Electronic Circuit Analysis
Electronic Circuit Analysis
Subject with Code : Electronic Circuit Analysis (16EC407) Course & Branch: B.Tech - ECE
Year & Sem: II-B.Tech & II-Sem Regulation: R16
UNIT –I
SMALL SIGNAL LOW FREQUENCY TRANSISTOR AMPLIFIER ANALYSIS
1. a) Why hybrid model is used for the analysis of BJT amplifier at low frequencies? Draw the
hybrid model for CE transistor and derive the parameters. [6M]
b) Compare the CE, CB and CC transistor amplifier parameters. [6M]
2. Using low frequency h-parameter model, derive the expressions for voltage gain, current gain,
input impedance and output admittance for a BJT Amplifier in CE configuration. [12M]
3. a) With neat diagram, derive the CE amplifier parameters using approximate analysis. [6M]
b) Obtain the expressions for current gain, voltage gain, input impedance and output impedance
of CB amplifier using simplified hybrid model. [6M]
4. a) Determine the parameters Ai, Ri, Av and R0 of Emitter Follower using simplified hybrid model
analysis. [6M]
b) A voltage source of internal resistance Rs = 900Ω drives a CC amplifier using load resistance
RL=2000Ω. The CE h parameters are hfe=60, hie=1200Ω, hoe = 25µA/V and hre = 2 x 10-4.
Compute Ai, Ri, Av and R0 using approximate analysis. [6M]
5. A CE amplifier is driven by a voltage source of internal resistance Rs = 800Ω and the load
impedance of RL=1000Ω. The h-parameters are hie=1k, hfe=50, hoe = 25µA/V and hre = 2 x 10-4.
Calculate current gain, voltage gain, input impedance and output impedance using exact
analysis and approximate analysis. [12M]
6. Consider a single stage CE amplifier with Rs = 1kΩ, R1 = 50kΩ, R2 = 2kΩ, Rc = 1kΩ, RL =
1.2kΩ, hfe=50, hie=1.1k, hoe = 25µA/V and hre = 2.5 x 10-4, as shown in Fig. Find Ai, Ri, Av, Avs,
AIS and R0. [12M]
7. a) Obtain the expression for current gain, voltage gain, input impedance and output impedance
For Common Emitter Amplifier with Emitter Resistor. [6M]
b) A CE amplifier is driven by a voltage source of internal resistance Rs = 1000Ω and the
load impedance of RC=2kΩ. The h-parameters are hie=1.3k, hfe=55, hoe = 22µA/V and
hre = 2 x10-4. Neglecting biasing resistors, compute current gain, voltage gain, input
impedance, output impedance for the value of Emitter Resistor RE = 200Ω inserted in the
emitter circuit. [6M]
8. a) Draw the circuit diagram of a single stage RC coupled Amplifier and discuss the steps used
for designing it. [6M]
b) Determine Voltage Gain, Current Gain, Input resistance and Output resistance for a CE
amplifier using NPN transistor with hie = 1200Ω, hre = 0, hfe = 36 and hoe = 2 x 10-6 mhos,
RL = 2.5kΩ and RS = 500Ω (neglect the effect of biasing circuit). [6M]
9. Design a single stage RC coupled BJT amplifier for the following values. Assume that for
Silicon transistor, Vcc = 10V, Ic = 4mA, hfe = 100, hie = 1kΩ, RL = 100kΩ and fL = 100Hz. [12M]
10. a) Draw the circuit diagram of JFET Common Source amplifier with voltage divider bias for
bypassed Rs and determine the expression for input impedance, output impedance and
voltage gain. [6M]
b) Derive input impedance, output impedance and voltage gain of JFET Common Drain
amplifier with neat diagram. [6M]
UNIT –II
SMALL SIGNAL HIGH FREQUENCY TRANSISTOR AMPLIFIER ANALYSIS
1. a) Draw the Hybrid-pi model and explain the significance of each and every component in it. [6M]
b) Derive the expression for Hybrid- π capacitance of CE transistor at high frequency. [6M]
2. Derive the expressions for the hybrid π parameters gm, gb’e, gb’c, rbb’ and gce. [12M]
3. a) Mention the typical values of Hybrid- π parameters. [6M]
b) A BJT gm = 38mƱ, rb’e = 5.9kΩ, hie = 6kΩ, rbb’ = 100Ω, Cb’c = 12pF, Cb’e = 63pF and hfe =
224 at 1 kHz. Calculate fα, fβ and fT cutoff frequencies. [6M]
4. With the help of necessary circuit diagrams and approximations obtain the expression for CE
Short circuit current gain and derive the relation between fβ and fT. [12M]
5. a) Discuss the dependency of hybrid-pi parameters upon collector current, VCE and Temperature. [6M]
b) A BJT has the following parameters measured at Ic=1mA, hie=3kΩ, hfe=100, Cc=2pF
and Ce=18pF. Find gm, rb’e, and rbb’ for RL=1 KΩ. [6M]
6. a) At Ic = 1mA and VCE=10V, a certain transistor data shows Cc = Cb’c = 3pF, hfe = 200 and
wT = -500 M rad/sec. Calculate gm, rb’e, Ce = Cb’e and wβ. [10M]
b) Define Unity Gain Frequency fT. [2M]
7. Obtain the expression for Current gain with load resistor and explain the variation of frequency
Response with RL. [12M]
8. a) Short circuit CE current gain of a transistor is 25 at a frequency of 2MHz. If fβ = 200KHz
Calculate (i) fT (ii) hfe (iii) Find |Ai| at frequency of 10MHz and 100MHz. [6M]
b) Derive the expression for cut off frequencies fα, fβ and fT. [6M]
9. a) Describe the relationship between low frequency h-parameters and high frequency
Parameters. [8M]
b) Write about Collector junction capacitance and Emitter junction capacitance of
hybrid-pi model. [4M]
10. A transistor has hie = 6kΩ and hfe = 224 at IC = 1mA, with fT = 80MHz and Cb’c = 12pF.
Determine gm, rb’e, rbb’ and Cb’e at room temperature. [12M]
UNIT –III
MULTISTAGE AMPLIFIERS
10. For the circuit shown in Fig. Calculate Ri, Ai, AV and Ro. hie=1.1k, hfe=50, hoe = 25µA/V and
hre = 2.5 x 10-4. [12M]
UNIT –IV
FEEDBACK AMPLIFIERS AND OSCILLATORS
7. a) Derive the expression for frequency of oscillations for RC phase shift Oscillator. [6M]
b) Discuss the working principle of Wein bridge oscillator and derive the expression for
frequency of oscillations. [6M]
8. a) With neat diagram, explain Hartley Oscillator and derive the expression for frequency of
oscillation. [6M]
b) Discuss Colpitts Oscillator and obtain the expression for frequency of oscillation. [6M]
9. a) Give the general analysis of an LC Oscillator. [6M]
b) Draw the equivalent circuit of a Quartz Crystal and explain its principle of operation with the
help of neat circuit diagram. [6M]
10. a) Explain the concept of stability of Oscillators. [6M]
b) In the Hartley oscillator, L2 = 0.4mH and C = 0.004 µF. If the frequency of the oscillator is
120 kHz, find the value of L1. Neglect the mutual inductance. [6M]
UNIT V
POWER AMPLIFIERS & TUNED AMPLIFIERS
1. a) With neat diagram explain Series fed, Directly coupled Class A Power Amplifier and derive
its maximum efficiency. [6M]
b) A series fed Class A amplifier shown if the Fig, operates from dc source and applied
sinusoidal input signal generates peak base current 9mA. Calculate : (i) Quiescent current
ICQ, (ii) Quiescent voltage VCEQ, (iii) DC input power PDC, (iv) AC output power PAC and
(v) Efficiency. [6M]
2. a) Discuss with diagram, Transformer coupled Class A Power Amplifier and derive its
Maximum efficiency. [6M]
b) Explain second harmonic distortion by three point method. [6M]
3. a) Describe Higher order harmonic distortion by five point method. [6M]
b) With neat diagram explain Push Pull Class B Power Amplifier and derive its maximum
efficiency. [6M]
4. a) Describe Complementary Symmetry Class B Power Amplifier with diagram and write about
crossover distortion in class B power amplifiers. [6M]
b) A class B push pull amplifier supplies power to a resistive load of 12Ω. The output
transformer has a turns ratio of 3:1 and efficiency of 78.5%. Obtain (i) Maximum power
output, (ii) maximum power dissipation in each transistor and (iii) Maximum base and
collector current. For each transistor, assume hfe = 25 and VCC = 20V. [6M]
5. a) Write notes on Class AB operation. [6M]
b) Discuss the need of Heat sink for power transistors. Mention about thermal stability of power
transistors. [6M]
6. a) Compare Single Tuned and Double Tuned Amplifier. [2M]
b) Describe the operation of a single tuned capacitive coupled amplifier with diagram and
derive the expression for its centre frequency, Quality factor, Voltage gain and bandwidth. [12M]
7. Discuss Double Tuned Amplifier with neat diagram and derive the expression for its
bandwidth. [12M]
8. a) Explain the effect of cascading single tuned amplifiers on bandwidth. [6M]
b) The bandwidth of single tuned amplifier is 20kHz. Calculate the bandwidth if such three
stages are cascaded. Also calculate the bandwidth for four stages. [6M]
9. a) With circuit diagram, explain the stagger tuning operation. Give necessary graph. [6M]
b) Explain the stability considerations of a tuned amplifier. [6M]
10. a) A single tuned RF amplifier uses a transistor with an output resistance of 50 KΩ, output
capacitance of 15 pF and internal resistance of next stage is 20 kΩ. The tuned circuit consists
of 47 pF capacitance in parallel with series combination of 1µH inductance and 2Ω resistance.
Calculate resonant frequency, effective quality factor and bandwidth of the circuit. [6M]
b) Explain the advantages, disadvantages and applications of Tuned Amplifiers. [6M]
Prepared by:
1. Dr. P.RATNA KAMALA
Professor/ECE
2. Mr M. AFSAR ALI
Professor/ECE