Eec403: Microwave Engineering
Eec403: Microwave Engineering
Eec403: Microwave Engineering
Module I
Transferred Electron Devices: Introduction, GUNN effect diodes (GaAs diode), GUNN diode principle
of operation (RWH theory), modes of operation, LSA diodes, microwave generation and
amplification.
Module II
Avalanche Transit Time Devices: Introduction, read diode, IMPATT Diodes: Physical structures,
negative resistance, power output and efficiency, TRAPATT diodes: Physical structures, principles of
operation, power output and efficiency, parametric devices: Physical structure, nonlinear reactance
and Manley-rowe power relations, parametric amplifiers, and applications.
Module III
Microwave Linear Beam Tubes: Conventional vacuum triodes, tetrodes and pentodes, high
frequency limitations of conventional tubes. Klystrons: Reentrant cavities, velocity modulation
process, bunching process, output power and beam loading, Reflex Klystron: Velocity modulation,
power output and efficiency, electronic admittance.
Module IV
Helix Travelling Wave guides: Slow wave structures, amplification process, convection current, axial
electric field, wave modes, gain considerations. Microwave Crossed-Field Tubes: Magnetron
oscillators types, principle of operation of cylindrical magnetron, equations of electron motion,
cyclotron angular frequency, pi-mode separation.
Module V
Text Book(s)
1. Samuel Y. Liao, Microwave Devices and Circuits, 3/e, Prentice Hall of India, 2003.
References
1. Gottapu Sasibhushana Rao, Microwave and Radar Engineering, 1/e, Pearson Education, 2014.
2. R.E. Collins, Foundations of Microwave Engineering, 1/e, Tata McGraw Hill, 2007.
3. Michael Steer, Microwave and RF Design: A Systems Approach, 1/e, YesDee, 2012.
4. Inder Bahl, Prakash Bhartia, Microwave Solid State Circuit Design, 2/e, Wiley, 2011.