TO-220
SOT9702 TO-3 2N4348 TO-3 RCA31C TO-220 RCA126 TO-220
TIP31C TO-220 TIP126 TO-220
SOT9703 TO-3 2N4348 TO-3
SOT9704 TO-3 2N6254 TO-3 TIP32 TO-220 80242 TO-220 TIP127 TO-220 80X34C TO-220
SOT9705 TO-3 2N4348 TO-3 RCA32 TO-220 TIP127 TO-220
SOT9706 TO-3 2N4348 TO-3 TIP32 TO-220 TIP140 TO-218 2N6387 TO-220
SOT9707 TO-3 2N3055 TO-3 TIP32A TO-220 80242A TO-220 TIP141 TO-218 2N6530 TO-220
RCA32A TO-220 TIP142 TO-218 2N6531 TO-220
SOT9801 TO-3 2N6254 TO-3
SOT9802 TO-3 2N6254 TO-3 TIP32A TO-220 TIP145 TO-218 2N6666 TO-220
SOT9803 TO-3 2N6254 TO-3 TIP32B TO-220 80242B TO-220 TIP146 TO-218 2N6667 TO-220
SOT9804 TO-3 2N3773 TO-3 RCA32B TO-220 TIP147 TO-218 2N6668 TO-220
SE9300 TO-220 RCA120 TO-220 TIP328 TO-220 TIP525 TO-3 BUX27A TO-3
TIP32C TO-220 80242C TIP531 TO-3 2N6250 TO-3
SE9301 TO-220 RCA 121 TO-220 TO-220
SE9302 TO-220 RCA122 TO-220 RCA32C TO-220 TIP535 TO-3 BUX17A TO-3
SE9303 TO-3 2N6384 TO-3 TIP32C TO-220 TIP538 TO-3 2N6250 TO-3
SE9304 TO-3 2N6385 TO-3 TIP33 TO-3P 2N6486 TO-220 TIP539 TO-3 2N6250 TO-3
SPC410 TO-3 RCA410 TO-3 TIP33A TO-3P 2N6487 TO-220 TIP544 TO-3 2N6248 TO-3
TIP338 TIP546 TO-3 2N6469 TO-3
SPC411 TO-3 RCA411 TO-3 TO-3P 2N6488 TO-220
TIP34 TO-3P 2N6489 TO-220. TIP640 TO-3 2N6384 TO-3
SPC413 TO-3 RCA413 TO-3 TIP641 TO-3 2N6385 TO-3
SPC423 TO-3 RCA423 TIP34A TO-3P 2N6490 TO-220
TO-3 TIP642 TO-3 2N6385 TO-3
TIP34B TO-3P 2N6491 TO-220
SPC431 TO-3 RCA431 TO-3 TIP645 TO-3 2N6666 TO-3
STS41 0 TO-3 RCA410 TO-3 TIP41 TO-220 80243 TO-220
RCA41 TO-220 TIP646 TO-3 2N6667 TO-3
STS411 TO-3 RCA411 TO-3 TIP41 TO-220 TIP647 TO-3 2N6668 TO-3
STS413 TO-3 RCA413 TO-3 TIP2955 TO-3P 2N6490 TO-220
STS423 TO-3 TIP41A TO-220 B0243A TO-220
RCA423 TO-3 40878 TO-220
STS431 TO-3 RCA431 TO-3 RCA41A TO-220
TIP41A TO-220 TIP3054 TO-220- RCA3054 TO-220
T1482 TO-39 40311 TO-39
35
TIP3055 TO-3P RCA3055 TO-220 BstB0106C MU22 S2062A TO-220 BstC0326 SC88 2N1849 TO-48
TIP5530 TO-3P 2N6099 TO-220 BstBOl13C MU22 S2062B TO-220 BstC0313S6 SC88 2N1846 TO-48
TS2218 TO-39 2N1613 TO-39 BstB0126C MU22 S20620 TO-220 BstC0326S6 SC88 2N1849 TO-48
TS2219 TO-39 2N1711 TO-39 BstB0133C MU22 S2062E TO-220
BstC0506E TO-66 2N3228 TO-66
TS2904 TO-39 40406 TO-39 BstB0140C MU22 S2062M TO-220
BstC0513E TO-66 2N3228 TO-66
SILICON CONTROLLED BstB0106CS4 MU22 S2062A TO-220 BstC0526ETO'66 2N3525 TO-66
BstB0113CS4 MU22 S2062B TO-220 BstC0533E TO-66
RECTIFIERS BstB0126CS4 MU22 S20620 TO-220
2N4101 TO-66
2N1842 TO-48 2N1842A TO-48 BstC0540E TO-66 2N4101 TO-66
BstB0133CS4 MU22 S2062E TO-220
2N1843 TO-48 2N1843A TO-48 BstB0140CS4 MU22 S2062M TO-220 BstC0546E TO-66 2N4101 TO-66
2N1844 TO-48 2N1844A TO-48 BstC0506F TO-66 2N3228 TO-66
BstB01060 MU22 S2062A TO-220
BstBOl130 MU22 S2062B TO-220
.2N1f146 TO-48 2N1846A TO-48 BstC0526F TO-66 2N3525 TO-66
BstB01260 MU22 S2062D TO-220
2N1847 TO-48 2N1847A TO-48 BstB01330 MU22 S2062E TO-220 BstC0533F TO-66 2N4101 TO-66
2N1848 TO-48 2N1848A TO-48 BstB01400 MU22 S2062M TO-220 BstC0540F TO-66 2N4101 TO-66
BstB0106E MU22 S2062A TO-220
2N1850 TO-48 2N1850A TO-48 BstC0506G TO-66 2N3228 TO-66
BstBOl13E MU22 S2062B TO-220
2N4441 Case 90 S122 F TO-220 BstC0513G TO-66 2N3228 TO-66
BstB0126E MU22 S20620 TO-220
2N4442 Case 90 S122B TO-220 BstB0133E MU22 S2062E TO-220 BstC0526G TO-66 2N3525 TO-66
2N4443 Case 90 S122D TO-220 BstB0140E MU22 S2062M TO-220 BstC0533G TO-66 2N4101 TO-66
2N4444 Case 90 S122M TO-220 BstC0540G TO-66 2N4101 TO-66
BstB0106F MU22 S2062A TO-220
2N6236 TO-126 S2060Y TO-220 BstC0546G TO-66 2N4101 TO-66
BstBOl13F MU22 S2062B TO-220
2N6237 TO-126 S2060F TO-220 BstC0506H TO-66 2N3228 TO-66
BstB0126F MU22 S20620 TO-220
2N6238 TO-126 S2060A TO-220 BstB0133F MU22 S2062E TO-220 BstC0513H TO-66 2N3228 TO-66
2N6239 TO-126 S2060B TO-220 BstB0140F MU22 S2062M TO-220 BstC0526H TO-66 2N3525 TO-66
2N6240 TO-126 S2060D TO-220 BstC0533H TO-66 2N4101 TO-66
BstB0206B MU23 S2061 A TO-220
2N6241 TO-126 S2060M TO-220 BstC0540H TO-66 2N4101 TO-66
BstB0213B MU23 S2061B TO-220
10RC10A TO-48 2N1844A TO-48 BstC0546H TO-66 2N4101 TO-66
BstB0226B MU23 S2061 0 TO-220
10RC10AS24 TO-48 2N3650 TO-48 BstB0233B MU23 S2061E TO-220 BTl02-300R TO-220 S2800C TO-220
10RC20A TO-48 2N1846A TO-48 BstB0206BS4 MU23 S2061 A TO-220 BT102-500R TO-220 S2800E TO-220
10RC20AS24 TO-48 2N3650 TO-48
BstB0213BS4 MU23 S2061B TO-220 BTW30-300 TO-48 2N3657 TO-48
10RC30A TO-48 2N1848A TO-48
BstB0226BS4 MU23 S2061D TO-220 BTW30-400 TO-48 2N3658 TO-48
1oRC30AS24 TO-48 2N3651 TO-48
BstB0233BS4 MU23 S2061E TO-220 BTW30-500 TO-48 S7432M TO-48
10RC40A TO-48 2N1849A TO-48 BstB0206BS5 MU23 S2061 A TO-220 BTW30-600 TO-48 S7432M TO-48
10RC40AS24 TO-48 2N3652 TO-48 BstB0213BS5 MU23 S2061B TO-220 BTW31-300 TO-48 2N3657 TO-48
10RC50A TO-48 2N1850A TO-48
BstB0226BS5 MU23 S2061 0 TO-220 BTW31-400 TO-48 2N3658 TO-48
10RC50AS24 TO-48 S7410M TO-48
10RC60AS24 TO-48 BstB0233BS5 MU23 S2061E TO-220 BTW31-500 TO-48 S7412M TO-48
S7410M TO-48
BstB0206C MU23 S2062A TO-220 BTW31-600 TO-48 S7412M TO-48
16RC10A TO-48 2N683 TO-48 BstB0213C MU23 S2062B TO-220 eTW47-600 TO-48 S6410M stud
16RC10AS24 TO-48 2N3650 TO-48 BstB0233C MU23 S2062E TO-220
TO-48 BTW92-600 TO-48 2N3899 stud
16RC20A 2N685 TO-48
16RC20AS24 TO-48 BstB0240C MU23 S2062M TO-220 BTW92-800 TO-48 S6410N stud
2N3651 TO-48
16RC30A TO-48 2N687 TO-48 BstB0206CS4 MU23 S2062A TO-220 BTX31-100 TO-48 S7310A TO-48
16RC30AS24 TO-48 BstB0213CS4 MU23 S2062B TO-220 BTX31-200 TO-48 S7310B TO-48
2N3652 TO-48
16RC40A BstB0226CS4 MU23 S2062D TO-220 BTX31-400 TO-48 S7310D TO-48
TO-48 2N688 TO-48
16RC40AS24 TO-48 BstB0233CS4 MU23 S2062E TO-220 BTX31-500 TO-48 S7310M TO-48
2N3653 TO-48
16RC50A TO-48 BstB0240CS4 MU23 S2062M TO-220 BTX31-600 TO-48 S7310M TO-48
2N689 TO-48
16RC50AS24 TO-48 BstB0206D MU23 S2062A TO-220 BTX32-100 TO-48 S7310B TO-48
S7410M TO-48
BstB02130 MU23 S2062B TO-220 BTX32-400 TO-48 S7310D TO-48
16RC60A TO:48 2N690 TO-48 BTX32-500 TO-48 S7310M TO-48
BstB0226D MU23 S20620 TO-220
16RC60AS24 TO-48 S7410M TO-48 BTX32-600 TO-48 S7310M TO-48
BstB02330 MU23 S2062E TO-220
BstB0106B MU22 S2061 A TO-220 BTX33-100 TO-48 S6210A TO-48
BstBOl13B MU22 S2061 B TO-220 BstB0240D MU23 S2062M TO-220
BTX33-200 TO-48 S6210B TO-48
BstB0126B MU22 S2061 D TO-220 BstB0206E MU23 S2062A TO-220
BTX33-400 TO-48 S62100 TO-48
BstB0213E MU23 S2062B TO-220
BstB0133B MU22 S2061E TO-220 BTX33-500 TO-48 S6210M TO-48
BstB0226E MU23 S20620 TO-220
BstB0140B MU22 S2061M TO-220 BTX33-600 TO-48 S6210M TO-48
BstB0233E MU23 S2062E TO-220
BstB0106BS4 MU22 S2061 A TO-220 BTX70-100 TO-48 S6210A TO-48
BstBOl13BS4 MU22 S2061B TO-220 BstB0240E MU23 S2062M TO-220 BTX70-200 TO-48 S6210B TO-48
BstB0126BS4 MU22 S2061 0 TO-220 BstB0206F MU23 S2062A TO-220 BTX70-400 TO-48 S62100 TO-48
BstB0213F MU23 S2062B TO-220 BTX70-500 TO-48 S6210M TO-48
BstB0133BS4 MU22 S2061E TO-220
BstB0226F MU23 S20620 TO-220 BTX70-600 TO-48 S6210M TO-48
BstB0106BS5 MU22 S2061 A TO-220
BstB0233F MU23 S2062E TO-220 BTX71-100 TO-48 S7310B TO-48
BstBOl13BS5 MU22 S2061 B TO-220
BstB0126BS5 MU22 S2061 0 TO-220 BstB0240F MU23 S2062M TO-220 BTX71-200 TO-48 S7310B TO-48
BstB0133BS5 MU22 S2061E TO-220 BstC0313 SC88 2N1846 TO-48 BTX71-400 TO-48 S7310D TO-48
36
SILICON CONTROLLED RECTIFIERS (CONT'D)
BTX71-500 TO-48 S7310M TO-48 C33C press-fit 2N3872 press-fit C45F TO-49 TAS8612A stud
BTX71-600 T0-48 S7310M TO-48 C330 press-fit 2N3872 press-fit C45G TO-49 TAS8612B stud
BTX72-100 T0-48 S7310M TO-48 C33F press-fit 2N3870 press-fit C45H TO-49 TAS86120 stud
BTX72-200 T0-48 S7310M TO-48 C33U press-fit 2N3870 press-fit C45M TO-49 TAS8612M stud
BTX72-400 T0-48 S7310M TO-48 C34A2 stud 2N3650 TO-48 C45N TO-49 TAS8612N stud
BTX72-500 TO-48 S7310M TO-48 C34B2 stud 2N3651 TO-48 C45U TO-49 TAS8612A stud
BTX72-600 T0-48 S7310M TO-48 C34C2 stud 2N3652 TO-48 Cl06A TO-202 Cl06A TO-202
BTX73-100 T0-48 2N683 TO-48 C3402 stud 2N3653 TO-48 S106A TO-202
BTX73-200 TO-48 2N685 TO-48 C34E2 stud S7410M TO-48 Cl06B TO-202 Cl06B TO-202
BTX73-400 TO-48 2N688 TO-48 C34F2 stud 2N3650 TO-48 S106B TO-202
BTX73-500 T0-48 2N689 TO-48 C35A TO-48 2N683 TO-48 Cl06C TO-202 Cl06C TO-202
BTX73-600 T0-48 2N690 TO-48 2N3896 stud S106C TO-202
BTX74-100 TO-48 S6210A TO-48 Cl060 TO-202 Cl060 TO-202
BTX74-200 TO-48 S6210B C35B TO-48 2N685 TO-48
TO-48 S1060 TO-202
BTX74-400 TO-48 S62100 2N3897 stud
TO-48 Cl06F TO-202 Cl06F
C35C TO-48 2N687 TO-48 TO-202
BTX74-500 TO-48 S6210M TO-48
2N3898 stud S106F TO-202
BTX74-600 T0-48 S6210M TO-48
C350 TO-48 2N688 TO-48 Cl060 TO-202 Cl060 TO-202
BTY87-400 TO-48 562100 stud
2N3898 stud 51060 TO-202
BTY87-400R TO-482N3898 stud Cl06Y TO-202 Cl06Y
C35E TO-48 2N689 TO-48 TO-202
BTY87-500 TO-48 56210M stud
2N3899 stud 5106Y TO-202
BTY87-500R TO-48 2N3899 stud Cl07A TO-202 Cl07A
C35F TO-48 2N682 TO-48 TO-202
BTY87-600 TO-48 56210M stud
2N3896 stud 5107A TO-202
BTY87-600R TO-482N3899 stud
C35G TO-48 2N684 TO-48 Cl07B TO-202 Cl07B TO-202
BTY87 -800 R TO-48 5641 ON stud
2N3897 stud 5107B TO-202
BTY91-400 TO-48 562100 stud
C35H TO-48 2N686 TO-48 Cl07C TO-202 Cl07C TO-202
BTY91-400R TO-482N3898 stud 5107C TO-202
BTY91-500 TO-48 56210M stud 2N3898 stud
C35M TO-48 2N690 TO-48 Cl070 TO-202 Cl070 TO-202
BTY91-500R TO-48 2N3899 stud
BTY91-600 TO-48 S6210M 2N3899 stud 51070 TO-202
stud
C35U TO-48 2N681 TO-48 Cl07F TO-202 Cl07F TO-202
BTY91-600R TO-482N3899 stud
2N3896 stud 5107F TO-202
BTY91-800 R TO-48 S641 ON stud C1070 TO-202 Cl070 TO-202
C20A stud 56210A stud C36A TO-48 2N1844A TO-48
C368 TO-48 2N1846A TO-48 S1070 TO-202
C20B stud 562108 stud
C36C TO-48 2N1848A TO-48 Cl07Y TO-202 Cl07Y TO-202
C20C stud 56210C stud
C200 stud S62100 stud C360 TO-48 2N1849A TO-48 5107Y TO-202
C36E TO-48 2N1850A TO-48 C122A TO-220 5122A TO-220
C20F stud S6210A stud S2800A TO-220
C20U stud S6210A stud C36F TO-48 2N1843A TO-48
C36G TO-48 2N1845A TO-48 Cl228 TO-220 51228 TO-220
C22A press-fit S6200A press-fit 528008 TO-220
C228 press-fit S62008 press-fit C36H TO-48 2N1847A TO-48
press-fit S6200C press-fit C36U TO-48 2N1842A TO-48 C122C TO-220 S122C TO-220
C22C
C38A TO-48 2N683 TO-48 52800C TO-220
C220 press-fit S62000 press-fit C1220 TO-220 51220 TO-220
C22F press-fit S6200A press-fit C388 TO-48 2N685 TO-48
C38C TO-48 2N687 TO-48 528000 TO-220
C22U press-fit S6200A press-fit C122E TO-220 5122E TO-220
C30A stud 2N3896 stud C380 TO-48 2N688 TO-48
C38E TO-48 2N689 TO-48 52800E TO-220
C308 stud 2N3897 stud
C38F TO-48 2N682 TO-48 C122F TO-220 5122F TO-220
C30C stud 2N3898 stud 52800F
C38G TO-48 2N684 TO-48 TO-220
C300 stud 2N3898 stud C122G TO-220 S122G TO-220
C30P stud 2N3896 stud C38M TO-48 2N686 TO-48
C38U TO-48 2N681 TO-48 52800G TO-220
C30U stud 2N3896 stud C122M TO-220 5122M TO-220
C31A stud stud C40A TO-48 2N3650 TO-48
2N3896 52800M TO-220
C408 TO-48 2N3651 TO-48
C318 stud 2N3897 stud C122Y TO-220 S122A TO-220
C31C stud 2N3898 stud C40C TO-48 2N3652 TO-48
S2800A TO-220
C310 stud 2N3898 stud C400 TO-48 2N3653 TO-48 C137E TO-48 2N3899 stud
C31P stud 2N3896 stud C40E TO-48 57410M TO-48 C137M TO-48 2N3899 stud
C31U stud 2N3896 stud C40F TO-48 2N3650 TO-48 C137N TO-48 56410N stud
C40G TO-48 2N3651 TO-48
C32A press-fit 2N3870 press-fit C1375 TO-48 S6410N stud
press-fit C40H TO-48 2N3652 TO-48 C140A TO-48 2N3650
C328 press-fit 2N3871 TO-48
press-fit C40U TO-48 2N3650 TO-48 C1408 TO-48 2N3651
C32C press-fit 2N3872 TO-48
press-fit C45A TO-49 TAS8612A stud C140C TO-48 2N3652
C320 press-fit 2N3872 TO-48
press-fit C458 TO-49 TA586128 stud C1400 TO-48 2N3653
C32F press-fit 2N3870 TO-48
C45C TO-49 TAS86120 stud
C32U press-fit 2N3870 press-fit C140F TO-48 2N3654 TO-48
press-fit C450 TO-49 TAS86120 stud C141A TO-48 2N3655
C33A press-fit 2N3870 TO-48
press-fit C45E TO-49 TAS8612M stud C1418 TO-48 2N3656
C338 press-fit 2N3871 TO·48
37
.Power Devices Cross-Reference Guide
C141C TO-48 2N3657 TO-48 CS0602604 MU22 5107B TO-202 MCR3000-8 Case 905122M TO-220
C141D TO-48 2N3658 TO-48 CS0604602 MU22 5108D TO-202 MCR3818-1 press-fit 56200A press-fit
C141F TO-48 2N3654 TO-48 CS0604604 M U22 5107D TO-202 MCR3818-3 press-fit 56200A press-fit
C220A stud 56210A stud CS0606602 MU22 5108M TO-202 MCR3818-5 press-fit 56200D press-fit
C220A2 150stud 56220A 150stud C5102603 MU23 5108B TO-202 MCR3818-7 press-fit56200M press-fit
C220B stud 56210B stud C5104603 MU23 5108D TO-202 MCR3835-1 press-fit2N3870 press-fit
C220B2 150stud 56220B 150stud C5106603 MU23 5108E TO-202 MCR3835-2 press-fit2N3870 press-fit
C220C stud 56210C stud C5108603 MU23 5108M TO-202 MCR3835-3 press-fit2N3870 press-fit
C220C2 150stud 56220C 150stud C5302D02 TO-220 52062B TO-220 MCR3835-4 press-fit2N3871 press-fit
C220D stud 56210D stud C5304D02 TO-220 52062D TO-220 MCR3835-5 press-fit2N3872 press-fit
C220D2 150stud56220D 150stud MCR3835-6 press-fit2N3872 press-fit
C5305D02 TO-220 52062E TO-220
C220E stud 56210M 150stud MCR3835-7 press-fit2N3873 press-fit
C5306D02 TO-220 52062M TO-220
EC106A1 TO-202 5106A MCR3835-8 press-fit2N3873 press-fit
C220E2 150stud 56220M 150stud TO-202
. C220F stud 56210A stud EC106Bl TO-202 5106B TO-202 MCR3918-1 stud 56210A stud
C220F2 150stud 56220A 150stud EC106Ml TO-202 5106M TO-202 MCR3518-3 stud 56210A stud
C220U stud 56210A stud MCR3918-5 stud 56210D stud
EC107Al TO-202 5107 A TO-202
C220U2 150stud 56220A 150stud MCR3918-7 stud 56210M stud
EC107B1 TO-202 5107B TO-202
MCR3935-1 stud 2N3896 stud
C222A press-fit 56200A press-fit EC107Ml TO-202 5107M TO-202
C222B press-fit 56200 D press-fit IR140A TO-48 2N3650 TO-48 MCR3936-2 stud 2N3896 stud
C222C press-fit 56200D press-fit IR140B TO-48 2N3651 TO-48 MCR9935-3 stud 2N3896 stud
C222D press-fit 56200 D press-fit MCR3935-4 stud 2N3897 stud
IR140C TO-48 2N3652 TO-48
C222E press-fit 56200M press-fit MCR3935-5 stud 2N3898. stud
IR140D TO-48 2N3653 TO-48
MCR3935-6 stud 2N3898 stud
C222F press-fit 56200A press-fit IR140F TO-48 2N3654 TO-48
C222U press-fit 56200.A,,- press-fit IR141A TO-48 2N3655 TO-48 MCR3935-7 stud 2N3899 stud
C55-2T TO-66 2N3228 TO-66 IR141B TO-48 2N3656 TO-48 MCR3935-8 stud 2N3899 stud
C55-4T TO-66 2N3525 TO-66 NL-C35A TO-48 2N683 TO-48
IR141C TO-48 2N3657 TO-48
C55-5.5T TO-66 2N4101 TO-66 NL-C35B TO-48 2N685 TO-48
IR141D TO-48 2N3658 TO-48
press-fit NL-C35C TO-48 2N687 TO-48
C510-02M press-fit·56200A IR141F TO-48 2N3654 TO-48
C510-02N stud 56210A stud MCR106-1 Case 77 52061Y TO-220 NL-C35D TO-48 2N688 TO-48
C510-05M press-fit 56200A press-fit MCR 106-2 Case 77 52061 F TO-220 NL-C35E TO-48 2N689 TO-48
C510-05N stud 56210A stud NL-C35G TO-48 2N684 TO-48
MCR106-3 Case 77 52061A TO-220
C510-1M press-fit 56200A press-fit NL-C35H TO-48 2N686 TO-48
MCR106-4 Case 77 52061B TO-220
C510-1 N stud 56210A stud NL-C35M TO-48 2N689 TO-48
MCR106-5 Case 77 52061C TO-220
C510-2M press-fit 56200B press-fit MCR106-6 Case 77 52061 D TO-220 NL-C36A TO-48 2N1844A TO-48
C510-2N stud 56210B stud MCR106-7 Case 77 52061 E TO-220 NL-C36B TO-48 2N1846A TO-48
C510-4M press-fit 56200D press-fit NL-C36C TO-48 2N1848A TO-48
MCR106-8 Case 77 52061M TO-220
C510-4N stud 56210D stud NL-C36D TO-48 2N1849A TO-48
MCR107-1 Case 77 52062Y TO-220
C510-6M press-fit 56200M press-fit NL-C36E TO-48 2N1850A TO-48
MCR107-2 Case 77 52062F TO-220
C510-6N stud 56210D stud MCR107-3 Case 77 S2062A TO-220 NL-C36G TO-48 2N1845A TO-48
C520-05M press-fit 56200A press-fit MCR107-4 Case 77 52062B TO-220 NL-C36H TO-48 2N1847A TO-48
C520-05N stud 56210A stud NL-C40A TO-48 2N3650- TO-48
MCR107-5 Case 77 52062C TO-220
C520-1M press-fit 56200A press-fit NL-C40B TO-48 2N3651 TO-48
.MCR107-6 Case 77 52062D TO-220 NL-C40C TO-48 2N3652 TO-48
C520-1N stud S6210A stud MCR107-7 Case 77 52062E TO-220
C520-2M press-fit 56200B press-fit MCR406-1 Case 90 52060Y TO-220 NL-C40D TO-48 2N3654 TO-48
C520-2N stud 56210B stud MCR406-2 Case 90 52060F TO-220 NL-C40E TO-48 57410M TO-48
C520-4M press-fit 56200D press-fit NL-C40G TO-48 2N3651 TO-48
MCR406-3 Case 90 52060A TO-220
C520-4N stud 56210D stud NL-C40H TO-48 2N3652 TO-48
MCR406-4 Case 90 S2060B TO-220
MCR407-1 Case 90 52061Y TO-220 NL570M TO-48 2N690 TO-48
C520-6M press-fit 56200M press-fit
C520-6N stud 56210M stud MCR407-2 Case 90 52061 F TO-220 P508 press-fit 56200A press-fit
C535-02M press-fit 2N3870 press-fit MCR407-3 Case 90 52061 A TO-220 P518 press-fit 56200A press-fit
C535-02N stud 2N3896 stud MCR407-4 Case 90 52061 B TO-220 PS020 press-fit 56200A press-fit
C535-05M press-fit 2N3870 press-fit MCR1718-5 TO-48 2N3653 TO-48 PS28 press-fit 56200B press-fit
MCR1718-6 TO-48 2N3653 TO-48 PS035 press-fit 2N3870 press-fit
C535-05N stud 2N3896 stud
C535-1M press-fit 2N3870 press-fit P538 press-fit 56200 D press-fit
MCR1718-7 TO-48 57410M TO-48
C535-1N stud 2N3896 stud MCR1718-8 TO-48 57410M TO-48 PS48 press-fit 56200D press-fit
C535-2M press-fit 2N3871 press-fit MCR3000-1 Case 90 5122F TO-220 P558 press-fit 56200M press-fit
C535-2N stud 2N3897 stud MCR3000-2 Case 90 5122F TO-220 P568 press-fit S6200M press-fit
CS35-4M press-fit 2N3872 press-fit MCR3000-3 Case 90 5122A TO-220 P5120 press-fit 56200M press,fit
C535-4N stud 2N3898 stud MCR3000-4 Case 90 5122B TO-220 P5135 press-fit 2N3870 press-fit
C535-6M press-fit 2N3873 press-fit MCR3000-5 Case 90 5122C TO-220 P5220 press-fit 56200B press-fit
C535-6N stud 2N3899 stud P5235 press-fit 2N3871 press-fit
MCR3000-6 Case 90 5122D TO-220
CS0602602 MU22 5108B TO-202 P5320 press-fit 56200D press-fit
MCR3000-7 Case 90 5122E TO-220
38
P5335 press-fit 2N3872 press-fit RTU0202 stud 2N3896 stud 54010B 150stud 56220D 150stud
P5420 press-fit 56200D press-fit RTU0205 stud 2N3896 stud 54010G press-fit 56200D press-fit
P5435 press-fit 2N3872 press-fit RTU0210 stud 2N3896 stud 54010H stud 56210D stud
P5520 press-fit 56200M press-fit RTU0220 stud 2N3897 stud 54016B 150stud 56220D 150stud
P5535 press-fit 2N3873 press-fit RTU0230 stud 2N3898 stud 54016G press-fit 56200 D press-fit
P5620 press-fit 56200M press-fit RTU0240 stud 2N3898 stud 54016H stud 56210D stud
P5635 press-fit 2N3873 press-fit RTU0250 stud 56410N stud 54025G press-fit 2N3872 press-fit
RCA106A TO-220AB 52060A TO-220AB RTU0260 stud 56410N stud 54025H stud 2N3898 stud
RCA106B TO-220AB 52060B TO-220AB RTU0602 stud 2N3896 stud 54035G press-fit 2N3872 press-fit
RCA 106D TO-220AB 52060D TO-220AB RTU0605 stud 2N3896 stud 54035H stud 2N3898 stud
RCA 106E TO-220AB 52060E TO-220AB RTU0610 stud 2N3896 stud 56003R52 TO-220 52060M TO-220
RCA 106F TO-220AB 52060F TO-220AB RTU0620 stud 2N3897 stud 56003R53 TO-220 52061 M TO-220
RCA 106Q TO-220AB 52060Q TO-220AB RTU0630 stud 2N3898 stud 56006B 150stud 56220M 150stud
RCA106M TO-220AB 52060M TO-220AB RTU0640 stud 2N3898 stud 56006G press-fit 56200M press-fit
RCA 106Y TO-220AB 52060Y TO-220AB RTU0650 stud 2N3899 stud 56006H stud 56210M stud
RCA107A TO-220AB 52061A TO-220AB RTU0660 stud 2N3899 stud 56008G press-fit 56200 M press-fit
RCA 107B TO-220AB 52061 B TO-220AB RTU0705 stud 2N3896 stud 56008H stud 56210M stud
RCA107C TO-220AB 52061C TO-220AB RTU0710 stud 2N3896 stud 56010B 150stud 56220M 150stud
RCA107D TO-220AB 52061D TO-220AB 56010G press-fit 56200M press-fit
RTU0720 stud 2N3897 stud
RCA 107 E TO-220AB 52061 E TO-220AB 56010H stud 56210M stud
RTU0730 stud 2N3898 stud
RCA107F TO-220AB 52061 F TO-220AB
RTU0740 stud 2N3898 stud 56016B 150stud 56220M 150stud
RCA107Q TO-220AB 52061Q TO-220AB 2N3899 stud
RTU0750 stud 56016G press-fit 56200M press-fit
RCA107M TO-220AB 52061M TO-220AB 2N3899 stud
RTU0760 stud 56016H stud 56210M stud
RCA 107Y TO-220AB 52061 Y TO-220AB
S0525G press-fit 2N3870 press-fit 56025G press-fit 2N3873 press-fit
RCA 108A TO-220-AB 52062A .TO-220AB
51003R52 TO-220 52060A TO-220 56025H stud 2N3899 stud
RCA 108B TO-220AB 52062B TO-220AB
RCA 108C TO-220AB 52062C TO-220AB 51003R53 TO-220 52061 A TO-220 56035G press-fit 2N3873 press-fit
RCA 108D TO-220AB 52062D TO-220AB 51006B 150stud 56220A 150stud 56035H stud 2N3899 stud
RCA 108E TO-220AB 52062E TO-220AB 51006G press-fit 56200A press-fit 58025C TO-3 56410N stud
RCA 108F TO-220AB 52062F TO-220AB 51006H stud 56210A stud 58025D 150stud 56420N 150stud
RCA108Q TO-220AB 52062Q TO-220AB 51008B 150stud 56220A 150stud 58025G press-fit 56400N press-fit
RCA 108M TO-220AB 52062M TO-220AB 51008G press-fit 56200A press-fit 58025H stud 5641 ON stud
RCA 108Y TO-220AB 52062Y TO-220AB 51008H stud 56210A stud 58035G press-fit 56400N press-fit
RTS0202 press-fit 56200A press-fit 51010B 150stud 56220A 150stud SB035H stud 56410N stud
RT50205 press-fit 56200A press-fit 51010G press-fit 56200A press-fit 5P508 stud 56210A stud
RT50210 press-fit 56200A press-fit 51010H stud 56210A stud 5P518 stud 56210A stud
RTS0220 press-fit 56200B press-fit 51016B 150stud S6220A 150stud SPS020 stud S6210A stud
RTS0230 press-fit 56200D press-fit 51016G press-fit S6200A press-fit SPS28 stud S6210B stud
RTS0240 press-fit S6200D press-fit S1016H stud S6210A stud 5P538 stud S6210D stud
RTS0250 press-fit S6200M press-fit 51025G press-fit 2N3870 press-fit SP548 stud S6210D stud
RTS0260 press-fit S6200M press-fit 51025H stud 2N3896 stud 5PS58 stud S6210M stud
RTS0502 press-fit S6200A press-fit S1035G press-fit 2N3870 press-fit 5PS68 stud S6210M stud
RTS0505 press-fit S6200A press-fit S1035H stud 2N3896 stud SPS120 stud S6210A stud
RTS051 0 press-fit S6200A press-fit S2003R52 TO-220 52060B TO-220 5P5220 stud S6210B stud
RT50520 press-fit S6200B press-fit S2003R53 TO-220 S2061 B TO-220 SPS320 stud S6210D stud
RT50530 press-fit S6200D press-fit 52006B 150stud 56220B ISOstud ·5PS420 stud S6210D stud
RTS0540 press-fit S6200 D press-fit S2006G press-fit S6200B press-fit SPS520 stud S6210M stud
RTS0550 press-fit S6200M press-fit 52006H stud 56210B stud SPS620 stud S6210M stud
RTS0602 press-fit S6200A press-fit 52008B ISOstud S6220B ISOstud T A-6-3-1 00 TO-66 S3704A TO-66
RT50605 press-fit S6200A press-fit S2008G press-fit 56200 B press-fit TA6-3-200 TO-66 S3704B TO-66
RT50610 press-fit S6200A press-fit 52008H stud 56210B stud T A6-3-400 TO-66 S3704D TO-66
RTS0620 press-fit S6200B press-fit S2010B ISOstud S6220B ISOstud T A6-3-500 TO-66 S3704E TO-66
RT50630 press-fit S6200D press-fit S2010G press-fit 56200B press-fit T A6-3-600 TO-66 53704M TO-66
RTS0640 press-fit S62000 press-fit 52010H stud 56210B stud T A6-3-700 TO-66 S37045 TO-66
RTS0650 press-fit S6200M press-fit S2016B ISOstud S6220B ISOstud T A6-6-1 00 TO-66 2N3668 TO-66
RTS0660 press-fit S6200M press-fit 52016G press-fit 56200B press-fit T A6-6-400 TO-66 2N3670 TO-66
RTU0102 stud S6210A stud 52016H stud 56210B stud T A6-6-500 TO-66 2N4103 TO-66
RTU0105 stud S6210A stud 52025G press-fit 2N3871 press-fit T A6-6-600 TO-66 2N4103 TO-66
RTUOll0 stud S6210A stud S2025H stud 2N3897 stud TA6-7-100 TO-48 S7310B TO-48
RTU0120 stud S6210B stud S2035G press-fit 2N3871 press-fit TA6-7-200 TO-48 S7310B TO-48
RTU0130 stud S62100 stud S2035H stud 2N3897 stud TA6-7-400 TO-48 S73100 TO-48
RTU0140 stud S62100 stud 54006B ISOstud S62200 ISOstud TA6-7-500 TO-48 S7310M TO-48
RTU0150 stud S6210M stud 54006G press-fit S62000 press-fit TA6-7-600 TO-48 S7310M TO-48
RTU0160 stud S6210M stud 54006H TA6-10-100 TO-48 57310B TO-48
stud S62100 stud
39
TA6·10·200 TO·48 57310B TO·48 40216 TO·48 56493M TO·48 2N6074 Case 77 2N5757 TO·5
TA6·10·400 TO·48 57310D TO·48 40504 TO·66 52710B TO·66 2N6075 Case 77 2N5757 TO·5
TA6·10·500 TO·48 57310M TO·48 40505 TO·66 52710D TO·66 2N6139 stud 2N5569 stud
TA6· 10·600 TO·48 57310M TO·48 40506 TO·66 52710M TO·66 2N6140 stud 2N5570 stud
TA6·15·100 TO·48 56210A TO·48 40553 TO·66 53700B TO·66 2N6141 stud T4111M stud
TA6·15·200 TO·48 56210B TO·48 40554 TO·66 53700D TO·66 2N6142 stud 2N5569 stud
TA6·15-400TO·48 56210D TO·48 40555 TO·66 53700M TO·66 2N6143 stud 2N5570 stud
TA6·15·500 TO·48 56210M TO·48 40654 TO·5 52600B TO·5 2N6144 stud T4111M stud
TA6·15·600 TO·48 56210M TO·48 40655 TO·5 52600D TO·5
2N6145 150stud T4120B 150stud
TA6·20·100 TO·48 56210A TO·48 40656 TO·5 52620B TO·5
~N6146 150stud T4120D 150stud
TA6·20·200 TOA8 56210B TO·48 40657 TO·5 52620D TO·5
40658 52610B 2N6147 150stud T4120M 150stud
TA6·20·400 TO·48 56210D TO·48 TO·5 TO·5
40659 52610D 2N6151 Case 90 T2800B TO·220
TA6·20·500 TO·48 56210M TO·48 TO·5 TO'5
40680 stud 56420A stud 2N6152 Case 90 T2800D TO·220
TA6·20·600 TO·48 56210M TO·48
T A6·35· 100 TO·48 56410A stud 40681 stud 56420B stud 2N6153 Case 90 T2800M TO·220
T A6·35·200 TO·48 56410B stud 40682 150stud 56420D 150stud 2N6154 Case 90 T2802B TO·220
T A6·35·400 TO·48 56410D stud 40683 150stud 56420M 150stud 2N6155 Case 90 T2802D TO·220
T A6·35·500 TO·48 56410M stud 40735 TO·48 57410M TO·48 2N6156 Case 90 T2802M TO·220
T A6·35·600 TO·48 56410M stud 40749 TO·48 56200M TO·48 2N6157 press·fit T6401 B press·fit
40750 press·fit 56200B press·fit 2N6158 press·fit T6401 D press·fit
TIC106A TO·220 52060A TO·220 40751 press·fit 56200D press·fit 2N6159 press·fit T6401 M press·fit
TIC106B TO·220 52060B TO·220 40752 press·fit 56200M press·fit. 2N6160 stud T6411B stud
TIC106C TO·220 52060C TO·220 40753 stud 56210A stud 2N6161 stud T6411D stud
TIC106D TO·220 52060D TO·220 40754 stud 56210B stud 2N6162 stud T6411M stud
TIC106F TO·220 52060F TO·220 40755 stud 56210D stud 2N6163 150stud T6421 B 150stud
TIC106Y TO·220 52060Y TO·220 40756 stud 56210M stud 2N6164 150stud T6421 D 150stud
TIC116A TO·220 5122A TO·220 40757 150stud 56220A 150stud 2N6165 150stud T6421 M 150stud
52800A TO·220 40758 150stud 56220B 150stud 2N6342 TO·220 T2802B TO·220
TIC116B TO·220 5122B TO·220 40759 150stud 56220D 150stud 2N6343 TO·220 T2802D TO·220
52800B TO·220 40760 150stud 56220M 150stud
2N6344 TO·220 T2802M TO· 220
TIC116C TO·220 5122C TO·220 40833 TO·5 52600M TO·5 2N6345 TO·220 T2802N TO·220
TIC116D TO·220 5122D TO·220 40834 TO·5 52620M TO·5
2N6346 TO·220 T2800B TO·220
TIC116E TO·220 5122E TO·220 40835 TO·5 52610M TO·5
2N6347 TO·220 T2800D TO·220
40867 TO·220AB 52800A TO·220AB
TIC116F TO·220 5122F TO·220 2N6348 TO·220 T2800M TO·220
40868 TO·220AB 52800B TO·220AB
TIC116M TO·220 5122M TO·220 2N6349 TO·220 T2800N TO·220
40869 TO·220AB 52800D TO·220AB
TIC126A TO·220 2N6395 TO·2~Q 6T06 TO·66 T2700B TO·66
40888 TO·66 537035F TO·66
TIC126B TO·220 2N6396 TO·220 40889 6T08 TO·66 T4700B TO·66
TO·66 537025 TO·66
TIC126C TO·220 56000G TO·220 6T16 TO·66 T2700B TO·66
TIC126D TO·220 2N6397 TO·220 TRIACS 6T18 TO·66 T4700B TO·66
TIC126E TO·220 56000E TO·220 2N6068 Case 77 T2303F TO·5 6T26 TO·66 T2700B TO·66
TIC126F TO·220 2N6349 TO·220 T2500Q TO·220 6T28 TO·66 T4700B TO·66
TIC126M TO·220 2N6398 TO·220 2N6068A Case 77 T2301 F T0-5 6T36 TO·66 T2700D TO·66
TY504 TO·220 52062A TO·220 2N6068B Case 77 T2300F TO·5 6T38 TO·66 T4700D TO·66
TY1004 TO·220 52062A TO·220 2N6069 Case 77 T2303F TO·5 6T46 TO·66 T2700D TO·66
TY2004 TO·220 52062B TO·220 T2500Y TO·220 6T48 TO·66 T4700D TO·66
TY3004 TO·220 52062C TO·220 2N6069A Case 77 T2301 F TO·5 BRY4,.,00 TO·39 2N5754 TO·39
TY4004 TO·220 52062D TO·220 2N6069B Case 77 T2300F TO·5 BRY41·200 TO·39 2N5755 TO·39
TY5004 TO·220 52062E TO·220 2N6070 Case 77 2N5754 TO·5 BRY41·300 TO·39 2N5756 TO·39
TY6004 TO·220 52062M TO·220 T2500A TO·220 BRY41·400 TO·39 2N5757 TO·39
TY507 TO·220 5122A TO·220 2N6070A Case 77 T2301A TO·5 BRY41·500 TO·39 2N5757 TO·39
TY1007 TO·220 5122A . TO·220 2N6070B Case 77 T2300A TO·5 BRY45·100 TO·39 2N5754 TO·39
TY2007 TO·220 5122B TO·220 2N6071 Case 77 2N5755 TO·5 BRY45·200 TO·39 2N5755 TO·39
TY3007 TO·220 5122C TO·220 T2500B TO·220 BRY45·300 TO·39 2N5756 TO·39
TY4007 TO·220 5122D TO·220 2N6071 A Case 77 T2301 B TO·5 BRY45·400 TO·39 2N5757 TO·39
TY5007 TO·220 5122E TO·220 2N6071B Case 77 T2300B TO·5 BRY45·500 TO·39 2N5757 TO·39
TY6007 TO·220 5122M TO·220 2N6072 Case 77 2N5756 TO·5 BTR0205 TO·66 T2700B TO·66
TY510 TO·220 52800F TO·220 T2500C TO·220 BTR0210 TO·66 T2700B TO·66
TY1010 TO·220 52800A TO·220 2N6072A Case 77 2N5756 TO·5 BTR0220 TO·66 T2700B TO·66
TY2010 TO·220 58200B TO·220 2N6072B Case 77 T2300D TO·5 BTR0230 TO·66 T2700D TO·66
TY3010 TO·220 52800C TO· 220 2N6073 Case 77 2N5756 TO·5 BTR0240 TO·66 T2700D TO·66
TY4010 TO·220 52800D TO·220 T2500D TO·220 BTR0305 TO·66 T2700B TO·66
TY5010 TO·220 52800E TO·220 2N6073A Case 77 T2301 D TO·5 BTR0310 TO·66 T2700B TO·66
TY6010 TO·220 52800M TO·220 2N6073B Case Tl T2300D TO·5 BTR0320 TO·66 T2700B TO·66
40
TRIACS (CONT'D)
BTR0330 TO-66 T2700D TO-66 BTV0405 150stud T4121 B 150stud BTX0550 150stud T4120M 150stud
BTR0340 TO-66 T2700D TO-66 BTV0410 150stud T4121B 150stud BTX0560 150stud T4120M 150stud
BTR0405 TO-66 T4700B TO-66 BTV0420 150stud T4121 B 150stud BTX0605 150stud T6421 B 150stud
BTR0410 TO-66 T4700B TO-66 BTV0430 150stud T4121 D 150stud BTX0610 150stud T6421 B 150stud
BTR0420 TO-66 T4700B TO-66 BTV0440 150stud T4121D 150stud BTX0620 150stud T6421 B 150stud
BTR0430 TO-66 T4700D TO-66 BTV0450 150stud T4121M 150stud BTX0630 150stud T6421 D 150stud
BTR0440 TO-66 T4700D TO-66 BTV0460 150stud T4121 M 150stud BTX0640 150stud T6421 D 150stud
BT50305 press-fit 2N5567 press-fit BTX0650 150stud T6421 M 150stud
BT50310 press-fit 2N5567 press-fit BTW10-100 TO-66 T2700B TO-66
BTX0660 150stud T6421 M 150stud
BT50320 press-fit 2N5567 press-fit BTW10-200 TO-66 T2700B TO-66
HB26 TO-5 2N5755 TO-5
BTW10-300 TO-66 T2700D TO-66
BT50330 press-fit 2N5568 press-fit HB46 TO-5 2N5756 TO-5
BTW10-400 TO-66 T2700D TO-66
BT50340 press-fit 2N5568 press-fit TO-66 H1035C TO-5 T2301 F TO-5
BTW11-100 TO-66 T2700B
BT50350 press-fit T4101M press-fit H10350 TO-5 T2301 A TO-5
BT50360 press-fit T4101M press-fit BTW11-200 TO-66 T2700B TO-66
BTWll-300 TO-66 T27000 TO-66 H1035G TO-5 T2302F TO-5
BT50405 press-fit 2N5567 press-fit H1035H TO-5 T2303F TO-5
BTW11-400 TO-66 T27000 TO-66
BT50410 press-fit 2N5567 press-fit BTW12-100 press-fit 2N5567 press-fit H10355 TO-5 T2300F TO-5
BT50420 press-fit 2N5567 press-fit BTW12-200 press-fit 2N5567 press-fit Hl135C TO-5 T2301 A TO-5
BT50430 press-fit 2N5568 press-fit H1135D TO-5 T2301 A TO-5
BTW12-300 press-fit 2N5568 press-fit
BT50440 press-fit 2N5568 press-fit H1135G TO-5 T2302A TO-5
BT50450 press-fit T4101 M press-fit Hl135H TO-5 2N5754 TO-5
BTW12-500 press-fit T41 01 M press-fit
BT50460 press-fit T 4101 M press-fit H11355 TO-5 T2300A TO-5
BTW13-100 stud 2N5569 stud
BT50505 press-fit 2N5571 press-fit BTW13-200 stud 2N5569 stud H1235C TO-5 T2301B TO-5
BT50510 press-fit 2N5571 press-fit H1235D TO-5 T2301 B TO-5
BT50520 press-fit 2N5571 press-fit BTW13-300 stud 2N5570 stud
2N5570 stud H1235G TO-5 T2302B TO-5
BT50530 press-fit 2N5572 press-fit BTW13-400 stud
T4111 M stud H1235H TO-5 2N5755 TO-5
BTW13-500 stud
BT50540 press-fit 2N5572 press-fit BTW14-100 TO-66 T4700B TO-66 H12355 TO-5 T2300B TO-5
BT50550 press-fit T4100M press-fit TO-66 H1335C TO-5 T2301 D TO-5
BTW14-200 TO-66 T4700B
BT50560 press-fit T4100M press-fit H1335D TO-5 T2301 D TO-5
BT50605 press-fit '2N5441 press-fit BTW14-300 TO-66 T4700D TO-66
BTW14-400 TO-66 T4700D TO-66 H1335G TO-5 T2302D TO-5
BT50610 press-fit 2N5441 press-fit H1335H TO-5 2N5756 TO-5
BT50620 press-fit 2N5441 press-fit press-fit H13355 TO-5 T2300D TO-5
BTW15-200 press-fit 2N5567
BT50630 press-fit 2N5442 press-fit press-fit H1435C TO-5 T2301 D TO-5
BTW15-300 press-fit 2N5568
BT50640 press-fit 2N5442 press-fit H1435D TO-5 T2301 D TO-5
BT50650 press-fit 2N5443 press-fit BTW15-400 press-fit 2N5568 press-fit
BTW15-500 press-fit T4101 M press-fit H1435G TO-5 T2302D TO-5
BT50660 press-fit 2N5443 press-fit H1435H TO-5 2N5756 TO-5
BTW16-100 stud 2N5569 stud
BTU0305 stud 2N5569 stud 2N5569 stud H14355 TO-5 T2300D TO-5
BTW16-200 stud
BTU0310 stud 2N5569 stud stud H1535H TO-5 2N5757 TO-5
BTW16-300 stud 2N5570
BTU0320 stud 2N55(l9 stud H1635H TO-5 2N5757 TO-5
BTU0330 stud 2N5570 stud BTW16-400 stud 2N5570 stud
BTW16-500 stud T4111M stud IT06 TO-220 T2850A TO-220
BTU0340 stud 2N5570 stud IT08 TO-220 T2850A TO-220
BTU0350 stud T4111 M stud IT16 TO-220 T2850A TO-220
BTU0360 stud T4111 M stud BTW18-200 press-fit 2N5571 press-fit IT18 TO-220 T2850A TO-220
BTU0405 stud 2N5569 stud BTW18-300 press-fit 2N5572 press-fit IT26 TO-220 T2850B TO-220
BTU0410 stud 2N5569 stud BTW18-400 press-fit 2N5572 press-fit IT28 TO-220 T2850B TO-220
BTU0420 stud 2N5569 stud BTW18-500 press-fit T41 01 M press-fit IT36 TO-220 T28500 TO-220
BTU0430 stud 2N5570 stud BTW19-100 press-fit 2N5571 press-fit IT38 TO-220 T2850D TO-220
BTU0440 stud 2N5570 stud BTW19-200 press-fit 2N5571 press-fit IT46 TO-220 T2850D TO-220
BTU0450 stud T4111 M stud BTW19-300 press-fit 2N5572 press-fit IT48 TO-220 T2850D TO-220
BTU0460 stud T4111M stud BTW19-400 press-fit 2N5572 press-fit L2001 M3 TO-39 T2300B TO-39
BTU0505 stud 2N5573 stud BTW19-500 press-fit T4101 M press-fit low profile
BTU0510 stud 2N5573 stud BTW20-100 stud T6411B stud L2001 M4 TO-39 T2300B TO-39
BTU0520 stud 2N5573 stud BTW20-200 stud T6411B stud low profile
BTU0530 stud 2N5574 stud BTW20-300 stud T6411 D stud L2001 M5 TO-39 T2301B TO-39
BTU0540 stud 2N5574 stud BTW20-400 stud T6411D stud low profile
BTU0550 stud T4110M stud BTW20-500 stud T6411 M stud L2001 M7 TO-39 T2302B TO-39
BTU0560 stud T4110M stud BTX94-400 stud T6411 D stud low profile
BTU0605 stud T6411B stud BTX94-500 stud T6411 M stud L2001 M9 TO-39 2N5755 TO-5
BTU0610 stud T6411B stud BTX94-600 stud T6411 M stud low profile
BTU0620 stud T6411B stud BTX0505 150stud T4120B 150stud L4001 M3 TO-39 T2300D TO-39
BTU0630 stud T64110 stud BTX0510 150stud T4 120 B 150stud low profile
BTU0640 stud T6411 D stud BTX0520 150stud T4120B 150stud L4001M4 TO-39 T23000 TO-39
BTU0650 stud T6411 M stud BTX0530 150stud T41200 150stud low profile
BTU0660 stud T6411 M stud BTX0540 150stud T41200 150stud
41
TRIACS (CONT'O)
L4001M5 TO-39 T23010 TO-39 MAC-37-7 press-fit T6401 M press-fit PT410 press-fit 2N5568 press-fit
low profile MAC-38-1 stud T6411B stud PT415 press-fit 2N5572 press-fit
L4001 M7 TO-39 T23020 TO-39 MAC-38-2 stud T6411B stud PT425 press-fit T64010 press-fit
low profile MAC-38-3 stud T6411B stud PT430 press-fit T6401 0 press-fit
L4001 M9 TO-39 2N5756 TO-5 MAC-38-4 stud T6411 B stud
PT440 press-fit 2N5442 press-fit
low profile MAC-38-5 stud T64110 stud
PT510 press-fit T41 01 M press-fit
MAC-,., Case 85 2N5567 press-fit MAC-38-6 stud T64110 stud
PT515 press-fit T4100M press-fit
MAC-1-2 Case 85 2N5567 press-fit MAC-38-7 stud T6411 M stud
PT525 press-fit T6401 M press-fit
MAC-1-3 Case 85 2N5567 press-fit MAC92A-l TO-92 T2301F TO-5
MAC-1-4 Case 85 2N5567 press-fit MAC92A-2 TO-92 T2301A TO-5
PT540 press-fit 2N5443 press-fit
MAC-1-5 Case 85 2N5568 press-fit MAC92A-3 TO-92 T2301A TO-5
MAC-1-6 Case 85 2N5568 press-fit MAC92A-4 TO-92 T2301B TO-5 PT615 press-fit T4100M press-fit
MAC-1-7 Case 85 T4101M press-fit MAC92A-5 TO-92 T23010 TO-5 PT625 press-fit T6401 M press-f,it
MAC-1-8 Case 85 T4101M press-fit MAC92A-6 TO-92 T23010 TO-5 PT630 press-fit T6401 M press-fit
MAC-2-1 Case 86 2N5569 stud MAC93A-1 TO-92 T2301 F TO-5
MAC-2-2 02001 MS2 TO-5 T2302B TO-5
Case 86 2N5569 stud MAC93A-2 TO-92 T2301A TO-5 Q2001 M2 TO-5 2N5755 TO-5
MAC-2-3 Case 86 2N5569 stud MAC93A-3 TO-92 T2301 A TO-5 Q2003P TO-5 T2800B TO-5
MAC-5-1 stud 2N5569 stud MAC93A-4 TO-92 T2301 B TO-5 Q2004 ISOstud T4120B ISOstud
MAC-5-2 stud 2N5569 stud MAC94A-l TO-92 T2301 F TO-5 Q2006L4 ISO T2850B ISO
MAC-5-3 stud 2N5569 stud MAC94A-2 TO-92 T2301 A TO-5 TO-220 TO-220
MAC-5-4 stud 2N5569 stud MAC94A-3 TO-92 T2301A TO-5 0200B ISOstud T4121B ISOstud
MAC-5-5 stud 2N5570 stud MAC94A-4 TO-92 T2301B TO-5 Q2010 ISOstud T4121B ISOstud
MAC-5-6 ~tud 2N5570 stud MAC4068B ISOstud T6420B ISOstud Q2015 ISOstud T4120B ISOstud
MAC-5-7 stud T4111 M stud MAC40689 ISOstud T64200 ISOstud 02025 ISOstud T6421 B ISOstud
MAC-5-8 stud T4111M stud MAC40690 ISOstud T6420M ISOstud 02040 ISOstud T6420B ISOstud
MAC-l0-1 Case 90 T2800B TO-220 MAC40797 press-fit T4100M press-fit Q4001 MS2 TO-5 T23020 TO-5
MAC-l0-2 Case 90 T2800B TO-220 MAC40798 stud T4110M stud Q4001 M2 TO-5 2N5756 TO-5
MAC-l0-3 Case 90 T2800B TO-220 PT06 press-fit 2N5567 press-fit Q4003L4 ISO T28500 ISO
MAC-l0-4 Case 90 T2800B TO-220 PT08 press-fit 2N5567 press-fit TO-220 TO-220
MAC-l0-5 Case 90 T2800C TO-220 PT10 press-fit 2N5567 press-fit Q4004 ISOstud T41210 ISOstud
MAC-10-6 Case 90 T28000 TO-220 PT15 press-fit 2N5567 press-fit Q4004L4 ISO T28500 ISO
MAC-l0-7 Case 90 T2800E TO-220 PT16 press-fit 2N5567 press-fit TO-220 TO-220
M'\C-l0-8 Case 90 T2800M TO-220 PT18 press-fit 2N5567 press-fit Q4006 ISOstud T41210 ISOstud
MAC-ll-l Case 90 T2802B TO-220 PT025 press-fit T6401 B press-fit Q4006L4 ISO T28500 ISO
MAC-11-2 Case 90 T2802B TO-220 PT026 press-fit 2N5867 press-fit TO-220 TO-220
MAC-11-3 Case 90 T2802B TO-220 PT028 press-fit 2N6567 press-fit Q4008 ISOstud T41210 ISOstud
MAC-11-4 Case 90 T2802B TO-220 PT030 press-fit T6401 B press-fit Q4010 ISOstud T4121 0 ISOstud
MAC-11-5 Case 90 T2802C TO-220 PT036 press-fit 2N5568 press-fit Q4015 ISOstud T41200 ISOstud
MAC-11-6 Case 90 T28020 TO-220 PT038 press-fit 2N5568 press-fit Q4025 ISOstud T6421 0 ISOstud
MAC-11-7 Case 90 T2802E TO-220 PT040 press-fit 2N5441 press-fit Q4040 ISOstud T64200 ISOstud
MAC-11-8 Case 90 T2802M TO-220 PT046 press-fit 2N5568 press-fit Q5006L4 ISO T28500 ISO
MAC-35-1 press-fit T6401 B press-fit PT048 press-fit 2N5568 press-fit TO-220 TO-220
MAC-35-2 press-fit T6401 B press-fit PT056 press-fit T4101 M press-fit Q5008 ISOstud T4121 M ISOstud
MAC-35-3 press-fit T6401 B press-fit PT058 press-fit T4101M press-fit Q5010 ISOstud T4121M ISOstud
MAC-35-4 press-fit T6401 B press-fit PT066 press-fit T41 01 M press-fit 04015 ISOstud T4120M ISOstud
MAC-35-5 press-fit T64010 press-fit PT068 press-fit T4101 M press-fit Q5025 ISOstud T6421 M ISOstud
MAC-35-6 press-fit T64010 press-fit PT110 press-fit 2N5567 press-fit Q5040 ISOstud T6420M ISOstud
MAC-35-7 press-fit T6401 M press-fit PT115 press-fit 2N5571 press-fit Q6008 ISOstud T4121 M ISOstud
MAC-36-1 stud T6411B stud PT125 press-fit T6401 B press-fit Q6010 ISOstud T4121 M ISOstud
MAC-36-2 T6411B stud PT130 press-fit T6401 B press-fit Q6015 ISOstud T4120M ISOstud
stud
MAC-36-3 stud T6411B stud PT140 press-fit 2N5441 press-fit Q6025 ISOstud T6421 M ISOstud
MAC-36-4 stud T6411B stud PT210 press-fit 2N5567 press-fit Q6040 ISOstud T6420M ISOstud
MAC-36-5 stud T64110 stud PT215 press-fit 2N5571 press-fit Q8025 ISOstud T6420N ISOstud
MAC-36-6 stud T64110 stud PT225 press-fit T6401 B press-fit Q8040 ISOstud T6420N ISOstud
MAC-36-7 stud T6411 M stud PT230 press-fit T6401 B press-fit SC35A stud 2N5569 stud
MAC-37-1 press-fit T6401 B press-fit PT240 press-fit 2N5441 press-fit SC35B stud 2N5569 stud
MAC-37-2 press-fit T6401 B press-fit PT310 press-fit 2N5568 press-fit SC350 stud 2N5570 stud
MAC-37-3 press-f it T6401 B press-fit PT315 press-fit 2N5572 press-fit SC35F stud 2N5569 stud
MAC-37-4 press-fit T6401 B press-fit PT325 press-fit T6401D press-fit SC36A press-fit 2N5567 press-fit
MAC-37-5 press-fit T6401 0 press-fit PT330 press-fit T64010 press-fit SC36B press-fit 2N5567 press-fit
MAC-37-6 press-fit T6401D press-fit PT340 press-fit 2N5442 press-fit SC36D press-fit 2N5568 press-fit
42
TRIACS (CONT'D)
SC36F press-fit 2N5567 press-fit SC61B12 press-fit T6401 B press-fit SC245E stud T4111 M stud
SC40A stud 2N5569 stud SC61B13 press-fit T6401 B press-fit SC245E2 ISOstud T4121 M ISOstud
SC40B stud 2N5569 stud SC61B14 press-fit T6404B press-fit SC245 E12 stud T4111M stud
SC40B2 ISOstud T4121 B ISOstud SC61 0 press-f it T6401 0 press-fit SC245 E13 stud T4111 M stud
SC400 stud 2N5570 stud SC61012 press-fit T64010 press-fit SC245E22 ISOstud T4121M ISOstud
SC4002 ISOstud T41210 ISOstud SC61013 press-fit T64010 press-fit SC245E23 ISOstud T4121 M ISOstud
SC40E stud T4111 M stud SC61014 press-fit T64040 press-fit SC246B press-fit
2N5567 press-fit
SC40E2 ISOstud T4121 M ISOstud SC61E press-fit T6401 M press-fit SC246B12 press-fit
2N5567 press-fit
SC40F stud 2N5569 stud SC61E12 press-fit T6401 M press-fit SC246B13 press-fit
2N5567 press-fit
SC61E13 press-fit T6401 M press-fit SC246B14 press-fit
T4105B press-fit
SC41 A press-fit 2N5567 press-fit
SC41B press-fit 2N5567 SC136A TO-202 2N5754 TO-5 SC2460 press-fit
2N5568 press-fit
press-fit
SC136B TO-202 2N5755 TO-5 SC246012 press-fit
2N5568 press-fit
SC41 0 press-fit 2N5568 press-fit SC246013 press-fit
2N5568 press-fit
SC41 E press-fit T4101M press-fit SC1360 TO-202 2N5756 TO-5
SC141B TO-220 T2800B TO-220 SC246014 press-fit
T41050 press-fit
SC41F press-fit 2N5567 press-fit SC246E press-fit
T41 01 M press-fit
SC1410 TO-220 T28000 TO-220
SC45A stud 2N5569 stud SC141E TO-220 T2800E TO-220 SC246E12 press-fit
T4101M press-fit
SC45B stud 2N5569 stud SC141 M TO-220 T2800M TO-220 SC246E13 ~eu~ij T4101M press-fit
SC45B2 ISOstud T4121 B ISOstud SC250B stud 2N5573 stud
SC450 stud 2N5570 stud SC146B TO-220 T2800B TO-220
SC1460 TO-220 T28000 TO-220 SC250B2 ISOstud T4120B ISOstud
SC4502 ISOstud T4121 0 ISOstud SC250B12 stud 2N5573
SC146E TO-220 T2800E TO-220 stud
SC45E stud T4111 M stud SC250B13 stud
SC146M TO-220 T2800M TO-220 2N5573 stud
SC45E2 ISOstud T4121M ISOstud SC250B14 stud
SC240B stud 2N5569 stud T4113B stud
SC45F stud 2N5569 stud
SC240B2 ISOstud T4121 B ISOstud SC250B22 ISOstud T4120B ISOstud
SC46A press-fit 2N5567 press-f it
SC46B press-fit 2N5567 press-fit SC240B12 stud 2N5569 stud SC2500 stud 2N5574 stud
press-fit 2N5568 press-f it SC240B13 stud 2N5569 stud SC25002 ISOstud T41200 ISOstud
SC460
SC46E press-fit T4101 M press-fit SC240B22 ISOstud T4121 B ISOstud SC250 0 12 stud 2N5574 stud
SC46F press-fit 2N5567 press-fit SC240B23 ISOstud T4121B ISOstud SC250013 stud 2N5574 stud
SC50A stud 2N5573 stud SC2400 stud 2N5570 stud SC250014 stud T41130 stud
SC50B stud 2N5573 stud SC24002 ISOstud T4121D ISOstud SC250022 ISOstud T41200 ISOstud
ISOstud T4120B ISOstud SC240012 stud 2N5570 stud SC250E stud T4110M stud
SC50B2
2N5574 stud SC240013 stud 2N5570 stud SC250E2 ISOstud T4120M ISOstud
SC50D stud
SC5002 ISOstud T41200 ISOstud SC240022 ISOstud T41210 ISOstud SC250 E12 stud T4110M stud
SC50E stud 2N5573 stud SC240023 ISOstud T4121D ISOstud SC250E13 stud T4110M stud
T4110M stud SC240E stud T4111 M stud SC250E22 ISOstud T4120M ISOstud
SC240E2 ISOstud T4121M ISOstud SC251B press-fit 2N5571 press-fit
SC50E2 ISOstud T4120M ISOstud
SC240E 12 stud T4111M stud SC251 B12 press-fit 2N5571 press-fit
SC50F stud 2N5573 stud
SC240E13 stud T4111 M stud SC251 B13 press-fit 2N5571 press-fit
SC51A press-fit 2N5571 press-fit
SC51B press-fit 2N5571 press-fit SC240E22 ISOstud T4121M ISOstud SC251B14 press-fit T4103B press-fit
SC51 0 press-fit 2N5572 press-fit SC240E23 ISOstud T4121M ISOstud SC2510 press-fit 2N5572 press-fit
SC241B press-fit 2N5567 press-fit SC251 012 press-fit 2N5572 press-fit
SC51E press-fit T4100M press-fit SC241 B12 press-fit 2N5567 press-fit
SC51F press-fit 2N5571 press-fit SC251 013 press-fit 2N5572 press-fit
SC241 B13 press-fit 2N5567 press-fit press-fit
SC60B stud T6411 B stud SC251 014 press-fit T41030
SC241 0 press-fit 2N5568 press-fit SC251E press-fit T4100M press-fit
SC60B2 ISOstud T6421 B ISOstud
SC241 D12 press-fit 2N5568 press-fit SC251 E12 press-fit T4100M press-fit
SC60B12 stud T6411B stud press-fit
SC241 013 press-fit 2N5568 SC251 E13 press-fit T4100M press-fit
SC60B13 stud T6411B stud SC241E press-fit T4101M press-fit
SC60B14 stud T6414B stud SPT06 stud 2N5569 stud
SC241E12 press-fit T4101M press-fit SPT08 stud 2N5569 stud
SC60B22 ISOstud T6421 B ISOstud SC241E13 press-fit T4101M press-fit
SC60B23 ISOstud T6421 B ISOstud SPT10 stud 2N5569 stud
SC245B stud 2N5569 stud SPT15 stud 2N5573 stud
SC600 stud T64110 stud SC245B2 ISOstud T4121B ISOstud SPT16 stud 2N5569 stud
SC60D2 ISOstud T6421 0 ISOstud SC245B12 stud 2N5569 stud SPT18 stud 2N5569 stud
SC60D12 stud T64110 stud SC245 B13 stud 2N5569 stud
SC60D13 stud T64110 stud SPT025 stud T6411B stud
SC245 B14 stud T4115B stud SPT030 stud T6411B stud
SC60D14 stud T64140 stud SC245B22 ISOstud T4121B ISOstud
ISOstud SPT26 stud 2N5569 stud
SC60D22 ISOstud T6421 0 SC245B23 ISOstud T4121B ISOstud SPT28 stud 2N5569 stud
SC60D23 ISOstud T6421 0 ISOstud SC2450 stud 2N5570 stud SPT36 stud 2N5570 stud
SC60E stud T6411 M stud SC24502 ISOstud T4121 0 ISOstud SPT38 stud 2N5570 stud
SC60E2 ISOstud T6421 M ISOstud SC245012 stud 2N5570 stud
T6411 M stud SPT40 stud 2N5444 stud
SC60E12 stud SC245013 stud 2N5570 stud
stud SPT46 stud 2N5570 stud
SC60E13 stud T6411 M SC245014 stud T41150 stud SPT48 stud 2N5570 stud
SC60E22 ISOstud T6421 M ISOstud SC245022 ISOstud T41210 ISOstud
ISOstud SPT56 stud T4111M stud
SC60E23 ISOstud T6421 M SC245023 ISOstud T41210 ISOstud
press-fit SPT58 stud T4111 M stud
SC61B press-fit T6401 B
43
TRIACS (CONT'D)
SPT68 stud T4111Mstud TA6-224-400 TO-220 T2802D TO-220 TDAL223B TO-39 T2302D TO-39
SPTll0 stud 2N5569 stud TA6-224-600 TO-220 T2802M TO-220 TDAL 113S TO-39 T2300B TO-39
SPT115 stud 2N5573 stud TA6-225-200 TO-220 T2800B TO-220 TDAL2235 TO-39 T2300D TO-39
SPT125 stud T6411 B stud TA6-225-400 TO-220 T2800D TO-220 T JAL602D stud T8411B stud
SPT130 stud T6411 B stud T A6-225-600 TO-220 T2800M TO-220
TJAL604D stud T8411D stud
SPT140 stud 2N5444 stud TA6-240-200 TO-220 T2850B TO-220
T A6-240-400 TO-220 T2850D TO-220 T JAL606D stud T8411 M stud
SPT21 0 stud 2N5569 stud TRAL 1110D TOA8 2N5569
T A6-241 -200 TO-220 T2850D TO-220 stud
SPT215 stud 2N5573 stud
TA6-245-200 TO-220 T2850B TO-220 TRAL 1115D TO-48 2N5573 stud
SPT225 stud T6411 B stud TA6-245AOO TO-220 T2850D TO-220 TRAL 1125D TO-48 T6411 B stud
SPT230 stud T6411 B stud T A6-246-200 TO-220 T2850B TO-220 TRALl130D ISOstud T6421B ISOstud
SPT240 stud 2N5444 stud TA6-246AOO TO-220 T2850D TO-220 TRAL 1140D ISOstud T6420B ISOstud
SPT310 stud 2N5570 stud TA6-255-200 TO-220 T6000B TO-220 TRAL2210D TOA8 2N5570 stud
SPT315 stud 2N5574 stud T A6-255AOO TO-220 T6000D TO-220 TRAL2215D TO-48 2N5574 stud
SPT325 stud T6411 D stud T A6-255-600 TO-220 T6000M TO-220 TRAL2225D TOA8 T6411 D stud
SPT330 stud T6411 D stud TA6:255A-200 TO-220 T6000B TO-220 TRAL2230D ISOstud T6421 D ISOstud
SPT340 stud 2N5445 stud TA6-255A-200 TO-220 T6000D TO-220 TRAL2240D ISOstud T6420D 'ISOstud
SPT41 0 stud 2N5570 stud TA6-255A-200 TO-220 T6000M TO-220 TX01Al0 TO-66 T2700A TO-66
SPT415 stud 2N5574 stud TA6-260-200 TO-66 T2700B TO-66
TXC01A20 TO-66 T2700B TO-66
SPT425 stud T6411 D stud TA6-260AOO TO-66 T2700D TO-66
TXC01A40 TO-66 T2700D TO-66
SPT430 stud T6411 D stud TA6-261-200 TO-66 T2700B TO-66
TXCOl Bl0 TO-66 T2700A TO-66
SPT440 stud 2N5445 stud TA6-261AOO TO-66 T2700D TO-66
TXCOl B20 TO-66 T2700B TO-66
SPT51 0 stud T4111M stud TA6-265-200 TO-66 T4700B TO-66
TXCOl B40 TO-66 T2700D TO-66
SPT515 stud T4110M stud TA6-265AOO TO-66 T4700D TO-66
TA6-266-200 TO-66 T4700B TO-66 TXC01Cl0 TO-66 T2700A TO-66
SPT525 stud T6411 M stud TXCOl C20 TO-66 T2700B TO-66
TA6-266-400 TO-66 T4700D TO-66
SPT530 stud T6411 M stud TXCOl C40 TO-66 T2700D TO-66
TA6-280-200 TO-220 T6000B TO-220
SPT540 stud 2N5446 stud TXCOl Dl0 TO-66 T2700A TO-66
TA6-280AOO TO-220 T6000D TO-220
SPT610 stud T4111 M stud TXCOl D20 TO-66 T2700B TO-66
TA6-280-600 TO-220 T6000M TO-220
SPT615 stud T4110M stud press-fit TXC01D40 TO-66 T2700D TO-66
TIC20 2N5567 press-fit
SPT625 stud T6411 M stud TIC21 press-fit 2N5568 press-fit TXC01El0 TO-66 T2700A TO-66
SPT630 stud T6411 M stud stud 2N5569 stud TXCOl E20 TO-66 T2700B TO-66
TIC22
SPT640 stud 2N5446 stud stud 2N5570 stud TXCOl E40 TO-66 T2700D TO-66
TIC23
TA6136 TO-202 T2322D TO-202 TIC226B TO-220 T2800B TO-220 TXCOl FlO TO-66 T2700A TO-66
TA6-200-100 TO-39 T2302A TO-39 TO-220 T2800D TO-220 TXCOl F20 TO-66 T2700B TO-66
TIC226D
TA6-201-100 TO-39 T2303A TO-39 TO-220 T2800B TO-220 TXCOl F40 TO-66 T2700D TO-66
TIC236B
T A6-200-200 TO-39 T2302B TO-39
TIC236D TO-220 T2800D TO-220 TXC03Al0 MU22 T2500A TO-220
TA6-201-200 TO-39 T2303B TO-39
TIC250B press-fit T6401 B press-fit TXC03A20 MU22 T2500B TO-220
TA6-200-400 TO-39 T2302D TO-39
TIC250D press-fit T6401 D press-fit TXC03A40 MU22 T2500D TO-220
TA6-202- 100 TO-39 T2302A TO-39
TA6-202A- 100 TO-39 T2302A TO-39 TIC250E press-fit T6401 M press-fit TXC03A50 MU22 T2500E TO-220
TA6-202-200 TO-39 T2302B TO-39 TIC250M press-fit T6401 M press-fit TXC03Bl0 MU22 T2500A TO-220
TA6-202A-200 TO-39 T2302B TO-39 TIC252B stud T6411 B stud TXC03B20 MU22 T2500B TO-220
T A6-202AOO TO-39 T2302D TO-39 TIC252D stud T6411 D stud TXC03B40 MU22 T2500,D TO-220
TA6-202AAOO TO-39 T2302D TO-39 TIC252E stud T6411 M stud TXC03B50 MU22 T2500E TO-220
T A6-203- 100 TO-39 T2301A TO-39 TIC252M stud T6411 M stud TXC03Cl0 MU22 T2500A TO-220
TA6-203A- 100 TO-39 T2301A TO-39 TIC260B press-fit T6401 B press-fit TXC03C20 MU22 T2500B TO-220
TA6-203-200 TO-.39 T2301 B TO-39 TIC260D press-fit T6401 D press-fit TXC03C40 MU22 T2500D TO-220
TA6-203A-200 TO-39 T2301 B TO-39 TIC260E press-fit T6401 M press-fit TXC03C50 MU22 T2500E TO-220
T A6-203-400 TO-39 T23010 TO-39 TIC260M press-fit T6401 M press-fit TXC03Dl0 MU22 T2500A TO-220
T A6-203AAOO TO-39 T23010 TO-39 TIC262B stud T6411 B stud TXC03D20 MU22 T2500B TO-220
TA6-204-100 TO-39 T2300A TO-39 TIC262D stud T6411 D stud TXC03D40 MU22 T2500D TO-220
TA6-204A-l00 TO-39 T2300A TO-39 TIC262E stud T6411 M stud TXC03D50 MU22 T2500E TO-220
TA6-204-200 TO-39 T2300B TO-39 TlC262M stud T6411 M stud TXC03El0 MU22 T2500A TO-220
TA6-204A-200 TO-39 T2300B TO-39 TIC270B press-fit 2N5441 press-fit TXC03E20 MU22 T2500B TO-220
T A6-204AOO TO-39 T2300D TO-39 TIC270D press-fit 2N5442 press-fit TXC03E40 MU22 T2500D TO-220
TA6-204AAOO TO-39 T2300D TO-39 TIC270E press-fit 2N5443 press-fit TXC03E50 MU22 T2500E TO-220
TA6-205-100 TO-39 T2303A TO-39 press-fit
TIC270M 2N5443 press-fit TXC03Fl0 MU22 T2500A TO-220
TA205-200 TO-39 T2303B TO-39 stud
TIC272B 2N5444 stud TXC03F20 MU22 T2500B TO-220
TA6-205-400 TO-39 T2303D TO-39 stud
TIC272D 2N5445 stud TXC03F40 MU22 T2500D TO-220
TA6-206-100 TO-39 T2302A TO-39 stud
TIC272E 2N5446 stud TXC03F50 MU22 T2500E TO-220
T A6-206-200 TO-39 T2302B TO-39 stud
T2302D TO-39 TIC272M 2N5446 stud TXD98A20 stud 2N5573 stud
TA6-206-400 TO-39
T A6-220-200 TO-220 T2500B TO-220 TDALl13A TO-39 2N5754 TO-39 TXD98A40 stud 2N5574 stud
TA6-220-400 TO-220 T2500D TO-220 TDAL223A TO-39 2N5756 TO-39 TX D98A50 stud T4110M stud
TA6-224-200 TO-220 T2800B TO-220 TDALl13B TO-39 T2302B TO-39 TXD99A20 stud 2N5569 stud
44
TRIACS (CONT'D)
TX099A40 stud 2N5570 stud 40663 stud T64110 stua 40771 TO-5 T2305B TO-5
TX099A50 stud T4111M stud 40668 TO-220AB T2800B TO-220AB 40772 TO-5 T23050 TO-5
TXE99A20 stud T6411B stud 40669 TO-220AB T28000 TO-220AB 40775 press-fit T4105B press-fit
TXE99A40 stud T64110 stud 40670 TO-220AB T2800M TO-220AB 40776 press-fit T41050 press-fit
TXE99A50 stud T6411 M stud 40671 press-fit T6401M press-fit 40777 stud T4115B stud
TYAL 113B TO-220 T2500B TO-220 40672 stud T6411M stud 40778 stud T41150 stud
TYAL 113C TO-220 T2500B TO-220 40684 TO-5 T2313A TO-5 40779 press-fit T4104B press-fit
TYAL113M TO-220T2801B TO-220 40685 TO-5 T2313B TO-5 40780 press-fit T41040 press-fit
TYAL 116B TO-220 T2500B TO-220 40686 TO-5 T23130 TO-5 40781 stud T4114B stud
TYAL 116C TO-220 T2500B TO-220 40687 TO-5 T2313M TO-5 40782 stud T41140 stud
40688 ISOstud T6420B ISOstud 40783 press-fit T4103B press-fit
TYAL116M TO-220T2801B TO-220 press-fit T41030 press-fit
40689 ISOstud T64200 ISOstud 40784
TYAL118B TO-220 T2800B TO-220 T4113B stud
40690 ISOstud T6420M ISOstud 40785 stud
TYAL 118C TO-220 T2800B TO-220 T41130 stud
40691 TO-5 T2301B TO-5 40786 stud
TYAL118M TO-220T2802B TO-220 press-fit T6405B press-fit
40692 TO-5 T23010 TO-5 40787
TYAL223B TO-220 T25000 TO-220 press-fit T64050 press-fit
40693 TO-5 T2316A TO-5 40788
TY AL223C TO-220 T25000 TO-220 40694 TO-5 T2316B TO-5 40789 stud T6415B stud
TYAL223M TO-220 T2801 0 TO-220 40695 TO-5 T23160 TO-5 40790 stud T64150 stud
TYAL226B TO-220 T25000 TO-220 40696 TO-5 T2306A TO-5 40791 press-fit T64040 press-fit
TYAL226C TO-220 T25000 TO-220 40697 TO-5 T2306B TO-5 40793 stud T6414B stud
TYAL226M TO-220 T2801 0 TO-220 40698 TO-5 T23060 TO-5 40794 stud T64140 stud
TY AL228B TO-220 T28000 TO-220 40699 press-fit T6406B press-fit 40795 press-fit T4101M press-fit
TYAL228C TO-220 T28000 TO-220 40700 press-fit T64060 press-fit 40796 stud T4111M stud
TY AL228M TO-220 T28020 TO-220 40701 press-fit T6406M press-fit 40797 press-fit T4100M press-fit
TY AL 111 OB TO-220 T2800B TO-220 40702 stud T6416B stud 40798 stud T4110M stud
TYAL 1110C TO-220 T2800B TO-220 40703 stud T64160 stud 40799 ISOstud T4121B ISOstud
TYAL1110M TO-220 T2802B TO-220 40704 stud T6416M stud 40800 ISOstud T41210 ISOstud
TYAL221,OB TO-220 T28000 TO-220 40705 press-fit T6407M press-fit 40801 ISOstud T4121M ISOstud
TYAL2210C TO-220 T28000 TO-220 40706 press-fit T64070 press-fit 40802 ISOstud T4120B ISOstud
TYAL2210M T0-220 T28020 TO-220 40709 press-fit T6407M press-fit 40803 ISOstud T41200 ISOstud
40711 press-fit T4106B press-fit 40804 ISOstud T4120M ISOstud
40429 TO-66 T2700B TO-66 ISOstud T6421B ISOstud
40712 press-fit T41060 press-fit 40805
40430 TO-66 T27000 TO-66 ISOstud T64210 ISOstud
40713 stud T4116B stud 40806
40502 TO-66 T2710B TO-66
40714 stud T41160 stud 40807 ISOstud T6421M ISOstud
40503 TO-66 T27100 TO-66
40715 TO-66 T4706B TO-66 40900 TO-220AB T2850A TO-220AB
40525 TO-5 T2300A TO-5
40716 TO-66 T47060 TO-66 40901 TO-220AB T2850B TO-220AB
40526 TO-5 T2300B TO-5
40717 press-fit T4107B press-fit 40902 TO-220AB T28500 TO-220AB
40527 TO-5 T23000 TO-5
40718 press-fit T41070 press-fit 40927 ISOstud T6420N ISOstud
40528 TO-5 T2302A TO-5
40719 stud T4117B stud 41014 TO-220AB T2500B TO-220AB
40529 TO-5 T2302B TO-5
40720 stud T41170 stud 41015 TO-220AB T25000 TO-220AB
40530 TO-5 T23020 TO-5
40531 TO-5 T2310A TO-5 40721 TO-220AB T2806B TO-220AB
40532 TO-5 T2310B TO-5 40722 TO-220AB T28060 TO-220AB
40533 TO-5 T23100 TO-5 40727 TO-66 T2706B TO-66
40534 TO-5 T2312A TO-5 40728 TO-66 T27060 TO-66
TO-5 40729 TO-66 T2716B TO-66
40535 TO-5 T2312B
T23120 TO-5 40730 TO-66 T27160 TO-66
40536 TO-5
TO-66 40761 TO-5 T2311B TO-5
40575 TO-66 T4700B
TO-66 40762 TO-5 T23110 TO-5
40576 TO-66 T47000
press-fit 40766 TO-5 T2301A TO-5
40660 press-fit T6401 B
40767 TO-5 T2311A TO-5
40661 press-fit T64010 press-fit
40769 TO-5 T2304B TO-5
40662 stud T6411B stud
40770 TO-5 T23040 TO-5
---------------------------------------------------------~
Operating Considerations
Solid state devices are being designed into an increasing Thyristors," and JEDEC Standard RS282 "Standards for
variety of electronic equipment because of their high Silicon Rectifier Diodes and Stacks".
standards of reliability and performance. However. it is The metal shells of some solid state devices operate at the
essential that equipment designers be. mindful of good collector voltage and for some rectifiers and thyristors at the
engineering practices in the use of these devices to achieve anode voltage. Therefore, consideration should be given to
the desired performance. the possibility of shock hazard if the shells are to operate at
This Note summarizes important operating recommen- voltages appreciably above or below ground potential. In
dations and precautions which should be followed in the general. in any application in which devices are operated at
interest of maintaining the high standards of performance of voltages which may be dangerous to personnel, suitable
solid state devices. precautionary measures should be taken to prevent direct
The ratings included in RCA Solid State Devices data contact with these devices.
bulletins are based on the Absolute Maximum Rating Devices should not be connected into or disconnected
System, which is defined by the following Industry Standard from circuits with the power on because high transient
(JEDEC) statement: voltages may cause permanent damage to the devices.
Absolute-Maximum Ratings are limiting values of opera-
ting and environmental conditions applicable to any electron
device of a specified type as defined by its published data. TESTING PRECAUTIONS
and should not be exceeded under the worst probable In common with many electronic components, solid-state
conditions. devices should be operated and tested in circuits which have
The device manufacturer chooses these values to provide reasonable values of current limiting resistance, or other
acceptable serviceability of the device, taking no responsi- forms of effective current overload protection. Failure to
bility for equipment variations, environmental variations, and observe these precautions can cause excessive internal heating
the effects of changes in operating conditions due to of the device resulting in destruction and/or possible
variations in device characteristics. shattering of the enclosure.
The equipment manufacturer should design so that
initially and throughout life n~ absolute-maximum value for TRANSISTORS AND THYRISTORS
the intended service is exceeded with any device under the WITH FLEXIBLE LEADS
worst probable operating conditions with respect to supply- Flexible leads are usually soldered to the circuit elements.
voltage variation, equipment component variation, equip- It is desirable in all soldering ope ratings to provide some
ment control adjustment, load variation, signal variation, slack or an expansion elbow in each lead to prevent
environmental conditions, and variations in device charac- excessive tension on the leads. It is important during the
teristics. soldering operation to avoid excessive heat in order to
It is recommended that equipment manufacturers consult prevent possible damage to the devices. Some of the heat can
RCA whenever device applications involve unusual electrical, be absorbed if the flexible lead of the device is grasped
mechanical or environmental operating conditions. between the case and the soldering point with a pair of pliers.
GENERAL CONSIDERATIONS TRANSISTORS AND THYRISTORS

The design flexibility provided by these devices makes WITH MOUNTING FLANGES
possible their use in a broad range of applications and under The mounting flanges of JEDEC-type packages such as
many different operating conditions. When incorporating the TO-3 or TO-66 often serve as the collector or anode
these devices in equipment, therefore, designers should terminal. In such cases, it is essential that the mounting
anticipate the rare possibility of device failure and make flange be securely fastened to the heat sink, which may be
certain that no safety hazard would result from such an the equipment chassis. Under no circumstances, however,
occurrence. should the mounting flange of a transistor be soldered
The small size of most solid state products provides directly to the heat sink or chassis because the heat of the
obvious advantages to the designers of electronic equipment. soldering operation could permanently damage the device.
However, it should be recognized that these compact devices Soldering is the preferred method for mounting thyristors;
usually provide only relatively small insulation area between see "Rectifiers and Thyristors," bel~w. Devices which cannot
adjacent leads and the metal envelope. When these devices be soldered can be installed in commercially available
are used in moist or contaminated atmospheres, therefore, sockets. Electrical connections may also be made by
supplemental protection must be provided to prevent the soldering directly to the terminal pins. Such connections may
development of electrical conductive patlls across the be soldered to the pins dose to the pin seals provided care is
relatively small insulating surfaces. For specific information taken to conduct excessive heat away from the seals;
on voltage creepage, the user should consult references such otherwise the heat of the soldering operation could crack the
as the JEDEC Standard No. 7 "Suggested Standard on pin seals and damage the device.
46 ______________________________________________________________________
During operation, the mounting-flange temperature is long-nosed pliers may be used. The pliers should hold the
higher than the ambient temperature by an amount which lead firmly between the bending point and the case, but
depends on the heat sink used. The heat sink must have should not touch the case.
sufficient thermal capacity to assure that the heat dissipated When the leads of an in-line plastic package are to be
in the heat sink itself does not raise the device mounting- formed, whether by use of long-nosed pliers or a special
flange temperature above the rated value. The heat sink or bending fixture, the follOWing precautions must be observed
chassis may be connected to either the positive or negative to avoid internal damage to the device:
supply.
In many applications the chassis is connected to the I. Restrain the lead between the bending point and the
voltage-supply terminal. If the recommended mounting plastic case to prevent relative movement between the
hardware shown in the data bulletin for the specific lead and the case.
solid-state device is not available, it is necessary to use either 2. When the bend is made in the plane of the lead
an anodized aluminum insulator having high thermal con- (spreading), bend only the narrow part of the lead.
ductivity or a mica insulator between the mounting-flange 3. When the bend is made in the plane perpendicular to that
and the chassis. If an insulating aluminum washer is required, of the leads, make the bend at least 1/8 inch from the
it should be drilled or punched to provide the two mounting plastic case.
holes for the terminal pins. The burrs should then be 4. Do not use a lead-bend radius of less than 1/16 inch.
removed from the washer and the washer anodized. To insure 5. Avoid repeated bending of leads.
that the anodized insulating layer is not destroyed during
mounting, it is necessary to remove the burrs from the holes The leads of the TO-220AB VERSAWATT in-line
in the chassis. package are not designed to withstand excessive axial pull.
It is also important that an insulating bushing, such as Force in this direction greater than 4 pounds may result in
glass-filled nylon, be used between each mounting bolt and permanent damage to the device. If the mounting arrange-
the chassis to prevent a short circuit. However, the insulating ment tends to impose axial stress on the leads, some method
bushing should not exhibit shrinkage or softening under the of strain relief should be devised.
operating temperatures encountered. Otherwise the thermal
Wire wrapping of the leads is permissible, prOVided that
resistance at the Interface between device and heat sink
the lead is restrained between the plastic case and the point
may increase as a result of decreasing pressure.
of the wrapping. Soldering to the leads is also allowed. The
maximum soldering temperature, however, must not exceed
PLASTIC POWER TRANSISTORS AND THYRISTORS 275 0 C and must be applied for not more than 5 seconds at a
RCA power transistors and thyristors (SCR's and triacs) distance not less than 1/8 inch from the plastic case. When
in molded-silicone-plastic packages are available in a wide wires are used for connections, care should be exercised to
range of power-dissipation ratings and a variety of package assure that movement of the wire does not cause movement
configurations. The following paragraphs provide guidelines of the lead at the lead-to-plastic junctions.
for handling and mounting of these plastic-package devices,
The leads of RCA molded-plastic high-power packages
recommend forming of leads to meet specific mounting
are not designed to be reshaped. However, simple bending of
requirements, and describe various mounting arrangements,
the leads is permitted to change them from a standard
thermal considerations, and cleaning methods. This informa-
vertical to a standard horizontal configuration, or conversely.
tion is intended to augment the data on electrical character-
Bending of the, leads in this manner is restricted to three
istics, safe operating area, and performance capabilities in the
90-degree bends; repeated ben dings should be avoided.
technical bulletin for each type of plastic-package transistor
or thyristor.
Mounting
Lead-Forming Techniques Recommended mounting arrangements and suggested
The leads of the RCA VERSA WAIT in-line plastic hardward for the VERSAWATT package are given in the data
packages can be formed to a custom shape, provided they are bulletins for specific devices and in RCA Application Note
not indiscriminately twisted or bent. Although these leads AN-4142. * When the package is fastened to a heat sink, a
can be formed, they are not flexible in the general sense, nor rectangular washer (RCA Part No. NR231 A) is recommended
are they suffiCiently rigid for unrestrained wire wrapping to minimize distortion of the mounting flange. Excessive
Before an attempt is made to form the leads of an in-line distortion of the flange could cause damage to the package.
package to meet the requirements of a specific application, The washer is particularly important when the size of the
the desired lead configuration should be determined, and a mounting hole exceeds 0.140 inch «(,-32 clearance). Larger
lead-bending fixture should be designed and constructed. The holes are needed to accommodate insulating bushings;
use of a properly designed fixture for this operation however, the holes should not be larger than necessary to
eliminates the need for repeated lead bending. When the use provide hardware clearance and, in any case, should not
of a special bending fixture is not practical, a pair of exceed a diameter of 0.250 inch.
*This Note is included in the Appendix to this DATABOOK.

47
Flange distortion is also possibk ir excessive torque is the power dissipation .be maintained below the level which
used during mounting. A maximum torque or X inch-pollilds would cause the junction temperature to rise above the
is specified. ('arc should be exercised to assure that the tool maximum rating. However, when the device is mounted on a
used to drive the mounting screw never comes in contact heat sink, care must be taken to assure that all portions of
with the plastic body during the driving operation. Such the thermal circuit are considered.
contact can result in damage to the plastic body and internal To assure efficient heat transfer from case to heat sink
device connections. An excellent method or avoiding this when mounting RCA molded-plastic solid state power
problcm is to usc a spacer or combination spacer-isolating devices, the following special precautions should be
bushing which raises the screw heau or nut above the top observed:
surrace or the plastic body. Thc material useu ror such a
spacer or spacer-isolating bushing shoulu_ or course. be I. Mounting torque should be between 4 and 8 inch-
carerully selecteu to avoiu "colu flow" and conscquent pounds.
reuuction in mounting rorce. Slrggesteu materials ror these 2. The mounting holes should be kept as small as possible_
bushings are uiallphtalatc. fiberglass-filleu nylon. or 3. lIoles should be drilled or punched clean with no burrs or
fiberglass-filleu polycarbonate. Unl1l1eu nylon shoulu be ridges, and chamfered to a maximum radius of 0.010
avoideu. inch.
Mouification or the flange can also result in flange 4. The mounting surface should be flat within 0.002
uistortion anu should not be attempted. The package should inch/inch.
not be soldered to the heat sink by use or lead-tin solder 5. Thermal grease (DoW Corning 340 or equivalent) should
because the heat required with this type or solder will cause always be used on both sides of the insulating washer if
the junction temperature or the device to become excessively one is employed. The bleed rate of the thermal-grease
high. compound should be such that it does not exceed 0.5
The TO-220AA plastic package can be mounted in per cent after 24 hours at 200°C.
commercially available TO-66 sockets. such as UID 6. Thin insulating washers should be used. (Thickness of
Electronics Corp. Socket No. PTS-4 or equivalent. For factory-supplied mica washers range from 2 to 4 mils).
testing purposes. the TO-220AB in-line package can be 7. A lock washer or torque washer, made of material having
mounted in a Jetron Socket No. DC74-104 or equivalent. sufficient creep strength, should be used to prevent
Regardless of the mounting method, the following degradation of heat sink efficiency during life.
precautions should be taken:
A wide variety of solvents is available for degreasing and
I. Use appropriate hardware. flux removal. The usual practice is to submerge components
:2. Always fasten the package to the heat sink before the in a solvent bath for a speCified time. However, from a
leads are soldered to fixed terminals. reliability stand point it is extremely important that the
3. Never allow the mounting tool to come in contact with solvent, together with other chemicals in the solder~leaning
the plastic case. system (such as flux and solder covers), do not adversely
4. Never exceed a torque of 8 inch-pounds. affect the life of the component. This consideration applies
5. Avoid oversize mounting holes_ to all non-hermetic and molded-plastic components.
6. Provide strain relief if there is any probability that axial It is, of course, impractical to evaluate the effect on
stress will be applied to the leads. long-term device life of all cleaning solvents, which are
7. Use insulating bushings to prevent hot~reep problems. marketed with numerous additives under a variety of brand
Such bushings should be made of diallphthalate, fiber- names. These solvents can, however, be classified with
glass-filled nylon, or fiberglass-filled polycarbonate. respect to their component parts as either acceptable or
The maximum allowable power dissipation in a solid unacceptable. Chlorinated solvents tend to dissolve the outer
state device is limited by the junction temperature. An package and, therefore, make operation in a humid atmos-
important factor in assuring that the junction temperature phere unreliable. Gasoline and other hydrocarbons cause the
remains below the specified maximum value is the ability of inner encapsulant to swell and damage the transistor. Alcohol
the associated thermal circuit to conduct heat away from the is an acceptable solvent. Examples of specific, acceptable
device. alcohols are isopropanol, methanol, and special denatured
alcohols, such as SDA I, SDA30, SDA34, and SDA44.
When a solid state device is operated in free air, without a Under ~ertain wnditions, dimethyl silicone fluids may
heat sink, the steady-state thermal circuit is defined by the react chemically with the encapsulant of plastic devices and
junction-to-free-air thermal resistance given in the published cause damage to t he package. These fl uids do not cause
data for the device. Thermal considerations require that a damage when they are contained in materials such as thermal
free flow of air around the device is always present and that compounds. These fluids. however. are unacceptable for use
48
as baths or encapsulants for plastic-package devices. In original tarnish·preventive containers and wrappings until
addition. plastic-package devices should not be used or stored rcady for use. Lead solderability is retarded by the presence
in environments that contain significant amounts of dimethyl of silver tarnish; the tarnish can be removed with a silver
silicone fluid. cleaning solution, such as thiourea.
Care must also be used in the selection of fluxes for lead The ceramic bodies of many rf devices contain beryllium
soldering. Rosin or activated rosin fluxes are recommended, oxide as a major ingredient. These portions of the transistors
while organic or acid fluxes are not. Examples of acceptable should not be crushed, ground, or abraded in any way
fluxes are: because the dust created could be hazardous if inhaled.
1. Alpha Reliaros No. 320-33
2. Alpha Reliaros No. 346 Operating
3. Alpha Reliaros No. 711 Forward-Biased Operation. For Class A or AB operation,
4. Alpha Reliafoam No. 807 the allowable quiescent bias point is determined by reference
5. Alpha Reliafoam No. 809 to the infrared safe-area curve in the appropriate data
6. Alpha Reliafoam No. 811-13 bulletin. This curve depicts the safe current/voltage combina-
7. Alpha Reliafoam No. 815-35 tions for extended continuous operation.
8. Kester No. 44 Load VSWR. Excessive collector load or tuning mismatch
If the completed assembly is to be encapsulated, the can cause device destruction by over-dissipation or secondary
effect on the molded-plastic transistor must be studied from breakdown. Mismatch capability is generally included on the
both a chemical and a physical standpoint. data bulletins for the more recent rf transistors.
See RCA RF Power Transitor Manual, Technical Series
RMF-430, pp 39-41, for additional information concerning
RECTIFIERS AND THYRISTORS
the handling and mounting of rf power transistors.
A surge-limiting impedance should always be used in
series with silicon rectifiers and thyristors. The impedance
value must be sufficient to limit the surge current to the SOLID STATE CHIPS
value specified under the maximum ratings. This impedance Solid state chips, unlike packaged devices, are non-
may be provided by the power transformer winding, or by an hermetic devices, normally fragile and small in physical size,
external resistor or choke. and therefore, require special handling considerations as
follows:
A very efficient method for mounting thyristors utilizing
the "modified TO·5" package is to provide intimate contact 1. Chips must be stored under proper conditions to insure
between the heat sink and at least one half of th.e base of the that they are not subjected to a moist and/or contam-
device opposite the leads. This package can be mounted to inated atmosphere that could alter their electrical,
the heat sink mechanically with glue or an expoxy adhesive. physical, or mechanical characteristics. After the shipping
or by soldering, the most efficient method. container is opened, the chip must be stored under the
The use of a "self·jigging" arrangement and a solder following conditions:
preform is recommended. If each unit is soldered individ· A. Storage temperature, 40 0 C max.
ually, the heat source should be held on the heat sink and the B. Relative humidity, 50% max.
solder on the unit. Heat should be applied only long enough C. Clean, dust-free environment.
to permit solder to flow freely. For more detailed thyristor 2. The user must exercise proper care when handling chips
mounting considerations, refer to Application Note AN3822, to prevent even the slightest physical damage to the chip.
"Thermal Considerations in Mounting of RCA Thyristors".
3. During mounting and lead bonding of chips the user must
use proper assembly techniques to obtain proper elec-
RF POWER TRANSISTORS
trical, thermal, and mechanical performance.
Mounting and Handling
Stripline rf devices should be mounted so that the leads 4. After the chip has been mounted and bonded, any
are not bent or pulled away from the stud (heat sink) side of necessary procedure must be followed by the user to
the device. When leads are formed, they should be supported insure that these non-hermetic chips are not subjected to
to avoid transmitting the bending or cutting stress to the moist or contaminated atmosphere which might cause
ceramic portion of the device. Excessive stresses may destroy the development of electrical conductive paths across the
the hermeticity of the package without displaying visible relatively small insulating surfaces. In addition, proper
damage. consideration must be given to the protection of these
Devices employing silver leads are susceptible to devices from other harmful environments which could
tarnishing: these parts should not be removed from the conceivably adversely affect their proper performance.
49
Terms and Symbols
General Cib common-base input capaci- IC continuous collector current
tance ICBO collector-cutoff current,
AQL acceptance quality level
Cob common-base output capaci- emitter open
CM cross modulation
tance ICEO collector-cutoff current,
IMD intermodulation distortion
Cobo open-circuit common-base base open
K post-radiation neutron-
output capacitance ICER collector-cutoff current with
damage constant
ES/b reverse-bias second-break- specified resistance between
LTPD lot tolerance per cent
down energy base and e)l1itter
defective
fab base (alpha) cutoff frequency ICES collector-cutoff current with
MTBF mean time between failures
fae emitter (beta) cutoff base-emitter junction short-
MTTF mean time to failure
frequency circuited
NF noise factor (or noise figure)
hFE dc forward-current transfer ICEV collector-cutoff current with
PD device dissipation
ratio specified voltage between
pps pulses per second
Prr pulse repetition rate hfe common-emitter, small- base and emitter
prt pulse recurrence time signal, short-circuit, forward- ICEX collector-cutoff current with
PW pulse width current transfer ratio specified circuit between
RMS root mean square Ihfel magnitude of common- base and emitter
thermal resistance, junction- emitter, small-signal, short- ICM peak collector current
ROJA
to-ambient circuit, forward-current IC(sat) collector current at which hFE'
thermal resistance, junction- transfer ratio VBE(satl. VCE(sat), and
ROJC
to-case fhfe common-emitter, small- switch ing speeds are measured
thermal resistance, junction- signal, short-circuit forward- IE continuous emitter current
ROJF
to-flange current transfer ratio cutoff emitter-cutoff current, collec-
lEBO
frequency tor open
ROJFA thermal resistance,
fT gain-bandwidth product IEM peak emitter current
junction-to-free air
(unity-gain frequency for ISlb forward-bias, second-break-
ReJHS thermal resistance, junction-
devices in which gain roll off down collector current
to-heat sink
has a -1 slope) PG power gain
TA ambient temperature Gc conversion gain
TC case temperature PRT power rating test
Gpb small-signal, common-base
THD total harmonic distortion PT transistor dissipation at
power gain
TJ operating (junction) tempera- specified temperature
GpB large-signal, common-.base
ture power gain rbb' base spreading resistance
TL lead temperature during Gpe small-signal, common-emitter RBB base bias resistor
soldering power gain
pulse duration rb'C c collector-to-base time constant
tp GpE large-signal, common-emitter
T stg storage temperature RBE external base-to-emitter
power gain resistance
T/ efficiency wide-band voltage gain
GVE RC collector resistor
0 conduction angle common-base, small-signal,
hib rCE (sat) dc collector-to-emitter
¢ phase angle short-circuit input im-
¢L lead radius (for bending) saturation resistance
pedance
T torque Re(hie) real part of common-emitter,
hie common-emitter, small-signal,
small-signal, short-circuit in-
Ts device stud torque short-circuit input im-
put impedance
pedance
Rs collector-to-emitter saturation
hob common-base, small-signal, resistance
open circuit output clamped turn-off switching
Power Transistors tc
admittance
time of an inductive load
(C) collector-to-base charge- hrb common-base, small-signal,
td delay time
generation constant (during open-ci rcuit reverse-voltage
tf fall time
gamma exposure) transfer ratio
tOFF turn-off time (storage time+
IB continuous base current
Cb'c feedback capacitance fall time)
IBEV base-cutoff current with turn-on time (delay time +
Cc collector-to-case tON
specified voltage between rise time)
capacitance
collector and emitter tr rise time
Ccb collector-to-base feedback
capacitance IBM peak base current ts storage time
50
Terms and Symbols
Power Transistors (Cont'd) VEBO emitter-to-base voltage, IFSM peak surge (nonrepetitive)
TVI clamped inductive collector open forward current
turn-off ti me VF diode forward-voltage drop 10 average forward current, 180-
VBB base supply voltage VRT collector-to-emitter reach- degree conduction angle,
VBE base-to-emitter voltage through (or punch through) half-sine wave
VBE(sat) base-to-emitter saturation voltage IR reverse current
voltage a common-base current gain IR(AV) average dynamic reverse
V (B R)CBO collector-to-base breakdown (alpha) current, single-phase, full-
Voltage, emitter open (J collector-emitter current cycle
V (B R)CEO collector-to-emitter break- gain (beta) IRM maximum (peak) .reverse
down voltage, base open TIC collector efficiency current
V(BR)CEV collector-to-emitter break- 71 thermal time constant Irr reverse recovery current
down voltage with specified 12 t amperes squared-seconds
voltage between base and (fusing current for rectifier
emitter Power Hybrid Operational Amplifiers protection)
V (BR)CEX collector-to-emitter A voltage gain PF forward power dissipation
breakdown voltage ACL closed-loop voltage gain PF(AV) average forward power
with specified circuit AOL open-loop voltage gain dissipation
between base and emitter CMRR common-mode rejection ratio PFM maximum (peak) forward
V(BR)EBO emitter-to-base breakdown fH closed-loop bandwidth power dissipation
voltage, collector open Ii idling current PR reverse power dissipation
collector-to-base voltage liB input bias current Rs surge-limiting resistance
VCB
collector-to-base voltage, 110 input offset current trr reverse recovery time
VCBO
em itter open 10 quiescent current VF forward voltage drop
collector supply voltage 10m maximum peak quiescent vF instantaneous forward voltage
VCC
collector-to-emitter voltage current drop
VCE
collector-to-emitter voltage, IS short-circuit current VR reverse (dc blocking) voltage
VCEO
base open PT total power dissipation for VR(RMS) RMS reverse voltage
VCE(sat) collector-to-emitter satura- each output transistor VRRM repetitive peak reverse voltage
tion voltage Rem common-mode input im- VRSM '1onrepetitive peak reverse
VCEO(sus) collector-to-emitter sustaining pedance voltage
voltage, base open SIN signal-to-noise ratio
VRWM working peak reverse voltage
SR slew rate
VCER collector-to-em itter voltage
VICR common-mode input voltage
with specified resistance
range Thyristors
between base and emitter
VIN input signal voltage swing (Triacs, SCR's, GTO's, and ITR's)
VCER(sus) collector-to-emitter sustaining
Via input offset voltage and Diacs
voltage with specified resis-
Voffset offset voltage
tan ce between base and dildt rate of change of on-state
VOUT output voltage swing
emitter current
collector-to-emitter voltage VOUrNlN voltage gain diF/dt rate of change of forward
VCES supply-voltage ripple
with base-emitter junction VRR current (rectifier unit of ITR)
rejection ratio
short-circuited dv/dt critical rate of rise of off-
Vs supply voltage
VCEV collector-to-emitter voltage state voltage
ZIN input impedance
with specified voltage between I(BO) peak break over current
"'Ii idling-current drift
base and emitter iO instantaneous off-state
VCEV(sus) collector-to-emitter sustaining current
voltage with specified voltage iDa instantaneous off-state
between base and emitter Silicon Rectifiers
current, gate open
VCEX collector-to-emitter voltage IF forward current 100M maximum (peak) off-state
with specified circuit between IF(AV) average forward current current, gate open
base and emitter IF(RMS) rms forward current IOROM maximum peak (repetitive)
VCEX(sus) collector-to-emitter sustaining IFM maximum (peak) forward off-state current, gate open
voltage with specified circuit current IORX dc off-state current, specified
between base and emitter IFRM repetitive peak forward ci rcu it between gate and
VEB emitter-to-base voltage current cathode
51
Terms and Symbols
Thyristors ITM maximum (peak) on-state instantaneous off-state vol-
vOX
(Triacs, SCR's, GTO's; and ITR's current tage, specified circuit be-
and Diacs) (Cont'd) ITM(pulse) maximum (peak) pulse tween gate and cathode
on-state current VOX dc off-state voltage, specified
IT(RMS) rms on-state current circuit between gate and
IORXM maximum (peak) repetitive dc. ITRXM maximum (peak) (repetitive) cathode
off-state current with speci- on-state current, specified instantaneous forward voltage
vF
fied circuit between gate and operating circuit drop
cathode ITSM maximum (peak) surge (non- maximum (peak) forward
VFM
IOXM maximum (peak) off-state repetitive) on-state current voltage
current, specified circuit ITXM maximum (peak) on-state cur- dc gate voltage
VG
between gate and cathode rent, specified operating circuit dc gate-to-cathode voltage
VGK
iF instantaneous forward current Po device dissipation gate turn-off voltage
Vgq
IFM peak forward current PO(AV) average device dissipation VGR dc reverse gate voltage
IFRM peak repetitive forward current average gate power dissipation
PG(AV) VGR(BR) reverse gate breakdown
IFSM peak surge forward current maximum (peak) gate power
PGM voltage
(nonrepetitive) dissipation
VGRM maximum (peak) gate reverse
IG dc gate current maximum (peak) reverse gate
PGRM voltage
Ig pulsed gate trigger current power
VGRRM Maximum (peak) repetitive
(gate drive current) on-state power dissipation
PT reverse gate voltage
IggM maximum gate turn-off average on-state power
PT(AV) VGT dc gate trigger voltage
current dissipation
VR d c reverse vo Itage
IGM maximum (peak) gate current
td delay time VRROM maximum (peak) (repetitive)
IGR(BR) reverse gat!! breakdown
tf fall time reverse voltage, gate open
current
tgq gate controlled turn-off time VRRXM maximum (peak) (repetitive)
IGRRM maximum (peak) reverse gate
(ts + tf) voltage, specified circuit
current
tg(rec) gate recovery time between gate and cathode
IGT dc gate trigger current
tgt gate controlled turn-on time VRSOM maximum (peak) (nonrepeti-
iHO instantaneous holding current,
(td + t r ) tive)reverse voltage, gate open
gate open
tq circuit com mutated turn-off VRSXM maximum (peak) (nonrepeti-
IHO dc holding current, gate open
time Itrr + tg(rec») tive) reverse Voltage, specified
iL instantaneous latching current rise time
tr circuit between gate and
IL dc latching current trr reverse recovery ti me cathode
10 average dc forward current storage time
ts VRX dc reverse voltage, specified
IR dc reverse current
V(BO) breakover voltagE' circuit between gate and
iR instantaneous reverse current
I-+V(BO)I-/-V(BO)I cathode
iRO instantaneous reverse current,
break over voltage symmetry VRXM maximum (peak) reverse
gate open
(for diacs) voltage, specified circuit
IRM maximum (peak) reverse
instantaneous breakover between gate and cathode
current V(BO)O
voltage, gate open vT instantaneous on-state voltage
IRROM maximum (peak) reverse dc on-state voltage
Vo dc off-state voltage VT
current, gate open initial on-state voltage
vo instantaneous off-state voltage vT(I)
IRRX dc reverse current, specified maximum (peak) dc on-state
VOM maximum (peak) dc off- VTM
circuit between gate and voltage
state voltage
cathode gate source impedance
VOROM maximum (peak) (repetitive) ZGS
IRRXM maximum (peak) reverse 6V± dynamic breakback voltage
off-state voltage, gate open
current, specified circuit
VORXM maximum (peak) (repetitive)
between gate and cathode
12 t amperes squared-seconds off-state Voltage, specified cir-
.(fusing current for device cuit between gate and cathode
protect·ion) VOSOM maximum (peak) (nonrepeti-
instantaneous on-state current tive) off-state voltage, gate
iT
dc on-state current open
IT
maximum (peak)· on-state cur- VOSXM maximum (peak) (nonrepeti-
ITGQM
rent gate-turn-off capability tive) off-state voltage, speci-
average on-state current fied circuit between gate
·IT(AV)
and cathode
52
Power Transistors
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 53
POWER TRANSISTORS
2N'697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405, 2N3053,2N3053A, 40366,40389,40392,41502
Low-Power Silicon N-P-N Planar Transistors
For Small-Signal Applications In Industrial and Commercial Equipment
Features:
These RCA types are silicon n-p-n planar RCA-2N2102 is a direct replacement for • Planar construction for low noise and
transistors intended for a variety of small- the 2N1613. RCA-2N2405 is a direct low leakage
signal and medium-power applications. replacement for the 2N1893. All of these • Low output capacitance
They feature exceptionally high collector- devices are supplied in the JEDEC TO-39 • Low saturation voltages
to-emitter sustaining voltage, low leakage hermet ic package.
Additional Features for 40366:
characteristics, high switching speeds,
TERMINAL DESIGNATIONS • High reliability assured by five pre-
and high pulse beta (hFEl.
conditioning steps
• Group A test data included in data
sheet.
92CS-27512
JEDEC TO-39
2N3053
2N2102 2N1613 40389
Maximum Ratings, Absolute-Maximum Values: 2N6972N699 40366 2N1711 2N1893 2N2270 2N2405 40392 2N3053A 41502
• COLLECTOR·TO·BASE VOLTAGE. VCBO 60 120 120 75 120 60 120 60 80 V

COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE:
With external base-to-emitter resistance (R BE) ~ 10 n VCER('u,) 80 80 50 100 60 140 50 70 V
With base-emitter junction reverse-biased VCEV(sus) 120 120 60 80 V
· With base open

• EMITTER·TO·BASE VOLTAGE.
VCEOlsus)
VEBO
65 80 45 90 40
5
60 30
4
V
V
• COLLECTOR CURRENT. IC 0.5 0.5 0.7 0.7 A
• TRANSISTOR DISSIPATION: PT
At case temperatures up to 25°C. 5 5- 5 W
At free-air temperatures up to 25°C 0.6 0.6 0.8 0.8 1· 0.8 W
At temperatures above 25°C Derate linearly to maximum temperature
• TEMPERATURE RANGE:
Storage. -65 to +175 ~65 to 200 DC
T stg
DC
Operating (Junction) . Te -65 to +175 ·-65 to 200
* LEAD TEMPERATURE !During solceringl:
At distance from seating plane for 10 s max.
230 230 235 235 300 DC
;;'1/16in.I1.58mm) . TL 255 300 300 255 255
* 2N-Series types in accordance with JEDEC registration data

.7 for 40392. .3.5 for 40389
...t CQLLECTOR-TO-EMITTER VOLTAGE !VCE1*IOY

1
eot.NON-EMITTER c~cm. BASE INPUT.
CClU..ECTOR-TO-EMITTER VOLTS (Vce}.IO
1
g' 0 220
Ii 1 ~,
I~ (-w:f ,
1"0 .. ~€
• Ir....)
~
[\\ ~
I!= 1'40
~,.'.. 1.,('
;:
'00
~ 120 I- ~v
~~
i ~, E-i~~.' ..
.-
~
~
I '0
lao
40• P' j..-

~
""K."
8 n
OD' , 50 ,bo '68 2
~ r
Q'
'"
COlLECTOR CURRENT (Icl- iliA
0.01 0.1 I
COLLECTOR MILLIAMF'ERES lIcl
10 I 10
COLLECTOR MILLIAMPERES IICI
100
Fig. 1 - Typical dc beta characteristics Fig. 2 - Typical dc beta characteristics Fig. 3 - Typical dc beta characteristics
for 2N699, 2N1613, 2N2102, for 2NI711. for 2N1893, 2N2405.
2N2270, 41502.
54
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102 ,2N2270,

2N2405, 2N3053,2N3053A, 40366,40389,40392,41502
ELECTRICAL CHARACTERISTICS, A t Case Temperature (TC) = 25"C unle.. otherwise specified
TEST CONDITIONS LIMITS

CHARACTE RISTIC SYMBOL VOLTAGE CURRENT 2N2102
V de mA de 2N697 2N 99 2N1613 40366 2N1711 UNITS
VCB VCE IC 18 MIN. TYP. MAX. MIN. MAX. r,nIN. MAX. MIN. MAX. MIN. MAX .
.. Collector Cutoff Current: 30 0.0'
~W~lt~h~.~m~it~t.~r~op~.~n________~ICBO ~~6~04-__-+__~__-4~~~~~-+-=-4~0'~~~~~1~0~.0~'-1~--f~~. '0~02~~-1~0~,O~'~~
AtTC' 150"C 60 10 10
.. Emitter Cutoff Current:
VEe' 5 V 0.05 0.01 - ~.002 - p.006 ~
10 0.01 10 20
10 0,1 20 20 35
* DC Forward-Current Transfer Ratio hFE 10 '0' 35 35 76
10 1508 40 ,20 40 ,20 40 ,20 40 '20 100 300
10 500" 20 25 40
10 108 20 20 36
ollector-to-Emitter
Reachthrough Voltage: 120 75 V
VEB = 1,5 V. IE· a
ollector-to-Base
Breakdown Voltage: VIBRlceo 0.' 60 75 120 75 120 76 V
With emitter open
.. Emitter·ta-Base
Breakdown Voltage: VIBRIEBO 7.5 V
le=O.' rnA
.. Collector-ta-Emitter
Sustaining Voltage: VCEO(SUS) 100' 65 V
With base open
With external base-ta-emitter
resistance (RBE) '" 10 n VCER(SUS) 100' 40 60 80 50 80 50 V
.. Base-ta-Emitter Saturation
Voltage 1508 15 1.3 1.3 1.3 1.1 1.3 V
.. Collector-ta-Emitter Saturation
Voltage VCE(satl 150" 15 0.7 1.5 1.5 0.5 1.5 V
• Common·Emitter, Small·Signal,
5 35 100 30 100 30 100 50 200
Forward·Current Transfer Aatio
hfe 10 45 35 150 35 150 70 300
If = 1 kHzl
Magnitude of Common·Emitter,
Small-Signal, Forward Current Ihfel '0 50 2.5 2.5 3.5
Transfer Ratio (f '" 20 MHzl
.. t nput Aesistance: 20 30. 24 34 24 34 24 34
f'" 1 kHz 10 10 8
* Small·Signal Reverse Voltage 3xl0·4 - 3xl0·4 - 3xl0-4 - 5xl0·4
Transfer {Feedback) Ratio: 10 3x 10.4 -
f'" 1 kHz 10 3 x 10-4 - 3x10-4 - 5x10-4
.. Output Conductance: . 0.05 0.5 0.05 0,5 0.01 0.5 0.05 0.5
hob I1mho
f = 1 kHz 10 0,05 0.5 0.01 1 0.05 0.5
• Output Capacitance:
IE = 0
Cob 10 20 35 20 25 '5 25 pF
• Input Capacitance:
80 80 80 pF
VEB = 0.5 V
Gain·Bandwidth Product 50 100 50 60 60 70 MHz
• Noise Figure:
Circuit Bandwidth (BWI '= 1 Hz
Aeference signal ireq. = 1 kHz
Generator resistance (AG) '" NF 10 0.3 dB
510 n 12N1613. 2N1711 I '2
1 Kn (2N2'021
• Saturated Switching Time 30 30
Thermal Resistance:
~J~un~c~ti~on~.t~o~~~'H=-________~R~~C'-__~__ -+____~__- r__- r__1-__-r_7~5-+__~r-7~5~·-r__~5~8~.3~·+-__+-~3~5~·+-__~5~8~.3~" cC/W
Junction-to-ambient A(JJA 250 250· 219* 175* 219*
*2N·Series types in accordance with JEDEC registration data

a Pulsed, pulse duration = 300 1Js, dutY factor'" 2% (1.8% for 2N2102 onlyl.
55
POWERTRANSISTORS ______________________________________________________________________________
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405, 2N3053,2N3053A, 40366,40389,40392,41502
ELECTRICAL CHARACTERISTICS, At Csse Tempersture (Tci = 25'C unless otherwise specified.

2N3053
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N1893 2N2405 2N2270 40389 2N3063A 41502 UNITS
Vde mAde 40392
VCB VeE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. "'AX. MIN. MAX
* Collector Cutoff Current: 15
With emitter open ICBO 30 0.25
60 0.05
90 0.01 0.01
60 50
90 15 10
* Emitter Cutoff Current:
lEBO 0.01 0.01 0.1 0.25 0.25
VEB • 5 V .14 V for 2N3053.
2N3053A)
10 0.1 20
10 30
* DC Forward·Current Transfer Ratio hF E 10 108 35 35
10 1508 40 120 60 200 50 200 50 250 50 250 20
10 10' 20 20
* Collector-to-Base
Breakdown Voltage: VIBR)CBO 0.1 120 120 60 60 80 v
With emitter open
• Emitter-to-Base
Breakdown Voltage: VIBR)EBO V
Ie ::0,1 rnA
• Collector-ta-Emitter
Sustaining Voltage: VCEO(SUS) 100' 90 45 40
With base open 30' 80 90 30 V
0.1 8 o 60
resistance (Rae) = 10[2 VeER(SUS} 100' 100 140 60 50 70 V
=500n 100' 120
• Base-ta-Emitter Saturation 150' 15 1.3 1.1 0.9 1.4 0.6 V
VBE(sat)
Voltage 50' 0.9 0.9
• Collector-ta-Emitter Saturation 150' 15 0.5 1.2 1.7 0.3 1.5
V
Voltage 50' 1.3 0.2
2.5 160 1.7
Bate·tD-Emitter Voltage VBE 10 150' 2.5 v
• Common Emitter, Small·Signal,
Forward Current Transfer Ratio hfe
f'" 1 kHz 30 100
'" 1 kHz 50 275
'" 1 kHz 10 45 275
== 20 MHz 10 50 2.5 5" 5" -
* Input Resistance: 20 30 24 34
f == 1 kHz 10 8
* Small Signal Reverse Voltage 1,25 x 3x 10 4 -
Transfer ~Feedback) Ratio: 10-4
f'" 1 kHz hrb 10 1.25 x '3-x 10-4 -
10"
* Output Conductance: 0.5 0.5
JJmho
f = 1 kHz 10 0.5 0.5
* Output Capacitance:
10 15 15 15 15 15 25 pF
IE' 0
* Input Capacitance:
85 85 80 BO 80 80 pF
VEB' 0.5 V
Gain-Bandwidth Product 50 120 100 100 100 MHz
Noise Figure:
Circuit Bandwidth ~BWl = 1 Hz
Reference signal freq, "" 1 kHz
Generator resistance IRG) = 10 0.3 10· dB
500 n 12N2405)
1 kn 12N2270)
* Saturated Switching Time 30 11'
Thermal Resistance:
Junction-to-case R8JC 68.3 35 35 35- 36 58..3 °elW
~J~Un~c~tio~n~.t~o~~=m7bl~en~t-------+~R~8J~A~~r----+----t---~---r--~~21~9~--~~17~5~r-~~17~5~--~~17~E1I=+--~~17~5~---i-;2«19rl
* 2N·Series types in accordance with JEDEC registration data_ a Pulsed; pulse duration = 300 ,.,.s, duty factor ~2%_
56
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405, 2N3053,2N3053A, 40366,40389,40392,41502
Cot.L..ECTQR-TO-EMlnER VOLTAGE ''tEla lOY
~200
II I IV--
i: III ~t ~
r~~
1\
I" L••
r
1-1- ~7 V t'\ 1\
~.. V
c(
e
I-~
,\
I \
u
ioI Y
I-
Z
'"
II:
II:
~
10
COLl.ECTOR CURRENT iIcI-mA
10 . lOS
:::l
Fig. 6 - Typical dc beta characteristics for
~ 100
o 8 2N3053, 2N3053A, 40389, 40392.
~...J
...J
8
4 6 8 10 2 4 6 8100
COLLECTOR-TO-EMITTER VOLTAGE (VCE-V
92CS-IS736RI
Fig. 4 - Maximum operating areas for 2N2405.
Fig. 7 - Typical transfer characteristics

for 2N1613, 2NI711, 2N1893,
2N2102,2N2405.
I-
Z
W
0::
0::
:::J Fig. 8 - Typical transfer characteristics for
0
2N3053, 2N3053A, 40389, 40392.
0::
0
I-
0
w
-' 0.1
-' B
0
0
6
2 4 6 B 10 2 4 6 8 100 2 4 6 81000 BASE-TO-EMITTER VOLTAGE:IVSEI- v NCS_ln~1
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V

92CS-27989
Fig. 9· Typical input characteristics for

Fig. 5 - Maximum operating areas for 2N3053 and 2N3053A. 2N3053, 2N3053A, 40389, 40392.
57
POWER TRANSISTORS
2N697, 2N~99, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405, 2N3053,2N3053A, 40366,40389,40392,41502
·
;r.·
~
-:
1000 ' II&-AIR TtMPERAl\IR£ (T'A'- 215"'
\~
~ ...... fo- e- ~.,.

m-AIII TlMIIPA'NI! eT,.,- ZS"'
t--
~~ r:: ;:::~.,.
;/ V f.,--~
I
f- f- 1
· 1/ vf-'"" ~
I'~ "-
-b
I ···
100
!:! •
"1-
!·
t- eo t- I!oc
I
"- I
"-
, ~
10 10 I
I
~
· I
10
aAlN- BANDWIDTH
20
'"
PO:"" Tf
40
COLLECTOR-TO-EMITTIELII VOLTS lYer) '"
(Mc).oIOO
00
I 10
· I
10
1A1N-IANDWIDTH PO ....
10
I
'" 40
(f )oo1OO1iIIH1
eo
I
10
'"
. ,.
-I -10
REVERSE-BIAS VOLTS (Vs£ OR Vee I
-100
Fig. 10· Typical gain bandwidth product Fig. 11 - Typical gain bandwidth product (fTi Fig. 12 - Typical capacitance characteristics
(fTi for 2N1711, 2NI893,2N2405. for 2N699, 2N1613, 2N2102, 2N2270, for all types.
2N3053, 2N3053A, 40389, 40392.
10 EMITTER oPEN. I
,
z • I I
J
~; 2 "N' ECTOR
REs I I. 1000
MILLIAMPE BASE MILLI~ERES (tal- 100
~), ;no . 110
~!I I'~ ilL

iw~:g II, 50
"5
*~~~ ,
5
4
-~ 0 ~
JUNCTION TEMPERATURE ITJ1-·C
100
'''' -" -50 0 I
FREE-AIR TEMPERATURE ITFAI--C
I I
Fig. 13 - Typical collector-cutoff current Fig. 14 - Typical collector-to-emitter saturation Fig. 15 - Typical base-to-emitter saturation
characteristics for 2N699, 2N 1893, characteristics for 2N 1893, 2N2405. characteristics for 2N1893, 2N2405.
2N2405.
COLLECTOR-le-EMITTER VOLTS (VCE '

92(S 1I'~5
Fig. 16 - Tvpicallow-current output character-
Fig. 17 - Typical low-current output character- Fig. 18 - Typical/ow-current output
istics for 2N699, 2N1613, 2N2102,
istics for 2NI711. characteristics for 2N1893.
2N2270, 41502.
2 4 6 e 10 o 5 10 15 20
COl.l.ECTOR-TO-EMITTER VOLTS (VCE)
" COLLECTOR-fe-EMITTER VOLTAGE (VCEI-V
Fig. 19 - Tvpicallow-current output Fig. 20 - Typical high-current output Fig. 21 - TVpica/ high-current output
characteristics for 2N2405. characteristics for 2N699, characteristics for 2N1613,
2N227o. 2N2102,41502.
58
POWER TRANSISTORS
2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502
liil
iti
iJ.l1;g.rf1.H1++H.,+ftE+i'ttl~
cot.lECTOR-TO-EMITTER VOLTS !VeE)
Fig. 22 - Typical high-current output Fig. 23 - Typical high-current output Fig. 24 - Typical high-current output
characteristics for 2N1711. characteristics for 2N1893. characteristics for 2N2405.
Fig. 25 - Typical high-current output charac-

teristics for 2N3053, 2N3053A
40389, 40392.
59
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349,40367

Hometaxial·Base Silicon N·P·N Power Transistors
Features:
General-Purpose Types for Low-Power Applications • High-temperature characterization
These RCA types are hometaxial-base, and class B push-pull audio and servo • High dc beta at 200 mA
silicon n-p-n power transistors intended amplifiers_ • Full switching-time characterization at
for a wide variety of applications in in- 200mA
The 2N 1700 and 40367 are supplied in
dustrial and military equipment. They are the hermetic JEDEC TO-39 package or
Additional features for 40367:
• High realiability assured by five
particularly useful in power-switching cir- TO-39 with factory-attached mounting
preconditioning steps
cuits such as in dc-to-dc converters, in- flange or heat radiator.
• Group A test data in data bulletin
verters, choppers, solenoid and relay
controls; in oscillator, regulator, and
pulse-amplifier circuits; and as class A
40347 40348 40349

2N1479 2N1480 40347V1 40348V1 40349V1
Maximum Ratings,Absolute-Maximum Values: 2N1481 2N1482 2N1700 40347V2 40348V2 40349V2 40367
• COLLECTOR-TO-BASE VOLTAGE _ . . . . . . . . . . . . VCBO 60 100 60 60 90 160 100 V
• COLLECTOR-TO-EMITTER VOLTAGE:
With base open, sustaining . . . . . . . . . . . . . . . . . . VCEO(SUS) 40 55 40 40 65 140 55 V
With emitter~to-base reverse biased
(VEB = 1.5 volts) . . . . . . . . . . . . • . . • . . . . . VCEV 60 100 60 60 90 160 100 V

• EMITTER-TO-BASE VOLTAGE . . . . . . . . . . . . . . . VEBO 12 12 6 7 7 7 12 V
• COLLECTOR CURRENT . . . . . . . . . . . . . _ . . . . . IC 1.5 1.5 1.5 1.5 1.5 1.5 A
PEAK COLLECTOR CURRENT . . . . . , ICM ... ...... 3.0 3.0 3.0 A
• EMITTER CURRENT . . . . . . . . . . . . . . . . . . . . . IE -1.75 -1.75 A
• BASE CURRENT . . . . . . . . . . . . . . . . . . . . . • • . IB 0.75 0.5 0.5 0.5 1A
At case temperature of 25°C . . . . . . . . . . . . . . . , 5 5 5 11.7 11.7 11.7 5W
(40347V2) (40348V2) (40349V2)
8.75 8.75 8.75
(40347) (40348) (40349)
At ambient temperature up to 2SoC . , . .. . . . . . . . 1.0 1.0 1.0 lW
(40347) (40348) (40349)
4.4 4.4 4.4
(40347Vl) (40348VlI (40349Vl)
Operating and Storage . . . . . . . . . . . . . . . . . . . . TC. T stg -65 to 200 ·C
• LEAD TEMPERATURE (During soldering):

At distance.;;' 1132 in 10.8 mm) from seating plane
tor 105 max. .... , .................. TL 255 230 230 230 255·C
*2N·Serieuypes in accordance with JEDEC registration data
TERMINAL DESIGNATIONS
COLLE
CT~f~TO'-fr;TT;Er. ~O\T~f~ (~~~): 4: ~, " ,
.
" "
, dt'
I Iii"t; F::t !::: :::1 illl
JEDEC TD-39
, '0 ,
1
:;
~40
f! tll!!l
" .,.
: .'.," I'"::: ,.,. :;:
,:.)
, 92C5-27512
2N1479-2Nl482,2N1700,
40347·40349,40367
rfft H·I· ,IIIIrli ;j I~ 1'f: B C

~
B~o 'I' ~ANGE)
'~fTIU ;11
~
I:'
.
~ CASE TEMPERATURE !~<f;Jrc t
~ 2
200·C
_6S G C
':j:
• . nr: iJ! ..,
., ttt'
9~C~ <,~"
JEDEC TO-39 with Mounting
Flo...
40347V2, 40348V2,40349V2
O.S I
BASE -TO-EMITTER VOLTAGE (VaE)-
IlH-dHtH
IS
v
rm
COLLECTOR·TO·EMITTER VOLTAGE IVCEI-V
JEDEC TO-39 with Heat

Fig_ 1- Typical input characteristics for Fig. 2 - Typical output characteristics for Radiator
2NI479-2N1482. 2NI479-2NI482. 40347V1.40348V1.40349V1
60
______________________________________________________________________________ POWERTRANSISTORS
2N1479-2N1482, 2N1700, 40347';40349, 40367

ELECTRICAL CHARACTERISTICS. AtCase Temperature (Tel =25"C unless otherwise specified
VOLTAGE CURRENT
CHARACTERISTIC SYMBOL Vde mAde 2N1479 2N1480 2N1481 2N1482 2N1700 40367 UNITS
VCB VeE VEB IC IB IE MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN . MAX.
... Collector Cutoff Current: ICBO 30 10 10 10 10 75 4 IJA
TC = 150°C 30 500 500 500 500 1000
... Emitter Cutoff Current lEBO 12 10 10 10 10 IJA
6 25
... Collector-To-Emitter
Voltage:
With base-emitter junction
reverse-biased VCEV 1.5 0.25 60 100 60 100 100 V
1.5 0.5 60
With base open, sustaining VCEO(SUS) 50 40 55 40 55 56
... Base-To-Emitter Voltage VBE 200 V
100
Collector-Emitter
Saturation Voltage VCE!sat) 200 10 1.4 V
... DC Current Transfer Ratio hFE 200 20 60 20 60 35 100 35 100 35 100
100 20 80
Small·Signal Current
Transfer Ratio hfe 4 50Typ.* 50 typ.· 50 Typ.'" 50 Typ." 40 Typ.
... DC Collector-To-Emitter
Saturation Resistance rCElsa!) 200 20 n
200 10
100 10 10
Collector-To-Base Capacitance Cob 40 150 Typ.* 150 Typ.· 150 Typ,· 150 Typ.· 150 Typ. pF
Thermal Time Constant '1 10Typ.* 10Typ,* 10Typ.* 10 Typ.· 10Typ.
Alpha-Cutoff Frequency f.b 28 1.5 Typ," 1.5 Typ." 1.5 Typ.- 1.5 Typ.* 1.5Typ. MHz
Switching Time:
Delay Time td- 0.2 Typ.· 0.2 Typ.· 0.2 Typ.* 0.2 Typ.· 0.2 Typ.
Rise Time t,- 1 Typ." 1 Typ.· 1 Typ." 1 Typ." 1 Typ.
Storage Time ~~~ 0.6 Typ." 0.6 Tvp.- 0.6 Typ.· 0.6 Typ." 0.6 Typ.
Fall Time tf- 1 Typ." 1 Typ.* 1 Typ.· 1 Typ.· 1 Typ.
- Thermal Resistance:
Junction-to-case ROJC 35 35 35 35 135 35
Junction·to-free air ROJFA 200 200 200
1200 1200
*2N-Series types in accordance with JEDEC registration data.
-IC = 200 mA, 181 = 20 rnA, IB2 "" -85. rnA
I 1 1U 1
~IOOr- -f J,!j1 J~
•~
""r-r- ",'.'~
't.-#-":''' "'OWt- I I 'VCf' 4V i
a
.. -'i r.P"-,,
v7'
T I-'"'"
"I..pfu
.1
ill
'~~'I
;~;
i
VCE'IV oj.
Ig ':r-i _. -- r-
COLLECTOR CURRENT (ICl-A
COLLECTOR CURRENT C1cl-A

92CS-11573RI "
f ~, •
1..
, , .. , ..Ii
I
COllECTORCURRENTClc)-mA
, 100
, ,I " I. .
Fig. 3- Tvpical dc beta characteristics for Fig.4- Typical dc beta characteristics Fig. 5- Typical dc beta characteristics
2N1479-2N1482. for 2N1700. for 40347.
_____________________________________________________________________...--61
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349,40367

ELECTRICAL CHARACTERISTICS, At Case Temperature fTC) =25°C unless otherwise specified
CHARACTERISTIC SYMBOL VOLTAGE CURRENT UNITS
Vdc Adc 40347 40348 40349
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX.
Collector-Cutoff Current
With external base-to- 30 - , - - - -
emitter resistance ICER 60 - - - 1 - - JJ.A
IRBE) = 1 kQ 90 - - - - - 2
30 - 1 - - - -
With RBE = 1 kr2 ICER 60 - - - 1 - - mA
and TC = 150°C 90 - - - - - 1
Emitter-Cutoff Current lEBO -7 - 10 - 10 - 10 JJ.A
4 0.15 - - - - 30 125
DC Forward-Current 4 0.30 - - 30 125 - -
Transfer Ratio hFE 4 0.45 25 100 - - 10 -
4 1.00 - - 10 - - -
Collector-to-Emitter
Sustaining Voltage:
With base-emitter junction VCEV lsus) -1.5 0.050 60 - 90 - 160a - V
reverse biased
With base open VCEOlsus) 0.050 40 - 65 - 140a - V
4 0.15 - - - - - 1.1
Base-to-Emitter Voltage VBE 4 0.30 - - - 1.3 - - V
4 0.45 - 1.5 - - - -
Collector-to-Emitter 0.15 15mA - - - - - 0.15
Saturation Voltage VCElsat) 0.30 30mA - - - 0.75 - - V
0.45 45 mA - 1 - - - -
Forward-Bias Second Break- 38 345 - - - .- -
down Collector Current ISlb 63 - - 208 - - - mA
I 1-s non-repetitive pulse) 138 - - - - 95 -
20Imax.) 20Imax.) 20lmax.)
Thermal Resistance: 40347 4034B 40349
Junction-to-Case ROJC 15Imax.) 15Imax.) 15lmax) °C/W
40347V2 40348V2 40349V2
Thermal Resistance: 40Imax.) 40lmax.) 40lmax)
Junction-to-Ambient ROJA 40347V1 40348V1 40349Vl °C/W
a Pulsed; pulse duration = 300 /-IS, duty factor ~ 2%.
COlLECTOR.TO·ENITTER'JOlTACiEfVCEl-4V COLLECTOR·TO·EMITTER VOL rAGE (VeE)' lGV f+t--+-+-t--H

120 H-l-+++-t--H-I-+-+- '10
I CASE TEMPERATURE fTC)' 25Gc
i
;;;
100 H-l-+++-+- l200

i
II !
!u
2.0 f---+--+-+++-l~-+-++t--+-+-t--H
-
. 1}'<l'1
r ~ 160
~
r--
(,~,. ">-4.~'""
.~~\; -
I. , , i /
£'
1.2
-
, ~
l~
.-tj. '"
~:,
120
U
:: 60
, :--~
a~
~ ,~ I ~ 0.8
~
;
_0 M
i~
,.." I
~
~ 20 i 10
,;...
,/
~
I~
zG.4
~
I
i
.. , , ... , ." I I
g g I
i i;
COLLECTORCURRfNTflCl-mA
0
0.1
, . I
" 1.0 , 10
COLLECTOR CURRENT (lCI-IIA
100 1000 i'10 '1 1
COLLECTOII CURRENT (leI-IlIA
02 ;. 'IOl
Fig. 6- Typical de beta characteristics for Fig.7- Typical dc beta characteristics for Fig. 8- Typical gain-bandwidth product vs.
40348. 40349. collector current for 40347,
40348 and 40349.
62 ____________________________________________________________________
POWER TRANSISTORS
2N1479-2N1482, 2N1700, 40347-40349, 40367
COLLECTOA-TO-EMITTER VOLTAGE (VCEI-V

92Ct.!-11555R2
Fig. 10-Typical output characteristics for 2N 1700.

92SS-3596F!1
Fig.9-Maximum operating areas for 40347, 40348, and 40349.
CASE TEMPERATURECTtl' 2SDC

CASETEMPER'ATUREtTC)·tSCIC CASE TEMPERATUR£(TC)'?5OC ---t - - .-. ~.+
zoo r-----~ T T
.
8ASECURRfNT/lal- 4I1A
BASECURRENTfla)"1I11A
'10 ,., -'------t-.--
... , 1'0 '.0 I :+=--l---
1
~IOO
1
, -- f-----,
1
~.
BASECURII(NTlla)'BIIIA
,
!,140
!1211
Z.5
2.0
_
I ~ lao 1-f.;...!--+-4--"'!'"-'_.f.-_.J_
~
!
1m ~
1;
200
, tt:=t::=t:=t:::r,:.o=t=t:::::j
Blao ,
I ~
jj'GO ,
10
~ :fb.-+_+_+_";O;;"'--I .... __
" If--f--f-. ~------
-=
1.0 '.0 '.0 4.0 '.0 '.0 '.0 '.0 '.0 '.0 '.0 '.0 I.D '.0 '.0 '.0 ,0
COlLECTOR-TO'E-'ITTERVOLTAGE(VCE)-V CDLLECTOR-YD·EMIlTER VOLTAGE IVCEI-V COLLECTOR·TO·E.ITTERVOLTAGEf'~CE)-V
Fig. 11-" ypical output characteristics for Fig. 12- Typical output characteristics for Fig. 13- Typical output characteristics for
40347. 40348. 40349.
COllECTOR-TO·[MITTERVOLTAOE{VCEI·4V COlLEC1OII,lO-EMITTERVOL1AGEIVCE1"4V
m
j,~ ....
'10 -
160 fl I
(GO ! ~
It
II
Iq
~UD r - r-ll-
f/=
--f-
5 300
.1''1 iloo 1--- .._f--
~
e" f--- i=1
~~.I'.e a
§~
~1'
!lIGO f-- f - ,I;~I / ~ 0 ~
~ q
f-,7}-
f-- f- 8/
--- f--
!( Y " 1-- j
0.'
/
0.' 0.1 1.0
0.' 0.' 0.' 0.8 1.0 1.2 1.4
BASE·YIHMITTER VOllAGE (V8E)-V 8ASE·TO·[MITTERVDlTAGEIVIIEI-V SASE·TO·EMITlERVOLTAGEIVSEl-V
Fig. 14- Typical transfer characteristics for Fig. 15- Typical transfer characteristics for Fig. 16- Typical transfer characteristics for
40347. 40348. 40349.
63
POWER TRANSISTORS
2N1479-2N1482, 2N1700,40347-40349, 40367

<I 10- : ;~~i~~~~~~;~T-EERM~TE~~:TZ~~~~~~~~:I~~~~V I <I
10- 6 COLLECTOR-TQ-EMITTER VOLTAGE Il/eEl-60V
: BASE -TO-EMITTER RESISTANCE (RSEl' 1000 "
llo-e s 1.10- 4 6
~ : ~ ~
,
~ , ~
I- 10-6 I- IO-~e
i
~ 10- 1;
l i ;
~ IO-6~
~ IO-8~
~ :~..
::J 10- 9 8
o ,
u 4r--
10-102
-100 -50 ~ 100
CASE TEMPERATURE (TC)--·C
CASE TEMPERATURE (TC1-OC
CASE TEMPERATURE {TCl-~C
Fig. 17-Collector-cutoff-current characteristic Fig. 18-Collector-cutoff-current characteristic Fig. 19-Co/lector-cutoff~current characteristic

for 40347. for 40348. for 40349.
COLLECTOR - TO-EMITTER VOLTAGE {VeE) =4V
COLLECTOR CURRENT (lcl:BASE CURRENT(ISI' lD

CASE HMPERATURE ITel - 25~C
[-~I / V
1,000
< .00 I---- - [--
I~ 500
. .;/// V
~
~ 400
§
/"l •
g200 //
~ /; i 10
8 ~ 0.1
L--~~--+,-~,~o 75 -~,o~o~-~,,~,--~~--~~ 0.' 0.'
COLLECTOR·TO·EMITTER SATURATION VOLTAGE, VCElSATl--V"".",,, 0.5 15
JUNCTION TEMPERATURE- ~c
BASE-TO-EMITTER VOLTAGE (VB~-V
92CS-11569RI
Fig. 20- Typical leakage characteristics for Fig.21- Typical saturation characteristics for F;~.22- Typical input characteristics for
2NI479-2NI482. 40347, 40348 and 40349. 2N1700.
50 100 150 200

0'
8ASE-TQ-EMITTER VOLTAGE \VSE1- II
JUNCTION TEMPERA1\JRE' - ·c
Fig. 24-Reverse-bias second-breakdown

Fig. 23 - Typical leakage characteristics characteristics for 40347, 40348
for 2N1700. and 40349.
64
POWER TRANSISTORS
2N1483-2N1486, 2N1701, 40368

Hometaxial·Base Silicon N·P·N Power Transistors
General-Purpose Types for Medium-Power Applications Features:
These RCA types are hometaxial·base regulator, and pulse amplifier circuits;
• High·temperature characterization
power transistors of the silicon n·p·n and as class·A and class·B push·pull audio
• High dc beta at750 mA
type intended for a wide variety of appli- and servo amplifiers.
• Full switching·time characterization
cations in industrial and military equip· at 750 mA
ment. They are particul~rly useful in These transistors feature high beta at
power·switching circuits such as in de· high current, and excellent high-temper· Additional Features for 40368:
to-dc converters, inverters, choppers, ature performance. They are supplied in
solenoid and relay control; in oscillator, the JEOEC TO·S hermetic package. • High reliability assured by five pre·
Maximum Ratings, Absolute·Maximum Values; 2N1483 2N1484
2N1485 2N1486 2N1701
conditioning steps
40368 • Group A test data in data bulletin.
• COLLECTOR·TO·BASE VOLTAGE. VCBO 60 100 60 V
• COLLECTOR·TO·EMITTER VOLTAGE:
With base open (sustaining voltage). VCEO(SUS) 40 55 40 V
With emitter-to-pase reverse
b;ased (VEBI ·1.5voll51. VCEV 60 100 60 V
• EMITTER·TO·BASE VOLTAGE. VEBO 12 12 V
• COLLECTOR CURRENT .. Ie 2.5 A TERMINAL DESIGNATIONS
• EMITTER CURRENT. IE -3.5 -3.5 A
• BASE CURRENT .. A
(0
IB 1.5 1.5
At case temjJerature of 25°C 25 25 25 W Ie) 0"
At case temperature of 100°C. 14.1 14.1 CASE
• TEMPERATURE RANGE: ® ©
Operating and Storage . , . . . . . . . . -65 to +200 'e
PIN TEMPERATURE (Culling,soldering): JEDEC·TO·8
At distance >1/32 in. (0.79 mini
from seating plane for 10 s max, 235 'c
·2N·Series types in accordance with JEOEC registration data
COLLECTOR-IO-EMITTER VOLTAGE (VcEl'4vl

, , rrrn
q ifl iff tiit;
It .
25
0.5 I 15 2
COL:L.ECTOR CU.RRENT t!cl-A 92C$-11514 III BASE-IO-EMITTER VOLTAGE (VBE*-V 92C$-1157IRI
92CS-IO" .. 4R2
Fig. 1 - Typical de beta characteristics for Fig. 2 - Typical dc beta characteristics for Fig. 3 - Typical input characteristics for
2NT483-2NT486, and 40368. 2Nl10,T. 2NT10T.
COL.LECTOR-TO-EMITTER VOLTS
COLLECTOR-IO-EMITTER VOLTAGE {veEI-V
Fig. 4 - Typical input characteristics for Fig. 5 - Typical output characteristics for Fig. 6 - Tvpical output characteristics for
2NT483-2NT486. and 40368. 2NT483-2NT486, and 40368. 2NT10l.
65
POWER TRANSISTORS
2N1483-2N1486, 2N1701, 40368

ELECTRICAL CHARACTERISTICS, at Case Tempereturtl (TC) = 25"C unless otherwisespeclfiflfi
"
CHARACTERISTIC VOLTAGE CURRENT UNITS
Vde mAde 2N1483 2N1484 2N1485 2N1486 2N1701 40368
Vce VCE IC Ie MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
* ICBO 60 - - - - - - - - - 750 - -
30 - 15 - 15 - 15 - 15 - 100 - 9
!J.A
At TC = 150°C 30 - 750 - 750 - 750 - 750 - 1500 - -
lEBO
VEB=12V 0 - 15 - 15 - 15 - 15 - - - 5 !J.A
=6 0 - - - - - - - - - 50 ' - -
* hFE
4 7508 20 60 20 60 35 100 35, 100 - - 35 100
4 3008 - - - - - - - - 20 80 - -
20 25008 - - - - - - - - 5 - - -
* VCEO(sus) 10ea 040 - 55 - 40 - 55 - 40b - 55 -
V
* VCEV
VBE = -1.5 V 0.25 60 - 100 - 60 - 100 - - - 100 -
* VCEX
VBE=-1.5V 0.75 - - - - - - - - 60b - - - V
* VBE 4 750 8 - 3.5 - . 3.5 - 2.5 - 2.5 - - - 2.5

4 3008 - - - - - - - - - 3 - - V
20 25008 - - - - - - - - - 13 - -
* VCE(sat) 750 40 - - - - - - - - - - - 0.75
V
25008 1000 - - - - - - - - - 12.5 - -
* rCE(sat) 750 75 - 2.67 - 2.67 - 1 - 1 - - - - n
300 30 - - - - - - - - - 5 - -
Cob 40 175 (typ.) 175 (typ.) 175 (typ.) 175 (typ.) 175 (typ.) - - pF
* 1'1 10 (typ.) 10 (typ.) (10 (typ.) 10 (typ.) 10 (typ.) - - ms
* fab 28 5 1.25 (typ.) 1.25 (typ.) 1.25 (typ.) 1.25 (typ.) - - - MHz
* fhfb
28
6
0.5
5
10(
-
-
- - - - - - - 350
1 (typ.)
- - - kHz
MHz
td- 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) - -
t r- I (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - - !J.s
t s- 0.8 (typ.) 0.8 (typ.) 0.8 (typ.) 0.8 (typ.) 0.8 (typ.) - -
tf- 1.1 (typ.) 1.1 (typ.) 1.1 (typ.) 1.1 (typ.) 1.1 (typ.) - -
* ROJC - 7 - 7 - 7 - 7 - 7 - - °CM
* ROJA - 100 - 100 - 100 - 100 - 100 - -
a Pulsed, pulse duration = 300~S, duty factor == 1.8%. • Ie = 750 mA, 'Sl' == 20 rnA, 182 == -8.5 rnA. * 2N-8eries types in accordance with JEDEC registration data.
EMITTER OPEN.
2 COLLECTOR·TO-BASE VOL15=30
'l.
10
.,
e COL.LECTOfH'O-BASE VOLTAGE (VceI-3QV
L
~ ,
v i
Ii
10 :
2
.-- v
L
/
, , 1--- ' -
I.-
f-.f----
10
,, ."'' '......... ''
,
~o 75 100 125 ISO 17S 200
, 50 00, 200
'50
JUNCTION TEMP£FlATURE-"C. JtJNCTION TEMPERATURE (T"I-·C
'2CS-IO'Sez
Fig. 7 - Typical ca/lectar-cutoff current far Fig. 8 - Typical co/lector-cutoff current
2N1483-2N1486 and 40368. characteristics far 2N1701.
66 __________________~--------------------~----------~-----------
POWER TRANSISTORS
2N1487-2N1490, 2N1702, 40369

Hometaxial-Base Silicon N-P-N Power Transistors
General-Purpose Types for High-Power Applications Features:
These RCA types are hometaxial-base regulator, and pulse-amplifier circuits; • High-temperature characterization
power transistors of the silicon n-p-n and as class-A and class-B push-pull • High dc beta at 1.5A
type intended for a wide variety of ap- audio and servo amplifiers. • Full switching-time characterization'
plications in industrial and military equip- These transistors feature high power- at 1.5A
ment. They are particularly useful in dissipation ratings, high beta at high
power-switching circuits such as in dc-to- current, and excellent high - temper- Additional Features for 40369:
dc converters, inverters, choppers, sole- ature performance. They are supplied in
noid and relay controls; in oscillator, the JEDEC TO-3 hermetic package. • High reliability assured by five pre-
conditioned steps
2N1487 2N1488
Maximum Ratings,Absolute-Maximum Values; 2N1702 • Group A test data included.
2N1489 2N1490
40369
• COLLECTOR-TO-BASE VOLTAGE . . . . . . . . . VCBO 60 100 60 V
• COLLECTOR-TO-EMITTER VOLTAGE:
With base open (sustaining voltage), . . . . . . VCEO(SUS) 40 55 40 V TERMINAL DESIGNATIONS
With emitter-to-base reverse
60 V c
biased (VEB) = 1.6 volts) . • . . . . . . • • • . . . 60 100
'~
VCEV
• EMITTER-TO-BASE VOLTAGE . . . . . . . . . . . . . V
VEBO 10 10
• COLLECTOR CURRENT . • . . • . . . . . . . . . . . . IC 6 A
• EMITTER CURRENT •. IE -8 -8 A
• BASE CURRENT. . • . . . ........•.. IB 3 2.5 A
At mounting-flange temperature of 2SoC 75 75 75 w
At mounting-flange temperature of 100°C. 43 43 w JEDEC TO~J
OPtirating and Storage . . . . . . . . . . TC, T stg - - - - - -66 . 0 2 0 0 - - - - 'c
PIN TEMPERATURE (During soldering):
At distance~1/32 in. (0.79 mm)
from seating plane for 10 5 max. -----235----- 'c
·2N-Seria~ _typ~~_in ac~ordan~ with JEDEC registration dat~
BASE MIL.LlAMPERES·75
50
25
20 4()
92CS-I04!'>4RI COLLECTOR-TO-EMITTER VOLTS
Fig. 1 - Typical de beta characteristics for Fig. 2 - Tvpical de beta characteristics for Fig. 3 - Typical output characteristics for
2N1487-2N1490, and 40369. 2N1702. 2N1487-2N1490, and 40369.
I I I
8A$[-TO-£t.lITTEA VOLTS (VB[) 92CS-I004Y1.2
BASE-TO-ENITTER VOL..TAGE eVae-v 92CS-Ir567RI
Fig. 4 - Typical input characteristics for Fig. 5 - Typical input characteristics for Fig. 6 - Typical output characteristics for
2N 1487-2N 1490, and 40369. 2N1702_ 2N1702.
67
(
)
?
'I
2N1487-2N1490, 2N1702, 40369

ELECTRICAL CHARACTERISTICS Mounting-flange temperature = 25"C unless otherwise specified
DC DC DC DC
COLLEC- EMITTER COLLEC- BASE -
CHARACTERISTIC TOR VOLTAGE TOR CURRENT TYPE TYPE TYPE TYPE TYPE TYPE UNITS
VOLTAGE CURRENT 2Nl487 2N1488 2N1489 2N1490 2N1702 40369
(VOLTS) (VOLTS) (rnA) (mA)
VCB VCE VEB IC IS MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN . MAX.
• ICSO 30 - 25 - 25 - 25 - 25 - 200 - 10 IlA

60 - - - - - - - - - 1000 - -
At TC= 150°C 30 - 1000 - 1000 - 1000 - 1000 - 2000 - - IlA
lEBO 6 0 - - - - - - - - - 100 - - IlA
lEBO 10 0 - 25 - 25 - 25 - 25 - - - 6 IlA
VCEX 1.5 0.25 - - - - - - - - - - 100 -
1.5 0.5 60 - 100 - 60 - 100 - - - - - V
1.5 1 - - - - - - - - 60 b - - -
• VCEO(sus) 100 0 40 - 55 - 40 - 55 - 40b - 55 - V
hFE 4 1500 15 45 15 45 25 75 25 75 - - 25 75
4 800 - - - - - - - - 15 60 - -
20 5000 - - - - - - - - 3.5 - - -
'CE(sat) 1500 300 - 2 - 2 - - - - - - ~ -
1500 100 - - - - - 0.67 - 0.67 - - - - n
800 80 - - - - - - - - - 4 - -
VBE 4 1500 - 3.5 - 3.5 - 2.5 - 2.5 - - - 2.5
4 250 - - - - - - - - - 4 - - V
20 300 - - - - - - - - - 20.5 - -
VCE(sat) SOOO 2000 - - - - - - - - - 20 - - V
Cob 40 200(typ.) 200(typ.l 200(typ.l 200(typ.) 200 (typ.) - - pF
* TI 12 (typ.) 12 (typ.) 12 (typ.) 12 (typ.) 12 (typ.) - - ms
fab 12 100 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - - - - MHz
fhfb 6 100 - - - - - - - - 300 - - - kHz

28 0.5 - - - I - - I - - I - 1 (typ.) - - MHz
td· 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) - -
,
t· 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - .- Ils
1,. 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.) - -
It· 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) - -
R9JC - 2.33 - 2.33 - 2.33 - 2.33 - 2.33 - - elW
• 2N-5erias types in accordance with JEDEC registration data. • Ie:: 1.5 A, lB' == 300 rnA, IB2 = -150 rnA
IO~B COLLECTOR-lO-BASE VOLTAGE {VCB)=30 V +-----.~

,1--. +--+--+-'---f- \-----1""/
"1 4f----+---j---+-+----j--+--¥'----I
I /
i
a~:~~~
102
=r=--.-:t v
L J----J.---+-.,J¢ffi4 --I---f.---J.-'----I
.~ :r---
~
2$ 1!1 100 200 50 100 I!lO 200
,JUNCTION T[MP[FtATUR[_oC JUNCTION TEMPERA"TURE CTJl-OC
/J2CS-IOM3
Fig. 7 - Typical collector-cutoff current

characteristic for 2N 1487-2N 1490, Fig. 8 - Typical collector-cutoff current
and 40369. characteristics for 2N 1702.
68
2N3054, 2N6260, 2N6261, 40250,40372, 40910, 40911

Hometaxial-Base, Medium-Power Silicon N-P-N
Transistors . Features:
Rugged Devices for Intermediate-Power Applications in
• fT = 800 kHz at 0.2A (2N3064,
Industrial and Commercial Equipment 40372)
These RCA types are hometaxial-base Types 40250Vl, 40372, 40910, and • Maximum safe-area-of-operation
silicon n-p-n transistors intended for a 40911 are the 40250, 2N3054, 2N6260, curves for dc and pulse operation
wide variety of medium- to high-power and 2N6061 with factory-attached heat • VCEV(sus) = 90 V min (2N3054,
applications. Types 2N3054, 2N6260, radiators intended for printed-circuit- 2N6261)
2N6261, and 40250 are supplied in board applications. • Low saturation voltage: VCE(sat)
the JEDEC TO-66 hermetic package. 1.0 V at IC = 0.5 A (2N3054)
40250 2N6260 2N3054 2N6261
Maximum Rating!. Absolute-Maximum Values: 40250V1 40910 40372 40911 Applications:
• COLLECTOR·TO·BASE VOLTAGE . . . . . . VCBO 50 50 90 90 V
COLLECTOR·TO·EMITTER VOLTAGE: • Power switching circuits
With base open . . • . . . . . . VCEO 40 40 55 BO V • Series- and shunt-regulator driver and
With external base·to-emitter
o utpu t stages
resistance (ABEl == lOOn. . . . . . . VCER(sUS) 45 60 85 V
With base reverse-biased • High-fidelity amplifiers
IVSE • ·1.5 VI . . . . . . . . . VCEv(susl 50 50 90 90 V • Solenoid drivers.
.. EMITTER-TO·8ASE VOLTAGE .. VEBO V
'II- CONTINUOUS COLLECTOR
CURRENT .. IC 4 A TERMINAL DESIGNATIONS
• CONTINUOUS BASE CURRENT. IS A
.. TRANSISTOR DISSIPATION: PT
At case temperature up to 2SoC. 29
1402501
29
12N62601
25
12N30541
50
12N6261I
W
E~FLA~GE)
At ambien't temperatures up to 2SoC. 5.8 5.B 5.B 5.B w
At temperatures above 2SoC.

140250VlI 1409101 1403721 1409111
- - - - D e r a t e linearly to 200°C - - -
o 0
.. TEMPERATURE RANGE: JEDEC T().68
B 2N3064. 2N6280. 2N82S1. 40250
Storage & Operating (Junctionl . -65 to 200 °c '2(:5-275'6
PIN TEMPERATURE (During soldering):

At distance;;;:' 1/32 ih. (0.8 mm)
from seating plane for 10 s max. 235 'c
*In accordance with JEDEC registration data format JS·g RDF·10 (2N30541, JS..s RDF·2 (2N6260, 2N6261)
f
C
JEDEC T().66 with Heat R8diltor
40250V1, 40372, 40910. 40911
IHEAT RADIATORI
i
CASE TEt.FERTURE ITCI-25"C
~
~ 90 L~ 1 ill
N6261"'40gfl
i~
VCEO
-H-r H.~ill. I
'0
~i 70 r- I
III I ;
~:~60 IT VCEO
f L~ I III ill
~
'0
6O- 4 0g/0
[I
m-: VJEO
. ... .I ...
40
~ o I IIII III III

246' 246' 246'
10 100 IK 10K lOOK
EXTERNAL BASE-TO-EMITTER RESISTANCE (RBE) -;2~S-11526
10 100
COLLECTOR-To-EMITTER VOLTAGE IVCE)-V 9255- 3363R2 Fig. 2 - Sustaining voltage vs. base-to-emitter
resistance for 2N3054, 2N6260,
Fig. I-Maximum operating areas for 2N3054 and 2N6260. 2N6261, 40372, 40910 and 40911.
69
POWERTRANSISTORS _______________________________________________________________________________
2N3054, 2N6260, 2N6261, 40250, 40372, 40910, 40911

ELECTRICAL CHARAMERISTICS. At C_ Temper.tu,. (Tc) .. 26"C un'- oth_illl ttpSClfi«l

CHARACTERISTIC SYMBOL 2N6260 40260
I 2N3054
UNITS 2N6261
VOLTAGE CURRENT 40910 4025OV1 40372 40911
Vdc Adc
VCE VBE IC 18 MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
.. Collector:.cutoff Current: .
I CBO
VCB= Ie = 0 - - - - - - - 1
With be... open 30.
Iceo 30 0 - 1 - 0.5 - - - -
60 0 - - - - - 0.6 - -
40 -1.5 - 5 - - -. - - -
With base-emltter ICEV 80 -1.5 - - - - - 0.5 - - mA
junction reverse-biased 90 -1.5 - - - 1.0 - - - -
ICBO VCB = IE =0 - - - - - - - 5
30
40 -1.5 - 26 - - - - - -
At TC = 150°C I CEV 80 -1.5 - - - - - 1.0 - -
90 -1.5 - - - 6.0 - - - -
-5 0 - 5 - - - - - 5 mA
.. Emitter-Cutoff Current lEBO -7 0 - - - 1.0 - 0.2 - -
Collector-ta-Base
V(BRICBO
0.05 - - - - - - 50 - V
Breakdown Votlage
Collector-ta-Emitter VIBRICEV -1.5 0.05 - - - - - - 50 - V
Breakdown Voltage
COlleCtor-ta-Emitter
Sustaining Voltage:
With base open VCEO(su,1 O.la 0 40 - 55 - 80 - 40 - V
With external base-to-emitter
re,;stance I R BEl = 100H VCERl,u,1 0.1" 45 - 60 - 85 - - -
Emitter-ta-Base
Breakdown Voltage V(BRIEBO - - - - - - 5 - V
IE = 0.005 mA
2 4a 3 - - - 5 - - -
2 1.5' - - - 25 100 - -
.. DC Forward-Current hFE 4 3a - - 5 - - - -
Transfer Ratio 4 0.5" - - 25 150 - - - -
4 1.5" 20 100 - - - - 25 100
.. Collector-to·Emitter VCE(s.t) 0.5 a 0.05" - - - 1.0 - - - -
Saturation Voltage 1.5 8 0.15" - 1.5 - - - 0.5 - 1.5 V
3" la - - - 6.0 - - - -
2 1.5 - - - - - 1.5 - -
.. 8ase-ta·Emitter Voltage VBe 4 1.5 - 2.2 - - - - - 2.2 V
4 0.5 - - - 1.7 - - - -
.. Common-Emitter Small·Signal
Short-Circuit, Forward
Current Transfer Ratio 'hfe 4 0.1 0.03 - 0.03 - 0.03 - - - MHz
Cutoff Frequencv
• Magnitude of Common·Emitter.
Small-Signal, Short-Circuit
Forward Current Transfer ihlei 4 0.1 2 - - - 2 - - -
Ratio If • 0.4 MHz)
• Common-Emitter. Small·
Signal, Short-Circuit hie 4 0.1 25 25 - 25 - - -
Forward Current
Transfer Ratio If = 1 kHz~
Forward-Bias Second 40 0.725 - - - - - - -
Breakdown Collector ISlb 80 - - - - 0.625 - - - A
Current It . 1 I) 55 - - 0.455 - - - - -
Thermal Resistance: 6Imax.) 7 (max.) 3.5 (max.) 6 (max.)
Junctlon-to-Case R9JC 2N6260 2N3054 2N6261 40250 ·C/W
Junction-to-Ambient R9JA 30 (max,) 30 (max.) 30 (max.) 30 (max.)
40901 40372 40911 40250Vl
.PullOCl: Pul,. duration. 300/.11 duty factor' 1.8'1(,. o'n 8CCCII'd8nc:e with JEDEC rllliitrotion eIata format JS·g RDF·l 0 (2N3054) JS-6 RDF·2 (2N82f1O.61)
70
___________________________________________________________________________________ POWERTRANSISTORS
2N3054, 2N6260, 2N6261, 40250, 40372,40910, 40911

TI.':·'~o.~
•, .,...·
; :-.,1'--,
~ '0
. ·· \ \
~ '\. "".,\"1',,,
~ i\ '\ i''''.oi'.t
~
~'"
i·
"\
I~ 1\ \R ~ ~
lto.-t- t.J.~
. . .. . . .. . .
'0' '0'
NUMBER OF THERMAL CYCLES
0'0
NUMBER OF THERMAl. CVCLES
Fig. 3· Thermal-cvcling rating chart Fig. 4 . Thermal·cvcling rating chart for Fig. 5 - Thermal·cvcling rating chart for
for 2N3054. 2N6260. 2N6261.
i~~UCTi~7tf~~~~~~IJ2-~OCm;-: -::;:,:-:;:1::::11 ,~:_

.... .... ... L: .'" ~ Ie:
l IT, ;1,:;: II :ii "" '" , . '" ,,:,1::1".

i :::1 "':1 ~ L: LL ~L.
'!
lEI: ~ll Ii::
10
I'
ii
II
""I
'0 Ii
•
t:! '::'
....z I
w
,I: iHi' i Ii UJ.! BASE·TO.EMITTER VOLTAGE IVaEI-V
" :i ,.
0:
0: I,il ' '. lii, Fig. 7 - Reverse-bias second-breakdown
~
I']: Ij~
I'
0
0:
;' I; I: I,' I i ,I
characteristics for all types.
....00
w I 11'1
..J
..J
0
0 II'
-j:I,:
I :-1
ilj 1 L
'iFt H
j:
I 1;,:;111
0.1 Hit
10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE1-V
92CS-'9~20
10 4 6 e 102 6 a 103
COLLECTOR CURRENT (tel-mA
Fig. 6· Maximum operating areas for 2N6261.
Fig. 8 - Tvpical gain·bandwidth product
for all types.
SASE-rO-EMITTER VOLTAG£ (V8EI-V

Fig. 9 . Tvpical input characteristics for 92CS-19sn
2N3054, 2N6260, 40250, 40250 VI, Fig. 10 - Tvpical input characteristics for Fig. 11 - Tvpical output characteristics for
40372, and 40910. 2N6261 and 40911. 2N3054 and 40372.
71
POWERTRANSISTORS ________________--__________________________________________________________- -
2N3054, 2N6260, 2N6261, 40250,40372,40910,40911
.. 30
OOU.ECRIIHo-W1TTIR VOL'T": {Vcr, 1 - II
Fig. 12 - Typical output characteristics for Fig. 13 - Typical output characteristics for
2N6261 and 40911.
-,-
Fig. 14 - Typical transfer characteristics for
2N3054, 2N6260, 40250,
2N6260 and 40910.
40250VI,40372and40910.
COLL.£CTOR-TO-EMITTER VOLTAGE (VCE""V
l! 0
I I
0.001 1.0
lAst-TO-EMITTER YOL.T_ (YaEl-V
COLLECTOR CURRENT (lCI-A
Fig. 15· Typical transfer characteristics for Fig. 16 - Typical input characteristics for Fig. 17 - Typical dc beta characteristics for
2N6261 and 40911. 2N6260, 40250, 40250VI, 2N626040250, 40250 V 1 and
40372 and 40910. 40910.
COLLfCTOA-TO-EMITTER VOL.TAGE ('.ICE)' 4V COlL.EClOR-TO-EMITTER VOLTAGE ('.ICE)' 4'.1
II II J I t" !
0
~
II'~~ 0 \~~
t6
j.~l~.·o 1'. i SO
\l~.·o
~6C I--hL<.;,o;<'~
-....;:
In - f-- j---,V'.§:<, "
/.¢' "
!. ~ ~~
~
! '0
I--It~""
./.>!!-~ "
~
~ 1\" 1\"
;
~
g
24
0
.. 0.0\ 0.1 1.0
. I' . .
g 0
0.001 0.01 0,1 1.0
.
0.001
COL.L.ECTOR CURRENT CI e'.... COLL.ECTOR CURRENT IICI-4
UCS-19541
Fig. 18· Typical de beta characteristics for Fig. 19 - Typical dc beta characteristics for
2N6261 and 40911. . 2N3054 and 40372.
72
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955

Silicon N-P-N and P-N-P Epitaxial-Base High-Power Transistors
Rugged, Broadly Applicable Devices Features:
For Industrial and Commercial Use • High dissipation capability
The RCA·2N6594, BDXI8, MJ2955, and and 150 watts (MJ2955) at case temperatures • Low saturation voltages
RCS618 are epitaxial·base silicon p·n·p tra.n· up to 25°C. • Maximum safe-area-of-
sistors featuring gain at high current. The They differ in voltage ratings and in the operation curves
RCA·2N6569, 2N3055, and RCS617 are currents at which the parameters are con· • Hermetically sealed JEDEC
epitaxial·base silicon n·p·n transistors. They trolled. All are supplied in the steel JEDEC TO-204MA package
may be used as complements to the 2N6594, TO·204MA hermetic package. • High gain at high current
BDX18 or MJ2955; and RCS618, respectively. The 2N3055 is also available in a hometaxial· Applications:
These devices have a dissipation capability of base version. To obtain the hometaxial·base • Series and shunt regulators
100 watts (2N6569 and 2N6594), 115 watts type order the 2N3055 (Hometaxial).
• High-fidelity amplifiers
(2N3055, BDXI8, RCS617, and RCS618),
• Power-switching circuits
MAXIMUM RATI NGS, Absolute·Maximum Values: • Solenoid drivers
N·P·N 2N6569 2N3055 RCS617 TERMINAL DESIGNATIONS
P·N·P 2N6594· BDX1B· RCS61S·
MJ2955·
* VCBO · 45 100 100 V
VCER(,u,)
RBE " 100 H. 45 70* 85 V
* VCEO(,u,1 40 60 80 V
* V EBO 5 V
* IC' 12 15 15 A
JEDEC TO·204MA
ICM 24 A
* IS' 5 A
* IE 17 A
* PT
At T C ";;;25 0 C 100 { 150 (MJ2955) 115
115 lathers)
At T C >250 C Derate linearlv 0.572 { 0.86 IMJ29551 066
0.66 lathers) .
* T stg , T J -65 to 200 - - -
* TL
Atdistance~ 1/32 in. (0.8 mml from seating
plane fo~ 10 s max. -------235
* 2N-types in accordance with JEDEC registration data .

• For p-n-p devices, voltage and current values are negative.
!!IO 75 JOO 125 150 175 200

CASE TEMPERATURE nc1-oc
Fig. 1 - Derating curve.
"
·
100
100
I
•·
TJ MAX.·toO-(
.......
I
~''lO
; · "'-
l'
~
~ '\,J~.~
I'
~\ ~
I
• 40 04
Fig. 2 -
'r • • 'ID! 'i'
NUNIER OF THERMAL CYCLES
•
Thermal cvcling rating chart for

2N6569 and 2N6594.
" '-
• '106
Fig.
10
'10 5
NUMBER OF THERMAL CVCLES
3 - Thermal·cvcling rating chart for 2N3055,

BDXIS, RCS617 and RCS61S.
Fig. 4 -
6 8105,
t.UMBER OF THERMAL CYCLES
Thermal cvcling rating chart for

MJ2955.
tFor p-n-p devices, voltage and current values are negative,
____________________---------------------------------------------73
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6'594, RCS618, MJ2955

ELECTRICAL CHARACTERISTICS. at Case Temperature (TCi = 2SOC Unless Otherwise Specified ~ ..o COI.I.ECTOA·TO-EMITTEA VOL.TAGE tYeE J. 4 V
CASE TEMPERATURE lTel- U"C

l9
i i
CHARACTERISTIC
VOLTAGE CURRENT 2N6569
'~~'fl. RCS6l7
UNITS ffi 240
~
Vdc Adc 2N6594. MJ2965. RCS61S.
VCE VSE IC 18 MIN. MAX. MIN. MAX. MIN. MAX. !

• 180 /
45 -1.5 - 1 - - - - •II
~
./
"'I"-
- - - - -. 120
~I
ICEX 2N3055. BOX18 100 -1.5 5
MJ2955 100 -1.5 - - - 1 - - rnA I flO
- ~
. , . , ., . , D
-J.5 - - - -
.,.
RCS617, RCS618 100 1
g
* ICEX, TC = 100°C 45 -1.5 - 10 - - - - rnA 0
, 01 10
ICEX, MJ2955 100 -1.5 - - - 5 - 5 COLLECTOR CURRENT II cJ - A 'J"C~ 29003
TC = 150°C 2N3055 100 -·1.5 - - - 30 - - rnA Fig. 5 - Typical de beta Characteristics.•

BOX1~ 60 -1.5 - - - 10 - -
-
ICEO 30 0 - 0.7 ." 0.7' - 0.7 rnA COI.LECTQR-TQ-EMITTER VOLTAG! (YCE'-" v
CAIE TEMPERATURE (Tel. U·C
- - _.
lEBO 5 0 5 - -
i 7
t-
2N3055, BOX18 7 0 - - - 5 - rnA
0
o
MJ2955 7 0 - - - 5 ". - ~ /' .\

RCS617, RCS618 7 0 - - 1
I
." "
.1/ \
,.
VCEOI,u,) 0.2 0 40b Gob 80b V
VCER('u,) -
0.2 0 45b 70b ' 85b V
RBE = 100!!
hFE 3 4a 15 200 z
il
. . ..
I
4 4a 20 70 "
4 sa 20 70
0.01 • II
0.1
, I I
I
, I
10
Except BOX18 4 loa 5 COLLECTOR CURRENT (lei-A 9l!CS· 2900..
4 12a 5 100
Fig. 6 - Typical gain-bandwidth product.•
4 4a 1.S' 1.8'
VBE .V
4 sa I.S
4 0.55 2
VBE(,at) V
4 0.4 2
VCEI,at) 4" 0.4 1.5 1.1
4" 0.55 1.5
sa 0.5 1.1 V
2N3055 only loa 3.3 8
MJ2955 only loa 3.3 3
128 2.4 4
2N6569 4 1 1.5 ..
IT MHz
1= 0.5 MHz 2N6594 4 1 2.5 ..
Ihle 2N3055 4 1 20
kHz aASE-TO-EMITTER VOLTAGE (VIEI-V
1= 10 kHz MJ2955 4 1 10 Uts-uoo!o
Ihlel I = 1 MHz 4 1 - 2.5 2.5 - Fig. 7 - Typical input characteristics.•

MJ2955 (only) 4 0.5 4 "
hIe
",,~,::
1=1 kHz 4 1 15 - 15' 20' 15 -
I
- -
.
ISlb 40 2.5 - 2.87 2.87 A
tp = 1 5 nonre~.
,
Cobo
- -
I
VC8"10V,I= 1 MHz
75 750 - - pF
• .!sL... VCC = 30 V
2 0.2 - 0.4 - - - -
•L IBI =IB2
2 0.2 - 1.5 - - - - /,5
..L 2 0.2 - 5 - - - -
tf 2 0.2 - 1.5 - - - -
2N3055, BOXIB - - 1.5 - - COLL.C·tO.··TO··"!I
..... ,T',· .En. VOLTAGI IYCI)- y
R8JC MJ2955 - 1.75·
- 1.17 - - 'CIW
Fig. 8 - Typical output chBrBctBristics.•

SlICS-UOOI
• For p·n·p deviCes, voltage and currant valu •• ar. neptlve. b CAUTION: Sult.,n,ng voltage. VCEOI.u.1 and
• 2N tVpel in accordance With JEOEC reat.tretion dati, VCERfsul) MUST NOT be me•• ured on I curve
I Pulsed; put.. duration. 300 ~I. duty flctor • 1.8". trlctr.
.For p·n·p devices, voltege and current valuas ara negative.
14 __________________________________________________________________
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955
,000
COLLECTOR-TO-EMITTER VOLTAGE (VCEI- v 92CS-29001RI
Fig. 9 - MaxImum operating areas for 2N3055 and RCS617.
COLLECTOR-TO-EMITTER VOLTAGE (VCE' - V

92CS-29002
Fig. 10 - Maximum operating areas for 2N6569 and 2N6594. •
75
POWER TRANSISTORS
2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955
COLLECTOR- TO- EMITTER V.OLTAGE(VCEI-V

92CM-30558
Fig. 11 - Maximum operating areas for BDX/B, MJ2955 and RCS618.·
100 CASf TEMPE"RATURE (T C )-25· C
II I II
~ I 90 VCER(IUI)
Rc16/7
RCSE;'B
vc~o ,!.Ll
~1 1TT
:-t1
III
80
~ ·t
,oZ..
70
"CER(1II11 It~J~ll
~W llif~5~
~i 60
vcU"ll
ali
;~ 50 VCER(IUI) ttl II I
~~
2N6.594j:
Itt vJEOUS)
40
I.
BASE-TO-EMITTER VOLTAGE (VBEI-V
30
I
:2 ..
Ie.
10
2 .. 68
100
III
2 .. 68
II(
:2 .. 68
10K
III
Ii!" 68
lOOK
9ii!CS-29007 EXTERNAL BASE-TO-EMITTER RESISTANCE {RBEI-A
9:2CS-2900eR!
Fig. 12 - Typical transfe/charactedstics.• Fig. 13 - Sustaining voltage Vi, base-towemitter
resistance .•
+For p-n-p devices, voltage and current values are negative.
76 __________________________________________________________________
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
Hometaxial-Base High-Power Features:

• 2N6254: premium type from 2N3055
Silicon N-P-N Transistors (Hometaxial) family
Rugged, Broadly Applicable Devices • Maximum safe-area-of-operation curves

.'.• Low saturation voltages
For I ndustrial and Commercial Use
• High dissipation capability
The RCA-2N3055 (Hometaxial)', 2N6253, plied in JEDEC TO-204MA hermetic steel • Thermal-cycling rating curves
2N6254 and 2N6371 are silicon n-p-n tran- packages.
sistors intended for a wide variety of high-
The 2N3055 is also available in an epitaxial- Applications:
power applications. The hometaxial-base con-
base version. To obtain the hometaxial-base
struction of these devices renders them highly
type described in this data sheet, order the • Series and shunt regulators
resistant to second breakdown over a wide 2N3055 (Hometaxial).
range of operating conditions. • High-fidelity amplifiers
These devices differ in maximum ratings for 'Formerly 2N3055H.
voltage and pOVl{er dissipation. All are sup- • Power-switching circuits
• Solenoid drivers
• Low-frequency inverters
MAXIMUM RATINGS, Absolute·Maximum Values:
2N3055 TERMINAL DESIGNATIONS
2N6253 2N6254 2N6371 40251
(Hometaxial)
* VCSO ................... . 100 55 100 50 50 V

* VCERlsus)
RSE = 100 n ......... . 70 55 85 45 V
* V CEOlsus) ............... . 60 45 80 40 40 V
VCEV(sus)
V SE =-1.5V ........•• 90 55 90 50 50 V
* V ESO .........•.......... 5 7 5 5 V
* IC .................... c •• 15 15 15 15 15 A
* IS ...................•..... 7 7 7 7 A
JEDEC TO-204MA
* PT :
"'25°C ................... . 115 115 150 117 W
>250 C ••.........•.....••. _ _ _ _ _ Doratelinearly to 200°C _ _ __
* TJ, Tstg ..••.........•.....•.. ..05 to +200 °c
* T L: During soldering. at distances
'1132 in. (0.8 mm) from seating
plano for lOs max. 235 °c
*In accordance with JEDEC registration data formats J5-9 RDF·l0; 2N3055 (Hometaxial)
JS·6 RDF-2; 2N6253, 2N6254. 2N6371.
COLLECTOR~TO~EMlTTfR VOLTAGE 1Vce)-4V

COLLECTOR-lO-EMITTER VOLTAGE IVCEI- 4 V
CASE TEMPERATURE 1Tc1-Z!5-t
! ,\1,.....1.
~
I.
.........
~
~ 60 ./ .I"c,·~;;:;
""
t
t;
I.'
1. 2 7 / \. ; z=~~
---; '.~,.jj,:
~ / ~ 4C <R;
\.
"'
i
Q8
~ \
I~ M
J"\.
~
25 10 75 100 1215 150

CASE TEMPERATURE (Tel -"C
1715 200
e ~
0.01
, . .. \
~I
,
COU£CTOR CURRENT (ICI-A
.,. , .,
1 10
8
.. 0.1
, ... ............
tOU.ECTOR CURRENT Itcl-A
1.0
. .. ,
10
!l2SS~3571I
Fig. 2 - Typical gain-bandwidth product Fig. 3 - Typical dc-beta characteristic. for

Fig. 1 - Current derating curve for all types. for all types_ 2N3055 (Hometa"ia/) and 2N6371.
___________________________________________________________ 77.
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251

ELECTRICAL CHARACTERISTICS. TC = 2fiOC Unless Otherwise Specified.

CHARACTERISTIC VOLTAGE CURRENT ~N3055
Vdc Adc taxial Hon,:1t
2N i253 2N 1264 2N 371 40251 UNITS
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN, MAX. MIN. MAX.
25 0 1.5 1.5
ICEO 30 0 0.7 mA
SO 0
40 -1.5
* ICEX 45 -1.5
55 -1.5 2
100 -1.5 5 0.5 mA
40 -1.5 10 10
* TC 0 150°C 50 -1.5 10
100 -1.5 30
lEBO -5 10 mA
-7 5 0.5
V(BRICBO 0.1 50 V
V(BRICEV 1.5 0.1 50 V
V(BRIEBO
0 5 V
IE 0.01 mA
0
VCEO(SUS) 0.2a 0 SO 45 80 40 40
VCER(SU')
0.2a 70 55 85 45 V
RBE = lOOn
VCEV(susl ·-1.5 O.la 90 55 90 50
• hFE 4 3a 20 70
4 4a 20 70
2 Sa 20 70
aa 15 60 15 60
4 lOa 5
4 15 a 3 5
4 16a 4
• VeE 4 3a 17
4 4a 1.8
2 Sa 1.5 V
aa 2.2
4 IS a 4
• VCElsa,) 3a 0.3a
4a 0.4a 1.1
Sa 0.5a 0.5
aa O.aa 1.5' 1.5 V
lOa 3.3a 8
IS" 3" 4
IS" Sa 4
IS" 4" 4
• h'e
,= 1 kHz 4 15 120 10 10 10
T 800 800 kHz

• Ih'el
,= 0.4 MHz 4 2 2 2
• 'hie 4 10 10 10 kHz
ISlb 39 3
tp = 1 s 40 2.9 2.9
nonrep. 45 2.55 A
50 1.95
80 1.87
~8JC 1.5 1.5 1.17 1.5 1.5 ·CIW
• In accordance with JEDEC registration data 'orma" JS·g RDF·l0: 2N3055H; JS-6 RDF·2: 2N5253. 2NS254. 2N6371.
a Pulsed: Pulsaduration =300I/S.duty factor = 1.8%.
78
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N63 71, 40251

COLt..ECTOR~TO-EMITTER VOLTAGE (VeE).4 v
JJ:.~ 30
I
I 20
.~.....
12!5"e
:-t'"-c
Ii P-----~
IO~,,\t.~~
0 ....
..,••
:to \iC)OZi!l°C
"-
-" ~
~
g
0.01
, ." 0.1
, 1.0
COLLECTOR CURRENT tIc1-A
., . , ., , '0
Fig. 5 - Typical dc-beta characteristics for 2N6253.
COLLECTOR-lO-EMITTER VOLTAGE (VCE ).4 II

:~ 100
.,0
I BOr- r- "
I
,.z,fJo
,<0
I-
80
.,~
~u"
~<~
COLLECTOR-TO-EMITTER YOLTAGEIYCEI- V
'US-SlURS !
l
40 fjt"i;
20
Fig. 4 - Maximum operating areas for 2N6253 and 2N3055 (Hometaxial).

~
g
0.01
. . .. . ... , ..
0.1 1.0
COU.ECTOR CURRENT ttc1-A
,'0
Fig. 6 - Typical dc-beta characteristics for 2N6254.
I IO~
'0' " &
NUMBER 0' THERMAL CYCLES
I ". I 10.
IICS-IOIIIO
Fig. 8 - Thermal·cycling rating chart for
2N3055 (HamataxiaO. 2N6253
and2N6311.
,,.
• 100
/_!~ lQ. J.c
!
i .~
.~~~
~
! . \ ." s ~"'f<l>
10
'''c!)-V i \ '\
..·~!~-~k . . , ~. .. .
COLLECTOR-lII-EIlITTER VOLTAGE
IleS-IIOSft, ..-
Fig. 7 - Maximum operating araa' for 2Ntn54.

~" ~
. ~~
10'
NUMBER OF THERMAL. CYCLES
f'
10
,
Fig. 9 - Thermal-cycling rating chart for
2N6254.
____________________________________________________________________ 79
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
I.
u
[:!
;
8 10
92,CS-20614
Fig. 10 - Maximum Silfe-area-of-opllration at case tllmperature of 2f1' C for 2N6311.
10 100
COLLECTOR-TO-EMITTEA VOLTAGE CVCEI-V
I2CS"20711
Fig. 11 - Maximum Illfe-arsa:"f-fJperstlon lit ClIIII tempersturll of 7od'C for 2NS311.
80 ________~------__~~__- -__--------------------~----------------
POWER TRANSISTORS
2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251
IASE:-TO-EMITTER VOl.TAGEIVE-Y
....sE-le-EMITTER VOLTAGE IVIE1-Y
IICI-4UO""
"<:'-11441
BASE-TO-EMITTER VOLTAGE (VaE)-V
92CS-I21Z6111
Fig. 14 - Typical input characteristics for
2N3055 (Hometaxia/), 2N6371
Fig. 12 - Typical transfer characteristics for Fig. 13 - Typical transfer characteristics for
and 40251.
2N6253, 2N3055 (Hometaxia/), 2N6254.
2N6371 and 40251.
CASE TEMPERATURE ITel·2S· C
10 20 30 40 eo 60 70 80
COL.LECTOR-TO-EMITTER VOLTAGE (l/eEI-v
BASE-lO-EMITTER VOLTAGE (V8E}-V BASE-TO-ENITTER VOLTAGE tVBE1-V
Fig. 15 - Typical input characteristics for Fig. 16 - Typicalinput characteristic. Fig. 17 - Typical output characteristics for
2N6253. for2N6254. 2N3055 (Hometaxia/) and 2N6371.
CASE TEMPERATURE ITe)o25·C
•••0
400
320
240
180
BASE CURRENT {lsI-eO lIlA
t020~040eo607080 I 2 "6~O 2 "6~OO 2 "e'K 2 .ero,,! "--IOIC

COLLECTOR-lO-EMITTER VOLTAGE IVCE1-V EXTERNAL. BASE-lO-EMITTER RESISTANCE {RaEI-a
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V tZCS-I'4!' 92CI-I'44&1112
91(9-1'''4'
Fig. 18 - Typical output characteristics for Fig. 19 - Typical ourput characteri.tics Fig. 20 - Sustaining voltaga ... base·to-emitter
2N6253. for2N6254. re.istanca for all typas.
81
POWER TRANSISTORS ~<~' ______________________ ~ ____________________________ ~~ ____,________ ~ ______
2N3263·2N3266
Fe8tures:
High-Power, High-Speed,' High-Current • Low iaturation voltages -
2N3263 and 2N3266
Silicon N-P-N Power Transistors VeEhatl ·0_75 V Ima.,la'le· 15 A

VSElsatl '1.60 V Ima •• la'ie -15 A
2N3284 and 2N3266
Epitaxial Types for Aerospace, Military, and Industrial Applications
Vce 1..'1 • 1.20 V Imo••1 a'iC • 15 A
VSE Isa,l • 1,80 V Ima._1 a'iC • 16 A
RCA-2N3263. 2N3284, 2N3265, and 2N3266- are n-p-n Typical high-speed switching application. ~ these lran,l.. • High reliability and uniformity of characteristics
epitaxial silicon power transistors designed for high-reliability tors include switching-contrQI amplifiers,. power gites, • High power dissipation '
aerospace, military. and industrial equipment. Their high switching regulators. dc-de converters, and dc-ac inverters. • Fist risa time a1 high collector current -
current·handling capability and fast switching speed make Other recommended applications include dc·rf amplifiers and 0.2 ~IO' 10 A Itypicall
them desirable in applications where high circuit efficiency is power oscillators.
requlrad, TERMINAL DESIGNATIONS
• Formerly RCA 08\1, Nos. TA2492, TA2493, TA2494, and TA24915.
Th. 2N3263 and 2N3264 ar. , ..led in flat 3/4-inch- respectively.
diameter peckage' with radi.1 lead,_ TypeS 2N3265 and
2N3265 utillza tha JED EC TO-63 peckage,
MAXIMUM RATINGS.Abso'ute-Maxlmum Valu..: 2N3284 2N3263

2N3266 2N3266
'COLLECTOR-TO-SASEVOLTAGE, ,_". _"" _ " " " " ' , ' VCBO' 120 150 V
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
Wi,h 1.5 volts IVBElo! revarse bias ,,' _, _, ____ "" "'" VCEXlsu,1 120 150 V
2N3263, 2N3Z84
With external bas8·to-emitter resistance (ABe):S:: 50 n ..... . VCER(SUS) 60 110 V (RADIAL)
With base open . ..... ~ ....•............. '.' ........ ,. VCEO (sus) 60 90 V
• EMITTER-TO-BASE VOLTAGE " " ' " _, _,' _"'" _, "_" VEBO 7 V
• COLLECTOR CURRENT ___ , , , _, " , , _, , , _, , , , , , .. , , _" Ie 25 25 A
• SASE CURRENT __,' , , , , , .. ___ , , ,_ , _, , , , , , , , , , , , , , .. ' 18 10 10 A
• TRANSISTOR OISSIPA nON "'" - , .. , , , , - , , , , , - , , , , __ . Pr Sea Flf/I, ,& 2
Storage and operating (Junction) ... , . , , ....... , , •..• , . - - -65 to +200 - - °C
LEAD TEMPERATURE lOuring soldaringl:
At distance ~ 1/32 in. (0.8 mm) from seating plane for TOP VIEW 92CS-25530
10sm.x . .... ,.,"',., .. " ... ,' ....... ,." ... ,. ---230---- °C 2N32C15.2N3268
(JEDEC TO-831
• In accordance with JEDEC rttgistration deta1ormat.
100
1110
., "C
10 10 so 40 10 10 70
COLLICTOR-TQ-OIITTER IIOI.TAGE I\I(:;!I-II
Fig.3-Safe·operating region as a function

Fig. I-Rating chart for 2N3265 end 2N3266. Fig.2-RBting chart for 2N3263 end 2N3264. of pulse width.
CASE TI!MPlRATlJRE It I-III·C
It '''' 1000,
- MIT Eft VOl..: • V
II "0
I-
! IT
~ 110 1 ~I/
,
~'~H,e
I
~
- -
i!'
"
II .\- r= ~r
100
:-/'
~ so
If- f.--:~
!" 8C ~4 .. rosa...
. .
'r-- r-
I '" 10 )01 it)' 104
EXTERNAL, IAH-TO-IMITTIR flUlSTANCE (111111- '"
iO' 1,0 I,
8ASI!MTO-EMITT£R VOLTAGE 'VeI!I-V
I, 1.6
tIC'Mtl""t
~eCI.tI411I1t
Fig. 4- Typicel sustaining Itoltage vs. base·
to'emitter resistance. Fig. 5- Typical input characteristics. Fig.6-'r¥pical input characterisi;cs.
;'~
82
2N3263-2N3266
ELECTRICAL CHARACTERISTICS A. ea.. Tempora'u," ITel =2soe unl... o!htITWlllllpeclfied 1 •
TEST CONDITIONS LIMITS S ,
CHARACTERISTIC SYMBOL
VOLTAGE CURRENT 2N3284 2N3283
UNITS
i5
Vd. Ad. 2N3288 2N32116 ~
VCB VCE VEl IE II IC MIN. MAX. MIN. MAX.
Collector Cutoff Current: 60 0 - 10 - - I I
V-
eo - - -
i
With aminer ogen 0 4
ICBO /'
60 0 -- 10 - - 0
A. Te = 1250C
80 0 - - 4
mA
V
With base reverse- 120 1.5 - 20 - -
biased
ICEX
150 1.5 - - - 20 •!! -I
- -
·
• Emitter Cutoff Current: 7 0 15 5
g
A.TC= 1250C
Emitter-to-Base Voltage
lEBO
VEBO
7
0.02
0
0
-
7
15
-
-
7 -
5
mA
V
, , , . !!I 6789
BIAS RESISTANCE (RBE)-

10
a
, , 456789
100
·
Sustaining Voltage: VCEO{sus)-
Fig.7- Typical change in ES/b as a function
With base ODen
With external base-to-
0 0.2 60 - 90
V of base-to-emitter resistance.
emitter resistance VCER('u,,- 0 0.2 80 - 110 -
(RBE) ~ 500
• Collector-to-Emitter
VCE('."-
2 20 - 1.6 - 1
V
Saturation Voltage 1.2 15 - 1.2 - 0.75 COLLECTOR-TO-EMITTER VOL.TAGE IVeE)-! V
* Base-to-Emitter
VaE(sa.)-
2 20 - 2.2 - 1.8 ,
Saturation VoltlCle 1.2 15 - 1.9 - 1.6
V
i
10,
~
- -
'I- -r--t,,,,,fS
3 5 35 40 .t.
* DC Forward Current ~
,. Transfer Ratio hFE- 3 15 20 eo 25 75 / V
2 15 - - 20 55 § 't"- -~CJ
* Second-Breakdown a~ I.°e, r= =:1'
Collector Current: t"--$
(Sa. Fig, 3) IS/b" 50 700 - - - ~ ,t"-!f'
DC forward-biased 75 - 350 - mA
g~ 0.1: F~
· Pulsed, forward-
bi...d, tp = 250 ". 75 13,3 - 13,3 - A 1=1:1 I
, ff
• Second-Breakdown Energy
With base reverse-
0.01
0 o. 0.6 n. 10
I' I, 16
biased, and ES/b" 6 10 2 - 2 - mJ BASE-TO-EMITTER VOLTAGE IlIaE)-V
RaE =200. L=4O~H Fig. 8- Typical transfer characteristics.

• Saturated Switching Time:
Turn-on (td + t )
'ON VCC=
1.2' 15 - 0.5 - 0.5
~.
30
Storage '.- 1.2' 15 - 1.5 1.5
F.II 'f 1.21 15 - 0,5 - 0.5
• Gain-Bandwidth Product
(f= 1 MHz) fT 10 3 20 - 20 - MHz
Collector·to-Base Feedback
Capacitance
(f= 1 MHz) Cob 10 a - 500 - 500 pF
2N3263 2N3266
* Thermal Resistance
oCIW
~Ni~.5 ~Ni86,
R6JC
. (Junction·to-Case)
In KCorct.nce with JEDEC ~"tretlon d.UI format.

e PuIMd; pul. dur.tlon s:
10 10
3150 PI, duty 1_1Or S; ~, CAUTION: The Nltalnlnl volUl... VceollU~ .nd VeERI ... I' MUST NOT tM m ...... '.d
on. curv. tree«, Th......ltalnln, vol..... should tM m-.e,.d bV m"M of test circuit_
.: ~~bl~1:;~:.~-:.:.c::~;:: :~:~ === :::::: :~~: ~~:'~.!:~O::It;'.: ~~~~~dltlOnl'

10M! Of luk... Inductance Ind I 'I the collector current.
ES/b _ 112 LI2, whIrl L il I . r .
I'a, -la2'
Fig. 9- Typical transfer characteristics.
lOth PERCENTIL.E, RBE-20 0 HMS

••
• I. ~'. 1'--
cOLL.ECTOR-TO-EMITTEfI VOLTAGE IVeE ,-;, v COL.L.ECTOR SUPPLY VOLTAGE (VcC,·30V '2
rc-12.5Ia,·-12.5IBz 20 ....... ........
240
~
1,4
)
I.
200 ~
~ 14 ~~
Ii..
~!Ieo
a~
~;,~,~c
:1t.~
,.....
I.......
a 12 .
~'" !\.
\
~ 10 '2.
~\
ii'.. dtt~ ~ ••
~
"'"
8~
..'" - ,\ 4
•
.
\.1 \
\lOI '
V
... ... ... .
::.i--
nl ,
COL.LECTOR CURRENT (IC1-A
, 10
, 3 4 !i
COLL.ECTOR CURRENT IICI-A
678910
0
10
, , 5f,789
INDUCTANCE-"H
r--,.........,
100
4 56789
1000
Fig. 10-Typical de beta cHaracteristics Fig. 11- Typical saturated-switching charac- Fig. 12-Col/ector current as a function of
(median values). teristics. inductance (50th percentile).
83
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _-,...._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N3439; 2N3440; 2N4063; 2N4064;40385;

40346, \11, V2; 40390; 40412, V1, V2
High-Voltage Silicon N-P-N Transistors Features:
• High voltage ratings:
For High-Speed Switching and Linear-Amplifier Applications VCBO = 450 V max_ (2N3439,
2N4063)
These RCA types are epitaxial-base silicon indicator and NIXIE- driver circuits and = 300 V max_ (2N3440,
n-p-n transistors with high breakdown in differential and operational amplifiers. 2N4064)
voltages, high-frequency response, and fast Types 40412, 40412V1, and 40412V2 are VCEO(sus) = 350 V max_ (2N3439,
switching speeds_ These transistors are especially suited for class-A ac/dc audio- 2N4063)
intended for industrial, commercial, and amplifier service. = 250 V max_ (2N3440,
military equipment_ Typical applications 2N4064)
These transistors are supplied in JEDEC
include high-voltage differential and oper- TO-39 hermetic packages or in the TO-39 • Maximum-area-of-operation curves
ational amplifiers, high-voltage inverters, package with factory-attached mounting • Low saturation voltages
and high-voltage, low-current switching flange or heat radiator. • Planar construction for
and series regulators_ low noise and low leakage
eNixie is a Registered Trademark of Bur-
Types 40346, 40346V 1, and 40346V2 are roughs Corporation, Electronic Components
especially useful in such devices as neon Division, Plainfield. N.J. Additional Features for 40385:
• High reliability assured by five
preconditioning steps
• Group A test data in data File 215
2N3439 2N3440 40346 40412 TERMINAL DESIGNATIONS

2N4063 2N4064 40346V1 40412Vl
MAXIMUM RATINGS. Absolute-Maximum Values: 40385 40390 40346V2 40412V2
·COLLECTOR-TO·8ASE VOLTAGE .. VC80 450 300 V
COLLECTOR·TO·EMITTER VOLTAGE:
With external base-ta-emitter resistance
IR8EI = 1.0oon. . .. VCERlsusl 175 V
= lO,Ooon .. _ . VCEA(sus) 250 V
With base open .. . VCEO(sus) 350 250 V 92CS-27512
·EMITTER-TO·8ASE VOLTAGE ........ VE80 V JEDEC TO-39
·CONTINUOUS COLLECTOR CURRENT. IC 1 ti. 2N3439,2N3440,40346
·CONTINUOUS 8ASE CURRENT. . 18 0.5 0.5 0.5 0.5 A 40385,40412
TRANSISTOR DISSIPATION: PT
At case temperature up to 2SoC

10 1012N34401 101403461 101404121 w
1012N40641 10140346V2110140412V21 W B C
At free-air temperatures up to 25°C 11403851 3.51403901 4140346VlI 4140412V11 W ~ANGEI
At free-air temperatures up to 50Q C 112N34391 1(2N34401 11403461 11404121 W
~
At free-air temperatures above 2SoC or 50°C Derate linearly to 2000C - - - - - - DC
·TEMPERATURE RANGE:
Storage & Operating (Junction) .. -65 to 200 'C '2ts·2'~11
-LEAD TEMPERATURE (During soldering):
At distances;;to 1/32 in (0.79 mm) JEDEC TO-39 with Flange
from seating plane for 10 5 max. .._ 255 - - - - - - - - 'C 2N4063,2N4064,40346V2,
40412V2
-2N·Series types in accordance wilh JEDEC regIstration data
NOTE: PT value of lOW al TC '" 2SoC and lead lemperalure of 25SoC are registered dala for 2N4063 and 2N4064 only.
HEAT
RAD:TDR
~
c
10 0 MOUN\ING
8 o 0 TABS
E
JEOEC TO-39 with Heat Radiator

COLl.ECTOR-TO-EYITTER VOlTAGE tvCEI • IOV
40390,40346V1,40412V1
COLLECTOR-TO-EMITTER VOLTS (V \-'01
~ 12 :m III \~t!~A-++'!:Htt--t-+tttlttl i 140
,;
~
~ L'c));·.t''/'-t-t1f-H-~.t!t--+-tttttltl
COLLECTOR-TO-EMITTER VOLTAGE IVCE). lOV
~ 100e-- ]Jt...
·<~~.:-flHI-H+HfItt--t-+t+ttttl i 120
~ CASE TEMP£RATURf (Tcl· 2s-e
i 80r-- C~4-t.,.<i~It'~--+H+-Httt-pj__~<H1'!'t1It-+-Ktttt1l ~~
~
~ ,0'~+44+~-~~~--t~~~+t\-tt+H~
1 '00
00
~
~"
!I ~-+~Kffit--t-+~ffi-_'~~~"<~*~~~~ I 60
20~FH+m~_~~~-r+'IH*~I~~,~~
I '0
20
#~
g
0.1 10 00
COLLECTOR CURRENT (lC~A
'1,000
g
0.01
, . ,I I
COLLECTOR C\JIRINT "
IIc)-MlLLIAM~RES
100 IlO
. .. " . .. ...
I 100 1.000
COLLECTOR CURRENT (lei-iliA
Fig. 1 - Typical dc-beta characteristics for Fig. 2 - Typical dc-beta characteristics for
2N3439, 2N3440, 2N4063, 40346. 40346VI, 40346V2, Fig. 3- Tvpical gain-bandwidth product for
2N4064 and 40390_ 40412, 40412V1 and 40412V2. all types.
84
______________________________________• ________________________ ~----------- POWER TRANSISTORS
2N3439j 2N3440j 2N4063j 2N4064j 40385j

40346, V1, V2j40390j 40412, V1, V2
ELECTRICAL CHARACTERISTICS, Case Temperature (TcJ = 2ff1C, Unless Otherwise Specified
LIMITS
VOLTAGE CURRENT 2N3439 2N3440 40346 40412
CHARACTERISTICS SYMBOL 2N4063 2N4064 40346V1 40412V1 UNITS
V de rnA de
40385 40390 40346V2 40412V2
VCE VBE IC MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Coliector·Cutoff Current: 100 - - - - - - 5 - 5

With base open ICEO 200 - - - 50 - - - -
300 - 20 - - - - - -
200 - 1.5 - - - - - 10 - - J.1A
With base reverse·
300 -1.5 - - - 500 - - - -
biased:
ICEV 450 -1.5 - 500 - - - - - -
150 -1.5 - - - - - - - 2
AtTC~150oC mA
200 -1.5 - - - - - 1 - -
With R - 10,000 ohms ICER 100 - - - - - - - 1 mA
Coliector·Cutoff Current ICBO
250 - - - - 20e - - - -
J.1A
360 - - 20c - - - - - -
-3 - - - - - - - 100
Emitter·Cutoff Current lEBO -4 - - - - - 5 - - J.1A
-6 - 20 - 20 - - - -
10 2 30 - - - - - - -
DC Forward·Current
hFE 10 10 - - - - 25 - - -
Transfer Ratio
10 20 40 160 40 160 - - - -
20 30 - - - - - - 40 -
Collector·to· Em i tte r
Sustaining Voltage: VCEO(sus) 50 350· - 250· - - - - -
With base open
Collector·to·Emi tter
V
Sustaining Voltage:
With external base· to·
emitter resistance
RBE~ 1,000 ohms VCER(susl 50 - - - - 175a - - -
RBE~ 10,000 ohms VCER(sus) 50 - - - - - - 250 a -
Base·to·Emitter Voltage VBE 10 10 - - - - - 1 - - V

• Base·to·Emitter
Saturation Voltage V BE(satl 50 - 1.3 - 1.3 - - - - V
IB ~ 4 mA
Collector·to· Emi tter
Saturation Voltage V CE(satl
IB ~ 1 mA 10 - - - - - 0.5 - 0.5
· IB ~ 4 mA
• Small-Signal Forward-
50 - 0.5 - 0.5 - - - -
V
Current Transfer Ratio: hfe 10 10 3 - 3 - 2 - 2 -

f~ 5 MHz
• Output Capacitance:
VCB~10V,f~lMHz
Cob - 10 - 10 - 10 - 10 pF
Second-Breakdown Current -
ISlb 200 - 50 b - 50 b - - 50 mA
tp ~ 0.4 s -
15 max. 15 max.
Thermal Resistance:
Junction-to-case ReJC - 17.5 - 17.5 (40346) (40412)
(40346V2) (40412V2)
°C/W
Junction-to-free air 45 max. 45 max.
Re JFA - - - -
(40346Vl) (40412Vl)
• CAUTION: The sustaining voltages, VCEO(sus) and VCER(sus), MUST NOT be measured on a curve tracer. b2N-Senes types .
c2N3439 and 2N3440 only. *2N-Series types in accordance with JEDEC registration data. 85
POWER TRANSISTORS
2N3439; 2N3440; 2N4063; 2N4064;40385;

40346, V1, V2; 40390; 40412;-Vl~ vi.
8IoSE-TO-EMITTER VOLTAGE (V8EI-V

2N3439, 2N3440, 2N4063,
2N4064 and 40390.
!zILl 4.554
a::
a::
:;)
o
a::
~.
8
j 10
0.' 0.4 0.6 0.7

BASE-TO-EMITTER VOLTS 1'118[1

40346, 40346Vl, 40346V2,
40412, 40412Vl and 40412V2.
6 8
10
COLLECTOR-TO-EMITTER VOLTAGEIYCEI-Y 92LM-1596RI
Fig.4-Maximum operating areas for 2N3439,2N3440,2N4063 and 2N4064.
"
100 120
COlLECTOR-TO-EMITTER VOlTAGE IVCEI-V
HL.$-115OO
Fig. 7 - Typical output characteristics for

2N3439, 2N3440, 2N4063,
2N4064 and 40390.
··
COLLECTOR-TO-EMITTER VOlTS IV: '-10
CASE TEMPERATUR£(TC'-2S-C
I~;
;,0/
-.l .,q;
~
I '
;roo':
~- f - r-~I- f - -
'1;'"
~ ,
~
· ~
~'i)
··
'0, ..... T
! , a.
1.0
BASE-lO-EMITTER VOLTAGE IVBE)-V 9aM-1102
0.' 0.' 0.4 0.' 0.6 07 0 .• " 00 ~ 00 ~ ~ ~ ~ rn
BASE-TO-EMITTER VOLTS IYaEI 92CS-ll61' COLLECTOR-TO-EMITTER VOLTS (VeEI-V 9.2CS-I3210
Fig. 8 - Typical input characteristics for Fig. 9 - Typical input characteristics for Fig. 10 - Typical output characteristics for
2N3439, 2N3440, 2N4063, 40346, 40346Vl, 40346V2, 40346, 40346Vl, 40346V2,
2N4064 and 40390. 40412, 40412Vl and 40412V2. 40412, 40412Vl and 40412V2.
86 ____________________________________________ .____________________
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373, 40912, 40913

Hometaxial-Base, Medium-Power Silicon N-P-N Transistors
Rugged Devices for I ntermediate, Power Applications Features:
in Industrial and Commercial Equipment • 2N6264: premium type from 2N3441 familV
• Maximum safe-area-of-operatiori curves for de and
pulse operation
RCA 2N3441, 2N6263, and 2N6264 are Types 40373, 40912, and 40913 are the
• High voltage ratings
hometaxial-base silicon n-p-n transistors in- 2N3441, 2N6263, and 2N6264 with factory-
• Low saturation voltages
tended for a wide variety of medium to-high attached heat-radiators intended for printed- • Thermal-cycling rating curv~
power, high-voltage applications. These types circuit-board applications. Applications:
are supplied in the JEDEC TO-66 hermetic • Series and shunt regulators
package. • High-fidelity amplifiers
• Power switciling circuits
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6263 2N3441 2N62&4
40912 40373 40"13
"'COLLECTOR-TO-BASE VOLTAGE VCBO 140 160 110
C
'0
COLLECTOR-TO·EM ITTER
SUSTAINING VOLTAGE:
... With base open ...... . VCEO(sus) 120 140 150 V
With external base-to-emitter resistance (R BE ) = lOOn, VCERlsusl 130 150 160 V
With base reverse-biased IV SE = ·1.5 V) VCEvlsus) 140 160 110 V
"'EMITTER-TO-BASE VOLTAGE. V EBO 7 7
"'CONTINUOUS COLLECTOR CURRENT,. 3 3 A
'e
PEAK COLLECTOR CURRENT. 4 A
*CONTINUOUS BASE CURRENT.
TRANSISTOR DISSIPATION:
At case temperature up to 2SoC
'.
PT
20 25
2
50
A
En
(2N6263) (2N3441) (2N6264) JEDEC TO·66
At ambient temperatures up to 25°C 5.8 5 .• 5.8 W 2N3441,2N6263.2N6264
(40912) (40373) (40913)
At temperatures above 25°C Derate linearly to 200°C
*TEMPERATURE RANGE:
Storage & Operating (Junction) - - - -65 to 200 - - - "c +-
E
- b-
*PIN TEMPERATURE lOuring Soldering):
At di!otances21 132 in. (D.S mmJ from seating plane for 10 s max. - - - - 236 ---- °e
e ', e
*In aceordance with JEDEC registration data format JS-6 RDF·2
L-.""& (j)
t
e
(HEAT RAOIATORl
•
JEDEC TO-66 with Heat Radiator
40373,40912,40913
<t
I
u
!:! ~ IC MAX.(CON'n'NUOUS) -
I-
Z
w . '-T~--l-t-!i !
1ti Jrr[
0:
gj Fig. 2- Thermal-cvcle rating chart for 2N6264.
U
0:
::?
u
~
8 l -2.8 :'1
FOR SINGLE =,...,..,,,....,......, ~~·1
NONREPETITIVE
PULSE . ,
--T---·---Y
VCEf) MAX:' 120 V 1.1 .
II
L--:::0.:.:.I.I-_-+---4-~-8-~---2-----4-----6---e--IOO
VCEO MAX.'140V
.____~ ______ ..J
2 4 6 81000
HUMBER OF THERMAL. CYCL.ES
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- V g2CS-lg472
Fig. I-Maximum operating areas for 2N3441 and 2N6263. Fig_ 3- Thermal-cvcle rating chart for 2N3441.
87
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373, 40912, 40913

ELECTRICAL CHARACTERISTICS, At Case Temperature fTC) = 2fjOC, Unless Otherwise Specified

2N6283 2N3441 2N6264
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 40912 40373 40913 UNITS
V de A de
VCE V BE IC IB Min. Max. Min. Max. Min. Max.
Coliector·Cutoff Current:
100 0 5
· With base open
Coliector·Cutoff Current:
ICEO 130
140
0
0
-
.- -- . r-!.~~- --_ ...
1
---- - -
mA
120 1.5 2'

'CEX 140 - 1.5 5'
140 1_5 1
With base-emitter 150 I.S O.OS'
junction reversed -_.- ----- 1----- -.-- -.- rnA
biased 120 I.S 10'
ICEX 140 I.S 6'
IT C IS00CI
:1
140 1.5 5
150 IS I'
• Emitter-Cutoff Current
f - - - - - - - - - ---- r- -- --_. .-
'EBO -S 2
-7 1 .... _. 0.2
. _--- f--------- ._---_ .. ---- --_. ._-- - -- ---
Collector-ta-Emitter
Sustaining Voltage;a
·
VCEOlsusl
With base open _._-_ ... _- O.lb 0 120 140 150
- - -1----- _. - ---- --- f-- ---
emitter resistance VCERlsusl 0.1 130 150 160 V
IRBEI = 100 12
With base-emitter
-- --_._- ---_.- r---- _ . __ . --- _... ---- .. - 1----
Junction reversed VCEVlsusl 1.5 0_1 140 160 170
biased
- - f---- ... - ._- --- f - - 1--
2 lb 20 60
• DC Forward·Current hFE 2 3b 3 5
Transfer RatiO 4 0.5 b 20 100 25 100
4 2.7 b 5
- - -- -- r-tSb
0.05 1.2' 1
Coliector-to·Emitter
'- Ib
Vce lsatl 0.1 0.5' V
Saturating Voltage Vb 0.9 6'
2 1b . 1.5'
Base-to·Emitter Voltage V BE 4 0.5b 2' 1.7 V
4 2.7 b 6'
• Magnitude of Common-
Eminer. Small,Signal.
Shon·Circuit Forward Ihle l
Current Transfer Ratio 4 0.5 5 5 5
If =0.4 MHz)
Gain·Bandwidth Product IT 4 0.2 200 200 200 kHz
• Common·Emitter. Small·
Signal. Shon.circuit hI. 4 0.1 25 - - -- 25 .
Forward Current Transfer 4 0.5 - .. 15 75 •.

Ralio If = I kHzI
Forward·Bia. Second
Breakdown Collector 120 0.167 - - - - -
Current. Pulse Duration 'SIb 120 - - - - 10.417 - A
lnon·r.petitive) = I • 120 - - ~.21 - - -
Thermal Resistance:
Junclion·to.c. . RO JC 8.75Ima •. ) 7Ima •. ) 3.5Ima• .I
2N6263 2N344 I 2N6264 °CIW
Junctio .... to·Ambi.nt RO JA 30 Ima •. ) 30 lma • .I 30 (m••. 1
40912 40373 40913
°ln _lienee wilh JEDEC regittretion dala formet 1.IS-6 RDF-21.

Ic:AUTloH: The ..llaining vollAtge VCEOI ...I, VCERtlUaI. and VCEVI ...1 MUST NOT be m ..... reel on. curve tracer.
bPuIIed• pul .. duration· 300 III; duty factor .$ 2 %.
88--____________ ~_________________________________________________
_______________________________________________________________________________________ POWERTRANSI STORS
2N3441, 2N6263, 2N6264, 40373, 40912, 40913

~~~~E~E:~:;~~~i~~~~;~~~AR~~I.fi~il!i;~;[llil~~~i~f·~~I~1"~~mffi~~~~*ffi
~ITH;INCREASE IN TEMPE~A~UREJ. i !:':: Ulll_1 ,i I
.~
I "
II
'0'
NlJMBER OF THERMAL CYCLES
Fig. 5- Thermal·cvcle rating chart for

2N6263.
CASE TEMPERATURE (1C)-25-C
~-
~.
~~
:!'j I
160
1!l0
VCiR',u,J
JJll, LJJjL[
2N6264,"'0913
'r-- j
~]
I~7 ~ :J[140
I 'r-. J..!.
~~ '''' "~I 'N"" .•001,
10
COLLECTOR-TO-EMITTER VOLTAGE (VCEJ-v
4 6 100 4 6 81000
92CS-19471
r:': , ~
1111
.. 6 e
11I1
10 2 4 6 '00 il 468 II<
'r-.
10K 24,.
EXTERNAL BASE-TO-EMITTER A£SISTANCE (RSE) -
"c£OlllIl)
, , lOOK
n
Fig. 6- Sustaining voltago vs. base· to·
emitter resistance for all types.
COLLECTOR-TO-EMITTER VOLTAGE t~CE)' 4 V COLLECTOR-TO-EMITTER VOLTAGE tv )o4V

1&0 .
]' ''''' /1--';'"
~ 120 JI I o 120f-:~FH'Ii:-+
, -H-tt--t-H-tt--+-++t1
0
~ 140 V'
i '\ I I I I S ~ 120 "-~
; ~..... : -
~~J
80 ~~OO
~
! t ~~
~.!80 V
i \.I~,) . ,
•0
V- I ; ~ \ ·~t:cEl.r:r~ERATURE
.0
I .0 V-
I ~
T
60
I '0
., ' ., 10" ,' ..

:
f~· ~
...
If
I'-~
68_ 1 l!
10
COLLECTOR CURRENT tIel-A
H-. , '0 10. 2 '" • '!Crl 2 4"
COLU:C:rOR CLlRItaIT lie) - ...
2
10
~
~
20
10-3 2 4 '10-2 z . ... .I.
COLLECTOR CURRENT
• '10-1
<'r--.111
,
125~~~
tIc I - A
I
, ~O
g~CS-19~14
Fig. 7- Tvpical dc·beta characteristics for Fig. 8- Tvpical dc·beta characteristics for Fig. 9- Tvpical de· beta characteristics for
2N3441 and 40373. 2N6263 and 40912. 2N6264 and 40.913.
COLLECTO' -TO-EMITTER 'OLTAGE " " I"
!III
:! I
~ I
Fig. 10- Tvpical transfer characteristics for Fig. 11- Tvpical transfer characteristics for Fig. 12- Tvpical transfer characteristics for
2N3441 and 40373. 2N6263 and 40912. 2N6264 and 40913.
89
POWER TRANSISTORS
2N3441, 2N6263, 2N6264, 40373,40912,40913

COi.I.ECTOR-TO"'IMlTTEA YOU"GI CVcrl- .. Ii CASE TlMPERAT!JAE ITC"211i'C
cal. TEMPIRATUfti CTc'-.'- C II
I.'
i
~
r
~O.5
8 ",.
" .. 10 '" '"
10
COLLECTOR CURRENT Uel-rnA
50 100 150 200
COLLECTOR-lO-EMITTER VOLTAGE (VeEI-V '!tS-ieUI
Fig. 13- Typical gain·bandwidth product Fig. 14- Typical input characteristics for Fig. 15- Typical output characteristics for
for all types. 2N3441 and 40373. 2N3441 and 40373.
! !
'"
~).6 I 50 tOO lUG 200

SASl-TO-[M1TTER VOLTAGE IVSE1-V BASi! ~ TO - EMITTER VOt.TA.GE (VIE 1 - II COLLf.CTOIt-TC-EMITTDt WLTAGE tvCE)-Y
I2CS-Inu
Fig. 16-· Reverse·bias ~econd·breakdown Fig. 17- Typical input characteristics for Fig. 18- Typical output characteristics
characteristics for all types. 2N6263 and 40912. for 2N6263 and 40912.
I.'
t0
I I
22
~
Ii
':j 0.5
8
E cURRENT tIl -0 .• 11'1"
0.5 I I 50 100 1&0 200

BASl'-TOoEMITTUt YDLTAGE (VIEI-V COLLECTOR - TO - EMITTER VOLTAGE (VeEI-V
92CS-I'!US
Fig. 19- Typical input characteristics for Fig. 20- Typical output characteristics for
2N6264 and 40913. 2N6264 and 40913.
90 __________- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
2N3442, 2N4347, 2N6262

Hometaxial-Base High-Voltage Silicon N-P-N Transistors
Rugged High·Power Devices for Applications in Features:
I ndustrial and Commercial Equipment • Low .aturation voltage.
• Tharmal-cycle rating charts
• Hi., dissipation capability - 100 W 12N43471
RCA 2N3442. 2N4347, and 2N6262 are hometaxial-ba_. Thesedavices employ the popular JEDEC TO·3 package; they
- 117 W (2N34421
silicon n-p-n transistors intended for a wide variety of differ in maximum ratings for voltage, current, and power.
high-power. high-voltage applications. Typical applications - 150 W (2N62621
for these transistors include power-switching circuits, audio • Maximum area-of-operation curves
amplifiers, series- and shunt-regulator driver and output for de and pulll operation.
stages, dc-to-dc converters. inverters, and solenoid (hammer)1 Applications:
relay driver service.
• Serias and shunt regulaton
• High·fidelity amplifiers
MAXIMUM RATINGS. AlnoIute-MlIlfimum Values: 2N4347 2N3442 2N6262 • Power-switching circuits
.COLLECTOA-TO-8ASE VOLTAGE ..•.•.••••.•......................... V eBO 140 160 170 v
COLLECTOR-TO-EMITTER VOLTAGE: TERMINAL DESIGNATIONS
• Whh baM open •••••••••••••••••••.•••••••••••••••••••••••••••••.• 120 140 150 v
WithrevllrsablaslV BE lof-1.6V .................................... . 140' 160 170 V
·EMITTER~T().BASE VOLTAGE •••••••••••.•••••••••.••••••.•.•••••••• v

·COLLECTOR CURRENT:
Continuous ••••••••••••••••••.••••••••••••••••• • •.•••.•••••••••• 10 10 A
P.k ......................................................... '" 10' 16 15 A
·BA5E CURRENT: Ie
Continuous ••• • ••••••••••••••••••••••.•••.•.••••••••••••••••.... A
Peak •••••••.••••••.••.••.••.•..•.•.•..•.••.••...•.•.••.••..•.•.
.TRANSISTOR DISSIPATION: ,.,. 8' A
At C8Ie temperature up to 26°C .•.••..••.•.•...•....••.•...••.•.•.... 100 117 150 W

At C8IIt tarnpllrlltu.... above 26°C .•.•...•.••..•.••..•..•.•....•.•.••..• Derate linearlv to 200°C JEDEC T()'3
Stol'llgl" Operating lJunctioni •••••••••••••••.••••••...•.••••••••••••• 4--- -66 to +200 -----+
·PIN TEMPERATURE (During Soldllringl:
At dlltances~lI32 in. 10.8 mml from case for 10 s max ••••••••..••.•.••••• '236 236 236
'In ltCCord.nCII with JEDEC regtltratlon dlitll form.t (JS~, RDF-2).
CASE TEMPERATURE tTc,-zeec
=
~ 170
.,. ~ ~CE~ III

MAX.
li lSO
!CE~ ~2 VCEO
pleo
10'
ffi~II ~·'IItl JCE~
e,
. l=.!iI40
~ tl ! I
I
U
6: ;
*3 I I
130
1ft'll Jc.J
....
!:!
": ~ 120
z
0:
0:
i
I
la I I
110
24" 2 4'. 2 4" 2 4"
I 2 4'8
I
il 2~ I 10 100 IK 10K lOOK
EXTERNAL aASE~TO-EMITTER RESISTANCE tRIIE 1 - 0
~ 'Xl-In,..
[;l
.J ,. .. Fig.2-Sustaining voltage vs. base·to·emitter
zl I t:
u resistance for all types.
.. .~
I
",i
1
l"
2:· ,
0.1 L ..'
I • 6
• 10 100 200
COLLECTOR - TO -EMITTER VOLTAGE (VCE)-V
92$5-3212
Fig. I-Maximum operating areas for 2N3442.

.~. I 4 ' . lOS 2 4 ' .106
NUMIIER OF THERMAL. CYCL.ES
Fig. 3- Thermal·cycle rating chart for

2N3442.
____________________________________________________________________ 91
2N3442, 2N4347, 2N6262

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = :l!1'C unless otherwise specified

CHARACTERISTIC SYMBOL UNITS
VOLTAGE CURRENT
2N4347 2N3442 2N6262
V de A de
V BE IC IB Min. Max. Min. Max. Min. Max.

VCE
Collector Cutoff Current:
With emitter open ICBO - -- - I" - 1 rnA
{V CB -140VI
• With base-emitter junction 120 -1.5 2 - -
reverse-biased ICEX 140 -1.5 - - - 5 - - mA
140 -1.5 --
_.
- - 1 - -
150 -1.5 - - - - 0.1
· With base-emitter junction

reverse-biased and ICEX
125
140
-1.5
-1.5
-
-
10
-
-
-
-
-
30
-
-
-
- mA
Tc; = 1500 C 140 -1.5 - - 10 - -
150 -1.5 - - - - - 2
· With base open ICEO
100
110
140
-
-
~uu
-
-
-
-
-
200
-
-
1
-
mA
* Emitter Cutoff Current lEBO -7 a - 5 - 5 - 0.2 mA

2 3a - - - 20 70
2 lOa - - - - 5 -
* DC Forward Cu frent 4 2a 15 60 - - - -
Transfer Ratio hFE 4 3a - - 20 70 - -
4 Sa 10 - - - - -
4 loa - - 7.5 - - -
ollector-to-Emitter
Sustaining Voltage:
With base-emitter VCEV{susl -1.5 0.1 140 - 160 - - - V
junction reverse- -1.5 0.2 - - - - 170 -
biased
With external base-ta-emitter VCEA{susl 0.1 130 - - - - - V
resistance {ABEl = looH 0.2 - - 150 - 160 -
· With base open VCEO{susl 0.2a

0.2a a
0 120
-
-
-
140
-
-
-
-
-
150
-
- 1
-
-
V
2 3a - -
4 3a - - 1.7 - - -
* Base-ta-Emitter Voltage V BE 4 2a - 2 - - - - V
4 Sa - 3 - - - -
4 lOa 5.7
*rcollector-to-Emitter 2a 0.2 - 1 - - - -
Saturation Voltage VCElsatl 3a 0.3 - - - 1 - 0.5 V
Sa 0.63 - 2 - - - -
lOa 2 - 5
67 1.5 1 - - - - -
Power Rating Test PAT 78 1.5 - - 1 - - - •
100 1.5 - - - - 1 -
• Magnitude of Common-
Emitter, Small,Signal,
ShortwCircuit. Forward
Current Transfer Ratio: Ihfe l
f· 50 kHz
I ' 40 kHz Ihle l
4
4
0.5
1 '-" - - - 2 -
4 2 - - 2 - -
Common·Emitter, Small-
Signal, Short-Circuit, 4 0.5 40 - - - - -
Forward Current Trans· hfe 4 I - - - - 10 -
fer Ratio {f = 1 kHzl 4 2 - - 12 72 - -
IThermal Aesistance:
Junction-to-C...
R8JC - 1.75 - 1.5 - 1.17 °CIW
O'n accordance with JEDEC registration data format JS-6 ADF-2

a Pulse test; pulse duration· 300 j.ls,rep. rate' 60 Hz
92 _________________________________________________________________
----------------------------__________________________________________________ POWERTRANSISTORS
2N3442, 2N4347, 2N6262
COLLECTOft-l'O-Er.!ITTER VOLTAH (VCE)-Y

9255-3211
.I
IO_~
u
!:!
i...
II:
II:
:>
u
6 B 10 6 8100
COLLECTOR-TO-E"ITTER YOLTAGE (VCE)-V

92CS-19566
93
POWERTRANSISTORS ________________________________________------------------------------------___
2N3442, 2N4347, 2N6262

COl.L.r~~~rOt:'!TER vO~:'~Gi,(Vrf 4_~ ._ i
CASE TDPERATUltE ITcl. 20'"C
':-2 100
: /1-[ 1~ kr-.1 I
~I
~. i
1"0
" .0
" \"\ ~IO
LV- Ii . r\'." ...

I~
:~
II UR
i
• ~.J
i i
20
.~~
~
0
. . II . . .. . ..
00
0.1
COLLECTOR CU'-tNT fie I-A
I
2
10
'AS£-lO-f.M'TT£fI VOLTolGE IVaEI-V
~ ~ ~ ~ u ~
COLL.ECTOR-tO-EMITTER VOLTAGE (Vee-V
u ~ q
Fig. 6 - Typical dc beta characteristics Fig. 7 - Typical transfer characteristics for Fig. 8- Typical small-signal output characteristics
for2N3442. 2N3442 and 2N4347. for2N3442.
CASE TPIP£ItATURE (Te'- 20·C
100 I
.~--~--+-4-~--~--4-4-++~
a I~
~
~ 1.0
8
0.'
20 8080100120140
COLLECTOR-TO~EMlTTER VOLTAGE (Veri-V 1
92'liS-3t49 BASE-tO-EMITTER ¥OlTAGE (YaEl-V
NUMIER Of THE"MAL CYCLES
Fig. 9 - Typical large-signal output characteristics Fig. 10 - Typical input characteristics for Fig. 11 - Thermal·cycle rating chart for 2N4347.
for 2N3442. 2N3442.
J701~C=~=Lt'C~'0~R~.'~O·t'·t"+'='R=VtOL=~=G't'=~e~+·+4=v=i__~i_~i'
CASE TEMPERATUM 1Tc).Z5·C
,-.<l
~60/- I1I1 I Ii
•
~ .1 _-+-,,jLf++--+'''...-+-~1... I
:~. "r V ' 'to;.,
•
'.
C'~,I
I
I i! !
.
!
i
.
110
I\~-+---..L...l-.j..j If
"
, "V
40 •
,yt
120'I---+--++-I-+--+--+-+~'~' ..... RfIENT -0.2
8 101 I""]''1'-1;:1
r--l---++t-I---+-++t+--j--»
4 68 2 4611 2 41\8 ~ w ~ ~ u ~ u ~ U 20 40 50 eo 100 110 140
01 1 10 COLLEClOftpTO-EMITTER VOl.TAtI! tYctJ-v
COLLECTOR CURRENT (lcl-A COLLECTOR-TO-ENtTTt:It VOLTAGE r.vce~v
92S5-3226
Fig. 12 - Typical dc beta characteristics for Fig. 13 - Typical small'signal output characteristics Fig. 14 - TVpicallarge-signal output characteristics
2N4347. for 2N4347. for 2N4347.
<00 COLLECTOR-TO- EMITTER VOLTAGE t vCEl= 4V
I/TJ 1AX.. 20l.c }

~ 100
.s " V
100
k 1-
~
I , ...... I
f
." ~...
l:s: ,,~
".
<;..
Vl/
~ ~
~\
1"'.".ot--9. ~ 60
i '>.
~ 1\ 1"'- .~ I;
~4"'''t- ~"
;; 4
\ '\
~. ..
ffi
~
I
~
r '0
2~~N-
1\ "'"0 e
0.8
BAIE-TO-EMITTEft VOLTAH I~-V
1.0
<0ft.
8104
~
Cl "
6
~
8 10 '
2:
~,
6 e
r...
106
g
0
. . .. 0,1
2 ..,
COLL-ECTOR CURRENT tIcl-A
I • 10
NUMBER OF TttERMAL CYCLES

IIISS-HIT
Fig. 15 -Typical input characteristics for Fig. 17 - Typical dc beta characteristics for
2N4347. Fig. 16 - Thermal-cycle rating chart for 2N6262. 2N6262.
94 ________ ~ ________________________________________________________
POWER TRANSISTORS
2N3442, 2N4347, 2N6262
Hrn~HrnHtttrlliHfr+lliHttmHHm
.,
E
j 1,0
'BASE CURRENT (te -0.16 A 8
III '
..• f JHtt~H. Htt
8.
1,0 2.!\ 3.0 3.!\ 4.' COLLECTOR-TO-EhUTTER VOLTAGE (YeEI-V
COLLECTOR-TO-EMIT'TER VOLTAGE (Vc~-V 'tCS-I""
BASE-TO-EMITTER 'VOLTAGE \Vall-V
Fig. 18 - Typical transfer characteristics for Fig. 19 - Typical small'signal output Fig. 20 - Typical large-signal output characteristics
2N6262. characteristics for 2N6262. for 2N6262.
,e
tj
I I COLLECTOR CURRENT (Ie 1/8ASE CURRENT (IS )-10
'f~!--
~ I
,0
J
~ "'~
-~
i -
~ ,
~"
~
~
~
..
,
~"
4-
1'/' ."---
!b: _.
(f
~
--~
I--- - -
, YI t -
. .II.
/
0.1
, , . .. BAst>TO-EMITTER \oOLTAGE (VBEI-V
,
Fig. 21 - Typical input characteristics for Fig. 22 - Typical saturation·voltage characteristics Fig. 23 - Reverse-bias, second-breakdown
2N6262. for all types. characteristics for all types.
____________________________________________________________________ 95
POWERTRANSISTORS ________________________________________----------------------------___________
aN3583-2N3585, 2N4240, 40374

Features for JEDEC Types:
High Voltage Silicon N-P-N Transistor • 100-percent tested to assure freedom
For High-Speed Switching, Linear-Amplifier Applications, and Off-Line from second breakdown in both
Switching-Regulator Type Power-SupplY Applications forward- and reverse-bias conditions
when operated within specified limits
These RCA types are silicon n-p-n transis- These transistors are also intended for a • Economy types for ac/dc circuits
tors with high breakdovyn voltages and wide variety of applications inac/dc com- • Fast turn-on time at high collector
fast switching speeds_ mercial equipment; current
Typical applications for these transistors Types 2N3583, 2N3584, 2N3585, and
include high-voltage operational amplifiers, 2N4240 are supplied in hermetic JEDEC
high-voltage switches, switching regulators, TO-66 packages. Type 40374 is a 2N3583
converters, inverters, deflection- and hi-fi with a factory-attached heat radiator_
amplifiers.
E (FLA~GE)'
MAXIMUM RATINGS, Absofute-Maximum Values;

'COLLECTOR, TO· BASE VOLTAGE
'COLLECTOR·TO·EMITTER SUSTAINING
. VOLTAGE:
VCSO
2N3583
250
2N3584
375
2N3585
2N4240
500
40374
250 v
0 . .,~~-- 2N3585. 2N4240. 40850
With base open ... VCEO(sus) 175 250 300 175 v
1£\:]
'EMITTER·TO·BASE VOL TAGE ., .......... . VESO 6 6 6 V
'CONTINUOUS COLLECTOR CURRENT ...... . IC 1 2 A
'PEAK COLLECTOR CURRENT ICM A
'CONTINUOUS SASE CURRENT .... . IS A
'TRANSISTOR DISSIPATION ........... . PT
At case temperature (TC) '" 25°C .. ,., 35 35 35 w
At ambient temperature (T A) '" 25°C ... 5.8 w f B JEDEC TO·BS with Heat Radiator
At case temperatures above 25°C - - - Derate linearly at 0.2 W/oC - - C 40374
For other conditions ...... . (HEAT RADIATOR I
- - - - - Derate linearly to 200°C - - -
'TEMPERATURE RANGE:
Storage & Operating (Junction) ..... , ... , ... -65 to 200
'PIN TEMPERATURE:
1/16 in. (1.58 mm) from seating plane for 10 s max. 235 235 235 235
*1';1 accordance wIth JEDEC registration data format J9t6 ADF·2 12N35831. JS·6 RDF.l
(2N3584, 2N3585, 2N4240).
I t-1,II~I
COLLECTOR-TO-EMITTER VOLTAGE (VCE): 10 V
~
I I
f 200 Ii
~
2
~
~ 1001
~
~
~
'"" I
I
-
i
I
I
111
t
:11 I1
~,,~~
c~ -
I·
111_
II
~.1
Jl\
I
,-fof-'
-1'
-'!~::: .
••
....
-j
. I
COLL.ECTOR CURRENT (IC)-A
Fig. 3- Typical collector-to-emitter saturation

Fig. 1- Typical dc beta VS. collector current Fig.2-Typical dc beta vs_ collector current for voltage VS. current for 2N3584
for 2N3583, 2N4240 and 40374_ 2N3584 and 2N3585. and2N3585_
96 ____________________________________________________________________
POWER TRANSISTORS
2N3583-2N3585,2N4240,40374
ELECTRICAL CHARACTERISTICS ar C... Tem".,.,"", (TCi • 25"C Unl.., Otherwise Specified
CHARACTERISTICS SYMBOL VOLT· CURRENT 2N3583

2N3684 2N3585 2N4240
AGE 40374 UNITS
V de mA de
lice VBe Ic Ie Is MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
• Collector-Cutoff
ICEO 150 10 mA
Current
225 -IS 1.0
• Collector-Cutoff
ICEV 340 -1.5 1.0 mA
Current
450 -1.5 1.0 2.0
225 1.5
At TC '" 150°C ICEV 300 -1.5 5.0 mA'
• Emitter-Cutoff 100 zoo 300

IESO -6 5.0 0.5 0.5 0.5 mA INOUCTANCE !U-JioH
Current
750' 10 100
lA' 80 80 Fig.4-Reverse·bias second breakdown
* DC Forward-
Current hFE
10 100' 40 40 - 40 40
characteristics for 2N3584 and
10 750' 40 200
Transfer Ratio 10 750' 30 150 2N3585.
10 lA 10 25 100 25 100
Collector-ta-Emitter CASE TEMPERATURE ITCI-2~-c
SustaimngVoltage: IASE-TO-EMITTER VOLTAGE (VBE) --4V
With base open Vceo(sus} 200 a 175- 250" - 300" - 300" - V INDUCTANCE (L.l' 100 ,.,H
With external base- 250 1.0
to-emitterresis-
leER 300 200 1.0 rnA
ta.lee (RSEj=50 ~!. 1.0 1.0
~
Emitter-ta-Base
Voltage VEBO a 5 V
• Base-ta-Emitter 750' 75 - 1.8

V
Saturation Voltage. VSE(satl lA' 100 - 1.4 - 1.4 1.4
75011 75 1.0
• Collector-ta-Emitter V
Vcelsatl lA' 125 - 0.75 0.75
Saturation Voltage
Small-Signal Forwa~d 10 20 30 40
EkTERNAL SASE-TO-EMITTER RESISTANCE (RBEI-A
Current Transfer
92SS-~1I7
Ratio hie
f '" 5 MHz 10 200 3 Fig.5-Reverse-bias second breakdown
f = 1 kHz 30 100 25 350 characteristics for 2N3584 and
Magnitude of Com-
2N3585.
mon-Emitter, Small-
Signal, Short-
Circuit, Forward I hl.1 10 200
CASE TEMPERATURE ITel- 25·C
Current Transfer EkTERNAL. BASE-TO-EMITTER
RESISTANCE (ReEl - 20 A
Ratio
f" 5 MHz
INDUCTANCE IL.I- IOO,.H
"
Output Capacitance:
Cobo 120 120 120 120 pF
VCB"'lOV; f= 1 MHl
Second-Breakdown
Collector Current 100
~
IS/b 350 350 350 350 mA
With base forward-
biased··
Second-Breakdown , 8
Energy with base
reverse-biased ES/b
lA
-4 pk 50 50
. p~-~-~
RSE "20[!.
L"100"H
·8 -6 -4
ltIHWtt±, -2 0
RBE "20U: 2A BASE-TO-EMITTER VOLTAGE (VBEI-V
--4 200 200
L" 100l-lH pk
• Saturated Switching Fig.6-Reverse·bias second breakdown
TfmeCVcC=200VI:
characteristics for 2N3584 and
Ris.eTime t, lA 100 -
(See Figs. 13 & 750 75 - 2N3585.
lBI
Storage Time
(See Figs. 14 & I,
lA 100 - "' COl.L.ECTQR-TO-EMITT£R VOI..TAGE (VeE) - 10 V
-
161 750 75
"
Fall Time
(See Figs. 15 & '1
750 75
40 It --.J&f- --.Jff-
ll-
lA 100
161 f II II
• Thermal Resistance:
ROJC
5 (Max,)
~ '0
Junction-to-Case 2N3583
E il I
Junction-to-
Ambient
ROJA
70 (Max,~
2N35S3
30 (Max,~
70 70 70 °C/W
~ '0
!
l- I
I /
40374
~
l- /
/ /
• In accordance with JEOEC registration data formal JS-6 ROF-2 (2N35831. JS-6 RDF-' (2N3584, 2N3585, 2N4240)
• CAUTION: The sustaining voltages VCEO(susl and VCER(sus) MUST NOT be measured on a curve tracer. 0 V .., '" ,
··Specified vslue of ISlb Tor given value of VCE ss base voltage is increased from zero in a positive direction. O' 0
BASE-TO-EMITTER VOLTAGE 1Vse)-V
to
• Pulsed. pulse duration'" 300 /lS; duty factor <; 2'11..
Fig.7- Typical input characteristics for

all types.
____________~------------------------------------------------------97
POWERTRANSISTORS __________________________________________________________________________
2N3583-2N3585,2N4240,40374
Fig.8-Maximum operating areas for 2N3583, 2N3584, 2N3585, Fig.9-Maximum operating areas for 2N3583, 2N3584, 2N3585,
and 2N4240 (pulse conditions). and 2N4240 (dc conditions).
ol1':o~ ·.~T".)~\":LI ...

·..• IHI •• ·.I·.··
o 0.2 0" 0.6 0.8 1.0 1.2 1.4 1.8 1.8 2.0
COLLECTOR CURRENT (Icl-A
COLLECTOR~TO~EM'TTER VOLTAGE IVcp-V 92S5-!I26I1'
Fig. 1 1- Typical output characteristics for Fig. 12- Typical rise time vs. collector current
Fig. 10-Maximum operating areas for 40374. 2N3583 and 40374. for 2N3584 and 2N3585.
I:ii t
...................11 •• H20 ..... I,
Et
o 0.2 0.4 0.& 0.8 1.0 1.2 1.4 1.1& 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.8 /, 2.0 SO 100 ,eo 200 2$0 300 350
COLLECTOR CURRENT tIcI-A COLLECTOR CURRENT {Icl-A COLLECTOR SUPPLY VOLTAGE (~~c;;!.-\( 92CS-19946
Fig. 15- Typical rise time, fall time, and

Fig. 13- Typical storage time VS. collector Fig. 14- Typical fall timil vs. collector cur- storage time vs. collector supply
current for 2N3584 and 2N3585. rent for 2N3584 and 2N3585. voltage for 2N3584 and 2N3585.
98 __________________________________________________________--_____
POWER TRANSISTORS
2N3715, 2N3716
Silicon N-P-N Epitaxial-Base High-Power Transistors

Features:
Rugged, Broadly Applicable Devices
•. Low saturation voltages
The RCA-2N3715 and 2N3716 are epitaxial- They differ in voltage ratings and in the • Maximum safe-area-of-operation curves
base silicon n-p-n transistors featuring high currents at which the parameters are con- • Hermetically sealed JEDEC TO-3/TO-204MA
gain and high current_ They may be used as trolled_ Both are supplied in the steel JEDEC package
complements to the RCA-2N3791 and TO-204MA hermetic package_ • High gain at high current
2N3792 respectively_These devices have a • Thermal-cycling rating curve
dissipation capability of 150 watts at case
temperature up to 25°C_
Applications:
• Series and shunt regulators
MAXIMUM RATINGS, Absolute-Maximum Values: • High-fidelity amplifiers
• Power-switChing circuits
2N3715 2N3716
* vcso - SO 100 V
* VCEO(susl 60 80 V
7 7 V
• v ESO -
10 10 A
• le- TERMINAL DESIGNATIONS
• IS- 4 4 A
• PT
At Te E;;250C 150 150 W
At Te >25°C Derate linearly 0.S6 - - - wte
• T stg• T J - - - -65 to 200 - - °e
• TL
At distance ~ 1/32 in_ (O_S mm) from seating
plane for 10 s max •• - - - 235 - - - - °c
* In accordance with JEDEC registration data.
JEDEC TO-204MA
10
8 "- '\. 1'.... '\. \
I" "\. f./\
.
•
'\
" 501'.ec~~
~ r\\ "
1u •
~o ......c.OR LESS
280,.-=.
~:'.~~~.~==~t5~~-+~~~d-~~--1
I
u
~ :::: ===--::: ~ 1\ \ \
21--Im •• c&~
5m ..c TO D C ______
!:!
0-
~
!5 ""'IC. TO D· C
"a I ~------+------+------~----~~~~-+
!:!
"
E
!!il
\; \\ ,\
" a.81------+------+------+-------f.....~r\__I u 0.8
eo.• I------+------+------+-------f~~\\_\_1 "o~ .

0.6
1,\\\
~ 0.41------+------+------+--------+---'"1-< '\\\
8 8 0." ~
a.• I-------!------+------L-----f------_1 a .•
CASE TEMPERATURE (TC)-25·C
CASE TEMPERATURE 1Tc)a25-C
(CURVES MUST IE DERATED LINEAR!..'t' ICURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE' WITH INiREASE IN TjMPERATUR( )
1
0.1 0.1
20 30 40 eo 60 ~ ~ ~ ~ ~
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V COL.LECTOR-TO-EMITTER VOLTAGE ('tEl-V 92CM.30111
92CM-301l0
Fig. 1 - Maximum operating areas for 2N3715_

____________________________________________________________________ 99
POWER TRANSISTORS
2N3715, 2N3716
o
ELECTRICAL CHARACTERISTICS. w
;;:
lit elise Temperature (TC) = 25"C Un/ass Otherwise Specified e
~ 100
TEST CONDITIONS LIMITS •
VOLTAGE CURRENT
i
CHARACTERISTIC 2N3715 2N3716 UNITS a!
Vdc Adc
VCE VBE IC IB MIN. MAX. MIN. MAX.
80 -1.5 - 1 - -
* ICEX
100 -1.5 - - - 1
mA
* ICEX. 60 -1.5 - , 10 - - mA
25 so 75 100 125 1!50
CAU TEMPERATURE tTC1-·C
17, 200
TC=150°C 80 -1.5 - - - 10
30 0 - 0.7 - - Fig. 3 - Derating curve.
* ICEO 40 0 - - - 0.7
mA
100
* lEBO -7 0 - 1.0 - 1.0 mA 0
* VCEO(sus)b 0.2 0 60 - 80 - V •I , ~
!:z l~
~J",
* hFE
2
2
4
18
38
10
50
30
5
150
-
-
50
30
5
150
-
-
g
:
~
'I-- r-- l'
I-- r--
g
~
>",
+A
~.,
- -
;; i II \ ~~t-...~_
* VBEa 2 3 1.5 1.5 V c
w 'I-- 1--'" r-
VBE(sat)a 5 0.5 - 1.5 - 1.5 V
~ I' ~">
* Vce(sat)a
5
10
0.5
2.0
-
-
0.8
4
-
-
0.8
4
V
10
I
, , ..<i~",1i, .~ , , ff" .
~n
10
n
0.
NUNBER OF THERMAL CYCLES UN THOUSANDS}

102
• 0
10'
* Ihfe l 10 0.5 5 - 5 - Fig. 4 - Th.rmal-cycling rating chart.

f = 1 MHz
fhfe 10 0.5 30 - 30 - KHz _ 360 COLLECTOR TO-EMITTER VOLTAGE (VCE)-4 V

w CASE TEMPERATURE (Tel- 2S·C
~
* hfe 2 3
f = 1 KHz
10 0.5 25 250 25 250 5
ffi24
r-
* Cob
VCB=lPV 0 - 250 - 250 pF
!
~ 180
VI-' 1'--
f = 1 MHz ia V
120
ISIb
tp = ls 40 2.7 - 2.95 - A I
~
60 f"-
ROJC
• In accordance with JEDEC registration data.
- 1.17 - 1.17 °elW
b CAUTION: Sustaining voltages VCEO (sus)
8 0
0.01
, 4 O. 0.1 , ., . , . .
COLLECTOR CURRENT {I C' - A
10
e Pulsed; pul.e duration = 200 /.IS, duty factor = 1.5%. and VCER(sus) MUST NOT be measured on
a cu rve tracer. Fig. 5 - Typical de beta characteristics for
both types,
-
8 COLLECTOR-TO-EMITTER VOLTAGE {VCE'. 4 V
CASE TEMPERATURE (TC) ~ 2!S·C
i 7
r-r-
:
:.t • /f-" ~
I :/
~
~
Ii •
! 2
!
. ,. , . .. , .
I
0.01 • 0.1 I
.010
COLLECTOR CURRENTtIc'-A
92CS-29004
Fig. 6 - TypiClJI transf., characte,istic. fa, Fig. 7 - Typical input characteristics for
Fig. 8 - Typical gain-bandwidth product for
both types. both types.
both types.
100 ___________________________________________________________________
POWER TRANSISTORS
2N3771, 2N3772, 2N6257, RCS258

Hometaxial-Base, High-Power N-P-N Transistors
Rugged Silicon N-P-N Devices for Applications in Industrial and
Commercial Equipment Features:
• V CEX(sus) at 3 A = 50 V min.
These RCA types are hometaxial base, regulator driver and output stages, dc·to· '(2N3771,
silicon n-p-n transistors intended for a dc converters, inverters, and solenoid 2N6257)
wide variety of high-power, high-current (hammer)/relay driver service. 90V min.
applications. Typical applications for these (2N3772)
All devices employ the popular JEDEC
transistors include power-switching cir- • 15·A specification for:
TO-3 package; they differ in maximum
cuits, audio amplifiers, series- and shunt- hFE' VBE, & VCE(sat)
ratings for voltage, current, and power.
(2N3771,2N6257)
• 10-A specification for:
MAXIMUM RATINGS, Abso/flte-Maximum Values: 2N3771 2N3772 2N6257 RCS258
hFE' VBE, & VCE(sat)
'COLLECTOR TO·BASE VOLTAGE. ... VCBO 50 100 50 100 V
(2N3772, RCS258)
'COLLECTOR TO·EM ITTER VOLTAGE, • Low saturation voltage with high beta
With -1.5 V IVBEI & RBE = 10011 ...... VCEX 50 80 50 80 V
With base open.. . ..... vCEO 40 60 40 60 V
'EMITTER·TQ·BASE VOLTAGE ...... vEBO 7 5 V
'CONTINUOUS COLLECTOR CURRENT IC 30 20 20 20 A
'PEAK COLLECTOR CURRENT ICM 30 30 30 30 A
'CONTINUOUS BASE CURRENT. IB 7.5 5 A
'PEAK BASE CURRENT IBM 15 15 15 15 A
'TRANSISTOR DISSIPATION, PT
At case temperatures up to 25°C 150 150 150 250 W TERMINAL DESIGNATIONS
At case temperatures above 25°C Derate linearly to 200°C -~-
Storage & Operating (Junction~ -65 to 200 - - - - . - - ·C
*PIN TEMPERATURE Wuri'ng soldering):
At distance ;;;"1/32 Ln. (0.8 mm) from seating plane for 10 s max. -----~-----.~
230 ------
"In accordance with JEDEC registration da111 form<ll JS-6 RDF-2.
JEOEC TO-3
.
~ 100
TJM1.J.c
,
I I
TJIrIL.'20Lc I
COLLECTOR-TO-EMITTERVOLTAGENeE .4\1
N'I
'00
, f\ 1'-1 I I
~~'t, I
~ 1'.I'.("'I::-..L
, e-.....f'
~
. !'" r''''f:~~~
··
000
:, ;Df'094 1'
""
~
"
I\I\~ ~
, ;; ~.-~-~ ,
o~K~ ,
568 10 4 105
, "m
. II 8
""<
.1- 68 106
,
·
.,
1\ "- ~
...It~~~~
10"
lerR 1':<"-
. . .. . . .. . IDS
NUMBER OF TItERWAL CYCL.ES
«~J.~.< t--
1'-
'0' COLl.ECTOR CURRENT (ICI-A
Fig. 1- Thermal·cycle rating chart for 2N3771, Fig. 3- Typical dc beta characteristics for
2N3772, and 2N6257. Fig. 2 - Thermal-cycle rating chart for RCS258. 2N3171.
COLLECTOR CURRENT (Ie )/BASE CURRENT (I a)' 10
0. 2.' 92CS-194"
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [VcE ItGlg - I I
Fig. 4 - Typical dc beta characteristics for Fig. 6 - Tvpical saturation·voltage characteristics

2N3772, 2N6257 and RCS258. for 2N3772, 2N6257 and RCS258.
___________________________________________________________________ 101
POWER TRANSISTORS
2N3771, 2N3772, 2N6257, RCS258

ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) =25" Unless Otherwise Specified
VOLTAGE CURRENT
CHARACTER ISTIC SYMBOL UNITS
V de A de 2N3771 2N3772 2N6257 RCS258
lIeB VCE Vee IC 18 MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
* Collector-Cutoff Current ICBO 50 - 2' - - - 4 - - rnA
With emitter open 100 - .. - 5' - - - 5
With base-emitter junction 45 -1.5 - - - - - 4 - -
reverse-biased ICEX 50 -1.6 - 2 - - - - - - rnA
100 -1.5 - - - 5 - - - 5
30 -1.5 - 10 - 10 - - - -
45 -1.5 - - - - - 20 - - rnA
reversed-biased, TC= 150°C ICEX
30 -1.5 - - - - - - - 10
25 0 - - - - - 10 -
30 0 - 10 - - - - - -
With base open ICEO rnA
50 0 - - - 10 - - - 10
, -5 0 - 5 - - - 10 - -
Emitter-Cutoff Current lEBO mA
··7 0 - - - 5 - - - 5
4 3D' 5 - - - - - - -
.. DC Forward Current Transfer 4 20' - - 5 - 5 - 5 -
Ratio hFE
4 15' 15 60 - - - - - -
4 10' - - 15 60 - - 15 60
4 8' - - - - 15 75 - -
Collector-to-E mitter
Sustaining Voltage
With base-emitter June- VCEX(susl -1.5 O.2a 50 .. 80 - 50 - 80 - V
tion reversed-biased
(RBE = 100m
emitter resistance VCER(susl 0.2' 45 70 45 .. 70 .
V
(RBE) = loon
With base open VCEO(sus) O.2a 0 40 60 - 40 - 60
.
- V
4 15' - 2.7 - - - - - -
Base·ta-Emitter Voltage VBE V
4 10' - .. 2.2 - - - 2.2
4 8' - .
- - - 2.2 - -
30' 6 - 4 - - - . - -
20' 4 - .. - 4 .. 4 - 4
.. Collector-ta-Emitter
VCEls.t) 15' 1.5 - 2 - - - - - - V
Saturation Voltage
10' 1 - - - 1.4 - - - 1.4
8' 0.8 - - - - - 1.5 - -
Second-Breakdown
Collector Current
With base forward· IS/b b 60· - - 2.5 - - - 4.2 - A
biased and 1-s 40 3.75 - - - 3.75 - - -
nonrepetitive pulse
Second-Breakdown Energy
With base reverse biased and ES/b c -1.5 5 500 - 500 .
500 - 500 - rnJ
L~40mH, RBE= lOOn
* Magnitude of Common-
Emitter, Small-Signal,
16 16
Current Transfer Ratio
Ihfe I 4 1 4"
(Typ)
4'
ITyp)
4'
16
ITypi
4
16
ITypi
(f ~ 0.05 MHz)
* Common-Emitter, Small-
Signal, Short-Circuit,
Forward Current Transfer hfe 4 1 40 - 40 - 40 - 40 -
Ratio If ~ 1 kHz)
Thermal Resistance:
Junction-to-Case ROJC - 1.17 - 1.17 - 1.17 - 0.7 °C/W
* In accordance with JEDEC registration data formal JS-6 RDF-2_

a Pulsed; pulse duration = 300,us, rep, rate = 60 Hz, duty factor ~ 2%.
b 'Sib is defined at the current at which second breakdown occurs at a specified collector voltage with the emitter-base
junction forward biased for transistor operation in the active region,
c ES/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions. ES/b = Va Ll2,
where L is a series load or leakage inductance and I is the peak collector current.
102
POWER TRANSISTORS
2N3771, 2N3772,2N6257, RCS258
l-
i
u
§-l
10
-l
o
U
0.1 10 100
92CS-28551
Fig. 7- Maximum operating areas for 2N3771, 2N3772, and 2N6257.
10 60 100
92CS-260449
Fig. 8- Maximum operetingareas for RCS258.
-----------------------------------------------------------------103
POWER TRANSISTORS
2N3771, 2N3772, 2N6257,RCS258

COI..L£CTOR-TO~EMI T R L1 VeE -4¥
" "
i u
;J !:!
r r
I
8ASE-TO~£MITTEfIl VOL.TAG£(Va)-Y IASl-TO-EMITTER VOL.TAGI'."'aE)-V
COLLECTOR-TO-EMITTER VOLTAGE IVc:EI-V
HeS-l'505
Fig. 9- Tvpical transfer characteristics Fig. I 0- typical transfer characteristics for

Fig. 11- Tvpical output characteristics for
for2N3771. 2N3772, 2N6257 and RCS258.
2N3771.
BASE-TO-EMITTER VOLTAGIE IYaE)- v COLl.ECTOR-TO-EMITT£R IIOL.TAGE IVeEI-V

BASE-TO-EMITTER VOLTAOE (VSE)-V
nC$-I~I.'i
Fig. 12- Tvpical input characteristics for Fig. 13- Typical input characteristics for Fig. 14- Tvpical output characteristics for
2N3771 and 2N6257. 2N3772 and RCS258. 2N3772, 2N6257 and RCS258.
104 ________________________________________- - - - - - - - - - - - - - - - - - - - - - - - -
___________________________________________________________________________ POWERTRANSISTORS
2N3773, 2N4348, 2N6259

Hometaxial-Base, High Current Silicon N-P-N Transistors
Rugged High-Voltage Devices for Applications Features:
in Industrial and Commercial Equipment • High diuipation capability-
120W 12N4348). 150 W 12N3773). 250 W 12N6259)
• 5-A specification for hFE. VBE. & VCElsat) !2N4348)
These RCA types are hometaxial-base silicon n-p-n tran- • 8-A specification for
converters, inverters, end solenoid (hemmer)/relay driver
sistors intended for a wide variety of hlgh-voltage high· serviClh nFE.VBE. & VCE!'.!) 12N3773. 2N6259)
current applications. Typical applications for these tran· • VCEX-
These devices employ the popular JEDEC TO·3 package;
sistors include power-switching circuits. audio amplifiers, 140 V min 12N4348).160 V min !2N3773)
they differ In maximum ratings for voltage, current. and
series- and shunt·regulator driver and output stages, dc-to-dc 170 V min 12N6259)
power.
• Low saturation voltage with high beta
MAXIMUM RATINGS, Absolute-Maximum Va/uB.:
2N4:MB 2N3773 2N6268 c
'CQ)
·COLLECTOR.TO·BASE VOLTAGE ............ . "eBO ,40 ,60 170 V
COLLECTOR-TO-EMITTER VOL rAGE:
it With base open .......... , ............. . veEO '20 '40 '50 V
With reverse bias (VSE) of -1.5 V
·EMITTER-TO-BASE VOLTAGE ..
, •• VCEX
VEBO
,
,40 ,60 '70 V
V
·COLLECTOR CURRENT:
Continuous
'e
'0 ,6 '6 A
Peak .... 30 30 30 A
·BASE CURRENT:
Continuous ••.•.••..•..•.•.••
Peak .. , .•...•.•...
'. ,. ,.
4 A JEDECTO·3
'5 A
"'TRANSISTOR DISSIPATION:
At case temperatures up to 25°C ...... . .20 '60 260 W
At cllse temperatures above 2Soe .••••.
Oeratalinurlv to 200°C
-TEMPERATURE RANGE:
Storage & Operating (Junction) •....... +----- -65 to +:lOO - - + °e
"'PIN TEMPERATURE (During Soldering):
At distances.2!.1/32 i~ (0.8 mm) from case for lOs mex. 4---230~ °e
*In accordance with JEOEC registt'allon dal. format (J9·6, AOF·21.
·Fig_ 2 - Thermal-cycle rating chart for 2N3773_

'00
· .
• ·
PTJ MAX. "ZOO·C
'{
1
t
~
~
· 1\\ ~~" ~~
~
i ·
\1\ ~~~.
1\ I.J ~
...\~I', . .IR
10
10"
. . .I'.. 10'
NUMBER OF THERMAL ClCLES
10C
,
Fig_ 3 - Thermal-cycle rating chart for 2N4348_
10 100 200 .. S 8 105

COLLECTOR-TO-EMITTER VOLTAGE (YCE )- Y
9258-3288 NUMaER OF THERMAL CYCLES
92CS-194PO
Fig_ 1 " Maximum operating areas for 2N3773_ Fig_ 4 - Thermal-cycle rating chart for 2N6259_
105
POWER TRANSISTORS
2N3773, 2N4348, 2N6259

ELECTRICAL CHARACTERISTICS. At Cit.. T.mplrllture (Tel· 26"e Unl... Oth_i", Specified
TEST CONDITIONS LIMITS j""*"'=t:='i''-r
§ •
V d. Ad. 2N4348 2N3773 2N6259 i oof--+-+-t+-I\J
olieClor·Cutoff Current:
With emitter open, V CB =140 V leBO
VCE VBE IC 'B Min. Max. Min. Ma•• Min. Ma•.
mA
i:
'20 -1.6
r'~H¥
With base-emitter
junction reverse-biased 'CEX '40 -1.5 mA
-
i4~
'50 -1.5 0.2
With ba..... mitter '20 -1.5 10
junction reverse·biased 'CEX '40 -1.5 10 mA
and TC '" 1500 C '50 -1.5
100 20 0.01 0.1 I '10
With base open Iceo mA COLLECTOR CURRENT IZC)-A
'20 10
• Emitter-Cutoff Current leeo -7 inA Fig. 5· Typical dc beta characteristics for
5' '5 60 2N3773.
8' aD
• DC Forward Current
S' " 60
..
"FE
Transfer RatIO
10' 10 "
16' 10
COLl.ECTOR-TO-EMITTER VOLTAGE (VCE 1-" v
... 20
Collector-la-Emitter
Sustaining Voltage:
-1.5 0.1 140 160 170
5
9
I II I
VCEXtsus) V
I' I II I
reverse-biased (RBE '" l00U)
A"'T~~~E.A~U"E' (TC"""c
With 8)(18rnal base-to-emitter
VCERhus) 0.28 140 .150 - 160 - V I'" ,
r
resistance lASE) '" 100n
i
With bas, open VCEO(sus) 0.2· a 120 - 140 150 V
26"
5'
S' 2.2 ~
* Base-Io-Emitter Voltage VSE i
• Collector-Io-Emitter
Saturation Volt.ge VCE(sat)
S'
10'
S'
8'
la'
0.5
O.S
1.26
1.4
L 0.01 0.. I
~
~
,
10
.....
100
COl.LEC~ CURRENT tlcl-A
16' 3.2 2.'
Second-Breakdown Fig. 6· Typical dc beta characteristics
Collector Current
tS/bb A for2N4348.
,.,
With baH forward-billed and
nonrepetitlve putse
80
lao
1.5 -
1.5 - 2.5 -
WitI'! bell revers,e·biased and ESlb c -1.5 2.5 0.126 0.126 - 0.125 - COI.I.E~-TO' MllTE" VOl. AGE IVC£).,211
L" 40 mH, RBe" 100U j~OO
'1\ Magnitude of Common-Emitter, I.... };"IT!~p"lTU.' 1IT,',.:.!.c_
Small.Signal, Short-Circuit,
Ih'·1 - - - ~ 110
Forward Current Transfer
Ratio If .. 60 kHz)
4 4 4
~ '.
-...;:
• Common·Emltter, Smell·
Signal, Short·Circuit,
h,.
1 120
"'S-
40 - ~40 - .0 - Ii .> '\.
For\l\l8rd Currant Transfer
Ratio It .. 1 kHz) 1 80
'\.
Th.rmal A.sistanee
Junction·to·C..a
ROJC 1.46 1.17 - 0.7 °C/W
1. 0
,="
·in .ccordenc. with JEOEC r.gistr.tion data format JS-S ROF-2.
'Pullad; pulsa duration - 300",1, rep. rat.· 60 HI.
b'S/b I. defined •• the curr.nt.t which ,econd breakdown occur, at a spaclfled collector "oltage with the emitter bas. junction forw.rd·bl.tfld for
tran-"tor op.ratlOn In tn. actlva r.glon,
CES/b il defined'l the en.rlly.t which l8Cond br ..kdown oc:cur, under ,pecltl.d rev.n.·bllS condition •. ES/b 1/2l.12 wh,r, l. I. a sarle, load or
~
0.01
. ,,~ ••.1 I
","1
80l.LICTOR CURRENT Ilel-A
. ".'. I. ::-::-::
tlC.· .. 11I
I
laakall.lnductanc, and II, th'!Hak coll.ctor cUrr,nt,

Fig. 7· Typical de beta characteristics
for2N6259.
,
I"H'To-IMln", VOLTAGE lVIII-II
lIel-llll?
Fig. 8· Typical transfer characteristics for Fig. 9· Typical transfer characteristics Fig. 10· Typical transfer characteristics for
2N3773. for 2N4348. 2N6259.
106 _________________________________________________________________
___________________________________________________________________________ POWER TRANSISTORS
2N3773, 2N4348, 2N6259

CASE TEMPERATURE !TC1>25°C.
r'I.' ~ "TTT
BASE CURRENT (Ial- 500 mA

400 rnA
300 mol
100 ",A
5O.A
0.5 I 1.5 2 2.5 l 3.5 4

COLLECTOR -TO-EMITTER 'IOl.TAGE IVCE1-" 12CS.I9555
Fig. 12 - Typical output characteristics

for 2N3773.
CASE TEMPERATURE ITe ). 2S"C
i
~12.5
z BASE CURREI'IT III ). ~o "',A,

~ 10 00 mA
300mA
7.'
~ 200mA
~ S
IOOmA
--lHr-"!.
5O.A
2.'
2i- . • •
0.1 L:.. __ cL;.c·;lLLlLi·l· c.:

2 4 6 8
0.5 LS
COL.LECTOR-TO-EMITTEI'I
2. 2.5
VOLTAG~
3 3.5
I "eE)-V
'21:'-' '155
9255-3286
Fig. 11 - Maximum operating areas for 2N4348. 2N4348.
CASE TEMPERATURE ITe )025'C
1 .!:t12.S
BASE CURRENT Ie' 600 IlIA

OOmA
400mA,
2
aOOmA
100mA
c(
SOmA
I 10
e.> a
!:! 05 I 1.5 2 2.5 3 3,5
6 COLLECTOR-fO-EMITTER VOL.TAGE I\lC[l-V
I-
z 82t'-I'!lS&
L.J
rr: Fig. 15 - Typical output characteristics for
rr:
;:) 2N6259.
e.>
rr:
0
l-
e.>
L.J
...J
...J
0
e.>
ICC II< 10K

EXTERNAL SASE'TO-EMITTER RESISTANCE (RSEI-n
.. VCEO
92CS-I9$'O
Fig. 16 - Sustaining voltage as a function of

Fig. 14 - Maximum operating areas for 2N6259. base-to-emitter resistance for all
types.
107
POWER TRANSISTORS
2N3773, 2N4348, 2N6259

108 COLLECTOR CURRENT (IC~/BASE CURRENT (Ie)' 10 p: CO;~~iT~~R~~:~l~~;XC)
, = 10
.
1°8 '0: FLLECTOR CURRENT Ie/BASE CURRENT 18"10
:---+-+- 1 ·CASETE~PERATU~EITC!.Z~.
.1 y/
l
CASE TEMPERATURE ('t )Jl25°C
i J~f'
, /1/ ~ 2 CASE TEMP. It ). 2S-c /
- 2
"~ /~<125.C ~ iA 8 1,/ ',,,.,
. ,·
120'C ~
,
~':m_fI
~ , B
··, L I
,
~ ~
~
~ ~
~
~
8 8
,
0.'
, I1II , , , .,. 0.01
2
Ii"68
0.1
2 "68
I
COLLECTOR-lO-EMITTER SATUftATION VOLTAGE:
2 "Ii I
10
[VcE<.gl!J-;2~S_3500
0·'
, 1J. . . , . ..
COO~~~CTOR'TO-EMITTER SATURAT~~" VOLTAGE [VCE('Clt~-V I
92CS-ltSS"
Fig. 17 - Typical saturation-voltage Fig. 18 - Typical saturation-voltage Fig_ 19 - Typical saturation-voltage

characteristics for 2N3773. characteristics for 2N4348. characteristics for 2N6259_
I 1.5 2
BASE-TO-EMITTER VOLTAGE (VSE)-V BASE-TO-EMITTER'VOLTAGE I veE I-V
92CS-11I552
Fig. 20 - Typical input characteristics for Fig. 21 - Typical input characteristics for Fig. 22 - Typical input characteristics for
2N3713. 2N4348_ 2N6259_
108 __________________________________________________________________- - -
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _--.;_ __
2N3791, 2N3792
Silicon P-N-P Epitaxial-Base High-Power Transistors
For I ndustrial and Commercial Use • High dissipation capability
• Low satur~ion voltages
The RCA-2N3791 and 2N3792 are epitaxial- pation capability of 150 watts at case • Maximum safe-areas-of-operation curves
base silicon p-n-p transistors featuring high- temperatures up to 25°C • Hermetically sealed JEDEC TO-204MA
gain at high current. They may be used as package
They differ in voltage ratings and in the
complements to the n-p-n types 2N3715 and currents at which the parameters are con- • High gain at high current
2N3716, respectively. These devices are in- trolled. Both are supplied in the steel JEDEC • Thermal-cycling rating curve
tended for medium-speed switching and TO-204MA hermetic package.
amplifier applications and feature a dissi· APPLICA TlONS:
• Series and shunt regulaton
Maximum Ratings, Absolute-Maximum Values:
2N3791 2N3792
o v cso . -60 -80 v • Solenoid drivers
o vCEO • -60 -80 v
o v ESO . -7 -7 V
o IC. -10 -10 A TERMINAL DESIGNATIONS
-10 -10 A
• ICM
* IS· -4 -4 A
• PT
TC ';;250 C 150 150 W
TC >250 C derate linearly 0.86 W/·C
• TJ,Tstg . - - - -65 to 200 - - - 'c
JEDEC TO-204MA
-10
!K) ,..sec.OR LESS c

1 2&0,.. He.
U
I
~~.~~K~·~·====~~~-~~~~-\-4~4 2
!:!" 2
!:!
...z m••c. TO D.C ...
..
5
0: ~
~-I +----r----t---+---~~~~--1 ~-I +----r----+--~~~~~~--~
~ O.8r----+---+-------1----+'~_\_\+_I u O.8r----+----I------i~r_\..-\Iw.---_l
0:
e:.: o.el----+----t----t---+-~._\\_\_l ..:::

~ O.6f----+---+---~\\-\-\.j.---_J
~ 0,4 r----+---+----r----+---'"H o O.4f----+---+---l--..:W..tJ.---~
"
O.2f-:-==C±==:-:::,J-----I----+----i
CASE 'TEMPERATURE (TC}.25·C
O.2'1--:==='==::-7::l:--::-:,..,--.L_---I---~
CASE TEMPERATURE (Tc)-apC
ICURVES MUST BE DERATED LINEARLY (CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE) WITH INCREASE IN TEMPERATURE)
-0./ -0.1
-10 -30 -40 --eo -60 -20 -40 - 60 -a0 -100
COLLECTOR-TO-EMITTER VOLTAGE {.VCEJ-V COLLECTDR-TO- EMITTER VOLTAGE (~~-V 92CM-30121
92CM-&lI20
Fig. 2 - Maximum operating .'BIII for 2N3792.

Fig. 1 - Maximum operating area. for 2N3791.
___________________________________________________________________ 109.
POWER TRANSISTORS
2N3791,2N3792
ELECTRICAL CHARACTERISTICS. at ease Temperature

ITCI - 26°C Un"" Otherwise Specified
VOLTAGE CURRENT
CHARACTERISTICS Vdc Adc 2N3791 2N3792 UNITS
VCE VBE IC IB Min. Max. Min. Max.
• ICEX
-60 1.5 - - - -1 - - rnA
-80 1.5 - - - - - -1
TC=l50°C
-60 1.5 - - - -5 - - as 10 'PI 100 125
"c'--c 150 17& 200
-80 .1.5 - - - - - -5 CAl! TEMPi....,..,.
HeI-11454
• -30 - - - -10 ~
-10
'CEO -40 - , - - -10 - -10
rnA Fig. 3 - Dfltatlng cur....
• - - - -
7 -5 -5 rnA
··
100
'EBO
• VCEO(sus)b -0.2 0 -60 - -80 - V
1• "-
-1 - 150 150 t ~l
-2 50 50 \ 'i~,
• h FE8 -2 -3 - 30 - 30 - ~ 4r- -I' ~~
-4 -10 - 4 - 4 - ~ r- - ' ! '
8 ~
~
ii;;
* VBE
-2
-4
-5
-10
-
-
-
-
-1.8
-4.0
-
-
-1.8
-4.0
V :;
•~ 'r-
i
r-.:' \ \
1\ .~~ -
• VSE(sat)8 -5
-5
-0.5
-0.5
-
-
-1.5 -
-1 -
-1.5
-1
V
I. . ,,\\ ~ ~~
. .
•
4 4 • I
VCE(sat)8 V I 10 10"
-10 -2.0 - -4 - -4 IUlHJt tw TIII..... C1CLUIIN THOUSANDS'
,
fhfe -10 -0.5 - 30 - 30 - KHz
Fig. 4 - Th.,.",.I-t,yellng TIlting chtIrt.
• hfe f = 1 KHz -10 -0.5 - 25 250 25 250
JIG COLLECTOR-TO-EMITTER 'IOLTAGE (Va' ... 4V
r-
* Ihfe l f = 1 MHz -10 -0.5 - 4 - 4 - 4
,
~~
•
'Sib
Cob
tp = 1s
VCS = 10 V
40
0
2.7
-
-
500
2.95
-
-
500
A
pF
r! , ".,.. ~
"i'e
~ r--: ~"~;-l- -
f = 1 MHz I I.I
• ReJC - 1.17 - 1.17 °C/W
i ·• 4
.. In accordance with JEDEC registration data.

• Pulsed; pulse duration = 200 "'s. duty factor = 1.5%.
b CAUTION: Sustaining voltage, VCEO(sus), MUST NOT be measured on a curve tracer.
II
-.... . . . .
4 II 4 II 4 II 4 II
Fig. 5 - Typical de bets eMrtlCteristies for both typss.
a:a COLLICTOIl-TO-IMITTiEll VOLTMI!: CVcIEI--4 'I

CAli TEMN.. ATUItE T ». tI-C
l!
•
1
!:
;: ...,
I
'1 ~ \.
1\
; ro
I• 4 I . -I.
-o.or -0.1, -I
COLLECTOR CURRENT tZc'-A
Fig. 6 _ Typical trtlnsfer eMrtlCtllristies for both ty".. Fig. 7 - Typicsl input eM",eteristics for both typ.... Fig. 8 - Typical gsin-bsndwidth product for both typss.
110 _________________________________________________________________
__ ~ ______________________________________________________________________ POWERTRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500, 40375

Features:
High-Speed, Epitaxial-Collector • Maximum-ar..-of-oparltlon curves for de and pulse operation
Silicon N-P-N Transistors • Rated for .afe operation in both forward- and revene-bias conditions
• High sustaining voltage
• Total,lturaud transition time 18ss than 1 /lS
For High-Speed Switching and Linear-Amplifier Applications for 2N3879. 2N5202, and 2N6500
RCA-2N3B7B, 2N3B79, 2N5202, and 2N6500. are epitaxial Typical applications for these transistors include: low-distor· TERMINAL DESIGNATIONS
silicon n·p-n transistors. The 2N3878 is an amplifier type tion power amplifiers. oscillators, switching regulators, series
'v
intended for audio-, ultrasonic·, and radio-frequency circuits. i;
regulators, converters, and inverters.
Types 2N3879, 2N5202, and 2N6500 are switching transistors
intended for use in high-current, high-speed switching circuits.
Type 40375 is a 2N3878 with a factorv-attached heat radiator; • Formerly RCA Dev, Tvpe NOI. TA2609, TA2509A, TA7286. and
TAB932. respectlvelv.
it is intended for printed circuit·board applications.
_-::..m:-_
ru
'MAXIMUM RATINGS, Absolute-Maximum Values:
2N3I78 JtCI-2'P'I.
4037& 2N3878 2N5202 2H8600
·COLLECTOR·TO·BASE VOLTAGE. VCBO 120 120 100 120 V
With eltternal base·to·emitter resistance (AeE! "50 n. VCERlsus! 65 90 75' 110' V
+ b
With base open. VCEO(susl 50' 75' 50 90' V
"'EMITTER·TO-BASE VOLTAGE.
"'CONTINUOUS COLLECTOR CURRENT
VEBO
Ie
7 7 7 V
A
e • I
e
JEDEC TC).8I wfth ....t RadIator
PEAK COLLECTOR CURRENT.
"'CONTINUOUS BASE CURRENT.
"'TRANSISTOR DISSIPATION.
I.
Ic'M 10
4
10
5
A
A
C
f •
4037&
At case temperature ITCI '" 2SoC 35 t2N387BI 36 35 35 W ,HEAT RADIATORI

At case temperatures above 250C Derate linearly at 0.2 wloe
At ambient temperature (TAl'" 2SoC . 5.8 (403751 w
For other conditions. See Figs. 1,2,3, and 5
"'TEMPERATURE RANGE:
Storage & operating (Junction) -86 to 200 °e
"'PIN TEMPERATURE:
s
1'32 tn. (0.8 mm) from seating plane tor 10 ma>e. 23. 23. 23. 23. °e
1s.l.llIItTED
... In accordance with JEDEC registration data format JS·6 RDF·2 12N38781; JS-6 AOF·1 12N3879. 2N6202, 2N6SOOJ.
~ ~ ~
EPFICTI" CAY TEll'. OR CAS! TEll'. ITEpf 01 TCI- IC !m-.16tD
Nate: Up emblent temperatura for d~ratlng 403715.

Fig. 2 - Dissipetion derating for e/l types.
10,
·........ ::"-':t-...
0
:-"':
~ I.
,
! ·~'.~
! • ••>4t.
~. t-t-
:~
"~
'e' Ifl
~ l"~J 'f.,,*,
0.1.
.'>a.«~
~ : [~J
t-
'J
~Ol · . .. . COLL£CTOR-TO~!MITTER
,
I
, , 100
Vc£oIMA.lCl-eOV
10
VOLTAGE: (VCEI-V
'1"~l?nltl
Fig. 3 . Maximum operating areas for 40375.
10 '
COI.I.ECTOR-TO-EMITTER VOI.TAGE (VCE)-V 0.5 1,0 I.D '.0
'AII~TOae:MITTtR VOLTAGE tv II! I-V
12CS-U7!SS
Fig. 4 • Typical input characteTlstlcs
Fig. 1· Maximum operating areas 'for 2N3878. for a/l types.
111
POWER TRANSISTORS
2N3878, 2N3879, 2N5202, 2N6500.40375

ELECTRICAL CHARACTER ISTICS,_At 9'- TlIf1Ipera.~urtI (TC) a 2ffJC unl... otherwllll flPllClfitJd:
VOLTAGE CURRENT 2N3878 2N387. 2NII202 2N8IOO
Vd. Ad. 40375
VCE VBE IC 18 Min. Ma•• Min. Mall. Min. Ma•• Min. Ma••
·
Collector Cutoff Current: 100 -1.5 '0
With base· emitter junction reverse- 110 0
biased '20 -1.5 25 25
· With bast-emitter iunction

rlMlf'.-bi.18d and T C '" 1SOoe
With ba" open

ICEV
'00
110
40
-'.5
0
0 5'
'0
10
mA
mA
ICEO 70 0
-6 '0
* Emitter 'Cl.ltoif Current leao -7 10 '0 25
mA
Collector-tn-Emitter Sustai'ning
Voltage VCEOfsusl 0.2 0 soU 7~ soa ~
With base open
V
With external base·to,emitter
resistance (RBEI = SO U VeER'sus) 0.2 0 65a 90a 75a 1108
'.2 4" 10' '00'

2 O.su 40' 200'
DC Forward-Current Transfer 2 3" '5' SO'
hFE 4" 100+
·~o1' .
Ratio S'
4" 20' 80
0.51> 50' 200' 40
• Collector·lo·Eminer 3" 0.3 1.5 V
. Saturation Voltage Vce tsatl
4" 0.4 1.2 12
• Base-ta-Emitter Voltage VSE 4" 2.5 V
* Base-la-Emitter Saturation
VSElsatl
3" 03 2.5
V
Voltage 4" 0.4
Collector'la-Base Output
Capacitance: CO" 175' '75 175 175 "F
If '" 1 MHz, VCB " 10 VI
Second B·reakdown Colle(:tor Curren I
With base forward-blased and IS,b 40 750 SOO 400 400 lilA
1-s nonrepetltlYe pulse
With base reverse-biased and
ABE'" 50 n, Vas'" -4 V ES/I/ mJ
At L '" 50 j.lH A.'
At L '" 12S,uH 0.5
• Magnitude of Common Emitter,
Smalf..Slgnal, Short·Circult.
Forward-Current Transfer h,l 10 0.5
Ratio:1f " 10 MHz)
• Common-Emitter, Small,SIgnal,
Shon-Circuit. Forward-Current h" 30 0.' 40
Transfer Ratio:1f '" 1 kHzl
Thermal Resistance: 2N3j':

Junction-to-case RO JC
°C/W
40375
Junction-to-ambient ROJA
130
• In accordance with JEOEC registration data format J$6 AOF,.2 b Pulsed, pulse dUration" 300 ,.s, duty factor 2 %. <
12N3878J; JS-6 RDF·' (2N3879. 2N6202, 2N6600J .• c ES/b is defined at the anergy at which second breakdown occurs
a CAUTION: Sustaining voltages VCEOtsus)· and VCEA~'U'~ MUST under ,pacified reversiHJias conditions. ES/b" 112LI2 where L is a
NOT be measured on I curve tracer. . series load or leakage indUctance and I is the 13Nk collector current.
TRANSITION AND STORAGE-TIME CHARACT~RISTICS FOR SWITCHING TYPES~At 0111 Temperature ITC) - 2ffJC:
-.
VOLTAGE CURRENT
CHARACTERISTIC SYMBOL Vole Ad. 2N.7. 2N5202 21\0_ UNITS
Vee Ie
la Max. Min, Ma•. Min. I\Iox.
Saturated Switching 30 3 0.3a 40

Time
Delay time '. 30
30
30
4
4,
0.4a
O.aa
0.3a
40
40
400
Rise time 30 ~ 0,4' 400
" 30 4 0.11" 400
30 3 0.3" no
1000
Storage time
'. 30
30
0.4'
O.Sa
800
'200
30 0.3" 500
Fall time 'f 30 0,4' 400
30 0.11' 400
• In accordance with JEDEC registration data format IJS..e, AO~·II a 181.182
112
2N3878, 2N3879, 2N5202, 2N6500, 40375
120
f---. - -. - r- r-.--+----j-+-t-1
~ I00f--+--i-++t-·-t;......,....,.<t+-·+--+-+-H
t 001---
,of--- 7' -~:. -.--+.-+-l-t----.+-I';\-'+-!--H

.0r-t-- . --,,- -~
'"I !?LI-- -
u zo!---+~_+~-+-_+-+++-+__+-+-H
~ !---~-~H---·-
I-
Z " II 80 I ~ 6 II I 4 6 8 10
"'0: COLLECTOR CURRENT (I,cl-A

!§
U
0: Fig. 6· Typical gain·bandwidth product
o
I-
U for all types.
"'
..J
..J
o
U
!
2 ::--~'"'~:::rT' Ii
~ .- .,.' {'.r"
~
~
'"
100
!\ i
Pi \l
CASE TEMPERATURE (TCI'25QC
"
~ '0
I
I.".J ~
COLLECTOR-TQ-EMITTER VOLTAGE(VCE)-V
I ''!-..- 1.1 I
1,. ,,~ ,.
92C5- 23756
g
Fig. 5· Maximum operating areas for 2N3879, 2N5202, and 2N6500.
0
, , 01
, , ,
1
COLLECTOR CURRENT (IC)-A
Fig. 7· Typical dc beta characteristics for

2N6500.
Ifil '
~ 2
11 1
0.' 1.0 ZD
COLLECTOR-TO-EMITTER VOLTAGE ("eEl-V COLLECTOR-TO-EMITTER VOLTAGE {VeEI-V
6ASE-TO- EMITTER VOlTAGE (YBEI-V
Fig. 8· Typical transfer characteristIcs Fig. 9 . Typical output characteristics for Fig. 10 - Typical output characteristics for
for all types. 2N3878, 2N3879, 2N5202 and 2N6500.
40375.
"""""nu.. " ",," ,
o
COLLECTOR CURRENT (ICI-A
COLLECTOR CURRENT (lc1-A COLLECTOR CURRENT (Icl-A
Fig. ii- TYPIcal saturation,voltage
characteristics for 2N3878, Fig. 12 . Typical saturation·voltage Fig. 13· Typical saturation-voltage
and 2N3879. characteristics for 2N5202. characteristics for 2N6500.
113
POWERTAANSISTORS ___________________________________________________________________________
2N3878, 2N3879, 2N5202, 2N6500, 4305

CASE TEMPERATURE ITe) • 2S·C
I • • I •
caU.ECTOR CUltMHT IIC)-A COLLECTOR CURReNT (Ic::I-A saCS-IUI7 COLLECTOR CURRl:NT ':td-A
Fig. 14 . Typical turn·on time for Fig. 15 - Typical storage time for Fig. 16 - Typical fall time for 2N3879,
2N3879,2N5202,and 2N3879, 2N5202, and 2N5202, and 2N6500.
2N6500. 2N6500.
114 _______________________________________________________________
2N4036, 2N4037, 2N4314,40391, 40394, 41503

Medium-Power Silicon P-N-P Planar Transistors
Features:
General:Purpose Typesfor Industrial and Commercial Applications
2N4036 1
are p-n-p \ 2N2102
These RCA types are double-diffused, Type 41503 is suitable for low-power, • 2N4037! complements of l2N3053
epitaxial-planar, silicon p-n-p transistors; low-cost industrial and audio uses, and • Gain-bandwidth product
they differ in breakdown-voltage ratings, may be employed as the p-n-p comple- (tTl = 60 MHz min.
leakage-current, and saturation character- ment to RCA n-p-n type 41502. • High breakdown voltages
istics. • Maximum-area-of-operation curves
The 2N4036, 2N4037, 2N4314, 40391, • Planar construction provides low
and 40394 transistors are intended for a Types 2N4036, 2N4037, 2N4314, and noise and low leakage
wide variety of small-signal medium-power 41503 are supplied in the JEDEC TO-39 • Low saturation voltages
applications. With a minimum gain-band- hermetic package. The 40391 is a 2N4037 • High pulsed beta at high collector
width product (fTl of 60 MHz, these with a factory attached heat radiator, current
devices provide useful gain at high fre- intended for printed-circuit-board appli- • Fast switching (2N4036l
quencies. In addition, the 2N4036 is use- cations. Type 40394 is a 2N4037 with a TERMINAL DESIGNATIONS
ful in high-speed saturated switching ap- factory-attached diamond-shaped mount-

plications.
MAXIMUM RATINGS. Absolute Maximum Values:

"COLLECTOR·TO·SASE VOLTAGE ...
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE'
Veso'
ing flange.
2N4036
-90
2N4031
40391, 40394
-60
2N4314
-90
41503
V
,fj".,o 92CS-27512
JEDECTO-39
2N4036, 2N4037
2N4314,41503
With 1.5 volts !VBE) of reverse bias ... '" VCEV(sus) -85 -60 -S5 V C
E~
With external base-ta-emitter resistance ...
(RSE)" 200n '" VCER!sus) -85 -60 -S5 V
With base open ..... VCEO!sus) -65 -40 -65 -30 V
~DEC
"EMITTER·TO·SASE VOLTAGE ..... . ... ,VESO -7 -7 -7 -4 V
"COLLECTOR CURRENT ......•...•... IC -1.0 -1.0 -1.0 -1 A
"SASE CURRENT IS -0.5 -0.5 -0.5 -0.5
"TRANSISTOR DISSIPATION, PT
TO-39 with Flange
At case temperatures upto 25°C 7(2N4037) W 40394
7(40394) w
At free-air temperatures up to 25°C 3.5(40391) w
1 (2N4037. 40394) W
At temperatures above 25°C Derate linearly to 200oC - - - - b
"'TEMPERATURE RANGE:
Storage & Operating (Junction) -65 to 200 DC e
"'LEAD TEMPERATURE (During soldering):
At distance;;r. 1/16 in. (1.58mm)
from seating plane for 10 s max. 230 DC
C
f 8 JEDEC TO-39 with Heat Radiator
• In accordance with JEOEC regi~ration data format (JS·6 RDF·1 2N4036; JS·9 ROF·2 2N4037. 2N4314). (HEAT RADIATORI 40391
i COlLECTOR-fO-EMITTER VOLTAGE CVc:E:)--IOV
~ 120~r- \!P:;
ooH-HI-f+-+-H+11H-+H+-+-t-l ~
CIOO'~~~~~~~~-+-+4+~+-+-~
II
100 ,JtI' ·IT ,_ZO"
~ -f- ,,~.'
i 80--~~'~~~+-+-~~~~~~~~
a, '''';;'
2 4'"-10 Z ""I e 4
i 20,~*=~~~~~tt=t=t++t=+=~~
-01 -I -100 -600 -01 -I -10 -100 -eoo ""'
-1.0 I 4 II
-10 ." "
-100 . " -1,000
••
COLLECTOR CURRENT IICI-ITIA COLLECTOR CURR!HT IICI-ITIA
COLLECTOR CURRENT (Icl-mA ,aLI-Ina
Fig. 1-Typical dc-beta characteristics for Fig. 2- Typical dc-beta characteristic for Fig.3- Typical dc beta characteristics
2N4036, 2N4037 and 2N4314. 41503. for 2N4037 and 2N4314.
__________________________ ~--------------------------------------115
POWER TRANSISTORS
2N4036,2N4037,2N4314 i 40391,40394,41503
ELECTRICAL CHARACTERISTICS, at CaIe Tem".ra"',. (TO- 25"C Unl... OtherwiseSptlCified COLLECTOR-TO-BASE VOL.TAGE 1VC81.~
1"" -40'1
I '0
TEST CONDITIONS LIMITS il
~I I ~ -20'1
2N4037 ~I
CHARACTERISTIC SYMBOL 40391 UNITS i 10'
z
,
~
2N4038 2N4314 41503
40394 u .,
Vee " to
~.-
"cE'IIaE IC MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
~u ro-3
COllector Cutoff Current:
With emitter open
ICBO
-15
-90
g.0 4 r !
-60
8 16~ L
With base open
reverse biase",d:--:-==_-i
ICEO -30
-85 1.5 - -lOll" - mA

,-'
'00
r
'0 0 . '00
I 150
ICEX JUNCTION TEMPERATURE (TJI-"C
TC=15OOC 30 1.5 - -0.1·
Emitter Cutoff Current

o - -0.1· - mA Fig.4- Typical collector-cutoff current vs.
lEBO 0--0.02- -1· -1· IlA junction temperature for 2N4036.
Coliector·to·Base Breakdown
Voltage (I E • 0)
-9,- 1 -90 - -sa- ..ga- v
Emitter-to-Base Breakdown COL.LECTOR-lo-EMITTER VOLTAGE (VCEI--IO v
V(BR)EBO -7 --7 -7 -4 V FREQUENCY • 20 Mt:!z r--
Vol_ (lE--o.lmA)
AMBIENT ·TEMPERATURE tTA '·2'·C
Collector-to-EmittaT
Sustaining Voltage: ~
reverse biased
VCEvl.uol 1.5 -100 -8S· -60' -85- V
~i ,/
I~
emitter resistance
IRSE)<2001l
VCER~u,) -100 -85' -60' -85" V ~ffi
;:
4
L
"" J:"..,
1'\
-30 1-30" ~~ 2
With base open V
V
~
VCEOlsuol -100 -85' -40" -85"
Voltage liB - ;15mA)
Base-to-Emitter Voltage
VCEI ..,)
V8E -10
-150
-150
-
-
-0.65
-1.1
- -1.4
-15- -
-1.4
-1.5- -
-1.5
-2.5
V
V
-'0
... .
-roo
COLLECTOR CURRENT IIcl- III"
I ~.ooo
- Base-to-Emitter
Voltage lis = -)5mA) VSElsa,) -150 - -1.4 V Fig.5-Typical small'signal beta charac-
-2 -150 20 200 - teristics for all types.
-10 -0.1 20
- DC Forward-Current
hFE -10 -1.0 15 15
Transfer Ratio _l50 b
-10 40 140 50 250 50 250 20
-10 _500b 20
Common-Emitter. Small-Signal
Short-Circuit. Forward-
hfe -10 -50
(atl • 20 MHz)
- Magnitude of Common·Emitter.
Small-Signal. Short-Circuit.
Forward·Current Transfer
Ratio (at f .. 20 MHz)
Ih'el
-10 -50 10 10
Collector· Base Capacitance

(atl = 1 MH2, IE = 0) Coo -10 30 - aae 3a- 30 pF ····.···L·
Input Capacitance Cib 0.5 90 90 90 90 DF
...... '" .::: :::: :::: E;: ...
- Sat. Switching TimeC -1.0 -2.0 -3.0 -4.0 -&.0 -6.0
Rise time -30 -150 70 Vee. (-otl-V
Storage time "'. -30 -150 600
COL.L.ECTOR-TO-EMITTER SATURATION VOL.TAGE,
92LS-.2eeRI·
Fall time -30 -150 100
Turn-on time "'on -30 -150 110
~s Fig. 6- Typical saturation-voltage charac-
teristics for 2N4036.
Turn-off time 'off -30 -150 700
Thermal Resistance:
25" 26 (max.) 25 25
Junction-to-Case R8JC 2N4037 &
40394
165 (max.)
0c/w
165 2N4037 165 - 165
Junction-to-Ambient 40394
R8JA
50 (max.)
40391
-CAUTION: The sustaining voltages VCEO(sus). VCER(sus). and VCEV{~US) MUST NOT be measured on a curve tracer.
b Pulsed, pulse duration"" 300 JlS, duty factor <; 2%.
-In accordance with JEOEC registration data format (J8-& RDF-1 2N4036; JS..9 RDF-2 2N4037. 2N4314).
'lSI -IS2 - 16 mA
etLS-12S:i"1
Fig. 7- Typical transter characteristics

for 2N4037 and 2N4314.
116 ______________________~------------------------------------_
2N4036, 2N4037, 2N4314, 40391, 40394, 41503

AMBIENT TEMPERATURECT,o, )·~·C L:: I:::: :j~:L I:::: j;L
r."!~· •.• 1 I.· L..: rJ~
jii":··;:r .•.•..
~I •• ·
... ,~ ...
::: ::: ~4: ;
.••. ·.,•••. ·U •....
'k
~ ~URRE~ (Ie' J~A '-.-f,--.-f,--.-I=o
-8 -20
COlLECTQR-TO-EMITTER VOLTAGE ('ICE 1- v
Fig. 10- Typicallarge·signal output

characteristics for 2N4037,
2N4314, 40391, and 40394.
!CS-24056
Fig.8-Maximum operating areas for 41503.
COlLECTOR-TO-EMITTER VOLTAGE (VeE)-v
CASE TEMPERATURE (TC) = 25°C

(CURVES MUST BE DERATED LINEARLY
",L"J, Fig. 11- Typical small·signal output
~"
WITH INCREASE IN TEMPERATURE) characteristics for 2N4037,
I I I
.1 MULTIPLIER
15O /4S
J r- 2N4314, 40391, and 40394.
IC MAX. (CONTINUOUS)
PULSED OPERATION * l~
I Ie' 10 I8 r • 10 182 r-t-
~~ 9.3- AMBIENT TEMPERATURE (TAJ.ZS·C
I
" '\ ~ ~
" ~I~+
°0 00
/00 1,_ I.OO~
:.....
« 6 irotG
I ~ /~ r\.~~ 5.0 .~ ~ ~'s)
- u 4
0" ~ , I -......,"1> I . . . t--
-.... '"
O~~l~ .
I 100
3.0 TIME 'I,!.--
f- ltiS f
z ~~
I I
LU
i O~ ~TIMElttJ
It: 2.0
It: 2 Di( .. )o
~
11"'' £70"
.
:>
'-'
It:
0 I
LO_
-'0 -100
COLLECTOR CURRENT (I:cl-mA
-1,000
92LS-12C1F11
""" -0.1
u
Fig. 12- Typical saturated switching times
LU
..J 8
VCEO MAX, = 40V _ I
for 2N4036.
..J
0 (2N4037) ---=+f
'-' 6
I I I.
4
VCEO MAX. = 65V !
(2N4036 a 2N4314)
I
I I I I
* FOR SINllLE
NONREPETITIVE
I
2
PULSE"
I
-0.01
_I 4 6
II
8_ 10
I
I
~
4 8-100
COLLECTOR-TO-EMITTER VOLTAGE (VcEl-V 92CS-17443

Fig.9-Maximum operating areas for 2N4036, 2N4037, and 2N4314.
_________________________________________________________ 117
POWER TRANSISTORS
2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314

Silicon N-P-N and P-N-P Medium-Power Transistors
General-Purpose Types for Switching Applications
Features:
RCA-2N4231A, 2N4232A, and 2N4233A complements to 2N4231 A, 2N4232A, and
are multiple-epitaxial n-p--n transistors. The 2N4233A. These types are supplied in steel • 2N4231A-2N4233A complements of
RCA-2N6312, 2N6313, and 2N6314 are JEDEC TO-213MA hermetic packages. 2N6312-2N6314
multiple-epitaxial p-n-p transistors. They are • Low saturation voltages
• Maximum-safe-area-of-operation cur.as
• Thermal-cycle ratings
MAXIMUM RATINGS, Absolute-Maximum Values: • High gain at high current
N-P·N 2N4231A 2N4232A 2N4233A
P-N-P 2N6312+
2N6313+ 2N6314+
40 60
'0
• VCBO' 80 V C
VCEolsusl 40 60 80 V
• V EBO ' 5 5 V
.• IC 12N4231 A, 2N4232A, 2N4233AI . 3 A
12N6312, 2N6313, 2N63141 . A
• ICM (Registered for 2N6312, 13, 14 onlvl 10 A
• IB (2N4231A,2N4233A,2N4233AI. 1 A
(2N6312, 2N6313, 2N63141 2 A lICI·mtl
• PT TC ';;;25 0 C . . . . 75 W
TC >25 0 C derate linearly 0.43 wtc JEDEC TO-213MA
• T J' T stg (2N4231 A, 2N4232A, 2N4233AI -55 to 200 °c
(2N6312, 2N6313, 2N63141 . . '. -65 to 200 °c
• T l (2N6312, 2N6313, 2N6314 onlvl
At distances ~ 1/32 in. (0.8 mm) from
seating plane for 10 s max. 235 °c
• For p~n~p devices, ~lOltage and current values are negative.
.
it 100
~
~ ·
i ·
~
• t'--~
2i
~ t~l't..,~
tot.. """
i•
l,lo
".~~~
'.!~~'Ir.c . . . . 14>",•."...
10
10'
. . .. "
. ,. .
Fig. 2 - Thermal-cycling rating chart for all types .
...
~
-. COLLECTOR-TO- EMITTER VOLTAGE ("fE)o4 V
j
2
i rr-- I'--.~.1 ..
,··
ffi 100
I
~
•
• I"~.. r--
r--~",
~
~
('1.1.",
! ~8~ ~
VCEO (MAXI-SO V
~
2 4
COLLECTOR-TO-EMITTER VOLTAGEIVCEI-V
g,.
••• 0.1 • • I
..
COLLECTOR CURRENT CI C I-A
•
'ICI-IOI.,.
••
92CM-30378 Fig. 3 - Typical de beta characteristics for
2N4231A, 2N4232A, and 2N4233A.
Fig. 1 - Maximum operating areas for all types••

118 ___________________________________________________________________
2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tcl = 25"C ...
~
-. COL.L.ICTOR- 'fOo£M1"ER VOiTAGj I Vcr:11I4 V
i ~r-~I
unless otherwise sPecified
TEST CONDITIONS. LIMITS U'
N ""~f)':
im: .........r-
25,,(
CHARACTERISTIC VOLTAGE CURRENT 2N4231A 2N4232A 2N4233A
Vdc Adc 2N6312t 2N6313. 2N6314. I
T ~
J ~J,,~.
-ss'"
r-..... ....
.. ICBO
VCE VeE
40a
60a
IC Ie Min. Max. Min. Max. Min. Max.
-
-
50
-
-
-
-
50.
-
--
-
-
S
I ~ "-
.
80a -
-
- -
-
-
- -
50
-
p.A
II.• ~~
..
'CEX
RBE = lOOn
40
60
80
-1.5
-1.5
-1.5
-
-
100
-
-
-
-
100
-
- -
100
~
. •• -01
, .•• -I • ••
RBE= lOon, 40 -1.5 - 1 - - - - COLLECTOR CURRENTIIC)-A ,aCI-IONG
TC=150°C 60 -1.5 'i; - - 1 - - Fig_ 4 - Typicsl de bets chsracteri.tic. for

BO -1.5 - - - - - 1 mA
2N6312,2N6313.snd2N6314.
. 30 0 - 1 - - - -
'CEO 50
70
0
0
-
-
-
-
-
- .,..
1 -
-
-
1
!: COLLlCTOIFfO-EfIIITTD VO\.T" IVcI;l. 4V
CAllE TaUllUTUItE eTc ,.we -I--+-I-~
.. -5 - 0.5 - 0.5 - 0.5

. It :~~-1-+44--4--1-+44--+--4-+~
'EBO
hFE 2 30 10 - 10 - ~g -
2N4231A,2N4232A,
2N4233A
2N6312,2N6313,
2
2
4
4
1.5c
0.5c
5c
3c
25
40
4
10
100
'-
-
-
25
40
4
10
100
- 40 -
- 4
- 10 -
100
- I:~y,,1-+-:l...l--Ft==F-....,..d::+I--+--+-++I
5
2N6314 4 t.5 e 25 100 25 100 25 100 3 .~~-4-+~--4--4-+44--+--4-+~
4 0.5e 40 - 40 - 40 -
.. VBE
2N4231A,2N4232A, 0.01 10
2N4233A 2 1.5e - 1.4 - 1.4 - 1.4

Fig. 5 - Typicsl gsin-bendwidth product for
tlICI'H41'e
2N6312,2N6313,
2N6314 4 1.5e - 1.4 - 1.4 - 1.4 all typal••
. VCE(sat) 5 ..
2N4231A,2N4232A, JC 0.3 - 2 - 2 - 2
V
CASE TEMPERATURE eTc ·2
2N4233A 1.5c 0.15 - 0.7 - 0.7 - 0.7 ~~.,~~~~-H~~--~~~~--~~
2N6312,2N6313, 5c 1.25
3c 0.3
-
-
4
2
-
-
4
2
-
-
4
2 ft'll ·,. . . . b-H"1ot
2N6314
1.5c 0.15 - 0.7 - 0.7 - 0.7 to!
. VCEO(sus)b O.lc 0 40 - 60 - 80 - 5~:"*-+--4--R>1~~
. Ihfel f-l MHz 10 0.5 4 - 4 - 4 - Ii .1--I--+-H-l---4''''''-d-+~
. hfe f=1 kHz 10 0.5 20 - 20 - 20 - U .1--t---t-+1I+--f-
..
fT
Cobo f=O.1 MHz
10 0.5 4 - 4 - 4 - MHz
II .I--t--I-+l+-+--H+t-
2N4231 A, 2N4233A, 0.1 ... • I .. • '10
2N4233A loa - 200 - 200 - 200 pF REvERSE VOLTAGE tYR)-V
Fig. 6 - Typical common-be.., Input or output
llel-IOMiI
2N6312,2N6313,
2N6314 loa - 300 - 300 - 300 capacitance chst'BCteristl'cs 1$ a function
of reve,.. voltags for sll type•.•
- 2.3 - 2.3 - 2.3 ·CIW
ROJC
• In accordance with JEDEC registration data format.
.. COLLECTOR SUPPL'I'YOLTAGI! (Vee'- 30v
CASE TEMPERATURE (Te,-e-c
• For p-n-p devices, voltage and current values are negative. 181-182-1 110
• VCB value.
" TiiR··""'t... "OFF}
b CAUTION: Sustaining voltages VCEO(SUS) MUST NOTbe mea.ured on a curve trecer.
e Pulsed, pulse duration = 3001.1', duty factor = I.B".
.
02
o· ,
COlL.ECTOR CURRINT (I C I-A
Fig. 7 - Typicsl .stursted .witchlng charscterl.tic.

for 2N4231A. 2N4232A, and 2N4233A.
.For p-n-p devices, voltage and current values are negative.
_________________________________________________________________ 119
POWER TRANSISTORS
2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314

COU.ECTOA SUPPLY YOlTAGE lVCCI--aoV
CASE TEMPERATURE 1Tel-25-'
12 ~1I·II!12·lc/lO
10
•
r'
~
lio 0.4
0.2
-I
-.
COu..ECTOA CURRENT (le)-A
-. -4
"~!PMI
MSI"TO-EMITTER VOL.TAGE IVIE'-V
"1.1-311""
COLI.!CTOft~TO·IEMITTER \oQLTAIE 111'«1- II'
... ·11""
Fig. 8 - Typical SBturatad ''''itching characteri.tic. Fig. 9 - Typical input characteristics for Fig. 10 - Typicaloutputcharacteri.tic.'for
for 2N6312, 2N6313, and 2N6314. all typ.s.• all typ ••.•
,
8A$E-TO-EMllTER VOI..TAGE ("8[1- V
9ZLS-'5291it1
Fig. 11 - Typica' transfer chll;act.ristics for

all types.•
120 _______________________________________________________________
POWER TRANSISTORS
2N4904,2N4905,2N4906
Silicon P-N-P Epitaxial-Base High-Power Trans.istors
• Meximum safe-area-of-operation curves
The RCA-2N4904, 2N4905 and 2N4906 are and feature a diSSipation capability of 87.5 • Hermetically sealed JEDEC TO-3/TO-204MA
epitaxial-base silicon p-n-p transistors fea- watts at case temperatures up to 25 0 C. package
turing high-gain at high current. They may
They differ in voltage ratings and in the • High gain at high current
be used as complements to the 2N4913, currents at which the parameters are con- • Thermal-cycling rating curve
2N4914 and 2N4915 n-p-n types, respec- trolled. All are supplied in the steel JEDEC
tively. These devices are intended for medium
TO-204MA hermetic package.
speed switching and amplifier applications
Applications:
• Series and shunt regu lators
2N4904 2N4905 2N4906 • Power-switching circuits
* vCEO ....•....••..••••.•••..••••.. -40 -60 -80 v • Solenoid drivers
* VCBO ••..•....••...•......•.••..•. -40 -60 -80 v TERMINAL DESIGNATIONS
* VEBO •.••.....••...•...••..•.••••• -5 -5 -5 V
"IC ........••....................... -5 -5 -5 A
*IB ...•....••...••...•.•..•.....•... -1 -1 -1 A
* PT
AtTC 0;;; 25°C ................. . 87.5 87.5 87.5
At TC > 25°C ...•.. derate linearly 0.5
_ _ _ -65 to 200 _ _ _ __
*TJ , Tstg ..................•.....•..•
• TLat 1/16 ± 1/32 in. (1.58 ± 0.8 mm)
from case for 10 s .••••••••.••••••
_ _ _ _ _ 235 _ _ _ _ _ _ °c JEDEC TO-204MA
10.
··
t,~ ~-
..
1"- 100
1,\ \ l~I\-
c
.L
u
", l~l\ !•
~
2 ~
i ~
~ ".
, ,'"
~ • ".....,
I '>
'r-- r--
· ~
~
~ ".~
~ ;;; r-- I -
LIMIT FOR
s i i\ 1\ \ ~"~
4
2N~904 _
8 ffi -.' t-
~ ~. . t -
2N4905 2r-
~
2
2N4906 -
I
-~
.". '"~
... , ~~... ..
ANalUIT TEMPERATURE (Tc )-25-C
0.1
, • •• , • •• ,~ l)t
10
COLLECTOR EMITTER VOLTACiE {VCE)-Y
100
92CS.30176
10
2 "10 " 2 , 2
I 102 10'
NUNIER OF THEJtIIALCYCU:S liN THOUSANDS)
Fig. 1 - Maximum operaring areal for all rypes. 'I!CS-I.570".
Fig_ 2 - Th/ll'mal-cyC/lng rstlng chart.
25 COLLECTOR-lO-EMITTER VOLTAGE (VC£)--4 V

CASE T!MPERATURE n 1. 25-C
-0.01 -0.1
4
COLLECTOR CURRENT Itel-A

••
-I
4' •-10
10
-~~ -0.1
I .. II
~
COLLECTOR CUR"ENT (Icl-A
.
-10 BASE-TO-EMITTER VOLTAGE IVaEl- V
'leS-tIlS7.
Fig. 5 - Typicel trsn.fer characteristic.

Fig. 3 - Typicel gain-bandwidrh product Fig. 4 _. Typical dc beta chafBcterilticl
for all typal.
for all rypes. for all rypes.
___________________________________________________________ 121
POWER TRANSISTORS
2N4904, 2N4905, 2N4906

ELECTRICAL CliARACTERISTICS. At ea.. Tempereture TC. 25°C
Unl_ Otherwisl Specified
CHARAC· Voltage Current
TERISTIC Vdc
2N4904 2N4905 2N4906 UNITS
Adc
VCE VaE IC la Min . Max. Min. Max. Min. Max.
.. ICEX -40 1.5 - - - -<l.1 - - - -
-60 .1.5 - - - - - --0.1 -
-80 1.5 - - - - - - - -<l.1
rnA
TC=150o C -4'p 1.5 - - - -2 - - - -
-60 1.5 - - - - - - -2 -
. -80 1.5 - - - - - - - -2
ICEO -40 - - 0 - ..,.1 - - - -
-60 - - 0 - - - - -1 - rnA
-80 - - 0 - - -- - -- - -1
Icao 40c - - - - -0.1 -
60C - - - - - - -<l.1 - - rnA
IE = 0
80C - -0 - - - - - - -0.1
.* IEao - 5 - - -1 - -1 - -1 rnA
VCEO(sus)b - - -0.2 0 -40 - -60 - -80 - V
. hFE a
.O!
-2 -
-2.5
-5
25 100
- 7 - 7 - 7
25 100 25 100
-
.. VaEa -2 - -2.5 - - -1.4 - -1.4 - -1.4 V
. VCE(sat)a - -2.5 -U •.lO - -1.5
·1 ·1 ·1
V
- - -5 -1 - - -1.5 - -1.5
.. fT f=l MHz -10 - -1 -' 4 - 4 - 4 - MHz
.. hfe f=l kHz -10 - -0.5 -- 40 - 40 - 40 -
. I H8JC O! O! 2 ul,;/W
.. In accordance wIth JEDEC regIstratIon data.

a Pulsed: pul .. duration = 300 I/oS, duty factor = 2%.
b CAUTION: Sustaining voltage, VCEOlsusl, MUST NOT be measured on a curve tracer.
eV CB '
COLLECTOR-TO-EMITTER VOL.TAGE IYCEI-Y

use:·TO-EMrTTIR VOLTAOlIVaEH HCI-1H82
92CS-29006
Fig. 6 - Typical input chsracrerlnic. Fig. 7 - Typical output chartJcta,i.tic,

fo, all typo, for .11 types.
122 ____________________________________________________----------_____
POWER TRANSISTORS
2N4913, 2N4914, 2N4915

Silicon N·P·N Epitaxial.Base High.Power Transistors
Features:
Rugged, Broadly Applicable Devices
The RCA-2N4913. 2N4914. and 2N4915 capability of 87.5 watts at case temperature • Maximum safe-areas-of-operation curves
are epitaxial-base silicon n-p-n transistors up to 25°C_ • Hermetically iealed JEDEC TO-3/TO-204MA
package
featuring high-gain at high current. They They differ in voltage ratings and in the
may be used as complements to the 2N4904. • High gain at high current
currents at which the parameters are con- • Thermal-cycling rating curve
2N4905. and 2N4906 p-n-p types respec- trolled. All are supplied in the steel JEDEC
tively. These devices are intended for medi-
TO-204MA hermetic package. Applications:
um-speed switching and feature a dissipation
MAXIMUM RATINGS, Absolute-Maximum Values: 2N4913 2N4914 2N4915 • Power-switching circuits
o v CEO . 40 60 80 v • Solenoid drivers
o VCBO . 40 60 80 v
• vEBO· 5 5 5 V
o IC' 5 5 5 A
o lB' 1 A
o ~
At TC "250C 87.5 87.5 87.5 w
At TC > 25°C derate linearly ----0.5--- wi"c
• TL
At 1116 in. ± 1/32 in. 11.58 mm 0.8 mm)
from case for 10 • . ---235 TERMINAL DESIGNATIONS
• TJ,Tng . - - -65 to 200 - - -
• In accordanca with JEDEC registration data.
10,
:q,+-
··
"- "- I\~'
"'."<0
f
~ 2
~~
~ l'\
II
a
~ ·•
.'
LlNIT FOR
JEDEC TO-204MA
~
aN4913
2N'4914- f---.
, 2N4915- r-
1.~5.J,
0.1
2 4 .•
AMBIENT TEMPERATURE (T c
COLLECTOR EMITTER VOLTAGE

10
C VCE)-
4
v
I I
92CS-30177
100
Fig. 1 - Maximum ope,ating areas fa, all types.
.
I COLLECTOft-TO-£MITTER VOLTAGE (VeE). 4 V
100 COIJ.ICl'OIt-TO-DfiTEII YOLTAIECYcr)- .v 7 CASE TEMPERATURE (TC) • 2e-e
l- i,,
• I 1"'- i ... ta! TJ.i!J.,TcI!~" • L--- ~I--
~ 1\ ",-""
c~1
I.::-:cf'-. :t /1-'" 1\
~
;;
~
4r-- r--
~~
I-
i
'1- r-- ...
u
\
\ \
"..
.~
~c.
,
1100eo'
~
eo
.. I--"
-40ec:
........
~
r0:-"
I·,. 1/ \
I I• 1\ \ ... I- 20
~
z
\
. 4 • . 4 •• . 4 •• .
,,~ \~ ~
.. ~
., .
I
~. ~
10
0
10 <> <>
• • 4 4 ••
0.01
2 , .10.1
2 4
I • 4
10
I 10 102 10! 0.01 0.1 10
COI..LECTOR CURRENT (Ie 1-A COLLECTOR CURRENT (XcI-A
IUllBEIl Off TMEItMN,. C.,CLES UN THOUSANDS) .I:Ctl-l,,70III,
92CS-2SOO4
Fig. 2 - Thllf'mal-<:ycllng rating chllrt. Fig. 4 - Typical gain bandwidth product fa, all types_
Fig. 3 - Typical de hilts chBractJlristics fa, all types _
_________________________________________________________________ 123
POWER TRANSISTORS
2N4913, 2N4914, 2N4915

ELECTRICAL CHARACTERISTICS, at CaM Temperature TC • 25°C Unl_ Otherwi.. Specified

VOLTAGE CURRENl
CHARACTERISTI( Vdc Adc 2N4913 2N4914 2N4915 UNITS
• ICEX 40 -1.5 - -- - 0.1 - - - -

60 -1.5 - - - - 0.1 - -
80 -1.5 - - - - - - - 0.1 mA
TC= 150°C 40 -1.5 - - - 2 - - - -
60 -1.5 - - - - - 2 - -
80 -1.5 - - - - - - - 2
• ICEO 40 - - 0 - 1 - - - -
60 - - 0 - - - 1 - - mA
80 - - 0 - - - - - 1
ICBO 40c - - - - 1 - - - -
60C - - - - - - 1 - - mA
80c - - - - - - - - 1
• lEBO - 5 - - - 1 - 1 - 1 mA
- - - - -
..* "CEO(susl b 0.2 0 40 60 80 V
. hFEa 2 - 2.5 - 25 100 25 100 25 100

2 - 5 - 7 - 7 - 7 -
* VBEa 2 - 2.5 - - 1.4 - 1.4 - 1.4 V
• VCE(satl a - - 2.5 0.25 - 0.75 - 0.75 - 0.75 V

- - 5 1 - 1.5 - 1.5 - 1.5
• fT f = 1 MHz 10 - 1 - 4 - 4 - 4 - MHz
• hfe f = 1 kHz 10 - 0.5 - 20 - 20 - 20 -

RlljC - - - - - 2 - 2 - 2 °CIW
• In accordance with JEOEC registration data.

a Pulsed; pulse duration = 300 "', Duty facto' = 2%.
bCAUTION: Sustaining voltage, BVCEO(sus), MUST NOT BE measured on a curve tracer.
C VCB
CASE TEMPER.T.... ,•••• ·c :
I~
V COLLECTOR-TO-EMITTER VOLTAGE CVCE)- Ii BASE-TO-EMITTER VOLTAGE (VaE)-V
92CS·2900~ 92CS-2SOO6 92CS-29007
Fig. 5 - Typical input characteristics for all types. Fig. 6 - Typical output characteristics for all types. Fig. 7 - Typical transfer characteristics for all types.
124 ___________________________________________________________________
POWER TRANSISTORS
2N5038,2N5039,2N6354,2N6496
High-Current, High-Power, High-Speed Silicon N-P-N

Power Transistors Features:
Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications • Maximum operating area curves for dc
and pulse operation
RCA-2N5038. 2N5039. 2N6354, and switching speeds make these devices es- • IS/b-limit line beginning at 2S V
2N6496 are epitaxial silicon n-p-n power pecially suited for switching-control am- • High collector current ratings
plifiers, power gates, switching regulators, • High-dissipation capability
transistors. They differ in breakdown-
converters, and inverters. Other recom- • Fast switching speeds -
voltage ratings, leakage-current, and dc-
Measured at: SA. SA, 10A,12A
beta values mended· applications include dc-rf ampli-
fiers and power oscillators. These transis- levels
tors are supplied in the JEDEC TO-3
The high current-handling capability of
package. TERMINAL DESIGNATIONS
these transistors in conjunction with fast
MAXIMUM RATINGS. Absolute Maximum Values: 2N503B 2N5039 2N6354 2N6496

'COLLECTOR-TO-BASE VOLTAGE •...•.•.•••••••. VCBO 150 120 150 150 V
With -1.5 volts IV BE) of reverse bias and
external base-ta-emitter resistance (RSEI=100n ••..... VCEX(susl 150 120 V
With external base-to-emitter resistance
(RBE) =500n. L =7mH ...................... VCEX 130 V
With RBE .. 50n •..••..•..••....•.....•. VCER('u,) 110 95 130 V
With base open . . . . . . . . . . . . . . . . ,.. . . . . . . . . . . . VCEO(sus) 90 75 120 110 V JEDEC TO-3
'EMITTER-TD-BASE VOLTAGE.................. VEBO 7 7 6:5 7 V
'CONTINUOUS COLLECTOR CURRENT. . . . . . . . . . • . IC 20 20 10 15 A
'PEAK COLLECTOR CURRENT .........•..••.••• ICM 30 30 12 A
'CONTINUOUS BASE CURRENT. • . . . • . . • . . . • . . • • . IB 5 5 5 A
'TRANSISTOR DISSIPATION:. . • . • . . . • . . . . . • • . . • . PT
At case temperatures up to 25°C and VeE up to 28 v .... 140 140 140 140 W
At case temperature of 100°C and Vee of 20 V ....•• 80 80 BO 80 W
At case temperatures above 25°C .. , . . . . . . . . . . . . . - - Derate linearly to 200"C
'TEMPERATURE RANGE:
Storage & Operating (Junction) .................. . - - - -65 to 200 - - - ·C
PIN TEMPERATURE (During soldering)
At distances ;a. 1/32 in. (0.8 mm) 000
I
from seating plane for 10 s max. 230
·· !'~I
f\
'-.. .....
f'oIt,ol'".. I
~ r-."", "r-Z
-In accordance with JEDEC registration data format {JS-6, ROF-ll ,
lIIJ, CASE TEMPERATURE (TC) = ZSOC

· ~ 1\.\ 1"'- rr~c f4> I
J
,
•
fFOR TC ABOVE 2&', DERATE LllEARLYI
I ,~ ~,:, ~
. . . ..rr'" . . ..,
I
.21\~"
I 0.05m'7 ,.....
•
r~~'~'
IC MAX. (PULSED) PULSE OPERATION'
,
, ~ 1\. ~~..
O.1ms
IC MAX. (CONTINUOUS) 10 4
HUMIER OF' THERMAL CYCLES
10' '0'
~ ~ ~",<., r--
~ 40 i\- Fig. 2 - Thermal-cycling rating chart for all
~:J>"40~~ 'I.
10
, "
t ("'':/~~ \' , types.
t:!
5 · ~ ~\,\
~ ·
'" ,
~
\' ... , 20 I(MAX. tcONTINUOUSI2N5038,2N5039
., MAX.«:oNTIt«JOUSI~~~
IOf-- 2N8496 _ _~
J\
".I. ,
~ 1
,
I i
;r ·
6
4 ~
r~~.f.~
c.,. .
r
C"_.,~
4P.~f"4
f--
• -t-l~l'I
\.\1\
I ,' I
! ···
.t-- 'FOR SINGLE
NONREPETITIVE PULSE I I 'S/b-LINITED.l
"cEoMAXl1!5V(2NL~
VCEOMAX.=75V -
1 (Z11503~
VCEO MAX. = 90 V _
1......yCEO(2~'1y~~~v · . .. . ."
VcEO MAX- 9O .... {2N'038)-
f--
. •, ,
'leEO ru,·IC·IIO.... I2N6496)_
0.1
1 . •, 10
(2N5038)
,
1 .\ 1
• • , 1000
, • '0
COLLECTOR-TO-EMITTER VOLTAGE IVCEI-....
00 110
92~s-22af2
COLLECTOR-TO· EMITTER VOLTAGE (VCE)-V 92SS'364\R!
Fig. 3 - Maximum operating areas for
Fig. 1 - Maximum operating areas for 2N5038, 2N5039, 2N6496.. 2N5038, 2N5039, 2N6496.
125
POWER TRANSISTORS
2N5038,2N5039,2N6354,2N6496
ELECTRICAL CHARACTERISTICS. AtC. Tsmpsrsture (TC) = 2rC UnJ". Otherwise Specified
~
CASE TEMPERATURE (T t) ~ U~ C
CHARACTERISTICS SYMBOL
TEST CONDITIONS
VOLTAGE CURRENT
2N5038 2N5039
LIMITS
2N8354 2N9496
UNITS
~r
~!IZ
l
r-.. ~
"o~"'"
V de A de
MIll. MAX. MIN. MAX. MIN. MAX. MIN. MAX. _2 I"- "cro C...,
VCE VSE 'c IS
!J:'u
• Collector-Cutoff Current: ~!
~j",
r--.. ~ I
With emine, open
VCB",150V
'CBO mA
u. """.l", t-- ~EOi..1
With base open 'CEO
66
70
100
20
20
20
mA ~:90
~~ . t-..
~ I
With base-emitter
junction reverse-biased
110 -1.6
130 0
140 -1.6 50
50
20
;~
i "
'0
. ... . ..." . ...'''''
tOO
I
f""'--,
EXTERNAL BASE-TO-EMITTER RESISTANCf (RB[)-.tl.

"'CEO"""
TIT
140 0 10
mA '2CS-2U04
'CEV 85 -1.5 10 Fig. 4 - Collector·to-emitter sustaining volt·
At TC "1SooC 100 -1.6 10
130 0 25 tage characteristics for 2N5038,
At TC III 125°C 140 0 20 2N5039 and 2N6496.
-5 15
* Emitter Cutoff Current leao -6.5 mA
-7 50 50 50
6' 20 150
• DC Forward-Current hFE 8' 12 100
Transfer Ratio 10·' 10 100
2' 50 250 30 260
10' 20 100
12" 20 100 ;-
• Magnitude of Small·Signal
Forward-Current Transfer
Ratio: f=5MHz Ih,.1 10 12 12 12
f= 10MHz 10
Sustaining Voltage VcEoIsuo) 0.2' 0 90" -
With base open
With base-emitter ,
SASE -TO-EMITTER VOLTAGE IVSEI-V
junction reverse biased arid -1.5 0_2 15ot> - 120b- v
VCEX(sus)
external base-to-emittet
resistance (RBE~" 100n Fig. 5 - Typical input characteri.tics for
With RBe '" 50n 0.2 110" - 95 130 2N5038 and 2N5039.
..; loon VeER 0.2
Emitter-to-Base Voltage:
v
Ie = 0.05 A VEBO
= 0.006 A 6.6 -
COLLECTOP. -TO- EMITTt:R VOLTAGE (VeE)-! v
8' 1.6
Base-to-Emitter Voltage VBE 10' 1.8 v
12' 1.8
B' 0.8 - 1.0
.. Collector-to-Emitter VCE(sat) 5' 0.5 - - 0.6
Saturation Voltage 10' 1.0 - 1.0 1 v
12' 1.2 - 1.0
20" 6 2.5 2.5
6' 0.5 - 1.3
Base-to-Emitter 8' O.B - 2.0 V
Saturation Voltage 10' 1
20' 6 3.3 3.3 0.'
Output Capacitance:
VCB'" 10V, f:;' MHz
Cob 400 - 400 400 - 400 pF
I 1.5 3
BASE-TO-EMITTER VOI,.TAGE IVBEI- V
Forward-Bias Second Breakdown 26 6.5
Collector Current: IS/b 28 5.0 6.0 - 6.0 - A
t '" 1s, nonrepetitive 46 0.9 0.9 - 0.9 - Fig. 6 - Typical input characteristic for
Second-Breakdown Energy:
With base reverse biased, ES/b -1 0:3 - 2N6496.
RBe '" 510. L = 26pH
mJ
RS - 200. L - 180pH -4 13 13 13
-4 8 6.7 -
.. Saturated Switching Time 0.5 - 0.3 - CASE TEMPERATURE ITcl> 2'·C
(VCC= 3OV. 0.8 - 0.5
l.i IB,"Bi:
Rise Time
10
12
6
1.0-
1.2
0.5-
- 0.6
0.6
.2.,
-u
t!2o 1.2A
Storage Time 8 0.8- 1.6
~
10 1.0- 1.5
.a
W
Storage Time (No Load)

12
0.5
1.2-
0.5-
1.5
.' ~ '0
15
..
,
Fall Time
0.5
O.B -
0.2
0.6
L 000
..
. ..
10· 1.-D - 0.5
12 1.2 - 0.5 0
Thermal Resistance:
Junction-to-Case R8JC
10
20
lU 1.25 - 1.26
1.25 -
1.25 0C/W '0
" 20 25
COLLECTOR-TO-EMITTER VOLTAGE IVCEJ-V
40
••
.. In accordance with JEOEC regIstratIon data format (JS-6, ROF.').
• Pulsed; pulse duration" 350p', duty factor:; 2%. Fig. 7 - Typical output characteristics for
b CAUTION: The sustaining voltages VCEO(sus). VCER(susl. and VCEXlsus) MUST NOT be measured on a curve tracer_
2N5038.
126 ______________________________________________________________________
______________________________________________________________
~
-
-
-
-
-
-
-
-
-
-
-
-
-
-
P
O
W
E
R
T
R
A
N
S
I
S
T
O
R
S
2N5038,2N5039,2N6354,2N6496
C-'SE TEMPERATURE!TC)' 25- C
I.U"
tlA
"0 l-tt •
200
180
"0
I • iliA
'0
~ 15 20 ~ ~ 35 ~ ~
COLLECTOR·TO-EMITTER VOLTAGE (VCE,-I/

for2N5039.
~ ::,;:', ",' I ' : , ! ::': 'i I:' I' :1:": '::' ''i' CASE TEMPERATURE ITe I- 25-C C
~ ::!~!:' 1,,1 ; : : : ' ; :: •

"
8~:, R:F
"I'''',' "!f!1t!"
.... 100"
4
IIi~rr;L'I]i ,
100 . .
,:'1::1"
'OmA
,I'lL
tii' .'" ,:,' ' ?-,' " "~,,, ;;;I:'", 'I';: ' lASE CURRENT 1181-20 1ft"
~ag':m:~:;;::;~'~tt~~~~'~E~'::b·'·hl[~~Td·~'lI~mi"~'I:tl'~FHl'," ~I;~
LO IS 20 25 30 35 40
COLLECTOR~TO-EMITTER VOLTAGE 1VeEI-V
0.1 r..:; ;;il!i: ,::;1' •

B 10
COLLECTOR-lO-EMITTER VOLTAGE (VCE)-V
6

BOO
---
4 & 81000 for2N6496.
c
I • • I
a
~
..
COLLECTOR-TO-!MITT!R VOLTAGE IVeEI-V
leel-eOI'"
&
Z Fig. 12 - Typical output characteristics for
III
II:
II:
4 2N6354.
a
II:
~ 2
u
~
...J
0
U
OJ
8
&
0.01
2N5038.
Fig. , , - Maximum operating areas for 2N6354.
127
~ERTRANSISTORS' ______________________________________________________________________________
2N5038,2N5039,2N6354,2N6496
COI.L.ECTO" ..TO-EMITTEIt
VOLTAGE (Vee:)- 2 V
"
,
c
I ..
I ~ .
0,5 I 1.11
BASE-TO-EIoII IllER VOLTAGE (yar-v.
t2cs-aOIU
Fig. 14 - Typical transfer characteristics for Fig. 15 - Typical tranSfer characteristics fo, Fig. '6 - Typical transfer charactaristics for
2N5039. 2N6496· 2N6354.
COLLECTOft - TO-EMITTER VOLTAGE (VeE)-5V COLL.ECTOR-lO-EMITTER VOLTAGE (VCE'- II II

j 1110 ~ i I !
t-' i
i 125 t"-. 100
II
r-n f-... .
I,·· C,,"SE TEMPERATURE (TC 1. 25- C
\
I; ~'" - • i-'
:l"ut\E (Tc)SZJ.! '" , ~

,,~.
I '"••
I" - - ~5
- - 1\
~
• r-:,
i - -. -
"
~
·55
.........
--- "\
I
~
g
00'
. ... . ... . ... -. ..."'"
0.1
COLLECTOR CURRENT (Icl-A
10
g •
•., M'
COLL.ECTOR CURRENT I:Iel-A
. .. ,. - 4.
!~
g
0.01 0.1 I
C9LLECTOR CURRENT Uc I-A
Fig. 17 - Typical dc beta characteristics for Fig. 18 - Typical dc beta characteristics for Fig. 19 - Typical dc beta charactaristics for
2N5038. 2N5039. 2N6496.
COLLECTOR·TI).ElITTER VOLTAGE (VCE)" 11 II

• CASE'fEtIPEliATURElTC)"'25'C
; M
./" ~
\
ii
,/
"
H / \
/
I .. II
., 4 t. I 2
COLLECTOR CURRENT !lei-A
4 Ii '10
:lICS-ZOIU
•u , , . 0
1.'
COlLECTOR CURRENT fIe I-A
, , ., 1D
COLLEC·,OR··,.-•• ",T"; SATURATION VOLTAGE [Yce:bOtl]-v
ftCS-20127
Fig. 20 - Typical normalized dc "eta charac- Fig. 21 - Typical gain-bandwidth product for Fig. 22 - Typical saturation voltage charac-
teristics for 2N6354. 2N5038,2N5039,2N649~ teristics for 2N6354.
CAS£ 'TEMPERATURE 1Tcl-2!1-C CASE TEMPERATURE «T c I" 2S"C
.
XI BASE SUPPLY VOLTAGE (VBBI--4V BASE SERIl$ RESISTANCE (Rel.ZOD.
c '.Hf--1-+-.--I-:'-'~-+--+-H
i '" ~
.
C INDUCTANCE ILI-200,.H
.Hf--1-~~-~
i .
~ w
j 15
00
!!
a a •••
15. ~
.Hf--1-+-~~~
~ ,. l.--- ~
~
8,
~
-. ! o., 'I
~
: II
v/ v
1000
B
=
~
50 8 102
INDUCTANCE (1..) -J.IH
'0'
.o. /
20 4 .. .
BASE SERIES RESISTANCE (RBI-A
.•• 12• 00.
.
INDUCTANC! ILI-I'H
, 0
92CS-t~464Rt
Fig. 23 - Maximum reverse-bias, second- Fig. 24 - Maximum reverse-bias, second- Fig. 25 - Maximum reverse-bias, stJeond-
breakdown characteristics for breakdown charlicterirtics for breakdown characteristics for
2N5038 and 2N5039. 2N5038 and 2N5039_ 2N6496.
128 _____________________________________________________________________
POWER TRANSISTORS
2N5038,2N5039,2N6354,2N6496
eASE TEMPERATURI ITc 1-u·e
8AS£ SUPPI.Y VOLTAGE (VUr-4Y
·I
.'0
~ ·
INDUCTANCE iI.I-ZOO,..M-
S
·
i! -, II
Soop-H
750,..H
I
~ r; -"- I--
/' ~
1000,."
i I I
··
./
/V . ••• L:U::"::'l:·-
0 ZQ 40 10 '0
,co ,2. •••• >i I. /1 .• · <JH;:
USE SERIES RESISTANCE (",1- g'
tOLL.ECTOR CUftROO (Ie 1-0\ 9255· 3640R2 COLLECTOR CURRENT(Icl-A
Fig. 26 - Maximum reverse-bias, second- Fig. 27 - Typical rise-time and fall-time Fig. 28 - Typical storage time characteristics
brt1akdown characteristic. for characteristics for 2N5038, 2N5039, for 2N5038, 2N5039, 2N6496.
2N6496· 2N6496.
t 2.5
I
:;- 2
!! 1.5
~ ,
'I
~ 0.1
4 • • 10 12 4 • • 10 12
COLLECTOR CURRENT 11cl-A
COLLECTCMt CURRINT 'Icl-.
Utl-itOlil
Fig. 29 - Typical rise- and fa/Hima chara<.~ Fig. 30 - Typical storage-time characteristics
teri.tics for 2N6354. for2N6354.
129
POWER TRANSISTORS
2N5050, 2N5051, 2N5052

FBBtUrss:
High-Voltage Silicon N-P-N Tranalato,. • Economy typel for Ie/dc circuit•
• Fat turn-on time 1111 hltlh collector current
For High-Speed Switching and Linear-Amplifier ADDlications
The RCA-2N5050, 2N5051, and 2N5052 converters, inverters, deflection- and hi-fi
are silicon n-p-n transistors with high break- amplifiers.
down voltages and fast switching speeds. The 2N5050, 2N5051 , and 2N5052 tran-
Typical applications for these transistors sistors are supplied in steel JE.DEC T0-213MA
include high-voltage operational amplifiers, hermetic packages.
high-voltage switches, switching regulators, TERMINAL DESIGNATIQNS
MAXIMUM RATINGS,Absolute-Maximum Values: E0(FLA~GE)

2N&05O 2N5O&1 2N&062
125 150 200 V
• v CBO •
• v CEO '
• V EBO '
125 150
6
200 V
V
o 0
• IC' 2 A a
ICM . 4 A
• lB' . A
JEDEC TO-213MA
• PT TC upto 25 C° • • • • • 40 W
T C above 25·C, derate linearly. _ _ _ 0.266 W/C
• T stg • . • • • . • • .
_ _ _ -55 to 200 _ _ _ °c
• TC' . • • • . • • . . _ _ _ -55 to 17!i _ o{:
• TL
At distance ;;'1/16 in. (1.5B mm) from seating
plana for lOs max.. . . . • • .
_ _ _ 236
·c ...
COLLGlOR-TO-EMITTU '«II.TAII (VeI)-' v
F\
• I n accordance with JEDEC registration data.
If" ~
I~K»
\1\'
~
xL
I'~
, 10 it
'2e1-101'2
Fig. 2 - TyplCIII de beta cMracteri.tic. for

.11 typas.
Fig. 3 - Typla/ coIltlDtoMQ-emltter ••tu,..tlon

",*-", as. function of collector
COLLECTOR-TO-EMITTER VOLTAGE tvcE'- V cu".."t.
IICM-_
Fig. 1 -: Maximum o".,..ting.ness for'" typas.
130 ____________________________________________________
~
-
-
-
-
-
-
-
-
-
-
-
-
-
__________________________________________________________________________________ POWERTRANSISTORS
2N5050, 2N5051, 2N5052

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25"C
~
c:aLLECTCIII-'R)"DIITTD YClLTMl 1Vcr:1-1O II
Un/ellS Otherwise Specified
1
If;'r--.-lGr
U_
'r--.-lff=
J~'1 IL
,.
VOLTAGE CURRENT I
CHARACTERISTIC
Vdc Adc
2N5050 2N5051 2N5052 Units it II
~I 1
VCE
125
VBE
-1.5
IC IB Min. Max Min. Max Min. Max.
- 0.5 - - - -
I! zo 1
/
-'-
• ICEX 150 -1.5 - - - 0.5 - - ~
L/J /
200 -1.5 - - - - - 0.5
V L
° V ....... ......
125 -1.5 - 5 - - - - d4
•• 0• to I~
At TC= 150°C 150 -1.5 - - - 5 - - rnA

200 -1.5 - - - - - 5
62.51 - 0.1 - - - - Fig. 4 - Typical input characteristics for all types.
• ICEO 75 - F"- - 0.1 - -

100 - - - - - 0.1
• lEBO -6 0 - 0.1 - 0.1 - 0.1
• VCEO(sus)b 0.2a 0 125 - 150 - 200 - V
5 0.758 25 100 25 100 25 100
• hFE 5 1- 25 - 25 - 25 -
5 2- 5 - 5 - 5 -
• VeE 5 0.758 - 1.2 - 1.2 - 1.2
• VCE(sat) 0.758
2-
0.1
0.4
-
-
1
5
-
-
1
5
-
-
1
5
V
ISlb 00 . 0.15 - p.15 - 10,15 - rnA

• Ihfel f=5MHz 10 0.25 5 - 2 - 2 -
COI..LECTOR CURRENT 'Xc'-A
Fig. 5 - Typical rise time as a function of col/ector
current.
• hfe f= 1 kHz 10 0.25 25 - 25 - 25 -
• Cobo f= 1 MHz lOC 0 - 250 - 250- 250 pF
• tr 20d 0.75 0.1 - 0.3 - 0.3- 0.3
• ts 20d 0.75 0.1 - 3.5 - 3.5 - 3.5 /.IS
• tf 20d ~.75 0.1 - 1.2 - 1.2 - 1.2
13.7 I - I 3.7 I - 13•7 I°cm I
• In accordance with JEDEC registration data. C Vce value
• Pulsed: pulse duration = 300 IlS, duty factor <; 2%. d VCC value
b CAUTION: The sustaining voltage VCEO(susl MUST NOT be measured on a curve tracer. See circuit,
Fig. 9, or equivalent, Ito measure VCEO(sus).
c:ou.ECTOII CUMlNT Clcl-A
Fig. 6 - Typical.toTBf/fI tim.a. a function of

col/ector current.
1
=
If
t,
cou.lECTOII ~ CJcI-A
10 100 110 200 110 100 ItO
COLLECTOR IU....LT \IOt.TAIE CVccl-V J2CS0.-..
Fill. 8 - Typical rise, hili, and .tOTBf/fI time as a
Fig. 7 - Typical hili time as /I function of collector
function of collector ,upply voltage.
CU"lInt.
131
POWERTRANSISTORS ____________________________________________________- - - - - - - - - - - - - - - - - -__- - - -__
2N5239, 2N5240
High-Voltage Silicon N-P-N Transistors Features:
• High voltage ratings: VeER(SUS)
For High-Speed Switching and Linear- = 350 V, RaE";; 50 Q (2N5240)
Amplifier Applications in Industrial and = 250 V, RaE";; 50 Q (2N5239)
Commercial Service • High power dissipation rating:
PT =
100 W at VCE 150 V, =
TC = 25°C
The RCA-2N5239 and 2N5240· are amplifiers, Inverters, deflection cir- • For switching applications where
multiple epitaxial silicon n-p-n power cuits, switching regulators, and high- circuit values and operating condi-
transistors employing a new overlay voltage bridge amplifiers. tions require a transistor with a
construction with several emitter These types differ In breakdown high second breakdown rating (IS/b)
sites. c' voltage and leakage current values. (limit line begins at 150 V)
The high breakdown voltage ratings The 2N5239 and 2N5240 are supplied
In steel JEDEC TO-204MA hermetic • Exceptional second-breakdown:
and exceptional second-breakdown
capabilities of these transistors packages. 0.67A at VCE 150 V =
make them especially suitable for 'RCA Dev. Nos. TA2765 and TA2765A, respec· • Maximum area-of-operation curves
use in series regulators, power tively. for dc and pulse operation
MAXIMUM RATINGS, Absolute-Maximum Values

2N5239 2N5240
'VCBO······································· . 300 375 V
VCER(SUS)
RBE";;,50Q ................................ . 250 350 V
, VCEO(SUS) ................................... . 225 300 V
'VEBO······································· . 6 V
'IC·········································· . 5 A JEDEC TO-204MA
'lB·········································· . 2 A
, PT
TC";; 25·C and VCE";; 150 V .................. . 100 W
Tc";;25·CandVCE> 150V .................. . _ See Fig. 1 _
TC>25·CandVCE>150V .................. . _ See Fig. 1 and2 _
'Tstg, TJ ..................................... . - 65to 100 ·C
TL
At distance ~ 1/32 In. (0.8 mm) from seat-
Ing plane for 10s max....................... . 230 ___ ·C
'In accordance with JEDEC registration data
25 50 1'5 100 125 150 175 200

CASE TEMPERATURE 1TC1-·C
Fig. 1 -Derating curves for both types.
'00 COLLECTOR-TO-EMITTER VOLTAGE (Vcel-'OV
~ 40
1m
i
w !O
II
:1':
\,Tc)·,25"C
~
~ to - ~.}
~~.r..,;;.t
"'~ /-:~~"" ~
'I'
~ 1\
~ '0
i
4 6 '10 4 2 4 6 '1015
2 4 6 '10.
92CS-'9922
I 0
10 100
. ,. IK
EKTERNAL BASE-fO-["TTER .RESISTANCE (RIEl-A
,01(
u
a
n, '0
COLLfCTOR CURRENT(I(:}-A.
10
Fig. 2· Thermal·cycling rating chart for both

types. Fig. 3 -Sustaining voltages as a function of Fig. 4 - Typical de bela characteristics for both
base·to·emitter resistance for both types.
types.
132 __________________________________________________________________
2N5239, 2N5240
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) 25·C unless
otherwise specified
CHARACTERISTIC VOLTAGE CURRENT 2N5240 UNITS
Vdc Adc 2N5239
VCE V8E IC 18 Min. Max. Min. Max.
ICEO 200 0 5 - 2 -
'CEV 300 -1.5
375 -1.5 - -
4 -
2
-- -
mA
(TC =
150·C) 300 -1.5 5 - 3 -
lEBO (VEB 5 V) = 0 - 5 - 1
(VEB 6 V) = 0 20 - 20 -
VEBO 0.02 6 - 6 -
VCEO(SUS)a 0.20 225 300 - V -
VCER(SUS)i:I
C, (RBE" 50 Q)
0.2b 250 350 - -
hFE 10 OAb 20 80 20 80
10 2b 20 80 20 80
10 4.5 b 5 - 5 -
VBE 10 2b - 3 - 3
VCE(sat) 2b 0.25 - 2.5 - 2.5 V
4.5 b 1.125 - 5 - 5
'SIb =
(t 1 s) 150 0.67 - 0.67 - A
ES/b (RBE - 50 Q,
L = 0.2 mH, 4 1.6 - 1.6 - mJ
VEB = 4 V)
Ihfel =
(f 1 MHz) 1.0 0.2 2 - 2 -
hfe =
(1 1 kHz) 10 4 20 - 20 -
1T 10 0.2 2 - 2 - MHz
Cobo (1 = 1 MHz) 10 c 0 - 150 - 150 pF
ReJC - 1.75 - 1.75 ·C/W
·In accordance with J EDEC registratIOn data.
a CAUTION: The sustaining voltages VCEO(sus) and VCER(SUS) MUST NOT be measured on a curve
tracer. These sustaining voltages should be measured by means of the test circuit shown in Fig.14
bPulsed; pulse duration .. 350 I's, duty factor .. 2%.
eVeB value
,::::'::':: ""H:
:1"', 'I""!:::.
~T':""I"':
~ ,'[:,'1'"''
u '1',::':r ":1:," .
1\J:::':"
;I:N:::::::
8 ' 'H::>:~k 'I""
, IH'
BASE-TO-£MITTER VOLTAGE IIIBEI-ll
',~ ','" ,
Fig. 5 . Typical transfer characteristics for both Fig. 6· Typical output characteristics for both Fig. 7· Typical reverse-bias, second·breakdown
types. types. characteristic for both types.
__________________________________________________________ ~------133
POWERTRANSISTORS ________________________________________________________________ ____________
~
2N5239, 2N5240
BASE SUPPLY VOLTAGE (Vea)' -, V
INDUCTAMce iLl' 5OO.N
CASE TEMPEtfATURE (Te)" ZSo C
8A~£ SERIES RES.HAMeE (Re) - Q
Fig. 9 . Typical reverse·bias, second·breakdown

characteristic for both types.
'0 '00
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- v
Fig. 8· Maximum operating areas for both

types.
BASE SUPPLY VOLTAGE (VBB1-V
Fig. 10· Typical reverse·bias, second·break·

down characteristic for both types .
au.£CTOR-T()oo£MITT£Jt VOLTAGE (Vcl)-.o v ....... 'MD'ftt.IOJII

CUI: TlMfIlJtATURf.ITcI-2S· C PULSE WIDTH ~ 20 III
M:~ITMIN RATI-SOONl..lUlt
REPETITION RATE • ~oo PUlSES/.
~~~~~ylO'I
.
! •
I
f
2.'
COLLECTOR SUPPLY VOLTAGe (VCc!'30 V
CASE TEMPERATURE (T c)- 25-C
l
I
,.. tM(T~"~
! .
7
i
~ :;2
•
I•
~ 4
V ~ 1.5 I 0.'
8
} ...
'((TYP.J
i ,V :.
0
J'r~
~ ~
I 2
I'\. 0.'
0.4
• . ..I
0
0.0' 0., . II
,.0
. ••
0., .., 2.'
COlL.ECTOR CURRENT C1C)-A
; 0.'
QI . ,.I 2 ... , U 4
COLLECTOR CUARENT tlc)-A CCIUII:TCIIt~nd-"
Fig. 12· Typical saturated·switching time (star· Fig. 13· Typical saturated·time (turn·on or fall)
Fig. 11 . Typical galn·bandwidth product as a age) as a function of col/ector current as a function of col/ector current for
function of col/ector current for both lor both types. both types.
types.
134 ______________________________________________________________
POWER TRANSISTORS'
2N5293-2N5298,RCA3054
Hometaxial-Base, Silicon N-P-N VERSAWATT Transistors
Features:
General-Puroose Types for Medium-Power Switching and Amplifier
• Low saturation voltage-
Applications in Military, Industrial, andCommer'cial Equipment VeE(sati =1 V max. at Ie =0.5 A
(2N5293,2N5294)
" RCA-2N5293, 2N5294, 2N5295, 2N5296, = 1 V max. at Ie = 1 A
into TO-S6 sockets. Types 2N5294,
2N5297, 2N5298, and RCA3054 are 2N529S, and 2N5298 are electrically (2N5295, 2N5296)
hometaxial-base silicon n-p-n transistors_ identical to the 2N5293, 2N5295, and = 1 V max. at Ie = 1.5 A
They are intended for a wide variety 2N5297, respectively, but have straight (2N5297,2N5298)
of medium-power switching and amplifier leads. The RCA3054 is supplied with • VERSAWATT package (molded-
applications such as series and .shunt straight leads. silicone plastic)
regulators, and in driver and output stages • Maximum safe-area-of-operation
of high-fidelity amplifiers. Types2N5293, These plastic power transistors differ in curves
2N5295, and 2N5297 have formed voltage ratings and in the currents at
emitter and base leads for easy insertion which the parameters are controlled.
MAXIMUM RATINGS, AblDlurs-/Auimum V,lues: 2N5293 2N5295 2N5297

2N5294 2N5296 2N5298 RCA3064
TERMINA~ DESIGNATIONS
COLLECTOR.TO~BASE VOLTAGE . . . VCBO 80 60 80 90 V
COLL:ECTOR·TO·EMITTeR SUSTAINING VOLTAGE:
With -1.5 volts tVeE. of rever.. blat . VCEVI'UI) 80 60 80 90 V
With .xtern., b...·to..mitt.r ruilt.ncIIIRSEI" 100 n. VCERI,us) 7. 50 70 60 V
With base open . . . . . . . . . . • • . VCEolsus) 70 40 60 55 V
EMITTER·TO·BASE VOLTAGE. VEBO 7 5 V
'COLLECTOR CURRENT. Ie 4 A
BASE CURRENT . • . . . 18 2 A
TRANSiStOR DISSIPATION: 92:CS·27520
PT
At c"
'emPlraturlS up to 26°C ... 36 36 36 36 w BOTTOM VIEW
At c:a.
temp.raturesllbove 25°C. Derste linearlv at 0.288 wlc JEDEC TQ-220AA
2N&293. 2N6296. 2N6297
At ambient '.mpttatur•• up to 25°C. 1.8 1.8 ..8 1.8 w
At ambient temperature. above 25°C . Jerafe lin•• rlv at 0.0144 wlc B
&/
TEMPERATURE RANGE:
Stor. and OplrftinIlIJulIC'tlon) . . . . . - - -6510+150 _ _ __ 'e
LEAO'TEMPERATURE ID~rl"" soldering): e
At dil,ence;;;;"l/8 in. 13.17 mm) 'rom ca_for 10. max. 'c
-,-
- - _ 235
E
92eS-U'la
BOTTOM VIEW
JEDEC T()"220AB
2N&294. 2N5296. 2N5298. RCA3054
"I
~
ai I
is~. •
CO~~ECTOR-TO-EMITTER IID~TAGE (VCE)-V

IICS ... 171,ORI
Fig. , - Maximum optlrsting Bress for 2N6293-2N6298. Fig. 2 - Maximum aptlrating areas for RCA3054.
_________________________________________________________________ 135
POWER TRANSISTORS
2N52934N5298,RCA3054
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25"C, unless otherwise specified.

CHARACTERISTIC VOLTAGE CURRENT 2N5293 2N5295 2N5297
SYMBOL V de Adc 2N5294 2N5296 2N5298 RCA3064 UNITS
.. ,. VCE VBE IC IB MIN. MAX. MIN. MAX MIN. MAX MIN. MAX.
90 -1.5 - - - - - - - 1
ICEV e 65 -1.5 - 0.5 .- - - 0.5 - -
35 -1.5 - - - 2 - - - -
ICEV e
90
65
-1.5
-1.5
-
-
-3
-
-
-
-
-
- 3 - -
6
mA
ITC = 150°C)
35 -1.5 - - - 5 - - - -
ICER 50 - 0.5 - - - 0.5 - -
IRBE = 100 H) 20 - - - - - - - - rnA
ICER
'ITC = 150°C)
50 - 2 - - - 2 - - rnA
-7 0 .. 1 - - - - - 1
lEBO -5 0 - - - 1 - 1 - - rnA
-4 0 - .- - - - - - -
4 0.5 30 120 - - - - 25 100
hFE c 4 1 - .. 30 120 - - - -
4 1.5 _. - - 20 80 - -
0.1 0 70 - - - -
_.
55 -
VCEolsus)C 0.1 0 - - 40 - - - - V
0.1 0 - - - - 60 - - -
0.1 75 - - - - - - -
VCERlsus)C 0.1 - - 50 - - - - - V
IRBE = 100 !l) 0.1 - - - - 70 - 60 -
-1.5 0.1 80 - - -- - - - -
VCEvlsus)C -1.5 0.1 - - 60 - - - - V
-1.5 0.1 - - ~
- 80 - 90 -
4 0.5 - 1.1 - - - - - 1.7
VBE c 4 1 - - - 1.3 - - - - V
4 1.5 - - - - - 1.5 - -
0.5 0.05 - 1 - - - - - 1
1 0.05 - - - - - - - -
VCElsat)C 1 0.1 - - - 1 - - - - V
1.5 0.15 - - - - - 1 - -
IT 4 0.2 0.8 - 0.8 - 0.8 - 0.8 - MHz
0.5 0.05 a - 5 - - - - - -
tON VCC 1 O.la - - - 5 - - - - JJs
= 30 1.5 0.15 a - - - - - 5 - -
0.5 -0.5a - 15 - - - - - -
tOFF VCC 1 _O.lb - - - 15 - - - - JJs
= 30 1.5 -0.15 b - - - - - 15 - -
- 3.5 - 3.6 - 3.5 - 3.5 °c/w
ReJC
ReJA - 70 - 70 - 70 - 70 °C/W
a IBI yalue Iturn-an base currentl. b IB2 yalue hurn-aff base current I. c Pulsed, pulse duration = 300 JJs.
el CEX lor RCA3054. dutY factor = .018.
136 ____ ~ _________________________________________________________

POWER TRANSISTORS
2N5293-2N5298, RCA3054
.,1'<
.
CA$lTbI'!IIATUIlIi (T
I
·
""'I
•I ~
~ 75
YCI!I QH~~1"2M$2t41 I
{ • I .~
'co I2M52t7l2M52'l11 YC~O
;1"
~ 'f--!--.l~ ~ ~,~ !~ 6S J
::i r----...~~ .\ '~ il,o r--
·
VeEa
10 ~.,.,
=~
a "'I \ ,~.." !is"
~
;;
•
·, I \ \ \\'\:l\\<1>
\ \ \. \..'~.~ U.
Sll.s I I ill
YCER(2MU'5'2M5m,
I
~ IIII I r--
.~, .\% \! $~l~"t~ e" '"''
I
1000
. ,
"
NUM8EII Of'
10,000
TH[AMAL CYCLES
. I I
100.000
" , .I ill , I ,
" 10." , " , lIP' !1Ii
I ..
E)lTEfItrIALlltI!.T().t!MITTeIlIlI!SlSTA/fCE IIIII!I-Q
lOt !" ,.
"$E.TO·EMITTH YOLTlGl! ('IalE' - v
Fig. 3 - Thermal-cycling rating chart for Fig. 4 - Sustaining voltage vs. base-to-emitter Fig. 5 - Typical input characteristics for
all types. resistance for 2N5293-2N5298. 2N5293. 2N5294. and RCA3054.
BASE·TQ.I!IIITTI!IIVC1 TAG! (VIE) -.,
Fig. 6 - Typical input characteristics for Fig. 7 - Typical input characteristics for
2N5295 and 2N5296. types 2N5297 and 2N5298.
IJASE·fO.Elmn ¥OLTMI! (Ye!t - ,

......
Fig. 8 - Typical transfer characteristics for Fig_ 9 - Typical transfer characteristics for
2N5293. 2N5294. and RCA3054. 2N5295 and 2N5296.
• T COLU!CTOR·TO.Ellllnd VOLTMII! IVaI •• Y

II.
1 ". III
,
~ II f-- '~1/ --\
iI .. _7~~9
Ii -/ ~
~;12
II" \~
~
~ \..
IASEoTG-I1fTTER ¥GLTAOI(YlI5t-.,
O.DDI Z 4 •••. 01 I "'0.1
• COLUCTOIt tuIHNT ItcI

!
-"
'S'u I 4 I ••
,.00' .., , ",
COLLICTOIt CURttItfT lIel - Ii

1.0
, , 1110
Fig. 10 - Typical transfer characteristics for Fig. 11 - Typical de beta for 2N5293. Fig. 12 - Typical de beta for 2N5295.
2N5297 and 2N5298. 2N5294. and RCA3054. and2N5296.
137
POWERTRANSISTORS _______________________________________________________________________
2N5293-2N5298,RCA3054
CCK.UCTCllt-To.lllnO c~~Ti.r~,.u~r.! jT-'I~~101Il"ce)· .y CASlTfIlPl.ATURIITcI;"ZPC-' CE •
VOLTAGE (Va). " Y
... ,
11.2 t ,.. L
~ ~
r 0.'
./
-'" i ,.
I.
/
"\.
I al~-+H+4-++~~+H~~~
~
I",
,0...
I• ......
3
~ 101~~+H-+~~~44+r11~\+H
0,001! • "0,01 r • "0.1 ! 46 '1.0 t
. . . ., , . . , ,
, I
lD
COLI.IC1Ort CURRlMT lIe) - IlIA
ltel 1,00
I.' ,,10
. . , , . . , ,'....
COlLECT. CUMENT Ilcl-"
1110
CGl.U!CTOll:CUIIIIEtfr(lc:}~A
Fig. 13-Typical dc beta far2N5297 and Fig. 14- Typical gain-bandwidth product for Fig. 15-Typlcal gain-bandwldth product for
2N5298. 2N5293, 2N529;'; arid RCA3054. 2N5295 and 2N5296.
i I,
~
I..
i I.
/
/
i
1.0
', ...
0.'
• 11 10 • "'00
CDLLECTOR CURIr!NT ftcl ~ mA
CaLLl!eTOR. TO·e.ITTrl VOL rACE (Va) - 'I
""".
Fig. 16- Typical gain-bandwidth praduct far Fig. 17- Typical output characteristics for Fig. 18- Tvaical outout characteristics for
iN5297 and 2N5298. 2N5293, 2N5294, and RCA3054. 2N5296 and 2N5"296.
9acl-I4"2
Fig. 19- Typical output characteristics for Fig. 20- Typical output characteristics for Fig. 21- Typical saturated switching charac-
2N5295 and 2N5296. 2N5297 and 2N5298. teristics for 2N5295, 2N5296,
and RCA3054.
138 __________________________________________________________---
POWER TRANSISTORS
2N5301, 2N5302, 2N5303
High-Current High-Power Features:

• Specification for hFE and VCE(satl up to 3O,A
High-Speed N-P-N Power Transistors • Current gain-bandwidth product fT = 2 MHz
min. at 1A
The RCA-2N530t, 2N5302 and 2N5303 are converters, inverters, and solenoid (hammer) .. Low saturation voltage with high beta
epitaxial-base silicon n-p-n transistors in- Irelay drivers_ • High dissipation capability
tended for a wide variety of high-power, These devices differ in maximum voltage
high-current applications, such as power- ratings and VCE(sat), VBE(sat), and VBE
switching circuits, driver and output stages characteristics. All are supplied in JEDEC
for series and shunt regulstors, dc-to-dc TO-204MA hermetic steel packages_
MAXIMUM RATINGS, Absolute-Maximum Values:
'2N5301 2N5302 2N5303
* VCBO ' 40 60 80 V
* VCEO(susl 40 60 80 V
* V EBO ' 5 V
* IC' 30 A
* ICM 50 A
7.5 A
• lB'
IBM 15 A
• PT
At T C "25°C 200 W
At TC >25°C Derate linearly 1.15 WloC JEDEC TO-2fl4MA
See Fig. 1 and 2
* T stg ' T J . - - - -65 to 200 - - - - °c
TL NOTE: CURRENT DERATING AT CONSTANT VOLTAGE
APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION
At distance ~ 1132 in. (0.8 mml from seating plane Q AND IS/b-LIMITEO PORTION Of MAXIMUM-OPERATING
for 105 max. . 230 °c ZW AREA-CURVES. DO NOT DERATE THE SPECIFIED VALUE
~~~ FOfi Ie MAX.
* In accordance with JEDEC registration dat: format JS-6 RDF-2. il!ii

;!~
iI~l1
~"'w 100
d~
l5~Hi 70
~~ffi
ZN'"
W''''
50
ffi~B
~\i
"
~ eo 75 100 125 150 175 200
CASE TEMPEFiATURE (TC)--C
Fig_ 2 - Derating curves for 2N5301, 2N5302,

and2N5303_
000. COl.LECTOR-lO-EMITTER VOLTAGE (VcE)-2V--+-
·
6
j
2 2
l~"c
~ c;,t.SE1~RATURE(7c~ ~
IE ·:......
100
-"'0
5 -. 10
2
"~
I ·
6
Ii' 2
g
I
0.1 4 6 8 I 4 6 810
"10 COLLECTOR CURRENT (Ic)-A
COLLECTOR-TO-EMITTER VOLTAGE (V(;E}-V
92C5-29797 Fill- 3 - Typical dc beta characteristics as a
Fig. 1 - Msximum operating areas for 2N5301, 2N5302, and 2N5303. function of col/flCtor cu"ent for
2N5301, 2N5302, and 2N5303_
______________________________________________________________ 139
POWER TRANSISTORS
2N5301, 2N5302, 2N5303

ELECTRICAL CHARACTERISTIcs..t Ca88 TlHTlpBf'8tum (Tel z 25"c Un/ellS otherwise specified
CHARAC- VOLTAGE CURRENT
TERISTIC Vdc Adc 2N5301 2N5302 2N5303 UNITS
VCE VBE IC IB \Min. Max. Min. Max. Min. Max.
40a - 1 - - - -
• ICBO 60a - - - 1 - -
soa - - - - - 1
40 -1.5 - 1 ~
- - -
• ICEX 60 -1.5 - - - 1 - -
SO -1.5 - - - - - 1
• ICEX 40 -1.5 - 10 - - .- - mA
Tc= 60 -1.5 - - - 10 - -
150·C SO -1.5 - - - - - 10
40 - 5 - - - -
• ICEO 60 - - - 5 - -
SO - - - - - 5
* IESO -5 - 5 - 5 - 5
2 lb 40 - 40 - 40 -
2 lOb - - - - 15 60
* hFE 3 15b 15 60 15 60 - -
2 20b - - - - 5 -
3 30b 5 - 5 - - -
• VCEo(susl 0.2 40 - 60 - 80 -
2 lOb - - - - - 1.5
2 15b - 1.7 - 1.7 - -
* VSE 4 20b - - - - - 2.5
4 30b - 3 - 3 - -
lOb 1 - 1.7 - 1.7 - 1.7
15b 1.5 - 1.8 - I.S - 2
* VSE(satl
20b 2 - 2.5 - 2.5 - -
V
20b 4 - - - - - 2.5
lOb 1 - 0.75 - 0.75 - 1
15b 1.5 - - - - ,- 1.5
* VCE(satl 20b 2 - 2 - 2 - -
20b 4 - - - - - 2
30b 6 - 3 - 3 - -
ISIb
tp = 1 5 20 10 - 10 - 10 - A
nonrep.
ES/b
L= 12511H.
RSE=51 n -1.5 10 - 6.25 - 6.25 ..,. 6.25 - mJ
* Ihfe l 10 1 - 2 - 2 - 2' -
f= 1 MHz
* hfe 10 1 - 40 - 40 - 40 -
f= 1 kHz
• tr (See Fig.S) I VCC= 10 1 - 1 - 1 - 1
• ts 30 10 IC - 2 - 2 - 2 liS
* !t 10 lc - 1 - 1 - 1
R9JC 20 5 - - 0.875 - 0.S75 - 0.875 ·CIW
• In accordance with JEDEC registration data format JS-6 RDF·l. b Pulsed; pulse duration =3OOJls,
c 18 1 = -1 82 duty factor' 1.B%
140 __________________________________________________________________
POWER TRANSISTORS
2N5301, 2N5302, 2N5303

Ia COLLECTOR SUPPLY VOLTAGE (\tcI·30Y
6 ~~:~~~RATURE (TC)- 2S-C --l-I:7----l--l-.J-.l

f
"'-
!"
III
~
if OJ-!:==l:==l=±±i==±==l=t:t:J
of
~ '.k,,-~-+-~~-l-.J-.l--+---4--+~
~ -......... td
"Ii ,
~
0.01
.010 • 0100
COLLECTQR-TO-EMITTER SATURATION VOLTAGE [VCE(lutl]-V BASE-TO-EMITTER WLTAGE lYaEI-V COLLECTOR CURRENT (IcI-A
Fig. 4 - Typical saturation voltage characteristics Fig. 5 - Typical trsn.fer charscreristic, for Fig. 6 - Typical delay-time and rise-time charac-
for 2N5301, 2N5302, and 2N5303. 2N5301, 2N5302, and 2N5303. teristics as B function of collector current
for 2N5301, 2N5302, and 2N5303.
lOa ~~~ Sl..PP\..Y VOLTAGE (Vcc)-3QV

t 6 Xc/la-tO
1 4 CASE TEMPERATURE ITC'-2S-C
:!
~
" ,
I,, -..... ~
~ 0
V
~ 'f
-!I!
"~ , '~
0.1
. 0 10
Fig. 7 - Typical storage-time and fall·time charac·

teristics as a function of collector current
for 2N5301, 2N5302,and 2N5303.
141
POWERTRANmsTORs ________________________________________________~------------.----------------
2N5320-2N5323
Features:
Complementary N-P-N & P-N-P Silicon • 2N53221 P-N-P
2N5323 Complements of: 2N5321
{ 2N5320
l
Power Transistors • Maximum safe-area-of-operation curves
• Planar construction for low-noise and
General·Purpose Tvpes for Small,Signal,. Medium·Power Applications low-leakage characteristics
RCA-2N5320, 2N5321, 2N5322 and 2N5323 are double· versions of the 2N4036 with all of its additional outstanding • low saturation voltage
diffused epitaxial-planar silicon power transistors intended for features. (Technical data on the 2N2102 and 2N4036 are • High beta at high collector current
small-signal medium-power applications. The 2N5320 and shown on pages 29 and 71, respectively).
2N5321 n-p-" types are actually high-current, high·dissipation
The devices are supplied in the JEOEC TQ·39 hermetic TERMINAL DESIGNATIONS
versions of the 2N2102 with all of the salinet featuresofthat
package.
device. The 2N5322 and 2N6323, p-n-p complements of the
2N6320 and 2N5321. are actually high-current, high-power
MAXIMU,M RATINGS, Absolute-Maximum" values: 2N5321 2N5323· 2N5320 2N5322 •

• COLLECTOR·TO·BASE VOLTAGE. . VCBO 75 ·75 ·100 ·100 V
COLLECTOR·TO·EMITTER SUSTArNING VOLTAGE:
With 1.5 volts (VBE) of reverse bias .. · VCEV(sus) 75 ·75 100 ·100 V JEDEC TO-39
(RBE) = 100 n . . .. VeER(sus) 65 ·65 90 ·90 V COLLECTOR. TOoEMITUR VOl TAGE (YCE) • 4 Y
With base open · VCEO(sus) 50 ·50 75 ·75 V
• EMITTER·TO·BASE VOLTAGE. · VEBO ··5 ·7 V
• COLLECTOR CURRENT. . ......... IC ·2 ·2 A
• BASE CURRENT. .. IB ·1 ·1 A
• TRANSISTOR DISSIPATION: 10 10 10 10 W
At case temperatures up to 250 C . Figs. 2 & 5
At case tempenJtures above 250 C .. Derate linearly a[ 0.057 WIOC
• TEMPERATUBE RANGE:
Storage and operating (Junction) ...
• LEAD TEMPERATURE (Ouring soldering): - -65 to + 200
- oc
At distance2 1/32 in. (0.8 mm) from
seating plane for lOs max .
• In accordance with JEOEC registration data format (JS-6-RDF-l)

230
- oC
COL.LECTOR CURRENT Ocl-.A
Fig. 1· Typical static beta characteristics

for types 2N5320 and 2N5321.
eoLL.KTOR·TO_EMlTTER VOlTAGE (Yal- -4Y
rl~
'01
_I-'
l ~
!'--,
~IOD r'
i
~
80 t- AIIII!NT HMPUATLE (T I. ZS'C
."
4 iq.
~
I
1u 1 20 '\\\
~
!:! 2
...Z -11.1 -, -, -'"
COLLICTOR QlRRENT (Ie)- ...
-'000
III 92CS-III004RI
II:
II: Fig, 3· Typical static beta characteristics
::;)
for 2N5322 and 2N5223,
U
II: 8
~ 6
o
III
~
~ 4
o
o
2 4 6 8 10 2 4 6 8 100 2
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- V
IASE-TO-EMtTTER YOL.TAGE (VaEI-Y
'2CS-leoo'ltl
.2i:S-t754e
Fig. 4· Typical transfer characteristics
Fig. 2 . Maximum operating areas fOf 2N5320 ana ~N5321. for 2N5320 and 2N5321 •.
142 ___________________________________________________________
________________ ~~ __________________________________________________________ POWERTRANSISTORS
2N5320-2N5323
ILICTIICAL ettAIACTIIISTIC$, c... T_ _ _ (TCI - 25"C Un'." 0"'.,.'•• $,...",0<1
TEST COIIDITIDNS LIMITS

DC DC
CHARACTERISTIC Symbol Currenl Type Type Type Type
Vollage Units
V mA 2N5320 2N5321 2N5322 2N5323
VCB VCE VBE IC IB Mm, Ma •. Min. Max. Min. Max. Min. Ma'.
80 0.5
Colleclor·Culoll CUllenl: ICBO 60 - 5 ~A
W,lh base open (Ie· 0) ·80 ·0.5
.<" ·5
With bBse-emlller
Junclion reverse brased
100
75
·100
:U 0.1
0.1
·0.1 rnA
1.5
·75 ~I
ICEX I.
TC·150u C 70 .1.5 5
15 -1.5 5 rnA
·70 1.5 '5
-5
-41 1.5
-7 0 O.l
-5 0 0.1
Emlller·Culoff Currenl 7 0 -0.1 lOA
5' 0 ~.I
lEBO
-5 0 01
-4 ~ 0.5 ~A
5 0' ·01
4 ~ ·05
Collector·lo·Em IUe'
Breat<down Volta!e
'(BR:eEV
reverse blasec
.1.5 01 100 75 - V
1.5 01 100 75
ColiecloHo·EmlUel
Suslalnlng Voltage:
W,lh external base·to·
emItter resistance VCER'SUS I 100 90 65 V
'.
,RBE' -lOOn 100 90 ·65
With base open VCEOISUS' 100 0 75 50 V
·100 0 75 -)U
ColiecIOf·lo· Em'Uer VCE,sal, 500 50 0.5 0.8 V

Saillation Voltage ·500 ·50 ·0.7 .1.2
Base·lo·EIIHUer Vollage VBE
I
-I
500 l.i l.4 - .1.1 .1.4
V
·500
, I 500 30 130 40 250 -
DC Forward CUllenl
Transler .Ralio
hFE~
-4
2
·500
1000 10
- 30
-
130 10 150
-
See NOTE
-2 ·1000 10
Gain·Bandwldlh Producl 4 50 50 50 MHz

IT
·4 ·50 50 50
IMagnitude 01 comman-emilll!!.
small-signal. shorl Circuit, 4 50 5 - 5 - - - -
lorward currentlransler ralio ·Ihlel ·4 ·50 - - - - 5 5 -
11"10 MHZ)
Second Breakdown Collector
Current" 50 200 200 mA
ISIb ·35 '285 285
(With base Ililwanl biased)
Sal. Switchi.. Time:
ton 30 500 50 80 80 ns
Turn·on Time ·30 -500 ·50 laO I 100
Turnooll Time toll 30
·30
500 SO
-500 ·50
BOD
-
800 -
-
-
000 1000
ns
Th_1 Resistance:
~nctiOll·to-Cese RBJC - 17.5 17.5 17.5 - 17·5 OCIW
Junclron·to-Ambient RBJA - ISO 150 150 ISO °CIW
• In 1••oldln.1 with JEDEC '.allt'ltion dlt. formlt (JS·6·RDF·1)
• For p-n..p devlc ••• voltage and current v.lul•• r. negltlve.
• CAUTION: The IUltilnin, valt.... VCEoII"ll Ind VC!RC'''I, c Pulled; 0•• 1 nan·,.UU.,. pul ...
MUST NOT be me.lurad an I C'-VI bit... .. IS 'b i, defined ., the cUlr ••" which ltCond II_down occur•••
b Pulled; pullt durltlon" 3OO"...a, duty'fletor ::. 0.02. Junction 'orw.d \blaH 'or " ..,i,tor aperltlon In UwlctlVl ,..Ion.
__------------------~----------------------------...............----------------------143
POWERTRANSISTORS ____________________________________________ ~ _____________________________
2N5320-2N5323
..
I
3>
~
l;!
!u Fig. 6 - Typical transfer characteristics
for 2N5322 and 2N5323.
II:
~
~-o.1 .111111111111111
• • It 4 8 8 2
-I -10 -100 lIASe·fO,!MITTIR VOLT_ ('Ill - yo
COLLECTOR-TO-EMITTER VOLTAGE (VCEI--V
Fig. 7 - Typical input characterisites for
92CS-17547
2N6322 and 2N5323.
Fig. 5 - Maximum operating areas for 2N5322 and 2N5323.
........,..-,..>-1""',..
8ASE-TO-ElllnER YOI..l4GE (vse)-'¥ OOLI..ECTOIt-TO-EMITTIR YOIoT"'! tYCI':""1I
HCS-IIOOI'!f
.............
VOLTAGE C\lcl:I-Y'
Fig. 8 - Typical input characteristics Fig. 9 - Typical output characteristics Fig. 10 - Typical output characteristics
for 2N5320 and 2N5321. for 2N5322 and 2N5323.
for 2N5320 and 2N5321.
144 ______________________________________________________________
2N5415, 2N5416, RCS880-RCS882

Silicon P-N-P High-Voltage Transistors Features:
• 2N5415: p-n-p complement of
For High-Speed Switching and Linear-Amplifier 2N3440
Applications in Military, Industrial and Commercial Equipment • 2N5415: p-n-p complement of
2N3439
The RCA-2N5415, 2N5416 and RCS880, These transistors differ primarily in their • Maximum safe-area-of-operation
RCS881, and RCS882 are silicon p-n-p voltage ratings. Typical applications in· curves
transistors with high breakdown voltages, elude high·voltage differential and opera- • High voltage ratings:
high frequency response, and fast switch- tional amplifiers; high-voltage inverters; VCBO = -350 V max. (2N5416)
ing speeds. All of these types are supplied and high-voltage, low-current switching VCEO(SUS) = -300 V max_ (2N5416,
RCS882)
in the JEDEC TO-39 hermetic package. and series regulators.
-250 V max. (RCS881)
-200 V max. (2N5415)
MAX!MUM RATINGS,AbsoIUI8-MBximum VslUBI: 2N5415 2N6418 RCS880 RCS881 RCS882
-150 V max. (RCS880)
·COLLECTOR·TO·BASE VOLTAGE •••.••• , ••• , •• VeBO -200 -360 -260 -360 V
COLLECTOR·TO·EMITTER SUSTAINING VOL.TAGE:
With external ba.·to-emltter r,.'tance (RSE' • 50 n .. VCERlsus) -360 -350 V
• Wlthbl.. apen . • . . . . • . . • . . . . • • . , VCEolsul' -200 -300 -160 -2eo -300 v
*EMITTER·TO·BASE VOLTAGE .•....• , . , •....• Veaa -4 -8 -4 -8 V TERMINAL DESIGNATIONS
·COLLECTOR CURRENT .•. , . . . . . . • . . . • . . • IC -I -I -I -I -I A
,f3,,,~
*BASE CURRENT •.•••••• , •••••••• , ••••• , • 18 -0.6 -0.6 -0.6 -0.15 -0.6 A
-TRANSISTOR DISSIPATION: PT
At CIII tlmperatu",. up to 2SoC . . . . • . . . . . • . . . . 10 10 1 .• 1.6 1.6 W
At case te":'PItI'atur.. above 25°C . . . . . • • . . • . . . . . - - - - a.ratellnearly to 2000C _ __
At ambient temperature. up to sOOC ••••••.•••••. 1 1 0.7S 0.76 0.75 W
At ambient 18mperltur.. above sOOC ..••••.•••.• Derate linearly at 8.7 e.7 6 6 mWtC
92CS~27512.
ItTEMPERATURE RANGE:
ItL:~~~~~~:~:: ~::r~::;d~'I~g;:' ........ .

At distance> 1/32 In. (0.8 mm) from IHtlng plane for
--------8510+200 _ _ _ _ 'c JEDEC TO-39
10.mllX . . . . . . . . . . . . , •.•..•••...... - - - - - - - 2 6 6 - - - - - 'C

1t2N.s.rI.. types In accordance wl1h JEDEC raglatretlon datil format (JS.Q RDF-81
COl.LEC~If.TO-E.'TTfff VOLTAGE: (VCEI =.ID v

\00
...1
!
90
70
1/
,~
",. 1'-0
i
:
~ f-"'"
'$I.:e.~'\v·
",.
rr
l-
40 r- r- .,....'
I- ",,,«2 ~ ....
l..,.-
i :..
~
~
f--1'" I II
j...j...H-- II I \\'
, IIII ,
," ,"
II ,I " , ,t\ , ,
COLLECTOR CURREMT (1,1_ .. A
Fig. 2- Typical dc beta characteristics for all

rVpes.
COLLECTOR -TO-EMITTER VOLTAGE (Vce1- V

92CS·I7668RI BASE.TO·EIIITTER VOLTAGE IVSEI-V
Fig. '-Maximum safe operating areas for 2N5475 and 2N54'6. Fig. 3- Typical transfer characteristics for all
types.
____________________________________________________________________________________ 145
2N5415,2N5416,RCS880-RCS882
ELECTRICAL CHARACTERISTICS. c.. TemPIWrure (Tc) ·25"C
'.
TEST CONDITIONS ~ LIMITS .
2N~
CHARACTERISTIC VOLTAGE CURRENT
SYMBOL Vdc mAde 2N5415 RC: ;aBO RC:IBB1 RmBB2 UNITS
VCB VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MI.N. MAX. MIN. MAX.
-260 0 - - - -60 - - - - - -60
ICEO -150 0 - -60 - - - - - -60 -' - J.IA
-100 0 - - - - - -60 - - - -
* ICBO
-2BO - - - -60 - - - - - -60
J.IA
-176 - -50 - - - - - -60 - -
-300 1.6 - - - -60 - - - - - -60
ICEV -200
-160
1.6
1.6
. - -50 - - - -
-100
-
-
-50
-
-
-
-
-
J.IA
lEBO 8 0 - - - -20 - - - - - -20 J.IA

* 4 0 - -20 - - - -30 - -20 - -
-10 -6ob - - 30 120 20 160 - - - -
* hFE -10 -6ob 30 160 - - - - - - - -
-10 -36b - - - - - - 20 - 20 -
VCEO(SUI) -60 0 -200s - -300a - -1500 - -2600 - -300a - V
VCER(SUS)
(RBE)-500
-60 - - -3600 - -'- - - - -3601 - V
VSETsatr -10 -sob - -1.6 - -1.5 - -2.6 - -1.6 - -1.5 V

VCE(I8t1 -5ob -6 - -2.6 - -2 - -3.6 - -3 - -3 V
hf••
* (at 1 kHz)
-10 -6 26 - 25 - - - - - - -
* Ihfel
-10 -10 3 - 3 - 3 - 3 - 3 -
(at 5 MHz)
* Re(hlel
(at 1 MHz)
-10 -6 - 300 - 300 - - - 300 - 300 0
* Clb
6 0 - 76 - 76 - - - 76 - 75 pF
(at 1 MHz)
• Cob
-10 - 16 - 15 - - - 15 - 16 pF
(at I MHZ»
ISib -100 -100 - -100 - - - - - - - ,
tp • 0.4 s non rep. -76 - - - - - - -100 - -100 -
,
rnA
tp • 0.2 • nonrep. -76 - - - - -100 - - - - - .,'
R8JC - 17.6 - 17.6 - 23.3 - 23.3 - 23.3 "C/W

• 2N-Serl.. typal In accordance with JED EC . a CAUTION: ThalUltalnlng voltagH VCEO(IUS b Pulaad: Pulse. 300 jJI; duty factor <; 2% •
registration data format (JS-8 RDFoII). and VCER(SU') MUST NOT b. measured on a
curve tracer.
CCIIJ.ICTaIt..TQ.UmI!lt YOLT. (Val-.lD'
. CAII . . . . .,T1I.. "O·1I'(
••
i.
I.
I: ,...., ./
.
Fig. 4-TvPIceI ool/.cIONo ..mltter tiaruretlon
_1 I 1.11 I • I !IIQ
CGLLICTOIt QlItIllNTftcl_ IlIA
Flf/o 6- Tvplce/ fl8ln-lwldwldth product for 8/1

t
.......'.- Fig.
COLLECTOR CURRENT Itel-Ill"
6-Tvplce/ rum-on tlmtI chtIremr"tlc fo

"C'~I"leIU
rtOIlJlfIII for 8/, types. cypu. 2N6416 Bnd 2N64'S.

146 ___________________________________________________________________________________________
POWER TRANSISTORS
2N5415, 2N5416, RCS880-RCS882
c
E
1-10008
~
;::
Z
OJ
0:
0:
1l
~
u
OJ
::l
8
. .. .. eo
COLLECTOR CURRENT 11el-",A
Fig. 8- Typical storafl8-tifTl!l charactrlrlstic

for 2N5415 and 2N5416.
• 8 • 8 • 8
-I -10 -100-150 -1000
COlLECTOR-TO-EMITTER VOLTAGE(VCE)-V 92CS-24685
Fig. 7-Maximum safe operating areas tor RCS880.
-1000
COLLECTOR CURRENT 1I,gI-rnA

c .ZCS-ITIUI
E
I Fig. 10-TypiCIII fall-time charactrlristic for
~
I-
2N54 15 and 2N5416
Z
"'a:a:
:::l
u -100
a:
~
:il
..J
..J
0
U
-10
-I -10 -100
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V COLLECTO" CURRENT C1cl- ....
92CS-24693RI
Fig. ,,-Typical SBturatrld switching time. for
Fig. 9-Maxlmum safe operating areas for RCS881 and RCS882. RCS880, RCS881 and RCS882.
_____________________________________________________________ 147
2N549~ 2N5491. 2N5492, 2N5493,2N5494, 2N5495,2N5496, 2N5497

FEATURES
Hometaxial-Base, Silicon N-P-N • Low saturation voltage-
Vee(sat) = 1 V max. at Ie = 2 A (2N549O, 2N5491)
VERSAWATT Transistors =
I V max.
= 1 V max.
at
at
=
Ie 2.5 A (2N5492, 2N5493)
Ie = 3 A (2N5494, 2N5495)
= 1 V max. at Ie = 3.5 A (2N5496, 2N5497)
General-Purpose Types for Medium-Power Switching and Amplifier Applications in
• VERSAWATT package (molded silicone plastic)
Military, Industrial, and Commercial Equipment • Moxim'llm safe-area-af-operation curves specified for
DC and pulse operation
RCA-2N5490. 2N5491. 2N5492. 2N5493. These plastic·package power transistors differ
2N5494, 2N5495, 2N5496 and 2N5497' in voltage ratings and in the currents at which
are hometaxial-base silicon n-p·n transistors. the parameters' are controlled.
They are intended for a wide variety of "Formerly RCA Dev. Nos. TA7317. TA7318.
medium·power switching and amplifier appli· TERMINAL DESIGNATIONS
TA7315. TA7316. TA7313. TA7314. TA7311.
cations, such as series and shuni regulators TA7312, respect.vely.
and driver and output stages of high-fidelity
amplifiers.
Types 2N5491, . 2N5493, 2N5495, and 2N·
5497 have formed emitter and base leads for
insertion into TO·66 sockets. Types 2N5490.
2N5492, 2N5494, and 2N5496 are elec-
trically identical to the 2N5491. 2N5493. BOTTOM VIEW 92CS-21SI9
2N5495, and 2N5497 but have straight leads.
JEDEC TO-220AB
2N54.U
2N5491 2N5490 2N5494
Maximum Ratings, .. \bso/u/C'...MlIl'imum \ ·lI/ue .... : 2N5494 2N5492 2N5496
2N5495 2N5493 2N5497
2N5492 2N5496
('OI.I.~;("TOR-TO-B,\SE VOI.TAm: . . . . . . . . . . \'(,110 (ill iii !to \.
COLI.~:CTOR-TO-E~llTn:R Sl'STAISI:-;<: vO!:rA(:!'::
W.th -1.5 volts (V HE ) ofr£'ver8t' hi us . . . . . . . . . . . . \'('I.:\,lsus) jill iil BO \'
With l'xt~rnnl basE'-ln-I'mittt'r rt'FliFllnn('(> If{HI.:1 100.,1. \'('j':HIsUH) ;''1{1 W'1 ~o \"
With bus(' oppn . . . . . . . . . . . . . . . . . . . . . . . . . . . . "('I':O(sus) 4(1 ail ;0 \.
EMiTTER-TO-BASE "·O!.TAm:. . . . . . . . . . . . \'I-alO ;, \.
:OLL~:C-TOR CURRENT. . . . . . . . . . . . . . . . .. . . .. . 1(' A
BAS~; CURRENT . . . . . . . . . . . . . . . . . . . . . . . . . .. . III A
TRA.'1S1STOR DI$IPATION: . . . . . . . . . . . . . . . . . .. . PT
At,CRB!! tempt"l'atl.l'cfJ up to 25C)C •••. , . . . . . . . . . . . ;lO ;)0 ;'0 II BOTTOM VIEW 92CS-21520
At ambiE-nt t(>mpcrnturc8 up to :l5()(' . • . . . . . . . . . . . . l.~ l.~ I.M II"
At ('8RE' temperaturP8 arov(' 2S()C . . . .' . . . . . . . . . . . Upratl' hnt·url.\' at 0.4 W °C. or SP(' Figs. 1 & 2
At ambient templ"l'lttureA .. hoy" 25"C . . . . . . . . . . . . . . nt'rnit· lin('url~' at 0.0144 \\' °c
JEDEC TO-220AA
n;MPERATUR~; RANm:: 2N5491 2N5495
StorRie" Ope-ratioR (Junc:tinn) . . . . . . . . . . . . . . . . . 2N5493 2N5497
L";.\l) T ..;MP..:RATlJH. ..; (Durin" Snldl'ring);
"tdistance Z l/Kin.{3.17mm) frum('us(' fur Ills max ....
-
CASE TEMPERATURE I'tc}·25- C COLLECTOR MILLIAMPERES {IC' -100

~ , CASE TEMPERATURE ITc}' 25-(
WITH INCREASE IN TEMPERATURE}
g. VeER (2N5496 a 2N5497)
~ : Ic MAX (cONTINOUSI i~
ZI
7 I IIII I IIII Tt-
~j 70 I IIII I IIII I I r--.. VeEO
~o VeER (2N5492 8 2N~93) I
~~ 6
!::~ 60
I 1111 I 1111 11
~54~4Iall~"~5ll
~o; "- VeEO
g~ 5
~~ ~o (2N5490 a 2N5491l 11" I

4' I
~ 40 II IIII I I111 I I
1111 I 468
1111 2:I 488
I
VeEa
I
3
II.HlI0125111115_ 2468 2: 2: 468 2: 468
'00 00 3
EFFECTM CASE lEW. 01 CASE ,EW.(TEF' GR 'c)-IC COLLECT~-TO-EMITTEA VOLTS (Vee' SASE-To-EMITTER RESISTANCE {RBEl-OHM~2:CS_14982:RI
Fig_ 1 - Doratlng cur.o lor types 2H549O through 2H5497 Fig. 3 - Collector-to-emitter sustaining voltage charoc.
Inc/u./ve. Fig. 2 - Maximum operating areas lor types 2HS490
through 2H5497 ·;nclus·ive. terlstles lor type. 2H5490 through 2HS497 inclusive.
148 ________________________________________________________________
2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496. 2N5497

ELECTRICAL CHARACTERISTICS, CssII Tsmpersture (Tc;I- 2fl'c Unl... 0 - ' SpecIfied
TEST CONOITIONS LIMITS
OC Types Types Types Types

Characteristic Symbol Voltage OC 2N5496 2N5494 2N5492 2N5490 Units
(V) Current (A) 2N5497 2N5495 2N5493 2N5491
VCE VeE 'C Ie Min. Max. Min. Max. Min. Max. lIin. Max.
85 -\.5 1
Collector-Cutoff Current 'CEY 55 -\.5 1 rnA
With base-emiller junction 70 -1.5 1
reverse biased 85 -\.5 5
tCEV 55 -1.5 5 rnA
(T C = 150oC) 70 -\.5 5
70 0.5
tCER 40 0.5 2 mA
With external base-to-emitter 55 0.5
resistance (R BE ) = 100 rl 70 3.5
'CER 40 3.5 5 mA
(TC = 150OC) 55 3.5
Emitter-Cutoff Current 'EBO -5 1 I I I mA
4 .5 20 100
4 3 20 100
DC Forward-Current Transfer Ratio hF{ 4 2.5 20 100
4 2 20 100
Collector-Ia-Emiller Sustaining
Voltage: VCEQ(susf 0.1 0 70 40 55 40 V
With base open
With external base·to-emitter 0.1 80 50 65 50 Y
VCER(susf
resistance (R eE) = 100 rl
With base-emitter junction VCEV(SUS)c -1.5 0.1 90 60 75 60 V
reverse biased
4 3.5 1.7
4 3 1.5
Base-to-Emiller Voltage VB{ \.3 V
4 2.5
4 2 1.1
3.5 0.35 1
Collector·t.-Emiller VCE(sat)C 3 0.3 1 V
Sallration Voltage 2.5 0.25 1
2 0.2 1
Gain-Bandwidth Ploduct fT 4 0.5 0.8 0.8 0.8 0.8 MHz
Sat. Switching Time: 3.5 0.35" 5
Turn-On ton VCC = 30 3 0.3" 5 "s
2.5 0.25" 5
2 0.2 5
3.5
'3
0.3t
O.
15
15
Turn-Off toll Vee = 30 "s
2.5 0.25& IS
2 0.2 15
Thermal Resistance:
Junction·ta-Case 8J•C 2.5 2.5 2.5 2.5 OC/W
. Junction·ta-Ambient 8J-A
tt 182 .,.Iue (t.. n~ff base cwr..t). C

70 70 70 70 °C/W
Pulsed, pulse durllion ,. 300 ..... s, due, fKtar ...011.
_____________________________________________________________________________________________________________________________ 149
2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497

COLLECTOR-tO-EMITTER VOLTS iVCI!}i4 COLLECTOR-lO-EMITTER VOLTS {VCE1.4 COLLECTOA1-TO-EMITTER VOLTS NCE)o4
''0
~_IOO
II ,- ,
~i
e- l - U~, ,
b~
~.
80
'IT~>$'~ < .f>- r--\
~ffi 60
fr~ ~.
5~ e- l-
40
<~
~
'0 ~
0.001 2 .. 68.01 2 .. 6'01 2 ....

COLLECTOR AMPERES tiel
00<>
, , .I , , . , , ..
6 0.1
COlLECTOR A.MPERES lIel
, , 2 468
Q'
2
COL.LECTOR AMPERES IIc'

4 68 , 4 68 10
Fig.4 • Typical static b.to cliaracte,l.tlCl '01 type. Fig.S ~ Typical static beta characteristics lor fypes Fig.6 ~ Typical static b.ta characteristics lor types
2N5490 ,hrough 2N549ll.clusl••. 2N5494 onJ 2N5495. 2N5496 onJ 2N5497.
COLLECTOR-tO-EMITTER VOLTS {IICE}-4

CASE TEMPERATURE (Tc1'25"C
L-~~,-t,~,~--t,--~,-1,~,~o},--~,--~·~·~,+--"
YOLTS (VeE' 92C5-14977
COLLECtOR AMPERES (lcl
Flg.S • Typical output charact.ristics 'or type. 2MS"'4 F;g.9 .. TypicGI output characteristics lor types 2H5494
Fig.7. Typical gain.bane/wid,,, product lot,types 2HS490 through 2N5497 Inclusi ••. anJ 2N5495.
through 2H5497 inclusive.
COLlECTOR- -EMI • YOLTS , .. ~

COLLECTOIt-TO-EMITTER VOLTS·tvcE'-4
'00
~ !
t:
000
a-
;400
If
~
~
~ 300
i 200
~
~
: 100
0.5 • ..5 o· 0.5 I 1.5

BASE-TO-EMITTER VOLTS (VSEI IASE-TO-EMITTER VOL.TS I ..... '
'2C$-14"7
Flg.10 ., Typical output characteristic. lot type. 2N54fO Fi,.ll - Typicol Input charact.ristics lor types 2H5494 Flg.12 . Typical input charGcteristics lor types 2H5490
through 2N549l Inc Ius I... through 2H5497 ·inclusive. through 2N549l Inc/u.I ••.
COLLECTOR-T'O-EMITTER VOlTS (V Ja4
a.s I 1.!5 05 I I.S

BASE-tO-EMITTER VOLTS (VaE) 92CS-14,.7 BASE-TO-EMITTER VOLTS (VeEI BASE-TO-EMITTER VOL.TS (VBEI
Fig.'3· Typ;coltrons'erchr.rocter;s1;cs/or types 2H5494 Flg.J5 • TypicGI trans'.r characteristics lor types
Fig.14 -I Typical trans'ercharacteristics lor types 2HS490 2N5490 through lN5497 Inc lu.'•• ,
through 2HS497 inc Ius Iv •.
through 2H5493 indusive.
150 ___________________________________________________________________
POWER TRANSISTORS
2N5515, 2N5518
Features:
High-Current, High-Power, Hometaxial- • Maximum safe-area-of operation curv••
• IS/b-limit line beginning at 26 V
Base Silicon N-P-N Transistors • HI~-current capability

• Low saturation voltage at hi'" beta
For Linear and Switching Applications in • High-diuipation capability
Military, Commercial, and Industrial Equipment • Low thermal resistance
RCA-2N55i5 and 2N557S- are high-current, high-power, linear regulators, power-switching circuits, series· or shunt- TERMINAL DESIGNATIONS
hometaxlal-base silicon n-p-n transistors. They differ in regulator driver and output stages, dc-to~c converters, in-
maximum voltage and current ratings. verters, control circuits, and solenoid {hammer)/relay drivers.
These power transistors are intended for a wide variety The high-current capability (100·A peak) makes these types
of high-current, high-power linear and switching applications particularly suitable for' circuit designs that now require
such as low- to medium-frequency amplifiers, switching and several low-current types connected in parallel.
They are supplied in the Modified JEOEC TO·3 package
• Formerly RCA Dev. Nos. TA7016 and TA1017, respectively with 0.060·ln. Dia. Pins.
MAXIMUM RATINGS, Absolute-Maximum VaJuas:

2N5576 2Nij578
·COLLECTOR·TO·BASE VOLTAGE 70 Modified JEOeC TO·3
VCBO 90 V
·COLLECTOR·TO·EMITTER VOLTAGE:
With base open, sustaining VCEO(sus) 50 70 V
NOTE~ CURRENT DERATING AT CONSTANT
(RBEI- 10 n & V BE - -1.5 V 70 90 V VOLTAGE APPLIES ONt..Y TO THE DISSIPATION
VeEX LIMITED PORTION OF' MAXIMUM'OPERATING'
'EMITTER·TO·BASE VOLTAGE 8 8 V AREA CURVES ~FIGS 1,4100 NOT DERATE
VEBO
'COLLECTOR CURRENT (Continuous) IC 80 60 A [:u~::~C~~IEgO~~I~~~~:lOR 1C MAX.
'COLLECTOR CURRENT (Peak) ... 100 80 A
*8ASE CURRENT (Continuous) .. IB 20 15 A
'TRANSISTOR DISSIPATION: PT
At case temperatures up to 26°C and VCE up to 26 V 300
...
300 W
At case temperatures of 100°C and Vce of 25 V ... 150 150 W
r:
At case temperatures up to 25°C and VCE abo've 25 V See Fig. 2
At case temperatures above 25°C and VeE above 25 V See Figs. 1 & 2
'TEMPERATURE RANGE:
Operating (Junction) .... . -66 to 175 'e
Storage ............. . -65 to 200 'e
·PIN TEMPERATURE (During Soldering): 2~ ~O 100 ,25
CASE TEMPERATURE fTCI-·C
At distance> 1/32 in. (0.8 mm) from case for 10 s max. 230 'c
*'n accordance with JEDEC registration data format JS·6 RDF·1.
Fig. 1 - Dissipation derating curves for
both types.
~ COL.LECTOO-To-EMITTER VOLTS (VCEI.4
i 100 J _
~.:.~
I"or--"0 ~
r-.<:I:~~ftI~t-tiif~-I-+tt--+-tTI
~('
'ii!ii
I
~u
i
• :!
VI 2 '" '0.' 2 "6' :I; '" '10
•
w COLLECTOR AMPER£S (lcl
a:
w
0-
lE
Fig. 3 - Typical dc beta characteristics
,0 !::!
'a:" oJ for2N5575.
..
0
U CASE TEMPERATURE (Te) = 25°C
«
::Ii
~
W
-'
-'
0
(FOR Te ABOVE 25°C, DERATE LINEARLY ';2 J
z ;- 120
COLt..ECTOR-TO-EM1TTER '10t..lS IYCEI.4
U
~
II:
~
100
P;f ~o
I 2l: -
.'....
eo
~ ~
.o~ '\t:",_<-!,<
i .o~
.. '?,; ~
l!It.'\~ \
I 20
.'<
- -~"I ,
-'" \
. . . ..
....
10 g
COLLECTOR-TO-EMITTER VOLTS (VeE) 0.01 ~ , 10.1
" "I " ",0 6 "0
COt..l.EClOR AMPERES IIC'
92CS-I'085A 2
Fig. 4 - Tvpical dc beta characteristics

Fig. 2 - Maximum operating areas for both types. for2N5578.
151
POWER TRANSISTORS
2N5575, 2N5578
~LECTRICAL CHARACTERISTIcs. At ~ r.""..,.". (TcI- 2fl'c I./n,.. ~$ptJcIfW
TEST CONDITIONS LIMIT!! II
v.--Vdc
eu..-
Ado ZHIII75 2N1178 UNITS r-- .......
II
2N5578
f-
Mo •• - .
Ie Min. Mo", Min.
VCE VaE la
r- VCEO(lu,)
With bI....emitt.r ICEV 60 -'.5 .0 mA

junction reverse-biased 60 -'.5 .0
With l)IItel'MI base-emitter ICER 50 .0 mA N5575 I-
resistance (R BE )o;10 n 70 '0 ~ j.' 'j'-f-
I VCEO'IU.)
With bls.oemltt., 60 -1.5 20 mA
junction revtrte-bilsed
ICEV
ITC'·50o CI 60 -'.5 20 II I I
10 I: " . '10 2 !! " I '10 :2 " . '10 :2 " 6 '10 5
EXTERNAL IASE~TO-EMITTER RESISTANCE IRIEI-A
emitter Cutoff Current lEBO -8 .0 .0 mA
9ICS·I5Ofl"!!
Collector·lo-Emitter VIBRICEO 0.2 0 50 70 Fig.5 - Collector·to-emitter sustaining

Breakdown Voltage voltage characteristics for both
h FE8 ......
DC Forwlfd Current
Transfer Ratio
Collector-Io-Emitter
3
4 .60' '0 40
.0 40 types.
Sustaining Voltage: VeEoI",.1

ISee F....' Sond 61
With bese open 0.2 50b 70b V
With ba....mitter
ju netion rever.se·bi.sed. VCEX lsus) -1.5 70b gob V
RBE=·on
Blte-Io-Emitter Voltage
VBE•
... 2.5 V
Collector-la-Emitter Veelslt)' ...

60'
4 1.5 V
Saturation VoU.ge
Base-to-Emitter
Saturation Voltage
VBE lsat)8 ...
60'
60'
6
4
6
2.5 V
Output CePIPCitance: (Vea· 10 V) Cob 2000 2000 OF

COLLEC1roR-·TO-·.MITTE. VOLTS-IVeE'
Input Capacitance Cib -0.5 4000 4000 OF
Magnitude of Common- Fig. 6 - Typical output characteristics for

Emitter. SmalI·Signal, 2N5575.
Short-Circuit Forward
Current Transfer
Ih'·1 .0
Rali. H=0.2 MH,'

Saturated SWitching 40 10
Time !Vee" 30 VI:
Turn~n lime 'ON 60 .5
Turn~ff time 'OFF 40 10 .'
60 15
ForMrd·Bill
Second·Bre.kdown 25 .2 A
'SIb '2
'CollftCtor Current h = 1 II
Second Breakdown
Energy IWIth base -, 5 0.8 0.8
reverse·blased, ESlb
R QE ·'01l.l·33mHI
Thermal Resistance: 0.5 0.5 °CIW
(Junctlon·to·C.sel RfJJC COf..LECTOR-TO-EMITTER YOlTS (VeE)
9:2CS-le068AI
.In .ccordlnal wilh J(OEC rellll,.lo" ddII tOl'fNt JS.e RDF·'.
~Md: pulM dUf8tkln S. 310 ~I, dutj tlCtOr-G.02. Fig.' 7 - Typical output characteristics
bcAUTION: The ....lIIlnlnll vol1lllJlI vCEO'IY,hnd YCEXfIY. MUST NOT be "....,ed on, ClArw t.-.cer. for2N5578.
..
-7 -6 -5 -4 -3 -2 -I
BASE-lO-EMITTER VOLTS IV.'
tlCS-IIOST"
Fig. 8 - Reverse-bias second-breakdown

characteri#tics for both types.
152 ______ ~ ________________________________________________________
POWER TRANSISTORS
2N5575,2N5578
o ~ ~ u ~. U
BASE-TO-EMITTER VOLTS (V BE ,

2N5575.
10 00.511.522.:5 3.544.5
BASE-TO-EMITTER VOLTS (VBE'
COLLECTOR-TO-EMITTER VOLTAGE (VCEI'-V
92CS-20919 Fig. 11 - Typical transfer charactells<lcs
for2N5578.
Fig. 9 - Maximum operating areas for both types at T C = 1000 c.
60
8
II
1 100
~ !O
~ 20
•• '0
o O.S I 1.5 2 0.5 I 1.5 2

COl.L.ECTOR-TO-EMITTER SATURATION VOLTS [VeEllCltI] COLLECTOR-TO-EMITTER SATU!~ATION VOLTS [VeE lion]
Fig. 12 - Typical saturation voltage Fig. 14 - Typical saturated switching

Fig. 13 - Typical saturation voltage
characteristics for 2N5575. characteristics for both types.
characteristics for 2N5578.
__________________________________________________________ 153
POWERTRANSISTORS ______________________- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
2N5632, 2N5633, 2N5634

Silicon N-P-N' Epltaxlal~Base High-Power Transistors
Rugged, Broadly Applicable Devices ,.eatures:
., Low saturation voltages
• Maximum safe·area-of-oparation curve.
The, RCA·2N6632, 2N6633 and 2N6634 are These devices differ in maximum voltage • Hermetically s..led JEDEC TO·3ITO·
epitaxial·base silicon n·pon transistors in· ratings. They are supplied in JEDEC TO· 204MA package
tended for a wide variety of high'power, 204MA hermetic steel packages. • High gein at high current
high·current applications, such as power·
switching circuits, driver and output stages
for series and shunt regulators, dc-to·dc con· Applications:
verters, inverters, and solenoid (hammer)1 • Series and shunt regulators
relay drivers. • High·fidelity amplifiers
• Power'switching circuits
MAXIMI,JM RATINGS, Absolute·Maximum Values:
2N5632 2N6633 2N6634 TERMINAL DESIGNATIONS
: VCEO ...••.....••• ; ........••.•.•..... 100 120 140 v c
~ f~~:::··:.::///-:: '0
100
________ 120
7 ______140
__ V
______ _________
~10
V
A
_______ 16
_________ 6 A
A
• PT ________ 160
AtTC ~26oC .•.••••••••••••••••••• ______ 0.867 _______ w t!tS-l~l.
At Tc::> 26°C .....•...• derate linearlv WJOC
: it:""6· :t';i32 ·i~: ;;.58· ±0:8 ~';'i· ..... .

from case for 10 • . .....•........•...•
_____ -66 to 200
_ _ _ _ _ 235
°c JEDEC TO·204MA
II 110 11 100 125 1110 111 200

CASE TEMPERATUfIE {TC)-·C
NU-l_
Fig. 2 - 'CurrtJntd..atingcurve for all type•.
..
~...,: COLLECTOR';' TO·EMlTTER VOLTAGE lVeEl-! v I--
i 100•r--1.~-
2
~
~
! .
z
.•_ ~ "'U~~
••~1~'"
C ,'fel-
"'
l; •
ii ••
i : ...
iii.
0.01 • • • •• • •
O'AOLLICTOR cL.tRINTeJ:cl.!.o...
II
• • II
'00
tlCI-aOI"
Fig. 3 - Typical de beta chllfllCtarlstiC$ as a function
COLLICTOR-TO-EMITTEII v.oLJAGlI"c~-V _11'_ of collector t:U"ant fo, all ty,...
Fig. 1 - Maximum o".atl", a/VI for all typas.
154 __________________________________________________________________
_______________________________________________________________________________________ POWERTRANSISTORS
2N5632, 2N5633, 2N5634

ELECTRICAL CHARACTERISTICS. At Case Temperature TC = 25 0 C
Unless Otherwise Specified

CHARAC· VOLTAGE CURRENT
2N5632 2N5633 2N5634 UNITS
TERISTIC Vdc Adc
VCE VeE IC Ie Min. Max. Min. Max. Min. Max.
100 -1.5 - - - 1.0 - - - -
• ICEX 120 -1'.5 - - - - - 1.0 - -
140 -1.5 - - - - - - - 1.0
mA
100 -1.5 - - - 5.0 - - - -

TC" 15O<>C 120 -1.5 - - - - - 5.0 - - Fig. 4 - Typical saturation vo/rage characteristics
140 -1.5 - - - - - - - 5.0
fora/l type••
50 - - 0 - 1.0 - - - -
• ICEO 60 - - 0 - - - 1.0 - - mA
70 - - 0 - - - - - 1.0
ICBO IE ~ 0 100 - - - - 1.0 - - - -
VCB=Rated VCB 120 - - - - - - 1.0 - - mA
140 - - - - - - - - 1.0
* lEBO - 7 - - - 1.0 - 1.0 - 1.0 mA
* VCEO(sus)b - - 0.2 0 100 - 120 - 140 - V

"l 5 25 lOU "lU ISU 15 6U
* h FE 8
2 - 10 - 5 - 5 - 5 -
* VBE a 2 - 5 - - 1.5 - 1.5 - 1.5 V
7.5 0.75 1.0 1.0 1.0
* VCE(sat)a V
- '- 10 2.0 - 2.0 - 2.0 - 2.0
* fT f = 0.5 MHz 20 - 1 - 1 - 1 - 1 - MHz
* hfe f = 1 kHz 10 - 2.0 - 15 - 15 - 15 -
* VBe(sat) 7.5 0.7.5 - 2.0 - 2.0 - 2.0 V
* Cobo f - 0.1 MHz

lOC - 300 - 300 - 300 pF
Ie = 0
ISlb 50 3.0 - - - - -
tp = 1 s nonrep. 45 - - 3.33 - - - A
IASi,-TO-EMITTER VOLTAGE IVIE)-V
92C9-30148
40 - - - - 3.75 - Fig. 5 - Tvpical input characteristics for all types.

R9JC - - - - - 1.17 - 1.17 - 1.17 OCIW
a Pulsed; pulse duration ,;;;; 300 1'$. Duty factor ,;;;; 2%.
b CAUTION: Sustaining voltage. VCEO(sus) MUST NOT BE measured on a curve tracer.
BASE-TO- EMITTER YOLTAGE (v. .-v 92«:$-50149
Fig. 7 - Typical saturated-switching tim.

Fig. 6 - Typical transfer characteristics for a/l types.
for a/l typos.
____________________________________________________________________________________________________ 155
POWER TRANSISTORS
2N5671, 2N5672
Silicon N-P-N Power Transistors Features:
• Maximum Safe.Area.of.Operatlon Curves •••
ISlb limit line beginning at U V
High·Current, High·Speed, High·Power Types for Switching and • Fast Turn·On Time ••• ton = O.5~s max. at IC= 15A
Amplifier Applications • High-Current Capability •••
hFE' VeE('.'), VaE(.al), & VaE m•••• rod al le= 15A
RCA Types 2N5671 and 2N5672'" are epitaxial silicon MAXIMUM RATINGS, Ab.o/.,.·M.xim.m V.I••• : • Low VeE(.ol) = 0.75 V max.
n-p-n transistors having higb current am high power
*COLLECTOR-TG-BASE 2N5671 2N5672
• H;gh P T = 140W mo ••• 1 Te = 25· e
handling capability and fast switching speed. The
2N5672 is similar to the 2N5671 except that it has high- VOLTAGE. VCBO ••••• • • • • • • • • • •• 120 ISO V
er voltage ratings and lower leakage currents. These COLLECTOR·TD-EMITTER SUSTAINING
devices are especially suitable for switching-control VOLTAGE: e
'~
amplifiers, power gates, switching regulators, power- With base open, VCEO(sus), • • • • • • •• 90 120 V
With external base--to-emitter resistance
switchingcucuits, converters, inverters, control circuits.
(RSEI !5 50 n, VCER(sus) • • • • • • •• 110 140 V
Other recommended applications included DC-RF amp- With external.base-t<Hlmitter resistance
lifiers and power oscillators. n
(RSEl !; 50 lit VSE '" -1.5, VCEX(sus) 120 150 V
They are supplied in the JEDBC TO·3 hermetic steel *EMITTER-TO-BASE VOLTAGE,V EBO • •• 7 7 V
package. * COLLECTOR CURRENT. IC ••••••••• 30 30 A
*BASE CURRENT. lB' • • • • • • •• • • • • •• 10 10 A
"'Formerly Dev. Types TA7323 and TA7323A. respectively *TRANSISTOR DISSIPATION, P T : JEDEC TO·3
At case temperatures up to 25° C
and VCE up to 24 V ••••••••••••• 140 140 W
At case temperatures up to 25° C
and VCE above 24 V • • • • • • • • • • • •• See Fig. 1
At case temperatures above 250 C
and VCE above 24 V ••••••••••••• See Figs.l&2.
* TEMPERATURE RANGE:
Stcxage & Operating (Junction) •••••• -65 to +200 °c
*PIN TEMPERATURE <During Soldering)
At distances ~ 1/32 in. from seating
plane for 10 8 max •••••••••••••• °c
·In accordance with JEDEC registration data format (J8-a, RFD-U
EFFECTIVE CASE TEIf'. OR CASE TEIIP.(TEfF ORTCI-'C

Fig. 2· Dissipation derating curves for
types 2N5671 and 2N5672.
COLLIECTOR-TO-EMrr~R VOLTS (VCE:loJ
100
• CASE TEMPERATURE ITCI'25O,CJ,
IFOR TC ABOVE 25°, DERATE INEARLYI 240
• I I zoo
1
• lCMAX. Ii...
30
(CONTINUOUS) 1~160
ij2 ~tJ:itI' ...... .'-
~~<'>
,,~ ~OO
~O
....
II' r-~
2 "{).. "
I.~~,J'" \.
......
4-.5'.1}", /O~ r'\
~.,.
8~ cb 8C r-'
• ~ ,,-
if;;.., -..\.
10
-
.- . . ... . .
/01-, ,
~ • (~)J\ \ .s,
...'" •
.....
• ''<io 4
0:
4
<"0i\\ 1\ 1\
0.0'
COlLECTOR AMPERES tIcl
'"
«
0: ~,~\
Fig. 3· Typical de beta characteristics
for types 2N5671 and 2N5672.
...
0
2
...u
oJ
~\
oJ
0
u
I
l\ [\\
• ~
•
4
l\ I--VCEO MAX.'120 V
1\ 12N56721
2
VCEO MAX.' 90 V
0·1
"j12N56711 - t- -
• • 10
• • • 100
2
• •• 1000
COLlECTOR-TO-EMITTE"R VOLTS (VCE) 92CS-I~650 Fig. 4 . Typical transfer characteristics
Fig. 1 . Maximum operating areas for types 2N5671 and 2N5672. for types 2N5671 and 2N5672.
156 ____________________________________________________________
POWER TRANSISTORS
2N5671, 2N5672
ELECTRICAL CHARACTERISTICS, C•• e Tempe,.'u,e (Tel = 2Soe Unl... O.b.,,,I•• $poemoJ

DC DC
Type Type
CHARACTERISTIC SYMBOL Voltage Current UNITS
2N5671 2N5672
(V) (A)
VCB VCE VBE IC IB Min. Max. Min. Max.

ICEO - SO - 0 - - 10 - 10 rnA
--- - - -
- 110 -1.5 - - 12 rnA
*
*
Coliector'Cutoff Current ICEV
ICEV -
135
100
-1.5 -
-1.5 - -
- --
15
10
10
rnA
rnA
(TC=ISOo C)
. ,.
* Emiller'Cutoff Current lEBO - - -7 0 - - 10 - 10 mA ItASE-TO-EMITTEIt IIQ.TS !VeE!

Collector·to-Emiller
Sushining Voltage:
VCEO(SUS) - - - 0.2 0 90° - 120° - V types 2N5671 and 2N5672.
With base open
With external base·to-emiller
resistance (RBE) ~50n VCER(SUS) - - - 0.2 0 lIO· - 140· - V
With base-emitter
junctiorr reverse biased
&RBE ~ Son
VCEX(SUS) - - -1.5 0.2 - 120· - 150· - V
.. Base·lo-Emitter Saluralion Voltage VSE(sal) - - - 15 1.2 - 1.5 - 1.5 V

Base·lo-Emitter Voltage VBE - 5 - 15 - - 1.6 - 1.6 V
* Collector-Io-Emitter
Saturation Voltage VCE(sal) - - - t5 1.2 - 0.75 - 0.75 V
* DC Forward-Currenl - 1 - 15 - 20 100 20 100

Transler Ratio hFE - 5 - 20 - 20 - 20 -
Secorrd·Breakdown
Collector Current < IS/bb - 24 - - - 5.S" - 5.8" - A
With base forward biased - 45 - - - 0.9< - 0.9< - A Fig_ 6 - Typical output characteristics
Second'Breakdown Energy for types 2N5671 and 2N5672.
With base reverse biased
RBE =20n, L = IS0}J.li
ES/bd - - -4 15 - 20 - 20 - mJ CASE TEMPERATURE ITC I. 25 ·c
~ 140/-V
-"CE",R't":':":':'-I-oI-:!::!---I--I++++-+--i-i-H
Gain-Bandwidth Product 'T - 10 - 2 - 50 - 50 - MHz
~i '~$J
~! 13ol--+-+-H-t-I-L...:":r----"jo.:'·~-t-t-t-+--t-t-t1
Output CapacitancelAt 1 MHz)E=OI Cob 10 - - - -
- 900 - 900 pF
~! ~ VCE0 1sus '
IB1= t: ~ 120>i----t--l-+-t+-1---++++-'P"-1-t-H
* Saturated Switching Turn-On Time
ton VCC= - - 15 IHz= - 0.5 - 0.5 !is ~J
(Delay Time + Rise Time) 30 V e~
1.2 Ii::.; IIOI--+--f-"'=:!-t--r---++t-t-+--t-t-t1
IBI=
E~ ~T4$R
Vce= ::g loo'I--+-+-H-t--'r---""",6',,';:t-t-t-+--t-t-t1
* Salurated Switching ts
30 V
- - 15 I - 1.5 - 1.5 !is 8
Storage Time Hz-
1.2
90
10 t 4 6 e ioo 2 4 8 elK
r--.. 2 4 8 101(
EXTERNAL BASE-TO-EMITTER RESISTANCE (RBEI-G
VCC 'B1= 92SS-3B09RI
* Salurated Swilching If
30 V
- - 15 - 0.5 - 0.5 !is Fig. 7 - Collector-to-emitter sustaining
Fall Time IB2=
voltage characteristics for types
1.2
2N5671 and 2N5672.
Thermal Resislance
(Juncliorr·to-Case) ABJC - ro - 5 - - 1.25 - 1.25 °C/W
COLLECTOR SUPPLY VOLTSIVcc'=3C
IcoI2.5IS,·-12.5ISz
apulsed; pulse duration .s;. 350,,5, duty factor-O.02
bCAUTION. The sumllom9vo1tages VCEOlsus) and VCEXlsusJ MUST NOT be measured on a curve tracer.
C'S/b IS defmed as the currenl at which second breakdown occurs at a speCified collector voltage with the emltter·base Junction
forward-b.ased for InillSl$lor operahon m the actlVi! region.
dpulsed; l-S,non-n!petil lvepulse
eE SJb •S defined as Ihe energy at wh.ch second breakdown occurs under spec.f,ed reverse·blas COndlllOnS. ES/b "'I/2LI2
where L III a senes load or leakagl! Inductance and Iisthepeak c()Hectorcurrent.
*In accordance Wllh JEDEC registration data format JS-6 RDF·'.
4 !i 6 ., 8 910
COLLECTOR AMPEItES (ICI
Fig. 8 - Typical saturated switching
characteristics for types
2N5671 and 2N5672.
__________________________________________ ~ _______________________ 157

POWER TRANSISTORS
2NS 781-2NS786
Silicon N-P-N and P-N-P Epitaxial-Base FBlltures:
• Low saturation votta....
Complementary-Symmetry Transistors • MaxImum saf......-of-operatlon CUIWI
• Hormoticolly .... eeI package
General-Purpose Types for Switching and Linear-Amplifier Applicatio:1s
RCA-2N5781, 2N5782, and 2N5783 are epitaxlal·base silicon These transistors are intended for medium-power switching and
• Hi., gain at hi., current
• HI., breakdown voI_
p-n·p transistors· • complements of the hometaxial·base silicon complementary-symmetry audio amplifier applications.
n-p·n types 2N6784, 2N6785, and 2N6785,- respectively. TERMINAL DESiGNATIONS
l1\e thrlltypes in each family diffar primarily in vo1taee ratings • Formerly RCA Dew. Types TA7270. TA1271. TA1272. TA7289.
and saturation characteristics. TA1290. and TA7291 retpeetlvelV.
201.__
P-N-I' 2Nl781· 2N&7W
MAXIMUM RATINGS, AbooIu,.Moximum Va/uaa:
·COLLECTOR·To-BASE VOLTAGE....................... ~BO

10<'-111 2N&784
80
2N&78&
~ .
201&788
V
COLLECTOR·To-EMllTER SUSTAINING VOLTAGE:
• With external b81e-to-emiu.t
mI....... IR._I· 100'0 ., ••••• , ••••••••••••••• , •••••
Wi.h .... open .••••••.•••••••••••••••.•.••••••.•••••
VC_RIOdl
VCEOCsu.)
80
66
66
50
.
'40
V
V
JEDEC TO-39
*EMITTER-T0-B:ASE VOLTAGE ••••••• , •••••••••••••••••• V-SO as v
.,.i.
·CONTINUOUS COLLECTOR CURRENT •.••••.•.•••••••••• iC as ..s ..s A
*CONTINUQUS BASE CURRENT •...•••• _ •.•..•••••.....• A
*TRANSISTOR DISSIPATION:
::==:;:,:t:p~~~~' :::::: ::::::::::::::

10 10 10 W
W
At CIII t8mPIfItUI1II ebcM 26 C ;.......... Der. . IIn....ly 0.067 wtc, or see Fig. 1
At ambient temperatures.tlove 21 C • • . . . • • •• o.rmllAMriy 0.00&7 wtc VOLTAGE Altf'L16 ONLY TO ntE DlSIf'ATlON·
*TEwtERATURE RANGE: LIIiIIT£O PORTION AtrfD IVbollMITIO PORTION
DC O,.MAXI~'ERATIIfG--AItEAOJRVlSIFtG1.1
Stor. end oJIIIHMing (Junction) •••.••••••••••• " •••.•••. - - - - 6 6 to +200 - - - & 2). DO NOT DERATE TIN! SHCII"1ED 'tALUI!'
*LEAO TEMPERATURE IDurlnglOldllringl: FOIICMAX.ICOIITIIIJOUS).
At dllttlM8>'1/~ In. CO.8 mm)from ...tlngpiolAl

for 10. meM. • ••••••••••••••••••••••••••••••••• ---- 230---- DC
*In KCOrdinct wfth JEDEC reglltretion dim farmlt·..... RDF-2. .For pon-p dlVices. vol~ and current _ ...... neptive.
',.Ll.4f7lO
ELECTRICAL CHARACTERlmCS, At c... T.",,,...turo (Tci =26"c unl....thsrwi"'lPtICifisd
TEST CONDITIO~ LIMITS
CHARACTERISTIC SYMBOL VOLTAGE
Vdo
VCE VBE
CURRENT
IC
Ado
B
2N5781
p-n-p
Min. Moa.
2N6784
n-p-n
Min. Max.
UNITS
,. ,.
U'I'KTIVE CASE TiMPERATUItE OR CASE TEMPERATURE ITEFF) OR (Td ~:.utr '"
Collector Cutoff Current: Fig. 1 - Dissipation derating curve for all types.
With external base-to-emitter 66 - -10 - 10 ~A
rDistance IRBEI.'OO n ICER I CA. TlMPERATURE lTel· 25ac
AtTC·I50D C 66 - -I - I mA i 't---t----t-t-H--t---t--t-t-l
•
i~ 't:~~~f==Ft=~~t---t-t-tl
With base-emitter junction reverse-
biased and external base-to-emitter
re,istance IRBEI- 100 n
-76
76
1.6
-1.5
-
-
-10
-
-
- 10
- ~A
.- I-b
• A.TC·I50D C
ICEX -75
76
1.5
-1.5
-
-
-I
-
-
- I
- mA r~fm=~m
• With base open ICEO 60 0 - -100 - 100 IlA ~
• Emitter Cu.off Current lEBO --6 0 - -10 - 10 ~A
• DC Forward-Current Transfer 2 la 20 100 20 100 • "-11)11 • I_IIIID

Ratio hFE 2 3.2 4 - 4 - COLLECTOR CUJMEMT {Iel-.A
• CoIlector.to-Emitter Sustaining Fig. 2 - Typical gain-bandwidth product for

Voltage I... Figs, 2 and 31: VCEO,"usl 0.1' 0 -B5b - 6&1> - V 2N5781, 2N5782, & 2N5783.
With base open
• COLLECTOR·TOohITTER VOLTAGE (Val· 2¥
With external bne·to-emitter • CASE ThPERATURE {Tel .. !SOC
r~.istance IRBEI = 100 n VCERI.u.1 0.1' -rd> - SOb -

i .t-.---t----t-t-_t~-t---t--_t_t-j
• Base·to-Emitter Voltage VBE 2 I' - -1.5 - 1.5 V -'- '
• Coliector-to·Emltter Saturation i..:1:=J:::=:t=:tt.1r----jt----IiH

Vol.age Imuoured 0.26 in
18.36 mml Irom cuel"
• Magnitude of Common-Emitter,
VCElsa'l I' 0.1 - -0.6 - 0.5 V
..·~==r=m=E~:$1
!i ~
~.r----r--t--i--t-t----t----j~~
SmoIl-6ignal, Short·Circul., !
Forward-Current Transfer Ratiod Ihlel
1-4MHz -2 -0.' 2 16 - -
I· 200kHz 2 0.' - 6 20 10 • • 11)11 • 11000
COLLECTOR CURRENT (1(:1- .. A
• Com~n-Emitter, Small-5ignel,
ShQ.n-Circuit, Forward-Current lit. 2 0.' 26 - 26 - Fig. 3 - Typical gain·bandwidth product 'f;;;
Transfer Ratio (f • 1 kHz) 2N5784, 2N5785, & 2N5786.
158 ______________________________________________________________
POWER TRANSISTORS
2NS781-2NS786
ELECTRICAL CHARACTERISTICE, At C- T""".,..rufW (Tel· ztt'e un!. 0 - . _lfIod
TEST CONDITION" LIMITS

CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N1781 2N1784 UNITS
Vdc Ado .....11 n1Hl
VCE VBE IC B Min. MIx. Min. MIx.
Saturated Switching Time (Vee·

30V,IS,-1821: tON -, -0.1 - 0.5 - -
Turn-on (td + trl 1 0.1 - - - 5
~,
Turn-off -1 -0.1 - 2.5 - -

It, + til tOFF 1 0.1 - - - 15
Thermal Resistance:
Junction-to-case R6JC - 17.5 - 17.6
'C/W
Junction·to-ambient R6JA - 175 - 175
Fig. 4· Typical transfer characteristics for
types 2N5781, 2N5782, 2N5783.
ELECTRICAL CHARACTERISTICS, At es.. TomptH'atu,.. (Tel· 25"e unl... othorwillJ 'poclflod
TEST CONDITIONS. LIMITS

CHARACTERISTIC

resistance (RSEI" 100 0
SYMBOL
ICER
VOLTAGE
VCE
50
Vdc
CURRENT
VBE
Adc
IC IB
2N5782
-
p-n.p
Min. MIx.
-10
2N5785
n-p-n
Min.
-
-. 10
UNITS
~A
AtTe=ISO'C SO - -I - 1 mA
biased and external base-ta-emitter -50 1.5 - -10 - - ~A
resistance (ASEI =100 {1
leEX
50 -1.5 - - - 10
• At Te= lSO'C
-50 1.5 - -I - - mA
60 -1.5 - - - I
·· WitH base open

leEO
IESO
35
-6 0
0 -
-
-100
-10
-
-
100
10
IlA
IlA
types 2N5784, 2N5785, 2N5786.
DC Forward-Current Transfer 2 1.2" 20 100 20 100

hFE CASE TEMPERATURE (Td • Uo(
Ratio 2 3.2" 4 - 4 -
·
leI' -112' D·IIC
Collector-ta-Emitter Sustaining
Voltage (see Figs. 2 and 31:
With base open
VeEO(su, 0.1' 0 _SOb
- SOb -
V
resistance (RBE) '" 100n VeER(sus 0.'- -65 b - 65 b -
• Base-to-Emitter Voltage VaE 2 1.2" - -1.5 - 1.5 V
· Collector·to-Emitter Saturation
Voltage (measured 0.25 in
(6.36 mm) from case)C
VeElsatl 1.2" 0.12
3.2" 0.6
-
-
-0.76
-2
-
- 2
0.75 V
· Magnitude of Common· Emitter,

Small-Signal, Short-Circuit,
Forward-Current Transfer Ratio d Ihlel
_1.0 _l.5 _2.0
COLLI!CTOIt CURRENT Ild-'"
_ts
1= 4 MHz -2 -0.1 2 15 - - Fig. 6 - Typical saturated switching characteristics

1= 200 kHz 2 0.1 - - 6 20
* Common-Emitter, Smail-Signal. for types 2N5781, 2N5782, 2N5783.
Short-Circuit, Forward-Current
Transfer Ratio (f .. 1 kHz)
hie 2 0.1 25 - 25 -
CASE TEMPERATURE (Tel, 2SOC
Saturated Switching Time (Vce· IBI' -1112' C,IIC
30 V.lal -la21:
TUrn-on tON -I -0.1 - 0.6 - -5
ltd + t,l I 0.1 - - - III
Turn-otf -I -0.1 - 2.6 - -
It, +tll tOFF I 0.1 - - - 15
Thermal Resistance:
Junctlon-to-case R8JC 17.6 - 17.5
'C/W
Junctlon-to-amblent R8JA - 175 - 175
• In accordance with JEDEC registration data format JS-6 RDF·2. • For p·n·p devices. voltage and current valullare
• Pulsed, pulse duration .. 300 p.s, duty factor" 1.8%. negative,
b CAUTION: Su,relnlng valreflllS VCEO(w'l•. /If1d VeER!'u,) C Lead resiltance is critical In thll tnt.
MUST NOT be mflBlur«! on. CUrvtl trK". d Measured at a frequency where htel is decr"s!ng I COLLECTOR CURRENT (Id- A
at approximately 6 dB per octave.
Fig. 7· Typical sacurated switching characteristics
for types 2N5784, 2N5785, & 2N5786.
159
POWER TRANSISTORS
2N5781·2N5786
ELECTRICAL CHARACTERISTICS, At c:a.. T.mperBwre,rtcl - 2ff'C unl... o"'orwI18 .pecified
TEST CONDITION~ LIMITS
Vd. Ado p-n-p n-p..,
VCE VBE IC la Min. Max. Min. Max.

With external base-to-emitter 40 - -10 - 10 ~A
resistance (Aee) '" 100 n
ICER
At TC =150°C 40. - -1 - 1 rnA
biased and external base-to-emitter -45 1.5 - -10 - -
resistance (RBEI "" 100 n
ICEX
45 -1.5 - - - 10
~A
-0.01 2 4 ' 1..0,1 J 'f
COllECT9RCURRI!NTUC)-A
'_1.0 2 "1_.
At TC =150°C
-45 1.5 - -1 - - rnA
45 -1.5 - - - 1 Fig. 8 - Typical dc-beta characteristics for
type 2N5781.
With base open iCEO 25 0 - -100 - 100 ~A
Emitter Cutoff Current leso -3.5 0 - -10 - 10 ~A
DC Forward-Current Transfer 2 1.6" 20 100 20 100 IUW. COllEC:TOR·TQ-EMITTERVOLTAGE!VC:E)-2V t.= --
I :~B~ J!
hFE
Ratio 2 3.2" 4 - 4 -
Collector-ta-Emitter Sustaining ---t----t-t-t-t----I-.-t-t-H
Voltage lSI!< Figs. 2 and 3): Vceolsus) 0.1· 0 -401> - 4r:J> -
=100 • __ ~.:is:c.. .
With base open V .~ :- j -~- F.--~::::::-
j·:;-qr& ~
With,external base-ta-emltter
resistance (RBEI'" 100 n VceRlsus) 0.1· -4Sb - 45 b -
• Base-to-Emitter Voltage VaE 2 1.6" - -1.5 - 1.5 V
· Collector-ta-Emitter
$aturation Voltage (measured
0.25 in (6.35 mm) from casele
VCE(s.t) 1.6" 0.16
3.2" 0.8
-
-
-1
-2
-
-
1
2
V
~ l' - J t-tJ+-+I_--1-H+--+--t-+t-1
· Magnitude of Common-Emitter,
Small·Signal, Short-Circuit,
Forward-Current Transfer Aatiod Ihf.1
• • '0.1 ' "1.0
COllECTOR CURRENT (lcl-A
f = 4 MHz -2 -0.1 2 15 - - Fig. 9 - Typical dc-beta characteristics for

f· 200kHz 2 0.1 - - 5 2D type 2N5784.
• Common·Emitter. Small·Signal,
Short,Circuit, Forward·Current hi. 2 0.1 25 - 25 -
Transfer Aatio (f '" 1 kHz) IUW: COLlECTOR.TOoEMITTER VOLTAGE (VCE). _tv
~turated Switching Time (VCC '"

30 V, lSI ='IS2):
TUrn-on tON -1 -D. 1 - 0.5 - -
Itd+t,) 1 0.1 - - - 5 ~s
Turn·off
Its+tf) tOFF
-1
1
-0.1
0.1
-
-
2.5
-
-
- 15
-
Thermal Resistance:
Junction·to-case R9JC
~
17.5 - 17.5 °CIW
Junction·to-ambient R9JA - 175 - 175
• In accordance with JEDEC registration data f.ormat JS·6 RDF·2. , For p·n·p devices, voltage and current values are negative .
-0.01 1 . , '_D,1 1 "'-1.0 , ''-10
a Pulsed. pulse duration'" 300 p.s, duty factor'" .1.8%. C Lead resistance is critical in this test.
COlLECTORCUltREMT(lCI _A
b CAUTION: SUrtaining voltage. VCEOI.u.I, .nd VCERI;".) d Measured at a frequency where Ihfel is decreasing at
MUST NOT be measured on a curve tracer. approximately 6 dB per octave. Fig. 10 - Typical dc-beta characteristics for
type 2N5782.
: CClLECTOlt·TO-EIiITTER VOL TAGE {VCE~ = 2V
~.~ ..:..!.~.:c
S! z +ZR:
!.. - -I ~
, :~A$ET!MPERATURI!{TC1--'
I:.:=~c-,
~.·~m+=
~'''It:--+-H-l
.. :~-
• '~~·--~-++-4-·--t-~+--+--~+-H
_ 0.01 2 ~"~ 0.1 a , . . . . 1.0 2 "-.10 0.11 , "0.1 "' "1.0 , "10
4 "0.1 • "1.0 , '110
COLLECTOR CURRENT {leI- A mMllS COLLECTOR CURltEfrlT UC)-Io

COL"L!CTOR CURRENT (Ic~ _ A
ftlH!Z'
Fig. 11 - Typical dc-beta characteristics Fig. 12 - Typical dc-beta characteristics Fig. 13 - Typical dc-beta characteristics for
for type 2N5783. for type 2N5786. type 2N5785.
160 _____________________________________________________________
POWER TRANSISTORS
2N5781-2N5786
COLLECTOR-TO-EMITTER VOLTAGE (VCEr-v

92CS-23943
Fig. 14 - Maximum operating areas for types 2N5781, 2N5782, and 2N5783.
92CS-23944
Fig. 15 - Maximum operating areas for types 2N5784, 2N5785, and 2N5786.
_______________________________________________________________ 161
POWER TRANSISTORS
2N5838-2N5840
F.at.... :
High-Voltage, High-Power Silicon N-P-N • Maximum lafe-areo.of..operatlon curve.
Power Transistor • Low ,aturatlon volta ...
For Switching and Linear Applications in Military. Industrial and Commercial Equipment • HI.h yok... Rlt1 ••s
YCER(s.s) = 375 Y (2N5840)
RCA 2N5838. 2N5839and 2N5840 •• are epitaxial silicon are especially suitable for us~ in inverters, -dett.cUon 300 Y (2N5839)
n-p-n power transistors utilizing a multiple-emitter-site circuits, sWitching regulators, bigh-voltage bridge amJli- 275 Y (2N5838)
structure. These devices employ the popular JEOEC "fiers, ignition circuits, and other high;"yoltage switching
TO-3 package; they differ mainly in voltage, current- applications. • Hlih dlllipotion ... ti ••
gain, and VCE(sat) ratings.
Featuring high breakdown voltage ratings and low-satu-
.* Formerly RCA Dey. type. TA7513. TA753O,and TA7420
respectively.
PTe 100W
ration voltage values, the 2NS838, 2N5839 and 2N58~O TERMINAL DeSIGNATIONS
MAXIMUM RATINGS, Ah.o'ut&.Alaxlmum Vol" •• :
e
'0
2N5838 2N5839 2N5UO *TRANSISTOR DISS]PA TION.
*COLLECTOR·TO·SASB
PT,
v At c. . . tetbp8rat.... liP to 25° C
VOLTAGE. VCBO •..•••••
COLLECTOR-TOoBMITTER SUS-
275 300 375
A:~~~CPe::.::t:~~ upto250 c 100
100 100 ...
TAINING VOLTAGE: and VCB above 40 V •••.. See FiB.S
v At ea.e ternpera*ute. above 2SO C
* ::~~ ~::;r:~:~~)~~) 250 275 350
and VeE above 40 V .•••• See Fi~.1 as
-1.5 v:. VCEV(IIUS).f. ••... 275 300 375 V *TEMPERATURB RANOE:
Wlth external base-to-emitter ·c
resistanee (RBE).:£ SO
VCER(aus) • • . . • • • . . . .
n. 275 300 375 v
*~or;:=.r,.r;:;:l({:;~c;') ·65 to +200
Solderinl); JEDEC TO-3
*BMlTTBR-TO-BASE At diat.Me. ~ 1/32 in.
VOLTAGE, VEao . . • • . . • . V (0.8 1ftID) from e..e for 10 •
*COLLECTOR CURRENT, Ie
m•••••••••••••••••• 230 ·c
Continuous . . . . . • . . . . . . A : In .cc:ordance wltbJEDBC , ..l.traUondata fCII'IUt (J,"", RDP-I).
Peak . . • • . . . • . . • • . . . • A Shown a. Ven(.... ) In JIlDItC RepMrMloa Data.
"'CONT!NUOUS SASE CURRBNT,
IS...... . . . . . . . . . . . . . 1.5 1.5 A
ELECTRICAL CHARACTERISTICS. C... Tomp.r.'.re (Tel. 25°C
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2N6838 2N5839 2N5840 UNITS

Vdc Ada
VCE VBE IC IB Min. Mex, Min. Max. Min. Max.

Colleclol·Cutoff Current: 200 2 mA NOTE: CURRENT DERATING AT CONSTANT
WIth base open VOLTAGE APPLIES ONLY TO THE DlISIPATION~
. WIth base·emllier Junclton

ICED
ICEV
250
265
290
·1.5
.1.5
5
2
2
2
.A
LIMITED PORTION AND THE (S/b"LIMITED
POATION OF MAXIMUM OPERATING AFiEA
CUFIVES DO NOT OERATE THE SPECIFIED VAL.UE
FOR Ic MAX.
levelSe biased .1.5
360 1
With base·emiller junction ICEV 165 ·1.5 8
290 ·1.5 5 mA
reverse biased, TC=1000C TC 100 'c 360 ·1.5 5
• Emlller·Cutolf Current lEBO -6 1 1 1 mA
Colleclor·lo·Emltter
Sustaining VoltaRe' VCEOfSUSP 0.2" 250 b mb 350b
With base open
V
With base·emillel Junction 300~
reverse biased
VCEX,sus P ·15 0.1" mb 37Sb
With eltternal base·lo·emiller

VCERlsusP 0.2- mb . 30eb 375b
CASIE TEMPUATURE" tTcl--c
resistance (R BE 1 - 50 d
.., EmltleHo-Base Voltage VEBO 6 6 6 V Fig. 1 • Derating curves for all types •
le=0.02A
5 0.5" 10 20 20
.. DC Forward,Cullenl 10 SO 10 SO
hfE 3 2"
Transfer Rallo 2 3" 8· 40
.. Base·to·Emlller 2" 0.2 2 2 V
VBElsa11
Saturallon Vollage 3" 0.375 2
tOLL!CTOR'TO-£MITT[A VQl.TAG! CVc:EJ'~ V
Colleclor.lo.Emltter IS 1.5
t
Saluratlon Voltage vCElsau

I" 0.2
3" 0.375 1 V , , - ....
i-~~~u ,WI
-- "
Output Capacltanc~: Coho ISO ISO ISO pF
VCB = 10 V. f = 1 MHz
.. Magnitude of Common·
Emillel. Small·Slgn~1. Sholl'
CUCU!!, Forward·Cunen!
Transfer RatiO If ·1 MHzl
\hl.i 10 0.2 5 5 5 I! '
g~ 1.5 I-- CASE· TEMPERATUR! /
\
Forwarcj..Bias, e= (TC ). 25·C
\
Second-Breakdown
Collectc.r Current:
t =1 s, nonrepetitlvp.
Second Breakdowrf Energy
(With base reverse blSsed)
Islb
Esfo
40
·4
2.i
0.45
2.5
0.45
2.5
0.45 oj
A
r I
0.'
0.01 a . .. • . ...
0.1
~ ..
a . ..
10
n.
RB • 50 L • 100 .H COlLECTOft CUftA!NT lIe I-A
Thermal Resistance ~ 10 5 1.75 1.75 1.75 'C/I
(Junction·to·Case) R8JC Fig. 2· Typical normalized dc bets
* In accordance with )EDEC rellstratlon data f«mat ()S-6 RDF-l) II CAUTION: ~ sustalnlna: volt'l" VCEO('U'), VC£X(SUI) and
a Pulsed; pul.e duration '" 350,uS, Duty'factor t2%.· VCI;:R('UI), MUST NOT tie measured on I curve trlCer.
162
POWER TRANSISTORS
2N5838-2N5840
SWITCHING-TIME CHARACTERISTICS At C... Temperewre (Tc)- 2s"C
TEST CONOITIc:>NS LIMITS
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 2NG838 2N5839 2N5840 UNITS

V de A de
VCC IC IB- Max TVp_ Max_ TVp_ Max. TVp.
Swilcltina'Times:
Delay Id 2 '0.2 0.07 0.07
200 3 0.375 0.06
Rise 2 0.2 1.5 0.6 \.75 0.6
.
I,
200 J 0.375 U 0.8
SIOIlII
I, 2 0.1 3.15 1.15 3.0 1./5 ",
100 1 0.315 3.0 1.0
fall 1 0.2 1.5 0.35 1.5 0.35
If 200 3 0.375 1.5 0.4
Fig_ 3 - Typical saturation voltage
* In accordance with JEDEC registration data format (JS·6 RDF-I). • 'BI ::- 182 = value shown. characteristics for all types_
COL.LECTOR-lO-EMITTER VOLTAGE lVce.l·~ V i
0.5 1 1.5
BASE·tO-EMITTER VOLTAGE IVeEI-V

I-
Z for all types.
'"
IX
IX
:::>
U
COLLECTOR-tO-EMITTER VOLTAGE tVC£I- v 92S5.4071111
0.01 Fig_ 6 - Typical output characteristics

fO fOO for all types_
COLLECTOR-TO - EMITTER VOLTAGE (VCE 1 - V 92CS~15905
Fig_ 5 - M/ilximum operating areas for all types_ CASE TEMPERATURE ITC " 25-C
10 ' '100 . . . ·'K 6 I'OK

EXTERNAL BASE-tO-EMITTER RESISTANCEIR8E'-A 92(5-15)04
Fig. 7 - Collector-to-emitter sustaining

voltage characteristics for all
types_
163
POWER TRANSISTORS
2N5838-'2N5840
0.12
~~i~I~,,"AT:l~i'.'cro'H'
0.11
COLLECTOR SUPPLY VOLTS
.SE TEMPERATURE ITCI'
(Vee'
n"t
" 2
DC BETA III,£,:~ ::=3':~2N"401

1 0.1
8, '-18 z
1
.
~O.09
~ 0.08
~
~O.07
0.06
0.0
COLLECTOR CURRENT'IcI-A
USS'40~OIll
Fig. 9· Typical delay-time characteristic

for all types.
:~~~I~ORNAT~~~i".2~·HI
COLLECTOR SUPPLY VOLTS !Vee.' 20
CASE TEMPERATURE lTe'- 25"C
DC BETA (tin': I~ :lN~~;'~2N58401
8,' -1 8a
I
.
w
"
iii: 0.5
V CEO MAX.= 350 V 12N58'101-;';'J.;.;.;.;t:11l:P
< 2 4 6 8 10 2 4 6 8 100 2 4 6 8'000 COLLEe TOR CURRENT lIe I-A

COLLECTOR-TO-EMITTER VOLTAGE 'Val-V
92CS-15!106
Fig. 10· Typical rise· time characteristic
Fig. 8· Maximum operating areas for all types. for all types.
:t.'i~Ir.'O~AT':~i'.~o'O·Hr ~~~~I.mRNAT~~~f.~cfo·H'
COLLECTOR SUPPLY VOLTS (Vee' • 2: COLLECTOR S!JPPLY VOLTS lVee " 20
AU TEMPEAATUftE ITCI· !S"C ASE TEMPERATURE ITcl' noc
DC BETA! h n :' • 8 !2N5838J
:1~li::'S:~21158401
DC lETA !lIn:'
I, .-1 82
•
i 0.5
8 1 • -18 Z
010 t2N5839 a 2N58"0~
.
:;.. 0.4
~ 0.3
: 0.2
0.1
o· I 2
COLLECTOR CURRENT IICI-A COLLECTOR.. CURRENT t~ct-A
Fig. 11 . Typical storage-time characteristic Fig. 12· Typical fall·time characteristic

for a/l types. for all types.
164
POWER TRANSISTORS
2N5869, 2N5870
Features:
Rugged Devices, Broadly Applicable
For Industrial and Commercial Use
• Low saturation voltages.
• Maximum safe-areas-of-operation curves
The RCA-2N5869 and 2N5870 are epitaxial- They differ· in voltage ratings and in the
• Hermeticallv sealed JEDEC
base silicon n-p-n transistors featuring high currents at which the parameters are con- TO-204MA package
gain at high current_ These devices have a trolled.
• High gain at high current
dissipation capability of 87_5 watts at case Both of these devices are supplied in the • Thermal-cycling rating curve
temperatures up to 25°C. steel .JEDEC TO-204MA hermetic package.
Applications:
2N5869 2N5870 • Power-switching circuits
60 80 V • Solenoid drivers
• VcEa '
60 80 V
• VcBa '
* v EBa · 5 5 V
* IC' 5 5 A
10 10 A TERMINAL DESIGNATIONS
• ICM
* lB' 2 2 A
C
'0
* PT 0
At T C ';;25 C 87.5 87.5 W
At T C >25°C derate linearly 0_5 W/C
• T stg' T J . - -65 to 200 - - - °c
• TL
At distance 1/16 in. (1.58 mm) from case for 10 5 --250 °c
JEDEC TO-204MA
,U,
·
- ~ ~o.11s----== f-
·
100
- COLlECTOR-TO-£MfrT£R VOLTAGE tVeE'- .v
1 · r--
~400
~.'~~ rl. lTti ITclL~.c
·
f-
~.
~
CAJE
~
u
1 ; 200
2 ; ~ ~ ~r-
"\ ,\ \
,
~
z CURVES APPLY BELOW
~ '00
~
RATED VCEO '1-- I--
i
~
~ 00
, 60 . -40-<:
"" ,
u
I--I--
.01--" ~
= '1-- I-- i
!· z
2HaS6,
2N5870
i\ \ \
rr Il\
c
E
w
~
~'
I. 20
~
~~
1'\
0.1
.•
AMBIENT TEMPERATURE (Tc'-25-C
z
COL.LEdgR EMITTER VOLTAGE (YCE'-V HCS-501::
. \
•
\. I 2 . . . 8'0 2
NUN8ER Of THE"""" CYCLES UN TMOUSANDSI
.. S 1'02 2. .. 18,0' 2
g '0
0.01
. . .. . . . ...
0.'
II
COlL.ECTOR CURRENT IIcl-A

'0
Fig. 1 - Maximum operating areas. 9zCS-115511U

Fig. 2 - Thermal-cycling rating chart. Fig_ 3 - Typicsl de beta charactfJristics
for both types_
• COLLECTOR·TO·EMITTER VOLTAtE (VeE)· 4 V

r5ii~NS87( TJa25·C -----" - TJ-ZS·C_
-
CA'E TEMPERATURIE CTC)· 20-C lells alO
7 1 IIB-IO
i 'B'-'82
. ··'~.. .
I
: ,....... k'
f /".... ' CC·"O
~
~ ~ V
t, AT Vee.,Ov
/ \
I·
~
.!.
w
~ · I'
··• ---
j: 0,1
I ~
'd At V
~ 0.'
... • . ... . ..
I
0."
z
0.1 I
COLLECTOR CURIilENTtIc)-A
• I
• 10
,
.. . . .. . .0.1
2
COLLECTOR CURRENT (IC}-A 92eS-30189

4
2N5869, -2 N5870
s • • 0.1 2. 4
COLLECTOR CURRENT Ucl-A
II " I
.2el-30181
"CS-H004
Fig_ 4 - Typical gain-bandwidth characteristics for Fig. 5 - Turn--on-time characteristics. Fig_ 6 - Turn-off-time characteristics.
both types.
____________________________________________________________ 165
POWER TRANSISTORS
2N5869, 2N5870
ELECTRICAL CHARACTERISTICS, at Case Temperatura .
TC· 26°C Unless Otherwise Specified
VOLTAGE CURRENT 2N5869 2N587Q
CHARACTERISTIC V de A de UNIT
VCE VBE IC IB MIN. MAX. MIN. MAX.

• ICEX 60 1.5 - - - 0.1 - -
80 1.5 - - - - - 0.1 mA
TC = 150°C 60 1.5 - - - 2 - -
SO 1.5 - - - - - 2
• ICEO 30 - - 0 - 0.5 - - mA
40 - - 0 - - - 0.5
• ICBO 60· - - - - 0.1 - - mA
IE =0 SO· - - - - - - 0.1
* lEBO - -5 0 - - 1 - 1 mA
* VCEO(susl b - - 0.1 0 60 - ·80 - V
* hFE a 4 - 0.3 - 35 - 35 -
4 - 1.5 - 20 100 20 100
4 - 5 - 4 - 4 -
* VBE a 4 - 1.5 - - 1.5 - 1.5 V
* VBE(satl a - - 5 1.25 - 2.5 - 2.5 V
* VCE(satl a - ~
2 0.2 - 1 - 1
V
- - 5 1.25 - 2 - 2
* fT
f = 1 MHz
10 - 0.25 - 4 - 4 - MHz
* hfe 4 - 0.25 - 20 - 20 -
f = 1.0 kHz
* Cob VCB = 10 V - - - - - 150 - 150 pF

f = 1 kHz -
* I-'-
tr - - 1.5 0.15 C - 0.7 - 0.7 J.ls
* I-'-
ts VCC=30V - - 1.5 0.15 c - 1 - 1 J.ls
* tf - - 1.5 0.15C - 0.8 - O.S J.ls
ROJC - - - - - 2 - 2 °CIW
·V CB .
• Pulsed; pulse width ';;300 jl.S, duty factor ';;2%.
b CAUTION: Suslaining vollage, VCEO(susl. MUST NOT be measured on a curve Iracer.
C 181 = -1 8 2
I
IASE-TO-EMITTER VOLTAGE (VSEI-V
'HCS-2.9005
Fig, 7 - Typical input characteristics for
both types.
166
POWER TRANSISTORS
2N5871,2N5872, 2N5873, 2N5874

. Rugged Devices, Broadly Applicable Features:
The RCA-2N5871 and 2N5872 are epitaxial- devices have a dissipation capabil ity of 115 • Maximum safe-areas-of-operation curves
base silicon p-n-p transistors featuring high watts at case temperature up to 25°C. • Hermetically sealed JEDEC TO-31
gain at high current_ The RCA-2N5873 and TO-204MA package
They differ in voltage ratings and in the
2N5874 are epitaxial-base silicon n-p-n tran- • High gain at high current
currents at which the parameters are con-
sistors_ They may be used as complements to • Thermal-cycling rating curve
trolled. All are supplied in the steel JEDEC
2N5871 and 2N5872. respectively. These
TO-204MA hermetic package.
Applications:
2N5871· 2N5872· • Power-switching circuits
2N5873 2N5874 • Solenoid drivers
• v eEO ' 60 80 V
• VeBO ' 60 80 V
* VEBO ' 5 5 V
* Ie· 7 7 A
• ICM 15 15 A
* lB' 2 2 A
• PT
AtTc';;;25°e . . . . . 115 115 W
>
At T e 250 e derate linearly. 0.658 Wloc
• TL
At distance 1116 in. (1.58 mm) from cas. for 10 s ---250 - - - °e
* TJ • Tstg . - - -65 to 200 - - °c JEDEC TO-204MA
10
2
•
T -Z!5'C
I"-. "- ~/ ...

•
100
.
. ."-
.. ~ VCE· 4V
1 I
4
~
~
I
i5
·
4
TJ ·200·C
I.........
1......... ~O~j\ f-
I~Q~ ~
~
1
~
~ 'I-- 1--1'
1\ \'.""-
'" ~~
+.
"
S
15 100
2 ~.C
2'·c
-!5S·C
t:::---- t::::::,
: I-- t--~ Ii 8
~
2 1'-0
il •
e'" ~\ 1\ ~ i II \ ~ o~
~
• t-.. ~
··
~
~~
I
~ 'I-- t-- ~ ili
;8 CURVES APPLV BELOW RrED VCEO
f '" I' "{..<I

-:'.1 t--
t-
~ 2
...\ Ii! I"

2N5871,2N58n
. 1\~
~ " I~~ ~ ,
.. ~
4
•• • 10
2Ni72 ,ZNSI7<f.
COLLECTOR EMITTER YOLTA$E (VCEI-V.2CS_1OI10

.H t\
• • 100
10
I
, II
10
n n
10 2
I
IrNIMIIR OF THERMALCYCLEa liN THOUSANDSI

• I I
10 3
2
O!
2
g
'0
8
• 18 2 8 ,
• • • • .,
Fig. 1 - Maximum operating araas for all types. Fig. 2 _. Thermal-cycling rating chart. 0.1 COLLECTOR CURRENT ('IC)-A 92CS- 302/1
Fig. 3- Typical de beta characteristics for

2N5871 and 2N5872.
ve~ ·.v- TJ -2S·C • TJ ·2S·C

!
51
TJ~
!c.
2 ..8 "I
-
.........
2~'C . . . . r-. 1.
~IOO ~
;. ,.. L
..~
.........
!! 8 r-..... '.2
~
~
• :-.- lL /
..i
~
z • 1
-"·C -....... ~
co
S ... , 01\ ~'T 'e/lesle
Ver. • ~ 1 l1
!:; 0.8 --..,
VIEts""
I AT Ie II •• ,0 ~
~ ,. i , /
r1 .4"
0
g V ,sit V > v L
.."il • .......... F"- vi' AT
L
,;
i EAT /
-.
c .......... 0.. 0.'
~I V -vl. )'B'~ ~
Ii!
!!
•
.. 0., • • • IrC)-A
COLLECTOR CURRENT IICI-IOI12
• •
0
"0.1
v•• 1••,1 AT
2
COLLECTOR CU""INT
'e'"..',o
• • • exc )-A. .IU.10111
• .. .. 0
0·,
2
llO.IAJ 'e
• •
COLLECTOR CURRENT I I C )-A
8
I
2
•
92CS-30214
..
Fig. 4 - Typical de bela characteri.tic. for Fig. 5 - Typical voltage characteri.tics for Fig. 6 - Typical voltage characteristic. for
2N5873 and 2N5874. 2N5871 and 2N5872. 2N5873 and 2N5874.
________________________________ ~-------------------------------167
POWER TRANSISTORS
2N5871, 2N5872, 2N5873, 2N5874

ELECTRICAL CHARACTERISTICS, at Case Temperature
TC .. 25°C Unless Otherwise Specified
·•
,
TJ ·25-C
"CC"30V
le/ls tlO = I--
-- -
I--
TEST CONDITIONS LIMITS • ~ ..... t:r
~
4
2N587~ '1
VOLTAGE CURRENT 2N5871-
1 \, '- /'" :
CHARACTERISTIC V de A de 2N5873 2N5874 UNIT
•
"
w
VCE VSE IC IS MIN. MAX. MIN. MAX. !.0.1 "- td AT "BE (oW-!Y'
- • -...
* ICEX 60
BO
1.5
1.5
-
-
-
- -
0.25
-
-
-
-
0.25 mA ·
4 .. 1-""'-
-.
. •.
I-
TC = 150°C 60 1.5 - - - 2 - - _ _ 2N5871.2N5872 {PHP}
_ _ _ 2N~873,2N5874 (NPNI
BO 1.5 - - - - - 2
2
, 4 ,
" 0.1
2
I
* ICED 30 - - 0 - 0.5 - - mA
COLLECTOR CURRENT CI.C ' - A 9ZCS-3021!!
40 - - 0 - - - 0.5 Fig. 7 - Tvpical turn-on·time for all type•.
* ICBO 60c - - - - 0.25 - - mA

IE = 0 Boe - - - - - - 0.25
* lEBO - -5 0 - - 1 - 1 mA
* VCEO(sus)b - - 0.1 0 60 - BO - V
a -- -
'T
TJ -25·e
* hFE a 4 - 0.5 - - - vec· 3O'o'

]
-
35 35
tells"IO
4 - 2.5 - 20 100 20 100 2
lSI" 182
- - - - ,I,
4 7.0 4 4 , _ ..:"
* VBE a 4
-
-
-
2.5 - -
-
1.5 -
-
1.5 V t
1 • ~ · . -~ "'::~-- .
'...: ......
.-
-
* VBE(sat)a 7 1.75 2.5 2.5 V .......4
1
* VCE(sat)a -
-
-
-
4 0.4
7 1.75
-
-
1
2
-
-
1
2
V
! ~
2
........... ~
_. ___ I
-- '-~ ~
- - - - 0.'
* 10 0.25 4 4 MHz
. .,
fT
• -- _ _ 2N5871,2N5872 (PHP)
f= 1 MHz •TI . 2N58n. 2N&87.. (NPHI
* hfe 4 - 0.5 - 20 - 20 - OI • • •
COLLECTOR CURRENT (.I.e J-A
• I 2
92CS-302le
f = 1.0 kHz
Fig. 8 - Typical turn-off·time for all types.
* Cob 2N5B71·72 10e - - - - 300 - 300
pF
f = 1 MHz 2N5B73·74 250 - 250
*i - - 2.5 0.25d - 0.7 - 0.7 IJ.S
* -'-
ts VCC=30V - - 2.5 0.25d - 1 - 1 IJ.S
* tf - - 2.5 0.25d - O.B - O.B IJ.s

ROJC - - - - - 1.52 - 1.52 °C/W

• Pulsed; pulse width';;; 300 I's. duty factor';;; 2%.
b CAUTION: Sustaining voltage. VCEOlsus). MUST NOT be measured on a curve tracer.
C V eB d IB1 = -I B2
168
POWER TRANSISTORS
2N5875, 2N5876, 2N5877, 2N5878

Rugged Devices, Broadly Applicable Features:
The RCA-2N5B75 and 2N5B76 are epitaxial- They differ in voltage ratings and in • Maximum safe-areas-of-operation curves
base silicon p-n-p transistors featuring high currents at which the parameters are con- • Hermetically sealed JEDEC TO-3fTO-204MA
package
gain at high current_ The RCA-2N5877 and trolled_ All are supplied in the steel
2N5878 are epitaxial-base silicon n-p-n tran- JEDEC TO-204MA hermetic package_ • High gain at high current
sistors_ They may be used as complements to • Thermal-cycling rating curve
2N5875 and 2N5876. respectively. These
Applications:
devices have a compability of 150 watts at
case temperatures up to 25°C_ • Series and shunt regulators
MAXIMUM RATINGS,Absolute Values:
2N5875· 2N5876·
2N5877 2N5878
• VCEO · 60 80 v
• VCBO · 60 60 V
* V EBO · 5 5 V
• IC' 10 10 A
• ICM 20 20 A
• lB' 4 4 A
• PT
At T c ';;;;25°C 150 150 W
At TC > 25°C derate linearly - - 0.857 W/·C JEDEC TO-204MA
• T J • Tstg . . . - -65 to 200 - - ·C
• TL
At 1/16 in. 11.58 mm) from case for 10. ---250--- ·C
·In accordance with JEDEC registration data.

• For p-n-p devices, voltage & current values are negative.
r--...~ ~~.- . . -
r- ~lzl/8"O vc!·•.Jv
100 "-
c
··•
10
"',. ~ '---\.'~.~-C?~_
•. '-
II
.
i loo f - - """"""-~
1u
!:!
5
~ •
TC -25-C
'-
~ '\ 't\
1
f
~
:
.- '--~
8
1\ ~l",Jo.,
"A~>.
~
i •
~
5 •
--.....;;~ ""
.......
~ ~
\ Ii t--- -~
\ ~c 1\ ~~
ii;;
~
~ .•
I
~
f
.t---
i
-.:'
\ ~> r-
I
! 2
8
· CURVES APPLY Bf.LOW RATED Vero
2N
1
"78,2N5878
\ 1\
2Nse7l.2NI58~1~
.r\• I
. ,\\,'t~ .~ . .fir
a a
.. . ~~ ~
g 10
. ..
I\~
1\
• • COLLECTOR
• 10 z •
EMln,,, VOLTAGE (Yal-V
100
RCI-IOIM
I 10 102
NlMe:R OF' 1'HE ..... CVCL.EIItN THOUSANDS)
10' 0.1
2
• •• I
2
10
,2cI-IU70ft, COLLECTOR ClAf'RENT IZoc I-A nCI-JOIN
Fig. , - CoIIBCtor-emittBr vo/rage (VeEI- V_ Fig_ 2 - Thermal-cyeling raring ehllrt_
Fig_ 3 - TypieBI de beta ehllracreristies for
2N5875 and 2N5876_
__________________ ~ __________________________________________________169
POWER TRANSISTORS
2N5875, 2N5876, 2N5877, 2N5818

ELECTRICAL CHARACTERISTICS, at c... TllllperlltUrt TC· 26·C
Unl. . Otherwl.. Specified
VOLTAGE CURRENl 2N68~ 2N687ae
CHARACTERISTIC Vdc Adc 2N6877 2N5E78 UNITS
VCE VaE IC la MIN MAX. MIN. MAX.
'" ICEX 60
80
1.6
1.6
-
-
-
-
- 0.6
- - -- - 0.6 mA
TC·'60·C 60
80
1.6
1.6
-
-
-
-
- 6
- -
-- - 6 0.1 1.",24',10
COLLICTOR CURRENT n: c 1-A ,lct-lOlti
'" ICEO 30 - - 0 - 1 - - Fig. 4 - :Typlce/ de beta chsrllCrer/.r/c, for
40 - - 0 - - - 1 mA 2N6871.nd 2,N6818.
'" ICBO SOC - - - - 0.6 - -

IE =0 SOC - - - - - - 0.6 mA
.... T,,-2.·C .
'" lEBO
- -6 - - - 1 - 1
IE -0
mA
.. V
V
'" VCEO(susl b - - 0.2 0 60 - 80 - V
~ VIE'tat.ATIc:".-1O
1/
'" hFEI 4 - 1 - 36 - 36 - ~ ..• VIE AT VC,-4.0Y 1 L
4 - 4 - 20 100 20 100 ~
ll.
4 - 10 - 4 - 4 - ~ ... r-
il ....... y
'" VBEI 4 - 4 - - 1.6 - 1.6 V

.L
.A
'" VBE(satll - - 10 2.6 - 2.6 - 2.6 V
r-YCE,..UAT Ic/~IO
V
'" VCE(sat1 8 - - 6 0.6 - 1 - 1
V
0
• • ••
I"""
• •nCI-SOIt?
• •
- - 10 2.5 - 3 - 3 0.'
I
COLLlCTQfI CURRINT etc I-A
'" rye
f= 1 MHz
10 - p.5 - 4 - 4 - MHz Fig. 5 - Typlc./ vo/tagH for 2N6876 Bnd 2N6876.
'" hfe
f = 1 kHz
4 - 1 - 20 - 20 -
,..
T. . . 211~
'" Co b VCB=10V
.L
2N6875·76 - - - - - 600 - 600 pF :L
f = 1 MHz 2N5877-78 - - - - - 300 - 300
=
•.0
.....
./
- - 4 0.4d - - ~ 0.1 r--::-~lAT 't",·10
./
'" ~
tr 0.7 0.7 /lS
'" ts VCc=30V - - 4 0.4d - 1.0 - 1.0 /lS ~
~
~
... r- v"
~~. . Af'4CE· .. ·O'4
I- 0.'
'" tf - - 4 0.4d - 0.8 - 0.8 jlS

., ~ L
R9JC - - - - - 1.17 -' 1.17 ·CIW t---"VCE (tQtltC' 1.·10
• In accordance with JEDEC registration data; • For p..,.p devices. voltage. and current values ere negative. .., . • .
• fICl-A
COLLECTOR CURRENT IICI-SOIn •
• Pulsad; pulse width <; ~ ps. duty cycle <:2%. b CAUTION: Sustaining voltage. VCEO (sus, • MUST NOT
evCS be mftsured on 8 curve tracer. Fig. 6 - T'IpiCl/ va/tagH for 2N6871.nd 2N6878. i
d IS 1· -I S2
vee· IOY 'v. Yce·ao y

••............,:-.
_
- • ICIlI,·IO
·.-c
~~/.I:;:
--r---....
~ I ••• .....
• • TJ
•~ " ~"'"
-..- ~i-"
-"":: t,
•
t
•
.
=0,1
•
";: •
. . .T Yer. (off)-5.0'l
:~ ,
-
;
;:
.• ~
~
r- ~
...... ~
~.... •
•
• • ___
I'" :'::t: ~ -- f-.... ~~
.... 0.,
2NU'I,INS." 'PHPJ
--I I.Slj' ·"iITY"'
. • • •I
COLLECTOR: CUIllENT
•
u:c )-A Mca-IOM
I , 0.'
0., .
INllln.ZNII7I (PNP)
____ 2NII11. 2NII78 f NPN)
'
• •• I •
COLLICTOIt CUMINT ('1 c)-A IlCI-lOIOQ'
• ••
Fig, 7 -, T'lpice/ turn-on·r/",. for." t'/PfII, Fig. 8 - Typlu/ turn-off.r/me for." t'/peI.
170
POWER TRANSISTORS
2N5879, 2N5880, 2N5881, 2N5882

Features:
Silicon N-P-N and P-N-P Epitaxial-Base • High dissipation capability
• low saturation voltages
High-Power Transistors • Maximum safe-area-of-operation curves
• Hermetically sealed JEDEC TO·31
TO-204MA package
Rugged Devices, Broadly Applicable • High gain at high current
For Industrial and Commercial Use • Thermal-cyclingrating curve
The RCA-2N5879 and 2N5880 are epitaxial- They differ in voltage ratings and in the
base silicon p-n-p transistors featuring high currents at which the parameters are con- Applications:
gain at high current. The RCA-2N5881 and trolled. All are supplied in the steel • Series and shunt regulators
2N5882 are epitaxial-base silicon n-p-n tran- • High-fidelity amplifiers
sistors. They may be used as complements to JEDEC TO-204MA hermetic package.
2N5879 and 2N5880, respectively. These • Solenoid drivers
devices have a dissipation capability of 160
watts at case temperatures up to 25 0 C.

2N5879· 2N5680·
2N5881 2N5882
.. vCEO .....•...•........•..•..... 60 80 v
.. vCBO •...•........•............. 60 80 V
.. VEBO ....•...................•.. 5 5 V
15 15 A TERMINAL DESIGNATIONS
: :F:::::::::::::::::::::::::::::: 30
5
30
5
A
A
C
o
E (Fl.ANGEI
.. PT
AtTC ';;;250 C ...•.......•..... 160 160
At T C >
.25o C ....•. derate linearlv 0.915----
.. 'TJ' Tltg •..•• _ .........•...•....•• --- -e to 200 - - - -
.. TL
At 1/16 in. 11.56 mm) from
case for 10. -----250 - - - - -
JEDEC TO-204MA
• For p-n-p devices, voltage and currant values are negative.
. L_-. r--
·
'00 'icE- 4 Y
•.
!
!
"-
~ Nk...l
1\ ~..,
4
t ~ •
~
4f-- f--
~
~.,
~~~ I ~ r-r-..,
-
f-- f--
:<; ~ .f---.II'C
i 1\1\ \ ~ ·
i
I-
e--'" ~~ t-
~ 4
I'-.. r....;
r--. i"- ~
I • • • 10 I. • • • I~
COLLECTOR EIIII"ER VOL TAG! I VCE'-V .IC,-501.01
I. I
. 4 •
,\~ 't~
"10 "
~
~. ~
0 ...
102
NUMID ", THIEIIIMLCYC!,.EIIiN THOUSMOS)
0 4 ... I
!'if~~
10
IICI-11&10Rl
H
2
10
2 4
•• I •
COLLECTOR CURRENT' 1 I-A
4
••
"'"
10
Fig. t- MlIxlmum Oplll'8ting sr., for.1I typtll. Fig. 2 - ThBrmsl-cycling rsting chBrt. Fig. 3 - TyplCIII dc betll chBrscter/$tiCl
for 2N5819 and 2N5880.
171
POWER TRANSISTORS
2N5879, 2N588~ 2N5881, 2N5882

ELECTRICAL CHARACTERISTICS, At Case Temperature 1":_, veE· ... v r--.
T C - 25°C Unless Otherwise Specified I • I I
i"
4
TEST CONDITIONS LIMITS I-- ~.,k,.~
-;- '0
CHARACTERISTIC
VOLTAGE CURRENT
Vdc Adc
2N5879·
2N5881
2N5880·
2N5882
UNITS i~,OO 2
••!e .........
I'-...
VCE VeE IC Ie Min. Max. Min. Max.
5
. a
~
"'
*
*
'CEX
TC= 1500 C
60
SO
60
SO
30
1.5
1.5
1.5
1.5
-
-
-
-
-
-
-
-
-
-
0
-
-
-
-
-
0.5
-
5
-
1
-
-
-
-
-
0.5
-
-
5
-
rnA
rnA
~
til
I
ll~
41---
2 4
-~...e
J
_I
• 0
-. . i" r-..
I'-
4
~
r--~
0 2
'CEO 40 - - 0 - - - 1 I
COLLECTOR CURRENT (ICI-.
10
* 'CBO 60 c - - - - 0.5 - - rnA Fig. 4 - Typical de beta characteristics

'E =0 SOc - - - - - - 0.5 for 2N5881 and 2N5882.
* 'EBO - -5 0 - - 1 - 1 rnA
* VCEO(sus)b - - 0.2 0 60 - 80 - V
4 2 35 35
* hFE a 4 - 6 - 20 100 20 100
4 - 15 - 4 - 4 -
* VBEa 4 - 6 - - 1.5 - 1.5 V
* VBE(sat)a - - 15 3.75 - 2.5 - 2.5 V
TJ-Z'·C
- 7 0.7 1 1 ~I
* VCE(sat)a V
15 3.75 - 4 - 4 I.• 11 1..
* fT' f = 1 MHz 10 - 1 - 4 - 4 - MHz i
* hfe' f - 1 kHz 4 - 2 - 20 - 20 § I.'
V /
~ 1/
* Cob, f - 1 MHz .10 .&. 17
2N5879·S0
2N58S1·S2
10C
10c
-
-
-
-
-
-
-
-
600
400
-
-
600
400
pF ~ ao l---~B£lSotl""lc/~r
~"8E"TVCE·4"
S
*~
- - 6 0.6d - 0.7 - 0.7 f.ls 0.'
1 I
*f-2-
ts VCC = 30 V - - 6 0.6d , - 1 - 1 f.lS ,G\,I),c/s.'O L
* tf
RIIJC
-
-
-
-
6
-
0.6d
-
-
-
O.S
1.1
-
-
O.S
1.1
f.IS
°C/W
0
, 4
VeE'
••I
j.

2 . ., 10
92CS-30205
,
*In accordance with JEDEC registration data. Fig. 5 - Typical voltage characteristics
-For p-n-p devices. voltage and curren~ values are negative. for 2N5879 and 2N5880.
apulsed; pulse duration ,;;;; 300 ,",S, d",y factor = 2%.
bCAUTION: Sustaining voltage, VCEO(sus). MUST NOT be measured on a curve tracer.
I
2
,
vcc· lOY
TJ
'e"a-IO
·2~·C-
.
10,
4
TJ - 2 5 · C _
~~C;I:O.~~
'8'-'12 -
2
1.61----
TJ ~25·C
:r-... ./' -- ...~

~
1#
::-:: ..-::; ';.
2
r-- r-:'
i 2~
~~
"
- ~ ... 1
=,
• •
w
..........
......
.........
w 1 . 2 - t---
~
> 0.8 _ "BEl,atl ,.,1 I C" S-'0 ~
{/
.., :~
~O.I ;: -
....... " V
O"El'.ftt .
;: td AT YBElofft-5 V ~
-
~
i,
..... ~ ""'i"- ~ ...-: ~
I 2
--.
V
. . , '0
'N: . VCEI.a'IJ.T\c"a~ ,.......
.,
_ _ 2N"79, 2N5880 (PHP) _ _ 2N5819,2N&880IPNPI
_ _ _ 2N5881, 2N5882 (NPNI _ _ _ 2N981, 2N5882(NPNI . o
2
2 , , 2 4
0.'
2 4 2 4
• 0 2 , 4 , 2 4 2
I
COLLECTOR CURRENT II I-A
I
COLLECTOR CURRENT (I:cl-A
'0 COLLECTO~ CURRENT (I C I-A
10
92CS-S0207 ttCI-50201 92CS-30206
Fig. 6 - Typical turn-on time for all types. F~q. 7 - Typical turn-off time for al/ types. Fig. 8 - Typical voltage characteristics
for 2N5881 and 2N5882.
172
POWER TRANSISTORS
2N5885, 2N5886
High-Current, High-Power, High-Speed N-P-N Features:
• Specification for hFE and V CE (satl up to 25 A
Power Transistors • Current gain bandwidth product
fT" 4 MHz (min.1 at 1 A
• Low saturation voltage with high beta
The RCA-2N5885 and 2N!i886 are epitaxial- regulators, dc-to-dc converters, inverters, and
base silicon n-p-n transistors intended for a solenoid (hammer)/relay drivers_ • High dissipation capability
wide variety of high-power, high-current These devices differ in maximum voltage • 90 mJ ESIb characteristic
applications, such as power-switching circuits, ratings_ They are supplied in JEDEC TO-
driver and output stages for series and shunt 204MA hermetic steel packages_
MAXIMUM RATINGS. Absolute-Maximum Values: TERMINAL DESIGNATIONS

2N5885 2N5886
*V CBO . 60 80 V
*VCEO(susl 60 80 V
"VEBO 5 V
.. IC . 25 A
*ICM 50 A
.. IB .' 7.5 A
IBM 15 A JEDEC TO-204MA
*P T
At TC '" 25D C 200 W
AtTC > 25°C Derate linearly 1.15 wf'c
See Figs. 1 and 2
- - - -65 to 200 - - - - DC
At distance;;' 1132 in. (0.8 mm) from

seating plane for 10 s max. 230 °c
.. In accordance with JEOEC registration data format JS-6 RDF-l_
CASE TEMPERATURE (TC)--C

...
1u 10
Fig. 2 - Oersting curWJ8 for 2N6885 lind 2N5886.
!:!
i0:5
0:
"u0:
..
~
U
oJ
oJ Ii: COLLECTOR-TO-EMITTER VOLTAGE (VCE)-"
C4SE'.1'l
V-I--
o
u
~~Jl
0
ii 2
'"~tOO. - --:t--= "....,~
"SS·C- 4
!! • ~
~ .- ""<-f-
~ 2
~ ~
I ·•
10
u •
COLLECTOR- TO-EMITTER 1I0LTAGEIVCEI-V

92CS-29B46
f
u
I · • ...
0.1 I
2 ....
10
.. ••
100
o'
Fig_ 1 - Maximum operating areas for 2N5885 and 2N5886, COLLECTOR CURRENT (I.e I-A
UtI-2,..!
Fig_ 3 - Typiclll de beta chBl'lICteristics III a func-

tion of collector current for 2N5885 and
2N5886_
____________________ ~------------------------------------------173
POWER TRA"'$ISTORS
2N5885, 2N5886
ELECTRICAL CHARACTER ISTICS, At Case Temperature (TC) = 2SOC
CHARAC VOLTAGE CURRENT
21115885 2N5886 UNITS
TERISTIC Vdc Adc
VCE V8E IC 18 Min. M;lx. Min. Max.
ICBO
60 a - 1 - -
80a - - - 1
ICEX
60 -1.5 - 1 - -
80 -1.5 - - - 1
mA
ICEX 60 -1.5 - 10 - - COL.LECTOII~1D.EMITTEItIATURATICIN VOL,..' [Yclc..t)]-V
TC = 150°C 80 -1.5 - - - 10
ICEO
30 - 2 - - Fig. 4 - Typical saturation iIolt8gB characterllticI for
40 - - - 2 2N6885 and 2N6BB6.
lEBO -5 - 1 - 1
4 3b 35 - 35 -
hFE 4 10b 20 100 20 100
4 25 b 4 - 4 -
VCEO{sus) 0.2 60 - 80 -
VBE 4 10 - 1.5 - 1.5
VBE(sat) 25 b 6.25 - 2.5 - 2.5
V
15 b 1.5 - 1 - 1
VCE{sat)
25 b 6.25 - 4 - 4
IS/b
tp = 1 s 20. 10 - 10 - A
non rep. ttc'~IIl4"
Fig. 5 - Typical tranlfBf CharacterinlCl for

ESIb 2N5BB5 and 2N6BB6.
L=125~H, -1.5 10 6.25 - 6.25 -
RBE =51 n • OOLLECTQIII! SUPPLY VOLTAGE (Vcc:)-SOY
mJ le/I,-1O
L=20 mHo n'c V
·
• CASE TEW£RATURE (TCJ'
0 3 90 - 90 - t
I
RBE=l00n "l:.
" •
t, .... i--""
Ihfe I
f= 1 MHz
hfe
10
4
1
3
4
20
-
-
4
20
-
-
•10.1,
!!
f = 1 kHz
Cobo lOa - 500 - 500 pF
J ' "'"-
! •
t
-
f·= 1 MHz li
10 1 - 0.7 - 0.7 ~
tr
VCC=
ts
30
10 lc - 1 - 1 ~ "'" 4"10 •• 'toO
tf 10 lc - 0.8 - 0.8 COLLECTOR CURRENT (lei-A
Fig. 6 - Typical dalay·time and ri.e-time
92(1-25101
ROJC 20 5 - 0.875 - 0.875 °elW characteristic. IS a function of

*In accordance with JEDEC registration data format JS-6 RDF·l. col/actor current for 2N5BB5
avcs· and2N5B86
bpulsed; pulse duration = 300 /lB, duty factor = I.S%. 10, ClOLLECTOR ......' VOLT_ (Vcc)'IOY
cIS1 =-III:!'
~
t
.
, :EIII'-IIz
lc/I"IO
CASE TD1PIMTUftE (Tel-nee
I• r--. i'--!!.
•
I
!! .~ ~
If
E
I ...... ~
~
• ,,
OJ
• , 10
COLLECTOR CURRENT elel-A
• • • 100,
·HCI-iMOI
Fig. 7 - Typical storage-time and fIIl/·time
characteri.tic. as a function of
collactor current for 2N5885
and 2N51iB6.
174
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

Silicon N-P-N and P-N-P Medium-Power Transistors
~eatures:
General-Purpose Types for Switching Applications • 2N5954-2N5956 complements to 2N6372-2N6374
• 2N6465, 2N6466 complements to 2N6467, 2N6468 '
RCA-2N5954, -2N5955, and -2N5956 are Types 2N5954, 2N5955, and 2N5956 are • Low saturation voltages
multiple-epitaxial p-n-p transistors_ RCA- available with factory-attached heat radiators • Maximum-safe-area-of-operation curves
2N6372, -2N6373, and -2N6374 , are multi- as RCA typas 40829, 40830, and 40831,
ple-epitaxial n-p-n transistors_ They are com- • Thermal-cycle ratings
respectively. The other devices may be
plements to 2N5954, 2N5955, and 2N5956. obtained with heat radiators on special order. • Hermetically-sealed JEDEC TO-66 package
The RCA-2N6465 and 2N6466 are multiple- Radiator versions are intended for printed-
circuit·board applications, and differ electri- TERMINAL DESIGNATIONS
epitaxial n-p-n transistors. They are comple-
cally from their basic 'counterparts only in
E€UFLA~GE)
ments to the 2N6467, and 2N6469 , multiple-
epitaxial p-n-p transistors. These devices device dissipation (5.8 W up to 2SoC ambient)
differ in voltage ratings and in the currents and thermal resistance (30·C/W max. at T A
at which the parameters are controlled. ~ 25°C).
o 0
All are supplied in the JEDEC TO-66 package. B
'"1-17511
MAXIMUM RATINGS, Ablolute-M8ximum VslulI$:

JEDECTO-ae
2N1ft4.2NI8H 2N8372·2N837" 2_2N8488
<..
N.p-N ZN8374 ZN8373 2M837Z 2N6465 2N6466
I£\j
PoN.p 2M1IIII51: 2MIIIIS: ZNlIIII4: 2N6467. 2N646S·
4Cl831 40830 40128
*vceo ............................... 50 70 90 110 130 V
*vCExlsusJ
'VBE-- 1.5V, RBE -l00n ........, 50 70 90 110 130 V
VCE':~:J= 100 n ..................... 45 65 B5 105 125 V C t •
VCEolsusJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 60 80 100 120 V IHUT RADIATORI
*vEBD ............................... 5 5 5 5 5 V JEDEC TO. . wl1b Hut R.i• •
·IC··········.···· c................... 6 6 6 4 4 A -.e. _3D. 40831
·I B············· .. ···· .... · .... ·· .... · 2 2 2 2 2 A
*PT
At Tc up to 26 DC ................. 40 40 40 40 40 W
12NI374J 12N8373J 12N6372J
12N5966J 12N5965 J 12N5964 J
At TA up tD 25 DC •...•••.••..•••.. 5.8 5.8 5.8 W
D ' 140831 J (40830) (40828)
At TC abDve 26 C ................. ----.... Derate linearly to 2000 C _ _ _ __
*TJ' Tstg ............................. -66 tD +200 _ _ _ _ _ _ __ DC
*TL
At distances ;;. 1/32 In. 10.8 mm) from
. .tlng plane fo< 10. max. .......... +235 _ _ _ _ _ _ _ __
"Dc
• JEDEC types in accordance with JEDEC registration data fDrmat JS.6-RDF·2.
·FDr. po""" device., vDltage end current values are negetlve.
'0 100 1150 2
CASE OR AMBIENT TEMPERATURE ITe OR T"I- *C
92CS-27699
Fig. 1 - DiSSipation derating chart for all types.
t •• • •
104 ,
NUif81Jt f11 THUMM. CYCLES
I'
tIC.4t4M
w,,· 'o- .M''''.' VOLTAGE COI.L.f::CTOR·TO·EMITTER VOLTAGE tVal- II
l1l.I-"27111
Fig. 2 - Thermal-cycling rating chart for Fig. 3 - Typical input characteristics for F'g_ 4 - Typical output characteristics for
all types. 2N5954-56, 2N6312-14 and 2N5954-56, 2N6312-14 and
40829-31.· 40829-31.·
+For p-n-p devices, voltage and current val ues are negative.
________________________________________________________________ 175
.J
.;..../
POWER TRANSISTORS
2N5954-2N59S6, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

ELECTRICAL CHARACTERISTICS, At CIlIIf1 TllfTlpIIf'IItiJffI
---
(TCl =2!JOC unl_ othfll'Willf1lP.:ifitJd
TEST CONDITION~ LIMITS U
VOLTAGE CURRENl 2N8374 2N8373 2N8312 N
CHARACTERISTIC 2N696( 2N6966+ 2N6964+
Vdc Adc 40831 40830+ 408~ ••T
VCE VSE IC IS Min. Max. Min. Max. Min. Max. I
--- 100
ICER 35 - 100 - - --
RSE=l00n 55
75
-
-
-
- - -
- 100
pA
* ICEX 45 -1.5 - 100 - - - --

RSE=l00n 65 -1.5 - - - 100 - pA
85 -1$ - - - - - 100 9ZL5-"2M'
n. --
-.-- - - -
* RSE=l00 45 -1.5 2 Fig. 5· Typical transfer characteristics for
TC=1500C 65 -1.5 - - 2 - mA 2N5954·56, 2N6372·14 and
85 -1.5 - - - - 2 40829·31.·
25 - 1 - - - -
ICEO 45 - - - 1 - - mA
65 - - - - - 1 ~
:t~CTOR;TO;E~11 TEIt VOLTi! 'IYC!I.~V
;; 4t--~ nMP£ltAfUftE 1'1: ' =

IESO -5 - 0.1 - 0.1 - 0.1 mA
i • ~J.~f8.l
•• .., !,,-c
4
4
3a
2.58
20
-
100
-
-
20
-
100
-
-
-
- ii! :i"""
I -40-c
hFE 4 2a - - - - 20 100
~
sa - - -
VCEO(sus)
4
O.la
5
40b -
5
60b -
5
!jOb - I· I
"
I ··
I
VCER(sus)
RBE=l00n
VCEX(sus)
RSE=l00n
O.la
-1.5 O.la
45b
50b
-
-
65b
70b
-
-
B5b
gob
-
-
V 8
~O,OI
.. aO.1 al
CCLLECTOR CufllRt:NT (le'-A
.
..ca-.....
-10
VSE Fig. 6· Typical de beta characteristics for

All types 4 3a - 2 - - - - 2N6467 and 2N6468.
VCE(sat)
All types
All types
2N6372·2N6374
4
4
4
2.5 a
2a
sa
3a
2.5 a
0.3
0.25
- -
-
- 3
-
-, 1
- -
-
-
-
-
-
2
-
3
-
1
-
-
-
-
-
-
2
3
-
-
V
V
) ....
I- e,..
-
...........
Tl
--4V
-
17:,.
~
2N5954-2N5956
;!a
6
0.2
1.2
- -
- 2
- -
2
- 1
2 1- ~r-- r-....
Ihfel
f=l MHz 1'=•• .....
'- ,\.
hfe
2N6372-2N6374
2N5954-56,40829-31
4
-4
1
-1
4
5
-
-
4
5
-
-
4
5
-
I:
8 10
~~
I'"
f=1 kHz 4 0.5 25 - 25 - 25 - -.... -I.
R8JC
2N5954·56,
2N6372-74
- 4.3 - 4.3 - 4.3 Fig. 7· Typical de bata characteristics for
2N5954·2N5956 and 40829-40831.
°CM
R8JA
40829-40831 - ~O 30 30
* In accordance Wtth JEDEC registration data format JS-6 RDF-2 for JEDEC (2N6954.2N6958 J... COLJ.lCTCIIt-TO-!MlTfDiI YOLTAII! (Ve!'- 4 Y
2N6372·2N6374 2N6465-2N6468 40829-40931' typei.

i ..o ea' ·~.l.I.''cI!''''C
r:I :
T.Il
~
a Pulsed, pulse duration = 300 P.5, duty factor = 1.8%.
b CAUTION: Sustaining voltalJlls VCEO('us), VCER('u,), and V CEX(su.) MUST NOT ba maasured -40"C
on a curve tracer. r- ~
',,,~
I I.• 20
1\
8
0.01 • .. 0.1
I • II
COLLECTOR C\lRA£NT trel-A

I • ...I.
,2CS-,.H.fU
Fig. 8· Typical de bata characteristics for
·For pon.,. device., voltage and current valu.- ar. negative. 2N6372·2N6374.
176
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

ELECTRICAL CHARACTERISTICS. At Case Temperature (TC) = 25°C ~ : C~CTOR'TO-E"ITTER VOLTAGE (VCElo4V
unless otherwise specified

VOLTAGE CURRENT 2N6465 2N6486
CHARACTERISTIC UNITS
Vdc Adc 2N6467+ 2N646s+
ICER 95 - 100 - - jJA
RBE=100n 100 - - - 100
. ICEX 100 -1.5 - 100 - - jJA e
RBE=100n 120 -1.5 - - - 100 0.01
4 6
0.1
COLLECTOR CURRENT tIcl-A
I
4 6&
10
RBE = lOOn. 100 -1.5 - 2 - - mA Fig. 9 - Tvpical de beta characteristics for

~~2~1.
TC = 150°C 120 -1.5 - - - 2 2N6465 and 2N6466.

50 - 1 - -,
" ICEO 60 - - - 1
mA
COl.LECTOR-TO-EMITTER VOLTAGE tVCElo"V +_+-++-1
- - i
" lEBO -5 0.1 0.1 mA 20 CASE TEMPERATURE tTcl.25"C
.. hFE
4
4
1.sa
4a
15 150
5 -
15 150
5 -
I II
~ ~~~-~~~~-~~~-+-+-~
.. -
~ ~.~~-~~~~-+-~+--+-+-~
~ "I-+---b"+-~=I--klI-+-I--+---+-+-l-l
I>.-~
VCEO(sus) O.la l00b 120b -
VCER(sus)
RBE=100n O.la 105b - 125b - V
" VCEX(sus) ~ 41--4--+-+-++-1---+-~~~-4-~
RBE=100n -1.5 O.la 110b - 130b -
. VBE
4
4
1.5a
4a
-
- 3,5
-
-
2 ,2
3,5
V o,~
4 66
Q.I I
COLLECTOR CURRENT t1cl-A
4 ••
10
All types 1.sa 0.15 - 1,2 - 1.2 Fig. 10- Tvpical gain-bandwidth product ;or
VCE(sat) 2N6465-2N6466 4a 0.8 3" - 3" V 2N5954-56, 2N6372-74, 2N6467-68,
2N6467-2N6468 -4a -0.8 - -4" - -4" and 40829-31. (For p-n-p devices,
.. Ihfel
voltage and current values are negative.)
f = 1 MHz 4 1 5 - 5 -
.. hfe >00
COLLE('TOR-TO-EMITTER VOLTAGE (VCElo"V
~'
f = 1 kHz 4 0.5 25 - 25 - ~.
- 4,3 - 4.3 °C/W
),
,..c.t ifc.t ...~,
ROJC
* In accordance with JEDEC registration data
format JS·6 RDF-2,
• For p-n-p devices, voltage and current values
are negative.
a Pulsed, pulse duration = 300l's,duty factor = 1.8%
b CAUTION: Sustaining voltages VCEOIsus}. VCERIsus},
and VCEXlsus} MUST NO T be measured on a curve tracer.
I
.0
o
0.1 0.5 I 1.5
BASE-TO-EMITTER VOLTAGE 1Vs£I-V

2N6465 and 2N6466.
COl.UCro..-TO-EMITTER VQl..TAGE 1Vct).-4V •

i, T
J...-
1
1-250 ~
"- 1
• i! •
.-Ii ..
t!
I , 1\
I•
lASE CURRENT ''ta'. SOD"'"
150mA
.ow
a-
I,
z
~
• COI.LECTOR -TO-EMITTER VOLTAGE I VCE).4V
CASE TEMPEflATU"E ITe JoS"C
§
~
2
,00'-
"'
20"
.
- & -I -I.'
BASE-TO-EMITTER VOL.TAGE 1VI£I-\I
0.01
. . ..II . . ..I 0,1
COI-I..[CTOfI CURRENT IIcl-A
,
9leS-zltlu
8 10 12 14
COLLECTOR-TO-EMITT£R VOLTAGE CVCEI-V
'0"
Fig. 12 - Typical input characteristics for Fig. 13 - Typical gain-bandwidth product Fig. 14 - Typical output characteristics for
2N6467 and 2N6468. for 2N6465 and 2N6466. 2N6465 and 2N6466.
171
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N646S-2N6468, 40829-40831
6 6
COLLECTOR-TO-EMITTER IIOLTAGE IVCEI-V 10 100 1000
t2cs-2Ie41 COLLECTOR-TO-EMITTER VOLTAGE IVCEI-V
92CS-261558
Fig. 15· Maximum operating arl18s for 2N5954·56, 2N6372·74, Fig. 16· Maximum operating areas for 2N6465 and 2N6466.
and 40829-31. +
.. T.. A: U
i
~ ..
I'_
u.
~.z - 0.:-..... +......

~
u .,
-10: :!:
o -2 -4 --6 -8 -10 -12 -14

.,. t·. ... .
+ .. +-<-+
~
..... .
COLLECTOR-TO-EMITTER VOLTAGE IVCE)-V
Fig. 18· Typical output characteristics for

2N6467 and 2N6468.
COLLEC~-TO-E"'TTER VOLTAGE YCE)--4Y::

HT ::::1:::' :::: co:: co::
COLLECTOR-TO-EMITTER VOLTAGE (VcEI-V

92CS-UtlIO
Fig. 17· Maximum operating a'l18s for 2N6467 and 2N6468.
.... .,.0.
'+ ill! t··....
;
"t>
BASE-TO-EMITTER VOLTAGE IYBE)-Y
+For p-n·p devices, voltage and current Fig. 19· Typical transfer characteristics
values are negative~ for 2N6467 and 2N6468.
.178
POWER TRANSISTORS
2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831

-... ~ ... COLLECTOR SUPPL'tVOlTAGE (Vcc'o-30V
COL.L.ECTOR SUPPLY VOLTAGE (Vee'- 30V
e' COU-EtTOR-to;-EMITTER VOLTAGE ~VcEI. 4 V ~.::- i: :: CASE TEMPERATURE I1C'.U"C
Tu
CASE TEMPERATURE (Tel-2'·C
ISI"182"le /IO
'2 181'IB2'lc"~
RN·OP,.. r""E (t
OFF'
LO
,
~
08
0 .•
"
~ 06
i
a.
i 0.4
TUFIH-O~ T'ME (tON' 02

0.2
2 ,
~. -2 -~
COL.LECTOR CURRENT t Ie I-A
IASE-lO-EMITTER VOl.TAGEIVBE' - V COLLECTOR CURRENT I1CI-'"
Fig. 20 - Typical transfer characteristics Fig. 21 - Typical saturated switching Fig. 22 - Typical saturated switching
for 2N6465 and 2N6466. characteristics for 2N5954-56 characteristics for 2N6372-
and 40829·31. 2N6374.
co..l.ECTOR SUPPLY VOLTAGE (Ycc)e!O v

CASE TEMPERATURE (TC)-2S·C
III-II2-Xe/IO
l2.5 ,
~ z I 08
!
TURN.~OFF r'ME (, + ~ 0.6
OFF); Ii
~ 04
'TURN-OM T_ UoMl
0.5
"TOR""",
7'"-E (t.)
I 2 3 -2 -3
COLLECTOR CURRENT l1eI-A COLLECTOR CURRENT I1CI- A
Fig. 23· Typical saturated switching Fig. 24 - Typical saturated switching

characteristics for 2N6465 characteristics for 2N6467
and2N6466. and2N6468.
_______________________________________________________________ 179
POWER TRANSISTORS
2N6032,2N6033
High-Current, High-Speed, High-Power Transistors
SiliconN·P·N Types Features:
For Switching and Amplifier Applications • Low Vcebatl =1.0 V max. at 40 A, 1.3 V max. at 50 A
in Militarv, Industrial, and Commercial Equipment • Maximum Safe-Area-of-operationCurve... ISIb limit lina betlinning at 24 V
• FastStoraga Tlma ..... =1.5 ~s max at IC· 40 A (2N6033) 50A 12N5032)
• High-Currant Capability ... VCElsat) & VBE measured at Ie =40 A 12N5033)
RCA Types 2N6032 and 2N6033* are epitaxial silicon -50A (2N5032)
n-p-n transistors hao.ting high-current and high-power handling • High..,. 1140 W max. at TC - 25OC)
capability and fast switching speed. The 2N6033.is similar to
the 2N6032; they differ in maximum values for continuous MAXIMUM RATINGS, Absolute Maximum Values:
collector current and sustaining voltage. 2N6032 2N6033
• <'OLLECfOR-TO-BASE VOLTAGE. VCBO 120 150 V
They are supplied in modified TO-3 hermetic steel packages TERMINAL DESIGNATIONS
<X>LLECTOR·TO·EMITTER
with O.SO-in. diameter pins.
SUSTAINING VOLTAGE:
c
'CQ)
-Formerly RCA Oev. TypesTA7337 andTA7331A, respectively. With base open. v CE:O(sus} 90 120 V
With external base·to-cmitter
resistance (RBE)~ 50 n .. VCER(sIlS) 110 140 V
• With external base·to-cmitter
Applications:
resi~tance (RBEI ~50 n &
• Switching-control ampUfien VBE~·I.SV . VCEX(sU.) 120 ISO V
• Power gates .. EMITTER·TO·BASE VOLTAGE. V EDO 1 1 V
• Switching regulators
.. CONTINUOUS COLLECTOR CURRENT 50 40
• Power·switching circuits Ie
.. BASE CURRENT 18 10 10 Modified JEDEC T0-3
• Power oscillators .. IEMIITER CURRENT . . IE 50 40 A
• OC-R F amplifiers '" TRANSISTOR DISSIPATION: PT
• Converters At case temperatures up to 2S oC
• Inverters and VCE up to 24 V . 0 140 140 W
• Control circuits At (.~dse temperatures above 25 C Derate linearly to 200'oC
TI::MPERATURt: RANGE:
Storage &. Operating (Junelion) . -65 to +200 °c
• PIN TEMPERATURE (During Soldering):
At distance.~1/32 in. (O.S mm)
from seating plane for 10 sma" 230
·In accordance with JEOEC registration data format..l8-6 ROF·1, .

°c
~
~
140 COLLECTOR-TQ-EMITTEfi VOLTAGE {
120
1-2..SV
........
LIcaSOA
.....
~.I:2N60:m
~ 100 III--¥
W .. Ic~:~
2N&0331
~ ~o
I 80
-r---:~.t.." .
\
$>1(,1f V
I
00
.....e- l - '\~
40
t V ~ II
. ... ... . ... ", ...

20
I! 0./
V
,
0.01 0.1 1 10 100
COLLECTOR CURRENT IICI-"
Fig. 2 . Typical dc·beta characteristics

for both types.
....Z COlLECTOR-TO-EMITTEIit VOLTAGE (VCE)- 2 V

I&J
~
60
aa:
o
U
.... .0
I&J ~
30
."
:J
o ~~ 20
u
10
~ M ~ ~ I ~ W ~ ~
BASE'TO-EMITTER VOLTAGE (VIEI- v
Fig. 3 . Typical transfer characteristics

for both types.
10 4 8 8 100 4 6 8 1000
COL.L.ECTOR-TO-EMITTER VOL.TAGE (VCEI-V
92CS-16020 R I
Fig. 1 • Maximum operating areas for both types.
.180
POWER TRANSISTORS
2N6032.2N6033
ELECTRICAL CHARACTERISTICS, Ca.. Tamperatu,. ITcl - 25"C Unl... O.horwl.. Specified
TEST.CONDITIONS LIMITS
CHARACTERISTIC SYMBOL VOLTAGE CURRENT

V de A de
2N'6032 2N6033 UNITS .I
!SO
40
~
VeE" VBe Ie 18 ~in. Max. Min Max.
0.'
Collector-Cutoff Current: 80 0 10 10 mA
ICEO BASE CURR£NTaBl·0_2~ A
With base open
Wltn base-emitter 110 -1.5 12
mA
junction reverse biased 135 -1.5 10
ICEV I 2 3
llJ() -1.5 15 10 mA
COlLECTOR-TO-EMITTER VOLTAGE l'o\:El-V
* Emitter-Cutoff Current lEBO -7 0 10 10 mA

Collector-ta-Emitter for both types.
Sustaining Voltage:
VCEOlsus) - 0.2 b 90' 120'
(See FIgs. 12 & 13) COl.l.ECTOR-TO-EMITTER VOLTAGE !YCE)-2
With base open

With e)(ternal base to emitter
VCERlsus) 0.2 b 0 110' 140' ~.~~
resistance (ASE) < 50 D. +1+
With base-emitter junction reverse VCEXlsusl -1.5 0.2b 0 120' 150'

bi.sed & RBE < 50 n
50b
'" Base-to-Emitter Saturation Voltage VBEI,.tl
40 b 4
SOb
Base-to-Emitter Voltage VBE 40 b -
'" Collector-to-Emitter SOb 1.3
VCElsatJ
Saturation Voltage 40 b
0.2 0.4 0.6 o-s I 1-2 1.4 1.0
2.6 50 b - 10 50 SASE-TO-EMITTER VOLTAGE IYaEI-V
'" DC Forward-Current Transfer Ratio hFE 40 b 10 50
Fig. 5 - Typical input characteristics
Second-Breakdown Collector Current 24 5.8 e 5.8e
IS/b A for both types.
With base forward biased. t = 1 s 40 0.g e 0.ge
non repetitive CASE TEMPERATUREITCI-2~·C
SERIES BASE RESISTANCE (RBE I-50
20 62 62 mJ 1 20
~,
With base reverse biased ESlb ·4
IL = 310"H, RBE = 5 m }
Magnitude of common-emitter E ,,-
small-signal. short-circuit,
forward-current transfer ratio
Ihlel 10 10 10 ~
~
~~
~~~ t---,.
1= 5 MH7 10
II> Gain-Bandwidth Product

1= 5 MHz
IT 10 50 50 MHz g
~
. ~'. ~
""-.
Output Capacitance:
Vce = 10 V, I = 1 MHz
Cobo 81J() 800 pF
~
0
100 •
I'l ~ r-
• 1000
~=-i
INDUCTANCE (LI-JoIoH
Thermal ReSistance
(Junction-te-Casel
ROJC 10
"0 1.25 1.25 °C/W
Fig. 6 - Maximum reverse-bias second-
·'n accordance with JEDEC registration format JS-6 RDF-1,
breakdown characteristics for
• CAUTION: The sustaining yo'tagss VCEOfsus). ~CERf~51. and VCJ:xl,susi MUST NOT be mNJurad on a curve tracer.
b Pulsed: Pulse duration 300 /J.S; duty factor <:; 2%. -
both types.
CASE TEMPERATURE ITc ,_ 2~.C
~ 140 I I
~
I'--- ~tJl
SWITCHING TIME CHARACTERISTICS, Ca.. Temperature ITC) = 25"c
ii
15~
130
TEST CONDITIONS LIMITS ;i

~J
120
...........
~,j' VeER I,,,,,
Vdc Adc cE..; 110
VCE VeE Ic Ie Min. Max. Min. Max. ~~
~~ ~
~~ ..
.r-. r-..... . .
Saturated Switching Time: (VCC=30V, ji: 100
.
IBl = IB21: B
Vcm(lUd
Rise Time - - 50 5 - 1 - - .0
,
" - - -
j.IS 4
",
·
10
40 4 - - 1 00
EXTERNAL eASE-TO-EMITTER RESISTANCE IRnl-O
IK ~K
Storage Ti me 's - - 50 5 - 1.5 - - j.IS

- - -
· Fall Time 'f
-
-
-
40
50
40
4
5
4 -
0.5
-
-
-
1.5
0.5
j.IS
Fig. 7 - Collector-to-emitter sustaining
voltage characteristics for both
types.
__________________________________________________________________ 181
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _...:..._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6032,2N6033
c
......I
0.1
10 68 '00
92CS'17445
Fig. 8 - Maximum operating areas for both types at case temperature (T cl =

100oC_
COLLECTOR SUPPLY VOLTAGE (Vee I- 30 1/

le-IO Ie o-IOle
I.• ~
I.'
J'--...
r
~
~
t-
j: 0.8
..' ~r
'''V
~ !-
• 10 20 30 4U 50 60 ,. 20 40 60
COLLECTOR CURRENT 11cl-" SERIES BASE RESISTANCE IRSEI-:2CS_1144?
Fig_ 10 - Maximum reverse-bias second-

Fig. 9 - Typical saturated switching breakdown characteristics for
characteristics for both types. both types.
182 ___________ ~ ________________________ ~ _____________

POWER TRANSISTORS
2N6077 -2N6079
High-Voltage, High-Power Silicon Features:
• Maximum safe-area-of-operation
N-P-N Transistors curves
For Switching and Linear Applications • ,Low saturation voltagas
RCA 2N6077. 2N6078 and 2N6079 are ratings make this device useful for switch- VCER(sus) = 300 V (2N6077)
multiple epitaxial silicon n-p-n power ing regulators operating directly from a 275 V (2N6078)
transistors utilizing a multiple-emitter- rectified I 10-V or 220-V power line. The 375 V (2N6079)
site structure. Multiple-epitaxial construc- unit is rated to take surge currents up to • High dissipation rating: PT = 45 W
tion maximizes the volt-ampere charac- 5 A and maintain saturation.
teristic of the device and provides fast
switching speeds. Multiple-emitter-site de· The 2N6079 is characterized for use in
sign ensures uniform current flow through- inverters ··Operating directly from a recti-
out the structure, which produces a high fied 110·V power line. The leakage cur· TERMINAL DESIGNATIONS
; IS(i;> and a large safe-operation area. rent is specified at 450 volts; therefore
These devices use the popular JEDEC the device can also be used in a series
TO-66 package; they differ mainly in vol· bridge configuration on a 220-V line. The
tage ratings, leakage·current limits, and VEBO rating of 9 volts eases requirements
VCE (sat) ratings. on the drive transformer in inverter appli·
cations. Storage time, an important factor
The 2N6077 is characterized for switching
in the frequency stability of an inverter,
applications with load lines in the active JaDEeTo'"
is specified in Fig. 1 I ,which shows varia-
region. These applications include sweep
tion in storage time with variation in load
circuits and all circuits using the transistor
current from zero to maximum (4 A).
as an active voltage clamp.
Type 2N6078 is characterized for switch-
ing applications with the load line extend·
ing into the reverse-bias region. Its voltage
MAXIMUM RATINGS, Absolute-Maximum Values: 2N8077 2N6078 2N&078

"COLLECTOR-TO-BASE VOLTAGE . . . • . . . . . . . . . . • . VC80 300 275 375 V
With base open . . . . . . . . . . . . . . . . . . • . . . . . . • . VCEO(SUS) 275 250 1 360 v
" With reverse bias (V BE) of -1.5 V . . . . . . . . . . . . . . . VceX(sus) 300 275 375 V
With extarnal base-to-emittar resistance (RBE) <;'SOO n VCER(SUS) 300 275 375 V
"EMITTER-TO-BASE VOLTAGE . . . . . . . . . . . . . . . . . . . VEBO 6 6 9 V
"COLLECTOR CURRENT: IC
Continuous . . . . . . . ' . . . . ". . . . . . . . . . . . . . . . . . 7 7 7 A
Peak .............................. . 10 10 10 A
"CONTINUOUS BASE CURRENT . . . . . . . . . . . . . . . . . 4 4 4 A
"TRANSISTOR DISSIPATION:
At case tamperatures up to 25°C •...............•..... 45 45 45 W
At case tamperatures above 250C ........•...••...•.•.• Oarata linaarly to 200°C
"TEMPERATURE RANGE:
Storage & Operating (Junclion) . . . . . . . . . . . . . . . . . -6510 +200
"PIN TEMPERATURE (During Soldering):
AI distances:> 1132 in. (0.8 mm) from case for 10 s max . . . . 230
" 2N-8eries Iypes in accordance wilh JEDEC ragislration data formal (JS-6. RDF-l).
_______________________________________________________ 183
POWER TRANSISTORS
2N6077 ·2N6079
ELECTRICAL CHARACTERISTICS, At Case Temperature (T d = 2!f'C unless otherwise Specified
CHARACTER ISTIC VOLTAGE CURRENT
SYMSOL 2N6077 2N6078 2N6079 UNITS
V de A de
VeE VSE IC IS Min. Typ. Max. Min; Typ. Max. Min. Typ. Max.
ICEO 250 0 - - 2 - - - - - - rnA

250 -1.5 - - 5 - - 0.05 - - - rnA
* ICEV 450 -1.5 - - ~ - - - - - 0.5
(TC = 125°C) 250 -1.5 - - 8 - - 0.2 - - - rnA
450 -1.5 - - - - - - - - 5
-6 0 - - 1 - - 1 - - -
rnA
* lEBO -9 0 - - - - - - - - 1
* VCEO(SUS) 0.28 275 b - - 250 b - - 350b - -
V
VCER(SUS)
(RBe = 500 n)
0.2" 300b - - 275 b - - 375b - -
* V VEBO
(IE = 1 rnA)
0 6 - - 6 - - 9 - - V
* hFE 1 1.2- 12 28 70 12 28 70 12 28 50
1.28 0.2 - 1.0 1.6 - 1.0 1.6 - 1.0 1.6
* VBE(sat)
38 0.6 - 1.2 1.9 - - - - - -
V
4" 0.8 - - - - - - - 1.3 2
58 1 - - - - 1.5 2 - - -
1.2" 0.2 - 0.15 0.5 - 0.15 0.5 - 0.15 0.5
VCE(sat)
3" 0.6 - 0.25 1 - - - - - -
V
48 0.8 - - - - - - - 0.5 3
58 1 - - - - 0.8 3 - - -
Cobo pF
- - - - -
. (VCB=10V, f = 1 MHz)
Ihfel
10 0.2 1 7
150
-
-
1 7
150
- 1 7
150
-
(f = 1 MHz!
ISlb
(Pulse duration (non· 50 0.9 - - 0.9 - - 0.9 - - A
repetitive) = 1 s)
ES/b
(RB = 50n, L=l00pH)
-4 ~ 0.45 - - 0.45 - - 0.45 - - mj
td" 1.2 0.2 - 0.02 - - 0.02 - - 0.02 -

* t C
r 1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0.75
/.IS
* t C
S 1.2 0.2 - 2.8 5 - 2.8 5 - 2.8 5
* tl 1.2 0.2 - 0.3 0.75 - 0.3 0.75 - 0.3 0.75
R6JC 20 2.25 - - 3.9 - - 3.9 - - 3.9 °C/W
*2N,series types in acCordance with JEDEC registration data format (JS-6, RDF-').
• Pulsed; pulse duration';;; 350/.ls, Duty factor = 2%.
bCAUTION: The sustaining voltages VCEO(sus), and VCER(sus), MUST NOT be measured on a curve tracer.
cVCC = 250 V, IBl = IB2'
184 _______________________________________________________________
POWER TRANSISTORS
2N607 7 -2N6079
1:t ... 0' ,

COLLECTOR CURRENT IICI-A
I
~
Fig. 2 - Typical normalized dc beta
~
v 0.1
elI-1'1lmElllll
l! 48,
0.1
2
I
COLLECTOR CURRENT I1CI-A
... '0
IQ Fig. 3 - Typical normalized dc beta

COLUCTO~-TO-EMITTI~ VOLTAOE (VCEI-V characteristics for all types.
'ZCI-llon
Note (Figs. 2 & 3): To estimate min., max. "FE at any current and
Fig. 1 - Maximum operating areas for all types. temperature, read normalized de lorward.curranl trlnsfer rallO and
multiply by min., max. specifications g.ven In Electrical Character .
•stlesChart.
COLLECTOR-TO-EMITTER VOLTAGE ("'c~'5 V
•
1u
...
... 0.5 I 1.5
i
u
BASE-rO-EMITTER VOLTAGE ' ....

'-V
for all types.
6 8 6 8
10 100
COLLICTOIll-fO-EMITT[~ VOLTAOE I VC[I-V
IICI-llon 92C5-1902.8
Fig. 6 - Typical saturation voltage

Fig. 4 - Maximum operating areas for all types.
__________________________________________________________________ 185
POWER TRANSISTORS
2N6077 ·2N6079
CASl TEMfitRATUME I TC ,- n" c
0·'
0·'
0.'
!lo. ••
"-l- _+1
I 2 :5 .. , 6 7 2 3 " 5
COLLICTOft-TO-EMITTER VOLTAGE ''1eEI..-V COL.L.ECTORCUftft£NT 17C;1-4 COLLECTOR CURREHT(tcl-A
"""190'0
Fig. 1· Typical output characteristics Fig. 8 - Typical storage-time characteristics Fig. 9· Typical rise-time characteristic
for all types. for all types (with constant forced for all types.
gein).
0.12 PULSE OURATION S 20"..

PULSE OURATION:S 20,., REPETITION RATe:' LOOHI
,. REPETITION RAlEo,OO HI
COi.LECTOR SUPPLY VOLTAG! ('1Cc:'0250V
CASE TEMPERATU"! ITe ,. 25-<:
0.11
COL.LECTOR SUPP"", VOLTAGE
CASE TEMPERATURE ITe I ' UOC
IVCCI'2~v
DC anA (liFE'" THROUGH 10

1'1' 0.5 A
't 0.1
8 1 ' -1 82
1:0.09
a
~
~
lAst CURtlilHT tlel-loomA
.
w
j: 0.08
~
--
...............................
~ , go.or
0.06
I 2 1 " ~ , ., • t » " ,
0.0'
,
C~)I.LI:C;TOR·TO-!"ITT!R V(K.TAGE IVCEJ-V "cs,,"oa1 COLLECTOR CURAIIIT Il:c I_A COLLECTOR CURRENT'IeI-A
tlC'-lIoal .tel-L,Ol'
Fig. 10· Typical output aharacteristics Fig. 11 - Typical storage-time characteristics Fig. 12 - Typical delay-time characteristic
for all types. for all types (with constant-base for all types.
drives).
Fig. 13 - Typical fall-time characteristic

for all types.
186 ___________________________________________________________
----______________________________________________________________________________ POWERTRANSISTORS
2N6098-2N6103, RCA3055
High-Current Silicon N-P-N VERSAWATT Transistor
Features:
Designed for Medium-Power Linear and Switching Service
in Consumer, Automotive, and Industrial Appl ications • Low saturation voltage -
veE (sat) = 1 V max. at Ie = 4 A
These RCA types are hometaxial-base variety of medium-power switching and (2N6098, 2N6099)
silicon n·p·n transistors. Types 2N6098, linear applications, such as series and 1 V max. at Ie =5 A
2N6100, and 2N6102 have formed emit- shunt regulators, solenoid drivers, motor· (2N6100,2N6101)
ter and base leads for easy insertion into speed controls, inverters, and driver and 1 V max. at Ie = 8 A
TO·66 sockets. Types 2N6099, 2N6101, output stages of high·fidelity amplifiers. (2N6102,2N6103)
and 2N6103 are electrically identical to • VERSAWATT package (molded·
OPTIONAL LEAD CONFIGURATION
the 2N6098,· 2N6100, and 2N6102, reo silicone plastic)
An additional lead forming for printed-
spectively. • Maximum safe·area·of·operation curves
circuit board mounting is also available.
These new VERSAWATT package transis· • Thermal·cycle rating curve
Please submit requirements to your RCA
tors differ in voltage ratings and in the TERMINAL DESIGNATIONS
Technical Sales Representative, or write
8
currents at which the parameters are con- to RCA Power Marketing, Somerville,
trolled. They are intended for a wide N. J. 08876. C
(FlA~GE)
BOTTOM VIEW
92CS-27519
MAXIMUM RATINGS, Absolute-Maximum Values: 2NS102 2N609B 2N61DO RCA3055 JEDEC T().220AB
2N6103 2N6099 2N6101 2N6099, 2N61 01, 2N6103
·COLLECTOR·TO·BASE VOLTAGE VeBO 45 70 BO 100 v
With external base-Io-emltter resistance (ASE) = lOOn. VeER(SUS) 45 65 75 70 v
• With base open VCEO(sUS) 40 60 70 .60
With base reverse-biased Vee" -1.5 V VCEVlsus) 90
-EMITTER·TO-BASE VOLTAGE VEBO
·COLLECTOR CURRENT IContinuou$) Ie 16 10 10 15
"BASE CURRENT. 'B 4
TRANSISTOR DISSIPATION: PT BOTTOM VIEW
At case temperatures up to 2SoC 75 75 75 75 92C5-21520
At ambient temperatures up to 25°C I.B 1.8 1.8 1.8
JEDEC To-220AA
- At case temperatures above 2SoC. derate linearly 0.6
2N6088. 2N6100, 2N6102
At ambient temperatures above 25°C. derate linearly 0.0144
-TEMPERATURE RANGE:
lOOa
Storage & Operating (Junctlonl -65 to 150
*LEAD TEMPERATURE (Ouring Solderlngl:
At distance ~ 1.8 In. (3.17 mml from cCise of 10 s mal(. 235 •I ''I--
r=: 1=1='1
I-I-.i~ ~~
~ ~'"
t- ~"7
-2N·Series types in accordance with JEOEC registration data format JS·6 RDF·2. l-
z
0
21-- t-! .
"'.~,
i
i5
10 ,
,
I- ~>
II rt~
"'""",
".,."1<
~ 4 "'",
~.q....
~ 2 _ _ ~ l"IJ.".-...},"-,.
11--1~:- '6 f\f\l\~
~
~-
« 1000
, ., 1\
10,000
2 ., ,
100,000
I NUMBER OF THERMAL CYCL.ES
u
H Fig. 2 - Thermal·cycling rating for all types.
~
w
'"u'"
:>
~
8 2;-'
VCEO :MAX*40yi2N6102,2Nt;1~ i
VCEO.MAX .spy k2N6098,21!J6099j - _............
VCEO~~~~!PY t2N6IOb~N~~~_
4 6 8 10 2 4
92CS-17954
Fig. 1 - Maximum safe operating areas for 2N6098·2N6103, inclusive. Fig. 3 - Typical transfer characteristics for
all types.
____________________________________________________________________ 187
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6098-2N6103, RCA3055
ELECTRICAL CHARACTERISTICS, Case Temperature (TcJ =25"C Unless Otherwise Specified

CHARACTERISTIC VOLTAGE CURRENT 2N6102 2N&098 2N61QO
RCA3055 UNITS
SYMBOL V de Ade 2N6103 2N6cJ99 2N6101
VCE VEB IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
40 1.5 - 2 - - - - - -
*
65 1.5 - - - 2 - - - -
ICEX 75 1.5 - - - - - 2 - -
100 1.5 - - - - - - - 5
mA
40 1.5 - 10 - - - - - -
* ICEX 65 1.5 - - - 10 - - - -
(TC = 150°C) 75 1.5 - - - - - 10 - -
100 1.5 - - - - - - - 30
30 0 - 2 - - - - - 0.7
* ICEO 50 0 - - - 2 - - - - mA
60 0 - - - - - 2 - -
5 0 - 1 - - - - - -
* lEBO 7 0 - - - - - - - 5 mA
8 0 - - - 1 - 1 - -
VCER(sus)
0.2 45 - 65 - 75 - 70 -
RBE'= 1000a
* VCEO(SUS)8 0.2 0 40 - 60 - 70 - 60 - V
VCEV(sus)a 1.5 0.1 - - - - - - 90 -
4 4 - - 20 80 - - 20 70
4 5 - - - - 20 80 - -
h FE 8 4 8 15 60 - - - - - -
4 10 - - 5 - 5 - 5 -
4 16 5 - - - - - - -
4 4 - - - 1.7 - - - 1.8
* VBE" 4 5 - - - - - 1.7 - - V
4 8 - 1.7 - - - - - -
4 0.4 - - - - - - - 1.1
VCE(sat)8 10 2 - - - 2.5 - 2.5 - - V
16 3.2 - 2.5 - - - - - -
IS/bb (t;;' 1 s) 60 - - - - - - 1.2 - A
fhfe 4 1 - - - - - - 10 - kHz
* hfe 4 f=1 kHz 0.5 15 - 15 - 15 - 15 120
*
Ihfel 4 f=
0.1 MHz i 0.5 8 28 8 28 8 28 2 -
R6JC - 1.67 - 1.67 - 1.67 - 1.67
°C/W
R6JA - 70 - 70 - 70 - 70
*2N-series types in accordance with JEDEC registration data format (JS-6, RDF-2)
·Pulsed, pulse duration = 300 #s, duty factor = 0.018
188 _____________________________________________________________
______~--------------------------------------------------------------------------POWERTRANSISTORS
2N6098-2N6103, RCA3055
COL.LECTOR-TO-EMITTER VOLTAGE!VcEJ"4V
CASE TEMPERATURE ITe). 25" C
..I
u
.... 0.01 " "OJ
....z
...a: Fig. 5 - Typical gain'ban,iwldth product for
all types.
B10 it==::t::::::jL
a:
o
....
...
u
...J
...J
o
U
0,01
... QI
COLLECTOR CURRENT {!cl-A
I
. .. 10
I 4 6 8 I
10 100 Fig. 6 - Typical dc beta characteristics for
COLLECTOR -TO-EMITTER VOLTAGE (VCE)-V 92CS'21466 2N6098, 2N6099, and RCA3055.
Fig. 4 - Maximum operating areas for RCA3055.
COLLECTOR-lO-EMITTER VOLTAG( !VeE"4 v 140 COLLECT'OR-TO..£MITT£A VOLTAGE \VeE"" V
t 1 l~r-:$~<~t+~~-+-++++H#--4-+~+H~
~ 2 r.T'~4-+++~t'~'~+tt~t--t+++tHfl
~ 1O°f-++++ttH+---++++t++II--+++++tHl if lOOf-++++~t---:l~'I:-t+H-tlI--+--H-t+fffl
i
~
.0 ,~;'1:~;'<1'-"!+tttf!:"".I:-+l-++tttI-++-H1ttll
~~~~~f---+~++~
~ f-~~++ftt'~.\.:!ld~<"'F"":H-l-ll--+--+--H-#I-H
~ .ot-- <". . .
'~"-+-H-t-fNtt-++--t--Htttl
~ t-- i~...,::;;..1'fIfttt-+--H-t+IiIl''',:-t-++I+H~
•o '" I
40 ~'(~;..,;; ~"'~"t'ftttt-+++-I-H'I~++++++-Hl ~ 80 ~
I r°!---+-t--++++ttI-+-+-++tttJj--+-'l-~
g
... 0.1
COLLECTOR CURRENT I!c:)-A
I 0,01
. .. "'
COLlECTOR CURRENT Uel-A1
10
Fig. 7 - Typical de beta characteristics Fig. 8· Typical dc beta characteristics for Fig. 9· Typical saturated switching
for 2N6100 and 2N6101. 2N6102 and 2N6103. characteristics for all types.
COLLECTOR - TO-EMITTER VOl.TAGE (VCEI-v
Fig. 10· Typical output characteristics for Fig. 11 . Typical output characteristics for Fig. 12· Typical {)utput characteristics
2N6098, 2N6099, and RCA3055. 2N61 00 and 2N6101. for 2N61 02 and 2N61 03.
________________________________________________________________ 189
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

Epitaxial-Base, Silicon N-P-N andP-N-P VERSA WATT
Transistors
General-Purpose Medium-Power Types for Switching and Amplifier Applications
RCA 2N61 06-2N6111, 2N6288-2N6293, The 2N6289, 2N6291, and 2N6293 n-p-n Features:
and 2N6473-2N6476, 41500 and 41501 types and 2N6106, 2N6108, and 2N611 0
are epitaxial-base silicon transistors sup- p-n-p devices fit into TO-66 sockets_ The • Low saturation voltages
plied in a VERSAWATT package_ The remaining types are supplied in the JEDEC • VERSAWATT package (molded
silicone plastic)
2N6288-2N6293, 2N6473, 2N6474, and TO-220AB straight-lead version of the
41500 are n-p-n complements of p-n-p VERSAWATT package_ All of these de- • Complementary n-p-n and p-n-p types
types 2N6106-2N6111, 2N6475, 2N6476, vices are also available on special order in • Thermal-cycling ratings
and 41501, respectively_ All these transis- • Maximum safe-area-of-operation
a variety of lead-form configurations_
tors are intended for a wide variety of cu rves specified for dc operation
medium-power switching and amplifier
applications, such as series and shunt
regulators and driver and output stages
of high-fidelity amplifiers_
-...r
i: L
IFLlNGE) • .L
0 I I
92CS-27520
~
I I
I I
--,-
E
BOTTOM VIEW BOTTOM VIEW 92CS-27S19
JEDEC TO-220AA JEDEC T0-220AB

2N6106. 2NS1oa. 2N6110 2N6101, 2N8109. 2N8111.
2NB289. 2N6291. 2N6293 2N6288. 2N8280. 2N62I2,
2N6473, 2N8474, 2N647&,
2N6478,41600, 41501
NUMBER or THERMAL CYCLES
Fig_ 1 - Thermal-cycliny ratings for

all types_
2N6288 2N6290 2N6292

N-P-N 2N6289 2N6291 2N6293 2N6473 2N6474 41500
MAXIMUM RATIN(3S, Absolute-Maximum Values: P-N-P 2N611o+ 2N6108. 2N6106. 2N6475. 2N6476. 41501.
2N6111. 2N6109. 2N6107.
"COLLECTOR-TO-ElASE VOLTAGE VCBO 40 60 80 110 130 35 V
"COLLECTOR-TO-EMITTER VOLTAGE:
With external base-supply resistance (RBB) = 100n.
and base supply voltage (VBB) = 0 V . . . . . . . . VCEX 40 60 80 110 130 35 V
With base open . . . . . . . . . . . . . VCEO 30 50 70 100 120 25 V
*EMITTER-TO-BASE VOLTAGE .. . VEBO 5 5 5 5 5 3 V
'COLLECTOR CURRENT (Continuous)
At case temperature';;;; 106°C .. IC 7 7 7 4 4 7 A
'BASE CURRENT (Continuous)
At case temperature';;;; 130°C . . . IB 3 3 3 2 2 3 A
At case,temperatures up to 25°C 40 40 40 40 40 40 W
* At case temperatures up to 100°C 16 16 16 16 16 16 W
At ambient temperatures up to 25°C . . . . . . 1.8 1.8 1.8 1.8 1.8 1.8 W
A t case temperatures above 25 D C . . . . : . . . . . . Derate linearly at 0.32 W/oC
" At case temperatures above 100D C . . . . . . . Derate lineraly at 0.32 W/DC
At ambient temperatures above 25 DC Derate linearly at 0.0144 W/DC
"TEMPERATURE RANGE:
Storage and Operating (Junction) -65 to 150
'LEAD TEMPERATURE (During Soldering):
At distance ;;;'1/8 in. (3.17 mm) from case for lOs max. 235
• 2N-Series types in accordance with JEDEC registration data format (JS-6, RDF-2) +For p-n-p devices, voltage and c'urrent values are negative
190 _________________________________________________________________
_______________________________________________________________________ POWERTRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

ELECTRICAL CHARACTERISTICS, At Case Temperature (TcJ = 2f11C Unless Otherwise Specified
TEST CONDITIONS. LIMITS

2N6292 2N6290
CHARACTERISTIC VOI-TAGE CURRENT 2N6293 2N6291
UNITS
V de 2N6106· 2N610S 6
A de
2N6107· 2N6109·
VCE VSE IC IS MIN. MAX. MIN. MAX.
ICER 75 - 0.1 - -
(flBE = lOOn) 55 - - - 0.1
mA
(TC = 150°C)
70 - 2 - -
50 - - - 2
75 -1.5 - 0.1 - -
ICEX 56 -1.5 - - - 0.1
mA
(TC'" 150°C)
70 -1.5 - 2 - -
50 -1.5 - - - 2
40 a - - - 1
mA
ICEO
60 a - 1 - -
lEBO -5 a - 1 - 1 mA
VCEO(sus) O.la a 70 - 50 - v
VeER(sus)
(RBE = lOOn)
0.1 80 - 60 - V
4 2a 30 150 - -
hFE 4 2.5 a - - 30 150
4 7a 2.3 - 2.3 -
VBE 2N6292, 2N6293 4 2a - 1.5 - -
2N6290, 2N6291 4 2.5 a - - - 1.5 V
All ~ypes 4 7a - 3 - 3
2a 0.2 - 1 - -
VCE(sat) 2.5 8 0.25 - - - 1 V
7- 3a - 3.5 - 3.5
hfe 4 0.5 20 - 20 -
(f = 50 kHz)
fT
2N6290· 2N62l:13 4 0.5 4 - 4 - MHz
2N6106·2N6109 -4 -0.5 10 - 10 -
Ihfei
(f = 1 MHzl
2N6290·2N6293 4 0.5 4 - 4 -
2N6106·2N6109 -4 -0.5 10 - 10 -
Cobo
(f= 1 MHz, VCB = 10V)
a - 250 - 250 pF
ROJC - 3.125 - 3.125

°C/W
ROJA - 70 - 70
-Pulsed; pulse duration = 300 ps, duty factor = O.OlS. .For p-n-p devices, voltage a~d current values are negative
* In accordance with JEDEC registration data format (JS-6 RDF-2).
CAUTION: The sustaining voltages VCEO(sus) and VCER(sus) MUST NOT be measured on a curve tracer.
_____________________________________________________________________ 191
POWER TRANSISTORS ~_~ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6106-2N6111, 2N6288-2N6293, 2N6473- 2N6476, 41500, 41501

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25"C Unless Otherwise Specified
TEST CONOITIONS. LIMITS

CHARACTERISTIC VOLTAGE CURRENT 2N6474 2N6473 41500
UNITS
V de A de 2N6476· 2N6475· 41501·
VCE V8E IC 18 MIN. MAX. MIN. MAX. MIN. MAX.
30 - - - - - 0.25
ICER
(RBE = 100m
120 - 0.1 - - - -
100 - - - 0.1 - - mA
(TC = 100°C)
120 - 2 - - - -
100 - - - 2 - -
ICEX
120 -1.5 - 0.1 - - - -
100 -1.5 - - - 0.1 - - mA
(TC = 100°C)
120 -1.5 - 2 - - - -
100 -1.5 - - - 2 - -
ICEO
60 0 - 1 - - - -
mA
50 0 - - - 1 - -
lEBO
-5 0 - 1 - 1 - - mA
-3 0 - - - - - 1
VCEO(sus) 0.1" 0 120 - 100 - 25 - V
VCER(sus)
(R BE = 100m
0.1 130 - 110 - 35 - V
4 I" - - - - 25 -
hFE 4 1.5" 15 150 15 150 - -
2.5 4" 2 - 2 - - -
4 I" - - - - - 1.5
VBE 4 1.5· - 2 - 2 - - V
2.5 4" - 3.5 - 3.5 - -
I" 0.1 .- - - - - 1
VCE(sat) 1.5" 0.15 - 1.2 - 1.2 - - V
4" 2 - 2.5 - 2.5 - -
hfe 4 0.5 20 - 20 - 20 -
(f = 50 kHz)
fT
41500, 2N6473, 2N6474 4 0.5 4 - 4 - 4 - MHz
2N6475,2N6476 -4 -0.5 5 - 5 - - -
Ihfel
(f = 1 MHz)
41500, 2N6473, 2N6474 4 0.5 4 - 4 - 4 -
2N6475,2N6476 -4 -{IS 5 - 5 - - -
Cobo
(f= 1 MHz, VCB = 10V) 0 - 250 - 250 - 250 pF
ROJC - 3.125 - 3.125 - 3.125

°C/W
ROJA - 70 - 70 - 70
·Pulsed; pulse duration = 300 p.s, duty factor = 0.018. .For p·n·~ devices, voltage and current values are negative.
*2N·series types in accordance with JEDEC registration data format (JS·6 RDF-2).
CAUTION: The sustaining voltage VCEO(sus) and VCER(sus) MUST NOT be measured on a curve tracer.
192 _____________________________________________________________
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

ELECTRICAL CHARACTERISTICS. Ar c.. Temperature (TcJ >= 25"C Unl88$ Otherwise Spec;fied COLLECTO"-TO~E.rTT£R VCH.TAG£ IVcIEI--4 v
CASE TEMPIERATURE ITc }.2I5-C:
£
...•
TEST CONDITIONst LIMITS
20 .1 .l.li
±.J,ji
I
VOLTAGE CURRENT 2N6288 2N6110·
CHARACTERISTIC SYMBOL' UNITS
Vdo Ado 2N6289 2N6111· "!l . r-
MIN. MAX: MIN. MAX.
IC IB
~ ......
~~
VeE VBE
Collector-Cutoff Current:
12~ V "1t I
resistance IRsel '" 100 n
With (RSEI - 100 nand
leER
36 0.1 -0.1
mA i~ ~
11
"-
TC'" lSOoC 30 -2 •
=
rellene-biased
ICEX 37.5 -1.5 0.1 -0.1 mA 4
-0.01
, ... -C).I
, . .. , . ..
COLLECTOR CURRIENT (I'C)-A
-I -10
revene-biased and
TC=15~oC 30 -1.5 -2 Fig. 2 - Typical gain·bandwidth product for
With base open ICEO 20 -1 mA 2N6106-2N6111, 2N6475, 2N6476,
· Emitter-Cutoff Current
Sustaining Voltage:
lEBO -1 mA
.
%
and 41501.
~g 'I':\.
With base open VCEO(SUS) 0.1 8 30 -30 V
With exter~al base-to 6r-~---i--ri-r---r---r~-rt---l

emitter resistance
~ "r---r---r-t-rt---t---t-iI\~~--1
VeER(sus) 0.1 40 -40 V
IRaE) = lOOn
·
*
DC Forward Curtent
Transfer Ratio
Base-ta-Emitter Voltage:
hFE
3'
7'
30
2.3
150 30
i3
150 ~
~
!,
41r---~--~+-r+---+---+-i-+i'---
COLLECTOR -TO-EMITTER VOLTN>E (VCElo-4 V
CASE TEMPERATURE lTC \:25·C
2N6288, 2N6289 VBE J' 1.5 V ~ 31r---r---r-t-rt---t---t-f-ti---,
. , .II I
All Types 7'
* Collector-ta-Emitter
Vce(sat)
J' 0.3 .,1 -1
V
Saturation Voltage 7' 3.5 -3.5 0.01 a.1
· Common-Emitter, Small-
Signal, Forward·Current
Transfer Ratio:
COLLECTOR CURRENT tIcl-A
Fig. 3· Typical gain-bandwidth product for

f"'50kHz hi. 0,5 20 20 2N6473 and 2N6474.
Gain·Bandwidth Product:
2N6288·2N6289 IT 0,5 MHz
2N6110·2N6111 -, -D.5 10
·
COLLECTOR-TO-EMtTTER VOLTAGE {VCE}: 4V
CASE TEMPERATURE (TC)=25 G C
Magnitude of Common·
~ to
1 ~
[+
Emitt'er, Small·Signal.Forward-
:t-
Current Transfer Ratio: ~ ,
f== 1 MHz
I
2N62BB·2N62B9
2N6110·2N6111
hl·i
4
-4
0,5
-0.5 10
iV
~
6
VI-" I I":.
* Collector·to·Base Capacitance:
f== 1 MHz, VCB==10V Cobo 250 250 pF
~
!
4
+-,-+- I _'"
r-- --
~
. Ut]-_r-
Thermal Resistance: ~ 2
, ., .
Junction·ta-Case R6JC 3.125 3,125 'CIW
Junction-to-Ambient R8JA 70 70
0
0.0 , , .w " ,
COLLECTOR CURRENT (tCI-A
·Pulsed: Pulte duration == 300 PS, duty factor'" 0.018. .For p-n·p deVices, voltage and current values are negative.
*In accordance with JEDEC registration data format (JS·6 RDF·2). Fig. 4 - Typical 9.9in-bandwidth product for
CAUTION: The sustaining voltage VCER (sus) MUST NOT be measured on a curve tracer. 2N6288-2N6293, and 41500.
COUECTOR-TO-EMITTER VOLTAGEI\tEl.-4 V COl.L£CTOR-TO-EMITTEFt VOLTAOEIVcE}. 4V COL.LE'CTOR-TO-EMITTER VOLTAGE lVcE)--4 V

-6
i
;;.-'
L
.~ -,
. -0.15 -I -La -2 I.' ~0.15 -'.5

8AS£-TO-£MITTEJt VOJ.TAGIECY'E) - v BASE-TO-EMITTER VOLTAGEIYSE } - v BASE-TO-EMITTER VOLTAGEIVsEl - v
tecS-I'Ott,
Fig. 5 - Typical transfer characteristics for Fig. 6 - Typical transfer characteristics for Fig. 7· Typical transfer characteristics for
2N6106-2N6111. 2N6473 and 2N6474. 2N6475 and 2N6476.
______________________________________________________________ 193
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500,41501

: ',eTOR-ro- EMITTER VOLTAGE I V 1-4\1
!
2
Ii tk:J-1f,"~1\lT~~t ITe}"2!s'~
I ··
CA ......... 2S.C
-4O·C
.~
i
~
··
is
..
~
~
e·
;
g · . . . . .. . ..
0,01 0./ I
COLLECTOR CURRENT (Ic1-A
10
Fig. 9· Typical de beta characteristics for

2N6473 and 2N6474.
:; COl.L£CTOR- TO-EMITTER
V<M.TAGE (VeE) --4V
9
1c 400 CA, TEMJEJTJR~ 17: I
~
1'00 -pc
ii'! I:80 -40·
....... '\.\.
1'0 ~~
Ii! '0
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V

g
10
-0.01
. .. ..
00
-0.1
COLt.ECTOR CURRENT (I,)-A
II
-I
1'\
10
-10
92CS-18009
92CS-27700
Fig. 8 - Maximum operating areas for 2N6106-2N6111 and 41501.
2N6106-2/V6111•
...
.!..
o
-1
-0.01 -0·1
COLLECTOR CURRENT (1cl-A
.. -I -10
Fig. 12· Typical de beta characteristics for

2N6475 and 2N6476.
~
oJ
0-0,11
-1000, COLLECTOR-TO-ENITTER VOLTAGE (VCEI- -4 V
i :
0-0.1
.~ III I
• CASE TEMPERATURE IT 1-12S-t
......
I ·· 100,
2e·c
;· ~
~
I ··
!O,
COLLECTOR'TO-EMITTER VOLTAGE (VCE)- V

~
g · . ... . ... . ...
I
-QOI -0.1
COLLECTOR CURRENT tIcI-A
-I -10
92CS-22521
Fig. 13· I YPlcal de beta characteristics for

Fig. 11 - Maximum operating areas for 2N6475-2N6476. 41501.
194
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

COLLEcrOR-TO-EIWTTER VOLTAGE (VcE"· 4V
l400
Loo CAJE TE1R~TLl tTCIL~5.C
~ ~
:= 100
:: 80
c -40-C
60
V
I iy 40
K
...u
; 20 ""'" !0~
!i ~ 1\
. ,. . .. . ..
OJ '0
g
II:
II:
:::>
• 2 2
u 0.' .0
II: COLLECTOR CURR£NT IICI-A
g
...J
2N6288-2N6293, and 41500.
8
.0.
: Ie MAl( (CONTINUQUSI---t- CASE TEMPERATURElT~I·IOO·C
10 100
rm;"~~~~~~~==F~~~~~"--+--+~+
-~o97l: "..~..~~
92C$-27702
Fig. 14· Maximum operating areas for 2N6288-2N6293 and 41500.

-I-- "c~o MAX.-12.0 V 12."1&4741
'I--
.. 6 a 10 .. 6 101'00 2 .. 6. I
COLLECTOR-TO -EMITTER VOLTAGE (VCE)- V
Fig. 16· Maximum operating areas for

2N6473-2N6474.
468 .. '18
RIO -10-100
COLLECTOR-TO-EMITTER VOLTAGE (VCEl- V

2N6475 and 2N6476.
COLLECTOR -TO ·EMITTER VOLTAGE (VCE)- V

92CS-22524
Fig. 17· Maximum operating areas for 2N6473 and 2N6474. 10 30

COLLECTOR -TO-EMITTER VOLTAGE (Vc£l- v
'0
, 70
.100

2N6288-2N6293.
________________________________________________________________ 195
POWER TRANSISTORS
2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501

COLLECTOR-lO-EMITTER VOLTAGE (VCE,--4V
COLLECTOR -" TO -EMITTE~ VOLTAGE I VCE'--4V
i
-. .
E
1-
-lOO
~. ,1 t m
to
r ;::-200
~
a-ISO
I
!
r f H
i-IOO
!
0.2 O~ 0.8 o.e 1.2 1.4 I.•
O~ -I -1.5
l# -0.5 -I -1.5 -2
SASE-TO-EMITTER VOLTAGE (VeEI-v
.M£~TO-E"'TT!R YOI.TAGE(Vn' - V' lASE - TO-EMITTER YOl.TAGE I VIE) - v
91(:$-2253$
Fig. 20 - Typical transfer characteristics for Fig. 21 - Typical transfe; characteristics for 2N6106-2N6111, 2N6475, and
2N6288-2N6293, and 41500. 41501. 2N6476.
.. .... COLLECTOR-TO-£MITTER VOLTAGE ("ICE''"'''
: .. ! .. : : 500
:
: : ..
... ·;
E 2
1
:;:i Ii .. §
,I' Ii a I
·'0
.I.
,. ·
!I
til '0
-0.5 -I -1.5 ·2 o
."'E-n)·.'"'T •• VOLTAGE (VBEI-V
eASE-TO-EMITTER VOLTAGE (VIIEI-v 0' 0.'
SASE-lO-EMITTER VOLTAGE IVSE1-V
SICI-Hllt
Fig 23 - Typical input characteristics for Fig. 24 - Typical input characteristics for Fig. 25 - Typical input characteristics for
2N6473 and 2N6474. 41501. 2N6288-2N6293.
.. CASE TEMPERA'JUREITC '-25"C CASE TEMPERAT~E ITC'-2S.C
·,
~-5
SASE CURRENT(Ia,.-ZOOmA
1~ 5
·~
Ci -4
., ....
·1l ., ·,
40 W
40W 150lllA
-50 iliA 100lllA
~
~ 2 mA
~. -2
8 20mA
10ntA
-2 -4 -6 -t -to -12 -14 -16 10 12 14 I.

to 14 16
COLLECTOR-TO-EMITTER VOLTAGE IVCEI-Y
COLLECTOR-tO-EMITTER VOLTAGE (VeEI-V
COllECTOR-TO-EMITTER VOLTAGE; (YcEl"-;y
Fig. 26 - Typical output characteristics for Fig. 27 - Typical output characteristics for Fig. 28· Tvpical output characteristics for
2N6288-2N6293, and 4·1500. 2N6'06-2N6"'. 2N6473 and 2N6474.
~ ~ ~ ~ 4 ~ 4 ~
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V COLLECTOR-TO-EMITTER VOLTAGE IVCE)-V

92CS-239U
Fig. 29 - Typical output characteristics for Fig. 30· Typical output characteristics for
2N6475 and 2N6476. 41501.
196
POWER TRANSISTORS
2N6211-2N6214
Features:
High-Voltage, Medium-Power Silicon • High voltage ratings:
VCEOhu.) - -400 V max.12N6214}
P-N-P Transistors • -350 V max. 12N62131

a -300 V max. (2N6212)
• -225 V max.12N6211}
• Large safe-operating area
For Switching and Amplifier Applications • Complements to 2N3585 transistor family
In Military, Industrial, and Commercial Equipment • Thermal-cycling rating
RCA types 2N6211. 2N6212. 2N6213, and 2N6214- are Applications:

epitaxial silicon p-n-p transistors with high breakdown·yoltage • Power-Switching Circuits
ratings and fast switching speeds. They are supplied in the TERMINAL DESIGNATIONS
• Switching Regulators
popular JEDEC T0-66 package; they differ in breakdown-
• Converters
voltage ratings and leakage-current values.
• Inverters
• Formerly RCA Dev. Nos. TA7719. TA7410, TA8330, and TA8331, • High-Fidelity Amplifiers
respectively_
MAXIMUM RATINGS, Absolute·Maximum VaJues:

2N6211 2N6212 2N6213 2N6214
"COLLECTOR-TO-BASE VOLTAGE V CBO -275 -350 -400 -450 V
With base open ................. . VCEO(sus) -225 -300 -350 -400 V JEDECTO·66
With external ba~e-to·emitter resistance (Reel'" 50 n VCER('u,} -250 -325 -375 -425 V
With base-emitter junction reverse-biased IV BE '" 1.5 VI ..... . VCEX(sus} -275 -350 -400 -450 V
"EMITTER-TO-BAS,E VOLTAGE . _. _....•... V EBO -6 -6 -6 -6 V
"COLLECTOR CURRENT (Continuous) IC -2 -2 -2 -2 A
*BASE CUR RENT (Continuous) ..... . 18 -1 -1 -, -1 A
At case temperatures up to 1000C and VCE up to 50 V 20 20 20 20 W
At case temperatures up to 2SoC and VCE up to 40 V ...... . 35 35 35 35 W
At case temperatures up to 25°C and·V CE above 40 V ...... . See Fig. 1
At case temperatures above 25°(: • _ . _ . . • . . _ . • . . . . • . Derate linearly to 200 0 C
- -
"TEMPERATURE RANGE:
Storage & Operating (Junction) -65 to 200 °c
•
"LEAD TEMPERATURE (During Soldering):
At distance i;' 1/32 in. (O.B mml from case for lOs max.
-In accordaN:8 withJEDEC registration data format US.. B RDF,'I
- 230
- °c
1
t
NUMBER OF THERMAL I;YCLES (THOUSANDS)

.,cs-.n ••
Fig. 2 - Thermal-cvcling rating chart for
all tVpes.
; : COTTOnJITER[OLT (VCE'"-'V -
2
i CASf TEMPERATURf lli 1-15C)'C
j ~: T -2!1-C
.
I, \\
Ie 10
\
l!
-OD! . "OJ
COLLECTOR CURRENT CI.CI-A
-t
-10 -100 Fig_ 3 - Tvpical de beta characteristic

COLL£CTOR-TO-EMITTER VOLTAGE (VCI:)-V for all tVpes.
UC'-IUZO~I
Fig. 1 - Maximum operating areas for all tvpes.
197
POWER TRANSISTORS
2N6211-2N6214
ELECTRICAL CHARACTERISTICS, At Case Tem..raturelTcl = 2SOC Unl. . Otherwise Specified
Vol .... Cur,ent

CHARACTERISTIC SYMeoL UNITS
Vdc Adc 2N6211 2N6212 2N6213 2N6214
VCE VaE IC la Min. Ma•. Min. MI•. Min. MI•. Min. Ma ••

I Qlllecton;utott Oment: ICEO
With base open -150 0 - -5 - -5 - -5 - -5
250 1.5 -- -0.5
-- -- --
--- ---
With base'emitter june·
-315 1.5 -- -0.5
-- -- -
tion reverse-biased -0.5
ICEV
-360
-410 U - - - -1 rnA
With base·emitter junco -250 1.5
-- -5
-- -5- -.
-- --- ---
--
-315 1.5
tion reverse bia.d and
- -- -5-
,-
-360 1.5
TC = lroOC -410 1.5 - - - -10
Emitter·Cutoff Current IEaO 6 0 - . - -0.5 - 0.5 0.5 mA
-2.S -I" 10 100 - -
DC Forward-Current -3.2 -I" .. 10 100 - - -
hFE -
Transfer Ratio -4 -I" - 10 100
-5 -I" - 10 100
Collector·to-Emitter
Sustaining Voltage. VCEOlsus -0.2" o· -225 ·300 -350 - -400
With base open
With external base· to-
emitter resistance VCERlsus -0.2" 250 -325 ·375 - -425
IR aE )' 50!! V
With base·emltter Junc-
tion reverse-biased and
VCEXlsus 15 -0.2" ns 350 400 -450
external base to-emitter
resistance I RBE) 50 !!
0.5mA 6 6 _tl
Emitter-to Base Voltage V EBO V
1 mA 6 -
Emltter·to-Base Satur.
VSE"al)
_,a 0125 14 ·14 -14 -1.4 V
tlon Voltage
Collector to-Emitter
VCElsatl
_,a 0.125 14 1.6 - ·2 -2.5 V
Saturation Voltage
Output CapaCitance ·10
Cobo 220 220 - 220 220 pF
If' 1 MHz) IVCBI
Second-Breakdown
Collector Current ISlb -40 0.875 ·0.875 -0.875 - -0.87~ - A
IBase forward·biasedl
Magnitude of Common
EmItter. Small· SIgnal.
Short-Circuit, Furward Ihfel -10 .. 0.2 4 - 4 - 4 - 4 -
. II = SMHzl
Saturlted Switching Times:
tr Vce"
-1
IB1&IB2
0.6 - 0:6 - 0.6 - 0.6
Rise time 200 V -0.125
VCC = IB1& la2
Storage time ts -1 - 2.5 - 2.5 - 2.5 - 2.5 !,S
200 V 0.125
Vec = IB1&182
Fan lime If
-200 V
-1
-0.125
- 0.6 - 0.6 - 0.6 - 0.6
Thermal Resistance
IJunction·to·casel
RI/JC -10 -1 - 5 - 5 ,- 5 - 5 °CIW
-In accordance with JEDEC registration data format JS·6 RDF·l.

a,ulsed, pulse duration = 300 J.l s; duty 'actor ~ 2%.
198 ____________________________________________ ~ ______---------

POWER TRANSISTORS
2N6211-2N6214
COLL.ECTOR-YO-EMITTER VOLTAGE (VCE'--IO v
i 4.~~~ETn~.~~.=ATTU,.;E~"~CI,.2=~~C,_",_~~~4_H
i
1 '1~~~-+++--~~+4+--+--~~
:~.--t--+-+~--+/~~~~~--4---~~
Ii 20
~ 15
1\
!3 10 ./ \
•
, .. 6. Z ... a ...
...
-0.01 -0.1 -I -10
COLLECTOR CUARENT CIe 1- A
COLLECTOR CURRENT tIel-A
468 4"
-I -10 -100 -1000
COLLECTOR-TO-EMITTER VOLTAGE (VeE)-V
Fig. 4 - Maximum operating areas for Fig. 5· Typical gain·bandwidth product Fig. 6· Typical saturation-voltage
all types. for al/ types. characteristics for all types.
-2
I -I.~ -2 -2.:!I -3
COLLECTOR (:URRENT IICI:-A COLLECTOR CUlltENT IIel-A BASE-lO-EMITTER VOLTAGE 1VeEI-V
Fig. 8· Typical turn-on time and fall·

Fig. 7 - Typical storage-time characteristic Fig. 9 - Typical transfer characteristics
time characteristics for all
for all types. for all types.
types.
_________________________________________________________________ 199
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6246, 2N6247, 2N6248, 2N6469,2N6470, 2N6471, 2N6472

Silicon N-P-N and P-N-P Epitaxial-Base High-Power
Transistors Features:
• High dissipation capability: 125 W at 25°C
General-Purpose Types for Switching and Linear-Amplifier Applications • Low saturation voltages
RCA-2N6246. 2N6247, 2N6248. ar.J 2N64694 are epitaxial· and in the currents at which the parameters are controlled. • Maximum safe-area-of-operation curves
base silicon p-n-p transistors featuring high gain at high cur· All are supplied in the JEDEC TO·3 package. • Hermetically sealed JEDEC TO-3 package
rent. RCA-2N6470, 2N6471, and 2N641~ are epitaxial-base • Hi~ gain at high current
silicon n-p-n transistors. They may be used as complements to .. Formerlv RCA Delf. Nos. TA7281 , TA7230. TA7279, and TA8724, • Thermal-cycling rating curve
the 2N6469, 2N6246, and 2N6247. respectively. All of these respectivelv.
devices have a dissipation capability of 125 watts at case • Formerlv RCA Oe'l. Nos, TA8725, TA8443, and TAB442, re-
temperatures up to 25°C. They differ in voltage ratings spectively. TERMINAL DESIGNATIONS
Maximum Ratings, Absolu(e·Maximum Values:

N-P·N 2N6470 2N6471 2N6472
P·N-P 2N646,. 2N62_ 2N624n 2N624S.
*COLLECTOR·TO·BASE VOLTAGE VCBO 50 70 90 110 V
'" With external base-ta-emitter
resistance (RBEI '" 100 n. 50 70 90 110 V
With base open. 40 60 80 tOO V
JEDEC TO·3
"'EMITTER·TO·BASE VOL TAGE. V
"'CONTINUOUS COLLECTOR CURRENT.
"'CONTINUOUS BASE CURRENT
"'TRANSISTOR DISSIPATION:
15
5
15
5
15 10
5
A
A
,
.
100
1•
At case temperatures up to 25°C . 125 125 125 125 W
'\.
1\ ~J
0
At case temperatures above 25°C.
"'TEMPERATURE RANG~
Storage & Operating (Junction).
-.- -Derate linearly 200 C-+
_______ -65 to +200 - - - - . °c

;
~
:
.- -~
~,
.
'~ ~
~~
~~
"'PIN TEMPERATURE (During Soldering); - <,
~
At distances;;;:' 1/32" (0.8 mm) from <; g I\'\ ~<+
seating plane for 10 s max.
'" In accordance wllh JEOEC regj~lraljon data formal IJS·6 ROF·2~
+235 °c
·2 , - -~"
1\ \ r~
~.1
r-
\----
10
, . ,.~~ , ~~. ..~ , .~
o
• "I
10
0
10 2
NUMBER OF THERMAL-CYCLES !IN THOUSANDS\
,,
0",
10 3
,
Fig. 1 - Thermal-cycling rating chart

for all types.
.I
'0
..
H
z
W
0:
0: I
::>
o COLL.ECTOR CURRENT IIC)-A
..'"
o
o
w
Fig_ 2 - Typical collector-to-emitter
saturation-voltage character-
istics for 2N6246, 2N6247,
-'
o-' 2N6248, and 2N6469_
o
• 10
COLLECTOR-TO-EMITTER
92CS-22379
Fig_ 3 - Maximum operating areas for all types_ •

~1.5
BASE-TO-EMITTER VOLTAGE (VSEl- v

• For p"n-p devices, voltage and current values are negative_ 2N6246, 2N6247, 2N6248, and
2N6469_
200
POWER TRANSISTORS
2N6246, 2N6247, 2N6248, 2N6469,2N6470, 2N6471, 2N6472

ELECTR ICAl CHARACTERISTICS FOR N·P·N TYPES A tcase temperature ITC) ~ 25"C unless otherwise specified 2~ COLLECTOR-TO-EMITTER VOLTAGE !VeE}:
CASE TEMPERATURE IT J = 25-C
f"Ii' %-
UMITS
CONDITIONS i 20f-+-+-H-+-+--+-H+--+--
VOLT· CUR· ~ f--H--H-H-...",l--=---t-H"...;:-t--H-H
CHARACTERISTIC SYMBOL AGE RENT 2N6470 2N6471 2N6472 UNITS .. f-'" .......
Vdo Ado ~ 15 / "-
f r---~r__r~+- -.~
VCE IC IB Min. Max. Min. Max. Min. Max.
~ 101--+-+-+-++--+-+ -l-HI--+-f-\t-H
Collector-Cutoff Current: 35 - 500 - - - - ~
- - - - - I'A
With external base-emitter
resistance (RBE):: 100 n
ICER 55
75 - - -
500
- - 500 ! sl--+-+-+-++--+-+-+-++-+-H-H
With base-emitter 45 - 500 - - - - ~
I
junction reverse-biased 65 - - - 500 - - I'A 468 2 4611
VBE=-1.5V
ICEX
85 ... ~ - - - - 500 -0.1
COLL.ECTOR CURRENT 11.cl-A
-I -10
With reverse bias, 40 - 5 ' - - - - Fig. 5· Typical gain·bandwidth product as a
VBE = -1.5 V. and 60 - - - 5 - - mA function of collector current for
TC= 150°C SO - - - - - 5 2N6246, 2N6241, 2N6248, and 2N6469.
Wi th base open ICED 20 0 - 1 - - - - COLLECTOR-TO-EMITTER VOLTAGE {VCEI-4V
30 0 - - - 1 - - mA 11 CASE TEMPERATlItE 1TC,aZ'- C f--

40 0 - - - - - 1 ~ '°f-+~+-H~~--~~~-+-~-+-H
Emitter-Cutoff Current:
- - - mA
J
I
VBE = -5 V lEBO 0 1 1 1
DC Forward-Current 4 5a 20 150 20 150 20 150 \
Transfer Ratio hPE 4 15a 5 - 5 - 5 - \
Collector-te-Emitter
Sustaining Voltage:
With base open
VCEO!'us) 0,2 0 40b - 60 b - SOb -
V
I
With external base-em itter
re,istance !RBEI = 10012
VCER!'u,) 0,2 SOb - 70b - 90b -
0.01 4 6 PO.I 4 6 6 I
Base-ta-Emitter Voltage
4 5a - 1,3 - 1.3 - 1,3
V COLLECTOR CURRENT (:l:CI-A
VBE 4 15a - 3,5 - 3,5 - 3.5
Fig. 6· Typical gain·bandwidth product as a
92C$-224491'11
Collector-ta-Emitter 5a 0,5 - 1,3 - 1.3 - 1.3

V
function of collector current for
Saturation Voltage
VeEI,at)
15a 5 - 3,5 - 3.5 - 3.5 2N6410, 2N6411, and 2N6412.
Magnitude of Common-Emitter
Small·Signal Short-Circuit
Forward-Current Transfer Ratio: Ihl;1 4 1 5 - 5 - 5 -
1= 1 MHz
Common-Emitter, Small·Signal,
hIe 4 1 25 - 25 - 25 -
Transfer Ratio:
1=1 kHz
Thermal Resistance:
Junction-to-case ROJC - 1.'\ - 1.4 - 1.4 °C/W
* In accordance with JEDEC registration data format (JS·6 RDF-2). b

CAUTION: Sustaining lIoitage. VCEOf,u,) and VCERf,us)
a Pulsed; pulse duration'; 300 ~s. duty factor = 1.8%. MUST NOT be measured on B curve tracer.
.ASE-TO-EMITTER VOLTAGE 1V8El-V
Fig. 1· Minimum reverse·bias second·break·

down characteristics for all types.
(Values for p-n·p types are negative)•
.... '000. COLLECTOft-TO-EMITTER VOI.TA~E tVCE)-4V H-t-- I
f
Q
6
•
~CASE TEMPERATURE tTC1·'2~ac
: , ~
<~ ~"". ~
§
a.
. 100
,
I'
i
f , " !'-
o
o I
~0.01
~ • 6 8
-0,1 -I -10
2 -4 6 •
-100 -0.01 -01 -I -10
COLI-ECTOR CURRENT IICI-A
... -100
g
10
0.1
, . .. ,
COLLECTOR CURRENT 'C:l:CI-A
. . .~ , 10
COLLECTOR CURRENT (I.e I-A 92CS-218.7
Fig. 8· Typical dc beta characteristics for Fig. 9· Typical de beta characteristics Fig. 10· Typical dc beta characteristics for
2N6246, 2N6241, and 2N6469. for2N6248. 2N6410, 2N6411, and 2N6412.
201
POWER TRANSISTORS
2N6246. 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472

ELECTRICAL CHARACTERISTICS FOR '·N.p TYPES, At c_ _pM,tv,.. (Tel = 25"C un'". .th_", rp«:if/od
TEST CONOITIONS LIMITS TEST CONOITIONS LIMITS

SYMBOL VOLTAGE CURRENT VOLTAGE CURRENT UNITS
~N_
2N6z46 aN1247 aNl24S

Vd. Ado Vd. Ad.
VCE VaE IC la Min. Mo •• Min. Mo•• VCE VaE Ie la MIn. Mo•• MIn. MI••
ICER
IRaE) = lOon
-36 -200 -76 -200
~A
-55 -200 -95 -200
-45 1.5 -200 -a5 1.5 -200
~A
'cex -65 1.5 -200 -100 1.5 -200
-45 1.5 -5 -70 1.5
TC = lSOOC -5
mA
-55 1.5 -5 -90 1.5
-20 -1 ~40 0 -1
'CEO mA
-30 -1 -50 0 -1
leBO -5 -5 -1 mA
20 100
-, -,-4 -5'
hFe -.
·4
-5'
-7'
_15'
20 150
20
5
100
-.
-4
-6'
_10'
._15-
20 100
VCEO(sus) ··0.2 _40b -sob -0.2 0 -Bob -loob

v
VCER(susl -0.2 -SOb -70'> -0.2 '-90b -HQb
-4 _15 8 -3.5 -4 6' -1.B V
VBe -1.B
4 7' -2 -4 -5'
-5' -0.5 -1.3 -5' -0.5 1.3
_7' -0.7 -1.3 -6' -0.6 -1.3
Vce(slt) _15' -4 -3.5
v
_15 8 -5 -3.5
IS' -3 2.5 _10' -2 -3.5
Ihf,l -4 -I -4 -I
f"2MHz
hfe f
y -4 -1 25 25 -4 -I 25 25
f -1 kHz
RsJC 1.4 1.4 1.4 1.4 ·crw
• In aceorct.nc. with JEDEC reglStretlOn dab format IJS·6 ROF·21, b CAUTION: CAUTION: SuI,.",,,,, ~ VCEO'''''} .,.,d VCER('U')
MU$T NOT I» mMIUIfId on'. QHW Wt»r.
a Pul",; pili. duration. 300 "s. duty faetar • 1.8%,
1500
I ~U.ECTOR-:ro-EMlTTO VOLTAGE )_4'1
. "J
:tili. IJ.i·I
1 125 H Ij 1m -f! IHj: ill!
I
~~
j'l ;
, til! 1 , !II
I I
I! 750 . ,I tlli.<t I
Hj~~' 1.
~ra .~
!lOO :
250 "
0.25 Q5 o.7S 1.25 III I,'"

I~
lASE -TO--EMITTER VOl..TAGE tv8£l-V HCS-IMl'. BAS!-TO-EMTTER VOI..TAGE IVul-V DeS-2M4?
BASE-TO-EMITTER VOLTAClEIVeE)-V
Fig. 12· Typical mput characteristics for Fig. ;3· Typical input characteristics for
2N6248. 2N6470, 2N6471, and 2N6472.
2N6246, 2N6247, and 2N6449.
TEMPERATURE ITe 1-215"C
e"SE CURRENT lX J __ 800mA
~! . sag ,! 11
~
12~W
-400
1!5.!I :!. . tJ t::, "i!
.: lommmiilitl±HitjrrMm1'''''~··~·NiHIlnl.l.~~m~'+i~i
17.5~[w4f.lmW'~t##l:~mm;~_;~"Wli++J!i
-.00
_10
_.0
-20 8 ~
10
-5 -10 -15 ... 1.5 10 12.5 Its 20

ItI
COLUCrOR-TO-tMlTTER VOLTAGE eVeE I-V COlt.ECTOR-TO-EMlTTER WlTAGE tVeEI':""y
COI.L.ECTOR-TO-EMITTER VOLTAGE IVeel-v
UCS·Zl84tRl
Fig. 14 • Typical output characteristics for Fig. 15 - Typical output characterist/es for Fig. 16· Typical output characteristics for
2N6246, 2N6247, and 2N6469. 2N6248. 2N6470, 2N6471, and 2N6472.
202 ________________________________________________________ y~------------
__________________________________________________________________________________ POWER TRANSISTORS
2N6246, 2N6247. 2N6248, 2N6469, 2N6470, 2N6471, 2N6472
. I
U
!:! t::;"
t-
Z
iii:
"'
It
It
::>
o
It
o
t-
o
"'........
o
o
o
~5 I 1.5 2 2.5
BASE-TO-EMITTER VOLTAGE ("BE)-V

2N6470, 2N6471, and 2N6472.
COLLECTOR-TO-EMITTER VOLTAGE (VeEl-V
92CS-22380
Fig. 17· Maximum operating areas for all types••
COLL.ECTOR CURRENT!IC )-A

COLLECTOR CURRENT(Icl-A
Fig. 19· Typical saturated switching charac· Fig. 20· Typical saturated switching charac-
teristics for 2N6470, 2N6471, and teristics for 2N6246, 2N6247,
2N6472. 2N6248, and 2N6469.
203
2N6249, 2N6250, 2N6251

Features:
450-Y, 30-A, 175-W Silicon N-P-N • High voltage ratings:
Switching Transistors VCBO - 450 V (2N62511'
375 V (2N6250)
For Switching Applications in Industrial and Commercial Equipment 300 V (2N6249)
• High dissipation rating:
!>or = 175W
RCA-2N6269, 2N6250 and 2N6251 are these transistors especially suitable for off-
multiple epitaxial silicon n-p-n power tran- line inverters, switching regulators motor
• Maximum safe-area-of-
sistors utilizing a multiple-emitter-site struc- controls, and deflection circuit applications. operation curves
ture_ Multiple-epitaxial construction maxi-
The high gain and high ES/b energy-handling
mizes the volt-ampere characteristic of the
capability of the 2N6249 make it an excel-
device and provides fast switching speeds.
lent choice for motor-control applications
Multiple-emitter-site design assures uniform TERMINAL DESIGNATIONS
current flow throughout the structure, which in which large winding inductances are en-
countered and high surge currents are re-
produces a high 'Slb and a large safe-oper-
quired to start the motor.
ation area.
The high breakdown voltages, low saturation
These devices use the popular JEDEC TO-31
voltages, and fast·switching capability of the
TO-204MA package; they differ mainly in
2N6250 and 2N6251 make them especially
voltage ratings, leakage-current limits, and
suitable for inverter circuits operating di-
VCE(sat) ratings.
rectly off the rectified 115-V power line or a
The exceptional second-breakdown capabili- bridge configuration operating from the
ties and high voltage-breakdown ratings make rectified 220-V line. JEDEC T03lTO-204MA
MAXIMUM RATINGS. Absolute-Maximum Values: 2N6249 2N6250 2N6251

• v CBO · 300 375 450 V
VCEO(susl 200 275 350 V
• VCEX(susl (VBE=OVI 225 300 375 V
VCERlsusl IR BE I<;50 n 225 300 375 V
• V EBO · 6 6 6 V
• IC' 10 10 10 A
'CM 30 30 30 A
• 'B' 10 10 10 A
~ PT
At T C up to 2S:C and VCE up to 30 V 175 175 175 W
At TC up to 25 C and VCE abova 30 V Derate linearly at 1 °C/W
• TJ+Tstg ' _ _ _ -65 to +200 __ °c
• TL
230 _ _ _ ~
2 •• "
OF THERMAL CYCLES
I 4"~
At distances;;" 1/32 in. (O.B mml from case for 10 s max .. °c

Fig. 1 - Therm.J-cycle rating chart for
• 2N-Series types in accordance with JEDEC registration data format IJS-B, RDF-ll. a/l typBS.
COLLlCTCIII-TO-IfIiIITTU VOLTAII
IVCI'-'V
5
'III"
b1-
II 1015
U· cJTllil'atAT
(TC)-D"C
"~i
•I
....... ~
",
. . ..
~
.
::::::..
IO~!
..-
~
OJ I 10
CO&.LICTOIt CUlItENTllcl-A COLLECTOR CUIIUI'EfliT IJ:C)-,t, COLL[cTOII CUIUtEIIT CI'e I-A
P2CS-I",IQIII
Fig. 2 - Typica' normalized de beta char- Fig. 3 - Typica' bese-to-emitter saturation Fig. 4 - Typica' collector-to-emitter
acteristic. for all typBS. voltage characteristics for all typtlS. saturation voltage charac~
teristics for a/l types.
,204 ___________________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
2N6249, 2N6250, 2N6251

ELECTRICAL CHARACTERISTICS, At Case Temperature (TCJ = 25"C Unless Otherwise Specified
le;:)1
LIMITS
CONDITIONS
U
DC DC N
CHARAC· ~T CUR· I
TERISTIC AGE RENT T
(VI (A) 2N6249 2N6250 2N6251 S
VCE IC 18 MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP MAX.
150 0 - - 5 - - - - - -
ICEO 225 0 - - - - - 5 - - - laS£-TO-£IUTTEIt VOl.,ae, IVII'-V
300 0 - - - - - - - - 5
.:reI-IMn
Fig. 5 - Typical tran.fer characteristics

...
225 - - 5 - - - - - - for all typos.
ICEV 300 - - - - - 5 - - - mA
VSe=-1.5 375 - - - - - - - - 5
450 - - - - - - - - -
... ICEV 225 - - 10 - - - - - -
VSE=-1.5 300 - - - - - 10 - - -
TC=125°C 375 - - - - - - - - 10
450 - - - - - - - - -
... IESO
VSE=-6
- - 1 - - 1 - - 1 mA
... VCEO(sus) 0.2 200b - - . 275b - - 350b - - V
VCER(sus)
RSE=50n
0.2 225 b - - 300 b - - 375b - - V
... VESO
IE=lmA
6 - - 6 - - 6 - - V
3 lOa 10 - 50 - - - - - - al/ typos.
... 3 loa - - - 8 - 50 - - -
hFE 3 loa - - - - - - 6 - 50
4 loa - - - - - - - - -
TRANSISTOR SMOtA.O • Of'£RATEO ..,..... Ttf£
loa 1 - - 2.25 - - - - - - LIMITSOF''''CUItVtSHOWtIINfIG,1
... loa 1.25 - - - - - 2.25 - - - V ,

VSE(sat) loa 1.67 - - - - - - - - 2.25
16a 3.2 - - - - - - - -
/'
V
loa 1 - - 1.5 - - - - - - 0'
... VCE(sat)
loa
loa
1.25
1.67
-
-
- -
- -
-
-
-
-
1.5
-
-
-
-
-
-
1.5
V
0.01
/"
16a 3.2 - - - - - - - - - V V
*
...
Ihfe l
f= 1 MHz
10 1 2.5 S - 2.5 8 - 2.5 8 - 'M,000' 0.01 0.' ,
T.ME Oft PULSE OI,M ...'ION- ....
. ..
,
ISlb 30 5.8 - - 5.8 - - 5.8 - - A
tp = 1snonrep. Fig. 7 - Typical thermal rasponsecharacterisric•.
for al/ typos.
... Es!b VSE--4
RS = 5On. lOC 2.5 - - 2.5 - - 2.5 - - mJ
L= 50JJH
... tr 10 1 - 0.8 2 - - - - - -
VCC= 200 V, 10 1.25 - - - - 0.8 2 - - -
ISl =-IS2 10 1.67 - - - - - - - 0.8 2
... ts 10 1 - 1.8 3.5 - - - - - -
VCC=200V, 10 1.25 - - - - 1.8 3.5 - - - p.s
ISl =-IS2 10 1.67 - - - - - - - 1.8 3.5
... tf 10 1 - 0.5 1 - - - - - -
VCC=200V, 10 1.25 - - - - 0.5 1 - - -
ISl =-IS2 10 1.67 - - - - - - - 0.5 1
ROJC 10 5 - - 1 -- 1 1 °CM- -
• 2N-8eroes types In accordance with JEDEC registration data format (JS-6 RDF·,I.
I Pulsed; pulse duration ';;;300 IlS, duty factor = 2%. Fig. 8 - Typical rise·time characteristic. for
b CAUTION: The sustaining voltages VCEO(susland VCERlsusl MUST NOT be measured on a curve tracer. al/ typos.
___________________________________________________________________ 205
POWER.TRANSISTORS ______________________~____~--------------------------------------------_
2N6249, 2N6250, 2N6251

CASE TEMPERATURE (TC).~·C
, , .
PULSE OPERATION *,
--i. it 1-- !1/+ 1\. - 20ps-
2 :1 'I.JlTJ1--L-~
'ICMAlC.ICONTINUOUSI I
rt-
1\
.. 10
=::-:-i·~:~:t:::f.l1·
uI • - - ±r.l:· -iE'
;: • _+_
.- '.
.--,- ·t
DI!SIPATI611!:.LIMWL-~ i
~ 4 --.II--1=11-if:P:.'I--~
+. ,,-J -t~'---'.. _L~
,! " _i'
\:~I,++\--+-IH-il--I+-+-H++I COLLeCTOR CURRENT CIe I-a
~ --:-I"'\\1,"'l:d--H-++\-+\+---t-W-H-l-+H~
0: , .
.-----+--- ,I I
U "I . I ! ! I;i . i · ' I~ \' ~I\

Fig. 11 - Typical storage-time chBftlCttlrI.tic.
~ 2_-- --j-~-j-+-MI.., -- .. -i---.. ,'-\:.I\:T-Mt+----\::;--...-,-tt-t++H-t-tl for all type. (with con.tant forced
t; .. :.FOR SINGLE' . 'III :. -., .......- <"i, gain).
; , ~3~;:PETITIVE I I: L' : ; I ~
:---'-1-=1. ·~:·~-~~·!*~<>~til~Ellls*u~
:.:~:F8~lff~~-
8 I ='r::::::t=:.:r::Lcffl
,
- ------!----;:-+--+-+++\-N---+r-t-'ffi--I-t--t-+-I+H
!
_1.. .,-++++
Ii! i i ! '.~. '
4 - ---- '--i·· VCEO MAX.-200 V 12N6249 I'~-~·~n!~~r~{RtHR
2 ~ :-l-=r~ VCEO MAX.'275 V 12N62501~
, I VCEOMA)(." 350 V {2N62~1 ,=!;:j:t+:j:(:=~~U1;t11 'I
0.1 : i i lilli,
6810
I rlli 68100 6 8000
COLLECTOR-TO-EMITTER VOLTAGE IVCE)- V
92CS-19468
Fig. ~ - Maximum operating afBB. for all types at TC = 25°C. COLLECTOR CURRENT tIel-A
Fig. 12 - Typical.torage-time chBftlCteristics

for all types (with constant ba.e
drive).
10 ;. .. ~
COLLECTOR CURRENT lIe I-A \121;$.1 ....'"1
Fig. 13 - Typical falHime characteristic for

all types.
II I '
-r-+~+-+--t-++H vCEO MAX.'200 V 12N6249 )I::~=l:r-:;:f--tlt-t+!++++ti
vCEO MAX.- 275 V 12N6250) ~=+::t~~tttt:tm
,
- _.,- .1. _. VCEOMAX.- 350 V 12N62511~::j:=I::j:~tttlttt1
0.01 i -tr=r]JlllDlr
1 8 10 2 6 8 100
• "0000
COLLECTOR-TO· EMITTER VOLTAGE IVCE1-V 92CS-I9419
Fig. 14 - Typical inductive· and resistivB-ioad
Fig. 10 - Maximum operating artJIIl for all types at TC - 100°C. fal/·tim9 characteristics for all tVPe&.
~6 ________________________________________________ ~-----------
POWER TRANSISTORS
2N6282,2N6283, 2N6284,2N6285,2N6286, 2N6287

20-Ampere Complementary N-P-N and P-N-P Monolithic
Darlington Power Transistors
60-80-100 Volts, 160 Watts Features:
Gain of 2400 (Typ.) at 10 A (2N6282, 2N6283, 2N6284) • Operates from IC without predriver
Gain of 3500 (Typ.) at 10 A (2N6285, 2N6286, 2N6287)
• High reverse second-breakdown capability
• Monolithic construction
The RCA-2N6282. 2N6283, and 2N6284 and
VCEO(sus) = 60 V Min. - 2N6282, 2N6285-
the 2N6285, 2N6286, and 2N6287 are
= 80 V Min. - 2N6283, 2N6286-
complementary n·p·n and p-n·p monolithic
silicon Darlington transistors designed for = 100 V Min. - 2N6284, 2N6287-
general-purpose amplifier and low·speed
switching applications. The high gain of Applications:
these devices makes it possible for them to • Power switching
be driven directly from integrated circuits. • Hammer drivers
These devices are supplied in the JEDEC • Series and shunt regulators
TO-3 hermetic steel package. • Audio amplifiers

2N62B2 2N62B3 2N6284
2N62BS· 2N62B6· 2N6287·
o vCBO' . 60 80 100 V
• VCEolsus) 60 80 100 v TERMINAL DESIGNATIONS
o V EBO . 5 5 5 V
o 'c. 20 20 20 A c
'0
o 'CM 40 40 40 A
* 'B' 0.5 0.5 0.5 A
• PT
TC ";;2SoC 160 160 160 w
TC>25°C Derate linearly 0.915 W/oc
* Tstg, TJ . . _ _ _ -65 to 200 °c
* TL
At distances ;;'1/16 in. 11.58 mm) from case for lOs max. 235 °c JEDEC TO-3

• For p~n~p devices, voltage and current values are negative .
..... ----------.
I· I
I I
I I
: I
I I
IL _...
_on _ _ _ _ ...JI
_ _ _"80/1
82CS-UlI' 92CS-29131
92CS-29128
Fig. 1 - Schematic diagram for 2N6282, 2N6283, Fig. 2 - Schemetic diagram for 2N6285, 2N6286, Fig. 3 - Power derating curve for all type•.
and2N6284. end2N6287.
__________________________________________________________________ 207
POWER TRANSISTORS
2N6282,2N6283,2N6284, 2N6285,2N6286, 2N6287

ELECTRICAL CHARACTERISTICS, at Case Temperature (TC' = 21'C Unless Otherwise Specified

VOLTAGE CURREN1, 2N6282 2N6283 2N6284
CHARACTERISTIC Vdc Adc 2N6285· 2N6286· 2N6287· UNITS
VCE VSE IC IS MIN. MAX. MIN. MAX. MIN. MAX.
.. 30 0 - 1 - - - -
'CEO 40 0 - - - 1 - -
50 0 - - - - -'- 1 rnA
.. 60 -1.5 - 0.5 - - - -
'CEX 80 -1.5 - - - 0.5 - -
100 -1.5 - - - - - 0.5
60 -1.5 - 5 - - - -
Tc= 150°C 80 -1.5 - - - 5 - -
100 -1.5 - - - - - 5
. 'EBO -5 0 - 2 - 2 - 2 rnA
. VCEO{sus) 0.18 0 60 - 80 - 100 - V
.. hFE
3
3
200
100
100 - 100' 100
750 18,000 750 18,000 750
- -
18,000
.. VCE{sat)
20a
loa
0.2
0.04
-
-
3
2
-
-
3
2
-
-
3
2
V
.. VBE 3 100 - 2.8 - 2.8 - 2.8 V

.. VBE{sat) 200 0.2 - 4 - 4 - 4 V
.. hfe
3 10 300 - 300 - 300 -
f = 1 kHz
. Ihfe l 3 10 4 - 4 - 4 -
f = 1 MHz
.. Cob
VCB= 10V,IEO,
f= 0.1 MHz
2N6282-84 - 400 - 400 - 400
pF
2N6285-87 - 600 - 600 - 600
'Sib
t = 1 s, nonrep.
30 5.3 - 5.3 - 5.3 - A
ROJC 1.09 - 1.09 - 1.09 °CIW
• Pulsed: Pulse duration = 300 jlS, duty factor = 1.8%.

* In accordance with JEDEC registration, data.
!IO'!I CQLLECTOR-TO-EMITTER VOLTAGE IVCEI,;SY -, • COl;.LECTOR-TQ-E:MITTER VOLTAGE (VCEI.-a~ =r- •

i ·
4 2NU12. 2. . .13 2N82.4
J
! .
~ . I
I
;;
•
$1, ,~
I
'"
!
J~I
2 eNUI!. 2N.N,INeZI'-
r=.
f= =i' • I
. I - .,£- .~~~
IIi;·
-.
~
,/ )e f/" ..L~,,,V ~
~ .,"",
,\. i 2 .-"'.
r':
~ .\
i :• 1
cou.!CTOR-TO-QtlTTER VOLTAGE' VeEI- 5"':~
V10: COLLECTOR CURRENT f:tc:)- 10 ...•
CASE TEMPERAflltE CTc)· u-c
I· : lill 1 lill 1
II •
wi-
0., ... . .I "
10 • .•• 100
g~ I
'0'
-0.\ I . II
-I
, . II
-10
, . I I
-100 •
'0
I
I I III
I ... • ."
10
III I
100
fRlOUENY (fI:....HI
I • • I
1000
COLLECTOR CUMENT(tcl-A COLLECTOR CURRENTCle)-A f'OR ,~ •• , OEV!CIS. VOLTAGI AND CURRENT VALUEa ARE NIIATIVE
HC.~_'4
"CI~t.llI 92cs-zeln
Fig. 4 - Typ ica' dc beta charactaristic. for Fig. 5 - Typica' de beta:characteri.tic. for Fig. 6 - Typical .mall·,ifJf/8' current gain for all types.
2N6282, 2N6283, and 2N6284. 2N6285, 2N6286, and 2N6287.
208 ________________________________________________ ~-------------

POWER TRANSISTORS
2N6282,2N6283, 2N6284, 2N6285,2N6286, 2N6287
I
COLLECTOR- TO-EMITTER SATURATION VOLTA.GE
[VCEhot)]-V
FOR p-~-p DEVICES,VOLTAGE AND CURRENT VALUES ARE NEGATIVE
!l2CS-2913!oi
Fig. 8 - Typicafsaturation characteristics forall types,
COLLECTOR-TO-EMITTER VOLTAGE '''cE)-V

92CM-29130
• FOR p-n-p DEVICES, VOLTAGE AND CURRENT VALUES ARE NEGATIVE
-I
·, =ffF'-r-[.
LECTOR SUPPLY VOLTAGE Vcc" -3011
CASE TEMPERATURE !TC l : 20 ' C
'V 8 COlLECTOR SUPPLY VOLTAGE (Vcc.-30V
lJ
CASE TfMPERATURE tTe l - 2!!1-C -+---+--++1
·, I
Ie/I,-"O 6 Ie/Ia -2S0
rBI=IB2,_~
t-:¥':r'-t-",*:±±.i==:r-i iii
r:::R~" .__~
" 181 -.II!
i'-, v:-tT_1-
< , f, ~ '~4-~~Tt-r--r~-P~-t-~
~ I'
I
X
~ ~- .
-I
I,~~~~~r-~~V~~~
~
'r----
, ~ --, H-r---- :r---- r---''''k;:t-H--r----t--rH--r----t---t-H
'i'
:e r----
· ~"" .- -
--..... "1
-I
H-. rt:j_.- ,.I . I
~
,~ !d AT v"<o,,,-ov
-0.1
, ,
" -I
COLLECTOR
" -10
CURRENT (Ie )-A
" -100 QI
'" 6 8 I 2 .. 8 10
COLLECTOR CURRENT lIe I-A
2 4 6 8 100
Fig_ 10 - Typical switching times for 2N6285, Fig. 9 - Typical switching times for 2N6282,
2N6286, and 2N6287. 2N6283, and 2N6284_
_______________________________________________________________ 209
POWERTRANSISTORS ____________________________________________ ~ _________________________________
2N6300, 2N6301
a-Ampere Silicon N-P-N Monolithic Darlington Features:
• Operation from Ie without predriver.
Power Transistors • Low leakage at high temperature
• High reverse-second-breakdown capability
60- and BO-Volt, 75-Watt Types With Gain of 750 at 4 Amperes
Applications:
The RCA-2N6300 and 2N6301 are mono- • Power switching
lithic n-p-n silicon Darlington transistors. de- • Audio amplifiers
signed for low- and medium-frequency power • Hammer drivers
B
applications. The double epitaxial construc- • Series and shunt regulators
tion of these devices provides good forward
and reverse second-breakdown capability.
Their high gain makes it possible for them to TERMINAL DESIGNATIONS
be driven directly from integrated circuits.
TO-213MAlTO-66 hermetic packages.
Fig. 1 - Schematic diagram of 2N6300 and 2N6301
DarHngton power transistors.
MAXIMUM RATINGS,Absolute-Maximum Values:
2N6300 2N6301 JEDEC TD-213MA.
o V CBO ' 60 80 v
o V CEO ' 60 80 v
o V EBO '
o IC'
5
8 8
5 V
A
;e
ICM 16 16 A i;~
120 120 mA l!1~ 100
• lB'
• PT
T C ';;25°C 75 75 w
n~
~51
70
TC>25°C See Fig_s. 2 and 3 i~!c 00
• Tstg• TJ . -65 to +200 liil~

• TL ¥~~ .0
~
At distances ;;'1/1"6 in. (1.58 mm) from set
25 50 15 100 125 150 11! lIDO
seating plane for 10 5 max .. 235 CASt: TEMPERATURE tTcl--C
.1CS-1III45
o In accordance with JEDEC registration format JS-6 RDF-2.
Fig. 3 - Derating curve for both types.
OJ
I: .... I:
COLU:~OR CURRENT (tel -!

... , J ... 100
Fig. 4 - Typical de beta eharacterillie. for both typa
. 100
•I ,
t
~
·i
. 1\
1\
r---
~
CASE-TEMPERATURE
CHANGE (6TC ).50·C
::
.
a
w -I-- ~
"
'" [\
~ 1\ ~
I-- i
"
. , ..25~"'rc
. .N:i... , "'I'. .
;J 150
-c C
1
10 10
, 10
II
10
COLLECTOR-TO-EMITTER VOLTAGEIVCEI- V 92CM-30526 NUMBER OF THERMAL CYCLES .ecl-15TOt
Fig. 2 - Maximum operatingaress for types 2N6300and 2N6301. Fig. 5 - Thermal.cyclingratingchartforbothtypBS.
. 210 ________ ~ ___--____________________________--------__------------

2N6300, 2N6301
ELECTRICAL CHARACTERISTICS,At Case Temperature fTC/= 2fiOc Unless Otherwise Specified COlLECTOR CURRENT 'Ie'.' A
COLLECTOR-TO-EMITIER VOLTAGE (VcEl.5V
CASE TEMPERATURE ITC"25"C

DC DC
CHARACTERISTIC VOLTAGE CURRENT 2N6300 ·2N6301 UNITS
SYMaOL V A
VCE VEa VaE Ie IE la MIN. MAX. MIN. MAX.
ICEO
30 0 - 0.5 - -
40 0 - - - 0.5
60 -1.5 - 0.5 - -
*
*
ICEX
ICEX
80
60
-1.5
-1.5
-
-
-
5
-
-
0.5
-
rnA
10
00'
... 0.1 10
TC = 1500C 80 -1.5 - - - 5
FRE;ouENCV (fl-MHZ
IESO 5 0 - 2 - 2 mA Fig. 6 - Typical sm./~signal gain for both types.

3 sa 100 - 100 -
* hFE 3 4a 750 18,000 750 18.000
* VCEO(sUS) O.la 60s - 80a - V
• COLLECTOR SUPPlY VOLTAGE (IICC'-20V
IS,··182"Ie/500
* VCE(sat)
4a
sa
0.D16 -- 2 -
-
2
V ,.......+- 1'"'-
* VSE 3 4a
0.08
-
3
2.8 -
3
2.8
• ./' "
V
• VSE(sat) 8a 0.08 - 4 - 4 3
V
~
- .. ."±...
*Ihfel ~
.......... I~
3 3 4 - 4 - ,/
f = 1 MHz
k'
Cobo
f = 0.1 MHz, 0 - 200 - 200 pF "
VCS = 10V
, , 3 4 7
'"
hfe COLLECTOR CURRENT (lei-A
·f = 1 kHz 3 3 300 - 300 -

Fig. 7 - Typical saturated switching-time
'Slb characteristics for both types.
t = 1 s, 30 2.5 - 2.5 _. A
non rep.
ROJC - 2.33 - 2.33 OCIW COLLECTOR· TO-EMITTER VOLTAGE IV CE 1-' V
• In accordance with JEDEC registration data format JS·6 RDF·2. " ~

a Pulsed: Pulse duration = 300 liS, duty factor = 2%. 1
I
~ 10
I
,
BASE-TO-EMITTER VOLTAGE I VBE)-V

both types.
"FE "',COO
Tc.lOO-C
IOO,IOO-C
• 10
COLI..ECTOR·TO·EMITTER YOlDGENCEI-V
4 I • I)
COL.LECTOR CURRENT IICI-A
12
• •
Fig. 9 - Typical output characteristics for Fig. 10 - Typical saturation-voltage characteristics Fig. 11 - Typical transf.r characteristics for
both types. for both types. both types.
_________________________________________________________________ 211
POWERTRANSISTORS~ ______________________________________________ ~ ________________________ ~ __
2N6306-2N6308, RCS579
High-Voltage, High-Current Silicon N-P-N Features:
• Fast Switching Speed
Power-Switching Transistors • High Voltage Ratings:
VCER =350 Vt0450V
For Off-Line Power Supplies and Other High-Voltage Switching Applications • High Gain at IC =3 A
• Thermal-Cycling Rating"Chart
The RCA-2N6306, 2N6307, 2N6308, and gether with the high gain, low saturation
RCS579 are epitaxial silicon n-p-n power voltage and fast-switching capability of Applications:
transistors with pi-nu construction. They this series of devices, make them parti-
• Off-Line Power Supplies
are hermetically sealed in a steel JEDEC cularly suitable for inverter circuits
• High-Voltage Inverters
TO-3 package, and differ mainly in volt- operating directly off the rectified 120-
• Switching Regulators
age ratings, saturation voltage, and beta volt power line or in a bridge configura-
• Motor Controls
characteristics. The exceptional second- tion operating from the rectified 240-volt
breakdown and high voltage ratings, to- line. TERMINAL DESIGNATIONS
MAXIMUM RATINGS,Absolute-Maximum Values: RCS579 2N6306 2N6307 2N6308

• VCBO ... , . . . • . . . . . • . . • . . . . . . . . . . . . . 500 500 600 700 V
VCER(susl
RBE = 500 . . . . . . . . . . . . . . . . . . . . . . • . . 400 360 400 450 V
• VCEO(susl. . . . . . . . . . . . . . . . . . . . . . • . • • . . 250 250 300 360 V
• VEBO . . . . • . . . . . . . . . . . . . • . . • . . . . . . • . 6 8 8 8 V
JEDEC TO-3
• IC····························· ... . 8 8 8 8 A
• ICM······.· .. ·· .... · .............. . 16 16 16 16 A
• lB·················· ......•..•..... 4 4 4 4 A
• PT
Tcupto25°C .. .' . . • . . . . . . . . . . . . . . . . . 125 125 125 125 W
T C above 25°C • . . . . . . . . . . . . . . . . . . . • . . Derate linearly to 200·C - -
• Tstg• TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200 °c
100
• TL
At distance;;' 1/16 in. (1.58 mml from
seating plane for 10 s max • . . . . . . . . . . . . . . . . - - - - - - 235------
'2N-Series types in accordance with JEDEC registration data format US-6 RDF-ll
. . . a.. I: . . . 81011 2 .. 8 'loG I: ..

all types.
I"", COLL~TOR-~EMITTER VOLTAGE (VCE)"& V :--
I. :,~EMPERA~UREIIT~)!'5'C ~
150"< I :to-
!zi
... ~ -5S-
t'""----
"- ~
Igl.O,
iL
; .,
8
,2eS-US3.
0.1
, • ••
COLLECTOR CURRENT (ICJ-A
I '
.. • 10
Fig. 7 - Maximum operating areas for 2N6306-2N6308. Fig. 3 - Typical de beta characteristics for
all types.
212 _____________________________________________________________
POWER TRANSISTORS
2N6306-2N6308, RCS579
ELECTRICAL CHARACTERISTICS. TC' 25°C Unless Otherwise Specified.

CHARACTERISITC VOLTAGE CURRENT 2N6306 2N6307 2N6308 RCS579 UNITS
Vdc Adc
VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
250 0 - 0.5 - - - - - 0.5
ICEO 300 0 - - - 0.5 - - - -
350 0 - - - - - 0.5 - -
500 -1.5 - 0.5 - - - - - 0.5
o ICEV 600 -1.5 - - - 0.5 - - - - mA
700 -1.5 .~ - - - - - 0.5 - -
450 -1.5 - 2.5 - - - - - 2.5
0
TC = 150"C 550 -1.5 - - - :/.5 - - - -
650 -1.5 - - - - - 2.5 - -
o lEBO -6 0 - - - - - - - 2 mA
-S 0 - 1 - 1 - 1 - -
o VCEO('US) O.la 0 250 - 300 - 350 - 250 - V
VCER(sus)
RBR = 50n O.lb 350 - 400 - 450 - 400 - V
VEBO
IE= 1 mA 0 - - - - - - 6 - V
o hFE 5 30 15 75 15 75 12 60 12 -
5 So 4 - 4 - 3 - 3 -
o~BE 5 3a - 1.3 - 1.3 - 1.5 - 1.5 V
o VBE(sad sa 2 - 2.3 - 2.3 - - - - V
So 2.67 - - - - - 2.5 - 2.5
3a 0.6 - O.S - 1 - 1.5 - 1.5
o VCE(sad Sa 2 - 5 - 5 - - - - V
So 2.67 - - - - - 5 - 5
o Ihlel 10 0.3 5 - 5 - 5 - 5 -
Of = 1 MHz
o ES/b -1.5 3 ISO - 180 - ISO - 180 - mJ

L = 40 mH
RBB = 3kn
IS/b
tp = 1 s, n~nrep. 40 3.15 - 3.15 - 3.15 - 3.15' - A
• Cabo
VCB=10V, - 250 - 250 - 250 - 250 pF
f =0.1 MHz
0
r
VCC=125V 3 0.6 - 0.6 - 0.6 - 0.6 - 0.6
• ts
VCC= 125V
tp = 25/1S 3 +0.6 - 1.6 - 1.6 - 1.6 - 2
-1.5 /IS
tp= 5/1S +0.6 - O.S - O.S - O.S - -
3 -1.5
• tf
+0.6 - 0.4 - 0.4 - 0.4 - 0.4
VCC=125V 3 -1.5
ReJC - 1.4 - 1.4 - 1.4 - 1.4 °C/W
.0 2N-Series type, in accordance with JEDEC registration data lomat (JS-6, RDF·ll.
a Pulsad; pulse duration ~ 300 /IS, duty facto""; 2%.
b CAUTION: The sustaining voltage VCEO(SUS) and VCER('U.) MUST NOT be measured on 8 curve tracer. VCEO('US) should
be measured by the pulse method (Note "a"l.
213
POWE~ TRANSISTORS
2N6306-2N6308,RCS579
I
COLLECTOR CURRENT (Ic1-A
Fig. 5· Typical collector-to-emitter

saturation-voltage character-
istics for all types.
92CS-26!522
Fig. 4· Maximum operating areas for RCS579.
10
0.1 2 4 6 8 , 2 4 6 8 10 2468'00 2 4 6 81000
COLLECTOR-TO-BASE VOLTAGE IVce)-V
Fig. 6 - Typical output capacitance for

all types.
COLLECTOR SUPPLY VOLTAGE (IICC).12~ V

CASE TEMPERATURE ITc)-25OC
10 PULSE DURATION·25~.
8 DUTY CYCLE-I""
6 tSI-Ic/5, -182·te/2
"l.
I 4
i... 2
~
............ t-!.
~
~
~
I
.
4
I, .....
~ t:J
0.1
2
I=::
I 2 3
If
I.
COLLECTOR CURRENT (Ic}-A

4 5
- BASE-TO-EMITTER VOLTAGE (VBE)-V
Fig. 7· Typical output characteristics for Fig. 8· Typical saturated·switching-time Fig. 9 - Typical transfer characteristics
all types. characteristics for all types. for all types.
214 _____________________________________________________________
POWER TRANSISTORS
2N6326, 2N6327
High-Current, High-Power ,High-Speed N-P-N Features:
• Specification for hFE and VCE(sat) up to 30 A
Power Transistors • Current gain bandwidth product
fT =3 MHz (min.) at 1 A
The RCA-2N6326 and 2N6327 are epitaxial- regulators, dc-to-dc converters, inverters, and • Low saturation voltage with high beta
base silicon n-p-n transistors intended for a solenoid (hammer)/relay drivers_ • High dissipation capability
wide variety of high-power, high-current These devices differ in maximum voltage • 200 mJ ES/b characteristic
applications, such as power-switching circuits, ratings_ They are supplied in JEDEC TO-
driver and output stages for series and shunt 204MA hermetic steel packages_

2N6326 2N6327
"VCBO - 60 80 V
• v CEO(sus' . 60 80 V
V
E0FLA~GEI
"VEBO
",C .
"'CM
30
40
A
A o 0
"'B . 10 A
B
'BM 16 A
* PT
At TC .;;; 2S D C 200 W JEDEC TO-204MA
At TC > 2S DC Derate linearly 1.15 WIDC
See Figs. 1 and 2
- - - -65 to 200 - - - - DC
At distance;;;' 1/32 in. 10.8 mm) from

seating plane for 10 s max. 230 DC
*'n accordance with JEOEC registration data format JS-6 ROF-2.
CASE TEMPERATURE (TC)--C
Fig. 2 - Derating cur""s for 2N6326 and 2N6327_
: COLLECTOR-lO-EMITTER VOLTAGE IVCE'·4 Y-r--

]!
-
4 - CASE),:
;;
~
, ~.,J,.JI
15'00
---r-.: '". . ,~
i :~ _. ~S5·c-
C"
~ r"4
.- -~ 1'''O'c_~
,_ .. ..
~ ----
~
a 10.
0(--- - - 'r-- --R-
I,
Ii!
4
l;l , , , ,
0·,
4 O. 4 O. 4 ••
I 10 100
COL.lECTOR CURRENT (Zoe I-A
COLLECTOR- TO- EMITTER VOLTAGE I VCEI-V 92CS-29M3
92CS~29845
Fig_ 3 - Typical dc beta characteristics as a func-
tion of collector current for 2N6326 and
Fig. 1 - Maximum operating areas for 2N6326 and 2N6327_ 2N6327.
_________________________________________________________________ 215
POWER TRANSISTORS
2N6326,2N6327
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2!PC 18 COLLECTOR SUPPLY VOLTAGE (\fccI-:5QV
Ie/la-IO
Unless Otherwise Specified & CASE TEMPERATURE (Tel- 2e·C
TEST CONDITIONS LIMITS i

"l:
2.~::t====r=t-+~---+--~--+-~
TERISTIC Vdc Adc
2N6326 2N6327 UNITS i
F
II!
VCE VeE IC Ie Min. Max. Min. Max.
l!li O.lt:=t==I==4=t=l===t==!=tt=j
,~
ICES
60
80
..
-
-
0.5
-
-
-
-
0.5
i :;~~~-t----r'd-t-t-r---t-__
---r-t~
;:
ICES 30 - 5 - - Ii
~ 2.r---+----r-+-+-r---+--~--+-~
TC = 150°C 40 - - - 5
mA
30 - 1 - - 0.0,
6 8 10 , '100
'CEO 40 - - - 1 COLLECTOR CURRENT (Icl-A
lEBO -5 - 0.5 - 0.5

Fig. 4 - Typical delay·time and rise-time
4 5a 25 - 25 - characteristics as 8 function of
hFE 4 15a 12 - 12 - collector current for 2N6326
4 30 a snd2N6327.
6 30 6 30
VCEO(sus) 0.03 60 - 80 -
4 15 a - 2 - 2
VBE
4 30 a - 4 - 4
V
15 a 2 - 1.5 - 1.5
VCE(sat)
30a 7.5 - 3 - 3
'Sib
tp = 1 s 20 10 - 10 - A :&. 6 lelIa-10 ---+~-+--I
nonrep. 1 CASE TEMPERATURE (TC)-21)·C
~ 4
ES/b
L= 125 1lH, -1.5 10 - ~ ·2r---t---+-t-++---+---t--HH
I,r--~
6.25 - 6.25
RBE = 51 n
mJ
L = 20 mH,
RBE = 100 n
0 4.47 200 - 200 -
Ihfel
f = 1 MHz
10 1 3 - 3 -
hfe 0.1
f = 1 kHz
10 1 30 - 30 - , , 10 , '100
COLLECTOR CURRENT (Ic)-A
ton VCC= 15 2 0.45 (Typ.) 0.45 (Typ.)

30 15 2b 0.9 (Typ.) 0.9 (Typ.) !IS
toff Fig_ 5 - Tvpical storage-time and fall-time
ROJC 20 5 - 0.875 - 0.875 °CIW characteristics as B function of
collector current for 2N6326
*In accordance with JEDEC registration data format JS·S RDF-2. and2N6327.
apulsed; pulse duration = 300 !-IS, duty factor = 1.8%.
biB =-IB .
1 2
COLLECTOR-lO-EMITTER SATURATION VOLTAGE [VCE(latl1-v
Fig. 6 - Typical transfer characteristics for Fig. 7 - Typical saturation voltage characteristics for
2N6326 and 2N6327. for 2N6326 and 2N6327.
216 ________________________________________________________________
______________________________________________________________________________ POWERTRANSISTOR5
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001

8- and 10-Ampere N-P-N Darlington Power Transistors
For Use as Output Devices in Switching and Amplifier Applications Features:
40-60-80 Volts, 90-100 Watts
• Operation from Ie without predriver
• low leakage at high temperature
The RCA devices are monolithic n-p-n ----------,
I • High reverse-second-breakdown cap-
silicon Darlington transistors designed
I ability
for low- and medium-frequency power I
applications. The double epitaxial con- I
struction of these devices provides good I Applications:
forward and reverse second-breakdown
I
• Power switching
capability; their high gain makes it pos- nCS-2o"IRI • Audio amplifiers
sible for them to be driven directly from Schematic diagram for • Series and shunt regulators
integrated circuits. a/l types. • Hammer drivers
MAXIMUM RATI NGS, Absolute-Maximum Values: TERMINAL DESIGNATIONS
2N6385 2N6384 2N6383 2N6055 2N6056 RCA1000 RCA1001
*VCBO ...... ......
, , 80 60 40 60 80 60 80 v
VCER(SU')
RaE = lOOn· . . . . . 00 60 40 60 ao v
*vcEo(susl , ......... 80 60 40 60 80 60 80 V
VCEV(su,)
VaE = -1.5 V . . . . . . 60 80 V
"VCEX
VBE = -1.5 V, Raa = lOOn . . . 80 60 40 V JEDEC TO-204MA
"VEao· . . . . . . . . . . . . 5 5 5 5 V
"IC· . . . ......... . 10 10 10 a 8 8 A
ICM··· . .......... , .. . . 15 15 15 16 16 15 15 A
*Ie .... ........ . 0.25 0.25 0.25 0.12 0.12 0.1 0.1 rnA
"PT
TC ';;25°C. 100 100 100 100 100 90 90 W
TC >25°C ......... Derate linearly to 200°C
*T stg• TJ . . . ............. . -65 to +200 °c
"TL
At distance ~ 1/32 in. (0.8 mm) from
seating plane for 10 s max, .. 235 °c
'"'2N-Series types in accordance with JEDEC registration data format JS-6 RDF·2.
:"'~I.:"'"
4 10 100
COLLECTOR-TQ-EMITTER VOLTAGE (VCE)-V
92C$- 20692RI
I • .' "'0 .....
COlL.ECTOft....,.tO-E .. ITU:. ¥Ot".TAG£ tVCjt-v 0
Fig. 1 - Maximum operating area for 2N6383-2N6385. Fig. 2 - Maximum operating area for 2N6383 - 2N6385 at T C = 100 C.
_____________________________________________________________ 217
POWERTRANmsTORS __________________________________________________________________________
2N8383-2N8385, 2N8055, 2N8058, RCA1000, RCA1001

.00
ELECTRICAL CHARACTERISTICS,At Caar TmlPfreture, TC - 26"C Un_ Otherwllill$p8cifitKJ

Vdc Adc 2N8~ 2N8384 2N6383 UNITS
VCE VEa VaE IC IR MIN. MAX. MIN. MAX. MIN. MAX.
80 0 - 1 - - - -
"CEO 60 0 - - - 1 - -
40 0 - - - - - 1
80 -1.5 - 0.3 - - - -
60 -1.5 - - - 0.3 - -
'CEV 40 -1.6 - - - - - 0.3 rnA 10 3 2 ~ 6 10 4 2 4 f SIO!) 2 4 6 II 106
80 -1.5 - 3 - - - - NUMBER OF' THERMAL CYCLES
.
92C5- 19922
TC =150·C 80 -1.6 - - - 3 - - Fig. 3 - Thermal-cycling rating chart for

40 -1.6 - - - - - 3
2N6055-2N6056, 2N6383-
lEBO 5 0 - 6 - 5 - 5 rnA
2N6385.
VCEollU.) 0.2a 0 60 - 80 - 40 -
VCERlsu,)
··
'00
ReE = loon 0.2" 80 - 60 - 40 - V
VCEvlsu.) -1.6 0.2" 60 - 60 - 40 - •
1 I II I
hFE 3 5· 1000 20,000 1000 20.000 1000 20.000
{ ~
·
" CASE-TEMPERATURE CHANGE
3 100 100 - 100 - 100 - 6TC). ·C
'VeE 3 5· - 2.8 - 2.8 - 2.8 V ~ -

"
_~I\ <:.
- - - ::
3 100 4.5 4.6 4.5
1\ r'-"
;·
is
, VCEI .. t) sa 0.01· - 2 - 2 - 2 V
1\
. · . .. "". ...
100 0.1· - 3 - 3 - 3 '\
- - -
.t\:. .I~'~'\r
VF -10 4 4 4
~, "",
• h'e
f - 1 kHz 5 1 000 - 1000 - 1000 - '0' 10.
NUMSER OF THERMAL CYCLES
105 .0'
'!hf.1
f=1 MHz 6 1 20 - 20 - 20' - Fig. 4: Thermal-cycling rating chart for
'Cobo Vce le-O - 200 - 200 - 200 pF RCA/OOO, RCA/OOI.
f-l MHz -10
ISib
t -1.,
...
76
56
..
0.22
-
-
-
-
0.65
-
-
-- --
-
- A E ···
COU.Ec::TOIt-TO-£MITTER YOLTAO£ IYeE)· sv r-r-
non rep. 30 3.33 - 3.33 - 3.33 - i

ro JC - 1.75 - 1.76 - 1.76 ·C/W Ii: Itt
II:
• Pulsed: Pul .. duration =3DO lIS. duty factor = 1.11%. , ,<~ ~
, 2N·Serl.. typos In oc:cord ..... with JEDEC realotratlon dati format Js-6 RDF·2. Ii 2
..
~.",
u •
~~
i! · ~\
,
~
~ · . ... ·
OJ
COLLECTOR CURRENT Ilc'-A
!,\
_.-.or....
fora" types.
·
·
CURRENT lIe)et ..
COUEC'TOJI-TO.-EMrTTER VOLTME (VeElea
"I ·
'! CAlI TlMPEU1W1! 1Tel-l.e
i ·:
· "
I, ·
.~ '\
:J
I
··
· . .... . . \ . . . \
"00
· FREQUtNCV In-MHt
10
Fig. 6 - Typical input characteristics Fig. 7 - Typical output characteristics Fig. 8 - Typical sma/l-signal gain for
for 2N6383-2N6385, 2N6055, for 2N6383-2N6385, 2N6055, a/l types.
2N6056. 2N6056.
218
2N6383-2N6385, 2N6055. 2N6056, RCA1000, RCA1001

ELECTRICAL CHARACTERISTICS, At Case Temperature, TC =25"C Unle.. Otherwise Specified

DC DC
CHARACTERISTIC VOLTAGE CURRENT 2N6055 2N6056 RCA1000 RCA100l UNITS
V A
VCE VEa tv'aE Ic IE la MIN. MAX. MIN. MAX. MIN. MAX. MIN. ~AX.
30 0 0.5 0.5
ICEO mA
40 0 0.5 0.6
leER 60
ABE = 1 k n 80
leEA 60 mA
RBe "" 1 kn 80
TC = 150°C
60 1.6 O.S
ICEX mA
80 1.6 0.6
ICE X 60 1.5
TC = 150°C 80 1.5
-lEBO 2 mA
8' 100 100
• "'FE 4' 760 18.000 760 18,000 760 760 -
3' 1000 1000
V(BRICEO 0.18 0 60 80 V
COLLECTOR CURRENT (lei-A
VCEOhus) 0.18 60' 80" -
VeER sus Fig. 9 - Typical saturation charac-
R Be =:0 100 H O.la 60' - 80" - V
teristics for 2N6055, 2N6056,
VCEX(sus) 1.5 0.18 SO" - 80" - RCA TOOO, RCA 1001.
3' 0.012
• Vce(sat) 4' 0.016 - V
8' 0.04 -
8' 0.08 -
3' 2.5 2.6
• VeE 2.8 2.8
4'
V
VSE(sat) 8' 0.08 .-
"lh,,1
f= 1 MHz
.. Cobo
f =0.1 MHz, 200 200 pF
Vce=10V
* hie
300 300
f - 1 kHz
'SIb 33.3
t'" 1 5, A
40
non rep.
AOJC 1.75 1.75 1.94 1.94 °C/W
.. In accordance with JEDEC registration data format JS-6 RDF-2.

a Pulsed: Pulse duration"" 3'J01)5, duty factor = 2%
COLLECTOR-TO-EillITTER SATURAnoIII VOLTAGE
Fig. 10 - Typical saturation characteristics

for 2N6383-2N6385.
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- 3\1 COLLECTOR SUPPLY VOLTAGE IV(:c1saov

35 1 8 · -182 -IC/5OO, TC· 25• C
~ - ....... ti!"
,.• I-"""':::---+--+-+----t-i-i~N;;j
i 7.~
~ 5
2.5
o.• f----t---i-t-t---tt:::::I~~
2 5 $ 1 8 910
C(LLECTOR CURRENT tIC1-A
Fig. 11 - Typical transfer characteristics Fig. 12 - Typical saturated switching-time

for 2N6383-2N6385, 2N6055, characteristics for 2N6383-2N6385,
2N6056. 2N6055, 2N6056.
___________________________________________________________________ 219
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001
125
COLLEC'IllR CURRENT I ~-II
Fig. 13 - Maximum operating areas for 2N6055 and 2N6056.
~O _____________________________________________________________
,,
(
POWER TRANSISTORS
2N6386, 2N6387, 2N6388

8- and 10-Ampere N-P-N Darlington Power Transistors
60-80-100 Volts, 65 Watts Features:
• Operates from IC without predriver
These RCA devices are monolithic n-p-n the 2N6667, and the 2N6388 is comple- • Low leakage at high temperature
silicon Darlington transistors designed for mentary to the RCA8203B and the • High reverse second-breakdown capability
low- and medium-frequency power appli- 2N6668. Applications:
cations. The double epitaxial construction • Power switching
of these transistors provides good forward • Hammer drives
and reverse second-breakdown capability; • Series and shunt regulators
their high gain makes it possible for them to • Audio amplifiers
be driven directly from integrated circuits. r-----------,
These devices are supplied in the JEDEC TO-
I I TERMINAL DESIGNATIONS
220AB straight·lead version of the VERSA·
I I
I I
WATT package. Optional lead configurations
are available wpon request. For information, I I C
(FLANGE~
contact your nearest RCA Sales Office. I I

I I
The 2N6386 is complementary to the L _ _ _ _ _ _ _ _ _ --.l
/
E
RCA8203 and the 2N6666, the 2N6387 92CS-21519
is complementary to the RCA8203A and 92CS-20691RI BOTTOM VIEW

Fig. 1 - Schematic diagram for a/l types. JEDEC TO-220AB

2N6388 2N6387 2N6388
VCBO 40 60 SO V
VCER(sus)
RBE = lOOn
VCEO(sus) .
VCEV(sus)
40
40
60
60
SO
BO
V
V
··, COllECTOR-TO-EMITTER VOLTAGE (VeE}.3V
I I
~...l
I
VBE = -1.5 V
VEBO
40 60
5
BO
5
V ....'0;
t r--
~~
5 V 4
IC· B 10 10 A 2 ~
i r--~
ICM 15 15 15 A
2
V r.~;"-
lB·
PT
'0.25 0.25 0.25 A
··
'0:
,
~
ll\
. ..I' , . ..
TC":250C 65 65 1)5
Tc> 25°C
Tstg, TJ.
Derate linearly to 150u C
-65 to +150
W
oc
-'Ii
0.1
, . ." ,
COLLECTOR CURRENT IIcl-A
TL At distances;> I/B in. (3.17 mm)

from case for lOs max. .. Fig. 2 - Tvpical dc beta characteristics
235 OC
for 2N6386, 2N6387, and
• 2N- Series types in accordance with JEDEC registration data format JS-6 RDF-2. 2N6388.
10°8
COLLECTOR CURRENT IIel-' A
•
..I 4 I I
COl.LECTOR-lO-EMITTER VOLTAGE tVeE)-'
CASE TEMPERATURE "c,-25·C
~
eo 2 ~
\ ~
~ r\ ~
if '0
•? 1\
:i15
~ I~~~~">
·6
4~
i -g "'. •
",:
~ I' ~1\ I~
2~ \
, r\
4 6 8'04 2 4 6 ara!) 2 " 4 6 8 I
NUMBER OF THERMAL CYCLES COLLECTOR-lO-EMr"ER VOl.TAGE IVcEl-Y

FREOUENCYlfI- MHI 1ICS-19925
Fig_ 3 - Thermal-cycling rating chart for Fig. 4 - Typical small-signal gain for Fig. 5 - Typical output characteristics for
2N6386, 2N6387, and 2N6388. all types. 2N6386, 2N6387, and 2N6388.
___________________________________________________________________ 221
POWER TRANSISTORS
2N6386, 2N6387, 2N6388

ELECTRICAL CHARACTERISTICS,At Case Temperature fTC) =2!jOC Unless Otherwise Specified
TEST CONDITIONS
VOLTAGE CURRENT
LIMITS " IOO,125"C
100,125°C
CHARACTERISTIC 2N6386 2N6387 2N6388 UNITS
SYMBOL Vdc Adc
8.0 .0 - - - - - 1
• ICED 6.0 .0 - -- - 1 - - Ie lie (FORCED hFEJ~IOOO
TC .125 Q C
4.0 .0 - 1 - - - -
8.0 -1.5 - - - - - .0.3
• ICEV 6.0 -1.5 - - - .0.3 - - rnA
4.0 -1.5 - .0.3 - - - -
8.0 -1.5 - - - - - 3 , ,
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [VCE (sot 1] - v
TC=125OC 6.0 -1.5 - - - 3 - -
4.0 -1.5 - 3 - - - -
Fig. 6 - Typical saturation characteristics for
• lEBO 5 .0 - 5 - 5 - 5 rnA
2N6386, 2N6387, and 2N6388.
• VCEO(sus) D.2a .0 4.0 - 6.0 - 8.0 -'
VCER(sus)
RBE = lODn
.o.2a 4.0 - 6.0 - 8.0 - V
VCEV(sus) 1.5 .o.2a 4.0 - 6.0 - 8.0 - COLLECTOR-lO-EMITTER VOLTAGE (VCE) ~ 3 V
3 3a 10.0.0 2.0,.0.0.0 - - - -
hFE
3 5a - - 1.0.0.0 2.0".0.0.0 10.0.0 2.0,.0.0.0
3 8a 1.0.0 - - - -
3 lO a - - 1.0.0 - 1.0.0 -
3 3a - 2,8 - - -
VBE
3 5a - - - 2.8 - 2,8
V
3 8a - 4,5 - - - -
3 lOa - - - 4,5 - 4.5
3 a D.DD6a - 2 - - -
VCE(sat)
5a Dm a - - - 2 - 2
V
8a D.D8a - 3 - - -
, 2
1Da D.1a - - - 3 - 3 BASE-lO-EMITTER VOLTAGE IVSE}-V
VF
-8a - 4 - .- - - V
-1Da - - - 4 - 4 Fig. 7 - Typical transfer characteristics for
hfe 2N6386, 2N6387, and 2N6388.
f = 1 kHz 5 1 10.0.0 - 1.0.0.0 - 10.0.0 -
Ihfel
f = 1 MHz 5 1 2.0 - 2.0 - 2.0 -
COLLECTOR SUPPLY VOLTAGE {VCCI-20 V
--
Cob
VCB=1DV, - 2.0.0 - 2.0.0 - 2.0.0 pF
,. I, ~ -Ie -Ie/SOO, TC=2S·C
f = 1 MHz , ,
ISlb
2,'
r--. I,
t = 1 s, nonrep, 25 2.6 - 2,6 - 2.6 - A

R8JC - 1,92 - 1.92 - 1.92 °CIW 2
a Pulsed: Pulse duration =300 IJ-S, duty factor =1.8%. I,'
* In accordance with JEDEC registration data format JS-6 RDF-2. ....-""-

P'"
I
0.'
r- I-i-!l.
COLLECTOR CURRENT (lCI-A

. , , , ,,
I
Fig. 8 - Typical saturated switching· time

characteristics for 2N6386,
2N6387, and 2N6388.
222 ________________________________________________________________
POWER TRANSISTORS
2N6386, 2N6387, 2N6388
92CS-26901
Fig. 9 - Ma:cimum operating areas for 2N6386, 2N6387, and 2N6388 at T C = 25° C.
10
10
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V
12CS-11900
Fig. 10 - Maximum operating areas for 2N6386, 2N6387, and 2N6388 at TC = 100°C.
223
POWERTRANSISTORS ___________________________________________________________________________________
2N6420, 2N6421, 2N6422, 2N6423

High-Voltage Medium- .Power Silicon P-N-P Transistors
For High-Speed Switching and Linear-Amplifier Applications
Features:
The RCA-2N6420, 2N6421, 2N.6422, and operational amplifiers, switching regulators, VCEO(sus) -175 V max_ = (2N6420)
2N6423 are epitaxial silicon p-n-p power ... = -250 V max. (2N64211
converters, inverters, deflection sUlges and
transistors with high-voltage ratings and high-fidelity amplifiers. =-300 V max. (2N6422)
fast switching speeds_ Typical applications =-300 V max. (2N6423)
These types are supplied in steel JEDEC • Large safe-operating area
for these transistors include. high-voltage TO-213MA hermetic packages: • Thermal-cycli ng rating
MAXIMUM RATINGS, Absolute-Maximum Values: TERMINAL DESIGNATIONS

2N6420 2N6421 2N6422 2N6423
-250 -375 -500 -500 V
-175 -250 -300 -300 V
-6 V
-1
-5
2 ----- A
A
-1 A
20 W
• 35 W
See Fig. 1 JEDEC TO-213MA
See FifP. 1 &3
_ _ _ _ -65 to +200 ·C
_ _ _ _ _ 235 _ _ _ __
·C

·• ~.
CASE TEMPERATURE CTcl-IOO.C
(CURVE MUST BE DERATED LINEARLY
WlTi'NCjEjE IN TEMl'RAjREI
c
".
5 ·
!j
'
1_1 ttQ"~:UcJ,.,1
•
4
~D/~ J
iiiU~O.l •
,;I-
~
.
•
4
'"-.,
<",
':>00. _
,~-
8 zr-YCEO MAX.--175V (2N6420) -
I !1
-I
.
~ ~ VCEO MAX.·'-2!1OVI2N6421)
~ YCEO MAX.--300Y(IN6422.2N642S1
••
•COLLECTOR-TO-EMITTER
• •-10 • • VOLTAGE
• •-100 (VCEI-V•••-1000
elcl-IOI4!
Fig. 2 - Maximum operatino areas for all

types, a~ T C = 100 C.
~.
d
i~1
l!I.~ 100
iSi TO
!is! .0
.~~
~NI
~~~
~
••
110 .. 100
46!.lh 4
COLLECTOR-TO-EMITTER VOLTAGEIVCEI- V
Fig. 3 - Derating curves tor all types_
nCIl-30343
Fig. 1 .~ Maximum operating areas for all types at T C = 25°C.
224 ________________________________________________________
2N6420, 2N6421, 2N6422, 2N6423

ELECTRICAL CHARACTERI$TlCS, At 0..Temp6tlture (TC) = 25"C
Unl_ OtherwilMl $ptIcifild ·· 1
• ,V
1
~J •• '.1"1°'1'1
~~~II
TEST CONDITIONS LIMITS ~
CHARAC- VOLTAGE CURRENT 2N6421 ~
~"'" c~
. ··· 1\
2N8420 2N6423 Units : 10
TERISTIC Vdc Adc 2N6422
~
~.'<J'
"
Q
VeE VaE IC la Min. Max. Min. Max. Min. Max.
* ICEO -150 - -10 - -5 - -5 f , ~~.I

1~-·_1b~ ~~ ~
* ICEX -225
2N6421 -340
2N6422 -450
1.5
1.5
1.5
-
--
-1
- -
- -
- --1
-1
-
--
-
-
- rnA
°• 10
, . II lI,ba , .
HUYlER OF THERMAL-CYCl.ES ITHOUSANDS)
• "ODO
r-...... ,
-450 1.5 - - - - - -2
* ICEX -225 1.5 - -3 - - :... - Fig. 4 - Thermsl-cycling rating chart fDr all typas.
Tc=15O"C -300 1.5 - - - -3 - -5
• lEBO 6 0 - -5 - -0.5 - -0.5
hFE -10 -0.1· 40 - 40 - 40 -
, -10 -0.58 40 200 - - - -
* -2 -0.758 - - - - 10 100
-10 -0.758 -" .- - - 30 150
* -2
-10
-II
-II
- -- 8 80
100
-
-
-
-
* 10 25
VBE -10 -I· - -1.4 - -1.4 - -1.4
-0.751 -0.075 - - - - -1.8 -
* VBE(sat) -II -0.1 - -1.4 - -1.4 - - -0.01 II ~.I 4 _I 2 46'_10
-0.758 -0.075 - - - - - -1 COLLECTOR ctlRRI!:NT tIel-A

VCE(sat) -II -0.125 - -5 - -0.75 - - V
* VceO(sus)b
2N6421
-0.058
-0.058
0
0
-175
-
-- -250
- -- -300 -
- -
Fig. 5 - Typical de b8U characteristics for all typas.
2N6422 -o.05a 0 - - -300 - - - COLLECTOR-TO-EMITTER vot.TAIE IVCr)--IOV

CASE TEMPERATURE ITc)-2.5-c
ISlb -100 ·-0.15 - f-0.15 - -0.15 - A

l!
2
I 3
* Ihfe l
f= 5MHz -10 -0.2 2 - 2 - 3 - :
~
3
/7
* f = 1 kHz -30 -0.1 25 350 - - - -
§
2
2
Cobo \
VCB=10V
f= 1 MHz
0 -
-
180 -
-
180 -
--
180 pF
i 1
1
\
\
* trC -0.75
-1
-0.75
-0.07~
-O.ld
-o.075d
-
-
-
-
-
-
-
-
-
3
-
0.5
-
6
•
-0.01
. .. . . .. . . .
-0.1 -I
COLLECTOR CURRENT I Ie J- A
* tsC -1 -O.ld - - - 4 - - ILS

Fig. 6 - Typical gain-bandwidth product for all typ ...
* tfC
-0.75 -0.075d - - - - - 3
-1 -o.ld - - - 3 - -
R8JC -10 -1 - 5 - 5 - 5 CIW
*In accordance with JEDEC ragistration data. CYCC· -200 Y, tp ~ 20,..
• PuINd: pul.. duration· 300 ,.S, duty factor <: 2%. d-fa,· fa 2
bcAUTION: The sustaining voltage YCEO(suI)
MUST NOT be measured on 8 curve tracar.
COLLECTOR CUIUlIENT (Iea-A nC'-lnM

Fig. 7 - Typical saWration-voltage characteristics
for al/ tyP"'.
_________________________________________________________________ 225
2N6420, 2N6421, 2N6422,2N6423
.CQLUC1'OIII CUIRIN't llel-A

.......untl
Fill. 9 - TypiCIII rtDrIIfIe' rime cMf7JCterinic for

Fill. B - TypiCIII tra",fer chsf7JCterlnlc. for 1111 ty"... 1111 typel. Fig. 10 - TypiCIII turn-on time and felH/me
cfrllracteri.tlcl for all typer.
226 _____________________________________________________________________
POWER TRANSISTORS
2N6477,2N6418, RCA3441,RCA6263
Hometaxial-Base, Medium-Power Silicon Features: • MaKimum safa-area-of-operation curves
N-P-N Transistors . Lowsatu ••,ionvoltage.
• High dissipation ratingl
Designed for Medium-Power Linear and Switching Service • Thermal-cyding rating curves
in Consumer, Automotive, and Industrial Applications
Applications:
RCA 2N6477 and 2N6478 are hometa)(ial-base silicon n-p-n to second breakdown over a wide range of operating conditions. • Saries and .hunt regulaton
transistors intended for a wide variety of medium-ta-high Ttle VERSAWATT case has a proven thermal·cycling capability.
power. high-voltage applications. These devices, which are • High-fidallty amplifien
This capability is assured by real-time Q~.ality controls in our
voltage extensions of the 2N5298 family. are especially useful manufacturing locations. All these types are supplied • Power switChing circuits
in vertical output stages in color and black-and-white TV. The in the JEDEC TO-220AB' straight-lead version of the • Solenoid driver.
units differ in voltage ratings and in the currents at which pera-
meters are controlled.
package. They are also available on special order in variety ofa • Vertical cutpu1m. . In color
lead-form configurations. Two popular variations have leads and B/WTV
formed to fit TO-66 sockets (specify formed lead No. 6201)
RCA3441 and RCA6263 are silicon n-p-n transistors intended or printed-circuit boards (specify formed lead No. 6207).
for a wide variety of high-current applications. The hometaxial· Detailed information on these and other VEASAWATT outlines TERMINAL DESIGNATIONS
base construction of these devices renders them highly resistant may be obtained from your RCA Sales Office.
MAXIMUM RATINGS, AbsDlute·M~/Ili"'um Values:

.*077 _78 RCA8283 RCA3M1
COLLECTOR·TO·eASe VOLTAGE IFLACNGE)
VCBO 140 160 140 160 V
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE
With eIlternal ba5e·to-emll1er resistance CReel = 100 n VCERhus) 120 140 120 140 V
With base open VCEOhusJ 130 150 130 150 V
With t..se rel/erse·blased VeE'" -1 5 V VCEVlsus) 140 160 140 160 BOTTOM VIEW
V
EMITTER·TO·BASE VOLTAGE 92C5-21519
VeBO V
CONTINUOUS COLLECTOR CURRENT 2.5 2.5
'e
PEAK COllECTOR CURRENT. "
A
JEDEC TO-noAa
CONTINUOUS BASE CURRENT
TRANSISTOR DISSIPA nON
At case temperatures up to 25°C
'.
P,
50 50
0..,. 1I_ly '0 lSOoC
36 3.
"
W
AI case temperatures above 25°C
1.• 1.8 W
TEMPERATURE RANGE w/'c
[)eratelinearly.t 0.0144
Storage and Operating (Junction) -65 to 150 ·C
PIN TEMPERATURE lOuring Soldering)
At distance, ~ 1132 In. 10.8 mm) from seating plane fOI 10 $ max. 236 "C
• 2N- Series types in accordance with JEOEC registration data format JS-6 RDF-2.
ELECTRICAL CHARACTERISTICS. At Case Tempera.,,. ITC) = 2tt'C unless otherw;ge specified
TEST CONDITIONS LIMITS "r---~---t--r-~----r---~-t-t~

2Nscn 2N6478
Vdc Adc
VCE V BE 'C '8 MIN. IIIAX. MIN. MAX.
· Coliector·Cutoff Current:
With base ooen
With base-emitter
ICED
'CEV
80
100
130 -1.6
mA
junction revene-biased 160 -1.5
120 -1.5 10
AtTC= 150°C ICEV
·
140 -1.5 10
Emitter-Cutoff Current 'EBO 6 mA
Collector·to-Emitter Sustaining
Voltage: VCEO(susl 0.1· 0 120 -; 140 NUMBER OF THERMAL CYCLES
With bast! open
With external ba59-to-emitter Fig. 1 - Thermal-cycling rating chart for
O.l a 130 160
resistance (RBEI = 100 n VCER(sus) V
2N6477, 2N6478_
With base-emilter junction
VCEVCSUS) -1.5 O.l a 140 160
•
reverse-biased
DC Forward-Current Transfer
hFE
,. 25 150 25 150
·•
Ratio 2.5a 5 5
100.
·
Collector-to-Emitter I" 0.1
VCE(sati V
Saturation Voltage 2." 0.5
~
4 l' I.B 1.8 I
Base-to-Emitter Voltage V BE V ' I
· ~z
4 2." 3
Magnitude of Common-Emitter,
Small-Signal, Short-Circuit 0
"::
'-r-.,/~~~..
Forward·Current Transfer Ratio: Ih,. I 4 0.5 ~ 10 _ . +~A [\ ~"-o
~ l~?'
f=40kHz
·
Gain-Bandwidth Product
Common-Emitter, Small-Signal,
'T 4 0.5 200 200 kHz
E
~
Ii ·,
•
.\ L\L"L~\~o...
Short-Circuit Forward-Current
Transfer Ratio: hi. 4 0.1 25 25
!" , 1111 1\1\\(~<1>
~, } , \~ .. ~~~~~
, ..
f = 1 kHz
Thermal Resistance:
, ,
Junctlon-to-Case R8JC 2.5 2.6 1000 10,000 100,000
°CfW NUltllSER OF THERMAL CYCLES
Junction-to-Ambient IU IU
R8JC 92CS-20'0a
*In accordance wit" JEDEC registration data format IJS-6 ROF-21. a Pulsed: Pulse duration = 300 ,.5, duty factor" 1 B%. Fig_ 2 - Thermal-cycling rating ctuirt for
CAUTION: The sustainingl/oltage VCEO(sus). VCER(sus., and VCEVCsus' MUST NOT be measured on a curve tracer. RCA3441, RCA6263_
__________________________________________________________-----227
POWER TAAN$ISTOAS
2N6477, 2N6478, RCA3441. RCA6263

ELECTRICAL CHARACTERISTICS, At ea.. T.",,,.,.tunJITcJ • 26"c unr... otherwi.. fp4Cified
~~~;..;:;=T~:;~~~T:Gf: CVeEI- 4V :1
TISt CONDITIONS LIMITS I.'
!
VOLTAGE CURRENT 2
CHARACTERISTIC SYMBOL RCA8283 RCA3441 UN'TS I I~
V .. Ade
~ V
V~ Vp VaE 'c 'a MIN. MAX. MIN. MAX. t 0.8
CoI _ _.c:utoff Cumtm:
a a
Withbl• ...,
'ceo 1.00
.20 a
5
i! 0.. 1""-
~
With bI.-emltt., ICEX 120 -1.6
A.TC
iunctiOn rlvtr'lI-b.....
-,&O"C 'cex
.40
120
- • .6
-1.5 10
mA
I ~4
'40 -'S '0 ~ 0.2
Emltttr-Cutoff Current
Collectot-to.£mltter
Sulteinlng Vo....:
lEBO
VeEof... I' D.'· 120 140

mA i
10 .
. .. , , . ..
10
COLLECTOR CURRENT tIe J - mA
10'
With btII open
With axWl'nll-...co.-
.1«., real_net VCSRbus' 0.'· 130 160 V Fig. 3· Typical gain·bandwidth product
IRBE'- ,oon for a/l types.
With bIIIe·emine" junction VCEV'IUl) -1.5 0.1' 140 '60
,..,.,.-billid
DC FOfV4I'd.Cur,ent hFE 0.S8 20 150 20 150 _ 140
Transfer Rat'lo COlLECTOR-TO-DlITTER VOLTAGE tVCE'=4 v
Coillctor.·.o-Emitter
Saturetion Vol....
Vce ' • tI 0.58 0.06- ..• ..• V
!-
0
120
,
a...to-Emlt.... Volt... OS8 i 100
;
VeE V
Gain-Bendwldth Product 'T 0.2 200 200 kH,
~
V' ['.
Common·Emltter•
Sm.n-s......I. Short-
Circuit FOfWllrcf. .... A.' 26 26
! 60
V'
, CASE TEMPERATUftE
ITc)·2,.C
Currin' Transf... R.tto

'OV
1\
(f-1 kHI)
~.or""Biu StcoIMI
i
~ 20
'l0e
S,IIkdown Collector
C""..... I.:!: ",
ThtrmIIl A._nee:
Junction·ro-e..
'Sib
R. JC
120 0.3
3.6
0.3
3S
A
g
10- 3 2: " ••
10"
~OLLECTOR
2 ... 10'1
CURRENT {lel- A
~~ . .. 10
·CIW
Junction-to-ArnbiMt R'JA 70 70 Fig. 4· Typical dc beta characteristics
"ullld: ~. . cklr.tion • 300 "', duty fltetor • 1.8%. bpull8d: l·_q,nd nQn-repetL1Lvepulse. for2N6471.
.... 140
!;; 120 k"' - l'-. , COLLECTOR'TO-DfITT£R VOLTAGE IVCElo4V
i 100
~
~ 80 V
~ V
~s
I •• J·2,.e
TEMPERATURE
80 TC
V
c Ii! Ijoe
I J
~
. . ..,.. . .,.1 , . "" .

20
u 8 I'
t! ,
~.
..... '
COLL£CTOR CURRENT (Ic1- A
10
Z
101
IE
IE Fig. 5· Typical de beta characteristics
:;)
c.> for2N647B.
~.
~
c.>
101
........ 4
.. I.'
0
c.>
2
~O.5
~
""
50 100 150 200
COLL[CTOR-TO-EMITTER VOLTAGE IVCEI-V
Flg. 7· Typical output characteristics

Fig. 6· Maximum operating areas for 2N6477 and 2N647B. for 2N647B and RCA3441.
~8 _____________________________________________________________
POWER TRANSISTORS
2N6477,2N64?8,RCA3441,RCA6263
10. (T~).2S.~.;:
, =-TEMPERAnJRE
"
.. .' ,,'
4
[C MAX. p, .SED' PULSE vr.~n. IIV :;:
;!
iI'l
;
,i
2,5
f~,:~AJ.
[C I
. JnU:,1
!
; '"
; i;,.
, ".;.1 , r: ;0-
40
•
., Pi 1':,1,
..
~
«
i
'.
i, ::, ~no
2Il
,0
I I ioO",
"!:!.... • i ,
6 , '~~'
Z 50 100 1110
' <;i' ',"I
'"'" • "
',' "" 'I'"

COU.£CTOR-TO-t:MITTER VClLTAGI: IVCEl-V
'"
::J
<.>
Fig. 9· Typical output characteristics
'"....
0
<.>
2
:~f:r;1~ri1E~rE i~~~
. ,:~n.1??w"OC.
. ~RE)··
•
a
for 2N6477 and RCA6263.
'"
.J
.J
0 0.1
i i I lit .L .J. i ~or
E" ~3~~~~~~T~IV~
<.>
B
• 20'
• V
I .C~q MAX .• 140 V«N.
t-- "'f" 'MAX. ; 126 v' {2N64'
2
Illillllll
~ IkHtllllt , i
I:'
2
10 • 2
• 100 140
120
1000

92CS-22442
BASE-TO-EMITTER VOLTAGE IVB£)-V
Fig. 8· Maximum operating areas for 2N6477 and 2N6478.
for 2N6477 and 2N6478.
C(
I
~
....
...z
II:
II: for RCA3441.
=>
U
II:
....o
...u
...J
...J
8
2 4 6 8 2 4
9ZCS-22UO
Fig. 11 - Maximum operating areas for RCA3441, RCA6263. for RCA6263.
-------------------------------------------------------------~
flOWER TRANSISTORS
2N6479, 2N6480
Radiation-Hardened Silicon N-P-N Power Transistors
Epitaxial-Planar Types for Aerospace and Military Applications
Rated for Operation In Radiation Environments

with Cumulative Neutron Flu.nee Levels to 1 x TERMINAL DESIGNATIONS
1014 N.utronslem2 and Gamma Intensity to 1 x
108 Rad(SI)/s
The RCA-2N6479 and 2N64S0· are The 2N6479 and 2N64S0 are intended
epitaxial silicon n-p-n planar power- for use in 5-to-10 ampere high-
switching transistors_ They are de- frequency power inverter service_
Signed for aerospace applications in They are supplied in hermetic flat
which they might be subjected to ex- 3/4-inch (19_05 mm) diameter
treme neutron and gamma-ray ex- packages with radial leads_
posure_ . "Formerly RCA Dev. Nos. TA8007 and
TA8007B, respectively. _'-27523
(RADIAL)
MAXIMUM RATINGS, Absolute-Maximum Values
2N6479 2N6480
• VCSO··························.····.·.· ..... 100 100 V
VCEA(SUS)
ASE" 1002 .......................•........ SO 100 V
• VCEX·········· .............................. . 60 sq V
• VCEO(SUS) ................................... . 60 SO V
6 V
·,C'CM·······.·.·.·
..........................................
• VESO········.··· ........................... .
.
.... · ...................... .
12 A
·,S .......................................... .
• Pr:
25
5
A
A ""'to
TC" 25·C ................................ . 87 W

TC<25·C ................................. . __ See Fig. 1 and 5 __
TC = 100·C .............................. ,
• TJ, Tstg ..................................... .
50
-65 to 200
W
·C .. . 100111150";'_
• TL:
During soldering, at distances 1132 in. (0.8 mm) Fig. 1 - Derating curves for both types.
from seating plane for 10 s max............... . 230 ___ ·C
'In accordance with JEDEC registration data
'00,
~ 6 CASE TEMPERATURE ITe '-25-C
II
io ·+--~~---T-----r----~I/r---~
!c
~'2r---~-----T-----r----~--~
!c I 1.
;1"+-=+==+===+=::++===1
~~Ir- /
a~6r----i-----r----~7'---t---~
~~ ·~=+~~~t~--r-~
~ 'r---~-----r-----r----+---~
10-1 I
. .. . ..,.'
10 1
COLLECTOR CURRENT 11CI-A
~ 0.1
10 10 lO"
I~M. V-EQUIVALENT
lOll!' 1013 Id
4
NEUTRON n.UENCE (+I_NEUTRONS/c",2
1015
12CS-Iun
Fig. 2· Thermal-cycling rating chart for both
types. ' Fig. 3· Typical1-Me V-equivalent neutron dam· Fig. 4 . TypIcal. collector·ta-emitter saturation
age coefficient as a function of collec- voltage as a function of 1·Me V·equlv-
tor current for both types. alent neutron flutlnce for both types.
230 ___________________________________________________________________
--------___________________________________________________________________ POWERTRANSISTORS
2N6479, 2N6480
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25'C
PRE·RADIATION
CHARACTERISTIC VOLTAGE CURRENT 2N8479
Vde Ade 2N8480 UNITS
VCE VaE IC la Min. Max.
ICBO 100a 1 -
mA
ICES 60 200 -
",A
ICEV 100 0 1 -
(TC =
100'C) 60 0 - 1 mA
lEBO -6 2 -
VEBO (IE =
2 mAl 6 -
VCEO(sus)b 2N6479 0.2C 60 -
2N6480 0.2c 80 V -
VCER(sus)b (RBE = 1002)
2N6479
2N6480
0.2c
0.2c
80
100
--
hFE 2 12C 20 300
VBE(sat) 12c 1.2 - 1.5 V
VCE(sat) 12c 1.2 - 0.75
ISlb (t =1 s) 12 7.3 - A
ES/b (RBE = 100 2, 1.25 - mJ
L= 100jolH) 5
. Ihfel (f =
10 MHz) 5 1 10 -
fT 5 1 100 - MHz
Cobo (f =1 MHz) 10a - 400 pF
tr 30d 12 1.2 - 400
ts 30 0 12 1.2e - 800 ns
tf 30d 12 1.2e - 200
RailC 10 5 - 2 'C/W
*In accordance with JEDEC registration data.
'VCS value.
bCAUTION: The sustaining vollages VCEO(SUS) and VCER(SUS) MUST NOT be measured on a curve
tracer. These sustelnlng voltages should be measured by means of the test circuit shown In Fig. 10.
·Pulsed; pulse duration .. 350 ~s, duty factor .. 2%.
dVCC value.
alS1 = -IS 2 .
TYPICAL CHARACTERISTIC DURING GAMMA EXPOSURE FOR DOSE RATES

OF LESS THAN 1 x 108 RAD(SI)lsee
CHARACTERISTIC For both UNITS
VOLTAGE - V de Types
~
Vca VaE TYPICAL
Collector· to· Base Coulomb
Charge Generation 20 0 5x10-B
Rad
Constant (C)
The charge generated In the depletion region of a transistor IS proportional to the volume of the
depletion region, the total dose, and the energy of the gamma radiation.
The primary base-collector photo current II pp(base~ = (C)Y. where y is the gamma dose rate in:
Rad(SI)/s.
_________________________________________________________________ 231
POWER TRANSISTORS __________________________~--------------------------------------------------
2N6479, 2N6480
POST·NEUTRON·RADIATION ELECTRICAL CHARACTERISTICS ! CASE TEMPERATURE ITe)' tOO·C-
AFTER EXPOSURE TO 5 x 1013 NEUTRONSlem2 (1 MeV equlv.), At Case

Temperature (TC 25"C = ·, 1.e
I III
,
MAX.(CONTlNUOUSl
CHARACTERISTIC
TEST CONDITIONS
VOLTAGE
V de '
CURRENT
Ade
LIMITS
2N8479
2N6480 UNITS
10
···, ." ".<,

l~'(/.,
1 1)o~O
VCE VBe IC IS Min. Max.
ICEV
IEeO
100 0
-5
-
-
1.2
2.2
mA
I
··,
• t---- I- IS/b-LlMITED
III \
VCEO(suS)D 2N6479
2N6480
0.2C
0.2C
60
80
-
- V
0..1
, . ..III
10
, . .. , . ..
\
100 lOCO
hFE 5 ,7C 12 - COLLECTOR -rO:EMITTER VOLTAGE 1Vc£I-\I
Fig. 6· Maximum operating area for both types

VeE(sat) 7c 1.4 - 1.5 V (TC = 100·C).
VCE(sat) 7c 1.4 - 1.5
e,L __
Ihfel (f = 10 MHz) 5 1 10 i : 100 CASE noM ERA UR TC =25
COLLECTOR-fO-EMITTER V_OL.T~E 1\1(£)-2\1 _" __
K'" - 9x10- tI ~ , - -- - +-- -~
*In accordance with JEDEC registration data.

bCAUTION: The sustaining voltage VCEo(sUS) MUST NOT be measured on a curve tracer. This sus·
taining voltage should be measured by means of test oircuit shown In Fig. 10. i
cPulsed; pulse duration .. 350 "s, duty factor .. 2%.
Knowing K, hFE2 may be oalculated for other

;
'"Damage constant K =
fluences using the relationship:
I
10.
Where hFE1 = Beta prior to exposure o. 4 ~ 8 I 4 6810
hFE2 = Beta after exposure <:Ol.L.E:CTOR CURRENT tlcl-A 92ts-:mi2
9 = Neutron fluence (1 MeVequlv.) Fig.' 7· Typical dc beta characteristic for both

types.
C:Ou.£tTOR CURRENT tlCI -A

9:tel-2HZ!
Fig. 8· Typical base·to·emltter saturation

voltage characteristic as a function of
colleotor current for both types.

92CS-21121RI
Fig. 5· Maximum operating areas for both
types (TC=25 ·C).
COU.ECTOR CURRENT IICI-A
Fig. 9· Typical collector·to·emltter saturation

voltage characteristic as a function of
col/ector current for both types.
232 ___________________________________________________________________
--------------------------________________________________________ ~ __________ POWERTRANSISTORS
2N6486-2N6491
15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base
VERSAWATT Transistors Features:
• Thermal-cycling ratings.
Complementary Pairs for General-Purpose • Maximum safe-area-of-operation curves
Switching and Amplifier Applications • Color-coded packages of molded-silicone plastic:
Green - p.n-p (2N6489, 2N6490, 2N6491)
RCA-2N6486-2N649'·, inclusive, are epitaxial-base silicon These devices are supplied in the RCA VERSAWATT package Gray - n-p-n (2N6486, 2N6487, 21\16486)
transistors. The 2N6486, 2N6487, and 2N6488 are n-p-n in color-coded molded-silicone plastic; the 2N6489-2N6491
complements of p-n-p types 2N6489. 2N6490, and 2N6491, (p-n-p) devices are green, and the 2N6486-2N6488 (n-p-n)
respectively. All these devices are intended for a wide variety devices are gray. All are regularly supplied in the JEDEC TO-
of medium-power switching and amplifier applications, and TERMINAL DESIGNATIONS
220AB straight-lead version of the package. They are also
are particularly useful in high-fidelity amplifiers utitizing com- available on special order in a variety of lead-form configu- 8
plementary-symmetry circuits. rations.
• Formerlv RCA DEN. Nos. TA8325, TA8324. TA8323. TA8328. C
TA8327, and TA8326. respectively. (FLANGE I
N-P-N 2N6486 2N8487 2N6488
MAXIMUM RATINGS,Absolute·Maximum Valu(/s:
P·N-P 2N648" 2N84. . . 2N6491.
" COLLECTOR· TO·BASE VOLTAGE VCBO V
50 70 90
COLLECTOR-TO-EMITIER VOLTAGE:
BOTTOM VIEW
With 1.5 velts (VSE) of reverse bias, and external
base·te·emitter resistance (RSEI" 100 n VCEX 50 70 90 V JEDEC T0-220AB
With external base·te-emitter
resistance (RBE) '" 100 n VCER 45 65 85 V
With base open . VeEO 40 60 80 V
"EMITTER· TO-BAse VOL TAGE_ VEBO 5 V
"CONTINUOUS COLLECTOR CURRENT IC 15 IS 15 A
"CONTINUOUS BASE CURRENT IS S A
"TRANSISTOR DISSIPATION: P,-
At case temperatures up to 250C. 75 75 75 W
At ambient temperatures up to 250C 1.8 1.8 1.8 W
At case temperatures above 250C. Derate linearly 0.6 w/oe
At ambient temperatures above 250C Derate linearly 0.0144 Wl"C
"TEMPERATURE RANGE:
Storage and operating (Junction I . - - - - 6 5 to +150 - - - "C
" LEAD TEMPERATURE lOuring soldering):
At distance 2 1/8 in. (3.17 mml from
seating plane fer 10 5 mBX. -100 -50 02550 100 150 2011 Z5II
235---- °c CASE TEMPERATURE (Tel-OC
ill 'In accordance with JEOEC registration data format JS-6 ROF-2. • For p.n-p devices, \loltage 8nd CUtrent vatues Ire "89IItiVII.
ELECTRICAL CHARACTERISTICS, At case temperature (TC) ;: 2SOC unlea otherwise specified Fig. 1 - Derating chart for all types.
TEST CONDITIONS LlMlrs
VOLTAGE CURR 2N6486 2N6487 2N6488
Veil: Adc 2N64890 2N6490+ 21\16491. PT {MAX.j·75W-
VCE VIE 'C Min. Mo•. Min. Mu: Min. Mo ••

Collector-Cutoff Current: 35 500
With ellternal base-emi1ter 55 500 .A
resistance (RBE) '" lOOn 15 500
With Dase-emitter junction reverse 45 -1.5 500
biased and external base-to-eminer 65 -1.5 500 .A
resistance IRBEI '" lOOn 8S -1.5 500
40 1.5
BO -1.5 mA
80 -1.5
20
With base open Iceo 30 mA
40
• Emltter·Cutoff Current -5 mA la' la'
• DC F."rward-Current S" 20 150 20 150 20 150 NUMBER OF THERMAL CYCLES
Tri!Jnster Ratio hFE lS" 5 5 5
Collector-ta-Emltter Fig. 2 - Thermal-cycling rating chart
Sustaining Voltage VCEOlsusl 0.2 40b 60 b 80b
£~r :JIll tl~nP~
With base open
With ellternal base-emitter COLLECTOR-TO-EMITTER WL.TAGE IVcE)-4V
resIstance IR BE ) " lOOn 0.2 45 b 65 b 85 b II CASE TEMF"£RATURE {Tel-aS- c
With base·emltter junction reverse-

biased Bndexternal base·to-emitter VCEX!sus) 1.5 0.2 sob 70b 90b
resistance IRBe)" lOOn
4 S" 13 1.3 1.3
• Base-to·Emltter Voltage V BE 4 15' 3.S 3, 3.S
• Coliector-to.Eminer - [ 18 => 0.5 A S" 1.3 i .3 1.3
Saturation Voltage '8'" 5 A VCE(slt) 15' 3.S 3.5 3S
.. Common· Emitter ,Small,Slgnal,

Shorl·Circuil, Forward-Current hfe 25 2S
Transfer RatiO If .. I kHl)
Thermal Resistance: aOI 4681
JunClion·to-case R flJC un 1.1:>7

"CIW COU.ECTOR CURRENT O:Cl-A
Junction·lo-amblent 70 70
Fig, 3 - Typical gain-bandwidth product as a
·In accordance with JEDEC reglstratloll data format IJS·6 RDF-21. b CAUTION: Sustamm,lIol'lIfJIN VCEO(SU$J. V CERfsus). alia VCE~f$US) function of collector current for all types_·
• Pulsed; pulse duration" JOO ,",S. duty factor .~ I.B,'ll- MUST NOT IH mHsured 011 II CUfWI trae",. (&" FiS. )
• For p-n-p devices, voltage and current values are negeti\l6,
• Fer p-n·p deVIces, veltage and current values are negative.
___________________________________~----------------------------------------------------------233
POWERTRANSISTORS ___________________________________________________________________________
2N6486-2N6491
.
,110'
2 ~:~E.RUCII·-::::SE 10PERAi-:ON ~
CONTINUOUS r--
-u.~~
~ • 0~1-~
t;; '" "'il''' . 1\
~ 2 *FOR liNGLE l'o+,-", ~"I\
~
...
U
~ I
NONRfPETITIVE
PUL.SE
I \
1\
~
..I
8
of-I .. l +~*v "N.'.~\S~ ~
4~ VCED MAlt. _ 40 V (2NU8l)
+60 v 12N64871
l-- VeEoMAX .• -60V 12NI4901 b
0,,2
.
VCEO MAX,·
4
~:~ ~ \~~~~~~~
6 e 2
t-
40 60 80 100
UCI-2Uoe
.
It
Fig. 5· Maximum operating areas for all types. •
161 1000, COLLECTOA-TO-EMITTER VOLTAGE (VCE)'4~
f • CASE TEMPERATURE (TcIOI25"C

2 •
5
~
.1 · --r<-;' '~
·
ffi
~
100
of--- f - -
':1: . ~
K I""
92CS-22805
I ·· l'... r-.
Fig. 4 - Maximum operating areas for all types.•
g
I
0.1
, . , . 1. . .~.
I
COLLECTOR CURRENT (1CI-A
0
10
Fig. 6 - Typical de beta characteristics for

2N6486, 2N6487, and 2N6488.
COLLECTOR-lO-EMITTER VOLTAGE (VCE)a4V I 5 CASE TEMPER TUR TC 02
"
i
8
..."
I.
I" 100
!
..
2.'
I.' 2.' 2.' 7.5 10 12.S 15 I~ to

BASE-la-EMITTER VOLTAGE (VeEI-v
COLL..ECTOR-TO-EMITTER VOLTAGE IVeEI-V
COLLECTOR CURAEMTlIc)-A
Fig. 7· Typical transfer characteristics for Fig. 8 - Typical output characteristics for Fig. 9· Typical saturated switching
all types.· all types.· characteristics for 2N6486,
2N6487, and 2N6488.
o
o I
2 "68 2 "68
-0.01 -0.1 -I -10 -100
COllECTOR CURRENT(ICI-A C()j..i.:ECTOR CURRaNT 11CI-A
COLLECTOR CURRENT trCI-A
Fig. 11 . Typical saturated switching Fig. 12 - Typical collector-to-emittersatur-

Fig. 10- Typical dc beta characteristics characteristics for 2N6489, ation-voltage characteristics for
for 2N6489, 2N6490, 2N6491. 2N6490, and 2N6491. all types.
• For p-n-p devIces, voltage and current values are negative.
234 _____________________________________________________________
POWER TRANSISTORS
2N6510-2N6514
High-Voltage, High-Current, Silicon N-P-N Power Switching
Transistors . Features:
• Fast switching speed
• Epitaxial pi-nu construction
For Switching Applications in Industrial • Hermetic steel package-JEDEC TO-3
Commercial and Military Equipment • Maximum--safe.are8-of~peration curves
• Thermal-cycling rating chart
The RCA·2N6510, ·2N6511, ·2N6512, ·2N6513, and ·2N6514- These devices are hermetically sealed in a steel JEDEC TO·3
are epitaxial silicon n-p-n power transistors with pi·nu con- package. They differ from each other in breakdown-voltage TERMINAL DESIGNATIONS
struction. They are especially designed for use in electronic ratings, leakage, and beta characteristics.
ignition circuits and other applications requiring high-voltage,
-Formerlv RCA Dell. Nos. TA8847D. TA8847A, TAB847B, TAB847C.
high-energy. and faSHwitching-speed capability. and TA8847E, respectivelv.

2N6510 2N6511 2N6612 2N6513 2N6614
·COLLECTOR-TO·BASE VOLTAGE V CBO 250 300 360 400 360 V
Witn external base·ta-emitter resistance RBE ,. SO n .....••... VCERbus) 250 300 360 400 350 V
With base open •. ......... ,VCEO(sus) 200 250 300 360 300 V
·EMITTER·TO-BASE VOLTAGE .....••..•... V EBO 6 6 6 6 6 V
·CONTINUOUS COLLECTOR CURRENT ••.•••.
'c
'.
7 7 A
·CONTINUOUS BASE CURRENT ...•. 3 3 A JEDEC TO-3
-EMITTER CURRENT ...• 10 10 10 10 10 A
'E
-TRANSISTOR DISSIPATION: PT
At case temperatures up to :;!SoC ••. 120 120 120 120 120 W
At case temperatures above 25°C ..... - - - See Figs. 1 and 2 . - - _
·TEMPERATURE RANGE: ,.0
-86 to +200 _ _ _ _
Stora!!'! and Operating Wunctionl ..... ·c
·PIN TEMPERATURE (During Soldering):
At distances> 1/32 in. (O.B mm) from seating plane for 10 I max. 230 Oe
·'n ar::eor~anc. with JEDEC ragittratlon data format JC-25 ADF·1.
Z5 :10 7S 100 125 150 175 200

CASE TEMPERATURE ITcl- '"C
Fig. 2· Derating curve for all types.
10 '00
.I
'0
!:!
I-
...a:
Z
a:
::>
<>
a:
~ NUMBER OF TH£RMAl CYCLES
...
<>
.J
'2CS-2!1023
.J Fig. 3· Thermal·cycling rating chart

0
<> for all types.
~
~
=•
. 100
COlLECTOR-TO-EMITTER .... OlTAGE tVCE'·' v
.5 ·,
0.1
I I 12S·C
0
I 1"·'1 11
"
--- '"
~
ITE~P~RE ITCl--40*C
I cAsE
b..~
···
10
t;
!
i~ ,
Fig. 1 • Maximum operating areas for all types. g I
0.01 2 4 (; a O. 1 4
COL.LECTOR CURRENT fICl-A
6 II, . .. 10
Fig. 4· Typical de beta characteristic for

all types.
___________________________________________________________ 235
2N6510-2N6514
ELECTRICAL CHARACTERISTICS. Case Temperature ITc) - 2I1'c Un"" Otherwi.. Specifitld
VOLTAGE CURREN 2N6512
CHARACTERISTIC SYMBOL 2N6513 UNITS
Vd. Ad. 2N6514
VeE VaE Ie IB Min. TyPo Max. Min. Typ. Max.
With ba.. open
250 - - 5 - - -
leEO 300 - - - - - 5
mA
0
With base-emitter 350 -1.5 -- -
-
5 - - -
junction reverse biased
ICEV
400 -1.5 - - - 5
mA
0
With base-emitter
junction reverse biased,
350 -1.5 - - 10 - - -
TC= lCOOC
400 -1.5 - - - - - 10 10 100 1000
COLLECTOR·TQ-EMITTER VOLTAGE IVCEI-V
0
Emitter-Cutoff Current lEBO -6 - - 3 - - 3 mA
Collector-ta-Emitter Fig. 5· Maximum operating areas for
Sustaining Voltage: all types at 2lfJCand 1oiPC.
0
With base open VCEO(sus) 0.2 aJ; - - 350b - - V
emitter resistance: VCER('u,! 0.2 3501> - - 4001> - -
RBE=50U c "
0
Emitter-to-Base Voltage: I 120S
IE =3mA VEBO 6 - - 6 - - V
8
DC Forward-Current
Transfer Ratio:
hFE
2N6512.2N6513 3 4" 10 - 50 10 - 50
2N6514 3 5" 10 - 50 - - -
0
Base-ta-Emitter
Saturation Voltage:
2N6512.2N6513
VBE(s",!
4" O.B - - 1,7 - - 1.7
V
..
2N6514 5" 1 - - 1,7 - - - o I 3 4
0
Collector-ta-Emitter COLLECTOR-TO-EMITTER SATURATION 'IOlTAGE [VCE (101,1] - v
Saturation Voltage:
2N6512.2N6513 VCE('s,! 4s 0.8 - - 1.5 - - 1,5 V Fig. 6· Typical collector·to-emitter satur·
2N6514 5 1 - - 1,5 - - - ation·voltage characteristics for
All types 7 3 - 1,5 2.5 - 1.5 2.5
0 alltl'pes.
Output Capacitance:
VCB = 10 V. f = 1 MHz Cobo 100 - 200 100 - 200 pF
0
Magnitude of Common
Emitter. Small·Signal
Short-Circuit, Forward·
Current Transfer Ratio:
Ihfel 10· 1 3 - 9 3 - 9 MHz
f· I MHz
0
Forward-Bias, Second-
Breakdown Collector
I Sib
38 3.16 - - 3,16 - - A
Current: 200 0.1 - - 0,1 - -
t =.1 s nQnregetitivQ _.
0
Switching Time: c
(VCC = 200 V. IBI = 182!:
Delay Time:
2N6512.2N6513 4 0.8 - 0.1 0.2 - 0.1 0.2
1A8E-1O-EMITTa '«ILTAIE (VeE. - y
2N6514 'd 5 1 - 0.1 0.2 - - - UCS-ttoll'
Rise Time:
2N6612.2N6513 4 0.8 - 0,7 1.5 - 0.7 1.5
2N6514 " 5 1 - 0,7 1.5 - - - J.I5
all types.
Storage Time:
2N6512.2N6513
Is
4 0.8 - 3 5 - 3 5
2N6514 6 I - 3 5 -' - -
Fall Time:
2N6512.2N6513 4 0.8 - 0.5 1.5 - 0.6 1.5
2N6514 'f 5 1 - 0.5 1.5 - - -
Junction-to-Case R8JC 20 5 - - 1.46 - - 1.46 °C/W
-.
• Minimum and maximum wlues and test eonditions b CAUTION: ThesustainingvoltagesVCEOhusJ andVCERlsus)
In accordance wittl JEDEC reglmation data format JC-26 RDF·'. MUST NOT be measured on a curve trol!cer. .
a Pwlld: pulse duration" 300 1'1, duty factor .so;: 2%. C See Fi., 10and '"
CC1LLECTOIt-TO-EMlna '«L1III. tVcr:l - Y

tl.u~n
Fig. 8· Typical output characteristics for

all types.
236 ______________________________________________________________________________________________
POWER TRANSISTORS
2N6510-2N6514
ELECTRICAL CHARACTERISTICS, eare TemperatJJre ITC) a 25"C Un"" Otherwi", 5ptK:ified
CHARACTERISTIC SYM80L
TEST CONDITIONS
VOLTAGE CURRENT
Vdc Adc
2N6510
LIMITS
2N6511 UNITS
. ,.
~12.a
VCE IC 18 Min. Typ. Max. Min. Typ. MIX.
Collector-Cutoff Current: 150
V8E
ia 10
.
ICEO rnA
With bast open 200 5" ~ 7.'
With base-emitter 250 -1.5
~
junction reverse biased 300 -1.5
ICEV rnA !!
With base-emitter 2.'
250 -1.5 10
junction reverse biased.
300 -1.5 10
TC = l000 C
Emitter-Cutoff Current lEBO. -6 3 rnA BAIl-fo-EMlTTER SATUMTION YOLTME [v.c.4 - v
Sustaining Voltage: Fig. 9 - Typical base-to-emitter saturetion-
With base open VCEO(·u.1 !l!2 200b 250 b voltage characteristics for all tyPflS-
V
emitter resistance: VCER(,u.1 0.2 250 b 300b
RBE = 50n
COLL!CTOR-SIJIIJIl.'f"WM.TA8I: IVcc.· ZOO Y
PULSE DUMnQN l e".
E ,j
o i DUTY CYCLE s ."-
Emitter-ta-Base Voltage: . 1.,.·ru-r.c/.
IE =3rnA VEBO V
to .•
_......
DC Forward-Current 3 3" 10 50 I
Transfer Ratio hFE 7,I
3 4" 10 50 W0.7
· Base-ta-Emitter
~
~fo'
, 1.t
Saturation Voltage VBE(,··I
3"
4'
0.6
O.S
1.7
1.7
V I o. :l!.f
L ....
ruffirl!
VCEIs.ti
3"
4"
0.6
O.S
1.5
1.5 V
i0
0 • " ljj:jI:
Saturation Voltage
Output Capacitance:
7" 3 1.5 2.5 1.5 2.5 0.0
TO NORMALIZE FOR 2N&aIO AHD' 2NUl4 UIE
TYPICAL. VM.UES SHOWN UNDER ELECTRICI.L
.";".~TERI"~S .~ THE TEST ~'t':'ff';; ~'TI~'r'r:,
d
. I
VCS = 10V,f= 1 MHz Cobo 100 200 100 200 pF

,
· Magnitude of Cqmmon
Emitter, Small-Signal
COLLECTOR CURRENT ttcl-A
Short-Circuit, Forward-
Current Transfer Ratio:
I hfel 10 9 3 MHz Fig, 10 - Typical rise- and fall-time charac-
teristics for all types_
f-l MHz
Forward-Bias, Second- COLL.£CTOR-SUPflt.Y VOLTAGE CVccl82qO Y
~Lfc~.f2Sid
.
Breakdown Collector 38 3.16 3.16
ISlb A I.,·-~It·rc's
Current: 200 0.1 0.1
t'* 1 S, nonrepetitive \
Switching Time: c I
(VCC = 200 V, IBI = IB21: ~ 4
fa
3 0.6 0.1 0.2 I
Delay Time 'd 4 O.S 0.1 0.2 ~ :5
3 0.6 0.7 1.5 iO

2
Rise Time
" 4 O.S 0.7 1.5
/lS - I. _
0.6 TO NORMAUZt FOR 2NII5IO AND 2NUI4 UK
Storage Tim~
" 4 O.S 3 TYPICAL VALUES SHOWN UNDat ELECTRICAL
CtfARACTERlmC! AT THE TEST .CURRENT SP!C11'EO
Fall Time 'f

3
4
0.6
O.S
0.5 1.5
0.5' 1.5
.0 0
• •
COLLECTOR CUllRENT tlc1-'"
,aCSMUOl"
Junction-to-Case 20 1.46 1.46 °crw Fig. 11 - Typical storage-time characteristic
RsJC
• Minimum and maximum values and test conditions b CAUTION: TheaJSlainingvoltegesVCEOlsusl andVCERIlUsl
for all types_
in accordance with JEDEC registration data format JC-25 RDF-l. MUST NOT be measured on a curve tracer_ These INstaining
a Pulsed; pulse duration = 300~. duty factor " 2%. voltagaS should be measured by meem: of the test circuit shown
in Fig. 11.
C See Figs. 8-10.
__________________________________________________________________ 231
POWER TRANSISTORS
2N6530-2N6533
Features:
a-Ampere N-P-N Darlington Power Transistors • Operate from Ie with-
out predriver
8Q, 100, 120 Volts, 60 Watts Gain of 1000 at 3 A (2N6533) • Low leakage at high
Gain of 1000 at 5 A (2N6530, 2N6532) Gain of 500 at 3 A (2N6531) temperature
• High reverse second-
breakdown capability
The RCA-2N6530, 2N6531, 2N6532, and
2N6533- are monolithic n-p-n silicon Dar-
lington transistors designed for power appli- •
,---------,
I I
Applications:
• Power switching
cations at low and medium frequencies, The I
double epitaxial construction of these de- I • Hammer drivers
I I
vices provides good forward and reverse I • Series and shunt regulators
I
second-breakdown characteristics. Their high IL _.12k'"
____ • 1000
_ _ _ _ ...J
I • Audio amplifiers
gain allows them to be driven directly from
integrated circuiU.
- Formerly RCA Dev. Nos. TA8904C, TA8904D,

TA8904B, and TA8904A, respectively. Fig. 7 • Schematic diagram for all types.
BOTTOM VIEW
MAXIMUM RATINGS, Absolute-Maximum Values: 92CS-21519
2N6530 2N6531 2N6532 2N6533

JEDEC T0-220AB
·V CBO . 80 100 100 120 V
VCER(susl
RBE = 100 11 80 100 100 120 V
VCEO(susl 80 100 100 120 V
'VCEV(susl
VBE = -1.5 V 80 100 100 120 V
·VEBO 5 5 5 5 V
'I C 8 8 8 8 A
'CM' 15 15 15 15 A
"B 0.25 0.25 0.25 0.25 A
'PT
Up to 25 0 C 66 66 66 66 W
Above 25 o C. See Fig. 2
'TJ , Tstg -66 to +150 °c
'T L
At distances ;;. 1/8 in. (3.17 mml
from case for 10 s max. 235 °c
• 'n accordance with JEDEC registration data format J5-S, RDF-4 ..
•I ···
i ' ~~.
;t-
f-
~
u
~ .~
.=f ·· "
I.
~
~. .
6
w
· ~I\~ I \.
I\'i.,~
i! "\ 'cJ•
,,-
'0'0
~
. ..
'0
25 50 75 100 Its 150 115 200

I
10' 10"
, 8 10'
.. 58
I
Z ....
10
CASE TEMPERATURE 1Te)--C COI..I..ECTOR CURRENT Ite) _A
92CS-20198
Fig. 2 - Dissipation derating curve for Fig. 3 - Thermal-cycling rating chart Fig. 4 - Typical de beta characteristics
all types. for all types. for all types.
238
POWER TRANSISTORS
2N6530-2N6533
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCJ = 2SOC unless COllECTOR CURR£NT (Ie J -I A
COLLECTOR·TO-EMITTER VOlTAGE (VeE) o!j v
otherwise specified CASE TEMPERATURE (TC)o25"C
~ '~~=+~~-+--+-~~1--+~H
i""'~ffiij§"'~fl~
CHARACTERISTIC VOLTAGE CURRENT !i .' ~
SYMBOL Vde
VCE VBE IC
,de'
'B Min.
2N6630
Max. Min.
2N6631
Max.
UNITS
i 'r+~'H+r+-Mrrr~~
~~ •. -t--
ao 0 - 1 - - • :-r---=-
\
'CEO
'CEV
100
ao
100
-1.5
-1.5
0 -
-
-
-
0.5
-
-
-
-
1
-
0.5
mA
10
0.01
... 0.'
FREQUENCY (t). MHZ
.0
TC = 125°C
ao -1.5 - 5 - - Fig. 5· Typical small'signal current gain
100 -1.5 - - - 5 for all types.
'EBO -5 0 - 5 - 5 mA
3 58 1,000 10,000 - - COLLECTOR-TO-EIiIIITTERVOLTAGE (VeE 1·3V
hFE 3
3
38
a8
-
100
-
5,000
500
100
10,000
5.000
"
VCEO(sus) 0.2 0 BOb - 100b - 1 f
VCER(sus)
0.2 aob - 100b - V
~
I
10
l
RBE = lOOn
VCEV(sus) -1.5 0.2 aob - 100b -
3. 58 - 2.B - -
VBE 3
3
38
B8
-
-
-
4.5*
-
-
2.B
4.5*
V
.
."SE-TO..£IIIITTER VOLTAGII VIE'-V
38 0.006 - - - 3
VCE(S8t) 58 . 0.01 - 2 - - V Fig. 6· Typical input characteristics for
B8 O.OB - 3* - 3* all types.
VF
sa - - - 4
V
sa - 5 - -
hfe
f = 1 kHz
5 1 1,000 - 1,000 -
Ihfel
f = 1 MHz
5 1 20 - 20 -
Cobo
VCB=10V - 200 - 200 pF
f = 1 MHz
'Slb
t = 0.5 s,
24 2.7 - 2.7 - A
nonrep. COl,LKTOR-TO-EMITTEA WllME (VCEI-V
ESlb Fig. 7· Typical output characteristics for

L= 12 mH -1.5 4.5 120 - 120 - mJ all types.
RBE = 100 n
ROJC - 1.92 - 1.92 oCIW
* In accordance with JEDEC regist~ation data format J&-a, RDF-4.

8 Pulsed, pulse duration = 300/.ls. duty factor" 2%.
b CAUTION: Sustaining voltages VCEO(sus). VCER('u,), and VCEV(sus) MUST NOTbo ma.sured on
a curve tracer.
_____________________________________________________________ 239
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _......_ _ _ _ _ _ _ _ _ _ _ __
2N6530-2N6533
ELECTRICAL CHARACTERISTICS. At Case Temperature fTC) = 2SOC unless
otherwise specified
2N6632 2N6633· UNITS
SYMBOL Vdc Adc
ICEO
120 0 - - - 1
100 0 - 1 - -
ICEV
120 -1.5 - - - 0.5
mA
100 -1.5 - 0.5 - -
TC = 125°C
120 -1.5 - - - 5 Fig. 8- Typical saturation characteristics
100 -1.5 - 5 - - for a/l types_
lEBO -5 0 - 5 - 5 mA
3 3a - - 1,000 10,000 COLL!CTOIII-TO-EMITTER VOt.TAGE IVC£)'3V II.
hFE 3 5a 1,000 10,000 - - "D
3 8a 100 5,000 100 5,000 1 'U
~
VCEO(sus) 0.2 0 100b - 120b - 10. Yo
I
lI~~··
VCER(sus)
0.2 100b - 120b - V 10
I
RBE = 100 n
0..
VCEV(sus) -1.5 0.2 100b - 120b - ~
3 3a -
-
- -- 2.8
-
Z ••
VBE 3 5a 2.8 V , , •
3 8a - 4.5' - 4.5' IASE·TO-EMlTTlIt YOLTAIE 1Var,l-V
3a 0.006 - - - 2
VCE(sat) Sa 0.01 - 2 -- - V Fig. 9 - Typical transfer characteristics
for all types.
8a 0.08 - 3' 3"
VF
f:P - - - 4
V
sa - - -
-
5
• COU.£.CTOA S\Wf'1,..'t 'IOLTMI£ tVCCI~2.0V
. ,....-
J8 ,··'8 2- IC';00
hfe
- -
. b-
5 1 1,000 1.000
f = 1 kHz
"
,V
Ihfel
f = 1 MHz
5 1 20 - 20 -
,/ ......... ~
--
Cobo ..... k I
VCB = 10 V - 200 - 200 pF r-.,.'.
f = 1 MHz "
,Id f-+
" ISlb , ,
t = 0.5 s,
24 2.7· - 2.7 - A
! 4
COla-ECTOR OJRRENTIICI-A
5 6 7 8 , 10
nonrep. Fig. 10 - Typical saturated Switching-time

characteristics for a/l types.
ES/b
L = 12 mH -1.5 4.5 120 - 120 - mJ
RBE = lOOn
ROJC - 1.92 - 1.92 °CIW
• In accordance with JEDEC registration data format JS-6, RDF-4.

a Pulsed. pulse duration = 300 jlS, duty factor " 2%.
b CAUTION: Sustaining voltages VCEO(sus), VCER(sus), and VCEV(sus) MUST NOT be measured
on a curve tracer.
240
POWER TRANSISTORS
2N6530-2N6533
•
100 8 CASE TEMPERATURE (Te )=25°C
~g~v~~C~~~~:EIND~~~:~Rk~~~~~ LV
II
6
,,'ltlrHi,:1il
W!n~ji:rr
J-If
,ERII,O .*
2 ~P~LSE~:1,
<t
I 10
H"pi'll "
...u
!Z...
a:
a:
:::>
u
a: 2 "
o
I-
tl I,.,.,. FOR SINGLE
-' NONREPETITIVE
o-' PIJL~;E_
u
.. '
" m
'" I,,,,,'
2 fC-'-'---,- V CEO (MAXJ= 80 V (2N6530) I
E= VCEO (MAX,) '100 V 12N6531, "'~~'
1_ i+::~ VCEO IMAX,)=120V 12N6533
0.1 Ii' ',tT! ,I", ,," ,,'II II,,,,,,,,
I 2 4 6 8 I~ 2 4 6 80 l dd 20
COLLECTOR-TO-EMITTER VOLTAGE I VCE)-V 92CS-24603RI
Fig. 11 . Maximum operating areas for all types at case temperature of 2ff'C.
<t
I
.. "::.;
V CEO (MAXJ=80 V (2N6530)

V CEO (MAX,) ·100 V (2N6531, 2N6532)
VCEO (MAX,)'120 V (2N6533)
4 6 8 4
COLLECTOR-TO-EMITTER VOLTAGE I VCE)-V 92CS-24604RI
Fig. 12· Maximum operating areas for all types at case temperature of 10d"C.
__________________________________________________________________ 241
POWERTRANSISTORS.______________________________________________________________________________
2N6534-2N6537
a-Ampere N-P-N Darlington Power Transistors
SO, 100, 120 Volts, 36 Watts Gain of 1000 at 3 A (2N6537) Features:
Gain of 1000 at 5 A (2N6534, 2N6536) Gain of 500 at 3 A (2N6535) - Operate from Ie without predriver
- Low leakage at high temperature
The RCA·2N6634, 2N6636, 2N6636, and - High rev.erse second-breakdown capability
2N6637- are monolithic n·p·n silicon Dar· Applications.'
lington transistors designed for power appli·
cati0"!5 at low and medium frequencies.
,------------,
I I
- Po_ SWitching - Audio amplifiers
I I - Hamnier drivers - Series and shunt regulators
The double epitaxial construction of these
I I
devices provides good forward and reverse·
second·breakdown characteristics. Their high : I
I I
gain allows them to be driven directly from 1.2~A
IL _.. _ ___ _ _ _ _ ....lI
.. 1000 TERMINAL DESIGNATIONS
integrated circuits.
c
.~
TO·66 hermetic packages.
- Formerly RCA Dev. Nos. TA8941C, TA8941D, FIg. 1· Schematic diagram for all types.
TA8941 B, and TA8941 A, respectively.
laCI-I","
JEDEC T0-86
2N6634 2N6636 2N6636 2N6637
'V CBO ...........•..•....••.••• 80 100 100 120 V
VCER(su.)
RSE = loon ................... . 80 100 100 120 V
VCEO(susl ...................... . 80 100 100 120 V
·VCEV(~u'l
VSE =-1.5 V ••••••••.•.••..••..• 80 100 100 120 V
5 5 5 5 V
8 8 8 8 A
15 15 15 15 A
·I a ........................ . 0.25 0.25 0.25 0.25 A
·PT
Up to 25°C .....•...........••.. 36 36 36 36 W
Above 25°C ...................... - - - - - - - See Fig. 2 - - - - - - - -
•..••......•••...•...••..• - - - - - - -66 to +2OQ - - - - - - - °c
- - - - - - -65 to +150 - - - - - - - °c
At distances ;;'118 in. (3.17 mm)
from case for 10 s max ........... - - - - - - - - 235 - - - - - - - - - - - - °c
• In accordance with JEDEC registration data format JS·6, RDF-4.
··
000
~~: COLLECTOR~TO·EMllTEA VOlTAGE (VCE)-:5 V r---t-
!2 "
•I I
~
· ~ ~ .= ..•
-=
~
2
10" 1
~ CASE-TEMPERATURE
CJf'
"
~
~ CHANGE 16TC )-150·C
~
'k i
\ ! / 1
2
~ \."'~.~
'r-- ~ 10".
-~(\(,
i r- i ~ ,\. "- I :,7.>"'i I I
_ >,$f-
1\
.'c.2£!r'. ,C .!'riC "". . . .. . .. 1 . .,
;! 50 ~
0
, , 00' 0' I I 1 , ,
ze eo 71 100 115 150 1115 200
00' 10
o •10• • 0
10·
CAl! tEM,.ERATUREtTcl-ec: 0.0 000
NUMBER 0' THERMAL CYCLES o
COLLECTOR "
CURRENT IICI -A
Fig. 2· Dissipation derating curve Fig. 3· Thermal-cycllng rating chart Fig. 4· Typical de beta characteristics
for all types. for all types. for all types.
242 _________________________________________________________________
POWER TRANSISTORS
2N6534-2N6537
COL.LEC~
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 2fPC unless CURRENT tIeI-' A
otherwise specified

CHARACTERISTIC VOLTAGE CURRENT 2N6&34 2N6535 UNITS
SYMBOL Vde de
80 0 - 1 - - \
'CEO
'CEV
100
80 -1.5
0 -
-
-
0.5
-
-
1
- rnA
'0
0.01
... n,
FREQUENCY Ill-MHZ
I\.
Z 4.8
10
100 -1.5 - - - 0.5

.~
Fig. 5 - Tvpical small-signal current
TC = 150°C
80 -1.5 - 5 - - gain for all types.
100 -1.5 - - - 5
'ESO -5 0 - 5 - 5 rnA
3 5a 1,000 10,000 - -
hFE 3 3a - - 500 10,000
3 8a 100 5,000 100 5,000
VCEO(sus) 0.2 0 80 b - 100b -
VCER(sus)
0.2 , 80 b - 100b - V
RSE = lOOn
VCEV(sus) -1.5 0.2 80 b - l00b -
3 5a - 2.8 - -
VSE 3 3a - - - 2.8 V
3 8a - 4.5" - 4.5"
3a 0.006 - - - 3
VCE(sat) 5a 0.01 - 2 - - V Fig. 6 - Tvpical input characteristics
8a 0.08 - 3" - 3' for all types.
qa - - - 4
VF V
sa - 5 - -
hfe
f = 1 kHz
5 1 1,000 - 1,000 -
Ihf~1 5 1 20 - 20 -
f = 1 MHz
Cobo
VCS = 10 V - 200 - 200 pF
f = 1 MHz
'SIb 34 1.06 - 1.06 - A

t = 1 5,
nonrep. COLLECTOR -TO-EMITl'Dt 't'OLTAGl (VCEI-Y
ES/b Fig. 7 - Tvpical output characteristics

L = 12 rnH -1.5 4.5 120 - 120 - rnJ for all types.
RSE = lOon
ReJC - 3.5 - 3.5 °CIW
* In accordance with JEDEC registration data format JS-6. RDF-4.
a Pulsed, pulse duration = 300 IJS, duty factor :s;,;;; 2%.
b CAUTION: Sustaining voltages VCEO(sus), VCER"us), and VCEV(susl MUST NOT be measured on
a curve tracer.
______________________________________________________ ~243
POWERTRANSISTORS _____________________________________________________________________________
2N6534-2N6537
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCl = 25"C unless
otherwise specified
"FE""OOO
CHARACTERISTIC VOLTAGE CURRENT Te· lOO -C
2N6536 2N6537 UNITS
SYMBOL Vdc Adc
VCE VBE IC IB Min. Max. Min. Max. IOO,IOO-C
ICEO
120 0 - - - 1
100 0 - 1 - -
120 -1.5 - - - 0.5
rnA 4 6 8 10 12 14
ICEV 100 -1.5 - 0.5 - - COLLECTOR CURRENT I1CI-A
TC = 150°C
120 -1.5 - - - 5
Fig. 8· Typical saturation characteristics
100 -1.5 - 5 - - for all types.
lEBO -5 0 - 5 - 5 rnA
3 3a - - 1,000 10,000
hFE 3 Sa 1,000 10,000 - - COU£CTOR-TO-EMITTER VOUAGE I VeE '-3 v I- : !1'
3 Ba 100 5,000 100 5,000 15.
VCEO(sus) 0.2 0 100b - 120b -
VCER(sus)
0.2 100b - 120b - V
RBE = lOOn
VCEV(sUS) -1.5 0.2 100b - 120b -

3 3a - - - 2.S
VBE 3
3
5a
Sa
3a 0.006
-
-
-
2.S
4.5"
-
-
-
-
-
4.5"
2
V
. .
USE-TO-EMtTTER VOlTAGE (YBE'-V
,
VCE(sat) 5a 0.01 - 2 - - V
Sa O.OS - 3' - 3" Fig. 9· Typical transfer characteristics
for all types.
VF
sa - - - 4
V
sa - 5 - -
hfe
f = 1 kHz
5 1 1,000 - 1,000 - 5 COLLECTOR SUPPLY VOLTAGE (VCC)2 20 V
181"·IB2=IC/5oo
Ihfel -I-" .......

f = 1 MHz
5 1 20 - 20 - 4
'f
/'
Cobo ,V
- - 200 pF .......... ~
-
VCB=10V 200 z/
f = 1 MHz <"
IS/b . ............ r-..:.
t = 1 s,
34 1.06 - 1.06 - A ..~
nonrep.
0
Z , 4
• • • 7 • K>
COLL.ECTOR CURRENTUcl-A
ES/b
L= 12 rnH -1.5 4.5 120 - 120 - rnJ Fig. 10· Typical saturated switching-time
RBE = lOOn characteristics for all types.
ROJC - 3.5 - 3.5 °CIW
.. In accordance with JE DEC registration data format JS·6, RDF·4.
a Pulsed, pulse duration:::: 300 IlS. duty factor ::s;; 2%.
b CAUTION: Sustaining voltages VCEO(sus), VCER(sus). and VCEV(sus) MUST NOT be measured
on a curve tracer.
244 __________ ~ _________________________________________________

POWER TRANSISTORS
2N6534-2N6537
CASE TEMPERATURE (TC)' 25°C
WITH INCREASE IN TEMPERATURE)
...z
W
It:
It:
:>
C,)
It:
~
..J
..J
o
C,)
4 6 8
10 100 1000
COLLECTOR-TO-EMITTER VOLTAGE (VCE) -V 92CS-24606RI
Fig. 11 . Maximum operating areas for all types at case temperature of 25°C.
...
z
W
0:
0:
:>
C,)
0:
~
W
..J
..J
oC,)
68 2 468 2
92CS-24608R I
10 100
COLlECTOR-TO-EMITTER VOLTAGE (VCE)-V 0
Fig. 12· Maximum operating areas for all types at case temperature of 100 C.
__________________________________________________________________ 245
2N6542. 2N6544. 2N6546

3-, 5-, and 10-A Power- Switching Transistors Features:
• 100% High Temperature Tested for
High-Voltage N-P-N Types for Off- Line Power Supplies and Other High- 100° C Para.:neters
Voltage Switching Applications • Fast Switching Speed
• High Voltage Rating:
The RCA-2N6542, 2N6544, and 2N6546 tested for parameters that are eassential to veE X =350 V
series of silicon n-p-n power transistors the design to high-power switching circuits. • Low veE (sat) at Ie =3-, 5-, and 10-A
feature high-voltage capability, fast switching Switching times, including inductive turn-off • Steel Hermetic TO-204MA Package
speeds, and low saturation voltages, together time, and ~aturation voltages are characterized
with high safe-operating area (SOA) ratings. at 100°C; as well as at 25°C, to provide infor- Applications:
They are specially designed for off-line mation necessary for worst-case design. • Off-Line Power Supplies
power supplies, converter circuits and pulse- The 2N6542, 2N6544 and 2N6546 tran- • High Voltage Inverters
width-modulated regulators. These high·volt- sistors are supplied in steel JEDEC TO-204M A • Switching Regulators
age, high-speed transistors are lOO·per-cent hermetic packages.
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6542 2N6544 2N6546 TERMINAL DESIGNATIONS

• vCSO' 650 V
* v CEV
VSE = -1.5 V 650 V
• VCEX(Clamped)
V SE =-1.5V 350 V
* V CEO ' 300 V
* V ESO ' 9 V
IC(sat). 3 5 10 A
* IC' 5 8 15 A
JEDEC TO-204MA
ICM . 10 16 30 A
8 10 A
• IS'
* PT 0
T C up to 25 oC . . : . 100 125 175 W
T C above 25 C, derate linearly 0.57 0.714 1 w/oe
* T stg ' T J . . -65 to 200 °c
• TL
At distance ;;;'1/8 in. (3.17 mm) from seating
plane for 5 5 max. . 275 °c
CASE TEMPERATURE CTC1--C .tel-I'."

Fig. 2 - Dissipation and ISIb derating curves
for all types.
.
I
r 4
i
COLLECTOR-TO-EMITl£R VOLTAGEIVCEI- V
4 6 'IO~
92CM-3OSS2
NUM8ER OF THERMAL CYCLES
Fig. 1 - Maximum operating areas for type Fig. 3 - Thermal-cycling chart for
2N6542 ITC = 25°C). type 2N6542.
246
2N6542, 2N6544, 2N6546

100
ELECTRICAL CHARACTERISTICS
VOLTAGE CURRENT 2N6542 2N6544 2N6546
CHARACTERISTIC UniU
Vdc Adc
vCEl v 8E IC I 18 I
Min·IMlx. Min. MIx. MinJ MIx.
TC= 25"C
• ICEV 6S0 -l.S - O.S - O.S - 1
rnA
• lEBO -9 0 - 1 - 1 - 1
• VCEO(sus)b 0.11 300 - 300 - 300 - V

.. • '104 I " . '10' I
NUMB£R OF THERMAL. CYCLES
" . '10' I;
t2CS-2!10Z;S
"
• hFE 2 31 7 3S - - - - Fig. 4 - Thermsl-cycling chert for

2 1.S1 12 60 - - - .- type 2N6544.
3 SI - - 7 3S - -
3
2
2.S1
101
-
-
-
-
12
- -
60 -
6
-
30
•, ··
- - - -
· ,.
2 SI 12 60
~
VBE(sat) 31 0.6 - 1.4 - - - - !
sa 1 -
-
-
-
-
-
1.6 -
-
- i
~
100
:~l ~S~.
,,""...
• VCE(sat)
101
31
2
0.6 - 1
-
- - -
1.6
- V
~
;
. 1\ I\~
... ~ ~,
1"'~
SI 1 - S - 1.S - - ~ I
81 - - - - -
't
I~ ~
. . ..""
2 S
- - - - - I\,• I, '" r--
• t = 15 100
101
1S1
2
3 -
0.2
-
-
-
0.2
-
-
-
0.2
1.S
-
S
A
· • '10'" I
NUMBER OF THERMAL. CYCLES

I
"tel-It"'"
'SIb
Fig. 5 - Thermal-cycle rating chert for
• fT f = 1 MHz 10 0.2 6 28 - - - - type 2N6546. .
10 0.3 - - 6 28 - - MHz
10 O.S - - - - 6 28
>I<
Cobo f = 1 MHz 1ad SO 200 7S 300 12S SOO pF •
* tde 3 0.6 - O.OS - - - - ; 1
iiI'·
S 1 - - - O.OS - - ;. j,..o-
10 2 - - - - - O.OS lL
V
* tre 3
S
0.6
1
-
-
0.7
-
-
-
-
1
-
- - Ii
"II!
4
* tse
10
3
2
0.6 -
- -
4
-
-
-
-
-
- -
1 ps
I ·V V
S
10
1
2
-
-
-
-
-
- -
4 -
-
-
4
0.1
0.001
. ... . ... . ... . ...
0.01 0.1 10
* tfe 3 0.6 - 0.8 - - - - Fig.

PULSE nTH (tp)-I
6 - Typical thsrmsl-rflSponsf} characteristic

S 1 - - - 1 - - for types 2N6542 and 2N6544.
10 2 - - - - - 0.7
~ 'Ue
I:
I':
~
·
I: ~ 0.1
",'-
I ·
•
· 0.01
I
0.001 • ... . 0.01 '" • '" • •

0.1
PULSE WIDTH Ctp. - . tlCS-IO.,
.. ..
Fig. 7 - TypiCIJI thermal·response cheracteristic for
type 2N6546.
______________________________________________________________________ 247
POWERTRANSISTORS __________________________________________________ ~------------~---------- ___
2N6542,2N6544,2N6546
r·. COLLECTOA-TO-EMtTT[R VOLTAGE (VeE)- 2V
--
CHARACTERISTIC
TEST CONDITIONS
VOLTAGE CURRENT
2N6542
LIMITS
2N6544 2N6546 Units

~
;::
~
E
.- , '"::Y.
C"E>~~l~
"
~ ....- - ~.>~ ~$"

Vdc Adc
Min. I Max. Minl Max. MinlMaiC t -"';:::"
VCEI V8E IC I 18
~
~
TC = 100°C ~ L,----
-
~o,c
"'t-a
~ 10 l"I.
* ICEV 6SO -1.5 - 2.5 - 2.5 - 4
mA ! .
• ~ ~
*
*
ICER RSE = son
VCEX(sus)b.c
650 - 3 - 3 - 5 ~
II
0.1
t
• .. I
COLLECTOR CURRENT (:tC)-A
, • .. 10
9tCS-50SSO
VCC= 20V 2.68 350 - - - - - Fig. 8- Typical de beta characteristics for
L=lBOItH, type 2N6542.
RC = 0.05n 4.5a - - 350 - - -
200 COLLECTOR- TO-EMITTER
Vclamp = Rated
VCEX sa - - - - 350 - .
2 VOLTAGE (VCE)-3V
V :100
Vclamp = Rated
VCEO -100V 58 200 - - - - - ~
··
I:!
Ii!
sa - - 200 - - - "'W4
Z~
~
- - ~e ~
~
158 - - - 200
~
I · J J J1J i'-- r\'
* VSE(sat) 38 0.6 - 1.4 - - - - I
CAS! TEMPERATURE ITel.-~
58 1 - - - 1.6 - -
loa 2 - - - - - 1.6 ~
· . . . . · ..
10
V II
* VCE(sat) 3a
5a
loa
0.6
1
2
-
-
-
-
-
2 -
-
-
-
2.5
-
-
-
-
-
-
2.5
· 0.1
Fig. 9 -
I
COLLECTOR CURRENT IIcJ-A
Typical de beta characteristics for
MCI-Inll
10
type 2N6544.
* tsf -5 3 0.6 - -
4 - - -
-5 5 1 - - - 4 - -
-5 10 2 - - - - - 5 jVVe COLLECTOR - TO -EMITTER VOL.TAGE (VeE) .. 3 V
* tff -5
-5
3
5
0.6
1
-
-
0.8 -
- -
-
0.9
-
-
-
-
Its
i · .r---~~
""~ J
* R9JC
-5 10 2 -
-
- -
1.75 -
-
1.4
-
-
1.5
1 °C/W I 2
I-- ZS-c
~~~~b.
1°0.
* In accorda"ce with JEDEC registration data. C VCC" 20 V, L = 180 jlH, RC = 0.05 n

Ia -4O-c
1'1'
~
c
C 10
o Pulsed: pulse duration = 300 jlS, duty factor';;; 2%.
b CAUTION: The sustaining voltage VCEOlsusl
d VC8 value
e ResiSliveload, Vce = 250 V, tp = 100 jlS, !Ii' ·, b
"'-
·,. · .•
and VCEXlsusl MUST NOT be measured on a
·
I B1 = -I B2 II
curve tracer. f Inductive loed, Vclamp = Rated VCEXlsusl, 2 2
10 100
181 = -lel 5 , L = 180 jlH, RC = 0.05 n, VCC = 20 V COL.LECTOR CURRENT (Icl-A 9'lCS-30H5
type 2N6546.
10 COLLECTOR CU'-lENT 'lei - A 10

COL. LECTOR CURRENT (IC)-A eICS-!H'''' COL.L.ECTOR CURRENT {IC)-A
Fig, 11 - TypiCIII cOllector-to-emitter saturation Fig, 13 - TypiCIII base-to-emitter saturation voltage
voltsge as II function of collector CUf- Fig. 12 - TYP;CIII collector-to-emitter saturation as a function of collector current for
rent for types 2N6542 and 2N6544. . voltage characteristics for type 2N6546. types 2N6542 and 2N6544.
248 ________________________________________________________________
POWER TRANSISTORS
2N6542, 2N6544, 2N6546

4 COLLECTOR -TO-EMITTER
VOLTAGE !VCE)-'V
J
10
COLLECTOR CURRENT (lei - A
Fig. 16 - Typical base-fa-emitter voltage as
a function of collector current for
tVpes 2N6542 and 2N6544.
-4 Is's Ie/!5
z
~>
~+ ~
~!
ffiJl
~-
~~I 1#
~~
~>
~
.
.
-40"C
12'5G
c
-~~.\oO'C
~"IU\\~rC'1
~I'
COI.LECTOR-TO-EMITTER VOLTAGEIVCE1-v 12CM-'O."
0.4
2 4 . .I 10
COLLECTOR CURRENT(IC)-A
2 4 .100
92CS-30376
Fig. 14 - Maximum operating areas (or type 2N6546 (TC = 25°CJ. Fig. 17 - Typical base-to-emitter saturation
voltage characteristics for type
2N6546.
I
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V 92C5-29981\

tvpes 2N6542 and 2N6544.
COI.LECTOR-TO-EMITTER VOLTAGE IVCE1- V 92CIlll-30531
Fig. 15 - Maximum operating i!reas for type COLLECTOR-TO-EMITTER VOLTAGE (VCE) - V

2N6544 (TC = 25° CJ. 92.CS-30374
type 2N6546.
249
POWERTRANSISTORS __________________~--------------------------------------------------------___
2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E

Silicon P-N-P Epitaxial-Base High-Power Transistors
Features:
Rugged Devices, Broadly Applicable
• High-dissipation capability
For Industrial and Commercial Use • Low saturation voltages
• Maximum safe-area-of-operation curves
The RCA-2N6609. MJ15004. RCA9116C. They differ in voltage ratings and in the .fT =2MHz
RCA9116D. and RCA9116E are ballasted currents at which the parameters are con- • High gain at high current
epitaxial-base silicon p-n-p transistors featur- trolled. All are supplied in the steel JEDEC
ing high gain at high current. They may be TO-204MA packages.
used as complements to the n-p-n types Applications:
RCA3773. MJ15003. RCA8638C, RCA
8638D. and RCA8638E. respectively. • Series and shunt regulators
MAXIMUM RATINGS, Absolute-Maximum Values: • Power-switching circuits
2N6609 MJ15004 RCA9116C RCA9116D RCA9116E
• vcso' -160 -140 -140 -120 -100 v • Solenoid drivers
VCExlsus)
VSE = -1.5 v; RSE = 100 n -160 v
VCERlsus)
RSE = 100 n. -lS0 -lS0 -lS0 -130 -110 V TERMINAL DESIGNATIONS
• VCEolsus) -140 -140 -140 -120 -100 V
* v ESO . -s V
•
•
•
IC'
IS .
PT
0 -20
-S
A
A
At T C ;;;>2SoC 150 250 200 200 200 W

At T C >2SoC Derate linearly 0.8S7 1.43- 1.14 wf'c
• Tstg • TJ -65 to 200 °c
• TL
At distance ;;;>1/32 in. 10.8 mm) from
seating plane for 105 max .. 265 230 °c
* 2N·type in accordance with JEDEC registration data format JS25RDF1, Issue 1. JEDEC TO-204MA
!l,
-0.01 2 4 6.\, I 2 4 6 8_ 1 2 4 6 tlo 2 4 6 !IOO
COLLECTOR CURRENT t ICI-A
Fig. 2 - Typical de beta characteristics as a function.

COLLECTOR~TO~£MITTER VOLTAGE(VcEI- v of collector current for aI/ types.
250 ____________________________________________________________________

ELECTRICAL CHARACTERISTICS. at Case Temperature (TC) ~ 25°C Unless Otherwise
Specified
VOLTAGE CUR·
CHARAC· Vdc RENT UNITS
TERISTIC Adc 2N6609 MJ15004
VCE VBE IC Min. Max. Min. Max.
ICBO -1608 - -4 - -
'" -1408 - -2 - -1
ICEX -140 1.5 - - - -0.1 COLLECTOR CURRENT (IC)-A
ICEX -140 1.5 - - - -2 Fig. 3 - Typical saturation voltage characteristics

TC ~ 150°C for all types.
* ICEV -140 1.5 - -2 - -

mA
* ICEV -140 1.5 - -10 - -
TC~150°C
ICED -140 - - - -0.25

IB= 0
* -120 - -10 - -
lEBO
* -7 - -5 - -
-5 - - - -0.1
* hFE -4 -8C 15 60 - -
* -4 -16c 5 - - -
-2 -5c - - 25 150
-2 -loe - - 10 -
Fig. 4 - Typical input characteristics for all types.
VCEX(sus)b 1.5 -0.2 -160 - - -
RBE= lOOn
VCER(sus)b
-0.2 -150 - -150 -
RBE": loon
• VCEO(sus)b -0.2 -140 - -140 -
VEBO 0 -7 - -5d -
IE=-l mA
-4 -8c - -2.2 - - V
VBE ~
-2 -5c - - - -2
VCE(sat)
* IB = -3.2A -16 c - -4 - -
* =-0.8A -8c - -1.4 - -
= -0.5A -5C - - - -1
Fig. 5- Typical transfer characteristics for all types.
ISlb -100' -1.5 - -1 -
tp = 1 s -50 - - -5 - A
nonrep.
Ihfe l
* f = 0.05 -4 -1 4 - - -
=0.5 MHz -10 -0.5 4 - 4 -
fT 2 ~
2 - MHz
• hfe -4 -1 40 - - -
f = 1 kHz
Cob -108 - 1000 - 1000 pF

f=O.l MHz
R8JC -10 -10 - 1.17 - 0.7 °CIW
See page 252 for footnotes.

Fig. 6 - Typical saturated-switching times for
all tvpes.
______________________________________ ~ __________________________ 251
POWERTRANSISTORS ________________________________________________________________________ ~-- ___

ELECTRICAL CHARACTERISTICS, at Case Temperature (TC) = 25"C
Unless Otherwise Specified (Cont'd)
TEST CONDITIONS
LIMITS
VOLTAGE CUR·
CHARAC· Vdc RENT
RCA9116C RCA9116D RCA9116E UNITS
TERISTIC Adc
VCE VBE IC Min. Max. Min. Max. Min. Max.
-1408 - -1 - - - -
ICBO -120a - - - -1 - -
-1008 - - - - - -1
-140 1.5 - -1 - - - -
ICEX -120 1.5 - - - -1 - -
ICEX -140 1.5 - -5 - - - -
TC=150°C -120 1.5 - - - -5 - - rnA
ICED -70 - -1 - - - -
IB=O -60 - - - -1 - -
lEBO -5 - -1 - -1 - -1
hFE -2 -5c 25 150 25 150 - -
-2 -7.5c - - - - 10 100
-2 -10c 10 - 10 - - -
VCER(sus)b
-0.2 -150 - -130 - -110 -
RBE';;100n
VCEO(sus)b -0.2 -140 - -120 - -100 -
VEBO
IE=-l rnA
0 -5 - -5 - -5 - V
VBE -2 -7.5c - - - - - -3
-2 -5c - -2 - -2 - -
VCE(sat)
IB=-0.75A -7.5c - - - - - -1.5
=-0.5A -5 c - -1 - -1 - -
ISlb
tp= 1 s -35 -5.71 - -5.71 - - - A
nonrep. -25 - - - - -8 -
Ihle l -10 -0.5 4 - 4 - -

4
1= 0.5 MHz
IT 2 - 2 - 2 - MHz
Cob -108 - 1000 - 1000 - 1000 pF

1= 0.1 MHz
ROJC -10 -10 - 0.875 - 0.875 - 0.875 °C/W
* 2N~types in accordance with JEDEC registration data format JS25 RDF1, Issue 1.
• VCB b CAUTION: Sustaining voltages VCEX!sus), VCER!sus). and C Pulsed; pulse duration = 300"s,
VCEO (sus) MUST NOT be measured on a curve tracer. duty factor = 1.8%.
d Measured at IE = -0.1 mAo
252 ______________________________________________________________________
POWER TRANSISTORS
2N6648, 2N6649, 2N6650, RCA8350, RCA8350A, RCA8350B

10-Ampere P-N-P Darlington Power Transistors Features:
40-60-80 Volts, 70 Watts • High reverse second-breakdown capability
Gain of 1000 at 5 A Applications:
• Power switching • Audio amplifiers
The 2N6648, 2N6649, 2N6650, and They are all supplied in hermetic steel • Hammer drivers
RCA8350, RCA8350A, RCA8350B-, are JEDEC TO-204MA packages. • Series and shunt regulators
monolithic silicon p-n-p Darlington tran-
sistors designed for low- and medium-fre- TERMINAL DESIGNATIONS
quency power applications. The high gain 1----------,
of these devices makes it possible for them I I
to be driven directly from integrated cir- ) I
cuits. The 2N6648 and RCA8350 are I I
complementary to the 2N6383; the I I
2N6649 and the RCA8350A are comple- I I
mentary to the 2N6384; and the 2N6650 IL _ _ _ _ _ _ _ _ _ ..JI
and RCA8350B are complementary to the JEDEC TO-204MA
2N6385. E
92CS-20863RI
• Formerly RCA Dev. Nos. TA8351. TA8488. and Fig. 1 - Schematic diagram for all types.
TA8350. respectively.
MAXIMUM RATINGS,
*
Absolute-Maximum Values:
V CBO ..•........•..................
2N6648
RCA8350
-40
2N6649
RCA8350A
-£0
2N6650
RCA8350B
-SO v ,. .
I(lO,
4 "-
I
VCER(sus)
RBE = 100.n .................... . -40 -60 -SO v ~ 2 \\ "c",+1 ~.,
* VCEO(sus) -40 -60 -SO V Ii \ '\ ~....

VCEV(sUS) ..
~ 10 ~.....-
'-'!~~,
'I- "
V BE =-1.5 V .................... . -40 -60 -SO V ~ 61- ~
\
*
~-:T~i'o.
4
V EBO ............................. .
* IC ..................•..•...........
-5
-10
-5
-10
-5
-10
V
A I ~ \
~r- ~
:;l.
~
C>
OJ.
I~-
. .
2
*
ICM ........•.......................
IB ..............•..................
-15
-0.25
-15
-0.25
-15
-0.25
A
A
I
10
, 2 4
Ii '1\I"l(
6 B 4
10
,, 2
10
2 ,
10
* PT NUMBER OF THERMAL CYCLES
TC <;;; 25°C ...................... . 70 70 70

TC > 25°C ........... Derate linearly 0.56 Fig. 2 - Thermal-cycling rating chart tor
• Tstg • TJ .......................... . -65 to +150
all types.
• TL
At distances ;;. 1/32 in. (0.8 mm) from
seating plane for 105 max. . ........ . 235 _ _ _ __
* In accordance with JEDEC

---~ --
registration data format (JS-6 RDF·4)
-"
COLLECTOR-TO-EMITTER VOl.TAGE (Vc£I-V 92CM-'0735
___________________________________________________________________
Fig. 3 - Maximum operating areas for all types. Fig. 4 - Maximum operating areas for all types at T C = 1000 C. 253·
POWER TRANSISTORS
2N6648, 2N6649, 2N6650,RCA8350, RCA8350A, RCA8350B

ElECTR ICAl CHARACTERISTlCS,At Case Temperature (TC) = 2fiOC Unless Otherwise Specified
TEST CONDITIONS
LIMITS
~~~~~
2N6648 2N6649 UNITS
Vdc Adc RCA8350 RCA8350A
VCE VSE IC IS MIN. MAX. MIN. MAX. MIN. MAX.
ICEO -40 0 - -1 - - - -
-60 0 - - - -1 - - mA
-80 0 - - - - - -1
-40 1.5 - -0.3 - - - - 10
• ICEV -60 1.5 - - - -0.3 - - 2 .. $'·100
-80' i.5 - - - - - -0.3 ·~I -I
COLLECTOR CURRENT Il.cl-1.
-10
-40 1.5 - -3 - - - -
TC = 1500(; -60 1.5 - - - -3 - - Fig. 5 - Typical de beta charac"eristics for
-80 1.5 - - - - - -3 for all types.
* lEBO 5 0 - -10 - -10 - -10 mA
• VCEO(sUS) -0.2a 0 -40 - -60 - -BO -
VCER(sus)
RBE = lOOn
-0.2a -40 - -60 - -80 - V
VCEV(sUS) 1.5 -0.2a 1-40 - -60 - -80 -
* hFE -3 -5a 1000 20,000 1000 20,000 1000 20,000
-3 -loa 100 - 100 - 100 -
VBE -3 -5a - -2.B - -2.B - -2.B
-3 -loa - -4.5* - -4.5* - -4.5* V
VCE(sat)
-sa -O.Ol a - -2 - -2 - -2
-loa -0.1· - -3* - -3* - -3* V
VF loa - 4 - 4 - 4 V
2 461 l 418 2418 2 461 24682
hfe 0.001 0.01 0.1 I 10 10
f = 1 kHz -5 -1 1000 - 1000 - 1000 - FREQUENCYIII-MHI
* Ihfel
Fig. 6 - Typical small-signal gain for all types
f = 1 MHz -5 -1 20 - 20 - 20 -
ESlb
L = 3 mH, 1.5 -4.5 30 - 30 - 30 - mJ
RBE = 100 n
ISlb
t = 1 s,
-35
-25
-1
-2.8
-
-
-1
-2.B
-
-
-1
-2,B
-
- A
I ."
nonrep. I!
1-'1
·1
ROJC - 1.75 - 1.75 - 1.75 oCIW

I~ -8
I"
" In accordance with JEDEC registration data format (JS-6 RDF·4). I~ -i
• Pulsed: Pulse duration = 300 liS, duty factor = 1.8%. ~

a -4
-.
C:OllECTOA-TO-EMITTER SATURATION VOLTAGE [VCEllOt~-'1
Fig. , - Typical saturation characteristics

for all types.
COL.U:CTOR SUPPLY VOLTAGE (Vccl--20V

114 lIU- 112-1 C/500 ,TC-8-C
,.
---
.........
~
--K ..........
I
.. o.
I ..... ....
I ...
-
~
'"
~
OA
... ........... .!!-
COLLECTOR-TO-EMITTER VOLTAGE 1VCE1-V

-. O.
-I
COLLECTOR CUMt£NT ftc I-A
It • 7' • '-10
Fig. 8 - Typical output charactaristics for ",g. 11 - Typical transfer characteristics for Fig. 10 - Typical saturated switching-time
all types. all types. characteristics for all types.
254
2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B

Features:
10-Ampere P-N-P Darlington Power Transistors • Operates from IC without predriver
• High reverse second-breakdown capability
40-60-80 Volts, 65 Watts
Applications:
Gain of 1000 at 3 A (2N6666, RCA8203) • Power switching • Audio amplifiers
Gain of 1000 at 5 A (2N6667, 2N6668, RCA8203A, RCA8203B) • Hammer drivers
The 2N6666, 2N6667, 2N6668, and These devices are supplied in the JEDEC
RCA8203, RCA8203A, RCA8203B are TO-220AB straight-lead version of the
monolithic silicon p-n-p Darlington tran- VERSA-WATT package TERMINAL DESIGNATIONS
sistors designed for low- and medium- Optional lead configurations are available
frequency power applications. The high upon request. For information, contact
gain of these devices makes it possible for your nearest RCA Sales Office.
them to be driven directly from inte-
grated circuits. The 2N6666 and RCA
8203 are complementary to the 2N6386;
the 2N6667 and RCA8203A are comple-
,---------1 BOTTOM VIEW
mentary to the 2N6387; and the 2N666B I I
and RCA8203B are complementary to I I
I I JEDEC TO-220AB
the 2N6388 ....
I I
-Formerly RCA Dev. Nos. TA8204. TA8487 and :L _ _ _ _ _ _ _ _ _ I ~
TA8203. respectively.
ATechnicel data for 2N6386-2N6388-are given in 92CS-20863RI
RCA Bulletin File No. 610.
Fig. 1 - Schematic diagram for all types.

2N6666 2N6667 2N6668
NOTE: a.RM:NT DERATING AT CONSTANT
RCA8203 RCA8203A RCA8203B VOLTAGE APPLIES ONLY 10 TH£ OISIIPATION-
• v CBO ............................... . -40 -60 -80 v ~a I.IM'TED fIOATION AND THE IS/b -L.IMITED
VCER(sus) !i~1aJ PatTION OF MAXIMUM OPERATING AREA

CURYE, DO NOT DERATE THE
RBE = 100 n ...................... . -40 -60 -80 v i~~ SPECIFIEO VAL.U€ FOR .I.e MAl(
~og
VCEO(sus) ........................... .
;~~
-40 -60 -80 V
100
VCEV(sus)
V BE = -1.5 V ...................... . -40 -60 -80 V i~~
~~
• V EBO .............................. . -5 -5 -5 V
~1!5= "
• 'C ................................. . -8 -10 -10 A ~~i '0
'CM ................................ . -15 -15 -15 A ~~a
• 'B ................................. . -0.25 -0.25 -0.25 A ~~
• PT "
~ 250 C ....................... .
TC .... 65 65 65 w is so 15 100 125 180 115 200
TC >
25°C ........... derate linearly 0.52 W?C CASE TEMPERATURE 1TCI--C
• Tstg • TJ ........................... .. -65 to +150 - - - °c

TL Fig. 2 - Derating curve for BII types.
At distances ;;;'1/8 in. (3.17 mm)
from case for 10 5 max. ---_235
'In accordance with JEDEC registration data format (Js.6 RDF-4).
, ,
•
•I • 11 .,, COLLECTOR-tO-EMITTER VOLTAGE
--
NcE'--3 V
~ 2 ~ 10:
\~
i!
1\ &~ ~:-r-- i ..-;< r
i:I '0• 2
iI03_~,,.1f)~~~~
.
is
.~
.~ ~
2
, - ~~~~
~\,
!.. .;" g \(; ~ ~ ,r."/i

II
4& ..
~ I' ~l\ I~
f,;
, ......7 I
,0-
103
~
2 4 . 8104 2 4 . 810S
NUMBER Of' THERMAL CYCLES
2 4 . 1 10,
"./1,
-0.1
. .I ,-I
, . , . , . ..-'00
-10
COLLECTOR CURRENT 11(;1-"
0.001
I ....
0.01
i: ....
0.1
2 ... ,
FIIIEGUENCYlti-MHI
I
I: ....
10
2""
10
•
Fig. 3 - Thermal-cycling rating chart for all types. Fig. 4 - Typical dc betB characteristics Fig. 5 - Typical smail-signal gain
for all types. for al/type•..
____________________________________________________________________ 255
POWER TRANSISTORS
2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B

ElECTR ICAl CHARACTER ISTlCS, A t Case Temperature (T.C) = 2f1'C Unless Otherwise Specified

CHARACTERISTIC VOLTAGE CURRENT 2N6666 2N6667 2N6668
SYMBOL Vdc Adc RCA8203 RCA8203A RCA8203B UNITS
VeE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX.
ICEO -80 0 - - - - - -1
-60 0 - - - -1 - -
-40 0 - -1 - - - -
mA
-80 1.5 - - - - - -0.3
* ICEV -90 1.5 - - - -0.3 - -
-40 1.5 - -0.3 - - - -
TC = 125°C -80 1.5 - - - - - -3
-60 1.5 - - - -3 - -
40 1.5 - -3 - - - -
lEBO 5 0 - -10 - -10 - -10 mA
VCEOlsus) -0.2a 0 -40 - -60 - -so -
VCERlsus)
RBE=100n
-0.2a -40 - -60 - -so - v
VCEvlsusl 1.5 -0.2a -40 - -60 - -so -
-3 -3a 1000 20.000 - - - -
• hFE
-3 -5a - - 1000 20.000 1000 20.000
-3 -8a 100 - - - - -
-3 -loa - - 100 - 100 -
-3 -3 a - -2.8 - - - -
-3 -5a - - -2.S - -2.8
VBE -3 -8a .. -4.5 _ . - - -
V
-3 -loa - -- -4.5 - -4.5
-3a -0.006a - -2 - - - -
_5 a -O.Ol a - - - -2 - -2
VCElsatl -sa -O.osa _. ·-3 - - - - V
- loa -O.la - .- .- ·-3 - -3
sa - 4 - - -
VF V
lOa - - 4 - 4
hie
1=1 kHz -5 ·-1 1000 1000 - 1000 -
Ihlel
1=1 MHz -5 -1 20 20 20 -
Es/b
L = 3 mHo 1.5 ·-4.5 30 30 - 30 - mJ
RBE = lOOn
ISlb
-20 3.2 ... -3.2 - -3.2 - A
t = 1 S, nonrep.
~
ROJC - 1.92 - 1.92 - 1.92 °C/W
apulsed: Pulse duration = 300 P.S, duty lactor = 2%.

*In accordance with JEDEC registration data format IJ5-S RDF-4).
COLLECTOR-lO-EMITTER VOLTA"GE {VeE)-·!V

.,.
I'
!! ...C
~
II!
~
I
-2.5
-I -2 -, -4
IASE-TQ-EMITTER YOLTAGE IVI£1-V COLLECTOR-lO-EMITTER VOL.TAGE (VeEl-V
Fig. 6 - Typical input character/.t/cs Fig. 7 - Typ/cal output character/lt/cs

for aI/ typal. foral/typa•.
256 ______________________________________________ ~ ___________________

POWER TRANSISTORS
2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B

J 11.~ COLLECTOR-lO-EMITTER VOLTAGE (VeEI __ 3 V
"
7.'
~
g
a.•
I
BASE-lO-EMITTER VOLTAGE IVSEJ-V
92CS-24f(l7RI
Fig. 9 - Typical transfer characteristics for all types .
.,.
u _6
~
~ -4
-a
o -I -3
COLLECTOR-TO-EMITTER SATURATION \IOl.TAGE [VCEt.at~-V
Fig. 10 -' Typical saturation characteristics

92CM-&l731 for all types.
°
~ig. 8 ~Maximum operating areas for all types of T C = 25 C.
Fig. 12 - Minimum values of reverse-bias second

breekdown characteristic (ES",)
for all types.
COLLECTOR SUPPL'f VOLTAGE {VCC,"-20V
-
ISI-[S2 -[c/500, TC· 2!S·C
I.' ,-r-
I.a~-
10.8
!
I
0.6
o.
o.a
I
---
f'..
...........
~
~
~ fo-f-
i'
i'
~
0.1
-I
. , . , ..
COllECTOR CURRENT tIel-A
-10
'2CS-20'88RI
Fig. 73 - Typical sBturated switching-time

92CM-30730
Fig. 11 - Maximum operating areas for all types at TC = 100°C.
257
2N6669
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistor Features:
• low satu ration voltages
• Switching speed
General-Purpose, Medium-Power Type for
Switching and Amplifier Applications
The RCA-2N6669- is an epitaxial-base silicon TERMINAL DESIGNATIONS

shunt regulators. automotive voltage regu-
n-p-n transistor supplied in the VERSAWATT lators. and driver stages for high-fidelity
package. This transistor is intended for a amplifiers.
wide variety of medium-power switching
and amplifier applications such as series and -Formerly RCA Dev. No. TA9105. i,
0:1
MAXIMUM RATINGS, Absolute-Maximum Values: 2N6669 I'
* V CBO ............................•..•....•.. 40 V BOTTOM VIEW
* V CEO ....................•.........•....•.. 30 V
* V EBO .....................•...•.....•...••. 5 V
: IC .........................•................ 10 A
JEDEC TO·220AB
* :~ ::::::::::::::::::::::::::::::::::::::::::
4. A
1.4 A
• PT:
At TC = 25°C ......•.•...•.....•......•... 40 W
At TC = 100°C ......•..........•.......•.. 16 W
At T C ;;;. 25°C ................ Derate linearly 0.32 wfOc
• Tstg • T J ....•...........•••.....•.•••....... -65 to 150 °c
* T L (During soldering):
At distance 0.125 in. (3.17 mm) from case
for 10 s max. 235
* In accordance with JEDEC registration data format (JC-25 RDF-ll.
NUM8ER or THl!AM41. CYCLES
Fig. 1 - ThermaloCycling rating chart.
10
COLLECTOR-TO-EMITTER VOLTAGEIVCE1- V COLLECTOR-TO-EMITTER VOLTAGEIVCEI-V
112CM-30187
112CM-29ft7
Fig. 2 - Maximum operating areas at TC = 25°C. Fig. 3 - Maximum. operating areas at TC= 100°C.
258 ________________________________________________________________
POWER TRANSISTORS
2N6669
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 2fiOC

VOLTAGE CURRENT
CHARACTERISTIC 2N6669 UNITS
Vdc Adc
VCE VBE IC IB Min. Typ. Max.
ICEO 20 - - 0.1 rnA
* ICEV 40 -1.5 - - 0.1
rnA
TC-l00o C 20 -1.5 - - 5.0
* lEBO 5.0 - - 1.0 rnA
* VCEO(sus) 0.2 30 - -
V
0.1 1
COLLECTOR CURRENT (:reI-A 92CS-30168
~
VCER(sus)
0.2 40 - - Fig. 4 - Typical de beta characteristics.
RBE = 50 11
* hFE 2 5a 20 - 100
28 COLLECTOR- TO-EMITTER VOLTAGE (VCE'- 2V
* VBE(sat) 5a 0.5 - - 2.0 V
5a 0.5 - - 1.0
i M~~--~~~--~~~~+4--+-~~~
* VCE(sat)
lOa 1.0 - - 2.5
V 1
~ oo~~~~~+-~--+-~+-~--~+-~
~ 1/
* Cobo
~ 16~~--~~+--~--+-~~~--~+-~
VCB = 10 V, f = 1 MHz 50 - 150 pF go
* Ihfel . ~ 12111/,---+--+~u--+---+~++--+,,~~~
2 0.5 10 - 70
:~
f = 1 MHz
B~~--~~+-·~--+-~+--+--~+-H
ISib 25 1.0 - - A
t = 0.5 s, nonrepetitive 10 4.0 - - cz .~~--~~+-~.--+-~+--+--~+-~
.'"
* td C 5.0 0.5 - 0.03 0.05
4 6 80.1 2 4 6 8
* t rC 5.0 0.5 - 0.2 0.3 0.01
COLLECTOR CURRENT IIc)-A
p.s
* t C
s 5.0 0.5 - 0.3 0.5 Fig. 5 - Typical gain-bandwidth product.
* tfC 5.0 0.5 - 0.3 0.5
* ROJC 10 4 - - 3.125 °CIW
*Minimum and ma)(imum values and test conditions bCAUTION: The sustaining voltages
in accordance with JEDEC registration data format JC-25 RDF·1. V CEO(susl and V CER (susl MUST NOT
apulsed; pulse duration = 300 IlS, duty factor ~ 2%. be measured on a curve tracer.
c VCC=3OV,IS1 =-IS2
COLlECTOR-TO-EMITTER VOLTAGE (VCE)-V 92CS-30169
Fig. 6 - Typical output characteristics.
BASE-lO-EMITTER VOLTAGE (YaEl-V UCIjI-301e&
Fig. 8 - Typical bsse-to-emitter saturation Fig. 9 - Typical saturated .witching

Fig. 7 - Typical saturation cMmct/Nistics.
characteristics. characteristics.
___________________________________________________________________ 259
POWERTRANSISTORS ______________________________________________________________________ ~---
2N6671,2N6672,2N6673
Features:
5-A . . " " .. . Power Transistors • 100% High-Temperature Tested for
High-Voltage N-P-N Types for Off-Line Power Supplies and Other 1~c Parameters
• Fast Switching Speed
High-Voltage SWitching Applications • High Voltage Ratings:
VCEX = 350 V to 450 V
The RCA-2N6671, 2N6672, and 2N6673- high-speed transistors are 1OO-per·cent tested
SNitchMax series of silicon n-p·n power for parameters that are essential to the design • Low VCE(sat) at IC = 5 A
transistors feature high·voltage capability, of industrial high·power switching circuits. • Steel Hermetic TO-204MA Package
fast switching speeds, and low saturation Switching times, including inductive turn-off
voltages, together with high safe-operating· time, and saturation voltages are tested at Applications:
area (SOA) ratings. They a.re specially de- 1250 C, as well as at 250 C, to provide infor·
signed for use in off-fine power supplies and mation necessary for worst·case design. • Off- Line Power Supplies
are also well suited for use in.a wide range of • High·Voltage Inverters
The RCA·2N6671, 2N6672, and 2N6673
inverter or converter circuits and pulse·width· series transistors are supplied in steel JE DEC • Switching Regulators
modulated regulators. These high·voltage, TO·204MA hermetic packages.
-Formerly RCAB767, RCA8767A,and TERMINAL DESIGNATIONS

RCAB767B, respectively.
MAXIMUM RATINGS. Absolute·Maximum Values:

2N6671 2N6672 2N6673
* VCEV
v BE c - 1.5V ........................ . 450 550 650 V JEDEC TO·204MA
* VCEX (Cll'mpedl
v BE --l.5V ........................ . 350 400 450 V
: ~~:~ ::::::::::::::::::::::::::::::::::: 300 350

8
400 V
V
* :~~.I.:::::::::::::::::::::::::::::::::::
5 A
8 A
• :~M.. :::::::::::::::::::::::::::::::::::: 10
4
A
A
• PT
TC up to' 26"c ....................... .. 150 w
• TCabove.25oC,darate linearly ........... . 0.86 WPC
Tllg, TJ ., ••..•............•..........•. -65 to 200 °c
• TL
At diltence ;> 1/16 in. (1.68 mml from
...ting plana for 10 s max. . .....•..•.•.. 235 °c
•• In _rdance with JEDEC registration date.
I
CASE TEMPERATURE (TC)--c
Fig. 1 - Dissipation and 'SIb derating curves for

all tVpe•.
• e
200 COLLECTOR-TO-EMITTER
VOLTAGE IYCE)-3V
~
.
~ ,
c 'co
;..
;1' V
L
....... r
Iwe ··-
;~4 ~
........
~
~
"-r--
!!ill'
~ a,
all
V · J TEMPERAT~ ITcl. ~
I 'V L ~ CASE
... ....., ... . ...II · . . .., ."'". . .

I 1"1 I
.., I I I
g
I l~ 10
I I 4. " •
0.0.1 10 0.1 10
PULSE Wf)TM Ct,J-. COLLECTOR CURRENT (1c1-A NUMBER OF TH'!RIlAL CYCLES teCS- 104_
3 - Typical de betIJ ehllracteristicr for all tYfJB$. Fig. 4 - ThBrmal-cycling ehllrt for ell tYfJB$.
Fig. 2 - Typit:lll thermIII-IWpOMe chllracteriltic Fig.
for ell rypel.
~o ___________________________________________________________
2N6671,2N6672,2N6673
CHARAC·
UNITS
TERISTIC
v
450 -1.5 - 0.1 - - - -

ICEV 550 -1.5 - - - 0.1 - - mA
650 -1.5 - - - - - 0.1
* lEBO -s 0 - 2 - 2 - 2
VCEO(SUS)D 0.2a 0 300 - 350 - 400 - V
COLLECTOR CURRENT (lei-A
10
* hFE 3 5a 10 40 10 40 10 40 ,reS-ZltI"_t
VBE(sat) 5a 1 - 1.6 - 1.6 - 1.6 Fig. 5 - Typical collector·to-emitter saturation IIOltaga
as a function of col/ector cu"ent for all types.
5a 1 - 1 - 1 - 1
VCE(sat)
sa 4 - 2 - 2 - 2
V
* VCEX b
(Clamped ES/b) -5 5 Ie 350 - 400 - 450 -
l=170 IJH.
RBB=5 n
-5 S 3e 200 - 250 - 300 -
* IS/b 25 6 1 - 1 - 1 - s
* Ihf~1 f-5 MHz 10 0.2 3 12 3 12 3 12
fT 10 0.2 15 60 15 60 15 60 MHz
* Cobo f=O.1 MHz 10c 50 300 50 300 50 ·300 pF
tdd 5 1 - 0.1 - 0.1 - 0.1
* t rd 5 1 - 0:5 - 0.5 - 0.5
* tsD 5 Ie - 2.5 - 2.5 - 2.5
COLt,.ECTOR CURRENT 1XCI-A
10
* tfd 5 Ie - 0.4 - 0.4 - 0.4 92CS-29'84
IJs Fig. 6 - Typical base-to-emitter ",turstion IIOIt_tu

tc a function of collector current for all types.
VCC=125 V.
l=170 IJH.
RC=25 n
5 Ie - 0.4 - 0.4 - 0.4 4 COLLECTOR -TO-EMITTER
VOl.TAGE 1VCE)-3Y
I
Collector clamped
to VCEX
450 -1.5 - 1 - - - -
ICEV 550 -1.5 - - - 1 - - mA
650 -1.5 - - - - - 1
VCE(sat) 5a 1 - 2 - 2 - 2 V
* trD 5 1 - O.S - .O.S - O.S
* t sd 5 Ie - 4 - 4 - 4
* tfd 5 Ie - O.S - O.S - O.S
}.IS CCLLECTOR CURRENT (xc) -A
10
* tc
VCC=125 V. Fig. 7 - Typical base-to-emirrer IIOltaga a. a function
of collector current for all type..
l=170IJH. 5 Ie - O.S - O.S - 0.8
RC=25 n
Collector clamped
to VCEX

a Pulsed: pulse dUration = 300 /AS. duty factor ..;; 2%.
b CAUTION: The sustaining voltage VCEOlsusl
and VCEX MUST NOT be measured on a curve tracer.
COLLECTOR-TO-EMITTER VOLTAGE IV(:EJ-V
Fig. 8 - Typical output eM_isti" for all typer.

______________________________________________________________ ~261
POWERTRANSISTORS __________________________ ~ ___________________________________________________
2N6671, 2N6672, 2N6673
COLLECTOR-TO-EMITTER YOLTAGE IYcE'- Y

92C1I-29979RI
Fig. 9 - Maximum operating areas for all types ITC = 25° CJ.
CClLLKTOR-TO-DlITTER VOLTMECVcE'-V
Fig. 10 - Maximum operBtingBres. for all type. ITC= tOOOCI.
262 __________________________________________________ __ __________

~
~
~
POWER TRANSISTORS
,
2N6671, 2N6672, 2N6673 I,
COLLECTOR ClJitRENT IIC)-A COLL.ECTOR CURRENT (ICI-A
Fig. 11 - Typical saturated switching time Fig. 12 - Typical saturated switching time Fig. 13 - Typical saturated switching time
characteristics for all typa•• character/nics for all types. characteristics for a/l types.
CASE TEMPERATURE (1cl*25-C

Ii'lr.">" FREOUENCV (f )e' MHz
ll.
~J. ",-~I..
i!'"
II :.......
.""
~I '
,. c...
-:-to-,
4 •
COlL.ECTOR CURRENT IIC)-A CAIE TlMPENATUftE (Te)--C
II . ...,
2
10
2
I
... • ...
I
10'
COLLECTOR-lO-BASE VOLTAGE IVcal- v OR
EMITTER-lO-BASE \IOt.TAGE (VEBI-V
Fig. 14 - TypicallSllturated switching time

Fig. 15 - Typical saturated switching time Fig. 16 - Typical common-bBse input or output
characteristics for all types....
characteristics as B function of capacitance characteristics as a func-
CBSe tamparature for all types. tion of collector-to-b..e voltage or
emitreNo-bBse voltage for.1I types.
to .. Ie (PEAK)
9!CS-'S03'.
Fig. 17 - Oscilloscope display for measurement of

clamped induction switching time ftc)'
______ ~ ___________________________________________________________ 263

2N6674, 2N6675
Features:
10-A IiIwIlIIIIM. Power Transistors • 100% High-Temperature Testad for
• F8st Switching Speed
High-Voltage N-P-N Types for Off-Line • High Voltage Ratings:
Power Supplies and Other High-Voltage veE X • 350 V to 450 V
Switching Applications • Low VCElsati at IC = 10 A
• Steel Hermetic T0-204MA Package
The RCA-2N6674 and 2N667S- Switch Max times, including inductive turn-off time, and 100UC Parametars
series of silicon n-p-n power transistors fea- saturation voltages are tested at 1000C, as .
ture high-voltage capability, fast switching well as at 2So C, to provide information Applications:
speeds, and low saturation voltages, together necessary for worst-case design_
• Off-Une Power Supplies
with high safe-operating-area (SOA) ratings_ The 2N6674 and 2N667S transistors are sup- • High-Voltage Inverters
They are specially designed for off-Jine power plied in steel JEDEC TO-204MA hermetic • Switching Regulators
supplies, converter circuits and pulse-width- packages_
modulated regulators_ These high-voltage,
high-speed transistors are 100-per-cent tested
for parameters that are essential to the design -Formerly RCA Dey. Type Nos_ TA9114Dand TERMINAL DESIGNATIONS
of high-power switching circuits_ Switching TA9114E, respectively_

2N6674 2N6675
* VCEV V~=~.V . ___ . _____________ . _____ . ___ _
450 650 V
* VCEXIClamped)
V BE = -1.5 V - - - - - - - - _. - - - - - - - _- - - - - - - - _ .. 350 450 V
JEDEC TO-204MA
* VCEO - - - - - - -. - - - - - - - - - _. - - - - - - - _. - - - - - - - - _. 300 400 V
* VEBO - - - . - - - - - - - - . - - - - . - - - - - - - - - . - • - .• - - - . - 7 V
IClset ) - - - - - - _. - - _...• -'" - -" - - - -'" _. _•.••. 10 A
* IC ..•. - •.•••... -. - .. - -. -. -. - .•• - -" - - - -. - - -. 15 A
*
*
:~M
PT
__ ::::::: :::::: :::::::::::::::: ::::: :::::: 20
6
A
A
T C up to 25°C _., - - _••.•.•• - • ___ . - - - _.• - __ _ 175 W

T C above 25°C, derate linearly • __ .•. _. __ . ___ . _ 1 wfOc
_ _ _ -66 to200
* T stg , T J . - - _. _.. - - - - - - - - - - - - - - - - - _. - - - _. - - - -- °c
* TL
At distance ;;. 1/16 in. 11.5B mm) from
seating plane for 10 s max_ 236 °c
,
CASt T£MP£RATURE {TCI--C
Fig_ 2 - Dissipation and 'SIb derating curves

for both types_
•I ·
t •
~
~
I-
i
i! :=;$~
100
~ ..1\ "*.~~~, .
11
-"'
I · \ 1"- ~ ........
· ."t l. .~ . .
lit r---r-. • a 10 II '.0'
COLLECTOR-lO-EIIITTER _TAtlIVclI-V
'IC"·I~ Fig. 3 - Thermal-cycling chart for both types.
Fig_ 1 - Maximum operating area. for both types
ITC = 2ff' c/_
264 ________________________________~---------------------------------
2N6674, 2N6675
TEST CON.DITIONS LIMITS
~
~
.,.
,u,
VOLTAGE CURRENT ~
,
I8 .,,,
CHARACTERISTIC Vdc Adc 2N6674 2N6675 UNITS
VCEJ VBE I£JIs Min.1 Max. Min. I Max.

TC = 25:0,C ..:Ii / .......
.. ICEV
450
650
-1.5
-1.5
-
-
0.1 -
- -
-
0.1
1=
Ii! .
0.1 ,
,
lEBO
VCEO(sus)b
-7 0
0.211 0
-
300
2
-
-
400
2
-
mA
V
i , , , .. , ... , ... , ...
0.01
0001 0.0' A' 10
hFE 2 loa 8 20 8 20 PUl.SE WIDTH (1 11) - '
,2CS-305l7
VBE(sat) lOa 2 - 1.5 - 1.5
Fig. 4 - Typical thermal-response characteristic
VCE(sat)
loa 2 - 1 - 1 for both types.
15a ·5 - 5 - 5
.
V
VCEX b j""'. COLLECTOR - TO - EMITTER VOLTAGE (VeE) • ! V
(Clamped ES/b) -4 10 2 350 - 450 - - I I
L=50j.lH,RBB=2 n
ISlb
30 5.9 1 -
-
1 - 5
~
~ .-~~J..,,1 "<-%-
~.,.~
'-:rJ ""0 •
100 0.35 1 1 - ~ • 2:s-c
......
Ihfel f = 5 MHz 10 1 3 10 3 10 ~
,,~
fT 10 1 15 50 15 50 MHz ~'10 -<0,<
eobo
ti
f = 0.1 MHz 10c 150 500
-
150 500
-
pF
I~ · . .....
i'..
t rd
-6
-6
10
10
2
2 -
0.1
0.6 -
0.1
0.6
g
, . .. '0
COLLECTOR CURRENT I Ie) - A
2 .. 100
t 5d -6 10 ~ - 2.5 - 2.5 '2CS-30SIS
tfd -6 10 ~ - 0.5 - 0.5

j.lS
for both typtJ8.
tc
Vee= 135V,
L=50j.lH,RC~ -6 10 ~ - 0.5 - 0.5
13.5 n,ColleC1or
clamped to V CEX
ICEV
450 -1.5 - 1 - - mA
650 -1.5 - - - 1
VCE(sat) loa 2 - 2 - 2 V
t rd -6 10 2 - 1 - 1
t 5d -6 10 ~ - 4 - 4
tfd -6 10 ~ - 1 - 1
j.I5
COLLECTOR CtJftRENT (Ie) - A
tICS-34»'.
tc Fig. 6 - Typical collector-to.amitter saturation
Vec = 135 V, voltage characteristics for both types.
L=50j.lH,RC< -6 10 ~ - 0.8 - 0.8 ta • leIS

13.5 n,ColleC1or
clamped to V CEX ~>
§J- 2
lii
1- 1 °CIW
5
apulsad: pulse duration = 300 ,.S, duty factor ~2%. OvCBvolu••
Jj,
e~ _4O'C -c::~_\oO-C
~
. G'
.0
bcAUTION: The sultaining voltage V CEOC.Ulland V CEX dvCC ·'35 V,tp = 20,... ~>
~
•
l"2o-c ~1•• ·tl
MUST NQT bl m..... red on a curve tr....... e1 B1 • -IB2' ~,."",
..
*In accordance with JEDEC registration date. '-1
0.,
, 8 10 & toO
COLLECTOR CURRENT (Iel - A
92CS-30316
Fig. 7 - Typical base-to-emitter saturation

voltage characteristics for both types.
___________________________________________________________________ 265
POWERTRANSISTORS: __________________________________________________________ ~-------------- __
2N6674, 2N6675
1.1..'
7
•
,
0.4 COLLEC~;iRCURRE..!rC:EC)-A LI COLLECTOR~TO-EMITrER VOI.TAGE eVCE)-Y
tICI~,,""" t2CS-lOS73
UCS·303'M
Fig. 8 - TypiCilI ,mell..ignal forward currlHlt Fig. 10 - Typical .aturatBd·lWitchin,.tima charae·
Fig. 9 - Typical output characteri.tlc. for t";i.tlc. at TJ - 2sO Ca. a function of
tran,fer ratio charaetBriltlc for
both type•. collaetor currant for both typal.
both typal (f - 5 MHz).
i
Ii 30 40 50 60 80
COLLECTOR CURRENT l%cl - A teeS-JOIn JUNCTION TEMPERATURE CT.J) _·C 92C1-5OJ1$
MCS-1OI10
Fig. 1 1 - Typical ",turated·lWitchin,.tima charac- Fig. 12 - Typical.aturatBd-lWitchln,.tlmB cherae· Fig. 13 - Typical.aturatBd..witching·timB charac-
terilticlat TJ = 10fPC •• a function of teriltic.at TJ - 10fPCIII. function of teri,tic. lIS B function of junction tem-
collaetor currlHlt for both tYP/1$. collector currant for both typal. peratura for both typal.
~~.,.: CAlI TEMPERATURE I1cl • 16-«:

FREQUENCY Ctl • 111Hz
§~ : T
~
IID'
I e:
d.,: t-- l3.
r
~
2....1'4
M87S
n= ~ o,L--,~~-.~-,~MO~«O~~~KO~
iL_4 CLAMPED COL.LECTCR -TO- EMITTER
\/OLT_ [VCEX(C~-V
·"10 4''toa .'10' HCI-1OII4 10"'" Ie (FlU-K)
CCIU.I.1QIt-1O-1IMl .....T_ "'"e)-V'" 82C8-103.,
,MITTlft-TO-1AI1 ...T_ «Yal-:'. IOIII
Fig_ 15 - Maximum operating condition. Fig. 16 - OIcilloscopB di.pllly for normelizad
Fig. 14 - TyplCilI common.IJIJSa input (Clbo)
for .witching betweIHI "'turation mB/J$uramlHlt of clamped inductive
or output (Cobo ) capacitenCil .witching time (tc ).
and cutoff for both typal.
characttlf'l.t/C$ for both typal.
266 _____________________________________________ ~-----------------

POWER TRANSISTORS.
2N6676, 2N6677, 2N6678

Features:
1S-A SWIltJIIMd Power Transistors • 100% High-Temperature Tested for
e
100b Parameters
High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage • Fast Switching Speed
Switching Applications • High Voltage Ratings:
VCEX" 350 V to 450 V
• Low VCE(sat) at IC "15 A
The RCA-2N6676, 2N6677, and 2N667S- switching circuits_ Switching time, including • Steel Hermetic TO·204MA Package
SwitchMax series of silicon n-p-n power inductive turn-off time, and saturation volt-
transistors feature high-voltage capability, ages are tested at 1000C, as well as at 250 C,
fast switching speeds, and low saturation to provide information necessary for worst- Applications:
voltages, together with high safe-operating- case design_ • Off-Lille Power Supplies
area (SOA) ratings_ They are specially de- • High-Voltage Inverters
The 2N6676, 2N6677, and 2N667S tran-
signed for off-line power supplies, converter sistors are supplied in steel JEDEC TO-204MA • Switching Regulators
circuits and pulse-width-modulated regulators_
hermetic pacil.9ges_
These high-voltage, high-speed transistors are
lOO-per-cent tested for parameters that are - Formerlv RCA Dev_ Type Nos_ TA9114A,
essential to the design of high-power TA9114B, and TA9114C, respectively_

2N6676 2N6677 2N6678
* Vcev
VBe = -1.5 V ________________________ _
450 550 650 V
* Vcex (Clamped)
V BE = -1.5 V _- ______________________ _
350 400 450 V
: ~~~g ::::::::::::::::::::::::::::::::::: 300 350

8
400 V
V JEDEC TO-204MA
* :~(S~t_)_::::::::::::::::::::::::::::::::::: 15
15
A
A
* :~M __ :::::::::::::::: ::::: :::: ::::::: :::: 20

5
A
A
* PT T c upto25 C ° ________________________ _
175 W
T C above 250 C, derate linearly ___________ _ 1 wfOc
* Tstg, TJ - - - - - - - - - - - - - - - - - - - - - - - - - - - - _- - _ -65 to 200 °c
* TL
At distance ;;;. 1116 in_ (I_58 mm) from
seating plane for 10 $ max. . .•..•........ 235 °c
* In accordance with JEDEC registration data_
CASE TEMPERATURE (TCI-ec
Fig. 2 - Dissipation and 'Sib derating curves. for

aI/types_
·
· ""t f'
·Hl;. ~>~
IOOI-:e:
·· " ~
~
~
·I~ \ .1"'-.~I~. .r--.....

1\
......
~l
468)0 4 8 8 100
COLLECTOI'Ii-TO-EMITT-;" VOLTAGE (VcE)- V

4 6 81000
92C"-30390
· .810" • 'M>'
Fig. 1 - Maximum operating areas for all types

ITC = 2!1'ci _ Fig_ 3 - Thermal-cvcling chart for aI/ type._
_________________________________________________________________ 267
POWER TRANSISTORS
2N6676, 2N6677, 2N6678

ELECTRICAL CHARACTERISTICS '0. t-- -
~ 6 t--
TEST CONDITIONS ~ I! • 1-- _.
CHARAC- VOLTAGE CURRENT I , -.-
i ,
2N687& 2N6677 2N6678 UNITS
TERISTIC
.0,
Vdci
VCEI VBE
Adc
IC I 18 Min.1 Max. Min.1 Max. Min. I Max. ~ ·· -
TC a 25 C
450 -1.5 - - - - - Ieo", 't-- ..
~ --
f-""
·:[1, r-
0.1
._-
* ICEV 550 -1.5 - - - 0.1 - - r-
*
•
lEBO
VCEO(susl b
650 -1.5
-8 0
0.28 0
-
-
300
-
2
- - - : 0.1
- 2 - 2
- 350 - 400 -
mA
V
I , ... , ... ,
0.01
0.001
i-- .-
0.01 0.,
4 .. , ... 10
PULSE WIDTH (Ip) - .
hFE 3 15a 8 - 8 - 8 - Fig. 4 - Typical thermaf-responBe characteristic
'I21:5-50Jl1
VBE(satl 158 3 - 1.5 - 1.5 - 1.5 for all types.
VCE(satl
158 3 - 1 - 1 - 1 V
• 15a 3 .- 1....5. - J.5 - 1.5
• VCEX b
·f"·• COL.LECTOR -TO-EMITTER VOLTAGE (VeEI • 3 Y
(Clamped ESIbI -6 15 3 350 - 400 - 450 -

11
i
.~~.,J.
'4'e J
I,
L=50pH.
~.e,
RBB=20 - za-c K~).,
"0.
30 5.9 1 - 1 - 1 - c
ISIb 100 0.35 1 - 1 - 1 - s
I i'
~.
Ihfel f=5 MHz
fT
Cabo f=O.1 MHz
10 .
'10
1Qe
1
1
3
15
150 500
10
50
3
15
150 500
10
50
3
15
150 500
10
50 MHz
pF
r:
g
-4Q-c
. ..
r-.
"-
, .••
~a -6 15 3 - 0.1 - 0.1 - 0.1
'0
COLLECTOR CURRENT lIel-A
92C5-305'5
100
* t rd -6 15 3 - 0.6 - 0.6 - 0.6 Fig. 5 - Typical dc beta characteristics

t sd -6 15 3e - 2.5 - 2.5 - 2.5 for all types.
ltd -6 15 ae - 0.5 - 0.5 - 0.5

ps
4 18. le15
t f
c ,,>
Ii
!..L
VCc=200 V.
.
2
L=50pH. !ci
RC ~ 13.50 -6 15 3e - 0.5 - 0.5 - 0.5 il:
~
!:: ...
~~I
TC= I000C :;! ..
~
.... c -t:::~.\ ..'0
450 -1.5 - 1 - - - - II ~~,···tl
* 550 -1.5 - - 1 - - mA
• 0''''1'''''''
ICEV
-
~
• VCE(satl
650 -1.5
158 3
-
-
-
2
-
- 2
-
-
1
2 V
o. , . .• '0
COLL.ECTOR CURRENT(Icl-A
, .. 100
• t rd -6 15 3 - 1 - 1 - 1 Fig. 6 - Typical /Jase·to-emitter llaturation

92C$-3031&
• t sd -6 15 3e - 4 - 4 - 4 voltage characteriltics for all types.
tfd -:6 15 3e - 1 - 1 - 1
j.IS
* t f
c
VCc=2ooV.
L=50pH.
RC ~13.50 -6 15 ae - 0.8 - 0.8 - 0.8
*, RSJC
10 r 5
·Pul",: pulse dUl'ltion • 3OO;.s. duty factor ~2".
1- I 1- I
Cv CB value.
bcAUTlON: Thuustalnlng voltage VCEOlsus) and VCEX dv cc • 200 V. tp = 2Ops.
MUST NOT be m_ured on a curve tracer. 81 B1 = -182'
COLLECTO~ CURRENT (Ic) - A
*In IICCOI'dance with JEDEC reglrtratlon data. f Collector clamped to VCEX' t2C ... 101. .
Fig. 7 - Typical collector·to-emitter saturation
volt1lge characteristic. for all type•.
268
POWER TRANSISTORS
2N6676, 2N6677, 2N6678
I: 1
I
r 2'
.!II
0.4 0.8 1.2 1.6 COLLECTOR CURRENT (leI-A

COL.LECTOR-TO-EMlnER VOLTAGE (VeE)-Y
COLLECTOR CURRENT CIC)-A 92.CS-l0373
92CS-30174
Fig. 8 - Typical small·signal forward current Fig. 70 - Typical saturated·switching-time
Fig. 9 - TVpical output characteristics for all
transfer ratio characteristic for all types characteristics at TJ - 2tP C 8S B
tVpas.
(f~5 MHz/. function of collactor current for
elltypas.
IC· IeA
i 1001 ~~:.~CT')'IOO'C
-...
II,-Ilz-SA
"cc'1OG V
>= ',.20".
~ 1
RL-13.SA
L-!50JUt
~f
:
£ I
!~
~400
!"
j; ":!lIOO
:f
if
~ .:. '"'. ,~..

TO' " ' ' ' ' ' , ONLY 1040110 .0
10 12 14 4 • • ~ 12 •
COI..LECTDR CURRENT (,ICJ-A "UNCTION TEtlPERAT\IIE (T.,l--C
COLLECTOR CURRENT (Ie. - " t2CS-30379 1itC1-1OI10 IIC'-1011'
Fig. 77 - Tvpical saturated·switching·time Fig. 72 - Typical SIIturated4Witching-time Fig. 73 - Typical satu",ted4Wirching-time
characteristicsat TJ = 7ad'Cas characteristics at TJ - 7ad' C as 8 characteristics as e function of
II function of col/ector current function of collactor current for junction tempereture for ell types.
for all typas. all types.
~~ ...:r- '=:-0, CASE TEMPERATURE (Tcl. 25-<:

FREQUENCY et) • 1 NHI
11 4
~~ 2.
!:l~
• .....
U"'·
t:~ • ~~...17
~~ Irl -..,.'"
~3 4
r--
h.,.'
3i
;-- ~
TC SIOO·C
u:
•• 4
11./ 4
10
•• 4
,01
••
,0'
4 •
CLAMPED COLLECTOR -TO- EMITTER
VOLTAG. [VeEX (CLAMPEOI)-V 10"" IC I PEAK)
COLLECTOR-TO-IASE VOLTAGE (VcaJ-YOR nCI-SOIIJ tICS-lOIn
EMITTER-TO-IlASE VOLTAGE CVEI)-~CI_IOS8'
Fig. 76 - Oscilloscopa dioplay for normelized

Fig. 74 - TVPical common·base input (Cibol F;g. 15 -:- Max;mum operating conditions
meesu"'ment of clamped inductive
for switching between saturation
or output (Cobol capacitance switching time ftel.
characteristics for aI/ types. and cutoff for all types.
_______________________________________________________________ 269
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
40310-40314, 40316-40319, 40321-40325, 40327,

40362,40363,40537-40539
Silicon Transistors for Audio-Frequency Features:
• Hermetically-sealed packages
Linear-Amplifier Applications • Pellet bonded to header -
for greater power-handling capability
These RCA transistors are diffused-junction nominal 12-volt vehicular type to 117-volt for greeter shock resistance
silicon n-p-n and p-n-p types intended for ac-dc type_ • Freedom from second breakdown
specific applications in audio amplifiers_ The use of all-silicon devices permits more • 40319 and 40638 are p-n-p complements
They provide high-quality economical per- of 40317 and 40639, respectively
flexibility in the mechanical and electrical
formance in applications from low-level input design of amplifiers since the output heat
stages to driver and power-output stages of sinks can be held toa minimum_
5 to 50 watts_ Supply voltages range from the
N-P-N TYPES IN TO-66 PACKAGE
MAXIMUM RATINGS, Absolute-Maximum Values: TERMINAL DESIGNATIONS
40310 40312 40313 40316 40318 40322 40324 c
'~
v CEolsus) _ _ _ _ _ _ _ _ _ _ _ _ __ _ _ _ _ _ _ _ _ __ 35 60 35 v
VCERlsus) - - - - - - - - - - - - - - - - - - - - - - -- 300 40 300 300 V
At RBE ............ - .......... . 500 500 500 500 n
V EBO ..................... _..... , 2_5 2.5 2.5 5 6 2.5 6 V
IC ............ - .. _ ......... _...... 4 4 2 4 24 2 A
lB' __ ....... __ ....... _ ......... _.. 2 2 1 2 1 2 1 A
PT : JEDECTO-3
T C .;;; 25°C ........ _.......... _ 29 29 35 29 35 35 29 w
TC > 25°C, d.ratelinearlv _ ....... 0.17 0_17 0.2 0.17 0.2 0.2 0.17 wl"c n-p-n
T C = 175°C ............ - - - . - - .. . 5 6 5 w 40325
Tstg , TJ _ ........... - ............ . -65 to 200 - - - - - - - aC 40363
TL lOuring soldering):
At distances;;' 1/16 in.I1.5B mm)
from case for 105 max. - - - - - - - 235 - - - - - - - -
N-P-N TYPES IN TO-39 PACKAGE

40311 40314 40317 40321 40323 40327 40638
VCEOlsus) ....................... . 30 40 40 18 V
vCERlsus) .......•................ 300 300 5& V 92CS-27512
At RBE ....................... . 500 1000 500 n JEDEC TO-39
V EBO ............................ 2.5 2.5 2.5 5 2.5 5 5 V
IC ................................ 0.7 0.7
n-p-n p-n-p
0.7 1 0.7 1 0.7 A
lB ................................ 0.2 0.2 0_2 0.5 0.2 0.5 A 40311 40319
PT : 40314 40362
T C .;;; 25°C . _ ............. _ . . . . 5 5 5 5 5 5 5 w 40317 40537
TC > 25°C ,derate linearly ........ - - - - - 0.029 wl"c 40321 40538
TA .;;; 25°C ..•..•. - .. - ........ . 1 w 40323
40327
~~~'D:;in~'s~id~;~9'):""""""'" .
- - - - - - -65 to 200 -------
40539
At distances ;;. 1/16 in.11.58 mm)
from case for 10 5 max. . . • • • . . . .• 300 300 300 255 300 255 255
N-P-N TYPES
P-N-P TYPES IN TO-39 PACKAGE IN TO-3 c
'~
PACKAGE
40319 40362 40537 40538 40325 40363
VCBO ........................... . 35 V
VCEOlsus) ........................ --40 35 V fl!~!J-IrnI"
VCERlsus) .................•...... -70 -55 -55 70 V JEDEC TO-66

At RBE ....... _ . . . •. • . . . . . . . . .. 200 500 500 200 n
VCEVlsus) n-p-n
At V BE = -1.5 V .•.. _ •••..•....• 35 V 40310 40316
V EBO ...•.•..... - ................ -2.5 -4 -5 -5 5 4 V 40312 40318
IC' ............................... -0.7 --0.7 -0.7 --0.7 15 15 A 40313 40322
lB' ..............•.........•...•.. --0.2 -0.2 -0.2 --0_2 7 7 A 40324
PT :
T C .;;; 25°C '" _ . . . . . . . . . . . • . . . . 5 5 5 5 117 115 w
TC > 25°C, derate linearlv ........ 0.029 0.029 0.029 0.029 0.67 0.66 w/oc
TA .;;; 25°C ... _ ............... . W
TstQ ' T J .............•....•...•... - - - -65 to 200 - - - -s6to200 aC
T L lOuring soldering):
At distances ;;. 1/16 in.11.58 mm)
from case for 10 5 rna x. ...... _... ----230 -235-- °c
270 ______---------------------------------------------------------
__
. ________________________________________________________________________ POWERTRANSISTORS
40310-40314, 40316-40319, 40321-40325, 40327,

40362,40363,40!537-40539
Typa.: 40321,40323,40327, n-p-n
Package: JEDEC TO-39
ELECT'RICAL CHARACTERISTICS, At CaSII Tllmperature (TC)= 2fiOc Unless Othtlfwiss
Specified
LIMITS
CHARAC- TEST CONDITIONS 40321 40323 40327 UNITS
TERISTIC Min_ Max. Min. Max. Min. Max.
ICSO
VCS=15 V,IE=O,Tc=250C - - - 0.25 - - p.A
VCS=150 V,IE=O,Tc=150oC - 0.1 - 1 - 0.1 mA
ICER VCE=150 V,RSE=I000 n - 5 - - - 5 p.A
IESO
VSE=-2.5 V (40323) - - - 1 - - mA
VSE=-5 V (40321,40327) - 0.1 - - - 0.1
VCEO(sus) 1c=loomA* - - 18 - - - V
VCER(sus) IC=50 rnA-,RSE=I000 n 300 - - - 300 - V
VCS=4 V,IC=50 mA*(40323) - - - 1 - -
VSE VCS-l0 V,IC=50 mAo V
(40321,40327)
- 2 - - - 2
VCE=4 V,IC=50 mA*(40323) - - 70 350 - -

hFE VCE=10V,IC=20 mAo
(40321,40327)
25 200 - - 40 250 Audio
Type Prototype
fT VCE=10 V,IC=50 mA - - 100 typo - - MHz
40321 2N3439
RaJC - 35 - 35 - 30
°CIW 40323 2N2102
RaJA 117l> 40327 2N3439
* Puload: Pul. duration • 300 /II, duty factor EO; 2%.
For characteristic. curvel and tilt conditions, refar to published 'data for prototype.
Typas: 40311,40314,40317, n-p-n 40319, p-n-p

ELECTRICAL CHARACTERISTICS, At CaS/l Temperature (TC) = 2SOC Unless Otherwise
Specified
LIMITS
CHARAC- , 40317
TERISTIC TEST CONDJTlONr 40311 40314 4031eA UNITS
Min. Max. Min. Max Min. Max.
VCS=15 V, IE~O
ICSO Tc=25 DC - 0.25 - 0.25 - 0.25 p.A
Tc=15QOC 1 - 1 1 mA
IESO VSE= 2.5 V - 1 - 1 - 1 mA
VCEO(sus) 1c=100 mAo 30 - 40 - 40 - V
VCE=4 V
VSE IC·l0 mA*(40317);Ic=50 rnA
(40311,40314,403191
- 1 - 1 - 1 V
VCE(sat) IC=150 mA *, IS=15 mA - - - 1.4 - -1.4' V

Vce=4V 40 200
hFE IC=10 mA*(40317);IC= Audio
50 mA*(40311,40314,40319) 70 350 70 350 35' 200· Type Prototype
Vce=10 V(40311 );Vce=4 V 40311 2N2102
fT 100 typo 100typ. 100 typ.· MHz
(40314,40319I.1C=50 mA
40314 2N2102
RaJC - 35 - I 35 - I 35 DCIW 40317 2N2102
RaJA - 175 - 175 - 175
40319 2N4036
#0 For p-n-p devices. voltage and current are negative.
• 40319 *Pullld: Pulll duration = 300 /II, duty factor EO; 2%.
For characteristics curves and test conditions. refar to published date for prototypa,
__________________________________________________________________ 271
POWER TRANSISTORS ____________~----------------------------------------------------------~
40310-40314, 40316-40319, 40321-40325,
40327, 40362, 40363, 40537-40539
Types: 40362,40637,40538, p-n1J 40539, n-p-n
Package: JEDEC T0-39
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2fiOC Unless Otherwill8
Specified
,LIMITS
CHARAC- 40538
TERISTIC TEST CONDITIONS· 40362 40537 ~39· UNITS
Min. Max. Min. Max. Min Max.
VCE=-45 V,RBE=5oo n,
TC=25o C - - - - 10
-10
VCE=-65 V,RBE=l000 n.
ICER TC=250 C - -1 - - - - p.A
VCE=-60 V,R BE=l000 n,
TC=l50oC
- -100 - - - -
lEBO
VBE=4 V - -1 - - - - mA
VBE=5 V - - - -1 - -1
VCER(susl
IC=-l00 mA *,RaE=500 n - - -55 - -55 - V
IC=-100 mA *,RBE=10oo n -70 - - - - -
VBE
VCE=-4 V,IC=-50 mA * - -1 - -1.8 - - V
,VCE=-4 V,IC=':..500 mAo - - -' - - -2.7
1c=-50 mA",IB=-5 mA - - - -1.1 - -
VeE(satl IC=-150 mAo, IB=-15 mA - -1.4 - - - - V
IC=i-500 mA ", I a=-50 mA - - - - - -2
Audio
hFE
VCE=-4 V,IC=-50 mAo 35 200 50 300 - - Type Prototype
VCE=-4 V,IC=-500 mA * - - - - 15 90
40362 2N4036
1T VCE=-4 V,IC=-50 mA 100 typo 100 typo 100 typo MHz 40531 2N4036
ROJC - 35 - - - 13S'" oCIW 40538 2N5322
I ROJA - 175 - 175 - 175
40539 2N5320
• For ""P-n devices, voltage and current are positive .
... 40539 *Pulsed: Pulse duration = 300 /II, duty factor';;;; 2%.
For charactaristics curvas and tast oondition., rafar to published data for prototype.
Types: 40310,40312,40316,40324, n-p·n

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) =2fiOc Unless Otherwise
Specified
LIMITS
CHARAC- 40310
TERISTIC TEST CONDITIONS 40312 40316 40324 UNITS
Min. Max. Min. Max. Min. Max,
Vca=15 V,IE=O
ICBo TC=250 C - 10 - 10 .- 10 p.A
TC=lS00C - 5 - 5 - 5 mA
lEBO
VBE=-2.5 V - 5 - - - 5 mA
VBE=.-5V - - - 5 - -
VCEOlsuS) Ic=100 mAo 3S· - - - 35 - V
Audio
VCER(susl IC=100 mA ',RBE=5oo n 6011' - 40 - - - V
Type Prototype
VaE VCE=2 V,IC=l A* - 1.4 - 1,4 - 1.4 V
40310 2N3054
hFE VCE-2V~IC=1 A" 20 120 20 120 20 120
40312 2N3054
1T VCE=4 V,Ic=500 mA 750 typo 750typ. 750typ, kHz
40316 2N3054
ROJC - 6 - 6 - 6 °CIW 40324 2N3054
• 40310 # 40312 'Pulsed: Pulse duration ~ 300 /II, duty factor';;;; 2%.
For charactsristics curvas and test oonditions, ratar to published data for prototype•.
272 _______________________________________________________________
40310-40314, 40316-40319, 40321-40325,

40327, 40362, 40363, 40537-40539
Types: 40313,40318,40322, n-p-n
ELECTRICAL CHARACTERISTICS, At Case Temperawre (TCJ ; 2!PC Unless Otherwise
Specified
LIMITS
CHARAC-
TERISTIC TEST CONDITIONS 40313 40318 40322 UNITS
Min. Max. Min. Max. Min. Max.
ICEO VCE-150 V,IB=O - 5 - 5 ,- -
mA
VCE=150 V (40318).VCE=
300 V (40313), VBE=
ICEV -1.5 V, T~=250C - 10 - 5 - - mA
TC=15QOC - 10 - 10 - -
lEBO
VBE=-2.5 V - 5 - - - - mA
VBE=-6 V - .,. - 5 - 5
VCER(sus) IC=200 mA',RBE=200 n, 300 - 300 - 300 - V
L=500 mH
VBE
VCE=10 V, IC=100 mAo - 1.5 - - - - V
IC=500mA* - - - 1.5 - -
VCE=10 V, IC=500 mA * 40 - 50 - 75 -
hFE IC=100mA' 40 250 - - - - Audio
IC=20 mAo - - 40 - 40 - Type Prototype
I Sib VCE-150 V 150 - 100 - 100 - mA 40313 2N3585
ESIb VBE--4 V - - 50 - 50 - J.lJ 40318 2N3585
R6JC - 5 - 5 - 5 oCIW 40322 2N3585
* Pulsed: Pulse duration = 300 /-IS, duty factor .;;;; 2%.
For characteristics curves and test conditions, refer to published data for prototype.
Types: 40325,40363, n-p-n

Package: JEDEC TO-3
ELECTRICAL CHARACTERISTICS, At Case Temperawre (TCJ = 2!PC Unless Otherwise
Specified
LIMITS
CHARAC-
TEST CONDITIONS 40325 40363 UNITS
TERISTIC
Min. Max. Min_ Max_
ICBO
VCB=30 V, TC=250 C - 5 - - mA
TC=150oc - 10 - -
VCE=60 V,RBE=200 n,
ICER
TC=250 C - - - 1
mA
TC=l50o C - - - 10
lEBO
VBE=-5 V - 10 - - mA
VBE=-4 V - - - 5
VCEO(sus) IC=200 mAo 35 - - - V
VCER(sus) IC=200 mA',RBE=200 n - - 70 - V
VCBO IC=100 mA,IE=O 35 - - - V
VBE
VCE=4 V, IC=8 A' - 2 - - V
IC=4 A* - - - 1.8
VCE(sat)
IC=8 A', IB=800 mA - 1.5 - - V
IC=4 A',IB=400 mA - - - 1.1
hFE
VCE=4 V, IC=8 A' 12 60 - - Audio
IC=4 A' - - 20 70 Type Prototype
fT VCE=4 V,IC=3 A - - 700 typo kHz 40325 2N3055
R6JC - 1.5 - 1.5 uC{W
40363 2N3055
'Pulsed: Pulse duration = 300 /-IS, duty factor';;;; 2%.
For characteristics curves and test conditions, refer to published data for prototype.
___________________________________________________________________ 273
POWER TRANSISTORS
40406.4040~ 40410, 40407, 40409,40411

Features:
Silicon N-P-N and P-N-P Power Transistors 40406 8< 40407
For Audio-Amplifier Applications • VCEO(sus)" -50 V max. (40406)
• VCEO(sus) = 50 V max. (1W407)
RCA-40406-40411, inclusive, are diffused" 40408 are supplied in JEDEC TO-39 her· • 40406 is p·n-p complement of 40407
junction silicon n-p-n and p-n-p transistors metic packages; types 40409 and 40410 • 1 W dissipation rating
intended for use in audio amplifiers. Giving are in TO-39 packages mounted on integral
high-quality performance economically, these heat radiators. The 40411 unit, intended 40408
six devices have power dissipation ratings for use in audio output stages, is in a
of 1 to 150 W. Types 40406, 40407, and steel JEDEC TO-3 hermetic package. • VCEO(sus) = 90 V max.
• 1 W dissipation rating
40409 8< 40410
• =
VCER(sus) 90 V max. (40409)
40406 40407 40408 40409 40410 40411 • VCER(sus)" -90 V max. (40410)
VCEO('u,) .. .... . .. . . -60 60 90 v •
•
40410 is p·n-p complement of 40409
3 W free-air diSSipation rating
VCER('u,) 90 -90 90 V
Ree loon a
. . . . . ..
'"
40411
VEeo ., . ..... . . . . .... -4 4 4 4 -4 4 V =
• VCER(sus) 90 max.
Ie . . . . ... . . .. . . . -0.7 0.7 0.7 0.7 -0.7 30 A • Hometaxial-base construction
Ie .... ..... . . . ... . -0.2 0.2 0.2 0.2 -0.2 15 A
• 150 W dissipation rating
PT :
TA <:25"C ..... . . . . ... . w
T A <:50'C .. .. . ... . . '" 3 3 w
T C <:25'C . . . . .......
" 150 W
TJ ........... ... . .. . -S5to +200 'c
JEDEC TO·3
~ ;~~~i~~O~E~Op~=~VU~RE vl~';.TI~:Ij~~Cf.I'-4" COLl.ECTOR-TO-EMITTER VOLTAGE ("eEI'IOV
:200 H-
,f3"~,,
OIOOr-r-~Hr1-1-rHr-r-~Hr~~~
i ~ I I~~;- I
~F
" ~~~f--
I~rt/~trtj~~~~~-tit~ i ISO ~
i ,.
..
kff ' ~:
,0~~-H+-+-t+~-r-rrH-1~\~1H ~7 /
ffi
~
~ 4oHr-~Hr1-1-rHr-HI+I+~-4'.1-H
~
~ 7-~·"
'" --~
V "\ .~
JE'DEC
TO·39
9ZCS·Z7512
I 2oHf-H-H--++f-Hf-I--H-H--++H1
g
-0.\ wi -10 2 .. , !IOI I. ... '-'05
i ..~
//
0,1 10
,
r-\
" 10 .
COLLECTOR CURRENT IICI-rnA COL.LECTOR CURRENT Uel-IIIA
92CS-224Z7f11
Fig. 1 - Typical de beta characteristic for Fig. 2 - Typical de beta characteristics tor
40406 and 40410. 40407, 40408, and 40409.
- COLL.ECTOR-TO-ENITTERVOLTAGE (VeE)'·"'''
AMelENT TEMPERATURE iTA)' -Z'·C
1/
-.,I-----+----'~i_--Il---l
1
I
;T -6'f---~--+--
~
i-·~-1----+--··'---~~-+-~
/
TC_ .......... ~ 'I ! -'~-1----+--+---'l---+-~
II
~I
I T~
10 -0.2 -0." -0..
/ -0·8 -I -1.2
BASE-lO-EMIlTER VOL,.AGE tVBE)-V
BASE-TO-EMITTER VOLTA,Of. IVIIE)-V
' . '•• IO?IC '2CS-2242811'
Fig. 3 - Typical dc beta chanicteristics for Fig. 4 - Typical input characteristic for Fig. 5 - Typical input characteristics for
40411. 40406 and 404 70. 40407, 40408, and 40409.
274 ________________________________________________________________
POWER TRANSISTORS
40406, 40408, 40410, 40407, 40409, 40411

ELECTRICAL CHARACTERISTICS, TC = 25' Unless Otherwise Specified
TEST
LIMITS
CONDITIONS
CHARACTER· VOLT· CUR· 40406# 40409
ISTIC 40408 40411
AGE RENT 40407 40410#
Vdc Adc
VeE IC IB Min. Max. Min. Max. Min. Max. Min. Max. UNITS
ICBO - - - - - -
10- - 0.25 /1 A
IE = 0
I ,
'CEO 40 - 1 - - - - - - BASE-TO-EMtTTER VOLTAGE (vSE1- V
80 - - - 1 - - - - /1A
TC = 1500 C 40411.
40406 40 - 0.Q1 - - - - - -
40407 40 - 0.1 - - - - - - mA
40408 80 - - - 0.25 - - - -
'CER
RBE = 100 n
80 - - - - - 1 - 500 /1 A
TC= 150 C 0
80 - - - - - 0.1 - 2 mA
'EBO
VBE = -4 V 0 - 100 - 100 - 100 - 500 /1 A
VCEO(sus) O.la 0 50 b - gOb - - - - - V
VCER(sus) 0.1 - - - - - -
V
RBE = 100 n 0.2 - - - - - 90 -
VBE 10 0.001· - 0.8 e - - - - - _.

4 O.Ol a - - - 1 - - - - Fig. 7 - Typical output characteristics for
0.15a - - - - V
4 - 1 - - 40406 and 40410.
4 4a - - - - - I- - 1.2
VCE(sat)
0.15a 0.015 - - - 1,4 - 1.4 - - V
4a 0.4 - - - - - - - 0.8
40406 10 '0.1 mAa 30 200 - - - - - -
40407 10 O.OOl a 40 200 - - - - - -
hFE 40408 4 O.Ol a - 40 200 - - - -
"'"
40409·10 4 0.15a - - - - 50 250 - -
40411 4 4a - - - - - - 35 100
hfe
f = 20 MHz 10 0.05 6' - - - - - - -
fT
4 0.05 100 (tyP.) 100 (tyP.) 100 (tyP.) - - MHz
4 4 - - - - - - 800 (tyP.) kHz Fig. 8 - Typical output characteristics for

Cobo 40407, 40408, and 40409.
IE =0 10- 15' - - - - - - - pF
CASE TEt.lPERATUREITC )· 2S·C
f = 1 MHz J.JllH_ '
15°t-_t
'Sib - - - -
IT t
t = 15 nonrep
40 5' - - - A ",125
I
-u BASE CURRENT (I I- 600 mA
!j lao
ROJC - 35 - 35 - - - 1.17
°C/W ~
ROJA - 175 - 175 - 50 - - 200
100
# For pwn-p devices, voltage and current values are b CAUTION: The sustaining voltage VCEOlsus)
negative MUST NOT be measured on a curve tracer.
- VCB ' 40407 only * 40410 only V CEO(sus) should be measured by the pulse
0.5 LO 1.5 2.0 2.5 :5.0 :5.:1 4.0
8 Pulsed; pulse duration = 300 f,.tS, duty factor < 2% method (Note 'a').
CDLlECTOR-TO-EM'TTER VOl.TAGE {VCE)-V
c 40406 tested at 'C = -0.1 mA
40411.
275
POWER TRANSISTORS
40631. 41504
Hometaxial-Base Silicon N-P-N VERSAWATT Transistors

Designed for Medium-Power
Linear and Switching Applications Features:
• High dissipation ratings
The RCA-40631 and 41504 are hometaxial- Both of these transistor types are supplied in
base silicon n-p·n transistors intended for a the VERSAWATT flame·retardant plastic
wide variety of medium·power applications. package. The 40631 is supplied in the JEDEC Applications:
The hometaxial·base construction of these TO·220AA formed·lead version of this pack-
devices renders them highly resistant to age for use with TO·66 sockets; the 41504 • Series and shunt regulators
second breakdown over a wide range of is supplied in the JEDEC TO·220AB, • High-fidelity amplifiers
operating conditions. Type 40631 is intended straight-lead version. • Power·switching circuits
especially for use in driver and output stages • Solenoid drivers
in high-fidelity audio·amplifier circuits; the
41504 is a general-purpose device.

VCERIsusl 40631 41504 TERMINAL DESIGNATIONS
RBE a l00n .................................. . 46 35 V
vEBO .......................................... . 5 4 V
t:
IC ............................................. . 4 4 A
,,~_,EI
IB ............................................. . 2 2 A
PT :
At TC <0; 25°C ............................... . 36 36 W
At TC > 25°C .................. Derate linearlv _ _ 0.288 ___ wfOc
92CS-27520
AtTA <0; 25°C ............................... . 1.8 w
T J , T.tg ..••••.....••.••.•.••..••••.•.....•..•.... _-66 to +150_ °c BOTTOM VIEW
TL JEDEC TO·22OM
At distances ;;. 1/32 in. 10.8 mml from seating plane
_ _ _ 235 _ _ _
for 10. max. ............................. "" ... °c
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC' = 2!PC

TEST CONDITIONS LIMITS 92CS-ZP-i19
VOLTAGE CURRENT BOTTOM VIEW
CHARAC- 40631 41604 UNITS
Vdc Adc
TERISTIC JEDEC TO-220AB
ICER 20 - - - 5
mA
RBE = lOOn 40 - 0.5 - -
-4 0 - - - 1
mA
lEBO -5 0 - 1 - - n. J....~
- 1 COLLECTOR.TO.EatlTER
VCER(sus)
RBE = loon
O.la
0.2a
-
45
-
-
35
- - V
':-r-
..
J~ /1
'!1 I. ~
YOLTAGI!:/VCf'I_ 4 ¥
hFE
4 la - - 25 - 1 :'!;/
4 2a 20 70 - - 1(:.C
"f--.?-~r
10
la 0.05 - - - 1
.."~-A
VCE(sat) V
2a 0.2 - 1 - -
.1"7 ~~
VBE
4 la - - - 1.5
V "V 1\\
4 2a - 1.5 - -
" 1\
Ihfel
f = 0.4 MHz
ROJC
4 0.2 2
-
-
3.5
2
-
-
3.5
"
, . "10-2
, .
" , ., . , ., ,
°CIW COLLECTOR CURRENT lie) _ A
ROJA - 70 - 70
a Pulsed: Pulse duration = 300 /'S, dutv factor <0; 2%. for 40631.
276 ________________________________________________________________
__________________________________________________________________________ POWERTRANSISTORS
40631, 41504
COlLECTOR-TO.EMITTER VOlTAGE !'Ie!) ~ "V 1.8 COLlECTOR.TO.EMIT~ VOlTAGE (Yeel" H'
CASETEIIPI!RATUIIE(T)-Z5"C
'00
1
~I-I- -I.C$</
IU ~-
,
S
I
lIn < --.\
ii
~
ul--+-1-+-I.f/=+--+-1'''Ii--+--++H
•~ "1-~~k"Y" I\,
i . ~.~
r--./ ~y 1.0 / i /
/
j"
., .
I\~
r\.
! 1---+-f-H-+--+--t--H-t--t-+-H'i
0.•
...
...
~
, 0.01
I
U
I
." 1.0
I ., 10
, '1 10 4
COLLECTQRCURREMT(lC)-,."
61,OG 4 "'0 4 "1011
COUECTQIIClIIREMTI'cl-"'"
1,"
COLLECTOR CURRENT (leI - ,.
Fig. 2 - Typical dc beta characteristics Fig. 3 - Typical gain-bandwidth product Fig. 4 - Typical gain·bandwidth product
for 41504. for 40631. for 41504.
IASE·lCI·ENITTEIiI VOLTAGE {VIEI - v COLLECTOR·tO·EMITTER VOLTAGE (VeE) _ v
Fig. 5 - Typical transfer characteristics Fig. 6 - Typical transfer characteristics Fig. 7 - Typical output characteristics
for 40631. for 41504. for 40631.
COLLECTOR·TO.EMITTER VOLTAGE (VeE) - v

Fig. 8 - Typical otuput characteristics
for 41504.
277
·40850, 40851, 40852, 40854
4S0-V Silicon N-P-N Power Transistors Features:

• High-voltaga ratings for opal'lltion from power
For Off-Line Switching-Regulator Type Power-5upply Applications lines without a 11IIp-d_ transformer
• Popul. JEDEC T0-3 and T0-66 hermetic
The RCA-40850, 40851, 40852, and 40854 These devices have sufficient voltage capa- packages
are n-p-n types selected from RCA's line bility to be used as push-pull inverters or
of silicon power transistors for power-supply pulse-width-modulated inverters operating di-
applications. Their high·voltage ratings per- rectly off the 120-V power line; they can
operate as switching regulators off a 240-V
Applications:
mit operation directly off the power line
thereby eliminating the heavy and bulky line; for 120-V lines, the prototypes can be • For usa in switchinltflltllllator supplies which
6O·Hz power traasformer; their fast switch- used. feature:
ing speeds permit operation above the audio- -A substantial reduction in lize and_ight
frequency range (20 to 30 KHz) for quiet due to elimination of the 6O-Hz power
transformer _
performance and permit the use of small
ferrite-core transformers for changing volt- -Operation with a ..bstential reduction of heat
age levels_ • 5-V, off-line ..pplies with current ratings of
25,50, 100, or 200 A
Ii 3O-V, off-line ..pplias with current ratings of
MAXIMUM RATI NGS, Absolute-Maximum Values: 5,10,20, or 40 A
40850 40851 40852 40854

VCBO· 450 450 450 450 v
VCEolsusl 300 350 350 300 v
VCERlsusl
RBE';; 500. 400 375 375 325 V
VEBO ·, 6 9 9 6 V
Ic· 2 7 7 15 A
ICM
IFor 10 ms rmrx" • 5 10 10 30 A
lB· 4 4 10 A
PT ,·
Te';; 25°C. 35 45 100 175 W
TC> 25°C. Derate Iinearlv to :ZOOOc
TJ , Tstg -65 to +200 <>c
TL IDuringsolderingl:
JEDEC TO-3
At distances;;' 1/32 in. 10.8 mml
from case for 10 s mex. 230 °c 40852
40853
• Safe-operating...r.. curves for prototype davicas should be extended to the rmrximum values of collector
current for these devices.
Type 40860 (For 5-V, 25-A & 3O-V, 5-A Power Supplies)
ftackage: JEDEC TO-66.
ELECTRICAL CHARACTERISTICS,At Case Temperature (TC) = 25f'C,
LIMITS
SYMBOL TEST CONDITIONS UNITS
MIN_ MAX_
ICEV VCE = 450 V, VaE = -1_5 V - 0.2 rnA
ICEV VCE = 450 V, VaE = -1.5 V, Tc = l250 C - 2 rnA JEDEC T0-66
VCEO(sus)a IC = 0.2 A, la = 0 300 - V 40850

40851
VCER(suS)a IC = 0_2 A, RaE = 500 400 - V
VEaO IE = 5 mA, IC = 0 6 - V
hFE IC=0.75A, VCE = 10V 25 -
VCE(sat) Ic=2A,la=0.4A - 2.0 V
VaE(sat) Ic=2A,la=0.4A - 2.0 V
IS/ba VCE=I00V 0.35 - A

ES/ba L = l00pH, IC(PEAK) = 2 A; RaE = 200 0.2 - mJ
VaE =-4V
.. For characteristics curve. and te.t conditions, refar to published date for prototype 2N3585
V8 ____________________________________________________~____
POWER TRANSISTORS
40850,40851,40852,40854
Type 40851 (For 5·V, 50·A & 30·V, 10·A Power Supplies)
Peckage: JEDEC TO·66
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 2!PC,
LIMITS
MIN. MAX.
ICEV VCE = 450 V, VBE = ·1.5 V - 0.5 mA
ICEV VCE = 450 V, VBE = ·1.5 V, TC = 1250 C - 5 rnA

VCEO(sus)8 IC = 0.2 A, IB = 0 350 - V
VCER(sus)8 IC = 0.2 A, RBE = 50 n 375 .- V
VEBO IE=lmA,lc=O 9 - V
hFE IC = 1.2 A, VCE = 1.0 V 12 -

VCE(sat) IC = 4 A, IB = 0.8 A - 3 V
VBE(sat) IC = 4 A, IB = O.B A - 2 V
IS/ba VCE = 50 V 0.9 - A
ES/b8 L = 100 ,uH, IC(PEAK) = 3 A, RBE = 50 n 0.45 - mJ

VBE =·4 V
a For characteristics curves and test conditions, refer to published data for prototype 2N6079
Type 40852 (For 5·V, 50-A & 30-V, 10-A Power Supplies
Peckage: JEDEC TO·3
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 2!PC,
LIMITS
MIN. MAX.
ICEV VCE = 450 V, VBE = ·1.5 V - 0.5 mA
ICEV VCE = 450 V, VBE = ·1.5 V. TC = 1250 C - 5 rnA
VCEO(sus)a IC= 0.2A,IB =0 350 - V
VCER(sus)a IC= 0.2 A, RBE = 50n 375 - V
VEBO IE = 1 rnA,IC = 0 9 - V
hFE IC = 1.2 A, VCE = 1.0 V 12 -
VCE(sat) IC=4A,IB=0.8A - 3.0 V
VBE(sat) IC=4A,IB=0.8A - 2.0 V
IS/ba VCE = 40 V 2.5 - A
ES/b8 L = 100,uH,IC(PEAK) = 3A, RBE = 50n 0.45 - mJ
VBE =·4 V
279
POWERTRANSISTORS ________________ ~ ____________________________________________________________
40850,40851,40852,40854
Type 40854 (For 5-V, 200-A & 30-V, 40-A Power Supplies)
Package: JEDEC TO-3
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2fiOC,
LIMITS
MIN_ MAX-
ICEV VCE = 450 V, VBE = -1-5 V - 1.0 rnA
ICEV VCE = 450 V, VBE = -1.5 V, Tc = 125°C - 10 rnA
VCEO(sus}B IC=0.2A,IB = 0 300 - V
VCER(sus}B IC = 0.2 A, RBE = 50 n 325 - V
VEBO IE =5 mA,lc= 0 6 - V
hFE IC = 10 A, VCE = 4 V 8 -
VCE(sat} IC= 16A,IB = 3.2A - 3 V
VBE(sat} IC= 16A,IB = 3.2A - 3 V
IsibB VCE = 30 V 5.8 - A
ES/bB L = 50 jlH,IC(PEAK} = 10 A, RBE = 50 n 2.5 - mJ
VBE = -4 V
280 ________________________________________________________________
POWER TRANSISTORS
40871, 40872
Features:
Epitaxial-Base, Silicon N-P-N and • Low saturation voltage
P-N-P VERSAWATT Transistors •

•
•
VERSAWATT paekage
Maximum safe·operatin~area curves
Thermal-cycling ratings
General-Purpose Types for Medium-Power Switching and Amplifier Service in
Consumer, Automotive, and Industrial Applications TERMINAL DESIGNATIONS
RCA-40871 is an epitaxial-base silicon n-p-n regulators and inverters and driver and out-
transistor. RCA-40872 is an epitaxial-base put stages of high-fidelity amplifiers. These c
(FLANGE)
p-n-p transistor. These devices are intended plastic power transistors are supplied in the
for a wide variety of medium-power switching JEDEC TO-220AB VERSAWATT package.
and amplifier aoplications, such as switching
E
I
BOTTOM VIEW 92C5-27519
JEDEC TO-220AB
MAXIMUM RATINGS. Absolute--Msximum Values:
N-P-N 40871
P-N-P 40872·
COLLECTOR-TO-EMITIER SUSTAINING VOLTAGE:
With external base·to~emitter resistance (RaE) "" 100 n VCER{sus) 120 v
With base open. . • . . . . . VCEO{su,) 100 v
EMITIER·TO-BASE VOLTAGE • • . VEBO V
COLLECTOR CURRENT (Continuous) Ic A
BASE CURRENT {Continuousl. • IB A
At case temperatures up to 2SoC . 40 w
At ambient temperatures up to 25OC. 1.8 W
At case temperatures above 25°C. . Derate linearly at O.32W{OC
At ambient temperatures above 25°C Derate linearly at 0.0144 W/oe
TEMPERATURE RANGE: = 4~~~~-~~~~~~
Storage & Operating (Junctionl . . -65 to 150 °c ;;
LEAD TEMPERATURE (During Soldering):
At distance 2!' 1/8 in. 13.17 mm) from case for 10 s max. 235· °c
~
* For p-n-p device, voltage and current values are negative.
NUMBER OF' THERMAL. CYCLES
ELECTRICAL CHARACTERISTICS, At CaS8 Temperature (TcJ = 2!PC, Unless Otherwise Specified Fig_ 1 - Therma/-cyc/ing ratings for
both types_
CHARACTERISTIC SYMBOL VOLTAGE CURRENT 40871 UNITS
CASE TEMPERATURE (Tel' 25·C
V de A de 40872' & IC MAX. ICONTINUOUS)
VCE VEa IC la MIN_ MAX_

~ : ~ c1's"~--II-H+I-+I-++H
--~lh"':~¥-1~~~IE
. I~m
With external base-to
110 - 1 t-- ISib L.IMITEO
ICER mA ~
emitter resistance
(RBEI- lOon
Emitter-Cutoff Current lEBO 5 0 - 1 mA
! :~-~--~~~~~~~t--+--+-++1
Sustaining Voltage: VCEO{susl 0.1 0 100 - V
With base open '~~-1-+~--+-~Hrtr--t-~~~
001
With external base·
to·emitter resistance VCERlsu,) 0.1 120 - V
COL.L.ECTOR-TO-EMITTER VOLTAGE (Vce)- v
(RBEI - 100 n
4 1· 50 250 Fig_ 2 - Maximum operating areas for
DC Forward~Current 40871_
hFE 4
Transfer Ratio
4
4 l' - 1.5
Base·to·Emitter Voltage Vae 4 - - V
4 - -
la 0.1 - 1.0
VCE!sat) V
Saturation Voltage
Gain-Bandwidth Product IT 4 0.5 4 - MHz

"'CEO MAX.;'~IO,?V
Thermal Resistance : /
I
Junction·to-Case RO JC - 3.125 1
Junction-to-Ambient RO JA
•. For p-n-p devices, voltage and current values are negative.

70 °CIW ~O.OI
. .. . .. I . I..
,I
-10 -100
COL.LECTOR -TO-EMITTER VOLTAGE (VcEI-V
-1000
a Pulsed: Pulse dUration =300 ",5, duty factor = 0.018. ,2C8-228I'

CAUTION: The sustaining voltages VCEOlsus) and VCER(sus) MUST NOT be measured on a curve tracer.
40872_
---------------------------------------------------------------- 281
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
40871, 40872
COLlECTOR-TO- EMITTER VOL.TAGE IVeE)' 4 II
4 8.0
COLLEcTOR-rc·E~!TTER
12
VOLTAGE \IIeEI-V
0'
BASE-fO-EMITTER IIOLTAGEIVSEI-\I
I.' 0,01
... 0.1 I
. .. 10
Fig. 4 - Typical output characteristics Fig. 5 - Typical transfer characteristics Fig. 6 - Typical de beta characteristics
for 40871. for 40871. for 40871.
TEMPERATURE (T<;)t·25·~;!.:: :jfJ :1:11111: 8 COLLECTOR-TO- EMITTER VOI-TAGE ("C£)'4 \I

'r;; ::;; ';;;,;;::,;::: !t' P:illll: COLLECTOR-TO-EMITTEFt \/OLTAGEIVC EI.-4 II
111+
. ..
, I
,
."
COLLECTOR-lO-EMITTER VOLTAGE (VCE)-V
." -0.5 -I -1.5
BASE-lO-EMITTER 1I0LTAGE(IISE '-V
-~
-0,01
. .. -0-)
. .. -I
-10
Fig. 7 - Typical output characteristics Fig. 8 - Typical transfer characteristics Fig. 9 - Typical de beta characteristics
for 40872. for 40872. for 40872.
282 _____________________________________________________________________
POWER TRANSISTORS
BD142
Hometaxial-Base, High-Power Silicon N-P-N Transistor
Rugged General-Purpose Device For Commercial Use Features:
The RCA·BD142 is a hometaxial-base diffused-junction silicon • Maximum-safe-area-of-operation curves

Applications:
n-p-" transistor intended for a wide variety of intermediate- • Low saturation voltage
power and high-power applications. It is especially suited for • High dissipation rating
use in audio and inverter circuits at 12 volts. • Thermal-cycling rating curve
• High·fidetity amplifiers
• Power-switd1ing circuits
The 80142 is supplied in a JEDEC TO-3 hermetic steel • Solenoid drivers
package. • 12·V aU,dio and inverter circuits TERMINAL DESIGNATIONS

COLLECTOR· TO-BASE VOL TAGE
With base open
With base reverse bias VBe = --1.5 V
VCBO
VCEOhus)
VCEV(susl
.
50
50
v
V
V
V
EMITTER·TQ-BASE VOLTAGE VEBO
CONTINUOUS COLLECTOR CURRENT ,S A
'e
CONTINUOUS BASE CURRENT
TRANSISTOR DISSIPATION.
At case temperatures up to 25°C
At case temperatures above 2SoC
'.
PT
117
Oerate linearlv to 200D C
W
A
JEDEC TO·3
TEMPERATURE RANGE:
Storage and Operating (Junction) -66 to +200
PIN TEMPERATURE (DtIringSolderingl:
At distances ~ 1/32 in. (0.8 mmJ from seating plane for 10s max. 235
ELECTRICAL CHARACTERISTICS, At ease Temperature (Tel - 25"c Unless Otherwise SpfJeified.

,ao
TEST CONDITIONS
CHARACTERISTIC SYMBOL VOLTAGE CURRENT LIMITS UNITS

Vd. Ad<

VeE v.. v•• 'e '. MIN_ MAX.
With base-eminer junction ICEV 40 --l.S

mA
reverse-biased
'0
EmItter Cutoff Current lEBO mA '10" ''Os
NUMeER 0' THERMAL CYCLES
Sustaining Voltage.
W,th base open VCEOlsusl 0.2 45 Fig_ 1 - Thermal-cvcling rating chart
WIth base·emltter junction -, 5 0.' 50
VCEVlsusl
reverse·blased
DC Forward Current
Transfer Ratio hFE 4' 12.5 '60
Base·lo·Em'ller Voltage 4' '_S V

VB'
Collector·to·Emltter
Saturation VOltage VCE(<;atl 4' 0.4 1.' V
Common·Em,ner. Small· CCl.LECltII- TO_EMITTER VOLTAGE (VC£)-4 v

Slgnal.Short·ClrCuit, CASE TEMP£RATURE ITClaZI5-C
Ratio
h" '0
r I
t---.
(f - 1 kH71 } I.
Magnrtude of Common· I.
V I\.
Em'tter. Small.Slgnat,
Short,Clrcu't. Forward Ih',1 I II
J
I\.
! ..
Current Transfer Ratio "\
If - O.4MHzI
l'\.
Gam-BandWidth Product 'T 800 'H,
•
Forward·Blas Second-Break
down Collector Current It ~ 1 51
Thermal Resistance
'Sib
ROJC
39
I.S
A
"c/W '01 .,
COI..LEC1OR CUM!NT tiel-A
, . 10
(Junctlon.te·Case)
Fig_ 2 - Tvpical gain-bandwidth product_

• Pulsed: Pulse duration = 300 /.IS. duty factor 2%.
283
POWER TRANSISTORS
8D142
Fig. 4 - Typical transfer characteristics.
Fig. 3 - Maximum safe area of operation.
.
COI..LEClOR-lO-EMITTER VOlTAGE (Vee). 4 v
l'
i A--:i.~~<
7 ~ V.,,·c
~
i~
.~
IASE-TO-EMITTER VOl.TAOI:lVaP-v.cIHZS07R1
I
II
0.01
, • II
0.1
• I
COLLECTQA CURRENTt7.cl-A
I
1.0
, • II
10
Fig. 5 - Typical input characteristics. Fig. 6 - Typical output characteristics. Fig. 7 - Typical dc beta characteristics.
284 ____________________----------__---------------------------------
POWER TRANSISTORS
80181, 80182, 80183

Features:
Hometaxial-Base. High Power Silicon • Maximum safe-araa-of-operation curves
N-P-N Transistors • Low saturation voltagll

• HlgII dissipation ratings
Rugged, Broadly Applicable Devices For Commercial Use • Thermal-cycling rating curves
RCA·BD181, 80182 and 80183 are silicon n-p-n transistors

intended for a wide variety of high·power applications. The Applications:
hometaxial-base construction of these devices renders them • Sarin and shunt regulaton
highly resistant to second breakdown over a wide range of
operating conditions.
• Power1witehing circuib
These transistors are supplied in a JEDEC TO·3 hermetic
• Solenoid driven
steel package.
BD181 BDI82 BDI83

COLLECTOR-TQ-BASE VOLTAGE ....... _. _.................... _. VCBO 55 70 B5 v
COLLECTOR-TQ-EMITTER SUSTAINING VOLTAGE,
With external base-te-emitter resistance (ReEl = 100 n ............... . VCERI,u,) 55 70 B5 V JEDECTO·3
With base open .............................................. . VCEO(su,) 45 60 60 V
EMITTER-TO-BASE VOLTAGE ___ . _........ _. _.... ____ . _........ _._ VEBO V
CONTINUOUS COLLECTOR CURRENT . _. __ .............. _........ _ IC 15 15 15 A
CONTINUOUS BASE CURRENT _...... _... _......... _._ IB 7 A
At case temperatures up to 2S:C ....................... . 117 117 117 w
At case temperatures above 25 C ................................. . ..-..-- See Fig. 2 _ _
TEMPERATURE RANGE:
Storage and Operating (Junction) ................................ . ~ -65 to +200 ---.. °c
PIN TEMPERATURE lOuring Soldering)'
At distances ~ 1/32 in. (0.8 mm) from seating plane for 105 max. . ••...• ~ 235 _______ °c
ELECTRICAL CHARACTERISTICS At Case Temperature (Tel = 25°C Unless Otherwise Specified

CUR-
CHARACTERISTIC SYMBOL VOLTAGE RENT UNITS
Vdc Adc B0181 B0182 B0183
V CB V CE V EB V BE Ic IB MIN. MAX. MIN. MAX. MIN. MAX.
Collector-Cutoff Current: 45 0 - 2 -
With emitter open and ICBO 60 0 - - - 5 - -
TC = 200°C 80 0 - - - - - 5
With base-emitter junction 45 -1.5 1 mA
reverse-biased I CEX 60 -1.5 - - - 1 - -
BO -1.5 - - - - - .-
Emitter-Cutoff Current lEBO 7 - 5 - 5 - "
5 mA
Collector-ta-Emitter Sustaining Voltage:

With base open VCEOlsus) 0_28 0 45 - 60 - BO -
(R BE )=100 n VCER(sus) 0.28 55 - 70 - B5 - V
4 4a 20 70
DC Forward Current Transfer Ratio hFE
4 3" 20 70 - - 20 70
Base*to-Emitter Voltage V BE
4 3" - 1.5 - - - 1.5
V
4 48 - 1.5 - -
Collector-to-Emitter Saturation
VCE(sat)
48 0.48 - - - 1 - -
Voltage 3" 0.3" - 1 - - - 1 V
Magnitude of Common-Emitter, Small-
Signal, Short-Circuit. Forward Current ihlei 4 1 2 - 2 - 2 -
Transler Ratio II" 0.4 MHz)
Gain-Bandwidth Product IT 1 BOO - BOO - 800 - kHz
Common-Emitter, Short-Circuit, Small*

Signal, Forward Current Transfer f hle 4 0_3 15 - 15 - 15 - kHz
Ratio Cutoff Frequency
Forward-Bias Second Breakdown Collector

Current It ~ 1 s) ISlb 30 3.95 - 3.95 - 3.95 - A
Thermal Resistance (Junction-ta-Case) ReJC - 1.5 - 1.5 - 1.5 °C/W
a Pulsed: Pulse duration = 300 IJ,S. duty factor = 1.8%.
285
POWER TRANSISTORS
8D181, 80182, 8D183
c
1u
.
H
.
OR
III
L:
:::)
u
Fig. 2 - Thermal cycling rating chart for
all types.
e
u
~
....
S
I
BASE-TO-EMITTER VOLTAG£IVIEI-Y
....-....
10
COLLECTOR-TO~EiIIIITTER VOLTAGE IVCf)-V Fig. 3 - Typical transfer characteristics
for all types•
COLLECTOR-TO-EMITTER VOL.TAGE (VeE!- 4 v

CASE TEMP[II:ATUR£ (Tel 0 2S- C
lao
i #f:, \10'
.. t':J° C
, ., ~~~
i '"~~
6
300
~ "-
I
00
2 f-- f--
BASE-TO-EMITTER YOLTAGEtVIiE-V
~ ~ ~ ~ ~ ~
CCLLECTOR-TO-EMITTER VOLTAGE (VeEI-V
ro ~
g
0.01
. ... , . ..
0.1
COLL.ECTOR CURRENT (le)-A
1.0
, ..10
geCS-I2~1Rl
Fig. 4 - Typical input characteristics Fig. 5 - Typical output characteristics Fig. 6 - Typical dc·beta characteristics
for 80182. for 80182. for 80182.
.~
li
i ~,~-+--~~~-+--~~~-+--~~
i
~ 40
,... 0
~ -~---;t;'"t TC'oU·C
~ ~~~~'~~+-~+4+-~~~~~~
r~1
BASE-lO-EMITTER VOLTAGE (Varl-V

COL.LECTOR-fO-EMITTER VOLTAGE IVeEI-V
g
0.01
4 ,.
0.1
2
1.0
COLLECTOR CURRENT (:lei-A
4. I ... 10
92CII-""41
Fig. 7 - Typical input characteristics for Fig. 8 - Typical output characteristics for Fig. 9 - Typical dc·beta characteristics for
80181 and 80183. 80181 and 80183. 80181 and 80183.
286 ____________________________________________ ~------------------

POWER TRANSISTORS
80181, 80182, 80183

CASE TEMPERATURE (TC)-Zi5·C
... 0.1
COLLECTOR CURRENT !:Icl-A
30
2468
10
2. "68
100
Ii! 468
II<
Ii! 468
101(
EXTERNAL. SASE-lO-EMITTER RESISTANCE (RBE1-O
2. 46a
1001(
BASE-TO-EMITTER VOLTAGE (VaEI-V
Fig. 10 - Typical gain-bandwidth product Fig. 11 - Sustaining voltage vs. base·to·emitter Fig. 12 - Minimum reverse·bias second·breakdown
for all types_ resistance for all types. characteristics for all types.
287
POWERTRANSISTORS __________________________________________________________________________________
B0239, B0239A, B0239B. B0239C B0240, B0240A,B0240B, B0240C

Epitaxial-Base Silicon N-P-N and P-N-P
• 30 W at 250C case temperature
For Power-Amplifier and High-Speed-Switctiing Applications
• 4·A rated collector current
These RCA devices are epitaxial-base silicon n-p-n and All these transistors are supplied in the JE DEC TO-220AB • Min. IT 01 3 MHz at 10 V. 200 mA
p-n-p transistors; they differ only in their voltage ratings, straight-lead version of the VEASAWATT package. Optional
These transistors are intended for a wide variety of switching lead configuration'l are available upon request. For infor-
and amplifier applications such as series and shunt regulators, mation, contact your nearest RCA International Sales
and driver and output stages of high-fidelity amplifiers. The Office.
BD240-series p-n-p power transistors are complements of B
the n-p-n devices in the 80239 serles.
(FLA~GE)

80239 80239A BD239B BD239C
BD240· BD240A· 8D240B· B024OC· t2CS-27519
COLLECTOR-TO-EMITTER VOLTAGE,
BOTTOM VIEW
resistance (RBEI '" 100 n .. VeER 55 70 90 115 V JEDEC TO-220 AB
With base open. VeEO 45 60 80 100 V
EMITTER-TO-BASE VOLTAGE - VEBO 5 5 5 V
CONTINUOUS COLLECTOR CURRENT IC A
CONTINUOUS BASE CURRENT. - - IB A
TRANSISTOR DISSIPATION, PT
At case temperatures up to 25 e
0 30 30 30 30 w
At ambient temperatures up to 25 0 e . 2 w
At case temperatures above 250 e . Derate linearly to 150°C
TEMPERATURE RANGE,
Storage & Operating (Junction) .. __- - - - - - -65 to 150 ------_+
At distance 1/8 in. (3.17 mm) from
case for 10 s max . __------------- 235------------0.
• For p·n_p devices, voltage and current valUeS are negative.
10 3 ' I 10 4
ELECTRICAL CHARACTERISTICS at CIISfI Temperature ITC) =25"C Fig_ 1 - Thermal-cycling ratings for all types.
TE$T CONDITIONS. LIMITS COLLECTOO-TO~EMITTER VOLTAGE {VeE}- 4.

f400
CAS~ TEJPER~JI {TeI2~.c

VOLTAGE CURRENT 8D239 BD239A 8D239B BD239C
CHARACTERISTIC SYMBOL UNITS 9
Vd. Ad. 80240· BD24OA· ~D240at BD24OC· Ii
III: 200
VeE VaE 'e 'a MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. ffi
~
~
Collector Cutoff Current: -30 0 -0.3 -0.3 ~ 100
ICEO -GO -0.3 -'0.3
Wit'" base open ~ 80
-40-(:
mA
60....-
~
!
With base· to-emitter -46 -~ 0.2
junction short·circuited -GO - 0.2 40
"'" ~
ICES -SO -0.2
-
i.
-100 -0.2
20
Emitter Cutoff Current lEBO -1 -1 -1 -1 rnA
. . ... . ..
Breakdown Voltage: 0.03" 0 -46 -GO -SO -100
g '0
-
VBR(CEO)
With base open
0.01 0.1 I 10
DC Forward-Current -4 -o.2a 40 40 40 40
Transfer Ratio hFE -, -1' 1. 15 15 15
COLlECTOR CURRENT tiel-A !JiCS-201!'!'
Base-to-Emltter Voltage VSE -4 -1' _1.3 _1.3 _1.3 _1.3 Fig. 2 - Typical dc beta characteristics for
Collector·to-Emitter _1" BD239-series types.
Vce(sat) ~O.2 -0.7 -0.7 -0.7 -0.7
Saturation Voltage
Common·Emitter
Small·Signal Short-
Circuit Forward-
h,. -10 0.2 20 20 20 20
(f = 1 kHz)
Magnitude of Common
Emitter Small-Signal
Short·Circult Forward- Ih,·1 -10 "_2
(f= 1 MHz)
Thermal Resistance'
Junction-to-Case ROJC 4.17 4.17 4.17 4.17
°C/W
Junction·to·Ambient ROJA
• For p-n-p devices. voltege and currant values ora neQlltlVIll.
apulsed: Pulse duratiOI1 = 300 ),IS. duty factor = 2%.
62.5 62.5 62.5 62.5
-0.01 -0.1
COlLEeT~
...
eURRENT {leI-A
-I

BD24o-series types_
288 __________________________________________________________________
POWER TRANSISTORS
B0239,B0239A, B0239B, B0239C, B0240, B0240A, BD240B,BD240C
Fig. 4 - Maximum safe operating areas for Fig. 5 - Maximum safe operating areas for
BD239-series types. BD240·serie~ types.
289
POWER TRANSISTORS ______________________________________________________________________________
B0241,B024iA, B0241B, B024ic, B0242, B0242A, B0242B, B0242C

• 40 W at 25°C case temperature
For Power·Amplifier and High·Speed·Switching Applications
• S-A rated collector current
These RCA devices are epitaxial-base silicon n-p-" and All these transistors are supplied in me JEOEC TO·220AB
p-n-p transistors; they differ only in their voltage ratings. straight·leadvenionaf th~ VERSAWATT pa"ckage. Optional • Min. fT of 3 MHz 1110 V. 500 mA
These transistors are intended for a wide variety of switching lead configurations are available upon request,' For infor-
and amplifier applications such as series and shunt regulators, mation •. contact your nearest RCA International Sales
and driver and output stages of high·fidelity amplifiers. The Office: TERMINAl DESIGNATIONS
BD242-seriBs p-n-p power transistors are complements of a
the n-p-n devices in the '80241 series.
MAXIMUM RATINGS, Absolute-Maximum Valuu:

l1li241 BD241A B0241' aD241C t2CS-ZTSI9
arna> 8D242A· BD2428· a_
COLLECTOR·TO·EMITTER VOLTAGE: BOTTOM VIEW
With external base·to-emitter JEDEC TO-220 AB
resistance (ReEl"" 100 Sl .. , ....... VeER 55 70 90 115 V
With base open .' .. ,., .... , ....... VeEO 45 60 80 100 V
EMITTER·TO·SASE VOLTAGE ........ VESO 5 5 5 V
CONTINUOUS COLLECTOR CURRENT IC 5 5 5 A
CONTINUOUS SASE CURRENT. . . . . . IS A
TRANSISTOR OISSIPATION: PT
At case temperatures up to 25°C .". 40 40 40 40 W
At ambient temperatures up to 25°C. 2 2 2 2 W
At case temperatures above 25°C ....
TEMPERATURE RANGE:
Storage at Operating (Junction) ..... . _ - - - - - -65'0150 - - - - - - . °c
LEAD TEMPERATURE lOuring Soldering):
case for 10 5 max . . . . . ,., ....... . _------2~--------. °C
• For p·n·p device', wolta" and current ",.luM .re negative.
NUMIER Of' THERMAL. CYCL.ES
Fig_ 1 - Thermal-cycling ratings for all types.

ELECTRICAL CHARACTERISTICS or C... Tem".,.,.". ITcJ ·:J60c COlL.ECTOR-TO-EMITTER VOL.TAGE (VeEl- 4V
f400
TesT CONDITIONS. LIMITS CAs~ TE1"l!! (TC1~12sec
-"
; 200
VOLTAGE CURRENT
Ad.
IDZ41
111120z0
BD241A B0241. 8D241C
BDzac· UNITS
ffi 1';;:c
Vdc
VCE V aE MIN. MAX.
l1li2428"
'100
~
..
'C 'a MIN. MAX. MIN. MAX. MIN. MAX. 00 ~40-C
60i---"
i C\.
.
Collector Cutoff Current: 30 0 0.3 0.3
ICEO
Wi,th base open 60 0 0.3 0.3
With base·to-emitter
junction short-circuited
ICES
60
80
0.2
0.2
0.2
mA ~
i• 20 " 1'-.\1:\
'f\-
. . .. . ... . . ..
100 0.2
lO
g
.
Emitter Cutoff Current leso -5 mA
Collector·to·Emitter 10
CDI
Breakdown Voltage: VSR(CeOI 0.03' 0 60 80 100 V COL.LECTOR CURRENT !lCl-A
With base open
DC Forward·Current I" 25 2. 25 25
Transfer Ratio hFE 3' 10 10 10 10
Base·to·Emitter Voltage V BE 3' 1.8 1.8 1.8 1.8 V BD241-series types_
Collector·to·Emitter 1.2 1.2
3' 0.6 1.2 1.2 V COLL.ECTOR-TO-EMITTER VOL.TAGE tvCElo-4V
Saturation Voltage
VCEhat
f<oo
Common·Emitter
Small·Signal Short·
hf• 10 0.5 20 20 20 20 i.oo w1 TEMlltERkll tTcllllSeC
Circuit Forward· ffi 1';;:ct--

~ 100
If= 1 kHz}
! 00 -40-<:
Magnitude of Common IO~
I:\.
Emitter Small-8ignal
Short·Circuit Forward·
Ihf·1 '0 0.5
i '0
.......
~~
If= 1 MHz}
Thermal Resistance: I• '0
1\
Junction·to-Case
Junction·to·Ambient
ROJC
ROJA
Bpulsed: Pulse duration = 300 j,IS. duty factor'" 2%.

3.125
62.5
3.126
62.5
3.126
62.5
• For p·n·p _Ie_. wolt •••nd current w.lu.s .r. n... tlwe.
3.125
6'"
°elW g 10
-0.01
. . . . ...
I.
~O.I
•
-I
I
COLLEtTO" CURItENT UC1-A

-10
IICI-ZOIBI
Fig. 3 -' Typical dc beta characteristics ;or

BD242-series types.
~o _______________________________________________________________________________________
POWER TRANSISTORS
B0241, B024iA, B0241B, B0241C, B0242, B0242A, B0242B, B0242C
COLLECTOR "TO -EillflfTEW VOLTAGE 'Va;:I-1i 1Ie'- not"

-10
. .. ·100
COLLECTOR-TO-EMn'TER VOLTAaE l'tIcI:I-V
...-,,..
Fig. 4 - Maximum safe operating areas tor Fig. 5 - Maximum safe operating areas for
BD24T-series tvpes. BD242-series tvpes.
291
POWER TRANSISTORS
BD243, BD243A, BD243B BD243C,BD244, BD244A BD244B, BD244C

• 66 W at zoe case temperature
For Power·Amplifier and High·Speed·Switching Applications • 7-A rated collector current
• Min. fT of 3 MHz at 10 V. 500 mA
These RCA devices are epitaxial-base silicon n-p-n and All these tfansi5tor~ are supplied in the JEOEC TO-220A8
p-n-p transistors; they differ only in their voltage ratings. straight-lead version of the VERSAWATT package. Optional
These transistors are intended for I wide variety of switching lead configurations are available upon request. For infor- TERMINAL DESIGNATIONS
and amplifier applications such as series and shunt regulators, mation, contact your nearest RCA International Sales
and driVer and output stages of high-fidelity amplifiers. The Office.
B0244'-series p-n-p power transistors are compl,ments of
the n-p-n devices in the' 80243-$Irles. (FLA~GEI
MAXIMUM RATINGS,AblOlut,-Max;mum Value,;
With external base·lo-emitter
resistan~ (RBE) '" 100 11 - VeER SS
-_.
70
BD2GB
802448-
90
BD243C
BD244Ce
115 V
BOTTOM VIEW
JEDEC TO·220 AB
92cS-27519
With base open . . . VCEO 4S 60 80 100 V

EMITTER·TO·BASE VOLTAGE, ' VEBO S 5 5 V
CONTINUOUS COLLECTOR CURRENT IC U 8.11 8.11 8.5 A
CONTINUOUS BASE CURRENT. . IB 1 1 A
TRANSISTOR DISSIPATiON: PT
At case lemperalures up to 25°C . 86 86 86 86 W
At ambient temperatures up 10 250C . '2 2 2 2 W
At case'temperatures above 25°C. Derate Imearly to 150°C
TEMPERATURE RANGE:
Storage &: Operating (Junction). -65 to 150 °c
LEAD TEMPERATURE (Dur;ng Solde,;ngl:
case for 10 s max. 235 °c
'0' '0'
NUMSER OF THERMAL CYCLES
'0'
Fig. 1 - Thermal-cycling ratings for all types.
COLLECTOR- TO-EMITTER VOLTAGE' VCE'- 4V

~400
ELECTRICAL CHARACTERISTICS ot c... T."",.",tu... ITcI =25'JC

•
1200
CAJE TEl.ER~TUE tTC J25-C
~ ]";;":c
:i! 100
TEST CONDITIONS. LIMITS ~ .0 -40·C
60
CHARACTERISTIC SYM80L
VOLTAGE CURRENT 10243 BD243A BD243B BD243C
UNITS
~ 40~ 1...'\
10244· 802"""- BD244Be 8024«:-
I
Vda Ada ......
I"\'\~
With bale open 'CEO
VCE VBE 'C
30
80
MIN. MAX.
'. 0.7
MIN. MAX.
0.7
MIN. MAX.
0.7
MIN. MAX.
0.7
20
r\
.. . . . ..
mA
g '0
With blse-to-emiutr
junction short-circuited
45
80
0.'
0.'
• ,
IceS 80
eo • 0
0.' 0.' '0
100 0 0.' COLLECTOR CURRENT tIc'-A
'no -5 mA
Collector·Ia·Emitte, Fig. 2 - Typical dc beta characteristics for
Breakdown Voltage: 0.03' 0 45 80 ,80 100 V
VSRfCEO). BD243-series types.
, With ba. open
DC Forw.rd·Current 0.3' 30 30 30 30 COlLECTOR-TO-EMITTER YOLTAGE tVCEI'-4V
Trenlfer R.tio "FE 3' I. I. IS IS ~.OO
ea...to-Emit.... Voltage V BE fi' V •=: 200
CAsl TEMIp£R~~~ ITCI!125'"C
Coll.ector·to.Emitter
Satur.tlon Voltage Vce 1ad fi' 15 1.5 1.5 1.5 V
~
~ ];:e
~ 100
Common·Eminer ~ eo -40·C
Small-8ign.1 Short·
10 0.5 20 - 20 20 20 60
I 40- ~
Circuit Forw.rd· "I.
Current Transfer R.tio
(f. 1 kHz) .........
~'\~
Metjnitude of Common
Emitt.r Small-8ignal
1"'·1 10 0.5 i. 20
\
'0
. . .. . . . . ..
Short-Circuit Forward·
Current Tr.nlfer R.tio
g
(f-1MHzl • 0
-0.01 -0.1
Thermal Resist.nce: COLLECTOR CURRENT \lCI-A
Junction-to-Case R9JC 1.92 1.92 1.92 1.92
·CIW
Junction-to-Ambient 62.5. 62.5 62.5 62.5
"BJA Fig. 3 - Typical dc beta characteristics for
lpull8d: Pulse duration· 300 "" duty factor .. 2%. - For p.n-p davie... vol,....nd curren' y.IUM .r. n.p,ive. BD244-series types.
292
POWER TRANSISTORS
B0243, B0243A,B0243B, B0243C, B0244, B0244A, B0244B, BD244C
-'0
COLLECTOR-lO-EMITTER VOL.TAGE IVcE)-V
COLLECTOR-TO-£fIIIITTER VOLTAGE 1Vc£I-V
Fig. 4 - Maximum safe operating areas for Fig. 5 - Maximum safe operating areas for
BD243-series types. BD244-series types.
293
Ii
I
!
POWER TRANSISTORS
80277
Features:
7-A, 70-W, Epitaxial-Base, Silicon P-N-P • Thermal-cycling ratings
• Maximum·nf••rn-of-opermon cum
VERSA WATT Transistor • Low laturation "oItage
• VERSAWATT package Imolded silicone plestic)
For Applications in Series and Shunt Regulators • High power-dillipation capability
Type 80277 is an epitaxial-base silicon p-n-p transistor The 80277 is useful in series regulators and shunt regu-
supplied in the JEDEC TO-220AB straight-lead VERSAWATT lators because of its low saturation voltage and high power-
package. It is also available in the TO-220AA package (leads dissipation capability_· It is also useful as a replacement for TERMINAL DESIGNATIONS
formed to fit a TO-66 5Ocketl: to order this version, specify germanium p-n-p transistors in many applications.
formed lead No. 6201.
8
c
MAXIMUM RATINGS, Absolute-Maximum ValufI,:
IFL.5.GE)
COLLECTOR·TO·BASE VOLTAGE:
With emitter open. . . . . . . . VCBO --45 V
With base open. . . . • . VCEO --45 V
EMITTER·TO·BASE VOLTAGE: BOTTOM VIEW 92($·2751,
With collector open • • • • VEBO --4 V
COLLECTOR CURRENT IContinuous) IC -7 A TO·220AB
BASE CURRENT IContinuous). . IB -3 A
,nt_,iii ~:
At case temperatures up to 25°C. 70 w
At case temperatures above 26°C. Derate linearly at 0.56 Wf'C
TEMPERATURE RANGE:
Storage & Operating (Junction) . . . . • . . • . ~6tol50 OC
tzCS-2'T520
LEAD TEMPERATURE lOuring Soldering): BOTTOM VIEW
At distance;;' 118 in. (3.17 mm) from case for 10 smax•. 236 OC
TO·220AA
ELECTRICAL CHARACTERISTICS, At Care T _ ITc! = 2iPC unl...."oc/f/«lotherwi..
TEST CONDITIONS
VOLTAGE CURRENT LIMITS
V de Ade
Vce Ves VEa Ie IB IE MIN. ~AX.
Collector Cutoff Current: ,uu. P,..IM4XI'70 'II

With emitter open -45 0 - -0.1
:~~A
ICBO
With emitter open and TC = 160°C -40 0 - -2.0 mA
With base open

Emitter Cutoff Current:
ICEO -30 0 - -1.0
2 i'"~ ~ ~~'
With collector open
Collector-to-Emitter Breakdown Voltage:
leBO --4 0 - -1.0 mA 10 r--If\
'r--k
,\'\ ~.,
1'<0",
V(BRICEO -0.1" 0 --45 - V II--~
· 1l
With base open
1\ ,\.~
-1.75" - " \
~
~
~
Base-to-Emitter Voltage VBE -2 1.2 V
'I-~
.~<~c-
DC Forward-Current
\~
. \.. ~~', . ..
Transfer Ratio hFE -2 -1.75" 30 150
rg
Collector-to-Emitter I
,
Saturation Voltage VCE(s.tl -1.75- -0.1 - -0.5 V 10' 10' 10'
Gain-Bandwidth Product fT --4 -0.5 10 - MHz NUMBER OF THERMAL CYCLES 9Ks-nHS
Thermal Resistance: Fig. 1 - Thermal-cycling ratings.

Junction-to-Case ROJC - 1.78
oCIW
Junction-to-Ambient ROJA - 70
• Pulsed: Pulse duration" 3OOl'S, duty factor 0( 2%.
I CASE TEMPERATlRE (TClo2S*C

• -, ,. 1 COLLECTOR-TO-EMITTER VOLTAGE IYcE,.-4 V 1. 00
COLLECTOR-TO-EMITTER VOLTAGE (VCE" - 4 V
• -I
I i 200
CAJE TEilTli ITc'!le.c
~-s
~ ,..... ~--
"-t-
~ Ij,~--+r'-··-·-··~~;----~-------
8 •
5
~
-4
I
~
~
-
=: 100
eo
60
'"
20
-40-<:
l\.
...... ,,~
\.
. . ..
10
10
COLLECTOR-TO-EMITTER VOLT"GE (VCE1-V
.4S
- 0 -0.0 -I -lei
8ASE.-TO-EMITTER VOLTAGEIVaE'-v
-2
92eS-le016
~
-0,01
e
, I.
-0.1
I
COLLECTOR CURR£NT 1Ic:I-A

II
-I
• 1
-10
Fig. 2 - Maximum operating ares. Fig. 3 - Typical transfer characteristics. Fig. 4 - Typical de beta characteristics.
294 ______________________________________________________________________
POWER TRANSISTORS
B0278, B0278A
High-Current, Silicon N-P-N VERSAWATT Featurf!s:

• Low saturation voltage:
Transistors VCE(sat) = 1 V max. at IC 4 A
For Medium-Power Linear and Switching Service • VERSAWA TT package (molded-
in Consumer, Automotive, and Industrial Applications
silicon plastic)
The RCA B0278 and B0278A are home- These transistors are intended for a wide • Maximum-safe-area·of-operation curve
taxial-base silicon n-p-n transistors sup- variety of medium-power switching and • Thermal-cycling rating curve
plied in the JEOEC TO-220AB straight- linear applications such as series regula·
lead VERSAWA TT package. They are also tors, solenoid drivers, motor·speed con· TERMINAL DESIGNATIONS
available in the TO·220AA package (leads trois, inverters, output stages for high-
B
formed to fit a TO·66 socketl; to order fidel ity ampl ifiers, and power supply and
this version, specify formed lead No. 6201. vertical·deflection circuits for mono· IFLAc,.GE)
chrome and color TV.
MAXIMUM RATINGS, Absolute·Maximum Values: BOTTOM VIEW

t2CS-27519
B0278 B0278A
JEDEC TO-HOAB
COLLECTOR·TO·BASE VOLTAGE VCBO 55 70 V
With external base-to-emitter resistance (ABe) = tOOn . . . . VCER('u,) 55 70 V
With base open . . . . . VCEO('u,) 45 60 V
EMITTER·TO·BASE VOLTAGE VF.BO 5 V
COLLECTOR CURRENT (Continuou,) IC 10 10 A
BASE CURRENT IB 4 A
BOTTOM VIEW 92CS-27510
At case temperature~ up to 25°C .. 75 75 W
At ambient temperatures up to 25°C 1.8 1.8 W JEDEC TO-220AA
At case temperatures above 2SoC, derate linearly .. 0.6 0.6 WIDC
At ambient temperatures above 25°C, dlP'rate linearly . , . 0.0144 0.0144 WIDC
TEMPERATURE RANGE:
Storage & Operating (Junction) - - -65 to 150 - - DC
At distance ~ 1/8 in. (3.17 mm) from case for 10 s max .. - - - 235 - - - DC
COl.LECTCR-TO-EMlT~ VOLTAGE IVa: lo4V

100.
•
I ·• f-~I~o ~ ..
'TtMAX.).7!1W
~
.
~ 2
f ~rJ7 ~ Ii! 100
~~
J~
~
~
\'Z.'!I"C;
f-j ,
i 10 b " """,,<, ~s1!1C;
o
" ,~1
•
':' i I--+:;.~'
..
60
~ ~ "'""
in · f-~ '\J r v ..~ '~
I
l--F
\ f\ 1,\ ~"
~ ·J . . , , .
I
l!
< il~g Jl~
I~ 1\ \ I'\I'{
~o~a\:o
, , ,
8
20
. . .. . . ,. , .,.
1000 10,000 100,000 0.01 nl I 10 10 100
COLlECTOR CURRENT (ICI-A COLLECTOR-TO-EMITTER VOLTAGE (VCEI-V
92CS-2779
Fig. 1 - Thermal-cycling ratings. Fig. 2 - Typical dc beta characteristics. Fig. 3 - Maximum safe operating area.
COlLECTOR-TO-EMITTEfI VOLTAGE t VCEI "4Y

CASE TEMPERATUflE ncl.U"C
I •• I.
~ 2~~--~~~-+--~t+~-+--+-~
i I•• I--/~::+++~.d-,-W-I---I-t-++l
Ii I·'f-+-H-tt-+---+-+N:-t-++H
I O'f-+~H-tt-+---+-+tt-'-~-t-+H
i 0.4f-+--t-I+t--+--t-t++--+-'-+.>oj;:H
4 6 1 0 •1 4 6. I
0.01
eASE-TO-EMITTER VOl.TAGE tYaEI-\! COLLECTOR CU"RENT I Iel-A
tlCl-ll1l7
l2eS-2146'
Fig. 4 - Typical transfer characteristics. Fig. 5 - Typical gain bandwidth product. Fig. 6 - Typical input characteristics.
295
POWER TRANSISTORS ______________________________________________________________________________
BD278:,-BD278A
ELECTRICAL CHARACTERISTICS, at Case Temperature (TcJ = 2£t>C unless otherwise specified

VOLTAGE CURRENT
CHARACTERISTIC SYMBOL B0278 B0278A UNITS
V de A de
VCE VEB IC IB MIN. MAX. MIN. MAX.
With base-to-emitter junction 55 1.5 - 2 - -
reverse-biased 70 1.5 - - - 2
JCEX mA
With base-to-emitter junction reverse- 50 1.5 - 10 - - mA
biased and TC= 150°C 65 1.5 - - - 10
With base open ICEO 30 0 - 2 - -
45 0 - - - 2
Emitter Cutoff Current lEBO 5 - 5 - 5 mA
Collector-to-Emitter Sustaining Voltage:
With external base-to-emitter VCER(sus) 0.2 55 - 70 -
resistance (RBE)= 100n a V
With base open a VCEO(sus) 0.2 0 45 - 60 -
DC Forward-Current Transfer Ratio a hFE 4 4 15 75 15 75
Base-to-Emitter Voltage a VBE 4 4 - 1.8 - 1.8 V
Voltage a
VCE(sat) 4 0.4 - 1 - 1 V
Common-Emitter Small-Signal
Short-Circuit Forward-Current hfe 4 0.5 15 - 15 -
Transfer Ratio (f = 1 kHz)
Magnitude of Common-Emitter
Small-Signal Short-Circuit
hfe 4 0.5 8 28 8 28
Forward-Current Transfer Ratio
(f = 0.1 MHz)
Forward-Bias Second-Breakdown
Collector Current (t= 0.5 s) ISlb 40 1.87 - 1.87 - A
Thermal Resistance:
Junction-to-Case ROJC - 1.67 - 1.67
°C/W
Junction-to-Ambient ROJA - 70 - 70
a Pulsed, pulse duration = 300J-Ls, duty factor = 0.018
BASE·lO·EllTTEI YOLTAGE {V,v-v
Fig. 8 - Reverse·bias second-breakdown

Fig. 7 - Typical output charactaristics. characteristics.
296 ______________________________________________________________________
____________________________________________________________________________ ~POWERTRANSISTORS
80450, 80451
Silicon Transistors for 70-Watt Quasi-Complementary- Symmetry
Audio Amplifiers with Hometaxial-Base IOutput Transistors
The RCA-80450 and 80451 are n-p-n with seven TO-39 case transistors,
hometaxial-base silicon transistors eleven diodes, and an 84-volt split
particularly suitable for output stages power supply. The amplifier output is
of audio amplifiers. The 80451 is in- directly coupled to an 8-ohm speaker.
tended for 70-W amplifiers with 8-ohm This amplifier is especially suitable
loads and will also deliver 38 W with for instrumentation applications
16-ohm loads. The 80450 is intended where ruggedness is essential.
for 70-W amplifiers with 4-ohm loads. TERMINAL DESIGNATIONS
The 80450 and 80451 are supplied in
The 70-W amplifier shown in Figs. 2 the JEOEC TO-204MA (formerly TO-3)
and 5 uses two 80451 in conjunction hermEllic steel case.
c
VC80··········· .. · ....................•...•.. 80
VCEO··········· .. · ........................•.. 50
=
VCER(R8E 1002) ............................. 80
VEBO ......................................•.. _ _
BD450
7
BD4I1
95
60
95
v
v
V
V
'0 9"5-2"1.
IC·············· ...........................•.. _ _ 15 V
IB·············· .. · ..................•........ _ _ 7 A JEDEC TO-204MA
pt-:
AtTC ... 25·C ..........................•...... _ _ 115 w
AtTC>25'C ................................. _ See Fig. 1
Tstg, TJ ........................................ _ -65to200 ·C
TL:
At distance ~ 1/32 In. (0.8 mm)
from seating plane for 10 s max.................. _ _ 230 _ _ ·C
TYPIC~L PERFORMANCE DATA

For 7()'Watt Audio Amplifier
Measured at a line voltage of 220 V, TA = 2SoC, and a frequency of 1 kHz, unless otherwise specified.
Powar: 1M Distortion:
Rated power (B-!2 load, at rated 10 dB below continuous power output
dlstortlon) ...................... 70W at60Hzand7kHz(4:1) ........••• 0.1%
Typical power(4-!2load) ..........•. 7OW. Sensitivity:
Typical power(16-!2load) ........... 38W At continuous power.output
Music power (B-!2 load, at 5% THO rating .....••............••.. 700 mV
with regulated supply) ........... 100W
Hum and Noise:
Dynamic power (B-2 load, at 1% THO with
Below continuous power output:
regulated supply) ................ 88W 25 50 75 100 125 150 175 200
Input shorted .................. 85dB
Total Harmonic Distortion: Input open ••....•............•• &odB
CASE TEMPERATURE 1Tcl--c
Rateddlstortlon .................. 1.0%

Input Resistance ..•...•..•.......•• 20 k!2 Fig. 1 . Dera tlng curve.
• Wlth 6O-volt split power supply and 2·B0450 substltuted'for 2·B0451.
,-
Fig. 2 . Block diagram and transistor complement for 70 watt quas/·complementary-symmetry

audio amplifier with hometax/a/·base output transIstors. Fig. 3· Thermal-cycling ratings.
_________________________________________________________________ ~7
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _- - - - - - - - - - - - - - - - - - - -
80450, 80451
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25'C
LIMITS
CHARAC· TEST CONDITIONS 80450· 8D451· UNITS
TERISTIC Min. Max. Min. Max.
ICER
VCE = 70 V, RSE = 1000
VCE = 85 V, RBE = 1000
0.5
0.5 .--mA
-
-- -
IESO VES=4 V, IC=O 1 1 - mA -
~VCER IC = O.2A,RSE = 100 0 50 95 V - -
fy
hFE
IC= 1 A, VCE=4 V
IC=4 A, VCE=4 V
0.8 0.8
20 70 -
MHz -
-
- ... 10
... 100
IC=6 A, Vce=4 V 20 70 - - tOI.I.ICTQR-TQ-EMITT£II VO~T"'GE (YCEI-.Y

tlCS-aoiM
VCE(sat) IC=4 A,IS=0.4 A

IC=6 A, IS=0.6 A 1
1
-- V - -- - Fig. 4 • Maximum operating areas.
VSE
IC=4 A, VCE=4 V 1.4 - V
IC=6 A, VCE=4 V 1.4 - - -
VCE=50 V, t=1 s 2.3 - - - •
ISib
VCE=60 V, t=1 s 1.95 - A
- - , '"lki'll / I
.For characterlatlcs curves snd tsat conditions, rsler to publ.lahed data lor prototype 2N3055 § I
(Hometaxlal), File 1077. ~ I
0
•
,
I:
/ I
110
.1
o.oS 0.10.20.111 2
I,.
!I
THO
to 20 10040 50 10 70 10 to 100
.
'!"~:1.
~
~~~~~r-1-----------~r-------------~~----~.4IY
D, POWER OUTPUTfPQuTl-W
+~ lis 'ICS-II''''
lie
- sov
".
12K
1.7K
c.:
...
"10
10
lOy
Fig. 5 • Typical Intermodulatlon and total har·
monic distortion as a function of power
output at 1 kHz for 7O-W amplifier.
I
. I, W'~T<
I
1/ "-
, :-..
• 10 20 to 100200 100 IIC 2tC 5IC 10K 10K 5OK1OOIC
FREQUENCY-HI
.ICI-IIIII
Fig. 7· Typical response as a function of ,,..

quency at 5O-W output for the 7O-W
II pF amplifier.
c.
"
080
\.)
NOTES:
1. D1·D11-D1201A.
2. Resistors are 'Ia·watt, :!: 10%, unless other·
wise specified; values ars In ohms.
3. Non-Inductive resistors.
4. Capacitances are In "F unless otherwise
specified. .
5. Mount each device on TO-39 heat sink.
• 6. Provide heat sink of approx. 1.2 'C/W per
output device, with contact thermal resis-
tance 01 0.5 'C/W max. and TA = 45'C max.
Fig. 5 • 7O-watt amplifier circuit featuring quasl·complementary-symmetry output employing

hometax/a/·base construction output transistors: (a) basic amplifier Circuit, (b) powe,.
supply circuit.
~8 __________________________-----------------------------------
POWER TRANSISTORS
80500, 80501 Series
Silicon Transistors for 40-Watt Full-Complementary- Symmetry

Audio Amplifiers
The B0500-Series and B0501-Series coupled to an 8-ohm speaker. The
types are p-n-p and n-p-n epitaxial- B0500A and B0501A are intended for
base silicon transistors, respectively, similar 40-watt audio amplifiers ex-
especially suitable for audio-output cept for a 4-ohm speaker and a split TERMINAL DESIGNATIONS
applications. The 40-watt amplifier 46-volt power supply. The B0500 and
shown in Figs. 1 and 5 uses the B0501 are intended for 25-watt audio
B0500B and B0501B in conjunction amplifiers of similar circuitry except
with seven TO-39 transistors, ten for a 4-ohm speaker and a split 40-volt
diodes, and a 64-volt split power sup- power supply.
ply. The amplifier output is directly
B0501 B0501A 805018 N·P·N
B0500- B0500A- B0500B- P·N-P •
92CS-275t9
VCBO .............................. 60 70 90 V
BOTTOM VIEW
VCEO .............................. 50 60 80 V
VCER(RBE =
100 Q) . . . . . . . . . . . . . . . . . . 55 65 85 V JEDEC TO-220AB
VEBO .............................. _ - - 5 V
IC·································· _ __ 10 A
IB·································· _ __ 4 A
PT:
AtTC .. 25·C ...................... _ _ _ 75 w
AtTC>25·C ...................... _ See Figs.2and4
Tstg, TJ ............................. _ - 65 to 150 ·C
NCm:: QllENT DEMllNG AT C(IIISTMT
TL: YOLTMIE AMJEI ONLY 1D THE DI'''''''T!ON-
LI"TiD PORTION AND THE lS/~ -UMlTtD
At distances ~ 1132 in. (0.8 mm) POIITION OF IMXIMUM OfI£"ATINQ AMA
CUItYL DO NOT DEflATE THE
from case for 10 s max ........... _.... _ __ 230 ·C !iPEaf'ED VAI..UE FOR Ie MAX
- For p·n·p devices, voltag~ and current values are negative.

TYPICAL PERFORMANCE DATA
For 40·Watt Audio Amplifier
Measured ata line voltage of 220 V, TA = 25'C, anda frequency of 1 kHz, unless otherwise specified.
Power: IHF Power Bandwidth:
Rated power (8·12 load, at rated 3 dB below rated continuous power at
distortion) ...................... 40W rated distortion ................ 80 kHz
Typical power (4-12 load) ............ 75W_ Sensitivity: 2D 10 'PS tOO 12S 150 11'!I zoo
Typicalpower(l6-12load) ........... 22W At continuous power·output CASE TEMPERATURE CTCI-'"C
Total Harmonic Distortion: rating ....................... 800 mV

Rateddistortion ................. . 1.0% Hum and Noise:
Typical at 20 W .................. 0.05% Fig. 2· Derating curve for all types.
Below continuous power output:
1M Distortion: Input shorted .................. 80dB
10 dB below continuous power output at Input open ..................... 75dB
60Hzand7kHz(4:1) •.......... .. 0.1% Input Resistance ................... 20k12
-Typical power (412 load) with 46-volt split power supply and BD5OOA, BD501A output. .... 40 W
Typical power (412 load) with 40·volt split power supply and BD5OO, B0501 output ....... 25W
=
·-f-i
100.
P, (MAX.}-YSW
•I •
~ -r-,Jj~ ~~
l! •
i -I
=-~'
1\
~~
:=1
10
~
\;..
! ·, r
e
;;
z ·=! -f .....
\ I"\, '\ir,
~~<b.
,i
. .tt.. . . . . . .
10'
3t- ?,
~ ~~~
10
HUMBflt OF 'THERMAL CVCLES
10
"CS-I1M5WI
,ICS-JOII!
Fig. 1· Block diagram and transistor complement for 4(J.watt fulf-complementary·symmetry

audio amplifier. Fig. 3· Thermal·cycling ratings.
____________________________________________________________________ 299
POWER TRANSISTORS
BD500, BD501 Series

.-
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C CASE TEMPERATURE ITc)-2re
LIMITS"
• 1
1,;1"...
J (CURVES MUST BE DERATED LINEARLY
WITH INCRE.SE IN TEMPERATURE)
CHARAC· BD500- BD500A- BD500B-

iu lO, !--CONTINUOUS
•
TERISTICS
TEST CONDITIONS
BD501 BD501 A BD501B
Min. Mu. Min. Max. Min. Max.
UNITS !:! •
...
:::
:!
. DISS~~~PER!T~?: TED~
"-
~~
ICER VCE=45 V - 1 - - - - ~ '. \
<,
RBE= VCE=55V - - - 1 - - rnA 0
~ 4
~
<:,
1002 VCE=75V - - - - - 1 ::l •
lEBO VEB=5V - 1 - 1 - 1 rnA 8 YCE~~~~~eoo.'D5OIJ
I==~ eo v (8D6Oo.,ID50IA.
---!.
0.1: r---.
VCEO
VCER
IC=0.1 A
IC =0.1 A; RBE = 100 Q
50
55
-
-
60
65
-
-
80
85
-
-
V
V
. .. .
80 v
10
laD~08.
aoeolll
100
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-Y
•• 1000 • .••
IT IC-0.5 A; VCE-4 V 5 - 5 - 5 - MHz IICI-SOII'
hFE
IC = 5 A; VCE = 4 V 15 90 15 90 - - -
IC=3.5 A; VCE=4 V - - - - 20 120 Fig. 4· Maximum operating areas for a/l types.
VCE(sat)
IC =5 A; IB =O.5'A - 1.2 - 1.2 - - V
IC == 3.5 A; IB = 0.35A - - - - - 1
IC = 5 A; VCE = 4 V - 1.8 - 1.8 - -
VBE
IC=3.5 A; VCE=4 V
VCE-20 V; t -0.55 s
-
3.75
-
-
-
-
-
-
-
-
1.5
-
V
, I
10 LOAD
IWAT~.
ISlb VCE = 25 V; t =0.55 s
VCE = 30 V; t = 0.55 s
-
-
-
-
3
-
-
-
-
2.5
-
-
A
I 0
..
"\
II!
,l/
"For characteristics curves and test conditions, refer to published data for prototypes (File 678): ~ ,\
2N6487 (Bo50l, B050IA); 2N6488 (B050IB); 2N6490 (B05OO, B05OOA); 2N6491 (B05OOB). ; •
- For p·n·p devices, voitage and current values are negative.
• so
'.0
-- c,'r .". 10 20 100 200 100 lie I.
FREQUENCY-III
!He.1OIf 10K 50IC fOOl(
• c.
l;g·
0,
"
'.
22'
R"
",
~~I
Fig. 6· Typical frequency response.
R, C.
'0'
1!0l111111~11
.n
0.0510 ,20 50 MKJ 200 '00 lie ZIC ,Ie 10K ZOIC 10M lOOK
"'EOUIIICY-Mi
Fig. 7· Typical total harmonic distortion as a

R•
••0
function of frequency.
~--+----+--~--------~~r-+-------------~--~----~-32V
(a) CI6X°:OSv
NOTES (for Fig. 5):
I. ol·oIO-ol20IA. .
2. Resistors are Va·watt, ± 10%, unless other·
wise specified; values are in ohms.
3. Non·inductive resistors.
4..Capacitances are in "F unless otherwise
specifiad.
5. 55°C thermal cutout attached to heat sink
of output devices. .
6. TO·39 case devices with heat radiator at,
tached.
7. Provide heat sink of approx. 1.2°CIW per
output device with a contact thermal resis· (b)
tance of 1.3 °c/W max. and TA = 40°C max.
Fig. 5· 40-watt amplifier circuit featuring full·complementary·symmetry output using load line
limiting: (a) basic amplifier cirCUit, (b) power·supply circuit.
~o ___________________________________________________________
------------------------------------------____________________________________ POWERTRANSISTORS
BD550 Series
Silicon Transistors for 70-, 120-, 200-, and 300-W Quasi-
Complementary ..Symmetry Audio Amplifiers
The RCA-B0550, B0550A, and B0550B are several hundred watts of audio output power TERMINAL DESIGNATIONS
silicon n-p-n transistors especially suitable in quasi-complementary-symmetry audio am-
for applications. in audio-amplifier circuits, plifier configurations that employ parallel
in which they may be used as either driver output transistors. Circuit examples, a recom-
or output unit. mended complement· of transistors, and per-
These devices, together with a variety of formance data are shown for 70-, 120-, 200-,
other transistors that serve as input devices, and 300-W amplifiers_
VBE amplifiers for biasing, current sources,
load-line limiters (for overload protection), The BO-550-series is supplied in the JEOEC
and predrivers, may be used to develop TO-204MA hermetic steel case.
JEOEC TO-204MA

BD550 B0550A B0550B
VCBO· 130 200 275 V
VCEO· 110 175 250 V ;~
VCER(RBE = 100 nI 130 200 275 V i;=
VEBO· 5 V i/~i 100
1.~~
IC·
lB·
PT
7
2
A
A Jr.
!>3~
Wu C
20
10
.0
At TC';;; 25°C 150 W i· •
At TC>250C See Fig_ I
E~! 2.
~~a
Tstg, TJ . -65 to 200 ·C Ie
TL 255075100_150171200
At distance;;;' 1/32 in. (0.8 mml from seating plane CASE TDIP£RATURE'TCI-"t
for lOs max. ·C 92CS-I9943
230
Fig. , - Derating curve for 1111 type..
··
100
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C

•I
LIMITS
f
CHARAC-
TERISTIC
TEST CONDITIONS S055~
Min_ Max.
S0550A-
Min_ Max.
S0550S-
Min. Max.
UNITS ~
i · 1\
1\ '" ~
CASE·TEMPERATURE
CHANGE IATC l-50·C
VeE~110V - 1 - - - -
I I'
1\ "'I<
i ,.~ 1\
leER 'I--
VeE~175V - - - - -
..'" l"1:jC , "'I'...

RBE~100n
VeE ~ 250 V - - - -
1
- 1
mA
I--
"
. ..'" ··~"'r
;:! so
VCE ~ 95 V - 5 - - - - 10
, 4 6. I
ICEO VCE ~ 150 V - - - 5 - - mA 10 10
NUMIER OF THERMAL CYCLES
·10 10'
VCE ~ 200 V - - - - - 5 92CS-19922
lEBO VEB ~ 5V - 1 - 1 - 1 mA Fig. 2 - Thermal-cycling ratings for all types.

VCEO IC ~ 0.2 A 110 - 175 - 250 - V
VCER
fT
IC~0.2A;
IC~0.2A;VCE~
RBE ~
10V
loon 130 -
5 typo
200 -
5 typo
275 -
5 typo
V
MHz
t
·
•
•
CASE TEMPERATURE (Tc) - 25-C
(CURVES MUST IE DERATED LINEARLY
ilT" tCRljSj IN TEIIPERATUfIIE)
hFE
IC ~ 4 A; VCE
le~2A;VeE ~4V
~ 4V
-
15
-
75 -
15
-
75
-
10
-
50
.
. ..
;:"'10
~
z
lelMAXI CONTI.lusj,....~'to.l
~~~""
VCE(sat)
IC ~4 A; IB ~ 0_5A - 2 - - - - V
~
.
u • - I"'(~
- -
- -
.
IC~2A; IS~0_25A 2 2 0
- "".... I
~=
1-1
IC~4A; VCE~4V 0_75 1.75 - - - - u
~
•
VBE 8•
i.
V
IC ~ 2 A; VCE ~ 4V - - 1 2 1 2 VCED MAX) - 110 V (ID510)
VCE - 80 V; t - 1 S 1.87 - - - - - • -VCEO (MAX)-I7a Y IIOIIOA ~
IS/b VCE ~ 100 V; t ~ 1 S - - 1.5 - - - A

o.
... . .
'leEO IMAX) - 250 Y IIDHOI
II 100 _
VCE ~ 140 V; t - 1 S - - - - 1.07 - COLLECTOR~TO-I..ITTIR VOLTAR (VcIJ- V
1tC.·~.
• For characteristics curbes and test conditions, refer to published data for prototype RCA8638D (File 1060).
• For characteristics curves and test conditions, refer to published data for prototype 2N5240 IFile 321). Fig_ 3 - Maximum operating ares. for al/ types_
----------------------------___________________________________ ~1
B0550 Series
7O-Watt Amplifier
The 70·watt amplifier shown in Figs. 4 and supply. It is designed for direct coupling to
5 uses two BD550 transistors as output de· an 8 ohm load. Figs. 6 and 7 show typical
yices, and operates on a go·yolt split power distortion characteristics for the amplifier.
0.01
24.1 24'1 1/ 4.' 1/ 4 . , 1/ 4 ••
0.01 0.1 I 10 100
POWER OUTPUT 1POUT)- W
:)-....t-~I··
Fig. 6 - Typical total harmonic distortion BI "
CWIIILOAD
PROTECTION function of power output at 1 kHz, for
CIPICUIT the 7o-WIItt ampllfiar.
en a-,-I ileal.."
(U,-.-, ItCAIA..
UCI-1OII7'
FIg. 4 - Block diagram and transistor complement for 7o-watt qUBlI-complementsry·

symmetry audio amplifier with epitslCial-bale output tralllino"., '.,
----- ------,
PRGTECTION CIRCUIT
.. I
I
0.01
lIIe DI I 1/ 46"01/ 4 -'001/ 4 "1 Ie ' • • "OK , 4 "'OOK
fltEOUIENCY- HI
.,. Fig. 7 - Typical totsl harmonic distortion liS a

funclion' of frequency at 36 W, for the
I• 7o-watt amplifier.
.•
,
.. Typical Performance Data for 70-W Audio
.... Amplifier
-.-
MeJlsuredataline voltageof220 V, TA = 25"C,
L-____+_~--------+_------+_------------------------~~~--~
(.1
... -••• and a frequency of 1 kHz, unless otherwise
specified.
Power:
Rated power (8·n load.
NOTES:
at rated distortion). . . . 70 W
Typical power (16·n load) . . 40 W
._-
I. DI-D8.DI1-1N&39I. D9.o10.DI2.o13.IN6383 Total Harmonic Distortion:
2. fIooi-. _ 1/2_. tlOIf.. un... othorwllt
tpICi,iec:I: ..II.... .,. in ohms. Rated distortion. . 0.5 %
3. Non·lnduclivll reIiRmI. +45V 1M Distortion:
4. ~ . . In lAF un.... otherwi. spedfied 10 dB below continuous power
8. Mount _hdovlco.n TO·38 _Ii...

6. 8O"C _ .... cutout at........ to _ .Ink of
7. A _ TO·38 _link cop to dovIco .... mount

output at 60 Hz and 1 kHz (4:1)
IHF Power Bandwidth:
3 dB below rated continuous
power at rated distortion
<0.2%
. 6 Hz to 50 kHz
••.
on .me ... Ii.. with the output dewi. ..
-~ _ _ of_x.I·ClWpor_
' - - 4 - - -...--45 V Bandwidthst 1 W . 5Hzto 100kHz
dovIco_. _ _ _I_.,Or.·CIW Sensitivity:
miX. and fA, • •oC mIX.
At continuous power-
output rating. 600 mV
Hum and Noise:
tZCM-30448 Below continuous power output:
Input shorted. 100 dB
FIg. 6 - 7o-watt amplifier circuit f.turing quBII-comp/IImentBry..ymlfHltry Input open . . . • . 85 dB
With 2 kn rasistance on 2()"ft.
output employing epitalCial-bBltt CtHlltruction output tranl/,ton:
cable on input 91 dB
Is} billie IImpilfilll' circuit, fb} po_ppfy circuit. Input Resistance 18 kn
~2 _________________________________________________________________
B0550 Series
'120-Watt Amplifier It is intended for direct coupling to an 8 ohm 8 'v:
The 120-watt amplifier shown in Figs. 8 and load, but may be used on 4 ohm or 16 ohm u •
9 uses four BD550A transistors as parallel loads as shown in the Typical Performance I
··
,
iIn,··:
units in the amplifier output stages, and Data: Figs. 10 and 11 show typical distortion
operates on a 130·volt split power supply. characteristics for the amplifier. "'ERENCE DISTORTIOf!I 10.' 'IW
10TH
~ CHANNILS
i ··
'"IMI.I
I' j""!!l
0.01
. ... 1
0.'
2
'" , . ..,, . 4
JJU
"'00' '"
Nel-IiOfI
Fig. 10 - Typical toW harmonic di.tortion a. a
function of po,..r output for .ingle
channel fSfI) and both channels
driven at I kHz for 12o-Wamplifier.
---~---.,--------....,--r-....,....,-
--
Fig. B - Slock diagram and triln.i.to ....omplsm.nt for I 2O-W que.i-complem.ntary..ymm.try
audio amplifier with pera".' output trllnll.torr.
...- ... . . IIIY
1~-+tH-+-rHt1-++H-t-HH~~+H
DI 0 10 f •
22 K N.L.
IW
2 .... I .... 2 .. II r .. II ;r ....

DII 10 100 1000 IOIC
FREQUENC'f'-HI
Fig. I I - Typical tollll harmonic di.tortion ..

I a function of frequency for 6O-W
lOW 22 output for 12o-Wamplifier.
2W
Dl2 Typical Performance Data for 120-W Audio

Amplifier
Measured at aline voltage of 220 V, TA = 25"C,
and a frequency of 1 kHz, unless omerw;se
33 200 pF
specified.
5% MOUNT CLOSE Power:
L _ _~_'_---....-J._ _-.:.TO=-..:.TR:::A:::N::S::IS~TOR=_ _~_4__- .....- - ·......_.-uIllL. y Rated power (8·fI load,
(01 _ _ -1OM8 - at rated distortion). . . 120W
Typical power (4·fI load) . 120W·
Typical power (16·fI load) . 70W
NOTES, 9W Total Harmonic Distortion:
1. 01·08 - lN5391; 09.010 - lN914B; 011. Rated Distortion. 0.5%
012 - lN5393 3-A SLOW-
2. Resistors are 1/2'W8tt, ! 10%, unless other· BLDW TYPE 1M Distortion:
wise specified; values are in ohms. 10 dB below continuous power
3. Non-inductive resistors. 220V output at 60 Hz and 7 kHz (4;1) 0.2%
4. Capacitances are in JJ F untess otherwise 110 Hz Sensitivity:
specified.
5. 95 'C thermal cutout attached to heat sink of At continuous power output rating .900 mV
output devices. Input Resistance. . . 18 kfl
6. Mount each device on 10·39 heat sink. IH F Power Bandwidth:
7. Attach TO-39 heat sink cap to device and THERMAL 3 dB below rated continuous
mount on same heat sink with the otuput CUTOUT power at rated distortion . 5 Hz to 50 kHz
devices. NOTE 5 Hum and Noise:
.8. Provide heat sink of approx. 1 C/W per
output device with a contact thermal reo Below continuous power output:
sistolnce of 0,5 elW max. and T A =45 C max. - ... - ... Input shorted.
Input open • .
104dB
88 dB
-65 +65
92CM-30448 92CS-30449 N. L. N. L. With 1 kn resistance
Ibl on 20·ft cable on input. 104dB
Fig. 9 - I 2O-,..n amplifier circuit featuring qUll8i-complsm.ntary-
.ymmetry output circuit with parallel outpUt trsnsi.torr: ·With. 90 V split power supply and 4·BD550
substituted for 4-BD550A.
fa) M.ic amplifier circuit, fb) pows,.,upply circuit.
__________________________________________________________ ~---303
POWERTRANSISTORS ______________________________________________------------------------------__
B0550 Series
200-Watt Amplifier split power supply. It is intended for direct 'VI
The 200-watt amplifier shown in Figs. 12 coupling to an 8 ohm load, but may be used
and 13 uses eight 805508 transistors, two as on 4-ohm or 16-ohm loads as. shown in the
drivers and six as parallel units in the ampli· Typical Perform~nce Data. Figs. 14 and 15
show the typical distortion characteristics
fier output stages, and operates on a 160·volt
for the amplifier.
I' .... I .... r ... 2 ....

10 100 1000 10K 1001C
FREQUENCY- "'
Fig. 14 - Typical rotal harmonic di.torrion 11$ a

function of frequency at 700-Wour-
put for 200-Wamplifler.
Fig. 12 - Block diagram and transistor complement for 200-W quasi-complementary-symmetry

audio amplifier with parallel output transistors.
e~ ,o.l+Tf·
.~
~mlH!im
I': .
~
.!...... D'.!!O.TlON 0.'
0.01 2 .. "~.I 2 .. " , I ... I . . . "00 I ...1
iIlOWIR OUTPUT i,our)-W

IICI-IIO.'
Fig. 15 - Typical total harmonic dI.tortion a. a

function of power outpUt for lingle
channel and both channsl. driven at
7 kHz for 200-Wamp/ifier.
NOTES:
I. DI·D8-IN539I;D9.DIO-IN5316;DII.
DI2-IN5393 4 ~A SLOW-
2. Reaistors are 1/2·wan. :!: 10%, unless otherwise BLOW TYPE
specifNld; values IrI in ohms.
3. Non·inductive resistors. 220'11
4. Capacitances are in pF unless otherwise 50 Hz
specified.
5. BOoC thermal cutout attached to heat
sink of output devices.
6. Mount each device on TO·39 heat sink.
7. Attach TO·39 heat sink cap to device THERMAL
and mount on same heat sink with the output CUTOUT
NOTE 5
devices.
"S. Provide h8lUink of approx. l Q Cffl per output
device with a contact thermal reMstance of
O.&OCIW max. and TA = 46°C miX.
-80'11 +80,'11
92CM-304<41 Ibl NL N·L
Fig. 13 - 200-watt amplifier circuit featuring qua.i-complemenrary-$ymmetr~CS--2
output circuit with parallel output tran.i.tors: fai balic emplifier
circuit, fbi power-.upply circuit.
304 ___________________________________________________________________
POWER TRANSISTORS
B0550 Series
Typical Performance Data for 200-W Audio Amplifier
Measured at a line voltage of 220 V, TA ; 2f)C, and a frequency of 1 kHz, unless otherwise specified
Power:
Rated power (S-n load, at rated distortion) 200W
Typical power l4-n load) . 200W·
Typical power 116-n load) . 120W
Total Harmonic Distortion:-
Rated distortion. 0.5%
1M Distortion:
10 dB below continuous power output at 60 Hz and 7 kHz (4:1) , 0.2%
Sensitivity:
At continuous power output rating . 900mV
Input Resistance 18 kn 10 102 I()I ,0' ,0'
FREQUENCY If! - HI
I H F Power Bandwidth:
3 dB below rated continuous power at rated distortion. 5 Hz to 35 kHz
Hum and Noise: Fig. 17 - Typical total harmonic distortion as a
Below continuous power output: function of frequency for 300-W
I"put shorted. . 96dB amplifier.
'nput open 84dB
With 2 kG resistance on 20-ft cable on input 94 dB
• With a 110-V split power supply and 8-B0550A substituted for 8-B0550B.
300-Watt Amplifier
The 3.00-watt amplifier shown in Figs. 16
and operates on a 172-volt split power
supply. It is intended for direct coupling to ,, , ~ TlWl!:MTUIIE "AJ -we
and 19 uses two 8D5508 transistors as

drivers and sixteen 8D5508 transistors as
parallel units in the amplifier output stages,
an 8 ohm load, but may be used on 4 ohm
or 16 ohm loads as shown in the typical
performance data (Figs. 17,18, 20,and 211.
r
~
~-.
'\
,
-s
-4
I ,..,
10
I • II
10'
FMQUE:NCY
... .
Cf) -
lOS
HI
••
10·
I •• '
to'
92CS-ZTz,nu
,
r - - - L --...,
Fig. 18 - Typical frequency response for 300-W
I
I
I
OVERLOAD
PROTECTION
CIRCUIT
I
I
I
amplifier.
I SEE FIG.I9IC) I
L_--r-_.J
92CM-3OI90
Ratings and characteristics of type CA3100
are given in RCA data bulletin File No. 625.
Fjg. 16 - Block diagram and transistor complement for 300-W quas;-complementary-symmetry aud;o
amoli{;er with parallel output trans;stors.
Typical Performance Data for 300-W Audio Amplifier

Measured at a line voltage of 220 V, TA; 25 0 C, and a frequency of 1 kHz, unless otherwise specified
Rated Power (8-n load at rated distortion) 300W
Typical power (4-n load) . 300W·
Typical power 116-,\1 loed . . .. 160W
Total Harmonic Distortion (THO). See Figs. 17 and 21
Interrnodulation Distortion (IMOl. . See Fig. 20
Sensitivity. 1.6 V for 300 W
Input Impedance. 10kn
Hu~ and Noise: ,
Below rated power output:
Open input • • 104dB
Shorted input. '0' • • • o' 112dB
Pha.e Shift +1 at 20 Hz,-13 at 20 kHz
Slew Rate. 35 VII'S
Rise Time. 2.51's
Damping Factor. . 200
·With 120 V split power supply and 1 8-B0550A substitutad for 18-80550B.
_______________________________________________________________ ~5
POWER TRANSISTORS
BD550 Series
i - - - - - - - - - +Vl
I I+SSV' I
INAte I
I I
I 1
I 1
I I
I I
I 1
I 1
I I
92CL-30443 '1 I
NOTES:
(al
L _________ J
1. Resistors are 1I2·watt, 1:5% carbon, unless (el
otherwise speciflldj values are in ohms.
2. Non·lnducttv. resistors. •• r---t==;-~=--rT---<>+SS V
3. CapacitanCII are in f.lF unlen otherwlta
specified. •
4. Kt - Relay. iingle-pole, Single·throw,
2[J20~E8I N.L.
normally ciOled. with 24·V, 3 mA coil. SO H.
6. TSS1 - 70"C thermal cutout attached to
heat link for output devices.
6. S1 - 10·A circuit breaker. ~--~~ V
7. Common heat sink - 176 c~ minimum.
YB. Provide heat sink of appro", 1"elW per
N.L.
output device with 8 contact thermal (bl tz,CS·aollO
resistance of O.5"C/W max. and
TA .. 45"C max.
FIg. 19 - 3DO-Waudio amplifier circuit featuring quasi-complementary
92CL-30443 symmetry with pera"el output tran.istors: fa) basic amplifier
circuit, fb) power-supply circuit, and fc) protection circuit•
.-..ENT TlMPERATURE (T ). 25*C
L:O~
.. ",
....
~....
1004
~-
.... i.-'
.... i
.... QI
_ _
.1 iao
OUTPUTIPouT,-w
II 10 0.01
t .. II
0.1
. " . . . . . It
I )0
•• ,.
100
CCHmNUOUI POWO OUTPUT (PouT) -
I
w
•••
1000
1ICI~I7IHJlI
92CS-212lU'
Fig. 20 - Typical intermoduletion di.tortion Fig. 21 - Typical tota".,,,monic di.tortion
as a function of power at 60 Hz a. a function of power at 1 kHz,
end 7 kHz with both channel. both channel. driven, for 300-W
driven for 3DO-Wampllfier. amplifier.
~6_. ________________________ ~ ___________________________

_____________________________________________________________________________ POWERTRANSISTORS
BDX33,BDX33A,BDX33B,BDX33C,BDX33D,
BDX34,BDX34A,BDX34B,BDX34C
10-Ampere N-P-N and P-N-P Darlington Features: Ie • Operates from without predriver
Powe r Trans." stors .. Lowleakageathightemperature
High , ...". second·breakdown capability
40-60-80-100-120 Volts, 70 Watts Applications:

• Power switching
• Hamlnftr drivers
Gain of 750 at 4 A (BDX33, BDX33A, BDX34, BDX34A) • Series and shunt regulators
Gain of 750 at 3 A (BDX33B, BDX33C, BDX33D, BDX34B, BDX34C) • Audio amplifiers
These RCA devices are monolithic silicon transistors are complementary to the BDX34,
n·p·n and p·n·p Darlington transistors de· BDX34A, BDX34B, and BDX34C p·n·p TERMINAL DESIGNATIONS
signed for low· and medium·frequency power devices. B
applications. The high gain of these devices
All these transistors are supplied in the
makes it possible for them to be driven
JEDEC TO-220AB package. C
directly from integrated circuits. The BDX33, (FLANGEI
BDX33A, BDX33B, and BDX33C n·p·n
MAXIMUM RATINGS, AbsoIUfe..Maximum Values: BDX33 BDX33A BDX338 BDX33C BDX33D
BDX34 BDX34A BDX34B BDX34C.
COlLECTOR~TO-BASE VOLTAGE ••.•••..••.•••.......
COLLECTOA-TO-EMITTER VOLTAGE:
VCBO 4. 60 eo 100 120 V
BOTTOM VIEW
NCS-2?S"
JEDEC T0-220AB
With eKternall:Jese.to.emitter r8liltance lABEl" 1000, sustaining ....• " VCERbus) 46 eo eo 100 120 V
With .... open. sustaining •.••..•.•..•••.•••.••.•.•.•••••..•..• VCEolsusl 46 eo eo 100 120 V
WIth"'r~"'V8E""-1.5V ........ ........... ........ VCExlsus) 46 eo eo 100 120 V
EMITTER·1'O-aASE VOLTAGE. • . .. . • . • .. . . .. . . • . . . . . . • .. .. .. .. ..
CONTINUOUS COLLECTOR CURRENT............................
VEBO
.IC 10
•
10
5
10
5
10 10
V
A
CONTINUOUS BASE CURRENT ........................ ,......... 'a 0.25 0.25 0.25 0.25 0.25 A
TRANSISTOR DISSIPATION: P-r
At call ~penltu'" up to aGe ............................... . 70 70 70 70 70 W
At~tltmpenltUresabove~C •....•..••..•...•.....•.......•• Derate lin.rly 0.68 Wt"C
TEMPERATURE RANGE:
8tanIgI and OparetinlUunction} ..••..•..•..•..•.••..•..•....•.. -65 to + 150 DC
LEAD TEMPERATURE CDuring SoId.-II'II):
At diltal1Cfll;>lISin, ~3.l7mm)fromC811 for 10s ma............. .. 23• ·C
• For p n p devu:es. volt • • and currant value' a •• tlagetiv •.
10 1
92CS-29309RI 92C5-29310
Fig. 1 - Maximum operating areas for Fig. 2 - Maximum operating areas for
BDX33-series types. BDX34-series ·types.
307
POWERTRANSISTORS ____________________________________________________ ~ ____________________
BDX33, BDX33A,BDX33B,BDX33C,BDX33D,
BDX34,BDX34~BDX34B,BDX34C
100.
TEST CONDITiONs. LIMITS •I : kt--

~I ~.>~
VOLTAGE ~'\ ;;
I ' i~ l\'
SYMBOL
Vdc f
~~
Vea VCE VaE IC la M.... Mu. Min. MIIx. Min. MIx. Min. Max. Min. Mox.
i!
a;
-
.~
10
60 0 0.5
~ , Q:
~
~4>
50 0 0.5
ICED '
With base open 40 0
-
0.5
! '"
\
N~~
30 0.5 ~
20 0.5
~ , i~~o~
IceD
TC=I00'C
60
50
40 10 -
10 -
10
1
,
..~1\
. ~ "r-... • '0'"
30 10 NUMBER OF THERMAL CYCLES
92CS-227'U'
20 10
mA
120 Fig. 3 - Thermal-cycling rating chart for
100 all types.
IC80 80
60
45
120
IC80 100
Tc -100'C 80
60 5
leso
45
-5
0.1' 0
10 - 10 10 10 -
120
10 mA
i
~
··
2
COl.LECTOR-TO-EMITTEft VOLTAGE
1 1
(VCEI~5V f--- -+
I
Vceo('us) 0.1· 0 100 -

~ 10: r------r-r--\'Z."i. C1I I
0.1' 0 45 60 80
!§'iOI Ii
0.1' 120 - u~ "
r-vfo"'[tb
VceR('"') 100 - v ~~ '<I
(RBe) = lOon
0.1'
IS I
-1.5
0.1'
0.1·
45 60 80
120 - " Irr
~
tA 2
~
0.'- "~
~ .,.·,
VCEV(sUS) -1.5 100 -
. • 'I , , ..,
-1.5 0.1· 45 50 80
1\\
, ..
l' 750 - 750 - 750 -
4' 750 - 750 - 0.1 1
,
3' 2.5 - 2.5 - 2.5
V
4' 2.5 - 2.5 - Fig. 4 - Typical dc-beta characteristics for
Vce("')
3' 0.006
4' O.oos
-
- 2.5 - 2.5 -
2.5 - 2.5 - 2.5
V BDX33-series types.
4 V
h'e
' - I kHz
1000 - 1000 - 1000 - 100e - 1000 -
h'e 20 20 20 20 20
'-1.0MHz
eSlbb
RBE -loon ,"r--r--r-1
L" 12 mHo types
BOX33 type," 1.5 4.5 120 - 120 - 120 - 120 - 120 -
L-3mH. mJ
BOX34'ypes 1.5 4.5 30 30- 30- 30- 30-
SIb
tp ... 0.6 s nonrep. 25 2.8 2.8 2.8 2.8 2.B
BDX33 types 38 1 1
A
BDX34 types -20 -3.5 - -3.5 - -3.5 - -3.5 - -3.5 -
-33 -1 -1 -1 -1 -1
1.78 - 1.78 - 1.78 - 1.78 - 1.78 ·CIW
• For p-n·p devices. voltage and current values Ire negative .
• Pulsed: Pulse duration· 300 I'S. duty factor'" 1.B%
b ES/b is defined as the energy at whidl second breakdown occurs under specified reverse bias conditions.
-0,\ -I
.. ,
COLLECTOR CURRENT IlCI-A
-10
.. ,-100
ES/b = 1/2L12 where L Is 8 series load or leakage inductance and I is the peak collector current.
Fig. 5 - Typical dc-beta characteristics for
BDX34-series types.
308 ___________________________________________________________________
POWER TRANSISTORS
BDX33,BDX33A,BDX33B,BDX33C,BDX33D,
BDX34,BDX34A,BDX34B,BDX34C
COLLEC~ SUPPLY VOLTAH lVccl-2Q v
... I• • -18 .ICJ~
.. - r-- I, 1-1
.!I
u 7.15
~
I
~
----- ~ -a
~
u .,
;e , I.'
~
~
~ -4
3 2.S -I-~ ·2
O.S
I • , Q -I -2: -3
• '10
IASE-lO-EMITTER VOLTAGE 1Y8£I-V COLLECTOR CURRENT (ICI-l. COLLECTOR-TO-EMITTER SATURATION \IOLlAGE [VC£ha'~..JiI
92CS-I9920

Fig. 6 - Typical transfer characteristics for characteristics for BDX33-series Fig. 8 - Typical saturation characteristics for
BDX33-series types. types. BDX34-series types.
COLLECTOR-rO-EMITTER VOLTAGE IVCEI--5 II
. ." 1.4-
1.2~
-.. '1!...
---
1-12.
I! I
......
E -10
~
§ :. 0.'
.....
u -7.5 I
w
..... Ie Iia (FORCED hFEJolOOO
!
~ ~
0,6 e
c
T "2!1 o
-S
I ><
0.'
"-.
f
! I,
-'S
...
SASE-lO-EMITTER IIOLTAGE IVeEl-V
.,
0.2
0.1
COLLECTOR CURRENT lIe I-A

5 6 1 ~ !t_1O
COI.L[CTOR-TO-EMITTEA' SATURATION VOLTAGE
, .
[VeE 1",1 I] - V

Fig. 9 - Typical transfer characteristics for characteristics for BDX34-series Fig. 11 - Typical saturation characteristics for
BDX34·series types. types. BDX33·series types.
COLI.ECTOR CURRENT IIe'-' A

COLLECTOR-TO-EMITTER VOL.TAGE (YCE'oS '1m
COLLECTOR-rO-fMITTEPt VOLTAGE [VCEI-S
CASE TEMPERATURE ITc'-ZS-C -
,
-c12!1
I
~ \0 i
I" II!
I
J
i ·
2.'
aASE-TO-[MlTTER VOLTAGE (VaEI-V-

f'REotIlNCY (11- MHI COLLECTOR-TO-EMITTER VOLTAGE IVCEI-V 1tCS- tHt$
Fig. 12 - Typical small·signal gain for Fig. 13 - Typical input characteristics for Fig. 14 - Typical output characteristics for
BDX33·series types. BDX33-.eries types. BDX33·series types.
COLLECTOR-TO-ENITTER VOl.TAGE tVCE}'·' v
·e
a -1.5
w
: -5
·2.5
2468 2468 2468 2 468 2468:2 -I -2 -)

O,QOI 0.01 0.1 I 10 10
aASE-TO-EMITT£R VOLTAGE IVaEI-V
FREQUENCylll-MHr COLLECTOI'I-TO-EMITTEA VOLTAGE: IVCEI-V
Fig. 15 - Typical small-signal gain for Fig. 16 - Typical input characteristics for Fig. 17 - Typical output characteristics for
BDX34-series types. BDX34-series types. BDX34-series types.
309
POWER TRANSISTORS
BDX83, BDX83A, BDX83B, BDX83C

Features:
15-Ampere N-P-N Darlington Power Transistors • Operates from Ie without predriver
• Low leakage at high temperature
40-60-80-100 Volts, 125 Watts Gain of 1000 at 5 Amperes • High reverse second-breakdown capability
Applications:
• Power switching
The RCA-BDX83. BDX83A. BDX83B. and 1---------, • Hammer drivers
BDX83C are monolithic silicon Darlington I I • Series and shunt regulators
transistors designed for low- and medium- I I • Audio amplifiers
frequency power applications. The high gain
of these devices makes it possible for them : I
to be driven directly from integrated circuits. I I TERMINAL DESIGNATIONS
The BDX83-series types are supplied in the I I
L _______ ~-.-J
JEDEC TO-3 hermetic steel package.
Fig. 1 - Schematic diagram for all types.

JEDEC TO-3
BDX83 BDX83A BDX83B BDX83C
veBC ............................. . 45 60 80 100 V
'00
VCEO(SUS) . . • • . . . . . . . . . . . • . . . . . • . .• . 45 60 80 100 V
VeBO .••........•.•...•••.••......• 5 5 5 V
IC .................................. 10 10 10 10 A
ICM .. .... ..... ..... ... ... .......... 15 15 15 15 A
IB •.•••..•••.••.....•..•..•......•.. 0.25 0.25 0.25 0.25 A
PT
125 125 125 125 W
Derate linearly at 0.714 w/oe
Tstg • TJ ............................ . - - - - - -65 to +200 - - - - -
NUMBER OF THERMAL CYCLES 92CS· 19922
TL
At distances ;;. 1/32 in. (0.8 mm) Fig. 3 - Thermal-cycling rating chart for
from seatina Diane for 10 s max. . •..••. - - - - - - 235 - - - - - - al/ types_
··
COLI.ECTOR-TO-EIIIITTEIit . ., . . tvcl). IY
=
~
=
~
Iuk.
.. :
Itt ·
~2 \<~
Ii;
u •
.;;~
·
a •
~ Ill.
~ ill
~
.
I
I'
OJ
CClt.LEtTOlt CUMlDfT CJc)-A
Fig. 4 - Typical dc-beta characteristics

...-..,...
for al/ types.
·· CUMDT Ilct-IA
COLUCTOIt-TO-I!tII1'TDI VO&.TMlI'lc:Ele,
·
CAli TlIIINItATURI "C).IPC
'1
,
I l""-
I ··• 1\
:
i ·
...·
~
COLLECTOR-'IO-EMITTER VOLTAGE ("cEI-V

-"> . • 'OJ . ..
'REOUEJtCY(Ii-lIIHr
" ~ . • 8'0
92CS·,,9.9
92CII-29144 Fig. 5 - Typical smal/-signa) gain for
Fig. 2 - Maximum operating area for all types. aI/ types.
310
POWER TRANSISTORS
BDX83, BDX83A,BDX83B, BDX83C

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2SOC Unless Otherwise
Specified
CHARAC·
VOLTAGE CURRENT
TERISTIC BDX83 BDX83A UNITS
V de Ade
SYMBOL
VCE VEB VBE IC IB Min. Max. Min. Max.
ICEO
20 0 - 1 - -
30 0 - - - 1
ICEV
45 -1.5 - 0.5 - -
60 -1.5 - - - 0.5
rnA
TC= 150°C
45 -1.5 - 3 - - IASE-TO-EMITTER VOLTAGE IIIBEI-V
60 -1.5 - - - 3
lEBO 5 0 - 5 - 5 rnA Fig. 6 - Minimum values of reverse·bias
O.la 45 - 60 - V second·breakdown characteristic
VCEO(sus) 0
(E Sid for al/ types.
3 la 750 - 750 -
hFE 3 5a 1000 - 1000 - COLLICTOft- TO-EMITTER VOLTAGE t VCE I- J II t:t++
3 loa 250 - 250 -
3 5a - 2.8 - 2.8 "
VBE V
3 loa - 4.5 - 4.5 1'1.11
I
VCE(sat) 5a om a - 2 - 2 i! 10
V
~
VF -10 - 4 - 4
I ,.
hfe '!
f = 1 kHz
ihfei
5
5
1
1
1000
20
-
-
1000
20
-
-
I ·
.
f = 1 MHz I •
..... ·T'O--IMfrTEJI VOLTAGE IIIIE'-Y
ES/bb
Fig. 7 - Typical input characteristics
L=12rnH, -1.5 4.5 120 - 120 - rnJ
for all types.
RBE = 100 n
IS/b 35 2.2 - - - COLLECTOR-TO-I!:MITTU VOLTAaE IVe!'- :5 II
t = 1 s, 50 - - 0.9 - A
non rep. 30 4.16 - 4.16 -
ReJC - 1.4 - 1.4 °C/W
apulsed: Pulse duration == 300 1..15, duty factor = 1.8%.
.
u 7.'
b ES/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions. e~
ES/b = %U 2 where L is a series load or leakage inductance, and I is the peak collector current.
82.'
I
BASE-TO-EMITTER VOLTAGE IVaEI-V
12CS-I'99l!4JtI

for all types.
COllECTOR SUPPLY VOL.TAGE IVcc'-20 II

!I~ 1 8 · -182. " Ie/SOO, TC"ZS"C
" 100,I'·C
100,150·e
--.- ....... .!.!

2.'1-""""=---+--~-j-+-+-+""'f~-.!::i
f
leila {FORCED 1IF'£'·1000 i
1C·'50·C
O•• I-----+-_+_+--+-r-(..!I..
o I 2 :5 .. 5 Ii 7 a
COLLECTOR-TO-EMITTER VOLTAGE tlteEI-v COU.ECTOA-TO-EMITTER SATUfl4TION VOLTAGE [VCE 110II]-V COLLECTOR CURRENT IIcl-A
921:$-20156
Fig. 9 - Typical output characteristic, Fig. 10 - Typical saturation characteristics Fig. 11 - Typical saturated switching time
for al/ types. for al/ types. characteristics for all types.
311
POWER TRANSISTORS
BDX83, BDX83A, BDX83B, BDX83C
ELE:CTRICAL CHARACTERISTICS, At Case Temperature (Tci = 2fiOC Unless Otherwise

Specified

CHARAC·
VOLTAGE CURRENT
TERISTIC BDX83B BDX83C UNITS
Vdc Adc
SYMBOL
VCE VEB VBE IC IB Min. Max. Min. Max.
40 0 - 1 - -
ICEO 50 0 - - - 1
80 -1.5 - 0.5 - -
ICEV 100 -1.5 - - - 0.5
rnA
TC = 150°C 80 -1.5 - 3 - -
100 -1.5 - - - 3
lEBO 5 0 - 5 - 5 rnA
VCEO(sus) 0.1a 0 80 - 100 - V
3 1a 750 - 750 -
hFE 3 5a 1000 - 1000 -
3 lOa 250 - 250 -
3 5a - 2.8 - 2.8
V
VBE 3 lO a - 4.5 - 4.5
VCE(sat) 5a O.Q1a - 2 - 2
V
VF -10 - 4 - 4
hfe
f = 1 kHz
5 1 1000 - 1000 -
Ihfel 5 1 20 - 20 -
f = 1 MHz
ESlb b
L= 12rnH, -1.5 4.5 120 - 120 - rnJ
RBE = 100 n
ISlb 70 0.37 - - -
t = 1 s. 85 - - 0.25 - A
non rep. 30 4.16 - 4.16 -
ROJC - 1.4 - 1.4 °C/W
aPulsed: Pulse duration· 300 MS, duty factor· 1.8%.

b ES/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions.
ES/b ;;:; %L1 2 where L is a series load or leakage inductance, and I is the peak collector current.
312
POWER TRANSISTORS
BDY29
Hometaxial-Base High-Current Silicon Features:
• HI.. dissipation capability
N-P-N Transistor • HI .. VCEX ratings
.15-A specification for hFE and VCE{l8d
• Low saturation voltage with hi.. beta
Rugged Silicon N·P·N Device> for Applications
in Industrial and Commercial Equipment
The RCA-BDY29 is a homet8xjal-base silicon, n-p-n transistor TERMINAL DESIGNATIONS

driver and output stages. dc-to-de converters. inverters. and
intended for a wide variety of high-power high-current appli- solenoid (h!lmmer)Jrelay driver service.
cations. Typical applications for the BOY29 include power- c
The device is supplied in the popular JEDEC TO-3 package.
'~
switching circuits. audio amplifiers, series- and shunt-regulators.
MAXIMUM RATINGS, Absolute-Ms.imum Values:

COLLECTOR·lO·BASE VOLTAGE .......... . V CBO 100 V
COLLECTOR·lO·EMITTER VOLTAGE:
With -1.5 V (V SE ) & R Be = 100 n ,....... . VCEX 90 V
With base open ...• , .• , ••....•....... , ... . VCEO 7' V
EMITTER·TO-BASE VOLTAGE ...•..................•...................... VEBO 7 V
JEDEC T0-3
CONTINUOUS COLLECTOR CURRENT .•.••••.•••••.•••••. 'C 30 A
PEAK COLLECTOR CURRENT ••....•.. 'CM 30 A
CONTINUOUS BASE CURRENT ................. .
TRANSISTOR DISSIPATION: 0 '.
PT
7.S A
At ~se temperatures up to.26 ,,c .. . ............ . 220 W

At case temperatures above 26 C •. Derate linearlv 10 2fXlc
TEMPERATURE RANGE:
a
Storage Operating (Junction) .................• -85 to 200 ·C
PIN TEMPERATURE lOuring soldering):
At di.tanea >1/32 in. 10.8 mml from seating plane for 10 s max. 230 ·C
ELECTRICAL CHARACTERISTICS, At Care Temperature ITci = 2!t'C Unless O_wIse $pBt:iflsd

VOLTAGE CURREN
CHARACTERISTIC SYMBOL BDY29 UNITS
Vdc Adc
VCB VCE VBE IC IB Min. Max.
With emitter open 'CBO 100 - 1 mA
With base·emitter junction reverse-biased ICEX 100 -1.5 - 1 mA •I TJ .. Jx.. zol.c
With base-emitter junction reverse-biased ; i'lo~1
& TC= lSO·C 'CEX 100 -1.5 - 10 mA 6
~ 100 ~ "e.
With base open 'CEO 60 0 - 2 mA
ii ·
" · ~ "'
I" 1'::~">
-
'1Tt1
Emitter Cutoff Current 'EBO -7 0 2 mA
j
DC Forward Current Transfer Ratio hFE 2 15" 15 60
· I~I~~I' ~ 'f • <1'(.)
.~ j--
Collector-to-Emitter Sustaining Voltage:

With base-emitter junction reverse-biased
(RBEI= lOOn VCEXlsus) -1.5 0.2 90 - V
. ,.... . . .. . , . ..'". ,
ro 10
·0
~
(RBE) = lOOn VCERlsu,) 0.2 B5 - V Fig. 1 - Thermal-cvcling rating chart.
'With base open VCEO(sus) 0.2 0 75 - V
Base-to-Emitter Voltage VBE 4 30" - 3.5 V
Collector-to-Emitter Saturation Voltage VCElsat) 15" ·1.5 - 1.2 V
COLLECTOA O-£IMTTER VOLTAGE !Vcr ,. "v
Second-Breakdown Collector Current:
With base forward-biased and 1-s, w
nonrepetitive pulse IS/b b 60 3.66 - A e
Second-Breakdown Engergy:
•Ii V-:
....
.'
With base reverse·biased and
L = 40 mH, RBE = lOOn ES/bc -1.5 5 SOO - mJ
~
!I,
~,
,
1'\."'+
~
Magnitude of Common-Emitter, Small-Signal,
Short·Circuit, Forward Current Transfer Ratio: 16 ia ,
.s..~
~'.
1=0.05MHz Ihlel 4 1 4 ITyp.)
~'S
'.
Common·Emitter, Small-Signal, Short-Circuit,
Forward Current Transfer Ratio:
1= 1 kHz hIe 4 1 40 -
I'
~
'1:---" ~,
E;.
~,
10 10
Thermal Resistance: COI.J.ECTOR Ct.IMENT1XC)-A
Junction·to-Case RBJC - O.B ·CIW
Fig. 2 - Tvpical dc beta characteristics.
·Pulsed; pulse dUration'" 300 IJ$. rep. rate::: 60 Hz; duty factor <;, 2%.
blSlb is defined as the current at which second breakdown occurs at a specified collector voltage with the emitter-base junction
forward biased for transistor operation in the active region.
cES/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions.
ESlb'" 1/2L12, where L is a series load or leakage inductance and I is the peak collector current.
313
POWER TRANSISTORS
BDY29
COLLECTOR-TO-EMITTER VOLTAGE IVeE) -2V
c
I 10
U I
!:! BASE-TO-EMITT£R VOLTAGE tYuI-V
.....
...
z
It:
It:
'"
U
It:
0
....
...u
oJ
COI-LECTOR CURRl:NT ttel/BASE CLRR£HT II I-to
oJ
0
U
0.1 00.511.21.111. 225

COI.L£C1OR-TO-EMITTEIt SATURATION IIOLTAGE'[VcEltotfl-V
IICS-IM.'
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V 92CS-24631 Fig. 5 - Typical saturation·voltage characteristics.

Fig. 3 - Maximum operating areas.
2 .. , '0 f. .. 6110:\ 2 . . . '10" 2 .. "!OII

'
ElCTERMAL BASE-ro-EMITTER RESISTANCEtRBE1-n
COL..LE.CTOR-TO-EMITTER VOLTAGE WcEI-V

It2CS-I'iSOl
Fig. 8 - Sustaining voltage vs. base-to-emitter
Fig. 6 - Typical input characteristics. Fig. 7 - Typical output characteristics. resistance.
314
POWER TRANSISTORS
BDY37
Features:
Hometaxial-Base, High-Current Silicon • High dissipation capability - 150 W
N-P-N Transistor • B·A opacification for hFE. VBE. and VeE( ..tI
• VCEX - 160 V min.
• Low .turation voltage with hi. beta
Rugged High·Voltage Device for Applications
in I ndustrial and Commercial Equipment
The RCA·BOY 37 is a hometaxial-base silicon n-p-n transistor TERMINAL DESIGNATIONS

and output stages, dc·to·dc converters, inverters, and solenoid
intended for a wide variety of high-voltage high-current (hammerl/relay driver service. The BOY 37 employs the c
'~
applications. Typical applications include power-switching popular JEDEC TO-3 package.
circuits. audio amplifiers, series- and shunt-regulator driver
MAXIMUM RATINGS, Absolut..lthx;mum V.'u.,:

COLLECTOR·TO·BASE VOLTAGE VeBO 160 V
COLLECTOR·To-EMITTER VOLTAGE:
With bill open " ..... . veEO 140 V
With reverse bia. IVSE) of -1.5 V VeEX 160 V JEDECTO·3
EMITTER·TO-BASE VOLTAGE .... , VEBO V
COLLECTOR CURRENT:
Continuous ......... Ie 16 A
Peak .... _...... . 3D A
'CM
BASE CURRENT:
Continuous ............. . 'B A
Peak, ......... . A
'BM
TRANSISTOR DISSIPATION: PT "
At ca.. temperaturel up to 2S0C _ 150 W
At til.. tamperaturt. abcwa 25°C Derale linearlv 10 200°C
TEMPERATURE RANGE:
Star." a Operatinll (Junction I -65 to +200 <>c
PIN TEMPERATURE lOuring Soldering):
At diltllnces 2:. t 132 in. 10.8 mm} from case for to s max. 230 <>c
•
1100
TJ~~ ••l
, ~~".!
I . I'\..
~
... ~
i . ~,~
i l\'" ~."1-
- r:J..-~ ['\
.. .. .
I ''o'c
,. ~ IV ~ ~
's • • a~,
i 10" • • 10'
NUM'ER 0' THUMAL CYCLES
...u Fig. 2 - Thermal-cycling rating chart.
~0::
0::
:::l
U
0::
oI-
U
UJ COLLECTOR·TO-EflNTTER VOLTAGE IVCE)·"vlll I
..J
..J
o
12 r... I IIII I IIII I
U
i I~S£ ~E~~'T~RE ;T~)~~•• '~-
I /1'-'
r<
I 2...
i.--' '\..
0.1
i
~
I\,.
~
~ I=:
de> dl I I. io
6 100 COlL£CTDR a.tR£NT CICI~'"
VOLTAGE (VeE I-V
92C5-21477
Fig. 3 - Typical dc beta characteristics.
315
POWER TRANSISTORS
BDY37
·ELECTRICAL CHARACTERISTIcs, At Case T_ture ITc/- 1f{'c UnI_ Otherwfse [lp«iff«l
CHARACTERISTIr. SYMBOL VOLTAGE CURRENT BDY37 UNITS
Vdo Ado
Vca VCE VEa VaE 'C 'E la Min. Max.
CoIlector-<:utoff Current:
With emitter open ICBO 140 0 - 2 mA
With base-emitter iunction

reverse-biased ICEX 140 -1.5 - 2 mA
With baslHlmitter junction

reverse-biased and TC = 150°C ICEX 140 -1.5 - 10 mA
With base open ICEO 120 0 - 10 mA

Emitter-Cutoff Current leBO 7 0 - 5 mA
DC Forward-Current Transfer Ratio hFE 4 B" 15 60
Collector-to-Emitter Sustaining
Voltage:
biased (RBE = 100 ill
VCEX(sus! -1.5 0.1 160 - V
With external base-to-emitter Fig. 4 - Typical transfer characteristics.

resistance (RBE! = 100 n VCeR(Sus! 0.2' 160 - V
With base open Vceo(sus! 0.2" 0 140 - V

Base-lo-Emitter Voltage VBe 4 B" - 2.2 V
VCE(sati B" 0.8 - '1.4 V
Voltage -
Second-Breakdown Collector
Current: 10, CCLLECTOFI CURRENT {ICI/BASE CURRENT (Is)' 10 ~
With base forward-biased and
IS/I>'> 60 2.5 - A
·
t ·,
1.0$ nonrepetitive pulse
CASE TEMPERATURE It 1"2sec
With base reverse-biased and /[/
-1.5 2.5 0.12ti - J
" ~>(''''C
EW
I ,·
L- 4OmH. RBE- loon
Magnitude of Common-Emitter.
!··,
Small-Signal. Short-Circuit,
Forward-Current Transfer Ih,.1 4 1 4 -
Ratio ( f - 60 kHz)
Common-Emitter. Small-Signal,
Transfer Ratio (f = 1 kHz)
lIte 4' 1 40 - 0.1
, . ..
Iii I , . ..
Thermal Resistance:
Junction-to-Cue R8JC - 1.17 ·CIW
• Pulsed; pulse duration "" 300 IJS. rep. rate = 80 Hz. duty factor < 2%. Fig. 5 - Typical staturation-voltage
b ISIb is defined as the current at which second breakdown occun at a specified collector voltage with the emitter·base junction characteristics.
forward-biased for transistor operation in the active region.
C Es!b is defined 81 the eneigy at which second breakdown occurs under specified revene--bias conditions. Es/b. 1f2U 2 wit....
L is a series load or leakage inductance and I is the peak collector current.
0.$ I 1.$ SASE·TO-£fIIITTER VOl.TA8E (YR)-Y

COLLECTOR-TO-,Mlnp
Fig. 6 - Typical output characteristics. Fig. 7 - Typical input characteristics.
316 ____________________________________________________________
POWER TRANSISTORS
BDY71
Features:
Hometaxial-Base, Medium-Power • Maximum safe-area-of-operation curves for dc ahd pulse
Silicon N-P-N Transistor operation
• Vcev(sus) = 90 V min
For Intermediate·Power Applications in Industrial and Commercial Equipment • Low saturation voltage: Vce(sat) • 1.0 V at IC "" 0.5 A
Applications:
The RCA-BOY71 is a hometaxial-base silicon n-p-n tran- • Power switching circuits
sistor intended for a wide variety of medium- to high-power
• Serial' and shunt-regulator driver and output stages TERMINAL DESIGNATIONS
applications. It is supplied in the JEOEC TO-66 hermetic
package. • High-fidelity amplifiers
'0
. C
BOY71
COLLECTOR·TO·BASE VOLTAGE. veBO 90 V
COLLECTOR-TO-EMITTER VOLTAGE:
With base open ... _ ..... . VCEO 55 V
With external base-Io-emitter resistance (ReEl = loon VCEA(sUS 60 V
With base reverse-biased (VaE '" -1.5 VI VCEV(sus) 90 V
JEDEC TO-66
EMITTER-TO-BASE VOLTAGE ..•. VEBO V
CONTINUOUS COLLECTOR CURRENT ..
CONTINUOUS BASE CURRENT .
'e 4 A
'8 2 A
AI casa temperature up to 2SOC •. 29 W
At temperatures above 25°C Oera1e line8llv to 2rxl c
TEMPERATURE RANGE;
Storage & Operating (Junction) . -65 to 200 'e
PIN TEMPERATURE (During Soldering):
At distance ;;;;r.1I32 In. (0.8 mm) from seating plane for 10 s max. 235 'e
104 2 4 ' 'lOS 2 4".06

HUMBER OF THERMAL CYCLES
Fig. 2 - Thermal-cycling rating chart.
COl..LECTOR-TO-EMITTER VOLTAGE (VCE'* 4V

ll~
III ..to
i 80
111'~1
. H~, .,~..~o
.
..'"~
Z
,
1 -;.~&
~
60
_hlt~t.2
~
1\\
r
~
g
0.01 0.1
COLLECTOR CURRENT l"Ic)-A
..J
..J
8 Fig. 3 - Typical dc beta characteristics.
COLLECTOR-TO-EMITTER VOLTAGE (VeE" ·4V

CASE TEMPERATURE ITel-2S· C
•
j, ,.. r-
,I
,. V
~ .......
I ['\..
10 t os
COLLECTOR-TO-EMITTER WLTAGE (VCE)-V
92CS-2~969
~
.. I'.
Fig. 1 - Maximum operating areas for BDY71.

o. , , , . .
'0
o. 00,
COLLECTOR CURRENT {"Ie'-IIIA
2 ..
Fig. 4 - Typical gain·bandwidth product.
317
POWER TRANSISTORS
BDY71
ELECTRICAL CHARACTERISTICS, At c... TemfJfNOfIHII (Td ~ 25"C UnI... ~SptlClf/ed

Vdo Ado BDY7'
VCE VBE IC la Min. ~x.
With base open ICEO 30 0 - ~.5 mA
With base-emitter ICEX

junction reverse-biased 90 -1.5 - I mA
atTC = 15O"C ICEX 90 -1.5 - 6 mA
Emitter-Cutoff Current lEBO -7 0 - 1 mA
Sustainin~ Voltage:
With base open VCEO(susl 0.18 0 55 - V
emitter resistance VCER(susl 0.18 60 - V
(RBEI = loon
DC Forward-Current hFE 4 3' 5 -
Transfer Ratio 4 0.5a 60 200
Collector-ta-Emitter VCE(SO.) 0.58 0.05s - I V

Saturation Voltage 3' I' - 6
Base-ta-Emitter Voltage VBE 4 0.5 - 1.7 V
Common-Emitter, Small-Signal,
Current Transfer Ratio fhfe 4 0.1 0.03 - MHz
Cutoff Frequency
Gain-Bandwidth Product: 'T 0.2 BOO - kHz

1-0.4 MHz
Common-Emitter.
Forward Current Transfer hIe 4 0.1 25 -
Ratio:
1= 1 kHz
Forward-Bias Second Break-

down Collector Current:
t '" 1-$ nonrepetitive
ISlb 55 525 - mA
Thermal Resistance:
Junction-to-Case RBJC 6.~ - °CIW
-Pul"': Pulte duration" 300~. duty faclOr .. 1.8'10.
t I.,
H
i 1.0
I 0.'
~ ~ ~ ~ ~
COlLECTOR-TO-EMITTER VOLTAGE (VCE1-V
~ W
t2CS-12505R1
Fig. 5 - Tvpical transfer characteristics. Fig. 6 - Tvpical input characteristics. Fig. 7 - Tvpical output characteristics.
318 _________________________________________________________________
POWER TRANSISTORS
BFT19, BFT19A, BFT19B

Features:
High-Voltage Silicon N-P-N Transistors, • Maximum sa~e-area-of-operation curves
For High-Speed Switching and Linear-Amplifier VCBO = -400 V max. (BFT19B); -300 V max. (BFT19A);
Applications in Military, Industrial and Commercial Equipment -200 V max. (BFT19)
VCEO('u,) = -350 V max. (BFT19B); -2S0 V max. (BFT19A);
-150 V max. (BFT19)
RCA-BFT1"9, BFT19A, and BFT19B are silicon p-n-p tran- Typical applications include high-voltage differential and
sistors with high breakdown voltages, high frequency response, operational amplifiers; high-voltage inverters. and high-voltage.
and fast switching speeds. These transistors differ in their low-current switching and series regulators.
voltage ratings. They are supplied in the JEDEC TO-39
hermetic package.

COLLECTOR-TO-BASE VOLTAGE
With base open ................... .
With external base-ta-emitter resistance (RSEI = 100 n ... .
EMITTER-TO-BASE VOLTAGE ........................... . VEBO
VCBO
VCEO(sus)
VCER('u,)
BFT19
-200
-150
-200
-S
BFT19A
-300
-260
-300
-S
BFT19B
-400
-350
-400
-S
V
V
V
V
,6"·,,,
JEDECTD-39
9ZCS-27!5IZ
COLLECTOR CURRENT (Cantinuaus) ... . IC -1 -1 -1 A

BASE CURRENT (Cantinuaus) ......... . IB -O.S -O.S -O.S A
At case temperatures up to 2Sc C ..... , .. W
At case temperatures above 25° C •... , ..... . D'fat' linearly to 2QOoC
At ambient temperatures up to 25°C ........ . 1 1 1 W
At ambient temperatures above 25°C ........ , Derate linearly at 5.7 mWfC
COlLECTOR.TO.EMITTER VOLTAGE ('ICE) g·10V
TEMPERATURE RANGE:
Storage and Operating (Junction) .......... . .....--.-65 to 200---..... ·C
190'" . . . . r-.
PIN TEMPERATURE (Ouring Soldering): ,-tl
~ 80
At distance;;;;" 1/32 in. (0.8 mml from case for 10 s max. . .. ·C
-25S
; " V
ELECTRICAL CHARACTERISTICS. At Case Tempel'lIrul'B (Tc) = ~C
TEST CONDITIONS LIMITS I:I ~ r- I-
-#t.~1.Q.
'tiC
IT -
Vea
VOLTAGE
V.,
VeE VEa fe
CURRENT
fE fa ....
BFT11
MD.
BFTllA
MI•• Mall.
.FT1..
Mi•• .....
UNITS
~ r- . ~II r-~
l ~...
f!-
C
Coltector·CutoffCurrent:
--100 -100
i~ ·" J...+.H- II l\'
.. ..
ICBO -200 -100 .A
With emitttr open
Emltter·CutoffCur"nt
DC Forward-Currellt
lEBO
-,00
10
-,
10 20
-100
20
-100
20
-100
-100 .A
_0.1 2
1111
, , • 0'II ,
-"
, ,l\ , -100
.
COLLECTORCURREMTUcl-mA
-30
h'E
-10 -50
25
" 25
Fig. 1 - Typical dc beta characteristics.

CoUectOf'-to-EmiuerSust.ining
Voltage
-,. ..
--
With base open VCEOlsusl -10 -1S08 -250'
....
COLLECTOR. TO-EMITTER VOLTAGE ('ICE) :.10 V
Wllhellternillbase·to-emitter
VCERbusl -10 -2000 -
CASETEIlf'9ATURE(Tc)- Z5"C r-+-H-ti
resitt.nceIR SE )= 100n
Basa·to-EminerSalunulonVollfge VBElsall -'0 -, -1.8 -1.8 -fB

Coliecto.-·to·Em.tlar Saluration Vollage VCElsatl
-10
-30 -,-f -1
-2.S
-1
-2.5
-1
2.' ~ .~-+-+-~+.f/+--+~++-+--+-+~
Cammon·Emitter, Sm.U-S'grlar, Shorf· ~~~-+-+-~+f-+-+-\++--+-+-~'
Circuil,ForVOBrd-CurrenITran,fer hf• -fO -5
Ratio lat 1 kHzl " 2S
1'~+-1-hH--~~HH~r-~-H
Magnilude of Common·Emiller, Small·
Signal, Shorl·Circuil Forward·
-10
~
r~"'7'I--+++---~+++--+--t--+-H
CurrenlTran,fer Ihf·1
Aafio(alSMHII
Common·Base, Short-Circuit, Input
Capecl1ancalat 1 MHz! e,b -5 75 ,. 75 pF ~ "~,,~~~~~~~-+-+-~1--+-+-~
Output Capaclllll1ce (all MHzl
S8<:~nd-Brelkdown ColieclorCurreot:
With base lorward blesed
cob
'Sib
-fO
-fOO -SO
15
-50
15
-50
f5 pF
mA
• o.-,
COlLECTOR CURRENT (1c1-1IIA
. ( '-~ooo
Therrrtal Resiliance:
IJunction·tooCasB)
"'JC ,. °CJW Fig. 2 - Typical gain-bandwidth product.
a CAUTION: Tha sUllaining vollages IICEOlsus) end IICER (sus) MUST NOT be me'$Ur~ on a curve tracer.
" 35
I em . 2~e
i~' .
. ~.
i _BO;
~
.. 1''', ::,,:;,:'
rId,:;Tq:::
·20 ~40 -60 -80 -100 -120
COLLECTOR CURRENT IIcJ-mA
_. -ow _om 'ICI-lnl!
COLLeCTOR.TO-EM1TTER VOLTAGE (Vcel _ v
Fig. 5 - Typical collector-to-emitter
Fig. 3 - Typical input characteristics. Fig. 4 - Typical output characteristics. saturation voltage.
319
POWER TRANSISTORS
BFT19, BFT19A, BFT19B
'"eI COL-LECTOR CURRENT 11CI- inA
Fig. 7 - Typical turn·on time characteristics.
t-
Z
LIJ
0::
0::
;:)
o
0::
o
t-
~
...J
...J
o
o
COLL£CTOft CURRENT lIe 1-1111.

UC!H7514
Fig. 8 -' Typical storage-time characteristic.
_I 4 6 8_ 10 4 6 8-100

92CS-22544
eo 100 110
1 -- COLLECTOR CURRENT IIel-IIIA

"CI-!?tIlS
i Fig. 10 - Typical fall· time characteristic.
I
320 ________________________________________________________________
POWER TRANSISTORS
BFT28, BFT28A, BFT28B, BFT28C,

High-Voltage Silicon P-N-P Transistors Featunn:
• Mlxlmum ..........-of-opennion curvet
• High volta.. min..:
For High·Speed Switching and Linear·Amplifier
Vcao - -1&0 V nax, IBFT 281: -200 V mIX, IBFT28AI:
Applications in Military, Industrial and Commercial Equipment -260 V max, 'IBFT 28 BI: -300 V mIX, IBFT28C1
VCEOIIIIII - -100 V mox, IBFT 281: -1&0 V mox, IBFT28AI:
The RCA·BFT28, 8FT28A, BFT28B and BFT28C are .illcon Thill translstora differ primarily in their voltage ratings. -ZOO V max, IBFT28BI: -260 V mox. IBFT28CI
p.n-p transistors with high breakdown voltages, high frequency Typical applications include hlgh-voltage differential and
response, and fast switching speeds. They are supplied in the operational amplifiers; hlgh-voltage inverters; and high..yoftage,
JEDEC TO-39 hermetic package. low-current switching and serll' regulators.
MAXIMUM RATINGS,AbsoIUtIO-M..imum VIII.-:

BFT28 BFT2IA Bnaa BFT28C
COLLECTOR·T()"8ASE VOLTAGE .•..•..•.•••.••.•..•• ,. Vceo -160 -200 -260 -3DO v
COLLECTOR·To-EMITTER SUSTAINING VOLTAGE:
With .external bli4Mo..mltur ....Itt.nee (RBEI- 100n •...• VCERlsus) -160 -200 -260 -3DO v
wtth bite OPin •••.••.••..•.•••....•••••.•..••••••• VCEO(Ius) -100 -160 -200 -260 V
EMITTER·T()'BASE VOLTAGE ...•...•.•.••..••••.••.•• V Eao -4 .... .... "4 V
COLLECTOR CURRENT •.•..•.••..•••••.••.•..•.•.•.• IC -1 -1 -1 -1 A
BASE CURRENT. . • • . • . • • • . . • . . • • . • •• • . • • • • • . . • • • • • •• la -0.5 -0.5 -0.6 -0.& A JEDECTO-a
TRANSISTOR DISSlrATION: Q
:~==~:::::Q~ Q:::::::::::::::::::::: • •
o.".elinllrly to 200°C
w
At ambient temper.tum up to 50 C •.••••••.••.•••••.• 1 1 1 w
AtafTtMenttempemure. .bove50°C ..... Deret, linearly et S.7 S.7 ••7 ••7 _tc
TEMPERATURE RANGE:
StOl'lfl and Opem:ing (Junction) ..................... . - - - --86 to +200 - - - - ·c
LEAD TEMPERATURE CDurlnglOldlring):
At distance> 1/32 In. (Q.8 mrnt from_ti", plan. for 10.IN•. 26& ·c
ELECTRICAL CHARACTERISTICB, At Cut T_ _ ITcI- 2If'c
-. -, -, --
TEST CONDITIONS LIMITI
VOLTAGE CURRENT
CHARACTERlmC SYMBOL BFT28 BFT2IA BFT288 BFT2IC UNITI
Vdc ",Alii:
VCB VCE VEB IC IB Min, Min, 1IoIn, 1IoIn,
Collector·Cutoff Current:
With emitter open ICBO
-50
-75
-
-
-1
-
-
-
-
-1
-
-
-
-
-
-
-
- /JA
-150 - - - - - -5 - -6
Emitter-Cutoff Current JEBO -4 0 -100 - -100 - -100 - -100 /JA
DC Forward-Current
Transfer Ratio hFE -10 -10" 20 - 20 - 20 - 20 -
Collector-to-Emitter Sustaining
Voltage:
With blse open VCEOI.u.1 -10 0 -100" - -160" - -ZOO" - -260" - V
With ,xternal blse-ta-emitte'

resistance IRBel-100n
VCERI.u.1 -10 -150" - -ZOO" - -260" - -300" - V
Base·to-Emittef Saturation Voltage VBElsa" -JOC -3 - -1.5 - -1.5 - -1.5 - 1.5 V

CoIlector·to·Emitter Saturation
Volt...
Vce(..,1 -10" -1 - -0.6 - -0.6 - -6 - -5 V
Common-Eminar, Small·Signal,
Short-Circuit. Forward·Current
Transfer Ratio:
f o l kHz hie -10 -5 25 - 25 - 25 - 25 -
Magnitude of Common·Eminar.
Small·Signal. Short·Circuit
Forward-Current Transfer Ratio:
f =5 MHz Ihlel -10 -30 5 - 5 - 6 - 6 -
Common-Base. Short-Circuit.
Input capacitance:
1= 1 MHz Cib -6 0 - 75 - 75 - 76 - 76 pF
Output capacitance:
f=1 MHz Cob -10 - 15 - 16 - 16 - 16 pF
Forward-Bias. Second· Breakdown
Collector Current:
0.4-1 non-re..t~tive pulse IsM' -so -62.5 - -62.5 - -62.5 - -62.5 - mA
Thermal Resistance:
Junction-to-Case F\gJC - 36 - 36 - 36 - 35 CIW
-cAUTION: Tho sustaining ""It_ VCEOlsu.1 and VCERlsusl MUST NOT be maa.urad on. curve "_r.
bl Slb is dlfined as the current It wftich second breakdown OCCUH at a specified collector voltage .
.....11Od, pul.. durltion - 300 /IIi; duty f_r .. 2110,
321
POWER TRANSISTORS
BFT28, BFT28A, BFT28B, BFT28C
20 40 &0 10 100 110

CO\.LECTOR CUfilRENT Uel-fIIA
Fig. 2 - Typical turn·on time characteristic

for all types.
20 40 .. ..
COL.L.ECTOR CURRENT tlel-mA
100 110
Fig. 3 - Typical storage·time characteristic

COLLECTOR-TO-EMITTER VOLTAGE (VCE) - V 92CS'24599 for all types.
Fig. 1 - Maximum safe operating areas.
.
COLUCTCJR. TO-EIITTER ¥OLTAGE {Veil =.10 'I «IU.!(JOI. TO.IIITTfi!R VCIL TAGIIVal -.10 v
. CAR! TnPERATUMl fTcl- ZJIIC
itO
10'
<I!
J...--t-
. i ..
I" l/
i. ! .. ,....
I~
i. £...-
I- I-~~.'<rl·
-.t'
I-
i ./
\-
~II
:r..p:p
....'
......
~ ~
, ....., , ... ... , ........
..
10
"
., $ '._
, ... .1110
CCLLKTOR CUIlID' ffcl - ..A
, '!_
nwIIl
~
.11.1
I
.
IIII
" -I
I
-10
I
I
COLLICTOII CUI8I!MT (fcI":" 1M

-110
COLL'ECTOR CURRINT 11CI-M'"
Fig. 4 - Typicaigain·bandwidth product for Fig. 5 - Typical dc beta characteristics Fig. 6 - Typical fall·time characteristic
all types. for all types. for all types.
lA5!.fO.I!lrrmtVOLTAGe (V1f)- v COLLICTOR· fO.lllTTER VOLTAGE (VeEI- 'I COU,ECTOR CURRENT tlel-MA
ttCS-24')O
Fig. 7 - Typical transfer characteristics for Fig. 8 - Typical output characteristics for Fig. 9 - Typical collector·to-amitter
all types. all types. saturation voltage for all types.
~2 ______________________________________________________________
BU106
Features:
Epitaxial-Base Silicon N-P-N Transistor •
•
Maximum safe·area·ot·operation curves
Low saturation voltages
For Horizontal Deflection for Small-Screen • High voltage ratings
Black-and-White TV • High dissipation rating
8U106 is a silicon "-P-" transistor with a pi-nu epitaxial· This transistor is supplied in the JEDEC TO-3 hermetic
layer construction. This device is supplied in a JEDEC package.
T()"3 hermetic package. The BU106 is primarily intended
for use in horizontal-deflection output stages in smali·screen
black-and·white television receivers.
MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE VCBO 325 V

With base open . VCEO(sUS) 140 V
V JEDECTO-3
With base reverse-biased (VeE) between -2 V ,.... 8 V VCEV(sus) 325
EMITTER-TO-BASE VOLTAGE VEBO 8 V
CONTINUOUS COLLECTOR CURRENT IC A
PEAK COLLECTOR CURRENT 10 A
CONTiNUOUS BASE CURRENT _ IB 4 A
At case temperatures up to 250C and VeE up to 40 V . 75 W
At case temperatures up to 25°C and VeE above 40 V . See Fig. 3
100
At case temperatures above 25°C Derllte linearly to 2ori'c 0
·
TEMPERATURE RANGE:
Storage and Operating (Junction) . -65 to +200 "C •I
PIN TEMPERATURE (During Soldering): [ r-...
At distances';;:: 1/32 in (0.8 mm) from Seating plane for 10 S max ..
ELECTRICAL CHARACTERISTICS. At 0... TemptlRlIHrIlTc} • 25"C Unltla Otherwise Specified

230 "C ~
Ii
iii
· \
~
CASE-TEMPERATURE
CHANGE CATe.) -ao-c
r-.
1\
VOLTAGE
Vole
TEST CONDITIONS
CURRENT
'.
Ad.
LIMITS·
BUl . . UNITS
:" 'r---
~ ·r--- 11\
. ~
"
. . . .. . , ",..
"~'\t·c
VCE '\feB V. . 'c 'E MlN_ MAX.

With base open 'CEO 100 I. ,
10
,
~ I~
10
, !tiC, 10 10'
NUMIER OF THERMAL. cveLES
With ba....mitter
......
junction reverse-
Withb8se-emitter
ICEV
325 -1.5 mA Fig_ 1 - Thermal-cycling rating chart_
COLLECTOR-TO-EMITTER VOLTAGE !VCE}'5V
9!CS·'Ie22
junction reverse-
biased and TC = 1000C
325 -1.5
90
1~
- '.
Emitter..cutoff Current leso 10 mA
I
~J
--- P
75
Collector·to-Emitter Sustain·
ing Voltage (See .-
~w
w"
~~60
i i
" ~
Figs. 4 and 5):
With base open 0.1· 140 a.
~1:t:45 I \
L\
CASE T!MPEAATUAE (TCI-25·C
With bue-emltter junction
V ~~
rever..,iased
-2 0.0" 32S ~~30
Emitter·to-&ase Voltage VESO 0.01 V
~~
"
: I
- ~
DC Forward-Current
Transfer Ratio
Base-to-emittar
Saturation Voltage
-FE
VBElsat)
4'
4' O_S '_S V

0
o.Ot
,I
I I
, .0.1
,
COLLECTOR CURRENT t leI-A
, . I
, , .
4' D_S V
Saturation Voltage Fig_ 2 - Typical dc beta characteristics_
Magnitude of Common-
Emitter, Small-Signal.
Shon-Circuit. Forward 10 0_2
(f=1 MHz)
Common ....
Output Capacitance Vcs'" 10 .50 pF
(f=1 MHz)
Forward-Bias Second Break-

down Collector Current 1.85 A
(1 ... non-repetitive pulse)
Switching Time:
o.se
Staraga (Vee = 40 V)
Turn-off (Vee" 40 V)\ 0.1 1.5
...
Thannal Resistance
2.34 oC(W 2 3 4 5
Junction·to·Case 10 COI.LECTOR CURRENT tIel-A
• Pulsed; pulse duration'::;; 350 I'So Duty factor - 2'1'. c IS1" IS2 - VIllus shown.
b CAUTION: TMIUn.ining vol. . VceO(tu". and Vcev1IUs). d Turn-off is mHIUred when VCE h.. reached a value of· 2 V and Ie Fig_ 3 - Typical saturation voltage characteristics_
MUST NOT be m....red on a curve tracer. ha dactaaed to 100 rnA.
323
POWER TRANSISTORS
BU106
C
I
...
!:!
8
10 100
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- V
92($-22793
COLL"",,·T',...ITT••, VOLT'GE'Vc:E!'5 V
,
.'.',"",·£,"TT" VOLTAGE eVH-v COlLECTQR-TO-EMITTER VOLTAGE lVa;J-V
Fig. 5 - Typical transfer characteristics. Fig. 6 - Typical output characteristics.
324 ___________________________________________________________________
POWER TRANSISTORS
BU126, BU133
High-Voltage, Power-Switching Silicon N-P-N Transistors
Features:
TV Colour/Monochrome Receiver Power
Supplies -900 and 1100 Deflection Angles
• Hermetic steel package -
The RCA-BU126 and BU133 are silicon JEDECTO-3
epitaxial-collector n-p-n power switching • Epitaxial pi-nu construction
transistors intended for use in switched-
mode power supplies of 900 and 1100
colour and black-and-white TV receivers.
These devices are hermetically sealed in a
steel JEDEC TO-3 package.
MAXIMUM RATINGS, Absolum-Maximum Val/Jf1$:

BU'2& BUI33
VCES 750 750 v
VCEV
VBE "-1.5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 750 v
vCEOCsus) • • . • • . • • • • . . • . . . . . . • . • . • . • • • • . . . . • 300 250 V
v EBO ' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . '. 6 6 v
~........................................ 3 3 A
ICM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 A
I S · · · · · · · · · · · · · · · · · · · · . .. . . . . . . . . . . . . . . . . . 2 2 A
PT
UPto 2SoC ... •. . • . . . . . . . . . . . . .. • • . • •. .. . . • SO 80 W
Above 250(: . . . . • . . . • . . . . . . . . . . . • • • • • • . . . . . . Derate linearlv to 2000C
TJ. T5tg • . • . . . . . . • • . • • . . . . . . . . • • • . . • . . . . . . . . - - - -65 to 200 - - - .C
TL
At distanc:es> 1/32 in. IO.8mm) from seating plane for 10smax. ---- 235 - - - - OC
COLLECTOR-lO-EMITTER VOLTAGE(VCE)-V 92CS-27758
ELECTRICAL CHARACTERISTICS. At Ca&e Temperatunl (TcJ = 2~C Unless Otherwise Specified Fig. 1 - Maximum operating areas for BU126, BU133.
VOLTAGE CURRENT UNITS
SYMBOL BUI28 BUI33
V d. Ad.
VCE VBE IC IB Min. Max. Min. MIX.
ICES 750 0 - 500 500 pA
TC··125·C 750 0 2 2 rnA
lEBO -6 - 5 5 rnA
"FE 5 I, 15 60 15 80
VCEO(sus) 0.1· 0 300" 25()b V
VBE(sat) 4' 1 1.5 1.5 V
2.58 0.25 10 10
VCE!"') V
4' 1 - 5 - 5
ISib 40 2 - 2 - V
t = 1 5 nonrep. 200 50 - 50 - rnA
10 0.2 3.5 typo 3.5 typo MHz JEDECTO-3
.
'T
VCC"50V 2.5 0.25<: 1.5.yp. 2.4 1.5 typo 2.4 ps
"
R8JC
VCC"50Vd 2.5 0.25<: 0.5 typo
-
0.9
2.1B
O.Styp. 0.9
2.18
ps
·CIW
a Pulsed: pulse duration "" 3001-'5, rep. rate'" 50 Hz. duty factor'" 2%
b CAUTION: The sustaining voltage VCEO(sus) MUST NOT be measured on a curve tracer.
c 181 = 182
d Fall-time characteristics measured in a typical switched-mode power supply show an average value of 0.16 ps.
325
BU207,BU208, BU208A
High-Voltage, High-Current Silicon N-P-N Features:
• AI-Ti-Ni Metalization - Clip Construction
Power-Switching Transistors • Ion Implantation for Stringent Control of
Diffusion and Electrical Parameters
For Horizontal-Deflection Circuit • Hard Glass-Passivation
Application in TV Receivers • Fast Switching Speeds
.. Low Saturation Voltages
• Wide Safe-Area-of-Operation
The RCA BU207, BU208 and BU208A are They are intended for horizontal-deflection
• Low Thermal Resistance
silicon n-p-n power switching transistors. circuit application in black and white and
These types utilize a trimetal metallization- color television receivers, and for other
process to achieve a balanced-current dis- applications where a combination of high- TERMINAL DESIGNATIONS
tribution throughout the chip. current handling capability, ruggedness, and
fast-switching speeds are required.
MAXIMUM RATI NGS, Absolute-Maximum Values:

BU207 BU208 BU208A
VCES 1300 1500 1500 V
VCEO(sus) . 600 700 700 V
VEBO 5 V JEDEC TO-204MA
IC 5 A
ICM' 7.5 A
IBM' 4 A - ~. COL.LECTOR-TQ-EMITTER YOl:TAGE:
CASE TEMPERATURE (TC'-ZS-c
tYeE'.'" -
-IBM' _ _ _ -3.5 A ; 6
2" ,
PT
_____ 12.5 W ~
TC up to 95°C. r-...
TC ~bove 95°C, Derate Linearly. _ _ _ 0.625 wfc ~ 2
...-
T stg ' TJ. . _ _ -65to 115 °c ~
Ii .
10 \
'TL
At distance;;' 1/16 in. (1.39 mm) from seating plane
for 10 s max. . . . 230 °c
I
61-"
'r--"-
2
--
--
"""-
I-- --,
- " ----'
~ "-
g
,
2 . 6 • 0.1 , 4 6 • ,
COLL.ECTOR CURRENT (Icl-A
2 4 6 •
10
Fig. 2 - Typical de beta characteristic as a function

of collector current.

COLLECTOR-TO-EMITTER YOLTAGECYC~-V
Fig. 3 - Typical collector·to-emitter saturation
voltage as a function of collector current.
Fig. 1 - Maximum operating areas for all types
1Tc=9SoCI.
326
BU207, BU208, BU208A

ELECTRICAL CHARACTERISTIC8,At Case Temperature (TC) = 25'C unless otherwise specified
CHARAC- VOLTAGE CURRENT
eU207 eU208 eU20BA
TERISTIC Vdc Adc UNITS
VCE VeE IC Ie Min. Max. Min. Max. Min. Max.
ICES
1300 0 - 1 - - - -
1500 0 - - - 1 - 1 mA
IEeO 4 0 - 0.5 - 0.5 - 0.5
VCEO(sus) O.lb 0 600a - 700a - 700a - V
VEeO 0.1 5 - -'6 - 5 - Fig. 4 - Typical base-ta-emitter saturation voltage as
a function of collector current.
hFE 5 4.5b 2.25 - 2.25 - 2.5 -
veE (sat) 4.5 b 2 O.gc 1.5 O.gc 1.5 O.gc 1.5
V
VCE(sat) 4.5b 2 1.5c 5 1.5C 5 - 1
fT 5 0.1 1 (Typ.) 1 (Typ.) 1 (Typ.) MHz
Cob lad 160 (Typ.) 160 (Typ.) 160 (Typ.) pF
ts 4.5 1.8 10'(Typ.) 10 (Typ.) 10 (Typ.)

fl.S
tf 4.5 1.8 0.6 (Typ.) 0.6 (Typ.) 0.6 (Typ.)
R/lJC - 1.6 - 1.6 - 1.6 °CIW

a CAUTION: The sustaining voltage VCEOlsus) b Pulsed; pulse duration = 300 I'S, duty factor';;; 2%.
MUST NOT be measured on a curve tracer. c Typical value
V CEOlsus) should be measured by a pulse d V CB BASE (DRtYEI CURRENT (~I-A
method with the test conditions
IC = 100 rnA, L = 25 I'H, 18 = o. Fig. 5 - Guide for optimizing "drive" conditions at
3.5A in test circuit, Fig. 1. See also Guide
for Optimizing 'ON' and 'OFF' Base 10rive)
Current Conditions p.4.
Guide for Optimizing "ON" and "OFF"

Base (Drive) Current Conditions
Two very important conditions, both of excess carriers in the collector region while
which must be satisfied, provide the key to current in the base region is still flowing.
reliable and. efficient operation of a hori- The proper value for Le can easily be
zontal·deflection circuit. The first condition determined from Figure 6 and 7 after
is complete collector saturation. This is leI' ICM' and transistor de beta range at
accomplished by supplying sufficient "on" maximum collector, hFE' have been es-
base (drive) current, Ie I' to assure total tablished. Care should be taken to assure
saturation of the lowest-gain devices at end that the combination of a low leI and high
of scan current, ICM' and yet not over-driving Le does not cause the transistor to pull out
higher-gain devices. Component tolerances of saturation before the unit is completely
must also be taken into account while turned off causing dynamic saturation losses
selecting lel' or that a high Ie and a low Le does not
BASE (DRIVE) CURRENT (II.)-A UCI-10111
cause high dissipation due to collector cur- Fig. 6 - Guide for optimizing udrive" conditions at
The second condition and possibly the most
rent turn-off "tailing". 4.5A in test circuit, Fig. 1. See also uGuide
important is the removal of excessive carriers for Optimizing 'ON' and 'OFF' Base IDrive)
in the high-resistivity collector region at leM Figures 5 and 6 show that, once ICM has been Current Conditions~'
to eliminate dissipation from collector current established, a value for Le and IBI can be
fall-time "tailing". This is accomplished by selected, that will result in low dissipation
selecting the proper amount of series base and reliable operation for various ranges of
inductance, Le, to slow down the decay of hFE/IBt' Once leI has been selected,
reverse-base current, sometimes referred to figure 10 may be used as a guide to determine
as die Idt, inherent in low-impedance cir- the proper diB2/dt value over a range of
cuits. n;is enables complete recombination of collector current.
__________________________________________________________________ 327
POWERTRANSISTORS ______________--___________________________________________________________
BU207. BU208, BU208A

~ .•.
"ATE~-CHANOE Of ·OfF· .... I""'\IE'CURREtrirhlltz/dtl-A~

COI.L£CTOR C"",.ENT 11.1-·.
RATE-OF-CHANGE
teU-SOt ••
Fig. 9 - Typical "off" base and "on" base (drivel
Fig. 7 - Typical fall time and .torage tim. charac· Fig. 8 - Typical fall tim. and storage tim. charac· current as a function of collector current.
teristics as a function of uoff u bass teristics 88 iI.function of noff" base S.. also "Guide for Optimizing 'ON' and
(drivel current (I C = 3.SAI. (driv.1 current (Ie = 4.SAI. 'OFF' Base (Drive) Current Conditions~'
~8 ________________________________________________________
POWER TRANSISTORS
BUX16, BUX16A, BUX16B, BUX16C

High-Voltage, High-Power Silicon N-P-N n
FtNJtures:
• High vol.... ,niAfll: VCER(IU.I up to 400 V, RBE .; 50
Power Transistors VCEO(IUII up to 350 V
• High powo,dilllpotion ,nin.: ..,.-100W.tVCE = 135 V, TC' 25'C
For Switching and Linear Applications in • For switching applications wherti circuit values and operating
Industrial, and Commercial Equipment conditions require a transistor with • high second
_kdown ratln. (IS/b) Oiml'lIna begin. at 135 VI
The RCA BUX16-series devices are multiple epitaxial silicon The high breakdown-voltage r'tingl and exceptional second- _ Maximum __ «-operation CUI'V8I for de and pul .. operation
n-p-n power transistors employing a new overlay construction breakdown capabilities of these transistors make them especially
with several emitter sites. All devices employ the popular suita~. for use in series regulators. power amplifiers. inverters.
JEDEC 10-3 package; they differ in breakdown-voltage, deflection circuits, switching regulators, and high-voltage
leakage-current, and current-gain values. brid.. amplillen. TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Abwlure·Maximum V.'u ..: e
'~
BUX1. BUX1IA BUX1. . BUX1ec
COLLECTOR-TO-BASE VOLTAGE ...................... VelD 250 325 37. 425 V
COLLECTOR-TO-EMITTER VOLTAGE;
With .... reverH-blesed IVSE)· -1.5 V .......... , V CEV 25. 325 375 42& V
With external base-to..mltter resistance (A SE ) <.50 n VCER!suII 22. 300 3&. 400 V
With bale open ••••••••••••••••••••.•••••••••. , 25. 300 3&.
...... .. .....
VCEOIsuII 200 V
EMITTER-lO-BASe VOLTAGE . .. . . , , 6 6 6
CONTINUOUS COLLECTOR CURRENT ........ . . ..
VelD V
CONTINUOUS BASE CURRENT ......... . . . ......... , .. , .

'C 5 A
TRANSISTOR DISSIPATION: '. A
At CIIM temperatu .... upto 25:Cand Vee up to 135 V .... , .• 100 100 100 100 W JEDECTC»
::=::~=~::~:o~8~~.~~~,~~.~~~.',',
TEMPERATURE RANGE:
'.',',',", - - - - See Fig. 1
Derate linurly to 200°C
$1angt and operating Uunction) ...•......•....•....... , , - - - - -66 to 200 'c

ptN TEMPERATURE (Duringloldarinal:
Atdllblnce;;' 1/32 in. CO.B mm) from seating pllllnlll for 101mllx. Tp 230 'c
COLLECTOR·TO·EMITTER VOLTAGE (Va:'.'OV
J4.
2 I III
i. Ul.;#. \TC1- t2 :5"C
~.Z'''*
J r--
-
/_",'0
~
~ 20
1£ l'
~
~ 10
~
•
~
g
OJ 1.0 10
COlLECTOA' CURRENTtIcI-A
Fig. 2 - Typical dc beta VS. collector current

for all types.
COLLECTOR-TO-fMITTtR VOLTAGEtYcEI-IQ'V
CAIE TEMPEftATUR£ ITCl-2S- C
I ,.
I ~
€
~ 12
1'0 V'
~ ·v
10'
I..· l~
~

92CS-24285
2
0'"
. . . . ..
COLLECTOR CURRENT IIcl-A
ID
.. 10
Fig. 3 - Typical gain·bandwidth product VS.

collector current for all types.
--------______________________________________________________ 329
POWER TRANSISTORS
BUX16, BUX16A, BUX16B, .BUX16C

ELECTRICAL CHARACTERISTICS At ~ TllmPfllturo(Te) • we un"" o-.."".lfIfd
TEST CONDITIONI LIMITS
VOLTAGE CURRENT
CHARACTERISTIC SVMBOL IUlC'. IUlC'.A IUlC' •• IUlC'8C UNITS
....
Vole Adc
VCE VI.IC la Min. MIll. Mox. Min. MIX. Min. MIX.
.Collmo, Cutoff Cu"ent:

260
326
-1.6
-1.&
-
-
- -
-- --
&
-
-- - -- -- -- --
&
With but reverie-billed. Icev 37& -1.& - - - - - - - 2
426 -1.& - - - - - - - - - 2
With blu revenl-biased
TC -150'C Icev 260 -1.& - - - a - a - 3 - 3 mA
With bale open Iceo 17& - - 0 - & - 2 -_. - - -
Emitter Cutoff Curr.nt:
260 - - 0 - - - - 5 - 2
Vea = 6 V leso - - 0 - - 5 - & - 2 - 2 mA
Sult,lnlng Voltagel
With ba.. open Vceol,u.1 - - 0.2 0 200 - 260 - 300 - 360 - V
emitter ,esistance
IRsel';5011 VCeRI,u.1 - - 0.2 - 226 - 300 - 360 - 400 -
Emitter-to-Base Voltage Veso - - 0 0.02 8 - 8 - 8 - 8 - V
DC Forward-Current Transfer
10 - 0.4b - 15 130 15 130 16 130 15 130
Ratio
hFe 10
to
- ~
4.5b
- 15 - 15 - 12
5
- 12 -
5 5 5
Base-ta-Emitter Voltage VSE 10 - 2b - - 3 - 3 - 3 - 3 V
Collector·ta-Emitter - - 2b 0.25 - 2.5 - 2.5 - 2.5 - 2.5
Saturation Voltage VCEI",I - - 4.sb 1.125 - 5 - 5 - 6 - 5
V
Gain-Bandwidth PrOduct IT 10 - 0.2 - 5 - 5 - 5 - 5 - MHz

Emitter, Small·Signal,
Short·Circuit. Forward·
Current Transfer RatioC
Ihi. I 10 - p.2 - 5 - 5 - 5 - 5 -
latl MHz)
Common-Emitter, Small-
Signal, Short-Circuit,
Forward-Current Transfer
R.tlo 1111 kHz) hfo 10 - 4 - 20 - 20 - 20 - ·20 -
Output C1p,acitlnce
1111 MHzl:
VCS -10 V. Ie - 0 Cabo - - - - - 160 - 160 - 160 - 160 pF
Second·Brtlkdown Collector
Curr.ntd :
IWlth base 'o,ward·bl.lld)
Pul .. dur.tlon
Inon,_ItI .. ) - 1 •. ISib 135 - - - 0.7& - 0.7& - 0.75 - 0.75 - A
Socond·Brtokdown energy':
IWith boll ........bI.led)
L-1&o,.H. RaE - &011 ESib - -4 - 1.2 - 1.2 - 1.2 - 1.2 - mJ
Thlrmal R..IIt.... :
Junctlon-tooQlH R6JC - - - - - 1.75 - 1.76 - 1.75 -. 1.75 'CIW
• CAUTION: SulhllnlnllVOlw.... veEol .......nd VCEAllu.1 MUSTNQTbI mulUred on. CloWVt trlCll.
<
II Pul", pulM duration 310 III, duty ..etor • 2".
o MMlurtd., a frtquancv wha(t l"tel e
II eIIer_lng at apprcuclma"ly de par ocuva.
d ISIb I, defined a' tha cur,.n. at which IICOnd brtIkdown occur. at a ,peclfled collactor vol.... with tha aminar-blat
Junction forward bl.1Id for tramiltor opamlon In thl actlvt rtIIfon.
a ESlb II defined a' tha anafIY ., which IICOftd brtIkdown occur, under IIPHlflad r~ bill connaetlon,.
ESIb -lA, Ll2 wheI'. L I' • ..,IM load or ItlkIge Inductance, .nd II, tM peek col,",or CU".M,
330 _______________________________________________________________
POWER TRANSISTORS
.I 4
J'
!
10 " 6 'r02 2 " . 'IOl " "10"
80 100 120 I..a EXTERNAL BASE-TO-EMITTER RESISTANCE (RBEI-A
COLLECTCfI-TO-£MITTtR VOLTAGE: IVCEI-Y ta•• M,. BASE-YO-EMITTER VOLTAGE IYBEI-V
Fig. 4 - Typical output characteristics Fig. 5 - Tvpical transfer characteristics Fig. 6 - Sustaining voltage vs base-to-
for all types. for all types. emitter resistance for all types.
eASE SUPPU VOLTAGE(VB8)- -4 V CASE TEMPERATURE lTe '- 2!!-C :::: ; ..

INDUCTANCE ILl' 500 ~H INDUCTANCE IL I • 500 IIH E~~~H
CASETEMPERATURE{Tc):25"C
BASESEIUESRE:SISTANC£: IR 8,a I OA :~:~ :::: ::::
I,., .1 ..
':::::'k:""'''' .:!: I 11:!.t :": ~ ;
::':""1::::
,:,,'k
Tr'T,,'
I:,: '::T:l:': ~
:Y"X:: :1::,'- ...... ':"1;;""
I~'
,',' , ••• ". '.'.:: ', .. "" "". ~
:i': "'i''':'
HT"','P;;' "::: :: I ~
b'W~'''; "
·· . · . . . _-... ,·"'.,'11".'
-. -. .....
1.' BA5ESERIESRE5ISTAMCE(RBI_1I BASE SUPPLY VOLTAGE IV 88 1-V
IMDUCTANCI!(L) - ,"
Fig. 7 - Typical reverse-bias, second- Fig. 8 - Typical reverse-bias, second- Fig. 9 - Typical reverse-bias, second-
breakdown characteristic breakdown characteristic breakdown characteristic
PULSEWlOTHUO,..
REPETITION RATE.~PULSES'"
PULSE WIDTH'" 20 ... COLLECTOR SUPPLY VQ..T AGE IVccI-30 Y
REPETITION RATE - 500 PUL.SESIs CASE T£IIIPIERATUR£ ITCI- 2'- C
COLLECTOR SUPPL.Y VOlTAGE IVc;:CI.30
CAS£ TEMPERATURE ITCI-25-C.
~.
r
t 2
1.5 2.5 1.5 2 2.$ 3 15

COLLECTOR C~RENT (lei-A cou.ECTOR CurtRENT lIeI-A
Fig. 11 - Saturated switching times (turn-

Fig. 10 - Saturated switching time (storage) on and fall) vs. collector current
VS. collector current for all types_ for all types.
__________________________________________________________ ~1
POWER TRANSISTORS
BUX17,BUX17A, BUX17B, BUX17C

FlIBturtlll:
Silicon N-P-N Switching Transistors • Hiill_.. ntI....:
VCBD - 250 V (BUX17)
For Switching Appl~tions in Industrial and Commercial Equipment - 350 V (BUXI7A)
- 400 V (BUX17BI
'Ibe RCA·BUXI7. BUXI7A. BUXI7B. and BUX17C are The exceptional second·breakdown capabilitl.. and high - 450 V (BUX17C'
muttipla epitaxial silicon "-PO" power transistors utilizing a voluge-breakdown ratings make these transistors especially
multiplHmitter-slte structure. Multiple-epitaxial constnlction suitable for off-line inverters, switching regulators, mptor • HIIII dllIipotion rating: ..,. -150 W
maxlmiz.. the volt-ampere characteristic of the device and controls. and deflection-circuit applications. • Low _ration_po
provides fast switching speeds. Multipla-emitter-site design The high breakdown vottages, low saturation voltages, and .Maximum~iDncul'V8l
auurft..uniform current flow throughout the structure. which fast..witchlng capability of thasa ....Iea. make thom especially
produces a high ISIb and a large _ _ation area.
suitable for inverter circuits operating directly off the rectified
These ....ic:os UII tho popular JEDEC TOol package: they 115-V power line or in 8 bridge configuration operating from
differ mainly in voltage ratings and leakage-current limits. the rectified 220N line. TERMINAL DESIGNATIONS
MAXlIlllUM·RATINGS. AbooIut.-Maximum Vsluas:

COLLECTOR·TO-BASE VOLTAGE ••••.•.•.....•..••.•.•.•
COLLECTOA·TD-EMITTER SUSTAINING VOLTAGE:
With .... open ••••••.•••.••.•.•...••.• , •••• " • . • • . • . •
With rewne bielIVSEJ" 0 V (with balHmjtter shortedl. • . . • .
Nth exurMi baIHo-emi..... resistance IR BE) <SO n .......
VCBO
VCEO(suII
VCEx1lu11
VCER(sus)
1UX17
250
150
250
17.
BUX17A
360
250
3&a
27.
--
IUX17.
300
325
auX17C
4&0
360
4&0
376
V
V
V
V
ECQJ(FLA'imEJ
o
B
sta·m..
0
EMITTER·TQ..8ASE VOLTAGE ........................... VEBO 6 6 V
COLLECTOR CURRENT: JEDECTQ..3
ContlnuOUI •.•••••••.•••••••.•••.••.•..••.••.•.....• Ie la la la la A
,.k ••••.• ~............... ••• ••••••.••.••.•..•..••. ICM 30 30 30 30 A
CONnNUOUS BASE CURRENT •.•.••.• .... • . . . • . .. . • . . . . . 18 la 10 la 10 A
At _ Mn\pItrIIhIreI upto 2&:C .nd VCE up to 30 V ....... . 16a 150 150 160 W
At _ tern.......,.. up to 25 C .nd VeE above 30 V ....... .
At_~"'8bove26aCi....................... .
--- SH Fig. 1
Derate lin....ly to 20flc
TEMPERATURE RANGE, .
Slor.... C)peniting CJunctk)nl ••••••••••.•••••.••.••••.. - - - -66 to +200--- ·C
.
PIN TEMPERATURE IDurlnltoldlrlng):
At diItInce;> 1/32 In. fO.8 mm) from .... for 10s miX. • •••• ----230 ·C
•I
~ .
~ .
1,00 ~~
• ;;
I-
~
~.~
a
~ . k
i<
."-1 ~"
~ 1\1'" ~
. r.. 'l. .b." . '".l"-.....
I
NUIIIIER OF THERMAL C'f'CLES
Fig. 2 - Thermal·cycling rating chart for all types.
10
~, , . .. ,.
COLLECTOR CURRENT Itc) - "
COLLECTOR-TO-EMITTER VOLTAGE (VCE)'V
92CS-24635
Fig. 3 - Typical normalized dc beta characteristics
Fig. 1 - Maximum operating areas for all types. for all types.
332
POWIER TRANSISTORS

ELECTRICAL CHARACTERISTICS. At CBro T""'pMBWre (TCI- 2!t'CunlesrDtfIBrwi_lPIClfi«I
CHARACTERISTIC

SYMBOL
VOLTAGE
Vdo
Vce VBe
175
215
CURRENT
Ado
IC II
BUX17
Min.
-. -. -. -.
10
Min.
IUX17A
10
BUX171
MIn.
BUX17C
MIn.
UNITS
With external base-ta-emitter ICER

resistance (RBE) '" 50 n 325 10
375 1O
~50 -1.5 10
ICEV ~50 -1.5 10
mA
reverse-biased 400 -1.5
450 -1.5
250 -1':5 20
350 -1.5 20
At TC = 125°C
400 -1.5
450 1.5
10
.;;
Emitter Cutoff Current lEBO -6 2 mA
4" 20 20 15 15
DC Forward-Current Transfer Ratio hFE 8 7 7
lD"
Collector-ta-Emitter Sustaining
Voltage
With base open VCEO(sus) 0.2" 150D 250 b JOOb 3sob V

VCER(sus) 0.2" 175b 275b 32sb 37sb
resistance lAse) '" 50 0
Base-la-Emitter Voltage
eo 3.5 3.5 V
VBE
lD"
Base-ta-Emitter Saturation Voltage VBE(sat)

eo 1.5 V
10" 3
Collector-la-Emitter Saturation Voltage VCE"at)

eo 1.5
V
lD" 2
Magnitude of Common-Emitter.
Small-Signal. Short-Circuit,
Forward-Current Transfer Ratio:
f., 1 MHz Ihlel 10 2.5 8 2.5 8 8 2.5 8
Forward-bias Second Breakdown
Collector Current:
t = 1 5, nonrepetitive ISlb 25 6 6 A
With base reverse-biased, and
RBE' 50 n. L-40I'H ESlb -4 10 2 mJ
Saturated Switching Time (Vee'"

200 V. IBI • 182):
Turn-on (td + trl 1.5 2
tON 10 2 2 ,..
Storage 8 1.5 3.5 3.5
ts 10 2 3.5 3.5
Fan 8 1.5
tl 10 2
Thermal Resistance:
Junction-ta-Case RSJC 1.17 - 1.17 1.17 1.17 °CIW
.Pulsed; pulse duration'" 350 lAS. duty factor" 2%.

beAUTION: The sustaining voltages VCEO(sus) and VCER(sus)
MUST NOT be measured on a curve tracer.
---------------------------------------------------------~
POWER TRANSISTORS

TRANSISTOR SHOULD BE oPERATED WITti.", TH£
I
~
~
1
UMiTS OF THE OERATING CURVE
I
-'--
~
I\;
0.1
I ./
~
~
:;:: 0.01
•
/A - j . - ---
I F---"" V.I
'0001
.i 100
0,001 0,01 10
1
TIME OR PULSE DURATION-ills
BASE-TO- EMITTER VOLTAGE (\leE)- \I COLLECTOR-lO-EMITTER VOLTAGE IVCE1-v _ 92a;-I!/0479RI
Fig. 4 - Typical thermal response characteristics Fig. 5 - Typical transfer characteristics for Fig. 6 - Typical output characteristics for
for all types. all types. all types.
Ie/Ie.S(BUXIT,AI lelIa .5{SVXI7, AI

5.3II1U)(ITB,C) 5.:!{SUXllB,C)
5 to 15 20 20
COL.LECTOR CURRENT (Ie )-,1, "
COLLECTOR CURRENT {Ie I-A
COLLECTOR CURRENT {Ic1-A
Fig. 7 - Typical base-to-emitter saturation-voltage Fig. 8 - Typical collector-to-emitter sa turation- Fig. 9 - Typical rise-time characteristics for
characteristics for all types. voltage characteristics for all types. all types.
COLLECTOR CURRENT IIC I-A COLLECTOR CURRENT (Ie I-A

92C5-24$25
Fig. 11 -·Typical storage-time characteristics
Fig. 10 - Typical fall-time characteristic Fig. 12 - Typical inductive- and resistive-load for all types (with constant
for all types. fall-time characteristics for all types. forced gain).
~4 ___________________________________________________________
POWER TRANSISTORS
Bux18, BUX18A, BUX18B, BUX18C

High-Voltage, High-Current Silicon N-P-N
Features:
Power-Switching Transistors
For Off- Line Switching Applications • Hermetic steel package-JEDEC TO-3
• Epitaxial pi-nu construction
The RCA-BUX18, BUX18A, BUX18B, current-handling capability, ruggedness,
and BUX l8C are epitaxial silicon n-p-n and fast switching speed is required. The
'v
power-switching transistors with pi-nu C
devices are hermetically sealed in a steel
construction. They are intended for use in JEDEC TO·3 package, and differ from
off-line power supplies and for other appli- each other in collector voltage ratings.
cations in which a combination of high-
MAXIMUM RATINGs.. Absolute-Msx.imum Values;
BUX18 BUX1SA BUX1SB BUX18C BOTTOM VIEW It!;'"'''''
COL.LECTOR·TO·EMITTER SUSTAINING VOLTAGES:
With reverse bias, Vse '" -1.5 V . . . , •. VCEVlsul! 300 "0 600 ?50 JEDECTO·3
With external base-Io-emitter resiuence ~RBE .. 100!ll. , . VCEFllsus) 2'0 32' 37' '2' V
With base open
EMITTER·TO·BASE VOLTAGE.
VCEOlsud
VEBO ,
200
,
2"
,
32' 3"
•
V
V
CONTINUOUS COLLECTOR CURRENT Ie 8 8 A I,
PEAK COLLECTOR CURRENT.
~~'l
A
CONTINUOUS BASE CURAENT ..
leM
'8
'2 '2
2 "2 '2
2 A 'I'< 1~'.I~TI.,uu:'~'
PEAK BASE CURRENT
'8M
'T
A
c
: I I III
At case temperatures up to 25°C '20 120 '20 '20 W I WI~:)M!i::~Ur!--n~ ~
At case temperatures above 25°C - - - Derate'lnear,vaI0,eaW/oC _ _ _ -u I
ITel - r:'<~
i :F=
TEMPERATURE RANGE: ·c CASE TEMPERATURE 'OO·C ~
·c
~ '~t-
Storage and Operating (JunctIon I . . . -65 to +200
At distances~ 1/32 ill. (0.8 mm) from case for 10 s max. 235 ·c
I III
~o.,
w ,Fvclol~AL1- 1 2OO VtBUX,81
~'\
r--l-vcEO
~ :r--I- (MAX,) -27SV{BUX.BA)
1.1'\
, VCEO (MAX.) -325V{BUX.8Bl
0.0
f--
. ..
,I--vcT' 'i'i'>I·"'i'·"""1
.0
, . .. , n . ..
100
COLLECTOR-TO-EMITTER VOLTAGE {VCEI-V
1000
Fig. 2 - Maximum operating areas for all

types at 25°C and 100°C.
100
I
•I
\. ~4'~'\I"
I
. ~ \1\ '''""
l
~
f
~I\ 1'\""",~.
••• . .'~ 1\ 1\ '\~.,

01ii
. . .~ .. ~ . m
I~ If~ J\ 0
10
... ~ .
I.
~
'-jUM8ER OF THERMAL CYCL.ES
,
Fig. 3 - Thermal·cycling rating chart for all
types.
COLLECTO,R-TO-EMITTER VOLTAGE (VCE1-V

92CS-27752
Fig. 1 - Maximum operating areas for all types. ~ I
0.01 " ' 8 0.• " 6 8 I " 6 '.0

COLLECTOR CURRENT f1c1- A
Fig. 4 - Typical dc beta characteristic for all

types.
____________________________________________________________ 335
POWER TRANSISTORS
BUX18. BUX18A, BUX18B, BUX18C

ELECTRICAL CHARACTERISTIcs, At C- r _ _ (TeI- aoc _ 0_ _ _ lfiM/.
TEST CONDITIONI LIMITS

CHARACTERISTIC SYMBOL VDl.TAOE CURRENT IUX1. IUXI8A IUX1 . . IUX11C UNITS
VcIo Ada
Vee VIE IC II Min. MI•• Min. Mu. Min. Mu. Min. Mo••
With external base·to-emitter leER 200
resistance (RBE) = lOOn 215
325
400
With base·to~emitter junction 300 -1.5 0.5 -
reverse· biased
'CEV
450
800
-1.5
-1.5
0.5 - 0.5
mA
r:
150 -1.5 0.5
With base-ta-emitter junction 300 ·-1.5 10
reverse-biased, 450 -1.5 10
and TC = l00·C 800 -1.5 10
150 -1.5 10
Emitter Cutoff Current IEao -6 0 3 mA
Emitter Cutoff Voltage VEao 0.003 6 V
4' 10 10
DC Forwar(f·Current 5'
hFE
Transfer Ratio 6' 1 Fig. 5 - Typical collecto,.to-emitter satura-
I' 15 100 15 100 15 100 15 100
tion-voltage characteristics for all
Coliector·la·Emitter
types.
Sustaining Voltage:
With base open
VCEOI.us/ 0.2 200 - 21S b - 325" - 375- -
V
With external base-to·emitter
resistance (Ree) ;; 100 n VCERI.us/ 0.2 250 - 325" - 315' - 425- -
Forward·Biased Second·Break·
down Collector Current: 'Sib
38
200
3.16
0:,
-
-
3.16
0.1
-- 3.16
0.1
- 3.16
0.1
- A
t = 1 S, nonrepetitiv8
Base-Ia·Emitter
Saturation Voltage
6'
5'
1.2
1
2.5 - 2.5 V
VBEI...I
4' 0.8 2.5 2.5
Collector-la-Emitter 6' 1.2 1.5 -
Saturation Voltage VCEI,,'I 5' 1 1.5 V
4' 0.8 1.5 - 1.5
Reverse-Bias Second-Breakdown
Energy:
RSE"3kll. L'40~H
ESlb -1.5 180 - 180 - 180 180 - mJ
Saturated Switching Time

1181 "IB21:
Storage '. Vee'
200 V 0.8
~.
FaU Vee-
" 200 V 0.8 0.6 - '0.8 0.6 - 0.8 COLI.ICTCMI"TO-EMtTTIEIlIA1lMATIDN VOLTAGE [VCIE IIIU] - V
Thermal Resistance: nCI-11Oft
Junction-to-C.se ReJC - 1.48 - 1.40 - 1.48 - 1.46 ·CIW
Fig. 6 - Typical base-t(J-emitter saturlltion-
a Pulsed, pulse duration = 300 ",S, duty factor ";;;2%. voltBge characteristics for all types.
b CAUTION: Sustaining Voltages VCEO(sus) and VCER(sus), MUST NOT be measured on a curve tracer.
336 _____________________________________________________________
------------------------------------------------------------------------------POWERTRANSISTORS
BUX66,BUX66A, BUX66B, BUX66C, BUX67,BUX67A,BUX67B, BUX67C

High-Voltage Silicon N-P-N and P-N-P Transistors
Features:
The RCA-BUX66-series types are silicon p-n-p switches, switching regulators, converters, • Large safe-operating area
transistors; the RCA-BUX67-series types are and inverters. • Thermal-cycling rating
silicon n-p-n transistors. All of these devices The BUX66,BUX66A,BUX66B,and BUX66C • 100-percent tested to assure freedom from
feature high breakdown voltage and fast are p-n-p complements to the n-p-n types second breakdown in both forward- and
switching speeds. They are intended for a BUX67, BUX67A, BUX67B, and BUX67C. reverse-bias conditions when operated
wide variety of applications in acldc com- All are supplied in the JEDEC TO-66 within specified limits
mercial equipment_ hermetic package. • Economy types for acldc circuits
Typical applications include high-voltage
operational and linear amplifiers, high-voltage • Fast turn-on time at high collector current
BUX66. BUX66A. BUX66B. BUX66C. C
'~
BUX67 BUX67A BUX67B BUX67C
VCBO 200 300 350 400 V
VCEV(sus)
VBE = -1.5 V 200 300 350 400 V
VCER(sus)
RBE = lOOn 175 275 325 375 V JEDEC TO-66
VCEO(sus) _ 150 250 300 350 V
VEBO 6 6 6 6 V
IC· 2 2 2 2 A
ICM 5 5 5 5 A
IB _ A
PT
Up to 250 C 35 35 35 35 W
Above 25 0 C, Derate linearly. 0_2 0.2 0.2 0.2 W/oC
TJ, Tstg - -65 to 200 °c
TL At distance 1/16 in. (1.58 mm) from
seating plane for lOs max. 235 235 235 235 °c
• For p~n-p devices, voltage and current values are negative.
BUX66-series types.
COLL.ECTOR-TO-EMITTER VOLTAGE (VCElo-IOV
~
: COTTOTTrfmTLT(VCE"-'V J--t- CCJU.ECTOR-TQ-EIIIlTTER VOLTAGE: IVaI. 10 v
i 4.~CM=ETT~E"~PTE·=~ruT·ET(~~~'·T2.~.C~_,,, __r--t~H
~ l.oo ! "if--t---t--t+t--+---t-+++--+---t---t-t-I
CASE TEMf£RATUflE tt 'oI50-C
,.J.e
~""
~
~
.. TC·25·C
i
15
r ...
-!--.
\
~ "~-r-T-rH--T74~~~~--~-H
I "r--t--t-t-H"../~--t-t-f't--t--t-t-H
·, I s 2'~-+--f7f+t----t---r-~Pr-t--~-H
I·
~ 10
t\\
\ I r---r---~
~ <a.i€!i
"~Ilkt--
~l"·2.e
_•...,
,
! ::'I7'-t--t-t+t---t--t-t++-\\-tt---t-t-H
g
·,.
-001 -
0,1 -
COLL.ECTOR CUARENT t:1cl-A
I
, " 6 ,_
"
~
, ..
1111
.0
.. I .. ,
J02
COL.L.ECTOft CURRENT tIel-iliA
.,,~
10 -0.01 -0,1
. ..
COLLECTOR CURMENT IIC 1- A
-I
...-10
Fig. 3 - Typical de beta characteristics for Fig. 4 - Typical gain-bandwidth product for
Fig_ 2 - Typical dc beta characteristics for
BUX61-series types_ BUX66-series types_
BUX66-series types.
______________________________________________________________ 337
POWERTRANSISTORS ______________________ ~ __________________________________________________
BUX66, BUX66A,BUX66~BUX66C,BUX67, BUX61~ BUX67~BUX67C

ELECTRICAL CHARACTERISTICS, At Cue Temptl/'tltUl'l (TC) - 2SOC
Un/IllS Oth"w/. SptIclfled
TEST CONDITIONst , LIMITS

VOLTAGE CURRENT, BUXU· BUXUA· BUXUB· BUX66C·
CHARACTERISTIC BUX67 BUX67A BUX67C UNITS
V d_ Ad_ BUX67B
SYMBOL IC IB Min. Max. Min. Max. Min. Max. Min. Max.
VCE VBE
ICEO 150 0 - 10 - 10 - -S - -S
200 -1.S - 8 - -
ICEX 300 -1.5 - - - 8 - - - -
350 -1.5 - - - - - -8 - -
400 -1.5 - - - - - - - -B mA
200 -1.5 10 - -
300 -,.S - - - 10
TC = lOOoC 350 -1.5 - 10 - - - -10 - -
400 -1.5 - - - 10 - - - -10
lEBO -6 a - l' - 1 - 1 - 1 mA
I'FE 5 la 10 150 10 150 10 150 10 ISO
VCEOISlIS) 0.2a a ISO- - 250- - 30O- - -3S0- -
VeERISlIS) v
RBE =500 0.2 17S" - 275- - -325" - -375" -
VBElsali 1a 0.15 - 1.5 - 1.5 - -1.S - -1.S V
VCEls.lI I" 0.15 - 2.5 - 2.S - -2,5 - -2,S V
Cobo
VCB= 10V
f= 1 MHz
BUX67 Types 0 - 120 - 120 - 220 - 220
pF
BUX66 Types 0 - 200 - 200 - 220 - 220
ISlb
I = 1 s, nonrep. 40 875 - 87S - -B75 - -B75 - mA
ES/b
. L = lOO"H
R8E = 20 Sl -4 50 - 200 - 200 - SO - J.lJ
Ihr.1
f = 5 MHz
8UX67 Types 10 0.2 2 - 2 - 2 - 2 -
BUX66 Types -10 -0,2 4 - 4 - 4 - 4 -
Ir
VCC=200V
BUX67 Types I O,l b - 3 - 3 - 3 - 3
Is
BUX66 Types -1 -0,10b - 0,6 - 0,6 - 0,6 - 0,6
VCC=200V
BUX67 Types I O.lb - 4 - 4 - 4 - 4 J.lS
BUX66 Types -I -O,IOb - 2,5 - 2,5 - 2,5 - 2.5
If
VCC= 200 V
BUX67 Types 1 O.lb - 3 - 3 - 3 - 3
BUXU Types -1 -0. lob - 0,6 - 0.6 - 0,6 - 0,6
RIIJC 5 - 5 - 5 - 5 oCIW
a Pulsed: Pulse duration· 300ps; duty factor < 2%. b ISl = 182 +For p-n·p devices, voltage and current values are negative.
- Suslaining yollages. VCEOlsusl and VCERlsusl MUST NOT be measured on a CUrye Iracer.,
338
BUX66, BUX66A, BUX66B, BUX66C, BUX67,BUX67A, BUX67B,BUX67C
i
.
-10: CASE TEMPERATURE (Tcl-100·C
2 Ie 'MAX.) CONTINUOUS ~+-~++f+-t---++-H

~ _I LS~
~ : ,l'Ip+"
z
Ii!i-~I ~~~+~-+~
l'<~
§ : ~
j 41--~:YCEO IMAX.)- -1M) II (BUX")
18 21-- YCED IMAX.) --250 Y (aUXeSA)
1 -0.01 t-- VcEoIMAX,)--300 Y IBUX8681

ITt..
:l== YCEO (MAX.)- -350 Y (au. He)
_I 2 .. 68_ 10 It .. • __ 100 .. '!IOOO
ICOLLECTQR-TO-EMITTER VOLTAGE iVcEI- ~ICS-2'001'
Fig. 7 - Maximum operating areas ~r

0::
o BUX66-series at T c= 100 C
t-
U
'"
~
~
o
<.)
Ie (MAX.) CONTINUOUS
'" 6 810 4 6 8100 r5(2)~4 6 ':000

COLLECTOR-lO-EMITTER VOLTAGE (VeEI-V "" ""
92CS-260'1'9
92CS-26006
Fig. 8 ~-Maximum operating areas ~or
Fig. 5 - Maximum operating areas for BUX66·series types. BUX67-series at T C= 100 C.
~
OJ
It:
!§ Fig. 9 - Typical transfer characteristics for
o
II: 8UX66-series types.
~j
o
o
I
92CS-26018
Fig_ 10 - Typical output characteristics for
Fig. 6 - Maximum operating areas for BUX67-series types at T c= 25° C.
BUX67-series types.
____________________________________________________ 3~
POWER TRANSISTORS __________________________________________________________________________
BUX66,BUX66A, BUX66B, BUX66C, BUX67, BUX67A, BUX67B, BUX67C

COLI.!CTOR-TO-GI1"ID YOLTAIE 1Vr:r;:1-1O V
l 40
II. ~lf-
I~
-.-JIl-
I
11::'1 II II
it
E
II
il I
"--- --
I 20
/
I /
! Ii /
" / /
0 V
, , OJ
IASE-TO-EMITTER VOLTAGE (\I1l1-\1
LO ,~
COLLE;CTQR CURRENT IXc'-A COLLECTOR CURRENT (lei-A
Fig. 11 - Typical saturation-voltage characteristic Fig. 12 - Typical saturation-voltage charac- Fig. 13 - Typical input characteristics for
for BUX67-series types. teristic for BUX66-series types. BUX67-series types.
CASE n.MPERItTUR£ 1TC'"a5"C CASE la.£RA1'UfI£ ITc'. 2'-C CA.SE TEMPERATURE ITCI • e·c
BASE-TQ-EM'TT[R VOLTAGE {YB£'--4V 8A$E-TO-[MITTER VOLTAGE (VIlE'--4V EXTERNAL BASE-TO-EMITTER
EXTERNAL BASE-TO-EMITTER RtsISTAlCEIRB[I-ZOG. INDUCTANCf (\.). 100 ,.,H
IND~:::~~:~: A
.
.. ! i
, 8
~
100 200
INOUCTANCE iLI-l'H
!lOO 10 20 30
EXTERNAL BAS(-lQ-[MITTER RESISTANCE U~BEI-D
40 -, -6 -04
BASE-TQ-EMITTER VOLTAGE CVBE I-\1
-2
9259·3117
Fig. 14 - Reverse-bias second·breakdown Fig. 15 - Reverse-bias second-breakdown Fig. 16 - Reverse-bias second-breakdown

characteristics for BUX67-series characteristics for BUX67-series characteristics for BUX67-series
types. types. types.
COLLECTOR CURRENT (lei-A o 0.2 0.04 0.6 O.B 1.0 1.2 1.04 1.6 1.8 2.0
CO\.LECTQR Cl..RMHT tIel-A 92CS-Z6010 COLLECTOR CURRENT (Icl-A.
Fig. 17 - Typical turn-on time and fall-time

characteristics for BUX66-series Fig. 18 - Typical storage-time characteristic for Fig. 19 - Typical rise time vs. collector current
types. BUX66-series types. for BUX67-series types.
.... ...... , ....... . PULSE DURATION- 20,.. +
................ ;, ~~P~IT!~I~NB ~~~~~IOOO PULSES/, ±j:l±tffimE~~~.jti

~ ~~f!"
."
t CASE TEMPfRATURE (TC l a2 5-C :
+ !Jr:i
'" ~-t+
..
'"
~ a
~ i'E~!," .8 ~
~ 0.6 2.6 .:
~:~
If$~2.04~
!
+~ .~~t 2.2 ~
"AAf:l:.4:!,
50 .00 150 200 2SO 300 350
o 0.2 0.4 0.6 O.B 1.0 1.2 1.4 1.6 1.8 2.0 COLLECTOR SUPPLY \/OLTA.GE IVCCI-\/
COLLECTOR CURRENT 'Iel-A !l255-312111'
Fig_ 21 - Typical rise time, fall time, and
Fig_ 20 - Typical storage time vs_ collector storage time vs. collector supply Fig. 22 - Typical fall time vs. collector current
current for BUX67-series types. voltage for BUX67-series types. for BUX67-series types.
340
POWER TRANSISTORS
MJ15001, MJ15002
Complementary N-P-N/P-N-P Silicon Power Transistors
Features:
Rugged Devices, Broadly ApplicablE:! For Industrial and Commercial Use
The RCA-MJI5001 and MJ15002 are bal- MJ15001 n-p-n transistor complements the
lasted epitaxial-base silicon transistors fea- MJ15002 p-n-p transistor. These types are
turing high gain at high current. The supplied in the JEDEC TO-204MA packages. .fT = 2MHz
MAXIMUM RATINGS, Absolute-Maximum Values: Applications:

MJ15001 MJ15002
VCBO '
140 -140 V
VCEO ' 140 -140 V • High-fidelity amplifiers
V ESO ' 5 -5 V
IC' 15 -15 A
IS' 5 -5 A • Solenoid drivers
IE' 20 -20 A
PT
At T C;;. 25°. 200 -200 w
At TC> 25°c 1.14 w/C c
'~
T stg • T J . . . -65 to 200 °c
TL
At distance ~ 1/32 in. (0.8 mm) from seating plane
for 10 s max. . . . • . . . • . . . 230 °c
JEDEC TO-204MA
ELECTRICAL CHARACTERISTICS, at Case Temperature

ITCI = 25°C Unless Otherwise Specified

VOLTAGE !cURRENT
CHARACTERISTICS MJ15001 MJ15002 UNITS
Vdc Adc
ICEX 140 1.5 - 1 - -1
mA
TC = 150°C 140 1.5 - 2 - -2 IS 50 1'5 100 125
CASE TEMPERATUM: ITe1 _·c
150 115 200
ICEO 140 0 - 2.5 - -2.5 mA

Fig. 1 - Current derating curve for both types.
lEBO 5 0 - 1 - -1 mA
VCEO(SUs)a 0.2 0 140 - -140 - V
hFEa 2 4 25 150 25 150 ~ .
~-: COLLECTOR- TO-EMITTER
i r-~
0
VOLTAGE (VCEJ-2 v r-
..
VBE 2 4 - 2 - -,2 V 2
.....
c 100
VCElsat) 4 0.4 - 1 - -1 V ~
:: "~1'\),,,
=0.5 MHz ~ 4 I-~~'O

fT f 10 0_5 2 - 2 - MHz
Ii •
, 0
ISlb tp - Is
40 5 - -5 - A ~ '0.
100 P.5 - -0_5 -
Cob
VCB = 10V - 1000 - 1000 pF
I : ... ...
III , ...
f = 1 MHz • •
0.01 0.1 I 10
• II
100
COLLECTOR CURREN' Ctc l-A .ZCS.lO.4.
•
ROJC - 0_875 - 0.875 °C/W Fig. 2 - Typical dc beta characteristics as a function
of collector current for MJ75007.
• CAUTION: Sustaining voltage. VCEO(sus). MUST NOT be measured on a curve tracer.
___________________________________________________________________ 341
POWER TRANSISTORS
MJ15001, MJ15002
..:-'000,.,
COLLECTOR-TO-EMITTt:R VOL.TAGE (V(:E'--2V --r
.
ii
~
J. ilIl--.:J
1 II
Eloo, DE1TEMPERATURE
c
-11,··-
~
I
!
I:
.
~-t-
ITcl- 25 -C
,
~ I
II!
a '0,
I ·••
c ~.
:::,
_0.01 2 .. 6}'o.1 2 .. 68'1 2 .. 15 '-I
COLLECTOR CURRENT I1.CI-A
2 .
92C5-:SOO77
• !, 00
Fig. 4 - Typical de beta characteristics as a function

of collector cur;ent for MJI5002.
COLLECTOR-TO-EMITTER VOLTAGEIVCE)-V 9'CM-.048!
Fig. 3 - Maximum operating area for both types .
• ASE~TO-EMITTER VOLTAGE (VaE'-V' 92C9-30148

BASE':'TO-EMITTEA VOLTAGE (VaEJ-Y 92C5-30149
Fig. 5 - Typical input characteristics for MJ15001. Fig. 6 - Typical input characteristics for MJ15002. Fig. 7 - Typical transfer characteristics for MJI500 1.
BASE-TO-EMITTER VOLTAGE'YBE'-V COUECTOA CUfIR[Nr (Ic)-A 92CS-:SOO78
Fig. 9 - Typical saturation voltage chsracteristics

Fig. 10 - Tvpical saturation voltage characteristics
Fig. 8 - Typical transfer characteristics for MJ75002. for MJ75007.
for MJI5002.
~2 _______________________________________________________________
POWER TRANSISTORS
MJ15003, RCA3773, RCA8638C,RCA8638D, RCA8638E

Features:
Rugged Devices, Broadly Applicable For Industrial and Commercial Use
The RCA3773, MJ15003, RCA8638C, RCA· They differ in voltage ratings and in the
86380, and RCA8638E are ballasted epi· currents at which the parameters are con·
.fT = 2MHz
taxial·base silicon n·p·n transistors featuring trolled. All are supplied in the steel JEOEC
high gain at high current. They may be used TO·204MA packages.
as complements to the p·n·p types 2N6609,
MJ15004, RCA9116C, RCA91160, and RCA· Applications:
9116E, respectively.
• High-fidelity ampliffers
MAXIMUM RA TI NGS, Absolute·Maximum Values: • Power-switching circuits
RCA3773 MJ15003 RCA8638C RCA8638D RCA8638E
V CBO ' 160 140 140 120 100 V
VCEX(sus)
V BE = -1.5 v; RBE =100ll 160 V
VCER(sus)
RBE = 100 II 150 150 150 130 110 V C
'~
VCEO(sus) 140 140 140 120 100 V
V Eao 5 v
IC 20 A
la . 5 A
PT
At T C ":25°C 150 250 200 200 200 W
At T C >2SoC Derate linearly 0.857 1.43 1.14 W/oC fiCS-!»"
T stg ' T J . -65 to 200 °c

TL JEDEC TO-204MA
At distance ;;;>1/32 in. (0.8 mm) from
seating plane for 105 max .. 230 °c
H 50 75 100 125 1!tO 115 200

CASE T[MPERATlME tTcl-·C
Fig. 2 - Current derating curve for all types.
~
~ .
.lOW, COL.L.ECTOR - TO-EMITTER VOL.TAGE (VeEI- 2 v f -
4
~~.~~-
2
i 2
......
E 100
~ ,
:p..~lA,t,,"1~~
~
z
~ · C"",1c.'·?''!I·c.
~ •
I 10
,,
~ ·•
COLLECTOR-lO-EMITTER VOLTAGEIV C E'- v
Fig. 1 - Maximum operating Breas for all types.
92CM-30145 l!1
0.01
2 ... ... • .. ...
0.1
2
I
4
10
2
100
COLLECTOR CURRENT (Xc I-A 92CS-30148
Fig. 3 - Tvpical de beta characteristics as a function

of collector current for all types.
_______________________________________________________________ ~3
POWERTRANSISTORS ________________________________________________________ ~ _________________
MJ15003, RCA3773, RCA8638C, RCA8638D, RCA8638E

ELECTRICAL CHARACTERISTICS, at Case Temperature (TcJ = 25"C
Unless Otherwise Specified (Cont'd)
TEST CONDITIONS
LIMITS
VOLTAGE CUR-
CHARAC- RENT
Vdc RCA8638C RCA8638D RCA8638E UNITS
TERISTIC Adc
VCE VBE 'C Min. Max. Min. Max. Min. Max.
140a - 1 - - - -
'CBO 120a - - - 1 - -
100a - - - - - 1
140. 1.5 - 1 - - - -
'CEX 120 1.5 - - - 1 - -
ICEX 140 1.5 - 5 - - - -
TC=150°C 120 1.5 - - - 5 - - rnA
ICEO 70 - 1 - - - -
IB=O 60 - - - 1 - -
lEBO 5 - 1 - 1 - 1
hFE 2 5c 25 150 25 150 - -
2 7.5e - - - - 10 100
2 10C 10 - 10 - - -
VCERlsus)b
0.2 150 - 130 - 110 -
RBE';; lOOn
VCEOlsus)b 0.2 140 - 120 - 100 -
VEBO 0 5 - 5 - 5 - V
IE = 1 mA
VBE 2 7.5C - - - - - 3
2 5C - 2 -' 2 - -
VCElsat)
IB = 0.75A 7.5c - - - - - 1.5
= 0.5A 5c - 1 - 1 - -
ISlb
tp = 1 s 35 5.71 - 5.71 - - -
A
nomep. 25 - - - - 8 -
Ihle l
1= 0.5 MHz
10 0.5 4 - 4 - '4 -
IT 2 - 2 - 2 - MHz
Cob loa - 500 - 500 - pF

500
1= 0.1 MHz
ROJC 10 10 - 0.875 - 0.875 - 0.875 °C/W

• v CB b CAUTION, Sustaining voltages VCEX(susl. VCER(sus), and • Pulsed; pulse duration = 300"••
VCEOlsusl MUST NOT be measured on a curve tracer. duty factor = 1.8%.
~4 _________________________________________________________________________
MJ15003, RCA3773, RCA8638C, RCA8638D, RCA8638E

ELECTRICAL CHARACTERISTICS, at Case Temperature (TCl = 25°C Unless Otherwise
Specified
VOLTAGE CUR·
CHARAC· UNITS
Vdc RENT
TERISTIC RCA3773 MJ15003
Adc
VCE VBE Ie Min. Max. Min. Max.
ICBO 160a - 4 - -
1403 - 2 - 1
'CEX 140 -1.5 - 1 - 0.1 COLLECTOR CURRENT ILcl-A
'CEX . f40 -1.5 - 5 - 2 Fig. 4 - Typical saturation voltage characteristics

TC = 150°C for all types.
mA
ICEO 140 - - - 0.25
IB= 0
120 - 1 - -
lEBO
7 - 1 - -
5 - - - 0.1
hFE 4 BC 15 60 - -
4 16 c 5 - - -
2 5c - - 25 15 9
2 10c - - 10 -
VCEX(susl b -1.5 0.2 160 - - -
RBE= lOOn BASE"rO-EMITTER VOLTAGE (VSEI-V

92CS~30146
VCER(susl b - -
0.2 150 150
RBE';; loon Fig. 5 - Typical input characteristics for all types.
VCEO(susl b 0) 140 - 140 -
VEBO 0 7 - 5d -
IE= 1 mA
V
4 BC - 2.2 - -
VBE
2 5c - - - 2
VCE(satl
'B = 3.2A 16 c - 4 - -
= O.SA BC - 1.4 - -
= 0.5A 5C - - - 1
100 1.5 - 1 -
'Sib
tp = 1 s 50 - - 5 - A
1.8 2.2 2.6
nonrep. 845£·TO· EMITTER VOLTAGE (VBEl-V
Ihfe l
Fig. 6 - Typical transfer characteristics for all types.
f=0.5MHz 10 0.5 4 - 4 -
fT 2 - 2 - MHz
hfe 4 1 40 - - -
f = 1 kHz
Cob 103 - 500 - 500 pF

f=O.l MHz
ROJC 10 10 - 1.17 - 0.7 °C/W
b CAUTION: Sustaining voltages VCExlsus), VeER/sus), and C Pulsed; pulse durallon ;: 300 lAS,
VCEOlsus) MUST NOT be measured on a curve tracer. duty factor'" 1.B%.
d Measured at IE = -0.1 mAo
Fig. 7 - Typical saturated·swirching times for

all types.
___________________________________________________________________ ~5
~ERTRANSISTORS ___________________________________________________________________________
RCA1A01-RCA1A11. RCA1A1S-RCA1A19
Silicon Transistors for Audio-Frequency TERMINAL DESIGNATIONS
Linear-Amplifier Applications
"RCA1A-5eries" n-p-" and p·n-p silicon transistors are es-
pecially characterized for audio-amplifier applications. Th"y
are particularly useful as input devices, VBE mul~ipliers fo'r
biasing, current sources,load·line·limiting (protection) circuits,
predrivers. and in some instances as complementary drivers.
RCA1AOl
RCA1A03
RCA1A06
N·P·N TYPES
RCA1All
RCA1A15
RCA1A17
,f3"~.,, 92CS-27!512
Other applications for these devices include audio power RCA1A07 RCA1A18
amplifiers, linear modulators, servo amplifiers. and opera· RCA1A09
JEDEC TO·39
tional ampl ifiers. The units are suppl jed in .the JED EC TO·39
P·N·P TYPES
package.
RCA1A02 RCA1Al0
RCA1A04 RCA1A16
RCA1A05 RCA1A19
RCAIAOB
MAXIMUM RATINGS.Ab80Iu,.M....imum V.JUft: RCA1AD1 RCA1A02 RCA1A03 RCA1AD4 RCA1A06.RCA1A06 RCA1A07 RCA1A08
COLLECTOR-TO-aASE VOLTAGE ....•..• VeBD 95 -95 -7. 75 50 -50 V
With base open .....••..•..•.....•..• VCEO 70 ...0 40 -40 V
With external ba9ll-to-emltter resin·
ance (RBEI '" 100n ............... VeER 95 -95 -75 75 50· ..... V
EMITTER-To-aASE VOLTAGE ...••••.... VEBa -4 -, -4 -. V

COLLECTOR CURRENT................ IC -I -2 -I -I A
BASE CURRENT....................... la 0.5 -0.5 -I -0.5 0,5 0,06 -0.05 A
At case temperatures up to 26°C ....... . 10 10 w
At cale temperature. above 26o C ..•..•.• See Fig. 1
TEMPERATURE RANGE:
Storage & Operating (Junction) ., •..... -66 to +200
At dlstarw:es ~ 1/32 in. 10.8 mm)
from case for to I. max. 230
·R BE .. 300n
MAXIMUM RATINGS, Ab60lute..waximum Vatu,,: RCA1AOI RCA1Al0 RCA1A11 RCA1A1S RCA1At6 RCAtA17 RCA1AtS RCAtA19
With base open .... ,., ......... , ....• VCEO 175 -175 17. 100 -100 90 10 -10 V
EMITTER-TO-BASE VOLTAGE ...•....... V EBO 6 -6 6 -s -, V
COLLECTOR CURRENT ....... , •. , IC -I -I -I A
BASE CURRENT ......... , .. ,.... IS a.• -0.5 0.5 a,. -0.1 O,S O,S -0.5 A
At case temperatures up to 25°C .. , 10 10 I. 10 10 W
At case tamperatures above 25°C .•.. , ... Sea Fig. 1
TEMPERATURE RANGE:
Storage & Operati"g (Junction) ••....... -85 10 +200 - DC
At distancel d:. 1/32 in. (0.8 mml
from case for 10. max. . .......... . 230 DC
Type RCA1AOl
Package: JEDEC TO·39 Type RCA1A02
Construction: Silicon n-p-n, planar Package: JEDEC TO·39
Construction: Silicon p·n·p, epitaxial planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI =
2s:' C Unless Otherwise Specified ELECTRICAL CHARACTERISTICS,At Case Temperature (Tel =
LIMITS 2~ C Unless Otherwise Specified
CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX.
CHARACTERISTIC LIMITS
TEST CONDITIONS UNITS
MIN. MAX.
ICEO VCE=60V.IB=0 - I I'A
ICEO VeE = -40 V, IB = 0 - -I I'A

lEBO VEB=4V,le=0 - I mA
r--- VEB = -4V,IC =0 - -I mA
lEBO
VCEO IC= loomA 70 - V
IT VCE=4V.IC=SOmA 120 MHz VCEO le=-O.IA -so - V
hFE IC=IOmA,VCE=4V 40 200 fT VCE = -'lV.lc=-SOmA 60 MHz
VeElsa') Ie lSOmA,IB= ISmA - 1.4 V- hFE IC=-O,I mA, VCE= -IOV 30 200
VBE IC· I OmA.VCE=4V - I V VBE IC --0,1 mAo VCE - -IOV -U.H V
For characteristics curves and test conditions, refer to published For characteristics curves and test conditions, refer to published
data for prototype 2N2102 . data for prototype 2N4036
346
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS
RCA1A01-RCA1A11, RCA1A15-RCA1A19
Type RCA lA03 Type RCA1A04
Package: JEDEC TD-39 Package: JEDEC TO·39
Construction: Silicon n-p-n, planar Construction: Silicon p-n-p, epitaxial-planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) <= ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) :::
25'C Unless Otherwise Specified 2~C Unless Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDITIONS UIllITS
MIN_ MAX_ MIN. MAX.
ICER VCE" 85 V. RSE" 1000 - 10 ~A ICER VCE" -85 V. RBE" lOOn - -10 ~A
lEBO VEB " 4 V. IC " 0 - 0.1 mA lEBO VEe" 4 V, IC "0 - -0.1 mA
VCER IC" 0.1 A. RBE" 1O0ll 95 - V VCER IC" -0.1 A, RBE" 1000 -95 - V
IT IC - 0.1 A. VCE 4V 50 MHz Ir IC- 0.1 A,VCE- 4V 50 MHz
hFE IC - 300 mAo VCE - 4 V 70 300 hFE le- 300mA, VCE- 4V 70 300
VCE("') Ie = 300 rnA, Is - 30 mA 0.8 V VCElsa') IC 300mA, IB- 30mA 0.8 V
VBE IC - 300 mAo VCE - 4 V 1.4 V VBE IC 300mA, VCE 4V 1.4 V
ISlb VCE " 50 V •• " 0.4 , 0.2 - A ISlb VCE" -35 V,'" 0,4
._- ..
5 -0.285 - A
. -
For characteristics curves and test conditions, refer to pubhshed For charactenstlcs curves and test conditions, refer to published
data for prototype 2N 5320 data for prototype 2N5322
Type RCA lA05

Package: JEDEC TO·39 Type RCA 1A06
Constructio:1: Silicon p-n-p epitaxial planar Package: JEDEC TO-39
Construction: Silicon n-p-n, planar
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCl =
25 v C Unless Otherwise Specified ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel =
25° C Unfess Otherwise Specified
LIMITS
CHARACTERISTIC TEST CONOITIOIllS UNITS LIMITS
MIN. MAX. CHARACTERISTIC TEST CONOITIOIllS UIllITS
MIN. MAX.
ICER VCE" -65 V. RBE" 1000 - -10 ~A

-
.. ICER VCE " 65V, R8 E" 1000 10 ~A
lEBO VEB"-4V,IC"0 - -0.1 mA

lEBO VEB" 4V, IC" 0 - 0.1 mA
VCER IC" -0.1 A, RBE" 10011 -75 - V

VCER IC" 100 mA, RBE" 1000 75 - V
IT IC" -50 mA, VCE 4V 60 MHz
IT Ic - 50 mA, VCE" 4 V 120 MHz
hFE IC --150mA, VeE "-4V 50 250
hFE IC - 150mA, VCE - 4V 50 250
VCElsa.) IC':":"150mA, IS --15mA - -O.B V
VCE(sa.) IC - 150 mA, IB - 15 mA O.B V
VBE Ie" -150mA, VCE - -4 V - -1.4 V
VBE IC - 150 mA, VCE - 4V 1.4 V
--
ISlb VCE"-65V,."0.4. -0.1 - A ISlb
....
VCE" 65V,'" 0.4, 0.077 - A
For charactenstlcs curves and test conditions, refer to published For characteristics curves and test conditions, refer to published
data for prototype 2N4036 data for prototype 2N2102
Type RCA1A08
Package: JEDEC TO·39
Type RCA1A07 Construction: Silicon p·n-p, epitaxial planar
Construction: Silicon n-p-n, planar ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI =
2~ C Unless Otherwise Specified
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = -,----
LIMITS
25° C Unless Otherwise Specified CHARACTERISTIC TEST COIllDITIONS UNITS
MIIII. MAx'
CHARACTERISTIC LIMITS
TEST COIllDITIONS UNITS
MIN. MAx'
ICER VCE "-40 V, RBE " 3300 - -10 ~A
ICED VCE" 40V - 10 ~A lEBO VEe "-5V - -0.1 mA
lEBO VEB "3 V, IC" 0 - 0.1 mA V eEO Ie" -100mA, IB" 0 -40 - V
VCEO IC"100mA 40 - V VCER IC" -100mA, RBE " 3300 -50 - V
IT VCE" -10V, IC" ~OmA 60 - MHz

VCER IC" 100mA, RBE" lOll 50 - V IC" ~OmA, VCE --1.5V 70 250
hFE
IT VCE -IOV, Ie - 50mA 120 - MHz VCE(sa.) IC - -100mA, IB" -5mA - -1.4 V
hFE IC 3mA, VCE 10V 50 250 100mA,I B
VBE lsa.) IC 5mA 1.4 V
VCE(sa.) Ic-20mA,IB-lmA 1 V
VBE("') le- 2OmA,IB-lmA - 1.3 V ISlb VCE" -35 V,'" 0.05. --{).12 - A
,
For characterIStiCS curves and test condItIons, refer to published
For characteristics curves and test conditions, refer to published
data for prototype 2N 21 02 data for prototype 2N4036
347
Type RCA 1A09 Type RCA1A10
Package: JEDEC TO-39 Package: JEDEC TO-39
Construction: Silicon n·p·n, epitaxial Construction: Silicon p-n-p
ELECTRICAL CHARACTERISTICS. At Case Temperature ITcJ - ELECTRICAL CHARACTERISTICS. At Case Temperature ITC) =
25i'C Unless Otherwise Specified 2SOC Unless Otherwise Specified
LIMITS
CHARACTERISTIC TEST CONO IlIONS UNITS LIMITS
MIN. MAX. CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX.
ICEO VCE = 90 V. IS = a - 10 pA
ICED VCE = -120 V,IS = a -10
IESO VES=6V.IC=0 - 100 pA

IESO VES=-6V.IC=O -100
VCEO IC = 10 rnA. Is = a 175 - V

VCEO IC=-10mA.IB=0 -175 V
IT IC = lOrnA. VCE = 10V 15 - MHz
'T IC= -lOrnA. VCE=-10 V 15 MHz
hFE IC = 10 rnA. VCE = 10 V 20 100

hFE IC = -10 rnA, VCE = -10 V 40 250
VCE(satl IC=50mA,IB=4mA - 0.5 V

VCE! ..t) Ie = -10 rnA, Is = -1 rnA -2 V
VSE IC = 10 rnA. VCE = 10 V - 0.9 V

IC = -10 rnA. VCE = -10 V --O,S V
VSE
ISlb VeE" 150V,t" 1 S 0.065 - A

ISIb VCE=-l50V,t=ls --0.04 A
For characteristiCS ,:urves and test conditIons, refer to published dala for prototype 2N3439 For characteTlstlcs curves and test condItions, refer to publIshed data for prototype 2N541&
Type RCA1A11 Type RCA1A15

Package: JEDEC TO-39 Package: JEDEC TO·39
Construction: Silicon n-p-n, epitaxial Construction: Silicon "-p-r., epitaxial
ELECTRICAL CHARACTERISTICS. At Case Temperature ITcJ = ELECTRICAL CHARACTERISTICS. At Case Temperature ITC) =
2!PC Unless Otherwise Specified 2ft' C Unless Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS MIN. MAX.
MIN. MAX.
ICEO VCE = 90 V.IS = 0 - 10 pA

ICED VCE = 90V - 10 ~
IESO VES=6V.IC=0 - 100 pA

IESO VEB = 5 V. IC =0 - 1 rnA
VCEO IC=10mA.IS=0 175 - V VCEO IC = 10 rnA. Is = 0 100 - V

fy VCE - 10 V. IC = 10 rnA 15 MHz
'T IC = 10 rnA. VCE = 10 V 15 - MHz hF IC = 10 rnA. VCE = 10 V 20 100
VCE!"') IC lOrnA. IS lmA 1 V
hFE IC = 1 mAo VCE = 10 V 40 250 IC = 10 rnA. VCE - 10 V 1
VSE
IC = 1 rnA. VCE = 10 V 0.5 0.7 V
VSE
ISlb VCE = 50 V •• = 0.4 • 0.2 - A
For characteristics curves and test conditions, refer to published data for prototype 2N3439
For characteristics rurves and test condition!;, refer to published data for
prototype 2N3440
Type RCA1A16 Type RCA 1A 17

Package: JEDEC TO·39 Package: JEDEC TO·39
Construction: Silicon p·n·p. epitaxial Construction: Silicon n-p-n, planar
ELECTRICAL CHARACTERISTICS. AtC... Temperature ITC) = ELECTRICAL CHARACTERISTICS. At Case Temperature ITC) =
2!f>C Unless Otherwise Specified
2~ C Unless Otherwise Specified
LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS LIMITS
MIN. MAX. CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX.
ICED VCE =-90V - -10 ~A

ICEO VCE = SOli. IS =0 - 1 ~
IEBn VES = -5 V. IC = a - -1 rnA

IESO VEB = 4 V, IC = a - 1 rnA
VCEO IC = -10 rnA. IS = a -100 - V

a -
fy VCE = 10V.lc=-10mA 15 - MHz VCEO
IT
IC = 100 mAo Is =
VCE = 4 v. C' bU rnA
90
-
V
MMZ
hFE IC = -10 rnA. VCE = 10V 40 250
hFE IC = 10 mAo VCE = 4V
'''''
40 -~-
VCE!"')
VSE
IC = -lOrnA. Is = lmA
IC- -lOrnA. VCE- 10V -1
1 V
V
1--' VCE!"') IC. 150 mA.IB = 15 rnA
IC • 10 rnA. VCE = 4 V
- 1.4
1
V
V
VSE
.- ..
ISlb VCE = -50V •• = 0.4. -0.2 - A For characteristics curves and test conditions, rafer to published data
for prototype 2N2102
For characteristics curves and test conditions, refer to published data
for prototype 2N5416
348
Type RCA1A18 Type RCA1A19
Package: JEDEC TO-39 Package: JEDEC TO-39
Construction: Silicon n-p-n, planar C,onstruction: Silicon p-n-p. epitaxial planar
ELECTRICAL CHARACTERISTICS, A t Case Temperature (TCI - ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI-
2~C Unless Otherwise Specified 2f) C Unless Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONOITIONS UNITS CHARACTERISTIC TEST CONOITIONS UNITS
MIN. MAX. MIN. MAX.
ICEO VCE - 5V,IS-0 - 10 ~A leEO VCE--5V,18- 0 - -10 ~A
IESO VES - 4 V, IC - 0 - I mA IESO VES - -4 V, Ie - 0 - -I rnA
VCEO Ic-IOmA,ls-O 10 - V VCEO IC - -IOmA,ls-O -10 - V

t,- IC - 50 mAo VCE 4V 120 MHz t,- IC- SOmA, VCE 4V 60 MHz
hFE le-IOmA V 4V 40 250 hFE Ic- 10mA, VCE- 4V 40 250
VCElsa'1 Ie - 10 mA, IS - 0.5 mA - I V VCEI..') IC- 10 mA,ls- 0.5mA I V
VSE Ie - 10 mA, VCE - 4 V 0.78 V VSE IC - IOmA, VCE' 4V -0.78 V
.. ..
For characteristics curves and test conditions, refer to pubhshed
For characteristics curves and test conditIOns, refer to published
data for prototype 2N2102 data for prototype 2N4036
349
RCA1B01
Silicon Transistor for 70-Watt
Quasi-Complementary-Symmetry E0IFLANGE) c
Audio Amplifiers with Hometaxial-Base

Output Transistors
o 0
B
tlCI-215tl
RCA1B01 is an n-p-n hometaxial-base silicon transistor ReAle01 in conjunction with seven TO-39 transistors,
in a JEDEC TO-3 package, This device is particularly suitable eleven diodes, and an 84·volt split power supply. The amplifier JEDEC TO-3
for audio-output use, and can be driven by either the output is directly coupled to an 8-ohm speaker. This amplifier
RCA 1A03 n-p-n or RCA 1A04 p-n-p transistor. is most useful for instrumentation applications where rugged-
The 7Q-watt amplifier shown in Fi.g. 4 uses the ness and raw power are essential.
RCA1B01
MAXIMUM RATINGS. Abso/ute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE ..........•..... VCBO 95 V
COLLECTOR·TO-EMITTER VOLTAGE:
With external base-to-emit1llr resistance IRSEI = 1000 , ..... . VCER 95 V
EMITTER-TO-BASE VOLTAGE ••.•••..•••..•..• VeBO V
COLLECTOR CURRENT •••.••••..•.••... Ie 16 A
BASE CUR RENT ••..•..•.••....••.
TRANSISTOR DISSIPATION: 0
At case temperatures up to 25 0C •••..
.,.
I.
115 W
A
At case temperatures above 26 C ..••.••. Derate linearly to 2000 e

TEMPERATURE RANGE:
Storage & Operating (Junction) •..•• -65 to 200 °c
At distances;;:: 1/32 in. (0.8 mml ,from case for 10 $ max 230 °c
Tvpe RCA1BOl
Package: JEDEC TO-3
Construction: Silicon n-p-n, hometaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) "'"

2!JC Unless Otherwise Specified
LIMITS
MIN. MAX.
leER VeE - 85 V. RBE -lOon - 0.5 mA
lEBO VEB - 4 V. Ie - 0 - 1 mA
.,.
VeER Ie - 0.2A. RBE - 100!!
VeE 4V,Ic lA
95
0.8
- V
MH,
hFE IC 4 A. VCE 4V 20 70
VeE('·') Ie 4A,IB 0.4 A 1 V
VBE Ie -4A, VeE 4\r 1.4 V
ISlb VCE - 60 V, t - I , 1.95 - A

6 e jO~
For characteristics curves and test conditions. refer to published
NUMBER Of THERMAL CYCLES
data for prototvoe 2N3055 (Hometaxial).
to"c THERMAL
~OUT T
Fig. 2 - Thermal-cycfing ratings for RCA 1B01.
"" "':':'lll
eo~~
, -A SLOW-8LOW
TYPE
NOTES:
1. T: Signal 564-, Signal Transformer Co., . Resistors are 1/2-watt unless otherwise 3. Capacitances are in IJF unlessotherwi$l specified, COLLECTOR-TO-£MITTER VOLTAGE {"CE1-V
1 Junius St., Brooklyn, N.Y. 11212 specified; values are in onms, 4. Non·inductive resistors. - Or equivalent,
Fig. 1 - lO-Watt amplifier circuit featuring qfJasi-compfementary-symmetry output empfoving Fig. 3 - Maximum operating areas for RCA 1B01.
homet:8xia;:base 'output transistors.
350
RCA1B04, RCA1B05, RCA1B09

Silicon Transistors for 100-,120-, 200-, and TERMINAL DESIGNATIONS
c
300-W Quasi- Complementary-Symmetry Audio
Amplifiers with Parallel Output Transistors 'CQ) Itcl-rr'lt
JEDEC TG-3
The RCA1B04, RCA1B05, and RCA1B09 load-line limiters (for overload protection),
are silicon n-p-n pi-nu transistors in a JEDEC and predrivers, may be used to develop
TO-3 package_ They are especially suitable several hundred watts of audio output power
for applications in audio-amplifier circuits, in quasi-complementary-symmetry aUdio-am-
in which they may be used as either driver plifier configurations that employ parallel
or output unit_ output transistors. Circuit examples,
These devices, together with a variety of
other transistors that serve as input devices,
VBE amplifiers for biasing, current sources,
data are shown for 100-, 120-, 200-, and
300-Wamplifiers_
~
.,
100
z
;r
:"
. I--
1\ I'...
CASE-TEMPERATURE
iiiQ
r-. "- CHANGE {b.Tc )-150·C

~
~
'I-- ~
\ "
" 1\
RCA1B05
~
RCA1B04 RCA1B09 - i I" ""
, . "i~r .. ..
.: i~o
veBO·
VeEO·
VeER RBE = 100 n
225
200
225
275
250
275
V
V
V
10
10
, .
. , "riC, ,
10 10
NUMBER OF THERMAL CYCL.ES
2
"I'.
, 10,
9ZCS·19922
VEBO· 5 V
Fig. 1 - Thermal-cycling ra'rings for RCA 1804
Ie· 7 V
and RCA 1805.
lB· 2 A
PT
At Te"; 25 0 e 150 W
0 100
AtTe> 25 0 e Dor... lI.artv 10 200 C
T stg, TJ . -65 to 200 °c
TL
At distance;;' 1/32 in. (0.8 mml
from seating plane for 10 s max. 230 DC
. . . 'lOll I: . . . .~
NUMBER OF THERMAL. CYCL.ES
Fig. 2 - Therma/-cycling rating chart for RCA 1809.
··,
10.
· , CA~E TE~PEiAlutE (ie )~25·C : Ie (MAX.I CONTINUOUS gfs~jA~~~~~=
-- --"'" '{iT
CAS~ TEt.lrERtTlu~E ITe 1=25"C
i
· , I I I
i
I I i
~
2
- -- :AI
ED
··,
j
!co!r.lNlouJ
··,, leLA);. ,lcot,INtousl
I
i , cr~
~,o lel..... x - 10
~ ':
i ·,
-":0 '0
II ~"
z
< ..~ ~
I. ~'"
~·
11'*
!Py1o+ 0.1 ic::V::~::~UER~~:~~·E~5~EARLyl
~
8 ,
I:
· 1 S/b-LIMtTED
I I-I
~' ,
j ··, IS/j-Ll1N'ir
8 WITH INCREASE IN TEMPERATURE)
""I'T: t
VCEO(MAX.I~2!50 V
S I 1
0.1
, , . VeE!
2 468
COLLECTOR-fO-EMITTER VOLTAGE (VeEI-V

, . ,. 0.1
, .,. . , 1
,. I-H,
COLLECTOR-TO-EMITTER VOUAGE (VeEI-V
100
. .. o.ot
2
2 . . ..III. I .. •
I I ,I I
10
2
100
COL.I.ECTOR-TO-EMITTER VOLTAGE IVcEI-V
2
1000
Fig. 3 - Maximum operating areas for RCA 1804. Fig. 4 - Maximum operating areas for RCA 1805_ Fig. 5 - Maximum operating areas for RCA 1809.
351

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2fSOC
CHARAC· LIMITS
TERISTIC TEST CONDITIONS RCA1B~ RCA1B06* RCA1B09** UNITS
Min. Max. Min. Max. Min. Max.
ICER
VCE = 120 V, RBE = 100 n - 1 - - - - mA
VCE = 200 V, RBe = lOOn - - - 1 - 1
lEBO VEB = 5 V, IC = 0 - 1 - 1 - 1 mA
VCEO IC=0.2A,IB = 0 200 - 250 - 250 - V
VCER IC = 0.2 A, RBE = 100 n 225 - 275 - 275 - V
fT
IC = 0.2 A, VCE = 10 V 5 - 5 - - - MHz
IC = 1 A, VCE = 15 V - - - - 5 -
hFE IC = 2 A, VCE = 5 V 15 75 15 75 40 -
VCE(S&t)
IC = 2 A, IB = 0.255 A - 2 - 2 - - V
IC=2A,IB=0.2A - - - - - 1
VBE IC = 2 A, VCE = 5 V 0.75 1.75 0.75 1.75 - 1 V
VCE=120V,t=ls 1.25 - - - - -
ISlb VCE = 140 V, t = 1 s - - 1.07 - - - A
VCE = 80 V, t = 1 s - - - - 1.875 -
... For chart;lcteristics curves and test conditions, refer to published data for prototype 2N5239
* For characteristics curves and test conditons, refer to published data for prototype 2N5240
** For characteristics curves and test conditions, refer to published data for prototype 2N6510
1(J()..WAmplifier
to provide excellent high·power performance
The l00-W amplifier shown in Figs. 6 and 7 into an 8·n load. With the exception of the
uses two RCA 1BOO transistors as drivers and RCA·CA3100 Linear Integrated Circuit for
four RCA 1 B05 transistors as parallel units front end, this amplifier is entirely push-pull
in the amplifier output stages, and operates for improved high-frequency distortion and
on a l04·V split power supply. slew rate. Additional circuit features include
This 100·Wamplifier [DC·Coupled (Fig.6) or new thermal overload protection and instant
AC.coupled (Fig.7)] is conservatively designed turn-on with no undesirable transients.
III
O.471'F
~~--~-------N~OT-E-,C-O~M-MO-N-H-E-AT-S-IN-K---2-5-,N~2-M-,N-.----------------.2-C-L--2.-.-• •- J
Fig. 6 - 100-W dc-coupled audio amplifier circuit featuring

parallel output transistors.
352 ____________________________________-----------------------------
RCA1B04,RCA1B05, RCA1B09
O.47p.F
~f---"---.....
NOT-E,-COM
.....M-ON-H-E.T-S-INK--2-5-:IN2,---M-,N,---------J
92CL-2:8992
OUTPUT HEAT SINK - ,oC/W PER OUTPUT TRANSISTOR SET IDLING CUARENT FOR 150 - 200mATHROUGH 2·A FUSE.
NOTES: 4. K·1 Relay, single-pole. single-throw, normally

1. All resistors 1/2 W, 5% carbon unless specified. closed, with 24 V, 3 rnA coil.
2. All capacitances in ~F unless specified. S. TSS1· 700 e thermal cutout, EI rnwood Sensor
3. All resistors are non-inductive. Part No. 3450-157·37, or equivalent.
Fig. 7 - toO-W ac-coupled audio amplifier circuit featuring parallel output transistors.
sw
120 V
60 H.
NOTE:
Power Transformer: Signal BO-8
(Signal Transformer Co., 1 Junius
St., Brooklyn; N.Y. 112121,or
equivalent.
Fig. 8 - Power supplV for 100-Waudio amplifiers shown in Figs. 6 and 7.
120-W Amplifier This 120-W amplifier is especially designed

for top-of-the line quadrasonic use in ap-
The,120-W amplifier shown in Fig. 9 uses plications requiring 1/2 kW of quadrasonic
four RCA 1804 transistors as parallel units sound with excellent tonal quality. The
in the amplifier output stages, and oper- amplifier output is directly coupled to an
ates on a 130-V split power supply. 8-n speaker.
353
POWER TRANSISTORS
RCA1B04, RCA1B05,RCA1B09
92CM- 220Z''''
NOTES:
1. 01·08- IN5391; 09,010 - lN914B; OIl, and ZnO thermal compound (Dow Corning
012 -IN5393 No.340, or equivalent) with T A = 45°C max.
2. Resistors are 1/2 W ± 10% unless otherwise 6. Mount on haat sink, Wakefield No. 209-AB, or
specified; values are in ohms equivalent. (Alternatively, this type may be
3. Capacitances are in IlF unless otherwise speci- obtained with a factory-attached intagral heat
fied. sink).
4. Non-inductive resistors 7. Attach heat sink cop (Wakefield No.260-6SH5E,
5. Provide approx. 10 CIW heat sinking per output or equivalent) on device end mount on same
device based on mounting with mica washer heat sink with output transistor.
Fig. 9 - 12Q-W Budio-amplifier circuit featuring parallel output transistors.
s.
1lOV NOTES:
"HI 1. 930 C thermal cutout (attached to heat sink
for output transistors (EI mwood Sensor part
No. 2455-88-4), or equivalent.
THERMAL
CUTOUT
2. Power transforme,: Signal 88-6, Signal Trans-
12) formerCo.,1 Junius St., Brooklyn, N.Y. 11212,
NOTE I
~." or equivalent.
U.e 125-V primary tap.
-N .+85
No L. N. L.
Fig. 10 - Power supply for 120-Waudioamplifierclrcuitshown in Fig. 9.
200-W Amplifier
The 200-W amplifier shown in Fig. 11 This 200-W amplifier is especially designed
uses eight RCA 1 B05 transistors, . two as to feature ruggedness in combination with
drivers and six as parallel units in the ampli- high power output and excellent high fidelity
fier output stages, and operates on a 160- V performance. The amplifier output is di-
split power supply. rectly coupled to an 8-.0 speaker.
354 ___________________________________________________________________
______________________________________________________________________________ POWERTRANSISTQRS
RCA1B04, RCA1B05,RCA1B09
NOTES: put device based on mounting with mica washer

and ZnO thermal compound (Dow Corning
1. 01-08 - 1N5391; 09, 010 - 1N6316; 011,
012 - 1 N5393_ No. 340, or equivalent) with T A = 45 0 C max.
2. Resistors are 1/2W ± 10% unless otherwise 6. Mount on heat sink, Wakefield No. 209-AB,
specified. values are in ohms. or equivalent. (Alternately, this type may be
obtained with a factory.-attached integral heat
3. Capacitances are in ",F unless otherwise speci- sink.)
fied_
7. Attach heat sink cap (Wakefield No. 260-
4. Non-inductive resistors. 6SHSE, or equivalent) on device and mount
5 .... Provide approx. 10 CfW heat sinking per out- on same heat sink with output transistor.
Fig. 11 - 200-W audio amplifier circuit featuring paralle output transistors.
sw
....,.....;-"",--
8 -A SLOW-
BLOW TYPE
120 V
60 Hz
NOTES:
1. gOOe thermal cutout attached to heat sink
for output transistors.
THERMAL 2. Power transformer: Signal 120-8 (Signal Tran~
CUTOUT
NOTE t former Co., 1 Junius St., Brooklyn, N.Y.
11212), or equivalent. Use 125-V primary tap.
+aov
M.L
92CS-220"'2R3
Fig. 12 - Power supply for 200-W audio amplifier circuit shown in Fig. 11.
300-W Amplifier
the 300-W amplifier shown in Fig. 13
formance into either a-n or 4-12 loads. With
the exception of the RCA-CA31 00 linear inte'
uses two RCA 1 B09 transistors as drivers grated circuit for the front end, this amplifier
and sixteen RCA 1B05 transistors as parallel is entirely push-pull for improved high-fre-
units in the amplifier output stages. and oper- quency distortion and slew rate. Additional
ates on a 172-V split power supply. circuit features include new thermal overload
This 300-W amplifier is conservatively de- and reactive overload protection and instant
signed to provide excellent high-power per- turn-on with no undesirable transients.
355
~ERTRAMPSTORS ____________________________________________________________________

300 WATT 'IIII!:I.IJ::J5l!_ _ _ _ _ _ _ _ _ _ _ _ --;;;==_______________-,
RC~BOS
ReAIB09
120
0.1
18
I I I I I I I I
row row row row row row row row -86Vdc
SA N.L.
RCAIBOS
IBI
II IDLE CURRENT SET RlR 50 mV ACROSS 0.111 RESISTOR
la)
,---------+VI
I ... 1+86 V)
IN8316
I
I
I I
NOTES:
I -: 1. All resistors 112 W, 5% carbon unless specified.

2. All capacitances in microfarads unless specified.
3. All resistors are non..jnductive.
I I 4. K1-Relay, single-pole, .ingle-throw, normally

closed, with 24-V, 3 mA coil. .
I I 5. TSS1-700 C thermal cutout, Elmwood Sensor

Part No. 3450-157-37, or equivalent.
6. For dc-coupled version, delete 2,OOO-I'F capaci-
I I tor, add 10-k.!l potentiometer - see 100-W am-
plifier circuit Fig.9 (a).
I I 7. Common heat sink - 25 in. 2 minimum.
I IK I
I INealS I
L ________ ~J
Ib)
Fig. 13 - 3()()"Waudio amplifier circuit featuring parallel output transistors:
(a) basic amplifier circuit. (b) protection circuit.
POWEll TRANSFORMER SIGNAL 120-20

(SIGNAL TRANSFORMER CO" "ANIUS ST.,
lROOKLYN. N.Y.IIZIZI. OR EOUIVALENT"
"-20·1. CIRCUIT IREAKER t2CS-2.12S4R2
Fig. 14 - Power supply for301J.Waudio-amplifiercircuit

shown in Fig_ 13.
.6 ______________________ __----------____----____-----------
~
_______________________________________________________________________________ POWERTRANSISTORS
RCA1B06
Silicon Transistor for 70-Watt TERMINAL DESIGNATIONS
Quasi-Complementary-Symmetry Audio
Amplifiers with Pi-Nu Output Transistors
RCA 1 B06 is an n-p-n pi-nu silicon transistor in a RCA 1 B06 output device in conjunction with
JEDEC TO-3 package_ This device is especially eleven other discrete transistors, thirteen diodes,
characterized for audio-amplifier applications, and a 90-volt split power supply_ The ampli-
and can be driven by either RCA 1 C03 or fier output is directly coupled in an 8-ohm
RCA1C04, n-p-n and p-n-p types, respectively_ speaker_ The high-frequency RCA1B06 output
The 70-watt amplifier shown in Fig_ 1 uses the transistors used in the amplifier circuit produce
excellent transient response at a high power level. JEDECTO-3
MAXIMUM RATINGS. Absolute-Maximum Values: RCA1B06
COLLECTDA·TO-BASE VOLTAGE •.... , •• , .••.. VCBO 120 v
COLLECTQR·TO·EMITTER VOLTAGE:
With base open ...•.•.... , ................ , ..... " .. , •..•.. VCEO 100 v
With external base-to·emitter resistance (ABE> = lOon VeER 120 v
EMITTER·TO·BASE VOLTAGE .....•..•••.
COLLECTOR CURRENT •••••
VEBD
IC
• A
V
BASE CURRENT .•..•..•..........•....

TRANSISTOR DISSIPATION: 0 ..,.
18 A
:~ ~: ~::~:~:~~: :.~ ;;o~ :::::... 150 0 W

'00
TEMPERATURE RANGE:
Storage & Operating (Junction I ....
PIN TEMPERATURE lOuring Soldering):
At distances~ 1/32 in. (0.8 mm) from case for 10 s max.
Derate linearly to 200 C
-65 to 200
230
'c
'c
.:r
I
,
,
Type RCA1B06 z
0
,
Package: JEDEC TO-3 " CASE-TEMPERATURE
Construction: Silicon n·pwn, epitaxial, multiple·emitter·site, pi·nu ~ I" CHANGE IATC )~!lO·C
ELECTRICAL CHARACTERISTICS,At Case Temperature (Tci = 2!t'C

.
~
;;
'I---
~
LIMITS
I---
MIN. MAX_ I
'0
, ,
ICER VCE = 90 V, RaE = 100\1 - 1 mA
Fig_ 2 - Therma/-cycling ratings for RCA 1806.
VCEO IC = 0.2 A. la = a 100 - v
t,- IC - 0.2 A. VCE = 10 V 5 MHz
hFE IC - 4 A, VCE - 4 V 10 50
vCElsa.) IC - 4A,Ia O.eA 2 v
vaE IC - 4 A, VCE = 4 V 2 V
IS(b VCE=80V,'= 1 s 1.87 - A

..
For characteristics curves and test conditions, refer to published data for
prototype 2N5840
0.00
I '0
u
~ 1t:~~"""~=!--:,."."
~
3 •.81 2
--------------,
PROTECT ION CI RCUIT
.. I
I
o. 0.27
.sw
0.'
10
, ..
100
COLLECTOR- TO· EMITTER VOLTAGE I VCEl-V
OUTPUT Fig. 3 - Maximum operating areas for RCA 1806_
+45'1
L-__~~+_------~~----~~----------------------~~~--~~- v
3. ResistOfS are 1/2·wan unless otherwise specitled; values are in ohms,
•• L-__ + ____ -'+_-4!1'1
NOTES:
1. 100°C thermal cutout attached to heat sink for output transistors 4. Capacitances are in ~F unless otnerwise specified.
(Elmwood Sensor part No. 2455-88-4).- 5. Non·inductive resistors.
2. Power transformer: Signal 12()'2 (parallel secondarv).- Signal 6. 01·08, Dl1-1N5391
Transformer Co., 1 Junius St.• Brooklyn, N.Y. 11212, 09,010,012. 01:J.tN5393 • Qrequjvalent.
Fig_ 1 - lO-Watt amplifier circuit featuring quasi-complementary-symmetry output Fig. 4 - Power suppfy for lO-watt audio-
employing pi-nu construction output transistoTS_ amplifier shown in Fig, 3_
_________________________________________________________________ 357
POWERTRANSISTORS __________________________________------------------------______________-------
RCA1C03, RCA1C04,RCA1C12, RCA1C13

Silicon Transistors for Audio-Frequency B.
Linear-Amplifier Applications
(FLACj,GEI
RCA1C03, RCA1C04, RCA1C12, and RCA1C13 are com· drivers. They may also be used in audio power amplifiers,
plementary silicon n-p-" and p-n-p transistors especially line.ar modulators, servo amplifiers, and operational amplifiers.
characterized for audio-amplifier applications. The$8 devices, The units are supplied in the JEDEC TO·220AB version of the
singly or in pairs in complementary· or quasi-complementary· plastic VERSAWA TT package. E
symmetry circuits, are particularly useful as drivers or pre· 92CS-21519
MAXIMUM RATINGS. Absolute-Maximum Values: RCA1C03 RCA lC04 RCA1C12 RCA1C13 BOTTOM VIEW
COLL~CTOR·TO·BASE VOLTAGE ..•... ...• VCBO 120 -120 140 -140 V JEDEC TO-220AB
With base open. .. . . ............ . .. VCEO 100 -100 120 -120 V
With external base·ta·emitter resistance (RSEI ;;; 100 n ... VeER 120 -120 140 -140 V
EMITTER·TO·BASE VOLTAGE. . . . . ... . . . . . . ... VEBO -5 -5 V N-P-N Types P-N-PTypes
CONTINUOUS COLLECTOR CURRENT. . . .•. . . .. Ir, 4 ·-4 -4 A
RCA1C03 RCA1C04
CONTINUOUS BASE CURRENT.... . ........... IB 2 -2 -2 A
TRANSISTOR DISSIPATION: .". RCA1C12 RCA1C13
At case temperatures up to 25 0 e . . ........... , , , 40 40 40 40 w
At case temperatures above 250 e ........ , , , . , , ..... , ...-.-- Derate linearly to 150o e---...
TEMPERATURE RANGE:
Storage and Operating (Junction) ......... , .. , , .... . _ - - - - -65 to +150 - - - -__
At distances 2. 1/32 in. (0.8 mm) from seating plane
for 10smax. +--------2~-------- __
Type RCA1C03 Type RCA lC04
Package: jEDEC TO-220AB Package: JEDEC TO·220AB
Construction: Silicon n-p-n, epitaxial Construction: Silicon p-n-p. epitaxial
ELECTRICAL CHARACTERISTICS, At Case Tamperatu,. ITC) = EL ECTR ICAL CHARACTE RISTICS, A, Case Tempera,ure ITC) =
25" C Unless Otherwise Specified 2~ C Unless Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS MIN. MAX.
MIN. MAX,
ICER V". = 110 V, RBE = loon - 1 rnA ICER VCE = -110 V, RBE = 10011 - -1 mA
lEBO VEB = 5 V, IC = 0 - 1 mA IEJllL ~--5V,IC·0 - -1 mA
VCEO IC =0.1 A,IB =0 100 - V VCEO IC = -0.1 A,IB =0 -100 - V

I -0.5A, CE'4V 4 MHz IT IC = -u.5 A, VCE - ~4 V 10 _MMZ
250 hFE IC- 1 A,VCE-' 4V 50 250

hFE IC - 1 A, VCE = 4 V 50
VCE!sa,) IC = 1 A, IB = 0.1 A - 1 V VCE(sa,) IC= 1 A,IS- 0.1 A 1 V
VBE Ic = 1 A, VCE • 4 V - 1.5 V VBe IC- 1 A, VCE- 4V -1.5 V
VCE = 40 V,, = 0.4. 1 - A ISlb VCE = -40 V, , = 0.4 • -1 - A

ISlb
.. ..
For charactenstlcs curves and test conditIOns, refer to published
For characherslstlcs curves and test conditions, refer to published data for prototype 2N6476.
data for prototype 2N6293,
Type RCA lC12 Type RCA ICI3
Package: JEDEC TO-220AB Package: JEDEC TO·220AB
Construction: Silicon n-p·n, epitaxial Construction: Silicon p-n-p, epitaxial
ELECTRICAL CHARACTERISTICS, At ea.. Temperature ITc! = ELECTRICAL CHARACTERISTICS, At ease Temperature ITc! =
2!PC UnlfIBS Otherwise Specified 250C Unless Otherwise Specified
LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX, MIN. MAX.
ICER VCE = 90 V, RBE = lOO!1 - 100 pA ICER VCE = -90 V, RBE = 100 n - -100 ~A
lEBO VEB=5V,IC=0 - 1 mA lEBO VEB = -5 V, IC = 0 - -1 mA
VCEO IC'O.l A,IB=O 120 - V VCEO IC = -0.1 A,IB =0 -120 - V
VCER IC = 0.1 A, RBe = loo!1 140 - V VCER IC = -0.1 A, RBE = loo!1 -140 - V
IT Ic·0.5A,Vce=4V 4 - MHz IT IC - -0.5 A,~" -4 V 10 - MHz
hFE IC'l A, VCE - 2 V 40 250 hFE IC=-lA,VCE=-2V 40 250
VBe Ic' 1 A, VCE - 2 V - 1.2 V VBe IC=-lA,VCE=-2V - -1.2 V
ISIb VCE = BOV, t =0,4. 0.66 - A ISlb V CE = -BOV,' =0.4. -0.66 - A
. ,
For charactenstlcs curves and test conditions, refer to published
..
For characteristics curves and test conditions, refer to published
data for prototype 2N6474. data for prototype 2N6476.
358
__________________________________________________________________________ POWERTRANSISTORS
RCA1C05, RCA1C06
Silicon Transistors for 25-Watt
Full-Complementary-Symmetry
Audio Amplifiers c
IFLANGEI
ACA1C06 and RCA1C06 are n-pon and p-n·p epitaxial·base tion with seven TO·3S discrete transistors. ten diodes, and a
silicon power transistors, respectively. These compl,mentary 52-volt split power supply. The amplifier output is directly
output devices for ludio applications are provided in the coupled to an S-ohm speaker. The full·complementary·
symmetry output stage provides excellent high-frequency
BOTTOM VIEW
JEDEC TO·220AB plastic package.
92CS-27!519
The 25,watt audio-amplifier circuit shown in Fig. 4 performance at moderate COlt.
uses RCA leOS and RCA 1C06 as output devices in con;unc- JEDEC TO·220AB
RCA1CQI ACA'COI
MAXIMUM RATINGS,Absolute·Maximum Values:
COLLECTOR·TO·BASE VOLTAGE.............................. VCBO eo -60 V
COLLECTOR·TO· EMITTER VOLTAGE:
With belli open ....•.•.• , •..• , •• ,.,',., •• , •• ,.,.. .., •• '., 60 -50 V
With external base·to-emlttat ".lstance (RBEI- 100n ., ••••• , •••• eo -60 V
EMITTER-TO-BASE VOLTAGE •••••• , ••••• ,', ••• , ••• ,.".,'"
COLLECTOR CURRENT ., ••• , •• ,., •••••••• , •••.•••••••••••••
-"
-7
V
A
BASE CURRENT •••••••••••••••.•••••••••••••••••••••••••••• -3 A
At cass temperatures up to 2SoC .••....•...•..•..•.•......... 40 40 W
At case tamperaturas above 25°C .•...........•..••.••.••..... Derate linearly to 150°C
TEMPERATURE RANGE:
Storage & Operating (JunctionJ •..••.••..•.•..••.••.••.•...... -65 to +150 'c
At dlstances~1/32 in. (0.8 mml from case of 10 s max •...•....... 230 ·C
TVpe RCA ICas

Package: JEDEC TO·220AB • • 10·
Construction: Silicon n·p-n, epitaxial base NUMBER OF THERMAL CYCLES
'lcs-laOO:SRI
ELECTRICAL CHARACTERISTICS, At Cue TemperlltufYI (TC) ..
2tfC Un"ss OthtlrwiN Spttelfittd
. Fig. 7 - Thermal-cyclingratings forRCAiC05
and RCA7C06.
CHARACTERISTIC TEST CONDITIONS h;M"IN.;.~",IMr'TSiiMAXr.v.-i UNITS
ICER VCE" 5OV,RBE -lOOn rnA
lEBO VBE=6V,IC"Q rnA
.,.
VCER IC -a.1 A,RBE""'aon
Ic .. a.1A,VCE'"4V
60 V
MH,
hFE 'C"'3A,VCE-4V 20 120
VCE(satl IC=3A,IB=O.3A 1 V
VBE IC-:l A,VCE"4V 1.5 V
L -__~IS~/b~__~L-_VC~E~·_2_0_V_,t_._0._5_'____-L__~.-L--_ ~_
For characteristics curves and tast conditions, refer to published data for prototYpe 2N6292
C;OLLECTOR-TO-EMITTER VOLTAGE IVCEl-v
TVpe RCA IC06 Fig. 2 - Maximum operating areas for RCA 7C05.
Package: JEDEC TO·220AB
Construction: Silicon p·n-p, epitaxial base
ELECTRICAL CHARACTERISTICS, At Cas. TtlmPBf'lItuI'llITCJ"
2tfC Un"'" OrhflrwiuSpecifitld
LIMITS
MIN. MAX.
leER VCE= -SOV,Rac·'OOn -1 mA
leBO VEB"'-6V,IC"O -1 mA
Q
VceR IC--D.l A,RBE -100n. -60 v ~ -0.4 -

fT IC- -0.1 A, VCE '" -4V 10 MH,
8
hFE IC "'-3A, VCE· -4V 20 120
VCElsat) IC· 3A,IB= O.3A 1 V
VBE 'C· 3A,Vce"'-4V 1.5 v '0
COLLECTOR-TO-EMITTER VOLTAGE (VCEI-v
ISlb Vee "'-2QV,t"'Q.5s -2 A

For characteristiCS curves and test conditions, refer to
publisned data for prototype 2N61D7 (File 488J. Fig. 3 - Maximum operating areas for RCA 7C06.
359
RCA1C05, RCA1C06
",
.:
c,
"
..
.
.ov
.:m...
NOTES:
1. T: Signal 36-2-. Signal Tran&former Co.,
1 Junius St., Brooklyn, N.Y.'1212
2. Resistors are 1/2·watt unless otherwise
specified; values are In ohms.
3. capacitances are in IJ.F unl_ otherwise
specifiBd.
4. Non-jnductive rnittors,
• Or equivalent.
Fig. 4 - 25-watt amplifier circuit featuring true-complementary-symmetry output with load line limiting.
~O __________________________________________________________________
RCA1C07, RCA1C08
Silicon Transistors for 40-Watt
Full-Complementary-Symmetry
c
Audio Amplifiers (FLANGE)
RCA1C07 and RCA1COB lire n·p"" and p·n-p epitaxial-base

silicon power transistors, respectively. especiallv suitable for
audio-output applications. These devices are provided in the
RCA1C07 and RCA1C08 in conjunction with seven TO·39
transistors, ten diodes, and a 64-volt split power supply. The
amplifier output is directly coupled to an a-ohm speaker.
BOTTOM VIEW E
I
92CS-21519
economical JEDEC TO·220AB version of the VERSAWA TT The high·frl?Quency performance of this 4().watt amplifier
package. wi II provide excelle'nt reproduction for the most critical JEDEC TO-220AB
The 40·watt amplifier shown in Fig. 3 uses the
listener.
RCA1C07 RCA1coa
COLLECTOR·TO-BASE-VOLTAGE •••.•.. , .••••..••••••••••.•• , VCBO 7S -75 V
With base open ...••••..••.••.•...•.••.••••.••••••••.•••.• 65 -65 V
With external basa·to-emittar resistance IRSE)" lOOn ..•..•..•.•. 75 -75 V
EMITTER·TO·SASE VOLTAGE .••.•..•..••.•.••.••.••.••..•..•
COLLECTOR CURA ENT .•.•...•.....•..•....•..••.•...•.••... ,. -5
-1.
V
""
BASE CURRENT ...•..•••.•..•. " .•••••..••••....••.••.••.•• .....
::::::::::~::::o~e~~:~
7. 75 w
::::::::::::::::::::::::::::: Derate linearly to 150°C
TEMPERATURE RANGE:
Storage & Operating (Junction) •.••.••.••.••.••.••.•.•.•.••.• '. + - -65 to 160 ---. 'c
At distances~lI32 in. (0.8 mm) trom ca;' for 105 max ........... . 'c
Type RCA1C07 10' I a 104
Package: JEDEC TO·220AB NUMBER Of' THERMAL CYCLES

Construction: Silicon n-p·n, epitaxial base 92CS-18003i'tJ
ELECTRICAL CHARACTERISTICS, At 0.# Tttmperaturtl (TcJ - Fig. 1 - Thermal-cycling ratings for

26°C Un'e" OtIMrwl.. Spscified RCA 1C07 and RCA 1COB.
CHARACTERISTIC
LIMITS
TEST CONDITIONS UNITS
MIN. MAX.
ICER VCE =65V,R SE " 100n mA
• CASE TEMPERATURE (TC ,. 25'C

leso VSE=5V.IC=0 m" I
VeER IC=O.lA,RSE = lOOn 7. v 4
I I
IT IC = 1 A, VCE 4V
• MH,
I
hF.
VCE(sat)
IC-4A,VCE-4V
IC 4A,IB'"O.4A
20 12.
1
1.5
V
V
1"'10 ~C (M~X., CON~INUJUS 0,,,
VB. IC"4A,VCE"'4V
!:! • "Ip
l- I :-o./"""~Q
2.•
i ~e-o~'
'S/b VCE=30V,t=O.5s
" Z
For characteristIcs curves and telt conditions, refer to published data for prototype 2N6292
I'";:)
4
3 - - ~---
- -+ --- ~ ...
'"
!l-
2
: !~,
<1c.- -
Type RCA ICOS
u
'"
..J
..J
•
I
Ott
I .- ,"~-
~()
--
Construction: Silicon p·n·p, epitaxial base
ELECTRICAL CHARACTERISTICS, At C.se Tem".ratu,. (Tcl =
0
u
I
1 VCEO MAX"65V -
I
2tfC Unlfls Oth",lNi_ Specified II_I I ~

I 4 I~"~ 4 'wI ~Ia
CHARACTERISTIC TEST CONDITIONS
LIMITS
MIN. MAX. "',TS I 25
COLLECTOR-TO-EMITTER VOLTAGE(VCEI-V .CI-Iln'"1
ICER VCE'" -65V,RSE = lOOn -1 mA
• For p-n-p device, voltage and current
lEBO VEB=-5V,IC=Q -1 mA are negative.
VeER Ic =-O.lA.RBE = lOOn -75 v
IT IC· 1 A. VCE--4V MH,
hFE IC - -4A, VeE"'-4V 2. 120
RCA 1C07 and RCA 1COB.
VCE(sat) Ic'"-4A,la= O.4A v
VB. IC - -4A, VCE '" -4V -1.6 V
ISlb Vce=-30V. t-0.6s -2.5 A

For characterIstICs curves end test conditions, refer to published data for prototype
,2N6l07 (File 488).
361
POWER TRANSISTORS
RCA1C07, RCA1C08
R,
R,
'" '"
C,
."
00
IJlf/4
D,
NOTES:
'"
"
;&1
1. T: Slgnll 88·2 (parallel secondary'-'
Signa' Transformer Co., 1 Junius St••
Brooklyn, N.V. 11212
D" ."
2. Resistors er. 1/2-w11tt unl_ otherwl.
IPtClfled; wlu.. are in ohmt.
3. CIpecIhnca et. In p unl. . otherwllfJ
IP8Clfltd.
4. Non-Inductlvt reslItort.
• Or equlWllent.
Fig. 3 - 40-Watt amplifier circuit featuring full-complementary-symmetry

output using load line limiting.
362
______________________________ ~ ______________________________________________ POWERTRANSISTORS
RCA1C09
Silicon Transistor for 40-Watt
Quasi-Complementary-Symmetry Audio Amplifiers
RCA1C09 is an n-p-n, hometaxial-base silicon transistor The 40-watt amplifier shown in Fig. 3 uses two
packaged in the JEDEC TO·22OAS IVERSAWA TT) cas•. RCA 1C09 transistors as output units in conjunction with
Two of these devices, driven in the class-B mode by the seven TO·39 transistors, 11 diad., and a 64""olt split power
RCA 1A06 and RCA 1A05 silicon n-p-n and p-n-p transistors, supply. The amplifier output is directly coupled to an a-ohm TERMINAL DESIGNATIONS
can be used as output devices in audio-amplifier applications. speaker. This 4O-watt amplifier features ruggedness and
economy in the mid·power range, e
I: /c
MAXIMUM RATINGS, AbllOlute-Maximum Values:
COLlECTOR.TQ..BAS"E VOLTAGE. ••• •••••••••••••••••••••••••• V CBO
RCA1C09
7. V I I
,
COLLECTOR·T()'EMITTER VOLTAGE:
With base open •••••••••••••••••• • •••••••••••••••••••••••
With external base-to·emitter resistance (RBEI = 100n ...•.........
66
7.
V
V
I I
II
..J"1..""--"'---L----1
BOTTOM VIEW
-,-
EMITTER·TQ..8ASE VOLTAGE ••••••••••.••••••••••••••••••••
COLLECTOR CURRENT •••••••••••••••••••••••••••••••••••••• ,. A
V E
92C5-27519
BASE CURRENT •••••••••••••••••••••••.•••••••••••••••••••• A
TRANSISTOR DISSIPATION: JEDEC TO-220AB
:: ::::::::::::o:=:~ :::::::::::.:::::::::::: :::::
TEMPERATURE RANGE:
7.
Derate linearly to 150°C
W
Storage & Operating (Junction) .••....•......•••..•..••..••.. -66 to 150 ·c

PIN TEMPERATURE (OuringSolderingl;
At distances ;::,/32 in. (0.8 mml from case for las max. 230 ·c
Type RCA lC09
Construction: Silicon n-p·n, hometaxial base
ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) =

2~C Unless Otherwise Specified
-
LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS .. 'TIMA)(.}"40W
MIN. MAX.
•
.,
! r& ~.I
ICER VCE" 65 V, RSE" 1000 - 1 mA
z
0
I. ,,\\ ~~I\,~"
IESO VEe=5V,lc=0 - 1 mA
~
~
1;
8
.
'0
f'\ \. \.'\~
\ 1\ ~''''
l' \ \
IC=0.2A,R s E" loon - ~
\\\~
75 V
VCER
'r-~
-
g 'I-'": ~:~o
IT IC-0.6A, VCE =4V o.e MHz in
hFE IC=4A,VCE-4V 20 120 t--

VCElsat)
VeE
IC-4A, IS -0.4A
IC-4A,VCE-4V
1
1.5
V
V
, "1 ~I ~ ~ \1>\e·K~
. . , ,1\ ..
'0' '0' '0'
NUMBER Of' THERMAL CYClES
ISlb VCE=40V,t=0.5, 1.87 - A ,lCS'18005lU
For characteristics curves and test conditions, refer to published Fig. 2 - ThermaJ-cycling ratings for RCA 1C09.
.. .....
-.
•n
co' .0.
50
''''''
1N57'4
D,
10°8
NOTES:
1, T: Signal 88·2 (parallel secondary)-,
Signal Transformer Co., 1 Junius St.,
Srooklyn, N.Y. 11212
2, Resistors are 1/2'watt unless otherwise
specified; values are in ohms.
3. Capacitances are in JJF unless otherwise
specified.
'0
4. Non·inductive resistor'$.
COllECTOR-TOk[MITTER VOL.TAGE t VeEI-V
• Or equivalent,
Fig. 1 - 40-WI!tt amplifier cirr:uit featuring quasi-complementary-symmetry output. Fig. 3 - Maximum operating areas for RCA 1C09.
363
PDWERTRANSISTORS ___________________________________________________________________________
RCA1C10, RCA1C11
Silicon Transistors for 12-Watt True-Complementary-
Symmetry Audio Amplifers TERMINAL DESIGNATIONS
9
RCA1Cl0 Ind RCA1C11 are n-pon end p-n·p epltaxial·base RCA1Cl0 and RCA1C11 dlscreto transistors. an integrOtod
silicon power transistors, respectively, eapocially character· circuit, one diode, and a 36-volt split power supply; the (FLAl!GEI
ized for audio-output service. To enhance circuit economics, amplifier output is directty coupled to an 8-ohm speaker.
they are flI'CI¥Idod In the JEDEC TD·220AB version of the The integrated circuit-true-complementary-symmetry com-
VERSAWATT plastic packaga. bination provides a high-qualitY,low-cost amplifier.
The 12-watt audio amplifier circ;uit shown in Fig. 4 The RCA CA3094AT intesrated circuit provides sufficient BOTTOM VIEW
USII RCA1Cl0 and RCA1C11 as output cliVI... in con· drive current for the complementary-symmetry output stage. 92CS-27519
iunction with three discrete translltG!'S. two diodes, and a Tone controls. bass and treble. with functions of "boost"
lingle 3&vo1t· power supply; the amplifier output is and "cut" are incorporated into the feedback loop of the JEDEC TQ.220A8
_Itively couplod to an B-ohm spaaker. The choice of a amplifier, resulting in e~cellent signal·to-noile ratio and
~pl.montory..ymmetry output stage provides excel· freedom from distortion. Ratings and characteristics of type
lent f"odeIity for a low-cost system. CA3094AT ..e given in RCA data bulletin File 699.
The 12-watt amplifier circuit shown in Fig. 5 uses
ReAte!O ReAten
MAXIMUM RATINGS, AbIOIute-Maximum Vaillft:
COLLECTOR·To-aASE VOLTAGE .................. _...... _. .. VCBO 40 -00 V
COLLECTOII·T().EMITTER VOLTAGE,
With ta.e open •••••••••••••••••••• _••••••••••••••• _. •• • •• VeEO 40 -00 V
With ,xtarnll ~Itt.. mlttence (RSE) • 1000 .••••••.•••• VeER 6Q -50 V
EMITTER-To-aASE VOLTAGE................................ VEBO -Ii V
COLLECTOR CURRENT •••••••••••••••••••.••••••••••••.•••• Ie -1 A
BASE CURREN" • • • . • • • • • • • • • • • • • • • • • • • . • • • . • • • • . • • • • • • . • • • • 18 -3 A
:~==:::::::~ :::::::::::::::::::::::::::::
40 40 W
Derate Hnearlx to 150°C
TEMPERATURE RANGE:
Sto,. . . . Operating (Jul'lC1lonl ••••••••••••••••••••••••••••••• '--66to150~ ·c
PIN TEMPERATURE fDurlngSolderlng):
At dlltllncet~1/32ln. (0.8 mml from call for 10 I max •.••••••.••. ~ 230 _______ ·C
Type RCA1C10 Type RCA tC11

1'IaItqI: JEDEC TO·22OAB Package: JEDEC TO·220AB
Conatructlon: Silicon n·pon, epitaxial·base Construction: Silicon p·n·p, epitaxial base
ELECTRICAL CHARACTERISTICS, At Q/ae T",,_roITc;J - ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) -

25'c Un_ 0 - " Specified 25'C Unless Otherwi.. Specified
LIMITS~ LIMITS
FHARACTERISTIC TEST CONDITIONS TEST CONDITIONS
MIN. MAX. UNITS CHARACTERISTIC
MIN. MAX.
UNITS
ICER VCE - 35 V, RBE -.Ioon - 10 pA

ICER VCE = -35 V, RBE = 1000 - -10 jJA.
lEBO VEB"5V - 1 mA lEBO VEB=-5V - -1 rnA
VCEO IC = 0.1 A,IS = 0 ~ - V VCED IC = -0.1 A,IB = 0 -~ - V
VCER IC· 0.1 A, RBE -loon 50 - V VCER IC = -0.1 A, RBE = loon -50 - V
IT VCE' 4 V,IC -0.5A 4 - MHz IT VCE=-4V,IC=-O·5A 10 - MHz

hFE IC·I.5A,VCE"4V 50 250 hFE IC = -1.5A,VCE - -4 V 50 250
VCE(utl IC - 1.5 A,IB ·0.075 A - 1 V VCE(utl IC = -1.5A,IB - -O.075~ - -1 V
VBE IC = 1.5A, VCE - 4V 1.5 V VBE IC --1.5A, VCE =-'lV -1.5 -V
ISib VCE -20V, t=0.4s 2 ~

A ISlb VCE = -20 V, t=0.4s -2 - A
For ch...cterlstlcs curves and test conditions, refer to published data for For ch.8Cieristicl CUNR and uit conditions, m.r to published data for
prototype 2N6292 prototype 2N61 07
364
___________________________________________________________________________ ~ERTRANSISTORS
RCA1C10, RCA1C11
10!
.
,
Ie MAX·ICONTINUOUSI
I
I
'I
,
CASf, Tl:MPERATURE ITC1.2~-C
"4"",,/,6
~~ 1--+-
~--j. '-.
~ ·
L···
M~: I MAX.f CONTINUOUSI
I
IC'''~'r'''''T'''''''''''C
":"''' j
~~.f-I--
1~
·
',1-
!
.
0
-i\"r- ~ Lllb-UMITEI
-- . . ..-. -;-.:-tT~
IS/b":'"LlMITEO I.!
~ -0.4 1-- - -1-
. .. -v:J::±I~
'1-- -- -I I I I
-O.t I-- .-1
0.1
, . .. -···"'1 i __
!U 10
I
40
COLL!:CTOR-TO-EMITTER VOLTAGE (Vc.e:1-V
70100 -, ·or •
CCM.LlCTOR-TO-IM'TTU VOL,,,,I IVCII-V
"'14.1D~.·
HUMBER Of' THERMAL CYCLES

QCt·I.4f1
Fig. 1- Therma/-cycling ratings for RCA ICTO Fig. 2 - Maximum operating areas far RCAICta. Fig. 3 - Maximum aperstingarus far RCA'C".
and RCAICII.
~~~11
I-A SLOW-SLOW
TYPE
NOTES:
1. T: Thordarson 23V"S, Stancor TP4, Triad
F-93X, or equivalent (for Stereo
Amplifiersl.
2. Resistors are 1/2-watt unless otherwise
3. Capacitances are in pF unless otl'1erwise DC-INlle!
specified. D2- IN34
4. Non-inductive resistors,
Fig. 4 - 12·watt amplifier circuit featuring complementary-symmetry output.
0.01 no
~
.ov ,---+-,....---r-------+ I• y
TI 220
SOH:c I.
I<___-!-.:.::"I"
-18'"
NOTES:
1, T: Stancor NO,P-8609 (120 v AC to
26.8 v CT@ 1 AI or equivalent
2. FOR STANDARD INPUT: Short C2;
R, = 250 K; C1 .. 0.047 {JF; Remove R2
3. FOR CERAMIC-CARTRIDGE INPUT:
.2
I.'.
C, = 0.0047 JJF; Al = 2.5 MQ; Remove
Jumper from C2; Leave R2.
4. 011NS392
5. Resistors are 1/2-watt unless otherwise
:--~t--;::=::;;;;::::::+===j----lIy
6. Capacitances are in tJF unless otherwise
specified.
"UIIP!R
7. Non-inductive resistors.
Fig. 5 - 12-watt amplifier circuit featuring an integrated-circuit driver and a tru(I-Camplementary-

symmetry autput stage.
366
POWER TRANSISTORS
RCA1C14
Silicon Transistor for 25-Watt Quasi-Complementary-

Symmetry Audio Amplifiers TERMINAL DESIGNATIONS
RCA1C14 isan n-p-n hometaxial-base silicon power transistor uses two :RCA1C14 transistors in conjunction with seven B
provided in the JEDEC TO-220AB package. This device is TO·39 low-level audio transistors, 11 diodes, and a 52-volt
taa
ideally suited for use in the output stage of ·quasi- split supply. The amplifier output is directly coupled to an
complementary-symnietry audio amplifiers S.ohm speaker. Ruggedness and economy are features of this
C
The 25-watt audio-amplifier circuit shown in Fig. 2 high fidelity amplifier.
RCA1C14
BOTTOM VIEW
92CS-21519
COLLECTOR·TO·BASE VOLTAGE .••.••••••••....•.....••...•. V CBO 60 V
COLLECTOR·TO·EMITTER VOLTAGE: JEDEC TO·22OAB
With base open ••••••••••.•••••••••••..••.••....•.••..••.• 40 V
With external base-to..eminer resistance (Rae) = lOOn .•••.••••••• 60 V
EMITTER-TO·BASE VOLTAGE ............................... . V
COLLECTOR CURRENT .••••••••••.•••••••••••••••••••••.•• A
BASE CURRENT .••••••••••••.••••••••••••.••••••••••.•••••• A
At case temperatures up to 2SQC .••..••.••••••••••..••.•.•••. 50 W
At case temperatures above
TEMPERATURE RANGE:
25°C ..••.••.•... . ••.•..•••••.•..
Storage & Operating (Junction) .••.......•......•........... ,

Derate linearly to 150°C
-66 to 150 ·c .
1
At distanctls~1/32 in. (0.8 mm) from case for 10 s max ..••••.••••• 230 ·c -
ELECTRICAL CHARACTERISTICS, At Cas. Temperature (Tel'
2~C Unless Otherwise Specified
LIMITS
MIN. MAX.
ICER VCE =SOV, RBE' 1000 - 0.5 rnA
lEBO VES'5V,IC'0 - 1 rnA I.' • • 10· • "0'

NUMSER 0' THER''',L CYCLES
'2CS~I'OOlfll
VCEO IC = 1 A,IS =0 40 - V Fig. 1 - Therma/-cycling ratings for RCA 1C14.
VCER IC·O.l A, ~BE' lOon 60 - V

IT Ic=0.5A,VCE'4V O.S - MHz
hFE IC·3A,VCE·4V 20 70
VCE( .. t) IC' 3A.IS = 0.3A - 1 V
VSE IC'3A,VCE·4V - 1.4 V
ISlb VCE·4OV.t.O.5 s 1.25 - A
For characteristics curves and test conditions, refer to published data for prototype
2N5495
o
~ I j.----~--~-+-r~--_+--~P-+-+;
j •
.
S •
,
2 6 8 10 2 4 6 a 100
COLLECTOR-lO-EMITTER VOLTAGE \ VCE1-V
Fig. 3 - Maximum operating Breas for RCA1C14.
NOTES:
1. T: Signal 36·2-, Signal Transformer Co"
1 Junius St., Brooklyn, .N.V. 11212
2 •. Resistors are 1/2'watt unless otherwise
specified: values are in ohms.
3. 'Capacitances are in IlF unless otherwise
specified.
4. Non-inductive resistors .
• Or equivalent.
Fig. 2 - 25-watt amplifier circuit featuring qUBsi-comp/ementBry-symmetry output.
366
POWER TRANSISTORS
RCA1C15, RCA1C16
Silicon Transistors for 20-Watt Full-Complementary-Symmetry

Audio Amplifiers with Darlington Output Transistors
The RCA1C15 and RCA1C16 are comple- The 20-watt audio amplifier shown in Fig. 5 TERMINAL DESIGNATIONS
mentary. silicon n-p-n and p-n-p Darlington uses the RCA1C15 and RCA1C16 as out-
transistors. They are especially suitable for put devices in conjunction with seven dis-
use as output devices in audio applications. crete transistors, eight diodes, and an inte-
These transistors are provided in the econ-
omical JEDEC TO-220AB straight-lead ver- grated circuit. With the exception of the
sion of the VERSAWATT package. Optional RCA CA3140B linear integrated circuit for
lead configurations are available upon request. the front end, this amplifier is entirely push-
92CS-27!520
pull for improved high-frequency distortion
and slew rate. BOTTOM VIEW
r----------, JEDEC TO·220AA

I I
MAXIMUM RATINGS, I I
Absolute-Maximum Values:
RCA1C15 RCA1C16
I I
I I
VCBO .............. ..
VCEO(sus) .......... ..
VCER(sus)
80
80
-00 V
-80 V
I
IL _ _ _ _ _ _ _ _ _ .....l
I
I
(FLA'i.OEI
o
R BE =100n ......... 80 -80 V
VCEV(sus)
'2CS-28597
V BE=I.5 V reverse bias .• 80 -80 V 92CS-27'I9
-5 V
Fig. I - Schematic diagram for RCA ICI5.
V EBO .............. . 5
BOTTOM VIEW
IC ..............•.... 10 -10 A
ICM .• .•••• .•.•. •.••. 15 -15 A r-----------, JEDEC TO·220AB
IB ...................
PT
0.25 --0.26 A I I
AtTC..;25aC 66 66 W I I
At T C > 25°C derate linearlv - 0.52 - wfOc I I
T stg ' TJ .............. -66 to +150 °c I I 1
TL
At distanca ;;;. 1/32 in. (0.8
IL _________ ...JI
!•
., I I
~
mm) from s.. ting plane for E
- - 2 3 5 - - oC !res-zoln'"
10 s max. • •.••••.•• ~ 2
Fig. 2 - Schematic diagram for RCA ICI6. \~
Type: RCA1C15, RCA1C16 Package: JEDEC TO·220 i. 10
'I'
.~
• ~ %
~
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 2fiOC, unless otherwise speci·
I II ~~l>~~~.
1\ I~
fied
LIMITS
1 ..
IO!
~
\"
2 4 ' 1104 2 4 ' 8'05 2 4 ' 8'06
CHARAC· NUMBER Of' THERMAL CYCLES
TERISTIC TEST CONDITIONS· RCA1C15* RCA1C16** UNITS
Min. Max. Min. Max. Fig. 3 - Thermal·cycling rating chart for
ICEO VCE=80V,IB=0 - 1 - -1 mA both types.
ICEV VCE = 80 V, VBE = -1.5 V - 0.3 - -0.3

mA
Tc - 1250 C VCE -80V, VBE = -1.5 V - 3 - -3
lEBO VBE = 5 V, IC - 0 - 5 - -10 mA
I CASE TEMPERATURE (TC I_ 2S-C
VCEO(sus) IC = 0.2 A, IB = 0 BO - -80 - V • ~~
ICURYES MUST IE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE I
VCER(sus) IC = 0.2 A, RBE = 100 n 80 - -80 - V ~IO

I'
VCEV(sus) IC = 0.2 A, VBE - -1.5 V 80 - -80 - V ~ DI8S~r9~R..Al12~Tro\
hFE
VCE(sat)
IC=3 A, VCE =5 V
IC - 5 A, IB = 0.01 A
1000
-
20,000
2
1000 20,000
- -2 V I.':
~
:x
~
VBE
VF
I htel
IC=3A,VCE-5V
IC - -10 A
IC= 1 A, VCE -5 V,t -1 MHz
-
-
20
2.8
4
-
-
-
20
-2.8
4
-
V
V
0.1
.
Ii! •
~
YCEDtMAXI- lOY
.;.
\
_I
ISlb VCE = 25 V, t - 1 s 2.6 - -2.6 - A 4"
10 100
4 6'
1000
• For RCAl C16. reverse polarity o-f voltage and current. COLI.ECTOR-TO-EMITTER VOLTAGE (VCE)-V
* For characteristics curves and test conditions. refer to published data for prototype 2N6388 92CS-29287
** For characteristics curves and test conditions, refer to published data for prototype 2N6668. Fig. 4 - Maximum operating areas for
both types.
_________________________________________________________________ 367
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
RCA1C15, RCA1C16
Ie) Amplifier with Be coupling 92CL-29288
(b) Amplifier with de coupling ...........

NOTES: 4. Capacitances are in /tF unless otherwise
1. D1-D2=D1300A;D4-D6=lN914 specified
2. Zl-Z2 = 1 N4744 5. Non·inductive resistors
3. Resistors are 1/2·watt, ±10% unless 6. Heat sink for output transistors sh.ould
otherwise specified; values are in ohms be 1.30 C!W(Wakefield No. 421, or
equivalent}
Fig. 5 - 2o-watt audio-amplifier circuit featuring full-complementary·symmetry with
Darlington output transistoTS.
368 __________________________________________________________________
POWER TRANSISTORS
RCA1E02, RCA1i::03
Silicon Transistors for Audio-Frequency Linear-Amplifier

Applications
RCA1E02 and RCA1E03 are silicon n-p-nand p-n-p transistors. larty useful as drivers or preddvers. They may also be used
respectively. These complementary devices are especially in audio power amplifiers, linear modulators, servo amplifiers,
characterized for audio-amplifier applications. They may be and operational amplifiers. The units afe supplied in the
used singly or as a complementary pair in complementary- JEDEC TO-66 package.
or quasi-complementary-symmetry circuits, and afe particu- TERMINAL DESIGNATIONS
MAXIMUM RATINGS, Absolute·Maximum Values: c
COLLECTOR· TO· BASE VOLTAGE.

With base open
With external base-ta-emitter resistance tRBE) "" 100.n.
EMITTER·TO·BASE VOLTAGE
COLLECTOR CURRENT. .
VCBO
VCEO
VCER
VEBO
IC
RCA1E02
200
175
200
RCA1E03
-200
-115
-200
-S
-2
V
V
V
V
A
'Q5 JEDEC T0-66
BASE CURRENT IB -1 A
At case temperatures up to 2SoC 35 35 W
At case temperatures above 25°C Derate linearly ~o 200°C
TEMPERATURE RANGE:
Storage and Operating (Junction) '4-- -65 to + 2 0 0 - . . DC
At distances;;:;" 1/32 in. (0.8 mm) from case for 10 s max, + - - - - 230 _______ DC
Type RCA 1E02 TVpe RCA 1E03

Package: JEDEC TO·66 Package: JEDEC TO·66
Construction: Silicon n-p-n Construction: Silicon p-n-p
ELECTRICAL CHARACTERISTICS, At Ca .. Temperature ITCl = ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) =>
2~C Unless Otherwise Specmed 2SOC Unless Otherwise Specified

LIMITS LIMITS
CHARACTERISTIC TEST CONDITIONS UNITS CHARACTERISTIC TEST CONDITIONS UNITS
MIN. MAX. MIN. MAX.
ICER VCE = 120 V, RBE = 100 n - 100 ~A ICER VCE ' -120 V, RBE' 100 n - -100 ~A
lEBO VES = 5 V, IC = 0 - 1 mA lEBO VEB'-5V,IC=0 - -1 mA
VCEO IC=O.l A,IB=O 115 - V VCEO Ie = -0.1 A,IB =0 -115 - V
VCER IC = 0.1 A, RBE' 100 n 200 - V VCER IC' -0.1 A, RBE = 100 n -200 - V
hFE I C ' 0.3 A, V CE ' 2 V 30 150 hFE IC = -0.3 A, VCE ' -2 V 30 150
VBe IC' 0.3 A, VCE = 2 V - I V VBE Ie =-0.3 A, VCE =-2 V - -1 V
ISlb VCE = 80 V, t = 0.4 s 0.4 - A ISlb VCE =-80 V, t =0.4 s -0.25 - A
For characteristics curves and test conditIOns, refer to published data for
For charactenstics curves and test conditions, refer to published data for
prototype 2N6211
prototype 2N3S83
369
RCA410
High-Voltage, High-Power Silicon N-P-N Transistors
Features:
For Switching and Linear Applications in
• Maximum satl-araa-of-operatlon curvlI
Military, Industrial, and Commercial Equipment
• Low saturation voltagl: Vcebat) ~ 0.8 V (max.)
voltage values, the RCA·410 is especially suitable for use in • High vollllge rating: VCEolsu.1 = 200 V
RCA·410 is an epita)(ial silicon n-p-" power transistor
utilizing a multiple-emitter·site structure. This device inverters, deflection circuits, switching regulators, high- • High dissipation rating: Pr = 125 W
employs the popular JEOEC TO·3 package. voltage bridge amplifiers, ignition circuits, and other high·
Featuring high breakdown·voltage ratings and low saturation- voltage switching applications.
MAXIMUM RATINGS. Ablolut",MalCimum V.'uft: TRANSISTOR DISSIPATION, ~T:

COLLECTOR·TO·BASE At case temperature. up to 25 C
VOLTAGE, VCBO ............. " .............................................. 200 V A;:~:~e~:r:~:r~.vu~.~~.26.oC......................................... 125 W
COLLECTOR·TO·EMITTER and VCE above 75 V .................................. See Fig. 2.
SUSTAINING VOLTAGE
At case temperatures above 25°C
With base open, VCEOlsus) ................................................. 200 V
and VeE above 76 V ................................ 88e Figs. 1 & 2.
EMITTER-TO·BASE VOLTAGE. VEBO ............................... V
TEMPERATURE RANGE:
COLLECTOR CURRENT: Storage & Operating (Junction) ........... -65 to +200 OC
Continuous, Ie .................................................................... 7 A JEDEC TO·3
PIN TEMPERATURE (During Solderingl:
PfHlk....................... ............................ ........................... 10 A
At dlstanc,s > 1/32 in. (0.8 mml
BASE CURRENT (Continuous), 'e ............................. A from case f"; 1a 5 mu: ...... .. 230 DC
NO'TE: CURRENT DERATING AT CONSTANT .

VOL.TAGE APPl.IE9 ONI.'( TO THE 0199IPA,.ION-
L.IMITEO PORTION AND THE IS/b-LIMITED
PORTION OF MAXIMUM OPERATING AREA
i~:~Mi~\.2~L.B~ ~~TRD1~AtfA~~E 1
tHrmm11 err; Iii
25 50 15 100 125 150 ,15 200

CASE TEMPERATURE "CI--C
tiCS-111M
Fig.1-DilSipstion BIId current d,rating curves.
.., COLLECTO\R-ii~MITTr VOiTAGE,IVCEI'5V !

, 90.
'I~ :
IkJz.'5 751~
b~ ICA(. TE~TU"
ITC 1'2
'f!
i~
;g
o·
2
1.5
Irr :
605 2
45u~
~~
o~
~:: 1
II_I~ 1\ a~
.c
30~::
r--...~
<
li I ~
i
--jtT~
. .. , .,. . ... "
0.5
~
0.01
, 0.1 I
0
'0
COLLECTOR CURRENT l1 C I-A IICS-IVOtS
Fig.3- Typical de beta characteristics.
COLLECTOR-TO· EMITTER VOLTAGE 1Vee'5 v
1
;J •
I 4
~
Fig.2-Maximum operating BnNII. 8 2
0.5 I 1.5
8ASE-TO-£MITT£R VOLTAGE 1Y8E1-V
51$5·40"""
Fig.4- Typical transfer characteristics.
370 ______ ~ ______________________________________________________ ___
RCA410
ELECTRICAL CHARACTERISTICS, c... T.m....tur. ITCI • 25°C Unl.1i Otherwi.. Specified
-
TOR Condhiom
DC
DC DC
Emitter
C...._il1ic Sv- CoIl_or CUrrln1 Limi'! Units
VoI__ IVI
....
Vol __ IVI IAI
VCE VEl Vlf IC II Min. Typ. M...

COllector-Cutoff Current'
With base open ICEO 300 - - 0.25
With base-eml ...:e, ,unction
reverse·blased ICEV 300 ·15 - 025 mA
With base-emuler lunctlon
reverse·tilased • T C 125°C
Emlner-Cutoff Currena
. ICEV
lEBO
300
5
-1.5 - - 0.5
5.0 mA
DC Forward·Current 5 '.()II 30 90
Transfer Rallo hFE 5 2.5" 10
Collector-Io-Emltler Sustaining
Voltage VCEOlsu,l b 0.1 mb V
With base open
Base-to- Emitter Saturation Voltage VBElsa.1 1.00 01 09 1.5 V

Collector-fa· Emitter Saturation
Voltage VCE lsa " 1.0" 01 02 08 V
Second-Breakdown Collector Current
'With bast! forward-biased) IS.be 150 0.3 A
Pulse duration (non-repetltlvel 1,
Gain-BandWidth Product fT 10 02 2.5 MHI
SWitching T,me. O.II1Bll

Rise 1.0 0.35
" -0.5I1B21
O.II1Bll
Storage
"
10
·0.5I1B21
- 1.4
'"
Fall
O.II1Bl. 0.15
1.0
'f -O.S IIR.,.
Thermal Res,stance Uunct,on-to-Caset R"JC 10 5 - 1.4 °CIW
• Pulsed; pulse duration ~350 ,.S, duty factor'" 2%. bCAUTION The sustalnmg yol.age VCEO(sus. MUST NOT be measured on a curve tracer.
c .SJb IS defined as the current at which second breakdown occurs in a speCified collector voltage
wlth·the emlCler·bese Junction forward·b.ased for Irans'stor operation In the active region.
eASE 1'£MPUtATUIIl (Tc I· 25- C -z,·, PULSE DURATION S 20,...

REPETITION RATE "'DO HI
COLlECTOR -SUPPLY VOLTAGE IVCClol75 V
DC BETAolc:/Ial*IO,III--Ila/S
0·'
,
;'0.5
CASE TEMPERATURE ITC •• 2S·C
~0.4
0.'
~j 03
E
~"
11
.
•
~
02
0.'
, 2 •
I 2 3 4 5 6 7 COLLECTOR CURRENTIICI-A
COLlECTOft-TQ-EN'TTER VOL.TAGE IVai-v "e"I,OI:.
COLL.ECTOR CURRENT IIel-A 'leS-ltl4. 'ICI-".'"
Fig.5- Typica' output chBl"BCtBristics. Fig. 6- Typical saturation voltage characteristic. Fig. 7- Typical fall t;mtI lIS. collector current.
PULSE DUIIATIONS20".
_",TITiaN "ATE-IOOHI
...
I
.
COLLECTOIt-SUPPLY VOLT..GE 1Ve(,o'75 v
DC IETA-1C/I.I,"IO,III"-IIZI5
CASE TEIllPERATUREITCloZ5*C
..•
t 11.0
I •
~.. 1.0 ~. 0.8
II II
~ ~
~ 0 .•
! 0.0 ~ 0.4 PULSE DURATION s 20,...
REPETITION RATE *100 HI
COLLECTOR-SUPPLY VOLT.Ii8E l'bc'-1715Y
0.2 OC lETA. Ie 1111 -IOj III - ~Ia2/15
CAU TEMPERATURE ITc I • nee
I • •
COLLECTOR CURRENTIICI-A tIC.· .."" COLLECTOR CURRENT II C1-A
Fig.B- Typical rise time vs. collector current.
Fig.9- Typical storage time LIS. collector current.
________________________________________________________________ 371
POWERTAANSISTORS _______________________________________________________________________________
RCA411
High-Voltage, High-Power Silicon N-P-N Power Transistor

For Switching and Linear Applications in Features:
Military, Industrial, and Commercial Equipment • Maximum . . . .,..-ot-oper.tlon cur...
• Low .....atian YO ..... : VCE(sat) ·0.8 V (....1
RCA-411 Is an epitaxial silicon n-p-n power transistor voltage values, the RCA-411 is especially lLIi~ble for u. in • High YOlta.. rating: VCEo(.UlI- 300 V
utiiizing • multipl......ltterasita structure. This device inverters, deflection circuits, switching regulators, high- • High dluipotian roti,.: ..,. -125 W
employs the popular JEDEC TO-3 pockoge. voltage bridge amplifiers, "idon circuits, and other high-
Fllturing high _ _ ·""Itoge ·ratlnlll.-.d low saturation- voltage switching applications.
c
'0
MAXIMUM RATINGS. Abao/u""'x/mum V.hIIa: BASE CU RRENT IContlnuDus), IS ....................................... 2 A
COLLECTOR·TO·BASE
TRANSISTOR OISSIPATION~,:
VOLTAGE. Vcao ............................................................... 300 V
Atc8S8temP8f"81:urn
up to 25 C
125 W
COLLECTOII-TO'£MITTER A::::n::=u~nV~·;;·25°C································· .. ··' ....
SUSTAINING VOLTAGE:
With . . . open, VeEOt.... ................................................. 3DO V and VCE above 75 V .......... ~...................... See Fig. 2.
At c.- ttrnI*Itur.1Ibove 25 C
EMITTER·TO-BASE and VCE above 75 V ................................ S.. Figs. 1 .2. un-mt.
VOLTAGE_VEBO··.... ·..·..·........ •......................................... 6 V
TEMPERATURE RANGE:
COLLECTOR CURRENT: Storage. Opere1ing (Junction' ............................ -86 to +200 arc
Continuo"" Ie .................................................................... 1 A JEDECTO-3
.......................................................................................... 10 " PIN TEMPERATURE IOurine Solde,lng»:
>
At dilltllrlces 1/32 in. (0.8 mm)
from c&II fOr 10 • mex ............................................... . 230 "C
PULSE OPERATION"
25 50 ."
CASE TEMPERATURE
100 125
(Te) _·c
Fi,l. 7-0illiptltion MldcurrantdlNotfng_

ISO '"
......- 200
3.5 COLLECTOR -TO' EMITTER VOLTAGE (VCEI- 5v
, 'l~ j J '
0.01
... 0.1 I
COLLECTOR CURRENT IIC I-A
. .. 10
tteS-llon
Fig.3- Typical de beta characteristics.
.. 10
.. 100
COLLECTOR .. TO- EMITTER VOLTAGE (VCE) -V
. .. .. 1000
0·'
92CS-1I240 0.0
Flg.2-Maximum ~tlng areas.
I 2, l 4 5 & 7
COLLECTOR-TO-EMITTER vOLTAGE IVai-V
Fig. 4- Typical output characteristics.
~2 ______________________________________________________________
RCA411
ELECTRICAL CHARACTERISTICS, Case Temperature (Tct· 25°C Unless Otherwise Specified
Test Conditions
DC
DC DC
Emitt.,
Charac,eris.tc Symbol Collector Current limits Units
or_
Voltage CVI CAl
Voltage CVI
VCE VEB VBf IC IB Min. Typ. Max.
With base open ICEO 300 - 0.25
With base-emitter lunctlon
reverse-biased 300 15 - 0.25 mA
'CEV
With base-emiller JunctIon
reverse·blased & T C 12SoC 'CEV JOO -1.5 - - 0.5
Emltter·Cutoff CUffent 'EBO 5 5.0 mA
DC Forward-Current 5 1.08 30 90
Transfer RatiO hFE 5 2.5a 10
Collector to-Emltl!:!'r Sustaining

Voltage VCEOlsusl b 0.1 3fXi> V
With base open
Ba!>e to Emlrter S.UUlatIQtl Voltage VSEfsatl 1.0" 01 - 0.9 1.5 V

Collector·la-Emltter SalUliHlon
VOllage VCE 1satl 1.0" 01 02 0.8 V
Second-Breakdown Collectol Current
JWllh basI:!' torwC:lrd·bldsedl IS,be 150 0.3 A
Puhe dUfdtlon (non.repetltlve)
Gain-Bandwidth Product
" 10 0.2 - 2.5 MHz
'T
S.Nltchlng TIme
O.II1Bll
Rise 1.0 0.35
" -0.SIlB21
O.II1Bll
Storage
"
1.0
0.SIIB21
- 1.4 - "'
Fall
0.1 (lBll
'I 1.0 0.15
-0.5 (1",1
Thermal Resistanc:e (JunctlOn·to·Casel R'JJC 10 5 1.4 °C/W
-
a Pulsed. pulse duration ::;;;'350.us. duty factor"" 2%. bCAUTION The sustalnln~ voltage VCEO(susl MUST NOT be measured on a curve tracer.
e IS'b IS defined as the current at which second breakdown Occurs at a specifIed collector voltage
With the emltter·base Junction forward·blased for tranSistor operation In the active
.I
~ 5
COLLECTOR-TO-EMITTER VOLTAGE IVCE!"5 V
;
~
.~
4
3
~
8 2 0.'
0.1
0.5 I 1.5 1 2 ,
BASE·TO-EMITTER VOLTAGE tVaEJ-V COLLECTOR CURRENTIIcl-A
nCI-III'" nC'-IN4I
Fig. 5- Typical transfer characir:rist/cs. Fig.6- Typ;cal6IJturation voltage charat:terist/c. Fig. 7- TypiCBI foil time .s. ""I/sctor C""""t.
r~~~~L~~Dfu.~A~TI~ON~.~2i:0~".~~~~::~~~~~
REPETITION RATE -100 Hz
1.5 COLLECTOR-SUPPLY VdLTAG£IVCC,a 200'1
DC BETA "IC/181-10. I81" -I.2/~
1.2
t
CASE TEMP£RATUREITcla25-C
aI 1.0
I
;- D.•
ll.o
~
;:: ~
~ [: PULSE DURATION s 20 "..
0.2 ~O~\~~~:-i~.~~/;200V
CASE TEMPERATURE CTc '- 2!1-C
1 2 •
COLLECTOR CURRENT! Ie 1- A COlLECTOR CURRENT (IC) -A
HCS· ..Z47 ."5-1124'
Fig.B- Typical rise time lIS. collector current. Fig.9- Typical storage time VS'. collector current.
___________________________________________________________________ 373
RCA413
High-Voltage, High-Power' Silicon N-P-N Power Transistor
Features:
Military, Industrial, and Commercial Equipment • Maximum " ••,ea-of..operation curVft
• Low "Motion voltage: VCEloat)- 0.8 V lmax.1
RCA-413 is an epitaxial silicon n-p-n poW«' transistor voltage values, the RCA·.13 is especially suitable for use in • High voltage rotlng: V CEDI... ) =325 V
utilizing 8 multiplHlmitter·site structure. This device inverters, deflection circuits, switching regulators. high·
• High dissipation rating: PT:II 125 W
employs the popular JEDEC TO-3 package. voltage bridge amplifiers, iW'lition circuits, and other high-
Featuring high breakdown-voltage ratings and low saturation- voltage switching applications.
MAXIMUM RATINGS,·AbloItI"'''1fimum "-/wi: BASE CURRENT (ContlnuOUI), IB ....................................... 2 A
C
'0
COLLECTOR·TO-8ASE TRANSISTOR DISSIPATION,,:
VOLTAGE. VeBO .............................................................. «10 V At case temperatures up to 26 C
COLLECTOR·TO-EMITTER
SUSTAINING VOLTAGE
A:::,.::.!V~.~~.ioc·· . . . .·. . . . . . . . . . . . . . . . 125 W
With". open. VCEOflUl1 ................................................. 325 V and VeE above 76 V .................................. Sect Fig. 2.
At ca. t."....turn above aQc
COLLECTOA·TO-EMITrER and VCE above 75 V •..••••••..•••.••..••••••.•••••• S.. Figs. 1.2.
BREAKDOWN VOLTAGE:
TEMPERATURE RANGE: t2C5-2'Bl'
With bI.. open. VCBRICEO ................................................ 400 V
Storage. Openlting (Junction) .......••.•.••.•....••..•....• -66 to +200 OC
EMITTER·TO·BASE
VOLTAGE. VE80 •... " .....................................,.................. 6 V
PIN TEMPERATURE lOuring Soklerlngl: JEDEC TO-3
At distances ~ 1/32 in. (0.8 mm.
COLLECTOR CURRENT: from cese far 10 I max.................................................... 230 OC
Continuous, Ie .. " ..........................................".................... 7 A MOTE: CURRENT DERATING AT CONST ... NT
YOLTAGE APPLIES ONLY TO THE DISSIPATlON-
Peak ..................................................................................... 10 A ~ LIMITED PORTION ... ND THE IS/b-LIMITED
z
go ru~~S'F?:2~-g'=8rM~:...~~...Tr.:G ",REA
is:;: SPECIFIED V"'LUE FOR IC MAX.
=~i
i ~~wa
;c!E!;
100
iI ~~ ,.
~ ~."
~ I§~ '0
~ ~I
/l·u
Ie.? "
25 50 15 100 In ISO 115 200
CASE TEMPERATURE tTC1-·C
Fig. 7-Dirsipstion IIfId current dsmting ctUVIII.

......... .
... COL.LECTOrwii~MITTr
.iW2.,,
lTAGEjCYCEI'!Y
III.J;R
' •
.I 5
u'
CA~C 1~~TURE n~I
i~ Iii
00
r
2 60
I§=
;$ . , e:
'''g~
0:
§f I
I ~ ~ 3O~f
~.
~
i ['... ~ ~
i
. ... . . . ...
0.'
I ~ "
0
• 0
0.01 0.1 I 10
COLLECTOR CURRENT Cle 1-", 'tCI-I'on
Fig. 3- Typical dc beta characteri.tics.
CASE TtMPlERATUM: iTe ,.2!·C
•..
10 100
...
COLLECTOR - TO - EMITTER VOLTAGE CVCEI - V
,ICS-1I241
Fig.2-Maximum OfJII'Bting_.
I 2 , 4 ! 6 7
COLLECTOR-TO-EMITTER VOLTAGE 1Yctl-Y
Fig.4- Typical output charscteri.tic•.
374 _______________________________________________________________
RCA413
ELECTRICAL CHARACTERISTICS. Case Temperature ITCI ~ 250C Unlesi Otherwise Specified
Te.. Conditions
DC
DC De
Emitter
Characteristic Symbol Collector Currin, limit. Unit.
VOItI", IVI
0'_ IAI
Voltl",IVI
VeE VEa Vaf Ie la Min. Typ. MI•.
With base-emlue, Junction
rewrse-blased leEV DO 15 - 0.25 mA
With base·emltter Junction
reverse-biased & T C 1250 e leEV 300 -1.5 - - 0.5
Emitter-Cutoff Current lEBO 5 5.0 mA
hFE 5 10
Transfer Ratio 2.5"
Collector-la-Emitter Sustaining
Voltage VCEO!sus)b 0.1 JOOb V
With base open
Base to Emilier S,HuraflOfl Voltage VSE Isa" 1.0" 01 - 09 1.5 V

COIIp.Ctor-to-Emllter 5alur<lllon
Voltage VeE!sa!! 1.0" 01 02 0.8 V
Second·Bre'lkdown Collector Current
JWlth base fonJIJ':H(j·bld~ed) 'S, be 150 0.3 A
Puhe dWdtlon ~norHepetltlvfd h
Galn-BandwH1th Product fT 10 02 .- 2.5 MHz
SWitching Time O.l11Bll

Rise I, 1.0 0.35 -
-0.5I1B2)
O.l1IBll ~s
Storage ts 1.0
·-0.5I1B21
- 1.4 -
O.lI1Bl)
Fall If 1.0
-0.51182)
0.15 -
Thermal Reslstanc:e (Junctlon·to·Cas'!! R/IJC 10 5 - 1.4 °elW
a Pulsed, pulse duration ::;"350 ,us, duty factor;:: 2%, bCAUTION The sustaining voltage VCEOIsusl MUST NOT be measured on a curve tracer,
e IS b IS defmed as the current at which second breakdown occurs al a'SPeclfled collector voltage
With the emltter·base lunctlon forward·blased for tranSistor operation In the active reglon_._ _
PULSE DURATION !Ii 20 "'.

COl.LECTOR-TO·EMITTER VOLTAGE IVC£!"S V REPETITION RAT! '100 HI
CQLLECTOR-IUPPLV VOLTAGE 1VCC)'ZQOW
1
!! •
•
DC lETA "XC/III"IO, 11," -IIZI5
CAsr TEM"'ItATURE ITC'"ZS"C
;.
...0.5
I
;0,4
c ~j O.S
~ l
~
0.'
0.1
05 I 1.5 I Z ,
IASE·TO·EMITTER VOLTAGE {VBEI-v .tsS~"O?l1t1 COLLECTOR CURRENTIICI-A
Fig. 5- Tvpical transfer characteristics.
COLLECTOIt CUftItI"T II<:I-A ••CI....... .ICI-'I,,,,,
Fig.6- Typical saturation voltags charscteristic. . Fig. 1-· TypiC81 ,.11 tim.... collectrJ/'curront.
PULSE OURATION!Ii 20", I.'
REPETITION RAT£-'OO H,
1.5 COLLECTOR· SUPPLY VOLTAGE IVCC'· 200V
DC BETA· IC' lal"'O I 1a,- ·la2'5
I.'
CASE TEMPERATUREITC.-U"C
11.0
I
;" 0.8
0.' I:: 0.2

PULSE DURATION s 20 1'_
RiPITITION RATE "100 Hz
~~~~O~]~ ~U:'~~ I~L~~. ~,,¥~I,;200V
CASE TEMPERATURE ITcl- 215-c
I • l
COLLECTOR CURRENTIICI-A COL1.ECTOR CURRENT ncl-A
gats-II....
Fig.8- Tvpical rise time vs. collector current. Fig.9- Typical storage time vs. collector current.
____________________________________________________________________ 375
RCA423
Features:
Military, Industrial, and Commercial Equipment • Maximum safe..rea-of~oper.tion curve,
• Low saturation vol1a,,: VCE(sat) .0.8 V (max.)
RCA·423 is an epitaxial silicon "-p-" power transistor voltage values, the RCA·423 is especially suitable for use in • High voltage rating: VCEO('UI) • 326 V
utilizing a multipl.-emitter-site structure. This device inverters, deflection circuits, switching regulators, high· • High dissipation rating: PT'" 125 W
employs tho popular JEDEC TO-3 package_ voltage bridge amplifiers, ignition circuits, and other high·
Featuring high breakdown-voltage ratings and low saturation- voltage switching appl ieations.
MAXIMUM RATINGS. AbloIute·Msltimum ~Iues: BASE CURR~NT (Continuous), la ....................................... 2 A

COlLECTOR-TO-BASE TRANSISTOR OISSIPATION, ';T:
VOLTAGE. Veso ..............................·•· .......··· ...... ······........ 400 V At case temperatures up to 25 C
COLLECTOR·TO.£MITTER A;::=::r~Vu~·;~.. iipc.......................................... 126 W
SUSTAINING VOLTAGE:
.nd VCE .bove 75 V .................................. See FiO. 2.
With be.. open, VCEOIIUI.......................... " ...................... 325 V
At tale t8mpll'8tur.. move 26°C
COLLECTOR-TO-EMITTER and Vee.bave 75 V ................................ $ee Figs. 1 a 2.
BREAKDOWN VOLTAGE:
TEMPERATURE RANGE:
Withbillopen,VIBR)CEO ..•.••.•.... " .................................. 400 V S~ It O~ting (Junction) .......................... -66 to +200 DC JEDEC TO-3
EMITTER·TO·BASE PIN TEMPERATURE 'IDuring Solderingt:
VOLTAGE. VESO............................................................... 6 V At distances ~, /32 in. 10..8 mm)
COLLECTOR CURRENT:
from case for 105 max ........................................... ,... 230 OC
0
Continuous. IC .....................................................,.............. 7 A Ww
.~
Peak ..................................................................................... 10 A
~~
00
w>
~~
100
~~
".
15
:i'5~ '0
~w
~i
'" 50 75 100 12:!5 1!50 17!5 2:00
CASE TEMPERATURE ITCI-·C
tICS-it,"
Fig. , -Dinipation and current derating curves.
COLLECTQA lliMIT}R V:rAGE, IVCEI'!5V
.IW2.5, '~i
.O~
~
,,~~
CA~C ~~~~TURE
u' ,~
U·
1&.151.5 I
60: 2
"5u~
l~
e:
~~
0"
~~ I
~ f\ 30~~
:=
i~ 0.51- +---
,I
I J".,. ~ ~
, . ..I ,I . . .
0.1
II
I
COLLECTOR CURRENT lIe i-A
~
II
'2CS-I'025
"
10
Fig_3- Typical dc beta characteristics_
CASE TEMPlRATUMITC.·ZS·c
.$
10 100 •• ..
COLLECTOR - TO - EMITTER VOLTAGE (VCE) - V
UCS-1I241
Fig.2-MaJCimum operating arNI. L 8
I Z 1 .. S • 7
COLLEC'fOR-TO-EMITTtR VOLTAGE IVCEI-V
,".·1.011
FigA- Typical output characteristics_
376 __________________________________________________________________
RCA423
ELECTRICAL CHARACTERISTICS, Ca.e Temperature (TCI = 2SoC Unles' Otherwise Specified
Test Conditions
DC
DC DC
Emitt.r
Charact.ristic Symbol Collector Current limits Units
or Base
Voltage (VI (AI
Voltage (VI
VCE Min. Typ. Max.
Collector·Cutoff Current
With base open ICED 300 0.25
With base-emlllet Junction
reverse· biased 300 15 025 mA
With base-emitter Junction
revers-e-blased & TC 125°C ICEV 300 1.5 0.5
Emiller-Cutoff Current lEBO 5.0 mA
DC Forward·Current 1.0" 30 90
Tr.Jnsfer Rdtl() 2.5 8 10
Collector to-Emitter Sustaining

Voltage 0.1 3Q(Jb v
With bdse opt:!!l
Bas!' to Emitter SdturallOIl Voltage VSE (sat) 01 0.9 1.5 V

Collector·lo·Emltler Saluldtlofl
Voltage l.oa 01 0.2 08 V
Second Bre,lkdown Collector Curren!
JWllh base JarVI/did bldsedJ 150 0.3 A
Puhe dUld.llon lnon·rt-!pellllvpJ 1~
10 0.2 2.5 MHI
SWitching Time
O.IIIBll
Rise 1.0 0.35
-0.511821
Storage IS 10
O.II1Bll
0.511B21
1.4 "S
0.II1S11
FaH If 1.0 015
-0.51 1821
Thermal ReSistance (JunCllon-lo·Casel R'iJC 10 14
a Pulsed. pulse ~uratlon < 350 ~S. duty factor'" 2%. bCAUTION The sustaining voltage VCEOtsus) MUST NOT be measured on a curve tracer
C , -
IS b IS defined as the current at which second breakdown occurs at a speCified collector voltage
With the emltter·base Junction forward·blased for tranSistor operation In the active region.
COLLECTOFl-TO-EMITTER VOLTAGE 1Vc[l'5 V PUlSE DURATION S 20 "'.

REPETITION RATE 0100 HI
COL.LECTOR-SUPPLY VOLTAGE 'VCCI"ZOOY
i DC BETA oIC/IllolOI III" - I I Z /5
, CASE TEMPERATURE "C,oU"C
;. .
:\' ;'0.5
I
·~0.4
!j O.S
~
0.2
0.1
0.5 I 1.5 I • ,
BASE-TO-EMITTER VOLTAGE IVBE)-V COLLECTOR CURRENTIICI-A
COl. LECTOR CURRENT 11(1-1.
IIC'-1114.
Fig. 5- Typical transfer characteristics. Fig. 6- Typical saturation voltage characteristic. Fig. 7- Typical fall tims if8- collector cummt.
PULSE DURATION:II 20 ". 1.4

REPETITION RATE -100 HI
1.5 COLLECTOR- SUPPLY VOLTAGE IVCC" 200V 1.2
DC BETA. IC/ISI"'D; IBI" -Ie2'5
CASE TEMPERATUREITC'02!i"C
~ a.I 1.0
1
~"I.O ;- 0.8
~ ~
[: PULSE ~ATIOH S 20 ~
0.2 ~~~~~I~~~~~~~~.~~21/;200V
CASE TEMPERATURE ITel' 25"C
I , 4
COLLECTOR CURRENT! Ic 1- A 92C$·19U"I'
COLLEClOA CURRENT IIC I - A
Fig.8- Typical rise time vs. collector current. Fig.9- Typical storage time lIS_ collector current.
____________________________________________________________________ 377
POWERTRANSISTORS __________________________ ~ ___________________________________________________
RCA431
For Switching and Linear Applications in Festures:
Military. Industrial. and Commercial Equipment • Maximum lIfe..,..-ot operation curv••
• Low .....'.tion voltage: VCE(IIt)· 0.7 V (max.)
RCA-431 i. an epi",.iai silicon n·p·n power transistor voltage values, the RCA-431 is especially suitable for use in • High voltage reting: VCEOlou,) • 325 V
utilizing a multiple·emitter·site structure. This device inverters, deflection circuits, switching regulators, high·
employ. the popuiar JEOEC TO·3 peckage. voltage bridge amplifiers, Ignition circuits, and othar high· • High dinipetion rating: PT -125 W
Featuring high breakdown·voltage ratings and low saturation- voltage switching applications.
MAXIMUM RATINOI, AbIo/u,..,....imum v.,,,,,:

COLLECTOR·TO·BASE
VOLTAGE, Vcao ............................................................... 400 V
TRANSISTOR DISSIPATION, '!T:
At ca. tamperatures up to 26 C
COLLECTOR·TO.£MITTER
SUSTAINING VOLTAGE
A::::,:::r~vu;.~~.2i0c................................. ' ........ 126 W
With be.. open, VCEOlsul1 ....." .... ".".".............................. 325 V and VCE above 75 V .......... ; ...................... Se. Fig. 2.
COLLECTOR·TO·EMITTER At ca. temp....tur.. above 25 C
BREAKDOWN VOLTAGE: end VCE ebove 75 V ................................ Set t=i9l. 1 .. 2.
With bese~, V(BRICEO ............................................... , 400 V TEMPERATURE RANGE:
Storage" Operating {Junctionl ................................ -86 to +200 OC
EMITTER·TO·8ASE VOLTAGE. Veae ................... "........ 6 V
PIN TEMPERATURE (During Sakleringl:
COLLECTOR CURRENT:
At distencas ~ 1/3'2 in. (O.a mml
Continuous. Ie ................................................ ".................. A JEDEC TO-3
from case for 10 s max. ................................................. 230 OC
P..k ................................................................................. 10 A
BASE CURRENT IContlnuousl, IB ....................................... 2 A NOTE: CURRENT DERATING AT CONSTANT
VOL.TAGE APPL.IES ONLY TO THE DISSIPATION-
~ LIMITED PORTION AND THE lS/b-LIMITED
z PORTION OF MAXIMUM OPERATING ARU
2 Q CURVES(FIG.21. 00 NOT DERATE THE
~~;: SPECIFIED VALUE FOR lC MAX.
~l!ii
I=e ,00
•=~~
Ii!~
"
Q
.0
• ~ "
;: !i~ .0
~ ~i
Ii! • B
r.Y
..
25 50 15 100 125 150 115 200.
CASE TEMPERATURE tTcl--C
Fig. 1-Dil$;parion and current derating curllfll,
".• CDt.LECTOREMITTr VOrTAGE (VCE)- 'v

08
I~
1..2.•
u" "h
b~ CArfc ~~TU", ~~
I~ 2 60ri
"C
~g I.'
4'~~
Q~
Sl! I
~ ~ 50~!
; t-., ~ ~
i 0.'
. . .. " ... . ...
I>
0.01 0.1 I 10
COLLECTOR CURRENT tEc I-A laCI-I'021
Fig.3- Typlc.1 de bBtB cbBrsctttrl.t1c•.
100
..
COLLECTOR - TO - EMITTER VOLTAGE (VCE) - V
12CS-I'241
Fig.2-Maximum operating afHI.
I 2 3 4 5 • 1
COLLECTOR-TO-EMITTU VOLTAGE 1VeE1-V
HCI·lto. .
Fig.4- Typic.1 outpul charsctttrl.t1cs.
378 __________________________________________________________ ~---- __-

RCA431
ELECTRICAL CHARACTERISTICS, Case Temperature (T CI = 25°C Unless Otherwise Specified
Test Conditions
DC
DC DC
Emitter
Characteristic Symbol Collector Current limits Units
or Sase
Voltage IVI IAI
Voltage IVI
VCE VEa Vaf IC la Min. Typ. Max.

reverse-biased ICEV 300 ·15 - 0.25 rnA

reverse·blased & T C 125°C ICEV 300 -1.5 - - 0.5
Emltter·Cutoff Current lEBO 5 5.0 rnA
hFE 2,5 a
Transfer RatiO 5 10
CollectOr-TO-Emitter Sustalntng
Voltage VCEO(susl b 0.1 300 b V
With base open
Base-la-Emitter Saturation Voltage VSE ~satl 1,Oa 0.1 - 0.9 1.5 V

Collector to-Emitter SalUratlon
Voltage veE (sat) 1,Oa 01 0.2 08 V
Second-Breakdown Collector Current
JWlth base forward-biased) IS/be 150 0.3 A
Pulse durdtlon (non-repetitive) 1,
Gain-Bandwidth Product 'T 10 02 - 2.5 MHz
SWItching TIme 0.1 11611

RIse I, 1.0 0.35
-0.5 11621
0.1 11611
SlOrage I, 10
.~ 0.5 IIB21
- 14 "'
0.11161 1
Fall II 1.0 0.15
-0.51IR?1
Thermal Reslstanc:e (Junctlon-Io-Case) AIIJC 10 5 - 14 °C/W
a Pulsed. pulse duration ::;'350 j.JS. duty factor'" 2%. bCAUTION- The sustaining voltage VCEO(sus) MUST NOT be measured on a curve tracer
C tSib lS defined as the current al which second breakdown occurs al a specIfied collector voltage
With the emitter-base Junction forward·bfased for tranSistor operation In the active regIon.
COLLECTOR-lO-EMITTER VOLTAGE (Vce'5 V ~~~I=~f,\s.:r;t

COi..LECTOR-SUF'Pi•.'r VOLTAGE IVCC'-ZOO V
CASE TEMPE.-ATU.-EITclaZ5'"C
1al -- I lz
DC BETAIIIFE'-'
0.' I 1.5 2 ;, 4 5
BASE-lO-EMITTER VOLTAGE 1'''8EI-V USS.40?lAI COLLECTOR CU.... ENTt1cl-A
COl.LECTOR CURRENT IIc1-A
Fig. 5- Typical transfer characteristics.
Fig. 6- Saturation voltage vs. coflectorcurrent. Fig. 7- Typical fall· time characteristic.
PULSE DURATION S ZO pol

~~~~I~~:~~:ES.~~~z REPETITION RATE -100 ... ~
COLLECTOR·SUPPLY VOLTAGE IVCCI-ZOO V
COLLECTOR-SUPPL.Y VOLTAGE lVCc,0200 V
I1 8,-.1: 82
1.5 CASE TEMPERATURE ITC I- 25·C
•
CASE TEMP£RATUREITC,aZS-C
18,a- I82
t i 5 DC BETAlhFE)·'
..
I DC BETA IhFEI -5
I
"
.
if
~
~
~
~
~ !~
" 05 2
2 3 4 5 2.3 4 S 6
UCS-I't24S·
COLLECTOR CURRENTIICJ-A COLLfCTOR CURRENT t IcJ- A
Fig.9- Typical storage·time characteristic (with constant
Fig.8- Typical rise·time characteristic. forced gain).
379
POWERTRANSISTORS __________________________________________________________________________________
RCA8766 Series
10-Ampere N-P-N Monolithic Darlington Power Transistors
350, 400, 450 Volts, 150 Watts

Gain of 100 at 4, 6A
Features:
The RCA-8766 Series· are monolithic n-p-n The devices in the series differ primarily in
• Low leakage at high temperature
silicon Darlington transistors designed for voltage ratings and in the current at which
automotive electronic power applications_ the dc gain is specified. • High reverse second-breakdown capability
The pi-nu construction of these" devices pro- The RCA-8766 Series are supplied in the
vides good forward - and reverse second- JEDEC TO-3 hermetic steel package.
breakdown capability; their high gain makes Applications:
• Formerly RCA Dev. Nos. TA8766 Series.
it possible for them to be driven directly • Power switching
from integrated circuits. • Solenoid drivers
• Automotive Ignition

RCA8766 RCA87668 RCA8766D
RCA8766A RCA8766C RCAB766E
V CBO ' 350 400 450 V
VCER(sus)
RBE = 50n 350 400 450 V
c
'0
VeEO(sus) 350 400 450 V
V EBO ' 5 5 5 V
Ie· 10 10 10 A
ICM 15 15 15 A
lB' A
PT nc'·l7~"
Te,,;; 2soe 150 150 150 W JEDEC TO-3

Tc>25Oe - - - - derate linearly 1 - - - ·e/W
T stg • T J -65to+175 °e
TL
At distances ;;'1/8 in. (3.17 mm) from case
for 10 s max. 235 °e
- '0'. COLLECTOR-la-EMITTER VOLTAGE (VCE)-3 v

r-r-
·
'00
,
·
!
0
~ .if.
·2
~ f--t-...,
~
· 1\ "-
, i ·Y
:h.\~~.;...-
--
1,\
~
CASE-TEMPERATURE
i I\. CHANGE IllTC )·SO·C I!' ----
:: p:
. 'r-- r~
;;
\ ! 2
102
:~-:::-.
~ fJ·CJ ~
i I-- "
~
1\
"" \..
I ·./""
'0
. . ... . . .",. .
'0
'" "i~i·C
~ '00
. .!'tiC, ,
10 10
,
'0'
g
.0
2
0.1 2 .
I
COLLECTOR CURRENT {:IC!-A
2 . .. .0 I.
BASE-lO-EMITTER VOLTAGE (VeE I-V
Fig. 1 - Thermal-cycling rating chan for all types. Fig. 2 - Typical DC beta characteristics for all types. Fig. 3 - Typical input characteristics for all types.
380 _________________________________________________________________________
POWER TRANSISTORS
RCA8766 Series
ELECTRICAL CHARACTERISTICS, at Case Temperature (TCI 25"C unless otherwise specified

VOLTAGE CURRENT RCA8766 RCA8766S RCA8766C
Vdc Adc RCA8766A RCA8766C RCA8766E
VCE IC IS Min. Max. Min. Max. Min. Max.
ICER 350 - 1 - - - -
RBE = 50 n 400 - - - 1 - -
450 - - - - - 1 mA
TC = 150°C 350 - 10 - - - -
400 - - - 10 - -
450 - - - - - 10
lEBO
VBE = -5V 0 - 60 - 60 - 60 rnA
VCEO(sus) 0.2a 0 350 - 400 - 450 - V
hFE
RCA8766 3 sa 100 - - - - -
RCA8766A 3 4a 100 - - - - -
RCA8766B 3 sa - - 100 - - -
RCA8766C 3 4a - - 100 - - -
RCA8766D 3 6a - - - - 100 -
RCA8766E 3 4a - - - - 100 -
VBE
RCA8766 3 sa - 2.5 - - - -
RCA8766A 3 4a - 2.5 - - - -
RCA8766B 3 sa - - - 2.5 - - V
RCA8766C 3 4a - - .- 2.5 - -
RCA8766D 3 6a - - - - - 2.5
RCA8766E 3 4a - - - - - 2.5
VCE(sat)
RCA8766 sa 0.2a - 1.5 - - -
RCA8766A 4a 0.133a - 1.5 - - -
RCA8766B 6a 0.2a - -. - 1.5 -
RCA8766C 4a 0.133a - - - 1.5 - - V
RCA8766D sa 0.2a - - - - - 1.5
RCA"8766E 4a 0.133a - - - - - 1.5
All Types -sa O.sa - 2.5 - 2.5 - 2.5
VF 7a - 2 - 2 - 2 V
Ihfel
f = 1 MHz 5 1 10 - 10 - 10 -
ISlb
t = 1 s, nonrep. 30 5 - 5 - 5 - A
ROJC - 1 - 1 - 1 °CIW
a Pulsed: Pulse duration = 300 IlS, duty factor = 1.8%.
__________________________________________________________----__ ~1
RCA8766 Series
6 8
10 100
92CS-28542
COlLECT~-TO-EMITTER VOLTAGE (VcEI-V

'ltS-2804'
Fig. 5 - Tvpical transfer characteristics for Fig. 6 - Tvpical output characteristics for Fig. 7 - Tvpical output characteristics for
all types. all types. all types.
~2 ________________________________________________________________
RCP111, RCP113, RCP115, RCP117 Series

High-Voltage, Medium-Power Features:
• Thermal-cycling ratings
Silicon N-P-N Power Transistors • Maximum safe-area-of-operation cur-
ves
• High gain-bandwidth product:
For TV Video Output and Linear-Amplifier Applications
fr = 80 MHz typo
The Rep111-, RCPI13, RCPI15-, and output, and video output. They are also
RCPl17-series power transistors are dou- suitable for use in regulators, audio out-
C
ble-diffused, epitaxial-collector silicon put and amplifier circuits, and electro- (FLANGE)
n-p-n transistors with planar junctions static deflection in display circuits. The '--.,.,..1..,-_-,
t§= ~~=?W
and field-shield construction. These tran- devices are supplied in the JEDEC TO-
sistors are designed especially for TV 202AB VERSATAB molded plastic pack-
applications such as RGB output, chroma age.
TOP VIEW C B E
92C527528
JEDEC TO·202AB
MAXIMUM RATINGS,Absolute-Maximum Values: RCP111D RCP111C RCP111B RCP111A RCP115B RCP115

RCP113D RCP113C RCP113B RCP113A RCP117B RCP117
With base open VCEOlsus) 350 300 250 200 250 100 V
EMITTER-TO-BASE VOLTAGE". ........... VEBO 7 5 5 V
CONTINUOUS COLLECTOR CURRENT, IC 150 150 150 150 150 150 mA
CONTINUOUS BASE CURRENT IB 50 50 50 50 50 50 mA
TRA/I;SISTOR DISSIPATION: PT
At case temperatures up to 25°C. 6,25 6,25 6,25 6,25 6,25 6.25 W
At ambient temperatures up to 25°C. 1,56 1.56 1.56 1.56 1.56 1.56 W
For pulse operation. See Fig. 7
TEMPERATURE RANGE:
Storage & Operating (Junction) .. -6510150 °c
At distances ~ 1/16 in. (1.39 mm) from case for 105 max. 230 °c
4 PT (MA,)(.}'6.2!1W
2 COLLECTOR-TO- EMITTER VOlTAGE {VcEI- 20 v
,
• t
~ 1°8 I-~
;;
, §
~
:~ 4~~C4SE''''7'E:
• ,
~ "~""''''' .
"~~~
~~
'v \
.. . .
~ c GE"'4 t '.
1 ~,,- ••C c """'.c r--
g,~ '" "- "-
, , 100 -4 6 8 1000 2 -4 6 8 10 2 4 6 6 100 2
10
6 8 10 6 8 100
NUMBER OF THERMAL CYCLES (THOUSANDSi COLLECTOR CURRENT (IC)-mA COLLECTOR CURRENT (IC I - mA
Fig. 1 - Thermal-cycling rating chart Fig. 2 - Typical de beta characteristics Fig. 3 - Typical gain-bandwidth product
383

ELECTRICAL CHARACTERISTICS, At Case Temperature, TC = 25"C Unless Otherwise Specified

CHARACTERISTIC VOLTAGE CURRENT RCP111A RCP111B RCP111C RCP111D UNITS
Vde mAde RCP113A RCP113B RCP113C RCP113D
VCB VCE VBE IC IB MIN. ~AX. MIN MAX. MIN. MAX. MIN. MAX.
350 - - - - - - - 1
ICBO
300 - - - - - 1 - -
JJA
250 - - - 1 - - - -
200 - 1 - - - - - -
250 0 - - - - - - - 5
ICEO
200 0 - - - - - 5 - -
JJA
175 0 - - - 5 - - - -
150 0 - 5 - - - - - -
lEBO 6 0 - 10 - 10 - 10 - 10 /.l.A
hFE 10 25a 50 300 50 300 50 300 50 300
RCP111 Series 10 1a 25 - 25 - 25 - 25 -
RCP113 Series 10 25a 30 150 30 150 30 150 30 150
10 1" 15 - 15 - 15 - 15 -
VCEO(sus)b 20" 0 200 - 250 - 300 - 350 - V
VBE 10 25 a - 0.8 - 0.8 - 0.8 - 0.8 V
V(BR)EBO 0 7 - 7 - 7 - 7 - V
OE=1mA)
VCE(sat) 25 a 2.5 - 1 - 1 - 1 - 1 V
ihfel
(t = 20 MHz)
20 15 4r p ,) tt vP .) i hvp.) ytvp.l
fT 20 15 80 (typ.l 80 (typ.) 80 (tyP.) 80 (tyP.) MHz
ISlb 100 100 - 100 - 100 - 100 - rnA

(t = 0.05 s)
Ccb 20 25 - 2.25 - 2.25 - 2.25 - 2.25 pF
OE = 0)
ROJC - 20 - 20 - 20 - 20
°C/W
ROJA - 80 - 80 - 80 - 80
a Pulsed, pulse duration = 300 /JS. duty factor"'; 2%.

b CAUTION: Sustaining Voltage, VCEO(SUS), MUST NOT be measured on a curve tracer.
2.4 COLLECTOR-TO-EMITTER VOLTAGE (VCE) =10 v ;T'0:~:

2.2 ." ........... ..
2 •••• <II~HI· ....... .
I 0.2 04 0,6 O.B I 1.2

BASE-lO-EMITTER VOLTAGE (VBEI-V COLLECTOR-lO-EMITTER VOLTAGE (VCEI-V
Fig. 4 - Typical input characteristics Fig. 5 - Typical transfer characteristics Fig. 6 - Typical output characteristics
384 __________________________________________________________________
POWER TRANSISTORS

E lECTR ICAl CHARACTE R ISTICS, A t Case Temperature, TC = 25°C Unless Otherwise Specified

Vde mAde RCP115 RCP115B RCP117 RCP117B UNITS
VCB VCE VBE IC IB MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
250 - - - 50 - - - 50
ICBO JJ.A
100 - 50 - - - 50 - -
ICEO
175 0 - - - 100 - - - 100
JJ.A
70 0 - 100 - - - 100 - -
10 258 50 - 50 - 20 - 20 -
hFE
10 18 10 - 10 - 10 - 10 -
VCEO(sus)b 208 0 100 - 250 - 100 - 250 - V
VBE 10 25 8 - 1.5 - 1.5 - 1.5 - 1.5 V
V(BR)EBO 0 5 - 5 - 5 - 5 - V
liE = 1 mAl
Vce(sat) 258 5 - 2 - 2 - 2 - 2 V
Ihfel 20 15 4 (tyP.) 4 (Yp.) 4 (yp.) 4 (typ.)
(f = 20 MHz) I I
fT 20 15 80 hyp.) BO (typ,) 80 (typ.) 80 (tyP.) MHz
IS/b 75 130 - 130 - 130 - 130 - mA

(t = 0.05 sl
Ccb 20 25 - 2.25 - 2.25 - 2.25 - 2.25 pF
lie =01
R9JC - 20 - 20 - 20 - 20
°C/W
R9JA -. 80 - 80 - 80 - 80
a Pulsed. pulse duration =3ooJJ.s, duty factor ";;;2%.

b CAUTION: Sustaining voltage. Vceo(susl, MUST NOT be measured on 8 curve tracer.
,. CAS[ TEMPERATURE ITcl .25·C
·
· II
-.......... r--."",,,J, I.
r r--
II
M
· E'-'oc,..~
......... ~I
I'---
~
~
·
,
I
. . .. . . .. 10
IWIE-TO-£MITTER VOLTAGE IV.' REVEME-aIASED-
tOO
v
.200
12CS-24111RI
Fig. 8 - Typical junction capacitance vs.

reverse-bias base-to-emitter voltage.
COLLECTOR-TO-EMITTER VOLTAGE (VCE ) -v 92CS·24'02R'
Fig. 7 - Maximum operating areas for al/ types.
385
POWER TRANSISTORS

High-Voltage, Medium-Power Silicon N-P-N Power Transistors
For TV Video Output, Horizontal Driver, and Linear-Amplifier Applications Features:
The RCP131-, RCP133-, RCP135-, and zontal driver, chroma output, and video out- • Maximum safe-area-of:operation
RCP137-series devices are double-diffused, put. They are also suitable for use in regula- curves
epitaxial-collector silicon n-p-n power tran- tors, audio output and amplifier circuits, and • High gain-bandwidth product:
sistors with planar junctions and field-shield electrostatic deflection in display circuits.
construction. These transistors are designed The devices are supplied in the VERSATAB fT = 30 MHz min.
especially for TV applicatIons such as hori- JEDEC TO-202AB, plastic package.
MAXIMUM RATINGS, Absolute-Maximum Values: c
RCP131A RCP131B (FLANGE)
RCP131C RCP1310 RCPl36 RCPl35B
~tL .IY~
RCP133A RCP133B RCP133C RCP133.D RCP137 RCP137B
VeEO(sus). ................ 200 250 300 360 100 250 V
V ESO .................... 5 5 V TOPVIEW L~
Ie . . . . . . . . .. . . . . .. . . . . . . . 1 1 1 A
IS ....................... 0.5 0.5 0.5 0.5 0.5 0.5 A
PT :
92CS " ' " JEDEC TO-202AB C B E
Te '" 25 0
e ............ 10 10 10 10 10 10 W
TA '"
25 0 e ............ 1.75 1.75 1.75 1.75 1.75 1.75 W
For pulse operation ....... See Fig. 1
. T stg ' T J .................. -66 to 150 °e
TL:
Duril')9 soldering at distance
;;;. 1/16 in. (l.39mm)
from case for 105 max. .... 230 °e
- .::.: ~-~_..••:..
.....~-::: 77:<
- ....
~..........
50 75 100 125 150 175 200

CASE TEMPERATUREtTcl-OC
Fig. 2-Dissipation derating curve at case

temperature for all types.
.E
I
"0
!:!
I-
Z
"':::>
0:
0:
u
o ~ 00 ~ 00 ~ ~ ~ ~
AMBIENT TEMPERATURE (TA)--C
g
[;l Fig. 3-Dissipation derating curve at ambient
...J temperature for all types .
5u 20
CO~LECTOR-TO-EMITTER VOLTAGE (VCEI-V

92CS-27120
... ',0& .. • 10'
Fig. 7-Maximum operating areas for all types. NU.... " OF THERMAl. CYCLES
ttCS-2.'''',
Fig. 4- Thermal.aycling rating chart for
all types.
386 __________________________________________________________________
POWER TRANSISTORS

~""';
COLLECTOR-TO-E"TTER
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C VOLTAGE; (YeE)-IOV
4
TEST CONDlTltiNS LIMITS
.."~ , 1 ---
CHARACTERISTIC
VOLTAGE
Vde
RCP131A
RCP133A
CURRENT RCP131C
mAde RCP133C
RCP131B
RCP133B
RCP131D
RCP133D
UNITS
r
~
,
6
"
,~~~'"'t~ --
,",-C
;t"",E.\1C'·"
'(-'c
'-
\~
"
RCP135
RCP137
RCP135B
RCP137B ~ ,• 10
.... _- -
ICBO (IE - 0)
VCB VCE V BE IC IB Min. Max. Min. Max.
I , , .. ,
H I
4 -- -
,
r-
,
--
.. ,
--- ---
-- --
RCP131A, RCP133A 200 - 5 - - QOI I

.68
10 100
2 '68
1000
RCP131B, RCP133B 250 - - - 5 COLLECTOR CURRENT tlcl-mA
RCP131C, RCP133C 300 - 5 - - J1A
RCP131 D, RCP133D 350 - - - 5 Fig. 5 - Typical dc beta characteristics
RCP135, RCP137 100 - 50 - - for all types.
RCP135B, RCP137B 250 - - - 50
60 COLLECTOR TO-EMITTER VOLTAGE (VCE).20V
ICEO 50 CASE TEMPERATURE (TC~·C
RCP131A, RCP133A 150 0 - 10 - -
- - -
RCP131 B, RCP133B
RCP131C, RCP133C
175
200
0
0 - 10 -
10
- J.lA
4 I
RCP131D, RCP133D 250 0 - - - 10
RCP135, RCP137 50 0 - 100 - - 30 \
-
RCP135B, RCP137B
lEBO
125 0 - - 100
2 \
(RCP131, RCP133-series only)
hFE
-6 0 - 10 - 10 J1A
I / \
RCP131-series 10 50a 50 300 50 ' 300
RCP133-series 10 50a 30 150 30 150
0
, • 6' 10
2
100 • 6'
2 4 • ,
1000
RCP135-series 10 50 a 50 - 50 - COLLECTOR CURRENT (IC)-mA
RCP137-series 10 50a 20 - 20 -
VCEO(sus) Fig. 6 - Typical gain-bandwidth product
RCP131 A, RCP133A 20 a 0 200b - - - for all types.
RCP131B, RCP133B 20 a 0 - - 250 b -
RCP131C, RCP133C 20 a 0 300 b - - - V
RCP131 D, RCP133D 20 a 0 - - 350 b -
RCP135, RCP137 20 a 0 100b - - -:-
RCP135B, RCP137B 20 a 0 - - 250 b - :;;;~ '-D:iil~ ,~,~
VBE - _~~SJ~
RCPI31, RCP133-series 10 50a - 1 - 1
V ,,;,; ,-"" ',''',
RCP135, RCP137-series 10 50a - 1.5 - 1.5 ~,
V(BR)EBO (IE = 1 mAl T

RCPI31, RCPl33-series 0 7 - 7 - V
-,',',
RCPI35, RCP137-series 0 5 - 5 -
VCE(sat)
RCP131, RCP133-series 50a - 1 - 1
V
RCP135, RCP137-series 50 a 5 - 5 - 5 80 100
COLLECTOR-TO-EMITTER VOl.TAGE (Va;)-V
Ihlel (I = 3 MHz) 20 20 10 - 10 - ,21.5-4.00
IT 20 20 30 30 MHz Fig. 7" Typical output characteristics

IS/b (t-O.4s) 100 100 - 100 - mA for all types,
Cob (I - 1 MHz) 20 - 8 - 8 pF
ROJC - 12_5 - 12.5 ''''''-TAGElV, 1-10V
°CM
ROJA - 71.4 - 71.4
a Pulsed, pulse duration = 300 }J.S, duty factor ~ 2%.

b CAUTION: Sustaining voltage. VCEO(susl, MU~T NOT be measured on a curve tracer.
8ASE- TO- EMITTER VOLTAGE (VsEl-V
Fig, 8 - Typical transfer characteristics

for all types.
387
POWER TRANSISTORS

General-Purpose, Medium- Power Features
• Maximum safe-area-of-operation
Silicon N-P-N and P-N-P Planar Transistors curves specified for dc operation
• Planar construction for low
noise and low leakage
The RCA-RCP700-, RCP702-, RCP704-, and cations such as complementary vertical de-
RCP706-series power transistors are double- flection, TV sound output, regulators, and • High gain at high current
diffused, epitaxial-planar silicon p-n-p tran- driver and output stages of audio amplifiers_
• Fast switching time
sistors_ The RCA-RCP701-, RCP703-, RCP The RCP700-, RCP702-, RCP704-, and
705-, and RCP707-series power transistors • Thermal-cycling ratings
RCP706-series types are p-n-p complements
are double-diffused, epitaxial-planar silicon of the n-p-n de'vices in the RCP701 , RCP703, • Types in RCP700, RCP702,
n-p-n transistors_ RCP705, and RCP707 series. RCP704, and RCP706 series are
All of these devices are intended for a wide p-n-p complements of n-p-n
These are supplied in the JEDEC TO-202AB
variety of I~rge-signal, general-purpose appli- types in RCP701, RCP703,
molded plastic package.
RCP705, and RCP707 series
RCP700D RCP700C RCP700B RCP700A RCP704B RCP704·
RCP702D RCP702C RCP702B RCP702A RCP706B RC1-706. TERMINAL DESIGNATIONS
RCP70ID RCP70lC RCP70IB RCP70IA RCP705B RCP705
C
RCP703D RCP703C RCP703B RCP703A RCP707B RCP707 IFLANGE)
VCBO ................... . 125 105 85 55 85 45 v
~& IYr4f
VCEO(sus) ............... . 100 80 60 40 60 30 V
VEBO ................... . 5 - - - - - -__ V
IC .... '" ........•...... : 2 A
IB ............... _ ...... . A
PT : TOP VIEW
TC .;; 25°C ........... . C B E
10 - - - - - - - - _ W
TC > 25°C ........... . - - - - - - - Derate linearly 0_08 W/oc - - - - - - 92C5 2752B
TA .;; 25°C ........... . 1.75 - - - - - - - _ W JEDEC TO·202AB

TA >25°C ........... . - - - - - - - Derate linearly 0.014 w/oe - - - - - -
Tstg ' TJ ................. . -65 to 150 - - - - - - - -
TL
At distance 1/8 in.(3.17 mml
from case for 10 s max ....• ----------------2~--------------
• For p-n-p dev~ces, voltage and current values are negative.
ELECTRICAL CHARACTERISTIcs. At eo.. T""".,.lUrelTc/- 26"C
RCP700 ond RCP702 Soria P-N-P T'....
lEST CONDITIONS LIMITS
-.
CHARAC-
YOLTAGE CURRENT RCI'71IOA ACP700B ACP700c ACP700D
lERIBTlC UNITS
Yd. Ade ACP702A ACP702B ACP702C ACP702D
SYMBOL
Yea yCE yBE IC I. Min. 1-' Min. Min. Mo .. Min. Mo..
ICBO -50 -0.5 -0.5
IE-o -70 - - - -0.5 - - - -0.5
-30 0 100 100
ICEO -45 0 - - - -100 - - - -100
pA
-65 1.5 100 100
ICEV -86 1.5 - - - -100 - - - -100
lEBO 5 0 - -100 100 100 - 100 50 75 100 125 150 175 200 225
-.-.
CASE TEMPERATURE (TC 1 - DC
hFE
RCP700 series .-0.51' 50 250 50 250 50 250 50 250
RCP702 series -o.6a 30 150 30 150 30 150 30 150
Bothseria, -4 I' 10 10 - 10 10 Fig_ 1 - Dissipation derating curve
VCEOCsusl b -0.1' 0 -40 60 80 100 V for all types_
VSElsotl
VSE
VCElsatl
-. -0.5' -0.05
-o.Sa
-0.68 -0.05
- -1.2
1.1
0.8
- -1.2
1.1
-0.8
- -1.2
1.1
-0.8
- -1.2
1.1
-0.8
V
V
V 20 I I III
Ihlel -4 -0.05 - ·5 - 5 - 5 - •I 10 - ; TJ MAX."150·C
-.
5 --
f=10MHz
'r')(
IT -0.05 50 50 50 50 MHz
~ '~~••,IU
ISib
'~~r'~
Q
, "m:~
With base -35 -285 - - - -150 - -150 - mA
11
forw..d biased --50 - - -150 - ~ -t4~
~
c"i.o -10 20 40 20 .0 20 40 20 40 pF
" '-
'''1 MHz
'ON
!Veel
-30
0.5
18,=-0.05 -
1~=O.05
100 - 100 - 100 - 100
~
~ ,, 1\ 1\ [\ _""'-.!5·C,
,o·c '.,<).,.
r-.. 0 r--
I"
" -
'OFF
IVee)
-30 0.5
18,"-0.01
1~-o.05
- 1000 - 1000 - 1000 - 1000 0,'
.. ..
104
,
100·C wc 'j..
, 10!>
, ,
.lJ'-.,
106
, .
A6JC
A6JA
-
-
12.5
71.. -
12.5
71.'
-- 12·fi
71.4
-
-
12.5
71.4
·CIW
NUMBER OF TI1ERMAL CYCLES
Fig. 2 - Thermal-cycling rating chart

'Pullid. pul.dur.tion-300".. dutyfllCtar < 2%. bCAUTlON: SUstainingvolt..... VCEol.,... MUST NOT be rneasura:! on a curw tracer.
for all types_
~--------------------------------------------------------------
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS, At Case Temperature ITC) = 2!f'C
RCP704, RCP705, RCP706, RCP.707 Serie. N·P·N and P·N·P Type.
RCP704 and ReP7D6 Series ReP70S and RCP707 Series
TEST C.ONOITIONS. LIMITS
CHARAC·
VOLTAGE CURRENT RCP704 RCP104B RCP106 RCP1058
TERISTIC UNITS
Vd. Ad. RCP706 RCP706B ReP7O? RCP707B
SYMBOL
IS Min. Max. Min. Max. Min. Max. Min. Max.
leBO -40 -5
'e=O -70 -5
-22 1000 1000
ICEO -45 - -tODD - 1000
-45 -1.5 - -1000 1000 -
ICEV -85 -1.5 - -1000 - 1000
2488 2468 2 .. 68 2 .. 68 2 .. 68
-5 -100 - -100 - 100 - 100 I .0 lOa 1000 10000
COLLECTOR CURRENT IICI-mA
hFE
RCP704 RCP705 series -4 -OSa 50 50 50 50
- 4 -a.Sa 92C5_2<4217
ACP706 RCP707 series 20 20 20 20
VCEO(susl b _O.la -30 -60 30 60 v Fig. 3· Typical static beta characteristics
VSE{satl osa -0.05 1.6 -1.6 1.6 1.6 v for RCP701, RCP703, RCP705,
- 4 -u .• ' 1.. 1.. 1.5 1.5 v RCP707'series types.
VCE(satl -o.sa - 0.05 1.2 1.2 1.2 1.2 v
Ih,.1 _4 -0,05
'00 4 COLLECTOR -TO-EMITTER VOLTAGE IVCE) '-4 V
r- t---
f=10MHz
-4 -0.05 50 50 50 50 Q , IUfTIU
~
'Sib
J.lL'RE (TA' ,!L
With base
forward biased
Cobo
-.10
-20
-50
-500
20 40
-200
20 40
500
25
120
25
mA
pF
r. , A.LJ
,
-40"C
25"C-
i
f=l MHz
(Yee l 18,"'-0,05 _
tON
-'10
0.5
182=0.05
100 100 80 80 , r- t--- -- ~
~ f=
~
IVee l ~
1000 800 800 ~ 10
, r---
... , ... , .
-30
g
12.5 12.5 12.5 12.5
aC/W
.', , " 1000 ,
71.4 71.4 71.4 10 100 4000
71.4 COLLECTOR CURRENT tIcl - mA
Fig. 4· Typical static beta characteristics

for RCP700, RCP702, RCP704,
ELECTRICAL CHARACTERISTICS, At C... Temp.,aturtl fTC) - 2fPc
RCP706'series types.
RCP701 and RCP703 Serie.; IIj·P·N Types
CHARAC-
VOLTAGE CURRENt' RCP7D1A RCP701B RCP701C RCP701D
TERISTIC UNITS
Vd. Ad. RCP703A RCP703B RCP703C RCP703D
SYMBOL
Min. Max. Min. Max. Min. Max. Min. Max.
ICBO 50 0.5 - 0.5

IE=O 70 0.5 0.5
30 100 - 100
'CEO 45 100 - 100
55 -1.5 100 - 100
B5 -1.5 100 - 100
lEBO -5 100 - 100- 100 100
hFE
RCP701 series 0.5 8 50 250 50 250 50 250 50 250
RCP703 seroies 0.5a 30 150 30 150 30 150 30 150
COI..LECTOR CURRENT (Icl - A
Both series 18 10 10 10 10
.ICS-14'ltl ~ ,~
VCEO(sus)b O.la 40 60· - BO 100 v Fig. 5· Typical saturation·voltage charac·
VBE(sat) O.sa 0.05 1.2 1.2 1.2 1.2 v teristics for RCP700, RCP702,
0.58 1.1 1.1 1.1 1.1 v RCP704, RCP706'series types,
VCE(sat) O.sa 0.05 O.S O.S 0.8 0.8 v
Ihf.1 0.05 'i"
f=10MHz .;;::
fT 0.05 50 50 50 50 MHz
igil"
With base 20 500 200 200 mA L
forward bi8Sed 50 200
Cabo 10 20 20 20 20 pF
,hFE"O i iii'l':i:
f=1 MHz
IVee l 0.5 19 1- 0.05 BO BO BO BO
tON
30 182"'-0.06
IVec l
:""
'i:::!'
30 BOO - BOIl BOIl BOO
;;;L
12.5 12.5 12.5 12.5
OCIW
71.4 71.4 71.4 71.4 0.0
COl.LECTOR CURRENT IICI -A 92C5.I<4Ie
a Pulsed. pulse duration = 300 loiS. duty factor " 2%. • For p.n-p davlees, voltage and eurrent values are negative. Fig. 6· Typical saturation·voltage charac·
b CAUnON: Sustaining voltaga. VCEOI • .IS). MUST NOT be measured on a eurve tracer.
teristics for RCP701, RCP703,
RCP705, RCP707·series types.
389
I
I
I

-" ••• !!' iii!
-, .. Iii:! :t;: I ,. ,
,
«
I
••• 1
(i.
j. :l i
,
i
H····.
I U
I
I,i I
I l'li?: i ! I
JU 4--I'J":/I ' j~
I··'ff
". I""' I
~:iillli: 1.1
I 1111' IliillJ.jffllf
····lillJ 1ll,J Iillilll ,
BASE-TO-EMtTTER VOLTAGE (VSE} - V
Fig. 8 M Typical transfer characteristics for

RCP700, RCP702, RCP704,
RCP706-series types.
-0.042
COLLECTOR-lO-EMITTER VOLTAGE (VCE) - V

92C$-2"1187R2
Fig. 7 - Maximum operating areas for RCP700-series and RCP702-series types.
,
COLLECTOR-TQ-EMITTER VOLTAGE {VeE)- v
Fig_ 9 - Typical output characteristics for

RCP700, RCP702, RCP704,
RCP706-series types.
BASE-lO-EMITTER VOLTAGE (VeE) - v

RCP700, RCP702, RCP704,
COLLECTOR-TO-EM1TTER VOLTAGE (VCE)-V
92CS-24190RI
RCP706·series types.
Fig. 10· Maximum operating areas for RCP704-series and RCP706-series types.
390 ________________________________________________________________
POWER TRANSISTORS

BASE-lO-EMITTER VOLTAGE (VeE) - y

RCPlOl, RCPl03, RCPl05,
RCP70l-series types.
COLLECTOR-TO-EMITTER VOLTAGE IVCE)-V
92CS-24218R2
Fig. 12· Maximum operating areas for RCPlOl-series and RCPl03'series types.
COLLECTOR-lO-EMITTER VOLTAGE (VCEI-Y

RCPlOl-series types.
...z "
i:! 4 10
~ D.333
.
I
~
I •
~
~
o 0.1
o 0.0838
....t:!
5
~
.
4
~ .....
BASE-lO-EMITTER VOLTAGE 1'/8El-1I

92CS-24219
RCP70l·series types.
Fig. 15· Maximum operating areas for RCPl05-series and RCPlOl-series types.
____________________________________________________________________ 391
POWERTRANSISTORS __ ~ _______________________________________________________________________
RCS683,RCS683A,RCS683B
Features:
4-Ampere Monolithic N-P-N - Operates from 1C without predriver
- Low leakage at high umperature
Darlington Power Transistors - High reverse second-breakdown capability
40-60-80 Volts, 10 Watts Applications:
Gain of 1000 at 2 A - Power switching - Audio amplifiers
- Hammer drivers
- Series and shunt regulators
The RCS683, RCS683A, and RCS683B e are

monolithic n-p-n silicon Darlington transis-
tors designed for low- and medium-frequency
,------------,
I I TERMINAL DESIGNATIONS
power applications_ The double epitaxial I I
construction of these devices provides good I I
,f3,,~~
forward and reverse second-breakdown capa- I I
bility; their high gain makes it possible for I
them to be driven directly from integrated I
circuits; and their small package (TO-39) IL _ _ _ _ _ _ _ _ _ -lI
permits compact design_
92CS-27512
e Formerly RCA Dev. Nos. TA8698C, E
92C$-20f,.fl2
TA8698B, and TA8698A, respectively. JEDEC TO-39
Fig. 1 - Schemstlc diagram for al/ type••
RCS683 RCS683A RCS6838
VCBO •..••..•.•.•••.•..•...••. 40 SO SO V
VCERlsusl
R BE =,l00n ...•..•.•.•••.••... 40 SO BO V
VCEOlsusl ••• , • . • • • . . . • . . • . . • • . • . 40 SO BO V
VCEX
V BE =-1.5V,R BB =100n •..•..••.•• 40 SO BO V
CASE T£MPt:RATUftE iTcl-·C
V EBO ••...•.•.••••.••..•••...• 5 V
'C .......................... . 4 A FIg. 2 - Derating curve.
'CM •.••.••..••••••.••••.••.••. 6 A
'B .......................... . A
..t ..
0.1
PT "'= COLLECTOR -TO-EMITTER
-
VOLT""VCEI"~
~#~"fl - '"
TC" 25°C •••••••••.••••.••.••• 10 W '\
T stg
TC>25°C .•.••••••.•.••.••.•••
••.••.••..•.•.•••.•.••••.••
darate linearly at 0.08
-6510 +200
WrC
"C ~"
Ii
, /' ~. \
-6510 +150 _ _ _ "C
H~'"
TJ .......................... .
~~ ~.~~
(.~~i7 ~. .
TL
At distances;" 1/32 in. 10.8 mml ~~
~~ .: f:I~. \.
\
! ,~
"C
.,.
0.1
, . .. I
COLLECTQR CURRENT C1C)-A
, . .. 10
Fig. 4 - Typical DC bela characterirrics.
nCM-leD.I
Fig. 3 - Maximum _rating a-. Fig. 5 - Typical transfer characteristics.
392
______________________________________________________________________________ POWER TRANSISTORS
RCS683, RCS683A, RCS683B

ELECTRICAL CHARACTERISTICS, AtCase Temperature (TcJ = 2!t'c
RCS683 RCS683A RCS683B UNITS
TERISTIC Vdc Adc
SYMBOL
VCE VSE IC Is MIN. MAX. MIN. MAX. MIN. MAX.
40
60
0
0
-- 1
-
-
-
-
1
-
-
-
-
'CEO
80 0 - - - - - 1
40 -1.5 - 0.15 -- 0.15
- - - I
COLLECTOR ·TO-EMITTER SATURATION VOLTAGE VCE ISATI]- v
.... -- -
'CEV 60 -1.5 - -
80 -1.5 - - - 0.15 Fig. 6 - Typical saturation characteristics.
mA
TC= 125°C
40
60
-1.5
-1.5
-
-
1.5
-
-- 1.5
- -- -
-
80 -1.5 - - -. - - 1.5
'EBO -5 0 - 2 - 2 - 2
VCEO(sus) 0.18 0 40 - 60 - 80 - V
hFE 3
3
28
48
1000
200
-
-
1000
200
-
-
000
200
-
-
VBE
3 2" - 2.4 - 2.4 - 2.4
3 4" - 4 - 4 - 4
VCE(sat) 28 0.004 - 1.6 - 1.6 - 1.6

4" 0.04 - 2.8 - 2.8 - 2.8
V
VF -4 - 3 - 3 - 3
Ihfe l COLLECTOR CURRENT (Ie) - A
f= 1 MHz 5 1 20 - 20 - 20 -
Fig. 7 - Typical saturated switching time charac-
Cobo VCB
=10 'CO - 60 - 60 - 60 pF teristic$.
ES/bb
L=12mH, -1.5 30 - 30 - 30 - mJ
RBE=100n
'Sib 35 0.28 - - - - -
t = 0.5 s 55 - - 0.17 - - - A
non rep. 75 - - - - 0.11 -
ROJC - 12.5 - 12.5 - 12.5 °C/W
• Pulsed: Pulse duration = 300 Its, duty factor = 2%.
b ES/b is defined as the energy at which second breakdown occurs under specified reverse bias
conditions.
ES/b = 112U 2 where L is a series load or leakage inductance, and' is the peak collector
current.
393
POWERTRANSISTORS ____________________________________________________________________________- -
TIP29, RCA29, RCS29 Series
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors

For Power-Amplifier and High-Speed-Switching Applications
They differ from each other in voltage rat-

Features:
The RCA-TI P29, RCA29 and RCS29-series
are epitaxial-base, silicon n-p-n transistors ings. • 30 W at 25°C case temperature
intended for a wide variety of switching and The TI P29 and RCA29-series are supplied in • 3 A rated collector current
amplifier applications, such as series and the JEDEC TO-220AB straight-lead version • Min_ fT of 3 MHz at 10 V, 200 mA
shunt regulators and driver and output stages of the VERSAWATT package, and can be • Designed for complementary use with
of high-fidelity amplifiers. These power tran- provided in formed-lead configurations upon
sistors are des'igned for complementary use request. The RCA29-series are supplied in the
TIP30, RCA30 and RCS30-series
with devices in the TI P30, RCA30 and JEDEC TO-213MA hermetic package. p-n-p types
RCS30-series.
TERMINAL CONNECTIONS
MAXIMUM RATINGS, Absolute-Maximum Values: c

TIP29 TIP29A TIP29B TlP29C (FLANGE I
VCSO'
V CEO '
RCA29
RCS29
40
40
RCA29A RCA29B RCA29C
RCS29A RCS29S RCS29C
60
60
80
80
100
100
V
V E
-,-
92.CS-27!!119
5 5 5 5 V
VESO'
5 5 5 5 A BOTTOM VIEW
IC'
18 . A JEDEC TO-220AB
TIP29 and RCA29-series
PT : .:: °
AtTC ",,25 C . . . . • . . . . . . • 30 30 30 30 W
AtTA"'250C . . . . . . . . . . . . 2 2 2 2 W
At T C >250 C TIP29 and RCA29-series Oeratelinearly 0.24 W/oC
RCS29-,eries . Derate linearly 0.17 W/oC
T 51g' T J TI P29 and RCA29-series. -65 to 150 °c
RCS29-,eries . . . . -65 to 200 °c
T L (During soldering):
At distance 1/8 in. (3.17 mm) from case for
10s max. TIP29 and RCA29-series . 235 °c
At a distance ~ 1/32 inch (0.8 mm) from seating
plane for 10s max.. . (RCS29-series) . 235 °c
JEDEC TO-213MA
RCA29-series
NOTE: CURRENT DERATING AT CONSTANT \IOLTAGE

APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION
OF MAXIMUI,l-OPERATING-AREA CURVES DO
NOT DERATE THE SflECIFIEO VALUE FOR IC MAX.
25 ~ 7~ 100 12~ 150 118 200

CASE TEMPERATURE ITC)-*(:
10 100
COLLECTOR-TO"'!"ITT! .. VOLTAG!(VCI)- V Fig_ 2 - Derating curve for TIP29-series
and RCA29-series_
Fig_ 1 - Maximum operating areas for TIP29-series_
394

ELECTRICAL CHARACTERISTICS, At Case Temperature fTC) = 2fiOC unless otherwise specified
TESTCOND. LIMITS
VOLT· CUR. TIP29 TIP29A TIP29B TIP29C
CHARAC- AGE RENT Units
RCA29 RCA29A RCA29B RCA29C
TERISTIC Vdc Adc RCS29 RCS29A RCS29B RCS29C
VCE IC Min. Max. Min. Max. Min. Max. Min. Max.
ICED 30 - 0.3 - 0.3 - - - -
16=0 60 - - - - - 0.3 - 0.3 rnA
40 - 0.2 - - - - - -
ICES 60 - - - 0.2 - - - - NUMBER Of' THERMAL CYCLES
rnA
VE6=0 80 - - - - - 0.2 - -
Fig. 3 - Thermal-cycling ratings for
100 - - - - - - - 0.2 TlP29 and RCA29-series.
IE60
0 - 1 - 1 - 1 - 1 rnA
V6E=-5V
VCEO(sus) illOO
0.03a 40b - 60 b - 80b - 100b - V 1 •
·,
16=0 .. -
4 0.28 40 - 40 - 40 - 40 - ~
hFE 4 18 15 150 15 150 15 150 15 150 ~,- f--- -
'~
~
la c
·• ,g.,,~~
4 - 1.3 - 1.3 - 1.3 - 1.3 V
V6E ~~ ","Pe-1i'4r-
VCE(sat) ~
16= 18 - 0.7 - 0.7 - 0.7 - 0.7 V :~~ >"c
~ ~ ~o
• (·'C) • ."
·c
. .
(.
0.125A 10
"~~ c .........
, , , , , , ,
hfe 10' 10'
f=l kHz
10 0.2 20 - 20 - 20 - 20 - NUMBER OF THERMAL CYCLES

Ihfel RCS29-series.
f=l MHz 10 0.2 3 - 3 - 3 - 3 -
tON
(td+ t ,)
VCC=
30V 1 ,0.4 (typ.) 0.4 (typ.) 0.4 (typ.) 0.4 (typ.)
RL =30n
161=162
=O.lA
J.1S
tOFF
(ts+tf)
VCC=
30V 1 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) ODI
COLLECTOR CURRENT IlC1-A
RL=30n
161=-162 Fig. 5 - Typical dc beta characteristics for
=O.lA TIP29, TlP29A, TIP298. RCA29.
RCA29A, RCA298; RCS29. RCS29A
TIP29 and
RCA29-series
- 4.17 - 4.17 - 4.17 - 4.17 and RCS298.
ROJC
RCS29-series - 5.83 - 5.83 - 5.83 - 5.83
°CIW
TIP29 and - 62.5 - 62.5 - 62.5 - 62.5
ROJA
RCA29-series
RCS29-series - 60 - 60 - - 60
a Pulsed, pulse duration = 300 JJS. duty factor ~ 2%.
b CAUTION: Sustaining voltage, VCEO(SUS), MUST NOTbe measured on a curve tracer.
0.01
. ~I
I
.
10

TlP29C. RCA29C and RCS29C.
395
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

Epitaxial-Base, Silicon P.;N-P VERSAWATT Transistors
The RCA-TIP30, RCA30 and RCS30-series They differ from each other in voltage rat-
are epitaxial-base, silicon p-n-p transistors ings_ Features:
intended for a wide variety of switching and The TIP30 and RCA30-series are supplied in • 30 W at 2SoC case temperature
amplifier applications, such as series and the JEDEC TO-220AB straight-lead version • 3 A rated collector current
shunt regulators and driver and output stages of the VERSAWATT package, and can be • Min_ fT ,of 3 MHz at -10 V. -200 mA
of high-fidelity amplifiers_ These power tran- provided in formed-lead configurations upon • Designed for complementary use with
sistors are designed for complementary use request_ The RCS30-series are supplied in the
with devices in the TI P29, RCA29 and TIP29. RCA29 and RCS29-series
JEDEC TO-213MA hermetic package_ n-p-n types
RCS29-series-

TIP TIP30A TIP30B TIP30C
RCA30 RCS30A RCA30B RCA30C
RCS30 RCS30A RCS30a RCS30C
VCBO '
VCEO '
-40
-40
-60
-60
-80
-80
-100
-100
V
V E
I
92CS-27519
VEBO' -5 -5 -5 -5 V
-5 -5 -5 -5 A BOTTOM VIEW
IC'
IB .. -1 -1 -1 -1 A JEDEC TO-220AB
PT : ° TIP30 and RCA30-series
At T C "'25 C 30 30 30 30 W
AtT A "'25°C . . . . . . . . . . . . 2 2 2 W
At TC >250 CITIP30 and RCA30-series) Derate linearly 0.24 wtc
RCS30~series Derate linearly 0.17 wtc
Tstg' TJ TI P30 and RCA30-series . -65 to 150 .oC
RCS3O-series . -65 to 200 °c
T L lOuring soldering):
At distance 1/8 in. (3.17 mm) from case for
lOs max. ITIP30.nd RCA30-series) 235 °c
At a distance ;;;.. t/32 inch (0.8 mm) from seating
plane for 10s max.. . (RCS3Q-series) . 235 °c
JEDEC TO-213MA
RCS30-series
NOTE: CURRENT OERATING AT CONSTANT VOLTAGE

APPL.IES ONLY TO THE DISSIPATK)N-L/MITED PORTION
OF MAXIMUM-OPERATING-AREA CURVES DO
NOT CERATE THE SPECIFIED VALUE FOR Ie MAX.
25 so 75 100 125 leo 17S 200

CASE TEMPERATURE ITCI-"C
Fig. 2 - Derating curve to TIP30 and

RCA3Q-series.
~I -10 -100
COLLECTOR-TO-EMITTE~ VOLTAGE (VCE)- V
Fig. 1 - Maximum operating areas for TIP3Q-series.
396 ________________________________________________________________

ELECTRICAL CHARACTERISTICS,ArCase Temperature fTC) = 25"C unless orherwise specified
TESTCOND. LIMITS
VOLT· CUR. TIP30 TIP30A TIP30B TIP30C
CHARAC· AGE RENT Units
ICEO -30 - -0.3 - -0.3 - - - -
IB=O -60 '. - - - - - -0.3 - -0.3 rnA
-40 - -0.2 - - - - - -
ICES -60 - - - -0.2 - - - - .. (; 8 to" 2 .. 6 8 1011
VEB=O rnA 10'
-SO - - - - - -0.2 - - NUMBER Of THERMAL CYCLES
-100 - - - - - - - -0.2
Fig. 3 - Thermal-cycling ratings for
·IEBO
0 - -1 - -1 - -1 - -1 rnA TlP30and RCA30·series.
VBE=5V
VCEO(sus)
IB=O
-0.03" -40b - -60b - -sob - -100b - V
iI: 100
~
hFE
-4
-4
-0.2a
-I"
40
15
-
150
40
15
-
150
40
15
-
150
40
15
-
150
~
.
8
-
i ,
VBE -4 -I" - -1.3 -1.3 - -1.3 - -1.3 V
VCE(s,t) ii t'-- C4s
IB= -I" - -0.7 - -0.7 - -0.7 - -0.7 V "

~
w 2 ~ t'-~ <!,f-4 rtl,ljle
-0.125A
~
hfe ~.~~~
.~~ 'c ~J.~.
. .. ."' ,
-10 -0.2 20 - 20 - 20 - 20 ~ "'~ (. c
f=1 kHz
Ihfel
10
10
,~IV ,
10
.. 10 0
,
f=1 MHz -10 -0.2 3 - 3 - 3 - 3 -
Fig. 4 - Thermal-cycling'rating chart for
tON
RCS30--series.
(td+ t,)
Vee= COLLECTOR-TO EMITTER
-30V
RL=30n
-1 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ,) 12 VOLTAGE (VCE'. = -4 V
IB1=-182
~ 400 CAS! Tu.JERJrJRLr: I J
=-O.IA
ffi
~ 200 r::t:::
tOFF
J1S ~ -pc
(ts+tf)
Vee=
~
:i eo
~ 60
a
100
-40·C
""
f'., \.\
I
,0
-30V -1 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.)
RL =30n
20
I,,\~
1\
IE\l=IB2
=-O.IA
TIP31 and - - - 4.17 -
g
10
-0.01
, 4 00
-0.1
, , 00 , , .. -10
4.17 4.17 4.17 COLLECTOfi CURRENT (Icl-A
RCA31-series
ROJe
RCS31-series - 5.83 - 5.83 - 5.83 - 5.83
TJP30, TIP30A, TlP30B, RCA30,
°C/W
TIP31 and - 62.5 - 62.5 - 62.5 - 62.5
RCA30A. RCA30B, RCS30A
and RCS30B.
RCA31-series
ROJA
RCS31-series - 60 - 60 - 60 - 60
a Pulsed, pulse duration'" 300 1JS. duty factor ~ 2%.
b CAUTION: Sustaining voltage, VCEO(SUS), MUST NOT be measured on a curve tracer.
•• 0 • • 0
-0·1 -I -10
COLLECTOR CURRENT !Ic1-A

TlP30C, RCA30C, and RCS30C.
397
~ERTRANS'STORS ________________________ ~ ________ ~ _____________________________________

The RCA-TIP31, RCA31 and RCS31-series They differ from each other in voltage rat· Features:
are epitaxial-base, silicon n-p-n transistors ings.
intended for a wide variety of switching and The TIP31 and RCS31-series are supplied in • 40 W at 25°C case temperature
amplifier applications, such as series and the JEDEC TO-220AB straight-lead version • 5 A rated collector current
shunt regulators and driver and output stages of the VERSAWATT package, and can be
of high-fidelity amplifiers. These power tran· • Min.fTof3MHzatl0V.500mA
provided in formed-lead configurations upon • Designed for complementary use with
sistors are designed for complementary use request. The RCS31-series are supplied in the
with devices in the TIP32, RCA32 and TIP32, RCA32 and RCS32-series
JEDEC TO-213MA hermetic package.
RCS32·seri es. p-n-p types
TIP31 TIP31A TIP31B TIP31C
(FlA«i.GE)
RCS31 RCS31A RCS31 B RCS31C
VCBO ' 40 60 80 100 V
VCEO '
VEBO'
40
5
60
5
80
5
100
5
V
V E
I
IC' 5 5 5 5 A 92CS-2.7519
lB' A
PT: BOTTOM VIEW
AtTC·~250C . . . . . . . . . . 40 40 40 40 W
AtTA ~250C· . . . . • . . . . . • . JEDEC TO-220AB
2 2 2 w
At T C > 250C(TIP31 and RCA31·,erie,) Derate linearly 0.32 W/"C
TIP3l and RCA3l-series
RCS31-series Derate linearly 0.23 wtc
T Sl9 - T J TIP31 and RCA31-serie,. -65 to 150 °c
RCS31-serie,. . . . -65 to·200 °c c
'0
T L (During ,older.ing):
At distance 118 in. (3.17 mm) from ea'e for
lOs max. (TIP31 and RCA31-serie,) . 235 °c
At a distance ~ 1132 inch (0.8 mm) from ,eating
plane for 105 max.. . (RCS31",eries) . 235 °c
Hel-t?ll'
JEDEC TO-2l3MA
ReS3l-saries
NOTE: CURRENT DERATING AT CONSTANT VOLTo\GE

APPLIES ONLY TO THE DISSIFIII.T1ON-LIMITEO PORTION
OF MAXIMUM-OPERATiNG-AREA CURVES 00
NOT IERATE THE SPECIFIED VALUE FOR IC MAX
COLLECTO"-TO-EMITTEfI VOLTAGE lVCE)- V 215 50 715 100 1215 1110 178 200
CASE TEMPeRA1l.RE (TCl-*C
HC:I-21121
Fig. 1 - Maximum operating areas for TIP31-series.

Fig. 2 - Derating curve for TIP31 and
RCA31-series.
398

ea. TemPBrBlIJrtI fTC) = 2!fOC un/ellS otherwise lI(JfICified
ELECTRICAL CHARACTERISTICS,At
TESTCOND.
VOLT· CUR. TJP31
LIMITS
TlP31B TlP31C ·
·
1
TJP31A z
.
o
CHARAC· AGE RENT Units
RCA31 RCA31A RCA31B RCA31C 5" 10
TERISTIC Vdc Adc RCS31 ~
RCS31A RCS31B RCS31C • ~--f+--~~rT~~~~----+--r-r1
VCE IC Min. Max. Min. Max. Min. Max. Min. Max. ~ 4~~~r-~-+~~~
ICEO 30 - 0.3 - 0.3 - - - - "
~
IB=O 60 - - - - - 0.3 - 0.3 rnA
40 - 0.2 - - - - - - • • 10"
ICES 60 - - - 0.2 - - - - NUMBER OF THERMAL CYCLES
rnA
VEB=O 80 - - - - - 0.2 - - '2CS-laOOSRI
100 - - - - - - - 0.2 Fig. 3 - Thermal-cycling ratings for

TIP31 and RCA31-series.
lEBO
0 - 1 - 1 - 1 - 1 rnA
VBE=-5V
VCEO(sus)
0.038 40b - 60b - 80b - 100b - V :r: 100
IB=O .!. •
hFE
4 18 25 - 25 - 25 - 25 - ·.
~
" ,
4 38 10 50 10 50 10 50 10 50 ~
;:~
~
VBE 4 38 - 1.8 - 1.8 - 1.8 - 1.8 V •ffi
VCE(sat)
IB= 38 - 1.2 - 1.2 - 1.2 - 1.2 V
•~ '~~
~~~ ···'(~'CI.",. >"c
~~~
0.375A
hie
10 0.5 20 - 20 - 20 - 20 --
10
~I'\~
10'
, .,.
"
......... ,
10'
,
c
.
10'
92CS-22474
,
1=1 kHz
Ihlel RCS31-series
1=1 MHz 10 0.5 3 - 3 - 3 - 3 -
tON
(td+tr)
VCC=
30V 1 0.4 (typ.) 0.4 (typ.) 0.4 (typ.) 0.4 (typ.)
RL =30n
IB1=IB2 Ii 6Oi-""'""
=O.IA II! '0
loiS ~
tOFF
(ts+tl) I• 20
1\
. ,. ., .
10
VCC= g
30V 1 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) 1.2 (typ.) , , 2: "68
0.1 I 10
RL=30n COLLECTOR CURRENT lIe I-A
IB1=-IB2
=O.IA Fig. 5 - Typical dc beta characteristics
for TIP31. TIP31A, TIP31B.
TIP31 and
RCA31·series
- 3.125 - 3.125 - 3.125 - 3.125 RCA31. RCA31A, RCA31B,
RCS31. RCS31A,and RCS318.
ReJC
RCS31-series - 4.3 - 4.3 - 4.3 - 4.3
°CNJ
TIP31 and - 62.5 - 62.5 - 62.5 - 62.5
ReJA RCA31·series
RCS31'series - 60 - 60 - - 60
a Pulsed, pulse duration = 300 ps, duty factor ~ 2%.
b CAUTION: Sustaining voltage, VCEO(susl, MUST NOTbe measured on a curve tracer.
0.01
.. 0.1
COLLECTOR CURRENT IIC)-A
I
.
10

TlP31C. RCA31Cand RCS31C.
_______________________________________________________________________ 399
POWERTRANSISTORS ____________________________________________________________________________
TIP32. RCA32. RCS32 Series

Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
The RCA-TIP32, RCA32 and RCS32-series They differ from' each other in voltage rat-
Features:
are epitaxial-base, silicon p-n-p transistors ings. • 40 W at 250 e case temperature
intended for a wide variety of switching and The TI P32 and RCS32-series are supplied in • 5 A rated collector current
amplifier applications, such as series and the JEDEC TO-220AB straight-lead version • Min_ fy of 3 MHz at -10 V, -500 mA
shunt regulators and driver and output stages of the VERSAWATT package, and can be
of high-fidelity amplifiers. These power tran- • Designed for complementary use with
provided in formed-lead configurations upon
sistors are designed for complementary use request. The RCS32-series are supplied in the
TIP31, ReA31 and RCS31-series
with devices in the TIP31, RCA31 and JEDEC TO-213MA hermetic package. n-p-n types
RCS31-series.

TIP32 TIP32A TIP32B TIP32C (FLAl.GEI
RCS32 RCS32A RCS32B RCS32C
v CBO ' -40 -60 -80 -100 V
VCEO' -40 -60 -80 -100 V
-5 -5 -5 V 92C5-21519
VEBO ' -5
IC' . -5 -5 -5 -5 A BOTTOM VIEW
lB' . -1 -1 -1 -1 A
PT : • JEDEC TO-220AB
AtTC';;;25.C . . . . . . . . . . . • 40 40 40 40 W TI P32 and RCA32-serias
AtT A ';;;25C. . . . . . . . . . . • 2 2 2 2 W
>
At T C 25·C(TIP32 and ACA32-series) Derate line.rly 0.32 W/·C
c
'CQ)
ACS32 ...ri.. Oerate line.rly 0.23 W/·C
T stg- TJ TIP32 and ACA32-s.rie•. -65 to 150 ·C
ACS32..eries . • . . -65 to 200 ·C
TL (During soldering):
At distance liB in. (3.17 mm) from case for
lOs max. TiP32 and ACA32... rie.. • . . 235 ·C
At. distance;;;' 1/32 inch (0.8 mm) from seating 'IC.-1I'511
pia". for lOs max. . . .(ACS32-series) . 235 ·C
JEDEC TO-213MA
RCS32-series
NOTEI CURfI£NT DERATING AT CONSTANT \IOl.TAGE

APPl.IES ONL.Y TO THE OISSIPATION-UMIT£D PORTION
OF MAXIMUM-OPERATING-AREA CURVES DO
MOT OERATE THE SflECIFlEO VALUE FOR Ie MAX.
III 150 711 100 11:11 IISO 175 100

CASE TEMP£RAT1JR£ ITe'·-C
92CS-19665
-100
COLLECTOR-TO-EMITTER YOLTA8EtVCE)-V
Fig_ 2 - Derating curve for TIP32 and
RCA32-series_
Fig. 1 - Maximum operating areas for TIP32-series.
400
_______________________________________________________________________________ POWERTRANSISTORS.

ELECTRICAL CHARACTERISTICS, At CaStl Tempertlture (TC) = 2SOC unlessot!lerwiStlspecified
TESTCOND. LIMITS
VOLT· CUR. llP32 llP32A llP32B llP32C
CHARAC· Units
AGE RENT RCA32 RCA32A RCA32B RCA32C
ICEO -30 - -0.3 - -0.3 - - - -
IB=O -60 - - - - - -0.3 - -0.3 rnA
-40 - -0.2 - - - - - -
ICES -60 - - - -0.2 - - - -
rnA
VEB=O -80 - - - - - -0.2 - - NUMBER OF THERMAL CYCLES
-100 - - - - - - - -0.2 Fig. 3 - Thermal·cycling ratings for

TIP32 and RCA32·series.
lEBO
0 - -1 - -1 - -1 - -1 rnA
I.IBE=5V
VCEO(SUS)
-0.03a -40b - -60 b - -80b - -100b - V
IB=O
--4 -la 25 - 25 - 25 - 25 -
hFE -4 -3a 50 10 50 10 50 50
10 10
VBE -4 -3 a - -1.8 - -1.8 - -1.8 - -1.8 V
VCE(sat)
IB= -3a - -1.2 - -1.2 - -1.2 - -1.2 V
-0.375A
hIe
-10 -0.5 20 - 20 - 20 - 20 --
NUMBER Of THERMAL CYCLES
1=1 kHz
Ihlel Fig. 4 - Therma/-cycling rating chart for

1=1 MHz -10 -0.5 3 - 3 - 3 - 3 - RCS32-series.
tON COLLECTOR-TO-EMITTER
]
(td+tr)
•
VOLTAGE (VeEI =-4V
VCC= ~ 400 CAsl TEMJER1TJRLr. }

-30V -1 ().2 (typ.) 0.2 (typ.) 0.2 (typ.) 0.2 (typ.) ffi
9i ~
p---
200
Rl =3012
IB1=IB2 ~• 100 ~
=-O.IA
tOFF
j1S I: -40·C
~
"-
'\.,
I
40
(ts+tl)
20
"\~
VCC=
-30V
Rl=30n
-·1 1 (typ.) 1 (typ.) 1 (typ.) 1 (typ.)
g
10
·0.01
2 4 ..-0.1
, 4 ..-I
COLLECTOR CURRI:.NT (Icl-A
,
'\
4 ..-10
IB1=-IB2
=-O.lA Fig. 5 - Typical dc beta characteristics for
TIP32, TlP32A, TlP328; RCA32, RCA32A,
TIP32and - RCA328, RCS32, RCS32A and RCS328.
RCA32-series
3.125 - 3.125 - 3.125 - 3.125
ROJC
RCS32-series - 4.3 - 4.3 - 4.3 - 4.3
oCIW
TIP32and - -
62.5 - 62.5 - 62.5 62.5
ROJA RCA32-series
RCS32-series - 60 - 60 - - 60
a Pulsed. pulse duration = 300 j1S, duty factor';;; 2%.
b CAUTION: Sustaining voltage, VCEO(SUS). MUST NOT be measured on a curve tracer.
g I
-0.01 ." -0·' -I

COLLECTOR CURRENT (IC1-A
.,. -10
Fig. 6 - Typical dc beta characteristics for TlP32C.

RCA32C and RCS32C.
401
TIP41, RCA41 Series

The RCA-TlP41 and RCA41-series are epi- with devices in the TI P42 and RCA42·series. Features:
taxial-base, silicon n·p·n transistors intended They differ from each other in voltage • 65 W at 250 C case temperature
for a wide variety of switching and amplifier ratings. They are supplied in the JEDEC • 7-A rated collector current
applications, such as series and shunt regu· TO·220AB straight lead version of the
lators and driver and output stages of VERSAWATT package, and can be provided • Min. fTof 3 MHz at 10 V, 500 mA
high-fidelity amplifiers. These power tran· in formed-lead configurations upon request. • Designed for complementary use with
sistors are designed for complementary use TlP42 and RCA42-series p-n-p types

TIP41 TIP41A TIP41B TIP41C TERMINAL DESIGNATIONS
RCA41 RCA41 A RCA41B RCA41C
VCBO ..............................•. 40 60 80 100 V
V~O ............................... . 40 60 80 100 V
VEBO ............•............ ,...... . 5 5 5 V C
IC ., ................................. . (FLANGE)
7 7 A
ICM'" •...•.......•................... 10 10 10 10 A
I B ................................... .
PT :
3 3 3 A
E
/
At TC ..; 25°C .................•.... 65 65 65 65 W 9ii!:CS-27519
At TA ..; 25°C .•..•.•.......•••..... 2 2 2 2 W BOTTOM VIEW

At T C > 25°C ........ Derate linearly at 0.52 W/oC
JEDEC TO·220AB
Tstg,TJ .............................. . -65 to 150 °c
T L (During soldering):
At distance 1/8 in. (3.17 mm) from case
for 10 s max ..•....................... 235 °c
NOTE: CURRENT DERATING AT CONSTANT VOLTAGE
APPLIES ONLY TO THE DISSIPATION·UMITED PORTION
OF MAXIMUM-OPERATiNG-AREA CURVES 00
NOT DERATE THE SPECIF'IED VALUE FOR Ie MAX.
25 50 15 100 125 I~ 17S 200

CASE TEMPERATURE (TC)-"C
Fig. 2 - Derating curves for all types.
COLL.[CTOR-TO-EMITTER VOLTAGE (VCEI-V
Fig. 1 - Maximum op6rating Breas for all types.
Fig. 3 - Thermal-cycling ratings for all types.
402 ________________________________________________________________
_______________________________________________________________________________ POWERTRANSISTORS
TIP41, RCA41 Series

.
ELECTRICAL CHARACTERISTICS At Ca·IS Toampere ura (T.)
CJ = 2!PC
CHARAC- Voltage Current TIP41 TIP41A TIP41B TIP41C
TERISTIC Vdc Adc RCA41 RCA41A RCA41B RCA41C Units
ICEO 30 - 0.7 - 0.7 - - - - mA
IS=O 60 - - - - - 0.7 - 0.7
ICES 40 - 0.4 - - - - - -
VSE=O 60 - - - 0.4 - - - - mA
80 - - - - - 0.4 - -
100 - - - - - - - 0.4
IESO 0 - 1 - 1 - 1 - 1 mA
VSE=-5 V
VCEO(sus)
IS=O
0.03a 40b - 60 b - SOb - 100b - V
4 0.3 a 30 - 30 - 30 - 30 -
hFE
4 3a 15 150 15 150 15 150 15 150
VSE 4 6a - 2.2 - 2.2 - 2.2 - 2.2 V
VCE(sat)
IB=0.6·A
6a - 2 - 2 - 2 - 2 V
hfe 10 0.5 20 - 20 - 20 - 20 -
f=l kHz
Ihfei
f=l MHz
10 0.5 3 - 3 - 3 - 3 -
tON (td + t r )
VCC=30 V.
6 0.6 (typ.) 0.6 (typ.) 0.6 (typ.) 0.6 (typ.)
RL =5 n.
IB1=IB2=0.6 A I I I I p..
tOFF (t. + tt)
VCC=30 V.
I I I I
6 1.4 (typ.) 1.4 (typ.) 1.4 (typ.) 1.4 (typ.)
RL=5 n.
IB1=IS2=0.6 A
R9JC - 1.92 - 1.92 - 1.92 - 1.92
°C/W
R9JA - 62.5 - 62.5 - 62.5 - 62.5
a Pulsed. pulse duration = 300 IA. duty factor .;; 2%.

b CAUTION: Sustaining voltage. V CEO (sus), MUST NOTbe measured on a curve tracer.
;1000: COLLECTOR-TO-EMITTER VOLTAGE (VCEI- 4 \1 r-t+-

b CASE TEMPERATURE (TC,-125 e c
~ '" ~
Loo'L---I--"'-..- ~;. ~
~ :~-+--4-4-~--~~~~~+-~
a 4r--+--~~rr--+~"~~~~
I '~-+--4-4-~--+-~"~~~~
g ,\.,
'0 ~
4 68 , 2 '" I> 8
COLLECTOR CURRENT (:1C)-A
Fig. 4 - Typical de beta characteristics

for all types.
403
Ii
Ii
TIP42, RCA42 Series

Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
The RCA-TIP42 and RCA42 series are They are supplied in the JEDEC T0-220AB Features:
epitaxial-base silicon p·n·p transistors in- straight·lead version of the VERS,ll.WATT • 65 W at 250 C case temperature
tended for a wide variety of switching and package, and can be provided in formed-lead
• 7 A rated collector current
amplifier applications, such as series and configurations upon request.
shunt regulators and driver and output, • Min. fT of 3 MHz at 10 V, 500 mA
stages of high·fideli~amplifiers. These power • Designed for complementary use with
transistors are designed for complementary TIP41 and RCA41-series n-p-n types
use with devices in the TlP41 and RCA41·
series. They differ from each other in voltage
ratings. TERMINAL DESIGNATIONS

TIP42 TIP42A TIP42B TIP42C
VCBO ....................... -40 -60 -80 -100 V c
(FLANGE)
VCEO ....................... -40 -60 -80 -100 V
- 5
vEBO
IC
.......................
....................... "
- 5
- 7
- 5
- 7
- 5
- 7 - 7
V
A I
E
ICM . . . . . . . . . . . . . . . . . . . . . . . . . -10 -10 -10 - 10 A 92CS-27S19
IB .... . . . . . . . . . . . . . . . . . . . .. - 3 - 3 - 3 - 3 A BOTTOM VIEW

PT :
At TC <: 25°C JEDEC TO·220AB
65 65 65 65 W
At TA <: 25°C 2 2 2 2 W
At TC::> 25°C ..... ,. Derate linearly at _______ 0.52 _ _ _ _ _ _ _ __ wfc
Tst9' TJ . . . . . . . . . . . . . . . . . . . . . . , _ _ _ _ _ _-65 to 150 _ _ _ _ _ _ __ °c
NOTe CURRENT DERATING "'T CONSTANT VOLTAGE
T L (During soldering): APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION
OF MAXIMUM-OPERATIN<;-AREA CURVES DO
At distance 1/8 in. (3.17 mm) from case NOT DERATE THE SPECIFIED VALUE FOR Ie MAX.
for 10 s max. _ _ _ _ _ _ _ 235 _ _ _ _ _ _ _ _ _ oC
150 I~ 200
CASE TEMPERATURE (Tcl-OC
Fig. 2 - Derating curve for all types.
! ': "'M'''C(~~~j,
ii I~ ---3P \ ~~~~v,c-~<"
13 6
1 ,r \ ,\{'-s-'V"1-:
~ 'r--~ \ 1\[\ ~~,

~
2r-~
~ \.\ \~~c
C»LLECTOA-TO-EMITTER VOl.TAGE (VCE)-V
,
- ~
0
\~ i\°1h\' , .
, 3 4 8 2 4
,,' '0'
NUMBER OF THERMAL C'I'CLES
'o'
Fig. 1 - Maximum operating areas for a/l types. Fig. 3 - Thermal·cycling ratings for all types.
404
POWER TRANSISTORS
TIP42, RCA42 Series

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C
TESTCOND. LIMITS
VOLT· CUR·
CHARACTER· AGE RENT TIP42 TIP42A TIP42B TIP42C
ISTICS V de A de UNITS
ICEO - 30 - -0.7 - -0.7 - - - -

la=O -60 - - - - - -0.7 - -0.7 mA
ICES - 40 - -0.4 - - - - - - ° I
VEa= 0 - 60 - - - -0.4 - - - -
mA
-0.01 -0.1 -I
2 "69
-10
COLLECTOR CURRENT CI.Cl-A
2 46'
-100
- 80 - - - - -. -0.4 - -
-100 - - - - - - - -0.4 Fig. 4 - Typical dc beta characteristics for
TIP42, TIP42A, TIP42B, RCA42,
IEaO
VaE = -5 V
0 - -1 - -1 - -1 - -1 rnA RCA42A and RCA42B.
VCEO(sus)
la = 0 -0.03" -40b ~
-60b - -80 b - .1001 - V
hFE - -4 -0.3" 30 - 30 - 30 - 30 -
-4 -38 15 150 15 150 15 150 15 150
VaE -4 -68 - -2.2 - -2.2 - -2.2 - -2.2 .V

VCE(sat)
la =-0.6A -6" - -2 - -2 - -2 - -2 V
hfe
f = 1 kHz -10 -0.5 20 - 20 - 20 - 20 -
Ihfe l
f = 1 MHz -10 -0.5 3 - 3 - 3 - 3 -
tON (td + t r ) 2 "68
-0.01 -0.1 -I -10 -100
VCC=-30V COLLECTOR CURRENT lIel-A
92CS-2IB41
-6 0.3 (typ.) 0.3 (tyP.) 0.3 (typ.) 0.3 (typ.)
RL = 50
la1 = la2 = -0.6 A TlP42C and RCA42C.
f.I.S
tOFF (ts +tf)
VCC=-3O V
-6 0.7 (tyP.) 0.7 (typ.) 0.7 (tyP.) 0.7 (tyP.)
RL =50
la1 = la2=-0.6A
ROJC - 1.92 - 1.92 - 1.92 - 1.92
°CIW
ROJA - 62.5 - 62.5 - 62.5 - 62.5
a Pulsed, pulse duration = 300 JJS, duty factor :e;,;;; 2%.
b CAUTION: Sustaining voltage, VCEO(susl, MUST NOT be measured on a curve tracer.
405
POWER TRANSISTORS
TIP47, TIP48, TIP49, TIP50

High-Voltage Silicon N-P-N VERSAWATT Transistors
The RCA-TlP47, TIP48, TIP49, and TIP50 output circuits. They are supplied in the Features:
are silicon n-p·n transistors with pi-nu con· JEDEC TO-220AB straight·lead version of
struction. Typical applications for these the VERSAWATT package, and can be pro·
• Rugged clip-type pellet
transistors include high·voltage switches and vided in formed-lead configurations upon attachment
switching regulators. TV horizontal-deflec- request. • Glass passivated chip
tion circuits, power supplies, and TV audio-
• VERSAWATT package
(molded silicone plastic)
MAXIMUM RATINGS, Absolute-Maximum Values: • Maximum safe-area-of-
TIP47 TIP48 TIP49 TIP50 operation curves
V CBO ' 350 400 450 500 V
vCEOlsus) 250 300 350 400 V
V EBO · 5 5 5 5 V TERMINAL DESIGNATIONS
IC' 1 1 A
B
4/
ICM 2 2 2 2 A
IB . 0.6 0.6 0.6 0.6 A
c
PT :
T C up to 25°C. 40 40 40 40 W
T C above 25°C.
T A up to 25°C.
Derate linearly 0.32
1.8
W/oC
W E
I
Tstg ' T J . _______ -65 to 150 °c 92CS-27519
TL: BOTTOM VIEW

At distance;;;' 1/8 in. 13.17 mm) from
JEDEC TD-220AB
seating plane for 105 max. 235 °c
iiJ COLLECTOR-TO-EMITTER VOLTAGE {VCE}-IOV

~ 110 CASE TEMPERATURE (Tcl-25·C ,_
2
~
lOOt----::: r-
901--- ------ r-- ~
CASllIMPIItATURIITC,-·rc
(CURYI,S MUST II DlltATlD UNlAilLY i BOt-- r--
7Ot-- 1\
WITH INCREASE IN
! 60
00(-----
1\
i!1 40 11
g 30
0.01
, 0.1
.
COLLECTOR CURRENT IIC I-A
92CS-Z86!11
Fig.2 - Typical dc beta characteristics

for all types.
fI • 104 fI fllOI
COLLECTOR-TO-EMITTt:R YOLTAGEIVC(l- V NUMBER Of' THERMAL CYCLES
92CS-2B656
Fig. 1 - Maximum operating areas for all type&. Fig.3 - Thermal-cycling rating chart for all types.
406 ___________________________________________________________________
POWER TRANSISTORS
TIP4 7, TIP48, TIP49, TIP50

ElECTR ICAl CHARACTER ISTICS, At Case Temperature (TC) = 25f'C unless otherwise specified
.· r-
100, COLLECTOR~TO~EMITTER \lQ.TAGr IVerl-IO v
CASE TEMPlftATURE n; J.U-C
! •
TESTCOND. LIMITS I
-;.
VOLT· CUR·
CHARACTERISTIC AGE RENT TlP47 TIP48 TIP49 TIP60 -UNITS
L:
II ··
Vdc Adc
VCE IC Min. Max. Min. Max. Min. Max. Min. Max. .........
ICEO 150 - 1 - - - - - - , 1\
IB = 0 200 - - - 1 - - - - rnA
RBE=1000n 250 - - - - - 1 - - I
300 - - - - - - - 1 ODI • • • 0..

COLLECTOR CURR£NT Clcl- A
, • I
350 - 1 - - - - - -
400 - - - 1 - - - - Fig.4 - Typical gain~bandw;dth characteristics
ICES rnA forsll type••
VEB = 0 450 - - - - - 1 - -
500 - - - - - - - 1
lEBO - - -
0 - 1 1 1 1 rnA
VBE = -5 V COllECTOR-TO-EMITTER VOLTAGE (YeE) -10 v
CASE TEMPERATURE (Tc)-e-C
10 1" 10 - 10 - 10 - 10 - >
hFE 10 0.03a 30 150 30 150 30 150 30 150 ~o.. _.-'"''''1---"
VCEO(SUS)
0.3a 250 b - 30Qb - 350b - 400b - V !g o.6.l=_l--~=F=:I=+t==---I----l---l----l--.j
IB = 0
c
VBE 10 1" - 1.5 - 1.5 - 1.5 - 1.5 V w
t: 0.4- - - +--+-++--i----+-H--1
VCE(sat)
-
a
IB=0.2A 1" - 1 - 1 - 1 1 V ~
~O.2--
Ihfel
f = 1 MHz
10 0.2 5 - 5 - 5 - 5 -
6 8 1 !lo 1000
fT COllECTOR CURRENT (I.C)-mA
f = 1 MHz
10 0.2 5 - 5 - 5 - 5 - MHz
- Fig.5 - Typical base-to-emitter voltage VI.
hfe collector current
10 0.2 25 - 25 - 25 - 25 -
f = 1 kHz
ISlb
t = 0.5 S
100 - 0.4 - 0.4 - 0.4 - 0.4 - A
CASE TEMPERATURE ITcl-25-C
toN (td + tr)C
VCC = 200 V
1 0.2 (:YP.) 0.2 (typ.)
I
0.2 (typ.)
I
0.2 (typ.)
I::
t,c
VCC = 200 V 1 2 (typ.) 2 (\YP.) 2 (typ.) 2 (typ.) lAs ;
iI.O"
II
tfC I I I I
li~2 ."'V / /
~
Vee = 200 V 1 0.5 (typ.) 0.5 (typ.) 0.5 (typ.) 0.5 (typ.)
;:;Y
ROJC -
-
3.12 - 3.12 -
-
3.12
70 .
-
-
3.12
oCIW fc 0.1
./'
. .. . ..
70 - 70 70
ROJA
~
2 2
a Pulsed, pulse duration = 300 lAs, duty factor';; 2% .. 10 100 1000
COLLECTOR CURRENT I Ie ) -tnA
b CAUTION: Sustaining voltage, VCEO(SUS), MUST NOT be measured on a curve tracer.
C IB1 = IB2 = 0.1 A. Fig.6 - Typicalssturstion-voltsge chsrscteri.tJcs
for all types.
407
POWER TRANSISTORS
TIP120, TlP121, TIP122, RCA120. RCA121, RCA122

a-Ampere N-P-N Darlington Power Transistors Features:
• Operates from Ie without predriver
60,80, and 100 Volts, 65 Watts • Low leakage at high temperature
Gain of 500 at 0.5 A • High reverse second-breakdown capability
Gain of 1000 at 3 A Applications:
These devices are supplied in the JEDEC TO- • Hammer drivers
The RCA-TIP120, TIP121, TIP122, RCA
120, RCA121 and RCA122 are monolithic 220AB straight-lead version of the VERSA- • Series and shunt regulators
n-p-n silicon Darlington transistors designed WATT package. Optional lead configura-
for low- and medium-frequency power appli- tions are available upon request. For in-
cations. The double epitaxial construction of formation, contact your nearest RCA Sales
these devices provides good forward and Office.
reverse second-breakdown capability; th'eir The TlP120, TIP121 and TlP122 are n-p-n
high gain makes it possible for them to be complements of the TIP125, TIP126 and
driven directly from integrated circuits. TIP127. The RCA120 and RCA121 are n-p-n
complements of the RCA 125 and RCA 126.

I
E
92CS-27!519
TIPI20 TIP121 TIP122
RCAI20 RCA121 RCA122 BOTTOM VIEW
VCBO' 60 80 100 v JEDEC TO-220AB
VCER('u,)
RBE = 100 n. 60 80 100 V
VCEO('us) 60 80 100 v
VCEV('us) ,----------,
V BE = -1.5 V 60 80 100 V I I
V EBO ' 5 5 5 V I I
8 8 8 A
IC'
10 10 10 A
I I
ICM
IB . 0.25 0.25 0.25 A I I
PT : I I
Tc upt025:C 65 65 65 W IL _ _ _ _ _ _ _ _ _ -1I
TC above 25 C Derate I inearly at 0.52 W/oC
f stg • T J . . . -65 to 150 °c
rL 92CS-20691R2
At distance ;;'118 in. (3.17 mm) from case for 10sma •• 235 °c Fig. 1 - Schematic diagram for all types.
COLLECTOR-TO-EMITTER VOLTAGE 'YeEI-V COLLECTOR-TO-EMITTER VOLTAGE 'VeE)-V

92CS-21977
Fig. 2 - Maximum operating areas for TIP120 and TIP121. Fig. 3 - Maximum operating areas for TIP122.
408 ______________________________________________________ ----~-----

POWER TRANSISTORS
TIP120, TIP121, TIP122, RCA120, RCA121, RCA122

ELECTRICAL CHARACTERISTICS, At Case Temperature (TCl = 2fiOC NDTt, Cl.RAENT OERATING AT CONSTANT
VOll'AGE APf'\JES ONLY 10 THE DISSIPATION-
LIMlT£D PORTION AHO THE XS/b -L.IMITED
TEST CONDITIONS LIMITS PCATION QFMAXIMUM OPERATING AREA
CURVE, DO NOT DERATE THE
SPECIFIED VAllIE FOR 1c MA)(
CHARAC· Voltage Current TIP120 TIP121 TIP122
UNITS
TERISTIC Vdc Adc RCA120 RCA121 RCA122
VCE VBE IC IB Min. Max. Min. Max. Min. Max.
60 - 0.2 - - - -
ICBO 80 - - - 0.2 - -
IE=O 100 - - - - - 0.2
mA
30 0 - 0.5 - - - -
ICEO 40 0 - - - 0.5 - - 2S '" 1S
CASE TEMPeRATURE (TCI-·C
100 12S I~ 200
50 0 - - - - - 0.5
Fig. 4 - Derating curve for all types.
lEBO -5 0 - 3 - 3 - 3 mA
VCEO(sus) 0.2a 0 60 - 80 - 100 - V
3 3a 1000 - 1000 - 1000 - _10":
hFE 3 0.5 a 500 - 500 - 500 - J 4
COLLECTOR-TO-EMITTER VOLTAGE (VCE)- 3Y r==
2 1
..
VBE 3 3a - 2.5 - 2.5 - 2.5 V i 2
3a 0.012 - 2 - 2 - 2 ffilO' I
VCE(sat) V
_.
~ :
.L'
5a 0.02 - 3 - 3 3 .<ff.
V
hfe
5 1 1000 - 1000 - 1000 - ~ ",""
f=l kHz 0!- "
:
Ihfel m • ~~#-
- - - I
5 1 20 20 20
.,., ,p',
f=l MHz
Cobo
g
. ..I
~
I
, . .. , . ..
CURRENT IIcl-A
10 100
VCB=10 V - 200 - 200 - 200 pF 92CS-24902R1
Fig. 5 - Tvpical dc beta characteristics

f=l MHz
for all types.
ES/b
L=12 mH, -1.5 4.5 120 - 120 - 120 - mJ
RBE=100 n '00,
ISlb
t=0.5 s non· 25 2.6 - 2.6 - 2.6 - A •I
• . ~1l,~1
I
rep. pulse ~ 2
ROJC - 1.92 - 1.92 - 1.92 °C/W ~

\ \.,
f 'Q, &
iiii5 6? ~..c
a Pulsed, puis. duration = 300 IlS, duty factor .;;; 2%.
.:i! I''!:.,~
I . g
2:l!
,I- If ,l"e·6'I' ~~I\.~1,~

2
104
2 .. 10 5
2 .. ,
92CS-26424
Fig. 6 - rhermal-cycling rating chart for all types.
COlLECTOR CURRENT l!cl-IA 17.S COLLECTOR-TO-£MITTER VOLTAGE (VeE). :sv

COLLECTOR-TO-EY'TTER VOLTAGE IVCE)--SV
"
I' • 1
~
12 5
.
!:! 10
1;
2.'
10
0.01
... 0.1
FREQUENCY (f1-MH2
\.
10
6 e 10 12
COLLECTOR CURRENT {lei-A
lwlll
14
8ASE-TO-EMITTER VOLTAGE IV8EI-V
Fig. 7 - Tvpical small-signsl current gain Fig. 8 - Typical saturation characteristics Fig. 9 - Typical input characteristics
for all typas. for all type<. for all type..
_________________________________________________________________ ~9
POWER TRANSISTORS
TIP120, TIP121, TIP122, RCA120, RCA121, RCA122

COLLECTOR SIJIPL't VOI.TAGE (Vee). 20 V
IBI--I B2- 1C/ !lOO
10
i •
~ll.Il
10- .......
~
4
./'"
I
'1
.~
10
I V
r4,z(,i) !
~
u !
~ •
'I< ......
--
2 ./
<"
~ ~ 1"-..'
~
1
. . , ..
I .•
..}:::
1 2 • , , 4
10
IASE-TO-EMITTER VOI..TAGE (V8£)-V
COlLEC'rOR-TO"'tTT!R VOLTAGE (VCE)-A 112CS·2.. 907AI
COLLECTOR wtREtliT (Iel - A
92CS-IM.ot
Fig. 10 - Typical outpUt characte,i.tic. Fig. I I - Typical transf., characte,istics Fig. 12 - Typical saturated switching ch."'fracteristics
fo, all typas. fo, all typas. fo, all typas.
410~ ______________________________________________________________
POWER TRANSISTORS
TIP125, TIP126, TIP127, RCA125, RCA126

8-Ampere P-N-P Darlington Power Transistors Features:
• Operates from Ie without predriver
-60, -80, and -100 Volts, 65 Watts • Low leakage at high temperature
Gain of 1000 at -3 A • High reverse second-breakdown capability
Gain of 500 at -0.75 A Applications:
The RCA·TIPI25, TIPI26, TIPI27, RCA • Hammer drivers
125 and RCA126 are monolithic silicon 1- - - - - - - - --I • Series and shunt regulators
p·n·p Darlington transistors designed for low· I I
and medium·frequency power applications.
1
The high gain of these devices makes it
I
possible· for them to be driven directly from
I TERMINAL DESIGNATIONS'
integrated circuits.
IL _________ --11
These devices are supplied in the JEDEC
TO·220AB straight·lead version of the VER·
9ZCS-20863RI
SAWATT package. Optional lead configur-
Fig. 1 - Schematic diagram for all types. c
ations are available upon request. For in- (FLANGE)
formation, contact your nearest RCA Sales

Office.
The TIPI25, TIP126 and TIP127 are p-n-p
complements of the TIPI20, TIP121 and
TI P122. The RCA 125 and RCA 126 are p-n-p
-,---
E
complements of the RCA 120 and RCA 121. 92CS-27519
BOTTOM VIEW
MAXIMUM RAT I NGS, Absolutl!-Maximum Values:
TIPI25 TIP126 TIPI27 JEDEC TO-220AB
RCA125 RCA126
Vcso' -60 -80 -100 V
VCEolsus) -60 -80 -100 V
V EBO ' -5 -5 -5 V
IC' -8 -8 -8 A NOTE, APfILESDERATlNGl1T!~~~~.
CURRENT
VOLTAGE ONLY 10 T -
ICM -15 -15 -15 A UNITED PORTION AND THE
Is . -0.25 -0.25 -0.25 PORTION OF MAlCIfI1UM:~-.'-:"i~:::"

CURVE. 00 NOT DER
....EA·
A SPECIFIED VAWE FOR I:
PT :
T C ';;25°C 65 65 65 W
T C >25°C TIP125, TIP126, TIP127 Derate linearly at 0.52 wtc
RCA 125, RCA 126. Derate linearly to 150°C
T stg , T J . _ _ _ -65 to 150 °c
TL
At distance 1/18 in. (3.17 mm) from case for las max. 235 °c
is so 100 12~
CASE TEMPERATURE (Tcl-·C
Fig. 3 - Dissipation derating curve for all types.
·•
1008
;> ~
~~+..
I
~ 2
~
~
f
iiia
'0
."• ~ ..
.~ IZt,~
i!~ ~ ~ ~~.
i
1.
2
COLLECTOR-TO-EMITTER VOLTAGE 'YcE.-V ,I-
103 2 6 8 104 2
~1m .
6 8 105 2 4 6 8 106
Fig. 2 - Maximum operating areas for all types. Fig. 4 - Thermal-cycling rating chart for all typel.
411
TIP125, TIP126, TIP127, RCA125, RCA126

.
ELECTRICAL CHARACTERISTICS At Case Temperature (TCl = 2fiOC
··, COLLECTQfI-TO-EMITTER VOLTAGE (VeE}=-3 v ~I-
'rEST CONDITIONS LIMITS

CHARAC· Voltage Current TIP125 TIP126 TIP127 UNITS
TERISTIC Vdc Adc RCA125 RCA126 - 10'
VCE IC IB Min. Max. Min. Max. Min. Max. ~:~j- j -

;; ~< h
-30 0 - -0.5 - - - - ~, ~~
~03F==t::._\').f)·t. ~i, ""t. ...
ICEO -40 0 - - - -0.5 - - rnA
:1- ~~
-50 0 - - - - ~
-0.5
'IZ~~ I
lEBO
VBE=5 V
0
-O.03a 0 -60
- -10
-
-
-80
-10
-
-
-100
-10
-
rnA
V
10:1/1
-0,1
. ,.I -I
COLLECTOR CURRENT Ilc1-A
-10
..
VCEO(sus)
-3 -0.75 a 500 - 500 - 500 -
Fig. 5 - Typical de beta characteristics for all types.
hFE -3 '-3a 1000 - 1000 - 1000 -
VBE -3 -3a - -2.5 - -2.5 - -2.5 V
-3a -0.012 - -2 - -2 - -2
V
VCE(sat)
-5a -0.02 - -4 - -4 - -4
hfe -5 -1 1000 - 1000 - 1000 -
f=1 kHz
Ihfel ~5 -1 20 - 20 - 20 -
f=l MHz
ISib
t=1·s non rep. -20 -3.2 - -3.2 - -3.2 - A
pulse 1
R9JC - 1.92 - 1.92 - 1.92 °C/W BASE-TO-EMITTER VOLTAGE ("eEl-V
a Pulsed: Pulse duration = 300 1'5, duty factor";; 2%.

Fig. 6 - Typical transfer characteristics for all types.
VCC'- 20V
IBI-O-OI2A,lsz'O OIZA
1.4 T<:-25.C
0.1
8 '-10
COLLECTOR CURRENT fIe I-A
COLLECTOR-lO-EMITTER VOLTAGE 1VCE1-V
Fig. 7 - Typical output characteristics for all types. Fig. 8 - Typical saturated switchinl/"time
412 _________________________________________________________________
POWER TRANSISTORS
CH2102, CH2270. CH2405, CH3053, CH3439, CH3440, CH4036,

CH4037,CH5320-CH5323, CH6479
Jnmounted and Unencapsulated N-P-N and P-N~P Silicon Power Transistor Chips
~eatures:
Aluminum has been deposited at the base and emitter The chips are supplied in plastic containers. Each chip is
I Prepared and tested for use in hybrid circuits electrodes of all the transistor chips for ease of bonding. The securely held in a recessed partition of the container by a clear
I hFE ratings from 30 to 50 (min.) base and emitter bonding areas on each chip will accommodate plastic cover that also protects the surface from dust and abra-
I ICBO leakage ratings in the 10 pA to 1 mA range up to a O.003·inch (O.076-mmj·diameter bond wire except for sion. For additional protection, the container is sealed in a
I VCEO ratings up to 90 V on planar transistor chips; the l CH6479 which will accommodate aO.010-inch (O.254-mm) clear plastic bag. If the sealed shipping container is opened
up to 325 V on passivated mesa types wire. Either thermo-compression or ultrasonic bonding can be or broken, ruptured, punctured, or damaged in any way. the
, IC up to 12 A (CH6479) used to attach gold wires to these electrodes; aluminum wires chips must be stored at a temperature of not more than 400C
can also be bonded by conventional ultrasonic techniques_ and a relative humidity of not more than 50% in a clean, dust"
The collector contact, which is on the underside of the chip, free environment. If the sealed shipping container is damaged
has been metallized with gold for all of the chips except on receipt as described above, the product should be im·
"he transistor chip families described in this bulletin are
CH6479. For all of the chips, the collector can be attached mediately returned to RCA.
elected from the broad line of RCA discrete power transistors.
~nown also as pellets or dies, these chips represent the essen·
directly to a heat sink by adhesive or by gold-silicon or These unmounted and unencapsulated chips are tested elec"
ial electronic portion of the transistor. They are especially gold-germanium eutectic bonding methods. trically and visually inspected to meet the specifications
uited for direct mounting on a heat sink in hybrid circuits. The CH6479, because of its large size, must be mounted on a shown on the following pages. Written notification of non-con-
"he n-p-n and p-n-p types can be used either singly or in heat sink made of material with thermal expansion coefficient formance to such specifications must be made to RCA within
amplementary-pair configurations for large-signal medium- close to that of silicon; suitable materials are molybdenum or 90 days of the date of the shipment by RCA. RCA assumes no
lower applications. beryllium oxide. A special cleaning step is required in mount· responsibility for chips which have been subjected to further
ing the CH6479, . processing, such as, but not limited to, lead-bonding or pellet-
'" of the chip families shown are double-diffused epitaxial
mounting operations.
vpes. Six of the families are of planar construction; the All of the chips must be mounted in an inert or reduced
,ther is of a passivated mesa construction. The oxide layer atmosphere. The chips must not be subjected to more than RCA has the right to change the chip design and processing
nat results from conventional planar processing protects the 4000C for a maximum of 1 minute. Because of the specially without notification.
,Ianar types. The junctions and surfaces of the mesa prepared surfaces of the chips (except as noted for the Assistance in determining prODer mounting and bonding pro-
ransistor chips are protected by deposited glass-passivated CH6479), etching of the pellets or the use of flux is not cedures is available from RCA.
overings. recommended.
!N2102 Family (n-p-n) CH2102 CH2270 CH2405 CH3053
RCA-CH2102, CH2270, CH2405, and can be used either singly or in comple-

CH3053 are double-diffused n-p-n epi- mentary-pair configurations with RCA
taxial planar transistor chips similar to p-n-p chips CH4036 and CH4037 for
RCA-2N2102, 2N2270, 2N2405. and large-signal medium-power applications.
2N3053 transistors, respectively. They
ELECTRICAL CHARACTERISTICS. at Chip Temperature:: 250C
Test Conditiol1$ Limits
Voltage Current
CharacteriS1ic Symbol Vdc mAde CH2102 CH2270 CH2405 CH3053 Units
VCB VCE IC IE Min. Max. Min. Max. Min. Max. Min. Max.
® 4 Base Bonding Areas 0.008 in. Collector Cutoff
Current ICBO 60 10 10 10 10 p.A
(0.20 mm) diameter Emitter-to-Base
Breakdown V(BR)EBO 0.01 5 5 5 5 V
® Emitter Bonding Area 0.008 in. Voltage
Collector·to-
(0.20 mm) diameter Emitter Sustaining
VCEO{sus) 20 60 45 90 30 V
Voltage:
Base opena
DC Forward-
Current Transfer hFE 10 150 50 50 50 50
Ratio b
CH3439 CH3440
!N3439 Family. (n-p-n)
RCA-CH3439 and CH3440 are passivated quency response, and fast switching speeds,
mesa n-p-n transistor chips similar to these transistor chips can be used in high-
- those used in RCA-2N3439 and 2N3440 voltage differential and operational am-
~I'/r
~'f' i~",
1e high-voltage transistors. Because of their plifiers, high-voltage inverters and high-
ft
\j;.
'~ ..
,
..
e
~
high breakdown voltages, good high-fre-
ELECTRICAL CHARACTERISTICS. at Chip Temperature =250 C
Voltage, low-current switching regulators.
....."''\<
Test Conditions Limits
Symbol Voltage Current

Characteristic CH3439 CH3440 Units
I--- (1.06mm)-----'
,
0.042IN. .I Vdc mAde
VeB VCE Ie IE Min. Max. Min. Max.

Conector Cutoff Current leBO 200 20 50 pA
® Base Bonding Area 0.005 in. Emitter·to·Base Breakdown

Voltage V(BR)EBO 0.02 5 5 V
(0.13 mm) diameter Collector-to·Emitter

Sustaining Voltage: VCEO(sus) 20 325 250 V
® Emitter Bonding Area 0.005 in.

Base open a
DC Forward·Current
(0.13 mm) diameter hFE 10 20 30 30
Transfer Ratio b
.CAUTION: This voltage MUST NOT be measured on a curve tracer. bPulse tested; 2% duty factor. less than or equal to 300 Ils duration.
________________________________________________________________ 413
POWER TRANSISTORS
--~--------------------------------------------------~-
CH2102,CH2270, CH2405, CH3053, CH3439, CH3440,CH4036,
CH4037,CH5320-CH5323, CH6479
Unmounted and Unencapsulated N-P-N and P-N-P Silicon Power Transistor Chips (Cont'd)
CH4038 CH4037
2N4036 Family (p-n-p)
RCA-CH4036 and CH4037 are double- for amplifying large signals at a medium
diffused p-n-p epitaxial planar transistor power level. They can be used singly or as
chips similar to RCA-2N4036 and 2N4037 complements of RCA n-p·n chips CH2102,
transistors. Their high-voltage ratings and CH2270, CH2405, and CH3053.
heat-dissipating ability make them ideal
ELECTRICAL CHARACTERISTICS. at Chip Temperature = 25°C
Characteristic Symbol Voltage Current CH4036 CH4037 Units

Vdc mAde
VCB Vce Ie Ie Min. Max. Min. Max.
® 4 Base Bonding Areas 0:008 in. Collector Cutoff Current

Emitter-ta-Base Breakdown
leBO ·60 -10 -10 IJA
V
(0.20 mm) diameter Voltage
V(BRIEBO ·0.01 -6.5 -6.6
-20 V
(0.20 mm) diameter
Sustaining Voltage:
Base open a
VCEO(sus} ·65 -40
DC Forward-Current ·150 35
Transfer Ratio b hFE -10 35
2N5320 Family (n-p-n) CH5320 CH5321
RCA-CH5320 and CH5321 are double- transistors. They can be used singly or as
diffused n-p-n epitaxial planar transistor complements of RCA p-n-p chips CH5322
chips similar to RCA-2N5320 and 2N5321 and CH5323.
ELECTRICAL CHARACTERISTICS. at Chip Temperature =250 C
Test Condi1iol'll Limits
Characteristic Symbol Voltage Current CH5320 CH5321 Units

Vde mAde
VCB Vce Ie IE Min. Max. Min. Max.

Collector Cutoff Current~ leBO 60 10 10 IJA
® 4 Base Bonding Areas 0.008 in.
Voltage V(BRIEBO 0.01 5 5 V
(0.20 mm) diameter Collector-to-Emitter
Sustaining Voltage: VCEO(susl 20 80 55 V
Base open a
DC Forward-Current
hFE 10 250 30 30
(0.20 mm) diameter Transfer Ratio b
aCAUTION: This voh. MUST NOT be measured on a curve tracer_ 'Pul. tested; 2% duty factor, I... than or equal to 300 Il. durattoll.
2NS323 Family (p-n-p) CH5322 CH5323
RCA-CH5322 and CH5323 are double- complements of RCA n-p-n chips CH5320
diffused p-n-p epitaxial planar transistor and CH5321 for amplifying large signals
chips similarto RCA-2N5322 and 2N5323 at a medium power level.
transistors. They can be used singly or as
ELECTRICAL CHARACTERISTICS. at Chip Temperature - 250C
0.042 IN. I
(1.06 •• 1 - - 1 Characteristic Symbol Voltage Current CH5322 CH5323 Units
Vdc mAde
Vca VCE IC IE Min. Max. Min_ Mil<.
® 4 Base Bonding Areas 0.008 in. Collector Cutoff Current leBO ·60 ·10 -10 IJA
(0.20 mm) diameter Emitter-to-Base Breakdown
V(BRJEBO ·0.01 ·5 ·5 V
Voltage

Sustaining Voltage: VeEO(susl ·20 ·80 ·55 V
(0.20 mm) diameter Base open a
DC Forward-Current
Transfer Ratio b hFE ·10 ·250 30 30
POWER TRANSISTORS
CH2102, CH2270, CH2405, CH3053, CH3439.CH3440, CH~036.

CH4037,CH5320-CH5323, CH6479
Unmounted and Unencapsulated N-P-N and P-N-P Silicon Power Transistor Chips (Cont'd)
CH84711
2N6479 Family (n-p-n) RCA-CH6479 is a double-diffused n-p-n aerospace applications, and high-switching
epitaxial planar transistor chip similar to speeds make it ideal for use in high-speed
the RCA-2N6479 transistor. Radiation inverters, switching regulators, and mili-
hardening makes this type suitable for tary hybrid applications.
ELECTRICAL CHARACTERISTICS, at Chip Temperature'" 25°C
Characteristic Symbol Voltage Current CH6479 Units

V de mAde
0.154'•. Min. Max.
(3.91 • • ) VCB VCE IC
Collector Cutoff Current 'eBO 100 mA
® Base Bonding Area 0.013 in.

Voltage V,BRIEBO V
(0.33 mm) x 0.091 in. (2.31 mm) Collector-ta-Emitter

Sustaining Voltage: VCEO{sus) 25 60 v
Base open a
DC Forward-Current
hFE 500 40
(0.33 mm) x 0.091 in. (2.31 mm) Transfer Ratio b
CH6479 Chip Special Clean-Up Schedule:

Before eutectic mounting, the CH6479 chip must be etched for 30 seconds in a 10% (by volume)
electronic-grade hydrofluoric acid solution at 25°C :!:: 5 0 C with agitation, Normal precautions for
using hydrofluoric acid should be observed, The chip must then be dried and mounted within 8 hours,
CHIP INSPECTION INFORMATION
Each lot is inspected to a 2.5% AQL (cumulative) according

to Mil Std. 105 using 20 times magnification. The following Blistering, lifting or absence of the aluminum metallization.
defects determine the inspection criteria: Fractures or edges within 0.0005 in. (0.013) mm of the base
Foreign matter adhering to the base and emitter bond areas. collector junction.
Improperly cut pellets that include a portion of another Severed base-contact rings that isolate all the bonding pads
pellet. and most of the base area.
Brtdging by the metallization which causes a short. Oxide missing from the junction area.
415
416 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _-,..-_ _ _ _-,-_ _ __
RF Power Transistors
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ _ 417
RF~ERTRANSISTORS ______________________________________________________________________ ~
2N2857
Silicon N-P-N Epitaxial Planar Transistor :e::::s~aln_band.idth fT' 1000 MHz min.
product-
• high converter (q&0-to-30 MHz) gain-

For UHF ApplicatiliS il IndllSlrial II~ MIR., Eqli,II" Gc ' 16 dB typo for circuit bandwidth' of
approxi.ately 2 MHz
• high power gain IS' neutral ized ampl ifler-
Gpo' 12.& dB min. at q&O MHz for circuit
bandwidth of 20 MHz
Maximum Ratings, Abso!ute-Ha:d",," Ya!ues: • high power output as uhf oscillator-
COLLECTOR-TO-BASE VOLTAGE. VCBO.. 30 max. V P 130 mW min •• qO mW typo at 500 MHz
COLLECTOR-TO-EMITTER VOLTAGE. VCEO 15 ma •• V o • 20 mW typ., at I GHz
EMITTER-TO-BASE VOLTAGE. VEBO • • • 2.5 ma •• V
COLLECTOR CURRENT. IC. • • • . •• 40 ma •• mA • low device noise flgure-
TRANSISTOR DISSIPATION 6 Pr:
NF =jq..5 dB max. as ".50 MHz ·amp! ifier.
:~rc::uer~:W- {~bo~d- ~~o ~: : De~ate 3~~ i~72 mW/IY~ 7.& dB typo as q50-to-30 MHz converter
At ambi ent {UP to 25°C. • 200 W • low collector·to·base time constant-
temperatures above 25 0 C • . De~ate at 1~i4 mW/~C rb'C c = 7 ps typo
TEMPERATURE RANGE: • low co !1ector.. to·base feedback capac I tance-
Storale and3heratins (Junction) .. 65 to +200 DC Ccb • 0.6 pF typo
LE~~ Jfs~~~:!~ ~ (~21i~cho}~~~ing):
seating surface for 10 TERMINAL DESIGNATIONS
seconds max • • • • • 265 max~ DC
Measured at center of seating surface: I~C

E~
CASE
92CS·27513
ELECT.R ICAL CHARACTER IST ICS, At on Aabient Temperature, TA = 2SO C, Unless Otherwise Specified JEDEC To-72

DC DC DC DC
Coli actor- Colle<;ttr Emitter- DC Collee-
2~~~7
Characteristic ymbol Frequency to-Base Bni'fter Bue
Voltage toyo~~ia. r ~if:::
tor
Current Current CUrrent Units
' VCB VCE VEB. IE IB IC
f
IIIZ V V V IlIA IlIA IlIA Min. Typ. Max.
Collector-Cutoff
CUrrent ICBO it:I:g0 8
1&
15
0
0 - - 10
1.0 ::
Collector-to-Sa..
Breakdown Vol tege YCBO 0 0.001 30- - V
Coli ector-to-£mi Uer
Breakdown Voltage BVCEO 0 3, 16- - Y
£mltter-to-Base
Breekdo... Yo I tage BVEBO -0.01 0 -
'2.& - V
~!~~~/~;:~~;r hFE I 3 30- 150

Ratie
o 101110.10.
~~~;f' '~~:fer;-rd~
Ratio
h fe O'm~ 6
6
2
6
SO
10
-- 220
19
c:GL1.IC'1'OR a.DfI' 'lel .. MA
eecI--,.....
Col1ector·to--8ase
Feedback Capac i tance Cob 0.1 to Ib 10 0 - 0.6 1.0 pF
Fig. I - Small-signal beta characteristic
Input CatPaCitMce
Collector-to-Saae
Cib 0.1 to I
31.8 c 6
0.5
-2
0
q
- I.q
7
-
15
pF
ps
for type 2N2857.
Ti .. Constant rb'C c
=nl;~iro:.!r ~~
Neutralized Am!!1 i fier
Circuit ..'
~e II50 c 6 1.6 12.5 - 18 dB
~r:;~tI1 .. Qacil- Po ~500a 10 -12 30 - - mW

UHF Device Moise Figure MF 'I6OC.d. f 6 1.5 - 3.8 q.& dB
UHF Measured Moi se
Figure MF IU)Oc,d 6 1.5 - -, 5.0 dB
VHF Device Moise Flgur MF SOb.'" 6 "I - 2.2 - dB
a Fourth lead (case) not connected

b 'Three.terminal measurement: Lead No.1 (Fmitter) and lead No." (Case) connected to guard terminal.
C Fourth. lead (case) grounded.
: Gen.erator . resistance, 8g III SO ohms.
Generator resi stance, Rg '" 400 ohms.
f Device noise figure is approximately 0.5 dB lower than the measured noise figure. The difference is due to the
in,sertion loss at the input of the test circuit (0.25 dB) and the contribution of the following stages in the test set.
up (0.25 dBI.
Fig. 2· Rating chart for type 2N2857.
418 ________________________________________________________________
2N2876
Features:
Silicon N-P-N Planar Transistors • High Power Output. Unneutrallzed (POUT):
For Large-Signal, High-Power, VHF Applications in Militarv and Industrial 10 w m~n. at 50 Me} 2"2876
3 w min. at ISO Mc
Communications Equipment • High Voltage Ratings:
VCBD = 80 volts max.
VCEO = 60 volts max.
• 100 per cent tested to assure freedom from second
breakdown in class A operation at maximum ratings
MAXIMUM RATINGS, Absolute-Maximum Values: RCA-2N2876 Features:

2N2876
• low Thermal Resi stance (BJ-C>-
COLLECTOR-TO-BASE VOLTAGE, V CBO' 80 volts high-thermal-conductivity ceramic insulation between
COLLECTOR-TO-EMITTER VOLTAGE: collector and mounting stud
With base open, V CEO . 60 volts • Isolated Stud Package:
With V BE = -1.5 volts. V CEV ' 80 volts all three electrodes electrically isolated frOfltcase
EMITTER-TO-BASE VOLTAGE, V EBO ' 4 volts -for design flexibility
heavy copper mounting stud-for effective contact
COLLECTOR CURRENT, IC . 2.5 amp with heat sink
TRANSISTOR DISSIPATlqN, PT : pin termi na Is arranged on a .200" pi n-c i rc led i ameter
At case } up to 25 C. . 17.5 watts -fit commercially available sockets
temperatures above 25u C . Derate linearly 100mwt"C
TEMPERATURE RANGE:
Storage -65 to +200 °c TERMINAL DESIGNATIONS
cO'
Operating (Junction) -65 to +200 °c
LEAD TEMPERATURE
(During soldering):
At c:jistanee;;' 1/32" from ceramif wafer for 10 sec. max. 230 °c I
I
~ ~
92CS·274S1 B
JEDEC TO-60
ELECTRICAL CHARACTERISTICS Case Temperature

TEST CONDITIQ"S LIMITS
DC DC DC
Characteristic Symbol Collector Base Current 2N2876 Units
Volts Volts (Mill i_res)
VC8 Vce V8E IE 18 IC Min. Max.
Co II ector-Cutoff Current
ICBO 30 0 - 0.1 JlA
Coil ector-to-8ase
8reakdown Voltage BVCBO 0 0.5 80 - V
Collector-to-Emi tter
8reakdown Voltage (Sustaining) 8VCED(sus) 0 500' 60 - V
8reakd_ Vol tage 8VCEV -1.5 0.1 80 - V
Emi tter-to-8ase Breakdown Vol tage BVE80 0.1 0 ~ - V

Fig. I • Region of safe operation (without
Collector-to-Emi tter second breakdown) in class A
Saturation Voltage VCE(sat)
500 2.5
amp
- I V
service for type 2N2876.
Feedback Capac i tance
(Measured at 140 KHz) Cb'c 30 0 - 20 pF
RF Power Out~ut, Unneutr.1 ized Pout
---
Measured .t 50 MHz 28 500 10·
50 MHz 28 375 W
150 MHz 28 275 3b
Go i n-Bandwi dth Product fr 28 250 200 (tyP.) MHz
Base Spread i n9 Res i stance lohms
28 250 6.0 (tyP.)
(Measured at ~ MHz) rbb'
Collector-to-Case Capacitance Co - 6 pF
"Pulsed. Pulse duration!:, 5 ,..seCi duty factor t:. I%. a For PIN =2 watts. b For PIN" 1 watt.
____________________________________________________________________ 419
RFPDWERTRANaSTORS ________________ ~ __--------_________________________________________
2N3229
Features:
Silicon N-P-N Planar Transistors • H,igh Power Output. Unneutral ized (POUT):
15 w min. at 50 MHz
For Large-Signal, High-Power, VHF Applications in Military and Industrial 5 w min. at 150 MHz
Communications Equipment
• High Voltage Ratings:
VCBO 105 volts max.
Vcn 105 volts max.
Maxltl.... Rating" Ab.$o~ute-Na:ci'll,"", Values:
VCEO 60 volts max.
CCllJ'.CI'()R-ro-BASE VOLTAGE. VCB). 105 volts T_A11ffiIl RANGE,
CCllJ'.CI'()R·TO-EMITIllR VOLTAIlE, Storage. . . • • _65 to 200
With base open, VCQ). . . . 60 volts Operating (Junction) -65 to 200 • 100 per cent tested to assure freedom
With VBE = ... 1.5 volts, VCEV. 105 volts LEAD TEMPEllAWRE from second breakdown inc I ass-A opera-
(During soldering):
EMI1TER-'IO-BASE \Q..TO, Vrro. volts tion at maximum ratings
au..EC1OR 0JnRENT. Ie. . . . 2.5 amperes At distances ...1 1/32" from
ceramic .afer-for
llWiSISI1JII D1SSIPATlCl'I. Pp 10 sec. max. • . • • . . • . . • 230 ·C
At case te~er.tures • Low Thermal Resistance (e J _ c ) -
up to "250 C. • • • • 17.5 watts
At case tomperatures high thermal-conductivity ceramic insu-
.bov.e 25° C. • . . . • Derate linearly 100 IDYl/DC lation between collector and mounting
stud
• Isolated Stud Package:

all three electrodes electrically iso-
ELECTRICAL CHARACTERISTICS Case Temperature = 25" C Unless Otherwise Specified 1ated from case-for des ign fl exi bi Ii ty
TEST COND IT! ONS heavy copper mounting stud-for effec-

t i ve contact wi th heat sink
DC DC OC LIMITS
Characteristic Sy.bol Collector Base Current Uni ts pin terminals arranged on a .200" pin-
Volts Volts (Mi II i ••per.s) circle diameter--fit commercially
V•• VCE VBE IE IB IC Min. Max. ava i 1ab 1e sockets
Collector-Cutoff wrrent leBO 30 0 . 0.1 I'"
Collector-to ..8a.se
Breakdown Voltage BVCBO 0 0.5 105 · volts TERMINAL DESIGNATIONS
Collector-to-Emi tter
BVCEO(sus) 0 500' 60 · volts
C~E
Breakdown Vol tage (Sustaining)
Collector-to-Fini tter
Breakdown Vol tag. BVCEV -1.5 0.1 lOS · volts
0.1 0 ·
'W
Fmitter-to-Base Breakdown Voltage BVEBO 4 volts
Collector-to-Emi tter 500 2.5 . 1 volt
Sa~uration Voltage
VCE(sat) .m.
B
Feedback Capacitance
(Measured at 140 kHz) Cb'c 30 0 - 20 pF
92C5-27481
RF Power Output, Unneutralized Pout JEDEC TO-60
Measured at 50 MHz 50 550 IS"
5b
- watts
150 'MHz. 50 250 · watts
Gain-Bandwidth Product fT 28 250 200(typ. ) MHz
Base-Spreading Resistance
(Measured at 400 MHz)
.' rbb ' 28 250 6. O( typo ) ohms
Collector-to-Case Capacitance Co - 6 pF
: Pulsed. Pulse duration f 5 ~sec; duty factor I:. ·1%.
For PIN = .2 .atts
b F:or PIN = 1 watt
COt..L~CTOIl-TO-E.ITTEil
.
VOLTS (YCE)-SO
C!SE TEMPER.TUM: 'Tcl.25-C
f--
" ........
• I.
iI
~
, .2 ""- ~
10 ,10 ......... N~
~
I
I
.so
,.
E•
&•
~ 2
0
"..~....... ~I"~
..... ~ r-
~,...
I"
,$
J 1"
I I
r---
Q5 I U
RF POWER INPUT (Pjl-WATTS
o. • 50 80 70 80 10 tOO
FREQUENCY-Me
ISO 200
teeS-12424
Fig. 1·,Region oj safe operation (without
second breakdown) io class A
Sflrvice . Fig. 2· Typical opeTlltiofl.&haracteristics. Fig. 3· Typical operation characteristics.
420 ______________________________________--------------------------
____________________________________________________________ ----------------RF~ERTRANSISTORS
2N3375,2N3553,2N3632
Features:
Silicon N-P-N Overlay Transistors • High Power Output, Closs.C Amplifier;
TYPE 400 MHz 260 MHz 175 MHz 100 MHz
For VHF·UHF Applications 2N3632

tOWTyp. 13.5W Min.
2N3553 2.5WTyp. 2.5W Min.

2N3375
2N3553 2N3375 2N3632 2N3553 2N3375 2N3632 3WMin. 7.5WMin.
COLLECTOR-TO-BASE • High Power Output, Oscillator:

VOLTAGE .. VCBO 6S 6S 6S V
TEMPERATURE RANGE: 2.5W (Typ.) at 500 MHz, (2H3375)
VOLTAGE: Storage & Operating 1_5W (Typ.) at 500 MHz, (2H3553)
With base open ..... VCEO 40 40 40 V (Junction) ........... -65 to 200 OC • High Voltage Ratings
With VBE = -I.SV .. VCEV 6S 65 65 V LEAD TEMPERATURE
(During soldering):
EMITTER-TO-BASE At distances~1/32 in. (.793 mm)from
VOLTAGE ........ VEBO 4 4 V insulating wafer (TO-60
COLLECTOR CURRENT: package) or from seating
Peak ...... ............. 1.0 1.5 3.0 A plane (TO-39 package)
Continuous ........ IC 0.33 0.5 1.0 A for lOsmax . , . . . . 230 TERMINAL DESIGNATIONS
TRANSISTOR
DlSSIPAnON ... PT
At case temperatures
up to 25 0 C ............ 7.0 11.6 23 W
At case temperature above 25° C. Derate linearly to 0 watts
at 2000 C
ELECTRICAL CHARACTERISTICS: At Case Tompera••r. (TC) = 2SoC

DC DC DC LEAD I - EMITTER
Characteristtc;: SYmbol Collector Base Current 2N3632 2N3553 2N3375 Units LEAD 2 - BASE
Volts Volts (Milliamperes) LEAD 3 - COLLECTOR, CASE
I. Min. ~ax. in. Max. Min. Max. 2N3553
Coliector·Cutoff Current ICED 30 .25 0.1 0.1 mA
Collector·ta-Base JEDEC TO·39
Breakdown Voltage V(8R1CBO 0.1 65
C~E
0.3 ~5 V
0.5 65
Collector·tn·Emitter VIBRICEO 0 Ota 2008 40b .,p 40'> V
Breakdown Voltage
-1.5 oto 200s 65 b 65 b 65 V
'W
VIBRICEV
Emitter-to·Base 0.1 0 4 V
VIBRIEBO
Breakdown Voltage .25 0
Coliector·to·Emitter VCE(sat) 100 500 V B 92C5-27481
Saturation Voltage 50 250
Collector-ta-Base Capacitance PIN I - EMITTER
C,bo 30 20 10 10 pF
Measured at 1 MHl PIN 2 - BASE
R F Power Output PIN 3 - COLLECTOR
Amplifier. Unneutralized STUO - NO CONNECTION
At 100 MHz 28 7.5c
175 MHz 28 13.5 2:59 2N3632
POE W 2N3375
260 MHz 28
10rp JEDEC TO·60
400 MHz 28
Gain·Bandwidth Product
'T 28 100
""
.. MH, All the pins of the 2N3632 and 2N3375 are electri-
28 150 400 ,!yP.l 5OO1tyP.1
5001typ.1
cally isolated from the case.
. I· .. I·1.,tYP.l
l~.lp.J
Base-Spreading ResiStance
Measured at 100 MHz 28 100 12.0
200 MHz 28
400 MHz
'bb
28
250
250
6:5(i~·1 ohms
apulsed through an inductor (25 mH); duty factor = 50%. e For PIE = 3.5 W; minimum efficiency = 70%.
COLLECTOR SUPPLY VOlTSIVCCI
bMeasured at a current where the breakdown voltage is f For PIE = 3.0 W; typical efficiency = 60%. CASE TEMPERATURE (Tel ~ 25- e
a minimum.
gFor PIE = 1/4 W; minimum efficiency = 50%.
CFor PIE = 1.0W; minimum efficiency = 65%.
dFor PIE = 1.0 W; minimum efficiency'" 40%.
O.5W) 13W1
IO.ISWI
....."., (0.1 wi (lOWI
so 60 .0 100
FREQUENCY l'I-MHz
Fig. I • Typical175-MHz amplifier chain for Fig. 2 - Typical 260-MHz amplifier chain for Fig_ 3 - Power output as a function of frequency
PDE of 25 to 30 years _ PDE of 10 watts_ for2N3632·
_______________________________________________________________ ~1
2N3375, 2N3553, 2N3632

COLLECTOR SUPPLY VOLTS tv ee ,. 28 t • 21
CASE TEMPERATURE (Tel' 25° c
I COLLECTOR SUPPLY VOlTS tVcc)=28
10 CASE TEMPERATUM (Tcl'2!5" C
C~LlECTOR SUPPLY VOLTS tVee
CASE TEMPERATURE ITel' 25' c
roo
• ; 600
-.6 ~ ~, ,;;;- "'1-- r- ~ .00

~
!
i V
'"
~ 4
--t-.ur".r~ r-
; )'"'-!.t;"o.• ...... ~ 400
~
o~
~
~ 2
~
;--.
I
~
'00
I 200 I
100 200 '0 75 100 150 200 250 300 3DO 400 100 150 200 250
000 400 '00
fREQUENCY (') -MHz FREQUENCY 1f)-MHz
COLLECTOR MILLIAMPERES Itel
92CS-128XlftI
Fig. 4· Power output as a function of frequency Fig. 5 - Power output as a function of frequency Fig. 6· Gain·bandwidth product as a function
for2N3375. for type 2N3553. of collector current for types 2N3632 .
COLLECTOR SUPPLY VOLTS tVeel' 281

CASE TEMPERATURE (Tel' 25' C
'600
I
£500
I--
~ ...........
~400
k
~
I'
;\
3
'00
150 200 250 20 40 '0 80 100 200 400
50 00 '00
COLLECTOR MILLIAMPERES tIe'
COLLECTOR MIL.L.IAMPERES (leI
Fig. 7 - Gain-bandwidth product as a function Fig. 8· Gain-bandwidth product as 8 function

of collector current for types 2N3375. of collector current for 2N3553.
422
2N3478
. t Features:
Silicon N-P-N Epitaxial Planar T ransis or. high galn.bandwldth pr.duct-
'T = 900MH. typo
For VHF/UHF Applications in Industrial and Commercial Equipment
• low noi .. flgur.
NF = SdB typo ., 470MH.
4.SdB ma •• al 2OOMH.
2.SdB typo al 60MH.
• high unneutrallud power gain
Maximum Rating •• Absolute-Moximum Values: Gp• = I1.SdB min. aI200MH.
CollectoMOooBase Voltage, VCBO' ••••••••••.•••••.•••......•..••.•.•.•... , . , ....•.• 30 V • hermetically nal.d fouraleod package
Collector.to-Emitter Voltap. VCEO •••.•...•.•.•.••.•.......•.•.•......•...........• 15 V • all active .Iements Insulated from ca ••
Emitter-to-Baae Voltage, VEDO ' ••.•........•.•.....•...••....•....•......•.•.. , . . .. 2 V • low collector..to.ba.e fHdbock
Collector Current. Ie ............................................. , ..... , ..... limited by dissipation capacitance, Ccb 0.7 pF max.
Transistor Dissipation. PT:
:::~~::e8 }::0:2::0~: ::::::::::::: . . . . :. . . . .': . . . . ::: . . . . . :. . :. ::.'.'.'::.': .~.... See Fi:o~

Temperature Ranle: TERMINAL DESIGNATIONS
Storage and Operatinl (Junction) -65 to 200
Lead Temperature (Durinl Solderin,):
At distances not closer than
1132"' to Bestin, surface for
10 seconds max .• 0 0 ••• 0 ••• 0 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •• 265
CASE
JEDEC TD·72
ELECTRICAL CHARACTERISTICS, At an Ambient Temperature: (TAJ .(2S"C

DC DC
ColI.cto,," Coll.cto .... DC DC
Frequency to_Bose to-E"litNr Emitter Collectof Type
Characteristics Symbols f Voltage Voltage Current Current 2N3478 Unit.
Vca Vee Ie Ic
MH. V mA mA Min. Typo Mox.
Collector..cutoff CUrrent ICBO 0.02 p.A
Collector-to-Base BV CBO 0.001 30 V

Breakdown Voltage
Collector-to-F:mitter BVCF.O 0.001 15 V

Areakdown Voltage
F.mitter-to-Base BVF.BO - 0.001 V

Areakdown Voltage
Static Forward-Current hFF. 25 150

Transfer Ratio
Magnitude of Small-Signal AMBIENT TEMPERATURE

Forward-Current hfe o 100 7.5 16
Transfer Ratio
Fig. I • Roling chari I.r typ. 2H3478
Collector-to-Base Ccb b 10 pF
F'eedba~k Capacitance
Small-Signal, Common-Emitter
Power Gain in Unneut,ralized Gpeo 200 11.5 17 dB
Amplifier Circuit
Small.Signal, Common-Emitter
Power Gain in Neutralized Gpeo, c: 47D 1.5 12 dB
Amplifier Circuit
IJHF Soise Figure NFO,C. 470 1.5 dB
VHF Soise Figure NF" 20D 4.5 dB

NFa.d 60 2.5 dB
(I Fourth lead {casel grounded. c: Source Resistance, Rs = 50 ohms.

bC('L is a three terminal measurement of the collector-to-base capacitance d Source Resistance, Rs '" 400ohms.
\\ith tnl" emitter and case connected to the guard terminal.
Fig. 2· Typical small.signal befa characte,istics

lor typ. 2H3478
___________________________________________________________________ 423
R.F POWER TRANSISTORS
2N3600
FeaturtJs:
SILICON N·P·N EPITAXIAL PLANAR TRANSISTORS • high goln-l>andwldtli product
• hermetically ••• I.d four-I,od ,ackoge
F. VHF Applicalions In Mlft." CDIIIRUlicatiills, l1li 1_lriai (l1li,1" • low leakage current
• high 200-MHz p_or gain
MAXIMUM RATINGS,Absolute-Maximum Valu.: 2143600
2N3600 • low nol.e Agur.
NF = 4.5 dB max. at 200 MH.
COLLECTOR-TO-BASE VOLTAGE,NcBO ' 30 V
COLLECTOR-TO-EMITTER VOLTAGE, VCEO • low collecto",to-base time constant
15 V
'b 'Cc = 15 pi max.
EMITTER·TO-BASE VOLTAGE, V EBO 3 V
COLLECTOR CURRENT, IC . • mA • high ,ower gain as neutralized amplifier
Gp. =17 dB min. at 200 101Hz
TRANSISTOR DISSIPATION, PT :
For operation with heat sink: TERMINAL DESIGNATIONS
At case J
up to 25°C . • 300 mW
temperatures*, above 25°C . •
For operation at ambient temcreratures:
At ambient {up to 25 C . 200
Derate at 1.71 mWtC
mW
8ffisKc
temperatures above 2SoC . Derate at 1.14 mW/oC E~
TEMPERATURE RANGE: CASE JEDEC TO·72
Storage and Operating (Junction) . -65 to +200 °c
t2cS-2151~
LEAD TEMPERATURE lOuring Soldering):
At distances;;' 1/16 inch from seating surface for 60 seconds max. JoO °c
• Limited by transistor dissiPation. •• Measured at center of seating surface.
ELECTRICAL CHAIIACJIRIITICI
Tm COIIDIl'IOIIS LMTS
CIIaracterislics ttUoll T........
I
..Va_.... VoI_
DC DC DC DC DC
AllblIIIt FIeqUIIIq CoIIICIGI- Collectllr· &i•. EIIIIIIr CoIIectIIr....
DC
.. EIII. fD..... QIrrInI CUIIInt carltll
~
TJIII
111_ Uoib
TA Vea VCE VE8 IE Ie 18

DC MHz V V V _A. iliA iliA llio. Typ. Max.
Coliectal-CUtoll Current 25 15 0 0.01 pit
leoo 150 15 0 1 pit
Collector-...... BVCOO 25 0 0.001 30 V
8reakdowrI Volt.
Collector-to-Ernltler BYCEo(SUS) 25 3 0 15 V
Ilrstainln. Vol"
EIIitler-Io-"" BVEOO 25 0.01 0 3 V
Breakdown Volt.
Collec\or·Io-Emitler Vcasat) 25 \0 1 0.4 V
Saluration VoH.
_1.. EIIltler VBElsaI) 25 10 1 1 V
Saluration Vo/hle
Static Forward COIIen!- hFE 25 1 3 20 150
Tr....ar Ratio
SlllaIl·$I&1\11 Forward
~I
100 6 5 15
CUlle"Hr.nsler Ratio· hie 25 1kHz 6 2 200
ComIIIon-Bsse OUI\1UI Cab 25 0.1101 0 0 pF
Capacitance"
Coliector·lo-.... Ctb 25 0.1 to 1 10 0 1 pF
Feedback Capacitance"
Cotmn·"" Inpul Cib 25 0.1 to I 0.5 0 l4 pF·
ClIJICitanc..
Collector-Io-aass !b'Cc 25 31.9 6 5 4 15 ps
Time Constant"
91.11·$11111 Power Gain
io Neutralized CoII.on- Gpe 25 200 6 17 24 dB
Emitter AnlDliliar Circuit" 5
Or.,...
Power 10 CDnIIIIon-
Eaitter Osc:illatur Cir·
Cli" (Sle Fia..5)
Po 25 ~500 \0 12 20 -,
Nose FIIIIII·· IF 25 200 6 1.5 4.5 dB
Noise Fi....... IF 25 60 I 1 3 dB
1_ . . .__
...._
...,_"'_. .
• LAoIIIIo.4 (c..., n......
• LAoIIIIo.4 (c...' " " , -
~nw_InoI_O/""'I
_ .. c......... • - - - - (I!i"- ......
424
____________________________________________________________________________ RF POWER TRANSISTORS
2N3733
Features:
10-W, 400-MHz Silicon N-P-N Overlay • High power output, unneutralized aau C amplifier:
... 400 MHI 10 W min.
Transistor ..... -
• Hi. voltage Mings:
14.5 W IVp.
For Large-Signal, High-Power' VHF/UHF Applications
VeRO· 86 V max.
MAXIMUM RATINGS, Absolute-Maximum Value.: VCEV' 65 V mex;
VCEO • 40 V mex.
'COLLECTOR·TO-BASE VOLTAGE •.•.. " ••.. , .•.••.• ,.... VCBO 65 V
• 100 per cent telted 10 anura freedom from second
COLLECTOR·TO·EMITTER VOLTAGE: breakdown for operation in Class A applications
With base-emitter junction reverse-biased (VSE = -1.5 VI . . . . . . . . .. VCEV 65 V
·With base open ..................................... VCEO 40 V • low thermal reJistanc:e
CO
'EMITTER·TO-BASE VOLTAGE ••.•..••..•..••......•..•• VEBQ V TERMINAL DESIGNATIONS
'COLLECTOR CURRENT:
COntinuous ........................................ Ie A
Peak .......................................... .. 3 A E
'CONTINUOUS BASE CURRENT .•.••.•••.••••.••..•••.••• IB A I
At case temperatures up to 2SoC ......................... . 23 W
At case temperatures above 2SoC ......................... . Derate linearly to 0 watts at ~ '"
2oo·C 92CS-27481 a
'TEMPERATURE RANGE: JEDEC TO-80
-6510200 ·C
Storage and operating Uunction) ......................... .
~~E~-:~~~;~:ET~R ~:~8C IYCE )·21
'LEAD TEMPERATURE (During soldering):
At distances;;;a, 1/32 in. (0.8 mm) from insulating wafer for 10 $ max .. . 230 ·C ,.
ELECTRICAL CHARACTERISTICS, At Ca", TemporatUl'll ITCI =25·C unl... otherwise $pOCif;.d
TEST CONDITIONS
VOLTAGE CURRENT
CHARACTERISTIC SYMBOL LIMITS UNITS
Vde mAde
VCB VCE VBE IE IB IC MIN. MAX.

With base open ICEO 30 0.25
With base-emitter june-
ICEV 65 -1.5 mA
tion reverse-biased
AtTC 200·C 30 -1.5 10 ZOO 250 300 3150 400 4150 1500 &00 100 100
FREQueNCY - MHz
With emitter open ICBO 65 0.5
HCS·J)I)4
Emitter Cutoff Current lEBO .... 0.25 mA
Fig. I - Power outout as a function of frequency.
,-
Collector-to-Base
Breakdown Voltage VIBR)CBO 0 0.5 65 V COLLEc:TOR-TO-EMITTER VOLTS {VeE'- 28
CASE TEIllllPERATURE {Tel- 215- C
Collector-to-t:mittet 100
Breakdown Voltage:
With base-emitter junc- -1.5 0102O()e 65" V
tion reverse-biased
VIBR)CEV
~ 000 r-..
Emitter-to-Base
Breakdown Voltage
VIBR)ESO 0.25 0 V
I 4CO
V '\..
II
""
Sustaining Voltage: VCEO(sus) 0 200 <10
With base open
V
With external base-to- ,
emitter resistance VCER(sus) 200 <10
IRSE) = 100 n
DC Forward Current 5
Transfer Ratio hFE 0.25 10 150
"""• 00 100 110 200 iIOO
VCEI ... ) 200 1000 V
Saturation Voltage
Fig, 2 - Gain-bandwidth product as a
Base-Emitter Voltage VBE 1000 1.5 V
function of collector current.
Emitter, Small-Signal, 2B 250 2.5'
Short-Circuit Forward Ihfe'
Currftnt Transfer Ratio 28 250 4.0 (lVp.)
(f=lIjOMHz)
,
Collector-to-Base Capacitance JO
Cob 2B 250 25, pF
(I = 0.1 to 1 MHzl
Available Amplifier Signal
Input Power W
Pi
PD "_10W,Z9" 50n,
f '" 400 MHz
Collector Circuit Efficiency
po" 10W,ZG"50n,
I" 400 'MHz
~C 46
" ,.
8ase-Spreading Resistance
rbb 28 ,250 8.51t.p.1 n
Measured at 200 MHz 10 15 20 2e 50 35 40-
Collector-to-Case Capacitance C, 16 pF COLLECToR-TO-1ASE YOL.TS (Ycal
'Thermal Resistance
RsJC .5 ·CIW
(Junction-to·Case) Fig_ 3 - Variation of collector-to-base
• Pulsed through an Inductor (25 mHh duty facto, '" 150% -In accordanell wlth JEDEC lWgittratlon dal8 capacitance•
"Measured at a current whare the braekdown voltage is a minilmlm
425
RFPOWERTRANSISTORS _________________________________________________________________________
2N3839
Features:
SILICON N·P·N EPITAXIAL PLANAR TRANSISTOR • very low device noise figure -
!IF = 3.4 dB mo •. os 45O.MH. omplilier
For Low-Noise UHF Applications in Industri31 l1li Milit.y Equipment • high gain-bandwidth product -
IT =1000 MH. min.
• high con ••rt.r (450·10·30 MH.) goin _
Maximum Ratings, Absolute-,\fa.rimum Values:
Gc =15118 typo for circuit bandwidth of approximately
COLLECTOR-TO-BASE VOLTAm;. VCRO 30 V 2MH.
COLL~X'TOR-TO-E~IITTER
• hi Slh power gai n as n."tral i zed ompl ifier _
VOLT Am;. \'CEO ... . . . . . . . . . . . I!; V Gp• ::: 12.5 dB min. at 450 MHz for circuit bandwidth
E~IITTER-!O-BASE VOLTAGE. V~;RO . . . . . 2.5 V 0120 MH.
COLLECTOR CURRENT. IC . . . . . . . 40 rnA • high power output as UHF oscillator-
TRANSISTOR IJISSIPATlON. PT: p. =30 mW min., 40 mW typo ot 500 MH.
For operntion with hent ~ink: =20 mW typo at 1 GH.
At (.'Rse {up to 25°C. . . . . . . . . .. 300 mW • low collector.to·base time constant-
tE'mpE'ratures** above 2fioC .. ',' .. Derutc ut, 1.72 mW/oC 'b ICC =7 PI typo
For operation ut umbient temPf;'rntures: • low collector. fa· base feedback capacitance -
At Ilrnbient {up to 25°C. . . . . . . . . . . 200 rnW Ccb =0.6 pF typo
temperatures abovE:> 25°(; . . . . . . Derutl' ul 1.14 mW/oC TERMINAL DESIGNATIONS
TEMPERATURE RANGE:
Storage and Opernting (Junction) . . . . . . . . . 65 to +200 0('
LEAD TEMP~;RATliRE (During Soldering):
I~
..• ,. C
At distances L 1132 inch from seating E~

surface for 10 seconds max. . . . . . . . . . .. 26.'; ()C CASE
92CS-27513
JEDEC TC).72

DC DC DC DC DC DC
COLLECTOR· COLLECTOR· EMITTER· EMITTER BASE COllECTOR TYPE
CHARACTERISTICS SYMBOL FREOUENCY TO-BASE TO-EMITTER TO·BASE CURRENT CURRENT CURRENT UNITS
2N3839
VOLTAGE VOLTAGE VOLTAGE
f VCB VCE VEB IE IB IC
MHz V V V rnA rnA mA Min. T~p. Max.
Coliector·Cutoff Current
TA = 250C 15 0 10 nA
TA = 1500 C ICBO IS 0 1.0 "A
Collector·to-Base 0 0.001 30 V
. Breakdown Voltage BVCBD
Collector·to-Emitler 0 3 IS V
BVCEO
Breakdown Voltage
Emitter·to-Base 0.01 0 2.5 V
Breakdown Voltage BVEBO
Static Forward Current· I 3 30 150
Tr",sfer Ratio hFE
Small·Sigrlal Forward.
Current·Transf.er Ratio
hfe
0.001'
100'
•• 2
5
50
10
220
20
Collector·to-Base Ccb 0.1 to 1.0b 10 0 0.• 1.0 pF
Feedback Capacitance
Input Capacit",c. Cib 0.1 to 1.0 0.5 0 1.4 pF
Collactor·to-Base 31.9' 6 ·2 I 7 IS ps
rb'Cc
Time Conslant
Small·Signal, Common·
Emitler POWilr Gain In Gpe 450' 6 1.5 12.5 19 dB
Neutralized Amplifier
Circuit
Power Output as Oscillator L500a 10 ·12 30 mW
Po
UHF Measured Noise Figure NF 450"d 6 1.5 3.9 dB
UHF Device Noise Figure NF 450"d,f 6 1.5 3.4 dB

VHF Measured Noise Figure NF 60"· 6 I 2 dB
a Lead No.4 (case) not connected. • Generator "IIIIMC8, Ra '" 4~0 ohms.
b 3-termln.1 measurement with emitter and case connected to luard
terminal. f Device n.Q.lse filll,e II approximately 0.5 dB lower than the mell--
c Le.s No.4 (case) Founded. lured nolle figure. The IIHterence II due 10 the Insertion lossat
d Generator reslslance, Ra: = 50 Ohm •. :rld~f~~ :::'. ~'~:I=~ta~'u2p5 (~~J5a::).the contflblJtlon of the
426 ___________________________________________________________________
____________________________________________________________________________ RF~ERTRANSISTORS
2N3866
Features
Silicon N-P-N Overlay Transistor • High Power Gain. Unneutralized Class C Amplifier
1 Woutput .t4OO MHz (10dB gainl
High-Gain Driver for VHF/UHF Applications in Military and Industrial 1 W output at 250 MHz (15 dB gainl
1 W output at 115 MHz (11 dB gainl
Communications Equipment 1 W output at 100 MHz (20 dB gainl
• Low Output Capacitance
Cobo =3 pF me••
MAXIMUM RATINGS, AbsollJrtl-Milllimum Values:
.. COLLECTOR-TO-BASE VOLTAGE. , . VeBO 55 v
• CONTINUOUS BASE CURRENT ....
.. TRANSISTOR DISSIPATION
I. 0.' A
VOLTAGE: ",.
Wjtl'! external base-to-em itte, At case temperatura up to 25°C .. W
resistance lASE) = 10n.. , ... ..VeER 55 V At case temperatures above 25°C See Fig, 2.
-TEMPERATURE RANGE:
With base open . .. ",VCEO 30 V
Storage &; Operating (Junction) . .. -65 to +200 OC
.. EMITTER·TQ..BASE VOLTAGE "VEBO 3.• V .. LEAD TEMPERATURE
.. CONTINUOUS COLLECTOR At distances> 1116 in. (1.58mm)
CURRENT ............... . ..... Ie D•• A from seatingplane for 105 max . .... 230 ·C JEDEC TO-39
COLLECTOR SUPPLY VOL.TAGE IVecl" 28 It

CASE TtMPERATUR£ nCI"2~·C
ELECTRICAL CHARACTERISTICS, MCase Temperature (Tci = 250C

STATIC
TEST CONOITIONS
DC DC
CHARACTERISTIC SYMBOL Voltage Current LIMITS UNITS
(VI (mAl
VCE VEB IE 'B IC Min. Max.
* Ieo"ector-Cutoff Current:
Base-emitter junction reverse biased 'CEX 55 1.5 - 0.1
mA
Tr." 2000C 30 1.5 0.1
Base open .ICEO 28 0 - 20 JJ.A
!collector-to-Base Breakdown Voltage V(8RICBO 0 0.1 55 - V
* Coltector-to-Emitter Breakdown Voltage: Fig_ I - Power output as a function of
With base open 'VIBRICED 0 5 30 - V
frequency_
With base connected to emitter through
l0-0hm resistor V(8RICER 0 5 55 -
* Emitter-to-Base Breakdown Voltage V(BRIEBD 0.1 0 3.5 - V
* Emitter-Cutoff Current lEBO 3.5 - 0.1 mA
* Collector-to-Emitter Saturation Voltage VCE(..tl 20 100 - 1.0 V
* DC Forward-Current
Transfer Ratio
hFE
5
5
360
50
5
10 200
-
Thermal Resistance:
(Junction-to-Case) eJ-C - 35 oCIW
DYNAMIC
LIMITS
TEST & CONDITIONS SYMBOL FREOUENCY UNITS
MHz MINIMUM MAXIMUM
Power Output (VCC - 28 VI:
POE 400 1.0 - W NCS-10448R4
P'E-0.1W Fig. 2 - Dissipation derating curve_
Large-Signal Common-Emitter Power Gain (Vce '" 28 V):
P'E-0.1W
GpE 400 10 - dB
10008
··
CASE TEMPERATURE (Tcl.1OO·C
Collector Efficiency (V CC = 28 V):
PI E '" 0.1 W, POE'" 1 W.Source Impedance;; 500 ~C 400 45 - % C Ie MAX.
E
* Magnitude of Common-Emitter, Small Signal, Short-Circui I
Forward-Current Transfer Ratio
'C-50 mAo VCE -15 V
Ihle I 200 2.5 - ~
1100
· " ~/2°iCTE!PERlTlE
HOT JPGT
* AvailabJe Amplifier Signal Input Power. POE;; 1 W, Source

Impedance:: 50n
Pi 400 - 0.1 W B • "--NOTE: T"8 IS DETERMINED BY
V
! . ~ UIIE Of' IN'''ARED
~ ·
* Common-Base Output Capacitance (Vce;; 28 V) Cobo 1 - 3 pF SCANNING TECHNIQUE
· . . .. . . ..
• In accordance with JEDEC registration data format JS-6 RDF-3 We,o MAX •
10
10 100
COLLECTOR-TO-EMITT£R VOLTAGE (YCE)-Y
Fig_ 3 - Safe area for dc operation_
427
RFPOWERTRANSISTORS ____________________________________________________ ~ ______________________
2N4012
Features..
High-Power Silicon N-P-N Overlay • 2.5 W output with 4 dB conversion gain (min.)
as tripler to 1 GHz
Transistor • 3 W output with 4.S dB conversion gain (typ.)
as doubler to SOO MHz
For Applications as a Frequency MUltiplier • High voltage ratings
Into the UHF or L-Band Range • Freedom from second breakdown
MAXIMUM RATINGS,Absolute-Maximum Values: TRANSISTOR DISSIPATION: Pr TERMINAL DESIGNATIONS

At case temperatures up to 250C 11.6 W
COLLECTOR-TO-EMITTER VOLTAGE: 5_
C~E
At case temperatures above 25°C .. See Fig.
With base open ............ VCEO 40 v TEMPERATURE RANGE:
With Vee = -1.5 volts...... VCEV 65 V Storage & Operating (Junction) ••.•. -65 to +200 °c
COLLECTOR·TO·BASE VOLTAGE. . .. Vcao 65 V LEAD TEMPERATURE lOuring soldering):
EMITTER·TO-BASE VOLTAGE VEBO V At distancesL 1/32 in. (0.8 mm) from
°c
W
COLLECTOR CURRENT Ie 1.5 A insulating wafer for 10 5 max. 230
JEDEC TO-60
ELECTRICAL CHARACTERISTICS, Case Temperatur. = 250C
TEST CONDITIONS
DC DC DC
CHARACTERISTIC SYMBOL Collector Base Current LIMITS UNITS
Volts Volts (Milliamperes)
VCB VCE VBE IE IB IC Min. Max,
Collector-Cutoff Current ICEO 30 0 - 0.1 mA
Colleetor-to-Base Breakdown
Voltage BVCBO 0 0.1 65 - volts
Collector-to-Emitter BVCEO 0 o to 200a 400 - volts
Breakdown Voltage BVCEV -1.5 o to 200. 650 - volts
Emitter:to-Base BVEBO 0.1 0 4 - .\Iolts
I
Breakdown Voltage OUTPUT FREQUENCY {loutl-Ge/s
Collector-to-Emitter VCEls.tl 100 500 - 1 volt

Fig. I - Output power as a function of
Saturation Voltage
- outJ)ut fr~uency.
Colleetor-to-Base Capacitance Cob 30 0 10 pF
FREQUENCY - LMels
CASE TEMPERATURE !TC'-25·C
R F Power Output
Tripier At 1002 Me/s POUT 28 2_5e
Doubler At 800 Me/s 28 3.0d Ityp.1 watts
Gain-Bandwidth Product IT 28 150 5001typ.1 Mc/s
Collector-to-Base
Cutoff Frequencye Ic 28 0 25ltyp.1 Gels
Pulsed through an inductor (25 mH); duty factor'" 50%_ e Cutoff frequency is determined from Q measurement at 210 Mc/s.
Measured at a current where the breakdown voltage is a minimum. The cutoff frequency of the collector-to-base junction of the trans-
e For PIN'" 1.0 W; at 334 Mc/s; minimum collector efficiency'" 25%. istor, fe = a)( 210 Mc/s.
d For PIN'" 1.0 W; at 400 Mc/s; typical collector efficiency'" 35%.
60 70
COLLEcTOR-TO-BASE VOLTS (Vcel
Fig. 2 - Collector-to-base capacitance

as a function of collector~to~
•
base voltage .
ICASE TEMPERATURE (TC'· 25"C
ICURVE A; OOUBLER
CURVE 8: TRIPLER
:1. Ij~rl: CURVE C; QUADRUPLER
:':1 1717"·
I: 2
RF POWER INPUT (Plnl-WATTS (334 Mel,)

OUTPUT FREQUENCY (louti-Ge/, tASE TEMPERATURE--C
Fig, 3 - Power output as a function of Fig_ 4 - Power output as a function of

power input. collector supply voltage Fig. 5 - Dissipation derating curve.
428 ______________________________________________________________________
____________________________________________________________________________ RF~ERTRANSISTORS
2N4427
Features:
Silicon N-P-N Overlay Transistor • 1 W output with 10 dB gain (min.) at 176 MHz
High-Gain Driver for VHF-UHF Vee' 12V

• 0.4 W output with 5 dB gain (typ_) at 470 MHz
Vec= 12V
• COLLECTOR-TO-BASE VOLTAGE ... VCBO 40 V
• COLLECTOR-TO· EMITTER VOLTAGE:
With base open ...................... . VCEO 20 V
• EMITTER·TO·BASE VOLTAGE .............. . VEBO V
• CONTINUOUS COLLECTOR CURRENT .. IC 0.4 A
• CONTINUOUS BASE CURRENT .... IB 0.4 A
• TRANSISTOR DISSIPATION: ~ JEDEC TO-39
At case temperatures up to 100°C. W
• TEMPERATURE RANGE: COLLECTOR ~Y VOLTAGE I'/cCI-12 V
-65 to 200 ·C CASE TEMPERATURE 1Te.-25* C
Storage & Operating (Junction) .............................. , .
1.8
... LEAD TEMPERATURE (During soldering):
·C
At distances? 1/32 in. (O.S mm) from insulating wafer for 105 max .. .. 230
, I."
::;: ~
... In accordance with JEDEC registration data format JS-6 RDF-3. 1 1.2
-.. ~ ::::::: :::-...
~ 1.0
......
I 0.8
0 .•
~~ A
"1'.,.
I"'" ~~""
ELECTRICAL CHARACTERISTICS, At Case Temper.ture (Tcl = 25°C.
TEST CONDITIONS
i 0_4
~~
~~
~ 0.2
.oe DC
0
~I!8
Characteristic Symbol Voltage Current Limits Units
'" 00 200 '00
IV} ImA} "'" 600
FREQUENCY If I-MHz
VBE VEB VCB VCE 'E 'B 'C Min. Max.
'" Collector-Cutoff Current: Fig. I - Power output 8S 8 function of
With base open ICED 12 0.02
rnA frequency,
reverse·biased -1.5 40 0.1
'CEV
-1.5 12
'" Emitter-Cutoff Current lEBO 0.1 rnA
Collector-to-Base Breakdown
VIBR}CBe 0.1 40 V
Voltage
* Collector-to-Emitter Sustaining
Voltage:
With base open VCEO(sUS) 20
V
VCER(SUS) 40
resistance (RSE) = lOn
VIBR}EBC 0.1 V
Voltage
* Collector-to-Emitter
VCE(sat) 20 100 0.5 V
Saturation Voltage
* DC Forward Current
Transfer Ratio
hFE
360
100 10 200
RF POWER INPUT "IEI-M.
....-..
* Magnitude of Common· Emitter Fig_ 2 - Power output as a function of
Small-Signal, Short-Circuit power input at 175 MHz.
15 50 2.5
Ratia (f "" 200 MHz)
COLLECTOR SUPPLY VOLTAGE ( VcC'·12V
* Collector-ta-Base Capacitance
12 pF FR£QUENCY(f)... 10 MHz
If= 1 MHz} Cob 0."
RF Power Output ,
Class C Amplifier, 1 0 .35
Unneutralized (f '" 175 MHz, 12 ~
POE W
PIE = 0.1 W'"C~ 50%} (Vee} ~ 0.3
• Available Amplifier Signal

~6 0 .25
Input Power If::; 175 MHz, 12
P; 0.1 W ~
IVee}
POE = 1 W. ZIN = 50 QI
I 0.2
_4
* Collector Efficiency
12
"
Q:" 0.1'
(f = 175 MHz, POE"" 1 W, 50 %
IVce} 0.1
ZIN=50QI
40 10 eo 90 100 110 120 130
Thermal Resistance
RF POWER INPUT (PLEI-mw
Junction-to-Case 50 ·e/W HLI-11I1
• In accordance with JEDEC registration data format JS-6 RDF-3. Fig. 3 - Power output as a function of
power input at 470 MHz.
_________________________________________________________________ 429
RFPOWERTRANSISTORS ____________________--------------______________--------------___________
2N4440
Features:
Silicon N-P-N Overlay Transistor • 5 W output min. at 400 MHiE
For Class A. B. or C VHF/UHf- • 6.6 W output typo at 225 MHz
Military and Industrial Communications Equipment
CQ
TERMIIIIA L· DESIGIllATIONS

. E
"COLLECTOR·TO·BASE VOLTAGE. . . • • • . • . . . • . . • . . . . . . • . • . • •. VCBO 65 V I
"COLLECTOR·TO·EMITTER VOLTAGE:
With base-emitter junction reverse-biased (VSE) = -1.5 V .... , . ~ .... .
VC~ 65 V
* Wit~ base open .. , .................................. . VCEO 40 V
~ ,
"EMITTER·TO·BASE VOLTAGE •..••....••..•.•........•..•• VEBO V B
"CONTINUOUS COLLECTOR CURRENT ••..•..•........•....•• IC 1.5 A 'l2CS-274a1
"CONTINUOUS BASE CURRENT IB 0.2 A
"TRANSISTOR OISSIPATION": IT JEDEC TO-6O
At case temperatures up to 25°C 11.6 W
At case temperatures above 25 c C See Fig. 2 CDLLECTOR-TO-EMIT'TER VOLTS (VCE .-21
'TEMPERATURE RANGE:
Storage and operating (junction) • • . • • • . . • . . . . • . . • • . . . • . • . . . . . -65 10200 "C ··J ..••, ~~~~r::~":'TlM~T~~! ~~'.C
·.
LEAD TEMPERATURE (During soldering):
At distances;> 1/32 in. (0.8 mm) from insulating 'llVaferfor 105 max ....
ELECTRICAL CHARACTERISTICS, At Case Temperature (TcJ = 25"C unless otherwise rpet;'ified

230 "C J.
~
~·•
I
......... .........
.......... ....'
~ t"-
.
.........'.
VOLTAGE
Vd.
TEST CONDITIONS
CURRENT
mAde
LIMITS UNITS
i·
~
VeB VeE V BE .'. 'B 'e MIN. MAX.

1
Collector Cutoff Current: 100 • 1000
With base open ICEO 30 0.1
Withbase·emitterjunction NLI-IS7UII
rewr~e-biilsed
EE -1.5
ICE V mA Fig, I - Typical power output as a function
..
At TC" 200GC :>J -1.5
of frequency.
Emitter Cutoff Current lEBO 0.1 mA
Collector-to·Base
Breakdown Voltage V(BR)CBO 0.1 65 V
Collector·lo·Emitter
Breakdown Voltage:
With base.emittel' junction V(BR)CEIJ -1.5 010200· 65" V
reverse-biased
Emitter·to-Base 0.1
VIBR)EBO
Breakdown Voltage
Sustaining Voltage:
VCEOlsud 200" 40
W.thbaseopen
Wllh elCternal base-to-
emitter resistance VCERbus) '00" 40
(R BE ) = looU
DC Forward Current 1350

Transfer Ratio hFE 125 10 200
Collector-Io-Emitter
VCE(sat) EO 250 V
Saturation Voltage HC.-II:4"
Magnitude of Common- Fig. 2 . Dissipation derating chan.

Emitter, Small-Signal.
Short-Circuit Forward
Current Transfer Ralio
If '" 100 MHz)
Ihiel 'S
'" 4'
51typJ
COLLECTOR SUPPLY VOLTA'E (VCC»-II v
CASE TEMPERATURE (Tel- 215- C
Collector-to-Base Capacitance
12' pF
H = 1 MHz) Cob 'B
" II
Available Amplifier Signal
Input Power
1.7 W
.".
" .........,
i
(Po = 5 W. ZG = 5On. p,
f,. 400 MHz) r-....
I
Collector Circuit Efficiencv
45
(Po=5W.ZG=SOU,
f .. 400 MHz)
"C
"
Base-Spreading Resistance
rbb' 'S 250 10 (typ,) n
Measured at 200 MHz
COllector-to-Case Capacitance
Thermal Resistance
e,
ROJC I.
.F
"CJW
* 20<
100
COLLECTOR CURRENT lIe )-mA
"0 200 200 300
(Junction-la-Case)
"Pulsed through an Inductor 126 mHI. duty factor·!m% "'Secondary breakdown considerations limit maximum de operating
Fig. 3 - Typical gain-bandwidth product
•• Measured al a current whl!te the breakdown voltag8 Is a minimum
"'n 8ccordanee with JEDEC reglstretion dillil.
conditions••.contact your RCA Representatiw for SP8ciflc data_ as a function of collector current.
430
________________________________________________________________________ RFPOWERTRANSISTORS
2N4932, 2N4933
Features:
Silicon N-P-N Overlay Transistors Operation From a Power Supply of _
13.5 yol .. (2N4932)
For International VHF Mobil. and Porta!»l. Communication, ~66 to 88 MHz 24 yol" (2N4933)
Pow., Output (Min.) at 88 MHz
12 watts (2N4932)
20 watts (21U933)
RATINGS Load Protecti on
CO
Maximum Ratingl, AlHIU,llte-MaximLlm ValLUls:
High Voltage Rotln,.
2N4932 2N4933 2N4932 2N4933 TERMINAL DESIGNATIONS
COLLECTOR-TO-BASE
VOLTAGE •••••• ,' •••• VCBO 50 70 V RF INPUT POWER. . . • . . •. Pin
COLLECTOR-TO-EMITTER At 88 MHz ••••••.••••.•••••••• 3.5 W
VOLTAGE: TRANSISTOR DISSIPATION.. P T E
With base open ••••••••• 25 35 V At case temperatures up to 25° C. • • . • • 70 W
With V SE = -1.5V •••••.• 50 70 V TEMPERATURE RANGE:
I
EMITTER-TD-BASE VOLTAGE 4.0 V Stor8p " Operating (Junction) •••• -65 to 200 °c
COLLECTGR CURRENT: LEAD TEMPERATURE (During soldering):
~ ~
Peak. • . . . . • . • . . • . • . • . . . . . . . • 10 A At distances ~ 1/32 in. from
Continuous . . • • . . • • • •. Ie 3.3 A insulating wafer for 10 8 max ••••••• B 92C9-274SI
JEDEC T0-60
'ELECTRICAL CHARACTERISTICS FOR 2N4932

Cas. Temperature = 250 C
TEST CONOITIONS
OC DC DC
Charact.rlstic Symbol Collector Ba •• Current Limits Units
Volt. Volts (Milliamp.r•• )
Vca VCE VaE IE la IC Min.. Max.
ICED 15 0 1.0 rnA

Collector-Cutoff Cunent
ICBO 40 0 10 rnA
Collector-f.o.-Emitter VCEV(sus) -1.5 200- 50 V R, POWER INPUT (PjN)-WATTS '2LS-15I'1"

Breakdown Voltage 0 Fig. I . Typical power output as a function
VCEO(sus) 200- 25 V
of power input for the 2N4932.
Emittel'-to--Balte BV EBO 10 0 4 V
Breakdown Voltage
Collectol'-to-BRse 15 0 120 pF
Capacitance Cob
RF Power Output 12" w

Pout
ELECTRICAL CHARACTERISTICS FOR 21U933

Case Temperature = 250 C
TEST CONDITIONS
DC DC DC RI' POWER I"*"UTIPINI- WATTS

Charact.ristlc Symbol Call.ctor Ba .. CurNn' Limits Uni.s tlU-1311
Volt. Volt. (Mllllamp.r•• ) Fig. 2· Typical power output as a function
VeE VII IE Min. Mo". of power input for the 2N4933.
Vea 'a Ie
ICEe 30 0 1.0 rnA

ICBO 50 0 10 rnA
VCEV(susl -1.5 200' 70 V

Breakdown Voltase VCEO(susl 0 200" 35 V
Emitter-to-Base
Breakdown Voltage BVEBO 10 0 4 V
Collector-to--Base 30 0 85 pF
Capacitance Cob
RF Power Output
Pout
°Pulsed throUSh an inductor (25mB). duty factor = 50%

bFor Pin "" 3.5 W, at 88 MHz; Vee' eo 24V. minimum efficiency"" 70%
20b W
.0 '0 .
INPUT FREQUENCY (fIn t -MHz
'0
NL.-IIID
cFor Pin'" 3.5 W. al88 MRlt; Vee ,.. 13.5V. minimum efficiency'" 70% Fig. 3· Input derating curve.
431
RFPDWERTRANSISTORS _________________________________________________________________________
2NS070
F••tum:
Silicon N-P-N Overlay Transistor • SuiUlbl. for ..... A or clan B amplilier•
• 2E W PEP output min. at 30 MHz with
For High-Frequency Single-Sideband Communications Equipment 8lin: 1.3da
~: 40lI min.,
IMD: 30 dB mo•.
a Low thermal ruittlnce
MAXIMUM RATINGS,AbsoluIO-M""imum V./USB:
"COLLECTOR-To-SASE VOLTAGE ........................ VCSO B5 V TERMINAL DESIGNATIONS
C'fttE
COLLECTOR·TO-EMITTER VOLTAGE:
With _-emitter junction reverse-biased (VSE) • -1.5 V •••••.• VCEV B5 V
Wlt~ extemal.baseato-emitter resistance (RBE) = 50 .......... . VCER 40 V
I: With base open ....................................... . VCEO 30 V
"EMITTER·To-SASE VOLTAGE ......................... . VEBO 4 V
"COLLECTOR CURRENT:
Continuous ......................................... .
Paak ............................................. ..
"CONTINUOUS BASE CURRENT ..........................
IC
Is
3.3
10
1
A
A
A
'W 8
'ZCI-2MII
"TRANSISTOR DISSIPATION: Py
At case temperatures up to 2SoC ......................... . 70 W ....DECTO-$O
At case temperatures above 25°C ......................... . Sao Fig. 2
"TEMPERATURE RANGE:
Stor.ge .nd operating (junction) .•.• , .................... . -65 to 200 ·C
"LEAD TEMPERATURE (During soldering):
At distances ;;. 1/32 In. (0.8 mm) from Insul.~nD wafer lor
10 s max •••••••••••••••••••••••••••••••••••••••••• 230 ·C
·In 8CCOI'dince with JEDEC registration datil
ELECTRICAL CHARACTERISTICS, At ea. T."",.,.turB ITcia 25" C unlesa 0-. rptC/flMl ! 10

i"
STH ORDEIt
TEST CONDITIONS
7T.......
LIMITS
VOLTAGE CURRENT
CHARACTERISTIC SYMBOL UNITS 110
Vca VCE
Vdo
VaE IE
mAd.
la Ie MIN. MAX.
ItF I'CIIEI OUTPUT (Pout) - • (PEP)
.
Collactor Cutoff Current:
Witt:- b81e..mitter junction Fig. I - Typical intermodulation distortion 8$
ravena,blased fio -1.5 - 10 a function of rf power output.
AtTc = 150· C
With emitter open
ICEV
ICBO
50
50
-1.5
0
-- 10
10
mA
With base open ICEO 30 0 - 6

lEBO 4 - 10 mA
Sustaining Vo1tage:
reve....bl.sad
VCEV(sus) -1.6 20()1 B5 -
V
With base open VCEO("') 0 20()1 30 -
With external base-'tcH'mltter
resistance (RBE) =611
VCER(sus) 20()1 40 -
Emitter-to-BII8
Breakdown Voltage V(BR)ESO 10 4 - V
DC Forward Current 6 3000 10 100

hFE
Transfer Ratio 6 1000 20 - _ _TlIIECTCI-'"
Magnitude of Common-Emitter ,as-1182Rt
Fig. 2 . Dlulpation derating chart.

Sm.lI-Slgnal Short-CIrcuit
Forward Current Transfer IIIfeI 16 1000 2 -
Ratio (f· 60 MHz)
.... 111'""''''''' ITcJ'lOO"
Output Copacitan.. (I • 1 MHz)
AVlila~, Amplifier
Cob 30 0 - BE pF
~
I
I.
.f-->c......
""'TTj_
a ~"7rtf
....OF _ _
Signallnout Power
... -
1.2E
PEP
W ;r
V-SPOT
ZG = 5011, Po = 26 W(PEP)
11 • 30 MHz, 12' 30.001 MHz
I TEllP!MnJI!:
CT"'I)·Z~C
0
Intermodulation Distortion
ZG • &OIl, po· 25 W(PEP) IMD - 30 .dB B ··
I
1
11 - 30 MHz, 12 • 30.001 MHz
Collector Eff1clenCV
Zo • &OIl, Po' 26 W(PEP) -
~
•
· .....
......
11 ·30 MHz, 12' 30.001 MHz
Tharrnal Rasl..._
1lC 40
" ft
.I .
.kInctlon-to-Cese R,JC - 2.6 .C/W
·In .c:c:otdance with JEDEC reg1ltmlon data format

8ftu1sad through 8:z&.mH Inductor: duty hlictor· 60% Fiti- 3· Safe operation with de forward bias.
432 _____________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RF POWER TRANSISTORS
2N5071
24-W(CW), 76-MHz Emitter-Ballasted Overlay Transistor

Features:
Silicon N-P-N Device for 24-Volt Applications in VHF Communications Equipment • for class B or class C amplifiers
• For 24-V FM (30 to 76 MHz) communiCltions
• 24 W output at 76 MHz with 9 dB gain IMin_)
'COLLECTOR-TO-BASE VOLTAGE _,,",.,',.' 65 V • Low thermal resistance
'COLLECTOR-TO-EMITTER VOLTAGE,.,.,.,.,.,.,., .• " 30 V
'EMITTER-TO-BASE VOLTAGE V TERMINAL DESIGNATIONS
'COLLECTOR CURRENT:
Continuous .................. . . . . . . . . . . . . . . . . . . . . ..
Peak ....................... .
Ie 3,3
10
A
A
e~E
~
'CONTINUOUS BASE CURRENT" ,,',',', .. ,' IB A
At case temperatures up to 25°C .................. ,., 70 w
'TEMPERATURE RANGE: •
Storage and operating (junction) ...................... . -65 to 200
*LEAD TEMPERATURE (During soldering); JEDECTO-60
At distances ~ 1/32 in. (0.8 mm) from insulating wafer for
lD 5 max ................................ ,_ ..... . 230
ELECTRICAL CHARACTERISTICS, At Ca.. Tempel'ature ITcl = 250 C

STATIC
TEST CONDITIONS
DC
Collector
Voltage-V
....
DC
Voltage-
DC
Current
mA
LIMITS UNITS
'.
V
Vc• VCE V.E 'E 'C MIN. MAX.
60 -1.5 '0
'CEV
AtT C "5O"C
With base open
'CEO
60
30
". 10
rnA
With emitter open ICBO 60 10 FfEClUENCY (II-MHz

Emitter-Cutoff Current I EaO 10 rnA·
Collector-to-Base Fig_ I - Typical output power as a function
Breakdown Voltage V(BRICBO 200" 65 V of frequency_
Breakdown Voltage: FREQUENCY (11'76 MHz
CASE TEMPERATURE (Tcl-25·C
With base open V(BRICEO 200" 30 V INPUT POWE~ IPIEl-3W
Sustaining Voltage:
With base open VCEOlsusl 200' 30
V
With external base-
to-emittefresistance VCER(susl 200' 40
IR.EI- .11
EmittBf-to-Base
Breakdown Voltage VI-BRIEBO 10 V
DC Forward Current 3 A 10 100
hFE
Transfer Ratio 1A 20
iO
Thermal Resistance 2,. ·e/W
R6JC
(Junction-to-Casel
'Pulsed through e 25-mH inductor: dulV I,clor" 50%; repetition rala ~ 60 Hz_ /O15202530~40
COLLECTOR SUPPLY VOLTAGE IVccl-V
DYNAMIC
TEST CONDITIONS Fig_ 2 - Typical output power as a function
CHARACTERISTIC SYMBOL DC ColleGtor Input Power Frequency LIMITS UNITS of col/ector supply voltage.
Supply IV CCI-V (P1E)-W (f}-MHz MIN_ MAX,
f
Power Output 2' 3 16 2. W I CASE TEMPERATURE (Tel-IOO·C
POE
NOTE:TJS IS OET"EARMINED BY
Power Gain GpE 2. 16 dB • I. USE OF INFRARED
Magnitude of ~ 4:-- Ie MAX

Common-Emitter, V CE=15V
T""OUE
Forward Current IC= 1A
50
ia 2
l. "\,H(OT -SPOT TEMPERATURE
~TJSI'200·C
g~ ,t=t=ttE==i5a-:r-
Transfer Ratio
Available Amplifier Source impedance 16 W
POE = 24 W
Signal Input Power (2g) '" 50
2.
• 1
Collector Efficiency 76 60 % 8 4~--+---~~-1~---1--t-~T,o~~~
Load Mismatch LM 2. 1.2 30 GO/NQGO
liMITED
VSWR" 3:1
Cotlector-to-Base Capacitance Cobo
.. In Iccordince With JEOECregiltmion data
V e• 30 V I •• pF
• 'iO
COLLECTOR-TO-EMITTER VOLTAGE (llCEI-V
Fig. 3 - Safe area for dc operation _
________________________ ~-----------------------------------433
RFPOWERTRANSISTORS ____________________________________________________________________________
2N5090
Features:
High-Power Silicon N-P-N Overlay • Maximum safe-area-of-operation curve
Transistor .1.2 W (min. I output at 400 MHz (7.8 dB gain)

.1.6 W (typ.) output at 175 MHz 112 dB gain)
• Hermetic stud-type package
High-Gain Type for Class A, B, or COperation in VHF/UHF Circuits • All electrodes isolated from stud
MAXIMUM RATINGS, Absolute-MBximum Va/urn:

·COLLECTOR-TO-BASE VOLTAGE .. VeBO 65 V ~ONTINUOUS SASE CURRENT..... IS 0.4 A
COLLECTOR-TO-EMITTER *TRANSISTOR DISSIPATION ...... P-r
VOLTAGE: At case temperatures up to 1 OOOC. • • • • • 4 W
With external bsse-to-emitter
resistance, ABE" 1 on ......... VCER
... With base open .. , ............•. VCEO
55
30
V
V
At case temperatures above 1000C .. Derate linearly at 0.04 wfJc
*TEMPERATURE RANGE:
Storage & Operating (Junction) ........... , -65 to +200 °c
C~E
*EMITTEA·TO-BASE VOLTAGE .... VEBO 3.5 V ·LEAD TEMPERATURE (During soldering):
W•
·CONTINUOUS COLLECTOR At distances~ 1 '16 in. (1.58 mm) from
CURRENT.................... IC 0.4 A insulating INBfer for 10 s max. ............. 230 °c
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel - 250e

STATIC
JEDEC TO-eo
TEST CONDITlqNS
DC DC DC
CHARACTERISTIC SYMBOL ColIlICtor Bose C..rent LIMITS UNITS
Voltage-V Volt...·V mA
1000
,
MAX. ,
·
VeE VB. 'E IB Ie MIN.
With base open ICEO
,. 0.02 • •00
ICMAX.(CONTINUOUS)
~
With base-emitter junction reverse..biased 55 -1.5 0.1 1-" ' :'{"".<~
mA I
With base-emitter junction reverse·biased & ICEV S .~~~

30 -1.5
~ I~ C' ....J<,
·
TC'" 200°C
3.5 0.1 mA , ]" < -
~
Ernitter-Cutoff Current lEBO
Collector-te-Base Breakdown Voltage V{BRICBO 0.1 55 V ,
* Collector-te-Emitter Sustaining Voltage: e VCEOMAX!-
With base..open VCEO(sus) 30 I
V
With external base·to-emitter resistance
'(ABEl'" lon
VCER(S\lS)
55'
1
I , , 1 10 I
3D
, , 1 100
0.1 3.5· V COLLECTOR.TO-EMITTER VOLTAGE (VCEI-V

Emitter-to-Base Breakdown Voltage V(BRIEBO
* Collector-te-Emitter Saturation Voltage Vee(sstl 20 100 I,. V
Fig. I - Safe area for dc ope;ation.
* DC Forward-Current
hF.
360
Transfer Ratio 50 10 200
Thermal Resistance (Junction.to·Casel ReJC 25 °C,W
CASETEJlPERATURE(TC)·2PC
COlLECTOR·To.eM,nER VQL TAGE (VeE) ~ 2& V
.Pulsed through a 25·mH inductor; duty factor = 0.05%.
OYNAMIC 1 I.'
~u
TEST CONDITIONS
m to r-...
~
-
DC Collector Output Input Collec:1of Frequency
r---. ~
! I.,r--
'CHARACTERISTIC SYMBOL Voltage Power (POE) Pow" (PIE) Current (lC) III LIMITS UNITS
V W W mA MH. MIN. MAX.
Power Output (Class C amplifier,
~OE VCC" 28 0.2 400 1.2 w ~ I.. r--- RFIN:::~ lOG ........ t-
unneutralized)
o., ~so",,,~
· . ..
Gain·Bandwidth Product 'T VeE 15 50 500 MHz
Magnitude of Common Emittar,
Ih',1
• ...
Small·Signal,Short-Circuit Forward· VCE = 15 50 2.5 1011
'"
··
, Current Transfer Ratio FREQU!NCY {I)-IN_
Available Amplifier Signalinpot Power Pi 1.2 400 0.2 W
·
1.2 45 Fig. 2 - Typical output power as a function
Collector Efficiency
Collector·to-Base Capacitance
~e
Cobo Vce" 30 - .•.5 "
pF of frequency.
·'n accordance with JEDIlC rlgistrl1l0n data format JS·6 ROF·3. ~(f)-I"'"
CAlI TlftlATURI! (Tel- 2P C
..... CASi!TlftUIIIIIA1UHCt )_U'C

'" •
i "....
1 1
I"
...:.: J
~
I-- i •\
~.~~;;:;;; ~~
I--
~ 'tt,.~r-=: ~ I .~
IIOa
i-
q.J~~ I--
'. r t--.
*.
I·
•• 40 10 00 100
° 10
COLLECTOR-TO-BASE VOLTAGE(YcaJ-Y
ZO
eOLLECTORCUJlRENTIICI-mA
CCJLl.!CTt!lIUI'PLY YOLTAGE (Vcc ....Y "'1. Fig. 5 - Typical variation of cOllector-to-base
Fig. 3 . Typical output power as a function Fig. 4 - Typical gain-bandwidth product as capacitance with collector-to-base
of collector supply voltage. a function of collector current. voltage.
434
2N5102
Features:
Silicon N-P-N Overlay Transistor .15 WCltts Output Min. Cit 136 MHz
• For 2,c.Volt Aircraft CommunlcCltion
High-Power Device lor Class-C, AM Operotion in VHF Circuits • Complete Load Mismatch Protection
• High Voltage Ratings
• Case Connected to Emitter
C~E
VOLTAGE,
'W
With VBE= - 1.5 volts .•.•..••• VCEV 100 V TRANSISTOR DISSIPATION ••••••• P T
With external base-to·emitter At case temperatures up to 2&° C • • • • • • • • •• 70 W
resistance RBE = n .........
5 VeER 50 TEMPERATURE RANGE,
EMITTER-TO-BASE VOLTAGE ••••• VEDO Storage" Operating (Junction) ••••• -65 to 2(0 oc B
LEAD TEMPERATURE (During soldering): 92CS-27481

COLLECTOR CURRENT,
Peak: •••••••••••••••••••••••••• 10 A At distances ~ 1/32 in. from JEDEC T0-60
Continuous ••••••••••••••• Ie 3,3 A insulating wafer for 10 s max ••••••••••• 230 °C
ELECTRICAL CHARACTERISTICS. At ea.. Temperature ITcI- 25'c un/... othfH'wifS rpocified
TEST CONDITIONS
VOLTAGE CURRENT LIMITS

Vd. mAde
VCB VCE VBE IE IB IC MIN. MAX.

· With base·emitter junction
-
·
reverse biased 83 -1.5 20
ICEV mA
'" ...
AtTC"50 C 30 -1.5 10
resistance (RBE) "" 5 n
ICER 50 - 10
· Emitter Cutoff Current lEBO -4 - 10 mA

Fig. / - Typical power output as a function of
frequency.
· Collector-to-Emitter
Sustaining Voltage:
VCEV{SUS) -1.5 600' 100 -
reverse biased
V
With external base·to·emitter
resistance (Ree) '" 5 n
VCER(sus) 200' 50 -
With base open VCEO{sus) 0 200' 35 -
Emitter-to-Base Breakdown
Voltage V(BR)EBO 10 0 4 - V
· DC Forward Current Transfer Ratio hFE

4
4
3A
0.5 A
10
10
-
100
· Magnitude of Common·Emitter,
Small-Signal, Short·Circuit Forward
24 500 1 -
Current Transfer Ratio (hfe{
(f = t50MHz)
OUTPUJ FREQUENCY 1fouTrtttr:
· Output Capacitance If - 1 MHz) Cob 30 0 - 85 pF
· Available Amplifier Signal Input

Power b Pi - 6 W
Fig. 2 - Typical collector efficiency as a
function of output frequency.
(Po = 15 W. ZG = 50 n. f = 136MHz)
· Collector Circuit Efficiency
(PIE = 6W, ZG = 50 n. 10 136MHz) ~C 70 - %
Modulation 24
If = 118 MHz)
M
(VCC)
80 - %
Load Mismatch 24
··
Will not be
LM 1100
(f= t18MHz) (VCC) damaged !
~
Dynamic Input Impedance
(PIE = 6W, f = 150 MHz)
ZIN
24
(VCC)
1.7 + i 2.6
Ityp!
n g
· "cEO
I
Thermal Resistance
(Junction to Case)
-In accordance with JEOEC ratistration data.

ROJC - 2.5 'C/W
·
0.1
.. ..
L_ED
.I . ...
aPulsed through a 9·mH inductor; duty factor = 50'16. aJU.ECTOIt-TO-£IIITTER VOLTAGE tYc£l-V
bUntnodulatld carrier.
Fig. 3 - Safe operation area with dc forward bias.
________________________________________________________________ 435
RFPOWERTRAN~STORS _________________________________________________________________________
2N5109
Features:
Silicon N-P-N Overlay Transistor • High gain.lJondwldth product
• L.,.. dynamic range
High Gain for Line Amplifiers in CATV and MATV Equipment • Low distortion
• Low noise
TERMINAL DESIGNATION
MAXIMUM RATINGS,Absolu...Maximum VaIUfi:

• CQLLECTOR-T().BASE VOLTAGE .••••• VCBO 40 V
COLLECTOA-TO-EMITTER VOLTAGE: • TRANSISTOR DISSIPATION: ...•..... P,
With base open ..••••••••••.•.•••••• VCEO 20 V At call temperature up to 7SoC ...•.... 2.5 W
With external base-to-emltter resistance • TEMPERATURE RANGE:
(RBE) = 10n •••••••••.••••••••.• VeER 40 V S10rqe and operating (Junction) • ',' • • • • . -66 to +200 0c
• EMITTER·TO-aASE VOLTAGE ••.•.••••• V EBO 3 V • LEAD TEMPERATURe (During Soldering): JEDECTO-38
• CONTINUOUS COLLECTOR CURRENT••• Ie 0.4 A At distances> 1'32 in. (0.8 mml from
• CONTINUOUS BASE CURRENT .•••••.• Ie 0.4 A the seating plane for 10 s max .,..... 230 DC
CASE TEIiF£RATURE {TCI • .25-10

COLLECTOR-TO-EMITTER VOLTAGEIVCElal5V
...
•
ELECTRICAL CHARACTERISTICS, Ca.. Tamperatun (TCI • 25"C
CHARACTERISTIC SVr.wOL
DC
TEST CONDITIONS
COLLECTOR" OR BASE
VOLTAGE-V
DC
CURRENT
mA
LIMITS UNITS
,
I
Vca VaE VCE VEB 'E 'a 'C MIN. MAX.
-
!collector- Cutoff Current:
.. ..
ICEO IS 20 ,.A
With base open
With base-emitter Junction reverie-
..
' 100 120 140
ICEV ·1.5 35 COL.L.ECTOR CURRENT (I.e l-mA 9tLS-218IRZ
rnA
Te. 5QOC ·1.5 IS
0.1 mA
Fig. I • Gain·bandwidth product as a
Emitter-Cutoff Current 'EBO
function of collector current.
Collector-ta-Ball Breakdown Voltage
VIBRICBO 0.1 40 V
,- CASE TEMPERATURE (TC)-'OO-C
Sustaining Voltage:
With external base-to-emitter VCER(sus)B 40 V • I
resistance (RBE) - 10 n 1
I
• leI_leoNI""'!""'"!'"
With base ope'h
Emitter-to-Bate Breakdown Voltage
VCEOlsus)
VIBR)EBO 0.1
20 V
V .u
• HOT-SPOT
Saturation Voltage
VCElsat) 10
'" O.S V r'"'00 1"< Tf;~
• CoUector-to-Ba58 capacitance IS I ••
~
Ccb 3.5 pF
It-, MHz)
1;1 • NOTE:
IS 50 40 120 :l '.,. II DETERMINED .V USE OF'
II- DC Forward-Current Transfer Ratio hFE S 350 II INFRARED SCANNINI 1'ECHNIQI,ES
I
. • • I ... . . •
Small-5ignal Common-Emitter I. 2S 4.8
Forward Current Transfer Ratio hf. IS 50 6
If· 200 MHz)
" Magnitude of Common-Emitter
IS' I .. 4.8
• 'A 100
Small-5ignal Forward
If" 200MHzl
I I
h•• I. 50
COLLECTOR-TO-EMITTER VOLTAGE ('U,l-V
Fig. 2 . Maximum operating area.

.ZCS-ZZ8113
• A.vailable Amplifier Signal

Input Power IS
P; 50 0.1 mW
IP out - 1.26 mW, Source IVCCI
Impedance· 50 n, f = 200MHz)
" Voltaglt Gain. Wideb&nd. 50 to 216
GVE IS 50 11 d8
MH,
Cross Modulation" 54 dBmvb
CM I. 50 -57 (typ.) dB
Output
Power Gain. Narrowband
If II 200 MHz, GpE I. 10 11 dB
PIN "',",OdBm)
Noise Figure If = 200 MHz)
NF IS 10 31~p.1 dB
apulsed through a 25 mH inductor; duty factor - 50% b 0 dBmV .. 1 mllli\lOlt

• In accordance with JEOEC registration data
100
COL.L.ECTOR eURII:ENT-mA
ttLI-IUIII'
Fig. 3· Power gain and noise figure as
a function of collector current.
436
2N5179
Features:
SIUCON N-P-N EPITAXIAL PLANAR TRANSISTOR • high gain-bandwidth product _ 1000MHz min.
• hermetically sealed TO .. 72 four-lead metal package
For UHF Applications In Mllnary, communications, and Industrial Equipment • low leakage current
high power gain as neutralized amplifier-
Gpe = 15dB min. at 200MHz
• high power output as UHF oscillator_
20mW typ. at 500MHz
Maximum Ratjngs, Absolute-Maximum Value.:
low noise figure-
COLLECTOR-TO-BASE NF = 4.5dB max. at 200MHz
VOLTAGE, VeBo 20 V
• low collector-to-base time constant-
COLLECTOR-TO-EMITTER For operation at ambient rb'Ce = 14ps max.
VOLTAGE, VCEO 12 V temperatures:
high r.llabllity-
At ambient {u~ to 26·C 200 mW
EMITTER-TO-BASE temperatures a ve 25°C Derate at 1.14mWjOC production lots of RCA-2N5179 are subjected to and
VOLTAGE, VEDa 2.6 V meet the minimum mechanical, environmental, and
TEMPERATURE RANGE: life..test requirements of the basic MILITARY specl-
COLLECTOR CURRENT, Ie 60 rnA Storage and 'Operating (Junction) --;;6 to +200 ·C flcaHon MIL-S-19500. 5•• Fig.2 for a d.scrlp-
tlon of the Group A and Group B Tests.
TRANSISTOR DISSIPATION, Pr, LEAD TEMPERATURE
For operation with heat sink: (During Soldering):
~:n=tures .. {:I:o: ~g:g 800 mW

Derate at l.71mW/oC
At distances ;;:: 1/32" from seating
surface for 10 seconds max. . 266 ·C TERMINAL DESIGNATIONS
•• Measured at center of seating surface.

B~C
E~
CASE
JEDEC TO-72
TEST CONDITIOJtS LIMITS
Chlr,can.tlts Srmbols
Ambient
Temp. Frequency
DC
to-Blse
VOlta,.
DC
to-Emltter
Volta"
""
CDllector- Collel:tar· Emitter·
to-hse
Volta,.
DC
Emitter
Clrrtnt
DC
Collmar
Current
....
DC
current 2~~ Uftlls
T. f Vca Ve. V. . I, Ie I.
·e M., V V V mA rnA mA Min. Ty,. Mil,
25 15 0 0.02
Coliector..cutoffCurrent
Collector-to-Base
leBO 150 15 0 1 pA
""
Breakdown Voltage V(BR)CBO 25 0 0.001 20 V
Collector-ta-Emitter 25 3 0 12 V
Sustaining Voltage V1CEO!susJ
Emitter-to-Basa Y(BR)EBO 25 -0.01 0 2.5 V COMMON-EMITTER CIRCUIT. eASE INPUT;
Breakdown Voltage OUTPUT SMORT 'CIRCUITED
FREQl£NCY In -IOOMHz
AMBIENT TEflFERATUR£ ITAI-25 DC
Coliector·la·Emitter YCE(sat) 25 10 I 0.4 V
COLLECTOR-TO-EMITTER VOLTS 1"cf1-6
Saturation Valtage
Base-to-Emitter V..IsaU 25 10 I 1 V
saturation Voltage
Static Forward Current· hr. 25 I 3 25 70 250
TraflsferRatio
Ma'on~~~ ~~:~~~gn'!~~, Ihr. 1

25 100
I kHz
6
6
5
2
9 14 20
25 90 300
Ratioa
Collector·tQ.Base 25 0.1 to 1 10 0 0.7 t pF
Feedback Capacitanceb Cob
,+++
10 20 25 30 35
Common-Base Input
Capacitancec Cjb 25 0.1 to I 0.5 0 2 pF COLLECTOR MILLIAMPERES IIcl
Collector·to-Base Fig. I-Small-signal beta characteristics for

Time Constanta 'b'Cc 25 31.9 6 2 3 7 14 p.
type 2N5179.
Small-5ignal POWlr Gain
in Neutralized Common· Gpo 25 200 12 5 15 21 dB
Emitter Amplifier Circuit-
Power Output in Common-

Emitter 9scilator Cir· p. 25 >500 10 -12 20 • mW
cuitc
NoiseFI~rea- NF 25 200 6 1.5 3 4.5 dB
• Lead No.4(C818) pounded; Rg =1250 c Lead No. 4 (case) floating.

bThree·terminal measurement of the collector·to-base capacitance
wlttl the case and emitter leads connected to the guard terminal.
________________________________________________________________ 437
2N5179
100%
FACTORY CUSTOMER
I'I$TS
TEST DESCRIPTION
GROUP A TESTS
Subgroup 1. Visual and Mechanical Examination ....................... " ........ ,.. S%
Subgroup 2. Electrical 10%
GROUP B TESTS
Subgroup I. Physicol Dimensions ........................................................... . 20%
Subgroup 2. Solderability, Temperoture Cycling,
Thermol Shock, Moisture Resistance ................................. ,. ... 20 "I.
Subgroup 3. Shock, Vibration Fatigue, Vibration
Variable Frequency, Constant Acceleration ......................... . 20%
Subgroup 4. Terminal Strength .. 20"1.
Subgroup 5. Salt Atmosphere ....... , ... ,... " .............................................. . 20%
Subgroup 6. High-Temperature life, Non-Operating
(r. = 200 0 CI ....... ,",""',",."',.,"".,',.,"',.,',.,',, .. ,'"." .... " .. , 10%
Subgroup 7. $teady-Stote-Opera.ion life
(PI> = 300mW, T. = 2soq ,.'."""",."",." .."".", ...." .. ,,, .. ,
Fig. 2 - Group A and Group 8 Quality Sampling Tests.
~8 ___________________________________________________________
2N5180
Silicon N-P-N Epitaxial Planar Transistor

For VHF Applications in Industrial and Commercial Equipment Features:
• High gain-bandwidth product
• Low noise figure
• High unneutralized power gain
• Hermetically sealed four-lead metal package
• All active elements insulated from case
*COLLECTOR·TO·BASE VOLTAGE . . VCBO 30 V • Low collector·to-base feedback
*COLLECTOR·TO·EMITTER VOLTAGE. VCEO 15 V
·EMITTER·TO·BASE VOLTAGE . . • VEBO 2 V
'CONTINUOUS COLLECTOR CURRENT IC limited by dissipation TERMINAL DESIGNATIONS
At ambient temperatures up to 25°C 180 mW
At ambient temperatures above 25°C See Fig.2
*TEMPERATURE RANGE:
Storage & Operating (Junction). . -65 to 175 °C
B(&-C
'LEA;) TEMPERATURE (During Soldering): E~
At distances ~ 1/32 in. (0:8 mm) from seating plane for 105 max. 265 °C
CASE
• Measured at center of seating surface. 92C5-27513
JEDEC TO-72
ELECTRICAL CHARACTERISTICS,.t TA = 25°C

DC DC
Collector Collecw· DC DC
Characteristics Symbols Frequency to-Base to-Emitter Emitter Collector Type Units
1 Vollage Voltage Current Current 2N5180
VCR VeE If: Ie
MHz V V mA mA Min. Typ. ~ax.
* Coliector·Cutoff Current leBO . 8 0 0.5 .A
• Collector-ta-Base
Breakdown Voltage BVCBO 0 0.001 30 V
Breakdown Voltage BVCf-:o 0.001 15 V
Emitter-ta-Base
Breakdown Voltage BVt:no ·0.001 0 2 V
COLLECTOR MILLIAMPERES IIcl
Static Forward-Current
Transfer Ratio hn: 8 2 20 200
Fig. 1 . Typical smal/'signal beta
* Magnitude of Small·Signal characteristics for 2N5180.
Forward-Current Ih,.I' 100 8 2 6.5 9 17
Transfer Ratio
Collector-te-Base pF
Feedback Capacitance Cct:- b 0.1 to 1 8 0 1
Small-Signal. Common-
Emitter Power Gain in
Unneutralized Amplifier GpE a 200 10 2 12 19 dB .
Circuit
VHF Noise Figure NF' 200 8 2 4.5 dB

NFa,c 60 8 1 2.5 dB
Collector· Base
Time Constant rb'C c 31.9 8 ·2 2 - 16 ps
Real Part 01 Common·

Emit10r Small·Signal 200 10 2 60 - !l
Short·Circuitlnput
Ra(hie) 240
Impedance
Bandwidth BW 200 10 2 650 - 1700 MHz
'Follrthleadlcaselgrollnded. eSolirce Resistance, R,=400 ohms.

bC cb is a three terminal measurement of the collector·to·base capacit ance
with the emitter and case connected to the gllard terminal. Fig. 2 . Rating chart for 2N5180.
'" In accordance with JEDEC regidration data format JS-9 RDF·t.
_____________________________________________________________ 439
RFPOWERTRANSISTORS __________________________________________________________ ~ ________________
2N5913
Features:
Silicon N-P-N Overlay Transistor • High Powe, Gain, High Power Output •..
At 12.5 V.:
12.5·Volt, High·Gain Type for Class-C Amplifiers in VHF/UHF Communications Equipment 2·W (typ.) output at 470 MHz (7-dB gain)
2·W (typ.) output at 250 MHz (9·dB gain)
2·W (typ.) output at 175 MHz (J3·dB gain)
AtS V:
1.5·W (typ.) output at 470 MHz (4.S·dB gain)
MAXIMUM RATINGS, Ahso/ute·Maximum Value.: 1.5·W (typ.) output at 250 MHz (7.0.dB gain)
* COLLECTOR-TO-BASE VOLTAOE. Vceo 3. V .TRANSISTOR DISSIPATION: . . . . . P T 1.5·W (typ.) output at 175 MHz (10..18 gain)
COLLECTOR-TO-EMITTER At case temperatures up to 75°C .. 3.5 W
BREAKDOWN VOLTAGE: At case temperatures above 75°C. Derate at 0.0028 W/OC TERMINAL DESIGNATIONS
* TEMPERATURE RANGE:
,fj,,-
With base shorted to emitter . . . . V(BR)CES 3. V
• With base open . . . . . . . . . . . . . V(BR)CEO I. V Storage & Operating (Junction) .. -65 to -+200 'c
_EMITTER-TO-BASE VOLTAGE •.. V EBO 3.5 V *LEAD TEMPERATURE:
.. CONTINUOUS COLLECTOR At distances ~ 1/32 in. lO.S mm)
CURRENT • . . . . . . . • . . . . . . . Ie 0.33 A from seating plane for 10 s max. 230 'c
92C5-27512
JEDEC TO·39
COLLECTOft-SUPf'LY VOLTS (Yecl.ll.,

CAS[ TE"PERAT~E ITt "25-C
ELECTRICAL CHARACTERISTICS Case T"",,....ru,. ITCJ - 25 0 C IInIe# Othorwlre Spec/f1od
STATIC
TEST CONO ITiONS ,. 2.' OF,
DC DC I 2
CHARACTERISTIC SYMBOL Voltage Current

LIMITS
UNITS ~
(V) (mA) ; 1.5
;:
VCE VEB Min. Max. 2 ,
'E 'B 'C
..,
Colleclor-Culoff Currenl
0 LOb
~
00.5
Base Connectetl to Emitter 'CES 11.5 rnA
Base Open 10 0.3 rnA o
0 tOO 200 :sao 400 eoo
' CEO FREQUENCY Ifl-MHr ,ZCS-lse4,1iI1
* ColiecloHo·Base
Breakdown Voltage V(BR)CBO 0 0.5 36 - V Fig. I - Typical power output as a function of
Co lIeclor-lo- Emiller frequency.
*
Breakdown Voltage:
With base open V(BR)CEO 0 15" 14 - V
With base connected
to emitter V(BR)CES 0 25" 36 -
* Emitter-to-Base Breakdown
Vollage V(BR)EBO 0.5 0 3.5 - V
Thermal Resistance:
(Junction-to-Case) 8J·c - 35.7 °C/W
a Pulsed through a 2S-mH indu::tor; duty factor :- 50%.
DYNAMIC
FREQUENCY -LIMITS
TEST & CONOITIONS SYMBOL UNITS
MHz MINIMUM TYPICAL RF INPUT WATTS IPI£I
,2CS-I,.URI
Power Oulpul (Vee ~ 12.5 V): Fig. 2 - Typical power output as a function of
POE 175 1.75 W power input at 250 MHz.
P,E - 0.1 W
Large-Signal Common·Emiller Power

Gain (V CC ·12.S VI: GpE 175 12.4 dB
P,E = 0.1 W
Colleclor Efficiency (VCC ~ 12.5 V): 'h

'lC 175 50
P,E' 0.1 W
. Common·B.se Oulpul Capicalance

VCB <12V
Cobo 1 15 (max.) pF
'" In accordance with jEDEC registration data format jS-6 RDF-3/JS-9 RDF-7.
'ZCS-I!lUSfll
Fig. 3· Typical power output as a function of

power input at 470 MHz.
440
POWER TRANSISTORS
2N6670
Silicon N-P-N Epitaxial Planar Transistor Features:
- Designed for vhf "CS" transmitters
Output Device for Class C AM Operation in 27 MHz "CB" and VHF - 4-W output 8t 27 MHz (12.5 Vee)
Communications Equipments -Infinite vswr capability (12.5 VCC' 27 MHz)
- Can retrofit T0-220 sockets
The RCA-2N6670· is a silicon n-p-n epitaxial or predriver stages in FM and CW service up
planar transistor intended for use in mobile to 80 MHz. This type is supplied in the
citizen-band {CBI transmitters operating from JEDEC TO-202AB molded-plastic (VERSA- TERMINAL DESIGNATIONS
a 12.5 V supply as a class C AM rf output de- TABI package.
C
vice. It is useful for class C output, driver, • Formerly RCA Deo. NQ. TA9124. (FLANGE)
•
•
*
•
V CES '
VCBO '
VCEolsus)
V EBO '
.
.
.
.
.
.
•
.
.
100
80
50
3
V
V
V
V
"ElF [Y'~
TOP VIEW C B E
• IC IContinuous) . 1.5 A 92C5·27528
• PT JEDEC TO-202AB
TC';;;250C . 10 W
TC>25°C . Derate linearly 0.08 wtc
• T J , TstQ . . . . . . • • . . . • • • -66 to 150 °c
• T L DUring soldering IAt distance ;;;'1/8 in. 13.17 mm)
from molded plastic package measured either along
terminals or mounting flange for 105 max.). . • 230 ·C
• In accordance with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7
ELECTRICAL CHARACTERISTICS. At c.. Temperature (TCI- 25"c

STATIC
TEST CONDITIONS
DC DC
CHARACTERISTIC SYMBOL Collector Current
LIMITS UNITS
VoItlige-V mA
Vea VCE IC MIN. MAX.
• AtTC= 1OO·C ICES 60 - 10
IJA
With base open ICED 30 - 10 CASE TEMPERATURE (TC) --c
'2CS-30488
With emitter open ICBO 15 - 10·
Fig. t - Derating curVB.
• Collector-to-Base
Breakdown Voltage V(BRICBO 0.5 80 - V
Breakdown Voltage:
With base shorted V(BRICES 50 100 - V
BreakdoWn Voltage:
WithRBE=10n V{BR)CER 0.1 90 - V
Sustaining Voltage:
With base open VCEO{susl 2OQ8 50 - V
• Emitter-ta-Base
Sreakdown Voltage
IE = 1 mA V(SR)ESO 0 3 - V . RF 'NP" POWER (I -w ,2CI-504Ia
• DC Forward Current Fig. 2 - Tvpical output power 11$ a function

of input power at 27 MHz.
Transfer Ratio hFE 2 400 30 -
Thermal Resistance
(Junction-to-Case) R9JC - 12_5 ·CIW
2".
• Pull8d; pula duration" 300 pl. duty factor"
----_____________________________________________________________ 441
POWER TRANSISTORS
2N6670
I CASE nMP.RATUR. 'Tcl' ••..,
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tci =2SoC (cant'd)
I YiiLfAii.·fi '~i;:o'v··"
DYNAMIC· ••
TEST CONDITIONS ~
CHARACTERISTIC SYMBOL DC Collector InputPowlt' Frequency .LlMITS UNITS ~.
Supply CPIEI-W Cfl·MHz MIN. MAX.
CVCCI- V
I~
Power Output POE 12.5 0.4 27 4b - W
• Power Gain GpE 12.5 0.4 27 10 - dB
• Collector Efficiency '1C 12.5 0.4 27 86C - FREQUENCY (f) - MHz ~CS.304"
Moduletion Index m 25 o.41mod.I 27 a&d 86 (typ.) " Fig. 3,.. Typical rf output pOWfir a. a function of
frequency at Vee - 12.5 V.
Load Mismateh 00: 1 VSWR 25 1.ad.. 27 1 - cycle
• Collector4o-8lse
Capacitance Cobo VCB'" 12.5VI - 1 - 50 pF
• In _ _ _ with JEDEC f'IIIttrItIon elide. outputpoMl' IIdJUIted for IIWxlmum 11111 limit
II Circuit In F!t•• tullld , . optimum AM perforllWnao. C4 W clln'1.).
II flulllclinput: 1 kHI...,. _ . IO%lIuty cycl..
• CIreuIt In I'Jt.I tUIIId,. optimum AM partor_,
.....k IIMIope poMI' (FEP).
TYPICAL APPLICATION INFORMATION

DC Collector Input Output CollectOr . I~
APPLICATION Supply Voltage Poww IPIEt-w Po_1POEI-W EfflcllIICY
eVcct-v e'lCI-"
27·MHz CB
DriverlAmplifier 12.5 0.04 4
4O-MHz Class C
Amplifier 12.5 0.5 5 70
FREQUENCY {f)-MHz 92C8-304"
IC·a.SA 12.5 1 7· - Fig. 4 - Typical rf output power a. a function of

frequency at Vee = 28 V.
200 CASE TEMPEMTURE (Te ,. 2~·C

COLLECTOR-TO-EMITTER VOLTAGE (Vcr)-I•• , v
%
a
~ 150
I""--
,
~
i!
f 100
y'"
~
.0
/
~
0
10
4
•• 100
COLLECTOR CURRENT I Ie) - .... A
4
• "000
9I:CI-1048"
Fig. 5 - Typical gain-bsndwldth product B' B Fig. 6 - Typical collector·ta-ba.e capacitance a. a
function of collector current. function of col/ector-to-bs.e IIO/rage.
442
40280
1W, 175-MHz Overlay Transistor Features:
• Suitable for low-voltage supplies (13_5 V)
Silicon N-P-N Devices for High-Power VHF Amplifier Service
• High output power at 175 MHz.
unneutralizec! class C amplifier
• High efficiency at 175 MHz
• Low input impedance

40280
COLLECTOR-TO-BASE VOLTAGE _ _ V CBO 36 V
With base open . V CEO 18 V
With V BE = -1.5V. • • V CEV 36 V TERMINAL DESIGNATIONS
EMITTER-TO-BASE VOLTAGE V EBO 4 V
COLLECTOR CURRENT . 'C 0.5 A
TRANSISTOR OISSIPATION PT.
At case temperatures up to 25 0C . 7.0 W
At case temperatures above 25 C . Derate linearly to 0 watts at 200°C
TEMPERATURE RANGE:
92CS-27!5I2
Storage & Operating (Junction) -65 to 200 DC
LEAD TEMPERATURE (During soldering): 40280
JEDEC TO-39
At distances;;;' 1132 in. (0.8 mm) from seating p'ane for 10 s max.
ELECTRICAL CHARACTERISTICS At Ca•• T••peratura (TeJ =25 ae

DC DC DC Typ.
Charact.rl.tlc. Symbol Bo ••
Collector Curr.nt Un",
,(0280
Vol•• Vol •• (M,IIlompe,•• )
Vca VCE VaE 'E la 'C Min. Max.
Colleclo< Cutoff Current IcEO 15 0 - 100 lolA
Collee_Baae BreakdOWD. Volla/le BVCBO 0 0.25 36 - V
Emittel"lo-Beae Breakdown Volta,s BVEBO 0.10 0 4 - V

RF POWER INPUT (PIN) - w
Colle_Emillar Breakdown
Volt.,e
BVCEV -1.5 200" 36 - V 92L.S-1528R2
Fig_ 1 - Typical RF power output vs. RF

Collec_Emitter Suatainin,
Voltace
VCEo'sua) 0 200a 18 - V power input at 175-MHz.
Real Part of Common-Emitter

Hi/lh Frequency hie (real) 13_5 100 10(~.) Q
Input Impedance (At f = 175 MIlz)
RJi' Power Output:
Aa Clasa-<: Amplifier. Unneutralized
(At f = 175 MHz)
POUT 13_5 Ib - W
Gal....Bandwidth Product fT , 13_5 100 650 (typ.)i MHz
CollectoMo-Baee Capacitance
(Atf= 1 MHz) Cob 13.5 0 - Ilil pF
CollectoMo-Ca.e CapaCitance C. - - pF
Thermal Reaiatance J1Dlction-to-Caae 9J-c - 25 I"cIW
·Pulsed throuch an inductor (25 mHl; duty factor = 5OlI.. bFor PIN = 0.125 w; minimum efficiency = 6'"'.
________________________________________________ ~ ____________ 443

RFPOWERTRANSISTORS __________________________________________________________________________---
40290-40292
Features:
SIUCON N·P·N "ove~af TRANSISTORS • High carrier output power as 136 MHz Crass.c am-
pHfier with 12.5 yolt collecto. supply yoltage
For Low Supply Voltage, High Power Output, Amplitude Modulated, 40290 - 2 walls (min.) at PIN = 0.5 wall
40291 - 2 walls (min.) at PIN =0.5 wall
VHF Class-C Amplifier Service in Aircraft, Military, and Industrial 40292 - 6 walls (min.) at PIN = 2.0 walls
Communications Equipment • 100% testing of all transistors perfotmed to assure
excellent upward modulation characteristics
• High collector efficiency at 136 MHz
• All electrodes isolated ftomcase (40291 and 40292)
ij0290 ij0291 ij0292 ij0290 ij0291 ij0292 TERMINAL DESIGNATIONS
COLLECTOR-TO- EMITTER
VOLTAGE: 11lMPERAnJRE RANGE,
,fj".",
With VpE "" -1. 5 volts, Storage. -65 to 200°C
VCEX \- . . . . . . . 50 50 50 volts Operating (Junction) -65 to 200°C
At f= 100 Me, PIN OR LEAD TEMPERAnJRE
VCF.V(RF). • .• 90 90 90 volts (During soldering):
EMITIER-TO-BASE At distances ~ 1/32
VOLTAGE. VEOO' 4 4 4 volts from insulatingwaler
alLLECTOR OJRRENT, IC' 0.5 0.5 1. 25 amperes (TO-60 package) or 92CS-27512
TRANSISTOR fron seating plane 40290
DISSIPATION, PT' (TO-39 package) for
10 seconds maximum. 230 °c JEDEC TD-39
up to 25° C. 7.0 11 .. 6 23.2
above 25° C. Derate Ii'nearly to 0 watts
at 2pOo C
C~E
'W 8
40291.40292
ELE"CTRICAL CHARACTERISTICS. At c... Temp."'UTe lTd - 2ff'c JEDEC TO-60
-
TEST CONDInONS LIMITS
DC DC DC Type Type Type
CHARACTERISTIC SYIoWOL Collector Cu..... 40290 40291 40292 UNITS
Val.. Vol. (Milliampemt
VCB V CE VBE IE IB lC Min. Max. Min. Ma.. Min. MIlK.
Collector Cutoff Current ICED 15 0 100 - 100 250 ,..
0.1 4.0 4.0 - Volts

Emitter-ta-Base Breakdown Voltage BV EBD
0.25 o 4.0 - Volts
Collector-ta-Emitter BV CEX -1.5 200" 50 50 50 - Volts

Breakdown Voltage
Real Part of Common-Emitter 12.5 100 12(Tvp.l 12(TVp.1 - ohms

Input Impedance (At f =135 MH.,) hie(real)
12.5 400 6.5(TVp.1 ohms
RF Carrier Power Output:

As Clas~C Amplifier, POUT 12.5 2.0e - 2.rf- 6.0" - watts
(At f = 136 MH:d
"Gain-Bandwidth Product IT
12.5 100 500(TVp.1 5OO(Typ.1 - MHz
12.5 400 300(TVp.) MHz
Collector-ta-Base Capacitance
(Atf: 1 MHz)
Cob 12.5 17 - 17 30 pF
Collector-to-Case Capacitance c, - 6.0 6.0 pF
Thermal Resistance
(Junction-ta-Casel
25 - 15 7.5 °CIW
aPulsed through an inductor (25 mhl; RBE = 39 ohms; duty factor '" 50%. cFor PIN = O.5w; minimum efficiency =10%,
bAt frequencies of 100 Meor higher. d For PIN" 2.0 w; minimum efficiency =70%.
~4 _____________________________________________________________
__________________------_________________________________________________ RFPOWERTRANSISTORS
40340, 40341
High-Power 50-MHz Emitter-Ballasted Features:
• Emitter ballasting rasiston
• 13.5 V-25 W min. power output. 7 dB min. gain (40340)
Silicon N-P-N Overlay Transistors • 24 V-30 W min. power output. 10 dB min. gain (403411
• Emitter connected to case
• Infinite load mismatch tested at 50 MHz
For 13.5-V and 24-V Applications in Mobile Communications Equipment
C~E
'W
MAXIMUM RATINGS, Absolute·Maximum Values: 40340 40341
With base open ............................................. VCEO 25 35 V
With base-emitter junction reverse-biased (VSE) ::: -1.5 volts ........... VCEV 60 70 V B
COLLECTOR·TO·BASE VOLTAGE .••.............•.•............• VCBO 60 70 V 92CS-27481
EMITTER·TO·BASE VOLTAGE ................................... VEBO 4.0 4.0 V
JEDECT()..6(J
PEAK COLLECTOR CURRENT .................................. 10 10 A
CONTINUOUS COLLECTOR CURRENT ........................... IC 3.3 3.3 A
TRANSISTOR OISSIPATION .................................... PT -00 ••,
At case temperatures up to 250 C ............................... , 70 70 W I c••• TEM ••••lU•• ITC I- ,.• .,.
TEMPERATURE (Operating junction) ............................. TJ 200 200 °C
ELECTRICAL CHARACTERISTICS. At Case Temperature (T cI =25°C

STATIC
DC DC
Collector Ba.. DC
Z 3 4 5 6
CHARACTERISTIC SYMBOL Vol_ Vol_ Current 40340 40341 UNITS ... POWER INPUT IPIN I-w
(VI (VI (mAl UL.S-'''.'''I
V CB V CE V BE IE IC Min. Max. Min. Max. Fig. I - Typical performance of type 40340 in a
Collector-Cutoff Current: I CEO 30 - - - 1.0 common-emitter amplifier.
With base open 15 - 1.0 - - mA
With emitter open I CBO 50 - - - 10
40 - 10 - -
IS
Breakdown Voltage: •
1 40
200" 25 - -
~
With base open V(BRICEO 35
V
With b'!lse-emitter junction
reverse biased. and external ~ ..
base-to-emitter resistance iI 30
(RBEI = 20n V(BRICEV -1.5 200" 60 - 70 - i
~ .S
Emitter·ta-Base Breakdown
Voltage V(BRIEBO 10 4 - 4 - V
20
Thermal Resistance:
II
(Junction-to'Case) R8JC 2.5 2.5 °C/W o 3 4 5 • 7 8
flF POWER INPUT "'IN 1 - .
aP1Jlsed through a 25'mH Inductor; duty factor" 50%. nLS-'4"'"
Fig. 2 - Typical performance of type 40341 in a
DYNAMIC common-emitter amplifier.
· I I
• CASE: TEMPERATURE (TC)-IOO-C
DC Collector Input 40341
CHARACTERISTIC SYMBOL Frequency 40340 UNITS
Supply Power
(II-MHz Min. Max. Min. Max.
:rc- NOTE:T.JS IS DETERMINED BY
INFRARED SCANMN8 TECHtIQI.E
· I 11'1'
(VCCI- V (PIEI-W
1
U
- -
-
'\
13.5 5 50 25 HOT-SPOT TEMPERATURE"
Power Output POE W tl TJS-200ec
24 3 50 - - 30 - ~
I ·
I
13.5 5 50 7 - - -
··
Power Gain GpE dB
24 3 50 - - 10 - '\.
Collector Efficiency
Load Mismatch
~C
LM
13.5
24
13.5
5
3
5
50
50
50
60
-
-
-
GO/NOGO
60
- -
-
%
!·
. . .. ··r. . . .
24 3 50
Coliector-to·Base
Cabo
VCB =30 1 - - - 85
pF 0.1
VC. . . .
Capacitance VCB = 15 1 - 120 - - 10 100

COLLECTOR-TO-BAIE VOI.TAGE Ivcel-V
Fig. 3 - Safe area for dc operation•.
______________________________________________________________ ~5
RF POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _......_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
40608
Silicon N-P-N Overlay Transistor Features:
• High Gain.Bandwidth Product
• Low Cross-Modulation
For Class A Wide-Band CATV and MATV Applications

TRANSISTOR DISSIPATION ..•.... PT
COLLECTOR-TO-BASE VOLTAGE .• VCBO 40 V
At case temperatures up to 25°C ...... 3.5 W
COLLECTOR-TO-EMITTER At case temperatures above 25°C ...... See Fig. 1.
VOLTAGE:
TEMPERATURE RANGE:
Storage & Operating (Junction) ..... -65 to + 200 °C
resistance, (RBE) = lOOn ...•.. VCER 40 V JEDEC TO-39
LEAD TEMPERATORE (During soldering):
EMITTER-TO-BASE VOLTAGE ••..• VEBO V At distances ~ 1/32 in. <0,79 mm) from
COLLECTOR CURRENT •.•..•... IC 0.4 A seating plane for" 10 s max ...•••...• 230 °C
ELECTRICAL CHARACTERISTICS, Ca.e Temperatur. = 25·C

Tesl Conditions
DC DC
Characteristic Symbol Collector Current Limits Units
Volts (mA)
VCB VCE IE IB IC Min. Max.
Colleclor·Culoff Currenl ICEO 20 0 100 "A
Colleclor-Io-Base 0 0.1 40 V
Breakdown Voltage V(BR)CBO CASE TEMPERATURE(TC1--c 92LS-1224Al
Colleclor-to-Emiller Fig. I - Dissipation derating curve.

VCER(sus) 50· 40 V
Vollage(Suslaining)
1000 CASE TEMPERATURE (T C) -100 .c
Emitter-ta-Base 0.1 0 2 V
Breakdown Voltage V(BR)EBO
~ Ic MAX.
Collector-to-Emiller
Saturation Voltage
VCE(sat) 10 50 1.0 V
~
~ L:srT-SPOT TEMPERATURE
Collector-ta-Base Capacitance ~ t 1"5)-2OO-C
Cob 30 0 3.0 pF
(Measured al I MHz)
u at-
!iIOO "==+=~=+=:j:::~="l===!=i=:R
Gain-Bandwidth product IT 15 50 700 MHz ~ I~NmOToTE~,L---J-~~-r----r---i--+-i~
L&I 4 TJS IS DETERMINEO BY
DC Forward·Current
Transfer Ratio hFE 15 50 35 120 U~ USE OF INFRARED
SCANNING TECHNIQUES
Voltage Gain VG 15 50 11 dB
10 J-10 6 "100
Cross Modulation CM 15 50 -57 (Typ.) dB COL.L.ECTOR-TO-EMITTER VOLTAGE (VCEI-V
@46dBmV
a Pulsed through an inductor (20 mH); duty factor :3 50%; RBE .. 100 O. Fig. 2 - Safe area for dc operation.
446 __________________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ RF POWER TRANSISTORS
40894-40897
High-Frequency Silicon N-P-N Transistors
For TV-Tuner, FM and AM/FM "Front-End", and I F Amplifier, Oscillator, Features:
• High goln-bandwidth produell:
and Converter Service fT • 1200 MHz typ_ for tuner typal
• 800 MHz typ_ for If-ompllfler type,
• Vary low coillcto....to-ba~ ....dback capacitance:
Cob • 0_7 pF typ_ for 40894, 40896
• Low noise figure:
3 dB typ_ at 200 MHz for rf amplifier type
MAXIMUM RATINGS,AbIolut..Maximum V.I"",: • High power gain 81 neutralized amplifier:
GpE • 15 dB mln_ at 200 MHz (408941
COLLECTOR-TO-EMITTER VOLTAGE _________ - _- - _. VCEO 12 V
High pow.. output II uhf oscillator:
COLLECTOR-TO-BASE VOLTAGE _., __ ." " . _.. - .. _' _... _.. - VCBO 20 V
POE • 20 mW typo at 500 MHz (408981
EMITTER-TO-BASE VOLTAGE. _. _.. , _' __ . _. _. - - _. -"" . -' -- VEBO 2.5 V
• Low nol•• figure:
CONTINUOUS COLLECTOR CURRENT _... _.... _. _... _.... _- . IC 50 rnA NF - 4_5 dB m1X_ at 200 MHz (409941
TRANSISTOR DISSIPATION . _... _. ___ . _- _- _. - - . - - ... " ... - . PT • Low coIlector~to-base time constant:
With heat sink. at case temperatures up to 25°C ............... . 300 mW
'b'Cc • 14 ps max.
With heat sink, at case temperatures above 25°C ............... . Derate linearly 1.71 mWtC
At ambient temperatures up to 25C1C ..............•.... , ... . 200 rnW
Derate linearly 1.14 mWrC TERMINAL DESIGNATIONS
At ambient temperatures above 25°C ....................... .
TEMPERATURE RANGE:
Storage & Operating (Junction) ........................... . -65 to +200 'c B~C
CASE TEMPERATURE (Dwing_erlngl:
At ",stances;;;;' 1132 in. (0.8 mm) from seating
surface for 10 seconds mp. . .......................... . 265 ·C E~
CASE
9ZCS-27!513
JEDECTO·72
ELECTRICAL CHARACTERISTICS at Ambient Temperature ITAI = 25'C unles. otherwi'e .pecifled

DC COLLECTOR OR
FREQUENCY OCCURRENT TYPE 40894 TYPE «1195 TYPE 4(1196 TYPE 40897
CHARACTERISTICS SYMBOLS EMITTER VOLTAGE UNITS
MH. rnA RF AMPLIFIER MIXER OSCILLATOR IF AMPLIFIER
V
VeB VeE VEe 'E Ie 'B Min. Typ. Max. Min. Typ. Max. Min. Typ. Male. Min. Typ. Max.
Colklctor·Cutoff
Current
,. 0.02 0.02 0.02 0.02
leBO "A
TA .. 1SOoC 1.
Collector·to·a... VtBRICBO 0.001 20 20 20 20 V

Breakdown Voltage
Collector-la-Emitter VCEO{susl I. V
SusUining Voltage " " "
Emitter·to·S- V(BRIEBO 0.01 2 .• 2.' 2.' 2.' V
BrHkdown Voltage
Coliector·to·Emi1t8l' Vce(satl 10 0.' 0.' 0.4 0.4 V

Slturation Voltage
Base·to·Emitter VeEls..t) 10 V
Saturation Voltage
Static Forward Current· hFE .0 eo 2.0 .., 70 250 27 50 250 70 120 250
Tr'MferRatio
M-anitude of Common·
Emitter, Small·SigNiI
Shorl·Clrcuit, For· Ihfe I
100
1 kHz
9
2. "
90
20
300
9
25 "
90
20
300
9
2. "
eo
20
300
9
2.
,.
90
20
ward Current 300
Transf. R.tio'
CoUector·to-8ese C," 0.1101 10 0.7 0.7 0.7 0.7 pF
.
Feedba::k Capaci·
,., "
Common-Bale Inpul 0.1 to 1 pF
Cib 0.'
Clpac:itanc.,c
eoUec:tor·to-BIIe rb'C c 31.9 I. 1. po

Time Constant" " "
Sm.II-5i....' Power G.ln
In Neutralized Com·
mon·Emltter Ampli· GpE
10.7
200
12
12 I. 21 ,. 21 21
18 25
dB
fierCircuit"
"
NoistFigure8 NF 200 I .• ... dB
'L... No. 4 IClltllrolll1dld: .... 12&11

bntr.......miNi ......._ _ of die CiDlIIICtOl'-to..... CIIPKIt.ara
wi" .... _ ......... nw .... COIVIIICtadtom. . . .d1armi....
CUat No. 4 I_I floati",.
447
POWER TRANSISTORS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
40936
20-W (PEP) Emitter-Ballasted Featum:
• For_Aar ..... B.mpllflor_
Overlay Transistor • 1.......I.mlt1ll..bollMlln• ......-
• 20 W(PEPI output (min.) at 30iMHz wl1h:
IIIn - 13 dB (mln.l; 0011_ offloiOMY - 40% (mln.l;
For 2- to-3()'MHz Single-Sideband Linear Amplifier Application$ I.....modulltlon dlnordon - -30 dB «-'1
MAXIMUM RATINGS,AbIoiulll-MlXlmum V.IM: • Low-Thormol-RooIste_ .........
CO~LECTOR-TO.eMITTER VO~ TAGE:
TRANSISTOR DlIBIPATION. •.• ••• ••. .. . . .,.
At _ tempemu.... up to 7&0(: •••••••• 50 W
With VIE. -1.& V ••••••••••••••••••• VCEV IllS V TERMINAL DESIGNATIONS
Wlthex....l~fttetr. . ._ At c:.M .......,....... 1bcMI 7&GC '. • • . . • • • D.... 11......1y
ot0.4WfC.
C~E
RBE-50 ••..•.....••.•.•••••..•••• VeeR 40 v' TEMPERATURE RANGE:
EMITTER-TQ-BASe VO~TAGE .... _...... VEao 4 V· ' - . Oporotlng 1Ju....1on1 ......... -16 10 200 'c
CO~LECTOR CURRENT: LEAD TEMPERATURE IDu,'ng_lngl:
Peok ............................ ..
ContlftUoUl ................... , ••••• 'C
.0
:u
A
A
A. d _ .. 1/32 In. 10.787 ownl from
1....IItIngWlfwfor 'OIITllX •. 0" • • • • 230 °c
'W a
JEDECTOoeO
ELECTRICAL CHARACTERISTICS,It ClIo T.--",te (TCI- 2&"c

STATIC
TEST CONDITIONS
DC DC
,
DC
COLLECTOR BASE
CHARACTERISTIC SYMBOL CURRENT LIMITS UNITS
VOLTAGE VOLTAGE
(mAl
(VI (V)
VCB VCE VBE IE IC MIN. MAX.
COli_Emitter
Susblining Voltage:
WithbosHm~ VCEV("') -1.5 20()11 65 - V
junction ,...... biased
With a.tarnal bose-1O-
.mltter ...istenco (RBE)-511 VCER("') 20()11 40 - V
Fig. I - Typical intermodulation distortion as
Emltter-to-B. . a function of output power.
Breakdown Voltage V(BR)EBO 20 4 - V
·
COII_-1O-Emltter CASE TEMPERATLM ITe) -IOQ-C
30 - 5.0 mA
NOT£'T,. "DErrtf
r-
Cutoff CUrrent 'CEO
USE OF IH'RAA£D
T Ie
COliocto'-1O-Baso
CUtoff el",.nt ICBO 60 - 10 mA
~
41-- MAX.
COI _ _ _ Copacitance
(f-l MHz) Cobo 30 - B5 pF
;· ~HOT-SPOT TtWERA'fUIIE
ITJS·aZOO"C
~ ·
I
··
Thermal Reststance
(Junctlon-1D-Coso) RUC - 2.5 ·C/W
~.
Ipuilld through In Inductor (26 mH); dutY flCtor - 60"-
,
DYNAMIC 13f).MHz SlngW/dBbImd Amp/If",,)

0.1
I . .. • 10
COLLECTOR-TO-EMITTER VOLTAGE IVcEI-V
, ... 100
TEST CONDITIONS
Fig. 2 - Maximum operating area for forward-
Bi: bias operation_
COLLECTOR OUTPUT DC
FREQUENCY
·.-
SUPPLY POWER CURRENT 1000
CHARACTERISTIC SYMBOL (MHz) LIMITS UNITS COLLECTOR SUPfl'LY VOI-TAGE: (Veel- 28Y
CASE TEMPERATURE (Te). 2S-C
VOLTAGE W(PEPI (mA)
·
(V)
- .
f MIN.
Vee POE IC MAX.
~ 100 /
!·
RFlnput_: ~
A_ P,E 28 10 30 20 - 0.5 W
Peak .nvelope (PEP) PIE 28 20 30 20 - 1.0 W I
_Gain GpE 2B 20 30 20 13 - dB I.I II

COlioctor Efficiency
Intermodulation Distortion *
1'IC
IMD
to_
28
28
20
20
30
30
20
20
40
- -30
-
"
dB ! ·• I
• ...,....,.. to either of the two .nd without the UII of fMdbIck to .,hln.. IIM11r1ty.
1.0
O.S 0.4
V
0.11 0.. 0.7 0.1 0.. 1.0
............
Fig_ 3 - Typical transfer characteristic.
448
____________________________________________________________________________ RFPOWERTRANSISTORS
40964,40965
Silicon N-P-N Overlay Transistors Features:
• High power pin:
6 dB (min.) up to f - 470 MHz (40864 trlpler)
High·Gain DeVices for Class C VHF/UHF Multiplier and Amplifier Service 7 d8 (min.) It f· 470 MHz (40!165 amplifier)
MAXIMUM RATINGS, Ablolute-Maximum Values:
COLLECTOR·TO·BASE VOLTAGE ..•••••...••......•.•...••........•... VCBO 36 V

COLLECTOR·TO·EMITIER SUSTAINING VOLTAGE:
With external base·to-emitter resistance
(RBE) = 3311 •..•••••...•.•.•..•.••..••.••••.••.••....•...••••• VCER('U.) 36 V
With bose open •••....••....••••••....•.•.•••.•.•........•.••.... VCEO('u,) 14 V JEDEC To-38
EMITIER·TO·BASE VOLTAGE •...••••••...••...••.•.•..••.•...•.••.... VEBO 2 V
CONTINUOUS COLLECTOR CURRENT ............•............•......... IC 0.2 A
At case temperatures up to 250C ......•••.•...•..•.•••.•.•..••...••.•• 3.5 W
TEMPERATURE RANGE:
Storage & Operating (Junction) •••••••••••••.•••••••••••••••••..••.•••• -65 to 200 DC
LEAD TEMPERATURE (During soldering):
COLLECTOR SUPPLY VOLTAGE (Vce I- 12V
At distances 2- 1/32 in. (0.8 mm) from seating plane for to $ max ••.•••••.•...••• 230 DC 1.5 CASE TEMPERATURE (Tc I z 25- e
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) • 2SOC
-
STATIC
CHARACTERISTIC SYM80L Vol. CurNnt UNITS
Vde "!Ado 40866
Vee IE 18 IC Min. MIX.
Collector-Cutoff Current ICEO 10 0 - 0.1 rnA 1>0 200 300 '00
Collec::tor-to-Base Breakdown Voltage V(BR')CBO 0 36 - V
FREQUENCY If 1-' MHz
Collector·to-Emitter Sustaining Voltage: Fig. I· Typical power output as a function of

With base open VCEO(·....) 0 SO 14 - V frequency for 40965.
OUTPUT FREQUENCY (f) -470 MHz
resista""" (RBE) = 33!l VCER('U') SO 36 - CASE TEMPEIIATUR£(TCI - 215-C
Emitter·to-Base Breakdown Voltage V(BR)EBO 0.1 0 2 - V
"'Co,-·-'2'11
Thermal Resistance:
(Junction·to-Case) R9JC - 50 DC(W '.iI!~"
apulsed through I 26-mH inductor; duty factor" 60%. ,
-
DYNAMIC ,~o

CHARACTERISTIC SYMBOL CoU_r Input Power Frequency 4086& UNITS
Supply IVee) - V de (PIEI-W (f) -MHz Min. Typ, Min. .Typ.
156.7-470 0.4 OM - .,.
Power Output POE
12
B
0.1
0.1
470
156.7-470
470
-
-
-
0.33 -
0.5
-
0.55
-0.33 W
'00 .
,
INPUT POWER IPIEI-IIIW
200 2"
12 0.1
156.7-470 6 6.4 - -
Power Gain GpE
470 - - 7 7.4
dB power input for 40964.
B 0.1
156.7-470 - 5.2 - -
470 - - - 5.2
12 0.1
156.7-470 25 - - -
Collector Efficiency ~C
470 - - 40 - %
0.1
156.7-470 - 25 - -
B
470 - - - 40
5 5
Collector-ta-Base
capacitance Cabo
VCB= 12V
IC=O
- 1 - maxJ - maxJ
pF
Gain·Bandwidth
Product tr
VCE -12 V
Ic=50mA - - - 700 - 700 MHz
INPUT POWER tPIE)-mW

power input for 40965.
449
RFPOWERTRANSISTORS ____________________-----------------------------------------------------
41024
1-W, 1-GHz Silicon N-P-N Overlay Transistor
High-Gain Device for Class B- or C- Operation in UHF Circuits
Features:
• '-watt output min. at , GHz (5 dB gotn)
MAXIMUM RATINGS, AbllO/u..-Moximum V./UBI:
• For IOnde applications
COLLECTOR·TO·BASE VOLTAGE. . • . . . . . . • . . . . . . . . • • . . . . . . . . . . . .. VCBO 55 V O.a.wllt output typo at '.68 GHz !VCC - 20 V)
With external base-to-emitter resistance (RBE~ .. 10 n ..... , .... , , ...... . 55 V
With base open . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , 24 V
EMITTER·TO-BASE VOLTAGE ...•....•.•..•.•••................. 3 V TERMINAL DESIGNATIONS
CONTINUOUS COLLECTOR CURREN, ....•...•.••..•.•............ 0.4 A
At case temperatures up to 26°C • . . . . . • . . . . . . . . • . . • • . . . . • . . . . . . . 3.5 W
At case temperatures above 2SoC . . . . • . . . . • . . . . . . . . . . . . . . . . . . • . . .
TEMPERATURE RANGE:
Storage and Operating (Junction)• . . . . . . . • . . . • • . • . • • • • • • • • • . • . . . . •
LEAD TEMPERATURE lOuring ool..... ing):
At distances ~ 1/32 in. (0.8 mm) from seating plane for 10 5 max. . . • . . . . . .
See Fig. 1
-66 to 200
230
aC
aC
,fj".," 9lCS-27512
JEDEC TO-39
ELECTRICAL CHARACTERISTICS, Cu. Temperature (TC) - 25"1:

TEST CONDITIONS
V._ CU.....
CHARACTERISTIC SYMBOL LIMITS UNITS
Vde mAde

Ves VCI 'E '. 'e Min. Mo••
With bale open ICEO 16 20

With base connected to emitter ICES 60
Collector-to-Be18
Breakdown Voltage VIBRICBO 0.1 65 v
CqIIClCtor-to-Emltter
Sustalnlnll Voltage:
With external ba. .to-emltter VCERIIU.1 66 v
....istanc. (RBEI- 10 n
Emitter-to-sa.
Breekdown Voltage VIBRIEBO 0.1 v
Collector-to-Emllt...
Saturation Voltage VCE(satl 'A 100 0.5 v
Collector-to-Ba18 CapttCitance '; ";': ['10,.',:, I.'
(Measured at 1 MHzl e.b 30 3.0 pF ;' ;:; I :'\ ; , .
Magnitude of Common-Emitter ·aCI 0 so 100 I!SO 200
SmelioSlgnai Short-CIrcuit CAS~ TEMPERATURE(TC)--C
Forward-Cur,ent Transfer Retlo Ihlel 15 50 8.0
fMealUrad at 200 MHz) Fig. 1 - Derating curve.
RF Power Output
Common Emitter Amplifier POUT 2B I' w
at 1GHz
'For PIN- O.31eW. minimum efficiency" 35~ •.
c· .FR£QUENCY It )-1,68 6HI

COLLECTOR·TO·EMITTER VOLTAGE {VCE'- 28 V CIRCUIT OF '18. 6
COLLECTOR CURRENT(Id-80mA
•I • CASE TEMPERATURE (T C)·215- C
,.
1.11 I 0.15
-":~_
I 1.00 0.4
1 '~~/NPfJ
eo
i
I. t ,.
-o.a . . I 0.7'
ID
I 0.' i 0.2
I
.. . .
L
E l 0.1
ID IR '101&202530 .. 40
FREQUENCY {1l-GHz 15 10 II 10
COLLECTOR TO DITTER VCUMIE (VeE 1-.t..ZIMItI COLLECTOR . SUPPLY IJOLTASE(Vccl-1J
"-21'71111
Fig. 3 - Typical rf power output es a function Fig. 4 - Typical oscillator power output 8S a
Fig. 2 - Typical power output 1'$. frequency_ of collector·to-emitter voltage_ function of collector supply voltage_
450
Power Hybrid Circuits
Technical Data
_ _ _ _- - -_ _ _ _ _ _ _ 451
POWER HYBRID CIRCUITS
HC2000H,HC2500
Multi-Purpose 7 -Ampere Operational Amplifiers
Linear Amplifiers for Applications in Industrial and Commercial Equipment Features:
• Bandwidth: 30 kHz at 60 W
The RCA-HC2000H and HC2500 hybrid- from 0.2 to 70 watts. At an rms output • High power output: up to 100 W(rms)
circuit operational amplifiers are designed of 50 milliwatts, the HC2500 has an • High output current: 7 A (peak)
for operation from either single or split exceptionally low typical intermodulation • Low IMD and THD
power supplies at output currents up to distortion of only 0.06 per cent. • Adjustable idling current
7 amperes and power outputs up to 100 • Stability with resistive or reactive loads
watts_ These versatile amplifiers are re- The HC2000H includes a load-line limiting
• Single or split power supply
commended for servoamplifiers, audio network that provides protection against
(30 to 75 V, single, ± 15 to ±37.5, split)
power amplifiers, driven inverters, power short-circuit loads and against high-energy
• Class AB output stage (HC2500)
operational amplifiers, deflection ampli- transients when the amplifier is used to
Class B output state (HC2000H)
fiers, solenoid drivers, voltage regulators, drive inductive loads. Both circuits also
• Direct coupling to load
and similar linear-amplifier power appli- feature adjustable idling current and direct
• Built-in load-line-limiting circuit to
cations_ They are supplied in a metal coupling to the load.
protect amplifiers from accidentally
hermetic package. short-circuited output terminals
High-reliability versions of the HC2000H
The HC2000H and HC2500 employ a (HC2000H)
are also available for ·use in aerospace,
quasi - complementary - symmetry output military, and critical industrial applica- • Reactive-load fault protection (HC2000H)
stage with hometaxial-base output transis- tions. These types are screened to four • Socket available
tors. They feature low distortion, with a reliability levels (/1, /2, /3, and /4) that • Rugged package with heavy leads
maximum total harmonic distortion of approximate the reliability classes of MIL- • Light weight: 100 grams
0.5 per cent over a bandwidth of 30 kHz STD-750. These slash-series types are the
at a power output of 60 watts and a electronic industry's first series of high-
TERMINAL DESIGNATION
typical intermodulation distortion of less reliability high-power hybrid-circuit op-
than 1 per cent at rms power outputs amps.
MAXIMUM RATINGS, Absolute-Maximum Values: HC2000H
HC2500
nOli
VS:
Between leeds 1 & 10 75V
10M • • • • - 7A
PT :
Per Output Device See Figs. 3 & 4
Tsts . . . . . • -55 to +125°C
TJ .•..• . -55 to +150o C 92.CS-27727
TL (During Soldering): HC2000H, HC2500

At distance ~1/8 in. (3.17 mm) from ca •• for 10. max.
t/>L (Min):
At distance ~0.075 (1.91 mm) from cas. 0.04 in. (1.02 mm)
+Vs
o.
~"'ATE
"2
10K
92CS-17574RI -ELECTRICALLY ISOLATED FROM INfERNAL CIRCUITRY.
Fig. 1 - Schematic diagram of type HC2000H Fig. 2 - Schematic diagram of type HC2500
operational amplifier_ operational amplifier.
452
HC2000H, HC2500
COMPARISON CHART SEE FIG. 4 FOR DEItATIJIG FOIl ~TM.I!TRICAL
... Vt!POR"SwtTHf>iIO" ••
OUTPUT
TYPE IMDIST. PROTECTION OPERATING FREOUENCY COMMUTATING
NETWORK MODE COMPENSATION DIODES
0.06% CAPACITOR ON
HC2S00 NO CLASSAB NO
@50mW SIGNAL TERMINALS
0.6% LC FILTER
HC2000H YES CLASS B YES
@200mW ON OUTPUT
HC2000H
ELECTRICAL CHARACTERISTICS. At Case Temperature (TC) = 25"C
so 75 125
TEST CONDITIONS LIMITS CASE Tf/llPflATUH (TC1-'"C
VS-V f -kHz PO-W RL-n MIN. TYP. MAX. Fig. 3 - Dissipation (dc) derating curve for
each output transistor for both types.
VOUT
~ ±37.5 4 25 4 - 2000 -
Open·Loop AVERAGE POII!It DISSIPATION II I!AOI
OUTPUT TRAMSISTlI't CAN IE CAl.CUUTlD
FROM 'T(AV)· Po ~.: AMD e"ICII!HCY
Closed· Loop ±37.5 1 1 4 26 30 - FROM ~ . ; ~. WHUt! Po IS THE OUTPUT

=:T~~. Ttll PEAl YALUE at' TttE
fOIl9'l'lCIEMCY DERATING AT HIGH
liN FREQUlMCIU,SEE PIG. It.
Measured between - - - - 16 18 - kn
leads 7 & 8
10 ±37.5 - - - 15 - 30 mA
via
Measured between ±37.5 - - 4 0 ±30 ±250 mV 25 50 75 1011 125 Uti
leads 4 & 5 CASETEMPERATUfIf(TCI_O(
VOUT ±37.5 1 100 4 28 32 - V Fig. 4 - Dissipation (average) derating curve

for each output transistor (for sym-
fH metrical wave-forms with f '>40 Hz)
(See Fig.9)
±37.5 - 1 4 43 - - kHz for both types_
THO
(See Fig. 10)
±37.5 1 60 4 - 0.4 0.5 % PQWERWPPLYSPLITIVS·±17·SVI
CASETEMPERATUREfTCI- lSO(
IS
(See Fig. 12)
±37.5 1 - 0 ±2 - ±3.85 A
SIN
lG = 600n
±37.5 - - - - 78 - dB
SR
(Unity gain, ±37.5 1 100 4 5 - - V!p.s
10M =4A)
6 ' 10K
FREQUENCYCfl_HI
ROJC
Per Output Device - - - - - - 2 °c/w Fig. 5 - Maximum efficiency vs. frequency
for several values of peak load cur-
(See Figs. 3 & 4)
rent for both types.
HC2500
ELECTRICAL CHARACTERISTICS,A' ea.. rempera",,. ITel =25'e and Supply VOIUf18 IVy = <375 V
REFER· TEST CONDITIONS LIMITS
ENCE OUTPUT LOAD
CHARACTERISTIC FIG. MIN. TYP. MAX. UNITS
SPECIAL FREO. POWER RESIST.
NO. NOTES til-kHz tPol-W tRLI-ll
Measured
Voffset Pin 3 to Gnd
- - 4 - - ±250 mV
Idling Cur-
10
rent < 1 mA
- - Open - - ±JO mA
VOUT Peak de voltage 0 200 4 28 - - V
fH - 1 4 43 - - kHz
THO 21 1 60 4 - 0.3 0.5 % LOAO PHASE AMGLE (.1 DEGREES
ACL 1 1 4 31 32 - Fig. 6 - Minimum load impedance vs. load

phase angle and safe area of opera-
R8JC 3.4 - - - - - 2 °C/W
tion for both types.
453
HC2000H,HC2500
HC2500
ELECTRICAL CHARACTERISTICS ICont'dl

Ty..... V.... lfor Doli., au_I. At Que Tem".,.."',. ITCl - 2ttC _ Supply VoJ_ IVSI - t:l7.5
REFER· TEST CONDITIONS LIMITS
ENCE OUTI'UT LOAD
CHARACTERISTIC FIG. _ER RESIST. MIN TYP. MAX. UNITS
"ECIAL FREG.
NO. NOTES Ifl.....H. IPOI-W IRLI-Il
AoL 16
Idling cur·
rent,. SOmA 1 26 4 - 70 - dB
VIO - 0 Open - '10 mV
110 - 0 Open - 7 - pA 1 2 l • 5 6
MINIMUM LOAD RESISTANCE (RL 1-0
liB - 0 Open - lO - p.A

Fig. 7 -- Maximum allowable supply voltage
RCM 0.005 0 Open - 1 - Mil
vs. load resistance for HC2000H.
VICR 0.6 100 4 - 32 - V

fREQUENCY It '-'.0 kHz
CMRR 0.005 0 Open - 50 - dB LOAO RESISTANCE I Jlll·lOOD
VRR 0.06 0 4 - 31) - dB

§\.
~
IMO 20
Idling cur·
rent"50mA - 0.06 4 - 0.06 -
'" z '0
~
AcL -2 ·0.& ~ :so
SR 2_ Ce ' l00.F Squire
Wove
- 4 - 4.3 - VI", ~> 20
61j 23 25'Cto l00"C - - 4 - 1 - mAJ"C
1000 2000 3000 4000

EXTERNAL FEED80t0t RESISTANCE 9!F8t-A
Fig. 8 -- Closed·loop voltage gain V$. external

feedback resistance for HC2000H.
MOTE, L()W.f'AE(NENCY RESPONSE DEPENDENT

Uf'ON INPUT H£T1fDRf(; SEE FIG. 2.
PO\IIIERSUPf'lY:SPLITIVS· ±37.5V)
~ 4
PEAl( OUTPUT VOL TAG£ NOM) • 21 V
!,.21--
~'r-~-+~~-+--rt++--~+-Hr
! '+-+~H-H-+--++t+"""'I-++ti
•
~\i ..."1--+-f-f-+-fcF=."",:::i::
~
I'·' '~$=$*$t=m$~ ..:::c=,t..-. -t--t-lt-l
~.'r--t--t--H+-t--t-t+t-+-t-I'+
lo·r---tI"'t-i-ii--+-++++-+--t.J.rt-t-
......
'" '=.,,:1:.:1-,
~··t-+-lN:t-t--t--++++-t-Vf-H+
~ 0.2 ·,r--t---t--Hf.....i:--t-t+t74-f-t+
100 II( 101(
'.1 0.2 0.4 O.6o.a 1 2
'.1 . , 810'
II
.68100 0.1 .2 0.40.60.81
r-
2 4 681C1 4 '1100
I'REQlJENCYII't-H. OUTPUT POWER "01 _ \II OUTPUTPOWERCPOI_W
Fig. 9 -- Output power vs. frequency for Fig. 10 -- Total harmonic distortion with split Fig. 11 -- In termodulation distortion with
HC2000H. power supply for HC2000H. split supply and 4·ohm load for
HC2000H.
OUTPUT YOLTAGE (Vol-'1
Fig. 12 -- Characteristics of built·in load·line- Fig. 13 -- Gain linearity characteristics

limiting circuit for HC2000H. for HC2000H.
454
HC2000H, HC2500
I., IfOXl LOAD RESISTANCE IRI.I-4 4
'_IIIHI MAX. OUTPUT
'. 5PI.IT pown POWER SUPPLY VOLTAGE IVsI-U7.,V
"I'~ ~
; ··
j SIJPPL'I'
MID-BAND OUTPUT POWER-Z5 W
~~
100 -- - -- : eo
T I
~'O~-4~-4---+---+--~-- i ... 'k
...
I ~"
w 60
~:l ffi
~ «!
. ···
8
I
CASE TEMPERATURE 1TC)-Z5·C

~ ~~-4~-4---+---+--~~~~~~
I '.r--r--r--+--~~~~-+~ ;. ,~ ... ~'o

~~~
~~~/.. ~~II
.
0 ICURVES MIJST 1£ DEIiIATED LINURLY
~ .0
co)~ ~~
·
~ WITH INCRUSE IN TEMPERATURE)
0
! w~~~-4---1~~~-b~' I III -".I'
•.1
t I . ..
10
QI OR Q9 COLLECTOR-lO-EMITTER VOLTAGE-V
.I .
'10 1 100
0
10' 10·
IIII
FREQUENCY It I-Hz
10!!
I
10'
::0.
UCS·21081RI
10'
,zeS-U!1015
Fig. 14 - Maximum operating area for Fig. 15 _. Output power 8S a function of .up- Fig. 16 - Typical open-loop voltage gain vs.
HC2500. ply voltage, with various value. of frequency for HC2500.
load resistance, for symmetrical sine-
wave operation for HC2500.
II
=:UVOL-=~v:.~;:,~ y =:rn"II""
• 0U1'NT POWEll! CPo) - 8 .
=-,. '"
1-'·
i I
-71
I'
.-100
i -".
I.. I., .
'100
-IT5
10 ... ... 10
,
FREQUENCY tf t - H I Ile,-Zlo'ZItI 10 10' 10' 10·
FREQUENCV III - Hz
I.' 10'
Fig. 17 - Typical open-loop phase shift vs. Fig. 18 - Bias resistor value vs. output idling Fig. 19 - Output power vs. frequency for
frequency for HC2500. current (Ii) for HC2500. HC2500.
~
I
10: :E="':L:~:C:V:~.*,7.11 v
~
'VI IUPllLY VOLTA.! IVlloU?,S V
L.OiD fln,.uNC! U'L)e. A
4 INIIUT SIGNAL: AM .....'TUDI: "1.".0 HII.!. I •
·,
IDLING CURRI!NT !I!T AT 50 IIA
s AMPLITUDE UH"" kHz) I I S AT TC.n·C
! ~ I
I
..".J
··
I
m
5
~
I
..
V
I,
5
"
I
j;ij
20llH
I~I:.
,/ W
".
~
~I
:- - tl seotflA
I :~~1~:'
Ii"1OO1II1o 0.181 IIHI'
I I
. , .. ,I .. . ... . "
~.,
0.01
ri~\'1
0.1
I
RMS OUTPUT POWE;' IFIol-W

10
nn::msmn
'tOo
m I
0.01
0.01
. ... . ... ... .I .I ..
~I I
I
RM! OUTPUT POWER-W

10 100
'IC:S-210HRI
RMS OUTPUT VOLTAGE tV01- v
Fig. 20 - Typical intermodulation distortion Fig. 21 - Typical harmonic distortion vs. rms
v•. rm. output power for HC2500. output powBr for HC2500. Fig. 22 - Input sensitivIty for HC2500.
100 200 300 400 500 100 700 800

CAlI! TEMPERATURI ITCI-·C COMPENSATION CAPACITANCE 1Ccl-PF
'ICS-USO'
Fig. 23 - Typical idling-current drift for Fig. 24 - Typical slew rate VB. value of com-
HC2500. pensation capacitor Cc for HC2500.
465
456 ___________________________________________________________
Triaes
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 457
TRIACS ____________________________________________________________________________________
T2300, T2301, T2302, T2310, T2311, T2312 Series

2.S-A Sensitive-Gate Silicon Triacs Features:
• Very high gate sensitivity-3, 4, and 10 mA
Mod. TO-5 and Mod. TO-5 with Heat Radiator Packages For AC Power Switching • di/dt capability-100 A/JlI
• Shorted-emitter, center·gate design
The RCA·T2300, T2301 , T2302, T2310, same as the T2300, T2301, and T2302 series, • Low switching losses
T2311, T2312 series triacs are gate·controlled respectively, but have factory·attached heat • Low on-state voltage at high current levels
full·wave silicon ac switches that are de- radiators and are intended for printed·circuit· TERMINAL CONNECTIONS
signed to switch from an off·state to an on- board applications.
state for either polarity of applied voltage
with positive or negative gate triggering
The gate sensiti vity of these triacs perm its ~GATE
the use of economical transistorized control
voltages.
The T2310, T2311, and T2312 series are the
circuits lhd enhances their use in low·power
phase-control and load·switching applications.
MTIr:J¥T2
MAXIMUM RATINGS, Absolute-Maximum Values: T2300
For Operation with Sinusoidal Supply Voltage at Frequencies T2301
Up to 50/60 Hz and with Resistive or Inductive Load T2302
Serie.
3 mA Gata T2300F T2300A T2300B T2300D
4 mA Gata T2301F T2301A T2301B T2301D Modified TO·S
10 mA Gata T2302F T2302A T2302B T2302D
3 mA Gata T2310F T2310A T2310B T2310D
~
4mA Gata T2311F
10mA Gate T2312F
T2311A
T2312A
T2311B
T2312B
T2311D
T2312D M~~i~
0 0'"
V OROM•
Gate open, T J=-40 to 10o.°C •..•••.•...... 50 100 200 400 v II a a NG
IT(RMS) (e = 360 0 ),
~;: ~~~~ :::::::::::::::::::::::::::::: ;:: - - - - - A GATE

A
MT
For other conditions .••........••..•....•. _ _ _ _ See Figs. 2,3.4,5 _ _ __ HCI·.'....
ITSM' T2310
For one cycle of applied principal voltage, T2311
at current and temperature shown T2312
Sari••
above for IT(RMS)'
60 Hz (sinusoidal) •..................... _ _ _ _ _ _ _ 25 _ _ _ _ __ A Mod. TO-5 with Heat Radiator
50 Hz (sinusoidal) . . . . . . • • . . . . . • . . • . . . . • 21 _ _ _ _ __ A
For more than one cycle of applied
principal voltage ....•..................... - - - - _ 5 e 8 Figs. 6,7 _ _ __
dildt,
Vo = VOROM,IGT =50 mAo
t.=O.II" .................... - - - -_ _ 100 - _ _ __ AIl'S
12 t [At T C shown for IT(RM5)J ,
t = 20 ms ............................... _ _ _ _ _ _ 4.3 _ _ _ __
= 2.5 ms . . . • • • • . . . • .• • • . • • • • • • . ••. . . •• • 2 _ _ _ _ __
= 0.5 ms .. . . . . . . . • . . . . • . .. . . . . . .. • . •• • . 1 _ _ _ _ __
For other time value, •...••••.••......••.• See Fig. 7
IGTM·'
For 1 I'S max. . ...••..•..•..••.•••.•••... _ _ _ _ _ __ A
PGM'
Peak (For 1 I'S max .•
IGTM .;;; I A(peak) •..•••••...•.••...•••• _ _ _ _ _ _ 10 _ _ _ _ __ w
---
PG(AV)'
~;: ~~~~ :::::::::::::::::::::::::::::: ______ ~:6: _____ 'ULL-C'tCI.!. flMl QN.-ITAT£ CUIU'!NT ITI.IA-A
;~i·. ::::::::::::::::::::::::::::::::::::: =: :: :: Fig. 1-Power dissipation vs. on-state current.
0 ,- I"OW
CURRENT WINIIfOIlM: SINUtOmAL
TT·' U)AO IIlUISTIVE OR INDUCTIVE
During soldering for 10 s maximum ~DU.fl:~R~~ W~~ASU.D

AI SHOWN ON OUtlNIIONAL OUTL.INE
at distance;;' 1/16 in. (1.58 mm) from seating plane _ _ _ _ _ 225 _ _ _ _ __ ,-
--..~~
I
W
• For either polarity of main tarminal 2 voltage (V MT2 ) with reference to main terminal 1.
r
eo
• For either polarity of gate voltage (V G ) with reference to main terminal 1 .
• For temperature measurement reference point, see Dimensional Outlines.
;i
I~
fULL-C't(:LE: RIllS ON-STATE CURR!NT [1TIR"I)]-&
Fig. 2-MaxiTrl um allowable case temperature vs.

on-state current.
~8 ____________________________-------------------------------------
TRIACS
T2300, T2301, T2302, T2310, T2311, T2312 Series

At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature ITC)
LIMITS
FOR ALL TYPES
Except as Specified
Min. Typ. Max.
IDROM"':
Gate open, TJ=100oC, VnROM=Max.rated value - 0.2 0.75 mA
VTMA:
iT=10 A(peak), T r.=2!i°C - 1.7 2.2 V
IHOA: (See Figs. 9 & 10)
Gate open, Initial principal current=150 mA (de), FULL-CYCLE RMS ON-STATE CURRENT [XTONSI] -A
vD=12 V, TC=250 C
Fig. 3-Maximum allowable ambient temperature
(T2300, T2301, T2310, T2311 series) - 2 5
mA VB. on-state current for T2310, T23",
(T2302, T2312 series) - 7 15 T2312 series.
dv/dt (Commutating)"':
vD=VDROM' IT(RMS)=2.5 A, commutating di/dt=0.95 Alms,
gate unenergized, TC= lOOoC 0.5 - - V/}).s
CI.ltMNT~:SINIJIOI)AL
L.OID: R£StSTM: DR INDUCTIVE
CONDUCTION ANGU 1t1:3IO-
. 9*"
dv/dt (Off.state)"': :".,,~s:.:
""TtlNII,n:IIINIII-
vD=VDROM, exponential voltage rise, gate open, 1ITUIt. . . . .IUIIID ON
,.AT IINIC V4"1'ItOM
usrCA'-.
TC= 90°C (T2300, T2301, T2310, T2311 series) 3 5 - Ll!ADLDGTM'I~
VI}).s
T C=lOOoC (T2302, T2312 series) 6 10 - MOuNTING ...J.lL •
@ @pt'
IGT...·: (See Figs, 13 & 14) FOItOt:YlCt:SCILDIIIIO
ON VIf"-THlClCCOfINR
vD= 12 V dc, R L=30 n, T C=250C HUT .... TE,,"R-
ATUII£ MfASUllfD CW
tEATSlNItllll'FItOM
Mode VMT2 VG CAKC.P,
LEe LENGTH' I"
1+ positive positive o.~ I ~s 2.5

FULL-CYCLE RMS ON-STATE CURRENT [I.ltRMSI1-A
T2300, T2310 series - 1 3
T2301, T2311 series - 1 4
Fig. 4-Maximum allowable heat-sink temperature
T2302, T2312 series - 3.5 10 VS, on-state current for T2300, T2301,
111- negative negative T2302 series.
T2300, T231 0 series - 1 3
T2301, T2311 series - 1 4
T2302, T2312 series - 3.5 10
mA
1- positive negative
T2300, T2310 series - 2 3
T2301, T2311 series - 2 4
T2302, T2312 series - 7 10
111+ negative positive
T2300, T2310 series - 2 3
T2301, T2311 series - 2 4
T2302·, T2312 series - 7 10
VGT.... : (See Fig. 15)
vD= 12 V dc, R L=30 n, T C=250C - 1 2.2 Fig. 5-Maximum allowable ambient temperature
V
vD=VOROM, RL = 3kO , TC=100oC 0.15 - - vs. on·state current for T2302 series.
tgt'
vO=VOROM' 'GT=60 mA, t r =O.l }).s, iT=10 A(peak), UfIlY FREOUENCV-SOI8O Hz
~cW-~T~~~URRENT [ITtRMSI] o2.5AH--t---t--t--I-1
TC=250 C - 1.8 2.5 }).S ~ CASE TEMP£RATURE {Te'" 7O-c
ROJC: ~E"i1 e r-~ r--

r--- GATE CONTROl MAY BE lOST DURING ANO-
Steady· state - - 8.5 :::'LE.LY FOLLOWING SURGE CURRENT -
ROJA - - 150
°CM I- I-
~~z
20 r--
~
OVERLOAD MAY NOT BE REPEATED UNTIL
JUNCTION TEMPERATURE HAS RETURNEO TO
.. For either polarity of main terminal 2 voltage (V MT2 ) with reference to main terminal 1.
no
11:'- k",
~
~; u ~L......f---+-f"'~
STEADY-STATE RATED VALUE
• For either polarity of gate voltage (V G) with reference to main terminal 1. T ~HZ-tti--i--i-tti
50HZ~
10 4 6 8102
SlRGE CURRENT OURATION-F\JLL CYCLES
Fig. 6-Peak surge on·state current VS.

surge-current duration.
459
TRIACS
T2300, T2301, T2302,T2310, T2311, T2312 Series
• • 10
TIME (1)-_ POSITIVE OR NEGATIVE INSTAHTANECUS ON-STATE YOLTAGE ('T)-V
,tu-ItUttS
Fig. 9-DC holding current (positive or negative)
Fig. 7-Peak surge on·state current and Fig. 8-0n-state current vs. on-state voltage VB. case temperaWre for T2300, 12301,
fusing current vs. time. for all standard series. T2310, 12311 series.
CASIE TEMP!RATUR£ "cl--C
Fig. 10-DC holding current (positive or negative)

vs. case tamperature for T2302, Fig. 11-Gate-trigger voltage vs. gate-trigger current Fig. 12-Gate-trigger voltage vs. gate-trigger current
T2312 series. for 12300, 12301, 12310, 12311 series. for T2302, T2312 series.
-10 0 10 I I
CASE TEMPERATURE 1TCI--C CAS£ TEMPERATURE (Tcl--c
CASE TEMPERAT\JRE ITCI-"C
Fig. 13-Gate-trigger current vs. case temperawre Fig. 14-Gate-triggercurrentvs. case temperature Fig. 15-Gate-trigger voltage vs. case temperature.
for T23oo, 12301. for T2302, 12312 series.
460 ________________________________________________________ ~ ______

____________________________________________________________________________________ TRIACS
T2303 (2N5754-2N5757), T2313 Series

2.5-A Silicon Triacs Features:
• Gate sensitivity -25 mA
Modified TO-5 and Modified TO-5 with Heat Radiator Packages • dildt capability -100 Alps
For AC power Switching Applications • Shorted-emitter, center-gate design
• Low switching losses
The RCA-T2303 andT2313 series triacs The T2303 (2N5754-571 series types em- • Low-on-state voltage at high current
are gate-controlled full-wave silicon ac ploy a hermetic modified TO-5 package. levels
switches that are designed to switch from The T2313 series types employ a hermetic TERMINAL CONNECTIONS
an off-state to an on-state for either modified TO-5 with a factory-attached
polarity of applied voltage with positive heat radiator packcge. fY'SGATE
or negative gate-triggering voltages.

MAXIMUM RATINGS, Absolute-Maximum Va/U8$: MTI~MT2
For Qptlrlltion with .inwoidal.upply voltage at fffIQutNIcift. up to 50/60 Hz and with T86i,tirIfJ or lrrt/uctiwlOild
BOTTOM VIEW
.V~:~~n. TJ =-6510 100°C T2303 12N5764-571 Sari..

IT fRMS)C6 = 3600cI:
• Te" 700C (T2303seriesl ...
T A = 26°C 1T2313 series) •..
For other condit.ons ...
ITSM:
~
IIT2 RADI"\~
For one cycle of applied principal vohage. at current
and temperature shown above for ITIRMS):
60Hz (sinusoidal) •.••• , . . . • • . . • • • • • .
50 Hz (sinusoidal) •.
Fer more than one cvde of applied principal voltage
di/dt:
A0 0
VD = VOROM' 'GT = 50 mAt Ir = 0.1jJ.5 o 0 . . . ,...
12t (At T C shown for ITIRMS)l:
t=20ms ... GATE 0 0
1=2.Sms .. .
t= a.5ms .... . liT
For other time values •.••.•••..•.. 8OTTOM VIEW . .-tna
·'GTM-
For tlJS max. (See Fig. 9) . . . . . • . . . . . T2313Serin
PGM :
Peak (For 1 tJ.s max., IGTM <:; 1 A (peak). (See Fig. 9) •••..
·PGIAV)- T c = 7OUC. • • . . .•.
·Tstg• • ~~.=.~~~ :.:: : : : : : : : : : : : : : : : : : : : : : :

·TC• .. , , ..... .
TTII: •••••.•. , •• ,.
During soldering for lOs maximum at distance> 1/16 in.
11.58 mm) from seating plane· ..••.•••
lOW
If1 J-
CLMRENT WAVEFORM: stNUSOIDAI.
LOAD: RESISTIVE OR INDUCTlV£
CONOUCTIOfrI ANGLE 11):560"
CASE T£MPERATURE ITCI:II1lA5URID
AS SHOWN ON DIMENSIONAL OUTLINE
0Kr
~~
if
"' .
"!
ii
:~
, ,
I 2 !
'ULL-CYCLE RMS ON-srAT£ CURRENT [ITIRMS1]-A nCS"S7'411'
4
FULL-CYCLE RM5 ON-STATE CURRENT [ITIRM81]-'" HLt-"II"S FUL.L.-CYCLE R. ON-STATE CURRENT [ITtRfllSl]-A tlU-_~
Fig. 1 - Power dissipation vs. on-state current. Fig. 2 - Maximum allowable case temperature Fig. 3 - Maximum allowable ambient tem-
CURA£NT WAlEFORM: SINUSOIDAL . iT vs. on-state current. perature vs. on-state current.
_..........
LOAD: R£S1STIIII OR IN)UCTIVE
CONDUCT'ON ANGLE (,,:560-
:,,~s::.:
s-.TIW'III-
..AT
I
~~
.........
HEAT""'-"'"
LEAD LDGTN_I-
~15 80 MOUNTING
®r'IH-....
~i~70
@
...............
OfiIIIII"-THICKCCIPPU
;-
. gflOUNTING HEollSNt.TEIIIP£It-
ollUN' MEASIMD ON
® ........ 1Jlf1'flClll
= '" CAII'CAP,
... ...
FULL-CYCLE RMS ON-STATE CURRENT [IT(RM51]-A
LEAD LENGTH.,"
4 6 1 102
10
SURGE CURRENT DlRATION-fULL CYCLES 4 • 810
TIME Ctl-I\UI HCS-U41O
Fig. 4 - Maximum allowable heat-sink tem- Fig. 5 - Peak surge on-state current vs. surge- Fig. 6 - Peak surge on-state current and
perature VS. on-state current. current duration. fusing current vs. time.
461
TRIACS ____~--~---------------------------------------------------------------------------
T2303 (2N5754-2N5757), T2313 Series
ELECTRICAL CHARACTERISTICS. At Mllxttnum RlltinfJI Unless Otherwise Specifitld and at IndicflNd C- TtN7IfJIIf'4- (T cJ
LIMITS
For All Ty...
CHARACTERISTICS Except ., Specified UNITS
MIN. TYP. MAX.
" IOROM"':
Gate open. TJ = 100"e, V OROM = Max. rated value . . . . . . . . . . . . . . . . . 0.2 0.75 mA
VTM"':
iT = 10 A (peak), TC = 25°C ................. , ............• 2.2 2.6
V
iT =3.5 A (peak), TC =25°C ....................•.......... 1.8
IHO"': (See Fig. 7)
Gate open, Initial principal current = 150 mA (de), vo =12 V
TC = 25°C ........................................ . 6 35
mA
= -65°e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 82"
dvldt (Commutating)"':
vo = V OROM, IT(RMS) = 2.5 A commutating dildt = 0.95 Alms,
gate unenergized, TC = 70°C ................•...........•.. 0.5 V/",s
" dvldt (Off·State)"':
vO = VOROM' exponential voltage rise, gate open, TC = l00"C: ........ . 10 100 V/",s
IGT ...·: (See Fig. 10)
vo =12 V dc, RL =,30n, TC = 25°C
Mode VMT2 VG
positive positive 5 25
negative negative. , . . . . . . . . . . .' ....... , ..... . 5 25
1- positive negative. , . . . . . . . . , . . . .. . .. , ......... . 10 40
111+ negative positive . . . . . . . . . . , . . . . . . . . . . , .... . 10 40
vo = 12 V dc, RL = 30n, TC =-65°e mA
Mode VMT2 VG
positive positive . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 50"
negative negative .. , . . . . . . . . . . . . . . . . . . , .... . 30 50"
positive negative ....... , . . . . . . . . . . . . . . . . . . . . . 40 100·
negative positive .. , . . . . . . . . , . . . . . . . . . , .... . 40 100·
VGT ...·: (See Fig. 11)
vo = 12 V dc, RL = lOn, Tc = 25°C •...... , . • . . . . . . . . . . . , .... . 0.9 2.2
= -65°C ..... , . . . . . . . . . . . . . . . . . . . 1.5 3"
V
Vo = VOROM! RL = 125n, TC = l000 e . . . . . . . . . . . • . . . . . . . . . . . . . 0.2
tgt:
vo = VOROM' IGT = 60 mA, tr = 0.1 "'S, iT = lOA (peak) Te = 25°C 1.8 2.5 ",5
. Steady·State 8.5
°C/W
ReJA:
Steady·State 150
" In accordance with JEOEC registration data format (JS·14, ROF·2- filed for the JEOEC (2N-5eries) ty ....
... For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.
• For either polarity of gate voltage (VG) with reference to main terminal 1.
462 ____________________________________________________________ ~--

_____________________________________________________________________________________ TRIACS
T2303 (2N5754-2N5757), T2313 Series

'00,,
. TltlGot:RING MODEl' ALL
~r"J =:'~~~CAT"
-~PUI.K DURATIDN LlMlry
~
.,
TIUOor:lt1NO IIOINTI "0.1/
>
I 0
'IY~' •
~q,~.~
}:IO
.•
i~
~
,,
~w
.8
!I~
Jl~~~f7
~~ ~:I
:i ~.,
0
UPPU UNIT Of PI. .....IIILE
AVIIWII COCI GATE POWIII'
.
I OInlMTION . liT "ATIO
;&- :
H
CONDI1IOM.
I
.~~
;.0.'' ',
t.tJ.'1.
1I~
...
~ ~ !!
. 0
0.101 0 4
I
• 'DOl
MAII,M:" UTI!,
PULIE'"
0 4
DC .AU TltlGlO C""'ltINT tI,,)-A
''d, 0
T
4 "1
Fig. 7 - On'state current vs. on·state voltage. Fig. 8 - DC holding current (positive or IPOSITIW CIII NnATIWI
negative) vs. case temperature. Fig. 9 - Gate·trigger characteristics and
limiting conditions for determination
of permissible gate·trigger pulses.
............
Fig. 10 - DC gate· trigger current vs. case tem· Fig. 11 - DC gate·trigger voltage vs. case tem'
perature. perature.
463
TRIACS
T2304, T2305 Series

400-Hz, O.SA Sensitive-Gate Silicon Triacs
For Control-Systems Application in Airborne and Ground-Support Type Equipment
_1. .
RCA T2304- and T2305-series triaes are gate-controlled and 208 V RMS .sine wave and repetitive peak Off.fllg8
full-wave silicon ae switches. They are designed to switch voltages of 200 V and 400 V.
Featum:
from an off-state to an on-state for either polarity of applied • HIgh ..... lInIiiivity. IGT" 10140 mA max.
voltage with positive or negative gate triggering voltages. The high gate sensitivity of these triae. permits the use of • dildt caplilllity • 100 AI".
economical tronsistorized or integrated control circuits and • !=om.atld., ./dt
_Hz_bility
These triaes are intended for operation up to 400 Hz with enhances their use in low-power pl:tase control and load· .SItorIod-Em_ Doli",
resistive or inductive loads and nominalli"e voltages of 115 switching applications.

For Operation with Sinusoidal Supply Voltage at Frequencies up to 400 Hz and with Resistiveor Inducthle.LOtId.
T.!304B T2304D
T.!JOSB T.!3OSD
REPETITIVE PEAK OFF-STATE VOLTAGE:*
Gate open, TJ ::: -50 to lOOOC .............. . VOROM 200 400 V
RMS ON-STATE CURRENT (Conduction angle" 360 0 ): IT(RMS)
Case temperature (TC) '" 900 C ...................•... . .•.••.••.•......•..•... , O.S A
Ambient temperature(TA) '" 25OC. without heat sink .. ,... , .......•..•..•.....• , .•. 0.4 A
For other conditions ........• , .•. ,.,., .•.............•.• , .•..•...•..•.•..... See Figs_ 2 & 3
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: ITSM
For one cycle of applied principal voltage, TC'" 90°C
400 Hz (sinusoidal) ................................•••.•....•....•.........•..... so
60Hz (sinusoidaJ) ., .......... " ......................•.••••.•.•..•..•.•...•..•.
SO Hz (sinusoidal)! •. _•••••••••••••••••••••••••.•.•••.••••••••••••••••••••••••• '•.
For more than one cycle ofapplied principal voltage •.•.•.•..••.•..•..••... , •..
25
21
See Fig. 4
"""
RATE-QF-CHANGE OF ON-STATE CURRENT: dijdt
VDM ::: VDROM, IGT '" 60 rnA, tr '" O.IIA 100 AI",
FUSIN~ CURRE~ (for triac protection): Modified JEOEC TQ.5
=
TJ '" ·50 to 100 C, t 1.25 to 10 ms, ..•...••...•.•........•..•.••..• , ••.••..•....•• L21 ,,2,
IGTM
rwIG~~~ix~IGf!'i!f,2RMN~:.·., .....•...••...•...••.....•.......•. , ...... , ....••
GATE POWER DISSIPATION:
PEAK (For I J,lS max., (See Fig. 10) ••••.••••••••••••••.•.••••.•••••••••••••••••••••• PGM 10
"
W
w
~g:m
AVERAGE (At TC '" 600(:) •••.••••••••••••••••••••••••.••. : ••••.•.••••.•.••.•••• O.IS
(At TA" 25OC, withOlltheat sink) ..•.......•...••••.•..•.••..••.••.••. _ •. O.OS w
TEMPERATURE RANGE:.t.
Storage .........•..........••.•..•..................•.•••.••.•.••.•••.•..•. " •.. -SOlO ISO ac
Operating (Case) •..•..•.•...........•.....•..••••..•.........•.••.•••.••.••.••.
LEADTEMPERATURE (During soldering):
¥C" -so to 100 ac
At distances~ 1/16 in. (1.58 mm) from the case for 10 s max.............................. . TL 22S ac
* For either polarity of main terminal 2 voltage (VMT2) widl reference to main tenninall .
• For either polarity of gate voltage (VG) with reference to main tenninal 1.
.t. For temperature measurement reference point, see Dimensional Oudine.
At Maximum Ratings and at Indicated Case Temperature IT C) Unless Otherwise Specifi.:l
LIMITS
T2304 Series T2305 Series
Min. Tw. Max. Min. Typ. M...
PMk Off-S1atl Curnnt:' IDROM
Gate open. TJ = 1000C. VDROM '" Max. rated value FULL C"tCLI! MIa ott-STATE CUIHllNT [ITI .... ] -A
0.2 0.75 0.2 0.75 mA _-17011
"'xlmum On-...t. Vottate':'
For iT" 10 A (peak), TC" 2!;OC.......•.•.....•... , 1.7 2.2 1.7 2.2 V Fig. 1-Power dissipation VS. on-state current.
DC Holding Current:.
Gate open, Initie1 principal current - 150 rnA (OCl. vO" 12 V.
TC .. 2SOC..................................... IHO 716 1630 mA
For other case temperatures· .•...••..•...•.•. _ s . . F · , ••• ____
Critical Rlte-of·Ri. of Commutation Voltage:1
For vQ .. VOROM, I(T(RMS) '" 0.6 A, commutating
di/dt .. 1.B Alms, gate unenergi2ed. TC" 900C dvidl
CrlIIcII R_of-RI.. of Off.SUIgo Vol....:.

For Vo .. VOAOM. exponentall vottage rise. gate open. dvldt
TC"'000C ........•.•.•.......... " 10 100 10 1011 VI".
DC Chte-Trl.... CUf',.:1 Mode VMT2
ForvO -12 V (DC), It positive positive 3.5 10 26
RL"30 n m- negative I'IIgIItive 'GT 3.5 10 26
mA
r
-1, J22J
T C = 250C positive negative 10 10 40
m+ negative positive 10 10 40
For other case temperatures .•.••....... See Fi ... 1 1 . , 2 _
DC o....Tri_ VoI.... :.t
Far YO • 12V lOCI. RL' JOn Tc' 26"<:
For other case temperatures ....•....... VGT . . . - - Sell Fig. 13--"'"
1,12.2 V
For YO' VOROM. R • 1260. T c " l00<>C 0.16 0.15
Glte-ControHed Tum-On Time:
(Delay Time + Rise Time)
For vo ,. VOROM. IGT" 60 rnA. t r .. 0.1 ,..,
iT"10A"I_I. TC" 260(; ISee Fig. 181
... 1.8
Fig. 2-Maximum allowable cese temperature
vs_ on-state current.
2.6 1.8 2.5 ".
_-.J.".tio...... C'O:
8.5 8.5 aclW
, For either polarity of main terminal 2 voltage (VMT21 With reference to matA terminal 1.
t For either polarity of gate voltage IV G) with reference to main tenninal1.
464 _ _...,.-_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
TRIACS
T2304, T2305 Series
~
SUPPLY FIlEOUENe.."".OO"
lOAD, RESISTIVE
RMS ON-STAT[ CURRENT[IflRM8l]-O.5A
CASE TEMPERATURE ITe j" go·c
I I 0.7 CASE TEMPERATURE ITc)-25-C
~
~ 50 I" 1 J JI
~ GATE CONTROL MAY BE LOST OURING AND
~';' IMMEOIATELV FOLLOWING SURGE CURRENT
INTERVAL.
!:::-.40
~~ ~" ()\IERL.OAD Mft.Y NOT BE REPEATED UNTIL
JUNCnON TEMPERATURE HAS RETURNED TO
~~ '"
STEAOY-STATE RATED VALlJ(.
~~ ~ I' I I
!U 2.0
~ "'::::::: ~
"'., 0.1
... , ...- . ... ::--

10
['0 •• I -,-
, Qe Q7 0., 09 I 1.1 1.2 U 1.4
10 10' 10' Off~STAT[ VOlTAGE (yTl- V
SURGE CURRENT ~ATION-FULL. CYCLES (POSITIVE OR NEGATIVEl
FULL CYCLE fBlS ON-STATE CURRENT (rT(ItIISJ] -A '2CS-11OM
Fig. 3-Maximum allowable ambient temper-

ature vs. on-state current for the Fig. 4-Peak surge on-state current vs. Fig. 5-0n-state current vs. on-state
package/mounting options of surge-current duration. voltage (steady·state condition).
these triacs.
•
INlTMTANEOUI ON-ITATE YOI.:rAIE hT)-Y
I P'OIITIY£ 011 HHATIYEI
tacS-IJOI'r
Fig. 6-0n·state current vs. on·state Fig. 7-DC holding current vs. case Fig. 8-DC holding current vs. case
voltage (surge condition). temperature for T2304 series. temperature for T2305 series.
rA'IGG£RING MODES: ALL

4 ~~:s~ ::S~~~~CA;:;rE=S-+-+-H_~~-+.H
TRIO.ERtHG POINTS.
" CASE TEMPERATURE tTc1-'"C
~ I Fig. 10-DC gate-trigger current v•. Fig. 1'-DC gate· trigger current vs.
case temperature for T2304 case temperature for T2305
Fig. 9-Gate-trigger characteristics and series. series.
limiting conditions for deter-
mination of permissible gate-
trigger pulses.
CASE TEMPERATURE
Fig. 12-DC gate-trigger voltage vs.

case temperature.
465
TRIACS ______________________________________________________________ ~ _________
T2320, T2322, T2323, T2327 Se~es

Features:
2.S-A Sensitive-Gate Silicon Trlacs
• Very high gate sensitivlty-3,5 and 10 mA
For AC Power Switching • di/dt capability-100 A/Ils
• Shorted-emitter, center-gate design
The gate sensitivity of these triacs permits • Low switching losses
The RCA-T2320, T2322, T2323 and T2327,
series triacs are gate- controlled full-wave the use of economical transistorized or • Low on-state voltaga at high current levels
integrated circuit control circuits and en- • Glass-passivated chip for stability
silicon ac switches that are designed to
hances their ·use in low-power phase-control • Package and formed-lead options available
switch from an off-state to an on-state
for either polarity of appl ied voltage with and load-switching applications.
positive or negative gate triggering voltages. All types in each series utilize the JEDEC-TQ.
202AB (RCA VERSATAB) plastic package. TERMINAL CONNECTIONS
TERM 4
For Operation with Sinusoidal Supply Voltage at Frequencies Up to 50/60 Hz
"~--~~
""'EF LPrW:::
and with Resistive or Inductive Load
3 mA Gate T2320F T2320A T2320B T2320C T2320D T2320E
10 mA Gat. T2322F T2322A T2322B T2322C T2322D T2322E
25 mA Gat. T2323F T2323A T2323B T2323C T2323D T2323E
5 mAGote T2327F T2327A T2327B T2327C T2327D T2327E TOP VIEW
VOROMA TERM 3 2 I
Gote open, T J--40to 1000C......... 50 100 200 300 400 500 V
IT(~~~)7~;C~~~~).: •........... , ..... .
92CS- 29320
2.5 A
TA = 25°C •...........•.....•.... 0.8 A JEDEC TO-202AB
For.other conditions See Figs. 3 and 4 (Type 1 Package)
ITSM :
For one full cycle of applied principel
voltage, at current and temperature
shown above for IT(RMS): 25 _ _ _ _ __
60 Hz (sinusoidal) .............. . _ _ _ _ _ _ _ 23.5 _ _ _ _ __ A
50 Hz (sinusoidal) .............. . A
For more than one cycle of applied
_ _ _ _ _ _ _ See Fig.5 _ _ _ _ __
principal voltage ................. .
di/dt:
VO=VOROM,IGT=50 mA, _ _ _ _ _ _ _ _ 100 _ _ _ _ _ _ _ AI,...
t r = 0.1 ,..s (See Fig. 10) . ............ .
12t (At TC shown for IT(RMS)) (Half-sine wave): _ _ _ _ _ _ _ 3.4 _ _ _ _ __
t· 20 ms ........................ .
= 2.5 ms ..........•.........•...
0.5 m•. ~ ..................... .
_______ 1.; _______ A2s
A 2•
A 2s
For other time values .............. . See Fig.6 _ _ _ _ __ Fig. 1 - PrinCipal voltage-current characteristic.
'GTM":
For 1,... max .....•....•.•..••..•.. A
P GM :
Peak (For 1 IlS max.,
IGTM .;;;; 1 A(peak) ................ . 10 w
PG(AV): . _ _ _ _ _ _ _ 0.1 _ _ _ _ __
~;: ~~~~ ::::::::::::::::::::::: _ _ _ _ _ _ _ 0.05
_ _ _ _ _ _ _ -40 to 150 _ _ _ _ __
~i:::::::::::::::::::::::::::::: 40 to 100 _ _ _ _ __
TT·:
During soldering for 10 s maximum at distance
225 _ _ _ _ __
;;;'1/16 in. (1.58 mm) from seating plane
A For either polarity of main terminal 2 voltage (V MT2) with reference to .main terminel
" For,ither polarity of gate voltage (V G) with reference to main terminal 1.
1.
• For termp.rature measurement reference point, see Dlmensionsi Outlin(Jf.
FULL-CYCL.E RMS ON-STATE CURRENT {tT(RMSI]-A
Fig. 2 - Power dissipation as 8 function of on-state

current.
466 __________________________________________________________________________________
____________________________________________________________________________ TRIACS
T2320, T2322, T2323, T2327 Series

ELECTRICAL CHARACTERlmcs
At Maximum Ratings Unless Otharwise Specified and at Indicated ease Tamperature (TCI
LIMITS
FOR ALL TYPES
CHARACTERISTIC Except as Specified UNITS
Min. Typ. Max.

IOROM·:
Gate open, TJ = 1000C, VOROM = Max. rated value - 0.2 0.75 mA
VTM·:
iT = 10A(peak), TC= 25°C T2320, T2322, T2327 serie - 1.7 2.2 V
iT= 10A(peak), TC=250C T2323 series - 1.7 2.6 FULL-CYCLE RMS ON-STATE CURRENT [XTfRMSI]-A
. I HO": Fig. 3 - Maximum allowable temperature as a

Gate open, Initial principal current = 150 mA (dcl. a function of on~state current for
vO=12V,TC=250C - 15 30 mA T2320, T2322. and T2321.
dv/dt (Com mutating).:

vo = VOROM, IT(RMS) = 2.5A, commutating di/dt =
1.8 Alms, gate unenergized, T C = 90°C 1 4 - V Ills
dv/dt (Off·state)":
vo = VOROM, exponential ~oltage rise, gate open,
TC = 1000e 10 100 -
IGT": (See Fig. 8)
vo = 12 V dc, R L = 30 n, T e = 25 0 e
Mode VMT2 VG
1+ ..
positive positive I
T2320 series - - 3 FULL-CYCLE RMS ON-STATE CURRENT [IT(RMSI1-A
T2322 series - - 10 Fig. 4 - Maximum allowable temperaturtlllS

92CS-29I'"
T2323 series - - 25 a function of on-state current

T2327 series - - 5 for T2323.
111- negative negative
T2320 series - - 3
T2322 series - - 10
T2323 series - - 25
T2327 series - - 5 mA
1- positive negative
T2320 series - - 3
T2322 series - - 10
T2323 series - - 40
T2327 series - - 5
T2320 series - - 3 4 6 8 10 4 6 8102
SURGE CURRENT DURATION-FULL CYCLES
4 8 8103
T2322 series - - 10
T2323 series - - 40 Fig. 5 - Peak surge on-state current as a function
- - of surge-current duration.
..
T2327 series 5
VGT"·:
vo = 12 V dc, RL = 30 n, Te = 25 0 e
vo = VOROM, RL = 125 n, Te = l000e
(See Fig. 9)
...,
0.15 -
1 2.2
- V
1000 AT TC SHOWN FOR I~(RMS)
.
10
~I 4 4 W
I ~> V
!! •
t gt : Em 2 , ~":c
~J
vo = VOROM, IGT = 60 mA, tr = O.llls,
iT= 10A(peak), Te = 250 e - 1.8 2.5 IlS
~;
i~IOO ~ ~E'-~
;§ IJ
~ ~~tt.(.
l!z~
IJ ~ ~
~~
E~
a~
ROJC (Package Types 1, 11, 12, 3,32) - - 8 :~
6
4 ~ ... I--- - 41~

6
ROJA
R9JL
(Package Types
(Package Types
1,
2,
11, 12, 3, 32)
21)
-
-
-
-
80
50
°e/W
.. 0
WI
"ii , ft i'- ,
ROJA (Package Types 2, 21) - -
.. For either polarltv of maIO terminal 2 voltage {~MT2) with reference to main terminal 1.
100 10
, 4 ., , 4
TIME (t}-m,
.. I 10
, 4
OD/
• For either polaritv of gate voltage {V G} with reference to main terminal 1.

Fig. 6 - Peak surge on-state current and fusing
current as B function of time.
_________________________________________________________________ 467
TRIACS ______________________________ ~ __________________________ ~ ______________
T2~20, 12322, 12323, 12327 Ser~s

4 F'RINCIPAL DC VO\..TAGEol2V
L.OADo30A. RESISTIVE
NORMALIZED TO THE "2!5°C VALUE
x· MODE m+ ,]1[- MODES
" "
POSITIVE OR NEGATIVE INSTANTANEOUS
CURRENT (iTI-A
20
ON-STATE
Fig. 7 - On~state current as a function of on·state

-50-2'5025 50 75
CASE TEMPERATURE (TC1-OC
100
Fig. 8 - Gate-trigger current as a function of case

I CASE TEMPERATURE (TC)-·C
temperature.
92CS-2".O
Fig. 9 - Gate trigger voltage as B fU(lction of CSIe

voltage. temperature.
468
TRIACS
T2500 Series
6-A Silicon Triacs Features:
• 60-A Peak Surge Full-Cycle Current Ratings
• Shorted· Emitter, Center-Gate Design
Three-Lead Plastic Types for Power-Control and Power-Switching Applications
• Package Design Facilitates Mounting on a Printed·Circuit Board
• Low Switching Losses
Types T2500B and T2500D* are gate-controlled full-wave negative gate triggering voltages. They have an on-state cur-
silicon triacs utilizing a plastic case with three leads to rent rating of 6 amperes at aTe of sOOC and repetitive off-
facilitate mounting on printed-circuit boards. They afe state voltage ratings of 200 volts and 400 volts. respectively.
intended for the control of ae loads in such applications as TERMINAL CONNECTIONS
motor controls, heating controls, relay replacement, solenoid These triacs employ the plastic JEDEC TO-220·
drivers, static switching, and power-switching systems. AS package.
MT.
These devices are designed..to switch from an off-state to an
T_ T_
on-state for either polarity of applied voltage with positive or., -Formerly RCA 0 ..... Nos. TA8504 and TA8506. MT2
!FLANGEI
MAXIMUM RATINGS. Absolute-Maximum Va/UBs:
For Operation With Sinusoidal Supply Voltageat FreqUBncies up to 50160 Hz and with Resistive 0' Inducti'H LOlJd.
REPETITIVE PEAK OFF.STAToE VOLTAGE:-
Gate open. T J .. -65 to 100 C. . 0 VOROM 200 400 v
RMS ON-8TATE CURRENT (Conduction angle" 360 )
case temperature ITeAMS)
TC = BOoC
For other conditions
---6---
-See Fig. 2 -
A
BOTTOM VIEW
PEAK SURGE INON·REPETITIVE) ON·STATE CURRENT: JEDEC TO·220AB
For one cycle of applied principailioitage. TC" SOoC IYSM _ _ _ 60 _ __
60 Hz (sinusoidal) .. _ _ _ 50 _ __ A
50 Hz !sinusoidal) . A
For more than one cycle of applied principal \/oltage .. - See Fig. .1-
RATE OF CHANGE OF ON-STATE CURRENT:
YOM • VOAOM, IGT '" 200 rnA, tr = 0.1 IlS dildt 70 A/Il'
FUSING CURRENT (for Triac Protaction):
TC"-65to 100°C, t • 1.25 to lams•.... .2, '8
PEAK GATE·TRIGGER CURRENT:-
IGYM _ _ _ 4 _ __
For 10p.s tnax; see Fig.. 10 A
PGM _ _ _ '6 _ __
Peak (For 1 p.smax .. IGTM -:;4 A; see Fig. 6) w
AVERAGE. PGCAV)--- 0.2 _ __ w
TEMPERATURE RANGE:"
Storage. T stg _ _ -65 to 150_ 'c
Operating (Case) TC _ _ -65 to 100 _ 'c
TERMINAL TEMPERAT.URE lOuring soldering):
TT _ _ 225 _ __
For 10smax. (terminals and case) 'c
• For either polarity of main terminal 2 IIOltage IVMT2' with reference 10 main terminal t.
• For either polarity of gate voltage (VG' with reference to main terminal 1.
• For temperature measurement reference poi rot, see Dim."siona' Outline.
ELECTRICAL CHARACTERISTICS at Maximum Ratings unless otherwise specified, and at

Indicated Case Temperatura (TC)
LIMITS FULL-CYCLE RMS ONwSTATE CURRENT [I TIAMS~-A

CHARACTERISTIC SYMBOL T250IIB T2600D UNITS
MIN. TYP. MAX. MIN. TYP. MAX
Peak Off·State Current:' Fig. 1-Power dissipation vs. on·state current.
Gat. Open, VOROM = Max. rated value IOROM - 0.1 2 - 0.1 2 mA
At TJ' 1000C . . . . . . . . . . . . . . . . . . . . . . , . -. ...
Maximum On·State Voltage:'
For iT ·30A(peak) IIId TC' 25 0 C ...... , ........ 'TM - 1.7 2 - 1.7 2 V
DC Holding Current:'
Gate Open
Initial principal current· 150 mA Idel IHO mA
AITC' 25 0C ............................. - 15 30 - 15 30
For other case temperatures •••••• _•••••.••• _••.• ~SeeFig.5._
C.itical Rate of Rise of Cornmulation Voltage:"
For vD = VOROM, ITIRMS) = 6. A, Commutating d,/dt V/~s
di/dt ::0 3.2 Alms, and gate unenergizad
Aile' BO·C ..................... .. ....... 4 10 - 4 10 -
Critical Rate of Rise of Off·State Voltage:'
For vO" VOROM exponential voltage rise, and gate open
At TC' 10006 ........................... Mdt 100 300 -
75 250
: - - - . Se. Fig.9 _
- V/~s
For other case temperatures ••••..••••.•••• _..•.
DC Gate-Trigger Cuuent. t
2"'6alo12
FoIVO' 12V (de), RL =120 RMS ON-STATE CURRENT [tTIRMSU-A
TC::O 25 oC, and specifi"ed triggering mode:
1+ Mode (VMT2 positive, VG positive) .•.... .... .. ... - 10 15 - 10 15
m- Mode (VMT2 negative, VG negatival ......... ... IGT - 15 15 - 15 15 rnA Fig. 2-Allowable case temperature
VS. onwstate current.
1- Mode (VMT2 positive, VG negative). .. , ...•. .. ... - 10 60 - 20 60
m+ Mode (VMT2 negative, VG positive) •...... .. ... - 30 60 - 30 60
For other case temperatur81 ............••... ..... - See Figs. 7 and i _
_______________________________________________________________ 469
TRIACS
T2500Series
ELECTRICAL CHARACTERISTICS at MlXimum Ratingl unl.ss otherwise specified, and at SUPPLY FREQUENCY: 50160 Hz SINE WAVE
LOAD; RESISTIVE
Indica1ltd Ca. Temperature (Tc) CASE Tt;MPERATURE !TcI = 80" C
C IOO RNS OH-STATECUARENT [ITIRjSIJ=6A -t--H-t-l
LIMITS 1 I II
~ "- - GATE CONTROL MAY 8E LOST
.... OURING ANO IMt.tEOIATELY
CHARACTERISTIC SYMBOL T2IOOII T"OOD UNITS t: eo FOLLOWING SURGE CURRENT
~ INTERVAL
MIN. TYP. MAX. MIN. TYP. MAX.
OC Gate·Trigger Voltage:'!
For vo = 12V (de) and RL =12 n
I 601;,-+--+ H+--f-
AtTC' 25°C ........................... .. - 1.25 2.5 - 1.25 2.5
For other case temperatures . ••••••••••••.••••••• VGT I+--- Se.Fi,.9 _
For Vo • VOROM and RL • 1251l
At TC' 100°C ........................... .
Gate-Controlled Turn-On Time (Delav Time + Rise Time):

For yo = VDROM, 16T '" 160 rnA, rise See Fig. tt
0.2 0.1
. .. 10
. .. IDC
... 1000
92es" 20962
time = 0.1 14, and iT '" 10 A (p8lkl Igt 1.6. 1.5 1.6 1.5 ~s
Fig. 3-Peak surge on·state current
AIlC • 25°C ................. . vs. surge-current duration.
Thermal Resistance:
Junclion·ta-Case ............................. l-:iIe:=JC'--1r--+_+-:2:::-.7+_t--t-:2::.7+-;;;OC::-;I'II;:;1
Junction·ta-Ambient • .. • • .. • • .. .. .. • • .. .. • .. • .. R6JA 60 60°Ci'll
·For eTthe.' polallty of main terminal 2 voltage (VMT2) wIth ,eference to main terminal 1.
ENCLOSED AREA DEFINES PERMISSIBLE
tFor either polarity of late Yoltale (VG) with reference to main tefminal 1. TRtGGERING POINTS
'v.iWlts of then devices having dv/dt characteristics selected specifically for inductive loads are available on
Fig. 6-Gate·pulse characteristics for all

triggering modes.
POSmVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGEhTl-V CASE TEMPERATURE (Tc) _·c
teC$~I$02IRI
Fig. 5-DC holding current for either
Fig. 4-0n·state current VS. on·state
direction of on·state current
vs. case temperature.
PRINCIPAL DC VOLTAGE. 12V
LOAD = 1211, RESISTIVE
3 TRIGGERING MODES: ALL
o
.,. ·so ." 25
CASE TEMPERATURE (TCI - ·c
'2SS~HOIIIlI
CASE TEMPERATURE (Tcl-"C
Fig. 7-DC gate· trigger current (for 1+ Fig. 8-DC gate·trigger current (for l-
and"'- triggering modes) vs.
case temperature.
and ' '+
triggering modes) vs.
Fig. 9-DC gate·trigger voltage vs.
case temperature.
OFF-ST"TE VOLTAGE 1V01-VOROM
~ GATE OPEN
.
~
~ 1250
~~
0, 1000
~:: 7SO
.~
15~
.00
i
~
3
2SO
20 40 .0 .0 100
CASE TEMPERATURE, CTC) _ .. c
.us" DorRI
Fig. 10-Critical rate of rise of off'state Fig. 11- Typical turn·on time vs.
470 voltage vs. case temperature. gate· trigger current.
TRIACS
T2700, T2710 Series

Features:
6··A Silicon Triacs • Shorted-amitter construction
• Center gate construction ... provides
rapid uniform gate·current spreading for
For Power-Control and Power-Switching Applications ... contains an internally diffused falter turn·on with substantially reduced
resistor between gate and Main Terminal 1 heating effects
RCA T2700· and T2710-series devices are gate-controlled
full-wave silicon triaes. They are intended for the control of T2700B and T2700D are hermetically sealed types having an TERMINAL CONNECTIONS
ae loads in applications such as heating controls, motor on-state current rating of 6 amperes at a case temperature of
controls, light dimmers, and power switching systems. +75°C and repetitive off-state voltage ratings of 200 volts
and 400 volts, respectively.
These triaes are designed to switch from an off-state to an
on-state condition for either polarity 01 applied voltage with The T2700 series types employ the hermetic
positive or negative triggering voltages to the gate. JEDEC TO-66 package. The T2710 series
employ the hermetic TO-66 with a factory
attached heat-radiator package_
ru
JEDEC TO-66
Moximum Ratings, Absolute-Maximum Values:
For Oppratlon wifh SillllBOidal S'u.pply Voltage at Fre- RATE OF CHANGE OF ON-STATE CURRENT:
qur'ncies of .SO/flO Hz, !llld with Rc.~isti1!(' ()J' lndltctive Load IDa A/JJ.8
MTI
VDM '" VDROM, ICT '" 200 rnA, tr 0.1 p.s di/dt
I:
h.
REPETITIVE PEAK OFF-STATE
VOLTAGE', V DROM :
T2700B T2700D
T2710B T2710D
FUSING CURRENT (for triac protection, 12t:
TJ'" -65 to 1000 e, t '" 1.25 to 10 ms...... 50 e 2 e
Gate Open, PEAK GATE-TRIGGER CURRENT., I aTM : I
ForTJ "-65to +100 °c ..... . 200 400 V For 1 p- s max . . . . . . , .... , ... . A (9
RMS ON-8TATE CURRENT, It(rmsl: CATE POWER DISSIPATION:-
MT2 t GATE
For case temperature (TC) of +75 DC A PEAK. PGM i;~~~~ ~a~;e:~ .. "" 16 16 W (HEAT RADIATOR)
and a conduction angle of 360°
For ambient temperature!! (TAl up to AYEFtAGE. PC(AVl' . , .••• , •• , •.• 0.2 0.2 W JEDEC TO·66 With Heat Radiator
+ 100°C and a conduction angle of 360~ See Fig. 3. TEMPERATURE RANGE+:
PEAK SURGE (NON-REPETITIVE) storage .•••. " • . . . . . . . , .•. , •• -65to+150 °c CUAAENT WAI/EFOAM I SINUSOIDAL
LOAD: RESISTIVE
1/',: rH) "'ffi[l; ;':1
ON-STATE CURRENT, I TSM :
For one cycle of applied
Operating (casel •••. , .••..•••. , • -65 to + 100 °c CONDUCTION ANGLE· 360·
[181: Ii'!' .. ::"
principal voltage, TC '" 75°C
.~~~r~i~g:rtgo!a.:ii~Yt~~Trf~r {~nninal 2 voltage (VMT2) with
60 Hz (sinusoidal) .. . . . . . . . . . . . . . . 100 100 A
50 Hz (sinusoidal) .. , . . . . . . . . 85 85 4. -~~rnei~~;rP~lly.ity of gate voltage (VaT) with reference to
For more than one full cycle of
applied voltage. . . . . . . . . . . . . . . .. See Fig. 4. .~~~ti.n~~:f)\~~n~~ot~~ l(5~~rr'?i.e point of temperature measure~
ELECTRICAL OIARACTERISnCS
At Maximum Ratinll!l and at Indicated Case Temperature (Te) Unlea. Otherwiee Specified
(For DefinitionlJ of Terms and 5l1mboh See Pqe 6}
LIMITS
I 2 3 "
CHARACTERISTIC SYMBOL T2700B T2710B 127000 127100 UNITS FULL-CYCLE RMS ON- STATE AMPERES t,, Ilrm.il
Min. Typ_ MIK, Min. Typ. M... Min. Typ. M". Min. Typ. M".
Peak Oil-Slate Current:- Fig. I-Power dissipation vs. on-state
Gale Open
At TJ ... IOOoe iWld VDROM" Max. rated value
10ROM · 0.1 4 - 0.1 1.2 - 0.2 4 - 0_2 L2 mA
current.
!911
Maximum On·State Voltage:- CURRENT WAVEFORM: SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
For iT :: 30A (peak) iWld Te" +2S oC •• , ••• , ......... vTN - 1.8 2.25 · 1.8 2.25 - 1.8 2.25 · 1.8 2.25 V CONDUCTION ANGLE' 360"
DC Holding Current:-
Gate Open o I8cAJJ360 0
Initial principal current,. \SOmA (DC) mA

- · - ·
· ·
AtTC *t250C •••••• , •••••••• , ••• , •.••••••• IHO 15 30 15 30 15 311 15 30 ~ CONOUCTION ANGLE
For ottler case temperatures •••' •••••••••••••••••• ~Fii_6. I
.
. 91 + 9 m
Critical Rate of Rise of Commutatioo Voltage:-, ~
For Vo • VORDM. I~rms) • ~ A, commutating
di/dt· 3.2 Alms, and iate urlenergized
AI TC· t750C ., •. , •••• ,.,., ••••••••••••• .. dv/dt
3 10 . · . · 3 10 . - - - VI",. i• '0
80
Iurms) and TA specified by
curve A of Fig, J. ........• ,
IUrms) and TA specified by
. . . . . . . . , . . . , . . . .. - - . 3 10 - - . - 3 10 ·
~
, . ,
curve B of Fig. 3 .•.•.••.• .................. · . - 4 12 · - . - 4 12 - RMS ON-STATE AMPEAES [r I (r1Ol1 I]
Critical Rate of Rise of Off-Slate Voltage:*

For VO" VOROM, expollentlal voltage rise, and gate open dv/dt 311 ISO . 30 150 · !II 100 . !II 100 - VI""
At TC. tlOOOe
DC Gate-Trrgger Current·t
For VO" 12 volts (DC), RL .. 12 f)
TC" t250C, and specifledlriggeling mcde:
It Mode: positive VMT2, POSitive VGT ... .. ...... ,,"
IGT · IS 25 · IS' 25 - IS 25 - 15 25
111- Mode: negative VMT2, negative VGT . ..... ....... ,
· IS 25 - 15 25 - IS 25 · 15 25
mA
I-Mode: positive VMT2, negative VGT " ••• .. .. , ..... - 25 411 · 25 411 - 25 411 · 25 411
lilt Mode: negal;"e VMT2. poslti"e VGT ••• .. .. .. , ... - 25 40 - 25 411 . 25 411 - 25 411
For othef case temperatures,.,. " ...... .- . - .., ...
DC Gate-Trigger Voltage:·,
For VO" 12 volts (DC) and Rl " 12 U
· See Fie.8 & 9.
·
At TC" +25 0 C •••.••• '••• ,., •••••• , •. ...... - I I 12.J II 12_21-11 12_21-1 I 12.2
...... V
~ Fl;::·I. I~
For other case temperatures .•.••••.•.•.••• VGT
for VO' VORONOld Rl' 125 [l
AtTC·tlOOClC •••.•••.•••.•.•..••••••••••• 0.: 1_ 1- 10.21- 1- 10_21·
AMS ON-STATE AMPERES [IUrm.ij 9ll$-2Q49RI
Fig. 3-Maximum allowable ambient

temperature VS. on-state
_______________________________________________________________
current. 471
TRIACS
T2700, 12710 Series

ELECTRICAL otARACTERlSTlCS
At Maximum RatiOS8 and at Indicated Case Temperature (TC) Unles8 Otherwise Specified
(For Definitions o( Term. and Symbola. See P06f! 6)
LIMITS
CHARACTERImC SYMBOL T21110B 12110B 121000 127100 UNITS l·OP-od--1"-<t+++I!I-+-
Min. Typ. MD. Min. Typ. MD. Min. Typ. MD. Min. TyPo MB.
Gale-Conbolled Tum.()n Tille:
rSOOI--Hffiffil-""'d;{-,
(Delay Tillie + Rise Tille)
For YD' YORDM Old IGT' IOmA, ~
'at - 2.2 - - 2.2 - - 2.2 - - 2.2 - ", ~~or--r~~BH~+-tftR~~t-~tHffl
0.1". 'iseti.., ..d iT -IOA(peak)
AtTC~+25'C ~
2'r--r~1t+l!l-+-+++H~-+-~tHffl
Thermal Resist..ce:
Juocti ..·t.. C•• (S!eady·$IaIe)•••••••••••••••••••••
JllllCli...t..ease (TII..ie.t) ..................... .
luncti_Allbi..t. .......•........•.•........
1....------:$00 Filo n.
-1- $ooFilol·I-I-I-I$ooFilol.
.. OCJW
4
10
4.. 100
4.1
SURGE: CURRENT DURATION-FUL.L CYCLES

1000
·F"" either pol.l., of IUin ......12 vol_ (VIIIT2) wltII ~ to .lIn ... IMII.
tF• •,.... pol*lt, or .... vol.... (VOT) ,"""hence to .lIn ......... 1. Fig. 4-Peak surge on·state current
.v.11IIII of __ dmtel hlvlnllt/dl cItIr-=IIrIItics.1ectId IIIIClfk:all,,.
Indu;tlw 10Id1 •• avail... 011 11*1.'..,;'- ...tttonallnfcr...... cont8ct vs. surge..c;urrent duration.
, . . RCA RepreNntlttw or 1011' RCA Dlllribulor.
INtTIAI. ON-STATE "'LLIAMfl!RES.,50
}: ItS
roo
=
-,0 -"
""CASE TEMPEAATURE tTCI--C
POSITIVE 0111 NEGATIVE INSTANTANEOUS
ON-STATE VOLTS IVTI
Fig. 6-DC holding current for either
Fig. 5-0n·state current vs. on-state direction of on-state current Fig. 7-Gate-pulse characteristics for
voltage. vs. case temperature. all trigaering modes.
PRINCIPAL _12 PRINCIPAL DC VOLTS -12 PRINCIPAl. DC VOLTS. 12
=.~::i~~fAflD nr- ~~£~:. ~~ra~VI~ANonl·
LOAD -12A. REStSTIV£
,.'
!
M
TRIIGERING MODES: AU.
i
ii •
;
! ..
! 25
~
-,. -50 ..
-
CASE TENP£flATURe: tTCI--C " '5O
(ASE TEMPIERATUAE 1TCI-·C
••
n'l·nl.
-n -50 -,
CASE TEMPERATURE tTc l--C
.
Fig. 8-DC gate-trigger current (for ,+ Fig. 9-DC gate-trigger current (for ,- Fig. 1O-DC gate-trigger voltage vs.
and 11/- triggering modes) and 11/+ triggering modes) vs. case temperature.
vs. case temperature. case temperature.
I
1111
i 1I11
":
~
~m .0
.-h
I'
I,
~% &0
! II, /
~~
-~ I Ii'
~*
H
~ 2
y
J)1
,
Ii'
.0- 3
! lili! 10-2
, . ..
10""
, ...
TIME AFTER APPLIC.cnON OF' RECTANGULAR POWER PULSE -SECONDS
'" eo
DC GATE-TRIOGEA MILLIAMPERES IIOTI
Fig. 11- Transien t thermal resistance Fig. 12- Typical turn-on time vs.
(junction·to-case vs. time). gate-trigger current.
472 ________________________________________________________________
TRIACS
T2800, T2801, T2802 , T2850 Series

6-A and a-A Silicon Triacs Features:
• 8o-A and 1QO.A Peale Surge Full·
Three-Lead Plastic Types for Power-Control and Power-Switching Applications Cycle Current Ratings
• 01111 Passivated Junctions
• Short-Emitter Canter-Gate Desig"
• Low Switching Lo•••
These RCA triacs are gate-controlled full- The T2801 and T2802 series triacs are • Low Thermal Resistance
wave silicon switches utilizing a plastic characterized for 1+, 111- gate triggering • Package Delign Facilitates Mounting
on I Printed-Circuit Board
case with three leads to facilitate mount- modes only and should suit a wide range
Additional Features for
ing on printed-circuit boards. They are of applications that employ diac or anode T2850 Series:
intended for the control of ac loads in on/off triggering. • Internailiolation
• Package Suitable for Direct
such applications as motor controls, light All series employ the plastic JEDEC TO· Mounting on Heat Sink
dimmers, heating controls, and power- 220AB package. The T2850-series package
switching systems. has three leads that are electrically isolated TERMINAL CONNECTIONS
liT!
These devices are designed to switch from from the mounting flange. Because of IIT2
IIT2
an off-state to an on-state for either polar- this internal isolation, the triac can be (FLANGE)
ity of applied voltage with positive or mounted directly on a heat sink, without
negative gate triggering voltages. any insulating hardware; therefore heat
transfer is improved and heat-sink size can 92CS-Z111e
be reduced. JEDEC TO-22OAB

For Operation with Sinusoidal-Supply Voltage at Frequencies up to 50/60 Hz and with Resistive or Inductive /:oad.
T2800F T2800A T2800B T2800C T28000 T2800E T2800M
T2801F T2801A T2801A T2801B T2801C T2BOID T2801E
T2802F T2802A T2B02B T2802C T2802D T2802E T2802M T2802S
T2850F T2850A T2B50B T2850D T2850E
REPETITIVE PEAK OFF-STATE VOLTAGE:·
Gate open, TJ = -65 to 100°C . . . . . . . . . , .. . VOROM 50 100 200 300 400 500 600 700 V
RMS ON-STATE CURRENT IConduction angle = 360°): ITIRMS)
Case Temperature
T C = 80°C IT2800. T2802. 12850 series) 8 A
= BOoC IT2801 series only) 6 A
For other conditions See Fig. 3
PEAK SURGE INON-REPETITIVE) ON-STATE CURRENT: ITSM
For one cycle of applied principal voltage
60 Hz (sinusoidal), T C=BOoC
IT2800. T2802. T2850 series) 100 A
50 Hz (sinusoidal! T C=80 o C
IT2800. T2802. 12850 series) 85 A
60 Hz (sinusoidal), T C"'80o C (T2801 series only) 80 A
50 Hz (sinusoidal), T C"'80o C IT2801 series only) 65 A
For more than one cycle of applied principal voltage See Fig. 4, 5
RATE OF CHANGE OF ON-STATE CURRENT:
Vo • V OROM ' IGT = 200 mAo tr = 0.1 /lS d./dt 70 A//lS
FUSING CURRENT Ifor triac protection):
At T C shown for 'TIAMS):
t '" 20ms
T28oo. T2802. 12850 55 A 2,
T2801 35 A 2,
= 2.5ms
T2800. T2802. 12850 28 A 2s
T2801 18 A 2•
= 0.5 ms
T28oo. T2802. 12850 16 A 2s
T2801 ........... . 10 A 2•
PEAK GATE-TRIGGER CURRENT:·
For 1 /J.s max. See Fig. 11 . . . 4 A
GATE POWER OISSIPATION:
Peak (for 1 I1s max., I GTM .;; 4 A. See Fig. 11 16 W
AVERAGE IT28oo. T2802. T2802 series) 0.35 W
AVE RAGE IT2850 series) . . . . . _ .. 0.2 W
TEMPERATURE RANGE: •
Storage . . . . . . . . . . . . . . 65 to 150 °c
Operating (Case) 65 to 100 °c
TERMINAL TEMPERATURE lOuring soldering):
For 10 s max. (terminals and case) 225 °c
-For either polarity of main terminal 2 voltage (V MT2' with reference to main terminal 1.
~or either polarity of gate voltage IV G) with reference to main terminal 1.
~or temperature measurement reference point. see Oimensional Outline.
__________________________________________________________________ 473
TRIACS
12800, 12801, 12802, 12850 Series

ELECTRICAL CHARACTER ISTICS, At Msxlmum Rot/",. UniBrl Otherwilitl Speclflod, snd ot Indlcotfld Tom".,..",,.
LIMITS
CHARACTERISTICS SYMBOL EX~-:' ~:'S:;iod UNITS
MIN. TYP. MAX.

Peak Off·State Current:-
Gate open, TJ = 1000C, VOROM = Max. rated value ............ . IDROM 0.1 rnA
Maximum On·State Voltage:- ISee Fig. 6, 7)
For iT' 30 A (peak), TC - 25·C (T2800, T2802, T2850 series •.... VTM 1.1 V
(T2801 ,erles) .•.•••......... 2
DC Holding Current:-
Gate open, Initial principal current'" 150 rnA Idc}
vO .. 12 V, TC .. 26°C, T2800, 12860 series . . . . . . . . . . . . . . . . . . . 15 30
T2801 series ......................• 100 rnA 10
T2802 series ......................• 20 60 FU,LL- CYCLE RMS ON-STATE CURRENT[IT(RMS)]-;:CS~15018R2

For other case temperatures . . . . . . . . . • . . . . . . . . . . . . . . . . . . . See Fig. 8, 9,10
Critical Rate·Qf·Rise of Commutation Voltage:"
Fig. 1 - Power dissipation vs. on-I'tate current
For Vo "" VOROM' ITIRMS) = B A, com mutating di/dt ... 4.3 Alms. for T2800, T2802, T2850 series.
gate unenergized. TC· = BOoC (T28oo. T2802, T2.850 series) dv/d' 10 Vip,
For vo '" VOROM' IT(RMS) = 6 A. com mutating dUdt = 4.3 Alms.
=~:~:r:;O:: .
ilYE IF~~
gate unenergized, TC = 80°C (T2801 series) . . . . . . . . . . . . . . . . . 10 SlNUSOML
CONDUCTIOIO 'NOLi,
Critical Rate·of·Rise of Off·State Voltage:·
For vo '" VOROM. exponential voltage rise, gate open. TC = 1000C: }
OO'J'""
II
T2850A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , .......•... 125 350
T2800B. T2802B. T28508 ............................ . 100 300 :Alf'l!
T2800c. T2802C .......... ' .. , . . . . . . . . . . . . ' 86 276 If'p. , CONDUCTION MilL!
T2800D, T2802D, T2850D ..... , ......... , .......... . 75 250 ·el + em
dv/d. Vip,
T2800E, T2B02E . . . . . . . . . . . . . , ......... , .. , ....... . 65 225
T2800M, T2802M ..... , ............•.....•.........• 60 200
I
T28018 . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . 50 300
T2801C ... , . . . . . . . . . . . . . . . . . . , ......... , ..... , .. 40 275
T2801D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 250 ,,
.
"
T2801E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2~5
OC Gate·Trigger Current:··
10
For '10;; 12 V (dcl RL = 12[1 TC;; 25°C
FULL- cvc!.£ RMS ON-STATE CURFlE'NT~TIIfMSIj-A
Mode VMT2 VG
1+ positive positive 12800. T2850 series ...... . 10 25
T2801 series ..•......... 25 80
T2802 series ............. . 25 50 rnA
Fig. 2 - Power dissipation vs. on·state current
negative negative T28oo, 12850 series ...... . 15 25 for T2801 series.
T2801 series .......... . 25 80
T2802 series 25 50 CURftENT WAVEFORM: SINUSOIDAL
I positive negative T28oo, T2850 series only .. . 20 60 CONDUCTION ANGLE: 360·
111+ negative positive T28oo, T2850seriesonly .. . 30 60 CASE TEMPERATURE: MEASURED AS
SHOWN ON DIMENSIONAL OUTLINE
For other case temperatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Fig. 12, 13, 14
DC Gate·Trigger Voltage:··
For vo· 12 V (dc). RL ·1212, TC' 25·C
T2800, T2802, T2850 series ...............•. V
T2801series . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . .
For other case temperatures . . . . . . . . . . . . . . • . . . . . . . . . . . . . .
For '10 = VOROM. RL = 1260. TC = 100°C ............•.... 0.2
Gate·Controlled Turn·On Time:
(Delay Time + Rise Timel
For vD = VDROM, IGT = 80 rnA, tr = 0.11.1.1,
iT = 10 A (peak). TC = 25·C (T2800, T2802, T2850 ,.rie,) 1.6 2.5
p. 4 6 8 ~ 12
(12801 series) .......•........... 2,2
RMS ON-STATE CURRENT [IT!RMS~-A
Thermal Resistance:
Junction·to·Case (T2800, T2801, T2802 series) . . . . . . . . . . . . . ReJC 2.2
~~__~~~_(T_~_5_0_H_r_'._')_._._._ .._._._._._._
.._._._._._
.._._._._._ .._.__-r~ ____t-____r -____r-3~.1~ ·CIW Fig. 3 - Maximum allowable case tempera-
Junction-to-Arnbient .........................•.•••... ReJA 60 ture VS. on·state current.
• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
• For either polarity of gate voltage (VG) with reference to main terminal 1.
• Variants of these devices having dv/dt characteristics selected specifically for lnductl"elOids are Ivailable on
special order; for additional information, contact your RCA Representative or your RCA Distributor.
4 6 IS 4 "
10 100 100ll
92CS-249"
Fig. 4 - Peak surge on-state current vs. surge

curren t duration for T2800, T2802,
T2850 series.
474
TRIACS
T2800,T2801,T2802 T2850 Series

, CASE TEMPERATURE ITcl'2!5-C
. ,. ,. ., .
SLlRGE CURRENT DURATION-FULL CYCLES
1000
POSITIVE OR NEGAT~VE MTANTANEOUS ON-STATE VOLTAGEI~Tl-V
r 2 2.~
INSTANTANEOUS ON-STAn VOLTAGE hr)-Y
92C$-1502111:1 (POSITIVE OR NEGATIVE) 92CS-24842
Fig. 5 - Peak surge on-state curren t vs. surge Fig. 6 - On-state current VS. on-state voltage Fig. 7 - On-state current VB. on-state voltage
current duration for T2801 series. for T2800, T2802, T2850 series. for T2801 series.
INTIAL. ON -STATE CURRENT tI T I'150mA
CASE TEMPERATURE ITcl_oC CASE TEMPERATURE ITCI _·C CASE T£MP(ftATURE ITC)-OC 92SS-3906R2
Fig. 8 - DC holding current VS. case tempera· Fig. 9 - DC holding current vs. case tempera· Fig. 10 - DC holding current vs. case tempera·
ture for T2801 series. ture for T2850 series.
ture for T2800, T2802.
PRINCIPAL DC VOLTAGE-ltv
LOAD· 12 .n. RESISTIVE
CASE TEMPERATURE ITcl-·C CASE TEMPERATURE (Tcl-"C
Fig. 11 - Gate pulse characteristics for al/ Fig. 12 - DC gate·trigger current (for 1+ and Fig. 13 - DC gate·trigger current (for 1- and
triggering modes for all series. 111- triggering modes) VS. case tem· 111+ triggering modes) vs. case tem·
perature for T2800, T2802, T2850 perature for T2800, T2802, T2850
series. series.
PRINCIPAL DC VOL.TAGE_12V
PRINCIPAL DC VOLTAGE _12V
LOAD. 12 n.. RESISTIVE PRINCIPAL DC VOLTAGE -IIV LOAD '12A, RESISTIVE
LOAD. 12.n. RESISTIVE TRIGGERING MODES: 1+ ,111-
3 TRIGGERING MODES: ALL
CASE TEMPERATURE ITC1_oC ." .,. ."

CASE TEMPERATURE (Tel _·c
2.
\tZS.-!INI"1
." ., . ."
CASE TEMPERATURE ITcl _·C
Fig. 14 - DC gate· trigger current (for 1+ and Fig. 15 - DC gate·trigger voltage vs. case
111- triggering modes) vs. case temp· Fig. 16 - DC gate·trigger voltage vs. case
temperature for T2800, T2802, temperature for T2801 series.
pereture for T2801 series. T2850 series.
________________________________________________________________ 475
TRIACS ___________________________________________________________________
T2800, T2801, T2802,T2850 Series
100
Fig. 17 - Turn-on time VI. gate·trif/flllr current Fig. 18 - Typical critical rate-of-rise of off-
for T2800, T28o:t; T28S0 series. state voltage vs. case tamperature
for all series.
476
_____________________________________________________________________________ TRIACS
T2851 Series
8-A lsolated-Tab Silicon Triacs Features:
• Internal isolation
Three-Lead Plastic Types for Power-Control • 100·A peak surge full-cycle current
and Power-Switching Applications ratings
• Shorted·emitter. center-gate design
The RCA-T2851 series triacs are gate-con- These triacs are characterized for 1+. 111- • Low switching losses
trolled full-wave silicon switches utilizing a gate-triggering modes only and should suit a • Low thermal resistance
plastic case with three leads to 'facilitate wide range of applications that employ diac • Package suitable for direct
mounting on printed-circuit boards_ They or anode on/off triggering. mounting on heat sink
are intended for the control of ac loads in • Glass·passivated junctions
such applications as motor controls. light The T2851 series types employ an ISOWATT
dimmers. heating controls. and power- package. a plastic case with three leads that
switching systems. are electrically isolated from the mounting TERMINAL CONNECTIONS
These devices are designed to switch from flange. Because of this internal isolation. the
an off-state to an on-state for either polarity triac can be mounted directly on a heat sink.
of applied voltage with positive or negative without any insulating hardware; therefore
gate-triggering voltages. They have an on- heat transfer is improved and heat-sink size
IFL.'i... ,
state current rating of 8 amperes at a TC of can be reduced.
750 C and repetitive' off-state voltage ratings
of 200. 300. 400. and 500 volts.
92(5-27519
MAXIMUM RATINGS, Absolute-Maximum Values;
For ap.r.rion wirh SinUMJidsl Supply VoltIIl/fl at FrtlllUtlncitU up to 50/60 Hz and with Relilti"" or
Inducti"" I.D«I. T28&1 B T2861 C T28&1 D T2861 E JEDEC TO·220AB
VDA'OM- TJ ~ -66 to l000C ............... . 200 ___ 300
_ 8 400 500 V
ITIRMSI TC • 750 C, 8 s 360" ............. . A
_ _ _ See Fig. 3 _ _ _ _ __
For other conditions ......•........
ITSM
For one cycle of applied principal voltage _ _ _ _ 100
60 Hz (sin ..... ieleH. TC • 750 C ••••...••. A
85 _ _ _ __
50 Hz IsinusoieleH. TC = 750 C •••••.•••. A
For more then one cycle of applied principal voltage See Fig.4 - - - - - -
di/dt _ _ _ _ _ 70 ___________
vD· "'DROM.IGT = 200 mAo tr = 0.1 "s..... . AI"s
2
1 t [At TC shown for ITIRMSI' helf.. ino wavo) :
See Fig. 5
t=20ms ...........•.................. _______ 55 28
-2.5ms ............................. . _______ 16
·0.5ms ............................. .
IGTM•
For 1 Il. max .• See Fig. 6 ................ . 4
PGM IFor 1 ". max .• IGTM' .;;; 4 AI. See Fig. 6 .. . 16
PGIAVI .............•.................... 0.2
Tstg ........•......•.•..•....•.....•...• _ _ _ -66to 150 _ _ _ ___
_ _ _ -66 to 100 _ _ _ ___ Fig. 1 - PrinCipal voltage-current characteristic.
TC .................................... .
TT lOuring soldering for 10smax.1 .......... . 225 _ _ _ _ ___
-For either polarity of main terminal 2 voltage (V MT2 J with reference to main terminal 1.
• For either polarity of gate voltage IV G) with reference to main terminal 1 .
SUPPLY FREQUENCY: 50/60 Hl SINE WAVE

LOAO:RESISTIVE
CASE TEMPERATURE ITCI-75·C
J±llilli
rr
100 RMS ON·STATE CURRENT [lTIRMSI],·T8 A _-r-MffiHil
1 ~ I ~ ~~~ ~~NTROL MAY BE LOST
a
~80
.1 I ~~LNO;'=O S~:~I~~~~~NT
INTERVAL.
60-~.
NOT 8E RE-
CONDUCTION ANGLE
• 9, + 9m
E JUNCTION
HAS RETURNED
. . .~.~2T
TATE
li60
a VALUE.
• II
10 100 1000
SURGE CURRENT DURATION-FULL CYCLES IU!CS-.'"
Fig. 3 - Allowable case temperature as a Fig. 4 - Peak surge on-state current as a

Fig. 2 - Power di..ipation a. a function function of on·state current. function of surge current duration.
of on.".re current.
__~------------------------------------------------------------------477
TRIACS __________________________________ ~ _________________________________________
T2851 Series
At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperatures
LIMITS
For All Types
Except as Specified
Min. Typ. Max.
IOROM
-
TJ = 100oe, VOROM = Max. rated value - 0.1 2 mA
vTM
-
iT = 30 A (peak), Te = 25 0 e, See Fig. 7 - 1.7 2 V
IHO
-
vO=12V,Te=250e
For other case temperatures
- 100
See Fig. 8
- mA
dv/dt (eommutating)-
Vo = VOROM, IT(RMS) = 6 A, di/dt = 4.3 Alms,
gate unenergized, T e = 750 e, See Fig. 12 2 10 - Vips
dv/dt (Off·State)-
Vo = VOROM, exponential voltage rise, gate open,
Te= 1000e
T28518 50 300 -
T2851 e 40 275 -
V Ips
T2851 0 30 250 -
T2851 E 20 225 -
IGT
RL=12n
-
Vo = 12 V de
Mode
1+
VMT2
+
VG
+ - 25 80
mA
..
Te = 25 0 e 111- - - - 25 80
For other case temperatures See Fig. 10
0~21 1~51
VGT
Vo = 12 V dc, R L = 12 n, T e = 25 0 e 3
Vo = VOROM' RL = 125 n, Te = 1000 e - V
tgt
Vo = VOROM, IGT = 80 mA, tr = 0.1 ps, iT = 10 A (peak),
T C = 250 e, See Fig. 13 - 2.2 - ps
ReJC - - 3.1 °elW
ROJA - - 60 °e/w
-For either polarity of main terminal 2 voltage (V MT2) with reference to main terminal 1.
• For either polarity of gate voltage (V G ) with reference to main terminal 1.
.1--- _L
.1----
I l-l-~b- ,,
. , CASE TEMPERATURE (TC)'25-C
;;;
~.
"I
1;;-
'r---
~~1
S\~E..
.
"
::;!
~H
2f------ '----
~RS~(' 2 ~~
S/",~ W. ~I
~~
~~IOO
~a
~w
~~
.
,I---
......... ULI..
"111E')~
~o~~
'
."
~2
~~
":oJ
,I---- -
~~
-,~.
~~
~Ii'
tt~ ~o.
,I---- ,
10
, , , . , , .. , , 1 1'0.01 l 4 6 110,1 4 6 ',,0
--.
POSITive OR NEGATIVE DC GATE-TRIGGER CURRENT 11 6T)-A
10 92SS·]71~R5
TlMEftl-Ift' POSITIVE OR NEGATIVE INSTANTANEOUS ON-STAT[ VOLTAGEhtl-V
Fig. 6 - Gate-pulse characteristics for all
Fig. 5 - Peak surge on-state current and fusing
triggering modes, Fig. 7 - On state current as a function of
current as a function of time.
on-state voltage.
478 _________________________________________________________________________
TRIACS
T2851 Series
OFF-STATE VOI.TAGE CVDI-YDROM
GATE OPEN
1250
1000
If I
100
il, 1'r.o'C",1.
I
I .00
250
-40 -20 0 20
CASE TEMPERATURE (Tel _·c
.0 60-
•0 .., .. 10 100
CASE TEMPERATURE ITel _·C
lileS_241M"
Fig. 8 - DC holding current as B function Fig. 9 - Typical critical rate--of·ris8 of off- Fig. 10 - DC gate-triwer current (for 1+
state voltage as a function of case and ",- triweringmodes Jasa
of case temperature.
temperature for T28518. function of case temperature.
-~o -25 0 25
CASE TEMPERATURE CTC I-·c 92CS-30347
Fig. 11 - DC gate-trigger voltage as a

function of case temperature.
____________________________________ ~ ___________________ 479

TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series

(Includes 2N5567-2N5574)
Features:
10-A and 15-A Silicon Triacs • dildt Capability =160 AI~.
• Shorted-Emitter, Center~Oat. O"'gn
For General Purpose AC Power Switching • Low Switching Lo....
• Low On-State Voltage at High
These RCA triacs are gate-controlled, full- These triacs are intended for control of Current Levels
• Low Thermal Rlliltance
wave silicon ac switches_ They are designed ac loads in applications such as heating
to switch from an off-state to an on- controls, motor controls, arc-welding
state for either polarity of applied voltage equipment, light dimmers, and power TERMINAL CONNECTIONS
with positive or negative gate triggering switch ing systems.

voltages.
MTI
MAXIMUM RATINGS, Abroluro-MBXimum Values:

For Operation with Sinusoidal Supply Volt. at Frequencitu up to T4100F 2N5567 2N5568 T4100E T4100M
50/60 Hz and with Resistive or Inductive Load. T4101F 2N5569 2N5670 T4101E T4101M
T4110F 2N5571 2N5572 T4110E T4110M 2N6667 T4100F T4101E
T4111F 2N5573 2N5574 T4111E T4111M
T4120F T4120B T4120D T4120E T4120M 2N5568 T4100E T4101F
-REPETITIVE PEAK OFF-STATE VOL TAGE:-
T4121F T4121B T4121D T4121E T4121M 2N5571 T4100M T4101M
Gate open, TJ = -65 to 1000 e ..... , ...... . 50 200 400 500 600 v 2N5572
VOROM
·RMS ON·STATE CURRENT (Conduction angle'" 36Q0J:
Case temperature . , ....... . I TIRMS )
Press-Fit Types
T C = 8SoC 12N5567. 68, 69, 70, T41Q1M,
T4111M, T4121B. 0, Ml ........... . 10--- A
= sooC 12N5571, 72, 73, 74, T410OM, T4110M
Press-fit & stud types) ..........••• 15--- A
= 7SoC (T4170B, D. M - Isolated-stud types) 15--- A
For other conditions ............. . -- See Fig. 3.4 -
PEAK SURGE (NON·REPETITIVE) ON-STATE CURRENT: ITSM
For one cycle of applied principal voltage, Teas above
60 Hz (sinusoidal) ............ . ---100--- A
50 Hz (sinusoidal) - - - 85--- A
For more Ihan one cycle of applied principal voltage -- SeeFig.5,6-
RATE-OF-CHANGE OF ON-STATE; CURRENT:
V OM = VOROM ' IGT = 160 rnA, Ir = O.llJs di/dt ---150--- AlIAs
FUSING CURRENT (for Triac Protection):
At T C shown for ITiRMS) .. 12 t.
t= 20ms 55--- A 2•
= 2.5ms 28--- A 2•
= 0.5 ms 16--- A 2,
PEAK GATE-TRIGGER CURRENT:-
For 1 /J$ max .• See Fig. 11 IGTM 4--- A
-GATE POWER DISSIPATION:
PEAK (For 1 jJ5 max .• IGTM <4 A, See Fig. 11 PGM 16--- W
-TE~pEE~~~~RE RANGE>" . PGfAVI - - - 0.5--- W

2N5569 T4110E
Storage TS19 -- -65to15o. - DC
2N5570 T4110M
Operating ICase) ....... . ...... .
-TERMINAL TEMPERATURE lOuring SOldering}:
Tc -- -65 to 100- "c 2N5573 T4111F
For 10 $ max. (terminals and case) TT ---225--- DC 2N5574 T4111E
STUO TORQUE: T, T4110F T4111M
Recommended . . . . . . . . . - - - 35--- in-Ib
Maximum (00 NOT EXCEED) - - - 50--- in·lb Stud Type.
- In accordance with JEDEC registration data format fJ!5·14, RDF 21 filed for the JEQEC (2N-8ariesl types.
• For either polarity of maIO terminal 2 voltage IV MT2 ' with reference to main terminal 1.
: For either polarity of gate voltage IVG}with reference to main terminal 1.
For temperature measurement reference pomt, sea Dimensional Outline.
,
LOAD:
CURRENT WAVEFORM:.1:l~~~\~~~
RESISTIVE OR
CONOUCTION ANGLE
I P~M I MT2
'N":U-
-,
92(5-27755
T4120B T4121B
T4120D T4121D
T4120E T4121E
T4120F T4121 F
, FULL-CYCLE RMS ON-STATE CORR£HT [I.TIAMSa-A
T4120M T4121M
FUI..L-CYClE RMS ON-STATE CURRENT ~TfRMS~~~2 92LS-21J9R3
Isolated-Stud Types
Fig. 1 - Power dissipation vs. on-state current Fig. 2 - Power dissipation vs. on-state current
for all 10-A triacs. for all 15-A triacs.
480 _______________________________________________________________
________- -______________________________________________________________________________ TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series

_/mum R.Unlund ",ndIcotMJ C... T""".,.rulOITcJ Iln"" O_'ndicotMJ I;,·..'~•••01""
~,o:.~.
ELECTRICAL CHARACTERISTICS. At
LOAD: RESISTIVE OR INOUCTIVE
CURRENT WAVEfORM: SINUSOIDAL
CONDUCTION ANGLE' no'
LIMITS CAS' TEMPERATUIIIE: MEASURED AS
CHARACTERISTICS SYMBOL UNITS SHOWN OJ! DIMENSIONAL COTUMn
MIN. TVP. MAX.
CO~DUC1"lOIi I.IIGl(
Peak Off-State Current:'
0.1 2· rnA "I+'m
Gate open, TJ- tOOOC. VOROM" MIx. rated value IDROM
Maximum On-5t11tt Voltage:'
For iT· 14 A (peak), TC" 26°C
12N5667, 68. 89, 10. T4101M. T4111M, T4121 series) 1.35 1,66-
mA
.. 21 A (peak), TC .. 26°C
(2N6571. 72. 73.14, T4100M. T4110M. 141201lrles)
DC Hotding Current:'
Gate open, Initfal princiP'!1 curr.nt .. 600 mA IDC), "0" 12 V:
2N6567, 68.69. 70, T4101M, T4111M. 14121 series: 2.' 5 75 10
~TC =25°C ..•...........•..•.•...•.••..
IHO
16 30 FULL CYCLE RMS ON-STATE CURRENT [lTlRMSJ-A
TC·-es·C ............... . 75 200· v
2N6571, 72, 73, 74, T4100M. T4110M, T4120Hries:
TC"'26°C ............................ .
Fig. 3 - Maximum allowable case temperature
20 76
TC =_66°C .......................... . 75 300· VS. on-state current for all IO-A triacs.
For other case temperature .•..•.•..•.•...•.••.. See Fig. 9 & 10
Critical Aate·of·Alte of Commutation Voltage:' CURRENT WAVEFORM' SINUSOIDAL
LOAD, RESISTIVE OR IN~UCTIVE
For vo" VDROM' IT(AMS)· 10 A. commutating CONOUCTION ANGLE' 360'
diJdt .. 6.4 Alms. gate unenergi.ud. Tc" poe CASE TEMPERATURE: MEASURED AS
2· SHOWN ON DIMENSIONAL OUTLINES
2N6581,68. 88, 70. T4101M, T4111M. T4121 series •..
For Vo .. VDAOM. IT(RMS) .. 16 A. commuteting dv/dt V/lls COlioucr'ON ~NGlE
dl%dt '" B Alms, pte unenergized, TC • SOOC "r+'m

12N6671. 72. 73. 74. T4100M. T411OM-
Press-fit '!Stud typesl .•.•....•.•... 2· 10
'" 1SoC (T4120B, 0, M - lsollted-studl ... 2 . 10
Critical Rate-of·Aise of Oft·Stttt Voltage:'
For Vo '" VOROM. exponentl.1 voltage rise, gate open, !~80
TC - l00"C: it- ISOLATEO~STUO TYPES
2N5667. 2N5569. T4121. 2N6671. 2N6673. TC1208 ..... 30· 150 70
2N6668. 2N5670. T41210. 2N5572. 2N6674. T412OO. . . . d,ldt 20· 100 Vllls
T4101M. T41"M. TC121M. T4100M. TC11OM. T412OM.:. 10 15 80
DC Gate-Triggat' Current:"
OSlO IS
FULL CYCLE RMS ON~STATE CURRENT ~TlRMsll-A
For "D -12 V (DCI. RL· 30a, TC" 26°C 92SS~3822RI
Mode VMT2 VG
1+ positive po$itive Fig. 4 - Maximum allowable case temperature
Alll().Atri.cs •••.. , ••.•...•..•.• 10 26 VS_ on-state current for all 15-A triacs.
Alll5-Atriacs •.•.••............• 20 50
111- negatlw neoetive
Alll().Atriacs ...•••.....•..•••.• 10 25
All 16·Atriecs ...•.•....•••...•.. 20 50
,- positive negative
Al11().Atriacs ..••...••.......•.• 20 40
AlIl5-A trlacs •.•.••...•....•.••. 35 80
AlllO-Atriacs •...•..•......•.••• 20 40
AlI15-Atriacs ••.•••.•.••...•.•.. 35 80
For Vo '" 12 V (DCI, RL =3On, TC· -66°C rnA
Mode VMT2 VG
,+ positive positive
AlI1o-Atrl.cs ••.•.•.•.••.•••••.•
AlI16·Atriacs .•••.•...•.••.•••..
111- negative negative
All lO-A triacs •.•••....••.•.•.•.•
AlI15-Atriacs ..•....•......•.••. " 6 '10 " 6 8 102 " 6 8'03
,- positive negatift SURGE'CURRENT DURATION -FULL CYCLES
AlllQ.Atrla ..••.• , •.••.•.•.•.. 80 1SO-
All Hi·A triacs ••...• , ••••...•.•.. 100 .200'" Fig. 5 - Peak surge on-state current vs. surge
AI11O-Atriacs •.•..•.••..••.•..•. 80 160'" current duration for a/l lo-A triacs.
AII16-Atri.cs •.•..•........•.••. 100 200-
For other case temperatuntl See Fig. 12, 13, 14. &. 16
DC Gate-Trigger Voltage:"
~ ::E~~::~.[JTtRMSI]·'U ~
J .!I a
F", ' 0 ' 12 VIDeI. AL • lOG
TC·26"C ............................... . 2.6 GATE CONTROL MAY SE LOST
TC __ ROC •••.•••••••••.•••••••••••.•.••. v ~ ~:I:: ~~~R::.~E?~:~~'vi[OLLOWING
2 4-
For other CII8 temparetul'tl ••••••.•••.•••••••••. Sea Fig. 16 & 17
~ i IOOI-I'-""t--++HUNT~~~~g~lgNN~~M~~~:iu::p~:~EO
~~,,~~t :~J~~N~~LJ'tHIN S~'::A~
FO"D • V DAOM. AL • 126G. TC - l00"C 0.2
Gate-Controlted Turn.()n Time:
(Dttay Time + Ri.. Timi.
F", '0 - VOAOM. lOT - leo rnA. ... - 0.1/11.
iieo~~H~
IT- 16 A lpolkl All 1o.A Irl.... IT' 26 A 1..... 1 tot os ~u40·1--+--~+t-+--+-t-t+~~1-~~~
All 16-A Ir.... TC - 26"C
Thermal Resiltlnce:
I.B 2.5
!
Junction-to-Cut:
'J.C
~ 20r-+--++++__+ __++~__+-.-t-++1
.. .. ..
_ • .state" .. .. . ..... .. .. . . .. . . . • .. • . .. .. 1·
~T~~~~=m~·=·=·7·~··~·~·~·~
..~·-·-
..=·~·~·~~·~·~··~·~·~·~~·~·~~--------+-----TS~"~F~~~.2=0r_--__4 oeM
" 6 "0 " 6 '.02
4 6 '103
Junctlon-to-lsolattd Hex IStud.... Dim. Outline):

Stoody.state ................................ . 1.1
• 'n accordenct with JEDEC registration date format: (JS.14. RDF 21 filed for the JEDEC (2N-series) typal. Fig. 6 - Peak surge on·state current vs. surge
• For either pol_ltv of main termin.12 vottlgl (VMT2) with rtftrence 10 mlin termine' 1. current duration for all 15·A triacs.
• For ti1htr' polarity .of pte vol. eVG) with nrM1C11 to main terminal 1.
_________________________________________________________________ 481
TRIACS
T4100, T4101, T4110, T4111, T4120, T4121 Series

I
INST.. NT....EOUS ON~ST.T£ VOL'AGE (v,I-Y CASE TEMPERATURE C'c'-·C
I POSITIVE Olt NEGATIVE I HL.-1141111a tISS-1I2"
Fig. 7 - On-state current vs. on-state voltage Fig. 8 - On-state current vs. on-state voltage Fig. 9 - DC holding current VS. case tempera'
for all 1D-A triacs. for all 15-A triacs. ture for all 1D-A triacs.
INITIAL ON-STATE CURRENT'500mA S,,2.

It
,. -'0 -.,
CAS! TEMPERATURE 1'c:I-oC
••
DC
... 0.1
GA~~~~:~R~U:=IY~GTI-A ,ltS-17011
• ;. TEM•••, ••• 1-'.
Fig. 10 - DC holding current vs. case tempera- Fig. 11 - Gate trigger characteristics and limit- Fig. 12 - DC gate.tr1'!r current vs. case temp
ture for all 15·A triacs. ing conditions for determination of perature (T & 111- modes) for all
permissible gate trigger pulses for all 1D-A triacs.
triacs.
i ,.
«
~ 15 !il15O
~ ~
so ~
.
w .0 W 100
g ~
g 25 lS ••
o
-" ~50 -25
CASE TEMPERATURE tTcl-"C
. -" -50 -2$ 0
CASE TEMPERATURE ti(:I--C
2. ·75 -so -25 0
CASE TEMPERATURE I'(I-"C
..
Fig. 13 - DC gate-trigger current VS. casa tem- Fig. 14 - DC gate· trigger current vs. case tem- Fig. 75 - DC gate-trigger current v•. case tem-
perature (1- & /1/+ modes) for all perature (1+ & IIr modes) for all perature (1- & II/+modes) for all
1D-A triacs. 15-A triacs. 15-A triacs.
PRINCIPAL DC VOLTAGE'IIY PRINCIPAL DC VOL.TAGE' 12 V
LOAD' 12A, A!SISTIY!
4 TRIGGERING MODES: ALL ~~gG'~~~'G R~~t~~E 1· AND III- ,+-
~
~
Al
-eo ...
CASE TEMPERATURE tTcl-"C
•• '7, -150 -25
CASE TEMPE!'tATUR[ (1c'-"C
0 ..
Fig. 16 - DC gate-trigger voltaga vs. case tem- Fig. 17 - DC gate-trigger voltage vs. casa tem-
perature for all ID-A triacs. perature for all 15-A triacs.
482 ________________________________________________________________
TRIACS
T4100, T4101, T4110, T4120, T4121 Series
I
~;
fl
t
~~
WARNING:
The RCA isolated-stud package thyristors should be han-
dled with care~ The ceramic portion of these thyristors con-
a~ tains BERYLLIUM OXIDE as a major ingredient. Do not
CRIIh, grind, or abrade these portion. of the thyristors be-
~I "" CllU18 the dust resulting from such action may be hazardous
if inheled •
. . . ...
Fig. 18 - Turn-on time vs. gate trigger current Fig. 19 - Transient ;unction·to·case thermal
for all types. resistance VI. time for aI/ triaes.
_______________________________________________________________ ~3
TRIACS
T4103-T410S, T4113-T411S Series

400-Hz, 6, 10, & 1S-A Silicon Tri,acs Features:
• di/dt capability = 150 A/lJ.s
For Control-Systems Application in Airborne and GroundcSupport Type Equipment • Shorted·emitter· center-gate design
• Commutltlng d¥/dt.ca~abili.ty
These RCA triacs are gate·c;ontrolled full·wave silicon ac V RMS sine wave and repetitive peak off-state voltages of
switches. characterized at· 400 Hz
200 V and 400 V,
The devices are designed to switch from an off-staui to an These triaes exhibit commutating voltage Idv/dt) capability
on-state for either polarity of applied voltage with positive or at high com mutating current (di/dt). They can also be used TERM)NAL CONNECTIONS
negative gate triggering yoltaga~ in 6O-Hz applications where high commutating capability is
They are intended for operation up .to 400 Hz with resistive required.
or inductive loads and nominal line voltages of 115 and 208
MAXIMUM RATINGS. Absolute·M8Jt;mum ValuB':

For (Jperartion with SinUloidsi Suppl'l VoItB,. 8t T4103B T41138 T4103D T4113D T4,03E T4113E T4103M T4113M
Frequenci.s up to 400 Hz and with Res/It;.,. or T411M8 T41148 T41040 T4114D T4'04E T4114E T4104M T4114M
InductiWl Load T4106B T41158 T4106D T4116D T4'05E T4116E T4'06M T4115M
REPETITIVE PEAK OFHTATE VOLT"';E,' VUkOM 200 600
400 500
Gale open. 'I:' = 50 10 JOOo(, .
RMS ON.sTATE CURRENT (Condlldion lnale = 360°): I-fiRMS}
U...: temperature T4103 Series
=
T(' 90"" (T410SB. T41OSD. T411SB. T411SD) , '
• MS"(, (T41048, T4104D. T4114B. T4114D) ,
•
III
T4104 Series
T4105 Series
• MOO" (T41038, T4103D. T4113B. T41l3D) , ' ' ' IS A
For olhc:r l"Ondiliuns . . . . . . . . . . . . . . . . . _. Set' ""'.tr 2 Press-fit
PEAK SURGE fNON-REI'ET1T1VE) ON-8TATE CURRENT ITSM
For une l'ydc of applied prmcipal \'ultage
!IMl A
4un Hl hinusoidall ".
60 I~z hinu!iOjdaU . . . . . . . . . . . . . . . . . . . '. . . JlKI A
~() III (sinusoidal) •••••.••. _~_: •.•••.••••.••••. x~ A
For more than one cyde of applied principal vollage See Fig, 3
RATE.()F:CUANGE OF ON-liTATE CURRENT, di/dt
VON " VDROM. ICiT '" 160 rnA. If '" 0.1 Il" 15H A!J.j\
FUSING CU\UU!NT fro. _ ......don),
TJ • -50 to l000c. t =1.25 to 10 ms •••••••••••• 30 A 2s
PEAK GATE-TRIGGER CURRENT,·
Fot I IB rmlIx'.. . ••••••••.• A
G":A~~ IO:-!:~~~M $.4 A, See F~g. 6) ... PGM I. W

AVERAGE " " " " " " " PGIAV) U! W
TEMPERATURE RANGE,
0('
Siorate . . . . • . . . . • . . . . . . ....... . -:'10 10 150
0,,
OpeoraliDl ((ase) • • . . • . . . • • • , ·,SO 10 Ion
TERMINAL TEMPERATURE (DurilW .:tid_OW): T4113 Series
ns 0(' T4114 Series
_~'!!.!.Q.! '.."~~;.!Ierminak and cue).
T4115 Series
STUD TORQUE: T,
Recommended ....... , ..... , . ; ............ . 35 in-Ib Stud
Maximum (DO NOT EXCEED), , .. , .... , , .. ' , , , 50 in-Ib
• For either polarily of main terminal 2 volla~e IVMT!I wuh refe,en~·e to main lermlnal I.
• For either polarity of gale voll. (Vcrl wllh refereoce 10 main terminal I. SUPPLY FREQUENCY' 50/60/400 Hz
• "or temperature measurement reference pOlIlI. 'it't: Dimen§ional Outline.
L.OAD: RESISTIVE·
RMS ON· STATE CURRENT [ITIRMSI} II .lJIIJ
CIJftRENT WAVEfORM: SINUSOIDAL
200 RATED VAL.UE AT SPECIFIED TEMP II J II
LOAD, RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE. 360·
CASE TEMPERATURE: MEASURED AS
SHOWN ON DIMENSIONAL OUTLINES
2 41a
10 100 1000
SURGE CURRENT DURATION-FULL CYCLES UCI-ITO!5IRI
Fig_ 3-Peak surge on-state current vs_

Fig_ 2-Maximum allowable case tempera- surge-current duration_
Fig_ 1-Power dissipation vs_ un-srate current_ ture vs. on-state currep'" TRIGGERING MODES: ALL
EfoICLOSEO AREA INDICATES
100 LOCUS OF POSSlaL£ TRIGGERING
,. : POINTS
1 4
!~ a
~~
g: I0C:$~~~~~~
:~
i~ 4
!~ pot-tt"'''T-t-t-tf--'l~--t::;l;:lijoot'9t--ti
5~~b
':F3!~~tfl~J;a~
DC GAn: TRIGGER CURRENT IIGTI-A
I POSITIVE OR NEGATIVE
Fig_ 6-Gate-trigger characteristics and
Fig_ 4-0n-stata current vs.. on-stata voltage_ Fig_ 5-0C holding current vs_ case temperature_
of permissible gete-trigger pulses_
~4 .............................................................................................................._________________
________________________________________________________________________________________ TRIACS
T4103-T4105, T4113-T4115 Series

At Maximum Ratings and at Indicated Case Temperature (T C) Unless Otherwise Specified
LIMITS
CHARACTERISTIC SYMBOL ALL TYPES UNITS
Min. Typ. Max.
Peak Off-State Current:'
Gate open, T J =: 10QOC. VOROM '" Male. rated value. 'DROM 0.1 mA
Maximum On·State Voltage:6
1.- For iT ", 21 A (peak), TC .< 2S a C. VTM 1.4 1.8 V
j DC Holding Current:6
Gate open, Initial principal current., 500 rnA lOCI. yo
TC"250 C.
= 12 V.
'HO 20 75 mA
..
For other case temperatures See Fig.5
-so -25 0 25
Critical Rate-of-Rise of Commutation Voltage:' CASE TEMPERATURE ITCI_oc
For vO - VOROM. 'TIRMS) " rated value. gate unenergized

Commutating di/dt " 21.4 Alms, TC " 900 C
T41058. T4105D. T41158. T4115D 10 Fig. 7-DC gate-trigger current vs. case
Com mutating di/dt 36 Alms. T C .:: 85 0 C dv/dt V/IJS temperature. (1+ and 111- modes).
T41048. T4104D. T41148. T4114D 10
Cam mutating di/dt ., 53.3 Aims, ;r C " 800 C
T41038. T4103D. T41138. T4113D 10
Critical Rate-of-Rise of Off·State Voltage:'
For \/0 " VOROM. eKponential \/oltage rise,
gate open. TC - 1000 C. d\/Idt 30 150 V/IJS
DC Gate- Trigger Current:'t Mode VMT2 VG
For \/0 12 V lOCI. 1+ positive positi\/e 20 50
RL 30 nand III' negative negati\/e IGT 20 50 mA
TC 25 a C I' positive negative 35 80
111+ negative positi\/e 35 80
For other case temperatures. See Flqs. 7& 8
J. F;~ l
DC Gate·Trigger Voltage:'t
PRINCIPAL DC \IOL.TAGE-I! v
For \/0 " 12 V!DCl. RL = 30n TC " 2SoC. 2.5 V LOAD" SOD RESISTIYE
For other case temperatures. ' TRIGGERING MODIS: I-AND 111+
1
For \/0 " VOROM. AL = 12SSl, TC " l00a e
~
0.2
Gate·Controlied Turn-On Time:

I.
.'.
Far \/0 = VDROM.IGT = 16OmA. tr ::0.1 IJS. tg.
iT = 25A (peak). TC '" 25°C •••••••••••••••••.••• 1.6 2.5 IJS
Thermal Resistance ~
Steady-State (Junction·to-Casel 8J·C °CIW '
Transient (Junctiofl'to,Case) .. .~ F' 11 5
Steady·State (Junction· to-Ambient) , . 8J ·A 33 8
°CIW
• For either polarity of main terminal 2 voltage IVMT2)

with reference to main terminal t,
t For elther pOlarity of gate voltage (VGl with reference
to main terminal t,
-11:0 -2S 0
CASE TEMPIRATURE "cl--C ••
'ZC"170eo
Fig. 8-DC gatl!-trigger current vs. case

temperature. (J- and II 1+ modes).
PRINCIPAL DC VOLTAGE-I!\/
LOAD "JOG. AESISTIYE m
TRIGGERING MODES: ALL
~ j.--FfrT
I: .
=1
Ti ! "
II
i
:i>
•
h '" / II;
~, II'
~~
H I
~ ,
-so -2S 0
CASE TEMPERATURE "Cl--C
DC GATE-TRIGGER CUARENl: trGTI-IIIA t2CS'170et TIME
0-'
AFT~
... ... , ...
IC)-2 10"
APPUCAfION CF' RECTMGUI..AR POWER PlI..S£ -SECONDS
Fig. 9-DC gate-trigger voltege vs. case Fig. 11- Transient thermal resistance vs.
temperature. Fig. 10- Turn-on time vs. gate-trigger current. time (junction-to-case).
_____________________________________________________________ ~5
TRIACS ______________________________________________________________________________ ____
~
T4130, T4131, T4140, T4141, 14150, T4151, T6430,
T6431, T6440, T6441, T6450, T6451 Series
Features:
10-, 15-, 30-, and 40-A Silicon Triacs • 3-kV rms encapsulant (HVPOT) breakdown voltage
For Phase-Control and Load-Switch ing Appl ications • Flame-resistant encapsulant (self-extinguishing)
• . Rugged packages
These RCA triacs are gate-controlled, full amperes. The T6431 , T6441 , and T6451· Standard RCA triac features
wave ac switches. They are designed to series have current ratings of 30 amperes. TERMINAL CONNECTIONS
switch from an off-state to an on state for Triacs in each series have voltage ratings of
either polarity of applied voltage with posi- 50 to 600 volts.
tive or negative gate triggering voltages.
The T4130, T4140, and T4150 series have The T4130, T4131, TC430, and T6431
current ratings of 15 amperes. The T4131, series employ a press-fit package with flexible
T4141, and T4151 series have current ratings leads, encapsulated on an isolated stud.
of 10 amperes. The T6430, T6440, and 82C$-217)O
T6450 series have current ratings of 40

Press-Fit. Isolated on T0-3 Flange
T4140 T8440
T4141 T6441
Wire Insulation
Rep. Peak On-State
Wire Size Thickness
Off-State Current MT Refer
MT
Voltage 1&2 Gate 1&2 Gate to Bul- FLEXIBLE·LEAD
Type VDROM (RMS)IT)I TC Package Gage Gage in. in_ letin (TERMINAL) CONNECTIONS
No. (V) (A) (OC) (Press-fit) No. No. (mm) (mm) File No."
Flexible-Lead
10-A Triacs - T4131, T4141. and T4151 Series Electrical and Mechanical Data (Insulation) Color Terminal
Yellow - Gate
T4131F 50 With flex.leads, Red - Main Terminal No.1
T43131B 200 0:031 0.016
10 85 en cap.on iso· 14 22 457 Black - Main Terminal No.2
T4131D 400 (0.787) (0.406)
lated·stud
T4131E 500 Note: Terminals are identified by color
T4131M 600 code only. Position of the flexible
T4141F 50 Isolated on leads (relative to terminals of the
T4141B 200 10 85 TO-3 flange - - - - 457 device) leaving the encapsulant
T4141D 400 is random.
T4141E 500
T4141M 600
T4151F 50 Press-Fit. Encapsulated on Isolated-Stud
T4151B 200 With flex.leads, with Flexible Leads
T4151D 400 0.031 0.0~6
encap.,isolated 14 22 457 T4130 T8430
(0.787) (0.406)
li~151t:
r4151M
500
600 on TO-3 flange
T4131 T8431
. rlBCS T4130 T4140 • an d T4150 Se rles

15 AT' Electrical and Mechanical Data
T4130F 50 With flex.leads, Press-Fit. Encapsulated. Isolated on
T4130B 200 0.031 0.016 TO-3 Flange with Flexible Leads
15 75 encap.on iso- 14 22 458
T4130D 400 (0.787) (0.406)
T4130E 500 lated·stud T41EiO T6460
T4161 T846'
T4130M 600
T4140F 50
T4140B 200 Isolated on
T4140D 400 TO-3 flange
- - - - 458
T4140E 500
T4140M 600
T4150F 50 With flex.leads, WARNING: The ceramic used in these pack-
T4150B 200 0.031 0.D16
15 75 encap.,isolated 14 22 458 ages contains beryllium oxide_ Do not crush.
T4150F 400 (0.787) (0.406)
T4150E 500 on TO·3 flange grind. or abrade these portions because the
T4150M 600 dust resulting from such action may be
30-A Trlacs - T6431 T6441 and T6451 Series Electrical and Mechanical Data hazardous if inhaled_ Disposal should be by
T6431F t)u burial.
T6431B 200 With flex.leads,
T6341D 400 0.034 0.016
30 55 encap.on iso· 12 22 459
T6431E 500 (0.863) (0.406)
lated-stud The T4140, T4141. T6440, and T6441
T6431M 600
series employ a press-fit package, isolated
T6441F 50
T6441B 200 onaTO-3flange.TheT4150. T4151, T6450.
Isolated on
T6441 0 400 30 55
TO-3 flange
- - - - 459 and T6451 series employ a press-fit package
T6441E 500 with flexible leads encapsulated on an iso-
T6441M 600 lated TO·3 flange.
486 ______________________________________________________________
_____________________________________________________________________________ TRIACS
T4130, T4131, T4140, T4150, T4151, T6430, T6431,

T6440, T6441, T6450, T6451 Series
Wire Insulation
Rep. Peak On·State
Wire Size Thickness
Off·State Current MT MT Refer
Voltage IT 1&2 Gate 1&2 Gate to Bul·
Type VOROM (RMS) TC Package Gage Gage in. in. letin
No. (V) (A) (OC) (Press·fit) No. No. (mm) (mm) File No.·
30·A Triacs - T6431 , T6441 and T6451 Series Electrical and Mechanical Data (cont'd)
T6451F 50 With flex.leads,
0.034 0.G16
T6451B 20030 55 encap.,isolated 12 22 4S9
T6451 0 400 (0.863) (0.406)
on TO·3 flange
T6451E 500
T6451M 600
40·A Tnacs - T6430, i'644O, and T6450 Saries Electrical and Mechanical Data
T6430F 50 With. flex.leads,
T6430B 200 encap. on iso· 0.034 0.016
T6430 400 40 60 12 22 593
lated·stud (0.863) (0.406)
T6430E 500
T6430M 600
T6440F 50
T6440B 200 Isolated on
T6440D
T6440E
400
500
40 60
TO·3 flange
- - - - 593
T6440M 600
T6450F 50 With flex.leads,
T6450B 200 encap .• isolated 0.034 0.016
T6450D 400 40 60 12 22 593
on TO·3 flange (0.863) (0.406)
T6450E 500
T6450M 600
• Eloctrical characteristics and ratings given in tha.. bulletins allO applv to the tvpesllsted in this chart.
____________________________________________________________________ 487
I
TRIACS
T 4700 Series
FIIBtures:
15-A Silicon Triacs :m!=::~~J.~ter~8'... DesilJl
For Low-Power Phase-Control and Load-Switching Applications :• Low
t:: Thermal
~:~~=atHigh Current Levels
Resirtance
RCA T 4700 series are gate·controll ed full·wave ao These devices are intended for the control of ac loads in
silicon switches. They are designed to switch from an off· applications such 85 space heater. oven and furnace controls,
state to a conducting state for either polarity of applied motor controls. and lamp loads.
voltage with positive or negative gate triggering.
MAXIMUM RATINGS, Ablolut.-Muimum Value.:

M I
For o".,.rion with 5O~Hz. Sinu,oidal Supply VoItaQB /Uld RtII;,tiR or i"ductbl1l LoMI T4700F T47008 T4700D T4700E
REPETITIVE PEAK OFF-STATE VOL TAGE:-
G.te Open .................. . V OROM 50 200 400 600 V
AMS ON·STATE CURRENT:
TC _10o e. conduction '"gle = 3fJIJo ..... . 'TIRMS) I. A
PEAK SURGE (NON·REPETITIVE) ON-$TATE CURRENT: IT8M
For one full cycle of applied principal yoltage
60 Hz (sinusoidaU, TC - 700c •......... 100 A
For onll full cycle of applied principal voltage
I50-Hz, sinUlOidal!. TC - 700c .. 85 A
For more thin one full cycle of applied voltage ... ·See Fill; 3
PEAK GATE-TRIGGER CURRENT:
For 1 "s max. A
BOTTOM VIEW
RATE OF CHANGE OF DNoSTATE CURRENT:
Vo - VOROM,IGT - 200 mAo tr - 0.1 ",I .. 160 AI~.
FUSING CURREN'"';, Ifor triac protection):
TJ'" -40 to 100 C,I"' 1.2610 10ms ... , ••• , •.•. 50 A 2, JEDEC T0-66
Peak- (for 1 ". max. and IGTM .. C;; 4 A) , .. , ... .... , ..• PGM 1. W
Aver. (averaging time .. 10 ms max.) ••• , .••• PG{AV) 0.45 W
TEMPERATURE RANGE:·
Stor. •...•....•..............•..............•.....• T,tll -40 to 150 ·c
()perating leese) .•...... , ..••......•....... ,............ TC -40 to 100' ·C
PIN TEMPERATURE (Ouring soldering):
At distancel > 1/32 in. (0.8 mm) from seeting plene for 10 I max. TP 225 ·C
• For either polarity of main terminal 2 voltage (VMT 2) with reference to main terminal 1.
- For either polarity of gatll volte" IV GI with reference to main terminal 1.
A For temperature musurement raference point,'" Di",.,,1ioIMI au,,",-.
f r-t+t
~
ClJRAENT WAVEFORM- SlNUSOIOAl
LOAD - RESISTIVE OR INDUCTIVE 1M LOAD:RESISTIVE
ANS ON-STATE CURRENT [tnRMSI]ol!5A
CONDUCTION ANGLE • 360· ti AT SPECIFIED CASE TEMP.
TEMPfRATURE IS MEASURED ON SASE AT t; GATE CONTROL MAY BE LOST
f POINT MIDWAV BETWEEN LEADS. Z
~ c 100
OURING .ND IMMEOIATElY FOLLOWING
SURGE CURRENT INTERVAL
ii ~~
ul
i;:u
~;;;
100
90
.,-
CONDUCTION AB.E
o 9 t +9ui
~
-_
I
~'i I~
t.J!60
1"-
~60-'1'..
~'"'''
'ot- OVERLOAD MAY NOT BE REPEATED
UfolTiL '"'UNCTION TEMPERATURE HAS
RETURNEO WITHIN STEADY·STATE
RATED VALUE.
~~ ..
I ;"
• 11
:I~
.0
70 _. - -
60
FUll-CYCLE RhlS ON-STATE CURRENT

0 2
• • •
RMSON-STATE CIJRftEN':' [IT Inn,ij-A
10 12 14
" 6 8 10 " 6 B,OI
SURGE CURRENT DURATION-FUll CYCLES
2 " 6 8103
Fig. 1-Power dissipation curve. Fig. 2-Conduction rating chart (case temperature). Fig. 3-Surge current rating chan.
ICASE _TURE (Te'-
.lo'::L":
h'"'' :l
g:r""I'I:::·
f,,,r ·:1'
I 2
INSTANTANEOUS ON-STATE VOLTAGE IVTI-v
\POSITIVE OR NEGATIVEl
Fig. 4-0n·state characteristics for either Fig. 5-DC holding current charactari8tics for Fig. 6-DC gate-trigger current charac·
direction of principal current. either dirlJCtion of principal current. teristics for 1+ and 111- modes.
488
TRIACS
T 4700 Series
At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (TC)
CHARACTERISTICS TRIAC TYPES UNITS

T4700B T4700D
Min. Typ. MIx. Min. Typ. MIX.
Peak Off.s.... Curron". IDROM
Gateopsn
At Tj "" +10Q0 C and VOAOM "". Max. rated value 0.2 4 0.2 4 mA
Instantaneous On-state Volta.... vr
For iT - 30 A lpeak) and T C - +250 C. . . . . . . . 1.6 2.0 1.6 2.0 Vlpeak)
DC Holding Currentl, IHO=
Gate Open I
Initial principal current'" 150 rnA Idel CASETEJI'ERATURE(TCI- OC
At TC· +250 C . . . . . . . . . . . . . . . . . 15 60 15 60 mAlde)
For other case temperatures .............. See Fig. 5 See Fig.5 Fig. 7-DC gate-trigger current charac·
Critical Rate of Applied Commutating Voltage6, teristics for ,- and 11/+ modes.
Commutating dv/dt:
For va· VDROM.ITlRMS) -15 A. eommutating PRINCIPAL OC VOLTS· 12
lOAO·12A. RESISTIVE
di/dt =8 Altns, and gate unenergized TRIGGERING MOOES: All
AtTC • +700 C. . . . . . . . . . . . . . . . . . . . 10 10 V//J5 -;.'
~
Critical Rate of Rise of Off-State Voltage'.
Critical dv/dt:
For vo :: VDROM. exponential voltage rise,
i
j 2
gate open
At TC - +1000 C. . . . . . . . . . . . . . . . . . . 30 150 20 100 V//J5
DC Gate-Trigger Currentl-, IG1
For yo "" 6 volts (dcl. R L =12 ohms,
TC "" +250 C, and Specified Triggering Mode:
1+ Mode: VT2 is positive, VG is positive ... 15 30 15 30 mAlde)
I' Mode: VT2 is positive. VG is negatiye... 35 60 36 60 mAlde)
111+ Mode: VT2;S negative, VG is positive ... 35 80 35 80 mAlde) -7~ -~o
III' Mode: VT2 is negative, VG is negative... 15 30 15 30 mAlde) CASE TEMPERATURE ITCI--'

For other case temperatures. . . . . . . . . . . . . . See Figs. 6 & 7 See Figs. 6 & 7
Fig. 8-DC gate· trigger voltage characteristics.
DC Gate-Trigger Volta'" -, VGT:
\
For vO ::I 6 volts (de) and R L ::I 12 ohms
AtTC • +250 C. . . . . . . . . . . . . . . . . . . .
For other case temperatures. . . . . . . . . . . .
I I 1
See Fig. S
2.5 I I
See Fig. S
2.5 Vide)
\
\
For vD - VDROM and RL - 125 ohm.

AtTC· +1000 C. . . . . . . .......... 0.2 0.2 Vldel
Gata-Controlled Turn.()n Time,lgt
For vD - VDROM, IGT -160 mA,
0.1 "'S rise time, and iT '" 25 A (peak)
At TC· +250 C. . . . . . . . . . . . . . . . . . . . 1.6 2.5 1.6 2.5 /J5
Thermal Resistance, Junction to case,
R9JC ............. . .. . . . .. . .. . . 1.3 1.3 oCIW
'For either polarity of main terminal 2 vol.tage (VT21 with reference to main terminal 1.
-For either polarity of gete voltage {VOl with reference to main terminal 1.
OC GATE-TRIGGER CURRENT CrGTI-mA
!l2CS·I7062.
Fig. 9- Turn-on time vs. gate-trigger curren t.
489
TRIACS
T6000, T6001, T6006 Series

• 150-A peak surge full-cycle
current ratings
Three-Lead Plastic Types for Power-Control
and Power-Switching Applications • Shorted-emitter center-gate design
• Low switching lossel
The RCA-T6000, T6001 and T6006 series The T6006-series triacs are characterized • Low thermal resistance
triacs are gate-controlled full-wave silicon for 1+ and 111+ gate-triggering modes only. • Package design facilitates mounting on a
switches utilizing a plastic case with three They are intended for power-control appli- printed-circuit board
leads to facilita.te mounting on printed- cations in which integrated-circuit zero-cross-
circuit boards. They are intended for the ing switches, such as the RCA-CA3059
control of ac loads in such applications as series, are used as the triac-triggering circuits.
motor controls, light dimmers, heating con- The T6006-series triacs have gate charac-
teristics which assure that a CA3059-series TERMINAL DESIGNATIONS
trols, and power-switching systems.
These devices are designed to switch from integrated circuit can supply sufficient gate MTI
an off-state to an on-state for either polarity current to trigger them over their full oper- MT2
MT2
Er-~
ating temperature range. (FLANGE)
of applied voltage with positive or negative
gate triggering voltages. They have an on-
state current rating of 16 amperes at a TC
The plastic package design provides not only
ease of mounting but also low thermal im-
•
of BOoC and repetitive off-state voltage pedance, which allows operation at high
VIEW
ratings of 50 to 600 volts. case temperatures and permits reduoed heat- GATE
sink size.
The T6001-series triacs are characterized for S2.CS-27716
1+, 111- gate triggering modes only and Le·ad-form options of the TO-220 pack-
age are available. See page on "Lead- JEDEC T0-220AB
should suit a wide range of applications
that employ diac or anode on/off triggering. Form for RCA Plastic Power Packages".

T6000F T6000B T6000c T60000 T6000E T6000M
T6001F T6001B T6001C T60010 T6001E T6001M
T6006B T6006C T60060 T6006E T6806M
RNS ON-STATE CURRENT [IT(RMSij-A
92CS-29278
• For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.
Fig. 2 - Maximum allowable case-temperature
• For aithar polarity of geta voltage (Val with refarance to main terminal 1.
vs on-state current.
490
TRIACS
T6000, T6001, T6006 Series

ELECTRICAL CHARACTERISTICS 180 SUPPLY FREQUENCY: SO/60Hz SINE WAVE
At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperatures _4

~I
.... I--
~ c-
I- LOAD: RESISTIVE
CASE TEMPERATURE (Tel- 80·e
RMS ON- STATE CURRENT [IrIRNSl] =16A
LIMITS E1 ,~ 1/
For All Type. ,~ 60",
CHARACTERISTIC Except a. Specified UNITS if'ZO '0"' oft-...
_I
Min. 'Typ. Max.
90
Ir . . ~
IOROM-
!~ GATE CONTROL MAY 8E LOS
60 DURING AND IMMEOIATELY
~
T J = ll00C, VOROM = Max. rated value - 0.1 1.2 mA ~~ FOLLOWING SURGE CURRENT
INTERVAL. """' ...
! :so
OVERLOAD MAY NOT BE
REPEATED UNTIL .JUNCTION
¥YM-
iT = 30 A (peak), TC
IHO-
= 25 0 C
T6000, T6006 Series
T6oo1 Series
-
-
1.4
1.8
1.75
2.0
V o
2 ."'
TEMPERATURE HAS RETURNED
TO STEADY· STATE RATED
VALUE.
10
SURGE CURRENT DURATION -
f 4 • I
100
FULL CYCLES
2 ... 1000
'ZCS-Z'Z19
Vo = 12 V, TC = 25°C T6000 Series - 15 35

mA
Fig. 3 - Peak surge on'state curren t vs surge
T6001 Series - 20 50 current duration.
dv/d~
vo = VOROM, IT(RMS) = 16 A, di/dt = 8.5A/ms,
TC = 800C 4 10 - V/p.s
dv/dte
Vo = VOROM, TC = 1000C
T6000B,T6001B,T6oo6B 100 300 -
T600OC,T6001C,T6006C 85 275 -
T600OD, T60010, T60060 75 250 - V/p.s
T6000E,T6oo1E,T6006E - 65 225
T600OM, T6001M, T6006M . 60 200 - 2
TIME (tI-IftI
4 IS 1
" .ZCS-Zt280
IG"" Mode VMT2 VG Fig. 4 - Peak surge on·state current and

Vo = 12 V (de) 1+ positive positive T6000 series - 25 50 fusing-current vs time.
RL = 30n T6001 series - - 80
TC= 25°C T6006 series - - 45 mA
111- negative negative T6000 series - 25 50
T6001 series - - 80
1- positive negative T6000 series only - 45 80
111+ negative positive T6000 series only - 45 80
mA
T6006 - - 45
For other case temperatures. See Figs. 9 and 10
VGT"
T6001 1+ 111- - 1.25 3.0
vo = 12 V (de), RL = 30 n, TC =25°C T6006 1+ 111+ - 1.25 1.5 V
T6000 all modes - 1.25 2.5 Fig. 5 - Gate pulse characteristics for all
triggering modes.
Vo = VOROM, RL = 125 n, TC = 1000C 0.2 - -
For other case temperatures. See Fig. 11
tgt
vo = VOROM, IGT = 80 mA, tr = 0.1 p.s, iT = 25 A (peak),
TC = 250C - 1.6 2.5 p.s
R8JC. - - 1.5 °CIW
R8JA' - - 50 OCIW
_ For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
• For either polarity of gate voltage (V G) with reference to main terminal 1.
POStTIVE OR NEGATIVE INSTANTANEOUS
.a. Variants of these devices having dV/dt characteristics selected specifically for inductive loads ON-STATE WLtAGE(vT)-V
92CS-21Z81
are available on special order; for additional information, contact your RCA Representative
or your RCA Distributor. Fig. 6 - On·state current vs on·state voltage.
491
TRIACS
T6000, T6001, T6006 Series
CASE TEMPERATURE CTcl-·C

CASE TEMPERATURE; {TC) _·C _-~I
92(:8-29282
Fig. 7 - DC holding current vs case temperatura. Fig. 8 - Typical critical rate-of·rise of off·state Fig. 9 - DC gate· trigger current (for 1+ and 1/1-
voltage vs case temperature. triggering modes) vs case temperature.
CASE TEMPERATURE {Tc)--C

92C5-292.5
Fig. 10 - DC gate-trigger current (for 1- and 1/1+ Fig. 11 - DC gate· trigger voltage vs case tempe,. Fig. 12 - Tum·on time vs gate·triggercurrent.
triggering modes) vs case temperature ature for T6000 series only.
for T6000..eries only.
G2 _________________________________________________________________
____________________________________________________________________________________ TRIACS
2N6342A-2N6344A, 2N6346A-2N6348A, (T6000) Series

• 120-A peak surge full-cycle current ratings
Three-Lead Plastic Types for Power-Control • Shorted-emitter center-gata design
and Power-Switching Applications • Low switching losses
• Low thermal resistance
The 2N6342A-44A, and 2N6346A-48A of applied voltage with positive or negative • Glass-passivated chip for stability
series triacs are gate-controlled full-wave gate triggering voltages_ They have an on- • Package design facilitates mounting on a
silicon switches utilizing a plastic case with state current rating of 12 amperes at a Te printed-circuit board
three leads to facilitate mounting on printed- of 80°C and repetitive off-state vortage
circuit boards_ They are intended for the ratings of 200, 400, and 600 volts. The
control of ac loads in such applications as plastic package design provides not only
motor controls; light dimmers, heating con- ease of mounting but also low thermal im-
trols, and power-switching systems_ pedance, which allows operation at high
case temperatures and permits reduced heat- TERMINAL CONNECTIONS
These devices are designed to switch from
sink size.
an off-state to an on-state for either polarity
MTI
MT2 MT2
Maximum Ratings, Absolute-Maximum Values: 2N6342A 2N6343A 2N6344A
2N63414 2N6348A (FLANGE)
2N6346A
• VOROMe T J = -".P
'a 110oe o 200 400 600 V •
• 'TIRMSI T e = 80 e,8 • 360 12 A
For other conditions See Fig. 5 BOTTOM VIEW
GATE
'TSM
For one full cycle of applied prJncipal voltage 92CS-27718
• 60 Hz Isinusoidal), T e = BO e. . . . 120 A
JEOEC TO·220AB
50 Hz (sinusoidal), Te = BOoe. 113 A
Fbr more than one cycle of applied principal voltage See Fig. 6
di/ ..,
Vo = VOROM,'GT = 200 mA, 'r = 0.1 "s . 100 A/"s
,2, (A' T e shown for IT(RMSI' half-sine wavel:
,= 10ms. 64
= 2.5 ms. 40
=0.5ms. 23
• = 1 ,oll.3ms 40
• 'GTM-
4
For 1 JlS max.
• PGM IFor 1 "s mex., 'GTM ..; 4 Al 20
• PGIAVI 0.5
• Ts,g ---- -40 'a 150
• Te -40'0 110
• T T lOuring soldering for 10 s max.1 230
• In accordance with JEDEC registration data format JC-22 RDF-2 .

• For either polarity to main terminal 2 voltage (V MT2 ) with reference to main terminal 1. Fig. , - PrincipalllOltagtl'Currenr chBracteristic.
• For either polarity to gate voltage (V G) with reference 10 main terminal 1.
zo
T
l- 'ef--f---+----''/----,Ij-,hlh'-+---i
j
~ 12f--+--+-+-b~~~-!---+----I
~
15
~ .f--+--~~~~-4-
~ 4 '-CiDUCTIOj ANGLE
~ f--+t'~~--'fg:~~::S~~~'i'~:=~~~~I~L
CONDUCTION ANGLE.,I:380-
CASE TEMPERATURE (TCI-lIo-C
4 6 8 10 12 '4 024 101214
FULL-CYCLE AVERAGE o..-STATE CURRENT [IT(Avll-A FULL-CYCLE RMS ON-STATE CURRENT [ITIRMSI] -:zcs-303e,
92CS-30364
Fig. 2 - Power dilSipat;on as a function of average Fig. 3 - Power diSSipation as a function of rms Fig. 4 - Maximum allowable case·temperature
on-state current~
o.n-state cu"en t. as a function of aWltagB On-ltBte CUffflnt.
__________________________________________________________________________ ~3
TRIACS ____________________________________________________________________________________

At Maximum Ratings Un_ Otherwi. $ptIcifitld, and at Indlcatrld Tflmperaturn
LIMITS
For All Types
Except. Specified
Min. Typ. Max.
• IOROM-
TJ = 110·C, VOROM = Max. rated value - - 2 mA
• vTM-
iT = 17A (peak), TC = 25·C - 1.3 1.75 V
IHO- FULL.-CYCLE RMS ON-STATE CURRENT [IT(RMS~ -A tZCs-30'3n
Gate open, Initial principal current = 200 mA Fig. 5 - Mliximum allo_ble ca..-temperature a. a
Vo = 12V, TC = 25·C - 6 40 mA function of rms on-stBte current.
• = -40·C - - 75
GATE CONTROL MAV BE
dv/dt- (Commutating) LOST DURING AND IMMfDIATELY
Vo = VOROM, ITM = 17A, di/dt =6.5A/ms, , FOLLOWING SURGE CURRENT

INTERVAL. •
~i OVERL.OAD MAY NOT BE
TC = ao·C - 5 - -'2
~.~
REPEATED UNTIL JUNCTION
TO STEADY-STATE RATED VAL.UE.
dv/dt- (Off-State) ::-- I
Vo = VOROM' TC = 100·C VIlAS if
;;;L 60",
2N6342A, 2N6346A
2N6343A, 2N634 7A
2N6344A, 2N6348A
100 300
75 250
60 200
-
-
-
I
~~
U
~o-
~7
. sot;;-
SUPPLY FREQUENCY: !5O/ao Hz SINE WAYE

I
"i!i .. LOAD RESISTIVE
IGT- vo = 12V (de), RL = lOOn CASE TEMPERATURE nc~·8O-C
AMS ON- STATE CURRENT [IT(RMS))-12A
Mode VMT2 VG
1+ + + - 6 50
2
•
• • 10
Nel-IO'"
TC = 25°C 111- - - - 10 50 Flg_ 6 - Peak surge on-state current lila function
1- + - (2N6346A-48A only) - 6 75 of surge current duration.
111+ - + (2N6346A-48A only) - 25 75 mA
*
*
*
TC=-40·C
1+
111-
1-
+
+
-
+
-
- (2N6346A-48A only)
-
-
-
-
-
-
100
100
125
.
-'" .
I~. AT TC SHOWN FOR
i',\~.~~11
......",,,,,,
IT(RMS~--t:t;t.£r--
....
.
,""
* 111+ - + (2N6346A-48A only) - - 125

~I
~~ 2
f<~..'(,"LU"N~-;-r-- • I!I'"
~ ...
VGT- vo = 12V (de), RL = lOOn w!:!
~o-
~tJ ~J
Mode VMT2 VG §~IOO IO~!j
- ;;;!i • 'r!
1+ + + o.g 2
~~ , ~~
TC = 25°C 111- - - - 1.1 2 ale
~>'
4 41 ~
1- + - (2N6346A-48A onlyi - o.g 2.5 ",0
w'
"i!i ,
- -
. ..
111+ + (2N6346A-48A only) 1.4 2.5 2
* 1+ + + - - 2.5 10
, • •• • •
1
* TC = -40·C 111- - - - - 2.5 1

TIME (t) - m.
10
92CI-aOUI
• 1- + - (2N6346A-48A only) - - 3 V Fig. 1 - Peak .urge on-state current and fUling

* 111+ - + (2N6346A-48A only) - - 3
vo = VOROM, RL = 10kn
1+ + + 0.2 - -
TJ= 110·C 111- - - 0.2 - -
1- + - (2N6346A-48A only) 0.2 - -
111+ - + (2N6346A-48A only) 0.2 - -
* tgt
Vo = VORQM' IGT = 120mA, tr= 0.1 lAs, iT = 17A (peak).
TC = 25 C - 1.5 2 lAs
• R8JC - - 2 ·C/W
• In accordance with JEDEC registration data format JC-22 RDF2 .

• For either polarity of main terminal 2 voltage (V M T2) with reference to main terminal 1. 0.40.8 t.2 I.' a 2.42.' 1.23.8 44.4
• For either polaritv of gate voltage IV G) with refarence to main terminal 1. O~-STATE VOLTAGE ('Tt-V ttel-lOM'
Fig. 8 - On-state current a.a function of on-stata
I/O/rage.
494 _______________________________________________________________________________________________
______________________- -_____________________________________________________________ TRIACS

, INITIAL ON- STATE CURRENT I l.T'· 200mA PRINCIPAL. DC VOL.TAGE -'2 v
• \ LOAO-loon RESISTIVE
TRIGGERIJIIG MODES ALL
j
~
r\ -r-r--- --~r--- r--t----j-t--r-1
z
'"
w
~
~
~ 1
I--r-b
u
i • ~ Bt--t--i--t--- r- -.--t--t-:::'---f~--r-j
i
D
:::· r-....
'" "'
~
~
"f---+-t---+--t----t--t--i-+-t--!
i ,·
~ i 41t---+-t--t~
-60 -"40 -'0 0 40 10 10 100 120 1 -60 -40 -20 0 20 40 80 80 100 120 140 20 40 60 60 100 120 140
CASE TEMPERATURE 1TC'--C IlICS-301M CASE' TEMPERATURE 1TCI--C 92CS.30389 CASE TEMPERATURE ITe )_·c 92CS-30370
Fig. 9 - Normalized holding current as a function Fig. 10 - Normalized gate trigger current as B Fig. 71 - Normalized gate trigger voltage BS a
of case temperature. function of case tempfII'IIture. function of case temperature.
"
0'
2. •••
1
iI:
10
...
102
TIME Ill-iftl
4 II
101
HCS-10!'P1
'1
104
Fig. 12 - Normalized transient the,.",8' resistance

as a function of time.
________________________________________________________________ 495
TRIACS ____________________________________________________________________________________
MAC15, MAC15A (T6000) Series

1S-A Silicon Triaes Features:
• 150-A peak surge full-cycle current ratings
Three-Lead Plastic Types for Power-Control • Shorted·emitter center-gate design
and Power-Switching Applications • Low switching losses
The RCA-MAC15 and MAC15A series triacs applied voltage with positive or negative gate
are gate-controlled full-wave silicon switches • Glass·passivated chip for stability
triggering voltages_ They have an on-state cur-
utilizing a plastic case with three leads to rent rating of 12-A at TC = 9So C and 15-A at • Package design facilitates mounting on a
facilitate mounting on printed-circuit boards_ T C = aooc and repetitive off-state voltage printed-circuit board
They are intended for the control of ac ratings, of 200, 400, and 600 volts_
loads in such applications as motor controls, The plastic package design provides not_ only
light dimmers, heating controls, and power- ease of mounting but also low thermal im- TERMINAL CONNECTIONS
switching systems_ pedance, which allows operation at high MTI
These devices are designed to switch from an case temperatures and permits reduced heat- MT2 ~
!' ,: L MT2
off-state to an on-state for either polarity of sink size_ (FLANGE) •
0 I I •
L..n.. I'
MAC 15-4 MACII5-8 MAC1S-8
eoTTOM VIEW I
GATE
MACI5A·4 MACI5A-8 MACI6A-8 tZCS·27718
V OROM - T J • -;;40 to 125°C_ 200 400 600 V
JEDEC TD·220AB
'TIRMS) B ~ 360 :
T C ~ 95 C 12 A
• BOoC 15 A
For other conditions Se. Fig. 3
'TSM:
For one full cycle of applied prinCipal voltage, at
c~rrent and temperature shown above for 'T(RMS)
60 Hz Isinusoidal) _ 150 A
50 Hz (sinusoida') _ 140 A
For more than one cycle of applied principal voltage See Fig.4
di/dt
vO· VOROM,IGT· 200 rnA, t r • 0_11" 100 AI,..
IGTM"
For 1 ,",S max. 2 A
PGM (For 1 1'5 maK_, IGTM ";;;. A) 20 W
PG(AV) - 0.5 W
Fig, 1 - Principal voltage-current characferistic_
Tstg -4Oto 150 °c
TC- -40 to 125 °c
TT (During soldering for 10 s max.) 230 1 °c
• For either polarity of main terminal 2 voltage (V MT2 ) with reference to main terminal1 •
• For either polarity of gate voltage (V G ) with reference to main terminal 1.
,uw. :J~~:::Ui~;
GATE CONTROL MAY 8E
I - IMMEDIATELY
LOST DURING AND
LOAD: RESISTIVE
• CASE TEMPERATURE
(Tcl- 80·C
,..... FOLLOWtNG
SURGE CURRENT INTERVAl...
OVERt..OAD MAY NOT B£
ii RMS ON· 8TATE CURRENT REPEATED UNTIL JUNCTION
~"
r~
• [tTl"MS']·'O' r- TEMPERATURE HAS
RETURNED TO STEADY-
STATE RATED VALUE
rt::
~i
ilE •
i~ ::::,--.
:~IOO
BOHr
~,
~5
· SO Hr
r-
1
FULL CYCLE RMS ON -STATE CURRENT [ITIRMSll-;~s-:so42T
2 1
FULL C'(Q.E RMS ON·8TATE CURRENT [ITe RM~I]-A
40
• . .
SURG£ CURRENT DURATION - FULL CYCLES
10
PeBk surge on-sftlte current as'""'!IIM"

'2CS-S04n
Fig. 2 - Power dissipation as a function of on-state Fig. 3 - Maximum allowable case-temperature as 8 Fig. 4 - function of
B
current. function of on-state current. surge cu"ent duration.
496 _________________________________________________________________
________________________________________________________________________________________ TRIACS
MAC15, MAC15A (T6000) Series
··
lOU,
At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperatures
~ ~
LIMITS ~'" 2
For All Types

z I
~!-IO. f--/>
f
CHARACTERISTIC ;!;:
. 'f=~1
UNITS 6
Except as Specified
ei
au I--
Min. Typ. Max. 2 ,!!
:~
IOROM- o~
~~
I
I-- iii
•
6
~f
VOROM = Max. rated value, TC = 125°C - - 2 mA EO .. I-i!
~
vTM-
T C = 25°C, iT = 21 A (peak) - 1.3 1.6 V
0.1
2
0.4
Hi 0.8 U 1.6 2.4 2.8 3.2 3.6 •..
ON-STATE VOLTAGE hTl-V 92CS-30428
Fig. 5 - On-state current as a function of on-state
IHO-
voltage.
Gate open, I nitial principal current = 200 mA (de)
Vo = 12 V, T C = 25°C - 6 40 mA • INITIAL ON ~ STATE CURRENT (ITI z 200 rnA
dv/dt- (Commutating) "•

Vo = VOROM. iT = 21A (peak) .1
~o 2
>-.
\
di/dt = 8 Alms, T C = SOoC - 5 - V/I/.s "H
'"'"
ffi-
z>-
IGT- Vo = 12 V (de), RL = 100 n
TC=25°C Mode VMT2 VG
~i
FU I
1+ + + - - 50 ~~ ,
111- - - - - 50
mA ig '"""
.........
1- + - MAC15A series only - - 75 • I"'-- .....
111+ -
+ MAC15A series only - - 75 o.
-60 -40 -2O 20 40 60 80 I00
VGT- Vo = 12 V (de), RL = 100 n CASE TEMPERATURE (Tcl- ec° nCS-30432
120 140
TC = 25°C Mode Fig. 6 - DC holding current as a function of case

VMT2 VG
temperature.
1+ + + - 0.9 2
111- - - - 1.1 2
1- + - MAC15A series only - 0.9 2.5
PRINCIPAL DC VOLTAGE. 12 V
111+ - + MAC15A series only - 1.4 2.5 V LOAD • 100 A, RESISTIVE
TRIGGERING MODES: ALL
TC = 110°C Vo = VOROM, RL = 10 kn
1+ + + 0.2 - -
111- - - 0.2 - -
1- + - MAC15Aseriesonly 0.2 - -
111+ - + MAC15A series only 0.2 - -
tgt
Vo = VOROM' IGT = 120 mAo tr = 0.11/.5, iT = 17A (peak).
TC = 25°C - 1.5 2 1/.5
0.'
R9JC - - 2 °CIW -60 -40 -20 20 40
CASE TEMPERATURE (Tcl-·C
60 80 100 120 140
NCI-504S1
• For either polarity of main terminal 2 voltage (V MT2) with reference t9 main terminal 1.
Fig. 7 - Normalized gate trigger current as a function
• For either polarity of gata voltage (V G) with reference to main terminal 1. of case temperature.
PRINCIPAL DC VOLTAGE. 12 Y
-.:.. LOAD-IOO a , RESISTIVE
§' TRIGGERING MODES, ALL
E
~ 2r--r--r--+--+--+--+--1--1--1~~
a
~~ I r--r-r--+-"""dr--+--1-1--1-~
........ I""-r-..
~
J ......... r-.
; .,r--+-+--t-+--1-1--1r-~-r_~
~
o. 0.02
-60 -40 -20 0 zo 40 60 80 100 120 140 0.1 2 468 1 2 41810 2 4 "00 2 4 'fooo2 4 fJooo
CASE TEMPERATURE (Te) _·C TIME(t}-ml
InC$-30430 ,ZCS-JC)4Z1
Fig. 8 - Normalized gate trigger voltage as a function Fig. 9 - Normalized transient thermal resistance
of CBse temperature. as a function of time.
_______________________________________________________________ 497
TRIACS ____________________________________________________________________________________
SC149, SC151 (T6000) Series
12-A and 15-A Silicon Triacs Features:

• , 2O-A peak surge full-cycle current ratings
Three,Lead Plastic Types for Power-Control • Shorted-emitter center-gate design
and Power-Switching Applications • Lew switchin!llosses
The RCA-SC 149 and SC 151 series triacs are of applied voltage with positive or negative • Glass-passivated chip for stability
gate-controlled full-wave silicon switches gate triggering voltages. They have an on· • Package design facilitates mounting on a
utilizing the RCA VERSAWATT plastic state current rating of 12·A at TC = 75°C -printed-circuit board
package (JEDEC TO-220AB) with three leads (SC149 series) and 15-A at TC ,,; BOoC
to facilitate mounting on printed-circuit (SC151 series) and repetitive off·state voltage
boards. They are intended for the control of ratings, of 200, 400, 500, and 600 volts. The
ac loads in such applications as motor con- plastic package design provides not only ease
trols, light dimmers, heating controls, and of mounting but also low thermal impedance,
power·switching systems. which allows operation at high case tempera-
tures and permits reduced heat·sink size.
These devices are designed to switch from
an off-state to an on·state for either polarity
MTI
Maximum Ratings,Absolute-Maximum Values: SCI49B SCI490 SC149E SCI49M MT2
MT2
SC151B SC1510 SC151E SC1S1M (FLANGE)
V OROM - TJ = -~ to 100°C
ITIRMS) 8 = 360 ,
200 400 500 600 V •
For SC149 series, T C = 75°C 12 A
BOTTOM VIEW
For SC151 series, T C· BOoC 15 A GATE
For other conditions See Fig. 4 92eS-27118
ITSM '
For one full cycle of applied principal voltage, at
current and temperature shown above for IT(RMS)' JEOEC TO-220AB
60 Hz (sinusoidal) . 120 A
50 Hz (sinusoidal) • 113 A
For more than one cycle of applied principal voltage See Fig. S
dildt
vO=V OROM,I GT =200mA,t r =0.11'" . 100 AI!'s
12t [At T C ,hown for ITlRMS)' half·sine wave] ,
A 2, 'I
t = 10 ms . 64
2.5 ms. 40 A 2s
0.5ms. ------ 23 A 2,
IGTM-
For II's max. A -v <V
PGM (For 1 I'S max., IGTM .;;; 4 A) 10 W

PG(AV) . 0.5 W
T stg -40 to 125 °c
TC -40 to 100 °c 9l1oS-lZ14A7
T T (Ouring soldering for 10. max.) 230 °c
Fig. 1 - Principal voltage-current characteristic.
- For either polarity of main terminal 2 voltage (V MT2) with reference to main terminal 1.
- For either polarity of gate voltage (V G) with reference to main terminal 1.
,.
T
CI4
CURRENT WAVEFORN:SINUSOIOA\.
I.OAD;RESISTIVE OR INDUCTIVE
II CONDUCTION ... NILICI): aeo·
/' •I
CM
S2 eURRENT WAVEFORM~SINUSOIDAL
LOAO;AESISTIVE OR INDUCTiVE
2 CONDUCTION ANGLEIfl: 560·
/
.....
I
~
,~
I~ :-.....
CURRENT WAVEFORM;SIItUSOIDAL
L.OAD: RESISTIVE OR INDUCTIVE
CONDUCTION AftGL.EIf):560·
""'- :--... ........

TEMPERATURE MEASURED AS
SHOWN ON DIMENSIONAL. OUTLINE
i I. /
~2 / ~ "- ~c,.jJ--
I• 10
/'
/
~
20
I. V f
ii
8&
" ~{ ~.
l!\
~
~
• /
/
l~r1 i• "
• V /' !~r'1 ;
L
~
qf-
Be
,..
0' t8O'" 360'
~
•
.~ ,.
2 o 180'\V360'
'''''~J- i ,/
i /" a
o
/"" 2 .. • • 10
COttDUC1lOt.I ANGL!
+ &111
FULL-CYCLE 'UIS ON-STATE CURRENT [lTIRM.~-A

·'1
12
•= • V
• , • • •
./
./
I.
CONDUCTION ANGLE
I. '6 t
" [ITeRMs!]-A
I.
+ 6 111
I.
•
. a
CONDUCTtON ANGLE
.6. + ell•
• • • •
FULL-CYCLE RMS ON-STATE CURRENT" [ITeRMsl]
I. 14
'2~'-30S51
I.
FULL-CYCLE RMS ON-STATE CURRENT
.eea-IOM' nCS-303SD
Fig. 2 - F()wer dissipation 11.11 functio.n of on-stllte Fig. 3 - Power dissipation 11.11 function of on-stet. Fig. 4 - Maximum IIl10weble CII8IHemp/lfBtuI'BIlSIl
curl'Bnt for SC 749 s/lfitll. CUfI'Bnt for SC157 ",ri••• function of on-stllte CUrl'Bnt for both ",ritll.
498 __________________________________~-------------------------------
________________________________________________________________________________________ TRIACS

120
ELECTRICAL CHARACTERISTICS SUPPLY' FREQUENCY: 50/60 Hz SINE WAVE
At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperatures LOAD RESISTIVE
" .'\60"
_100
AMS ~-STATE CURRENT [ITIAMsU •
RATED VALUE AT SPECIFIED CASE
LIMITS TEMPERATURE, Tc
~.
'\
CHARACTERISTIC
For All Types
Except as Specified
UNITS
".
1:.!.90
~E
"'", I"-
IOROM-
Min. Typ. Max. §~70
-~
~§
~uOO
" l"-
VOROM = Max. rated value, T C = 25°C - - 0.1 mA
~~
!~ec ~g~!gE~~:iJ~~~~~~:~ --..
INTERVAl..
= 100°C - - 0.5 ~~.., OVERLOAD MAY NOT BE r--t--
. .. . ..
REPEATED UNTIL JUNeTlOIII
vTM-
-
,
30 TO STEADY-STATE RATED VAL.UE, I
,
TC= 25°C, iT= 17A (peak) SC149 serjes - 1.65
V
10
100
= 21A (peak) SC151 series - - 1.62 9ZCS-30352
Fig. 5 - Peak surge on-state current as a function

IHO- of surge current duration.
Gate open, initial principal current = 500 mA (de)
vO=12V,TC=25°C
= -40°C
-
-
-
-
50
100 .
I~. AT TC SHOWN fOR IT(RMS~~2t---
~
, ,.,c''*11
~.,<
··· .
<~"I(p"LU
-< •
IL- ~I
~",
RGK = 100 n, tw = 50 MS, tr = tf = 5Ms, f = 1 kHz, mA
~g 2 f--~ Sl;,.~t-
, ~<
TC=25°C Mode ~l
VMT2 VG ~~) ~.:
~" IO!z ~
1+ + + - - 100 ~ ~IOO
111- - - - - 100
~~
tJa
8
:~~
~~
6
1- + - - - 200 ~~ 4
• Z 0
::i~ ~g:
TC= -40°C 1+ + + - - 200 ~,
~5 ,
.,.
2
-
.,.
111- - -
.
- 200
1- + - - - 400 10
, , , I
I 10
dv/dt- (Commutating) TIME (1)-'118
t
Fig. 6 - Peak surge on~state current and fusing
vo = VOROM, IT(RMS) = Max. rated value,
di/dt = 6.4 A/ms, TC = 75°C SC149 series 4 - -
di/dt = 8.1 Alms, T ~ = 80° C SC151 series 4 - - V/Ms PEAl< INSTANTANEOUS GATE
POWER DISSIPATION EQUALS 4
dv/dt- (Off·State) 10 WATTS MAXIMUM FOR 10 -
MICROSECONDS PULSE WIDTH, 2:
Vo =VOROM, TC = 100°C, Exponential voltage rise
SC149 series 100 200 - . -- 0
o 025
SC151 series 100 250 -
IGT" Vo = 12 V (de)
TC=25°C RL-n Mode VMT2 VG
100 1+ + + - - 50
100 111- - - - - 50 mA
50 1- + - - - 50
TC= -40°C 50 1+ + + - - 80 o O,S t 1·5 2: 2.5 :3 35
50 111- - - - - 80 POSITIVE OR NEGATIVE DC GATE - TRIGGER CURRENT (IGrl-A
25 1- + - - - 80 Fig. 7 - Gate pulse characteristics for all

triggering modes.
VGT" Vo = 12 V (de)
TC=25°C RL-n Mode VMT2 VG
100 1+ + + - - 2.5
100 111- - - - - 2.5
50 1- + - - - 2.5 V
TC=-40°C 50 1+ + + - - 3.5
50 111- - - - - 3.5
25 1- + - - - 3.5
See footnotes on top of next page.
0.5 r 1.5 Z 2.5 :3 35 4 4,5

POSITivE OR NEGATIVE INSTANTANEOUS
ON-STATE vOLTAGE (VT)-V
Fig. 8 - On-state current as a function of on-state

voltage for SC149 series.
______________________________________________________________________ 499
TRIACS _________________________________________________________________________

ELECTRICAL CHARACTERISTICS (Cont'dl
At Maximum Ratings Unless Otherwise Specified. and at Indicated Temperatures
LIMITS
For AII.Types
Except as Specified
Min. Typ. Max. . ,
.-
;c : ~
.:
VGO-
vO=VOROM. RL = lkn, TC = 100°C (For all ~, ~
.//
triggering modes) 0.2 - - V
~ I
tgt !5 -f, I 2
Vo = V OROM, IGT = 80 mA, tr = 0.1 /IS, iT = 25 A (peak),

TC=25°C - 1.6 2.5 ILS ~~
w'
~~ :
25-C .JUNCTION TEMPERATURE T J I _
IOO'C
~Z 4
Thermal Characteristics iO 2
ROJC - - 2 Q,
0.' I 1.5 2 UI
ROJA - - 75
°CIW
ON-STATE VOLTAGE C¥,I-V
Fig. 9 - On-state currtmt as a function of on-stBte
.2CS":30I!J!t
voltage fo, Se151 series.

ROJC(ac)*
Ouring ac current conduction SC149 series - - 1.52
SC151 series - - 1.1
• For either polarity of main terminal 2 voltage (V MT 2) with reference to main terminal 1.
: For either polarity of gate voltf;lge (V G) with reference to main terminal 1.
This characteristic is useful in the calculation of junction~temperature rise above T C for ae current
conduction and applies for a 50 or 60 Hz full sine wave of current. It can be calculated with the
following formula:
_'00 ........ 0..,

~
INITIAL ON- STATE CURRENT 11TI~ eOOmA 0O
RECTANGULAR PULSE APPLIED
........ c RISE AND FALL TIMES! 10 ..
c 90
I ""- r--...
'1
J,. ""- r--.....
->CO
1 " OFGATE PULSE WIDTH
PRINCIPAL DC VOLTAGE -12 Y
,+
"'080 :00 1 \. '(.25·C LOAD RESIST lYE MODE
IODA
,,-
111-
>%
["-. I~~:
,W
5~
§
"'"
........... 'c·- 4O- C OOD
~~
~f5
ffi ODD 111-
,-
~ ~
iI! .OD
I§§ B 40 B UK 1'\.1 I
w"
i~ PRINCIPAL IX VOLTAGE -12 V
i
"'"
CURVE APPL.IES FOR
~~ EITHER POLARITY OF MAIN 'C.25-C LOAD RESISTIVE MODE
~~ ec -
TERMINAL 2 REFERENCED TO
"- 30
loon If.
- ~I
MA'T"M'Nr I § TC·-40 - C
100A
111:&
ODD
IW
1-
§ i~ 1'CJ- 2s • c
•• IU-
-
rI
ODD
" " ~
"40
"-
S
,. I I I Z'i I
K
r .I I , , ,
40 30 -~ - ~
CASE TEMPERATURE {TC)_·C
• ~ ~
.zes- sone
30 40 30 W -~ 0 ~
CASE TEMPERATURE 1Tc l - - C
~ 30 ~ 00
,ZCS-lOUt
~ 2
• N
GATE PULSE WIDTH Ct.p)-~. HCI-SOHO
0
Fig. 10 - DC holding current.s a function of case Fig. 11 - DC gate t,igga, cu,rent as a function of Fig. 12 - PNk gate trigger current as a function of
temperature. case temperature. gate pulse width.
t11 • I-- I--

.......... ~
I"'-
=
=
~2
~ 2 PRINCIPAL DC VOLTAGE -12 Y

1
.
~
N
1M SCI., SERIES
~ 1.0 ~.....
TC·2S-C LOAD RESIST lYE MODE
II.S :~~ 11::-

,- _ _
I III
'sd'~"SE"\ES
I
~ '~~~~~=F~~~R=F*~
000
1'1 Tc ··40·C OOD

ODD
"F" -
~
10,S I I I i O
I I !~ 0,
~~ 0
-40 '5O ·20 "0 0 '0 20 30 40 00 ~ 2 .... 2 .... 2 .... 2 ....
I) 102 105 10"
CAS~ TEMPERATURE (Tc)--C 82C5-503" NUMBER OF SINE WAVE CURRENT C,!,CLES t2C'-505'Z
Fig. 13 - DC gate· trigger voltage as. function of Fig. 14 - Thermal impedance a. B function of sine-
case temperature.
weYe current cycles.
500 ____________________________________ ~ _________________________

_____________________________________________________________________--_____ TRIACS
TIC236, TIC246 (T6000) Series

12-A and 16-A Silicon Triacs Features:
• 100-A and 125-A peak surge full-cycle
Three-Lead Plastic Types for Power-Control currrent ratings
and Power-Switching Applicatioris • Shorted-emitter center-gate des ign
• Low switching losses
The RCA-TIC236 and TIC246 series triacs of applied voltage with positive or negative • Low thermal resistance
are gate-controlled fu II-wave silicon switches gate triggering voltages. They have an ori-
state current rating of 12-A and 16-A at • Glass-passivated chip for stability
utilizing a plastic case with three leads
to facilitate mounting on printed-circuit T C of 70° C and repetitive off-state voltage • Package design facilitates mounting on a
boards. They are intended for the control ratings of 200 and 400 volts. printed-circuit board
of ac loads in such applications as motor The plastic package design provides not only
controls, light dimmers, heating controls, ease of mounting but also low thermal im-
and power-switching systems. pedance, which allows operation at high
These devices are designed to switch from case temperatures and permits reduced heat-
an off-state to an on-state for either polarity sink size. TERMINAL CONNECTIONS
MTI
MT2
Maximum Ratings, Absolute-Maximum Values: TIC2388 TlC238D MT2
TIC2468 TIC248D (FLANGE)
V OAOM - TJ = -~o to 110°<;, 200 400 v •
ITIAMSI T C =70 C,8 =360
For TIC236 series . 12 _ __
A
16 _ __
For TlC246 series . A GATE
For o.ther conditions _ _ See Fig. 2 _ _ 92CS-27118
ITSM :
For one full cycle of applied principal voltage, at current and JEOEC TO-220AB
temperature shown above for ITIRMS}: _ _ _ 100 _ _ __
60 Hz (sinusoidan TIC236 series A
_ _ _ 125 _ __
TlC246 series A
50 Hz (sinusoidan TIC236 series . _ _ _ 90 _ _· _ A
_ _ _"115 _ __
TIC246 series . A
For more than one cycle of applied principal voltage _ See Fig. 3and4_
di/dt
_ _ _ 100 _ _ _ A/,..s
Vo = VOAOM,Ir,T = 200 mA, tr = O.I,..s
'12t [AtTC shown for IT(AMSII : TIC238 Ser.. TIC248 s...
t=20ms. 55 85 A2•
2.5 ms 28 42 A2s
0.5 ms 16 25 A2•
IGTM- ___ 1 A
For 1 loIS max.
PGM (For 1 ,..s mex., IGTM <: 4 AI _ _ _ 16 w
_ _ _ 0-5 W
PG(AVI
T ltg _ _ -40 to 125 _ _ °c Fig. 1 - PrinciptJllIOlta~urrent characteristic.
TC _ _ -40 to 110 °c
TT
_ _ _ 130 °c
• For either polaritv of main terminal 2 voltage (V MT2 ) with reference to main terminal 1.
• For either polarity of gate voltage IV G) with reference to amin terminal 1.
~:~~YR~~~~~f~CY: 1I0180H, SINE YMVE ~:~L:YR~~~~~~:~Y: SO/60H, SINE WAVE

CASE TEMPERATURE ITcl-ro-C CASE TEMPERATURE (Tcl-70-C
~1toO ~SON-SiATi ,URREfiT [IT(RMS~·12A w .... ~ON-SIAi JRR!"T [ITfRMsiI-18A
E~ :~
~e8 ~~I II r-IOO '~I
~z
~f
, !'(,
r-- 40......,"-1' ~~ ----"'>"'f
--- "' ·0. . .
o~
za 60
WW
~~
1-'1-1 I ,t-...., I
~~ 15
WW
m~
------tI. . I I ,r--..,
!i~
:~40
~o
I I'
GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY -
FOLLOWING SURGE CURRENT INTERVAL.
20 OVERLOAD MAY NOT Bf REPEATED -
, J.
11"-:"::::- ::....
--
i
i
~~50
~~
~o
••
i ....
GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT INn RVAL.
OVERLOAD MAY NOT BE REPEATED
-- ~
. if.. ..
UNTIL JUNCTION TEMPERATURE. HAS UNTIL JUNCTION TEMPERATURE HAS
FULL CYCLE RMSONaSTATE CURRENT [IT(RMsij-A

o
2 ...
"ETi"·Ej i SrEjlN-yATE i'IEI~LUE -
10
2
100
SURGE CURRENT DURATION-FULL CYCLES 92CS-303$3
1000
o "ETi"·Ej i jEjlN-yATE i'IEI ~LUE
10
2
SURGE CURRENT DURATION-FUU CYCLES

100
4
1000
92CS'30334
HCS-30J52
Fig. 3 - Peak surge on-state current as a function Fig. 4 - Peak surge on-state current 8S a function
Fig. 2 - Maximum allowable ca... temperature as of surge current duration for TIC236 of ,urge current duration for TIC246
a function of on-state current. series. series.
___________________________________________________________________ 501
TRIACS __________________________________________________________________________
'TIC236, TIC246 (T6000) Series

At Maximum Ratings Unl_ Otherwise $pfIcifilld and at Indicated TemperatufflS
LIMITS
CHARACTERISTIC For All Types UNITS
Except 81 Specified
Min. Typ. Max.
IOROM·
TC: 110·C, VOROM : Max. rated value - - 5 mA
10
vTM· 4 6 e I 2 4 6.810
IC: 25·C, iT: 17A (peak) TIC236 series - - 2.1
V
TIME (II-rna 92CS~3osali
= 22.5A (peak) TIC246 series - - '1.7

Fig. 5 - Ptmk surge on-state current and fusing-
IHO· current as a function of time.
Gate open, Initial principal current: 150 mA (de),
vO:12V,TC:25·C - - 50
mA
IL·
IGT: I~T Max., tw: 20 #s, tr: tf" 15 ns, f: 1 kHz,
TC: 25 C - 20 -
dv/dt· (Commutating)
vO: VOROM, IT(RMS) : Max. rated value, TC: 70·C
di/dt: 6.4 Alms TIC236 series 4 10 -
: 8.5 Alms TIC246 series 4 10 - V/#5
dv/dt· (Off·State)
Vo : VOROM, TC : 100·C, Exponential voltage rise
TIC236 series 100 300 -
TIC246 series 75 250 -
IGT"
Mode VMT2 VG
vO: 12 V (de) 1+ + + - 15 50
RL: 30n 111- - - - 25 50
mA
TC:25"C 1- + - - 30 50
111+ - + - 75 -
VGT"
vO: 12 V (de). RL : 30 n, TC = 25'C - 1.2 2.5 V
tgt
vO: VOR2 M, IGT: 80 mA, tr: 0.1 #s, iT: 25 A (peak),
=
TC 25 C
- 1.6 2.5 #s
Thermal Characteristics
RSJC TIC236 series - - 2
'CIW
TIC246 series - - 1.9
RSJA - - 62.5 'CIW
- For either polarity of main terminal 2 voltage IVMT21 with reference to main terminal 1.
-For eithar polarity of gata voltaga IVGI with reference to main terminal 1.
502 _________________________________________________________________
____________________________________________________________________________________ TRIACS
T6400, T6401, T6410, T6411, T6420, T6421 Series

(Includes 2N5441-2N5446, 2N5806-2N5809)
Features:
25-A, 30-A and40-A Silicon Triacs • di/dt Capability = 100 AI~s
• Shorted-Emitter, Center-Gate Design
For General Purpose AC Power Switching Application
• Low Switching Losses
All 30·A and 40·A Triacs
For Control·Systems Application in Airborne and Ground Support Type Equipment Current Levels
25·A, 40D-Hz Triacs (2N5806·2N5809) • Low Thermal Resistance
Additional Features for the

2N5806·2N5809:
These RCA triacs are gate·controlled full· systems. They can also be used in air· • Available in JAN or JANTX
wave silicon ac switches. They are designed conditioning and photocopying equip· Screening
to switch from an off·state to an on·state ment. • Commutating dV/dt capability
Characterized at 400 Hz
for either polarity of applied voltage with Types 2N5441-43 and T6401 series em-
positive or negative gate triggering voltages. ploy a press·fit package. Types 2N5444- TERMINAL CONNECTIONS
These triacs are intended for control of ac 46, 2N5806·09, and T6411 series employ
loads in applications such as heating con· a stud package. T6421 series and T6421
trois, motor controls, arc·welding equip· series employ an isolated-stud package.
ment, light dimmers, and power switching
MTI
2N&441 2N&442 2N&443

4O-A 2N5441-43 T6401 series
f 2N6444 2N&44& 2N&446

For Operation with Sinusoidal SupplV Voltage at Frequencies
3D-A
I Tai20F
T8401F
T8411F
T6421F
T8420B T8420D
T8401B T8401D
T8411B T8411D
T6421B TII421D
T8420E
T6401E
T6411E
TII421E
T6420M
T8401M
T6411M
T8421E
Prsss·Fit Types
up to 501400 Hz lind with Rssistive or Inductive Load. 2N6S06 2N8807 2N11108 2N&809
Z5-A
-REPETITIVE PEAK QFF=·STATE VOLTAGE:- V OROM
Gate open. T J " -65 to l100C . . . . . . . . . . . . 50 200 400 600 ~OO v
AMS ON·STATE CURRENT (ConductIOn angle = 3600): 'rIRMS)
Case temperature
TC = 70 0 e (2N5441~43, -Press·flt types)
= 65°C (2N5444.46, -Stud types)
40------
40------
A
A
= sooe (T6420 series - Isolated-stud types) . A
= 65°C (T6401 series - Press·fit types) A
.. SOoC (T8411 series - Stud types)
= 55°C (T6421 series - Isolated-stud types). ,
E===== A
A
= SOoC (2N5B06·2NSB09 - Stud types) . 25===== A
For other condItions - - - - See Figs. 4, 6, 6
PEAK SURGE (NON·REPETITlVE) ON-STATE CURRENT:
For one cycle of applied principal voltage, T C as above
60 Hz (sinusoidal· 30·A & 40-A types) A 2N5444-46,
SO Hz (sinusoidal· 3().A & 40-A types) 265 A 2N5806-09, T6411 series
400 Hz (sinusoIdal - 2S-A types)
60 Hz (sinusoidal - 25·A types)
SO Hz !sinusoidal - 25-A types)
For more than once cycle of apphed principal voltage .
300======
370
200------
170------
A
A
A
Stud Types
----SeeFigs.7,8,9 - - - -
RATE OF CHANGE OF ON·STATE CURRENT'
. VDM=VDROM,IGT"'200mA,tr"'0.1}ls
FUSING CURRENT (For Tnac Protection):
------ 100------ Alps
(At T C shown for IT(RMS)I:
~ 250240500~
1'" 20 ms (30-A & 40·A types)
= 2.5 ms (30-A & 40-A types)
= 0.5 ms (30-A & 40-A types)
= 20 ms (25·A types)
145
= 2.5 ms (25-A types) 110
"'0.5 ms (25·A types) .... 65------
·PEAK GATE-TRIGGER CURRENT.·
A
For 1 ps mall., See Fig. 15 (30-A and 4O-A types only) .
"GATE POWER DISSIPATION-
PEAK (For lOlls mall., IGTM "'4 A, -30-A & 40-A types) PGM
"
40------ w T6420 series,
- 25-A types) PGM w T6421 series
AVERAGE 130-A & 40-A types)
125-A types, 1 '" 16.6 msl
PG(AV)
PGtAVI
10-=====
0.75
0.5
w
w Isolated·Stud Types
"TEMPERATURE RANGE:·
Storage (30-A 81 40-A types) -66 to 150
(25·A types) -55 to 125 - - - - -
Operating (Case) - 40-A types.
- 30·A types.
- 2S-A types.
·TERMINAL TEMPERATURE:
•6Stol00
-40 to 115
=====
-65t0110 - - - - -
fi
DUring soldering for 10 $ mall. (termmals and case)

WARNING: The ceramic of the isol.led stud package
30·A & 4D-A types -----~5------
25-A types
STUD TORQUE: T,
-----250------ contains beryllium oxide. Do not crush, grind, or
abrade this part because the dust resulting from such
~O~=-==
Recommended
~;;~: action may be hazardous if inhaled. Disposal should
Ma)(imum (DO NOT EXCEED)
==== 0.57
in·lb be by burial.
','·m '---'------------------'
" In accordance with JEDEC registration data format !JS·14, RDF 2) filed for the JEDEC (2N-8erie" types.
• For either polarity of main terminal 2 voltage (V MT2 ) with reference to main terminal 1.
• For either polarity of gate voltage IVaI with reference to matn terminal 1.
... For temperature measurement reference point, see Dimensional Outline.
503
TRIACS
16400, 16401, 16410, 16411,16420, 16421 Series
(Includes 2N5441-2N5446,2N5806-2N5809)
ELECTRICAL CHARACTERISTIcs. At M••lmum R.t",," 0 _ ,.. Spoc/fiod ond" IndiClltld eo.. Tempm;rure/T,;I
LIMITS
CHARACTERISTICS SYMBOL UNITS
MIN. TYP. MAX.
Peak Off·State Current:'
Gate open, VOROM • Max. rated value
TJ' II000C. (4()'A types) ........................ .. 0.2 4'
• l00"C. (30-A types) ..... . • • . . .. . .. .. . . . • . .. . . 10ROM 0.2 4 mA
• 115°C. (25·A types) ........................ .. 0.2 2'
Maximum On·Statt Voltage:'
For iT' 100 A (peak). TC' 26°C. 14O·A type,) ......••.•• 1.7 2
For iT' 68 A Ipaak). TC • 26°C. 14()'A types) . : •••..••..•. 1.6 1.86'
2.1 2.5
v
For iT' 100 A lpeak). TC - 26°C.I30-A type.) •••.•••••••
. • 36 A lpeak). pulse width < 1 mI.
duty cycle < 2%' IG = 150mA, TC' 25·C 126-Atypes). . 1_3 1.8'
FUlL-CYCLE RMI ON-ST"'TECURRIENT[IT(RMS~-A
DC Holding Current:' UI."!2!11N1
Gate open, Initial principal current· 500 mA (de), YO" 12V: Fig. 1 - PoWtlr dilsipation vs. on·ststs current
TC • 2S"C 130-A 81 4a.A types) .................. . 25 80 for 2N5441-46, and T6420 series.
- 25°C 125-A types) ........ _................ . 30 75
• _85°C 14()'A types) ..... _.................. . 100' mA
• -4O"C 126·A tYpe.) ........................ . 45 100·
For other Clse temperatures .••.•...••..•••....•...•• See F~. 13 & 14
Critical Rate of Rise of Commutation Voltage:'
vO • VOROM.ITIRMS)· 40 A. commutatihg
di/dt .. 22 Alms. gat. unenergized.
TC· 70"C 141l-A, Pr....flt tYpe.) _. _.. __ ....... _ . _.. 5' 30
• 86°C 14()'A, Stud-types) .................... . 6' 30
= 8O"C 140·A. lsolated·stud tYpes) •.•....•. _..•.. _ . 5' 30
vO - VOROM. ITIRMS) - 30 A. commutating dv/dt V1~.
dildt .. 16 Alms. gite unenergized.
TC' 86°C I30-A. Pr...·fit typesl. ••.••.. _ .••. _..•.... 20
= 8O"C (3().A. Stud tYpes) .... _................. . 20
.. 55°C, I30-A, lsolated·stud types I •......•.•.••.•.. 20
vo .. V DROM. IT( RMS) .. 25 A. commutating
di/dt .. 88 Alms, gate untn.rgized
TC· SO"C 126-A, Stud types.) .................... .
Critlca.1 Rate-gf·Rise of Off·State Voltage:'
Fig. 2 - Polllier disripation lIS. on·stats current
For vO • VDROM- exponential voltage ri.., gate open
TC -110"C 14()'A type.): for T6401, T6417, T6421 series.
2N6441. 2N5444. T84208 •.•....••....• _•... 50' 200
2N6442. 2N8445. T84200 " ............. _ ... . 30' 150
2N6443. 2N5448. T6420M .................. . 20' 100
dv/dt VIlA'
TC = l00"C 13()'A types):

T84018. T8411S. T84218 40 200
T84010. T8411 b. T84211i ,26 150
TCJ401M, T8411M. TB421M 20 100
TC • 115°C 126-A types) ....................... _ . 20 100
DC Gate-Trigger Current:'.
vo - 12 V (dc) RL = 300 TC = 26°C
Mode VMT2 Va
,+ positive positive' (4Q.A & 3O·A types) ...... . 16 60
125-A typos) .......... .. 20 80
111- negative negative (4o-A & 3()'A types) ...•... 20 50
125·A ,ypes) .......... . 60 80
1- positive negative (40-A 8t '3Q-A types) ....••. 30 80
125-A types) .......... . SO 80
111+ negative poSitive (4Q.A at 3()'A types)'..•.... 40 80
125-Atyp." .. _.. _..... 100 160 Fig. 3 - PoWtlr dissipation lIS. on-state current
mA for 2N5806-2N5809.
vO'12V Idc) RL -300 TC--86°C
Mode VMT2 VG
1+ positive positive ~ 125'
liI- negative 'negative 4()'A: : : : : : : : : : : : : 125'
,- positive negative ty~ ............• 240'
111+ negative positive on V ••••••••••••• 240'
.0' 12 V Idc) RL - 250 TC - 4O"C
Mode VMT2 VG
111-
,+ positive
negative
POSitive!
negative 25.A: : : : : : : : : : : : :
32 120
98 120
,- positive negative types ............ . 170
111+ n,egative positive only ••••.••• 0"' •••
DC Gate-Trigger Voltage:'.
'0 - 12 V Ide). RL' 300.
TC • 26°C I3a.A 81 4a.A types) ................ . 1.36 2.6
• -85°C 141l-A types only) ... _.............. . 1.8 3.4'
iF~·201
For other cas. temperaturn ..••.......•.•..•••..•.•• V
vo· VOROM. RL • 1260. TC = 11o'C (4()'A type.) - 0.2
-l00"C I3a.A .type.) 0.2
Fig. 4 - Maximum allowable case. tsmperature
VS. on-ststs current for 2N5441-46.
and 6420 series.
504
________________________________________________________________________________________ TRIACS
T6400, T6401, T6410, T6411, T6420, T6421 Series

(Includes 2N5441-2N5446, 2N5806-2N5809)
ELECTRICAL CHARACTERISTICS, At Maximum Ratings Otherwise Specified andat Indicated Case Temperature (TcJ CURRENT WAVEFORM! SINUSOIDAL
.~.
CONDUCTION ANGLE· 360·
LIMITS CASE TEMPERATURE'YEASURED
CHARACTERISTICS SYMBOL UNITS AS SHOWN ON DIMENSIONAl OUTLINES
MIN. TYP. MAX.
.COItIWC110f,1ANGlE
. "I+'m
DC Gate-Trigger Voltage: I.
vD = 12 V (del. RL = 2511 PRESS-FIT TYPES
Triggerit"lg Modes 1+, 111-, 1- (25-A types). TC '" 25°C 2.5
= --40°C. VGT 2.6 4" V STUD TYPES
Triggering Modes 111+ (25-A types). Te '" 25°C
vD= 12V (del. RL = 1 kn,
Triggering Modes 1+, IW, 1- (25-A types): TC=115 D C .. 0.15
ISOLATED-STUD TYPES
Gate-Controlled Turn-On Time:
\10 = VDROM. IGT '" 200 rnA, tr:: 0.1115. 10 20 30 "'0
iT = 60 A (peak). T C = 25°C (40-A types) 1.7 FULL CYCLE RMS ON-STATE CURRENT [ITIRMSI] -~SS-3812R2
vD '" VOROM. lGT '" 200 rnA. t r '" 0.1 JiS, tgt ~s Fig. 5 - Maximum allowable case temperature
iT = 45 A (peak), T C '" 2SoC (3l)·A types) . . . . . . . . . . .. 1.7
vs. on-state current for T6401, T641',
vD = VDROM' IGT = 150 rnA. tr = 0.1 JJ,s,
iT = 60 A (peak). Te = 2SoC (25·A types) 1.6 T6421 series.
Thermal Resistance. Junction-to-Case:
Steady·State
Press·fit types ....... O.S"
Stud types ......... ............ ROJC 0.9" ·C/W
~o.
Stud types !25·A types only) 1.23"
Isolated·stud types ....... ............ 1
Transient (Press·fit & stud types) See Fig. 24
Thermal Resistance, Junction·to·Ambient
SteadY'State (25·A types only) ............... ROJA 50'
.. In accordance With JEDEC registration data format !JS·14, RDF 2) field for the JEDEC (2N'Senes) types .
• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
• For either polarity of gate voltage (V G) with reference to main terminal 1.
10 20 50 "'0
FULL CYCLE RMS ON~STATE CURRENT [J:l1RMSil-A
~~~D:~N~~:~~E CURRENT [lTtRMSa-30A AT Fig. 6 - Maximum allowable case temperature

SP£CI'IED CASE TEMP.
L~ .,
vs. on-state current for 2N5806-
II 11111 11111 2N5809.
\. UTE COMTIIDI. MolY
DI,IIINGAND~I'aLLOWIt6
I[ LOST
'UII'IE CUftIIOIT fN7U\IAL.
Ii;i . OIlERLOAO MIlT NOT. IIe;PEATED

UN11..MCTIONTEMPf:RATUItE"AS
"', =lte:~NEeAl8e:S:UDY-STATE
15
~
.
r~ ~
I '" II '10 '" 6

e 10!!. a "''' ~cf . . .. . . .. . ...
10
SURGE CURRENT DURATION -FUU. CYCLES
10'
Fig_ 1 - Peak surge on-state current vs. surge Fig. 8 - Peak surge on-state current vs. surge
current duration for 2N5441-46, current duration for T6401, T64",
and T6420 series. T6421 series.
Fig. 9 - Peak surge on-state current vs. surge

current duration for 2N5806-2N5809.
1 I. 1
(VT)-V INSTANTANEOUS ON-STATE INSTANT~2W.vcrO\T~1~re-JtfE('T)-V
"'-'-ft..., (POSITIVE OR NEGATIVE) 925$-3aJ1
'2C$-a74""
Fig. 10 - On-state current vs. on-state voltage
for 2N544146, and T6420 series. Fig. 11 - On-state current vs. on-state voltage Fig. 12 - On-state current vs. on-state voltage
for T640 1, T64", T6421 series. for 2N5806-2N5809.
______________________________________________________________________ 505
TRIACS
T6400, T6401, T6410, T6411, T6420, T6421 Series

(Includes 2N5441-2N5446, 2N5806-2N5809)
lOO,tr.et.
4 4 I 4 • liD
DC GATE-TRIGH" CUIUtlENT UQTI-A

cal! TIMPt:RATUIIE fTc )-·C 1"1-1M47 IPOSITIVE OR NlGATIVEI
Fig. 13 - DC holding current vs. case tempera· Fig. 14 - DC holding current vs. case tempera- Fig_ 15 - Gate-trigger characteristics and limit-
ture for 2N5441·46, T6420. T6401. ture for 2N5806-2N5809 series. ing conditions for determination of
T6411. T6421 series. permi8Sable gate-trigger pulses for
2N5441-46. T6420. T6401. T6411.
T6421 series.
CASE T£WE:RATURE !TC1-"C 9ICS-III2Q1
82C11-lllItI Fig. 11 - DC gate-trigger current vs. case rern-
perature ,,+
Fig. 16 - DC gate-trigger current vs. case tem-
& 11/- modes} for
persrurs ,,- & 11/+ modes} for
2N5441-46. T6420. T6401, T641 1. un·2'.....
2N5441-46. T6420. T640f. T6411.
T6421 saries.
T6421 series.
perature & IIr modes) for
2N5806-2N5809.
,,+
Fig. 18 - DC gate-trigger current vs. case tem-
I
CASE TEMPERATURE (Tc1--<:
Fig. 20 - DC gate-trigger voltage VS. case tem-

Fig. 19 - DC gate-trigger current vs. case tem- 92CS-274S0
perature for 2N544 1-46. T6420. Fig. 21 - DC gate-trigger voltage vs. case tem-
perature " - mode} for 2N5806-
T6401. T6411. T6421 series. perature for 2N5806-2N5809.
2N5809.
.Iii
i 100 II
!!
~m
I ...... 80 II
~; II, V
.ffi
~~ 60
!
LA1 ; I
~B .-1 I
!;;,
Ije /" I 'I
.'
U
~
40
20
t--
I' I
I I
I II I
50 100 ISO zoo 250 500
DC GATE-TRIGGER CURRENT UOTI-mA
S!50 400 450
'I
lOS
.. I •
10 2
2
I II.
TIME AFT£R APPLICATION £IF RECTANGUlAR POWER PULSE-SECONDS
101
, I .
92LS-2M5R1
I
Fig. 22 - Turn-on time vs. gate-trigger current Fig. 24 - Transient junction-to-case thermal
for 2N5441-46, T6420. T6401. Fig. 23 - Typical turn-on time vs. gate-trigger resistance vs. time for pre8S-fit and
T6411. T6421 series. current for 2N5806-2N5809. stud types.
506 __________________~--------------------------------------------
_____________________________________________________________________________________________ TRIACS
T6404, T6405, T6414, T6415 Series

400-Hz, 25 & 40-A Silicon Triacs Features:
• RMS On-State Current -
For Control-Systems Application in Airborne and Ground-Support Type Equipment IT(RMSI- 25A: T6405 and T6415 Sari..
- 4OA: T6404 and T6414 Sari..
These RCA triacs are gate-controlled full-wave silicon ae 208 V RMS sine wave and repetitive peak off-state voltages • Commutating dv/dt Capability Characterized at 400 Hz
Mitches. They are designed to switch from an off-state to an of 200 V and 400 V. • Shorted-Emitter Center-Gate Design
on-state for either polarity of applied voltage with positive These triaes exhibit commutating voltage (dv/dtl capability • di/dt Capability - 100 A/~.
or negative gate triggering voltages. at high commutating current (dildt). They can also be used
They are intended for operation at 400 Hz with resistive in 6O·Hz applications where high commutating capability TERMINAL CONNECTIONS
or inductive loads and nominal line voltages of 115 and is required.
T6404B T6404D T6404E
MAXIMUM RATINGS. AbsoJur.·Maltimum ValUfJS: T6405B T6405D T6405E
FOI' ap.r.tion wirh Sinu$Oidtl'Supply Volt"ga lit 400 Hz and with R/ls;st;ve or Inducrivtl L08d. T6414B T6414D
REPETITIVE PEAK OFF-sTATE VOLTAGE:- lOTI
VOROM T6415B T6415D
Gete open, TJ '" -60 to 1H)0 C ................ . -200 400 500 v
RMS ON-sTATE CURRENT (Conduction Angle'" 36(0): IT(RMSI
ea. temperature
T C .. 85 0 C (T6405 Series) ............•.... ---25--- A
8()0 C (T6415 Series)
1()0 C 1T&404 Series) ......•......
---25--- A
---40--- A
660 C (T6414 Series) ............... . ---40--- A
For other condi1ions ........•.......... - - S e e Fig.2--
PEAK SURGE (NON-REPETITIVE) ON-5TATE CURRENT: ITSM T6404 Series
For one cycle of applied principal vol1age, Tells above T6405 Series
400 Hz IlinulOidliU ...•........••.................. , .,., •.. ,' .... , .. , .. ' ---800--- A
Press.fit
80 Hz (sinulIQidll) ..••....•.•... , ....•..• , •...... " •..•........• , .. , ... ---300--- A
50 Hz (sinusoidal) •.•...••.•..... , •..• , ••.•........•. , .. , .. , ---265--- A
For more than one cvcle of applied principel voltage - - S e e Fig. 3 - -
RATE.()F-CHANGE OF ON-sTATE CURRENT: di/dt
VOM .. VOROM.IGT .. 200 rnA, t f • 0.1 JjS ---100--- A/IlS
FUSING CURRENT (for TrillC Pr01ection):
TJ"-60tol100C.t"-1.25to10 ms ........•.
I', _ _ _ 210 _ _ _
A's
PEAK GATE·TRIGGER CURRENT:8
For 1 ~ max. (s.. Fig. 7) ..... , ... , ...••.•....... ---12--- A
Peek (For 10"lmax .• IGTM ;:5;4 A (peak). (SIN Fif1, 1) . PaM ---42--- W
Av.age .............. • ............ . PGIAV) ---0.75--- W
TEMPERATURE RANGE:'"
Storage .................... ' .............. , ........ , .. , .. , T st• - - -50 to 1 5 0 - - OC
Operating (ea.) •••••••..••••••....•..... , •. , .. , ......•••.••.. TC ---50rol10-- OC
TERMINAL TEMPERATURE IDuringsolderlngl: TT
For 10 s max. hermlnalsand casel •••.............•..•...•...... ---225--- DC
STUO TOFtUU~:
T6414Serie..
Recommended.•.••.•••••••.• , . . . . • • . . . . . . . • • • • . . • . • . • • . • . . • • . . . . . • . . . 1's 36 In.-Ib
T6415 Serjes
Maximum (00 NOT EXCEED) ••..••••..••.•.•......•....•..•.....•..••.• 50 in.·lb
- For .,th_ polarity of main urmlnel 2 volta. IVMT2) with referenClto main .,minal 1 .
• For 81th.. pol.-Ity of . . . volta. . CVG) with reter.,,:e tomein termlnelt .
Stud
.... For . menurement reference point. _ Dimensional Outline.

CURRENT WAVEFORM: SINUSOIDAL LOAO:RESISTIVEI
CONDUCTION ANGLE • !&o·
CASE TEMPERATURE: MEASURED AS
t-~OWN ON DIUENSIONA\.. OUTLINES. ~ 600
AMS ON'STATE CURRENT [ITIRNS'} RATED VALUE AT
SPECIFIED C,t,SE TEMPEA,t,TUAE
1
110 GATE CONTROl. fIIlA'!' BE LOST
Fc: 500 DURING AND IMMEDIATELY fOLLOWING
SURGE CURRENT INTERVAL.
407'7,407'8
40791.40792
40193,40794
li·~i'oooo ~
"\
UNTIL JUNCTION TEMPERATURE HAS
RETURNED TO STEADY-STATE
RATED VALUE,
,
401'89.40 790
" ~ .oo~
r-<-+-+ 1 rroo ~
I:: 100
r-
... , ...
SOH,
r
. ..
60
o 10 20 30 40
FULL-CYCLE RMS ON-STATECURRENT{ITIRMSI]-A

FULL CYCLE RMS ON-STATE CURRENT [I,.!RMS~~$~1794' 0
, ,
10 10' 10'
SURGE CURRENT DURATION -FlA.L ,CYClES
Fig_ 2-Maximum allowable case tempera- Fifl- 3-Peak surge on-state current vs.
Fifl- 1-Power dissipation vs_ on-state current_ ture vS. on-state current. surge current duration_
IOO'~~k ~¥r::l!Jt~~~,iF' or IPULSE OUR"TION
..
i 1_1~~~r)V
~'t.iJ, ~~.•
LIMIT
i~i" .
W10 h;t'~ pot, f---' 'J
'. FS.
~~
-g ' ~ ~~
, 711
~Ela I ( .-~ ,iI~~.t
i~ ~:' GATE A~ $'-"'>t MAX. REP, RATE
4 PULSES I S
MINIMUM RESISTANCE
l! r ~PER
I I 1 I
O~
I I
II
. .. . ., . ..I
LIMIT PERMISSIBLE
AVERAGE (DC) GATE POWER f
0.1
0.1 1
,
DISSIPATION AT RATED CONDITIONS
, 10
,
INSTANTANEOUS ON-STATE VOLTAGE '''T)-V DC GATE-TRIGGER CURRENT tlGTI-A
(POSITIVE OR N£eATIVE) I12tS· 179111 IPOSITIVE OR NEGATIVE I
Fig_ 6-Gate-trigger characteristics and

.limiting conditions for determina-
Fig_ 4-0n-state current vs. on-state voltage_ Fig. 5-0C holding current vs_ case temperature_ tion of permissible gate-trigger pulses_
____________________________________________________________________ 507
TRIACS
T6404, T6405, T6414, T6415 Series

At Maxl",um Rotinlllind otlndl_ Co. Te_ralTcl Unle.. Otherwl.. Specified
CHARACTERISTIC SYMBOL l-;:o,::--fL;.;IME:IT..;;S. .

Min. Typ. Max.
o::::-t UNITS
Peek Off·Stlle Current:'

Gate open. TJ = llooC. VOROM = Max. rated value ...•........... IOROM 0.2 mA
Maximum On-State Voltage:'
For iT =100 A Ipeokl. TC = 250 C: v
T6405 & T6416 Series ... . . _ ......................... . 1.7 2.5
T6404 & T6414 Series ..... .- ............................... . 1.7
DC Holding Current:'
Gate open, Initial principal current'" 600 rnA (DC), yo = 12 V. ·50 -40 -30 -20 -10 0 10 20 30 40
TC = 250 C . , , ..... , ....... ,. , ..•...•_ , ... ,. , .' .... , , .' . 30 90 CASE TEMPERATURE ITCI-"C
mA
For other case temperatures .............................. . See Fig. 6
Fig. 7-DC gate· trigger current vs. case
Critical Rate-of-Rise of Commutation Voltage:' temperature (1+ and 111- 7Iodes).
For yo = VOROM,IT(RMS) = rated value. gate onenergized,
Commutating dildt = 88 Alms

TC = BSO C IT6405Series) ,., .. " .. ,." .... ,. ,' .... ".,' dv/dt Vips
-SOOC IT6415Series) ,.,,", .. ,., ', .... " , .... , .. ,.
Commutatingdi/dt = 141 Alms
TC = 700 C IT6404 Series) , .. "., .. " .... ,., .... ,',.". 2
= 650 C IT6414Series) , .. " ... ,', .... , •.... ,""',. 2
Critical Rate-of·Rise of Off·State Voltage:'
For yo = VOROM, exponential voltage rise, gate open, TC = 1100 C: dv/dt Vips
T6405 & T6415 Series, , , , , , , , , , , , , . , ... ,. , ... ,. , , ... , ... , 30 150
T6404&T6414Seri.. , ' , " " " " , . , ' ... ,., ... ,.,' ..... ,., 50 200
DC Gate-Trigger Current:1t Mode VMT2 VG
For yo = 12V lOCI. 1+ positive positive 20 60
RL =30n. 111- negative negative IGT 50 80 mA
TC =25OC 1- positive negative 60 120
111+ posit!ve
negative 80 120
For other case temperatures ................................. . See Figs, 7&8 Fig. 8-DC gate· trigger current vs. case
DC Gate-Trigger Voltage:lt temperature (1- and 111+ modes).
For vo = 12 VIOCI, RL = 30 n, TC = 250 C. ,. , , , ... , ., ., . ,. , , , .,
For other case temperatures .....•..........................
-I See
2 I
Fig.,~
V
For vO' VOROM, RL = 125 n, TC = 1100 C .. ,., ...• ,., ..... , .. 0,2
Gate-Controlled Turn-On Time:
For vo = VOROM, IGT • 150 mA, t, = O.lps, tgt
iT -60A lpeokl, TC' 250C I See Fig. 101, 1.6 2.5
Thermal Resistance, Junction·to-Case:
Steody·S...e
Press·fit types ,.,.", ... ,"', ... ," .. ,.," ... ,.,.,',.,.,. 0,8
oC/W
•
Stud ., .... ,",., ........ , .... ".,.,.,', .... ,., ....... ,
T~nsient (Press-fit &: stud types) ......................•........
Foretther polarity 0' mam termtnal2 wattage IVMT2) WIth reference 10 mam terminal 1.
0.9
See Fig .. 12 ! lim··
t For either poIlr.ty of gate voltagelVG) With re'erenc.:e to mam temunal1. ~ ,
-50 40 ·30 -20 -10 0 10 20 30 40
CASE TEMPERATURE ITc I-·C
Fig. 9-DC gate· trigger voltage vs. case

temperature.
~ cl
I
I~o 80
V
~~ 60
~~
'~e' "
T'lPICAL. .'
n r--
~
40
20
~ ~ ~ ~ ~ ~
DC GATE-"'IGGER CtJRA£NT I1 GT '-,""
~ ~ ~
~
~5
, 4
~2
,
TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE~sa::s
01
.. I
t2CS·I."....
Fig. 10- Turn·on time vs. gate· trigger current. Fig. 1 1-Commutating voltage vs. Fig. 12- Transient junction·to-case thermal
commutating current. resistance vs. time.
508
TRIACS
T8411, T8421 Series

eO-A Silicon Triacs Features:
• di/dt Capability'" 300 A/iJ.s
Stud and Isolated-Stud "Overmolded" Packages • Shorted-Emitter Center-Gate Design
For General Purpose AC Power Switching • Low Switching Losses
The RCA-T8411 and T8421 series triacs trois, mutor controls, arc-welding equip- Current Levels
are gate-controlled full-wave silicon ac ment, light dimmers, and power switching • 2.5 kV RMS Isolation (Isolated-
switches. They are designed to switch systems. They can also be used in aircon- Stud Types)
from an off-state to an on-state for ditioning and photocopying equipment.
either polarity of applied voltage with TERMINAL CONNECTIONS
positive or negative·gate-triggering volt-

The T8411 series employ a stud "over-
ages. The T8411 and T8421 series are
molded" package. The T8421 series em-
60-A triacs.
ploy an isolated-stud "overmolded" pack·
These triacs are intended for control of ac age.
loads in applications such as heating con-

For Operation with Sinusoidal Supply Voltage at FrtlQuencies 18411F TMllB TM11D' TM11M Ta411E
Up to 50/60 Hz and with Resistive or Inductive Load. 18421F 18421B T8421D T8421M 18421E
V OROM·:
T8411 Series
Gale open. T J = -4010 l100C 50 200 400 600 500 v Stud "overmolded" types
'TIRM!?I 18 = 30001:
T C • BOOC (T8411 •• rl81 - Stud type.) 60 A
.. 75°C (T8421 serl .. - Isolated-8tud type ..' . ---- 60 A
For other conditions Se.Fig_ 2 - -
'r5M:
For one cycle 01 applied principal voltage
60 Hz (Slnusoldall, 'TIRMS) and Teas above for T8411, 21 senes - - - - 700 ---- A
50 Hz Ismusoldall.ITIRMS) and TC a5 above lOr 18411, 21 senes. - - - - 600 - - - - A
For morl! than one cycle of applied prlnClpa' voltage See Fig•. 3 - - -
dl/dt:
V OM = VOROM,IGT = 300mA, Ir = 0.1 IJ,s - - - - 300 A/Ill
,2 t : [At TC shown for 'TIRMS)I:
1 = 20ms
T841', T8421 seru~s 2700
1= 2.5 ms
1841" T8421 senes 1350
t = O.Sms
T841', T8421 senes 800 T8421 Series
'GTM-: Isolated-8tud "overmolded" types
For 10~s mall. (See Fig. 61. 7 ---- A
-====
PGM :
Peak (For 10,",s mall., 'GTM" 7 A lpeakl, ISee Fig. 61 w
PG(AVI • - 0.75
.2 w
T stg -40f0150 --- "c
TC -40 to 110 --- ·c
TT-:
Durtng soldenng for 10 ms mall Imum herminals and easel 225 ·c WARNING: The ceramic of the isolated
1s: stud package contains beryllium oxide.
Recommended 125 in·lb
1.44 kgf-m
Do not crush, grind, or abrade this part
Maximum 100 NOT EXCEEDI 150 In-Ib because the dust resulting from such
1.73 ..,-on action may be hazardous if inhaled .
Disposal should be by burial .
.. For either polarltv of main terminal 2 voltage IVMT21 with reference to main terminal 1.
-For either polarity of gate vollage IVG' with reference to main terminall.
- FOr temperature measurement reference point, &ee Dimensional Outline.
CURR€NT WAVEFORM: SINUSOIDAL CURRENT WAV1FORM: SINUSOIDAL

: lOAO: RESISTIVE OR INDUCTIVE LOAD: AlESISTIVE OR INDUCTIVE
: CONDUCTION ANGLE(f'·"O· CONDUCTION ANGLE • 360·
CAS( TEMPERATURE: M£ASURED AS
StUMN ON DIMENSIONAL OUTLINES
l' ti:
:J
-I ~ 100 ~~~D~::;~~~t~~RRENT [I TIRMst}60A AT

COliOUCTI(lNANGU
"E ~'m
I o SPECIFIED CASE TEMPERATURE
10 4 6 B 102 2 4 6 B 103
20 40 .60
FULL-CYCLE RMS ON-STATE CURRENT [ITlRMSU-A SURGE CURfiENT DURATION-FULL CYCLES
92CS-22762RI
Fig. 1 - Power dissipation vs. on-state current Fig. 2 - Maximum allowable case tempera- Fig. 3 - Peak surge on-state current vs. surge
for T8411 ant:! T8421 series. ture vs. on-state current for T8411 current duration for T8411 and
and T8421 series. T8421 series.
509
TRIACS ________________________________________________________________________________________
T8411" T8421 Series

ELECTAICAL CHARACTERISTICS. At Maximum Ratings Unless Othllrwire Specified and at Indicated esse Temperature (TCJ
LIMITS
CHARACTERISTIC
FOR ALL TYPES UNITS
Except a. Specified
Min. Typ. Mllx.
IDROM·;
Gate open, TJ" 11ooC. VOROM = Max. rated value 0,4 mA
VTM.A.:
iT'" 200 A (peak), T C '" 25°C 1.75 v
iT = 100 A (peak), T C = 25°C .............. . 1.66 1.B
IHO·;
Gate open, Initial principal current = 500 mAldel'YD'" 12 V
Te = 25°C 40 60
mA
For :~h:~:;se temperatures ....... See Fig:
86
'5 . INSTANTANEOUS ON-STATE VOLTAGE (vT)-V
dv/dt (Commutating'·: (POSITIVE OR NEGATIVE)
92CS-221'63
110 = VOROM. ITIRMS) '" 60 A. commutating di/dt '" 32 Alms, gate unenergized
Te '" SOOC (Stud types - T8411 series) ................. . 10 V/,."s
'" 75°C (Isolated-stud types - T8421 series) . . . . . . . . . . . . . . . 10 Fig. 4 - On-state current vs. on-state voltage
dv/dt (Off·State'''': for T8411 and T8421 series.
110'" VOROM. exponential voltage rise, gate open. TC = 110°C:
T84118, T84218 , .... , , , , ... 50 200
T8411O, T8421 0 30 150 VIlAS
T8411M, T8421M 20 100
'GT"" ,
liD = 12 V dc, Rl = 30n, Te = 25°C
Mode VMT2 VG
1+ positive positive 20 75
111- negative negative 40 75
positive negative 40 160
negative positive 100 160
vo = 12 V dc, RL = 30n. Te '" --4()OC mA
Mode VMT2 VG
1+ positive positive 35 160
111- negative negative 80 160
1- positive negative 100 400
111+ negative positive 280 400
For other case temperatures See Figs. 1 & 8
VGT"·:
~~r=o~e~ !~ ~:m=:'~'r!e = 25°e ,. See 'Fig: '9 . 1.35 2.5 v
t91: vo - VOROM. IGT - 300 rnA. tr - O. :!!' ~~ ~~:~) (T8411. T8421 series)
1.2 2. 5 .s
ROJC'
Steady-State Fig. 5 - DC holding current vs. case temperature
Stud types 0.35 for T8411 and T8421 series.
Isolated-stud types 0.4
·c
Transient See Fig, 71
.. For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1,
• For either polarity of gate voltage (V G) with reference to main terminal ,_
• For temperature measurement reference point. see Dimensional Outline.
PULSE DURATION
'l---t-+-t-f+----1-+-I4 UMIT
<2 468
'" I Kl
DC GATE-TRIGGDI Cl.l'tAENT IIGTI-A
IPOSITIVE OR NEGATlV£)
Fig. 6 - Gate-trigger characteristics and limiting

conditions for determination of Fig_ 7 - DC gate-trigger current vs_ case tem- Fig. 8 - DC gate-trigger current vs. case tem-
permissible gate-trigger pulses perature (1+ and 111- modes) for perature (1- and 111+ modes) for
for T8411 and T8421_ T8411 and T8421 series_ T8411 and T8421 series.
510
TRIACS
18411, 18421 Series

1111
1
~
U
'00
.0
II
J
: Ii
I V
V'
10
l/"! .
~w
V
!i~
.
~~ 40
~~
'
I""""
/
,I
,."
i 20
1
10 3 • .. . ..
10 2
i
1O~1
·1·"
11111
I
TIM!: AFTER APPUCATION OF RECTANGULAR POWER PUlSE-SECONDS
. j
92LS-2263RI
Fig. 11 - Transient junction·to-case thermal

Fig. 9 - DC gate-trigger voltage vs. case tem· Fig. 10 - Turn-on time vs. gate·trigger current resistance vs. time for T8411 and
perature for T8411 and T8421 series. for T8411 and T8421 series. T8421 series.
511
TRIACS __________________----------____________________________________________________________
Zero-Voltage-Switched Types
2.5-40 A, 100-600 V Silicon Triacs for Use With Ie
Zero-Voltage Switches RATINGS AND CHARACTERISTICS
For Power-Control and Switching' Applications All types, at case temperature (Te) = 250 e, 1+ and 111+ triggering modes:"
IGT = 45 mA max., VGT = 1.5 V max.
at 50-60 Hz with RCA-CA3058,
CA3059, or CA3079 IC as Trigger Circuits Rep. Peak RMS On-State Typ. DC For
Off-State Current Holding additional
Type Current at data, see
Voltage IT(RMS) Package Basic
The triacs Iisted below are gate-controlled No. at Case Temp. 250C,IHO
Vge?M Famil"
full-wave ac switches intended for load- (A) (OC) (mA) Types
control appl ications. They are especially
useful in ae circuits for heating controls T2306A 100 2.5 70 6
(proportional or on·off), lamp switching, T2306B 200 2.5 70 6 Mod. TO·5 T2300
motor switching, and a wide variety of T2306D 400 2.5 70 6
other power·control appl ications. T2316A 100 2.5 70 6
T2316B 200 2.5 70 6 Mod. TO·5 on
These devices 'have gate characteristics which Heat Radiator T2310
assure that an RCA·CA3058, CA3059, or T2316D 400 2.5 70 6
CA3079 integrated circuit can supply suf- T2506B 200 6 80 15
T2506D, 400 6 80 15 TO·220AB T2500
ficient drive current to trigger them over
their full operating-temperature range (-400 C T2706B 200 '6 75 15
to +85 0 C). T2706D 400 6 75 15 TO-66 T2700
The RCA-CA3058, CA3059, and CA3079 T2716B 200 6 75 15 TO·66 with
are monolithic silicon integrated-circuit zero- T2716D 400 6 75 15 Heat Radiator T2710
voltage switches which can operate directly T2806B 200 8 80 15
from the ac line. They are designed to drive T2806C 300 8 80 15
the triac gate directly and provide the gating TO·220AB T2800
T2806D 400 8 80 15
signal at zero·voltage crossings for minimum T2806M 600 8 80 15
radio·frequency interference.
T2856B 200 8 75 15 Isolated·Tab
These triacs have rms on·state current ratings T2856C 300 8 75 15 T2850
that range from 2.5 to 40 amperes, and 400 8 75 15 TO-220AB
repetitive off·state voltage ratings from 100 T2856D
to 600 volts. They are supplied in a variety T4106B 200 15 80 20
of packages. T4106D 400 15 80 20 Press·fit T4100
T4106M 600 15 80 20
T4107B 200 10 85 15
T4107D 400 10 85 15 Press·fit T4101
T4107M 600 10 85 15
T4116B 200 15 80 20
T4116D 400 15 80 20 Stud T4110
T4116M 600 15 80 20
T4117B 200 10 85 15
T4117D 400 10 85 15 Stud T4111
T4117M 600 10 85 15
T4126B 200 15 75 20
400 15 75 20 Isolated T4120
T4126D
T4126M 600 15 75 20 Stud
T41278 200 10 85 15
Isolated T4121
T4127D 400 10 85 15
15 Stud
Technical information on RCA·CA3058, CA3059, T4127M 600 10 85
and CA3079 is coetained in bulletin File No. 490.
T6406B 200 40 70 45
For detailed application information, see Appli- Press·fit T6404
<:8tion Note ICAN-6182, "Features and Application T6406D 400 40 70 45
of RCA I ntegr,ated-Circuit Zero-Voltage Switches". T6406E 500 40 70 45
T6406M 600 40 70 45
T6407B 200 30 65 25
T6407D 400 30 65 25 Press·fit
T6401
T6407E 500 30 65 25
T6407M 600 30 65 25
WARNING: The ceramic of the isolated stud package T6426B 200 40 60 25
T6426D 400 40 60 25 Isolated
contains beryllium oxide. Do not crush, grind, or
Stud T6420
abrade this part because the dust resulting from such T6426M 600 40 60 25
action may be hazardous if inhaled. Disposal should T6427B 200 30 55 25
be by burial. 400 30 55 25 Isolated
T6427 0 T6420
T6427M 600 30 55 25 Stud
... A triac driven directly from the output terminal ~ the CA3058, CA3059. or CA3079 should be
characterized for operation in the 1+ or 111+ triggeri~ mode, i.e., with positive gate current (cur-
rent flow. into the gate for both polarities of the appli'e\l ac voltage).
• Except for gate characteristics, data for basic family types also apply to the types listed in
this chart.
512
Silicon Controlled
Rectifiers (SCR's)
Technical Data
_ _ _ _ _ _ _ _ _ _ _ _ _ 513
SILICON CONTROLLED RECTIFIERS
C106, C107, C108 Series

4-A Sensitive-Gate Silicon Controlled Rectifiers
For Power-Switching and Control Applications
The RCA-Cl06,Cl 07, and Cl 08 series ofsen- These SCR's have microampere gate-current Features:
sitive-gate silicon controlled rectifiers are de- requirements which permit operation with
signed for switching ac and dc currents. These • Microampere gate sensitivity
low-level logic circuits. They can be used for
SCR's are divided into the three different lighting, power-switching, and motor·speed • 600-V capability
series according to gate sensitivity. The types controls, and for gate·current amplification • 5-A (rms) on-state current ratings
within each series differ in their voltage rat- for driving larger SCR's. • 30-A peak surge capabil ity
ings; the voltage ratings are identified by All types in each series utilize the JEDEC-TO- • Glass-passivated chip for stability
suffix letters in the type designations. 202AB (RCA VERSATAB) plastic package, • Low thermal resistances
• Surge capability curve
Cl06V Cl06A Cl06C Cl06E • Package and formed-lead options available
Cl07V Cl07A Cl07C Cl07E
1 I I I I
TERM 4
MAXIMUM RATINGS, Absolute·Maximum Values: Cl0SV Cl0SA Cl0SC C.l08E
'~--,
V RSXM :
RGK = 1000 ll, Te" ·-40 to 110 0 e
V OSXM :
C160Q Cl06F Cl06B Cl060 Cl06M
Cl07Q Cl07F Cl07B Cl070 Cl07M
Cl08Q Cl08F Cl0SB Cl0BO Cl0BM
25 50 75 125 250400 500600 700 v
ANODE RtF ~I----t-"':::;;=!P:-:_;:==:::::DE
RGK 01000 It, Te" ·40 to llO o e
TOP VIEW (fr
RRXM
V RGK :" 1000 ll, Teo ·-40 to 110 0 e
VO~~~= 1000 I , Te = .-40 to 110 0 e :.::

1 15 £~::O
100 200 300 400500 600
Cl07 Cl0B
v
TERM
JEDEC TD-202AB
:3 2
92CS- 29320
1
Series Series
ITIAV)IT e = 45 0 e, Ii = 180°1 . . . . .. .. ... ... . 2.2 2 3.3 A
ITIRMS) (T e = 45°C, 1/ = 180°). . . 3.5 3.14 5 A
ITlDe) IT e = 700 e) , . '.' . .. .. 2.6 2.4 4 A
I TSM :
For one cycte of applied principal voltage, TC = 45°C
60 Hz (sinusoidal) 20 15 30 A
50 Hz (sinusoidal) 18.5 14 28 A
For more than one cycle of applied pr'i'hcipal voltage .... See Fig. 11
IGM It = 10 ~s) 0.2 A
VGRM · . 6 V
di/dt:
VOM=VOROM' IGT = 1 mAo tr = 0.5 ~s, TC = 1100 e 100 ------A/~s
12 t [At Te shown for ITIRMS)i:

t = 10ms .. , ............•...... ,., .... 1.77 1 4
1Cl O~180'
CONOUCTICt.i
ANGLE,9
8.33 ms ............ . 1.67 0.94 3.75
1 ms ............. . 0.82 0.46 1.85 I 2 3 4 5
AVERAGE OR DC ON -STATE CURRENT [IT(AV) OR IT(OC)J-A
PGM IFor 10 ~s max.1 .. . 0.5
, 1,;7 ' 3:14 ' 411 ' 6.'28 7.$5
PG(AVl (Averaging time = 10 ms max.) 0.1 !
RMS ON-STATE CURRENT [InRMSI]-A

Tstg .... . ........ . -40 to +150 92CS-2920~
Te··· ......... . -40 to +110 Fig. 1 -. Power dissipation as 8 function of average

T T (During soldering for 105 max. 250 dc, or fmB on-state current for C106 series.
CURRENT w~~~o;:I~~~;~"tL
gEh~~:AA~~~'~;~~~~E'. ~!.
I
. '"OWN ON ,
~O~180·
CONDUCTION
~
ANGLE,lI
~( o t----r-'180·
II 2
AVERAGE ON-STATE CURRENT [IT{AV)l-A
• DCI]-A
I
CONOUCTICiN
AV£RAG£ OR DC ON -STAT£ CURR£NT (IT{AVI OR IT{OC)J -A .

ANGLE,S
~ 1.~1 3.\4 4.71 6.~B 7.Be

1.~7 ' 3:14 ! 4.~t 1 De ' 7.&5 92eS-29205
ftMS ON - STAT£ CURRENT (IT{RMS)]-A
RMS ON-BTATECURRENT (IT{RMS)]-A
92e9-2920",
Fig. 2 - Maximum allowable case temperature 8S a Fig. 3 - Maximum allowable case temperature as a Fig. 4 - Power dissipation as a function of.
function of average or rms on-state current function of de Dn~state current for C106 allflrage; dc, or rms on·state current
for CI06 series, series. for C107 series.
514 _________________________________________________________________
C106, C107, C108 Series

~~:~~~~::~~~:I:b~~~~O:L
I CONDUCTION ANGLE\')-180·
LIMITS CASE TEMPERATURE MEASURED AS
I
FOR ALL TYPES
UNLESS
CHARACTERISTIC OTHERWISE UNITS
SPECIFIED : ee
1Ci
°c~~:W
Min. Typ. Max. !" ~ ANGI..E,S
IORXM or IRRXM: i 4C
TY!'!'. ,c\
VO=VORXM or VR =VRRXM. RGK = 1000 n
TC=250C.
TC= 110°C
-
-
0.1
10
10
100
IlA
II AVERAGE ON -STATE CURRENT [ITCAV1) -
4
A
"T: 1.57 3.14 471 628

RMS ON-STATE CURRENt [InRMS)]-A
785
Cl06Series - 1.25 2.2

For iT = 4 A and TC = 25°C (See Fig. 13)
Cl07 Series - - 2.5 V
Fig. 5 - Maximum allowable case temperature as a
ForiT=5AandTc=25 0 C (See Fig. 13) Cl0B Series - - 1.35
function of average or rms on-state current
for C107 series.
iHX:
RGK=1000 n. VO=12 V,IT(INITIAL)=50 mA, TC=250C:
All Series - 1.7 3 mA
ILX:
RGK = 1000 n, Vo = 12 V, TC = 25°C:
Cl06, Cl0B Series (lGT = 200 IlA) . - 1.B 4
mA
Cl07 Series (IGT = 500 IlA) - - 4
dv/dt:
DC OPE.AT","
VO=VORXM, RGK=1000n, Exponential rise, TC=1100C - B - V/lls
IGT:
VO=12 V dc, RL =30 n, TC=25 0 C:
Cl06, Cl0BSeries
Cl07 Series
-
-
30
-
200
500 IlA
I,
I~
For other case temperatures. See Figs. lB,19
VGT:
Vo = 12 V dc, RL = 30 n, TC= 25 0 C - I 0.5 IO.B V
For other case temperatures.
tgt:
See Fig. 20
I ~" ~~
CL'~..
,
~
I Z~
Vo =VORXM, iT = 1 A, RGK = 1000 n, DC ON -STATE CURRENT [ITCDCIJ-A
IGT = 1 mA, Rise Time=O.l Ils, TC = 25°C. - 1.7 2.5 IlS
tq:
VO=VORXM, iT= 1 A, RGK = 1000 n, Fig. 6 - Maximum allowable case temperature as
Pulse Duration = 50 Ils, dv/dt = 5 V IllS, a function of dc on·state current for Ct07
di/dt = -10 AIIlS, IGT = 1 mA at turn·on, TC = 110°C - 30 100 IlS series.
ROJC' - - B
°CIW
ROJA. - - 60
~ AV'OAG' Q: DC ON - STAT' CURRENr:[IT{AVI O~A , I

DC ON -STATE CURRENT [ITCDCI]-A
o l:iT 3.14 ti.i!!:tI "(,80
RMS ON - STATE CURRENT [IT(RMSI]-A
92CS·29209
Fig. 7- Powtlf dissipation as a function of Fig. 8 - Maximum allowable case temperature as a Fig. 9- Maximum allowable case temperature as a
average, dc, Dr fms on-state current function of average or rrns on-state current function of dc on-staUl current for CtOS
for CI08 serieL for C108 series. series.
515
SILICON CONTROLLED RECTIFIERS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
C106, C107, C108 Series
-- .';
1==-.;'"~,"&::~Nr'v&..=tiNDN-RI::PI::TITIV I: 1008
I~ ! 'N 01011 ~
~"(I,·J-;fI~j~>
PULSE,IO,.. DURATION
~.IIIIA SQUAItE i-- 6
E ' S
Sf TEWEMJIJR! (TeI-Zs-(
UfilSAFE-JEA
i 4
j' "'".lES :--::.
Ii • ~~I"---...
or: ! ,
= OPEJIATlON ~
w.
~I~ Jcf~'-- T ~
~ ........ III
2
~. !-:c
~~I08 ,~~
~\'" •K
o""'.L
= SN',!..i/ ..n~"., • tEe
I L°<l! "'~'''i
~H
........ •
~
)-' ~- a
I~
1\-'=E
OfOPfAATION
. l~ir"1
4
I
4 4
j . CURftENT : ! I ! ,
ll! z J
~
.. , ..
II ... III
• ....L
~
, -iu..""ltfr ,
~
, • ,e. , I
, r AT TC SHOWN FOR ITIR"SI
4 6 8 10 , , n,
4 • • 4 I' • .1
10
SURGE CURRENT DlJltATION -
,00
FULL CYCLES
SUJtGE CURRENT PUlSE DURATION_ml TIME I tJ- m. It2CS-2921!
.I-1E12IZ
Fig. 11 - Surge capability without reapplied Fig. 12 - Peak .urge on'.tate current and fusing
Fig. 70 - Peak surgtJ on-stilts current as II function blocking voltage for all series. current as a function of time.
of $Urge CUfrent duration.
c IUt CASE TEMPERATURE
I /
I 71/ 1,.
.
-----
}
i IE
II~~/
" I'.
. -- ~
~
t
~
j-;.t ~
i ffi ~
{7C ). .. 9Ooi
/1 I ~
,.. .
I
0
• ,
INSTUTANEOUS ON-STATE' VOLTAGE "'T 1- Y
I.' 0
• 1000
"ca-Z8ZI. GATE-TO-CATHODE RESISTANCE 1"oW-4 92CS~ 19839 ICASE TEMPEftATURE 1Tcl-"C
Fig~ ,3 -.Maximum instantaneous on-state current

as II function of on-state 1I01tage.
Fig. 14 - DCholdingcurrenta.a function of gate-
cathode resistance for the e106 series.
Fig. 15 - DC holding current as a function of case
temperature for the C106 series.
~ DC OFF-STATlYOI.TA6EtVDI.12Y I 8 ~~ ~~.S~~TAN,,;~::,~.:~·12V
1 . c.se: U)AO RUISTANCE UI .. '.304
TEMPPATUJilE (TC,02S-C t
,
• CASE TEMPERATURE ITCI-2S*(;
I
9 ' ~
~
I '1""'- I
i ·
Ii .'"= " I ,··
,
.............
5 ·
! . , . ..
.
,.1
, , . .I ...· .. ,.
~
, , , ... . ..
, , ,
100 '000
CASE TEMPERATURE tTCI-"C
GATE PULSE OUAATION-f's 92CS-19811 92(5-I904R1
Fig. 16 - Maximum flBte trigger current 8$ a function Fig. 17 - Maximum gate trigger voltage as a function Fig. 18 - DC gate trigger current as a function of
of pulse duration for typal in the C106 of gate pulse duration for types in the case temperature for C106 and etOB
series. C106 ..rie•. series.
CASE TEMPEAATURElTcl-OC CASE TEMPERATURE (Tcl-*C
Fig. 19 - DC gate-trigger currenta. a function of Fig, 20 - Gate trigger itoltaga N a function of

CNe tamperature for Cl01 serie•• case tempera turs for all $Bries.
516 __________________---------------------------------------------
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON CONTROllED RECTIFIERS
5106, 5107 Series

Features:
4-A Sensitive-Gate Silicon Controlled Rectifiers • Microampere gate sensitivity
• 600-V capability
For Power Switching and Control Applications • 4-A (rms) on-state current ratings
• 20-A peak surge capability
The 5106 and 5107 series of sensitive- with low-level logic circuits. They can be used • Glass-passivated chip for stability
gate silicon controlled rectifiers are designed for lighting, power-switching, and motor- • Low thermal resistances
for switching ac and dc currents_ These SCA's speed controls, and for gate-current ampli- • Surge capability curve
are divided into the three different series fication for driving larger SCA's.
according to gate sensitivity_ The types All tyPes in each series utilize the JEDEC
within each series differ in their voltage TO-202AB (RCA VERSATAB) plastic pack-
ratings; the voltage ratings are identified by age.
suffix letters in the type designations.
These thyristors have microampere gate- TERMINAL DESIGNATIONS
current requirements which permit operation
TERM 4
V RSXM ' I S10SY SIOSA

S107Y SI07 A
I I
S10S0 SIOSF S10SB S10S0
SIOSC
SI07C
I
S10SM
SIOSE
S107E
I ·~tf rop VIEW

~=Gm
~R
r=fr
ANODE
CATHODE
RGK = 1000 l!. Te = -40 to 1100C............... 51070 S107F S107B 51070 S107M
TERM 3 2 I
VOSXM' 25 50 75 125 250 400 500 600 700 V
I
92CS- 29320
RGK = 1000 n, T e = -40 to aooe .............. .
JEOEC TO-202AB
RRXM
V RGK '= 1000 H, Te = -40 to 110°C .......... 15 30 50 100200300 400500 600 V
VO~~~'= 1000 H, Te = -40 to 1100C ............. .

IT(AVI (T e = 60°C, I) = 180°) ..................... 2.5 A
IT(RMS) (Te = sooe, Ii = 180°). . . . . . . . . . . . . . . . . . . . . . 4 A
IT(De) (T e = 70°C) ...... - ....................... 2.75 A
ITSM '
For one cycle of applied principal volfage. T C=600C
60 Hz (sinusoidal) ........................... 20 A
50 Hz (sinusoidal) .................... _ . . . . . . 17 A
For more than one cycle of applied principal voltage ••.. See Fig. 5
IGM (t = 10 pSI ................................. . -----0.2 A
VGRM ·········································· 6 V
di/dt,
VOM=VOROM' IGT = 1 rnA, tr = 0.5 ps, T e = 110°C .. -----100 ------A/ps
12t [At Te sholNn for ITIRMS)J ,
t = 10 ms .................................... . 1.7
1 = .................................... . -----0.8
PGM IFor 10 ps max.) ............................ . -----0.5 RMS ON1-STATE CUR~ENT [ITUftlSiJ-A
.r:ct~I..so1l1
PG(AV) (Averaging time = 10 ms max.) ............... . -----0.1
F;g. 7 - Power dissipation as a functIon of
Tstg ........................................... . 40 to +150 - - - - - -
rms-on-state current for all series,
Te············ ................................ . -----4010+110 - - - - -
TT (Ouring soldering for 105 max. . ................. . -----250
"r-t--t--+-''f''-+-''''I---I
I
I~
DC ON STATE CURRENT [IT(Dc~-A ... 0.0 ""
ON-STATE CURRENT IIT_I-A
SlCS-28384
F;g. 2 - Power dissipation as a function of F;g. 3 - Max;mum allowable case temperature F;g, 4 - Maximum allowable ambient temper-
dc on-state current for all series. as a function of on-state current for ature as a function of'on~state Cur-
all series, rent for a/l series.
517
SILICON CONTROLLED RECTIFIERS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
S106, S107 Series

ELECTRICAL CHARACTERISTICS 401""8
TEMPlRAT"E{Tc"WC .LH 1. II
.J.
LIMITS LTE irRoL MAY BE LOST
FOR ALL TYPES ~1 .. DUfiNG AND IMMEDIATELY
CHARACTERISTIC UNLESS UNITS "-

"~
FOLLOWtNG SURGE-CURRENT
WTERVAL
~!:! UNTIL ,JUNCTION TEMPERATURE
OTHERWISE HAS R£TURt-EO WITHIN STEADY-
i;20 STATE !tATED VALUE
I; ~ ~~ '0:,,-
SPECIFIED
Min. Typ. Max.
IORXM or IRRXM: ~~ 10
VO=VORXM or VR=VRRXM, RGK=1000 n ~i!i
r:::: ::::::
vT:
TC= 25°C
TC=1100C .
-
-
0.1
10
10
100
I1A
0
. . " f::::::, ...
10 100
SURGE CURRENT DURATION-FULL CYCL.ES
1000
For iT=4 A and TC=250C (See Fig. 9) - 1.25 2.2 V

iHX: Fig. 5 - Peak surge on-state current as a
RGK=1000 n, VO=12 V, IT(INITIAL)=50 mA, TC=250C: function of surge-current duration
5106 Series - 1.7 3 for all series.
5107 Series - 3.9 6 mA IOCC, SlNGLE-HALF-SlNE-WAVE PULSE NON-REPETITIVE
REAPPLIED BLOCKING VOLTAGE-O
6IGT.lmA SOUARE PULSE, to", DURATION
iLX:
RGK=1000 n, VO=12 V, TC=250C: ~ , CASE TEMPERATURE (TC'·215-C
-
~
S106 Series (IGT=200 I1Ai. 1.8 4 ii 2
1111
5107 Series (lGT=500 I1A). - 2.5 8 mA ~2 ......... ..........
EIOO
IIII
dv/dt:
n, Exponential rise, T c=llOoC - _. ~i ' UNSAFE-AREA
OF OPERATION
VO=VORXM' RGK=1000 8 V/l1s
~5 •
IGT:
VO=12 V dc, R L =30 n, TC=250C:
! · (\7.: SVRGE
CVRR&NT
'1'-W I
SAFE-AREA .......
OF OPERATION r--...
~ .;, PULSE ,.-L-
5106 Series
5107 Series
-
- -
30 200
500
See Figs. 14, 15, 16
I1A 10
001
, .. ,
DURATION
0.1
1111 ,
, '68 I
SURGE CURRENT PULSE DURATION-In'
." 10
VGT:
VO=12 Vdc, RL =30 n, TC=250C
- 10.5 I
0.8
See Fig. 17
V
Fig. 6 - Surge capability without reapplied
blocking voltage for all series.
li 10, AT TC SHOWN FOR :tT(RMS)

tgt:
"Ii!
VO=VORXM' iT=l A, RGK=1000 n,
IGT=l mA, Rise Time=O.ll1s, TC=250C - 1.7 2.5 I1S i ·
'
tq:
VO=VORXM' iT=l A, RGK=1000 n,
tl
~;
'
.,~
..~'
~ll l' ~'"
.-'
:
Pulse Ouration=50 I1s, dv/dt=5 V IllS,
di/dt=-10 All1s, IGT=l mA at turn·on, TC=1100C - 30 100 I1s
i~
ROJC .- - 8
°CIW II!
ROJA - - 60 II •
~
OJ
4 •• 1 4 "10 4 &'100
0.1
TIMEln-. .
Fig. 7 - Fusing current as a function of time.
,
i :J--CASE TEMPERATUtE
tTc'-Z5"C
~ , / T 'o~------~-------~--·+_-~--+_~
~
, II / ;!
~
B ,
~
·, .~ ~
~
S ·
·,,
~ OJ
~ II
; 00'
os s 2.
INSTANTANEOUS ON·S....TE VOLTAGE I'fl - V "CS-.... I
• GATE-lO-CATHODE RESISTANCE (Ro.c)-A CASE TEMPERATURE ITCI_oc •
Fig. 8 - Instantaneous on·state current as a Fig. 9 - DC holding current as a function of Fig. 10 - DC holding current as a function of
function of on-state voltage for gate-cathode resistance for the case temperature for the 5.106
all series. S106 series.' series.
518 ____________________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON CONTROLLED RECTIFIERS.
S106, S107 Series

~~ DC OFF-STATE YOLTAGE\VOlo 12V
~
~
Ii
.
0
LOAD RESISTANCE tRL \. 5O.Q
CASE TEMPERATURE ITcl'25"C
...........
!
i~ . 10'
0
0 "
~ "~
I ,.,
. . o. '0
, ., .
GATE PUL.SE DUAATION-,...
'00
.. 00
1000 4 6 8 10
GATE PULSE DURATION-joI'

CASE TEMPERATURE ITcl_oC
Fig. 11 - Maximum gate trigger current as a Fig. 12 - Maximum gate trigger voltage as a Fig. 13 - DC gate trigger current as a function
function of gate pulse duration function of gate pulse duration for of case temperature for S 106 series.
for types in the SI06 series. types in the S106 series.
,
CASE TEtoIPERATURE(TCI-OC CASE TEMPE.....TURE tTcI-·C
Fig. 14 - DC gate trigger current as a function Fig. 15 - Gate trigger voltaga as a function of
of case temperature for S107 series. case temperature for a/l series.
519
52060, 52061, 52062 5eries
4-A Sensitive-Gate Silicon Controlled Rectifiers

Features:
For Power Switching and Control Applications
• Microampere gate sensitivity
The 52060, 52061, and 52062 series- are sensit"ive-gate can be used for lighting, power·swltching. and motorof,peed • Minimum gate current specified for the S2062 sariel
silicon controlled rectifiers designed for switching ae and de controls. and for gate-current amplification for driving larger • 600-V capability
currents. These seR's are divided into the three different SCR's. • 4-A Irms) on-state current ratings
series according to gate sensitivity. The types within each All types in each series utilize the JEDEC TO·22OAB • 36·A peak surge capability
series differ in their voltage latings; the voltage ratings are package. Upon request. each type is available in either of two • Glass-passivated chip for stability
identified by suffix letters in the type designations. variants of the TO·22MB package. For infOrmation on these • Low thermal resistances
package variations. contact the RCA Sales Office in your • Surge capability curve
These thyriston have microampere gate-current requirements
locale.
which permit operation with lOW-level logic circuits. They
eFormerlv 1he RCA'06, RC.4'07, and RCA108 seri".
CATHODE
Suffix Letter ANDOE
MAXIMUM RATINGS. Absolute·Maximum Values:
NON·REPETITIVE PEAK REVERSE VOLTAGE
a v F A B C D E M
RGK "1000 n, TC =-4010 110"C . . . . VRSXM}
NON·REPETITIVE PEAK OFF-sTATE VOLTAGE 25 50 75 125 250 400 500 600 700 V
RGK "'1000 n, TC =-4010 110"C ... V OSXM
REPETITIVE PEAK REVERSE VOLTAGE GATE
RGK = 1000 n, TC =40 to lute. . . . . . . . VARXM}
REPETITIVE PEAK OFF-sTATE VOLTAGE 15 30 50 100 200 300 400 500 600 V
RGK '" 1000n,Tc --40to 110°C . . •...•. VORXM
ON-8TATE CURRENT:
JE DEC TO·220AB
Conduction angle" 180c , T C = S5c C
Average ae value ITtAVI 2.5 A
RMSvalue' ITIRMS) 4 A
DC operation . . . . . . ITIOe) 2.75 A
PEAK SURGE (NON·REPETITIVEI ON-sTATE CURRENT: IT8M
For one cycle of applied principal voltage, TC .. 850C
60 Hz IsinulOldaU ••.•.••.••.••.•.....•...•.••.•• 35 A
50 Hz (alnulOidaU ., •••.••.••.••••..•• , •..••.••.• 28 A
60 Hz binusoidall IrSM 35 A
For more than one cycle of applied principallo'Oltage See Flg.5
PEAK GATE CURRENT It'" 10/-lsec::1 . . . . . . . . . . 0.2 A CURRENT WAVEFORM. SINUSOIDAl.
'GM LOAD: RESISTIVE OR INDUCTIVE
PEAK GATE REVERSE VOLTAGE VRGM 6 V c:oNOUc:TlYE ANGI.E. 180-
RATE OF CHANGE OF ON-8TATE CURRENT:
VOM '" VDROM, IGT '" 1 rnA, tr = 0.5#'s, T C .. 110°C di/dl 100 A/lJ.s
FUSiNG CURRENT (forSCR protection):
TJ '" -40 to 1100c, t .. 1 to 8.3 m ••••••••••••••••••• , 12, 2.6
PEAK FORWARD lfor 10 #'1 ma~.1 . . . . . . . . . . • . . . PGM 0.5 w
AVERAGE (allllraging time ., 10 rna mex.l . • • • . . . . . . . PG(AVI 0.1 w
TEMPERATURE RANGE:
Storage . . . . T... ·40 to .150 'C
Operating lease'" -40 10 .110 ·C
TC
TERMINAL TEMPERATURE (During soldering):
~r10smax. ... . ......... . TT 250
*Temperatura measuring point il shown in the dimensional outline.
['TlRMSil- A t2CS-lt130
Fig. 1-Power dissipation vs. rms·on·state
LIMITS current for all series.
FOR ALL TYPE.
UNLE88
OTHERWISE
SPECIFIED
MIN. TVP. MAX.
PEAK OFF-sTATE CURRENT:
Forw.rd. Vo" V ORXM' RGK" 1000 n
TC·260c • . • . • • • . IORXM 0.1 10
T c "'1100C . • . . . . • • 10 100
pA
R;;:2~Jt· ~R~X~' ~G~ ...1~ ~ . IRRXM 0.1 10
Tc·'OO<>C . • . . • . • • • 10 100
INSTANTANEOUS ON-sTATE VOLTAGE:
For iT"4 A and TC" aOc (See Fit • .1.1
DC GATE TRIGGER CURRENT:
• "T ..," 2.2 V
VO "12Vldcl, R L -:mO,TC "26oC:

S2060 Series . . • • 200 pA
S2061 Seri.. • • • • 'GT 600
S2062 Series 'OIl 2000
For other C!lS8 tamperatures . Sea Fig•• 10,11.12
-Ju.l.o~
DC GATE TRIGGER VOLTAGE:
V D -12Vtdc), RL "'aoO,T C ·25oC V GT V
For other case temperlturas.. . . • • SNFig.14
DC ON STATE' CURRENT [ITIDCil-A
INSTANTANEOUS HOLDING CURRENT: t2(SiM3lfl1
RGk -1000 n, V D -12 V, IT tlNITIALI" 50 mAo TC" 26°C:

S208DSeri81
S2D61 Series
'H '.7 3 rnA
Fig, 2-Power dissipation vs, dc on-state
3.9 8
S2062Slrill B ,0 current for a/l series.
520 ____________________________----------------------------------
52060, 52061, 52062 5eries

LIMITS
FOR ALL TYPES
UNLESS
OTHERWISE
SPECIFIED
MIN. TYP, MAX.
LATCHING CURRENT:
RGK = 1000 n, Vo =- 12 V. Te = 2eGe:
S2060Series IIOT '" 2OOs,tAI. ;L 1,5 mA
52061 Series IIGT = 500 JA AI 2 .•
S2062SeriesIIGT= 2000 f.l. A J • • S 12
CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE:
Vo '" VORXM' RGK .. 1000 n, dv/dt V/",s
Exponential rise, TC .. ltOCe . .
GATE·CONTROLLED rURN"()N TIME:
Vo .. V ORXM ' iT" 1 A. AGK .. 1000 n.
lOT" 1 mAo rise time .. 0.1 I's.. T C .. 26°C
... 1.7 2.5
...
Fig. 3-Maximum allowable case temperature
CIRCUIT COMMUTATED TURN-OFF TIME:
VO" V ORXM ' iT .. 1 A, RGK .. 1000 n,
Puis. Duration" 60 Jil, dy/dt .. 6 VIlAS. t. ••
VS. on-state current for all series.
dl/dt .. -10 AI",s, IGr" 1 mA at turn on, T C -1 ,gOe . 30 100

THERMAL RESISTANCE:
R~A;;iE":'ifL&:"':iNGWAYv&.~~~O(NON-REPETtTI\lE f---
Junctlon-to-Ca.. - ". . .
Junction-tc)..Ambi."t. •
•
.
.
.
•
•
•
•
.
.
•
•
.
.
•
•
•
•
R8JC
"BJA
3.5
80
.oe/W
!~ ~~I~:=':;u':"~i~;:COURATION I---
• TemJMratttr. m...urlng point Is snown In the dlmen.lonal outline,
~ 4 • r-.....
~ U~S.~E:.~"
•0
lT1J J .1r. I Ii • ~ OF OPERATION
II ~Ir- r-..... III

CASE TEMPER...TURE ITe '.''!IOC.), I 1
om CONTROL MAY . . LOST ~
~ r"o,.l'R't~~G SURGE-CURRENT
DURING AND IMMEDIATEI..Y ~ 100
~~ 30 I"""
~:t
,I"'lr-
.....
r-.
I;
~T
OVERL.OAD MAY NOT BE REPEATED
1i:~lr,til~~~tit,~=t:
TED
..~~m~. ;J: i
~~.
1\--:l2-
L-,---" -- SAFE!.'!. r
OFOPERA1'lOt<I r---
1f!E
~i 20 50.. r-- ! , SURGE
CURRENT III i
i~~
='1' 1--
~ 10
00'
0.:::J PUL.SE
,
OtJRATION
. 6 RO.I
, III , 'I ., ,
n 10
SURGE CURRENT PUL.SE OURATION-m'
<U ...
O~-STATE CUARE~T ttTJ-A
, . .. 10
, . ..
SUME CURRENT DUR"'TION-FUL.1.. CYCI..ES
, . ., 1000
Fig. 6-5urge capabilitv without reapplied
blocking voltage for all series.
Fig. 4-Maximum allowable ambient Fig. 5-Peak surge on·state current vs.
temperature vs. on·state curren t surge-current duration for all series.
for all series. "
1"'tI CASE TEMP£AJ.llIRE
T 10
4r-- ~
i
rI
1Tc,-e-C
;r , /
i
~
w
~
··, ,
fI -11
/
~
g
6
4
t--
r-- r--I--- ~
- ~~1t04"'UIIt(7;
" . . •-
C
'1
e ·· ~
2:J.C·
~ Q, 2
~ I 100 2 1000
~ GM"E-TO-CATHODE RESIStANCE IR~-4 9.l!CS-IHS9
~ 001
0 os , ,.S 2 2. , Fig. 9-DC holding curren t vs. gate-cathode
CASE TE....ER... TURE ITCI_oC
resistance for the 52060 series.
Fig. 7-lnstantaneous on·state current vs. Fig. 8-DC holding current vs. case temperature
on·state voltage for all series. for the S2060 series.
CASE TEttlPERATURE(TCI--C CASE TEMPERATURE(TC1-"C CASE TEMPERATURE 1Tc}--C
Fig. 10-DC gate·triggar current vs. case Fig. "-DC gate·trigger cur7-ent vs. casa Fig. 12-DC gate· trigger current vs. case
temperature for S2060 series. temperature for S2061 series. temperature for 52062 series.
521
S2060, S2061, S2062 Series

10, DC OFF-'TATtVOLTAlEIVo)aI2V
1. Ii ~.: ~:::::Ut:R~~C'J~C ' i Ii CASE TEMPERATURlITcl-2'·C
~ · i 4
!i · .........
~
~
~
··,
'" ......
! , . ..
id ,
i'
., . , .. 0.1
" 1i'1OO I! • Ii 81000
10 100
GATE PULse: DURATION-III GAT! PULSE DuR.ATION-",
CASE TEMPERATURE lTcl--<: '!CI-I18a"'l
Fig. 73-Maximum gate-trigger current vs. Fig. 75-Maximum gate-triggar voltage vs. gate
gate-pulse duration for tvpes in the Fig. 74-Gate-trigger voltage vs. case pulse duration for tvpes in the 52060
52060 series. temperature for all series. series.
522
SILICON CONTROLLEO RECTIFIERS
S2200(2N3528, 2N3529,2N410'2), S2710,

S2700(2N3228,2N3525,2N4101, Series
FEATURES
5-A Silicon Controlled Rectifiers • D.sign" es,ecially for high-volume systems
For Low-Cost Power-Control and Power·Switching Applications
• Readily adaptable for printed-circuit boards and lIIetal
heat sinks '
RCA 2N3228*. 2N352S'. 2N4101'. and 2N3S28". Types 2N3S28. 2N3S29. and 2N4102 use the JEDEC
2N3529., and 2N4102· are alL-diffused, three·jlloction, TO.8 packa~ and have' a blocking voltage capability of • Low switching lo..e.
silicon controlled~rectifiers (SeRfs) intended for use in
power.control and power-switchins applications. (~!Ov!?2e)::sa:nB~hi!:~::~p~,!:~~ :t2~C~ 2 amperes • High dildt and dv/dt capabillti ••
• Shorted emitter ,at...cathode construction
Types 2N3228. 2N3S2S. and 2N4101 use the JEDEC
1'0-66 package and have a blocking voltage capability of 527108. 527100. and 52710M are all-diffused. thr••·
junction siljeon oontrolled·rectifiers having integral heat • Forward and reverse ga .. dissipation ratln,1
up to 600 volts and a forward current rating of 5 amperes
(rms value) B.t a case temperature of 750 C. radiators. They are varian1S of the 2N3228, 2N3625. and • AII-clIffu.ed construction - auure. exceptional uni.
2N4101, respectively .... formlty and stability of characteristics
• Fonnerly Dev. Types TA1222. TA1225. aad TA2773. re-
spectively.
.0 Dlrect-solde,ed Internal construction -aISU,..
c.p.lonal re.iltance to fatilue
• Formerly Dev. Types TA2S97, TA2617, aDd TA277" re-
spectively. • Symmetrical .. te-~athode. construction - provide. uni-
form curren. density, rapid electrical conduction, and
.f.
efficient heat dissipation
A6so'ute-Maximum Raf;n,s, lor Operation wi'" Sinuso,d.' AC Sup,/y Volfap • AII.welded construction and hermetic ,ealin,
Frequency _tween 50 and 400 Hz, ami with Res's"", 01' 'nduefive Load
• Low le.ka.e currentl, both forward and.,..e,.e
RATINGS CONTROLLED-RECTIFIER TYPES UNITS • Low forward .olta,e drop at high current le.,el.
2113521 I 2N3529 12N.102
~~~~: I ::~t I ~~W:~
• Low thermo I r•• lltance
T'lIIsitnl Pe.. Reverse V.IIa..
(N...-lllpetilive). vRIIln ... .,.p) •...•••••. _•.•. 330 660 700 3Jl 660 700 volls
PetrI< Re..... V.I .... (illpelilive). vRII('ep) .....• 200 400 600 200 400 600 volls
PetrI< F.iwa,d BI.ckin. Voila..
(Repetitive). vFBIlM(rep) ..•.....•....•.••. 200 400 600 200 400 600 volls
For..rd Current
F., .... lImper.brre ITC).I + 75·C.
and unil mounled on he.1 sink-
A.." .. DC value ,I. , ...du,lion
-- -- --
lillie a1l800. IFAV ..•.•••.....••..... 3.2 3.2 3.2 amperes
RIIS value. IFRIIS ....•. _....•......... 5.0 5.0 5.0 ..peres
Fa,.IIIe, ,andili.ns. See Fil. 2 'ItCS-I:?T!O
Fa, lree-air lernperabrre IT FA).I 2SOC. BOTTOM VIEW

and willi na he.1 sink employed-
Ave,... DC value ., • , ...du,lion JEDEC T _
a.lle .1180". IFAV •..•••.•........•.. 1.7 1.7 1.7 1.3 1.3 1.3 amperes CATHODE
AMS value. IFRMS ......•....•....•.... - - - 2.0 2.0 2.0 allperes
Far .lIIercornlilioos. See Figs. 3 & •
Pelk So,. Cu,renl. iFM(sur.):
For one cvlce of applied principal voltage.
60 Hz (sinusoidal), TC = 75°C .•••••• 60 60 amperes
50 Hz (sinusoidal), TC = 750C .•• _.•• 50 50 amperes
Far Mora lIIan 000 cycle of .pplied volla18..••.•.. See Fil. 5 See Fil. 5 ANODE
Fusing Current (for SCA protection): lHEAT RADlATORI
92CS-iT1'!!!
TJ =-40 to 1000C, t = 1 to 8.3 ns.l2t : 15 15 IOIpe,e 2 BOTTOM VIEW
se,ond
Ra.. al ChI." al F.rw,rd Curranl.
dildl •••....••.•....•... ............. 200 200 ampe,e.1 TO·66 with Heat RadiatOf"
mi crosecand
VFB' vBQo(mi •• v.lue)
IGT' 200mA. 0.51-'5 ,i .. lime
Ga.. Power":
Peak, Forward or Reverse, fOf IOJ.Ls duration, PGM •
Tempe,.brre:
(See FilS. 7 and')
A..r.... PGAV ...•...••..•.•..•.•..•.•.
::~:(~): T~· .....................

13
0.5
-40 Ia +125
-40 Ia +100
'An, value. al peak eale currenla' peak .... voillpia I'" lIIe maXimum aale p..... ,s permlSs,ble.
13
0.5
-40 la +125
-40 10 +100
watts
watt
"C
ac
i
I
!
CATHODE
D 92CS-27722A1
BOTTOM VIEW
GATE
ANODE
ICASEI
JEDEC TO-&
523
i
I
S2200(2N3528, 2N3529, 2N4102). S2710,

S2700(2N3228,2N3525J- 2N4101}, Series
C••toe,.,lo.lco.' Maximum Ratl.g. (UIII.... therwl•• o,..WoJl, ••rI •• Inrllcattr/ C••• Tom,...futO (TCI CONDUCTION ANGLE • lao-
C1tARACTERISTICS CONTROLLED·RECTIFIER TYPES UNITS

2N3228, 2143528 2N352S, 2N3529 2N4101, 2N4102
S2710B S2710D S2710M
Min. TY!I. Max. Min. Typ. Max. Min. Typ. Max.
For..'" Breakover Voltage, vBOO:
AIlC' .IOOOC .•....•.........•..•...•... 200 400 600 valls
Peak 81od1inl Currenl, 'IlC' .IOOOC:
Forward, IFBOII •.........•..•.....•........ 0.10 1.\ 0.20 3.0 0.40 4.0 mA
VFBOP. vBOO(min. value)
Reverse, IRBOM ............................
VRBOP = vRM(rep) value
- 0.0\ .7\ - 0.10 1.\ 0.20 2.0 mA AVERAGE FORWARD CURftENT (IFAV~S
12C$-121S0
Forward Vollap Drop, vF Fig. 1-Power dissipation chart for all types.
AI. F.rw.rd Current .f 30 amperes and a TC· .2\·C 2.1\ 2.8 2.1\ 2.8 2.1\ 2.8 YOlls
DC Gate· Trilpr Current, lOT
At TC· .2SOC(See Fie.9) ........•............ 1\ 1\ 15 mA(dt)
Gate·Tri&aer V.II.... VGT
AI TC· .2SOC(See Fig. 91. .......... 1.2 2.0 1.2 2.0 1.2 2.0 vofts(de)
Hofdine Currenl, iHOO
AITC' .2SOC •............................ 10 20 10 20 10 20 mA
Crilical Rale .f Applied Forw.rd V.II••e.
Crilical dvldl ........................ 10 200 10 200 10 200 vollsl
VfB = vBOO(lItin. value), exponential Jise, microsecond
TC' .IOOOC
TUIn·On Time, ton, (Delay T,irne t Rise Time) ...
VFB' vBoolmin. val,e). iF' 4.5amperes.
.... 0.7\ 1.\ - 0.75 1.\ - 0.75 1.\ microseconds
IGT' 100mA. 0.1 "S!i,e time. TC = '2SOC AVERAGE FORWARD CURRENT l%FAV)-AMPfAES
~·ItMI'"
Tum·Off Time. 'off. . . . . . . . 15 50 15 50 15 50 micfOseconds Fig. 2-Rating chart (case temperature)
iF' 1 amperes. 50",p,lse widlh, dVFIY''' = 10v/",; for types 2N3228, 2N3525, and
dirldl = 30Al",. lOT' 100mA. TC = .75·C 2N4101.
2143228,2143525, 2144101 2143528,2143529,2"4102

Mm. Typ. MaJ., Mm. . Typ. Ma,.
Thermal Resistance:
Junttlon·to-case ............................ . 4 5 ·C/W
J"nct~oiHo-amblent ...... . 40 40 0c/w
52710 series
Junction·to-Ambient ...................... . I - 28
AVERAGE FOftW4RD CURRENT (I,.AVI....:-AMPPII:.

!tICS-ln"lltl
Fig. 3-Rating chan (free-air temperature)

for types 2N3528, 2N3529, and 2N4102.
LOAD • AfSISTlvt
~'1ml~~~rr,-~~Ar~~Ano vaLUE
, w
""
''''
~,
i
i ,
2N!22II.
2IQ!25
,,'r"O'1
I"" ..
-~~i
~
~,." !l; ·75·
! .-n' '. ~~
Te'
.. . . . . .....
T ••5 "
I 0.' I ~ 2 U
,. co INSTANTANEOUS FORWARD VOLTA8E DROP IWF)-YOLTS
AVERAGE ON-STATE CURRENT [tTlAVTI-A SURGE CUMI!NT DURAT~-CYa.1!S
'llCSwIl'SlIt2
Fig. 4-Maximum allowable ambient temperature Fig. 5-Surge-current rating chart. Fig. 6-Forward characteristics for all types.
VS. on·state current for S2710 series only.
524
52200(2N3528, 2N3529, 2N4102), 52710,

S2700(2N3228. 2N3525, 2N4101), Series
GATt CUMENT UQTJ-AMPtR£S
Fig. 7-Reverse gate characteristics. Fig. 8- Turn·on time characteristics:
0.1
GATE - TO-CATHODE CURRENT -
1.0
AYPER£$
Fig. 9-Forward gate characteristics.

I.
-
...... Fig. TO-Operation guidance chart for types
2N3228, 2N3525, and 2N4TOT.
525
52600, 52610, 52620 5eries

7-A "Low-Profile" Silicon Controlled Features:
• Forward and reve". gete ratings
Rectifiers • All-diffused center gate construction
• Low '.akage currents; both forward and reverse
For Power SWltcnlng, rower I.OmrOl, t'ower Crowbar, and Ignition Applications • Low forward voltage drop at high current 'evell
The S~600, 52610, and 52620 series are all-diffused, silicon The 526008, 526000, and S2600M have a three-lead low· • Hi~ ~Ise--cu~,!d capability for c.Plcitor-ciischarge
controlled rectifiers (reverse· blocking triode thyristors) for pr!'file. .I,acl<"!!" (similar to the JEOEC TO·5). The5261oi1. ignition circuits
capacitor-discharge ignition systems, high-voltage generators, 526100, and S2610M ~!lve integral heat radiators. The • High d./dt capability
and POWer-switching and control applications. ." They may be S2620B~ 526200. and S2620M have integral heat spre"ers. • Low switching kmes
used in capacitor-discharge iqnition systems (battery or magneto • Low thermal resistance
!ie!!l for internal combustion engines. electronic igniters. ~nd • Sub-cyde IUrge capability curve
.J:llIIh.:.voltage generators. Other uses are
power-control and
rERMINAl CONNECTIONS
power. switching clrcuiU.
....... s_ "Low·Profile TO-5"
,,-fj''-
MAXIMUM RATINGS, Absofute-Maximum Values: S2&OOD
For Op8rlltion with Sinusoidsl Supply Voltage at Freqcwnci9$ up to S261~ 828'00 828''''
50160 Hz IIIId with Resistin or Inductiv. LOBd. S282CII S262IID s _
NON·REPETITIVE PEAK REVERSE VOLTAGE e
Gllteopen ....•. ..:: ... :.:.~ '.!" ' .•.•••..••••••••••••..•••• VRSOM 250 500 700 v
NON-REPETITIVE PEAK OFF-8TATE VOLTAGE:-
Gate open ..•..•..•.......•........•.....•.....•....•.. VOSOM 250 500 700 v
REPETITIVE PEAK REVERSE VOLTAGE-
'Ilc,-tn14
Gate open •...................................•........ VRROM 200 aoo 600 v
REPETITIVE PEAK OFF-8TATE VOLTAGE-
Gllte open •••....•........••........................... VDROM 200 400 SIlO v BOTTOM VIEW
RMS ON-8TATE CURRENT (Conduction angle'" 18QO) •••.••••••• 'T{RMSI - - - - See Figs. 2-6 - - -
S2600 Series
PEAK SURGE tNON·REPETITIVE) ON-STATE CURRENT: ITSM
For one cycle of applied prin/;:ipal voltage
60 Hz (sinusoidal) .. . .............•........•....
50 Hz (sinusoidal) ..•........... _ . , ........... , .. .
100
8.
100
85
100
85
..
A
"Low-Profile TO-5·· with Heat Radiator
For more tnan one cycle of applied principallololtage , - - - See Fig. 1-: - - -
PEAK REPETITIVE ON-STATE CUARENTt (See Fig .. 16):
DUly faclor '" 0.1%, TC = 750C
Pulse duratlqn = 5/o1s {min.'. 2O,IIs {max.) ..... 100 100 100 A
RATE OF CHANGE OF ON-8TATE CURRENT:
VDM· VQ.BQrJI,IGT =200mA,lr - 0.5/o1s ...... di/dt ----200---- AI,IIs
2
FUSING CURRENT (for SCR protection):
~NG
TJ "'-66to 1000C,t-l to8.3ms ........................ 12r: ----40---- A2, GATE
NON·REPETITIVE SUB-CYCLE SURGE CURRENT:
TC '" 25OC, single pulse,lGT = 50 mA, CATHODE
to
p.s square pulse •... ~, .....•..••....•.•.........•.....• - - - s.. Fill. 20 ---
GATE POWER DISSIPATION":
PEAK FORWARD (for 1 ,liS max.) ......................... PGM 40 40 40 w BOTTOM VIEW
PEAK REVERSe ....... , •. , • . . . . ....•........ PRGM -.- - See fig. 14 - -
AVERAGE (averaging time = 10 m$, max.l ............. , •... PG,CAV)' 0.6 0.5 0.5 w S2610 Serie.
TEMPERATURE RANGE':
"Low-Prof". T().5" with Heat Spreader
Storage .........•...................•...••.... , . . •. Tsts - - -65 to +HSD - - oc
Operating {case' . , • . . . .• . . • . . • . • . . ...••.. , . . . . • . .. TC - - - 6 5 to +100 - - OC
LEAD TEMPERATURE (During 1Qldering)·:
for 10smex. for case or Iuds .. " ....•..•. , ... , .. , •..•... ---225---- DC
GATE
t When rms current exceeds 4 amperes (maximum rating for the anoda leadl. connection musl be made to the case,
-rhese loIalues do not apply if there is a positive gate signal. Gate must be open, terminated. or lNwe negath,e bias.
"Any velues of peak gIIte current or peak gate voltage that yield the maximum gate power are permissible.
'For information on the reference point of' temperature measurement, see dimensional outlines.
-When thllse devices are soldered directly 10.the heat sink, It 60/40 solder should be used. case heeting time should be a minimum ... sufficient
to ellow the solder to flow freelv,
S2620 Series
CURRENT WAVE FORM: SINUSOIDAL

LOAO; RESISTIVE OR INDUCTIYE
CONOUCTION ANGLE· 110·
t MEAT II""
MOUMTI...
1:JR!~r.~~
NOTE: 'J.1'
te:::::
IlEAT
s..,,,
,"OINT 0'
~\~:::~~':.\
ft
AOtCIIIIE
:~:AJ:Mr..\"~Jt!'o~:'..'tS~..':1R'.'rO"
ca'l TIIIIG"''' A IMALt. HOLE
GRIL.LI 1M 1M It T 'Mil..
ON-STATE CUllftENT-A O.-STATE CURRENT-A
Fig. 2-Maximum allowable case temperature Fig. 3-Maximum allowable case temperature
Fig. '-Power dissipation vs. on-state current. vs. on·state current for S2600 series. vs. on·state curren t for S2600 series.
526
S2600, S2610, S2620 Series

ELECTRICAL CHARACTERISTICS, At maximum ratings. and at ;ndiclltBd ClIIB temperature (TCI unl. . otherwi,. IptlClfied
LII\IIITS
82810 So.II.
CHARACTERISTIC SYMBOL S28OOSori .. UNITS
S2620Sorin
MIN. TYP. MAX. MIN. TYP. MAX.

PEAK OFF.sTATE CURRENT:
IGate Open, TC' +1000 C)
FORWARO, Vo - VOROM •••. ........... 100M - 0.1 0.5 - 0.2 1.5
mA
. . . . . . . . . . . . . .. - -
REVERSE, VR,' VRROM
INSTANTANEOUS ON·STATE VOLTAGE:
............
IROM
..,
0.05 0.5 0.1 1.5
0.' ,..
=
For iT = 30 A and TC +250 C vT - 1.9 2.6 - 1.9 2.6 V ON~STATE CURRENT-A
DC GATE TRIGGER CURRENT:

Fig. 4-Maximum allowable ambient temp-
.as.·......1!
Vo = 12 V 10C)
=
RL 30 n IGT erature VS. on-state current for S2600
....
TC = +250 C . . . . . • . . . . . . . • . . • • . - 6 16 - 6 15 mA series.
For other case temperatures .. , ............ See Fig. 12
DC GATE TRIGGER VOLTAGE: CURRENT WAYE FORM: SINUSOIDAL
Vo -12 V 10C) CONOUCTION ANGLE' 110·
RL·30n
TC' +250 C . . . . . . . . . • . . • • . . • . .....
For other case temperatures . . . . • . . . . . . . . . .
VGT
- 0.66 1.5 J-
See Fig. 1
0.65 1.5 V
NOTI:
IIOfIUfIHIlIIATt.1I1IIllUIUlIlIIIENT,
ATTAeM TKlIIIIIOCOU"Ll TO
HUT .,IIIIAOCIil THIIOUGH A
'IIIAI.~ HOI.I DIIII.I.IO I" THI
HUT'."II.
...~
"IIUDIIt
INSTANTANEOUS HOLDING CURRENT:

Gate Open and TC = +2SoC . . . . . . , ........
For other case temperatures. . . . . . . . . , . . . . .
iHO - 9 20 J-
Sft Fig. 10
9 20 mA
l"OIl'l'OIi
01.0 III iI'OINTO'U."IIIATUIilI
""UIIIIIIINT
CRITICAL RATE'()F·RISE OF OFF·STATE VOLTAGE:

VO'VOROM
Exponential rise. TC = +1000C
ISee Fig. 3)
, ......... , dv/dt 20 200 - 20 200 - V/~s
GATE CONTROLLED TURN.()N TIME:

Vo -VOROM ,iT - 4.5 A
16T = 200 rnA, 0.1 /Js rise time tgt - 1 2 1 2 - ~s 'ISS"I'~2
TC = +250 C Fig. 5-Maximum allowable heat-spreader

ISee Fig. 15) temperature VS. on-state current
CIRCUIT COMMUTATEO TURN.()FF TIME: for S2620 series.
VO=VOROM,IT=2A
Pulse Duration = 50 ~s
-
CURRENT WAVE FORM: SINUSOIOAL. I
dv/dt = 20V/~" di/dt =-30A/~s Iq 15 50 - 15 50 ~s
LOAO' RESISTIVE OR INDUCTIVE
CONDUCTION ANGL.E • 110· r-lI
IGT - 200 rnA at turn on, TC = +7SoC
TH'l'ftIITOllWITHINT!8IIAL~
THERMAL RESISTANCE:
:-Z :1::r.:: D III
IJ~A' 5O·C/.
TIf:
Junction·te·Case . . . . . . . . , ...... .....

, ROJC - - 5 - - 5
Junction·to-Ambient (See dimensional outlinesl_ . . . . ROJA - - 120 - - 30
IS2810 Series) °CIW
Junction-to-Heat Spreader (See dimensional outlinel .. 7
ROJHS
(S~O-s.:i")
2.
ON~STATE CURRENT-A
Fig. 6-Maximum allowable ambient

temperature VS. on-state current
for 52670 series.
°:
~
I
10.00
.,
~ SINGLE HALF~SINE~'I""I\lE PULSE !NON·REP!TITIV£)
t..cI REAPPLIEO BLOCKING VOL.TACH:
r- ~ I ~J:~:~E::~~:: rr~~~~~~t DURATION
w
ill 1.000
1--~b..1
~i
III I III
g1 :1--" NSAFf: OPERATION
jl ::~I~ I "f'i"1't'
I- ~
ii ,O~r-i ""u
I III
I--~~
... !"'~.~JN r---:::
• 1-1 .,- hi1c33::1
~ "10 100
SURGE CURRENT DURATION-CYCL.ES
4 '1300
! •
00,
•. ..I I 4
"'(':IMU-
, 100,..
I I
'M '0
SURGE CURMNT PULSE DUftATION -S€C"!MEASURIEO AT'\fCURMNT)
. INSTANTANEOUS ON-STATE VOLTAGE (~Tl":'V
IUI-llI\OIlI
Fig. 7-PHk surge on-statll current VS. Fig. 9-lnstantaneous on-state current VS.
surgtl-curren t duration for all types. Flg_ 8-Sub-cycle surgs capability. on-state voltaflll for all typllS.
527
52600, 52610, 52620 5eries
CASE TEMPERATURE (TC1-·C CASE TEM'.UTI.t"! lTc .-~

92S$-3I91R2
Fig. 10-DC holding current (positive) vs. Fig. 11-Gete·pulse characteristics for Fig. 12-DC gate· trigger current (forward)
case temperature. forward· triggering mode. VS. case temperature.
MAXIMUM 'gt-td. t ,
SHORT CIRCUIT
CURRENT 1~ , I ~"POINT
Vo'
J O. I •
I ,\'\.i'- .
a
~
• \ I
I
.,..
'T•
0,'
I v~~~
'
~"'POIN
.. 'd" .,,
... Ig,"
~ ""-... r-. ~ ~~~i:.)(IM~

§ TYPICAL
-... -500 -200

REVEASE GAT!. CURAENTtIoAl-mA
-100
. . .S·S"7111
~, 0.3 .
0.
I I ...I .,I ,
0 S O.• 0,'
DC GATt. TRIGGER tuRMNT 11GT)-A
neG-lno.",
Fig. 13-DC gate· trigger voltage vs. cese Fig. 14-Reverse·gate voltage VB. reverse· FIg. 15-Gate controlled turn·on
temperature. gate current. time (tgr/ VB. gate-trigger current.
0.111 4 6 'n.! •• I, 4 . 1 10
Dun FACTOR - PER CENT
Fig. 16-Derating curve for peak pulse

current (repetitive) VB. duty
factor for the ignition circuit.
528 ______________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON CONTROLLED RECTIFIERS
S2800, S122 Series

Features:
8-A and 10-A Silicon Controlled Rectifiers • High dv/dt capability
For Power Switching, Power Control, and Ignition Applications • Glass-passivated chip
• Low on-state voltage at high current
levels
The RCA-S122 and RCA-S2800 series The plastic TO-220AB package provides • Shorted-emitter gate-cathode
types are medium-power silicon controlled easy package mounting and low thermal construction
rectifiers Ireverse-blocking triode thyris- resistance, allowing operation at high case
• Center-gate construction
tors) designed for switching ac and dc temperatures and permitting reduced heat-
currents. These devices can switch from sink size. These SCA's can be used in TERMINAL CONNECTIONS
the off-state to the on-state when both I ighting and motor-speed controls, capaci-
CATHODE
the anode and gate voltages are positive. tor-discharge ignition circuits, high-voltage ANODE
ANODE
(FLANGEl
Negative anode voltages make these de- generators, automotive applications, and
vices revert to the blocking state regard- power-switching systems_
less of gate-voltage polarity. BOTTOM VIEW r--
GATE
JEDEC TO-220AB
S122F S122A 5122B S122C 51220 S122E S122M 51228
S2800F S2800A S28008 S2aoQC 828000 S2BOOE 52800lIl1 S2BOOS
v RSOM....'
V OSOM '" 75 125 '50 375 500 600 700 BOO
VRAOM4, V OAOM & 50 100 200 300 400 500 600 700 V
!T(AMS) IT C '" 75 0 C,.
e = laa D} . S 122 series . A
. 52800 series 10 A
For one full cycle of applied

principal lIoltage 400 Hz 200 A
60 Hz 100 A
50 Hz B5
F or more than one flJ II cycle
of applied principal voltage See Fig.4
di/dt
Vo = V OAOM '
'or'"80 rnA, Ir = 0.5 f..Is. 100 AIJls
12 ,
RMS ON-STATE CURRENT [ITIRMS~-A
T J '" -6510 lOOoe;
':I2SS-4163R2
t = 1 to 8.3 ms . . . . 40 A',
P GM - (for 10,us max.). 16 W Fig. 1 - Power dissipation vs_ on-state current
P AGM • . . . . . . . . . See Fig. 10 for all types_
PGIAVI- (averaging time =0
10msmax.) . 0.5 W r-------~RRENT WAVEFORM: SINUSOIDAL

T sta• .. 65 to +150
6510+100
°c
°c
1..0AO: RESiSTiVE OR iNOUCTIVE
CONDUCTION ANGLE: 180·
CASE TEMPERATURE: MEASURED A~
TC .
TT
During soldering for 105
maximum (terminal and easel .. 250 °c
"These values do not apply if there is a positive gate signal. Gate must be open or negatively biased .
• Any values of peak gate current or peak gate voltage which result in an equal or lower power are permissible ..
• For information on the reference point of temperature measurement, see Dimensional Outline
ELECTRICAL CHARACTERISTICS,
At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (TcJ , ,
LIMITS AVERAGE OR RMS ON-STATE CURRENT [ITIAV) OR IT(RMS)]-A
CHARACTERISTIC For All Types UNITS Fig. 2 - Maximum allowable case temperature
Except as Specified
VS. on-state current for 5122 series.
MIN_ TYP_ MAX.
100M or IROM
VT
VO" VDROM or VR" VRROM' Te" +100o e
See Fig. 5 & 6
0.1 2 mA I CURRENT WAVEFORM: SINUSOIDAL
LOAD: RESISTIVE OR INDUCTiVE
CONOUCTION ANGL.E: 180·
CASE TEMPERATURE: MEASuRED AS
iT= l6A. Tc = 25°C (S122 series) 1.45 1.83 v I~ I' ,:"10= .. 1< I"
2 I~ I~'+C':'
I'. Ih'!'"
" 30 A, Te " 25°e (52800 series) 1.7
I~l IiL'I,c.1 •••• ...He •.•
IGT
V 0 " 12 V (de), RL " 30 n, T e " 25° e
See Fig.11 & 12
(S 122 series) 18 25 mA I~ ..... I ••. • ••••••.•
VO" 12 V (de), RL " 30 n, T e" 25°e (52800 series) 8 15 i~ "",L~, I'C= '",,:,' i:" ,I':
VGT
VO: 12V (de), RL "30n, Te"25°e 0.9 1.5 V
iHO
Te" 25°C (5122 series)
T e " 25°e (52800 series)
See Fig, 13
J ~~ I ;~ mA
, .
AVERAGE OR RMS ON-STATE CURRENT llTlAVI OR ITIRMSI]-A
92CS-26123
For other c;ase temperatures See Fig. 7 & 8 Fig_ 3 - Maximum allowable case temperature
vs. on-state current for 52800 series.
529
SILICON CONTROLLED RECTIFIERS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ~ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
S2800, S122 Series

At Muimum Rati",. Un"" Oth_l.. Sp8cifiod - at IndlCIJted c... Tsm/W7lwrelTCl
LIMITS
CHARACTERISTIC For All Typo. UNITS

Ex ....t II Specified
MIN. TYP. MAX.
dv/dt
V 0 = V OROM Exponential voltage rise.
TC = 100·C 5122 series 10 100 -
52800F 100 - -
52800A 75 - -
-
52800B
52800C
528000
52800E
60
40
30
26
-
-
-
-
-
-
-
VII's
I
. .. 10 100
NUMBER OF FULL. CYCLES IN SURGE DURATION
.
1000
9ZLII-IUIRS
,.
52800M 20 - - Fig. 4 - Allowable peak surge on·state current
528005 15 - - vs. surga duration for all tvpes.
tgt 5e. Fig. 16
Vo =VOROM. iT = 4.6 A. iT = 2 A
IGT = 80 mAo 0.11" ri.e timo
TC = +25·C - 1.6 2.5 1"
tq
Vo = VOROM. iT = 2 A. tp = 601"
dv/dt =200 V11'1. di/dt = -10 AII'I - 10 36 /JS
IGT = 200 mA at tON' TC =+75·C
R8JC - - 2
·CIW
R6JA - - 60
NSTANTANEOUS ON' STATE VOLTAGEI"TI-V

net-UTI!
Fig. 5 - Instantaneous on'state current vs.on·
state voltage for S 122 series.
.•
I
I I • ON' STATE CU •• 'NT • ISOoA
INSTANTANEOUS ON·STATE VOLTAGE I 'TI-V
Fig. 6 - Instantaneous on-state current VI.

on·state voltage for S2800 series.
-80 -to
CASE TEMPERATUREITcl-ec
Fig. 7 - Holding current VB. case temperature

for S 122 series.
CASE' TEMPERATURE t TC I - · C
Fig. 8 - Holding current vs. case temperature

for S2800 series.
•
REmttE GATE CUMENT (1 0,.1- A
• • '0,1 2 " •• I " • '10

GAT!, TRIGGIft CURRINT IIITI-A IISS-S","I CAiE TEMPERATURE tTc l-·C I2CS-21?IO
Fig. 9 - Tvpical forward·biased gate charac· Fig. 10 - Revarse gata vo/taga vs. reverse gate Fig. 11 - DC gate·trigger current VI. case tam·
terlstlcs for all tvpes. curren t for all tvpes. pere turtl for S 122 series.
530 ____________________________________________________________
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON CONTROLLED RECTIFIERS
52800, 5122 Series

PRINCIPAL DC VOLTAGE -1211 PFilINCIPAL. DC VOLTAGE -12V
LOAD' 30A, RESISTIVE LOAD. 300, RESISTIVIE
TRIGGERING MODE: rORWARD TRIGGERING MODE: FORWARD 600
i'i'i 'i;;I;;;;E","" , ~t
=:! ,..
I''': J"I"" 'i" ~~
i""i!~gjji ii 400
~w
l'r"~U" ~::
l'i''"J.: li""i)"';~" 2,: ; " .~
~~ >00
ii'.;:~.wJi:i it!, .ili "w r>

iiiil"i,': ,r"i, :':1::':,': ~~ 200 ' .(
'!:"":J:::'~ :,!
~
':il"i,:,,: : 1::'1:ii'.::1 ' : ... 1 :: 1 0. 100
0
20 100
'0 '0
CASE TEMPERATURF ITe I-·C CASE TEMPERATUREtTcl--C CASE TEMPERATURE ITel-at
Fig. 12 - DC gate·trigger current vs. case tem· Fig. 13 - DC gate·trigger voltage vs. case tem· Fig. 14 - Critical rate·of·rise of off·state vol·
perature for S2800 series. perature for all tvpes. tage vs. case temperature for S122
series.
to"'d+1r
:\90"loPOlNT
v~
o •
\..
.
o
20 .. eo
CASE TEMPERATUREITcl--C
eo 100 50 100
''''
DC GATE TRIGGER CURRENT I1GTI- mA
liC$-',oseRI
Fig. 15 - Normalized critical rate of rise of Fig. 16 - Gate-controlled turn·on time vs. gate
off-state voltage vs. case temperature trigger curren t for all tvpes.
for S2800 series.
531
SILICON CONTROLLED RECTIFIERS ...._ _ _ _ _ _ _.....;.._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
S3700, S3704, S3714 Series

Features
5-A Silicon Controlled Rectifiers • Fast tunM>fl tim0-8 '" max.
For Inverter Applications • High dl/cit and dv/clt copabil_
The RCA-S3700. 83704. and S3714-series types are all-diffused. and fluoresCent lighting. These tyPes may be used at fre- • Shortod-emltter __ cathode construction
. silican controlled rectifiers Ireverse-blocking triode thyristors) quencies up to 25 kHz. • • .contains an Internally diffused
designed for inverter applications such as ultrasonics. choppers. The 83700 and S3704 series employ a hermetic JEDEC TO-66 resistor between gate and cathode
regulated power supplies. induction heaters, cydoconverters. package. The 53714 series employs a TO·56 with heat radiator • Center gate condrUction••.•Provides
package. rapid uniform gate.current spreading for
MAXIMUM RATINGS, AbIoIur.-Mtucimum ValUfII:

NON-REPETITIVE PEAK REVERSE VOL TAGE:-
S3700B S37000 S3700M
S3704A S3704B S37D4D S3704M d700tS
S3114A 837148 83714D S3714M S3714S
heatin._
falter turn-on with substantially reduced
Gate Open •...•..•.••......•.......•......... V RSOM 160 300 500 700 800 V TERMINAL CONNECTIONS
NON-REPETITIVE PEAK OFF-8TATE VOLTAGE:-
Gate Open ........•....•.•.•.•..•...............•.. V OSOM 150 300 500 700 800 V ANODE
CATHODE I FLANGE)
REPETITIVE PEAK REVERSE VOLTAGE:-
Gate Open •..•..•..••.•..••.•.••.....•.•..•......• V RROM 100 200 400' 600 700 V
REPETITIVE PEAK OFF-sTATE VOL TAGE:-
Gate Open ........................................ . V OROM 100 200 400 600 700 V
ON-STATE CURRENT:
TC - 6flc, conduction angle "" 180°:
RMS ............................................. . IT IRM81 6 A
Average .......................................... . IT(AV) 3.2 A
For other conditions Sea Figs. 3,4
PEAK SURGE (NON·REPETITIVE) ON-STATE CURRENT:
'TSM
For one full eycle of appliad prlnapal voltagl'. TC = 600C Hcs-z77ao
60 Hz I.inusoidal) .•....••.•.•••.••.••...••.••.••.•
50 Hz (sinuloldal) ......••••..••....•....••.•...•.. .
_---80
66
A
IA BOTTOM VIEW
.N.,
JEDECTO«
For more then one full cycle of eppllad principal voltage 8ft Fig. 6
RATE OF CHANGE OF ON-STATE CURRENT CATHODE
I;\j
VD- VDROM,IGT'" 50 mA.t, = 0.1 "'. diJdt 200
FUSING CURREN't lfor SCR protection):
T J --40t0100 C,t=1 to 8.3 rns ••.•..•.•....•.•..•. ,2, 25 A
GATE POWER'DISSIPATION:-
Peak Forward Ifor 10 ". max., See Fig. 1') .•..•••••••...••• PGM 13 W
Peak RllVllrse (for 10 ". max., See Fig. 8). ••..•••••.•..•••• P RGM 13 W
Aver... (everegingtime" 10 ms max.) ..••...•.......•... PGIAVI 0 .• w
TEMPERATURE RANGE:·
Storaga .......................................... .
Operating (ca.. ) ••••••••••••••••••••••••••••••••
T,.. 40 to 150
-40 to 100
·c
·C·
f GATE
.
TC ANODE
PIN TEMPERATURE (During IOIdering): (HEAT RADIAtORI SICS· ann
At distances;> 1/32 in: 10.8 mm) from seetlng plene
for 10. max ••••.•..•••.••.••••.•••...••.•.•..... Tp 22. ·C BOTTOM VIEW
• These ValU81 do not apply if there is 8 positive gate .ignal. Gate must be open or negatively biased. JEDEC TO-H with Heat Raclator
- Any produCt of .... current and gate vohega which results in 8 gate power 'e.. thin the maximum i. permitted .
• For temperature rnIIIISUrem&nt reference point, I#IfI DI~ OudlM.
At Moximum Rod... UnI. . Dthorwi.. Specified and at I n _ c.. Tom_ ... (TCl
LIMITS
CHARACTERISTIC SYMBOL FOR ALL TYPES UNITS
Except .. SpecIfied
MIN. TYP. MAX.
Peak Off·State Current:
(Ga'e open. TC = 100· CI
Forward Current (100M) at Vo "" YOROM ....... . 0.5 .3
rnA
Reverse Current UROMla' VR = VRROM .•..... 0.3 1.5
Instantaneous On-State Voltage:
iT =30 A (peakl. T C =25·C ................ .. 2.2 3 V
For other conditions .......................•. See Fig. 6
Instantaneous Holding Current:
Gate open. TC = 2SoC .•.........•............ 20 50 rnA
Fig. 1-Power dissipation vs. average
Critical Rate of Rise of Off-State Voltage : on·state current.
VO'" VOROM, exponential voltage rise.
Gate open, TC '" aooc ....................... . dv/d, 100 250 VI",
OC Gate Trigger Current:
Vo =12 V(del. RL = JOn. Tc= 25"C ........ .. 15 40 rnA
For other conditions ..•....................•. See Fig. 7
OC Gate Trigger Voltage:
VO-12V (del. RL = JOn. Tc' 25"C ......... ..
For other conditions .................•.......•
1.8 J 3.5
See Fig. 7
V
Gate Controlled Turn-On Time:

For Vox = VOROM.IGT= 300 rnA, 'r = 0.1 ~'.
IT = 2 A (peakl. T C = 25·C (See Fig. 101 ........•. 0.7 .,
Circuit Comm.utated Turn-Off Time:
VOX· VOROM. iT= 2 A, pulse duration ~ 50",s.
dv/dt= 100 VI". -di/dt· -ION.,. IGT = 100 mAo
VGT = a V (at ,urn..,lfl. TC = 8O·C (See Fig. 131 ... Iq .s
REP£TITION RATE~PPS
S3700 series .....•. 4 6
53704 53714 series 4 8
Thermal Resistance: Fig. 2-Dissipation vs. repetition rate.
Junction·ta-Case. • . . . • . . . . . . . • • • • . . • . . . . . . . • . • R6JC 4 8 OC/W
Junction·ta-Ambient • . . • . . . • . . . . . . . . . . . . • • . • • • AS JA OC/W
40
532
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON CONTROLLED RECTIFIERS
53700, 53704, 53714 5eries
. 1 10 .. 68 100 Z 4 6 '1000
, 4
SURGECURAEN' DURATION-CYCLES
ON-STATECURREMT[Ir_]-'A
AV[RA6E ON-STATE CURRENT [ITtAVTI-A
Fig. 3-Maximum allowable case temperature Fig. 4-Maximum allowable ambien t temperature Fig. 5-Peak surge on-state current vs.
V$. on-state current. vs. average on-state current. surge-current duration.
100 SltNJEDAREAINDICATESlOC\JS
8 ~R~-!:::-~~=:=::TS ~ f'[IIMITTEOPUt.SEIID1\tS
FDltINlllCATEDPEM.
FaRIAItO GAll POIER
"r---+--r~HrHtr---+--r~
Ill'<:
11111 '\ P\
>
1t; L-IMXIIIUI GATE TRIGGER J"WLt lJ.
f"- l.- V'"
:!
1°I-VDI..TAGEFDRIIiIDICATED
:~ JUNCT~~. T~~RATIJREtTII
RESISTMCE
.... It ..1
~;JI1-
! "r- ~ofI'
ff"
I.
-- -
" I"
>
~ r--t- .... C /1' ./" r---
i,: .'~C ..... ~F AVERAGEGAT£
I
;!
·:~~IR~!oIn.
DlUlPATIOII UtlT
UIATT
IlAlaUUTETRIGGlIt
CUlIEIT FOIl INDICATED
INSTNfTANEOU$IJN.STi\TE YOlTAGE {YJ}-V

rr III" ....
f--l--f-h14++H--i.jC c t--H-It-tt
ttt----r-t-Hi"ttti----r-t-H-tttti
JUNCTION TE.ERATI.IIE IT~
11ttt---t--t-t-Tti-ttt---r-t-t-rrtffi
Fig. 6-lnstantaneous on·state current

vs. on-state voltage.
,
I
. I III III
0.001
HOIJNI'IIlL
...
. .. . .
'... VOlTTRIQGERFOR
....""'"
TJ' .UOOc
, 0.01 0.1
GATE-TO-CATHOD£CURRbfT IIGT)-A
1.0 '0
,
'00
Fig. 7-Gate-trigger characteristics and

of permissible gate-trigger pulses.
1
E6±rl±6fH+Hff~H+H±~~Ef~~fH~tIE~ ~
~
~
...
.... ....
0.2
..
0.1
REVERSE GATE CURRENT (IGRI-A
Fig. 8-Reverse-gate voltage vs. reverse-gate current.

DC GATE-TRIGGER CURRENT IIGTI-A
Fig. 9- Turn-on time VB.

,-
gate-trigger current.
533
S3701M
Features:
5-A Silicon Controlled Rectifier • High peak--current capability
• Good current-spreading attributes
For Applications in Pulse Power Supplies To Drive GoA. Laser Diodes • Symmetrical gate-cathode construction for uniform current
density. rapid electrical conduction, and" efficient
Type S3701 M is a silicon controlled rectifier intended for use cant characteristic of this device is its well controlled holding heat dissipation
in circuits which generate pulses to drive injection laser diodes. current, which assures operation only at currents sufficiently
high to meet the circuit requirements. • Controlled minimum holding current
The 53701 M seR is designed for the good current-spreading • Hermetic construction
and delay-time characteristics "necessary to provide high-peak- The 53701 M seR employs a hermetic JEDEC TO·66 package.
current pulses to drive the laser diode. An additional 5i9nlfi-
ANODE
CATHODE (FLANGE)
MAXIMUM RATINGS,Absolute·Maximum Values:

Case temperature (Tel = 25°C, unless otherwise specified
REPETITIVE PEAK OFF-STATE VOLTAGE:

~ateopen VOROM 600 V
RMS ON-STATE CURRENT {Conduction
angle = 18001 •. 'TIRMS) A
REPETITIVE PEAK ON-5TATE CURRENT
(0.2/.15 Pulse Width): 'PM 9ZCS-Z1120
Free-air cooling. f = 500 Hz .
Free-air cooling, f = 5000 Hz
7'
40
A
A
Infinite heat sink. f = 10,000 Hz .• 40 A
Infinite heat sink, f = 1.000 Hz • . . 75 A
GATE POWER DISSIPATION: BOTTOM VIEW
PEAK (For 10 /.IS pulse) . . . . ' . . . . . . . . . . • , .••. , ••• , , ••• , ... , • , • , , , • , PGM 2. W JEDECTO-66
TEMPERATURE RANGE:
Storage. . . , ,', , .• , •• ,., , . , . , . , " " " .••. , •.•...•. , .. Tstg -40. to 125°C
Operating (Casel ' . . , . • , , • , , • , • , ••.•.•. , , •..• , • , • , •••••• , • , •• TC' -40 to 100°C
TERMINAL TEMPERATURE lOuring soldering): TT
For 10 s max. herminals and case) ..• , •• , •.• ,., •. , •.• ' . , ' , . , •..• ,.,., •• ,.,.,. 2~ °c
At Maximum Ratlngslnd at Indicated caoe Temperotu'" (TC) U...... Othorwi.. Specified
CHARACTERISTIC SYMBOL~M~i-;~IMrl~~~S_X.~ UNITS
Peak Off-State Current:

Gate open, vD = VOROM. TC = 25°C. , . . . . . . . . ~ . . . . . . . . . IDROM 0.65 mA
TC' 75°C . . . . . . . . . . . . . . . . . . . 1.2
DC Gate-Trigger Current: Tc = 26°C ',' , . . . . . , . . . . . . . . . . . . , 35 mA
DC Gate:rrigger Voltage! TC = 250 C . . . ,. . . . . . . . , . . . . . , . . . . 4 v
DC Holding Current:
Gate open, TC = 250 C . . . . . . . . , , . . . . . . , . . . . . , . . . . . . . , 15
mA
TC·750C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Critical Rate-of-Rise of Off-State Voltage:
For vo = VOROM, exponential voltage rise, 91t8 open, TC = 75°C . . . . . . . dv/dt 200 VII"
Source Voltage for Functional Test (See Fig. 2):
ID ' 75A, C· 0.0221tf, R,' 20. f · 60Hz, pulse duration' 0.21", TC' 25°C v, 550 v
Thermal Resistance:
Junction-to-Case 1
Junction-to-Ambient . . . . . . . . . . . . , . . , . . . , . . . . . , .. . 40
534 __________________________________________________________________
537025, 537035F, 021015, 021035, 02103SF,

53705M.53706E.02600M, 02601E, 02601M
SCR's and Rectifiers for Horizontal- Features:
Deflection Circuts • Operation from supply voltages
For Large-Screen Color TV between 150 and 270 V (nominal)
• Ability to handle high beam current;
The RCA 5CR's 537025. 537025F. con rectifiers 021035 and 021035F are
average 1.6 rnA dc
53705M. and 53706E and the RCA reversed as compared to that of a normal
• Ability to supply as much as 5 mJ to
rectifiers 021015. 021035 021035F. power·supply rectifier diode.
8 mJ of stored energy to the deflection
02600M. 02601E. and D2601M are de-
The 53705M silicon controlled rectifier yoke. which is sufficient for 29-mm-
signed for use in horizontal output circuits.
and the 02601M si Iicon rectifier are design· neck picture tubes operated at 29 kV
The 537035F silicon controlled rectifier ed to act as a bipolar switch that controls or 31 kV (nominal value)
and the 021025F silicon rectifier are horizontal YQke current during the beam • Highly reliable circuit which can also
designed to act as a bi polar switch that trace interval. The 53706E silicon con· be used as a low-voltage power supply
controls horizontal yoke current during trolled rectifier and the 02601 E silicon TERMINAL DESIGNATIONS
the beam trace interval. The 537025 sili· rectifier act as the commutating switch to
con controlled rectifier and the 021035 initiate trace·retrace switching and control
silicon rectifier act as the commutating yoke current during retrace.
switch to in itiate trace·retrace switching The 02600M silicon rectifier may be used
and control yoke current during retrace. as a clamp to protect the circuit com·
ponents from excessively high transient
The 021015 silicon rectifier may be used voltages which may be generated as a
as a clamp to protect the circuit .. com· ~OE
result of arcing in the picture tube or in a
~E
ponents from excessively high transient
voltages which may be generated as a
result of arcing in the picture tube or in a
high-voltage rectifier tube.
The 5CR's employ a hermetic JEOEC
TO·66 package. The rectifier types 021015
'!:E"'" JEDEC 00-'
"',·"m
high-voltage rectifier tube.

021035. and 021035F ernploy a her- ~'NOOE
To facilitate direct connection across each metic JEOEC TO-l package. The rectifier
types 02600M. 02601 E. and D2601M
CArr: -1+ 0
silicon controlled rectifier. 537025 and (CASE) ~CS-2n69
JEDEC DO·26
537025F. the anode connections of sili- employ a hermetic JEOEC 00-26 package.

MAXIMUM RATINGS, Absolute-Maximum Values; S3703SF S...... S370ZS S37DBE
TAACESCA CQMMUTATINQ SCR
NON-REPETITive PEAK OFF-STATE VOLTAGE:-
800" 760" 000" V
AE:;~~~~e; PEAK REVE'ASE VOLTAGE:-' ..
V OSOM 700"
2. 2. 2. 26 V
RE~:~~~~e~ PEAK'OF'F~STATE 'v'all-AGE;-
Gale Open VOROM 7.0 600 700 600 V
ON·STATE CURRENT
T C = GOOC, 60 Hz sine wave, conduction angle = 180°:
RMS
Average DC
........... . IT(RMS)
ITtAVI
•
3.2 3.2
5
3.2
5
3.2
A
A
PEAK SURGE (NON·REPETITlVE) ON·STATE CURRENT: IT8M
For one full cycle of applied principal voltage
60 Hz (sinusoidal). T C = Sot.'C. ,
50 H:z (sinusoidal!. T C =eooe_
For one·half sine wave, 3 ms pulse width, .
RATE OF CHANGE OF ON·STATE CURRENT:
.
80
130
80
6'
160
..
80
130
80
85
150
A
A
A
REPETITION RATE- PPS
Fig. 1 - Dissipation vs. repetitIOn rate for

112CS-24,a3
S3102S and S3102SF.

AI~'
,.
Vo = VOROM,IGT" 50 rnA. t r .. 0.1 JJ.s di/dl 200
FUSING CURRENT (lor SCR protection): .... =-~=~"~i~·~~tSZs~~NG\!':cr·'c
GA;i ~~~~~o ~~~'p~~:d~:~O m$ 20 A',
l! - LOAD·RESISTIV!
REPETITIVE: P£AIC REVERSE V«.TAGE(VRROM).
Peak (forward or reversel for 10J,l.sduration. max.
"V"!~~~:~~/&l:RIfNET [I TCAVU ...AXlfotUM
negative gate bias = -35 V iS3703SF. S=l705M)
-= -10 V iS3702S. S3706EI
26
26
W
W
S \"
~j!
TEMPERATURE RANGE:" \
Storage ... ,. -4010150 ·c
Operating tCase) -40 to 10 "c \
PIN TEMPERATURE (During sold,rlng)
At distances> 1/32 in. to.8 mml from saating plane
forl0amax. Tp 226 ·c "\..
"
~
• Protection egainlt tran,ients abov' these values induced by arcing or other OIIUta1 mUlt be providad.
• Theta values do not apply if there is a positive gate sign.I, Gate mUlt be open or negatively bl.led. I .. ~ t-
. o. . ..
• Any product of gate current end gate voltage which results In e gate power less than the maximum il p'rmltttd, provlcltd that tha maximum
rever.. gate biaB (as specified) I. not 8)(ceedecl.
• For temparBture ml8Iurement referenct point, see Dimension Outline. o. o.10
0
100
0
1000
SURGECUMENT DURATION-CVCLEI
Fig. 2 - Peak surge on'stBtB curren t vs. surge

current duration for S3105M and
S3106E.
535
SILICON CONTROLLED RECTIFIERS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
537025, 53703SF, 021015, 021035, 021035F,

5370SM,53706E,02600M,02601E, D2601M
SILICON CONTROLLEO RECTIFIERS
ELECTRICAL CHARACTERi...cs, At Maximum Ratings Unless Otherwise $peci/;ed and ilt Indicated Case !emperawre (TC)
LIMITS
S3703SF &3702S
CHARACTERISTIC SYMBOL S3705M S3706E UNITS
TRACE SCR. COMMUT.SCR
TYP. MAX. TYP. MAX.
Peak Forward Off-State Current:
Gate open, Vo '" VOROM. TC = 85°C, . . . . . . . . . . . . , .. '00M 0.5 1.5 0.5 1.5 mA
Instantaneous On-State Voltage:
iT = 30 A (peak), TC = 25°C 'T 2.2 2.2 V
Critical Rate-af-Rise of Off-State Voltage:
V 0 '" VOROM. exponential voltage rise.
INlTANTANEOUlON.-ITATil. VOLTAGE Iotrl-V
Gate open, T C '" 70°C 537025 .... 700 (min.)
(dv/dt)3 Fig. 3 - Instantaneous on-state current vs.
dv/dt V!ps
S3106E . . . . . . . . . . . . . . 175 (min.) 1000 (min.) on-state voltage for 531025 and
(dv/dt)2
531035F.
DC Gate Trigger Current:

mA JUNCTION TEMPERATURE: (TJ I -ISO·C
W
Vo = 12 V (de), RL = 30n, TC = 25°C IGT 15 32 15 45 _ eo
DC Gate Trigger Voltage: we
-I
VD = 12 V (del. RL = 30n, TC = 25°C ............ VGT 1.8 1.8 V
~}50 ............
10m'
Circuit Commutated Turn-Off Time: •

TC '" 70o C, minimum negative gate bias during turn-off time =;:"'0 .......
= -20 V (S3103SF, 53105M) and -2.5 V (531025, 53106E), i!;
~! 30
......
rate of reapplied voltage (dv/dt) = 115' VI",
531035
S3105M
400 VI",
tq
2.4
2.5 "' !i ,. a•
..........
...........
. . .,. ..
~
S31025 4.. 2
53106E ..•. 4.5
0
, , "00
SURGE - CURRENT DURATION - -CYCLES
Thermal Resistance, Junction-to-Case ROJC °C/W
• This parameter, the sum of reverse recovery time and gate recovery ti~e, is measured from the zero crossing of current Fig. 4 - Peak surge (non·repetitive) forward
to the start of the reapplied voltage. Knowledge of the current, the reapplied voltage, and the case temperature is necessary current vs. surge~current duration
when measuring tq. In the worst conditions (high line, zero-beam, off-frequency, minimum auxiliary load, etc.) turn-off time for 021015,021035, and021035F.
must not faU below the given values. Turn-off time increases with temperature; therefore. case temperature must not ex~ed 70oe,
SILICON RECTIFIERS
MAXIMUM RATINGS, Absolute-Max;mum Values:
D2103SF D2tlO1M D2103S D2601E 021015 D2600M JUNCTION fEWERATURE: (TJ ) -,&D·c
TRACE COMMUTATING CLAMP
W,.
~I
••
~HI)
REVERSE VOLTAGE:--
'00 '00 ~}50
.
Repetitive Peak . . . . . • . . . . . . . . V RRM "0 600 .00 600
Non-Repetitive Peak- ... V RSM 800 '00 BOO 600 800 '00
FORWARD CURRENT (operating in 15 kHz =;:
, 40 t-;-t;t
deflection circuit!:
RMS ... " . . . . . . . . , . . . . . . . . . . . . . . . IF(RMS) 3" 1.9·· 3" 1.6·· ,., 0.5--
~W
~§ 30
IOml (SO HI)
Peak Surge (Non-Repetitive)··

Peak (Repetillve).
, , .. I FSM
.. ,IFRM 70·· •..
,0+. ,0"
12 70··
6
30+·
0.'
30"
0.' 1~20 ~ ::::::-......
r-.:::
TE.MPERATURE RANGE
Storage .Tstg -3010150 °e
it ~'"
LE~6~~t~~~~~~:U'R'E (D~;ing S~ld~;ingj:ll'
For 10 s maximum
.. ,TC
. . . . . TL
-30 10 80
'225 - - - - - - -
°c
°c • , , . .,.
SUReE - CURRENT DURATION - -CYCLES
'O"~_I--
2 4 II 8 100
-- For ambient temperatures up to 45°C .

. . For a maximum of 3 pulses, each less than 10P.sduration, during any 64 ·J.l.5 period. Fig. 5 - Peak·surge (non·repetitive) forward
•• Maximum current rating applies only if the rectifier is properly mounted to maintain junction temperature below 150°C.
. . See Figs. 4 & 5 for IFSM value for 60 Hz.
current vs. surge~cu"ent duration for
. . At distances no closer 10 rectifIer body than points A and B on outline drawing. 02600M, 02601E, and 02601M.
JUNCTlON TEMPERATURE (TJI-2'·C /00 PEAK FORWARD CURRENTIIFM'-IOA r---

RECTANGULI!-R-PULSE DURATION(lpl_30",,1 r---
~ ~ JILl IIII
~
; 1,'I---+-H+t-+-H+t--t-./:71'':;;t''ti I /0
I II I 1111
II
~!' I---+-H+H+ D210,!1S~l'";"--"'-+--+-++i
/. ==7
~l ;- t¥~lc.~I~~.JEM~ATURE ,
~ i
1---+-HI+H-t"':;:....~~DZI03S - I~
m..!.,
...;.f-"+-+ 02103SF
I---+-Hf-t........ -
~
~
...
~ ~.II
0.'
0.01
v
, .. 0.'
INSTANTANEOUS FORWARD CURRENT (IFI-A
, .. '0
O. I Z 4 II '0.1
INSTANTANEOUS FORWARD CURRENT ('FI-A
Ql
•.1
I U
10 100
RATE OF DESCENT OF FORWARD CURRENT(wdl,/dU-A/,IoI'
Fig. 6 - Forward·voltage drop vs. forward Fig. 1- Forward-voltage drop vs. forward Fig. 8 - Typical peak reverse·recovery current
current for 021015, 021035, and current for 0260OM, 02601E, and vs. rate of descent of forward current
021035F. 0260 1M. for all rectifiers.
536 ______________________________________________________________
S3702S, S3703SF, 02101S, 02103S, 02103SF,

S3705M,S3706E,02600M, 02601E, 02601M
SILICON RECTIFIERS
LIMITS
021035F 021015
TRACE
02601M 026DOM
CHARACTER ISTIC SYMBOL UNITS
~~~~~ COMMUT, CLAMP
MAXIMUM MINIMUM
Reverse Current:
Static
For VRRM '" max. rated value, IF = 0, TC "" 25°C. 10 10 ~A
For VA '" 500 V, TC = 100oe ...... . 250 250 01 10 100
RATE OF DESCENT OF FORWARD CURRENT !-diF/dtl-A/P.'
Instantaneous Forward Voltage Drop:
At iF = 4 A, TA = 25°C (See Fig. 6, 7) 1.4 (D21035F, 1.5 (D210151
0210351
'F V Fig. 9 - Typical peak reverse·recovery cur·
1.9 (D2601M, 2 (D2600MI
rent VS. rate of descent of forward~
D2601EI
current for all rectifiers.
Reverse Recovery Time:
At IFM =,3.14 A. -diF/dt = -10 NilS.
~=
10 RECTMGUL.AR-PUL.SE DURATlON!lplo,O ILl
pulse duration = 0.94 f./.S, TC '" 25°C 0.5 (D21035F, 0.7 (D210151 JUNCTION TEMPERATURE !T J lol~O°C
0210351
At IFM = 20 A. -diF/dt '" -20 Alps,
I III l.
pulse duration = 2.8 IlS, TC = 25°C 0.5 (D2601M,
D2601EI
0.7 (02600MI
lAS
I.
~ ~
I IIII <,'11*
'dI.!i'~
In Tektronix type "5" plug-in unit (or equivalent): ~ § ~ IA
.~ _f-
At IF = 20 rnA, 'A '" 1 rnA, TC::: 25°C
Peak Forward Voltage Drop (at turn·on):
1.5
P
w 1001
~V
0.1
In Tektronic type "S" plug-in unit (or equivalent): I -
At IF '" 20 rnA. TC = 25°C 6 V ~..l
Thermal Resistance (Junction·ta-Case)"" .. , 10 (D21035F, 10 (0210151
0210351 00
°C/W OJ I 10 100
Thermal Resistance (Junction-to· Lead)" (See Fig. 11) 45 (02601M, 45 (02600MI RATE Of DESCENT Of FORWARD CURRENTI·dlF/dt}- A/fL'
D2601EI
... Measured at point as indicated on Dimensional Outline. Fig. 10 - Typical reverse-recovered charge vs .
• Measured on anode lead 1/8 in. (3.1B mm) from case.
rate of descent of forward current
for all rectifiers.
0.125
010203040506070
THERMAL. RESISTANCE, JUNCTION-TO- L.EAO IRBJL.l.-"C/W
Fig. 11 - Junction·to·lead thermal resistance

vs. lead length for 02600M, 02001 E,
and 0260 1M.
537
SILICON CONTROLLED RECTIFIERS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
S3900, S3901, S3902DF, S3903MF Series

1978 RCA Power Devices

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What precautions should be taken when soldering transistors and thyristors?

What precautions should be taken when soldering transistors and thyristors?

What are some guidelines for handling and mounting plastic power transistors and thyristors?

What are some guidelines for handling and mounting plastic power transistors and thyristors?

RCA

Copyright 1978 by RCA Corporation

BR ; Bridge rectifier PH =Power hybrid circuit RF ; R F power transistor

RCP115B 250 50 m.in. 0.025 10 6.25 0.150 BO - - TO·202AB -

IC (Max.) = 2_5 to 5A, fT = 0_2 to 2 MHz

2N6671 300 10 6 3 160 8 15 0.8 TO·204MA .,.

~heck availability In Europe, the Middle East, and Africa. .t

IC = 6 to 10 A, fT = 2.5 to 25 MHz (cont'd)

IC= -0_15 to -1 A, fT= 0.2 to 1 MHz

IC = -2_5 to -5 A, fT = 2_5 to 25 MHz (cont'd)

tcheck availability In Europe, the Middle East, and Africa •

________________________ ~ ____________ ~ ___________________ 15

*ELECTRICALLY ISOLATED FROM INTERNAL CIRCUITRY,

HC2000H* - Applications HC2500 - Applieations

Ratings and Features for HC2000H* and HC250Q

SUPPLY VOLTAGE: Bandwidth: 30 kHz at 60 W

HC2500 0.06% NO CLASS AB CAPACITOR ON NO

Socket for both types: RCA part DG-293A, or

* HC2000H also available to MIL-spec as HC2000H/1, 2,3,4.

Collector Efficiency = 35%

RCA TO-205MA/TO-5 Mod. TO-205MA/TO-5 With TO-202AB

~"5 200 T2306B T2316B

T2706B T4706B T2716B T2506B T2806B T2856B

20 ______ ________________ __________________________________________

RCA TO-220AB Press-Fit

. , - mode only "4 V for 111+ mode -so mA for 1- mode

IR(RM5) 7A 3.3A 7A BA lOA 12 16 12.5 20A 35A

ITR Product Matrix

Rectifier Product Matrix

RCA DO-203AA! DO-203AB/

RCA DO-203AA! DO-203AB!

.Check availability in Europe, the Middle East, and Africa.

D44C4 TO-220 2N6290 TO-220 TO-220 2N6109 TO-220

GENERAL CONSIDERATIONS TRANSISTORS AND THYRISTORS

*This Note is included in the Appendix to this DATABOOK.

2N'697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

• COLLECTOR·TO·BASE VOLTAGE. VCBO 60 120 120 75 120 60 120 60 80 V

· With base open

* 2N-Series types in accordance with JEDEC registration data

...t CQLLECTOR-TO-EMITTER VOLTAGE !VCE1*IOY

40• P' j..-

2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102 ,2N2270,

TEST CONDITIONS LIMITS

*2N·Series types in accordance with JEDEC registration data

2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

TEST CONDITIONS LIMITS

2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

Fig. 7 - Typical transfer characteristics

2 4 6 B 10 2 4 6 8 100 2 4 6 81000 BASE-TO-EMITTER VOLTAGE:IVSEI- v NCS_ln~1

COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V

Fig. 9· Typical input characteristics for

2N697, 2N~99, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

~ ...... fo- e- ~.,.

~!I I'~ ilL

COLLECTOR-le-EMITTER VOLTS (VCE '

2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270,

______ ~ ~ _ 15

20 ________________________________